Beruflich Dokumente
Kultur Dokumente
Plastic Medium-Power
Complementary Silicon
www.onsemi.com
Transistors
Designed for general−purpose amplifier and low−speed switching DARLINGTON
applications. 2 AMPERE
Features COMPLEMENTARY SILICON
• High DC Current Gain − POWER TRANSISTORS
hFE = 2500 (Typ) @ IC 60−80−100 VOLTS, 50 WATTS
= 1.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc MARKING
VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115 DIAGRAM
= 80 Vdc (Min) − TIP111, TIP116
= 100 Vdc (Min) − TIP112, TIP117 4
• Low Collector−Emitter Saturation Voltage − TO−220AB
VCE(sat) = 2.5 Vdc (Max) @ IC CASE 221A TIP11xG
= 2.0 Adc STYLE 1 AYWW
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors STYLE 1:
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MAXIMUM RATINGS
TIP110, TIP111, TIP112,
Rating Symbol TIP115 TIP116 TIP117 Unit
Collector−Emitter Voltage VCEO 60 80 100 Vdc
Collector−Base Voltage VCB 60 80 100 Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC 2.0 Adc
− Peak 4.0
Base Current IB 50 mAdc
Total Power Dissipation @ TC = 25°C PD 50 W
Derate above 25°C 0.4 W/°C
Total Power Dissipation @ TA = 25°C PD 2.0 W
Derate above 25°C 0.016 W/°C
Unclamped Inductive Load Energy − Figure 13 E 25 mJ
Operating and Storage Junction TJ, Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc
(IC = 30 mAdc, IB = 0) TIP110, TIP115 60 −
TIP111, TIP116 80 −
TIP112, TIP117 100 −
Collector Cutoff Current ICEO mAdc
(VCE = 30 Vdc, IB = 0) TIP110, TIP115 − 2.0
(VCE = 40 Vdc, IB = 0) TIP111, TIP116 − 2.0
(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117 − 2.0
Collector Cutoff Current ICBO mAdc
(VCB = 60 Vdc, IE = 0) TIP110, TIP115 − 1.0
(VCB = 80 Vdc, IE = 0) TIP111, TIP116 − 1.0
(VCB = 100 Vdc, IE = 0) TIP112, TIP117 − 1.0
Emitter Cutoff Current IEBO − 2.0 mAdc
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 1.0 Adc, VCE = 4.0 Vdc) 1000 −
(IC = 2.0 Adc, VCE = 4.0 Vdc) 500 −
Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) − 2.5 Vdc
Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25 − −
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117 − 200
TIP110, TIP111, TIP112 − 100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
www.onsemi.com
2
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
COLLECTOR COLLECTOR
BASE BASE
EMITTER EMITTER
ORDERING INFORMATION
Device Package Shipping
TIP110 TO−220 50 Units / Rail
TIP110G TO−220 50 Units / Rail
(Pb−Free)
TA TC
PD, POWER DISSIPATION (WATTS)
3.0 60
2.0 40
TC
1.0 20
TA
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
www.onsemi.com
3
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
4.0
VCC VCC = 30 V IB1 = IB2
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V ts IC/IB = 250 TJ = 25°C
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA RC
2.0
MSD6100 USED BELOW IB ≈ 100 mA SCOPE
TUT
t, TIME (s)
V2 RB tf
μ
approx 1.0
+8.0 V 0.8
D1 ≈ 8.0 k tr
51 ≈ 60
0 0.6
V1
approx +4.0 V 0.4
-12 V 25 ms for td and tr, D1 is disconnected td @ VBE(off) = 0
and V2 = 0, RB and RC are varied PNP
tr, tf ≤ 10 ns to obtain desired test currents. NPN
DUTY CYCLE = 1.0% 0.2
For NPN test circuit, reverse diode, 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
polarities and input pulses.
IC, COLLECTOR CURRENT (AMP)
1.0
r(t), TRANSIENT THERMAL RESISTANCE
0.7
D = 0.5
0.5
0.3
(NORMALIZED)
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 2.5°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02
0.01 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
www.onsemi.com
4
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
10 10
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Capacitance
www.onsemi.com
5
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
NPN PNP
TIP110, 111, 112 TIP115, 116, 117
6.0 k 6.0 k
TJ = 125°C VCE = 3.0 V VCE = 3.0 V
4.0 k 4.0 k TJ = 125°C
3.0 k 3.0 k
hFE , DC CURRENT GAIN
-55°C
-55°C
1.0 k 1.0 k
800 800
600 600
400 400
300 300
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.2 2.2
1.8 1.8
1.4 1.4
1.0 1.0
0.6 0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
2.2 2.2
TJ = 25°C TJ = 25°C
1.8 1.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0 1.0
VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250
0.6 0.6
0.2 0.2
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages
www.onsemi.com
6
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
NPN PNP
TIP110, 111, 112 TIP115, 116, 117
+0.8 +0.8
θV, TEMPERATURE COEFFICIENTS (mV/°C)
-4.8 -4.8
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
105 105
REVERSE FORWARD REVERSE FORWARD
104 104
IC, COLLECTOR CURRENT (A)
102 102
TJ = 150°C
TJ = 150°C
101 101
100°C
100 100°C 100
25°C 25°C
10-1 10-1
-0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4
VBE, BASE‐EMITTER VOLTAGE (VOLTS) VBE, BASE‐EMITTER VOLTAGE (VOLTS)
www.onsemi.com
7
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
www.onsemi.com TIP110/D
8