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SAMWIN

SW634

Features N-Channel MOSFET BV DSS (Minimum) R DS(ON) (Maximum) : 250 V : 0.45 ohm
Features
N-Channel MOSFET
BV DSS (Minimum)
R DS(ON) (Maximum)
: 250 V
: 0.45 ohm
: 8.5 A
I D
Qg (Typical)
P D (@TC=25 )
: 28
nc
: 72
W

General Description

This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on

resistance, low gate charge and especially

excellent avalanche characteristics. It is mainly

suitable for half bridge or full bridge resonant

topology like a electronic ballast, and also low power switching mode power appliances.

D G S
D
G
S

www.Dat

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

V

DSS

Drain to Source Voltage

250

V

 

Continuous Drain Current (@Tc=25)

8.5

A

 

I

D

Continuous Drain Current (@Tc=100)

6.5

A

 

I

DM

Drain Current Pulsed

(Note 1)

34

A

V

GS

Gate to Source Voltage

±30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

250

mJ

E

AR

Repetitive Avalanche Energy

(Note 1)

7.2

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.0

V/ns

 

Total Power Dissipation (@Tc=25)

72

W

 

P D

Derating Factor above 25

0.57

W/

T STG ,T J

Operating junction temperature &Storage temperature

-55 ~ +150

 

T

L

Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.

300

Thermal Characteristics

     

Value

Units

Symbol

Parameter

Min

Typ

Max

 

R

θJC

Thermal Resistance, Junction-to-Case

-

-

1.73

/ W

R

θCS

Thermal Resistance, Case-to-Sink

-

0.5

-

/ W

R

θJA

Thermal Resistance, Junction-to-Ambient

-

-

62.5

/ W

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04.10.1

- ℃ / W R θ JA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃ / W

SAMWIN

SW634

Electrical Characteristics (Tc=25unless otherwise noted)

       

Value

 

Symbol

Parameter

 

Test Conditions

Min

Typ

Max

Units

Off Characteristics

 

BV DSS

Drain- Source Breakdown Voltage

V GS =0V,I D =250uA

 

250

-

-

V

BV DSS /

Breakdown Voltage Temperature

I D =250uA,referenced to 25

-

0.544

-

V/

 

Tj

coefficient

   

V DS =250V, V GS =0V

         
 

I

DSS

Drain-Source Leakage Current

V DS =200V, Tc=125

 

-

-

1

uA

 

Gate-Source Leakage Current

V GS =30V,V DS =0V

 

-

-

100

nA

 

I

GSS

Gate-Source Leakage Reverse

V GS =-30V, V DS =0V

 

-

-

-100

nA

On Characteristics

 

V

GS (th)

Gate Threshold Voltage

V DS =V GS ,I D =250uA

 

2.0

-

4.0

V

R

DS(ON)

Static Drain-Source On-state Resistance

V GS =10V,I D =4.0A

 

-

-

0.45

ohm

Dynamic Characteristics

 
 

Ciss

Input Capacitance

 

-

-

1220

 

Coss

Output Capacitance

V GS =0V,V DS =25V, f=1MHz

-

-

130

pF

 

Crss

Reverse Transfer Capacitance

-

-

32

Dynamic Characteristics

 

t

d(on)

Turn-on Delay Time

 

-

-

38

 
 

t

r

Rise Time

V

DD =125V,I D =8.5A G =50ohm

 

-

-

38

t

d(off)

Turn-off Delay Time

R

(Note4,5)

-

-

150

ns

 

t

f

Fall Time

 

-

-

80

 

Q

g

Total Gate Charge

 

-

28

36

 
 

Q

gs

Gate-Source Charge

V DS =200V,V GS =10V, I D =8.5A

-

5

-

nc

 

Q

gd

Gate-Drain Charge (Miller Charge)

 

(Note4,5)

-

10

-

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Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

 

Test Conditions

 

Min.

Typ.

Max.

Unit.

 

I

S

Continuous Source Current

Integral Reverse

G

D
D
s
s
 

- 8.5

-

   

I

SM

Pulsed Source Current

p-n Junction Diode in the MOSFET

 

- 34

-

 

A

V SD

Diode Forward Voltage

I S =8.5A,V GS =0V

 

S

 

- 1.5

-

 

V

 

t

rr

Reverse Recovery Time

I S =8.5A,V GS =0V,

   

170

- -

 

ns

 

Q

rr

Reverse Recovery Charge

dI

F /dt=100A/us

 

0.85

- -

 

uc

dI F /dt=100A/us   0.85 - -   uc NOTES 1. Repeativity rating: pulse width limited

NOTES

1. Repeativity rating: pulse width limited by junction temperature

2. L=5.6mH,I AS =8.5A,V DD =50V,RG=0ohm, Starting TJ=25

3. ISD8.5A,di/dt100A/us,V DD BV DSS , Starting TJ=25

4. Pulse Test: Pulse Width300us,Duty Cycle2%

5. Essentially independent of operating temperature.

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Test: Pulse Width ≤ 300us,Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. 2 /

SAMWIN

SW634

V GS top: 15V 10V 9V 8V 7V 6V 5.5V 1 10 5V bottom:4.5V 0
V GS
top: 15V
10V
9V
8V
7V
6V
5.5V
1
10
5V
bottom:4.5V
0
10
4.5V
-1
10

10 -1

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10 0

V ds ,Drain-to-Source voltage [V]

10 1

Fig 1. On-State Characteristics

1.00 0.75 V GS =20V V GS =10V 0.50 0.25 0.00
1.00
0.75
V GS =20V
V
GS =10V
0.50
0.25
0.00

0

2

4

6

8

10

12

I D , Drain Current[A]]

14

16

Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage

On Resistance Variation vs. Drain Current and Gate Voltage Fig 5. Capacitance Characteristics (Non-Repetitive) Fig 2.

Fig 5. Capacitance Characteristics (Non-Repetitive)

Voltage Fig 5. Capacitance Characteristics (Non-Repetitive) Fig 2. Transfer Characteristics 1 10 150 25 0 10

Fig 2. Transfer Characteristics

1 10 150 25 0 10 Note: 1.v GS =0v 2. 250us test -1 10
1
10
150
25
0
10
Note:
1.v GS =0v
2.
250us test
-1
10

0.2

0.4

0.6

0.8

1.0

1.2

V SD ,Source-Drain Voltage[V]

1.4

1.6

Fig 4. On State Current vs. Allowable Case Temperature

12 V DS =200V 10 V DS =125V V DS =50V 8 6 4 2
12
V
DS =200V
10
V
DS =125V
V
DS =50V
8
6
4
2
0

0

5

10

15

20

Q G ,Total Gate Charge [nC]

25

Fig 6. Gate Charge Characteristics

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=50V 8 6 4 2 0 0 5 10 15 20 Q G ,Total Gate Charge

SAMWIN

SW634

1.2 1.1 1.0 0.9 Note: 1.V GS =0V 2.I D =250uA 0.8
1.2
1.1
1.0
0.9
Note:
1.V GS =0V
2.I D =250uA
0.8

-100

-50

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0

50

100

T J ,Junction Temperature [ o C]

150

200

Fig 7. Breakdown Voltage Variation vs. Junction Temperature

2 10 Operation In This Area Li mted By R DS(ON) 10us 100us 1 10
2
10
Operation
In This Area
Li
mted By R
DS(ON)
10us
100us
1
10
1ms
10ms
0
10
Note:
1.Tc=25
C
2.Tj=150
C
3.Single Pulse
-1
10
10 0
10 1
10 2
10 3
I D , Drain Current[A]

V D ,Drain-Source Voltage[V]

Fig9. Maximum Safe Operating

3.0 2.5 2.0 1.5 1.0 0.5 Note: 1.V GS =10V 2.I D =4A 0.0 -50
3.0
2.5
2.0
1.5
1.0
0.5
Note:
1.V GS =10V
2.I D =4A
0.0
-50
0
50
100
150
R DS(ON) (Normalized)
Drain to source on resistance

T J ,Junction Temperature[ o C]

Fig 8. On-Resistance Variation vs. Junction Temperature

9 8 7 6 5 4 3 2 1 0 25 50 75 100 125
9
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
I D ,Drain Current[A]

T c ,Case Temperature [ o C]

Fig 10. Maximum Drain Current Vs. Case Temperature

0 1 0 D = 0 . 5 0 . 2 0 . 1 0
0
1
0
D
=
0
. 5
0
. 2
0
.
1
0
. 0
5
- 1
1
0
0
. 0
2
0
. 0
1
S
I N
G
L
E
P
U
L
S
E
N
o
t e
:
. Z
(t) =
1
. 7
3
o C
/ w
M
a
x
1 C
J
2 t y
. D
u
F
a
c
t o
r
, D
=
t 1
/ t 2
3 j - T
. T
c
=
P
*
Z
(t)
D
M
J
C
- 2
1
0
- 5
- 4
- 3
- 2
- 1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0

t

1

, S

q

u

a

r e

W

a

v

e

P

u

l s

e

D

u

r a

t

i o

n

( s

e

c

)

1

Fig 11. Transient Thermal Response Curve

4/6

REV0.1

04.10.1

1 , S q u a r e W a v e P u l s

SAMWIN

SW634

Same Type as DUT 50KΩ 200nF 300nF V DS V GS DUT 1mA www.DataSheet4U.com
Same Type
as DUT
50KΩ
200nF
300nF
V DS
V GS
DUT
1mA
www.DataSheet4U.com

V GS

10V

Q g Q gs Q gd Charge
Q g
Q gs
Q gd
Charge

Fig 12. Gate Charge test Circuit & Waveforms

R L V DS V DD (0.5 rated V DS ) 10V DUT R G
R L
V
DS
V DD
(0.5 rated V DS )
10V
DUT
R
G
Pulse
Generator

V

V

DS 90% 10% in t f t r t d(on) t d(off) t on t
DS
90%
10%
in
t f
t r
t d(on)
t d(off)
t on
t
off

Fig 13. Switching test Circuit & Waveforms

L

V DS V DD R G DUT 10V
V DS
V DD
R G
DUT
10V

BV DSS

I AS

V DD

1 BV DSS EAS= --- L L I AS 2 --------------- 2 BV DSS -V
1
BV DSS
EAS= --- L L I AS 2 ---------------
2
BV DSS -V DD
V
DS (t)
I D (t)
t p
Time

Fig 14. Unclamped Inductive Switching test Circuit & Waveforms

5/6

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-V DD V DS (t) I D (t) t p Time Fig 14. Unclamped Inductive Switching

SAMWIN

SW634

+ DUT V DS L Driver R G Same Type as DUT V GS ●
+
DUT
V DS
L
Driver
R G
Same Type
as DUT
V GS
● dv/dt controlled by RG
● Is controlled by pulse period

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V DD

D = --------------------------- Gate Gate Pulse Pulse Period Width V GS 10V (Driver) I FM
D = --------------------------- Gate Gate Pulse Pulse Period Width
V GS
10V
(Driver)
I FM ,Body Diode Forward Current
di/dt
I S
(DUT)
I RM
Body Diode Reverse Current
V DS
(DUT)
Body Diode Recovery dv/dt
V f
V DD
Body Diode
Forward Voltage Drop

Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms

6/6

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04.10.1

V DD Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit &