Beruflich Dokumente
Kultur Dokumente
FS7UM-14A
HIGH-SPEED SWITCHING USE
10.5MAX. 4.5
1.3
r
3.2
7.0
16
φ 3.6
1.0
3.8MAX.
12.5MIN.
0.8
4.5MAX.
q w e
wr
q GATE
w DRAIN
q
e SOURCE
r DRAIN
¡VDSS ................................................................................ 700V
¡rDS (ON) (MAX) .............................................................. 1.82Ω e
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
Feb.1999
FS7UM-14A
HIGH-SPEED SWITCHING USE
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 700 — — V
V (BR) GSS Gate-source breakdown voltage IGS = ±100µA, VDS = 0V ±30 — — V
IGSS Gate-source leakage current VGS = ±25V, VDS = 0V — — ±10 µA
IDSS Drain-source leakage current VDS = 700V, VGS = 0V — — 1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 V
rDS (ON) Drain-source on-state resistance ID = 3A, VGS = 10V — 1.40 1.82 Ω
VDS (ON) Drain-source on-state voltage ID = 3A, VGS = 10V — 4.20 5.46 V
yfs Forward transfer admittance ID = 3A, VDS = 10V 3.6 6.0 — S
Ciss Input capacitance — 1050 — pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz — 100 — pF
Crss Reverse transfer capacitance — 24 — pF
td (on) Turn-on delay time — 20 — ns
tr Rise time VDD = 200V, ID = 3A, VGS = 10V, — 22 — ns
td (off) Turn-off delay time RGEN = RGS = 50Ω — 110 — ns
tf Fall time — 35 — ns
VSD Source-drain voltage IS = 3A, VGS = 0V — 1.0 1.5 V
Rth (ch-c) Thermal resistance Channel to case — — 1.0 °C/W
PERFORMANCE CURVES
3
DRAIN CURRENT ID (A)
160
2
tw = 10ms
101
120 7
5 100ms
3
2
80 1ms
100
7 TC = 25°C
5 Single Pulse 10ms
40
3
2 DC 100ms
0 10–1 0
0 50 100 150 200 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
20 10
VGS = 20V PD = 125W
PD = 125W VGS = 20V
10V 10V
DRAIN CURRENT ID (A)
16 8
6V
12 6
5V
8 4
5V
4.5V
4 2
4V
4V
0 0
0 10 20 30 40 50 0 4 8 12 16 20
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7UM-14A
HIGH-SPEED SWITCHING USE
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
40 4
VOLTAGE VDS (ON) (V)
20V
20 2
7A
10 1
3A
0 0
0 4 8 12 16 20 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
16
FORWARD TRANSFER
ADMITTANCE yfs (S)
75°C
3 125°C
2
12
100
8 7
5
3
4
2
0 10–1 –1
0 4 8 12 16 20 10 2 3 5 7 100 2 3 5 7 101
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
7 103
5 Tch = 25°C
7 VDD = 200V
3 5
2 VGS = 10V
SWITCHING TIME (ns)
103 3
CAPACITANCE
7 2
5
3 td(on)
2 102
7
102
7 Coss 5 tr
5
3 td(off)
3
2 Tch = 25°C 2
f = 1MHZ Crss tf
101 VGS = 0V
7 101 –1
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 10 2 3 5 7 100 2 3 5 7 101
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7UM-14A
HIGH-SPEED SWITCHING USE
ID = 7A Pulse Test
75°C
400V
8 8
600V
25°C
4 4
0 0
0 10 20 30 40 50 0 0.8 1.6 2.4 3.2 4.0
5 Pulse Test
4.0
VOLTAGE VGS (th) (V)
3
2
3.0
100
7 2.0
5
3
1.0
2
10–1 0
–50 0 50 100 150 –50 0 50 100 150
0.4 10–2
–50 0 50 100 150 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Feb.1999