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THEWORLD OF REGULATIONS
Increasingly, the livelihoods of those who design and man-
ufacture GaAs ICs are moving away from reliance on Depart-
ment of Defense dollars and toward dependence on Federal
Communications Commission decisions. The “Wireless Rev- Oxygen Band 0 ;sTransmti
olution” our industry is presently experiencing had its roots in Figure 1. International Regulatory Status of Oxygen Absorption Band
decisions made years ago by the FCC and its counterpart
agencies in other countries. Cellular phones and PCS are the
The U.S. Federal Communications Commission is taking
two highest-profile examples of FCC spectrum allocations,
the lead in two areas: auctioning spectrum for licensed use to
and in the latter case, the communications industry was
bidding consortia, and giving spectrum away free to the gen-
charged billions of dollars at Federal auction for the privilege
eral public. In the U.S., this general unlicensed spectrum
of obtaining licenses to operate.
comes with few rules to hamper innovation (or to protect
Normally, the communications industry takes the lead in
against interference). In the U.S., unlike in Europe and Japan,
requesting spectrum policy. But in the case of millimeter
general unlicensed spectrum such as the 59-64 GHz band is
waves, it was requests by manufacturers - the auto equipment
not earmarked for officially-approved applications only.
industry in the case of vehicular radar, and the computer
1. See: FCC Report & Order 95-499. Available on-line from: ftp:// 2. Between 56 and 64 GHz, atmospheric oxygen attenuates electromagnetic
ftp.fcc.gov./publsurauslEngineerin~Technology/Orders[select
fcc95499.txt (text) or fcc95499.w~(Wordperfect)]. waves by as little as 7 dB and as much as 15 dB per kilometer at sea level.
100-200
t InGaAs HEMT
InGaAdAlInAs
n 111-V Fet Evolution
1970s 1990s -
I
-
Early 1990s
GaAs pHEMT
50-100
10m lOOm lkm 10 km
Distance fT
Figure 2. Propagation of 60 GHz Signals in the Atmosphere
[GHzI
20-50
Perhaps the most frequently-mentioned application for such
range-limited waves is indoor Wireless LANs. However, 10-20
short-range outdoor applications are possible as well. The fact
that no license is required, coupled with the complete absence
of constraint on what the applications must be, suggests that 0:1 0.‘25 0:s 1 .b
users, rather than central planners, will determine the applica- Gate Length (ym)
tions for 60 GHz radios. Figure 3 Today’s E T technology IS 10 times faster than in the 1970s
Millimeter Wave MMIC s are now pracucal
A perennial problem for radio has been the huge differential
Modern FETs achieve their high bandwidth by a combination
between gigabit-per-second optical fiber data rates and the
of short gatelength and InGaAs channels (more Indium gives
kilobits- to megabits-per-second rates possible with wireless.
greater bandwidth). Designers today can choose between
This “data rate gap” might be breachable in the 5 GHz of
“low-noise’’ processes (those using 53% Indium InGaAs
spectrum allocated at 59-64 GHz. Since bandwidth is not
channels, grown on either InP or GaAs substrates), and
severely restricted, simple 2-level modulations like BPSK or
“power” processes (those with 22% Indium InGaAs channels,
FSK could be employed initially, with relatively simple hard-
grown on GaAs substrates). The “low-noise” processes fea-
ware. More complex modulations, such as Orthogonal Fre-
ture FETs with fT >150 GHz, noise figures <I dB at 60 GHz,
~~ ~~ ~
4 - GaAs IC Symposium
[2]. The “power” processes yield FETs with fT =75 GHz, well accommodate millimeter wave components along with
operate with drain biases of 3-5 V, and deliver >lo0 mW of I.F. and baseband circuits [6]. That leaves the problem of
power at 60 GHz [3]. coupling signals to and from the millimeter-wave modules.
Fortunately, the outlook is bright here as well: miniature
FCC rules allow 10 Watts of EIRP in the 59-64 GHz antennas - either on-chip or off-chip - will allow for direct
band. This means that a 10 mW transmitter (which is possible coupling to free space, thereby making expensive millimeter
with a “low noise” process) working with a 30 dB gain wave connectors unnecessary. Simple antennas are short
antenna, would operate at the legal power limit. Likewise, a enough to become part of a MMIC chip, and radiation to and
100 mW transmitter (which would require a “power” pro- from MMPC chips can be handled inexpensively and com-
cess), would transmit at the legal power limit with a 20 dB pactly. Furthermore, directional antennas for this band are
gain antenna. practical in size: radiating apertures of approximately 1 inch
Though, it seems that the basic device technology is at hand diameter can accomodate a 20 dB gain antenna at 60 GHz [7].
for building practical applications in the 59-64 GHz band, the Combining MMIC chips and radiating structures into a low
question remains: “can sufficient circuit complexity be cost package seems a real possibility - one which promises to
achieved at a low enough cost?’ GaAs FETs can now be open the door to commercial applications in the 59-64 GHz
monolithically integrated using coplanar waveguide intercon- band.
nects to produce 59-64 GHz MMICs of medium complexity,
such as the divide-by-four prescaler shown below [4]: CONCLUSION
Recent FCC decisions allow commercial use of the 59-64
GHz band today, without license, and with no restrictions
placed on the type of applications. Propagation distances in
this band are short, so long-range communication is not pos-
sible, but neither is long-range interference a problem.
Today’s MMIC technology seems well suited to the challenge
of producing low-cost RF modules for the 59-64 GHz band,
and miniature antennas offer low-cost connections to free
space. After years of exile in the world of gold-plated hard-
ware, millimeter waves at last seem poised to flourish in com-
mercial and consumer applications.
REFERENCES
[I] Skellem, D., et al., “A “-Wave High Speed Wireless LAN for Mobile
Figure 4. This HEMT MMIC, designed by HP and fabricated by Hughes Computing - Architecture and Prototype ModemlCodec Implementation,”
Research is reported elsewhere in this digest. The 1.7 x 1.1 mm chip is IEEE Hot Interconnects 96 Symposium Digest, August, 1996.
typical of state-of-the-art MMICs with coplanar interconnects. This circuit
is a divide-by-4 prescaler usable in the 59-64 GHz band. [2] Nguyen, L. et al., “Ultra-High-speed Modulation-Doped Field-Effect
[Photo courtesy of Chris J. Madden, HP Laboratories].
Transistors: A Tutorial Review,” Proc. IEEE, April, 1992, pp. 494-518.
This MMIC, realized with a “low noise” process, contains [3] Sharma, A., et al., “Millimeter-Wave High Power Amplifiers Using
10 FETs, with total gate periphery in excess of 750pm, thin- Pseudomorphic HEMTs,” 1994 IEEE MTT-S Conference Digest, pp. 813-
816.
film capacitors and epi resistors. The absence of backside vias
promises lower manufacturing cost for this type of MMIC, [4] Madden, C., et al., “A Novel 75 GHz InP HEMT Dynamic Divider,”
but e-beam gate lithography used for gate fabrication will 1996 GaAs IC Symposium Digest [in this volume].
somewhat offset this cost savings. Nonetheless, we should be [SI Krems, T., et al., “Millimeter-Wave Performance of Chip Interconnec-
able to expect MMICs for 59-64 GHz applications which cost tions Using Wire Bonding and Flip Chip,” International Microwave Sympo-
less than $10 per square millimeter. Therefore, the challenge sium Digest, 1996, vol. 1, pp. 247-250.
for designers has now become: “How do we get a 60 GHz [6] Cooper, P., et al., “Multichip-on-Flex Plastic Encapsulated MHDI-Low
radio onto a single chip?’ Time will tell. Cost Substrateless Manufacturing For Microwave and Millimeterwave Mod-
ules,” International Microwave Symposium Digest, 1996, vol. 1, pp. 219-
But MMICs are only part of the story. Low-cost assemblies 222.
are needed. How can these circuits be packaged cheaply [7] Rutledge, D., et al., “Chapter 1: Integrated-Circuit Antennas,” in Infrared
enough to make wireless applications affordable? Coplanar andMillimeter Waves, vol. 10, Academic Press, 1983.
wirebond interconnects between chips are surprisingly low-
loss at 60 GHz [ 5 ] , and multichip module technologies could
GaAs IC Symposium 5 -