1. What is a nucleonic sensing method employing usually one 9.

What is a three terminal device used to control large current

or more radioisotope sources and radiation detectors? to a load?
• A. Radiation sensing • A. SCR
• B. Sonic level sensing • B. SCS
• C. Conductivity level sensing • C. GTO
• D. Dielectric variation sensing • D. Thyristor
2. What is concerned with the measurement of electric signals 10. What is the other term for thermoelectric effect?
on the scalp with arise from the underlying neural activity in • A. Seebeck effect
the brain (including synaptic sources)?
• B. Hall effect
• A. ECG
• C. Photoelectric effect
• B. EEG
• D. Thermal effect
• C. Ultrasound 11. What are the regions corresponding to open-circuit
• D. EKG condition for the controlled rectifier which block the flow of
3. In therapeutic radiology and in nuclear medicine, the charge from anode to cathode?
energies of interest range from about • A. Forward blocking regions
• A. 10 to 100 KeV • B. Reverse blocking regions
• B. 100 to 10000 KeV • C. Breakdown regions
• C. 10000 to 10000 KeV • D. Both A and B above
• D. 1 to 10 KeV 12. The V-I characteristics for a triac in the first and third
4. Which of the following is a four-layer diode with an anode quadrants are essentially identical to those of _____ in the
gate and a cathode gate? quotation.
• A. SCS • A. SCR
• B. SCR • B. UJT
• C. SBS • C. Transistor
• D. SUS • D. SCS
5. What is basically a two-terminal parallel-inverse 13. When the temperature increases, the inter-base resistance
combination of semiconductor layers that permits triggering in of a UJT
either direction? • A. Remains unchanged
• A. Diac • B. Increases
• B. Triac • C. Decreases
• C. Quadrac • D. is zero
• D. Shockley Diode 14. The three terminals of a triac are
6. What is the typical value of the interbase resistance of • A. drain, source, gate
UJTs?
• B. two main terminals and a gate terminal
• A. 20 KΩ
• C. cathode, anode and gate
• B. Between 4 to 4 KΩ
• D. anode, source, gate
• C. 4 KΩ 15. A triac is equivalent to two SCRs
• D. Between 4 to 10 KΩ • A. in parallel
7. PUT stands for
• B. in inverse-parallel
• A. Programmable Unijunction Transistor
• C. in series
• B. Programmable Universal Transistor
• D. in inverse-series
• C. Pulse Unijunction Transistor 16. In diagnostic radiology and for superficial therapy
• D. Pulse Universal Transistor purposes, the energy spectrum of radiation varies from about
8. Which transistor conducts current in both directions when • A. 1 to 10 KeV
turned on?
• B. 10 to 100 KeV
• A. Diac
• C. 100 to 10000 KeV
• B. SCR
• D. 10000 to 100000 KeV
• C. Quadrac
•
• D. SCS
17. The x-ray region of the electromagnetic spectrum has a • D. a rectifier and inductor
corresponding range of wavelengths from 26. Which is the control element in an SCR?
• A. 0.1 to 0.0001 nm • A. Anode
• B. 0.1 to 0.0001 pm • B. Cathode
• C. 0.1 to 0.0001 μm • C. Gate
• D. 0.1 to 0.0001 mm • D. Cathode supply
18. The three terminals of an SCR are the 27. How many semiconductor layers does a triac have?
• A. anode, cathode, and grid • A. Two
• B. cathode, anode, gate • B. Four
• C. anode, cathode, drain • C. Three
• D. drain, source, gate • D. One
19. If a body is considered as a conducting sphere of 0.5m 28. A diac has how many semiconductor layers?
radius its capacitance to infinity is • A. Three
• A. 55 pF • B. Four
• B. 55 nF • C. Two
• C. 55 μF • D. Five
• D. 55 F 29. The p-type emitter of a UJT is _____ doped.
20. How many semiconductor layers does an SCR have? • A. lightly
• A. Four • B. moderately
• B. Two • C. heavily
• C. Three • D. not
• D. Five 30. A diac has
21. A triac is a _____ switch. • A. one pn junction
• A. unidirectional • B. three pn junctions
• B. mechanical • C. two pn junctions
• C. bidirectional • D. four pn junctions
• D. omnidirectional 31. A UJT is sometimes called a ____ diode.
22. Which of the following is the normal way to turn on an • A. double-based
SCR?
• B. single-based
• A. By breakover voltage
• C. a rectifier
• B. By appropriate anode current
• D. a switching diode
• C. By appropriate cathode current 32. A diac is _____ switch.
• D. By appropriate gate current • A. an AC
23. A triac can pass a portion of _____ half cycle through the
• B. a mechanical
load
• C. a dc
• A. only positive
• D. both ac and dc
• B. only negative
33. An SCR is made of silicon and not germanium because
• C. both positive and negative silicon.
• D. neither positive nor negative • A. is inexpensive
24. A diac has how many terminals?
• B. has low leakage current
• A. Two
• C. is mechanically strong
• B. Three
• D. is tetravalent
• C. Four 34. What is the control element in an SCR?
• D. Five • A. Gate
25. An SCR combines the feature of
• B. Anode
• A. a rectifier and resistance
• C. Grid
• B. a rectifier and capacitor
• D. Cathode
• C. a rectifier and transistor
35. An effect that reduces the possibility of accidental • D. 60 Hz frequency
triggering of the SCS. 44. When the emitter terminal of a UJT is open, the resistance
• A. Miller effect between the base-terminals is generally
• B. Rate effect • A. low

• C. End effect • B. extremely low

• D. Flywheel effect • C. high

36. Which of the following is a common application of UJT? • D. extremely high
• A. Amplifier 45. AC power in a load can be controlled by connecting
• B. Rectifier • A. two SCRs in series

• C. Mulitivibrator • B. two SCRs in parallel

• D. Sawtooth generator • C. two SCRs in parallel opposition

37. Which device does not have a gate terminal? • D. two SCRs in series opposition
• A. Triac 46. Which equation defines the intrinsic stand off ratio (η) of
UJTs?
• B. SCR
• A. RB1 / (RB1 + RB2)
• C. FET
• B. (RB1 + RB2) / RB1
• D. Diac
38. An SCR is a _____ triggered device. • C. (RB1 + RB2) / RB2

• A. current • D. RB1 + RB2

47. To turn off the SCR, which of the following is done?
• B. power
• A. Reduce gate voltage to zero
• C. voltage
• B. Reverse bias the gate
• D. noise
39. When UJTs is turned on, the resistance between emitter • C. Reduce anode voltage to zero
terminal and lower base terminal • D. Reduce cathode voltage to zero
• A. remains unchanged 48. Control system that maintains a speed voltage, or other
variable within specified limits of a preset level.
• B. increases
• A. Controller
• C. decreases
• B. Regulator
• D. becomes zero
40. The UJT has • C. Sensor

• A. two pn junctions • D. Computer

49. To turn on the UJT, the forward bias on emitter diode
• B. three pn junctions
should be _____ the peak point voltage.
• C. one pn junction
• A. more than
• D. four on junction
• B. less than
41. The UJT may be used as
• C. equal to
• A. an amplifier
• D. twice
• B. a rectifier
50. When the temperature increases, the intrinsic stand off
• C. a sawtooth generator ratio
• D. a multivibrator • A. increases
42. Which of the following is the normal way to turn on a • B. decreases
diac?
• C. essentially constant
• A. By breakover voltage
• D. becomes zero
• B. By gate voltage
51. What is dimensionless parameter of the second-order
• C. By gate current characteristic equation?
• D. By anode current • A. Damping ratio
43. Power electronics deals with the control of ac power at • B. Accuracy
what frequencies essentially?
• C. Efficiency ratio
• A. 20 KHz
• D. Transfer function ratio
• B. 1000 KHz
• C. Frequencies less than 10 Hz
52. What is the ratio of two exponential functions of time • C. it is much cheaper than any other material
called? • D. of its high temperature and power capabilities
• A. Transfer function 61. A transduction principle used primarily in optical sensors.
• B. Damping ratio • A. Photoconductive transduction
• C. Efficiency • B. Photovoltaic transduction
• D. Gain • C. Electromagnetic transduction
53. A diac is turned on by • D. Piezoelectric transduction
• A. breakover voltage 62. What is a solid state equivalent of a gas filled triode?
• B. gate current • A. Triac
• C. gate voltage • B. Thyristor
• D. anode current • C. SCR
54. An SCR whose state is controlled by the light falling upon • D. SCS
a silicon semiconductor layer of the device. 63. The supply voltage is generally _____ that of breakover
• A. SCS voltage in an SCR.
• B. GTO • A. equal to
• C. Thyristor • B. less than
• D. LASCR • C. greater than
55. A diac is simply • D. twice
• A. a single junction 64. The triac is fundamentally a/an _____ with a gate terminal
• B. a three junction device for controlling the turn-on conditions of the bilateral device in
either direction.
• C. a triac without a gate terminal
• A. SCR
• D. the SCR
56. What region lies between the peak point and valley point • B. Quadric
of UJT emitter characteristic? • C. Shockley diode
• A. Saturation • D. Diac
• B. Cut off 65. When the supply voltage exceeds the breakover voltage of
an SCR, it
• C. Negative resistance
• A. starts conducting
• D. Positive resistance
57. What refers to the application of electronic theory, • B. stops conducting
technology, instrumentation, and computing system to • C. conducts leakage current
biological research and medical problems? • D. conducts terminal current
• A. Medical electronics 66. The step response of a first order systems is given by
• B. Genetics electronics • A. y(t) = A0
• C. Biomedical engineering • B. y(t) = A0 + A1es1t + A2es2t +A3es3t
• D. Biomedical electronics • C. y(t) = A0 + A1es1t + A2es2t
58. Which device exhibits negative resistance region? • D. y(t) = A0 + A1es1t
• A. Diac 67. A feedback control system in which the controlled
• B. Triac variable is mechanical position.
• C. Transistor • A. Closed-loop feedback control system

• D. UJT • B. Open-loop feedback control system

59. The UJT operates in what region after peak point? • C. Servomechanism
• A. Cut off • D. Mechanical servomechanism
• B. Negative resistance 68. What is that voltage above when the SCR enters the
conduction region?
• C. Saturation
• A. Reverse breakover voltage
• D. Positive resistance
60. SCR is a rectifier constructed of silicon material. Silicon is • B. Forward breakover voltage
chosen because • C. Holding voltage
• A. it is the most abundant material • D. Trigger voltage
• B. of its strength and ruggedness
69. A locus or path of the roots traced out on the s-plane as a • B. Trans
parameter is changed. • C. Thy
• A. Root locus • D. Thyristor
• B. Hyperbola 78. What is the typical turn-on time of an SCR?
• C. Parabola • A. 1 μs
• D. Circle • B. 5 μs
70. A control system in which the output is related to the input • C. 10 μs
by device parameters only.
• D. 3 μs
• A. Open-loop control system 79. An SCR is a solid state equivalent of which tube?
• B. Closed-loop control system • A. Triode
• C. Servomechanism • B. Gas-filled triode
• D. Feedback control system • C. Pentode
71. What is that value of current below which the SCR
• D. Tetrode
switches from the conduction state to the forward blocking
region under stated conditions? 80. The gate of an SCR is _____ with respect to its cathode.
• A. positive
• A. Holding current
• B. at zero potential
• B. Forward current
• C. negative
• C. Reverse current
• D. at infinite potential
• D. Trigger current
72. Which is equivalent to a zener or avalanche region of the 81. A normally operated SCR has an anode which is _____
fundamental two-layer semiconductor diode? with respect to cathode.
• A. negative
• A. Reverse breakdown voltage
• B. positive
• B. Forward breakdown voltage
• C. at zero potential
• C. Breakdown voltage
• D. at infinite potential
• D. Breakover voltage
73. What is the required gate triggering current of GTO? 82. What device measures humidity directly with a single
sensing element?
• A. 20 mA
• A. Hygrometer
• B. 10 mA
• B. Tachometer
• C. 30 mA
• C. Venturi meter
• D. 40 mA
• D. Hydrometer
74. What is an automatic speed control device using the
centrifugal force on rotating flyweights as the feedback 83. What is one of the most widely used sensing elements
element? particularly for pressure ranges higher than 2 MPa?
• A. Bellows
• A. Regulator
• B. Bourdon tube
• B. Flywheel governor
• C. Capsule
• C. Field control
• D. Straight tube
• D. Throttle valve
75. What is the sensing element of acceleration transducer? 84. Which of the following can change the angle of
conduction in SCR?
• A. Damper
• A. Changing anode voltage
• B. Spring
• B. Changing gate voltage
• C. Seismic mass
• C. Reverse biasing the gate
• D. Crystal
• D. Changing cathode voltage
76. What are some areas where GTO is applicable?
85. An SCR is a member of what family?
• A. Counters
• A. Thyrector
• B. Pulse generators
• B. Thyratron
• C. Multivibrators
• C. Thyristor
• D. All of the above
• D. Transistor
77. What Greek word which means “switch”?
• A. Ristor
86. How many pn junction does SCRs have? • D. omnidirectional
• A. Two 95. When the firing angle of SCR is increased, its output
• B. Four • A. decreases

• C. Three • B. increases

• D. Five • C. remains unchanged

87. Which of the following is NOT a method primarily used • D. doubles
for density sensing? 96. When the SCR is OFF, the current in the circuit is
• A. Sonic • A. exactly zero
• B. Radiations • B. large leakage current
• C. Vibrating element • C. small leakage current
• D. Differential • D. thermal current
88. When SCR starts conducting, then _____ losses all 97. The SCR can exercise control over _____ of ac supply.
control. • A. positive or negative half-cycle
• A. gate • B. both positive and negative half-cycles
• B. anode • C. only positive half-cycle
• C. cathode • D. only negative half-cycle
• D. anode supply 98. What is the most widely used altitude and altitude-rate
89. An SCR when turned on has a typical voltage across of transducers?
• A. zero • A. Flowmeter
• B. 0.1 V • B. Psychometer
• C. infinite • C. Gyro
• D. 1 V • D. Gygrometer
90. The typical turn-off time of an SCR is about 99. What sensing element is typically made from a thin-walled
• A. 20 to 40 μs tube formed into deep convolutions and sealed at one end,
whose displacement can then be made to act on a transduction
• B. 5 to 40 μs
element?
• C. 1 to 5 μs
• A. Diaphragm
• D. 15 to 25 μs
• B. Bellow
91. An SCR is made of what material?
• C. Capsule
• A. Silicon
• D. Bourdon tube
• B. Carbon
100. The voltage across an SCR when it is turned on is about
• C. Germanium
• A.0.5 V
• D. Gallium-arsenide
• B. 0.1 V
92. ECG stands for electrocardiography while EEG stands
for? • C. 1 V

• A. electroextracellugraphy • D. 5 V
101. Referred to a bidirectional trigger diode.
• B. electroemyography
• a. Triac
• C. electroencephalography
• b. UJT
• D. electrovectorcardiography
93. Acceleration transducers are also called • c. BJT

• A. gyros • d. Diac
102. Voltage required to turn on any thyristor.
• B. force transducers
• a. Trigger voltage
• C. tachometers
• b. Breakover voltage
• D. accelerometers
94. When an SCR is combined to a switch, it is considered as • c. Barrier voltage
a _____ switch. • d. Supply voltage
• A. bidirectional
• B. mechanical
• C. unidirectional
103. Also known as a four-layer diode. 112. A UJT has η = 0.65 and is connected to a 20 V supply.
• a. Diac What is its VEB1?
• b. Shockley diode • a. 12 V

• c. Zener diode • b. 13.6 V

• d. FET • c. 12.7 V
104. The thyristor counterpart of the unijunction transistor. • d. 14 V
• a. UJT 113. The three terminal semiconductor device that acts in
either direction.
• b. PUT
• a. Triac
• c. SBS
• b. SCR
• d. SCS
105. Minimum current required to keep a thyristor “on”. • c. Diac

• a. Holding current • d. SCS

114. The P of PUT stands for
• b. Trigger current
• a. Programmable
• c. Supply current
• b. Performance
• d. Collector current
106. A unidirectional-three terminal device, the most popular • c. Peak
of thyristors. • d. Post
• a. SCS 115. The terminals of a UJT are
• b. Triac • a. Gate, Anode, Cathode

• c. UJT • b. Anode, Cathode

• d. SCR • c. Emitter, Base

107. The angle of an AC supply voltage during which an SCR • d. Emitter, Base1, Base2
is “off”. 116. The lowest current that can prevent the transition of a
• a. Conduction angle UJT from conduction to blocking region.
• b. Firing delay angle • a. Switching current

• c. Right angle • b. Emitter current

• d. Off angle • c. Valley current

108. Thyristors are most often used as • d. Peak current
• a. Switches 117. The SCS has how many gate terminals?
• b. Amplifiers • a. 0

• c. Buffers • b. 1

• d. Decoders • c. 2
109. The total internal series resistance of the UJT. • d. 3
• a. Bulk’s resistance 118. What device has two terminals connected in inverse-
parallel that pass in two directions?
• b. Total resistance
• a. Triac
• c. Interbase resistance
• b. Diac
• d. RIS
110. The most popular and typical breakover voltage of a diac. • c. Shockley

• a. 32 V • d. SCR
119. What is the breakover voltage of a PUT if it is connected
• b. 16 V
to a 15 V supply across the gate terminal?
• c. 8 V
• a. 10.7 V
• d. 4 V
• b. 23.7 V
111. The peak voltage of a PUT is
• c. 15.7 V
• a. VD + VBB
• d. 5.3 V
• b. VG + VBB
• c. VD + VG
• d. VBB
120. The gap between the forward blocking region and the • c. SCR
forward conduction region. • d. PUT
• a. Band gap 129. Which of the following describes a triac?
• b. Switching region • a. Conducts when not triggered
• c. Jump gap • b. Conducts when not triggered in both directions
• d. Negative resistance region • c. Conducts when triggered in one direction
121. The cathode of the PUT is the counterpart of which • d. Conducts when triggered in both direction
terminal in UJT? 130. Minimum anode current to hold a thyristor at conduction.
• a. Anode • a. Trigger
• b. Base2 • b. Maintaining current
• c. Emitter • c. Holding current
• d. Base1 • d. Threshold voltage
122. An electronic switch that has the highest single device 131. General term for semiconductor devices primarily used
current capacity and can withstand overloads better. as switches.
• a. Thyratrons • a. Shockley
• b. Ignitrons • b. Thyratron
• c. SCR • c. Thyristor
• d. Triac • d. Relay
123. Group of devices with 4 or more semiconductor layers. 132. A two-terminal, unidirectional thyristor.
• a. Transistors • a. DIAC
• b. Diodes • b. Shockley
• c. Thyristors • c. TRIAC
• d. Op-Amps • d. Diode
124. Identify which of the following is a three layer device. 133. A thyristor is basically ______.
• a. SCS • a. PNPN device
• b. Diac • b. A combination of diac and triac
• c. Triac • c. A set of SCRs
• d. PUT • d. A set of SCR, diac and triac
125. What device can be modeled by a diode and two 134. What is the PNPN device with two gates?
resistors?
• a. Diac
• a. BJT
• b. Triac
• b. DIAC
• c. SUS
• c. SCR
• d. SCS
• d. UJT 135. Which device incorporates a terminal for synchronizing
126. A junction that is formed by adding controlled amounts purposes?
of an impurity to the melt during crystal growth is termed as
• a. Diac
• a. Fused junction
• b. Triac
• b. Unijunction
• c. SUS
• c. Alloy junction
• d. SCR
• d. Doped junction 136. An SCR is a _______.
127. A triac is a ______.
• a. Unijunction device
• a. 2 terminal switch
• b. Device with three junctions
• b. 2 terminal bilateral switch
• c. Device with four junctions
• c. 3 terminal unilateral switch
• d. Device with two junctions
• d. 3 terminal bidirectional switch
128. A thyristor equivalent of a thyratron tube is _____.
• a. Diac
• b. Triac
137. A thyristor can be turned off 145. A series RC connected in parallel with an SCR to
• a. By reducing the anode current below the holding eliminate false triggering is the _______.
current value • a. Crowbar
• b. By reversing the anode voltage • b. Snubber
• c. Either a or b • c. Varistor
• d. Both a and b • d. Eliminator
138. Minimum duration of pulse triggering system for 146. Which are the three terminals of a TRIAC?
thyristors is ________. • a. Gate, anode1 and anode2
• a. At least 10 microseconds • b. Gate, source and sink
• b. At least 30 milliseconds • c. Base, emitter and collector
• c. At least 10 milliseconds • d. Emitter, base1 and base2
• d. At least 1 second 147. The term used to describe the process whereby two
139. A device that cannot be triggered by voltage of either transistors with positive feedback are used to simulate the
polarity is ________. action of the thyristor.
• a. Diac • a. Arcing
• b. Triac • b. Latching
• c. SCS • c. Damping
• d. All of the above • d. Switching
140. Technically, what is dicing means? 148. The minimum emitter to base voltage to trigger the UJT
• a. Process of joining two diacs is the ________.
• b. Circuit of reducing noise • a. Forward breakover voltage

• c. Device for reducing magnetic and radio • b. Trigger

interference • c. Breakdown voltage
• d. Process of breaking the silicon slice into chips • d. Peak voltage
141. The term used to describe the process whereby two 149. The ratio of the emitter to base1 resistance to the
transistors with positive feedback are used to simulate the interbase resistance of a UJT is called ________.
action of the thyristor. • a. Aspect ratio
• a. Arcing • b. Current gain
• b. Latching • c. Voltage gain
• c. Damping • d. Intrinsic standoff ratio
• d. Switching 150. For a UJT, it is the region between the peak and valley
142. It is the minimum anode current to hold a thyristor at points as seen in its characteristics curve.
conduction. • a. Active region
• a. Trigger • b. Negative resistance region
• b. Maintaining current • c. Trigger region
• c. Holding current • d. Saturation region
• d. Threshold voltage 151. This device is two zener diodes connected back to back
143. Electron tube containing mercury functioning as a in series and is used to support voltage surges and transients.
rectifier. • a. Thyristor
• a. Thyratron • b. Varactor
• b. Ignitron • c. Thyrector
• c. Thyrector • d. Phanatron
• d. SCR 152. Refers to the number of degrees of an AC cycle during
144. How do you stop the conduction during which the SCR is which the SCR is turned on.
also conducting? • a. Conduction angle
• a. Remove voltage gate • b. Firing delay angle
• b. Increase cathode voltage • c. Induction angle
• c. Interrupt anode current • d. ON angle
• d. Reduce gate current
153. A four-element solid state device that combines the • c. TRIAC
characteristics of a both diodes and transistors. • d. Diode
• a. Varactor 162. A DIAC is equivalent to inverse parallel combination of
• b. Zener diode • a. Shockley diodes
• c. Tunnel diode • b. Schottky
• d. SCR • c. BJT
154. Electron tube equivalent to solid state SCR. • d. SCR’s
• a. Triode 163. A TRIAC is equivalent to inverse parallel combination of
• b. VTVM • a. Shockley
• c. CRT • b. Schottky
• d. Thyratron • c. BJT
155. Find the two stable operating conditions of an SCR. • d. SCR’s
• a. Conducting and non-conducting 164. Which are the three terminals of a TRIAC?
• b. Oscillating and quiescent • a. Gate, anode1 and anode2
• c. NPN conduction and PNP conduction • b. Gate, source and sink
• d. Forward conducting and reverse conducting • c. Base, emitter and collector
156. How do you stop conduction during which SCR is also • d. Emitter, base1 and base2
conducting? 165. Which device can be modeled by a diode and two
• a. Remove voltage gate resistors?
• b. Increase cathode voltage • a. BJT
• c. Interrupt anode current • b. DIAC
• d. Reduce gate current • c. SCR
157. When an SCR is triggered or on conducting, its electrical • d. UJT
characteristics are similar to what other solid-state device (as 166. The minimum emitter to base 1 voltage to trigger the
measured between its cathode and anode)? UJT.
• a. The junction diode • a. Forward breakover voltage
• b. The varactor diode • b. Trigger
• c. The tunnel diode • c. Breakdown voltage
• d. The hotcarrier diode • d. Peak voltage
158. Which of the following does not have a base terminal? 167. The ratio of the emitter to base1 resistance to the
• a. UJT interbase resistance of a UJT.
• b. PNP • a. Aspect ratio
• c. SCR • b. Current gain
• d. NPN • c. Voltage gain
159. A series RC circuit that is connected in parallel with an • d. Intrinsic standoff ratio
SCR to eliminate false triggering. 168. For UJT, it is the region between the peak and valley
• a. Crowbar points.
• b. Snubber • a. Active region
• c. Varistor • b. Negative resistance region
• d. Eliminator • c. Trigger region
160. A circuit that protects a sensitive circuit from a sudden • d. Saturation region
increase in supply voltage. 169. Typical breakover voltage of an SBS.
• a. Crowbar • a. 2 V
• b. Snubber • b. 4 V
• c. Varistor • c. 8 V
• d. Eliminator • d. 16 V
161. A two-terminal, bidirectional thyristor.
• a. DIAC
• b. Shockley
170. The trigger current is applied to the… • c. Hold time
• a. Anode • d. Off period
• b. Gate 179. Heat in resistance welding is produced by the following
factors except one
• c. Cathode
• a. Time duration
• d. Base
171. The region where breakover voltage of the SBS drops to • b. Current
1 V instantaneously. • c. Electrical resistance
• a. Falldown region • d. Pressure applied
• b. Fallback region 180. Resistance welding machine component that holds the
workpieces.
• c. Breakback region
• a. Electrical circuit
• d. Breakdown region
172. The ratio of RB1 and RBB is called • b. Electrode system

• a. Intrinsic standoff ratio • c. Mechanical system

• b. Reuber’s ratio • d. None of the above

181. Resistance spot welding (RSW) machine type that is
• c. Common mode rejection ratio
controlled by hydraulic cylinders.
• d. Cat’s ratio
• a. Miniature welders
173. The time between the first application of electrode force
and the first application of welding current. • b. Rocker-arm welder

• a. Squeeze time • c. Press-type welder

• b. Weld time • d. Portable spot welder

182. Machine component made up of the transformer and the
• c. Hold time
current regulator.
• d. Off period
• a. Control system
174. Process wherein coalescence is produced by the heat
obtained from the resistance of the workpiece to the flow of • b. Electrical system
low voltage, high density electric current in a circuit. • c. Electrode system
• a. Forge welding • d. Mechanical system
• b. Resistance welding 183. Welder machine with capacities up to 500 kVa
• c. Ultrasonic welding • a. Miniature welders

• d. LBW • b. Rocker-arm welder

175. Time when electrode force is applied but the current is • c. Press-type welder
shut off. • d. Portable spot welder
• a. Off period 184. Regulates the time of the welding cycle.
• b. Hold time • a. Electrode
• c. Squeeze time • b. Current regulator
• d. Weld time • c. Control system
176. The time when electrode force is released. • d. Mechanical system
• a. Hold time 185. Welding machine use for large workpieces.
• b. Squeeze time • a. Miniature welders
• c. Off period • b. Rocker-arm welder
• d. Weld time • c. Press-type welder
177. The fusion of the grain structure of materials. • d. Portable spot welder
• a. Forge 186. Another name for hammer welding
• b. Weld • a. Fusion welding
• c. Recombination • b. RW
• d. Coalescence • c. Maul welding
178. Time when current is applied to the workpiece. • d. Forge welding
• a. Weld time
• b. Squeeze time
187. Referred to as a localized coalescence • d. Mixing
• a. Weld 196. Arc welding requires a voltage around _______.
• b. Mold • a. 60 – 100 V

• c. Cast • b. 150 -200 V

• d. Metal • c. 400 – 440 V

188. Part of the welding electric circuit that is used to produce • d. 1000 – 5000 V
high amperage current at low voltages. 197. During arc welding, the current is in the range of
• a. Capacitor _______.
• b. Voltage regulator • a. 1 – 5 A

• c. Transformer • b. 5 – 50 A

• d. The secondary circuit • c. 50 – 400 A

189. The overlapped RSW. • d. 500 – 4000 A
• a. RSEW (Resistance Seam Welding) 198. The body structure of the car is welded by ______.
• b. ORSW • a. Gas welding

• c. OSW • b. Spot welding

• d. USW • c. Induction welding

190. Spot welding are most commonly used in • d. Arc welding
• a. Ships 199. For inspection of welding defects in thick metals, which
of the following ray is used to photograph thick metals
• b. Automobiles
objects?
• c. Airplanes
• a. Gamma rays
• d. Rafts
• b. Cosmic rays
191. The last step in welding time control.
• c. Infrared rays
• a. Off period
• d. Ultraviolet rays
• b. Weld time
200. The voltage across an SCR when it is turned on is about
• c. Squeeze time
• a. 0.5 V
• d. Hold time
• b. 0.1 V
192. The relative maximum workpiece thickness where spot
welding can be used. • c. 1 V

• a. 0.5 in • d. 5 V
201. For an SCR, dv/dt protection is achieved through the use
• b. 1 in.
of:</>
• c. 1.5 in.
• A. RL in series with SCR
• d. 0.25 in.
• B. RC across SCR
193. Resistance welding was developed by this man in and
revolutionized the welding industry. • C. L in series with SCR

• a. Isaac Asimov • D. RC in series with SCR

202. A technique use to turn off a thyristor using an external
• b. Karel Capek
circuit which causes the anode to become negatively biased.
• c. Thomas Seebeck
• A. force commutation
• d. Elihu Thomson
• B. reverse triggering
194. The year when resistance welding was discovered.
• C. negative feedback
• a. 1935
• D. doping
• b. 1798
203. The turn-off time of thyristor is 30 m sec at 50°C. Its
• c. 1886 turn-off time at 100° is
• d. 1945 • A. same
195. It is the fusion or growing of the materials being • B. 15 m sec
together.
• C. 60 m sec
• a. Coalition
• D. 100 m sec
• b. Coincidence
• c. Coalescense
204. The peak and valley currents of the PUT are typically • B. Negative resistance
_____ those of a similarly rated UJT. • C. Saturation
• A. lower than • D. Positive resistance
• B. the same as 213. What is basically a two-terminal parallel-inverse
• C. higher than combination of semiconductor layers that permits triggering in
either direction?
• D. None of the above
205. What is a solid state equivalent of a gas filled triode? • A. DIAC

• A. Triac • B. TRIAC

• B. Thyristor • C. QUADRAC

• C. SCR • D. Shockley Diode

214. Which device does not have a gate terminal?
• D. SCS
206. The method(s) for turning off an SCR is (are) categorized • A. Triac
as _____. • B. SCR
• A. current interruption • C. FET
• B. forced commutation • D. Diac
• C. both current interruption and forced commutation 215. The four-layer devices with a control mechanism are
commonly referred to as _____.
• D. None of the above
207. In a certain UJT rB1 is 2.5 kΩ and rB2 = 4 kΩ. What is the • A. thyristors
intrinsic standoff ratio? • B. transistors
• A. 0.61538 • C. diodes
• B. 0.38461 • D. None of the above
• C. 2.6 216. What is that voltage above when the SCR enters the
conduction region?
• D. 0.8125
208. When SCR starts conducting, then _____ losses all • A. Reverse breakover voltage
control. • B. Forward breakover voltage
• A. gate • C. Holding voltage
• B. anode • D. Trigger voltage
• C. cathode 217. It is a three-terminal silicon diode with the ability to
control a large ac power with a small signal.
• D. anode supply
209. You have the schematic diagram of several types of • A. TRIAC
circuits. Which of these circuits most likely uses a triac? • B. SCR
• A. an oscillator • C. UJT
• B. an ac motor control • D. SCS
• C. a programmable oscillator 218. The smallest amount of current that the cathode-anode
can have, and still sustain conduction of an SCR is called the:
• D. an amplifier
210. Determine RB1 for a silicon PUT if it is determined that h • A. maximum forward current
= 0.84, VP = 11.2 V, and RB2 = 5 kΩ. • B. maximum forward gate current
• A. 12.65 kΩ • C. holding current
• B. 16.25 kΩ • D. reverse gate leakage current
• C. 20.00 kΩ 219. It is the minimum additional current that can make up for
any missing input (gate) current in order to keep the device
• D. 26.25 kΩ
ON.
211. Which of the following devices does not have a cathode
terminal? • A. leakage current

• A. SCR • B. ac current

• B. SCS • C. holding current

• C. TRIAC • D. switching current

• D. Shockley diode
212. The UJT operates in what region after peak point?
• A. Cut off
220. The PUT (programmable unijunction transistor) is • B. About 50 kHz
actually a type of: • C. About 250 kHz
• A. UJT thyristor • D. About 1 mHz
• B. FET device 229. The minimum operating voltage of the UJT is typically
• C. TRIAC _____ that of a similarly rated PUT.
• D. SCR • A. lower than
221. What is the typical value of the interbase resistance of • B. the same as
UJTs? • C. higher than
• A. 20 KΩ • D. None of the above
• B. Between 4 to 4 KΩ 230. A UJT is sometimes called a ____ diode.
• C. 4 KΩ • A. double-based
• D. Between 4 to 10 KΩ • B. single-based
222. Which of the following is a four-layer diode with an • C. a rectifier
anode gate and a cathode gate?
• D. a switching diode
• A. SCS 231. It is like a low current SCR with two gate terminals.
• B. SCR • A. UJT
• C. SBS • B. PUT
• D. SUS • C. SCR
223. SCR is a rectifier constructed of silicon material. Silicon
• D. SCS
is chosen because
232. What is the typical value of the reverse resistance of
• A. it is the most abundant material SCRs?
• B. of its strength and ruggedness • A. 1 Ω to 10 Ω
• C. it is much cheaper than any other material • B. 100 Ω to 1 kΩ
• D. of its high temperature and power capabilities • C. 1 kΩ to 50 kΩ
224. When the temperature increases, the intrinsic standoff
• D. 100 kΩ or more
ratio
233. Which of the following is the normal way to turn on a
• A. increases diac?
• B. decreases • A. By breakover voltage
• C. essentially constant • B. By gate voltage
• D. becomes zero • C. By gate current
225. SCRs have been designed to control powers as high as
• D. By anode current
_____, with individual ratings as high as _____ at _____.
234. In a SCR circuit, the angle of conduction can be changed
• A. 1800 MW, 10 A, 2000 V by changing
• B. 1800 MW, 2000 A, 10 V • A. anode voltage
• C. 10 MW, 2000 A, 1800 V • B. anode current
• D. 2000 MW, 10 A, 1800 V • C. forward current rating
226. An SCR is a member of what family?
• D. gate current
• A. Thyrector 235. The function of snubber circuit connected across the SCR
• B. Thyratron is to:
• C. Thyristor • A. Suppress dv/dt
• D. Transistor • B. Increase dv/dt
227. Which of the following can change the angle of • C. Decrease dv/dt
conduction in SCR?
• D. Decrease di/dt
• A. Changing anode voltage 236. An SCR is made of what material?
• B. Changing gate voltage • A. Silicon
• C. Reverse biasing the gate • B. Carbon
• D. Changing cathode voltage • C. Germanium
228. What is the frequency range of application of SCRs?
• D. Gallium-arsenide
• A. About 10 kHz
 • 245. An effect that reduces the possibility of accidental
237. The SCR can exercise control over _____ of ac supply. triggering of the SCS.
• A. positive or negative half-cycle • A. Miller effect
• B. both positive and negative half-cycles • B. Rate effect
• C. only positive half-cycle • C. End effect
• D. only negative half-cycle • D. Flywheel effect
238. Which of the following conditions is necessary for 246. An SCR whose state is controlled by the light falling
triggering system for thyristors? upon a silicon semiconductor layer of the device.
• A. It should be synchronized with the main supply • A. SCS
• B. It must use separate power supply • B. GTO
• C. It should provide a train of pulses • C. Thyristor
• D. None of these • D. LASCR
239. A normally operated SCR has an anode which is _____ 247. Power electronics deals with the control of ac power at
with respect to cathode. what frequencies essentially?
• A. negative • A. 20 KHz
• B. positive • B. 1000 KHz
• C. at zero potential • C. Frequencies less than 10 Hz
• D. at infinite potential • D. 60 Hz frequency
240. Which of the following devices has (have) four layers of 248. To turn on the UJT, the forward bias on emitter diode
semiconductor materials? should be _____ the peak point voltage.
• A. Silicon-controlled switch (SCS) • A. more than
• B. Gate turn-off switch (GTO) • B. less than
• C. Light-activated silicon-controlled rectifier • C. equal to
(LASCR) • D. twice
• D. All of the above 249. What is the resistance of a certain 4-layer diode in the
241. How many pn junction does SCRs have? forward-blocking region if VAK = 15V and IA = 1 uA
• A. Two • A. 15 Ω
• B. Four • B. 21.21 MΩ
• C. Three • C. 15 M Ω
• D. Five • D. 10.61 MΩ
242. The silicon-controlled switch (SCS) is similar in 250. What is the peak-point voltage for the UJT in problem 76
construction to the if VBB = 15V?
• A. triac. • A. 10.605
• B. diac. • B. 5.76912
• C. SCR. • C. 6.46915
• D. 4-layer diode. • D. 0.8125
243. Which of the following devices has nearly the same turn- 251. The SCR is turned-off when the anode current falls
on time as turn-off time? below
• A. SCR • A. forward current rating
• B. GTO • B. breakover voltage
• C. SCS • C. holding current
• D. LASCR • D. latching current
244. Which of the following is (are) the advantages of the 252. When an SCR is combined to a switch, it is considered as
SCS over a corresponding SCR? a _____ switch.
• A. Reduced turn-off time • A. bidirectional
• B. Increased control and triggering sensitivity • B. mechanical
• C. More predictable firing situation • C. unidirectional
• D. All of the above • D. omnidirectional
253. The p-type emitter of a UJT is _____ doped • B. 10 µs to 25 µs
• A. lightly • C. 5 µs to 8 µs
• B. moderately • D. 1 µs to 5 µs
• C. heavily 262. You need to design a relaxation oscillator circuit. The
most likely device to use might be
• D. not
254. An SCR is a _____ triggered device. • A. an SCR.

• A. current • B. a UJT.

• B. power • C. a triac.

• C. voltage • D. a 4-layer diode.

263. The ________ can be externally programmed to turn on
• D. noise
at a desired anode-to-gate voltage level.
255. Anode current in a thyristor is made up of:
• A. UJT
• A. Electrons only
• B. PUT
• B. Electrons or holes
• C. SCR
• C. Electrons and holes
• D. SCS
• D. Holes only
264. It is the minimum current which must pass through a
256. Once a DIAC is conducting, the only way to turn it off is circuit in order for it to remain in the 'ON' state.
with:
• A. leakage current
• A. a positive gate voltage
• B. ac current
• B. a negative gate voltage
• C. holding current
• C. low-current dropout
• D. switching current
• D. breakover
265. What is that value of current below which the SCR
257. The V-I characteristics for a triac in the first and third switches from the conduction state to the forward blocking
quadrants are essentially identical to those of _____ in the region under stated conditions?
quotation.
• A. Holding current
• A. SCR
• B. Forward current
• B. UJT
• C. Reverse current
• C. Transistor
• D. Trigger current
• D. SCS
266. A diac is turned on by
258. To turn off the SCR, which of the following is done?
• A. breakover voltage
• A. Reduce gate voltage to zero
• B. gate current
• B. Reverse bias the gate
• C. gate voltage
• C. Reduce anode voltage to zero
• D. anode current
• D. Reduce cathode voltage to zero
267. You have a light-dimmer circuit using an SCR. In testing
259. Your boss has asked you to recommend a thyristor that the circuit, you find that IG = 0 mA and the light is still on.
will enable you to turn it on with a pulse and also turn it off You conclude that the trouble might be one of the following:
with a pulse. Which of the following should you recommend?
• A. the SCR is open.
• A. an SCR
• B. the switch is faulty.
• B. an SCS
• C. the gate circuit is shorted.
• C. a PUT
• D. this is normal; nothing is wrong.
• D. a triac
268. Which equation defines the intrinsic standoff ratio (η) of
260. The current from that semiconductor device when it is UJTs?
reversed biased.
• A. RB1 / (RB1 + RB2)
• A. maximum forward current
• B. (RB1 + RB2) / RB1
• B. maximum forward gate current
• C. (RB1 + RB2) / RB2
• C. holding current
• D. RB1 + RB2
• D. leakage current
261. What is the range of the turn-on times in high-power
SCR devices?
• A. 30 µs to 100 µs
269. The voltage across an SCR when it is turned on is about • D. 3 μs
• A. 0.5 V 278. An SCR is a solid state equivalent of which tube?
• B. 0.1 V • A. Triode

• C. 1 V • B. Gas-filled triode

• D. 5 V • C. Pentode
270. The typical turn-off time of an SCR is about • D. Tetrode
• A. 20 to 40 μs 279. It is a special type of thyristor, which is a high-power
semiconductor device but are fully controllable switches
• B. 5 to 40 μs
which can be turned on and off by their third lead.
• C. 1 to 5 μs
• A. PUT
• D. 15 to 25 μs
• B. MCT
271. Which of the following devices has the smallest turn-off
time? • C. SCS

• A. SCR • D. GTO
280. When the temperature increases, the inter-base resistance
• B. GTO
of a UJT
• C. SCS
• A. Remains unchanged
• D. LASCR
• B. Increases
272. A triac is equivalent to two SCRs
• C. Decreases
• A. in parallel
• D. is zero
• B. in inverse-parallel
281. When checking a good SCR or TRIAC with an
• C. in series ohmmeter it will:
• D. in inverse-series • A. show high resistance in both directions
273. It is the phase angle relative to the power line at which • B. show low resistance with positive on anode and
point the gate is fired to commit the anode to conduct to the negative on cathode, and high resistance when reversed
cathode
• C. show high resistance with negative on anode and
• A. right angle
positive on cathode, and low resistance when reversed
• B. reverse angle
• D. show low resistance in both directions
• C. conduction angle 282. The UJT may be used as
• D. firing angle • A. an amplifier
274. It is the total resistance of the silicon bar from one end to • B. a rectifier
another with emitter terminal open.
• C. a sawtooth generator
• A. gate resistance
• D. a multivibrator
• B. base resistance
283. A resistor connected across the gate and cathode of an
• C. emitter resistance SCR in a circuit increases its
• D. interbase resistance • A. dv/dt rating
275. Holding current of a thyristor is: • B. Holding current
• A. Less than latching current
• C. Noise Immunity
• B. More than latching current
• D. Turn-off time
• C. Equal to latching current 284. AC power in a load can be controlled by connecting
• D. Zero • A. two SCRs in series
276. An SCR is a solid state equivalent of which tube? • B. two SCRs in parallel
• A. Triode
• C. two SCRs in parallel opposition
• B. Gas-filled triode
• D. two SCRs in series opposition
• C. Pentode 285. An SCR combines the feature of
• D. Tetrode • A. a rectifier and resistance
277. What is the typical turn-on time of an SCR? • B. a rectifier and capacitor
• A. 1 μs
• C. a rectifier and transistor
• B. 5 μs
• D. a rectifier and inductor
• C. 10 μs
286. It is voltage-controlled fully controllable thyristor similar • B. PUT
in operation with GTO but it has a voltage controlled insulated • C. DIAC
gate.
• D. SCS
• A. PUT 295. An SCR is made of silicon and not germanium because
• B. MCT silicon.
• C. UJT • A. is inexpensive
• D. MGT • B. has low leakage current
287. The three terminals of a triac are • C. is mechanically strong
• A. drain, source, gate • D. is tetravalent
• B. two main terminals and a gate terminal 296. The triac is fundamentally a/an _____ with a gate
• C. cathode, anode and gate terminal for controlling the turn-on conditions of the bilateral
device in either direction.
• D. anode, source, gate
288. A triac can pass a portion of _____ half cycle through the • A. SCR
load • B. Quadric
• A. only positive • C. Shockley Diode
• B. only negative • D. Diac
• C. both positive and negative 297. An opto-isolator contains _____.
• D. neither positive nor negative • A. an infrared LED
289. When the SCR is OFF, the current in the circuit is • B. a photodetector
• A. exactly zero • C. both an infrared LED and a photodetector
• B. large leakage current • D. None of the above
• C. small leakage current 298. Which of the following devices is unquestionably of the
greatest interest today?
• D. thermal current
290. What is a three terminal device used to control large • A. SCR
current to a load? • B. GTO
• A. SCR • D. LASCR
• B. SCS • D. SCS
• C. GTO 299. In a UJT maximum value of charging resistance is
associated with:
• D. Thyristor
291. What Greek word which means “switch”? • A. Peak point

• A. Ristor • B. Valley point

• B. Trans • C. Any point between peak and valley point

• C. Thy • D. After the valley point

300. When the firing angle of SCR is increased, its output
• D. Thyristor
292. The ________ can conduct current in either direction and • A. decreases
is turned on when a breakover voltage is exceeded. • B. increases
• A. SCR • C. remains unchanged
• B. Diac • D. doubles
• C. SCS
• D. Triac
293. A resistor connected across the gate and cathode of an
SCR increases its:
• A. Turn off time
• B. Holding current
• C. Noise immunity
• D. dv/dt rating
294. Like an SCR, it is also a four layer device but with a gate
connected to the N-region adjacent to the anode.
• A. TRIAC