w MOSFET n Switching Characteristics n Parameters MOSFET
• voltage controlled device
• ESD sensitive Types: • Depletion MOSFETs • Normally ON (VGS ≥ 0) • Device is OFF (VGS = -Vp) • Enhancement MOSFETs • Normally Off (VGS <VTH) • Device is ON (VGS ≥ VTH) MOSFET
a)N-channel Enhancement b) P-channel Enhancement
c) N-channel Depletion d) P-channel Depletion MOSFET
Triode Region - linear region - “ON” - ohmic region Saturation Region - ‘amplifier’ Cutoff Region - “OFF”
* linear and saturation
regions are reverse with the BJT MOSFET
Characteristics - on-state resistance (RDS(ON)) - PTC - body diode - same rating as MOSFET - typically GP diode MOSFET
- bypass circuit to replace with a faster diode
MOSFET
Internal Capacitances - Cgs, Cds, Cgd – not in datasheet - non linear - listed are Crss, Ciss, Coss - Cgd = Crss - Cgs = Ciss - Crss - Cds = Coss- Crss - Crss – small signal reverse transfer capacitance - Ciss – small signal input capacitance with DS shorted - Crss – small signal output capacitance with GS shorted MOSFET
