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1.1 INTRODUCTION
The sensors used in the cameras are mainly of two types CMOS sensing
image sensors and CCD device. The difference between the CCD and the
CMOS device is the high pixel image rate at the output. The minimum pixel
rate of the Charge coupled device is given as 1000 * 1000. In the CCD the light
energy is allowed to fall on the upper part of the CCD. When the charge from
the light is absorbed by the CCD the voltage from the one terminal of the device
shifted to the other terminal of the device. It contains a large amount of the
capacitor arrays that store the charge when it is shifted to the other terminal.
The charge at the end of the array is taken and the analog signal is produced.
Hence the light energy is converted into the analog signal. In this project the
same process is recreated such that the cost of the CCD is taken care of and the
noise characteristics are calculated. The following points are calculated for the
project.
1
1.2 HISTORICAL BACKGROUND
The charge coupled device was invented by Willard Boyle and Geroge E.
Smith at AT&T Bell Labs, United states in 1969. It was first named as “Charge
‘Bubble’ Devices” because at that time the lab was working on semiconductor
bubble memory. It can also be used as a shift register. The device was based on
the ability of the device to transfer the charge from one capacitor to another
along the surface of semiconductor. This principle of operation is also used in a
device called as bucket brigade device. It was developed in late 1960s at Philips
Research Labs. Micheal Tompsett obtained the first patent on application of the
charge coupled device.
When the first CCD is made it is used as a simple 8 bit shift register with
the IC technology. It is used as a crude eight pixel linear imaging device and to
demonstrate as a shift register. A research team led by Micheal Tompsett were
able to capture images with linear devices. Many companies picked up the
invention and began to further develop the idea of the CCD some of the
companies are Fairchild semiconductor, RCA and Texas Instruments. But, Sony
mass produced CCD for their camcorders. They invested a huge amount in the
development of the Charge coupled devices.
2
1.3 BASIC BLOCK DIAGRAM
PC Micro Latch
Controller
F – Clock
R – Clock
Analog
Op- DAC
Multiplexer
Output amp
The figure 1.3 describes the block diagram of the proposed system for the
low cost and low noise charge coupled device. The F and R clocks are the
external signals that are given to the system from Arduino or video card.
1.4 COMPONENTS
1.4.1 PC:
In the PC an image is simulated and the each pixel of the image is
converted into the binary data of 0’s and 1’s. The data of the image is
converted into a text file and is sent into the microcontroller for the
further processing of the data.
3
1.4.2 Microcontroller
In the micro controller the data from the PC is taken and it is sent to
the analog and the digital section for the further processing of the data.
It produces a 12 – bit data that is sent into a digital to analog section
so that the 12 bit digital data is converted into the analog signal.
1.4.3 Latch
The latch used in the circuit is used to store the data and then send the
data to the further section when required. In this circuit, latch is used
as a buffer. It consists 8 buffers connecting the input and output; it is
operated due to variation in the clock. The clock signal required for
the processing of the data is given by the flip flops. The flip flops get
an F – Clock signal from the external pin. Latch is used to reduce the
delay in the circuit. As the micro controller cannot send the data when
we require it, a latch is used so that it stored the data and sends it when
required.
1.4.4 Op Amp
The operational amplifier is used to limit the output data to a certain
bandwidth according to the rise time or the settling time of the output
signal. It is also used to limit the noise of the output signal to less than
20μV rms by limiting the bandwidth of the signal.
4
CHAPTER 2
LITERATURE REVIEW
2.1 INTRODUCTION
The image sensors are becoming an essential part of today’s cameras as they
offer advantages such as low noise and high pixel rate of the image. One of
such sensors in Charge coupled device and it used for various applications,
to detect the altitude of the satellite, to improve the pixel rate in the image in
digital cameras, optical scanners as light sensing devices, it is also used in
astrophotography.
They are very sensitive to the infrared rays, which allows photography in
infrared, it is also used as a main component in the night vision devices and
also in the zero lux of the video recording and photography. While
purchasing a CCD the parameters that is taken into consideration are array
size of the capacitors, the highest pixel size that can be produced by the
CCD, Intercede dynamic range of total values of the brightest light level,
Dark noise produced by the device, Full well capacity, Quantum effiency.
5
2.2 RELATED WORK
1. M. S. Robbis, Marconi, High energy proton induced signal in charge
coupled devices , Chelmsford, UK, 2009.
6
3. Hainaut, Oliver R, Basic CCD image processing, retrieved January 15,
2011.
2.3 SUMMARY
In this literature survey, the papers and journals discussed about the
select levels of the charge coupled device and the image recovery from the data
derived from the CCD. By using the second literature survey the reverse process
is used for the conversion of the data from the image to the data format. The
select levels that are to be selected of the image are selected by the first
literature survey. There are three select levels in the output of the circuit.
7
CHAPTER 3
DESIGN OF CHARGE COUPLED DEVICE
CIRCUIT OUTPUT.
Charge coupled device (CCD) circuit output should produce a waveform with
the following characteristics.
Sl No Characteristics Value
1. Frequency 1MHz
3.1 OBJECTIVE
The main objective of this project is to design a circuit that works as an
alternative for the charge coupled device that is of low cost and low noise. The
microcontroller is given a 12 bit digital input through the computer and the
external clocks F – Clock and R – Clock are given to the system. Whenever, the
two clocks change the output also change according to the input. The F – Clock
and the R – Clock are given through the external video card or it is generated by
the Arduino Uno.
As discussed in the previous chapter the output of the circuit has mainly
three select levels ‘Vm’, ‘Vr’ and ‘Vf’. The ‘Vm’ level is fixed but the ‘Vr’ and
‘Vf’ levels are adjustable i.e. both the levels are programmable and its value can
be varied by changing the digital inputs and clocks.
8
3.2 TIMING DIAGRAM
Vm
Op amp o/p Vr
(a) Vf
166ns
R – Clk
(b)
1 μs
F – Clk
(c)
Latch Clk
(d)
DAC I\P
(e)
9
The timing diagram is shown above. The output of the system is the
waveform – (a). The voltage level Vm in the (a) is the fixed at a level of 10V.Vr
and Vf are the voltage levels that vary due to the change in the input. The values
of voltage in the Vr and Vf vary from 9.8V to 9.5V. The waveform (b) is the R –
clk that is given to the multiplexer. The waveform (c) is the F – clk that is given
to the D – Flip Flops and the micro-controller. The waveform (d) is the clock
that is produced by the flip flops. The waveform (e) determined the DAC input.
TS = 100ns.
10
CHAPTER 4
CIRCUIT DESIGN
The circuit is designed based on the low noise and high speed conditions. The
latch (74HC373), flip flop (74HC74), DAC (AD565A), analog multiplexer
(74HC4051) and the operational amplifier (AD829).
11
From the figure 3.1 we can determine the signal that is used as a clock for the
latches. The flip flop used in this circuit is “74HC74”. It is dual D – Flip flop
IC.
The IC has common supply at pin number 14. The 5Vp digital input
is given at the supply pin and the input pin of both the flip flops i.e. pin number
2, 12. The F – Clk is given form the external source to the flip flops at the pin
number 3 and 11. An inverter is placed between the two flip flops so that the
clock is inversed in at pin 11. The output from the pin 6 is taken and it is sent
through the two inverters so that there is a little delay in the output and it is
connected to the clear (pin 3). The output from the pin 5 (Q) is given to the one
input of an OR gate. The D Flip flop output is only based on the clock and the
input given to the system when the reset and clear are high. The IC we use is a
positive edge trigger IC. When the clear and the preset values are low the output
varies rapidly and it does not depend on the clock to get a positive edge trigger.
The preset and the clear pins are used for the generation of the clock. There is a
little bit of time delay in the IC, the time delay of the flip flop is as given below
according to the datasheet.
12
Table 4.1.1 Time delay in D flip flop
1. Clk to Q 44ns
2. CLR to nQ 50ns
3. PRESET to nQ 50ns
Due to the time delays in the flip flop the circuit has some delay in
producing the output. Due to the two inverters the delay in the wire is 24ns as
each inverter has a delay of 12ns. In the similar process the connections to the
second flip flop in the circuit are given. The 5Vp digital power is given to the
pin 12 and the inverted clock to the pin 11. The output of nQ2 is given to the
clear pin and two inverters are placed in between the connection.
The output from the pin 9 is given to the other input of the OR gate.
The output from the OR gate is given as the clock for the latches. The signal
from the OR gate has a delay of 44ns compared to the original clock due to the
internal circuit delay. The input signal of the OR gate has an on time of 74ns
and the off time of 1882ns for the input coming from the first flip flop. The
signal coming from the second flip flop is delayed by 56ns and it has an on time
of same 74ns as the first flip flop. However it has an off time of 1870ns. This
difference is due to the inverter in between the two flip flops. The timing
diagram of the clock generated is given below:
13
1 μs
F – Clk
Inverted F-Clk
12ns 988 ns
Output
We know that,
Rise time = 100ns
0.35
Bandwidth (MHz) =
100 ∗ 10−9
(S)
Bandwidth = 0.0035*109 Hz
The figure 4.2.1 determines the low pass op amp circuit filter to limit the
output signal bandwidth. Then by further calculation the value of resistor is
found to be 470Ω. The circuit of the op amp that is used is given below: The
resistor and capacitor values are found out by considering the bandwidth of the
signal. The following formula is used:
1
𝑓𝑐 = 𝐻𝑒𝑟𝑡𝑧
2𝜋𝐶𝑅2
16
As we know that the cut off frequency of the circuit is given as 3.5 MHz by
assuming the value of the capacitor first we can find the value of the resistor.
Assume the value of the capacitor is 90pF.
The following figure determines the op amp circuit that is used in the
microcontroller interface circuit. The low pass filter circuit is introduced in the
feedback so that the internal bandwidth of the op amp reduces from 25MHz to
3.5 MHz.
The DAC reference out in is connected to the input of the op amp along with
the output of the analog multiplexer. The reference pins in the DAC simplifies
the connection of the DAC to the operational amplifier. It is given in a non-
inverting mode because the data that is given to the input should not be inverted
and the output should be bandlimited.
17
4.2.2 Compensation Capacitor:
1 Open Open 68 16 66
2 1k 1k 25 38 71
5 511 2.0 k 7 90 76
20 105 2k 0 230 55
18
CHAPTER 5
NOISE CALCULATIONS
5.1 OP AMP NOISE MODEL
In the figure 5.1, the total noise of all sources is shown referred to input
(RTI). The RTI noise is useful because it can be compared directly to input
signal level. The total noise referred to output (RTO) is obtained simply
multiplying the RTI noise by the noise gain.
R2 2
Vn2 + 4kTR3 + 4KTR1 [ ]
R1+R2
RTI Noise = √𝐵𝑊 ∗ √
R1.R2 2 R1 2
+In2 R32 + In2 [ ] + 4kTR2 [ ]
R1+R2 R1+R2
BW = 1.57 fCL
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The above model assumes that the feedback network is purely
resistive. If it contains reactive elements (usually capacitors), the noise gain
is not constant over the bandwidth of interest. However, for precision
applications where the feedback network is most likely resistive, the
equations are valid. A resistor basically produces a noise which is names as
Johnson noise and is equal to √4𝑘𝑇𝐵𝑅 where k is the Boltzmann’s constant
(1.38 * 10-23 J/K), T is the absolute temperature, BW is bandwidth in Hz and
R is the resistance in Ω.
The noise gain (NG) of a non-inverting amplifier is generally given as
𝑅2
𝑁𝐺 = 1 + (1)
𝑅1
And the noise gain for the inverting amplifier is given as:
𝑅2
𝑁𝐺 = − (2)
𝑅1
In the circuit that we use we are using the equation 1 as we are using a non-
inverting amplifier. The voltage noise varies for various operational
amplifiers from under 1nV/√Hz to 20nV/√Hz, or even more. Compared to the
JFET input amplifiers the bipolar input op amps tend to have low input
voltage noise density, at the cost of large input capacitance and hence large
input devices. Compared to the voltage noise density the current noise density
varies more widely, from around 0.1fA/√Hz (in JFET input op - amps) to
several pA/√Hz. For bipolar or JFET input devices where all the bias current
flows into the input junction, the current noise is simply the Schottky (or
shot) noise of the bias current. The shot noise spectral density is simply 2IBq
20
amps/Hz, where IB is the bias current (in amps) and q is the charge on an
electron (1.6*10–19 C). It cannot be calculated for bias-compensated or current
feedback op amps where the external bias current is the difference between
two internal current sources.
Current noise is only important when it flows through an
impedance and in turn generates a noise voltage. The equation of the RTI
noise shows hoe the current noise flowing in the resistors contribute to the
total noise. The choice of a low noise op amp therefore depends on the
impedances around it. Consider another op amp, a bias compensated op amp
with low voltage noise, but quite high current noise. The formulae for the
related to input (RTI) noise is derived by the usage of the superposition
theorem and the concept of the virtual short in the circuit. The source resistor
always produces a Johnson’s noise of 4KTR. The noise voltage to the op amp
input from the source by the resistor R and R1. Therefore the voltage noise
𝑅1
for the resistor R is given as 4KTR(𝑅+𝑅1)2 . R1 is typically used to terminate
the input of the device so that R=R1. The amplifiers noise is a combination of
the voltage noise of the op amp, current noise of the op amp and the voltage
noise of the other components of the circuit. In the same way if the voltage
noise at the resistor 1 is taken into consideration then the voltage noise of the
𝑅
resistor 1 i.e. R1 is given as 4KTR1(𝑅+𝑅1)2. With a source resistance of 3k
ohms, the current noise increases a hundredfold to 300Nv, while the voltage
noise is unchanged, and the Johnsons noise increased tenfold. The bandwidth
is multiplied by 1.57 because the LPF cuts the frequency at certain frequency
by practically the frequency is not accurately dropped, a slight delay is there
in the cut-off frequency and the noises in that frequency is also included in
the noise calculations.
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5.2 NOISE MODEL OF OP AMP CIRCUIT
Noise voltage i.e. V associated with AD829 is 1.7nv/√Hz and the
input current noise density is 1.5pA/√Hz.
R2 2
Vn2 + 4kTR3 + 4KTR1 [ ]
R1+R2
RTI Noise = √𝐵𝑊 ∗ √
R1.R2 2 R1 2
+In2 R32 + In2 [ ] + 4kTR2 [ ]
R1+R2 R1+R2
BW = 1.57 fCL
BW = 1.57 * 3.5MHz
BW = 5.4MHz.
𝐹ℎ
Vn = 𝑉 √𝐹𝑐 ln + (𝐹ℎ − 𝐹𝑙)
𝐹𝑙
But as fh>> fl
22
(fh- fl) can be written as fh
3.5𝑀
Vn = 1.7√60 ln + 3.5𝑀
100
Vn = 1.7 (1870.9)
Vn = 3.18μV.
In = 1.5 (1870.9)
In = 2806 pA.
𝑅2
√4𝑘𝑇𝑅1 ∗ = √500(3.5𝑀 − 100) ∗ 1.28 ∗ 10−10 ∗ 0.5
𝑅1 + 𝑅2
= 8465 * 10-10
= 0.8μV
𝑅1
√4𝑘𝑇𝑅2 ∗ = √500(3.5𝑀 − 100) ∗ 1.28 ∗ 10−10 ∗ 0.5
𝑅1 + 𝑅2
= 8465 * 10-10
= 0.8μV
√4𝑘𝑇𝑅3 = √250(3.5𝑀 − 100) ∗ 1.28 ∗ 10−10
= 11971.5 * 10-10
= 1.197 μV
= 701500 * 10-12
= 0.7 μV
R1.R2 500.500
IN = 2806 pA ∗
R1+R2 1000
= 0.7 μV
23
RTI Noise = √3.182 + 0.82 + 0.82 + 1.192 + 0.72 + 0.72
= √14.75
= 3.84 μV
= √50.75
= 7.12 μV
𝑅2
Noise gain = 1 +
𝑅1
470
=1+
470
=2
= 7.12 * 2
= 14.24 μV
From the above equation we found out that the noise in the system
satisfies our required condition of <20μV rms. Hence this system can be used to
reduce the noise of the output.
24
5.3 VOLTAGE REGULATOR CIRCUIT
The analog multiplexer requires a voltage of 5.6V as the
power supply. A voltage regulator is used to regulate the voltage at the power
supply pin. Here LM317 IC is used as a voltage regulator. LM317 is an
adjustable 3 terminal positive voltage regulator capable of supplying 1.5A
current over a 1.2V to 37V output range.
𝑅21
Output voltage VO is given as VO = 1.25 [1 + ]
𝑅22
25
5.4 MICROCONTROLLER INTERFACE CIRCUIT
26
CHAPTER 6
MICRO CONTROLLER.
6.1 EVALUATION KIT
UC3 – LO XPLAINED
XMEGA – A1 XPLAINED
XMEGA – 1284P XPLAINED
XMEGA B1 XPLAINED
XMEGA – A3BU
SAM4S XPLAINED
SAM 3U EK
SAM 3N EK
SAM 3S WK
UC 3L EK
UC3C EK XPLAINED
UC3 A3
EVK1100
EVK 1400
EVK 1200
Of these 15 evaluation kits based on the GPIO pins the speed and
the USB port the kit is selected the all the microcontroller kits contains the USB
27
data supply except SAM 3N EK. The external memory is used in the data for
the evaluation kits are sufficient for the micro controllers, SAM 4S, SAM 3U,
SAM 3S, UC3L, EVK 1100 and UC3A3 XPLAINED.
28
The block diagram of the microcontroller is as given below:
29
The hardware component of the device is given below:
The kit needs a power supply that can deliver 5V and up to 500mA
current. The actual requirement of current for the board is much less than
500mA. The power can be supplied to the board via USB connected to the pin
10 on the header J3.The voltage is regulated to 3.3V with an on board regulator.
The kit is programmed by an external programming tool Actel Studio 4 through
USB bootloader which is pre-programmed on the device. The device has five
header jumpers. Each header contains 10 pins. Of these five headers, two
headers have already fixed communication interface. The headers J2 and J3 has
general purpose digital input and output. For the SDRAM footprints are
available for adding either an industrial standard or a propriety Atmel Data
Flash serial flash.
30
CHAPTER 7
RESULTS AND DISCUSSION
1.
The figure 7.1 indicates the f clock that is given to the microcontroller and
the flip flops. This result is the output that is derived from the Arduino uno by
the processing of the program that is mentioned above. This clock is used for
the generation of the clock signal for the latches by using the flip flops.
31
2.
The output waveform at figure 7.2 is the R clock signal that is given
to the analog multiplexer. This R clock determines which input channel that
should be selected. The on time of the signal is given as 166ns.
3.
32
The Figure 7.3 is the clock that is generated by using the
flip flops. This clock is given to the latch and this determines when the output
from the latch should be sent to the digital to analog signal.
4.
33
CHAPTER 8
CONCLUSION
The PCB that works as an alternative for the CCD has been designed by
using D flip flop, latch, digital to analog converter (DAC), analog multiplexer
and an operational amplifier.
The circuit that has been designed is interfaced with the microcontroller
and a computer for the circuit to work as a low noise and low cost charge
coupled device.
REFERENCES
34
APPENDIX:
int data=0;
int i=0;
const int maxChars = 3;
char chData[maxChars];
int index=0;
const int F_Clk_pin = 10; //PB2
const int R_Clk_pin = 11; //PB3
int F_Clk_state=0;
int R_Clk_state=0;
//unsigned long currMillis=0;
//unsigned long oldMillis=0;
//int F_Clk_time=5000;
//int R_Clk_time=5000;
void setup() {
// put your setup code here, to run once:
Serial.begin(9600);
pinMode(F_Clk_pin, OUTPUT);
pinMode(R_Clk_pin, OUTPUT);
DDRD = 0xFF;
DDRB = DDRB | 0b00000011;
PORTD=0x00;
}
void loop() {
// put your main code here, to run repeatedly:
Serial.write('1');
serialEvent();
Serial.write('0');
35
//write data to GPIO
PORTD = (char)(data<<2);
PORTB = (PORTB&0b11111100) | (((char)data)&0b00000011);
digitalWrite(F_Clk_pin,HIGH);
digitalWrite(R_Clk_pin,HIGH);
delay(1);
digitalWrite(R_Clk_pin,LOW);
delay(4);
digitalWrite(F_Clk_pin,LOW);
delay(4);
Serial.write('1');
serialEvent();
Serial.write('0');
//write data to GPIO
PORTD = (char)(data<<2);
PORTB = (PORTB&0b11111100) | (((char)data)&0b00000011);
digitalWrite(F_Clk_pin,HIGH);
delay(5);
digitalWrite(F_Clk_pin,LOW);
delay(4);
/*
currMillis=millis();
if(currMillis - oldMillis >F_Clk_time) {
oldMillis = currMillis;
if (R_clk_state == LOW)
R_Clk_state = HIGH;
else
R_Clk_state = LOW;
}
36
*/
}
void serialEvent() {
while(1) {
if(Serial.available()) {
char ch = Serial.read();
//Serial.write(ch);
if((index<(maxChars-1))&&(isDigit(ch))) {
chData[index++]=ch;
}
else if(index==(maxChars-1)) {
chData[index++]=ch;
data = atoi(chData);
index=0;
break;
}
else {
chData[index++]=0;
}
}
}
}
37