DJM5103 : POWER ELECTRONIC

Power Thyristor

Norehan Misran
Politeknik Ibrahim Sultan 1
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
Introduction :

 Block diagram shown the system employing a thyristorised power controler.

 Using in old/conventional controllers including magnetic amplifiers, mercury arc
rectifiers, ignitions, rotating amplifiers, resistance controllers etc.
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
Introduction :

a)Thyristor is a semiconductor devices, 4 layer pnpn & 3 pn-junction.

b)These devices have 3 terminals : Anode, Cathode & gate.
c)Usually used as a switch / bistable, operating between non-conduction state to the
conduction.
d)Phase controlled rectifier, AC voltage controller, Regulated power supplies,
Choppers, Inverters, Heaters, Lighting and Motor Control.
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
Symbol & Construction :
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
Operation : ig
ia
vs

+
vs
_ wt

vo

Thyristor cannot be turned off by applying

negative gate current. It can only be turned off if
Ia goes negative (reverse). wt

This happens when negative portion of the of

sine-wave occurs (natural commutation),
ig
Another method of turning off is known as
“forced commutation”,
The anode current is “diverted” to another a wt
circuitry.
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
IV Characteristic :
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
Types of Thyristor :
Thyristors can be classified into the physical construction, turn-on time and turn-off
time.
i.Silicon Controlled Rectifier (SCR)
ii.Gate Controlled Switch (GCS)
iii.Fast Switching Thyristors
iv.Gate Turn-off Thyristors (GTO)
v.Bidirectional Triode Thyristors (TRIAC)
vi.Reverse Conducting Thyristors (RCT)
vii.Static Induction Thyristors (SITH)
viii.FET Controlled Thyristors (FET-CTH)
ix.MOS Controlled Thyristors (MCT)
x.Light Activated Silicon Controlled Rectifiers (LASCR)
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
1) Silicon Controlled Rectifier (SCR)
To control the ac power 10 MW, current
rating of 2000 A, voltage of 1800 V,
frequency can reach 50 KHz.
Dynamic conductivity of a SCR of about
0.01 to 0.1 Ohm while the reverse
approximately is 100,000 Ohm or greater.
To make the thyristor ON is to provide
trigger current P layer close to the cathode.
SCR has three electrodes : anode, cathode
& gate .
The polarity of anode and gate is positive,
cathode is negative.
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
1) Silicon Controlled Rectifier (SCR)
 turned-on/off
The ignition current through the Gate terminal, flow through the junction
between the gate and cathode and out of the cathode. The gate currents must
be positive about 0.1 to 35 mA while the voltage between the gate and cathode
typically 0.7 V.
If the cathode to the anode current falls below the minimum value (Holding
Current = IHO), the SCR will be Off.
 By adjusting the
value of resistance
(potentiometer), then
we seem to adjust the
angle of ignition
(firing delay) SCR.
 The operation angle
is 0 to 90 degree.
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
2) Gate Controlled Switch
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
2) Gate Controlled Switch
Gate-controlled switch is designed for easy opening with a reverse-biased trigger.
A gate controlled switch (GCS) is closed by a positive trigger and opened by a
negative trigger (or by low-current drop out).
Each positive trigger closes the GCS, and each negative trigger opens it. Thus a
square-wave output is obtained, as shown in the figure.
The gate-controlled switch is useful in counters, digital circuits, multivibrators,
voltage regulators and other applications in which a negative trigger is available for
turn-off
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
3) Gate Turn Off Thyristor (GTO) A (Anode)
turned off using gate signal Ia

turning off is difficult, need very large reverse +

Vak
gate current (normally 1/5 of anode current) _
Behave like normal thyristor, but can be turned I
g
off using gate signal K (Cathode)

However turning off is difficult. Need very large GTO: Symbol

reverse gate current (normally 1/5 of anode Ia

current).
Gate drive design is very difficult due to very
Ig>0 Ig=0
large reverse gate current at turn off. Ih
Vr
Ratings: Highest power ratings switch: Voltage: Ibo
Vak<5kV; Current: Ia<5kA. Frequency<5KHz.
Vbo Vak
Very stiff competition: Low end-from IGBT.
High end from IGCT
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Power Thyristor
Power Switches : Power Ratings
CHAPTER 1 : SEMICONDUCTOR COMPONENTS
Conclusion
………THANK YOU………
For your attention