PD 91573A

IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C

• UltraFast: Optimized for high operating VCES = 1200V

frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter VCE(on) typ. = 2.78V
G
parameter distribution and higher efficiency than
previous generations @VGE = 15V, IC = 24A
E
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n-cha nn el
bridge configurations
• Industry standard TO-247AC package

Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
TO-247AC

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 45
IC @ TC = 100°C Continuous Collector Current 24 A
ICM Pulsed Collector Current Q 180
ILM Clamped Inductive Load Current R 180
IF @ TC = 100°C Diode Continuous Forward Current 16
IFM Diode Maximum Forward Current 180
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 200
W
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.64
RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz)
www.irf.com 1
7/7/2000
IRG4PH50UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 1200 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.56 3.5 IC = 20A VGE = 15V
— 2.78 3.7 IC = 24A
— 3.20 — V IC = 45A See Fig. 2, 5
— 2.54 — IC = 24A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 23 35 — S VCE = 100V, IC = 24A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V
— — 6500 VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop — 2.5 3.5 V IC = 16A See Fig. 13
— 2.1 3.0 IC = 16A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 160 250 IC = 24A
Qge Gate - Emitter Charge (turn-on) — 27 40 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 53 80 VGE = 15V
td(on) Turn-On Delay Time — 47 — TJ = 25°C
tr Rise Time — 24 — ns IC = 24A, VCC = 800V
td(off) Turn-Off Delay Time — 110 170 VGE = 15V, RG = 5.0Ω
tf Fall Time — 180 260 Energy losses include "tail" and
Eon Turn-On Switching Loss — 2.10 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 1.50 — mJ See Fig. 9, 10, 18
Ets Total Switching Loss — 3.60 4.6
td(on) Turn-On Delay Time — 46 — TJ = 150°C, See Fig. 11, 18
tr Rise Time — 27 — ns IC = 24A, VCC = 800V
td(off) Turn-Off Delay Time — 240 — VGE = 15V, RG = 5.0Ω
tf Fall Time — 330 — Energy losses include "tail" and
Ets Total Switching Loss — 6.38 — mJ diode reverse recovery.
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 3600 — VGE = 0V
Coes Output Capacitance — 160 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 31 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 90 135 ns TJ = 25°C See Fig.
— 164 245 TJ = 125°C 14 IF = 16A
Irr Diode Peak Reverse Recovery Current — 5.8 10 A TJ = 25°C See Fig.
— 8.3 15 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 260 675 nC TJ = 25°C See Fig.
— 680 1838 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs TJ = 25°C See Fig.
During tb — 76 — TJ = 125°C 17

2 www.irf.com
 IRG4PH50UD
30

F o r b o th :
25
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
LOAD CURRENT (A)

T sink = 9 0 ° C
20 G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n = 40 W
S q u a re w a v e :

15 6 0% of rate d
volta ge

I
10

Id e a l d io d e s
5

0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000 1000
I C , Collector-to-Emitter Current (A)

I C, Collector-to-Emitter Current (A)

100 100

TJ = 150 o C


TJ = 150 o C

10 10


TJ = 25 o C 
TJ = 25 o C

1

V GE = 15V
20µs PULSE WIDTH
1

V = 50V
CC
5µs PULSE WIDTH
1 10 5 6 7 8 9 10 11 12
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

www.irf.com 3
IRG4PH50UD
50

4.0
VGE = 15V 
IC = 48 A
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

40
3.5

30

IC = 24 A
3.0

20


IC = 12 A
2.5
10

0 2.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , Case Temperature ( ° C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

0.50
Thermal Response (Z thJC )

0.20
0.1
0.10

0.05


0.02

0.01
0.01
 SINGLE PULSE
(THERMAL RESPONSE)
P DM

t1
t2

0.001

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC

0.00001 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4 www.irf.com
 IRG4PH50UD


7000


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 24A
6000 Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

Coes = Cce + Cgc 16
C, Capacitance (pF)

5000

Cies
4000 12

3000
8

2000 C
oes

1000 
Cres
4

0 0
1 10 100 0 40 80 120 160 200
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

 
5.00 100
V CC = 480V 5.0Ω
RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 800V
4.60 I C = 24A
25A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
Total Switching Losses ( mJ)

4.20 
IC = 48 A

10

IC = 24 A
3.80


IC = 12 A

3.40

3.00 1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
Ω
RG , Gate Resistance (Ohm) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
www.irf.com 5
IRG4PH50UD


15
5.0 Ω

RG = Ohm 1000
VGE = 20V
TJ = 150 °C
T J = 125 oC
VCC = 480V

I C , Collector-to-Emitter Current (A)

12 VGE = 15V
Total Switching Losses (mJ)

100
9

10
3

0
0 10 20 30 40 50
SAFE OPERATING AREA
1
I C , Collector-to-emitter Current (A) 1 10 100 1000 10000
VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
1000
Instantaneous Forward Current ( A )

100

T J = 150°C
10
T J = 125°C

T J = 25°C

1
0.0 2.0 4.0 6.0 8.0

F orward V oltage D rop - V F M (V )

Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current

6 www.irf.com
 IRG4PH50UD
300 40

VR = 200V VR = 200 V
T J = 125°C T J = 125°C
T J = 25°C T J = 25°C

30

200

IF = 3 2 A

I R R M - (A )
trr - (ns)

I F = 1 6A
I F = 32A
20
I F = 8 .0 A
I F = 16 A

100
I F = 8 .0A
10

0 0
100 1000 100 1000
d i f /dt - (A /µ s) di f /dt - (A /µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
1200 1000
VR = 200V
T J = 125°C VR = 200V
T J = 25°C T J = 125°C
T J = 25°C

900

I F = 32 A
di(rec)M /dt - (A /µ s)
Q R R - (nC )

600 I F = 1 6A 100
I F = 32 A

I F = 8.0A I F =1 6A
I F = 8 .0 A

300

0 10
100 1000 100 1000
di f /dt - (A /µ s) di f /d t - (A /µ s)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
www.irf.com 7
IRG4PH50UD

Same ty pe
device as
D .U.T.

90%
430µF
80%
of Vce D .U .T. Vge 10%

VC
90%
td(off)

10%
IC 5%
tr tf
Fig. 18a - Test Circuit for Measurement of t d(on) t=5µs
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eon Eoff
E ts = (Eon +Eoff )

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
G A T E V O L T A G E D .U .T .
Ic
trr
Q rr =
∫
tx
Icddt
id t

1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2
E o n = VVce
ce ieIcd t dt t4
t1

D IO D E R E V E R S E
E re c =
∫ Vd Ic dt
V d id d t
t3
t1 t2
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

8 www.irf.com
 IRG4PH50UD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 800V
RL=
4 X I C @25°C
1000V Vc* 0 - 800V
50V
600 0µF
100V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit

www.irf.com 9
IRG4PH50UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

Case Outline — TO-247AC

NOTE S:
3 .6 5 (.1 4 3 ) -D-
5 .3 0 (.2 0 9 ) 1 D IM E N S IO N S & T O LE R A N C IN G
1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5M , 1 98 2 .
1 5 .3 0 (.6 0 2 ) 4 .7 0 (.1 8 5 )
0 .2 5 ( .0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
-B- -A- 2.5 0 ( .0 8 9)
3 D IM E N S IO N S A R E S H O W N
1.5 0 ( .0 5 9) M IL LIM E T E R S (IN C H E S ).
5 .5 0 (.2 17 ) 4 4 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7A C .
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 ) 5.5 0 (.2 1 7)
2X
4.5 0 (.1 7 7) LEAD A S S IG N M E N T S
1- GAT E
1 2 3 2- COLLECTO R
3- E M IT T E R
4- COLLECTO R
-C-
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 )
* 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * LO N G E R LE A D E D (2 0m m )
V E R S IO N A V A IL A B L E (T O -2 47 A D )
T O O R D E R A D D "-E " S U F F IX
TO PAR T NUM BER
2 .4 0 (.0 9 4 ) 1 .4 0 ( .0 56 ) 0 .8 0 (.0 3 1 )
2 .0 0 (.0 7 9 ) 3X 3X
1 .0 0 ( .0 39 ) 0 .4 0 (.0 1 6 )
2X
0.2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 )
5 .4 5 (.2 1 5 ) 2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)

D im e n s io n s in M illim e te rs a n d (In c h e s )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00
10 www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/