RPR-359F

Sensors

Reflective photosensor (photoreflector)

RPR-359F

The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a
high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in
plastic with a visible light filter, there is almost no effect from stay light.

!Application !External dimensions (Units : mm)

Copiers, Compact disc players
Notes :
8.7±0.1
1. Unspecified tolerance shall be ±0.2.
0.5 3.6 0.5 3.6 0.5 2. Dimension in parenthesis are show
for reference.

0.65
!Features 1 Cathode
2 Anode

4.5±0.1
1 3
1) A plastic lens is used for high sensitivity. 2 4
3 Collector
4 Emitter

2) A built-in visible light filter minimizes the influence of

0.65
stray light. 0.35

3) Low collector-emitter saturation voltage.

5.8±0.1
4) Lightweight and compact.

2.1±0.5 4.4
(4.2) (2.5)

5.8±0.5
0.6±0.1
12Min.
2.0±0.3

4− 0.5±0.1

!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Forward current IF 50 mA
Input
Reverse voltage VR 5 V
(LED)
Power dissipation PD 80 mW
Collector-emitter voltage VCEO 30 V
Output Emitter-collector voltage VECO 4.5 V
(Photo-
transistor) Collector current IC 30 mA
Collector power dissipation PC 100 mW
Operating temperature Topr −25∼+85 ˚C
Storage temperature Tstg −40∼+100 ˚C

1/3
 RPR-359F
Sensors

!Electrical and optical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Input Forward voltage VF − 1.3 1.6 V IF=50mA

characteristics Reverse current IR − − 10 µA VR=5V

Output Dark current ICEO − − 0.5 µA VCE=10V

characteristics Peak sensitivity wavelength λP − 800 − nm −
Collector current IC ∗ 200 500 1800 µA VCC=5V, IF=20mA, RL=100Ω, d=3.5mm
Transfer
characteristics Collector-emitter saturation voltage VCE(sat) − 0.1 0.3 V IF=20mA, IC=100µA
Response time tr·tf − 10 − µs VCC=10V, IF=20mA, RL=100Ω
∗ Standard paper (90% reflection)

!Electrical and optical characteristic curves

1A
COLLECTOR POWER DISSIPATION : PD/PC (mW)

100 2.0
PC Ta=25°C
FORWARD CURRENT : IF (mA)

FORWARD VOLTAGE : VF (V)

80 1.6
PD 100

60 1.2
10 10mA
1mA
40 0.8
POWER DISSIPATION /

1
20 0.4

0 0.1 0
0 20 40 60 80 100 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100
AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V) AMBIENT TEMPERATURE : Ta (°C)

Fig.1 Power dissipation / collector power Fig.2 Forward current Fig.3 Forward voltage
dissipation vs. ambient temperature vs. forward voltage vs. ambient tempereture

10
VCC=5V 2.4 Standard paper
Standard paper (90% reflection)
COLLECTOR CURRENT : IC (mA)

2.2
COLLECTOR CURRENT : IC (mA)

(90% reflection) d=3.5mm

d=3.5mm
DARK CURRENT : ICEO (µA)

2.0
1.8 1 VCE=30V
1 IF=40mA 20V
1.6 10V
1.4
1.2 30mA 0.1
1.0
0.1 0.8 20mA
0.6 15mA 0.01
0.4 10mA
0.2 5mA
0.01 0 0.001
0.1 1 10 100 0 5 10 15 20 25 −100 −80 −60 −40 −20 0 20 40 60 80 100 120 140
FORWARD CURRENT : IF (mA) COLLECTOR−EMITTER VOLTAGE : VCE (V) AMBIENT TEMPERATURE : Ta (°C)

Fig.4 Collector current Fig.5 Output characteristics Fig.6 Dark current

vs. forward current vs.ambient temperature

2/3
 RPR-359F
Sensors

160 100

RELATIVE COLLECTOR CURRENT : IC (%)

RELATIVE COLLECTOR CURRENT : IC (%)

150
140 d 140

FORWARD CURRENT : IF (mA)

130 80
120 120
110
100 100 60
90 VCE=5V
80 IF=20mA 80
70 40
60 60
50
40 40
20
30
20 20
10
0 0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 −60 −40 −20 0 20 40 60 80 100 0 20 40 60 80 100

DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C)

Fig.7 Relative output vs. distance Fig.8 Relative output Fig.9 Forward current
vs. ambient temperature vs. ambient temperature

!Circuit for testing transfer characteristics

Reflector

d=3.5mm

IF IC
VCC=5V
VCC IF=20mA

3/3
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.