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Features
• 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
TO-220F
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching D
performance, and withstand high energy pulse in the !
!
S
Thermal Characteristics
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 4.46 °CW
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °CW
2014-6-17 1 www.kersemi.com
KSMF2N60
Electrical CharacteristicsT C = 25°C unless otherwise noted
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.4 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 600 V, VGS = 0 V -- -- 10 µA
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 0.8 A -- 3.7 4.7 Ω
On-Resistance
gFS Forward Transconductance VDS = 50 V, ID = 0.8 A (Note 4) -- 2.0 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 270 350 pF
Coss Output Capacitance f = 1.0 MHz -- 40 50 pF
Crss Reverse Transfer Capacitance -- 5 7 pF
Switching Characteristics
td(on) Turn-On Delay Time -- 10 30 ns
VDD = 300 V, ID = 2.4 A,
tr Turn-On Rise Time -- 25 60 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 20 50 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 25 60 ns
Qg Total Gate Charge VDS = 480 V, ID = 2.4 A, -- 9.0 11 nC
Qgs Gate-Source Charge VGS = 10 V -- 1.6 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 4.3 -- nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 100mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
2014-6-17 2 www.kersemi.com
KSMF2N60
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
0 6.0 V
10
Bottom : 5.5 V
0
10
25
-55
-1
10
Notes : Notes :
1. 250s Pulse Test 1. VDS = 50V
2. TC = 25 2. 250s Pulse Test
-2 -1
10 10
-1 0 1
10 10 10 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]
12
10 VGS = 10V
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
VGS = 20V
8
RDS(ON) [ ],
0
10
6
4
150 25
Notes :
2 1. VGS = 0V
Note : TJ = 25 2. 250s Pulse Test
0 -1
0 1 2 3 4 5 6 10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]
500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 120V
10 VDS = 300V
400
VGS , Gate-Source Voltage [V]
300
Coss
6
200
Notes : 4
1. VGS = 0 V
Crss 2. f = 1 MHz
100 2
Note : ID = 2.4A
0 0
-1 0 1 0 2 4 6 8 10
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
2014-6-17 3 www.kersemi.com
KSMF2N60
Typical Characteristics (Continued)
1.2 3.0
2.5
Drain-Source Breakdown Voltage
1.1
Drain-Source On-Resistance
BV DSS , (Normalized)
RDS(ON) , (Normalized)
2.0
1.0 1.5
1.0
0.9 Notes :
1. VGS = 0 V
Notes :
2. ID = 250 A 0.5 1. VGS = 10 V
2. ID = 1.2 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
1.8
100 µs
1 ms 1.2
ID, Drain Current [A]
ID, Drain Current [A]
10 ms
0
10
100 ms
0.9
DC
0.6
-1
10
Notes :
o
1. TC = 25 C 0.3
o
2. TJ = 150 C
3. Single Pulse
-2
10 0.0
0 1 2 3
10 10 10 10 25 50 75 100 125 150
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
( t) , T h e r m a l R e s p o n s e
D = 0 .5
0
10 0 .2
N o te s :
0 .1 1 . Z J C ( t ) = 4 . 4 6 /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
0 .0 5 3 . T J M - T C = P D M * Z J C( t )
-1 0 .0 2
10
0 .0 1 PDM
JC
t1
t2
Z
s in g le p u ls e
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
2014-6-17 4 www.kersemi.com
KSMF2N60
Gate Charge Test Circuit & Waveform
VGS
Same Type
50K
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
Charge
RL VDS
VDS 90%
VGS VDD
RG
10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off
L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)
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KSMF2N60
DUT +
VDS
I SD
L
Driver
RG
Same Type
as DUT VDD
IRM
VSD VDD
Body Diode
Forward Voltage Drop
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KSMF2N60
TO-220F
3.30 ±0.10
6.68 ±0.20
15.87 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47
9.75 ±0.30
0.80 ±0.10
(3
0°
)
#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20
9.40 ±0.20
2014-6-17 7 www.kersemi.com