Sie sind auf Seite 1von 7

查询FDMC4435BZ供应商 捷多邦,专业PCB打样工厂,24小时加急出货

FDMC4435BZ P-Channel Power Trench® MOSFET


February 2008

FDMC4435BZ tm
®
P-Channel Power Trench MOSFET
-30V, -18A, 20.0mΩ
Features General Description
„ Max rDS(on) = 20.0mΩ at VGS = -10V, ID = -8.5A This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
„ Max rDS(on) = 37.0mΩ at VGS = -4.5V, ID = -6.3A
been especially tailored to minimize the on-state resistance. This
„ Extended VGSS range (-25V) for battery applications devie is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
„ High performance trench technology for extremely low rDS(on)
Battery Packs.
„ High power and current handling capability
Applications
„ HBM ESD protection level >7kV typical (Note 4)
„ High side in DC - DC Buck Converters
„ 100% UIL Tested
„ Notebook battery power management
„ Termination is Lead-free and RoHS Compliant
„ Load switch in Notebook

Bottom Top
Pin 1
S D 5 4 G
S
S
G
D 6 3 S

D 7 2 S
D
D
D 8 1 S
D D

Power 33

MOSFET Maximum Ratings TA = 25°C unless otherwise noted


Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
Drain Current -Continuous (Package limited) TC = 25°C -18
-Continuous (Silicon limited) TC = 25°C -31
ID A
-Continuous TA = 25°C (Note 1a) -8.5
-Pulsed -50
EAS Single Pulse Avalanche Energy (Note 3) 24 mJ
Power Dissipation TC = 25°C 31
PD W
Power Dissipation TA = 25°C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 4
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information


Device Marking Device Package Reel Size Tape Width Quantity
FDMC4435BZ FDMC4435BZ Power 33 13’’ 12mm 3000 units

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com


FDMC4435BZ P-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
∆BVDSS Breakdown Voltage Temperature
ID = -250µA, referenced to 25°C 22 mV/°C
∆TJ Coefficient
VDS = -24V, -1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V, TJ = 125°C -100
IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.0 -1.9 -3.0 V
∆VGS(th) Gate to Source Threshold Voltage
ID = -250µA, referenced to 25°C -5.3 mV/°C
∆TJ Temperature Coefficient
VGS = -10V, ID = -8.5A 14.6 20.0
rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.3A 23.1 37.0 mΩ
VGS = -10V, ID = -8.5A, TJ = 125°C 20.7 28.0
gFS Forward Transconductance VDD = -5V, ID = -8.5A 24 S

Dynamic Characteristics
Ciss Input Capacitance 1540 2045 pF
VDS = -15V, VGS = 0V,
Coss Output Capacitance 295 395 pF
f = 1MHz
Crss Reverse Transfer Capacitance 260 385 pF
Rg Gate Resistance f = 1MHz 5.1 Ω

Switching Characteristics
td(on) Turn-On Delay Time 10 20 ns
tr Rise Time VDD = -15V, ID = -8.5A, 6 12 ns
VGS = -10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 34 55 ns
tf Fall Time 20 36 ns
Qg Total Gate Charge VGS = 0V to -10V 33 46 nC
Qg Total Gate Charge VGS = 0V to -4.5V VDD = -15V, 17 24 nC
Qgs Gate to Source Charge ID = -8.5A 5 nC
Qgd Gate to Drain “Miller” Charge 9 nC

Drain-Source Diode Characteristics


VGS = 0V, IS = -8.5A (Note 2) 0.92 1.5
VSD Source to Drain Diode Forward Voltage V
VGS = 0V, IS = -1.9A (Note 2) 0.75 1.2
trr Reverse Recovery Time 22 ns
IF = -8.5A, di/dt = 100A/µs
Qrr Reverse Recovery Charge 11 nC
NOTES:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
.

a. 53°C/W when mounted on b. 125°C/W when mounted on a


a 1 in2 pad of 2 oz copper minimum pad of 2 oz copper

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -27V, VGS = -10V.
4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

FDMC4435BZ Rev.C 2 www.fairchildsemi.com


FDMC4435BZ P-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
50 4.0

DRAIN TO SOURCE ON-RESISTANCE


PULSE DURATION = 80µs
VGS = -4.5V 3.5 DUTY CYCLE = 0.5%MAX
40 VGS = -5V
-ID, DRAIN CURRENT (A)

VGS = -3.5V
VGS = -10V 3.0
VGS = -4V

NORMALIZED
30 2.5
VGS = - 4V
2.0 VGS = -4.5V
20
1.5
VGS = -5V
10 VGS = -3.5V
PULSE DURATION = 80µs 1.0
DUTY CYCLE = 0.5%MAX VGS = -10V
0 0.5
0 1 2 3 4 0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance


vs Drain Current and Gate Voltage

1.6 60
DRAIN TO SOURCE ON-RESISTANCE

ID = -8.5A PULSE DURATION = 80µs


VGS = -10V
SOURCE ON-RESISTANCE (mΩ)

DUTY CYCLE = 0.5%MAX


1.4 50
ID = -8.5A
rDS(on), DRAIN TO
NORMALIZED

1.2 40

1.0 30 TJ = 125oC

0.8 20
TJ = 25oC

0.6 10
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to


vs Junction Temperature Source Voltage

50 50
-IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80µs VGS = 0V


DUTY CYCLE = 0.5%MAX 10
40
-ID, DRAIN CURRENT (A)

VDS = -5V TJ = 150oC


1
30
TJ = 25oC
0.1
20
TJ = 150oC

10 0.01
TJ = -55oC
TJ = 25oC
TJ = -55oC
0 0.001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode


Forward Voltage vs Source Current

FDMC4435BZ Rev.C 3 www.fairchildsemi.com


FDMC4435BZ P-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10 10000
-VGS, GATE TO SOURCE VOLTAGE(V)

ID = -8.5A

8 Ciss
VDD = -15V

CAPACITANCE (pF)
1000
6
Coss
VDD = -10V VDD = -20V
4
Crss
100

2 f = 1MHz
VGS = 0V

0 10
0 10 20 30 40 0.1 1 10 30
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain


to Source Voltage

20 40
-IAS, AVALANCHE CURRENT(A)

-ID, DRAIN CURRENT (A)

10 30

TJ = 25oC
20
VGS = -10V

VGS = -4.5V
10
TJ = 125oC Limited by Package
o
RθJC = 4 C/W
1 0
0.001 0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms) o
TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain


Switching Capability Current vs Case Temperature

-4
100 10
-Ig, GATE LEAKAGE CURRENT(A)

VDS = 0V
-ID, DRAIN CURRENT (A)

-5
10 10
100us
TJ = 125oC
1ms
-6
1 THIS AREA IS 10ms 10
LIMITED BY rDS(on) 100ms
SINGLE PULSE 1s -7
0.1 TJ = MAX RATED 10
o 10s TJ = 25oC
RθJA = 125 C/W
DC
TA = 25oC
-8
0.01 10
0.01 0.1 1 10 100 0 5 10 15 20 25 30
-VDS, DRAIN TO SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE(V)

Figure 11. Forward Bias Safe Figure 12. Igss vs Vgss


Operating Area

FDMC4435BZ Rev.C 4 www.fairchildsemi.com


FDMC4435BZ P-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
100
P(PK), PEAK TRANSIENT POWER (W)

VGS = -10V

10 SINGLE PULSE
o
RθJA = 125 C/W
o
TA = 25 C

0.5
-3 -2 -1
10 10 10 1 10 100 1000
t, PULSE WIDTH (sec)

Figure 13. Single Pulse Maximum Power Dissipation

2
DUTY CYCLE-DESCENDING ORDER
1
NORMALIZED THERMAL

D = 0.5
IMPEDANCE, ZθJA

0.2
0.1
0.05 PDM
0.02
0.1 0.01
t1
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
o
RθJA = 125 C/W PEAK TJ = PDM x ZθJA x RθJA + TA

0.01
-3 -2 -1
10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 14. Transient Thermal Response Curve

FDMC4435BZ Rev.C 5 www.fairchildsemi.com


FDMC4435BZ P-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout

FDMC4435BZ Rev.C 6 www.fairchildsemi.com


TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
ACEx® FPS™ PDP SPM™ The Power Franchise®
Build it Now™ F-PFS™ Power-SPM™
CorePLUS™ FRFET® PowerTrench®
CorePOWER™ Global Power ResourceSM Programmable Active Droop™ TinyBoost™
CROSSVOLT™ Green FPS™ QFET® TinyBuck™
CTL™ Green FPS™ e-Series™ QS™ TinyLogic®
Current Transfer Logic™ GTO™ Quiet Series™ TINYOPTO™
EcoSPARK® IntelliMAX™ RapidConfigure™ TinyPower™
EfficentMax™ ISOPLANAR™ Saving our world, 1mW at a time™ TinyPWM™
EZSWITCH™ * MegaBuck™ SmartMax™ TinyWire™
™ MICROCOUPLER™ SMART START™ μSerDes™
MicroFET™ SPM®
®
MicroPak™ STEALTH™
Fairchild® MillerDrive™ SuperFET™ UHC®
Fairchild Semiconductor® MotionMax™ SuperSOT™-3 Ultra FRFET™
FACT Quiet Series™ Motion-SPM™ SuperSOT™-6 UniFET™
FACT® OPTOLOGIC® SuperSOT™-8 VCX™
FAST® OPTOPLANAR® SupreMOS™ VisualMax™
®
FastvCore™ SyncFET™
®
FlashWriter® *

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY


FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or device, or system whose failure to perform can be
(b) support or sustain life, and (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification Product Status Definition
This datasheet contains the design specifications for product development.
Advance Information Formative / In Design Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be published
Preliminary First Production at a later date. Fairchild Semiconductor reserves the right to make changes at
any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
No Identification Needed Full Production the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Obsolete Not In Production Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

Das könnte Ihnen auch gefallen