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MITSUBISHI Nch POWER MOSFET

FS7UM-14A
HIGH-SPEED SWITCHING USE

FS7UM-14A OUTLINE DRAWING Dimensions in mm

10.5MAX. 4.5
1.3
r

3.2

7.0
16
φ 3.6

1.0

3.8MAX.
12.5MIN.
0.8

2.54 2.54 0.5 2.6

4.5MAX.
q w e

wr

q GATE
w DRAIN
q
e SOURCE
r DRAIN
¡VDSS ................................................................................ 700V
¡rDS (ON) (MAX) .............................................................. 1.82Ω e

¡ID ............................................................................................ 7A TO-220

APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol Parameter Conditions Ratings Unit


VDSS Drain-source voltage VGS = 0V 700 V
VGSS Gate-source voltage VDS = 0V ±30 V
ID Drain current 7 A
IDM Drain current (Pulsed) 21 A
PD Maximum power dissipation 125 W
Tch Channel temperature –55 ~ +150 °C
Tstg Storage temperature –55 ~ +150 °C
— Weight Typical value 2 g

Feb.1999

This datasheet has been downloaded from http://www.digchip.com at this page


MITSUBISHI Nch POWER MOSFET

FS7UM-14A
HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 700 — — V
V (BR) GSS Gate-source breakdown voltage IGS = ±100µA, VDS = 0V ±30 — — V
IGSS Gate-source leakage current VGS = ±25V, VDS = 0V — — ±10 µA
IDSS Drain-source leakage current VDS = 700V, VGS = 0V — — 1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 V
rDS (ON) Drain-source on-state resistance ID = 3A, VGS = 10V — 1.40 1.82 Ω
VDS (ON) Drain-source on-state voltage ID = 3A, VGS = 10V — 4.20 5.46 V
yfs Forward transfer admittance ID = 3A, VDS = 10V 3.6 6.0 — S
Ciss Input capacitance — 1050 — pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz — 100 — pF
Crss Reverse transfer capacitance — 24 — pF
td (on) Turn-on delay time — 20 — ns
tr Rise time VDD = 200V, ID = 3A, VGS = 10V, — 22 — ns
td (off) Turn-off delay time RGEN = RGS = 50Ω — 110 — ns
tf Fall time — 35 — ns
VSD Source-drain voltage IS = 3A, VGS = 0V — 1.0 1.5 V
Rth (ch-c) Thermal resistance Channel to case — — 1.0 °C/W

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA


200 102
7
5
POWER DISSIPATION PD (W)

3
DRAIN CURRENT ID (A)

160
2
tw = 10ms
101
120 7
5 100ms
3
2
80 1ms
100
7 TC = 25°C
5 Single Pulse 10ms
40
3
2 DC 100ms

0 10–1 0
0 50 100 150 200 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS


(TYPICAL) (TYPICAL)

20 10
VGS = 20V PD = 125W
PD = 125W VGS = 20V
10V 10V
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

16 8
6V

12 6
5V

8 4
5V
4.5V
4 2
4V
4V
0 0
0 10 20 30 40 50 0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

Feb.1999
MITSUBISHI Nch POWER MOSFET

FS7UM-14A
HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.


GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
50 5
TC = 25°C
Pulse Test
DRAIN-SOURCE ON-STATE

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
40 4
VOLTAGE VDS (ON) (V)

30 ID = 14A 3 VGS = 10V

20V
20 2

7A
10 1
3A

0 0
0 4 8 12 16 20 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

FORWARD TRANSFER ADMITTANCE


TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
20 101
TC = 25°C VDS = 10V
VDS = 50V
7 Pulse Test TC = 25°C
Pulse Test 5
DRAIN CURRENT ID (A)

16
FORWARD TRANSFER
ADMITTANCE yfs (S)

75°C
3 125°C
2
12
100
8 7
5

3
4
2

0 10–1 –1
0 4 8 12 16 20 10 2 3 5 7 100 2 3 5 7 101

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
7 103
5 Tch = 25°C
7 VDD = 200V
3 5
2 VGS = 10V
SWITCHING TIME (ns)

Ciss RGEN = RGS = 50Ω


Ciss, Coss, Crss (pF)

103 3
CAPACITANCE

7 2
5
3 td(on)
2 102
7
102
7 Coss 5 tr
5
3 td(off)
3
2 Tch = 25°C 2
f = 1MHZ Crss tf
101 VGS = 0V
7 101 –1
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 10 2 3 5 7 100 2 3 5 7 101

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)

Feb.1999
MITSUBISHI Nch POWER MOSFET

FS7UM-14A
HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE


VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
20 20
Tch = 25°C VGS = 0V
GATE-SOURCE VOLTAGE VGS (V)

ID = 7A Pulse Test

SOURCE CURRENT IS (A)


16 16
VDD = 250V
TC = 125°C
12 12

75°C
400V
8 8
600V
25°C

4 4

0 0
0 10 20 30 40 50 0 0.8 1.6 2.4 3.2 4.0

GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)

ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.


DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)

CHANNEL TEMPERATURE CHANNEL TEMPERATURE


(TYPICAL) (TYPICAL)
101 5.0
VGS = 10V VDS = 10V
7 ID = 1/2ID ID = 1mA
GATE-SOURCE THRESHOLD

5 Pulse Test
4.0
VOLTAGE VGS (th) (V)

3
2
3.0
100
7 2.0
5

3
1.0
2

10–1 0
–50 0 50 100 150 –50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)

BREAKDOWN VOLTAGE VS.


DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)


DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)

CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE


(TYPICAL) CHARACTERISTICS
1.4 101
VGS = 0V 7
ID = 1mA 5
1.2 3
2
D = 1.0
100
1.0 7 0.5
5
3 0.2
2 0.1
0.8
10–1 0.05
7 0.02
5
0.6 0.01
3
2 Single Pulse

0.4 10–2
–50 0 50 100 150 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102

CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s)

Feb.1999

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