Sie sind auf Seite 1von 12

EEE 121 Introduction to Power Electronics

Lecture 4

Carl Michael F. Odulio, PhD


Outline

w MOSFET
n Switching Characteristics
n Parameters
MOSFET

• voltage controlled device


• ESD sensitive
Types:
• Depletion MOSFETs
• Normally ON (VGS ≥ 0)
• Device is OFF (VGS = -Vp)
• Enhancement MOSFETs
• Normally Off (VGS <VTH)
• Device is ON (VGS ≥ VTH)
MOSFET

a)N-channel Enhancement b) P-channel Enhancement


c) N-channel Depletion d) P-channel Depletion
MOSFET

Triode Region
- linear region
- “ON”
- ohmic region
Saturation Region
- ‘amplifier’
Cutoff Region
- “OFF”

* linear and saturation


regions are reverse
with the BJT
MOSFET

Characteristics
- on-state resistance (RDS(ON))
- PTC
- body diode
- same rating as MOSFET
- typically GP diode
MOSFET

- bypass circuit to replace with a faster diode


MOSFET

Internal Capacitances
- Cgs, Cds, Cgd – not in datasheet
- non linear
- listed are Crss, Ciss, Coss
- Cgd = Crss
- Cgs = Ciss - Crss
- Cds = Coss- Crss
- Crss – small signal reverse transfer
capacitance
- Ciss – small signal input capacitance
with DS shorted
- Crss – small signal output capacitance
with GS shorted
MOSFET

Small signal model with output resistance


MOSFET

Model with junction capacitances


MOSFET

MOSFET Switching Waveforms


MOSFET

- dv/dt limitations