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AO4805
Dual P-Channel Enhancement Mode Field Effect Transistor
D1 D2
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G1 G2
S1 S2
SOIC-8
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 50 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 73 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 31 40 °C/W
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
50 25
-10V -8V -6V
VDS=-5V
-5.5V
40 20
-5V
30 15
-ID (A)
-ID(A)
20 -4.5V 10
125°C
10 VGS=-4V 5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
30 1.4
ID=-8A
25 VGS=-6V 1.3
Normalized On-Resistance
VGS=-10V
20
1.2
RDS(ON) (mΩ)
15
VGS=-10V 1.1 VGS=-4.5V
10
1
5
0.9
0
0 5 10 15 20 25 0.8
-ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature
60 1.0E+01
50 1.0E+00
ID=-8A
1.0E-01
40 125°C
RDS(ON) (mΩ)
1.0E-02
-IS (A)
30 125°C
1.0E-03
20
25°C 1.0E-04
25°C
10 1.0E-05
0 1.0E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
10 3000
VDS=-15V
ID=-8A 2500
8 Ciss
Capacitance (pF)
2000
-VGS (Volts)
6
1500
4 Coss
1000
Crss
2
500
0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
40
TJ(Max)=150°C TJ(Max)=150°C
TA=25°C 10µs TA=25°C
100µs
RDS(ON) 1ms 30
10.0 limited
Power (W)
-ID (Amps)
10ms
20
0.1s
1.0
1s
10
10s
DC
0
0.1
0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z θJA Normalized Transient
RθJA=62.5°C/W
Thermal Resistance
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
θ
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
NOTE:
LOGO - AOS LOGO
4805 - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
LN - ASSEMBLY LOT CODE
Rev. A
ALPHA & OMEGA SO-8 Tape and Reel Data
SEMICONDUCTOR, INC.
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation