Beruflich Dokumente
Kultur Dokumente
1
POWER ELECTRONIC
DEVICES
1.0 INTRODUCTION
Device Symbol
A
SCR G
K
T1
DIAC T2
MT2 MT1
TRIAC
G
A A A
GTO SCR G G G
K K K
G
LASCR A K
G
IGBT
E
A K
SUS
G
SBS
T1 T2
GA
A K
SCS
GK
A
PUT K
G
Power Electronic Devices 1.5
Fig. 1.2
For large current applications, thyristor need
better cooling, this is achieved to a great extent by
mounting them onto heat sinks. SCR rating has improved
considerably since its introduction in 1957.
Now SCRS of voltage rating 10kV and an rms
current rating of 3000A with Corresponding power-
handling capacity of 30MW are available such a high
power thyristor can be switched on by a low voltage supply
of about 1A and low.
An SCR is so called because silicon is used for its
construction and its operation as a rectifier can be
Power Electronic Devices 1.7
+ LOAD A
Va
E S
G
R
+
_ Es
_ K
(a) Circuit diagram for obtaining V-I characteristics of Thyristor
+Ia
K
Forward conduction
mode (on-state)
Latching current
Holding current Ig3 > Ig2 > Ig1 > Ig0 = 0
Ig3 I Ig1 Ig = 0
g2
Reverse leakage
current IL
mA
−Va VBR IH
+ A _ A
Forward
leakage
current
p p
J1 J1
n n
J2
J2
p p
G J3 J3
n G
n
Reverse
_ leakage
K + K current
Ia
A
Ia p
n IB
p α1, β1 1
J1 Q1
Ic 2
n n
J2 Ic1 J2 p IC
2
p p IC I2
n
G Ig J3 1
n α2, β2
Q2
G Ig IB p
IC
2 2
K n
IK
K
(b) and (c) Two transistor model
Fig. 1.5
1.12 Power Electronics
(
Ia = α1Ia + ICBO + α 2 Ia + Ig + ICBO
1
) 2
1 − ( α1 + α 2 )
Power Electronic Devices 1.13
3. Power rating
4. dv/dt rating
5. di/dt rating
6. Turn - ON and Turn - OFF times
7. Latching and holding currents
8. Gate circuit voltage, current and power ratings.
Some subscripts are associated with voltage and
current ratings for convenience in identifying them.
First subscript letter indicates the direction or state:
D → Forward - blocking region with gate circuit open
T → ON state
R → Reverse
F → Forward except for the Gate (G).
Second subscript letter indicates the operating values:
W → working value
R → Repetitive value
S → Surge or non - repetitive value
T → Trigger.
Third subscript letter 'M' indicates the maximum
or peak value.
VDSM
VDRM VRRM
VDWM VRSM
VBR
ωt
–Va +Va
VRRM VB0
Reverse
Voltage
VRWM VDSM
VDRM
VRSM
(a) (b)
Fig. 1.6 Anode voltage ratings during the Blocking state of SCR
di
5. rating :
dt
It indicates the maximum rate of rise of current
from Anode to Cathode without any damage to the
device.
When a thyristor is turned on, conduction starts
at a place near the gate. This small area of conduction
spreads to the whole area of junction. If the rate of rise
of Anode current ( di dt ) is large as compared to the
spreading velocity of carriers across the Cathode
junction, local hot spots will be formed near the gate
connection on account of high current density. This
causes the junction temperature to rise above the safe
limit and as a result, SCR may damaged permanently.
Typical values of di dt are in between 20 to 500 A/μ sec.
Power Electronic Devices 1.19
Anode voltage va
and gate current ig
A 0.9 Va
Va
Ig
0.9 Ig On state voltage
drop across SCR
∴ TON = t d + t r + t p 0.1 Va
O t
Anode current Ia
Ia = Load current
0.9 Ia
0.1 Ia
O td tr tp t
Forward
leakage ton
current
Voltage lied
ge app
e volta
Revers
0
se v =
ecau
oint b
n t zero p
e
Curr
O t
trr tr
toff
y b h f
1
a g
O Ig
Anode
A A A
PNP
NPN
G G
G
Gate
K K K
(i) (ii) (iii)
Cathode
N+ N+
P+
P+ N+ P+ N+ P+
Anode
Fig. 1.10 Basic GTO structure showing anode to N-base short-circuting spots
Power Electronic Devices 1.25
Ia
If Ig < 200 mA,
the GTO behaves as
a Transistor With IG Greater value
With IG = 0
VBR 2A
−Va Va
−Ia
Fig. 1.11 Static V-I Characteristics
Fig. 1.11 shows the V-I characteristics of GTO. It
is having large value of latching current about 2A as
compared to only 50-100 mA conventional thyristor of
the same power output. The available GTO rating is 25KV,
1400A.
di di
2) Less rating. 2) More rating.
dt dt
3) Efficiency is low 3) Efficiency is more.
because of losses
in commutation circuit.
Power Electronic Devices 1.27
1.13 DIAC
T1
T1
N1
P P
N N
P
N P
T2
T2
Blocking state
IBO
VBO2
–V +V
O VBO1
IBO
Blocking state
1
exceeds VBO the structure PNPN conducts. At voltages
2,
less than breakover voltage, a very small amount of
current called leakage current flows through the device.
The device remains practically in non–conducting mode.
This portion of characteristics shown by region OA in
Fig. 1.12(c) is called as blocking state. At point ‘A’, when
the voltage level reaches the breakover voltage, the
device starts conducting. During its conduction, the
device exhibits negative resistance characteristics.
The current flowing in the device starts increasing
and the voltage across it starts decreasing. This portion
of characteristic shown by AB in Fig. 1.12(c) is known
as conduction state. The value of current corresponding
to the point A is known as the breakover current, similar
explanation holds good for negative half–cycle of
triggering. The characteristics in positive half cycle and
negative half cycle are same because the doping level is
same at two junctions of the device. Once the device
starts conducting, the current flowing through it is very
high which is to be limited by some external resistance.
The value of breakover voltage for a commonly
used diac is 30V and it is lie in between 30-50V.
1.13.1 Applications
Gate N2
N2
N3
N3 P2
P2
N1
N1 Ohmic contact
P1
N4 P1
Metallic lead
MT2
MT2
N3 N2
P2
N1
N4 P1
Gate
MT1
MT2
Ia
Quadrant I
conduction (MT2 positive)
Ig2 Ig1 Ig0 Ig2 > Ig1 > Ig0
Blocking state
VBO2
−Va Va
0 VBO1
Forward blocking state
Quadrant III
(MT2 negative)
−Ia
3. Heat control.
4. Speed control of A.C motors.
5. As a static switch.
SCR TRIAC
1. It’s a unidirectional 1. It is a bidirectional
device. device.
2. High power handling 2. Low power ratings.
capacity.
3. It is triggered by 3. It is triggered by either
narrow positive pulse positive or negative gate
applied to the gate. signal.
4. It has fast turn–off, 4. It has more turn–off
so it can be used to time. Hence it’s
switching frequencies applications are limited
upto KHZ. upto 400 HZ.
clamped at the Ig Ig
G
Cathode pote- MT1 (- ve)
ntial of MT1, a N3 N2
Pilot of Ig
potential gra- P2 Final
Initial
dient exists N1 conduction
conduction
(P1N1P2N2)
(P1N1P2N3)
across layer P2, P1
its left hand
region being at
higher potential MT2 (+ ve)
hand region. A
current shown dotted is thus established in layer P2
from left to right.
This current is similar to conventional gate current
of an SCR. As a result, the right–hand part of triac
consisting of main structure P1N1P2N2 begins to conduct.
The device structure P1N1P2N3 may be regarded as pilot
SCR and the structure P 1N1P2N 2 as the main SCR. It
can be stated that Anode current of pilot SCR serves as
the Gate current for the main SCR. Therefore, the device
with MT 2 positive and Gate current negative is less
sensitive and therefore, more Gate current is required.
iii. MT2 is negative but Gate current is positive :
The Gate current Ig forward biases P2N2 junction,
Fig. 1.15(c). When MT2 is negative with respect to MT1,
junction P2 N1, P1 N4 forward biased and junction N1 P1
is reverse biased. When Ig flows through P2 N2 junction,
layer N 2 injects electrons into P 2 layers as shown by
1.36 Power Electronics
junction N1 P1 breaks
N2
down as in a Final P2 Ig
conduction
conventional thyri- (P2N1P1N4) N1
Ig MT1 (+ve)
G
N3
P2 Ig
N1
P1
N4
MT2 (–ve)
R3 Load
R4 R2 A
UJT
Full wave B2
rectified i/p E
Z B1
C G
VC K
R1
Rectified
input
voltage
0 π t
2π 3π 4π
Voltage VC
across
capacitor
0 π 2π 3π 4π t
VB
1
V0
Output
voltage
0 α π π+α 2π t
Voltage VJ
across
thyristor
0 π t
2π 3π 4π
Fig. 1.17 Voltage wave froms
The connections of R4, C, UJT and R1, R2 represents
the UJT relaxation oscillator.
Full wave rectified a.c is employed as a power
source to the SCR instead of using direct ac supply.
Therefore, it increases the load current capability by
two times and also it eliminates the negative half cycle.
Power Electronic Devices 1.39
Load
R1 MT2
R
Vs VT
T1 T 2 R2
Vm sin ωt
G
VC C MT1
DIAC
V Vm sin ωt
0 π 2π 3π 4π ωt
VC
0 π 3π ωt
2π
α α α α
V0
π+α 2π 3π+α 4π
α π 2π+α 3π ωt
π+α 2π 3π+α 4π
0 α π ωt
2π+α 3π
Fig. 1.19 Wave forms for traic firing circuit using diac for low values of R
1.42 Power Electronics
+ VL − Rmin
Load
A R
VS Vm sin ωt VT
G
K D
Rg
V
Vm sin ωt
0 π 2π 3π 4π ωt
VL
2π 4π
0 π ωt
α 3π
VT
2π 3π 4π
0 α π ωt
2π+α
+Ia
A A
P Ia
J1 G
G N
J2 Va
P
J3 −Va +Va
N
K K
−Ia
Fig. 1.22
PUT is used mainly in time–delay Logic and SCR
trigger circuits. Its largest rating is about 200V and
1A.Circuit symbol and V-I characteristics of a PUT are
shown in Fig. 1.22 (b) and (c) respectively.
In a PUT, G is always biased positive with respect
to Cathode. When Anode voltage exceeds the gate voltage
by about 0.7V, junction J1 gets forward biased and PUT
turns on. When Anode voltage becomes less than gate
voltage, PUT turned off.
A A (Anode)
G (Gate)
P
G
N
P
Avalanche
diode N
K K (Cathode)
(a) Schematic diagram (b) Equivalent circuit
1.46 Power Electronics
+Ia
G IS
−Va 0 VS +Va
K −Ia
(c) Symbol (d) V-I characteristics
Fig. 1.23
A silicon unilateral switch (SUS) is similar to a
PUT, except for the fact that it has an internally built
low–voltage avalanche diode between the Gate and the
Cathode. The symbol for SUS and its equivalent circuit,
schematic diagram are shown in Fig. 1.23(a), (b) & (c).
The anode to cathode electrical (V-I) characteristics are
shown in Fig. 1.23(d) for no external gate connection to
the device. Because of the presence of avalanche diode,
SUS turns on for a fixed Anode to gate voltage. The SUS
usually used in the basic relaxation oscillator circuit,
timing, logic and trigger circuits.
Its rating are about 20V and 0.5A.
T1
T1
−VS IS
Gate
G −V −IS VS +V
T2 T2 −I
(a) Equivalent circuit (b) Symbol (c) V-I characteristics
Fig. 1.24
Since the device operates as a switch with both
polarities of applied voltage, it is particularly useful for
triggering the triac with alternate positive and negative
gate pulses, digital circuits and pulse generators etc.
A
A
P OFF GA
J1 GA pulse
N
ON GK J2
pulse P
J3 ON
N pulse
GK
OFF
pulse K K
(a) Schematic diagram (b) Symbol
+Ia
−Va 0 +Va
−Ia
(c) V-I characteristics
Fig. 1.25
The SCS can be triggered ‘on’ by either a positive
pulse at GK or a negative pulse at GA. In the on–state,
the SCS behaves like an SCR, namely, as a low
resistance with a voltage drop of typically 1V.
The SCS can be turned off in any one of three ways :
1. By reducing its anode current below IH (same as
SCR).
2. By applying a negative pulse at GK.
3. By applying a positive pulse at GA.
Power Electronic Devices 1.49
GK
K T2 K
VBR IH
G Blocking state
K −Ia
dv
(Ex : LED and to accomplish high di and capability).
dt dt
Once the LASCR is triggered to the on state, it behaves
like a normal SCR. The LASCR will stay in ‘on’ state
even if the light disappears. It will turn ‘off’ only if its
Anode current is decreased below I H.
The LASCR is most sensitive to light when its gate is
open. The sensitivity can be varied by connecting a
variable resistor between gate and cathode. In this way,
the level of light at which the LASCR will trigger can be
varied.
SCR LASCR
6) Smbol : 6) Smbol :
A A
G G
K K
Power Electronic Devices 1.53
N+ N+ N+ N+
P+ P+
–
– 0.014 inch N 0.01 inch
N
N+
P+ P+
Cathode Cathode
Fig. 1.27 Conventional SCR Fig. 1.28 Asymmetric SCR (ASCR)
+
A narrow N-base is possible if a highly doped N
+
layer introduced adjacent to the P emitter as shown in
+
Fig. 1.28. The new N layer acts as a buffer, preventing
the depletion region from extending into the P + layer
and allowing a higher average electric field in the lightly
doped N-region. Consequently, a thinner N-base is
obtained for the same forward blocking capability.
+ +
In the reverse blocking mode, the N P junction
quickly avalanches at less than 50V.
The V-I characteristics of ASCR is shown in
Fig. 1.29.
Power Electronic Devices 1.55
+Ia
A With IG
IG = 0
IH
VBR
−Va 0 VBO +Va
−Ia
K
(a) Symbol (b) V-I characteristics
Fig. 1.29
Advantages of ASCR over conventional SCR :
1. Smaller size and weight.
2. Less cost of commutating circuit.
3. Operation at switching frequencies of 20 kHZ.
4. High efficiency due to low ON state voltage drop.
Diode
K
Fig. 1.30 Reverse conduting Thyristor
1.56 Power Electronics
Anode
Gate
G
G pnp
Off-FET
(n-chanel)
OFF npn On-FET
ON (p-chanel)
C Cathode
C
(a) Equivalent circuit (b) Circuit symbol
Fig. 1.31 MCT
MOS- Controlled thyristor is a combination of four
layer thyristor and MOS- gate structure. The four layer
structure is represented by two transistor analogy. MCT
consists of one on-FET, one off-FET and two transistor.
The on–FET is a P-channel MOSFET and off–FET is an
n–channel MOSFET. An arrow towards gate terminal
indicates n–channel MOSFET and otherwise P–channel
MOSFET. The two transistors in the equivalent circuit
indicate that there is a regenerative feed back. Fig
1.31(b) gives the circuit symbol.
An MCT is turned–on by a negative voltage pulse
at the gate with respect to the anode and is turned–off
by a positive voltage pulses.
Turn – on process :
MCT is turned on by applying a negative voltage
pulse at the gate with respect to Anode with the
application of this negative voltage pulse, on–FET gets
turned–on and off–FET is off with on–FET on, current
begins to flow from anode A, through on–FET and then
as the base current and emitter current of npn transistor
1.58 Power Electronics
10 μm 19
n+ 10 cm
-3
Collector
–
The n layer is called collector drift region and its
thickness is dependent on the breakdown voltage of the
transistor. For high amplification purpose, the base
thickness of the BJT should be small. If it is too small
causes the breakdown voltage of the BJT decreases.
There the thickness of the base is so designed based
upon these two values. In general, the base thickness
in a power BJT is very high as compared to low power
⎛ I ⎞
BJT, which causes high current gain ⎜⎜ β = C ⎟⎟ .
⎝ IB ⎠
Saturation Secondary
IC Quasi breakdown
saturation
IB6
IB5 Primary
IB4 breakdown
IB3
IB2
IB1 Active Region
O VCE
IB = 0
− +
E G
VG
−−−−−−−−−−−−−−
+ + + + + + + + + + + + + + +
n+ n+ n+ n+
Load J3
J3
p p
− J2 J2
VCC n− n−
+ J1 J1
p+ substrate p+
C Collector
– +
circuits the n region with n emitter regions. An
electron movement in the n–channel, in turn causes
+
substantial hole injection from p substrate layer into
–
the epitaxial n layer. Therefore a forward current is
established, shown in Fig. 1.34.
+ –
The three layers p , n and p constitute a pnp
+ –
transistor with p as emitter, n as base and p as
– +
collector. Also n , p and n layers constitute npn
–
transistor as shown in fig 1.35(a). Here n serves as
base for pnp transistor also as collector for npn
transistor. Further p serves as collector for pnp device
and also base for npn transistor. The two pnp and npn
transistors can, therefore, be connected as shown in
Fig. 1.35(b) to give the equivalent circuit of an IGBT.
Fig. 1.35(c) shows the symbol for IGBT with gate (G),
emitter (E) and collector (c) terminals.
E G
n+ n+ n+ n+
npn
p
J2
pnp n−
J1
p+ substrate
C
pnp
n
p
npn
Resistance G
G Offered by
N-channel
E
(b) Equivalent (c) Symbol structure
Fig. 1.35
IGBT characteristics :
The circuit of Fig. 1.36(a) shows the various
parameters to find out IGBT characteristics.
IC VGE5 > >VGE4 >VGE3 >VGE2 > VGE1
IC
IC (A)
R
(A)
VGE5
C +
+ VCC VGE4
_
RS G VGE3
+ VGE2
VCE
E VGE1
VG RGE VGE VRM
0 VCE VGE
_ _ 0 VGET
R1
ZS
LOAD
D4
D1
G
A K
R2 Z
T1 T2
A.C mains
D2
K G A D3
+
Z
D.C Th
mains Load
R
−
+ R
Load
C
D.C supply
− Ta
T
Load
A R1 K
D1
G
A.C supply R3
T1 T2
G
D2
K R2 A
G i
+
A K i
T L
D.C supply C
t
R Load 0 A
−
(a) For low values of load resistance
G i
+
A K
T L
D.C supply
C R Load t
0 A
−
(b) For high values of load resistance
L D
+ −
VS ic v0 Load
VC
TA
− −
0 t
igA
0 t
i0
I0
0 t
iJ1
I0
0 t
ic ω0 t = π
ic I0
0 t
tc for T1
–IP
vc
vs Vs
t
0
–Vs
T1 t1 t2 t3 t4 t5
ON TA TA T1
ON OFF OFF
0 t
ig2
0 t
iT1 Vs Vs
R1 R1
⎛ 1 1 ⎞ ⎛ 1 2 ⎞
Vs ⎜ + Vs ⎜ + ⎟
⎟ ⎝ R1 R 2 ⎠
⎝ R1 R 2 ⎠ t
0
vT1
tc1
Vs
0 t
–Vs Vs (1 − 2e − t/R1C
)
Vs
iT2 R2
⎛ 2 1 ⎞
Vs ⎜ + ⎟
⎝ R1 R 2 ⎠
0 t
vT2
tc2
Vs Vs
0 t
–Vs
vc
Vs
0 t
–Vs
ic
Vs − t/R 2C 2Vs − t/R 2C
e e
R2 2Vs R2
Vs
R2 R2
t
0 −2Vs
−2Vs − t/R 1C
R1 e
R1
T1 t1 t2 t3
ON T1 OFF T1 ON
T2 ON T2 OFF
⎡ 1 1 ⎤
thyristor current i T = i1 + i c = Vs ⎢ + ⎥ begins to
1
⎢⎣ R1 R 2 ⎥⎦
flow shown in Fig. 1.42(b) & 1.43.
1.78 Power Electronics
Vs
ic ( t ) =
−t R C
⋅e 2
R2
(
v c ( t ) = Vs 1 − e
− t R 2C
)
voltage across thyristor T2 is v T = v c ( t ) .
2
− 2VS ⎡ 2 1 ⎤
v T = 0, v T = − VS , i C = and i T = Vs ⎢ + ⎥,
2 1
R1 2
⎢⎣ R1 R 2 ⎥⎦
2VS
iC ( t ) =
− t R1C
⋅e
R1
⎡ 2 1 ⎤ V
its value VS ⎢ + ⎥ to S with time constant R C.
R
⎣⎢ 1 R 2 ⎥
⎦ R2 1
–
(a) Circuit diagram
1.80 Power Electronics
0 t
igA
0 t
i0
I0
0 t
ic
Ip
0 t
π/ω0 –I0
it1
I0+Ip
I0
0 t
vc
Vs Vs
t
0 tc1 –Vs
vt1
tc
Vs
0 t
–Vs
t=0 t1 t2
T1 ON T1 OFF TA OFF
TA ON
C sinω t = I sinω t.
i c = VS 0 P 0
L
When ω0t = π, i C = 0. Between 0 < t < ( π / ω0 ) ,
iT = I0 + IP sin ω0 t. Capacitor voltage changes from +VS to
1
Fig. 1.44(b).
At t 1 , auxiliary thyristor T A is turned on.
Immediately after TA is on, capacitor voltage (VS) applies
a reverse voltage across main thyristor T 1 , so that
v T = − VS at t1 and SCR T1 is turned off and i T = 0 . The
1 1
T1 T2 L T3
+ +
L +
VS O C 2V1 V1
A −
D
− −
VT
+ − io
T +
Vs = Vm sin ωt Vo R
0 π 2π 3π ωt
io
Vo,Io
Vo
0 ωt
π 2π 3π
VT
0 ωt
_V
m
(b) Waveforms
Fig. 1.46 Class - F commutation
1.84 Power Electronics
SUMMARY
ANSWERS
1. c 2. a 3. b 4. c 5. a 6. b 7. c
8. a 9. a 10. d 11. c 12. a 13. c
REVIEW QUESTIONS
★❇★