Beruflich Dokumente
Kultur Dokumente
Approvals:
Consuelo Tangpuz Noel Laylo Edwin Esperanza Cyrus dela Rama Roger Pineda
PTG Dept. Manager Engineering Dept. Maintenance Dept. Operations Manager QA & R Manager
Manager Manager
Rev # Date Originators Revision History Rev # Date Originators Revision History
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
Die Connect Intermitte RDSon 6 S Inconsistent DAP 6 DAP and fused 1 36 Change C. Estacio Actio 6 3 1 1
Attach s die ntly failure planarity which leads lie on the leadframe (lf) 10 Aug. n(s) 8
Pad back- provide will result to same plane thus design from ‘98 reflecte
(DAP) side to backside inconsistent reducing dual strand to d in
leadfram connection solder wire tendency of DAP single strand (CB)36-
e for (partial dispense height tilting during for better 0001
drain failure) resulting to upset process DAP planarity C. rev. B
connecti varying solder done by supplier Specify 2 mils Quiñones drawing
on quantity. Design maximum lf 11 Sept. Actio
Irregular DAP verification rail ‘98 n(s)
surface causing through etched parallelism to reflecte
poor soft solder leadframe tooling DAP in the d in
wetting during IQC visual drawing to (CB)
D/A sampling ensure 36-
inspection prior tolerable DAP C. Estacio 0001rev
to use planarity. 21 Aug. .D
Specify 0.5 ‘98
mil maximum
DAP surface Actio
flatness in n(s)
drawing. reflecte
d in
(CB)36-
0001
rev C
No Drain open 6 S Inconsistent DAP 3 (same as above) 1 18
connection planarity which
to die back can contribute to
(complete missing soft
failure) solder material
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
Isolates Complete Electrical 8 S DAP width too 9 Minimum 5 36 Reduce DAP C. Action(s) 8 2 1 1
drain failure to short wide causing clearance 0 width from 113 Quiñones Reflected 6
connecti isolation DAP-source or between DAP & mils 106 size, 5 Oct. ‘98 in
on from DAP-gate shorting source/ gate set thus increasing (CB)36-
source at 5.4 mils the minimum 0001
and gate Design clearance Rev. F
verification between DAP
through etched lf & source/ gate
tooling to 10.4 mils.
IQC dimensional
sampling
inspection prior
to use
Over- Poor thermal 8 S DAP size too 4 DAP design rule: 2 64 Increase DAP C. Action(s) 8 4 2 6
isolation performance small to promote 7 mils longer than length from Quiñones reflected 4
(partial of device fast heat die in each side 155 to 160 to 1Feb ‘99 in
failure) dissipation DAP size = 113 compensate (CB)36-
mils x 155 mils metal volume 0001
IQC dimensional loss when DAP Rev. M
sampling width is
inspection prior reduced from
to use 113 mils to
SO-8 Package 106 mils.
thermal
simulation using
145 mils x 90
mils die size
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
Dissipat Inefficient Poor 9 C D/A voids due to 5 Material 4 18 Increase DAP C. Action(s) 9 5 2 9
es heat heatsinking thermal poor wetting as selection: 0 length from Quiñones reflected 0
during or heat device a result of Alloy194 with 155 to 160 to 1Feb ‘99 in
device dissipation performanc irregular DAP thermal compensate (CB)36-
applicati (partial e surface resistivity = metal volume 0001
on failure) Over- DAP size too 0.625 cal/cm- loss when Rev. M
stressed small to promote C-sec DAP width is
internal fast heat KFC with reduced from
package dissipation thermal 113 mils to C. Estacio
assembly resistivity = 106 mils. 21Aug.’98 Action(s)
resulting to 0.87 cal/cm-C- Specify 0.5 reflected
die cracks sec mil maximum in
and DAP design rule: DAP surface (CB)36-
possible 7 mils longer than flatness in 0001 rev.
mold die in each side drawing. C
compound DAP size = 113
burning mils x 155 mils
IQC dimensional
sampling
inspection prior
to use
SO-8 Package
thermal
simulation using
145 mils x 90
mils die size
Design
verification
through etched
frame tooling
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
DAP Holds Pad tilting Insufficient 9 C Width of tie bar 6 Designed total 1 54
Tie Bar DAP (partial amount of not be enough width of tie bar =
firmly to failure) dispensed to support the 12 mils
avoid solder as a DAP during Designed shape
twisting result of stamping of tie bar: two-
or tilting varying process pronged bridge
during dispense to Location of tie between DAP &
stampin DAP bar not able to mold clamping
g distance suppress area
/coining RDSon moments Tie bar is
(@ failures strategically
vendor minimal situated near the
side) drain DAP edge (no
contact fuse-lead side) for
Reliability a more rigid
failures due support
to cracks Design
induced by verification
thin solder through etched lf
layer tooling
Holds DAP Floating D/A voids 5 S Width of tie bar 6 (same as above) 3 90 Change C. Estacio/ Action(s) 5 5 1 2
firmly DAP during due to poor not be enough leadframe 10Aug. ‘98 reflected 5
during D/A scrubbing to support the design from in
D/A (partial @ D/A spring back dual strand to (CB)36-
failure) RDSon action of DAP single strand 0001 rev.
failures during D/A for stronger B
Wrong die Location of tie DAP support
position bar not able to
suppress
moments
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
DAP Firmly Tie bar Index 8 S Width of tie bar 6 Designed total 1 48 Change C. Estacio Action(s) 8 3 1 2
Tie Bar supports premature jamming not be enough width of tie bar = leadframe 10Aug. ‘98 reflected 4
(contin the cut during during TNF to support the 12 mils design from in
ued) molded TNF package during Designed shape dual strand to (CB)36-
package (partial TNF of tie bar: two- single strand 0001 rev.
during failure) Location of tie pronged bridge for stronger B
trim & bar wrt molded between package package
form package not & mold clamping support
(TNF) able to suppress area during TNF
process moments Designed location
of tie bar: along
Y-axis of package
center
Design
verification
through etched lf
tooling
Too rigid Package 9 C Tie bar width too 5 Designed total 1 45
package delaminatio wide thus causing width of tie bar =
support n high mechanical 12 mils
(partial Package stress on the Designed shape
failure) crack package during of tie bar: two-
Reliability singulation pronged bridge
failures between package
& mold clamping
area
Design
verification
through etched lf
tooling
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
Mold Prevents Mold Visual 6 S Narrow clamping 1 Designed clamp 2 12 Increased mold C. Estacio Action(s) 6 5 1 3
Clampi mold flashing of reject width not able to 0 area width 0 clamping area 21Aug ‘98 reflected 0
ng flashing lower leads Solderabilit withstand mold outside package to from in
Area of leads (complete y problem transfer pressure is 12 mils approximately (CB)36-
below failure) High mold resulting to Testing of lf 30 mils to 50 0001 rev.
dambar compound flooding of mold prototypes during mils C
(via rail usage rate flashes into rail preliminary mold
downset downset channel tool set-up
channel) and into lower
leads
Holds DAP Flimsy tie Weakening 6 S Distance 4 Designed 1 24
tie bar bar support of tie bar between molded distance from
after mold Premature package and mold outline to
(partial breakage of mold clamping tie bar neck = 3.5
failure) tie bar area too wide mils
during Follow
dejunk & conventional SO-
TNF 8 design
Testing of lf
prototypes during
preliminary
dejunk & TNF
tools set-up
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
Leadfr Connects Flimsy Index 7 S Narrow leadframe 6 Designed 4 16 Change lf C. Estacio Action(s) 7 3 1 2
ame every unit leadframe jamming @ rails cannot resist leadframe rail 8 design from 10Aug. ‘98 reflected 1
Rail to make a (partial D/A mechanical width = 97mils/ dual strand to in
sturdy failure) Leadframe stresses causing side single strand, (CB)36-
leadframe bowing deformations Design thus 0001
strip Poor after several verification increasing Rev. B
(backbon alignment handling through etched lf the rail to lf C. Estacio
e of the to topframe tooling width ratio 21Aug. ‘98
leadframe resulting to from 27% to Action(s)
) poor source 41% reflected
& gate Increase rail in
contacts width to 126 (CB)36-
Electrical mils per side 0001
fall-outs Rev C
Leadfr Maintain Non-parallel Irregular 8 S Poor rail planarity 7 Design verification 6 33 Specify 2 mils C. Action(s) 8 6 2 9
ame parallelis bottomfram contact condition through etched lf 6 maximum Quiñones reflected 6
Rail m of e to between (irregular macro- tooling parallelism of 11Sept. in
(contin bottomfra topframe topframe & contours on rails rails wrt leads ‘98 (CB)36-
ued) me to assembly Si die surface) 0001 rev.
topframe (complete solder D
failure) bumps
Electrical
fall-outs
(gate/
source
open)
Low
process
yield
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
Maintain Non- No contact 8 S Poor surface 7 Design verification 6 33 Specify 0.5 C. Estacio Action(s) 8 6 2 9
lead coplanar between flatness of rail through etched lf 6 mils maximum 21Aug. ‘98 reflected 6
coplanarit topframe & topframe & tooling surface in
y of bottomfram solder balls/ flatness of rail (CB)36-
bottomfra e leads bumps in the drawing 0001 rev.
me to (complete Electrical C
topframe failure) fall-outs
(gate/
source
open)
Low
process
yield
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
Rail Connects Rail Floating 9 C Weak tie bar 6 Designed lead 1 54 Reduce leads C. Action(s) 9 6 1 5
Ti individual disconnects leads design tie bar width = 31 tie bar width Quiñones reflected 4
e units to (partial Intermittent Narrow tie bar mils from 31 mils 26Feb. ‘99 in
Ba leadframe failure) contact width Total to 28 mils (for (CB)36-
r rails & between horizontal rail strip cutting 0001
makes-up topframe & width (@downset purposes) Rev. P
width of solder balls/ area) = 202 mils
the bumps Design
leadframe Electrical verification
(Analogy: fall-outs through etched lf
ribs of the (gate/ tooling
human source
body') open)
Dejunk &
TNF index
jamming
Deflash
jamming
Low
process
yield
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
Rail Reduces Inconsistent No contact 8 S Rail tie bar 7 Designed slots 2 11 Increase total C. Action(s) 8 3 2 4
Tie Bar over-all downset between downset slots split rail tie bar 2 rail tie bar Quiñones reflected 8
Downs downset depth topframe & too small (its into three. Active downset slot 20Nov. ‘98 in
et rail tie bar (partial solder balls/ effect in tie bar locations length from (CB)36-
Slots volume failure) bumps reducing over-all along DAP tie bar, 115 mils to 0001
for Electrical upset rail dambar & leads 157 mils rev. J
improved fall-outs volume is tie bar
downset (gate/ insignificant) Designed rail tie
control of source bar downset slots
leadframe open) total length =
manufact Low 115 mils/ unit
uring process against 202 mils/
yield unit total rail
downset length
[Ref: (CB)36-0001
Rev H]
Design
verification
through etched lf
tooling
IQC dimensional
sampling
inspection prior
to use
Rail Maintain Non-parallel No contact 8 S Poor planarity of 7 Designed rail tie 6 33 Specify 2 mils C. Action(s) 8 6 2 9
Tie Bar parallel & topframe & between rail wrt bar downset 6 maximum Quiñones reflected 6
Downs sufficient bottomfram topframe & bottomframe depth = 8 2 mils parallelism of 11Sept. in
et gap for e leads solder balls/ leads Design rails to ‘98 (CB)36-
topframe (partial bumps Inconsistent rail verification bottomframe 0001
failure) Electrical downset depth through etched lf leads rev. D
fall-outs tooling
(gate/
source
open)
Low
process
yield
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe
C Area/
Part/ Potential Potential S L Potential Cause O Design D R Recommended Individual Actions S O D R
Process Function Failure Effect(s) E A of Failure C Verification or E P Actions Responsibl Taken E C E P
Modes of Failure V S C Current Control T N e& V C T N
S Timeframe