Pro-electron code (JIS) The first letter indicates the material: A = Ge SA: PNP HF transistor B = Si SB: PNP AF transistor C = GaAs SC: NPN HF transistor R = compound materials. SD: NPN AF transistor (Most common type is B.) SE: Diodes SF: Thyristors The second letter indicates the device SG: Gunn devices application: SH: UJT A: Diode RF SJ: P-channel FET/MOSFET B: Variac SK: N-channel FET/MOSFET C: transistor, AF, small signal SM: Triac D: transistor, AF, power SQ: LED E: Tunnel diode SR: Rectifier F: transistor, HF, small signal SS: Signal diodes K: Hall effect device ST: Avalanche diodes L: Transistor, HF, power SV: Varicaps N: Optocoupler SZ: Zener diodes P: Radiation sensitive device Q: Radiation producing device A = low gain R: Thyristor, Low power B = medium gain T: Thyristor, Power C = high gain U: Transistor, power, switching No suffix = ungrouped (any gain) Y: Rectifier Z: Zener, or voltage regulator diode