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1. This problem set for a materials engineering course contains 10 questions about crystal structures, lattice vectors, Brillouin zones, symmetry operations, quantum wells, effective mass, density of states, and band structures.
2. Questions 1-3 deal with crystal structures including calculating the APF of diamond cubic, determining lattice vectors and unit cell volume of hexagonal close packed, and identifying the symmetry operations and axes of an octahedral point group.
3. Questions 4-6 calculate wavefunctions, energy levels, and velocities of particles confined in 1D infinite potential quantum wells of different widths using the effective mass approximation.
4. Questions 7-10 determine density of states, effective mass, electron distribution functions,
1. This problem set for a materials engineering course contains 10 questions about crystal structures, lattice vectors, Brillouin zones, symmetry operations, quantum wells, effective mass, density of states, and band structures.
2. Questions 1-3 deal with crystal structures including calculating the APF of diamond cubic, determining lattice vectors and unit cell volume of hexagonal close packed, and identifying the symmetry operations and axes of an octahedral point group.
3. Questions 4-6 calculate wavefunctions, energy levels, and velocities of particles confined in 1D infinite potential quantum wells of different widths using the effective mass approximation.
4. Questions 7-10 determine density of states, effective mass, electron distribution functions,
1. This problem set for a materials engineering course contains 10 questions about crystal structures, lattice vectors, Brillouin zones, symmetry operations, quantum wells, effective mass, density of states, and band structures.
2. Questions 1-3 deal with crystal structures including calculating the APF of diamond cubic, determining lattice vectors and unit cell volume of hexagonal close packed, and identifying the symmetry operations and axes of an octahedral point group.
3. Questions 4-6 calculate wavefunctions, energy levels, and velocities of particles confined in 1D infinite potential quantum wells of different widths using the effective mass approximation.
4. Questions 7-10 determine density of states, effective mass, electron distribution functions,
1. Prove that the APF of the diamond cubic structure is 0.34.
2. Consider the simple hexagonal crystal (Fig. 1): a. Give the primitive lattice vectors of this lattice. b. Solve for the volume of its primitive unit cell using its primitive lattice vectors. c. Show that the reciprocal lattice of the hexagonal crystal is hexagonal. 3. A cubic crystal system exhibiting an octahedral symmetry generates 24 elements in a unit cell. a. Enumerate the symmetry operations that comprise this symmetry. b. Draw all the symmetry axes of the octahedral point group in a cubic crystal. 4. Given that the wavefunction of a particle in a 1D infinite potential well is: n𝜋x 𝝍(𝑥) = Asin ( ) a 2 Prove that 𝐴 = √𝑎 5. A particle with mass 6.65 x 10^-27 kg is confined to an infinite potential well of width L. The energy of the third level is 2.00 x 10^-24 J. Calculate the value of L. 6. An electron is confined to a 1 micron layer of silicon. Assuming that the semiconductor can be adequately described by a 1D quantum well with infinite walls. a. Calculate the three lowest energy levels within the material (in terms of eV). b. Suppose that the energy can be interpreted as the kinetic energy of the electron, what is the corresponding electron velocity for lowest energy level? Suppose effective mass is 0.26*(rest mass of electron) 7. Calculate the number of states per unit energy in a 100 by 100 by 10 nm piece of silicon (Suppose effective mass is 1.08*[rest mass of electron]) 100 meV above the conduction band edge. Write the results in units of eV-1. 8. For some materials, the band structure of the conduction band around k=0 can be represented by: ħ2 𝑘 2 𝑎2 2 𝐸(𝑘) = (1 − 𝑘 ) 2𝑚𝑎2 2𝜋 2 Determine the effective mass of the electron. 9. Calculate the energy dependence of the electron distribution function at T = 0 K, 300 K and 900 K assuming Fermi energy is 2.5 eV. 10. The band structure of the cubic form of SiC is shown in Figure 2. The crystal structure of this SiC is zinc blende. a. Is SiC a direct or indirect band-gap semiconductor? b. Determine the band gap of SiC. c. Sketch the First Brillouin Zone of FCC. Label the points Г, K, X and L as well as the Σ, Δ and Λ directions.