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BS170

Small Signal MOSFET


500 mA, 60 Volts
N−Channel TO−92 (TO−226)

Features
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• This is a Pb−Free Device*

MAXIMUM RATINGS 500 mA, 60 Volts


Rating Symbol Value Unit RDS(on) = 5.0 W
Drain −Source Voltage VDS 60 Vdc
N−Channel
Gate−Source Voltage
− Continuous VGS ± 20 Vdc D
− Non−repetitive (tp ≤ 50 ms) VGSM ± 40 Vpk
Drain Current (Note) ID 0.5 Adc
Total Device Dissipation @ TA = 25°C PD 350 mW
G
Operating and Storage Junction TJ, Tstg −55 to °C
Temperature Range +150
S
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current. TO−92 (TO−226)
CASE 29
*For additional information on our Pb−Free strategy and soldering details, please STYLE 30
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D. 12
3

MARKING DIAGRAM
& PIN ASSIGNMENT

BS170
AYWWG
G

1 2 3
Drain Gate Source

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:


November, 2017 − Rev. 7 BS170/D
BS170

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)


Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate Reverse Current IGSS − 0.01 10 nAdc
(VGS = 15 Vdc, VDS = 0)
Drain−Source Breakdown Voltage V(BR)DSS 60 90 − Vdc
(VGS = 0, ID = 100 mAdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage VGS(Th) 0.8 2.0 3.0 Vdc
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−Source On Resistance rDS(on) − 1.8 5.0 W
(VGS = 10 Vdc, ID = 200 mAdc)
Drain Cutoff Current ID(off) − − 0.5 mA
(VDS = 25 Vdc, VGS = 0 Vdc)
Forward Transconductance gfs − 200 − mmhos
(VDS = 10 Vdc, ID = 250 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Input Capacitance Ciss − − 60 pF
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time ton − 4.0 10 ns
(ID = 0.2 Adc) See Figure 1
Turn−Off Time toff − 4.0 10 ns
(ID = 0.2 Adc) See Figure 1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION
Device Package Shipping†
BS170 TO−92 (TO−226) 1000 Unit/Tube
(Pb−Free)
BS170RLRAG TO−92 (TO−226) 2000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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2
BS170

RESISTIVE SWITCHING

+25 V

ton toff
Vin 125 W TO SAMPLING SCOPE
50 W INPUT
PULSE GENERATOR 20 dB
Vout 90%
40 pF 50 W ATTENUATOR
OUTPUT 10%
50 W V
INVERTED out
50 W 1.0 MW
90%
10% 50%
INPUT Vin
PULSE
(Vin Amplitude 10 Volts) WIDTH

Figure 1. Switching Test Circuit Figure 2. Switching Waveforms

2.0 2.0

VDS = VGS VGS = 10 V


VGS(th), THRESHOLD VOLTAGE

I D(on) , DRAIN CURRENT (AMPS)


1.6 ID = 1.0 mA 1.6
9.0 V
8.0 V
1.2 1.2
7.0 V

0.8 6.0 V
0.8

5.0 V
0.4 0.4
4.0 V
0
50 0 50 100 150 0 1.0 2.0 3.0 4.0
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 3. VGS(th) Normalized versus Temperature Figure 4. On−Region Characteristics

2.0 100
VGS = 10 V
I D(on) , DRAIN CURRENT (AMPS)

1.6 9.0 V 80 VGS = 0 V


C, CAPACITANCE (pF)

8.0 V
1.2 60

7.0 V
0.8 40
6.0 V
Ciss
0.4 5.0 V 20
Coss
4.0 V
Crss
0 10 20 30 40 0 10 20 30 40 50 60
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 5. Output Characteristics Figure 6. Capacitance versus


Drain−To−Source Voltage

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3
BS170

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
BULK PACK 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

NOTES:
A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER
R
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
MILLIMETERS
SEATING
PLANE K DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54 STYLE 30:
D G 2.40 2.80 PIN 1. DRAIN
X X J 0.39 0.50 2. GATE
G K 12.70 --- 3. SOURCE
J N 2.04 2.66
V P 1.50 4.00
C R 2.93 ---
V 3.43 ---
SECTION X−X
1 N

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