CIM a Current Inverting Metamutator and

Its Application to Universal Filters Among Others

Elham Minayi* and Izzet Cem Göknar†
*
ECE Department, Doğuş University, Istanbul, Turkey
†
EE Department, Işık University, Istanbul, Turkey
E-mails: *eminayi@dogus.edu.tr, †cem.goknar@isikun.edu.tr

II. VOLTAGE INVERTING AND CURRENT INVERTING

Abstract—A new kind of metamutator namely “Current METAMUTATORS
Inverting Metamutator,” its realizations using different types of
The Voltage Inverting Metamutator (VIM) and Current Inverting
active blocks and some of its applications are given in this paper.
Metamutator (CIM) 4-port block diagrams are shown in Fig. 1 and
As a classical application of the metamutator simulation of a
Fig. 2 respectively and their port descriptions are defined via the
memristor and, as an original application, several schemes simple equalities (1) and (2) respectively.
realizing universal filters are proposed. The post-layout
characteristics of both applications, using TSMC 0.13 μm process + v2
-
parameters with r0.75 V power supply voltage, are presented to
i2
confirm the theoretical analysis.
i1 i3
Keywords—mutator; memstors; universal filter; metamutator + +
v1
- VIM v3
-
I. INTRODUCTION
The first hard-realization of memristor introduced in [1], was
i4
achieved in the same paper using mutators with highly complex -
realizations. Since then many types of much simpler mutator circuits + v4
have been proposed for realizing memristors, meminductors or Fig. 1. Block diagram of VIM 4-port metamutator [8,9]
memcapacitors from nonlinear resistors [1-7]. Recently a new
multipurpose 4-port, which has been introduced in [8] and named ݅ଵ ͳ Ͳ Ͳ Ͳ ݅
metamutator in [9], has been shown capable to implement a variety ݅ଷ ଶ
൦ ൪ ൌ ቎Ͳ ͳ Ͳ Ͳ ቏ ൦ ݅ସ ൪
of elements/systems like memstors*, mutators, trans-admittance, ‫ݒ‬ଷ Ͳ Ͳ ͳ Ͳ ‫ݒ‬ଶ (1)
trans-impedance amplifiers, quadrature oscillators, inverters, ‫ݒ‬ସ Ͳ Ͳ Ͳ ͳ െ‫ݒ‬ଵ
gyrators, when some of its ports are properly terminated. Several IC
designs (one with as few as twelve transistors) of metamutators have + v2
-
been proposed and discussed in [8-10]. As perceived from the
defining port relation (1) the metamutator inverts one port voltage i2
and will henceforth be called a Voltage Inverting Metamutator i1 i3
+ +
CIM
(VIM).
v1 v3
Recently universal filters, filters having low-pass, high-pass, - -
band-pass, notch and all-pass outputs, are being produced by several
manufacturers and many realizations have been given [11-14]. For
i4
example a commercially available one [11] uses two capacitors, 3+ -
+ v4
OpAmps and 4+ resistors.
Fig. 2. Block diagram of CIM 4-port metamutator
The Current Inverting Metamutator (CIM) will be introduced in
Section II via its port description; three CIM circuit realizations will ݅ଵ ͳ Ͳ Ͳ Ͳ ݅
be offered in Section III. Analysis and PSpice simulations of a CIM ݅ଷ  ଶ
൦ ൪ ൌ ቎Ͳ ͳ Ͳ Ͳ቏ ൦ െ݅ସ ൪ (2)
simulating a memristor will be implemented with TSMC 0.13 μm ‫ݒ‬ଷ Ͳ Ͳ ͳ Ͳ ‫ݒ‬ଶ
process parameters, r0.75 V and 0.24 V supply voltages in Section ‫ݒ‬ସ Ͳ Ͳ Ͳ ͳ ‫ݒ‬ଵ
IV. The universal filter circuit is presented, its multifunctional
outputs derived, its filter characteristics illustrated with Pspice In (1) and (2) attention should be paid to port currents’ and port
simulations, effectuated using same TSMC technology parameters in voltages’ reference directions; due to the – sign for the voltage
Section V. Finally, Section VI will conclude the paper. ‫ݒ‬ଵ in (1) and the – sign for the current ݅ସ in (2).
*Family name for memristors, memcapacitors and meminductors.

978-1-5090-3982-1/17/$31.00 ©2017 IEEE 289 TSP 2017

 III. REALIZATIONS OF CURRENT INVERTING ݅௭ା ͳ Ͳ Ͳ ݅
௫
METATMUTATOR ݅௭ି െͳ Ͳ Ͳ ቏ ൥‫ ݒ‬൩
൦‫ ݒ‬൪ ൌ ቎ (5)
௫ Ͳ ͳ Ͳ ௬
Three new metamutator CIM configurations using two active ݅௬ ‫ݒ‬௭
Ͳ Ͳ Ͳ
blocks each are being proposed in this section; derivation of port
relations will be illustrated only for the one in Fig. 3, the others being Again, the relation between port currents and voltages of the
similar. The first one is designed by using one Current Feedback circuit in Fig. 4 becomes as given with expression (2) after some
Operational Amplifier (CFOA) and one second-generation plus type algebraic manipulations.
Current Conveyor (CCII) as illustrated in Fig. 3.
i4
The third CIM is designed using two CFOAs, defined by (4), as
+ - shown in Fig. 5. It can easily be verified that the 4-port satisfies the
W1 Z2 CIM port description as given by (2).
Y1 X2
i3
+ Y W Y Z
i2 CFOA CCII+
i1
X1 Z1 Y2 CFOA CFOA +
+ i1 + i3 i2
X Z X W
+ +

Fig. 3. Metamutator using CFOA and CCII+ i4

The port definition of ideal CCII+ and CFOA elements are given - +
with the matrix representations as shown in (3) and (4) respectively. Fig. 5. Metamutator realized with two CFOAs

݅௬ Ͳ Ͳ Ͳ ‫ݒ‬௬ IV. CURRENT INVERTING METAMUTATOR APPLICATIONS

൥‫ݒ‬௫ ൩ ൌ ൥ͳ Ͳ Ͳ ൩ ൥ ݅௫ ൩ (3)
݅௭ Ͳ ͳ Ͳ ‫ݒ‬௭ All applications achieved by VIM can also be obtained with CIM,
by connecting proper elements to three ports of the CIM metamutator
݅௭ ͳ Ͳ Ͳ Ͳ ݅௫ other circuit elements can be obtained at the fourth port [8,10]; a table
‫ݒ‬௫ Ͳ቏ Ǥ ൦ ‫ݒ‬௬ ൪ similar to Table 2 in [8] for VIM can also be given for CIM. For an
൦ ‫ ݒ‬൪ ൌ ቎Ͳ ͳ Ͳ (4)
௭ Ͳ Ͳ ͳ Ͳ ‫ݒ‬௪ illustration, by connecting an inductor to port 4, a capacitor and a
݅௬ Ͳ Ͳ Ͳ Ͳ ݅௪ nonlinear resistor ݂ோ ሺ‫ݒ‬ோ ǡ ݅ோ ሻ ൌ Ͳto ports 2 and 3 respectively, as
shown in Fig. 6, a memristor will be achieved at port 1.
The following chain of equalities using CFOA and CCII+ port
Y W Y Z
description and Kirchoff’s Laws
i1
‫ݒ‬ଶ ൌ ‫ݒ‬௫భ ൌ ‫ݒ‬௬భ ൌ ‫ݒ‬ଷ ՜ ࢜૛ ൌ ࢜૜ CFOA CFOA +
‫ݒ‬ଵ ൌ ‫ݒ‬௭భ ൌ ‫ݒ‬௪భ ൌ ‫ݒ‬ସ ൅ ‫ݒ‬௫మ ൌ ‫ݒ‬ସ ൅ ‫ݒ‬௬మ ՜ ࢜૚ ൌ ࢜૝ X Z
i3 i2
X W
݅ଶ ൌ ݅௫భ ൌ ݅௭భ ൌ ݅ଵ ՜ ࢏૚ ൌ ࢏૛ + +
݅ଷ ൌ ݅௬భ ൅ ݅௭మ ൌ Ͳ ൅ ݅௭మ ൌ െ݅ସ ՜ ࢏૜ ൌ െ࢏૝
verify the CIM 4-port description as given by (2).
i4

The second CIM metamutator, extracted from [4], is designed by - +

using two Dual Output second generation Current Conveyors
(DOCCII) as shown in Fig. 4. Fig. 6. Memristor with the metamutator of Fig. 4

i4 + Using KCL, KVL, element defining relations a memristor having

the same but, scaled characteristic with that of the resistor is obtained:
ଵ ଵ
݂ோ ቀ ‫ݍ‬ଵ ǡ ߮ଵ ቁ ൌ Ͳ (6)
Y Z- Y Z- ஼ ௅

DOCCII DOCCII The CIM circuit in Fig. 5 was simulated using a sinusoidal current
X Z+ Z+
source with amplitude of 90 μA and frequency of 8 Hz at port 1. For
i1 X
i2 the nonlinear resistor in Fig. 6 one diode 1N4148 and two resistors,
+ + + i3
connected as shown in Fig. 7 were used at port 3 of the CIM. For
CFOA, TSMC 0.13 μm CMOS process parameters were used, with
transistor dimensions as shown in Table I and its circuit in Fig. 8. The
supply voltage is chosen as ±0.75V and VB as 0.24 V. The inductor
Fig. 4. Metamutator realized with two DOCCIIs and capacitor values were selected as 350 mH and 4 μF, respectively.
1. 2 K

The port definition of ideal DOCCII element is given with the

iR
matrix representation as shown in (5). 2. 2 K
vR

Fig. 7. Nonlinear Resistor

290
 VDD TABLE II. DIFFERENT CONFIGURATIONS FOR THE UNIVERSAL FILTER
ሺ࡯૚ + ࢜ࡿ૚ ሻ//
VB
Realization ࡾ૜ ࡯૛ ࡾ૛ +ࢂ࢙૜
M16 ሺࡾ૚ +࢜ࡿ૛ )
M1 M6 M9 M11
#1 Port 1 Port 2 Port 4 Port 3
Z
#2 Port 4 Port 3 Port 1 Port 2
Y M2 M4 x M12 M14 W
#3 Port 2 Port 1 Port 3 Port 4
M7 M 17
#4 Port 3 Port 4 Port 2 Port 1
M13 M15
M3 M5 M8 M 10 M18

+ i4
VSS
W Y Z X
Fig. 8 Transistor level circuit of CFOA [15] i3 +
vS2 CFOA CCII+
i2
The result of the simulation is shown in Fig. 9 confirming the +
X Z
vS1 + vS3
Y
memristive relationship between ‫ ݒ‬and ݅. i1

600

400
(a)
200
Voltage [mV]

+ i4
0

-200 W Y Z X
i3
-400
CFOA + CCII+
i2
-600
-100 -80 -60 -40 -20 0 20 40 60 80 100 X Z Y
Current [uA] i1 +
Fig. 9. The ‫ ݒ‬െ ݅characteristic of the memristor.
vS2 vS1
TABLE I. DIMENSIONS OF THE TRANSISTORS USED IN CFOA vS3
Transistor W/L (b)
M1, M2, M4, M6, M9, M11, M12, M14, M16 41.6μm/0.52μm Fig. 10 Application of 4-port with CCII+ and CFOA in Universal filter
(a) Realization #1 and (b) Realization 2
M7 and M17 83.2μm/0.52μm
M3, M5, M8, M10, M13, M15, M18 13μm/0.52 μm TABLE III. DIFFERENT FILTERS OF R EALIZATION #1

V. UNIVERSAL FILTER APPLICATION OF CIM Selection ࢂࡿ૚ ࢂࡿ૛ ࢂࡿ૜ Filter Type
In this section a new metamutator application is being proposed. I ܸ௜௡ 0 0 High-Pass
By connecting several elements to ports of the CIM shown in Fig. 1, II 0 0 ܸ௜௡ Low-Pass
different realizations of Universal Filters will be achieved according
III 0 ܸ௜௡ 0 Band-Pass
to Table II. For example by using realizations #1 and #2 in the circuit
of Fig. 2 the configurations will become as shown in Fig. 10 (a) and IV ܸ௜௡ 0 ܸ௜௡ Band-Notch
(b) respectively. According to the general definition of CIM V ܸ௜௡ െܸ௜௡ ܸ௜௡ All-Pass
metamutator given with (2) ‫ݒ‬ଶ ൌ ‫ݒ‬ଷ and assume that the output is
‫ݒ‬௢௨௧ ൌ ‫ݒ‬ଶ ൌ ‫ݒ‬ଷ . KCL at port 2 of the circuit in Fig. 10 (a) gives:
VI. SIMULATION RESULTS OF THE UNIVERSAL FILTER
ሺܸௌଶ െ ܸ௢௨௧ ሻ In this section the simulation results of the universal filter will be
‫ܫ‬ଶ ൌ ‫ܥݏ‬ଵ ሺܸௌଵ െ ܸ௢௨௧ ሻ ൅ (7)
ܴଵ exhibited. The filter in Fig. 10 (a) was simulated by applying an AC
௩ ଵ voltage source with amplitude of 1V to all inputs, one by one,
Using ݅ଶ ൌ ݅ଵ , ‫ݒ‬ଵ ൌ ‫ݒ‬ସ from (2), ݅ଵ ൌ െ భ , andܸସ ൌ െ ‫ܫ‬ in (7),
ோయ ௦஼మ ସ following Table III. Element values are chosen as ܴଵ = ܴଶ =ܴଷ= 1 kΩ
gives: and ‫ܥ‬ଵ =‫ܥ‬ଶ= 25 pF. As for CFOA and CCII, 0.13 μm CMOS
‫ܫ‬ସ ൌ ‫ ݏ‬ଶ ‫ܥ‬ଵ ‫ܥ‬ଶ ܴଷ ሺܸ௢௨௧ െ ܸௌଵ ሻ ൅
ௌ஼మ ோయ
ሺܸ௢௨௧ െ ܸௌଶ ሻ. (8) realization parameters are being used, with transistor level circuit
ோభ shown in Fig. 11 and parameters given in Tables I and IV. The supply
then using ݅ସ ൌ െ݅ଷ and ‫ܫ‬ଷ ൌ
ሺ௏ೄయ ି௏೚ೠ೟ ሻ
in (14) gives voltage is chosen as ±0.75 V with VB = 0.24 V.
ோమ
ሺ௏ೄయ ି௏೚ೠ೟ ሻ ௦஼మ ோయ TABLE IV. DIMENSIONS OF THE TRANSISTORS USED IN CCII.
ൌ ‫ ݏ‬ଶ ‫ܥ‬ଵ ‫ܥ‬ଶ ܴଷ ሺܸ௢௨௧ െ ܸௌଵ ሻ ൅ ሺܸ௢௨௧ െ ܸௌଶ ሻ(9)
ோమ ோభ
Transistor W/L
Solving for ܸ௢௨௧ in terms of source voltages from (9) the universal
M1, M2, M4, M6, M9 41.6 μm /0.52μm
filter output is obtained as shown by (10), with the selection of various
voltage sources resulting in different filter functions as illustrated in M7 83.2 μm /0.52 μm
Table III: M3, M5, M8, M10 13μm / 0.52 μm
௦మ ஼భ ஼మ ோభ ோమ ோయ ௏ೄభ ା௦஼మ ோయ ோమ ௏ೄమ ାோభ ௏ೄయ
ܸ௢௨௧ ሺ‫ݏ‬ሻ ൌ ௦మ ஼భ ஼మ ோభ ோమ ோయ ା௦஼మ ோయ ோమ ାோభ
(10)

291
 VDD 0

-10

VB
M1 M6 M9 -20

Gain [dB]
-30
Z
Y M2 M4 x -40

M7
-50
1 3 10 30 50
Frequency [MHz]
M3 M5 M8 M 10
Fig. 13 Simulation result for the low-pass filter in Fig. 10 (a)

0
VSS

Fig. 11 Transistor level circuit of CCII [15] -5

-10
In the remainder of this section filter functions and their simulated

Gain [dB]
characteristics will be displayed in Table V and Figures 12-16 -15
respectively.
-20
TABLE V. DIFFERENT FILTER FUNCTIONS
-25 1 3 10 30 100
Frequency [MHz]
Selection Filter Function Filter Type
‫ ݏ‬ଶ ‫ܥ‬ଵ ‫ܥ‬ଶ ܴଷ ܴଶ Fig. 14 Simulation result for the Band pass filter in Fig. 10 (a)
1 ܸ௢௨௧ ሺ‫ݏ‬ሻ ൌ ܸ௜௡  High-Pass
‫ܴ ܴܥ‬
‫ ݏ‬ଶ ‫ܥ‬ଵ ‫ܥ‬ଶ ܴଷ ܴଶ ൅ ‫ ݏ‬ଶ ଷ ଶ ൅ ͳ 0
ܴଵ
ͳ -4
ܸ௢௨௧ ሺ‫ݏ‬ሻ ൌ ܸ௜௡ 
2 ‫ܴ ܴܥ‬ Low-Pass
‫ ݏ‬ଶ ‫ܥ‬ଵ ‫ܥ‬ଶ ܴଷ ܴଶ ൅‫ ݏ‬ଶ ଷ ଶ൅ͳ
ܴଵ -8
Gain [dB]

‫ܥ‬ଶ ܴଷ ܴଶ
‫ݏ‬ -12
ܴଵ
3 ܸ௢௨௧ ሺ‫ݏ‬ሻ ൌ ܸ௜௡  Band-Pass
‫ܴ ܴܥ‬
‫ ݏ‬ଶ ‫ܥ‬ଵ ‫ܥ‬ଶ ܴଷ ܴଶ ൅ ‫ ݏ‬ଶ ଷ ଶ ൅ ͳ -16
ܴଵ
ሺ‫ ݏ‬ଶ ‫ܥ‬ଵ ‫ܥ‬ଶ ܴଷ ܴଶ ൅ ͳሻ -20
1 3 10 30 100
ܸ௢௨௧ ሺ‫ݏ‬ሻ ൌ ܸ௜௡ Band- Frequency [MHz]
4 ‫ܴ ܴܥ‬
‫ ݏ‬ଶ ‫ܥ‬ଵ ‫ܥ‬ଶ ܴଷ ܴଶ ൅ ‫ ݏ‬ଶ ଷ ଶ ൅ ͳ Notch
ܴଵ Fig. 15 Simulation result for the Notch filter in Fig. 10 (a)
‫ܴ ܴܥ‬
‫ܥ ݏ‬ଵ ‫ܥ‬ଶ ܴଷ ܴଶ െ ‫ ݏ‬ଶ ଷ ଶ ൅ ͳ
ଶ
ܴଵ 10
5 ܸ௢௨௧ ሺ‫ݏ‬ሻ ൌ ܸ௜௡ All-Pass
ଶ ‫ܥ‬ଶ ܴଷ ܴଶ
‫ܥ ݏ‬ଵ ‫ܥ‬ଶ ܴଷ ܴଶ ൅ ‫ݏ‬ ൅ͳ
ܴଵ 5
Gain [dB]

10 0

0
-5

-10
Gain [dB]

-10
1.0 3.0 10 30 100
-20
Frequency [MHz]

-30 Fig. 16 Simulation result for the All pass filter in Fig. 10 (a)

-40 1
3 10 30 50 All of the filter responses given above have a non-inverting unity
Frequency [MHz] gain. The angular resonance frequency (ɘ଴ ) and quality factor (Q) of
Fig. 12 Simulation result for the high-pass filter in Fig. 10 (a) all the proposed filters in Fig. 10 (a) are:
ଵ
߱଴ ൌ (11)
ඥ஼భ ஼మ ோయ ோమ

஼భ
ܳ ൌ ܴଷ ට  (12)
஼మ ோయ ோమ

In case ‫ܥ‬ଵ ൌ ‫ܥ‬ଶ ൌ ‫ ܥ‬and ܴଵ ൌ ܴଶ ൌ ܴଷ ൌ ܴ the angular

ଵ
frequency becomes ߱଴ ൌ  and the quality factor is ܳ ൌ ͳ.
ோ஼

292
 VII. CONCLUSION
It has been shown that Metamutators, recently introduced 4-ports
in [8,10], can be classified into two categories as: Voltage Inverting
VIM and Current Inverting CIM, introduced in this paper. CIM is
also capable to implement a variety of elements/systems like VIM
and it has been given three IC realizations, using two different IC
devices. One of these new realizations has been applied to the
simulation of a memristor, by properly terminating three of the ports,
showing satisfactory results.
Several new configurations, with properly terminated CIM ports,
have been shown to be able to generate Universal Filters, a new
application among many others presented in [8,10]. All five filter
types, band-, low-, high-, all-pass and band notch have been
simulated using TSMC 0.13 μm parameters for one configuration and
they have exhibited excellent frequency response.
Future work will be concerned with the comparison of VIM versus
CIM, novel types of Metamutators, different realizations, tuning
external elements to improve the behavior/characteristics of these
realizations and further applications like linear oscillators, operational
amplifiers etc..
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