2SK3019

Transistor

2.5V Drive Nch MOS FET

2SK3019

zStructure zDimensions (Unit : mm)

Silicon N-channel EMT3
MOSFET
1.6 0.7
0.3 0.55

(3)

zApplications

0.8

1.6
(2) (1)
Interfacing, switching (30V, 100mA)

0.1Min.
0.2 0.2
0.15
0.5 0.5
1.0

(1)Source
zFeatures (2)Gate
1) Low on-resistance. (3)Drain Abbreviated symbol : KN

2) Fast switching speed.

3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.

zPackaging specifications zEquivalent circuit

Package Taping Drain

Code TL
Type
Basic ordering unit
(pieces) 3000

2SK3019
Gate

zAbsolute maximum ratings (Ta=25°C) ∗ Gate

Protection
Parameter Symbol Limits Unit Diode
Source

Drain-source voltage VDSS 30 V

Gate-source voltage VGSS ±20 V
∗A protection diode is included between the gate
Continuous ID ±100 mA and the source terminals to protect the diode
Drain current against static electricity when the product is in use.
Pulsed IDP∗ 1
±400 mA Use a protection circuit when the fixed voltages
are exceeded.
Total power dissipation PD∗2 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.

zThermal resistance
Parameter Symbol Limits Unit
Channel to ambient Rth(ch-a) ∗ 833 °C / W
∗ With each pin mounted on the recommended lands.

Rev.C 1/3
 2SK3019
Transistor

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS − − ±1 µA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 30 − − V ID=10µA, VGS=0V
Zero gate voltage drain current IDSS − − 1.0 µA VDS=30V, VGS=0V
Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS=3V, ID=100µA
Static drain-source on-state RDS(on) − 5 8 Ω ID=10mA, VGS=4V
resistance RDS(on) − 7 13 Ω ID=1mA, VGS=2.5V
Forward transfer admittance |Yfs| 20 − − ms ID=10mA, VDS=3V
Input capacitance Ciss − 13 − pF VDS=5V
Output capacitance Coss − 9 − pF VGS=0V
Reverse transfer capacitance Crss − 4 − pF f=1MHz
Turn-on delay time td(on) − 15 − ns ID=10mA, VDD 5V
Rise time tr − 35 − ns VGS=5V
Turn-off delay time td(off) − 80 − ns RL=500Ω
Fall time tf − 80 − ns RG=10Ω

zElectrical characteristic curves

0.15 200m GATE THRESHOLD VOLTAGE : VGS(th) (V) 2
4V VDS=3V VDS=3V
3V 100m Pulsed ID=0.1mA
Ta=25°C Pulsed
Pulsed 50m
3.5V
DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

1.5
20m
0.1
10m
5m 1
2.5V
2m
Ta=125°C
0.05
1m 75°C
2V 25°C 0.5
0.5m
−25°C
0.2m
VGS=1.5V
0 0.1m 0
0 1 2 3 4 5 0 1 2 3 4 −50 −25 0 25 50 75 100 125 150
DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (°C)

Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs.
channel temperature

50 50 15
VGS=4V VGS=2.5V Ta=25°C
Pulsed Ta=125°C Pulsed Pulsed
ON-STATE RESISTANCE : RDS(on) (Ω)

ON-STATE RESISTANCE : RDS(on) (Ω)

ON-STATE RESISTANCE : RDS(on) (Ω)

Ta=125°C 75°C
20 20 25°C
75°C
−25°C
25°C
10 10 10
−25°C
STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE
STATIC DRAIN-SOURCE

5 5

2 5
2 ID=0.1A

1 1 ID=0.05A

0.5 0.5 0
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 5 10 15 20
DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Static drain-source on-state Fig.5 Static drain-source on-state Fig.6 Static drain-source
resistance vs. drain current (Ι) resistance vs. drain current (ΙΙ) on-state resistance vs.
gate-source voltage

Rev.C 2/3
 2SK3019
Transistor

9 0.5 200m
VGS=4V VDS=3V VGS=0V

REVERSE DRAIN CURRENT : IDR (A)

ON-STATE RESISTANCE : RDS(on) (Ω)

8 Pulsed Pulsed 100m Pulsed

0.2
7 Ta=−25°C 50m

FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
ID=100mA 0.1 25°C
75°C 20m
6
0.05 Ta=125°C
STATIC DRAIN-SOURCE

ID=50mA 125°C 10m

5 75°C
5m 25°C
0.02
4 −25°C
0.01 2m
3
1m
0.005
2 0.5m
1 0.002 0.2m
0 0.001 0.1m
−50 −25 0 25 50 75 100 125 150 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5
CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.7 Static drain-source on-state Fig.8 Forward transfer Fig.9 Reverse drain current vs.
resistance vs. channel admittance vs. drain current source-drain voltage (Ι)
temperature

200m 50 1000
Ta=25°C Ta=25°C Ta=25°C
REVERSE DRAIN CURRENT : IDR (A)

tf
100m Pulsed f=1MHZ 500 VDD=5V
VGS=0V td(off) VGS=5V
50m 20 RG=10Ω
200

SWITHING TIME : t (ns)

Ciss Pulsed
CAPACITANCE : C (pF)

20m
10 100
10m VGS=4V 0V
5m 5 50
Coss
tr
2m 20
Crss td(on)
1m 2
10
0.5m
1 5
0.2m
0.1m 0.5 2
0 0.5 1 1.5 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 100
SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA)

Fig.10 Reverse drain current vs. Fig.11 Typical capacitance vs. Fig.12 Switching characteristics
source-drain voltage (ΙΙ) drain-source voltage (See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)

zSwitching characteristics measurement circuit

Pulse width

90%
VGS 50% 50%
ID VGS
VDS 10%
D.U.T. RL
RG VDS 10% 10%
VDD
90%
90%
td (on) tr tf
td (off)
ton toff

Fig.13 Switching time measurement circuit Fig.14 Switching time waveforms

Rev.C 3/3
 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.

6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.

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the recommended usage conditions and specifications contained herein.

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