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3806×10-23 Fabrication ①
g.
=
1.602×10-19 c -
photoresist res .
limit RRZKX due to diffraction
K -1=0.026 eV at Sook le
-
1 i photoresist
↳ low 1) Large Aperture
oxidation High Quai
!
lens
-
z
2×106 GaAs
.
"" ✓ ✓
Ni TeV 1.602×10 J ( isotropic ) phase shift mask
-
= -
lithography ftp.I-phofomashwetetch
-
2181582
Donor pass ! :p:p
drgie.IT#aniso+.pie ,
MIDTERM
Acc BGA In Al .in?tntioa+:iy
LE 34 I
.
5
Annealer T i⇐--
Diffuse Doping pos resist resist plasma reactive ion
.
neg .
,
|ModeHin# concentration
Band Effective Mass #
• Ec -
m -
% !
-
Kote
n
F=qE=m*daIt intrinsic
,
n -
n=p= ni n
equilibrium np
-
-
,
p
-
Ei . . .
. . . -
Ea
d Es 12h
( ;=jNcNT
-
- n e ,
O
Ev
'
Ef
n -
type donor p
-
type acceptor
-
Ea -
-
Ea
Doping
-
(
I
#oEa -
missing valence
↳ Eu Item Eu
temp dependent -
" " l l
" 1
11
00 O O O O o
orbital
l
=p
+ Ndt -
f- CE )
↳
Na
hip
'
=/
111 Acceptor
-
I
,/fNozN 2+n ;
a
Dopant n
p
n=NpgNa_ +
NasNd/÷N#
-
p ⇐
f- ( E )
N -
type Nd > Na Nd -
Na nn
Eg
p type
NAjNDt#)+n
-
p :
Densityofstates #
a
Et
] 9cL E)
testates [ trans
) )
grit
=
GCE
-
-
it 243
f (E) = #
Equilibrium dist .
ofe.carrierEY.si/#eE-EHkT
#
-
S Boltzmann's approx z
g
-
n (E) get E) f- ( E ) I
( Ec -
EHIKT E
=
-
n > No e
f- CED
( Ef Emmet o÷
E) ( I
- -
gv(
µ
PCE ) S Nr
-
p
= :
-
e
-
intr -
Eet E
hole .
' " -
E
Nc
-
g-
=
ni e
t.it/kTlgintr .
( Ei EVVKT
Nv §
-
=
e
ni
#
\ n
-
Locations of Ei
,
Ef I
Nc zf2tmn* )
"
Is
#
.
{ Gen
Ei
-
-
Ect + { kTln( FT ) % §
Nr -
- 21 't 'T a-
Ein KT th ( MP%Mn* )
E÷Ev
t
.
1a
no , > pass n; NASSND > Shi
Ef -
Ei =
kTln( F.) =
-
ht Intf ;
)
-
-
kTln( IT ) = -
KT th ( II )
⑧
(
Action I Drift Jisrift -
- IIA
Mn Mp
① Drift Ifield :jI¥
external
n
an second
Drift velocity Vd
-
- ME Mn
, Mp mgbgilait.ympeae.gg#iaegq.?p;;gI.D/I' ' P'
-
91311¥
Idriftin
-
- -
9nVdA l ID -
-
Ion '
-
Iap
,
② Bond
Bending
Jdrift , p
=
qpvd d- drift
,n
=
-
qnvd
q V ( )
( Ef t.it/kT ) ME )
P E Ec Moin n;
( Vd
--
-
=
exp
-
-
Jdrift
= -
Jdrift
,p=tqpMpE ,n=tqnMpE
.
Poop
-
-
E- Ig
-
=
dad
-
=
JD rift ( qnllntqpllp ) E E
f
, DX E Ei total =
Jdriftpt Jdriftn = = o
¥€
,
€
-
hole -
"
↳ Eff Es const eguil G= (
qnllntqpdrp ) =
q ( hunt
pmp )
x x X
o
-
-
conductivity , f- resistivity , f- to
[ ]
\ e.
E=-dI#€
m
③ Diffusion .to?banhdPhot#igtGaAsGWEV
-
and
heat #
Ft 't
T
%x= Direct
qDndFx : '¥oI#ia
-
Jn diffusion = where
,
enrewmnonegui
t.nairatn.si#etviiiT=notnp=Potsp,dp..sn/QsunasI-sp i. nEpEi@n.E n
n Ei )/hT Fai Eitktln ( Tn )
em niexplfn
'
quasi
- -
-
Dig
-
-
daff sq
=
=
day =
P
'
-
ni exp ( Ei -
Fn )/kT
No carriers -
¥¥ff¥
*÷÷ : acceptor
1015
-
' 5 '
Na 70
/
-
new =
7016 3
p cm
/
=
h Nd
-
=
new i
cm
? 101012
105 Y (
-
np
n - n =
cm
nil
=
104 Y
-
-
=
=
cm
np E
-
p
-
" "
Nd 3×10 Na 6410 Na > ND
type
?
-
p
-
3
n = Nd -
Na = 3×1016 cm
-
-3
p -
-
( 4×1010-12 = 3.33×103 cm
3×1016
I f- ( Ev )
Item
f- ( Ec )
f- ( E)
= -
Proof of Ef at intrinsic =
given
,
l l
= I
=
#
Ev-Ef)kt
-
-
y +
y t
Ec tf
# I
Ef-Eg
-
(
= -
-
(
-
y t eke
-
EHIKT y t eef
-
ENKE h
KIT KIT
tf Ect
=
f
"
! 2
catch ND : 10
n= Np . you p
-
-
Fi #
,
Pkn of f. 602×10 19111016cm 1248cm 't )
-
,
can = -
s .
to
,
1-0%8
'd
p =
1/0 =
" "
Em
= 0.500176 d.
qlnilntptlp ) /
since
n=pzn ; - lo
:
- : -
use
-
3.95×105 d.
f =
cm
VK )
Nan .
2×1015 Nd - Ixion P
type holes
E
↳
\ Nat Npa
Mp 475
3×1015
Mn boo
I
Pot Na
↳
-
NND
ni
--¥×
'
Diffusion const Dp if Mp
> 410
Si doped B IO ? pausing
SI units
Cozi
At equilibrium Po
-
Na = 1015cal evunits
using
-
o ozfeu
( 410 )
.
10.66cm 't
-
- -
no : npi÷ =
= 105lb , le
"
70 '
4cm
Syd
=
pot Ap = t = cm ee ,
105 t 1015=1015 -3
1015cm - 3
n not An = cm ( f ,
Ap
-
= cc ,
€
|""|