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To control reflections, the impedance of integrated circuit output pad drivers
must be matched to the impedance of the transmission lines to which the pads
are connected. HP’s HSTL (high-speed transceiver logic) controlled impedance
I/O pads use an on-chip impedance matching network that compensates for
process, voltage, and temperature (PVT) variations.
T ransmission line reflections are one of the major factors limiting high-
speed I/O performance. These reflections can be controlled by matching the
driver output impedance to that of the transmission line. Traditional solutions
require the use of off-chip components to implement matching termination
networks. This adversely impacts board density, reliability, and cost.
Integration of the termination network on-chip removes these negative
attributes while providing additional advantages.
Figure 1
Single-ended output driver.
VDD
RPROG
VDDQ
W 32X
W 16X
PPU
RESD
PPD
W 4X
W 2X
GND W X
PROG[0]
PROG[1]
PROG[2]
PROG[3]
PROG[4]
PROG[5]
PROG[5:0]
VDD
RPROG
W 32X
VDDQ
W 16X
CAL
VPAD
PRE W 8X POST
RESD
W 4X
REXT
W 2X
W X
PROG[0]
PROG[1]
PROG[2]
PROG[3]
PROG[4]
PROG[5]
PROG[5:0]
PROG[5]
PROG[4]
PROG[3]
Up/Down UP/DOWN_N –
PROG[2] Counter +
PROG[1] VDDQ
PROG[0]
CLK R
VDDQ/2
CLK
GND
VPAD serves as an input to the inverting terminal of the calibration word is used by the calibration circuitry’s pro-
differential amplifier. The noninverting terminal’s input grammable resistor and distributed to other HSTL driver
voltage is VDDQ/2. This reference voltage is generated programmable resistors. Incremental binary changes in
on-chip via a voltage divider. Any difference between the PROG[5:0] cause incremental resistance changes in the
input voltages of the differential amplifier is perceived as programmable resistor. Because RPROG is now program-
a resistance mismatch between Ro and REXT. The DV med to a new value, VPAD obtains a new analog value.
causes the differential amplifier’s output to program an VPAD again acts as an input to the differential amplifier
up/down counter to increment or decrement its six-bit and the impedance matching process starts over. The cali-
output. Upon receiving a clock edge, the up/down bration action is continuous and transparent to normal
counter drives a new six-bit binary count, PROG[5:0]. This chip operation.
VDD
RPROG
VDDQ
W 32X
W 16X
PPU
RESD
PPD
W 4X
W 2X
GND W X
PROG[0]
PROG[1]
PROG[2]
PROG[3]
PROG[4]
PROG[5]
Data Predriver
Logic
VDD
RPROG
VDDQ
W 32X
PPU_N W 16X
W 8X POST_N PAD_N
RESD
PPD_N
W 4X
W 2X
GND W X
PROG[0]
PROG[1]
PROG[2]
PROG[3]
PROG[4]
PROG[5]
PROG[5:0]
1 2
1 2 1 VSOURCE
1 2 1 VSOURCE 2 VDEST
2 VDEST
1.00 ns/div 300 mV/div 750 mV Offset 2.00 ns/div 300 mV/div 750 mV Offset
Figure 5 Figure 7
Differential waveform. Critically damped signal.
1 VDEST
2 VDEST
2 1
2 1 1 2 1 VSOURCE
2 VDEST
1.00 ns/div 300 mV/div 750 mV Offset 2.00 ns/div 300 mV/div 750 mV Offset
55
1 2 1 VSOURCE
2 VDEST
45
2.00 ns/div 300 mV/div 750 mV Offset 1.0 0.5
Driver Output Voltage Vo (Volts)
range of Vo. However, Ro changes with variations in the However, to help reduce variations in Ro, the crossover
values of VGS, VDS, and the back gate voltage of the trans- point was shifted towards the high logic level of Vo. For
fer and driver NFETs. Figure 9 shows the output resis- HSTL I/O applications, this inherent deviation in output
tance changing as the output voltage swings from 0.1V to resistance minimally affects signal integrity. For future
1.4V (10% to 90%). Figure 10 illustrates the output resis- applications, it may be worthwhile to investigate alterna-
tance as a function of the output voltage swing from a logic tive series termination schemes for tighter impedance
high to a logic low. Notice in Figure 9 that the point at matching environments.
which Ro+Zo (50W) occurs when Vo+VDDQ/2. This is
Conclusion
because the calibration circuitry tunes the programmable
resistor with the pull-up portion of the output driver at A parallel NFET array can be a simple and effective way
VDDQ/2. With proper driver width ratioing, the pull-down of controlling a driver’s output resistance. With an on-chip
driver NFET would also have Ro+50W at Vo+VDDQ/2. source series termination resistor, a chip can communi-
cate at higher frequencies and board space that would nor-
mally contain termination networks is freed. Our family of
Figure 9 HSTL pads has been proven to work at 200 MHz in large,
Ro as a function of Vo as Vo goes from a logic low to a logic complex board environments.
high.
Acknowledgments
70
The authors wish to thank Gordon Motley for his valuable
Driver Output Resistance Ro (W )
pad design and ESD advice, Rick Luebs for offering the
original design concept, Rob Martin for his technical sup-
60
port, Ron Larson and Wally Wahlen for their characteriza-
tion effort, Holly Manley for making the paper readable
and Amy Jahnke for supplying direction. We also thank
50
Gary Wetlaufer for his support.
0.5 1.0
Driver Output Voltage Vo (Volts)