PROSES FABRIKASI IC CMOS

Disusun Untuk Memenuhi Tugas Mata Kuliah Perancangan IC Digital

Penulis:

Ihsan Miftahussalam 062001700507

Dosen Pengajar:
Prof. Dr. Ir. Engelin Shintadewi J., MT

TEKNIK ELEKTRO
FAKULTAS TEKNOLOGI INDUSTRI
UNIVERSITAS TRISAKTI
2019
PROSES FABRIKASI IC CMOS

Gambar dibawah menunjuan suatu cross section dan tampak atas dari wafer sebagai
suatu proses fabrikasi yand di proses mulai dari bare silicon sampai dengan complete circuit
[1].

1. Alignment Mark Etch

2. N-Well Lithography

3. Well Drive –in

4. LOCOS Nitride, Active Area Lythography, and Etch

5. Channel Stop Implant and Field Oxidation

6. Nitride Removal and Threshold Adjust Implant

7. Gate Oxidation

8. Polysilicon Deposition and Blanket Implant

9. Polysilicon Gate Lithography and Etch

10. N-Select Lithography and Implant

11. P-Select Lithography and Implant

12. Implant Activation

13. Interlevel Dielectric Deposition

14. Contact Lithograpy and Etch

15. Metal Deposition, Lithography, and Etch

16. Finished Integrated Circuit

 17. Overglass Deposition Lithography and Etch

CHIPS LAYOUT

DAFTAR PUSTAKA

[1] Greg Snider. Lab Procedure. Topic : “IC Fabrication”.2015