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FDMC4435BZ tm
®
P-Channel Power Trench MOSFET
-30V, -18A, 20.0mΩ
Features General Description
Max rDS(on) = 20.0mΩ at VGS = -10V, ID = -8.5A This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
Max rDS(on) = 37.0mΩ at VGS = -4.5V, ID = -6.3A
been especially tailored to minimize the on-state resistance. This
Extended VGSS range (-25V) for battery applications devie is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
High performance trench technology for extremely low rDS(on)
Battery Packs.
High power and current handling capability
Applications
HBM ESD protection level >7kV typical (Note 4)
High side in DC - DC Buck Converters
100% UIL Tested
Notebook battery power management
Termination is Lead-free and RoHS Compliant
Load switch in Notebook
Bottom Top
Pin 1
S D 5 4 G
S
S
G
D 6 3 S
D 7 2 S
D
D
D 8 1 S
D D
Power 33
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 4
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
∆BVDSS Breakdown Voltage Temperature
ID = -250µA, referenced to 25°C 22 mV/°C
∆TJ Coefficient
VDS = -24V, -1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V, TJ = 125°C -100
IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.0 -1.9 -3.0 V
∆VGS(th) Gate to Source Threshold Voltage
ID = -250µA, referenced to 25°C -5.3 mV/°C
∆TJ Temperature Coefficient
VGS = -10V, ID = -8.5A 14.6 20.0
rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.3A 23.1 37.0 mΩ
VGS = -10V, ID = -8.5A, TJ = 125°C 20.7 28.0
gFS Forward Transconductance VDD = -5V, ID = -8.5A 24 S
Dynamic Characteristics
Ciss Input Capacitance 1540 2045 pF
VDS = -15V, VGS = 0V,
Coss Output Capacitance 295 395 pF
f = 1MHz
Crss Reverse Transfer Capacitance 260 385 pF
Rg Gate Resistance f = 1MHz 5.1 Ω
Switching Characteristics
td(on) Turn-On Delay Time 10 20 ns
tr Rise Time VDD = -15V, ID = -8.5A, 6 12 ns
VGS = -10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 34 55 ns
tf Fall Time 20 36 ns
Qg Total Gate Charge VGS = 0V to -10V 33 46 nC
Qg Total Gate Charge VGS = 0V to -4.5V VDD = -15V, 17 24 nC
Qgs Gate to Source Charge ID = -8.5A 5 nC
Qgd Gate to Drain “Miller” Charge 9 nC
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -27V, VGS = -10V.
4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
VGS = -3.5V
VGS = -10V 3.0
VGS = -4V
NORMALIZED
30 2.5
VGS = - 4V
2.0 VGS = -4.5V
20
1.5
VGS = -5V
10 VGS = -3.5V
PULSE DURATION = 80µs 1.0
DUTY CYCLE = 0.5%MAX VGS = -10V
0 0.5
0 1 2 3 4 0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)
1.6 60
DRAIN TO SOURCE ON-RESISTANCE
1.2 40
1.0 30 TJ = 125oC
0.8 20
TJ = 25oC
0.6 10
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)
50 50
-IS, REVERSE DRAIN CURRENT (A)
10 0.01
TJ = -55oC
TJ = 25oC
TJ = -55oC
0 0.001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
ID = -8.5A
8 Ciss
VDD = -15V
CAPACITANCE (pF)
1000
6
Coss
VDD = -10V VDD = -20V
4
Crss
100
2 f = 1MHz
VGS = 0V
0 10
0 10 20 30 40 0.1 1 10 30
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
20 40
-IAS, AVALANCHE CURRENT(A)
10 30
TJ = 25oC
20
VGS = -10V
VGS = -4.5V
10
TJ = 125oC Limited by Package
o
RθJC = 4 C/W
1 0
0.001 0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms) o
TC, CASE TEMPERATURE ( C)
-4
100 10
-Ig, GATE LEAKAGE CURRENT(A)
VDS = 0V
-ID, DRAIN CURRENT (A)
-5
10 10
100us
TJ = 125oC
1ms
-6
1 THIS AREA IS 10ms 10
LIMITED BY rDS(on) 100ms
SINGLE PULSE 1s -7
0.1 TJ = MAX RATED 10
o 10s TJ = 25oC
RθJA = 125 C/W
DC
TA = 25oC
-8
0.01 10
0.01 0.1 1 10 100 0 5 10 15 20 25 30
-VDS, DRAIN TO SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE(V)
VGS = -10V
10 SINGLE PULSE
o
RθJA = 125 C/W
o
TA = 25 C
0.5
-3 -2 -1
10 10 10 1 10 100 1000
t, PULSE WIDTH (sec)
2
DUTY CYCLE-DESCENDING ORDER
1
NORMALIZED THERMAL
D = 0.5
IMPEDANCE, ZθJA
0.2
0.1
0.05 PDM
0.02
0.1 0.01
t1
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
o
RθJA = 125 C/W PEAK TJ = PDM x ZθJA x RθJA + TA
0.01
-3 -2 -1
10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.