63CTQ100G

63CTQ100G Pb
Pb Free Plating Product
60Ampere,100Volt Heat Sink Dual Common Cathode Schottky Barrier Rectifiers

TO-220AB/TO-220-3L Unit : inch (mm)

FEATURES .419(10.66) .196(5.00)
.387(9.85) .163(4.16)
• Plastic package has Underwriters Laboratory .139(3.55)
.054(1.39)
MIN
.045(1.15)
Flammability Classification 94V-O.

.269(6.85)
.226(5.75)
Flame Retardant Epoxy Molding Compound.

.624(15.87)
.548(13.93)
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters

.50(12.7)MIN
.177(4.5)MAX
free wheeling , and polarlity protection applications.
.038(0.96) .025(0.65)MAX
• In compliance with EU RoHS 2002/95/EC directives .019(0.50)

MECHANICAL DATA .1(2.54) .1(2.54)

• Case: TO-220AB heatsink

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked. Case Case Case Case
• Mounting Position: Any
Positive Negative Doubler Series
• Weight: 2.2 gram approximately. Common Cathode Common Anode Tandem Polarity Tandem Polarity
Prefix "63CT" Prefix "63AT" Prefix "63DT" Prefix "63ST"

MAXIMUM RATINGS (Per Diode Leg)

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current IF(AV) A
(TC = 155°C) Per Diode 30
Per Device 60
Peak Repetitive Forward Current IFRM 60 A
(Square Wave, 20 kHz, TC = 151°C)
Nonrepetitive Peak Surge Current IFSM 350 A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1) TJ +175 °C
Storage Temperature Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Controlled Avalanche Energy (see test conditions in Figures 9 and 10) WAVAL 400 mJ
ESD Ratings: Machine Model = C > 400 V
Human Body Model = 3B > 8000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance − Junction−to−Case (Min. Pad) RqJC 1.0 °C/W
− Junction−to−Ambient (Min. Pad) RqJA 70

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Characteristic Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2) vF V
(iF = 30 A, TJ = 25°C) − 0.80 0.84
(iF = 30 A, TJ = 125°C) − 0.68 0.72
(iF = 60 A, TJ = 25°C) − 0.93 0.98
(iF = 60 A, TJ = 125°C) − 0.81 0.84
Maximum Instantaneous Reverse Current (Note 2) iR mA
(Rated DC Voltage, TJ = 125°C) − 2.0 10
(Rated DC Voltage, TJ = 25°C) − 0.0013 0.01
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

Rev.09T Page 1/3

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/

 63CTQ100G

i , INSTANTANEOUS FORWARD CURRENT (AMPS

i , INSTANTANEOUS FORWARD CURRENT (AMPS

100 100

175°C 175°C
10 10

TJ = 150°C 125°C TJ = 150°C 125°C

1.0 1.0

25°C
25°C

0.1 0.1
F

F
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

IR, MAXIMUM REVERSE CURRENT (AMPS)

1E−01 1E−01
TJ = 150°C
IR, REVERSE CURRENT (AMPS)

1E−02 TJ = 150°C 1E−02

1E−03 1E−03 TJ = 125°C

TJ = 125°C
1E−04 1E−04

1E−05 1E−05
TJ = 25°C
1E−06 TJ = 25°C 1E−06

1E−07 1E−07

1E−08 1E−08
0 20 40 60 80 100 0 20 40 60 80 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

48 26
, AVERAGE FORWARD CURRENT (AMPS)

, AVERAGE FORWARD CURRENT (AMPS)

44 dc 24 RATED VOLTAGE APPLIED

40 22 RqJA = 16° C/W
36 20 RqJA = 70° C/W
SQUARE WAVE
32 18 (NO HEATSINK)
16
28
14 dc
24
12
20
10
16 SQUARE WAVE
8.0
12
6.0 dc
8.0 4.0
F (AV)

F (AV)

4.0 2.0
0 0
I

130 135 140 145 150 155 160 165 170 175 180 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (C°) TA, AMBIENT TEMPERATURE (°C)

Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg

Rev.09T Page 2/3

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/

 63CTQ100G

, AVERAGE FORWARD POWER DISSIPATION (WATTS

60 10000
56 TJ = 175°C TJ = 25°C
52 SQUARE WAVE
48

C, CAPACITANCE (pF)
44
40 1000
36
dc
32
28
24
20 100
16
12
8
4
0 10
0 4 8 12 16 20 24 28 32 36 40 44 48 52 56 60 0 20 40 60 80 100
F (AV)

IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)

P

Figure 7. Forward Power Dissipation Figure 8. Capacitance

+VDD

IL 10 mH COIL

VD BVDUT

MERCURY ID
SWITCH

IL ID
DUT
S1
VDD

t0 t1 t2 t

Figure 9. Test Circuit Figure 10. Current−Voltage Waveforms

Rev.09T Page 3/3

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/