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IRG4BC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
C
Features VCES = 600V
• UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in VCE(on) typ. = 2.15V
resonant mode
• Generation 4 IGBT design provides tighter G
parameter distribution and higher efficiency than @VGE = 15V, IC = 5.0A
previous Generation E
• IGBT co-packaged with HEXFREDTM ultrafast, n-cha nn el tf (typ.) = 140ns
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing TO-220AB
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT — — 3.3
RθJC Junction-to-Case - Diode — — 7.0 °C/W
RθCS Case-to-Sink, flat, greased surface — 0.50 —
RθJA Junction-to-Ambient, typical socket mount — — 80
Wt Weight — 2 (0.07) — g (oz)
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IRG4BC10UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.15 2.6 IC = 5.0A VGE = 15V
— 2.61 — V IC = 8.5A See Fig. 2, 5
— 2.30 — IC = 5.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th) /∆TJ Temperature Coeff. of Threshold Voltage — -8.7 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 2.8 4.2 — S VCE = 100V, IC = 5.0A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
V FM Diode Forward Voltage Drop — 1.5 1.8 V IC = 4.0A See Fig. 13
— 1.4 1.7 IC = 4.0A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
5 P o w e r D is s ip a tio n = 9.2 W
4 S q u a re w a v e :
6 0% of rate d
volta ge
3
Id e a l d io d e s
1
0
0.1 1 10 100
f, Frequency (KHz)
100 100
I C , Collector-to-Emitter Current (A)
TJ = 25 oC
TJ = 150 oC
10
10
TJ = 150 o C
TJ = 25 o C
0.1
V GE = 15V
20µs PULSE WIDTH
1
V = 50V
CC
5µs PULSE WIDTH
1 10 5 6 7 8 9 10 11 12 13 14
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)
8
I C = 10 A
4.0
3.0
I C = 5.05 A
4
I C = 2.5 A
2.0
2
0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature
10
Thermal Response (Z thJC )
D = 0.50
1
0.20
0.10
0.05
0.02 P DM
0.1 0.01
SINGLE PULSE
(THERMAL RESPONSE) t1
t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
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IRG4BC10UD
500
20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 5.0A
Cres = Cgc
300
Cies 12
200 8
100
C
oes 4
Cres
0 0
1 10 100 0 4 8 12 16
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)
0.30 10
V CC = 480V 100 Ω
RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V
I C = 5.0A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
IC = 10 A
1
I
C = 5.0A
5A
0.25
IC = 2.5 A
0.1
0.20 0.01
50 60 70 80 90 100 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG R, GGate
, Gate Resistance(Ohm)
Resistance (Ω) TJ , Junction Temperature ( °C )
Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4BC10UD
1.4 100
RG = 100Ω
Ohm VGE = 20V
TJ = 150 ° C T J = 125 oC
1.0
0.8
10
0.6
0.4
0.2
10 TJ = 150°C
TJ = 125°C
T = 25°C
J
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
FForward
orward VVoltage
oltage DDrop
rop -- VVFM
F M((V
V) )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4BC10UD
50 14
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
I F = 8.0A 12
45
I F = 4.0A
I F = 8.0A
10
40 I F = 4.0A
trr- (nC)
Irr- ( A)
8
35
30
4
25
VR = 2 00 V 2
T J = 1 2 5°C
T J = 2 5 °C
20 0
100 1000 100 1000
di f /dt - (A/µ s) di f /dt - (A/µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
200 1000
VR = 2 00 V VR = 20 0V
T J = 1 25°C T J = 1 25 °C
T J = 2 5°C T J = 2 5°C
160
I F = 8.0A I F = 8.0A
di (rec) M/dt- (A /µs)
I F = 4.0A
I F = 4.0A
120
Qrr- (nC)
80
40
A
0 100
100 1000 100 1000
di f /dt - (A/µ s) di f /dt - (A/µ s )
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
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IRG4BC10UD
90% Vge
Same ty pe
device as +Vge
D .U.T.
Vce
430µF
80%
of Vce D .U .T. 9 0 % Ic
10% Vce
Ic Ic
5 % Ic
td (o ff) tf
∫
t1 + 5 µ S
Eoff = Vce
V c e icIcd tdt
Fig. 18a - Test Circuit for Measurement of
t1
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
∫
trr
G A T E V O L T A G E D .U .T . trr
Ic
Q rr = Ic ddt
id t
tx
1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr
∫
t2
E o n = VVce
ce ieIc
d t dt
∫
t4
t1 E re c = VVd
d idIc
d t dt
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY
t3 t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr
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IRG4BC10UD
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R EN T D .U .T .
V O L T A G E IN D .U .T .
C U R R EN T IN D 1
t0 t1 t2
L D.U.T. 480V
RL=
4 X I C @25°C
1000V Vc*
0 - 480V
50V
6000µ F
100 V
Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit
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IRG4BC10UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG = 100Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/