RFMD Lands Band Amps WP

AN RFMD® WHITE PAPER
RFMD.
®
Compact L- and S-Band GaN High

Power Amplifiers
Dave Aichele, David W. Runton, Zoran Anusic, and Eric Schonthal
Key Concepts Discussed:
• Advantages and disadvantages of competing power amplifier technologies for radar applications.
• GaN power amplifiers are shaping the future of radar.
• Specific GaN solutions in production and proposed.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective
owners. ©2009, RF Micro Devices, Inc.
WP101015 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical 1 of 12

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Compact L- and S-Band GaN High Power Amplifiers
Contents
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Advancements in Radars . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Industry Standard Power Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
VED Amplifiers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
GaAs Amplifiers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Si Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
The Wave of the Future: GaN Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
RFMD Focuses GaN for Radar Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
RF3928: 300W at S-Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
RFHA1020: 350W at L-Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
RFHA1023: 250W at L-Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Appendix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
WP101015 2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
List of Figures
Figure 1. Long Range Surveillance L-Band Phase Array Radar . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 2. Radar Amplifier Technology Adoption Projections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Compact S-Band GaN HPA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. RF3928 RF Performance from 2.7GHz to 3.5GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 5. RFHA1020 RF Performance from 1200MHz to 1400MHz . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 6. RFHA1023 RF Performance from 1200MHz to 1400MHz . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 7. HPA Design Topology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 8. GaN Model Source Pull, Load Pull . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 9. Design NLM Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 10. Compact L-Band GaN HPA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 11. Pulsed RF Measurements and Affects of Pulse Width and Duty Cycle . . . . . . . . . . . . . . . 11
Figure 12. RFMD’s MicroShield Integrated RF Shielding Technology . . . . . . . . . . . . . . . . . . . . . . . . . 12
WP101015
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical 3 of 12
Introduction 1. Sensitivity:
Sensitivity is the essence of radar. Systems demon-
Civilian and military radar systems rely on amplifiers to
strating improved detect and monitor capabilities,
deliver pulsed and continuous wave power ranging from
capturing small, previously indistinguishable
mere watts, to hundreds of kilowatts for microwave and
objects, are replacing older technology.
millimeter frequencies. Radar use varies greatly because
2. Electronically Scanned Arrays:
it can identify the range, altitude, direction, or speed of
Mechanically scanned antennas are being sup-
both moving and fixed objects such as ships, spacecraft,
planted with electronically driven antennas which
guided missiles, motor vehicles, terrain, and weather.
demonstrate improvements in performance and reli-
Civilian uses include meteorological precipitation
ability.
monitoring, radar astronomy, ground-penetrating
3. Image enhancement:
geological observation, and high-resolution imaging. In
Advancements in computer processing and trans-
military applications, radar is used in ground-penetrating,
mit/receive technologies allow newer radar systems
ground/air surveillance, target tracking, rendezvous
to generate higher resolution images.
systems, air-defense systems, antimissile systems, and
4. Energy efficiency and increased power:
fire control.
Reducing size and weight of complex radar systems
Figure 1. Long Range Surveillance L-Band Phase Array are direct results of higher efficiency and power.
Radar Smaller size and weight are critical to increasing
possible civilian and military radar applications
where they were not feasible before. These advance-
ments push radar manufacturers and component
suppliers to continue driving incumbent amplifier
technology towards power and efficiency.
Industry Standard Power Amplifiers

Current radar technology relies on conventional Vacuum
Electron Devices (VEDs), Gallium Arsenide (GaAs) and
Silicon (Si) solid state amplifiers to deliver power. Most
military and civilian radar systems operate in the following
microwave and millimeter frequencies: L-band (1GHz to
2GHz), S-band (2GHz to 4GHz), C-band (4GHz to 8GHz),
X-band (8GHz to 12GHz), ku (12GHz to 18GHz) and Ka-
band (26.5GHz to 40GHz). Power requirements vary from
single-digit watts to tens of kilowatts depending on the
amplifier used in the system. Below, technologies
providing current amplifier solutions for radar systems are
explained.
Some uses of radar cross over the civilian/military divide.
In the air, radar is used for controlling air traffic,
VED Amplifiers
anticollision systems, altimetry, and flight-control. On the
VEDs consist of Traveling Wave Tubes (TWTs), Klystrons,
sea, nautical radar is used to locate landmarks and other
Magnetrons, Gyrotrons, and Cross Field Amplifiers (CFA).
ships and for ocean-surveillance systems. In all cases, as
VEDs are capable of working from the MHz range up to
these radar technologies and their requirements
hundreds of GHz and vary in power from watts to
advance, designers are seeking out next generation
hundreds of kilowatts. VED technology is 70 years-old,
amplifiers that offer advantages in power, bandwidth, and
however, and VEDs are complex to manufacture requiring
efficiency over conventional technology.
unique materials and skill sets. VED market share is
Advancements in Radars susceptible to next generation technologies that offer
comparable power levels at target frequencies with
Manufacturers continue to make advancements to radar
robust solid state reliability.
systems to meet the requirements of their customers and
their environments and conditions. Several recent
advancements include:
WP101015 4 of 12
GaAs Amplifiers Si Amplifiers

GaAs amplifiers are used as pre-drivers, drivers, and final Silicon amplifiers typically consist of silicon bipolar and
stage amplifiers for radar systems that require high Laterally Diffused Metal Oxide Semiconductor (LDMOS)
efficiency while operating in microwave and millimeter technologies. These technologies are best known to
frequencies. GaAs amplifiers operate in the 5V to 28V operate at 28V, with new improvements up to 50V. This
range. Power density limitations require either combining technology works well in VHF and UHF frequency ranges,
these devices, or excluding them from use in higher but can also work up to 3.5GHz. Packaged modules using
power radar applications where space limitations prohibit multiple die can offer power levels up to 1000W at 1GHz,
power combining. Advancements in alternative but typical power levels are less than 200W. The intrinsic
semiconductor technology for increased bandwidth, parasitic capacitance characteristics in this technology
power, and efficiency lure radar manufacturers away from limit the bandwidth performance and power capabilities.
GaAs amplifiers. This inherently limits potential improvements to efficiency
and power handling.
Figure 2. Radar Amplifier Technology Adoption Projections
WP101015
The Wave of the Future: GaN Amplifiers power gain performance up to 6GHz. RFMD has
developed a family of high power, high efficiency,
Gallium Nitride (GaN) amplifiers are deployed in military
broadband amplifiers that are positioned for L-band, S-
radar systems where design, manufacture, and adoption
band, and C-band radar applications.
rates are increasing each year. For applications operating
in frequency bands less than 6GHz, radar manufacturers Figure 3 shows a typical RFMD solution including the
recognize that this wide-band gap technology offers partially matched power transistor, bias network, and on-
significant advantages over existing Si and VED circuit-board matching elements. The package is a
amplifiers. Advantages include higher voltage and hermetically sealed bolt-down package for optimum
broadband performance with high drain efficiency. There thermal contact. The package houses the GaN transistor
is increased GaN manufacturing activity in the U.S. and die, splitting and combining networks, matching, and
Japan toward higher frequency radar applications, (those stabilization circuitry.
greater than 10GHz), with emphasis on improvements in
bandwidth, power output, and efficiency. These higher The impedance at the package pin for the device is
frequency GaN solutions are encroaching on entrenched typically 15Ω to 25Ω. This higher impedance allows the
GaAs and VED design slots and market share. circuit board matching elements to remain compact as
shown in Figure 3. The wide-dimension, low-impedance
RFMD Focuses GaN for Radar Applications matching traces, typical in silicon-based solutions, which
GaN is relatively new to the market. Several established take up significant amounts of circuit board area, are not
RF companies have invested considerable resources to required. For radar applications requiring several devices
develop a robust, reliable GaN semiconductor technology combined in parallel to achieve multi-kilowatt amplifiers,
targeting multiple markets. The pulsed and CW the cost benefits of module size reduction alone
performance from GaN radar systems are ideally suited represent a significant advantage. Indeed, equivalent
for both civilian and military applications. First generation silicon-based solutions may have a footprint 10 times
RFMD GaN technology was released as a 50V process larger.
with power density greater than 5W/mm and respectable
Figure 3. Compact S-Band GaN HPA
WP101015 6 of 12
RF3928: 300W at S-Band performance for the RF3928 covering the full 2.7GHz to
RFMD’s RF3928 was designed for operation from 3GHz 3.5GHz band. This broadband performance represents
to 3.5GHz and provides over 300W of pulsed peak power, fixed circuit board tuning with no adjustments to bias or
with peak gain greater than 9dB and peak drain tuning component changes.
efficiency of 46% to 52% over that frequency range.
All measurements were taken under pulsed conditions
Previously RFMD has shown that this amplifier topology is using a 100μsec pulse at 10% duty cycle. Power droop
very flexible and can achieve wide bandwidth (25% across the pulse width is typically 0.2dB indicating that
bandwidth) while providing high-output power and the thermal properties of the GaN device and package
efficient operation. Figure 4 presents board tuned are not limiting performance.
Figure 4. RF3928 RF Performance from 2.7GHz to 3.5GHz
RF3928 Gain/Efficiency vs. Frequency, Pout = 54.5dBm

(Pulsed 10% duty cycle, 100uS, Vd = 50V, Idq = 440mA)
16 56
15 Fixed tuned test circuit Gain Eff 54
14 52
Drain Effficiency (%)

13 50
12 48
Gain (dB)
11 46
10 44
9 42
8 40
7 38
6 36
2700 2800 2900 3000 3100 3200 3300 3400 3500
Frequency (MHz)
Figure 5. RFHA1020 RF Performance from 1200MHz to 1400MHz
RFHA1020 Gain/Efficiency vs. Frequency, Pout = 55.4dBm

(Pulsed 10% duty cycle, 100uS, Vd = 50V, Idq = 440mA)
18 66
17 Fixed tuned test circuit 64
16 62
15 60
14 58
13 56
Gain (dB)
12 54
11 52
10 50
9 48
8 Gain Eﬀ 46
7 44
6 42
1200 1220 1240 1260 1280 1300 1320 1340 1360 1380 1400
Frequency (MHz)
WP101015
RFHA1020: 350W at L-Band Summary

RFMD has developed the RFHA1020 to provide high
RFMD has developed a portfolio of high power matched
power at L-band frequencies. This part uses the same
amplifier products to provide solutions for next generation
circuit topology and package as the RF3928, but provides military and civilian radar applications. Wide bandwidth,
high power performance from 0.9GHz to 1.4GHz,
high output power, and high efficiency operation enable
optimized from 1.2GHz to 1.4GHz (performance
simplification of high-power radar system modules.
evaluation is included in Figure 5). Design using GaN devices allows for multiple bands to be
covered by a single matched design, reducing size and
RFHA1020 provides high-output power from 0.9GHz to
1.4GHz and output power greater than 300W over the complexity of the overall multi-kilowatt amplifier. The
resulting designs allow for tighter integration through
entire frequency band, while optimized output power of
smaller system footprints and reduced cooling needs,
350W is achieved from 1.2GHz to 1.4GHz. Power gain
ranges from 13.6dB to 15.5dB, and peak drain efficiency which leads to enhanced device efficiency and lower
operational costs.
ranges from 50% to 63%.
RFHA1023: 250W at L-Band

RFMD’s RFHA1023 provides a lower power output
solution at L-band operating at 36V. This part
incorporates in package pre-matching in a bolt down high-
thermal conductivity solution.
Figure 6 provides measured data on the performance of

this part under the same pulsed conditions previously
discussed. The RFHA1023 achieves 250W peak output
power over the same 1.2GHz to 1.4GHz, 15% bandwidth,
while maintaining greater than 13dB gain at peak power.
Peak drain efficiency ranges from 52% to 64% and small
signal gain exceeds 14dB with power gain ranging from
13.2dB to 14.6dB at 250W output power.
Figure 6. RFHA1023 RF Performance from 1200MHz to 1400MHz
RFHA1023 Gain/Efficiency vs. Frequency, Pout = 54dBm

(Pulsed 10% duty cylce, 1mS, Vd = 36V, Idq = 440mA)
18 68
17 Fixed tuned test circuit 66
16 64
15 62
14 60
Gain (dB)
13 58
12 56
11 54
10 Gain Eﬀ 52
9 50
8 48
1200 1220 1240 1260 1280 1300 1320 1340 1360 1380 1400
Frequency (MHz)
WP101015 8 of 12
Appendix
Figure 7. HPA Design Topology
λ
 Wilkinson combiners at input and output of λ
devices, 50Ω impedance at the package leads λ Ω
 Two stage quarter-wave impedance
Ω
transformation for broader bandwidth
 High dielectric substrates for impedance
transformation to present optimum load / source
impedance to device
 Isolation resistors to prevent odd-mode
oscillations
Figure 8. GaN Model Source Pull, Load Pull
Source (5ohm chart) 1.2GHz to 1.4GHz Load (5ohm chart) 1.2GHz

1 2GHz to 1.4GHz
1 4GHz
Gain 30dBm 20 cell 5ohm Pout Eff 35dBm 5ohm 20cell SrcB HIGH
1.0
Swp Max
1.0
Swp Max
0.8
1.2e+009
0.8
1.4e+009 1.4e+009
r 1.28968 Ohm
6
p1: Freq = 0.9 GHz

6
0.
0.
0
x 0.725037 Ohm Stability = 1

2.
p1: Freq = 0.9 GHz

2.
Stability Index = 1
4 4 1.4e+009
0.
p1 0 0.
r 3.60116
3 60116 Ohm
3. 3.
0
p2 0
x 1.10298 Ohm
p3 4. 4.
0
5.0 5.0
0. 2 0.2
10.0 10.0
p2: Freq = 1.2 GHz

10.0
10.0
0.2
0.4
0.6
1.0
2.0
3.0
4.0
5.0
0.8
0.2
0.4
1.0
3.0
4.0
5.0
0.6
0.8
2.0
Stability = 1
0
p2: Freq = 1 1.2

2 GHz
Stability Index = 1
-10.0 -10.0
9e+008
2 2
r 0.361034
-0 . Ohm 0 -0.
1.2e+009
0
- 5. -5.
x 0.343082 Ohm 0 .0
-4
.
r 3.41804 Ohm -4
.0 x -0.976928 Ohm .0
-3 -3
.4 .4
-0 p3: Freq = 1.4 GHz -0
S bili = 1
Stability LPCS(56,54,0.5)
LPCS(56 54 0 5) LPCS(53,52,0.5)
LPCS(53 52 0 5)
.0
0
Pout 0p9 35 20 cell SrcB 2 Pout 1p4 35 20cell SrcB 2

2.
-2
.6
.6
p3: Freq = 1.4 GHz

-0
-0
LPCS(55,45,5) LPCS(45,35,5)
-0.8
-0.8
Swp Min Swp Min Stability Index = 1

-1.0
Eff 0p9 35 20 cell SrcB 2 Eff 1p4 35 20 cell Src B 2

-1.0
9e+008 9e+008
LPCS(54,53,0.5) SCIR2()
LPCS(24,20,1) LPCS(22,18,1) SCIR1() Pout 1p2 35 20 cell SrcB 2 Stability 20 cell 5ohm
Gain 0p9 30dbm Gain 1p4 30dbm Stability 20 cell 5ohm
LPCS(23,19,1) S(1,1) LPCS(50,40,5) S(2,2)
Gain 1p1 30dBm Lowband 1p2GHz at dev Z 5ohm low band Eff 1p2 35 20cell SrcB 2 Lowband 1p2GHz at dev Z 5ohm high band
red – input circuit, green - stability Pink – output circuit, grey - stability
• GaN Non Linear Model (NLM) used to generate source and load contours
• Source contours generated for Pin = +10dBm
• Load contours generated for Pin = +41dBm
WP101015
Figure 9. Design NLM Simulation
• EM simulation used to design splitter/combiner networks

• GaN Non Linear Model (NLM) used to estimate RF performance over
frequency
• Ideal bias networks (lossless
(lossless, broadband) used for simulation
• NLM provides isothermal results (short pulse)
Figure 10. Compact L-Band GaN HPA
Compact application circuit for L-band 350W solution: 2” x 2”
WP101015 10 of 12
Figure 11. Pulsed RF Measurements and Affects of Pulse Width and Duty Cycle
μ μ
WP101015
Figure 12. RFMD’s MicroShield Integrated RF Shielding Technology
 Demonstrated a compact 350W L-band power amplifier

 Design completed using non linear model results exclusively
 Package matched to 25 Ω at the input and output lead
 Application real estate including bias networks and occupies a 2 inch by 2 inch area
 Optimized for 1.2GHz to 1.4GHz, but can operate with 31% bandwidth
 For long pulse widths and duty cycles 0.4dB to 0.6dB drop in peak power performance
1.2GHz to 1.4GHz (200MHz, 15% bandwidth)
•Peak Pout 350W
•Peak efficiency 52% to 64%
•Gain at peak power 13.5dB to 15.5dB
•Linear gain 14.5dB to 16.0dB
WP101015 12 of 12

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AN RFMD® WHITE PAPER

Compact L- and S-Band GaN High

Dave Aichele, David W. Runton, Zoran Anusic, and Eric Schonthal

Key Concepts Discussed:

WP101015 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical 1 of 12

Industry Standard Power Amplifiers

GaAs Amplifiers Si Amplifiers

Figure 2. Radar Amplifier Technology Adoption Projections

Figure 3. Compact S-Band GaN HPA

Figure 4. RF3928 RF Performance from 2.7GHz to 3.5GHz

RF3928 Gain/Efficiency vs. Frequency, Pout = 54.5dBm

15 Fixed tuned test circuit Gain Eff 54

Drain Effficiency (%)

Figure 5. RFHA1020 RF Performance from 1200MHz to 1400MHz

RFHA1020 Gain/Efficiency vs. Frequency, Pout = 55.4dBm

17 Fixed tuned test circuit 64

RFHA1020: 350W at L-Band Summary

RFHA1023: 250W at L-Band

Figure 6 provides measured data on the performance of

Figure 6. RFHA1023 RF Performance from 1200MHz to 1400MHz

RFHA1023 Gain/Efficiency vs. Frequency, Pout = 54dBm

17 Fixed tuned test circuit 66

Figure 7. HPA Design Topology

Figure 8. GaN Model Source Pull, Load Pull

Source (5ohm chart) 1.2GHz to 1.4GHz Load (5ohm chart) 1.2GHz

p1: Freq = 0.9 GHz

x 0.725037 Ohm Stability = 1

p1: Freq = 0.9 GHz

p2: Freq = 1.2 GHz

p2: Freq = 1 1.2

Pout 0p9 35 20 cell SrcB 2 Pout 1p4 35 20cell SrcB 2

p3: Freq = 1.4 GHz

Swp Min Swp Min Stability Index = 1

Eff 0p9 35 20 cell SrcB 2 Eff 1p4 35 20 cell Src B 2

Figure 9. Design NLM Simulation

• EM simulation used to design splitter/combiner networks

Figure 10. Compact L-Band GaN HPA

Compact application circuit for L-band 350W solution: 2” x 2”

Figure 12. RFMD’s MicroShield Integrated RF Shielding Technology

 Demonstrated a compact 350W L-band power amplifier

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