RcaPowerDevicesDataBook1978 Text

Power
SSD-220B
1
RCA
Power Devices
This DATABOOK contains com- Table of Contents Page
plete technical information on the
full line of RCA solid-state power Index to Devices . 3
devices: power transistors, rf power Power-Transistor Selection Charts 8
transistors, power hybrid circuits,
Audio Transistors 17
triacs, SCR's, diacs, silicon rectifiers,
and rectifier assemblies. A
complete Power Hybrid Comparison Chart 18
index of these types is included on RF Power Transistors Selection Charts 19
the following pages. Triac Product Matrix 20
The index to devices is followed SCR Product Matrix 23
by a series of product selection ITR Product Matrix 24
charts that provide a quick re-
ference to key parameters and de-
GTO Product Matrix 25
vice packages to facilitate type se- Diac Product Matrix 25
lection. A cross-reference guide then Rectifier Product Matrix 25
indicates recommended RCA re- Power-Devices Cross-Reference Guide 26
placements for more than 2000 Operating Considerations 46
popular industry types. Next, gener-
Terms and Symbols 50
al operating considerations for solid-
state power devices are discussed, Power Transistors — Technical Data 53
and symbols and special terms used RF Power Transistors — Technical Data 417
to characterize these devices are Power Hybrid Circuits - Technical Data 45
listed. Triacs — Technical Data 457
The DATABOOK also contains
Silicon Controlled Rectifiers — Technical Data 513
eight data sections that provide de-
tailed ratings and characteristics for
Gate-Turn-off SCR's (GTO's) - Technical Data 569
each of the various types of devices. Diacs — Technical Data 572
Data pages for individual devices are Rectifiers — Technical Data 575
given as nearly as possible in alpha- RCA High-Reliability Solid-State Power Devices 579
numerical sequence of the basic Appendix:
family type numbers. Because many
General Characteristics, Test Circuits, and Waveforms . . . 586
devices may be included in the same
basic family, individual type num- Dimensional Outlines 595
bers are not necessarily in sequence. Suggested Hardware and Mounting Arrangements .... 603
If you don't find a type number Lead Forms for RCA Plastic Power Packages 606
where you expect it to be, check Handling and Mounting of RCA Molded-Plastic
the Index to Devices.
Transistors and Thyristors 609
General information such as test
Application-Note Abstracts 613
circuits and waveforms, dimensional
outlines, suggested mounting ar- RCA Sales Offices, Manufacturers' Representatives, and
rangements, and lead forms for Authorized Distributors 617
plastic packages are included in an
Appendix at the back of the book.
The Appendix also includes ab-
stracts of relevant RCA application
notes. The final pages contain listings
of RCA sales offices, manufacturers'
Solid Brussels Buenos Aires Hamburg Madrid Mexico City
• • • ' •
Milan
representatives, and authorized dis- Montreal Paris Sao Paulo Somerville N J Stockholm
• • • •
tributors. State Sunbury-pn-Thames Taipei Tehran Tokyo

• ' •
Information, furnished by RCA is believed to be accurate and reliable.
However, no responsibility is assumed by RCA for its use; nor for any
infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any
patent or patent rights of RCA.
Copyright 1978 by RCA Corporation

(All rights reserved under Pan-American
Copyright Convention)
Trademark(s) ^ Registered
Marca(s) Registrada(s)
Printed in USA/7-78
Index to Dev
Type of Bulletin Type of Bulletin Type of Bulletin
Type No. Page Device File No. Type No. Page Device File No. Type No. Page Device File No.
1N248C 576 R 6 2N1479* 60 PT 135 2N3651 564 SCR 408

1N249C 576 R 6 2N1480* 60 PT 135 2N3652 564 SCR 408
1N250C 576 R 6 2N1481* 60 PT 135 2N3653 564 SCR 408
1N1183A 576 R 38 2N1482* 60 PT 135 2N3654 564 SCR 724
1N1184A 576 R 38 2N1483* 65 PT 137 2N3655 564 SCR 724
1N1186A 576 R 38 2N1484* 65 PT 137 2N3656 564 SCR 724
1N1187A 576 R 38 2N1485* 65 PT 137 2N3657 564 SCR 724
1N1188A 576 R 38 2N1486* 65 PT 137 2N3658 564 SCR 724
1N1189A 576 R 38 2N1487* 67 PT 139 2N3668 541 SCR 116
1N1190A 576 R 38 2N1488* 67 PT 139 2N3669 541 SCR 116
1N1195A 576 R 6 2N1489* 67 PT 139 2N3670 541 SCR 116
1N1196A 576 R 6 2N1490* 67 PT 139 2N3715 99 PT 1058
1N1197A 576 R 6 2N1613 54 PT 106 2N3716 99 PT 1058
1N1198A 576 R 6 2N1700 60 PT 141 2N3733 425 RF 72
1N1199A 576 R 20 2N1701 65 PT 141 2N3771* 101 PT 974
1N1200A 576 R 20 2N1702 67 PT 141 2N3772* 101 PT 974
1N1202A 576 R 20 2N1711 54 PT 26 2N3773 105 PT 526
1N1203A 576 R 20 2N1842A 556 SCR 28 2N3791 109 PT 1059
1N1204A 576 R 20 2N1843A 556 SCR 28 2N3792 109 PT 1059
1N1205A 576 R 20 2N1844A 556 SCR 28 2N3839 426 RF 229
1N1206A 576 R 20 2N1845A 556 SCR 28 2N3866* 427 RF 80
1N1341B 576 R 58 2N1846A 556 SCR 28 2N3870 553 SCR 578
1N1342B 576 R 58 2N1847A 556 SCR 28 2N3871 553 SCR 578
1N1344B 576 R 58 2N1848A 556 SCR 28 2N3872 553 SCR 578
1N1345B 576 R 58 2N1849A 556 SCR 28 2N3873 553 SCR 578
1N1346B 576 R 58 2N1850A 556 SCR 28 2N3878 111 PT 766
1N1347B 576 R 58 2N1893 54 PT 34 2N3879 111 PT 766
1N1348B 576 R 58 2N2102 54 PT 106 2N3896 553 SCR 578
1N3879 577 R 726 2N2270 54 PT 24 2N3897 553 SCR 578
1 N3880 577 R 726 2N2405 54 PT 34 2N3898 553 SCR 578
1N388h 577 R 726 2N2857* 418 RF 61 2N3899 553 SCR 578
1N3882 577 R 726 2N2876 419 RF 32 2N4012 428 RF 90
1 N3883 577 R 726 2N3053 54 PT 960 2N4036 115 PT 216
1 N3889 577 R 727 2N2053A 54 PT 960 2N4037 115 PT 216
1 N3890 577 R 727 2N3054 69 PT 527 2N4063 84 PT 64
1N3891 577 R 727 2N3055 73 PT 994 2N4064 84 PT 64
1N3892 577 R 727 2N3055 77 PT 1077 2N4101 523 SCR 114
1N3893 577 R 727 (Hometaxial) 2N4102 523 SCR 114
1 N3899 578 R 728 2N3228 523 SCR 114 2N4103 541 SCR 116
1 N3900 578 R 728 2N3229* 420 RF 50 2N4231A 118 PT 1102
1N3901 578 R 728 2N3263 82 PT 54 2N4232A 118 PT 1102
1 N3902 578 R 728 2N3264 82 PT 54 2N4233A 118 PT 1102
1 N3903 578 R 728 2N3265 82 PT 54 2N4240 96 PT 138
1N3909 578 R 729 2N3266 82 PT 54 2N4314 115 PT 216
1N3910 578 R 729 2N3375* 421 RF 386 2N4347 91 PT 528
1N3911 578 R 729 2N3439* 84 PT 64 2N4348 105 PT 526
1N3912 578 R 729 2N3440* 84 PT 64 2N4427 429 RF 228
1N3913 578 R 729 2N3441* 87 PT 529 2N4440* 430 RF 217
2N681 556 SCR 96 2N3442* 91 PT 528 2N4904 121 PT 1068
2N682* 556 SCR 96 2N3478 423 RF 77 2N4905 121 PT 1068
2N683* 556 SCR 96 2N3525 523 SCR 114 2N4906 121 PT 1068
2N684* 556 SCR 96 2N3528 523 SCR 114 2N4913 123 PT 1067
2N685* 556 SCR 96 2N3529 523 SCR 114 2N4914 123 PT 1067
2N686 556 SCR 96 2N3553* 421 RF 386 2N4915 123 PT 1067
2N687* 556 SCR 96 2N3583 96 PT 138 2N4932 431 RF 249
2N688* 556 SCR 96 2N3584* 96 PT 138 2N4933 431 RF 249
2N689* 556 SCR 96 2N3585* 96 PT 138 2N5038* 125 PT 698
2N690* 556 SCR 96 2N3600 424 RF 83 2N5039* 125 PT 698
2N697 54 PT 16 2N3632 421 RF 386 2N5050 130 PT 1098
2N699 54 PT 22 2N3650 564 SCR 408 2N5051 130 PT 1098
Index to Devices
2N5052 130 PT 1098 2N5782 158 PT 413 2N6251 204 PT 523
2N5070 432 RF 268 2N5783 158 PT 413 2N6253 77 PT 1077
2N5071* 433 RF 269 2N5784 158 PT 413 2N6254 77 PT 1077
2N5090 434 RF 270 2N5785 158 PT 413 2N6257 101 PT 974
2N5102 435 RF 279 2N5786 158 PT 413 2N6259 105 PT 526
2N5109* 436 RF 281 2N5806 503 TRI 913 2N6260 69 PT 527
2N5179 437 RF 288 2N5807 503 TRI 913 2N6261 69 PT 527
2N5180 439 RF 289 2N5808 503 TRI 913 2N6262 91 PT 528
2N5202 111 PT 766 2N5809 503 TRI 913 2N6263 87 PT 529
2N5239 132 PT 321 2N5838* 162 PT 410 2N6264 87 PT 529
2N5240 132 PT 321 2N5839* 162 PT 410 2N6282 207 PT 1001
2N5293 135 PT 322 2N5840* 162 PT 410 2N6283 207 PT 1001
2N5294 135 PT 322 2 N 5869 165 PT 1070 2N6284 207 PT 1001
2N5295 135 PT 322 2N5870 165 PT 1070 2N6285 207 PT 1001
2N5296 135 PT 322 2N5871 167 PT 1066 2 N 6286 207 PT 1001
2N5297 135 PT 322 2N5872 167 PT 1066 2N6287 207 PT 1001
2N5298 135 PT 322 2N5873 167 PT 1066 2N6288 190 PT 676
2N5301 139 PT 1029 2 N 5874 167 PT 1066 2N6289 190 PT 676
2N5302 139 PT 1029 2N5875 169 PT 1065 2N6290 190 PT 676
2N5303 139 PT 1029 2N5876 169 PT 1065 2N6291 190 PT 676
2N5320 142 PT 325 2N5877 169 PT 1065 2N6292 190 PT 676
2N5321 142 PT 325 2IM5878 169 PT 1065 2N6293 190 PT 676
2N5322 142 PT 325 2N5879 171 PT 1064 2 N 6300 210 PT 1095
2N5323 142 PT 325 2N5880 171 PT 1065 2IM6301 210 PT 1095
2N5415* 145 PT 336 2N5881 171 PT 1065 2N6306 212 PT 885
2N5416* 145 PT 336 2 N 5882 171 PT 1065 2N6307 212 PT 885
2N5441 503 TRI 593 2N5885 173 PT 1041 2 N 6308 212 PT 885
2N5442 503 TRI 593 2N5886 173 PT 1041 2N6312 118 PT 1102
2N5443 503 TRI 593 2N5913 440 RF 423 2N6313 118 PT 1102
2N5444 503 TRI 593 2N5954 175 PT 675 2N6314 118 PT 1102
2N5445 503 TRI 593 2N5955 175 PT 675 2N6326 215 PT 1040
2N5446 503 TRI 593 2N5956 175 PT 675 2N6327 215 PT 1040
2N5490 148 PT 353 2N6032 180 PT 462 2N6342A 493 TRI 1084
2N5491 148 PT 353 2N6033 180 PT 462 2N6343A 493 TRI 1084
2N5492 148 PT 353 2N6055 217 PT 563 2N6344A 493 TRI 1084
2N5493 148 PT 353 2N6056 217 PT 563 2N6345A 493 TRI 1084
2N5494 148 PT 353 2N6077 183 PT 492 2N6346A 493 TRI 1084
2N5495 148 PT 353 2N6078 183 PT 492 2 N 6347 A 493 TRI 1084
2N5496 148 PT 353 2N6079 183 PT 492 2N6348A 493 TRI 1084
2N5497 148 PT 353 2N6098 187 PT 485 2N6349A 493 TRI 1084
2N5567 480 TRI 457 2N6099 187 PT 485 2N6354 125 PT 582
2N5568 480 TRI 457 2N6100 187 PT 485 2N6371 77 PT 1077
2N5569 480 TRI 457 2N6101 187 PT 485 2N6372 175 PT 675
2N5570 480 TRI 457 2N6102 187 PT 485 2N6373 175 PT 675
2N5571 480 TRI 458 2N6103 187 PT 485 2 N 6374 175 PT 675
2N5572 480 TRI 458 2N6106 190 PT 676 2N6383 217 PT 609
2N5573 480 TRI 458 2N6107 190 PT 676 2N6384 217 PT 609
2N5574 480 TRI 458 2N6108 190 PT 676 2N6385 217 PT 609
2N5575 151 PT 359 2N6109 190 PT 676 2N6386 221 PT 610
2N5578 151 PT 359 2N6110 190 PT 676 2N6387 221 PT 610
2N5632 154 PT 1094 2N6111 190 PT 676 2N6388 221 PT 610
2N5633 154 PT 1094 2N6211* 197 PT 507 2N6394 546 SCR 891
2N5634 154 PT 1094 2N6212* 197 PT 507 2N6395 546 SCR 891
2N5671* 156 PT 383 2N6213* 197 PT 507 2N6396 546 SCR 891
2N5672* 156 PT 383 2N6214 197 PT 507 2N6397 546 SCR 891
2N5754 461 TRI 414 2N6246 200 PT 677 2N6398 546 SCR 891
2N5755 461 TRI 414 2N6247 200 PT 677 2N6400 546 SCR 892
2N5756 461 TRI 414 2N6248 200 PT 677 2N6401 546 SCR 892
2N5757 461 TRI 414 2N6249 204 PT 523 2N6402 546 SCR 892
2N5781 158 PT 413 2N6250 204 PT 523 2N6403 546 SCR 892
Index to Devices
2N6404 546 SCR 892 2N6676 267 PT 1087 40631 276 PT 965
2N6420 224 PT 1100 2N6677 267 PT 1087 40634 Same as RCA1A05
2N6421 224 PT 1100 2N6678 267 PT 1087 40635 Same as RCA1A06
2N6422 224 PT 1100 40250, V1 69 PT 112 40636 Same as RCA1B01
2N6465 175 PT 888 40251 77 PT 112 40814 Same as RCA1A07
2N6466 175 PT 888 40280 443 RF 68 40815 Same as RCA1A08
2N6467 175 PT 888 40290 444 RF 70 40829 175 PT 675
2N6468 175 PT 888 40291 444 RF 70 40830 175 PT 675
2N6469 200 PT 677 40292 444 RF 70 40831 175 PT 675
2N6470 200 PT 677 40310 270 PT 962 40850 278 PT 964
2N6471 200 PT 677 40311 270 PT 962 40851 278 PT 964
2N6472 200 PT 677 40312 270 PT 962 40852 278 PT 964
2N6473 190 PT 676 40313 270 PT 962 40854 278 PT 964
2N6474 190 PT 676 40314 270 PT 962 40871 281 PT 699
2N6475 190 PT 676 40316 270 PT 962 40872 281 PT 699
2N6476 190 PT 676 40317 270 PT 962 40894 447 RF 548
2N6477 227 PT 680 40318 270 PT 962 40895 447 RF 548
2N6478 227 PT 680 40319 270 PT 962 40896 447 RF 548
2N6479 230 PT 702 40321 270 PT 962 40897 447 RF 548
2N6480 230 PT 702 40322 270 PT 962 40910 69 PT 527
2N6486 233 PT 678 40323 270 PT 962 40911 69 PT 527
2N6487 233 PT 678 40324 270 PT 962 40912 87 PT 529
2N6488 233 PT 678 40325 270 PT 962 40913 87 PT 529
2N6489 233 PT 678 40327 270 PT 962 40936 448 RF 551
2N6490 233 PT 678 40340 445 RF 74 40964 449 RF 581
2N6491 233 PT 678 40341 445 RF 74 40965 449 RF 581
2N6496 125 PT 698 40346, V1,V2 84 PT 211 40979 Same as RCA1C10
2N6500 111 PT 766 40347,V1,V2 60 PT 88 40980 Same as RCA1C11
2N6510 235 PT 848 40348, V1.V2 60 PT 88 41024 450 RF 658
2N6511 235 PT 848 40349, V1.V2 60 PT 88 41500 190 PT 772
2N6512 235 PT 848 40360 Same as RCA1A01 41501 190 PT 770
2N6513 235 PT 848 40362 270 PT 962 41502 54 PT 773
2N6514 235 PT 848 40363 270 PT 962 41503 115 PT 774
2N6530 238 PT 873 40366 54 PT 215 41504 276 PT 965
2N6531 238 PT 873 40367 60 PT 215 BD142 283 PT 701
2N6532 238 PT 873 40368 65 PT 215 BD181 285 PT 700
2N6533 238 PT 873 40369 67 PT 215 BD182 285 PT 700
2N6534 242 PT 874 40372 69 PT 527 BD183 285 PT 700
2N6535 242 PT 874 40373 87 PT 529 BD239,A,B,C 288 PT 669
2N6536 242 PT 874 40374 96 PT 138 BD240,A,B,C 288 PT 670
2N6537 242 PT 874 40375 111 PT 766 BD241,A,B,C 290 PT 671
2N6542 246 PT 1096 40385 84 PT 215 BD242,A,B,C 290 PT 672
2N6544 246 PT 1096 40389 54 PT 960 BD243,A,B,C 292 PT 673
2N6546 246 PT 1096 40390 84 PT 64 BD244,A,B,C 292 PT 674
2N6569 73 PT 994 40391 115 PT 216 BD277 294 PT 667
2N6594 73 PT 994 40392 54 PT 960 BD278,A 295 PT 969
2N6609 250 PT 1061 40394 115 PT 216 BD450 297 PT 1107
2N6648 253 PT 1013 40406 274 PT 219 BD451 297 PT 1107
2N6649 253 PT 1013 40407 274 PT 219 BD500,A,B 299 PT 1108
2N6650 253 PT 1013 40408 274 PT 219 BD501,A,B 299 PT 1108
2N6666 255 PT 1069 40409 274 PT 219 BD550,A,B 301 PT 1109
2N6667 255 PT 1069 40410 274 PT 219 BDX18 73 PT 994
2N6668 255 PT 1069 40411 274 PT 219 BDX33,A,B,C 307 PT 693
2N6669 258 PT 1071 40412,V1,V2 84 PT 211 BDX34,A,B,C 307 PT 694
2N6670 441 PT 1091 40537 270 PT 320 BDX83,A,B,C 310 PT 955
2N6671 260 PT 1090 40538 270 PT 320 BDY29 313 PT 819
2N6672 260 PT 1090 40539 270 PT 303 BDY37 315 PT 863
2N6673 260 PT 1090 40594 Same as RCA1A03 BDY71 317 PT 859
2N6674 264 PT 1085 40595 Same as RCA1A04 BFT19,A,B 319 PT 683
2N6675 264 PT 1085 40608 446 RF 356 BFT28,A,B 321 PT 815
Index to Devices
BU106 323 PT 716 RCA1A10 346 PT 651 RCP117,B 383 PT 822
BU126 325 PT 968 RCA1A11 346 PT 651 RCP131A,B,C,D 386 PT 904
BU133 325 PT 968 RCA1A15 346 PT 651 RCP133A,B,C,D 386 PT 904
BU207 326 PT 1088 RCA1A16 346 PT 651 RCP135,B 386 PT 904
BU208.A 326 PT 1088 RCA1A17 346 PT 651 RCP137,B 386 PT 904
BUX16,A,B,C 329 PT 800 RCA1A18 346 PT 651 RCP700A,B,C,D 388 PT 821
BUX17,A,B,C 332 PT 818 RCA1A19 346 PT 651 RCP701A,B,C,D 388 PT 820
BUX18,A,B,C 335 PT 862 RCA1B01 350 PT 647 RCP702A,B,C,D 388 PT 821
BUX66,A,B,C 337 PT 870 RCA1B04 351 PT 908 RCP703A,B,C,D 388 PT 820
BUX67,A,B,C 337 PT 871 RCA1B05 351 PT 908 RCP704,B 388 PT 821
C106A,B,C,D,E, 514 SCR 1005 RCA1B06 357 PT 648 RCP705,B 388 PT 820
F,M,Q,Y RCA1B09 351 PT 908 RCP706,B 388 PT 821
C107A,B,C,D,E, 514 SCR 1005 RCA1C03 358 PT 652 RCP707,B 388 PT 820
F,M,Q,Y RCA1C04 358 PT 652 RCS29,A,B,C 394 PT 880
C108A,B,C,D,E, 514 SCR 1005 RCA1C05 359 PT 644 RCS30,A,B,C 396 PT 881
F,M,Q,Y RCA1C06 359 PT 644 RCS31,A,B,C 398 PT 882
CH2102 413 PT 632 RCA1C07 361 PT 646 RCS32,A,B,C 400 PT 883
CH2270 413 PT 632 RCA1C08 361 PT 646 RCS258 101 PT 974
CH3440 413 PT 632 RCA1C12 358 PT 652 RCS683,A,B 392 PT 974
CH5321 413 PT 632 RCA1C16 367 PT 1010 S106A,B,C,D,E, 517 SCR 966
CH5322 413 PT 632 RCA1 E02 369 PT 653 F,M,Q,Y
CH5323 413 PT 632 RCA1 E03 369 PT 653 S107A,B,C,D,E, 517 SCR 966
CH6479 413 PT 632 RCA29,A,B,C 394 PT 583 F,M,Q,Y
D2101S 535 R 522 RCA30,A,B,C 396 PT 584 S122A,B,C,D,E, 529 SCR 889
D2103SF 535 R 522 RCA31,A,B,C 398 PT 585 F,M,S
D2406A,B.C,D, 577 R 663 RCA32,A,B,C 400 PT 586 S2060A,B,C,D 520 SCR 654
F,M RCA41,A,B,C 402 PT 587 E,F,M,Q,Y
D2412A,B,C,D, 577 R 664 RCA42,A,B,C 404 PT 588 S2061A,B,C,D 520 SCR 654
F,M RCA120 408 PT 840 E,F,M,Q,Y
D2520A,B,C,D, 578 R 665 RCA121 408 PT 840 S2062A,B,C,D, 520 SCR 654
F,M RCA122 408 PT 840 E,F,M,Q,Y
D2540A,B,D,F,M 578 R 580 RCA125 411 PT 841 S2600B,D,M 526 SCR 496
D2600M 535 R 839 RCA126 411 PT 841 S2610B,D,M 526 SCR 496
D2601E,M 535 R 723 RCA410 370 PT 509 S2620B,D,M 526 SCR 496
D3202U,Y 574 D 577 RCA411 372 PT 510 S2710B,D,M 523 SCR 266
G4000A,B,D 570 SCR 1052 RCA413 374 PT 511 S2800A,B,C,D, 529 SCR 890
G4001A,B,D 570 SCR 1052 RCA423 376 PT 512 E,F,M,S
HC2000H 452 PH 566 RCA431 378 PT 513 S3700B,D,M 532 SCR 306
HC2500 452 PH 681 RCA1000 217 PT 594 S3701M 533 SCR 476
MAC15,A 496 TRI 1086 RCA1001 217 PT 594 S3702S 535 SCR 522
MJ2955 73 PT 994 RCA3054 135 PT 618 S3703SF 535 SCR 522
MJ15001 341 PT 1093 RCA3055 187 PT 618 S3704A,B,D,M,S 532 SCR 690
MJ 15002 341 PT 1093 RCA3441 227 PT 666 S3705M 535 SCR 839
MJ 15003 343 PT 1060 RCA3733 743 PT 1060 S3706E 535 SCR 839
MJ 15004 250 PT 1060 RCA6263 227 PT 666 S3714A,B,D,M,S 532 SCR 690
RCA1A01 346 PT 651 RCA8203A,B 255 PT 835 S3900MF,S,SF 538 ITR 938
RCA1A02 346 PT 651 RCA8350A,B 253 PT 861 S3901M,MF, S 538 ITR 938
RCA1A03 346 PT 651 RCA8638C,D,E 343 PT 1060 S3902DF 538 ITR 938
RCA1A04 346 PT 651 RCA8766A,B,C, 380 PT 973 S3903MF 538 ITR 938
RCA1A05 346 PT 651 D S5800B,C,D,E,M 544 SCR 1051
RCA1A06 346 PT 651 RCA9116C,D,E 250 PT 1061 S5801B,C,D,E,M 544 SCR 1051
RCA1A07 346 PT 651 RCP111A,B,C,D 383 PT 822 S5802B,C,D,E,M 544 SCR 1051
RCA1A08 346 PT 651 RCP113A,B,C,D 383 PT 822 S6000C,E,S 546 SCR 891
RCA1A09 346 PT 651 RCP115,B 383 PT 822 S6100C,E,S 546 SCR 892
Index to Devices
S6200A,B,D,M 549 SCR 418 T2327A,B,C,D, 466 TRI 1042 T6001B,C,D,E, 490 TRI 1004
S6210A,B,D,M 549 SCR 418 E,F F,M
S6220A,B,D,M 549 SCR 418 T2500B.D 469 TRI 615 T6006B,C,D,E, 490 TRI 1004
S6230A,B,D,M 552 SCR 877 T2506B.D 512 TRI 406 M
S6240A,B,D,M 552 SCR 877 T2700B.D 471 TRI 351 T6401B,D,E,F,M 503 TRI 459
S6250A,B,D,M 552 SCR 877 T2706B,D 512 TRI 406 T6404B,D,E 507 TRI 487
S6400N 553 SCR 578 T2710B,D 471 TRI 351 T6405B,D,E 507 TRI 487
S6410N 553 SCR 578 T2716B.D 512 TRI 406 T6406B,D,E,M 512 TRI 406
S6420A,B,D,M,N 553 SCR 578 T2800A,B.C,D, 473 TRI 838 T6407B,D,E,M 512 TRI 406
S6430A,B,D,M,N 552 SCR 877 E.F,M T6411B,D,E,F,M 503 TRI 459
S6440A,B.D,M,N 552 SCR 877 T2801A,B,C,D, 473 TRI 837 T6414B.D 507 TRI 487
S6450A,B,D,M,N SCR 877 E,F,M T6415B.D 507 TRI 487
552
S6493M 559 SCR 247 T2802B,C,D,E,M 473 TRI 838 T6416B,D,M 512 TRI 406
S7310B,C,D,E,M 561 SCR 975 T2806B,D 512 TRI 406 T6417B,D,M 512 TRI 406
S7410M 564 SCR 408 T2850A,B,D,E,F 473 TRI 540 T6420B,D,E,F,M 503 TRI 593
S7412M 564 SCR 724 T2851B,C,D,E 477 TRI 1083 T6421B,D,E,F,M 503 TRI 459
S8610A,B,D,M SCR 1020 T2856B.D 512 TRI 406 T6426B,D,M 512 TRI 406
566
S8611A,B,D,M 566 SCR 1.020 T4100E,F,M 480 TRI 458 T6427B,D,M 512 TRI 406
S8612A,B,D,M 566 SCR 1020 T4101E,F,M 480 TRI 457 T6430B,D,E,F,M 486 TRI 878
S8613A,B,D,M 566 SCR 1020 T4103B,D,E,M 484 TRI 443 T6431B,D,E,F,M 486 TRI 878
S8620A,B,D,M 566 SCR 1020 T4104B,D,E,M 484 TRI 443 T6440B,D,E,F,M 486 TRI 878
S8621A,B,D,M 566 SCR 1020 T4105B,D,M 484 TRI 443 T6441B,D,E,F,M 486 TRI 878
SC149B,D.E,M 498 TRI 1082 T4110E,F,M 480 TRI 458 T8411B,D,E,F,M 509 TRI 725
SC151B,D,E,M 498 TRI 1082 T4111E,F,M 480 TRI 457 T8421B,D,E,F,M 509 TRI 725
T2300A,B,D,F 458 TRI 911 T4113B,D,E,M 484 TRI 443 TIC236B.D 501 TRI 1078
T2301A,B,D,F 458 TRI 911 T4114B,D,E,M 484 TRI 443 TIC246B,D 501 TRI 1078
T2302A,B,D,F 458 TRI 911 T4115B D,E,M
/
484 TRI 443 TIP29,A,B,C 394 PT 990
T2303F 461 TRI 912 T4116B,D,M 512 TRI 406 TIP30,A,B,C 396 PT 988
T2304B,D 464 TRI 441 T4117B,D,M 512 TRI 406 TIP31,A,B,C 398 PT 991
T2305B,D 464 TRI 441 T4120B,D,E,F,M 480 TRI 458 TIP32,A,B,C 400 PT 987
T2306A,B,D 512 TRI 406 T4121B,D,E,F,M 480 TRI 457 TIP41,A,B,C 402 PT 992
T2310A,B,D,F 458 TRI 911 T4126B,D,M 512 TRI 406 TIP42,A,B,C 404 PT 996
T2311A,B,D,F 458 TRI 911 T4127B,D,M 512 TRI 406 TIP47 406 PT 978
T2312A,B,D,F 458 TRI 911 T4130B,D,E,F,M 486 TRI 878 TIP48 406 PT 978
T2313A,B,D,F,M 461 TRI 912 T4131B,D,E,F,M 486 TRI 878 TIP49 406 PT 978
T2316A,B,D 512 TRI 406 T4140B,D,E,F,M 486 TRI 878 TIP50 406 PT 978
T2320A,B,C,D, 466 TRI 1042 T4141B,D,E,F,M 486 TRI 878 TIP120 408 PT . 998
E,F T4150B,D,E,F,M 486 TRI 878 TIP121 408 PT 998
T2322A,B,C,D, 466 TRI 1042 T4151B,D,E,F,M 486 TRI 878 TIP122 408 PT 998
E,F T4700B,D,E,F 488 TRI 300 TIP125 411 PT 997
T2323A,B,C,D 466 TRI 1042 T6000B,C D,E, (
490 TRI 1004 TIP126 411 PT 997
E,F F,M TIP127 411 PT 997
BR = Bridge rectifier PH = Power hybrid circuit RF = RF power transistor

D = Diac PT = Power transistor SCR = Silicon controlled rectifier
GTO = Gate-turn-off SCR R = Rectifier TRI = Triac
ITR = Integrated thyristor/rectif ier RA = Rectifier assembly * JAN-type versions also available.
Power Transistor Selection Charts
N-P-N SILICON POWER TRANSISTORS
Current Gain Sw. Times*
Type No. VcEOûs) hFE ic VCE pt >C *T *0N tf Package p-n-p
(Max.) (Max.) Complement
V A V W A MHz jus
l
C (Max.) = 0.15 to 1 A, fj = 3 to 25 MHz
40346 175 25 min. 0.010 10 10 1 15 _ _ TO-39 _
41505* 200 20 min. 0.050 10 20 1 21 _ _ Plastic TO-5 _
2 N 3440 250 40-160 0.020 10 10 1 15 — _ TO-39 2N5415
40412 250* 40 min. 0.030 20 10 1 15 _ _ TO-39 —
TIP47 250 10 min. 1 10 40 1 5 0.2 0.5 TO-220AB —
40321 300* 25-200 0.020 10 5 1 15 — _ TO-39 —
TIP48 300 10 min. 1 10 40 1 5 0.2 0.5 TO-220AB _
2 N 3439 350 40-160 0.020 10 10 1 15 — _ TO-39 2N5416
TIP49 350 10 min. 1 10 40 1 5 0.2 0.5 TO-220AB _
TIP50 400 10 min. 1 10 40 1 5 0.2 0.5 TO-220AB -
\q (Max.) = 0.15 to 1 A,f r = 50to 100 MHz
41502 30 20 min. 0.150 10 3 1 60 — _ TO-39 41503
2 N 3053 40 50-250 0.150 10 5 1 60 _ _ TO-39 2N4037
2 N 3053 60 50-250 0.150 10 5 0.7 60 — — TO-39 _
2N2102 65 25 min. 0.500 10 5 1 60 30 ns® _ TO-39 2N4036
RCP115 100 50 min. 0.025 10 6.25 0.150 80 _ _ TO-202AB _
RCP117 100 20 min. 0.025 10 6.25 0.150 80 - - TO-202AB -
RCP111A 200 50-300 0.025 10 6.25 0.150 80 _ _ TO-202AB _
RCP113A 200 30-150 0.025 10 6.25 0.150 80 — _ TO-202AB _
RCP111B 250 50-300 0.025 10 6.25 0.150 80 — _ TO-202AB _
RCP113B 250 30-150 0.025 10 6.25 0.150 80 — _ TO-202AB _
RCP115B 250 50 min. 0.025 10 6.25 0.150 80 - - TO-202AB -
RCP117B 250 20 min. 0.025 10 6.25 0.150 80 _ _ TO-202AB _
RCP111C 300 50-300 0.025 10 6.25 0.150 80 _ _ TO-202AB _
RCP113C 300 30-150 0.025 10 6.25 0.150 80 — _ TO-202AB —
RCP111D 350 50-300 0.025 10 6.25 0.150 80 — — TO-202AB —
RCP113D 350 30-150 0.025 10 6.25 0.150 80 - - TO-202AB -
IC (Max.) = 1.5 to 2 A, fj = 0.2to1.5MHjI
2N1479 40 20-60 0.200 4 5 1.5 1.4 1.2 1 TO-39 —
2N1481 40 35-100 0.200 4 5 1.5 1.4 1.2 1 TO-39 _
40347 40 20-150 0.450 4 8.75 1.5 1.5 _ _ TO-39 _
2N1480 55 20-60 0.200 4 5 1.5 1.4 1.2 1 TO-39 _
2N1482 55 35-100 0.200 4 5 1.5 1.4 1.2 1 TO-39 _
40348 65 10 min. 1 4 8.75 1.5 1.5 — — TO-39 _
40349 140 10 min. 0.450 4 8.75 1.5 0.9 - - TO-39 -
IC (Max.) = 1.5 to 2 A, fy = 3 to 25 MHz
2 N 5050 125 5 2 5 40 2 25 0.3@ 1.2 TO-213MA _
BUX67 150 10-150 1 5 35 2 10 3 3 TO-66 BUX66
2N5051 150 5 2 5 40 2 10 0.3@ 1.2 TO-213MA _
2N5052 200 5 2 5 40 2 10 0.3@ 1.2 TO-213MA _
2 N 3584 250 8-80 1 2 35 2 10 3 3 TO-66 2N6211
BUX67A 250 10-150 1 5 35 2 10 3 3 TO-66 BUX66A
2N3585 300 8-80 1 2 35 2 10 3 3 TO-66 2N6212
2 N 4240 300 10-100 0.750 2 35 2 15 0.5 3 TO-66 _
BUX67B 300 10-150 1 5 35 2 10 3 3 TO-66 BUX66B
BUX67C 350 10-150 1 5 35 2 10 3 3 TO-66 BUX66C
lc(Max.) = l.5to2A,fy = 50 to 100 MHz =
RCP705 30 50 min. 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP704

RCP707 30 20 min. 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP706
RCP701A 40 50-250 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP700A
RCP703A 40 30-150 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP702A
2N5321 50 40-250 0.500 4 10 2 50 80 ns 800 ns* TO-39 2N5323
2N6179 50 40-250 0.500 4 25 2 50 80 ns 800 ns* Plastic TO-5 2N6181
2N6670 50 30 0.4 2 10 1.5 50 — _ TO-202AB _
RCP701B 60 50-250 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP700B
RCP703B 60 30-150 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP702B
RCP705B 60 50 min. 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP704B
RCP707B 60 20 min. 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP706B
2N55320 75 30-130 0.500 4 10 2 50 80 ns 800 ns* TO-39 2N5322
2N6178 75 30-130 0.500 4 25 2 50 80 ns 800 ns* Plastic TO-5 2N6180
RCP701C 80 50-250 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP700C
RCP703C 80 30-150 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP702C
RCA1A03 95* 70-300 0.300 4 10 2 50 _ _ TO-39 RCA1A04
RCP701D 100 50-250 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP700D
RCP703D 100 3a 150 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP702D
^Measured at same current level as hpg unless otherwise indicated *Vcer(sus) * trjFF
Check availability in Europe, the Middle East, and Africa. ® t d + tr + tf
@t r
N-P-N SILICON POWER TRANSISTORS (cont'd)
Current Gain Sw. Ti mes A
Type No. VcEO( sus ) hFE «C VCE PT ic fT tON I tf Package p-n-p

V A V W A MHz JUS
lc(Max.) = 2.5to5A,fT 0.2 to 2 MHz

=
40 20-60 0.750 4 25 3 0.8 1.2 1.1 TO-8

2N1483 TO-8
35-100 0.750 4 25 3 0.8 1.2 1.1
2N1485 40
40 20-100 2 10 3.5 1 50 15*0 TO-39 2N5783
2N5786 1.6
15* 2N6108
2N5295 40 30-120 1 4 36 4 0.8 5 TO-220AB
40 30-120 4 36 4 0.8 5 15* TO-220AB 2N6109
2N5296 1
2N6260 40 3 min 4 2 29 3 0.8 TO-66

40 25 min. 1.5 4 29 4 1 TO-66 2N5956
40250 5O 15*0 2N5782
2N5785 50 20-100 1.2 2 10 3.5 1 TO-39
55 20-80 0.750 4 25 3 0.8 1.2 1.1 TO-8
2N1484
55 35-100 0.750 4 25 3 0.8 1.2 1.1 TO-8
2N1486
5 min. 3 4 25 4 0.8 TO-66 2N5955
2N3054 55
RCA3054 55 5 min. 3 4 36 4 0.8 TO-220AB
BOY71 55 5 min. 3 4 29 4 0.8 TO-66
60 20-80 4 36 4 0.8 5 15* TO-220AA 2N6106
2N5297 1.5
15* 2N6107
2N5298 60 20-80 1.5 4 36 4 0.8 5 TO-220AB
65 20-100 2 10 3.5 1 5 15* TO-39 2N5781
2N5784 1
2N6106
2N5293 70 30-120 0.5 4 36 4 0.8 5 15* TO-220AA
70 30-120 0.5 4 36 4 0.8 5 15* TO-220AB 2N6107
2N5294
2N6261 80 5 min. 4 2 50 4 0.8 TO-66
2 200 20 2 TO-204MA RCA9116E
RCA8638E 100 10 7.5
10 2 200 20 2 TO-204MA RCA9116D
RCA8638D 120 10
TO-220AB
2N6477 120 5 min. 2.5 4 50 2.5 0.2
3 min. 3 2 20 3 0.2 - - TO-66 2N6468
2N6263 120
RCA6263 120 20-150 0.5 4 36 3 0.2 TO-220AB
120 10 min. 5 4 100 5 0.2 TO-3 2N6248
2N4347
2N6478 140 5 min. 2.5 4 50 2.5 0.2 TO-220AB
140 5 min. 2.7 4 25 3 0.2 TO-66 2N6468
2N3441
RCA3441 140 20-150 0.5 4 36 3 0.2 TO-220AB
140 16 4 150 20 2 - - TO-204MA 2N6609
RCA3773 5
TO-204MA RCA9116C
RCA8638C 140 10 10 2 200 20 2
140 10 10 2 250 20 2 TO-204MA MJ15004

MJ 15003 -
2 N 6264 150 5 min. 3 2 50 3 0.2 TO-66
BU207 600 2.25 4.5 5 12.5 5 1 0.6 TO-204MA
BU208 700 2.25 4.5 5 12.5 5 1 0.6 TO-204MA
BU208A 700 2.5 4.5 5 12.5 5 1 0.6 TO-204MA
IC= 2.5 to S A, f j = 3 to 25 MHz

40 15-150 4 30 3 3 0.4 1.2* TO-220AB RCA30
RCA29* 1
1.2* TO-220AB RCA32
RCA31* 40 25 min. 1 4 40 5 3 0.4
40 15-150 4 30 3 3 0.4 1.2* TO-66 RCS30
RCS29* 1
RCS32
RCS31* 40 25 min. 1 4 40 5 3 0.4 1.2* TO-66
40 15-150 4 30 3 3 0.4 1.2* TO-220AB TIP30
TIP29 1
25 min. 4 40 5 3 0.4 1.2* TO-220AB TIP32

TIP31 40 1
45 15 min. 4 30 4 3 TO-220AB BD240

BD239 1
BD242
BD241 45 25 min. 1 4 40 5 3 TO-220AB
BD239A 60 15 min. 1 4 30 4 3 TO-220AB BD240A
BD241A 60 25 min. 1 4 40 5 3 TO-220AB BD242A
RCA29A* 60 15-150 1 4 30 3 3 0.4 1.2* TO-220AB RCA30A
RCA31A* 60 25 min. 1 4 40 5 3 0.4 1.2* TO-220AB RCA32A
60 15-150 4 30 3 3 0.4 1.2* TO-220AB TIP30A
TIP29A 1
TIP32A
TIP31A 60 25 min. 1 4 40 5 3 0.4 1.2* TO-220AB
80 15 min. 4 30 4 3 TO-220AB BD240B
BD239B 1
BD241B 80 25 min. 1 4 40 5 3 TO-220AB BD242B

RCA29B* 80 15-150 1 4 30 3 3 0.4 1.2* TO-220AB RCA30B
RCA31B* 80 25 min. 1 4 40 5 3 0.4 1.2* TO-220AB RCA32B
TIP29B 80 15-150 1 4 30 3 3 0.4 1.2* TO-220AB TIP30B
TIP31B 80 25 min. 1 4 40 5 3 0.4 1.2* TO-220AB TIP32B
2N6465 100 5 min. 4 4 40 4 5 TO-66 2N6467
2N6473 100 2 min. 4 2.5 40 4 4 TO-220AB 2N6475
2N5869 60 4 5 4 87.5 5 4 .7@ 0.8 TO-204MA
2N5870 80 4 5 4 87.5 5 4 .7@ 0.8 TO-204MA
BD239C 100 15 min. 1 4 30 4 3 TO-220AB BD240C
BD241C 100 25 min. 4 40 5 3 TO-220AB BD242C
RCA29C* 100 15-150 4 30 3 3 0.4 1.2* TO-220AB RCA30C
RCA31C* 100 25 min. 4 40 5 3 0.4 1.2* TO-220AB RCA32C
TIP29C 100 15-150 4 30 3 3 0.4 1.2* TO-220AB TIP30C
TIP31C 100 25 min 4 40 5 3 0.4 1.2* I
TO-220AB TIP32C
^Measured at same current level as hpg unless otherwise indicated 'Vcer(sus) *tOFF
Check availability in Europe, the Middle East, and Africa. OAtl C =1A
Current Gain Sw. Timet*

Type No. VcEO(««l hFE ic VCE pt •c fT tON tf Package p-n-p
V A V W A MHz MS
IC= 2.5 to 5 A, fy - 3 to 25 MHz (cont'd)
2N6466 120 5 min. 4 4 40 4 5 TO-66 2N6468
2 N 6474 120 2 min. 4 2.5 40 4 4 TO-220AB 2N6476
BUX16 200 5 min. 4.5 10 100 5 5 TO-3
2N5239 225 5 min. 4.5 10 100 5 5 TO-3
2N5838 250 8-40 3 2 100 3 5 0.86 0.4 TO-3
BU133 250 15-80 1 5 80 3 3.5 0.5 TO-3
BUX16A 250 5 min. 4.5 10 100 5 5 TO-3 -
2N5839 275 10-50 2 3 100 3 5 0.67 0.35 TO-3
2N5240 300 5 min. 4.5 10 100 5 5 TO-3
2N6542 300 7 3 2 100 5 6 0.75 0.8 TO-204MA
BU126 300 15-60 1 5 80 3 3.5 0.5 TO-3
BUX16B 300 5 min. 4.5 10 100 5 5 TO-3
2N5840 350 10-50 2 3 100 3 5 0.67 0.35 TO-3 -
BUX16C 350 5 min. 4.5 10 100 5 5 TO-3
IC" 2.5 to 5 A, fy- 50 to 100 Mrte
2N3878 50 20 min. 4 5 35 4 40 TO-66
2N5202 50 10-100 4 1.2 35 4 60 0.44 0.4 TO-66
2N6500 90 15-60 3 2 35 4 60 0.44 0.5 TO-66 ;
IC"6to10>\, fj - 0.2 to 1 MHz
2N1487 40 15-45 1.5 4 75 6 0.8 TO-3
2N1489 40 25-75 1.5 4 75 6 0.8 TO-3
2N5490 40 20-100 2 4 50 7 0.8 5 15* TO-220AB 2N6109
2N5491 40 20-100 2 4 50 7 0.8 5 15* TO-220AA 2N6108
2N5494 40 20-100 3 4 50 7 0.8 5 15* TO-220AB 2N6109
2N5495 40 20-100 3 4 50 7 0.8 5 15* TO-220AA 2N6108
BD278 45 15-75 4 4 75 10 0.8 TO-220AB
2N1488 55 15-45 1.5 4 75 6 0.8 TO-3
2N1490 55 25-75 1.5 4 75 6 0.8 TO-3
2N5492 55 20-100 2.5 4 50 7 0.8 5 15* TO-220AB 2N6107
2N5493 55 20-100 2.5 4 50 7 0.8 5 15* TO-220AA 2N6106
2N3715 60 5 10 4 150 10 25 TO-204MA
2N3716 80 5 10 4 150 10 25 TO-204MA
2N6098 60 5 min. 10 4 75 10 0.8 TO-220AA
2N6099 60 5 min. 10 4 75 10 0.8 TO-220AB
BD278A 60 15-75 4 4 75 10 0.8 TO-220AB
2N5496 70 20-100 3.5 4 50 7 0.8 5 15* TO-220AB 2N6107
2N5497 70 20-100 3.5 4 50 7 0.8 5 15* TO-220AA 2N6106
2N6100 70 20-80 5 4 75 10 0.8 TO-220AA
2N6101 70 20-80 5 4 75 10 0.8 TO-220AB
2N5632 100 5 10 2 150 10 1 TO-204MA
2N4348 120 10 min. 10 4 120 10 0.2 - TO-3 2IM6248
2N5633 120 5 10 2 150 10 1 TO-204MA
2N5634 140 5 10 2 150 10 1 - TO-204MA
2N3442 140 7.5 min. 10 4 117 10 0.8 TO-3
2N6262 150 5 min. 10 2 150 10 0.8 TO-3
2N6078 250 12-70 1.2 1 45 7 1 0.32 0.3 TO-66 -
2N6077 275 12-70 1.2 1 45 7 1 0.32 0.3 TO-66
2N6079 350 12-50 1.2 1 45 7 1 0.32 0.3 TO-66
ic = 6toio;K, fj = 2.5 to 25 MHz
41500 25 25 min. 1 4 40 7 4 TO-220AB 41501
2N6288 30 2.3 min. 7 4 40 7 4 TO-220AB 2N6111
2N6289 30 2.3 min. 7 4 40 7 4 TO-220AA 2N6110
2N6374 40 5 min. 6 4 40 6 4 TO-66 2N5956
RCA41* 40 15-150 3 4 65 7 3 0.6* t.4*» TO-220AB RCA42
TIP41 40 15-150 3 4 65 7 3 0.6* 1.4*» TO-220AB TIP42
BD243 45 15 min. 3 4 65 7 2 TO-220AB BD244
2N6290 50 2.3 min. 7 4 40 7 4 TO-220AB 2N6109
2N5871 60 4 10 4 150 10 20 TO204MA
2N5878 80 4 10 4 150 10 20 TO-204MA
2N6671 300 10 5 3 150 8 15 0.8® 0.8 TO-204MA
2N6672 350 10 5 3 150 8 15 0.8® 0.8 TO-204MA
2N6673 400 10 5 3 150 8 15 0.8® 0.8 TO-204MA
2N6669 30 20 5 2 40 10 10 0.35 0.5 TO-220AB
BD243 45 15 min. 3 4 65 7 2 TO-220AB BD244
2N6290 50 2.3 min. 7 4 40 7 4 - TO-220AB 2N6109
2N6291 50 2.3 min. 7 4 40 7 4 _ TO-222AA 2N6108
^Measured at same current level as hpE unless otherwise indicated •At c - 6A
*tOFF l
Check availability in Europe, the Middle East, and Africa. ®t r

10
1

Current Gain Sw. Times A
Type No. VcEO(sus) hFE ic VCE pt ic fT tON tf Package p-n-p

V A V W A MHz jus
IC = 6 to 10 A, fj = 2.5 to 25 MHz (cont'd)

2N6373 60 5 min. 6 4 40 6 4 TO-66 I 2N5955
BD243A 60 15 min. 3 4 65 7 3 TO-220AB BD244A
RCA41A A 60 15-150 3 4 65 7 3 0.6 # 1.4** TO-220AB RCA42A
TIP41A 60 15-150 3 4 65 7 3 0.6* 1.4*» TO-220AB
2N6292 70 2.3 min. 7 4 40 7 4 TO-220AB 2N6107
2N6293 70 2.3 min. 7 4 40 7 4 TO-220AA 2N6106
2N6372 80 5 min. 6 4 40 6 4 TO-66 2N5954
BD243B 80 15 min. 3 4 65 7 3 TO-220AB BD244B
RCA41B 80 15-150 3 4 65 7 3 0.6* 1.4*» TO-220AB RCA42B
TIP41B 80 15-150 3 4 65 7 3 0.6 - 1.4** TO-220AB
BD243C 100 15 min. 3 4 65 7 3 TO-220AB BD244C
RCA41C 100 15-150 3 4 65 7 3 0.6 # 1.4*» TO-220AB RCA42C
TIP41C 100 15-150 3 4 65 7 3 0.6* 1.4*« TO-220AB
BU106 140 8 min. 4 5 75 7 3 1.5 TO-3
150 10 2.5 2 TO-3 -
BUX17 150 7 min. 10 3 1
2N6249 200 10-50 10 3 175 10 8 0.8 @ 0.5 TO-3

2N6510 200 10-50 3 3 120 7 3 0.8 0.5 TO-3
BUX18 200 7 min. 6 3 120 8 3 0.6* TO-3
RCA410 200 30 min. 1 5 125 7 4 0.35@ 0.15 TO-3
2N6306 250 15-75 3 5 125 8 5 6@ 0.4 TO-3
250 10-50 4 3 120 7 3 0.8 0.5 TO-3 -
2N6511
BUX17A 250 7 min. 10 3 150 10 2.5 2 1 TO-3
RCS579* 250 12 min. 3 5 125 8 5 0.6 @ 0.4 TO-3
2N6250 275 8-50 10 3 175 10 8 0.8 @ 0.5 TO-3
BUX18A 275 7 min. 5 3 120 8 3 0.6* TO-3
2N6307 300 15-75 3 5 125 8 5 0.6 @ 0.4 TO-3
2N6512 300 10-50 4 3 120 7 3 1.7 1.5 TO-3 -
2N6514 300 10-50 5 3 120 7 3 0.8 0.5 TO-3
2N6544 300 7 5 2 125 8 6 1.05 1 TO-204MA
BUX17B 300 7 min. 8 3 150 10 2.5 2 1 TO-3
RCA41 300 30-90 1 5 125 7 2.5 0.35 @ 0.15 TO-3
RCA8767 300 8 min. 6 3 175 10 20 0.4® 0.3 TO-3 -
BUX18B 325 10 min. 4 3 120 8 3 0.6* TO-3
RCA413 325 15 min. 1 5 125 7 4 0.35 @ 0.15 TO-3
RCA423 325 30-90 1 5 125 7 4 0.35@ 0.15 TO-3
RCA431 325 15-35 2.5 5 125 7 4 0.35® 0.15 TO-3
2N6251 350 6-50 10 3 175 10 8 8@ 0.5 TO-3 -
2N6308 350 12-60 3 5 125 8 5 0.6 @ 0.4 TO-3
2N6513 350 10-50 4 3 120 7 3 0.8 0.5 TO-3
BUX17C 350 7 min. 8 3 150 10 2.5 2 1 TO-3
BUX18C 375 10 min. 4 3 120 8 3 0.6* TO-3
RCA8766 350 100 min. 6 3 150 10 10 TO-3 -
RCA8766A 350 100 min. 4 3 150 10 10 TO-3
RCA8767A 350 8 min. 6 3 175 10 20 0.4@ 0.3 TO-3
BUX18C 375 10 min. 4 3 120 8 3 0.6* TO-3
RCA8766B 400 100 min. 6 3 150 10 10 TO-3
RCA8766C 400 100 min. 4 3 150 10 10 TO-3 -
RCA8767B 400 8 min. 6 3 175 10 20 0.4@ 0.3 TO-3
RCA8766D 450 100 min. 6 3 150 10 10 - TO-3 —
RCA8766E 450 100 min. 4 3 150 10 10 TO-3
IC - 6 to 10 A, fj - 50 to 100 MHz
2N3879 75 12-100 4 2 35 7 60 0.44 0.4 TO-66
2N6354 120 2 min. 10 2 140 10 80 1@ 0.2 TO-3 -
IC = 12 to 20 A, fj = 0.2 to 2 MHz
2N6102 40 5 min. 16 4 75 16 0.8 TO-220AA
2N6103 40 5 min. 16 4 75 16 0.8 TO-220AB
2N6257 40 5 min. 20 4 150 20 0.2 TO-3
2N6371 40 4 min. 16 4 117 16 0.8 TO-3 2N6469
2N6569 40 5-100 12 4 100 12 1.5 1.9" 1.5" TO-3 2N6594
RCA41/SDH* 40 15 min. 3 4 75 16 0.8 3.23 @ 3.7** TO-220AB
2N6253 45 3 min. 15 4 115 15 0.8 TO-3
BD142 45 12.5-160 4 4 117 15 0.8 TO-3
B0181 45 20-70 3 4 117 15 0.8 TO-3
2N3055(Hom. 60 5 min. 10 4 115 15 0.8 TO-3 2N6246
2N3772 60 5 min. 20 4 150 20 0.2 TO-3 2N6246
BD182 60 20-70 4 4 117 15 0.8 - - TO-3
RCA3055 60 5 min. 10 4 75 15 0.8 TO-220AB
A Measured at same current level as hp£ unless oth erwise ndicated •Atl C = 6A *Atlc = 4A ®t r *t FF
Check availability in Europe, the Midd e East, an d Afric a. At I
C = 2A 11
l


Type No. VcEO< sus ) "FE »c VCE pt ic *T *0N tf Package p-n-p
V A V W A MHz jus
IC = 12 to 20 A, fj = 0.2 to 2 MHz (cont'd)

2N5881 60 4 15 4 160 15 4 _ _ TO-204MA 2N5879
RCS258* 60 5 min. 20 4 250 20 0.2 - - TO-3
40363 70* 20-70 4 4 115 15 0.7 _ TO-3
2N6254 80 5 min. 15 4 150 15 0.8 _ _ TO-3 _
RCS617 80 20 5 4 115 15 2.5 — _ TO-204MA RCS618
2N5882 80 4 15 4 160 15 4 _ _ TO-204MA 2N5880
BD183 80 20-70 3 4 117 15 0.8 - - TO-3
RCA1801* 95* 20-70 4 4 115 15 0.8 _ _ TO-3
2N3773 120 5 min. 16 4 150 16 0.2 _ _ TO-3 _
BDY37 140 15-60 8 4 150 16 0.2 _ _ TO-3 _
MJ15001 140 25 4 2 200 15 2 _ _ TO-204MA MJ15002
2N6259 150 10 min. 16 4 250 16 0.2 - - TO-3 -
IC = 12 to 20 A, fj = 2.5 to 25 MHz
2N6470 40 5 min. 15 4 125 15 5 _ _ TO-3 2N6469
2N6486 40 5 min. 15 4 75 15 5 _ _ TO-220AB 2N6489
2N3055 60 20-70 4 4 115 15 2.5 1.9" 1.5" TO-3 MJ2955
2N6471 60 5 min. 15 4 125 15 5 _ _ TO-3 2N6246
2N6487 60 5 min. 15 4 75 15 5 - - TO-220AB 2N6490
2N6472 80 5 min. 15 4 125 15 5 _ _ TO-3 2N6247
2N6488 80 5 min. 15 4 75 15 5 — _ TO-220AB 2N6491
RCS617 80 20-70 5 4 115 15 2.5 1.9" 1.5" TO-3 RCS618
2N6674 300 8 10 2 175 15 15 0.7 0.5 TO-204MA _
2N6676 300 8 15 3 175 15 15 - - TO-204MA -
RCA9113 300 15 min. 5 3 175 15 20 1.03* 0.75 x TO-3/ -
TO-204MA
RCA9113A 350 15 min. 5 3 175 15 20 1.03* 0.76 x TO-3/ -
TO-204MA
2N6677 350 8 15 3 175 15 15 _ _ TO-204MA _
2N6675 400 8 10 2 175 15 15 0.7 0.5 TO-204MA _
2N6678 400 8 15 3 175 15 15 - - TO-204MA -
RCA9113B 400 15 min. 3 3 175 15 20 1.03* 0.75X TO-3/ -
TO-204MA
IC = 12 to 20 A, fj = 50 to 100 MHz
2N6479%" 60 20-300 12 2 87 12 100 _ _ Radial" _
2N6481% 60 20-300 12 2 117 12 100 _ _ Radial _
2N5039 75 20-100 10 5 140 20 60 0.5@ 0.5 TO-3 _
2N6480%" 80 20-300 12 2 87 12 100 _ Radial" _
2N6482% 80 20-300 12 2 117 12 100 - - Radial -
2N5038 90 20-100 12 5 140 20 60 0.5@ 0.5 TO-3
2N6496 110 12-100 8 2 140 15 60 0.5@ 0.5 TO-3 -
IC = 25 to 50 A, fj = 0.2 to 1 MHz
2N3771 40 5 min. 30 4 150 30 0.2 _ _ TO-3 _
2N5301 40 5 30 3 200 30 2 2@ 1 TO-204MA _
2N5302 60 5 30 3 200 30 2 2@ 1 TO-204MA _
BDY29 75 15-60 15 2 220 30 0.2 _ _ TO-3 _
2N5303 80 5 20 3 200 30 2 2@ 1 TO-204MA _
IC = 25 to 50 A, fj = Z5 to 25 MHz
2N3264 60 20-80 15 3 125 25 20 0.5 0.5 Radial
2N3266 60 20-80 15 3 125 25 20 0.5 0.5 TO-63 _
2N5885 60 4 25 4 200 25 4 0.7@ 0.8 TO-204MA _
2N6326 60 6 30 4 200 30 3 0.45 0.9* TO-204MA _
2N5886 80 4 25 4 200 25 4 0.7@ 0.8 TO-204MA -
2N6327 80 6 30 4 200 30 3 0.45 0.9* TO-204MA
2N3263 90 25-75 15 3 125 25 20 0.5 0.5 Radial _
2N3265 90 25-75 15 3 125 25 20 0.5 0.5 TO-63 _
2^6546 300 6 10 2 175 15 6 1.05 0.7 TO-204MA -
IC = 25 to 50 A, fy = 50 to 100 MHz
2 N 6032 90 10-50 50 2.6 140 50 50 1@ 0.5 Mod. TO-3
2N5671 90 20-100 15 2 140 30 50 0.5 0.5 TO-3 _
2N6033 120 10-50 40 2 140 40 50 1@ 0.5 Mod. TO-3 _
2N5672 120 2a 100 15 2 140 30 50 0.5 0.5 TO-3 _
IC>60A,fy=0.4MHz
2N5575 50 10-40 60 4 300 80 0.4 15 15 Mod. TO-3
2N5578 70 10-40 40 3 300 60 0.4 15 15 Mod. TO-3 -
^Measured at same current level as hp^ unless otherwise indicated •At Cl
:
6A *At C = 4A *t FF @t r
*
12 Check availability in Europe, the Middle East, and Africa. 'Atl C :
2A v CER< su s> *Atl C <
10 A % Radiation hardened
-

P-N-P SILICON POWER TRANSISTORS
Type No. v CEO' sus ) "FE «c VCE pt "c «T *0N I tf Package n-p-n
(Max.) (Max.) I Complement
V A V W A MHz MS
IC=-0.15to--1 A, fy = 0.2 to 1 MHz
BFT28 -100 20min. -0.010 -10 5 _1 25 - - TO-39 -
BFT19 -150 20 min. -0.050 -10 5 —1 25 — — TO-39 —
BFT28A -150 20min. -0.010 -10 5 —1 25 — — TO-39 —
RCS880* -150 2a 150 -0.050 -10 7.5 —1 15 — — TO-39 —
2N5415 -200 30-150 -0.050 -10 10 -1 15 - - TO-39 2N3440
BFT28B -200 20 min. -0.010 -10 5 -1 25 - - TO-39 -
BFT19A -250 20 min. -0.050 -10 5 —1 25 — — TO-39 —
BFT28C -250 20 min. -0.010 -10 5 —1 25 — — TO-39 —
RC881* -250 20 min. -0.035 -10 7.5 —1 15 — — TO-39 —
2N5416 -300 30-120 -0.050 -10 10 -1 15 - - TO-39 2N3439
RCS882* -300 20 min. -0.035 -10 7.5 -1 15 - - TO-39 -
BFT19B -350 20 min. -0.050 -10 5 -1 25 - - TO-39 —
IC=-0.15to--1 A, fj= 50 to 100 MHz
41503 -30 20 min. -0.150 -10 7 _1 60 — — TO-39 41502
2N4037 -40 50-250 -0.150 -10 7 —1 60 — — TO-39 2N3053
2N4036 -65 40-140 -0.150 -10 7 —1 60 0.11 0.1 TO-39 2N2102
2N4314 -65 50-250 -0.150 -10 7 -1 60 - - TO-39 —
IC= -1.5 to 2 A, fj= 2.5 to 25 MHz
BUX66 -150 10-150 -1 -5 35 -2 20 6 61 0.6 TO-66 BUX67
2N6211 -225 10-100 -1 -2.8 20 -2 20 6@ 0.6 TO-66 2N3584
BUX66A -250 10-150 -1 -5 35 -2 20 6@ 0.6 TO-66 BUX67A
2N6212 -300 10-100 -1 -3.2 20 -2 20 6@ 0.6 TO-66 2N3585
BUX66B -300 10-150 -1 -5 35 -2 20 0.6 @ 0.6 TO-66 BUX67B
2N6213 -350 10-100 -1 -4 20 -2 20 6@ 0.6 TO-66 2N3585
BUX66C -350 10-150 -1 -5 35 -2 20 6@ 0.6 TO-66 BUX67C
2N6214 -400 10-100 -1 -5 20 -2 20 0.6 @ 0.6 TO-66 -
IC=-1.5to- 2 A, fj = 50 to 100 MHz
RCP704 -30 50 min. -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP705
RCP706 -30 20 min. -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP707
RCP700A -40 50-250 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP701A
RCP702A -40 30-150 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP703A
2N5323 -50 40-250 -0.5 -4 10 -2 50 0.1 1* TO-39 2N5321
2N6181 -50 40-250 -0.5 -4 25 -2 50 0.1 1* Plastic TO-5 2N6179
RCP700B -60 50-250 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP701B
RCP702B -60 30-150 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP703B
RCP704B -60 50 min. -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP705B
RCP706B -60 20 min. -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP707B
2 N 5322 -75 30-130 -0.5 -4 10 -2 50 0.1 1* TO-39 2N5320
2N6180 -75 30-150 -0.5 -4 25 -2 50 0.1 1* Plastic TO-5 2N6178
RCP700C -80 50-250 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP701C
RCP702C -80 30-150 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP703C
RCA1A04* -95* 50 min. -0.1 -4 10 -2 50 - - TO-39 RCA1A03
RCP700D -100 50-250 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP701D
RCP702D -100 30-150 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP703D
IC=-2.5to- 5 A, fy = 2.5 to 25 MHz
2N4915 80 7 5 2 87.5 5 4 — — TO-204MA 2N4906
2N4914 60 7 5 2 87.5 5 4 — — TO-204MA 2N4905
2N4913 40 7 5 2 87.5 5 4 — — TO-204MA 2N4904
2N4904 -40 25 -2.5 -2 87.5 -5 4 — — TO-204MA 2N4913
2N5783 -40 4 min. -3.2 -2 10 -3.5 8 0.5O 2.5*0 TO-39 2N5786
RCA30* -40 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB RCA29
RCA32* -40 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB RCA31
RCS30* -40 15-150 -1 -4 30 -3 3 0.2 1* TO-66 RCS29
RCS32* -40 25 min. -1 -4 40 -5 3 0.2 1* TO-66 RCS31
TIP30 -40 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB TIP29
TIP32 -40 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB TIP31
BD240 -45 15 min. -1 -4 30 -4 3 — — TO-220AB B0239
BD242 -45 25 min. -1 -4 40 -5 3 — — TO-220AB BD241
2N5782 -50 4 min. -3.2 -4 10 -3.5 8 0.5O 2.5*0 TO-39 2N5785
2 N 4905 -60 25 -2.5 -2 87.5 -5 4 - - TO-204MA 2N4914
BD240A -60 15 min. -1 -4 30 -4 3 _ _ TO-220AB BD239A
BD242A -60 10 min. -3 -4 40 -5 3 — — TO-220AB BD241A
RCA30A* -60 15-150 -1 -4 30 -5 3 0.2 1* TO-220AB RCA29A
RCA32A* -60 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB RCA31A
RCS30A* -60 15-150 -1 -4 30 -3 3 0.2 1* TO-66 RCS29A
*
^Measured at same current level as hpg unless otherwise indicated V CER< SUS> *tOFF
Check availability in Europe, the Middle East, and Africa. OAt c = 1A
l
13
P-N-P SILICON POWER TRANSISTORS (Cont'd)

Type No. VcEO< sus ) hFE "c VCE PT ic *T tON tf Package n-p-n
V A V W A MHz MS
IC = -2.5 to -5 A, fj = 2.5 to 25 MHz (cont'd)
RCS32A* -60 25 min. -1 -4 40 -5 3 0.2 1* TO-66 RCS31A
TIP30A -60 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB TIP29A
TIP32A -60 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB TIP31A
2N5781 -65 20-100 -1 -2 10 -3.5 8 0.5 2.5* TO-39 2N5784
2N4906 -80 25 -2.5 -2 87.5 -5 4 - - TO-204MA 2N4915
BD240B -80 15 min. -1 -4 30 -4 3 _ _ TO-220AB BD239B
RD242B -80 25 min. -1 -4 40 -5 3 — — TO-220AB BD241B
RCA30B* -80 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB RCA29B
RCA32B* -80 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB RCA31B
RCS30B* -80 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB RCS29B
RCS32B* -80 25 min. -1 -4 40 -5 3 0.2 1* TO-66 RCS31B
TIP30B -80 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB TIP29B
TIP32B -80 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB TIP31B
2N6467 -100 5 min. -4 -4 40 -4 -5 — — TO-66 2N6465
2N6475 -100 2 min. -2.5 -4 40 -4 10 - - TO-220AB 2N6473
BD240C -100 15 min. -1 -4 30 -4 3 _ _ TO-220AB BD239C
BD242C -100 10 min. -3 -4 40 -5 -3 — — TO-220AB BD241C
RCA30C* -100 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB RCA29C
RCA32C* -100 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB RCA31C
RCS30C* -100 15-150 -1 -4 30 -3 3 0.2 1* TO-66 RCS29C
RCS32C -100 25 min. -1 -4 40 -5 3 0.2 1* TO-66 RCS31C
TIP30C -100 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB TIP29C
TIP32C -100 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB TIP32C
2 N 6468 -120 5 min. -4 -4 40 -4 5 — — TO-66 2N6466
2N6476 -120 2 min. -4 -2.5 40 -4 10 - - TO-220AB 2N6474
IC=-6to-10A,fT=2. 5 to 25 MHz
41501 -25 25 min. -1 -4 40 -7 10 — _ TO-220AB 41500
2N6110 -30 2.3 min. -7 -4 40 -7 10 — _ TO-220AA 2N6289
2N6111 -30 2.3 min. -7 -4 40 -7 10 — _ TO-220AB 2N6288
2N5956 -40 5 min. -6 -4 40 -6 5 — _ TO-66 2N6374
RCA42* -40 15-150 -3 -4 65 -7 3 0.3 - 0.7** TO-220AB RCA41
BD244 -45 15 min. -3 -4 65 -7 3 _ _ TO-220AB BD243
BD277 -45 30-1 50 -1.75 -2 70 -7 10 — _ TO-220AB _
2N6108 -50 2.3 min. -7 -4 40 -7 10 — _ TO-220AA 2N6291
2N6109 -50 2.3 min. -7 -4 40 -7 10 — _ TO-220AB 2N6290
2N5955 -60 5 min. -6 -4 40 -6 5 - - TO-66 2N6373
2N5875 -60 4 10 4 150 10 20 _ _ TO-204MA _
BD244A -60 15 min. -3 -4 65 -7 3 — — TO-220AB BD243A
RCA42A* -60 15-150 -3 -4 65 -7 3 0.3* 0.7*» TO-220AB RCA41A
2N6106 -70 2.3 min. -7 -4 40 -7 10 — — TO-220AA 2N6293
2N6107 -70 2.3 min. -7 -4 40 -7 10 - - TO-220AB 2N6292
2N5954 -80 5 min. -6 -4 40 -6 5 _ _ TO-66 2N6372
2N5876 -80 4 10 4 150 10 20 — — TO-204MA _
BD244B -80 15 min. -3 -4 65 -7 3 — _ TO-220AB BD243B
RCA42B* -80 15-150 -3 -4 65 -7 3 0.3 - 0.7 *• TO-220AB RCA41B
2N6248 -100 5 min. -10 -4 125 -10 10 - - TO-3 -
BD244C -100 15 min. -3 -4 65 -7 3 _ _ TO-220AB BD243C
RCA42C* -100 15-150 -3 -4 65 -7 3 0.3* 0.7* # TO-220AB RCA41C
IC=-12to-20A,fT=2 I to 25 MHz
2N6469 -40 5 min. -15 -4 125 -15 5 _ _ TO-3 2N6470
2 N 6489 -40 5 min. -15 -4 75 -15 5 — _ TO-220AB 2N6486
2 N 6594 -40 5-100 -5 -4 100 -12 2.5 1.9" 1.5" TO-3 2N6594
2 N 5879 -60 4 15 4 160 15 4 — _ TO-204MA 2N5881
2 N 6246 -60 5 min. -15 -4 125 -15 5 - - TO-3 2N6471
2 N 6490 -60 5 min. -15 -4 75 -15 5 _ _ TO-220AB 2N6487
BDX18 -60 20 -4 -4 115 -15 4 — _ TO-204MA 2N3055
MJ2955 -60 20-70 -4 -4 115 -15 2.5 1.9" 1.5" TO-3 2N3055
2N6247 -80 5 min. -15 -4 125 -15 5 — _ TO-3 2N6472
2N6491 -80 5 min. -15 -4 75 -15 5 - - TO-220AB 2N6488
RCS618 -80 20-70 -5 -4 115 -15 25 1.9" 1.5" TO-3 RCS617
2 N 5880 -80 4 15 4 160 15 4 — _ TO-204MA 2N5882
RCA9116E -100 10 -7.5 -2 200 -20 2 — — TO-204MA RCA8638E
RCA9116D -120 10 -10 -2 200 -20 2 — — TO-204MA RCA8638D
2 N 6609 -140 15 -8 -4 150 -16 2 - - TO-204MA RCA3773
MJ15004 -140 10 -10 -2 250 -20 2 _ _ TO-204MA MJ15003
MJ15002 -140 25 4 2 200 -15 2 — — TO-204MA MJ 15001
RCA9116C -140 10 -10 -2 200 -20 2 — — TO-204MA RCA8638C
1
RCS618 -80 20 -5 -4 115 -15 2.5 — — TO-204MA RCS617
^Measured at same current leve as hfE unless otherwise ir idicated •At C = 6A
l «\ *to FF "At IC = 2A
*Check availability in Europe, t he Middle East, and Africa .
14
N-P-N MONOLITHIC DARLINGTON TRANSISTORS
Current Gain
Type No.
Vceo(sus) hpE ic VCE T
(Max.)
4
ic
(Max.) Package p-n-p
V A V W A Complement
IC (Max.) »4A, f UNITY GAIN * 20 MHz for a " tVP"
RCS683 40 1000 min. 2 3 10 4 TO-39 —
RCS683A 60 1000 min. 2 3 10 4 TO-39 —
RCS683B 80 1000 min. 2 3 10 4 TO-39 —
IC (Max.) - 8 A, fuNITY GAIN " 20 MHz for all types

2N6055 60 750-18,000 4 3 100 8 TO-3 -
2N6300 60 100 8 3 75 8 TO-213MA —
RCA 120* 60 1000 min. 3 3 65 8 TO-220AB RCA125
TIP120 60 1000 min. 3 3 65 8 TO-220AB TIP125
RCA 1000 60 1000 min. 3 3 90 8 TO-3 -
2N6056 80 750-18,000 4 3 100 8 TO-3 _
2N6301 80 100 8 3 75 8 TO-213MA —
2N6530 80 1000-10,000 5 3 65 8 TO-220AB —
2N6534 80 1000-10,000 5 3 36 8 TO-66 _
RCA121* 80 1000 min. 3 3 65 8 TO-220AB RCA126
RCA 1001 80 1000 min. 3 3 90 8 TO-3 _
TIP121* 80 1000 min. 3 3 65 8 TO-220AB TIP126
2N6531 100 500-10,000 3 3 65 8 TO-220AB —
2N6532 100 1000-10,000 5 3 65 8 TO-220AB —
2N6536 100 500-10,000 3 3 36 8 TO-66 -
2N6536 100 1000-10,000 5 3 36 8 TO-66 _
RCA 122* 100 1000 min. 3 3 65 8 TO-220AB —
TIP122 100 1000 min. 3 3 65 8 TO-220AB TIP127
2N6533 120 1000-10,000 3 3 65 8 TO-220AB —
2N6537 120 1000-10,000 3 3 36 8 TO-66 -
IC (Max.) - 1 A, f UNITY GAIN * 20 MHz for all types
2N63S3 40 1000-20,000 5 3 100 10 TO-3 RCA8350
2N6386 40 1000-10,000 3 3 65 10 TO-220AB RCA8203
BDX33 45 750 min. 4 3 70 10 TO-220AB BDX34
BDX83 45 1000 min. 5 3 125 10 TO-3 _
2N6384 60 1000-20,000 5 3 100 10 TO-3 RCA8350A
2N6387 60 1000-20,000 5 3 65 10 TO-220AB RCA8203A
BDX33A 60 750 min. 4 3 70 10 TO-220AB BDX34A
BDX83A 60 1000 min. 5 3 125 10 TO-3 —
2N6385 80 1000-20,000 5 3 100 10 TO-3 RCA8350B
2N6388 80 1000-20,000 5 3 65 10 TO-220AB RCA8203B
BDX33B 80 750 min. 3 3 70 10 TO-220AB RDX34B
BDX83B 80 1000 min. 5 3 125 10 TO-3 —
BDX33C 100 750 min. 3 3 70 10 TO-220AB BDX34C
BDX83C 100 1000 min. 5 3 125 10 TO-3 _
BDX33D 120 750 min. 3 3 70 10 TO-220AB -
P-N-P MONOLITHIC DARLINGTON TRANSISTORS

Current Gain
vceo(m») hpE ic VC E ,PT ic

Type No. (Max.) (Max.) Package n-p-n
IC - -8 A, f UNITY GAIN " 20 MHz for all types
RCA820'3 -40 106646,606 -3 -3 66 -8 TO-220AB 2N6386
TIP125 -60 1000 mm. -3 -3 65 -8 TO-220AB TIP120
RCA 125* -60 1000 min. -3 -3 65 -8 TO-220AB RCA120
TIP126 -80 1000 min. -3 -3 65 -8 TO-220AB TIP121
RCA 126* -80 1000 min. -3 -3 65 -8 TO-220AB RCA121
TIP127 -100 1000 min. -3 -3 66 -8 TO-220AB TIP122
Check availability in Europe, the Middle East, and Africa
15
P-N-P MONOLITHIC DARLINGTON TRANSISTORS (cont'd)
Current Gain
VcEO< sus ) hFE "C VCE PT •c

Type No. (Max.) (Max.) Package n-p-n
IC (Max.) - 10 A, fUNITY GAIN = 20 MHz for all types
2 N 6648 -40 1000,20,000 -3 -3 70 -10 TO-204MA 2N6383
2N6666 -40 1000 -3 -3 65 -8 TO-220AB 2N6386
RCA8350 -40 1000-20,000 -5 -5 70 -10 TO-3 2N6383
BDX34 -45 750 min. -4 -3 70 -10 TO-220AB BDX33
2N6649 -60 1000-20,000 -3 -3 70 -10 TO-204MA 2N6384
2N6667 -60 1000 -5 -3 65 -10 TO-220AB 2N6387
BDX34A -60 750 min. -4 -3 70 -10 TO-220AB BDX33A
RCA8203A -60 1000-20,000 -5 -3 65 -10 TO-220AB 2N6387
RCA8350A -60 1000-20,000 -5 -3 70 -10 TO-3 2N6384
2N6650 -80 1000-20,000 -3 -3 70 -10 TO-204MA 2N6385
2 N 6668 -80 1000 -5 -3 65 -10 TO-220AB 2N6388
BDX34B -80 750 min. -3 -3 70 -10 TO-220AB BOX33B
RCA8203B -80 1000-10,000 -5 -3 65 -10 TO-220AB 2N6388
RCA8350B -80 1000-20,000 -5 -3 70 -10 TO-3 2N6385
BDX34C -100 750 min. -3 -3 70 -10 TO-220AB BDX33C
16
Transistors for Audio-Amplifier Applications
NPN NPN
RCA RCA H FE C ' V CE V CER
or Package H FE V CE V CER PT or Package ' PT
Types 'C' Types PNP
PNP
Full Complementary Output Darlington Pairs Quasi Complementary Output Transistors (Cont'd)
RCA1 A03 NPN TO-39 70 0.3A/4V 95V 10W
2N6385 NPN TO-3 1000 5A/3V 80V 100W -0.3A/-4V -95 V 10W
1000 -5A/3V -80 V 70W RCA1A04 PNP TO-39 70
2N6650 PNP TO-3
RCA1A05 PNP TO-39 50 -0.15A/-4V -75V 7W
BDX33 NPN TO-220 750 4A/3V 100 V 70W RCA1A06 NPN TO-39 50 0.15A/4V 75V 5W
BDX34 PNP TO-220 750 ^*A/-3V -100V 70W NPN 4A/4V 95V 115W
80V 65 W
RCA1B01 TO-3 20
RCA1C15 PNP TO-220 1000 5A/3V 2A/5V 200V 150W
RCA1B04 NPN TO-3 15
RCA1C16 NPN TO-220 1000 -5A/-3V -80V 65 W 2A/5V 250V 150W
90W RCA1B05 NPN TO-3 15
RCA900 PNP TO-3 1000 -5A/-3V -60V 4A/4V 100V 150W
90W RCA1B06 NPN TO-3 10
RCA1000 NPN TO-3 1000 5A/3V 60 V 2A/5V 250V 150W
-100V 160W RCA1B09 NPN TO-3 40
TA9117 PNP TO-3 750 -10A/-3V NPN TO-220 1A/4V 100V 40W
10A/3V 100V 160W RCA1C03 50
TA9118 NPN TO-3 750
RCA1C04 PNP TO-220 50 -1 A/-4V -100V 40W
Full Complementary Output Transistor Pairs RCA1C09 NPN TO-220 20 4A/4V 65 V 75W
RCA1C12 NPN TO-220 40 1A/2V 120V 40 W
2N3055 NPN TO-3 20 4A/4V 70V 115W -120V 40W
RCA1C13 PNP TO-220 40 -1A/2V
BDX18 PNP TO-3 20 -4A/-4V -70V 115W 40 V 50W
RCA1C14 NPN TO-220 20 3A/4V
2N6222 NPN TO-220 30 3A/4V 80 V 40W
2N6107 PNP TO-220 30 -3A/-4V -80 V 40W Complernentary Driver Pairs/Predrivers
2N6488 NPN TO-220 20 5A/4V 85 75W 100V 5W
-5A/-4V -85 V 75W 2N2102 NPN TO-39 25 0.1A/5V
2N6491 PNP TO-220 20
NPN TO-39 40 20 mA/10V
400V 10W
70W
100 V 2 N 3440
BD239-243 NPN TO-220 15 3A/4V 7W
2N4036 PNP TO-39 50 0.15A/10V 65 V
BD240-244 PNP TO-220 15 -3A/-4V -100V 70W -
2N5320 NPN TO-39 40 0.5A/4V 90V 10W
RCA1A05 PNP TO-39 50 -0.15A/-4V -75V 7W 10W
2N5322 PNP TO-39 40 -0.5A/-4V -90 V
RCA1A06 NPN TO-39 50 0.15A/4V 75V 5W -50m A/-10V -300V 10W
RCA1C05 NPN TO-220AB 3A/4V 50V 40 W
2N5415 PNP TO-39 20
20
BD239-243 NPN TO-220 15 3A/4V 100V 70W
RCA1 C06 PNP TO-220 A B 20 -3A/-4V -50V 40W -100V 70W
75W BD240-244 PNP TO-220 15 -3A/-4V
RCA1 C07 NPN TO-220 20 4A/4V 65
NPN 0.01 A/4V 70V 5W
RCA1 C08 PNP TO-220 20 -4A/4V -65 75W RCA1A01 TO-39 40
40W RCA1A08 PNP TO-39 30 -0.1A/-10V -50V 7W
RCA1C10 NPN TO-220 50 1.5A/4V 40
RCA1A09 NPN TO-39 20 0.01 A/10V 175V 10W
RCA1C11 PNP TO-220 50 -1.5A/-4V -40 40W -0.01A/-10V-175V 10W
RCP700 NPN TO-202 50 0.5A/4V 100V 10W RCA1A10 PNP TO-39 40
RCA1A15 NPN TO-39 20 0.01A/10V 100 V 10W
RCP701 PNP TO-202 50 -0.5A/4V -100V 10W -0.01A/-10V-100V 10W
85V 115W RCA1A16 PNP TO-39 40
RCS617 NPN TO-3 20 5A/4V
RCA1E02 NPN TO-66 30 0.3A/2V 175V 35W
RCS618 PNP TO-3 20 -5A/4V -85 V 115W -0.3A/-2V -175V 35W
RCA1E03 PNP TO-66 30
TA8638 NPN TO-3 15 8A/4V MOV 200W RCP131 NPN TO-202 50 50m A/1 0V 350V 10W
TA9116 PNP TO-3 15 -8A/4V -140V 200W RCP700 NPN TO-202 50 0.5A/4V 100 V 10W
Quasi Complementary Output Transistors RCP701 PNP TO-202 50 -0.5A/4V -100V 10W
2N3055 NPN TO-3 20 4A/4V 70V 115W
2N3055 Protection Circuit Types
NPN TO-3
, 20 5A/4V 80 V 150W
(Hometaxia RCA1A18 NPN TO-39 40 A/4V
0.01 10V 5W
2N3442 NPN TO-3 20 3A/2V 150V 150W RCA1 A19 PNP TO-39 40 -0.01A/-4V -10V 7W
2N3772 NPN TO-3 15 10A/4V 70V 250W
2N3773 NPN TO-3 15 8A/4V 160V 250W
2N5298 NPN TO-220 20 5A/4V 75V 75W
2N5496 NPN Input Device Types
TO-220 20 3.5A/4V 70V 36W
2N6103 NPN TO-3 20 5A/4V 75V 75W RCA1A02 PNP TO-39 30 -0.1A/-10V -50V 7W
2N6292 NPN TO-220 30 2.5A/4V 80V 40W RCA1A07 NPN TO-39 50 0.01A/10V 40V 5W
2 N 6488 NPN TO-220 20 5A/4V 90V 75W RCA1A11 NPN TO-39 40 0.01A/10V 175V 10W
2N6510 NPN TO-3 10 4A/3V 300 V 120W RCA1A17 NPN TO-39 40 0.01 A/4V 90V 5W
BUX18 NPN TO-3 10 4A/3V 375V 120W
17
Power Hybrid Comparison Chart
Multi-Purpose High-Power Operational Amplifiers
HC2000H* HC2500
RESISTANCE VALUES IN OHMS

CAPACITANCE VALUES IN MICROFARADS
. UNLESS OTHERWISE SPECIFIED
BASE PLATE /MOUNTING FLANGE: SEE DIMENSIONAL OUTLINE
92CS-I7574R2 "ELECTRICALLY ISOLATED FROM INTERNAL CIRCUITRY
Schematic diagram of type HC2000H operational amplifier. Schematic diagram of type HC2500 operational amplifier.
HC2000H* - Applications HC2500 - Applications
Motor control, magnetic-deflection amplifiers, solenoid Low-distortion, high-power amplifiers for audio and other
driver, low-frequency oscillator amplifier, voltage regu- end uses where internal overload protection is not required.
lators, constant current source, inverting and non-inverting
unity-gain amplifier.
Ratings and Features for HC2000H* and HC2500

Ratings: Features:
SUPPLY VOLTAGE: Bandwidth: 30 kHz at 60 W

Between leads 1 and 10 75 V
High power output: up to 100 W (rms)
OUTPUT CURRENT (peak) 7 A Single or split power supply:
OPERATING TEMPERATURE RANGE . . . -55 to +150°C 30 to 75 V single, ±15 to ±37.5 V split
COMPARISON CHART
IM DlST. OUTPUT OPERATING FREQUENCY

TYPE PROTECTION COMMUTATING
@2Q0 mW NETWORK MODE COMPENSATION DIODES
HC2000H* LC FILTER
0.6% YES CLASS B YES
ON OUTPUT
HC2500 0.06% NO CLASS AB CAPACITOR ON NO

SIGNAL TERMINALS
Socket for both types: RCA part DG-293A, or
Electronic Essentials, 210 Elizabeth St., New York, N.Y. 10012, Part No. MS5-1000
* HC2000H also available to MIL-spec as HC2000H/1, 2, 3, 4.

(see data bulletin file no. 789, orpg. 404 in the "High- Reliability Devices" DATABOOK SSD-230.)
18.
RF Power Transistor Selection Charts
Collector- Min. Output Data Min. Collector- Min.
Operating
Package Supply Frequency Power (W) Sheet Output Supply Power
Type Type Frequency Voltage
Type (MHz) or Noise File
Power Gain
Voltage (V) (MHz)
(W) (V)
Figure (dB) No.
2N2857 TO-72 6-15(V CE 450 NF = 4.5 61 UHF
)
For VHF and Mobile-Radio Applications
2N2876 TO-60 28 50 10 32
2N3229 TO-60 50 50 15 50
2N4427 175 1 12 10
2N3375 TO-60 28 400 3 386
2N5913 175 1.75 12.5 12.4
2N3478 TO-72 6-15(V CE ) 200 NF =4.5 77
40280 175 1 13.5 9
2N3553 TO-39 28 175 2.5 386 40964 470 0.4 12 6
2N3600 TO-72 6-15(V C E> 200 NF = 4.5 83 40965 470 0.5 12 7
2N3632 TO-60 28 175 13.5 386
2N3733 TO-60 28 400 10 72 For Aircraft-Radio Applications
2N3839 TO-72 6-15(V CE ) 450 NF = 3.9 229
2N3866 TO-39 28 400 1 80 40290 118-136 2 12.5 6
2N3866A TO-39 28 800 1
- 40291 118-136 2 12.5 6
2N4012 TO-60 28 1000 2.5 90 40292 118-136 6 12.5 4.8
(tripler)
2N5102 118-136 15 24 4
2N4427 TO-39 12 175 1 228
2N4440 TO-60 28 400 5 217 For Single-Sideband Applications
and For Military Communication!
2N4932 TO-60 13.5 88 12 249
2N4933 TO-60 24 88 20 249 40936 30 20 (PEP) 28 13
2N5070 TO-60 28 30 25 (PEP) 268 2N5070 30 25 (PEP) 28 13
2N5071 TO-60 24 76 24 269 2N5071 76 24 24 9
2N5090 TO-60 28 400 1.2 270 2N3866 400 1 28 10
2N5102 TO-60 24 136 15 279
2N5109 TO-39 15 200 NF = 3 281 For CB-Radio Applications
2N5179 TO-72 6(V CE ) 200 NF = 4.5 288
2N5180 TO-72 10<V CE ) 200 NF = 4.5 289
10
2N6670 27 4 12.5
2N5913 TO-39 12 470 2 423
2N6670 TO-202AB 12.5 27 4 1091 For CATV/MATV and Small-Signal
40280 TO-39 13.5 175 1 68 Low-Noise Applications
40290 TO-39 12.5 135 2 70
70 2N3478 200 4.5 6.15 11.5
40291 TO-60 12.5 135 2
2N5179 200 4.5 6 15
40292 TO-60 12.5 135 6 70
74 2N5109 200 3 15 11
40340 TO-60 13.5 50 25
40608 200 3 15 11
40341 TO-60 24 50 30 74 40894 200 3 12 15
40606 Premium high-reliabilit / version of 2 N3632 600 40895 200 - 12 15
40608 TO-39 15 200 NF = 3 356 40896 200 - 12 15
40894 TO-72 12 200 rf amp. 548 2N3600 200 4.5 15 17
40895 TO-72 12 200 mixer 548 40897 200 - 12 18
200 548 2N2857 450 4.5 6 12.5

40896 TO-72 12 Osc.
amp. 548 2N3839 450 3.9 6 12.5
40897 TO-72 12 10.7 if
40936 TO-60 28 30 20 (PEP) 551

40964 TO-39 12 470 0.4 581 For Microwave Applications
40965 TO-39 12 470 05 581
41024 TO-39 28 1000 1 658 41024 1000 I
5 I
28 I 5
Minimum Output Pow er = 1 W
Collector Efficiency = 35%
.19
Triac Product Matrix
RCA TO-205MA/TO-5 Mod. TO-205MA/TO-5 With TO-202AB

Triacs Modified Heat Radiator VERSATAB
'T(RMS) 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A
l
TSM (60 Hz) 25A 25A 25A 25A 25A 25A 25A 25A 25A 25A
VdROM(V) 50 T2300F T2301F T2302F T2303F T2310F T2311F T2312F T2313F T2320F T2327F
100 T2300A T2301A T2302A 2N5754 T2310A T2311A T2312A T2313A T2320A T2327A
200 T2300B T2301B T2302B 2N5755 T2310B T2311B T2312B T2313B T2320B T2327B
•a
300 T2320C T2327C
•a 400 T2300D T2310D T2302D 2N5756 T2310D T2311D T2312D T2313D T2320D T2327D
c
CO
co
500 T2320E T2327E
600 2N5757 T2313M
lGT< m A) l+, III- 3 4 10 25 3 4 10 25 3 5
I", III+ 3 4 10 40 3 4 10 40 3 5
V GT (V) All Modes 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2
V VDROM(V) 100 T2306A T2316A
<o _ 200 T2306B T2316B
400 T2306D T2316D
O CO
lGT< mA ) l
+
,
lll
+ 45 45
<o
N Vgt< v > l
+
. Ill"
1
"
1.5 1.5
'T(RMS) 0.5A 0.5 A
c VDROM(V) 200 T2304B T2305B

I- 2 400 T2304D T2305D
6 S2
lGT< mA
+
o V > l
, III- 10 25
«8 I", 111+ 10 40
V G -r(V) All Modes 2.2 2.2
rO-213MA/
TO-66
RCA TO-202AB TO-213MA/ With Heat TO-220AB
Triacs VERSATAB TO-66 Radiator VERS AW ATT
ISOWATT*
!t(RMS) 2.5A 2.5A 6A 15A 6A 6A 6A 8A 8A 8A
l
TSM (60 Hz) 25A 25A 100 A 100A 100A 60A 80A 100A 100A 100A
VDROM(V> 50 T2322F T2323F T2801F T2800F T2802F T2850F
100 T2322A T2323A T2801A T2800A T2802A T2850A
"O
CD
200 T2322B T2323B T2700B T4700B T2710B T2500B T2801B T2800B T2802B T2850B
oc 300 T2322C T2323C T2801C T2800C T2802C
CO
*«
CO 400 T2322D T2323D T2700D T4700D T2710D T2500D T2801D T2800D T2802D T2850D
500 T2322E T2323E T2801E T2800E T2802E T2850E
600 T2800M T2802M
+
lGT< mA ) l
,
III- 10 25 25 30 25 25 80 25 50 25
I-, III+ 10 40 40 80 40 60 - 60 - 60
vgt< v A " Modes 2.2 2.2 2.2 2.5 2.2 2.5 4.0 A 2.5 2.5
A 2.5
>
a> VDROM(V) 100

" _ 200 T2706B T4706B T2716B T2506B T2806B T2856B
400 T2706D T4706D T2716D T2506D T2806D T2856D
O CO lGT< mA ) l
+
, lll
+ 45 45 45 45 45 45
N Vgt< v > l
+ , III
+ 1.5 1.5 1.5 1.5 1.5 1.5
•ISOWATT — Mounting tab electrically isolated from electrodes only
20
RCA TO-220AB Press- Fit

Stud
Triacs VERSAWATT (TO-203AA)
'T(RMS) 8A 12A 12A 12A 12A 10A 15A 10 15

l
TSM (60Hz) 100 A 120A 120A 120A 100 A 100 A 100A 100A 100 A
v D rom(v) 50 T4101F T4100F T4111F T4110F
100
200 T2851B 2N6342A 2N6346A SC149B TIC236B 2N5567 2N5571 2N5569 2N5573
o
300 T2851C
oc 400
CO
T2851D 2N6343A 2N6347A SC149D TIC236D 2N5568 2N5572 2N5570 2N5574
3> 500 T2851E SC149E T4101E T4100E T4111E T4110E
600 2N6344A 2 N 6348 SC149M T4101M T4100M T4111M T4110M
lGT< mA ) l+, III- 80 50 50 50 50 25 50 25 50
I", 111+ - - 75 50* 50* 40 80 40 80
Vqt(V) All Modes 3 2 2.5 2.5 2.5 2.5 2.5 2.5 2.5
Vdrom(V) 200 T4107B T4106B T4117B T4116B
400 T4107D T4106D T4117D T4116D
o a
600 T4107M T4106M
a*
O CO lQT< mA ) I+.III+ 45 45 45 45
0)
N V GT (V) All Modes 1.5 1.5 1.5 1.5
'T(RMS) 6A 10A 15A 6A 10A 15A

Vdrom(v) 200 T4105B T4104B T4103B T4115B T4114B T4113B
400 T4105D T4104D T4103D T4115D T4114D T4113D
6
o 2
» iGj(mA) + 111- 50 50 50 50 50 50
«8
l .
111+ 80 80 80
I",
80 80 80
v G t<v) All Modes 2.5 2.5 2.5 2.5 2.5 2.5
only
Press- Fit
With flex, leads, With flex, leads,
RCA Isolated encap. on iso- Isolated on encap., isolated TO-220AB
Triacs Stud lated-stud TO-3 flange on TO-3 flange VERSAWATT
'T(RMS) 10A 15A 10A 15A 10A 15A 10A 15A 15A 15A
I
TS m(60 Hz) 100A 100 A 100 A 100A 100A 100A 100A 100A 150A 150A
v D rom(V) 50 T4121F T4120F T4131F T4130F T4141F T4140F T4151F T4150F
100
o
(5 200 T4121B T4120B T4131B T4130B t4141B T4140B T4151B T4150B MAC 15-4 MAC15A-4
oc
is
400 T4121D T4120D T4131D T4130D T4141D T4140D T4151D T4150D MAC 15-6 MAC15A-6
55 500 T4121E T4120E T4131E T4130E T4141E T4140E T4151E T4150E
600 T4121M T4120M T4131M T413*0M T4141M T4140M T4151M T4150M MAC 15-8 MAC15A-8
lGT (m A) 1+ III- 25 50 25 50 25 50 25 50 50 50
I-, 111+ 40 80 40 80 40 80 40 80 - 75
Vqt(V) All Modes 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2 2.5
v D rom<v) 200 T4127B T4126B
400 T4127D T4126D
o a
600 T4127M T4126M
O CO lGT< m A) l+, 111+ 45 45
V
N V G T<V) All Modes 1.5 1.5
21
F B
F
RCA TO-220AB
Triacs VERSAWATT Press- Fit Stud Isolated Stud
'T(RMS) 15A 16A 16A 16A 30A 40A 30A 40A 30A 40A
l
T SM<60Hz) 150A 100A 150A 150A 300A 300A 300A 300A 300A 300A
v DR0M<V) 50 T6000F T6001 T6401F T6402F T6411F T6412F T6421F T6420F
100
a 200 SC151B TIC246B T6000B T6001 T6401B 2N5441 T6411B 2N5444 T6421B T6420B
(0
T3 300 T6000C T6001C
c
to 400 SC151D TIC246D T6000D T6001D T6401D 2N5442 T6411D 2N5445 T6421D T6420D
V)
500 SC151E T6000E T6001E T6401E T6402E T6411E T6412E T6421E T6420E
600 SC151M T6000M T6001M T6401M 2N5443 T6411M 2N5446 T6421M T6420M
lGT< mA ' l
+ ,
III" 50 50 50 80 50 50 50 50 50 50
I", III
+ 50* 50* 80 - 80 80 80 80 80 80
V GT (V) All Modes 2.5 2.5 2.5 3 2.5 2.5 2.5 2.5 2.5 2.5
VDROM<V) 200 T6006B T6407B T6406B T6417B T6416B T6427B T6426B

0)
o>
300 T6006C
CO
400 T6006D T6407O T6406D T6417D T6416D T6427D T6426D
o a 500 T6006E
O c/} 600 T6006M T6407M T6406M T6417M T6416M T6426M
0)
N l
GT (mA) l
+ , lll
+ 45 45 45 45 45 45 45
V GT (V) All Modes 1.5 1.5 1.5 1.5 1.5 1.5 1.5
'T(RMS) 25A 40A 25A 25A 40A

VdROM(V) 200 T6405B T6404B T6415B 2N5806 T6414B
c 400 T6405D T6404D T6415D 2N5807 T6414D
N O '500 2 N 5808
6
O 2
a>
600 2N5809
+
lGT< mA > l
,
III- 80 80 80 80 80
I-, lll
+ 120 120 120 150" 120
V GT (V) Modes 3 3 A
All 3 2.5 3
•1 mode only k
4 V for 111+ mode '80 mA for 1 mode
Press-Fit
RCA encap. on iso- Isolated on encap., isolated Overmold

Triacs lated-stud TO-3 flange on TO-3 flange Stud
'T(RMS) 30A 40A 30A 40A 30A 40A 60A 80A
l
TSM (60Hz) 300A 300A 300A 300A 300A 300A 600A 850A
v DROM< v > 50 T6431 T6441F T6440F T6451F T6450F T8411F T8410F
100
-a 200 T6431B T6430B T6441B T6440B T6451B T6450B T8411B T8410B
ID
•a 300
c
to 400 T6431D T6430D T6441D T6440D T6451D T6450D T8411D T8410D
V)
500 T6431E T6441E T6440E T6451E T6450E T8411E T8410E
600 T6431M T6430M T6441M T6440M T6451M T6450M T8411M T8410M
+ 50 50 50 50 50 50 75 75
iGTdmA) l , III-
I-, III
+ 80 80 80 80 80 80 150 150
v G t(v) All Modes 2.5 2.5 2.5 2.5 2.5 2.5 2.8 2.5
22
SCR Product Matrix
RCA TO-202AB TO-220AB TO-213MA/
SCR's TO-8 VERSATAB VERSAWATT TO-66
'T(RMS) 2A 4A 4A 4A 4A 4A 4A 4A 4A 4A 5A
l-TSM (60 Hz) 60A 20A 15A 30A 20A 20A 20A 35A 35A 35A 60A
v DROM 15 C106Q C107Q C108Q S106Q S107Q S108Q S2060Q S2061Q S2062Q
VRROM<V> 25
30 C106Y C107Y C108Y S106Y S107Y S108Y S2060Y S2061Y S2062Y
50 C106F C107F C108F S106F S107F S108F S2060F S2061F S2062F
100 C106Aj C107A C108A S106A S107A S108A S2060A S2061A S2062A
150
200 2N3528 C106B C107B C108B S106B S107B S108B S2060B S2061B S2062B 2N3228
250
300 S2060C S2061C S2062C
400 2N3529 C106D C107D C108D S106D S107D S108D S2060D S2061D S2062D 2N3525
500 C106E C107E C108E S106E S107E S108E S2060E S2061E S2062E
600 2N4102 C106M C107M C108M S106M S107M S108M S2060M S2061M S2062M 2N4101
lGT< mA ) 15 0.2 0.5 0.2 0.2 0.5 2 0.2 0.5 2 15
Vqt(V) 2 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 2
TO-213MA/
RCA TO-66 With TO-220AB
SCR's TO-213MA/TO-66 Heat Rad. VERSAWATT
FTO* FTO* FTO* FTO* FTO* FTO* FTO* FTO* FTO* FTO*
l-r(RMS) 5A 5A 5A 5A 5A 5A 5A 5A 5A 5A 5A
l
T $5 M (60 Hz) 80A 80A 80A 75A(lp M )
80A 80A 80A 80A 80A 80A 80A
v DR0M 100 S3704A S3714A
VRROM(V) 200 S3700B S3704B S2710B S3714B S5800B S5801B S5802B
250
300 S5800C S5801C S5802C
400 S3700D S3704D S2710D S5800O S5801D
S3714D S5802D
500 S3706E S5800E S5801E S5802E
600 S3705M S3700M S3704M S3701M S2710M S3714M S5800M S5801M S5802M
700 S3704S S3702S S3714S
750 S3703SF
lGT( mA > 30 40 40 35 45 40 15 40 50 50 50
Vqt(V) 4 3.5 3.5 4 4 4 2 3.5 2.5 2.5 2.5
Low-Pro- TO-205MA/
fileMod. TO-205MA/ TO-5 with
RCA TO-205MA/ TO-5 with Heat TO-220AB TO-204MA/ Press- Fit
SCR's TO-5 Heat Rad. Spreader VERSAWATT TO-3 TO-203AA
Ir(RMS) 7A 3.3A 7A 8A 10A 12 16 12.5 20A 35A

TSM (60 Hz)
l 100A 100A 100A 100A 100A 125 160 200A 200A 350A
v DROM 50 S122F S2800F 2N6394 2N6400
vrrom<v> 100 S122A S2800A 2N6395 2N6401 2N3668 S6200A 2N3870
150
200 S2600B S2610B S2620B S122B S2800B 2N6396 2 N 6402 2N3669 S6200B 2N3871
250
300 S122C S2800C S6000C S6100C
400 S2600D S2610D S2620D S122D S2800D 2N6397 2N6403 2N3670 S6200D 2N3872
500 S122E S2800E S6000E S6100E
600 S2600M S2610M S2620M S122M S2800M 2N6398 2N6406 2N4103 S6200M 2N3873
700 S122S S2800S S6000S S6100S
iQT(mA) 15 15 15 25 15 30 30 40 15 40
Vqt(V) 1.5 1.5 1.5 1.5 1.5 1.5 1.5 2 2 2
•FTO - Fast Turn-Off. Check availability in Europe, the Middle East, and Africa.
23
AA
SCR Product Matrix

Press-Fit
RCA Isolated encap. on iso- Isolated on encap., isolated
SCR's Stud Stud lated stud TO-3 flange on TO-3 flange

20A 35A 20A 35A 20A 35A 20A 35A 20A 35A
'T(RMS)
200A 350A 200A 350A 200A 350A 200A 350A 200A 350A
l
TSM (60Hz>
10° S6210A 2N3896 S6220A S6420A S6230A S6430A S6240A S6440A S6250A S6450A
VDROM
200 S6210B 2N3897 S6220B S6420B S6230B S6430B S6240B S6440B S6250B S6450B
VRROM<V)
400 S6210D 2N3898 S6220O S6420D S6230D S6430D S6240D S6440D S6250D S6450D
600 S6210M 2N3899 S6220M S6420M S6230M S6430M S6240M S6440M S6250M S6450M
\Qj{rr\A) 15 40 15 40 15 40 15 40 15 40
V QT <V) 2 2 2 2 2 2 2 2 2 2
Overmold
RCA Overmold Isolated
SCR's TO-208MA/TO-48 Stud Stud

Pulse
Modulator FTO* FTO # FTO*

16A 25A 35A 35A 35A 40A" 75A 75A
't(rms)
Hz) 125A 150A 150A 180 A 180A 400A 750A 750A
l
TSM<60
v DROM 15
VRROM<V) 25 2N1842A 2N681
30
50 2N1843A 2N682 2N3654
100 2N1844A 2N683 2N3650 2N3655 S8612A S8613A S8622A S8623A
150 2N1845A 2N684
200 2N1846A 2N685 2N3651 2N3656 S7310B S8612B S8613B S8622B S8623B
250 2N1847A 2N686
300 2N1848A 2N687 2N3652 2N3657 S7310C
400 2N1849A 2N688 2 N 3653 2N3658 S7310D S86120 S8613D S8622D S8623D
500 2N1850A 2N689 S7310E
600 2N690 S6493M S7410M S7412M S7310M S8612M S8613M S8622M S8623M
45 25 80 180 180 80 200 200 200 200
iQT(mA)
2 3 2 3 3 3 3 3
Vqt(V) 3.5 3
•FTO- Fast Turn-Off ASCR (Asymmetrical Silicon Controlled Rectifiers)
ITR Product Matrix

Overmold For Horizontal-Deflection Circuits
RCA Overmold Isolated
SCR's Stud Stud RCA TO-220AB
l-r(RMS) 100 100A ITR's* VERSAWATT
"TSM<60Hz) 1000 1000A Commutating Commutating
v DROM 15 Trace (Retrace) Trace (Retrace)
VRROM(V) 25 l
T (RMS) 8A 8A 8A 8A
30 "TSM<60 Hz) 90A 90A 90A 90A
50 VDROM(V) 300
100 S8610A S8611A S8620A S8621A 400
150 450 S3902DF
200 S8610B S8611B S8620B S8621B 500
250 550
300 600 S3901M
400. S8610D S8611D S8620D S86210 650 S3900MF S3901MF S3903MF
500 700 S3900S S3901S
600 S8610M S8611M S8620M S8621M 750 S3900SF
iQX(mA) 200 200 200 200 iQX(mA) 30 45
V G T<V> 3 3 3 3 V GT (V) 4 4
'Integrated Thyristor/Rectifiers
24.
GTO, Diac, and Rectifier Product Matrices
GTO Product Matrix Diac Product Matrix
RCA For Triggering Devices
TO-220AB
GTO's* VERSAWATT
RCA
l-r(DC) 15A 15A Diacs DO-204AC/DO-15
l
TS M<60Hz) 85A 85A D3202Y D3202U
Vdrxm(v) 100 G4000A G4001A 2A
pk 2A
200 G4000B G4001B ±v (BO) 29 min. 35 max. V 25 min. 40 max. V
400 G4000D G4001D +
l V(BO)l-l-V(BO)l ±3 max. V ±3 max. V
tgq
25/us 25ms |AV±| 9 min. V 9 min. V
GTO - Gate-Turn-Off SCR
Rectifier Product Matrix

Standard Types
RCA DO-203AA/ DO-203AB/

Rectifiers DO-4 DO-5
'0 6A 12A 20A 40A
•fsm 160A 240A 350A 800A
V RRM (V) 50 1N1341B 1N1199A 1N248C 1N1183A
100 1N1342B 1N1200A 1N249C 1N1184A
200 1N1344B 1N1202A 1N250C 1N1186A
300 1N1345B 1N1203A 1N1195A 1N1187A
400 1N1346B 1N1204A 1N1196A 1N1188A
500 1N1347B 1N1205A 1N1197A 1N1189A
600 1N1348B 1N1206A 1N1198A 1N1190A
Fast- Recovery Types
RCA DO-203AA/ DO-203AB/

Rectifier DO-4 DO-5
'o 6A 6A* 12A 12A* 20A 20A* 30A 40A
•fsm 75A 125A 150A 250A 225A 300A 300A 700A
Vrrm(V) 50 1N3879 D2406F 1N3889 D2412F 1N3899 D2520F 1N3909 D2540F
100 1N3880 D2406A 1N3890 D2412A 1N3900 D2520A 1N3910 D2540A
200 1N3881 D2406B 1N3891 D2412B 1N3901 D2520B 1N3911 D2540B
300 1N3882 D2406C 1N3892 D2412C 1N3902 D2520C 1N3912
400 1N3883 D2406D 1N3893 D2412D 1N3903 D2520D 1N3913 D2540D
500
600 D2406M D2412M D2520M D2540M
Reverse
Recovery
Time t rr Typ. - 200 ns - 200 ns - 200 ns - 200 ns
Max. 200 ns 350 ns 200 ns 350 ns 200 ns 350 ns 200 ns 350 ns
Check availability in Europe, the Middle East, and Africa.
.25
Power Devices Cross-Reference Guide
(Industry Type to Equivalent RCA Type)
This guide provides a quick reference to more than 2300 industry power devices (power transistors,
and triacs) and their nearest RCA replacements. The nearest RCA device
silicon controlled rectifiers, is
determined on the basis of electrical similarity as well as package similarity.
POWER TRANSISTORS
Industry RCA Industry RCA Industry RCA
Package Type Package Type Package Type Package
Type Package Type Package Type
2N656 TO-5 2N2102 TO-39 2N3022 TO-3 2N4902 TO-3 2 N 3464 TO-39 2N3053 TO-39
2N1132 TO-5 2N4037 TO-39 2N3023 TO-3 2N4902 TO-3 2N3597 TO-63 2N3266 TO-63
2N1132A TO-5 2N4037 TO-39 2N3024 TO-3 2N4904 TO-3
2 N 3598 TO-63 2N3266 TO-63
2N1420 TO-5 2N1711 TO-39 2N3025 TO-3 2N4905 TO-3
2N3599 TO-63 2N3265 TO-63
2N1507 TO-5 2N1711 TO-39 2N3026 TO-3 2N4905 TO-3
2N3665 TO-39 2N1893 TO-39
2N1565 TO-5 40360 TO-39 2N3036 TO-5 2N5320 TO-39
2N3672 TO-5 2N699 TO-39
2N1565A TO-5 40360 TO-39 2N3076 TO-36 2N6249 TO-3
TO-3 2N3712 TO-39 2N3440 TO-39
2N1573 TO-5 40409 TO-39HR 2N3079 TO-36 2N6511
2N6670 BF257 TO-39
2N1574 TO-5 40409 TO-39 HR 2N3080 TO-36 TO-3
2N2102 TO-39 2N3713 TO-3 2N3715 TO-3
2N1613S TO-5 2N1613 TO-39 2N3108 TO-39
2N3715 TO-3
2N1711S TO-5 2N1711 TO-39 2N3109 TO-39 2N1711 TO-39
2N3714 TO-3 2N3716 TO-3
2N1714 TO-5 2N1480 TO-39 2N3110 TO-39 2N3053 TO-39
2N3716 TO-3
2N1889 TO-5 2N699 TO-39 2N3114 TO-39 BF257 TO-39
2N1893S TO-5 2N1893 TO-39 2N3122 TO-5 2N5321 TO-39 2N3719 TO-39 2N5323 TO-39
2N1974 TO-5 40360 TO-39 2N3133 TO-39 40634 TO-39 2N3720 TO-39 2N5322 TO-39
TO-39 2N3134 TO-39 2N4037 TO-39 2N3738 TO-66 2N3584 TO-66
2N1975 TO-5 40360
2N1984 TO-5 40360 TO-39 2N3171 TO-3 2N6254 TO-3 2N3739 TO-66 2N3585 TO-66
2N1987 TO-5 2N697 TO-39 2N3174 TO-3 2 N 6248 TO-3 2N3742 TO-39 2 N 3439 TO-39
2N3183 TO-3 2N6246 TO-3 BF259 TO-39
2N1990 TO-5 BF257 TO-39
2N1990S TO-5 BF257 TO-39 2N3184 TO-3 2N6246 TO-3 2N3743 TO-39 2N5416 TO-39
2N2034 TO-5 2N5784 TO-39 2N3185 TO-3 2N6247 TO-3 BFT19B TO-39
2N1711 TO-39 2N3186 TO-3 2N6248 TO-3 2N3766 TO-66 2N3879 TO-66
2N2049 TO-5
2N2102 TO-39 2N3195 TO-3 2N6246 TO-3 2N6373 TO-66
2N2102S TO-5
2N3767 TO-66 2N6372 TO-66
2N2192 TO-5 2N1711 TO-39 2N3196 TO-3 2N6246 TO-3
2N2193 TO-39
2N2194 TO-39
2N2195 TO-39
2N2195A TO-39
2N5783 2N3782 TO-5 2N5783 TO-39
2N2217 TO-39 2N697 TO-39 2N3208 TO-5 TO-39
2N3224 TO-5 2N5415 TO-39 2N3788 TO-3 2 N 5840 TO-3
2N2218 TO-39 2N697 TO-39
2N3225 TO-5 2N5415 TO-39 2N3789 TO-3 2N3791 TO-3
2N2243 TO-39 2N1893 TO-39
2N3226 TO-3 2N6253 TO-3 2N3790 TO-3 2N3792 TO-3
2N2243A TO-39 2N1893 TO-39
2N2270S TO-39 2N2270 TO-39 2N3233 TO-3 2N3442 TO-3 TO-39
2N3795 TO-5 2N5415
2N2297S TO-39 2N1613 TO-39 2N6262 TO-3 2N3864 TO-3 2N3442 TO-3
2N2330 TO-39 40814 TO-39 2N3236 TO-3 2N6254 TO-3 2N3902 TO-3 2 N 6308 TO-3
2N2410 TO-39 2N3053 TO-39 2N3237 TO-3 2N5302 TO-3 BUX18C TO-3
2N2846 TO-39 2N697 TO-39 2N3245 TO-39 2N5323 TO-39 2N4004 Radial 2N3263 Radial
2N2863 TO-39 2N5321 TO-39 2N3300 TO-5 2N1711 TO-39 2N4054 TO-202 I RCP113C TO-202
2N2864 TO-39 2N3053 TO-39 2N3418 TO-39 2N5320 TO-39 2N4055 TO-202 RCP113B TO-202
2N2868 TO-39 2N3053 TO-39 2N3444 TO-39 2N5321 TO-39 2N4056 TO-202 RCP113B TO-202
2N2951 TO-39 41502 TO-39 2N3445 TO-3 2N6471 TO-3 2N4057 TO-202 RCP113B TO-202
2N2959 TO-39 2N1711 TO-39 2 N 3447 TO-3 2N6471 TO-3 2N4071 2N6306 TO-3
TO-3
2N3020 TO-39 2N1893 TO-39 2 N 3448 TO-3 2N6472 TO-3
26
TRANSISTORS (CONT'D)
Type Package Type Package Type Package Type Package Type Package Type Package
2N4111 TO-3 2N4914 TO-3 2N5192 Case 77 BD241B TO-220 2N5687 TO-39 40412 TO-39
2N4113 TO-3 2N4915 TO-3 2N5193 Case 77 BD242 TO-220 2N5732 TO-3 2N5671 TO-3
2N4130 TO-3 2N3055 TO-3 2N5194 Case 77 BD242A TO-220 2N5733 TO-63 2N3265 TO-63
2N4210 TO-63 2N3266 TO-63 2N5195 Case 77 BD242B TO-220 2N5734 TO-3 2N5671 TO-3
2N4231 TO-66 2N6374 TO-66 BUX18C TO-3 2N5738 TO-3 2N6248 TO-3
2N4234 TO-39 2N5783 TO-39 2N5280 Flange 2N4036 TO-39 FL 2N6262 TO-3
2N4235 TO-39 2N5782 TO-39 2N5281 TO-5 2N5415 TO-39 2N5759 TO-3 2 N 3442 TO-3
2N4387 TO-66 2N5956 TO-66 2N5305 TO-3 BDY29 TO-3 2N5864 TO-39 40634 TO-39
2N4388 TO-66 2N5955 TO-66 2N5331 TO-63 2N3265 TO-63 2N5865 TO-39 40634 TO-39
2N4898 2N5466 TO-3 2N6671 TO-3
TO-66 2N5956 TO-66 2N5932 TO-3 2N5671 TO-3
2N4899 2N5467 TO-3 2N6671 TO-3
TO-66 2N5955 TO-66 2N5933 TO-3 2N5672 TO-3
2N4900 2N5539 TO-63 2N3265 TO-63
TO-66 2N5954 TO-66 2N5935 TO-3 2N6032 Mod.
2N4907 TO-3 2N6246 TO-3 2N5560 TO-63 2N3265 TO-63 TO-3
2N4908 TO-3 2N6246 TO-3 2N5202 TO-66 2N5936 TO-3 2N6033 Mod.
2N5598 TO-66
2N4909 TO-3 2 N 6247 TO-3 2 N 6500 TO-66 TO-3
2N5600 TO-66
2N4910 TO-66 2N6260 TO-66 2N3879 TO-66 2N5966 TO-63 2 N 3265 TO-63
2N5602 TO-66
2N6374 TO-66 TO-66
2N5968 TO-63 2N3265 TO-63
2N5604 TO-66 2 N 6500
2N4911 TO-66 2 N 3054 TO-66 2N5970 TO-3 2N6472 TO-3
2N5606 TO-66 2N3879 TO-66
2N6373 TO-66 2N5971 TO-3 2N6472 TO-3
2N5608 TO-66 2N3879 TO-66
2N4912 TO-66 2N6261 TO-66 2 N 6500 TO-66
2N5972 TO-3 2N6472 TO-3
2N5610 TO-66
2N6372 TO-66 2N5974 Case 90 2 N 6489 TO-220
2N5612 TO-66 2 N 6500 TO-66
2N5975 Case 90 2N6490 TO-220
2N4918 Case 77 BD240 TO-220 2N5614 TO-3 2N5039 TO-3
2N5976 Case 90 2N6491 TO-220
2N4919 Case 77 BD240A TO-220 2N5616 TO-3 2N5038 TO-3
2N5977 Case 90 2N6486 TO-220
2N4920 Case 77 BD240B TO-220 2N5618 TO-3 2 N 5038 TO-3
2N5978 Case 90 2 N 6487 TO-220
2N5620 TO-3 2N6496 TO-3
2N4921 Case 77 BD239 TO-220 2N5979 Case 90 2 N 6488 TO-220
2N5622 TO-3 2N5039 TO-3
2N4922 Case 77 BD239A TO-220 2N5980 Case 90 2N6489 TO-220
2N5624 TO-3 2N5038 TO-3
2N4923 Case 77 BD239B TO-220 2N5981 Case 90 2 N 6490 TO-220
2N4926 TO-39 2N3440 TO-39 2N5626 TO-3 2N5038 TO-3 2N5982 Case 90 2N6491 TO-220
BF258 TO-39 2N5628 TO-3 2 N 6496
TO-3 2N5983 Case 90 2 N 6486 TO-220
2N4927 TO-39 2 N 3440 TO-39 2N5629 TO-3 2N4348 TO-3 2 N 5984 Case 90 2 N 6487 TO-220
BF258 TO-39 RCA8638E
TO-3 2N5985 Case 90 2 N 6488 TO-220
2N4928 TO-39 BFT28 TO-39 2N5630 TO-3 2N4348 TO-3 2N5986 Case 90 2N6489 TO-220
2N4929 TO-39 BFT28A TO-39 RCA8638D TO-3 2N5987 Case 90 2N6490 TO-220
2N4930 TO-39 2N5415 TO-39 2N5631 TO-3 RCA3773 TO-3 2N5988 Case 90 2N6491 TO-220
BFT28B TO-39 2N5632 TO-3 RCA8638E TO-3 2N5989 Case 90 2N6486 TO-220
2N4931 TO-39 2N5416 TO-39 2N5633 TO-3 RCA8638D TO-3 2N5990 Case 90 2N6487 TO-220
BFT28C TO-39 2N5634 TO-3 MJ15003 TO-3 2N5991 Case 90 2N6488 TO-220
2N5050 TO-66 2N3584 TO-66 BDY37 TO-3 2N6029 TO-3 RCA9116E TO-3
2N5051 TO-66 2N3584 TO-66 2N5655 Case 77 2N6175 TO-5P 2N6030 TO-3 RCA9116D TO-3
2N5052 TO-66 2N3584 TO-66 2N5656 Case 77 2N6176 TO-5P 2N6031 TO-3 2N6609 TO-3
2N5058 TO-39 2N3439 TO-39 2N5657 Case 77 2N6177 TO-5P 2N6034 Case 77 2N6666 TO-220
BF259 TO-39 2N5660 TO-66 2N6077 TO-66 2N6034 Case 77 2N6666 TO-220
2N5059 TO-39 2N3440 TO-39 2N5661 TO-66 2N6079 TO-66 BDX34 TO-220
BF258 TO-39 2N5664 TO-66 2N6077 TO-66 2N6035 Case 77 RCA125 TO-220
2N5091 TO-5 2N5416 TO-39 2N5665 TO-66 2N6079 TO-66 BDX34A TO-220
2N5092 TO-5 2N3439 2N5672 TO-63 2N3265 TO-63 2N6036 Case 77 RCA126 TO-220
TO-39
2N5110 TO-5 2N5783 TO-39 2N5678 TO-63 2N3265 TO-63 BDX34B TO-220
2N5157 TO-3 2 N 5840 TO-3 2N5685 TO-3 2N5578 Mod. 2N6037 Case 77 2N6386 TO-220
2N5190 Case 77 BD241 TO-220 TO-3 BDX33 TO-220
2N5191 Case 77 BD241A TO-220 2N5686 TO-3 2N5578 Mod. 2N6038 Case 77 RCA120 TO-220
TO-3 BDX33A TO-220
27
BB A
D
B

Type to Equivalent RCA Type)
(Industry
POWER TRANSISTORS (CONT'D)
RCA Industry RCA Industry RCA
Industry
Package Type Package Type Package
Type Package Type Package Type Package Type
RCA121 TO-220 2N6300 TO-66 2N6534 TO-66 2SB531 TO-3 2N6247 TO-3
2N6039 Case 77
BDX33B TO-220 2N6301 TO-66 2N6534 TO-66 2SB558 TO-3 2N6248 TO-3
2N6040 Case RCA125 TO-220 2N6302 TO-3 RCA3773 TO-3 2SB595 TO-220 2N6475 TO-220
199 BDX34A TO-220 2N6312 TO-66 2N6308 TO-3 2SB596 TO-220 2N6107 TO-220
2N6041 Case RCA126 TO-220 2N5956 TO-66 2SC481 TO-39 2N699 TO-39
199 BDX34B TO-220 2N6313 TO-66 2N5955 TO-66 2SC482 TO-39 2N1613 TO-39
2N6042 Case RCA126 TO-220 2N6314 TO-66 2N5954 TO-66 2SC485 TO-39 2N1893 TO-39
199 BDX34C TO-220 2N6338 TO-3 2N5672 TO-3 2SC504 TO-39 2N1711 TO-39
199 BDX33A TO-220 2N6359 TO-3 2N4348 TO-3 2SC558 TO-3 BUX17A TO-3
199 BDX33B TO-220 2N6406 Case 77 RCP700B TO-202 2SC779 TO-66 2N3584 TO-66
2N6045 Case 2N6531 TO-220 2N6407 Case 77 RCP700C TO-202 2SC782 TO-66 2N3585 TO-66
199 BDX33C TO-220 2N6408 Case 77 RCP701 B TO-202 2SC782A TO-66 2N3585 TO-66
2N6046 TO-63 2N3266 TO-63 2N6409 Case 77 RCP701C TO-202 2SC783 TO-66 2N3583 TO-66
2N6047 TO-63 2N3265 TO-63 2N6412 Case 77 RCP701 TO-202 2SC789 TO-220 2N6292 TO-220
2N6248 TO-63 2N3265 TO-63 2N6413 Case 77 RCP701 TO-202 2SC790 TO-220 2N6290 TO-220
2N6049 TO-66 2N5955 TO-66 2N6414 Case 77 RCP700A TO-202 2SC792 TO-3 BUX16B TO-3
2N6050 TO-3 2N6649 TO-3 2N6415 Case 77 RCP700B TO-202 2SC1173 TO-220 2N6288 TO-220
2N6051 TO-3 2N6650 TO-3 2N6415 Case 77 RCP701C TO-202 2SC1195 TO-3 BUX16 TO-3
2N6053 TO-3 2N6649 TO-3 2N6417 Case 77 RCP701 TO-202 2SC1448A TO-220 TA8863 TO-220
2N6054 TO-3 2N6650 TO-3 2N6418 Case 77 RCP700C TO-202 2SC1576 TO-3 BUX16 TO-3
2N6057 TO-3 2N6384 TO-3 2N6419 Case 77 RCP700D TO-202 2SD102 TO-66 2N6261 TO-66
2 N 6058 TO-3 2N6385 TO-3 2N6420 TO-66 2N6211 TO-66 2SD129 TO-66 2N6372 TO-66
2N6062 TO-63 2N3265 TO-63 2N6421 TO-66 2N6212 TO-66 2SD130 TO-66 2N3054 TO-66
2N6063 TO-63 2N3265 TO-63 2N6422 TO-66 2N6212 TO-66 2SD234 TO-220 RCA3054 TO-220
2N6121 TO-220 2N6290 TO-220 2N6423 TO-66 2N6212 TO-66 2SD235 TO-220 RCA3054 TO-220
2N6123 TO-220 RCA31 TO-220 2N6425 TO-66 2N6212 TO-66 2SD371 TO-3 2N6254 TO-3
BD241 TO-220 2N6436 TO-3 2N5671 TO-3 2SD404C TO-220 2N6288 TO-220
2N6126 TO-220 RCA32B TO-220 2N6461 TO-39 2N3439 TO-39 2SD427 TO-3 2N4347 TO-3
BD242B TO-220 2N6542 TO-3 2N6670 TO-3 2SD428 TO-3 2N4348 TO-3
2N6543 TO-3 2N6671 TO-3 2SD523 TO-3 2N6384 TO-3
2N6129 TO-220 2N6290 TO-220
2N6544 TO-3 2N6670 TO-3 2SD524 TO-3 2N6385 TO-3
2N6130 TO-220 2N6292 TO-220
2N6545 TO-3 2N6671 TO-3 2SD526 TO-220 2N6292 TO-220
2N6131 TO-220 2N6292 TO-220
TO-220 2N6551 TO-202 RCP701B TO-202 2SD552 TO-3 BUX17A TO-3
2N6132 TO-220 2N6109
2N6133 TO-220 2N6107 TO-220 2N6552 TO-202 RCP701C TO-202 73T2 TO-39 FL 40392 TO-39 F
2N6134 TO-220 RCA32B TO-220 2N6553 TO-202 RCP701D TO-202 74T2 TO-39 FL 40628 TO-39 F
BD242B TO-220 2N6554 TO-202 RCP700B TO-202 100T2 TO-3 2N4347 TO-3
2N6555 TO-202 RCP700C TO-202 104T2 TO-3 2N6253 TO-3
2N6226 TO-3 2N6248 TO-3
2N6556 TO-202 RCP700D TO-202 108T2 TO-3 2N5039 TO-3
2N6229 TO-3 2N6248 TO-3
TO-3 RCA9116D TO-3 2N6557 TO-202 RCP1 1 1 B TO-202 109T2 TO-3 2N6354 TO-3
2N6230
2N6231 TO-3 MJ 15004 TO-3 RCP113B TO-202 182T2A TO-3 BUX16 TO-3
2N6233 TO-66 2N3583 TO-66 2N6558 TO-202 RCP111C TO-202 182T2B TO-3 BUX16 TO-3
2N6077 TO-66
RCP113C TO-202 182T2C TO-3 BUX16 TO-3
2N6234 TO-66 2N3584 TO-66 2N6559 TO-202 RCP111D TO-202 184T2A TO-3 BUX16 TO-3
2N6077 TO-66
RCP113D TO-202 183T2B TO-3 BUX16 TO-3
2N6235 TO-66 2N3585 TO-66 2N6569 TO-3 2N3055 TO-3 183T2C TO-3 BUX16 TO-3
2N6079 TO-66 2SA489 TO-220 2N6107 TO-220 183T2A TO-3 BUX16 TO-3
2N6248 TO-63 2N3265 TO-63 2SA490 TO-220 2N6109 TO-220 184T2B TO-3 BUX16 TO-3
2N6270 TO-3 2N5671 TO-3 2SA503 TO-39 2N4314 TO-39 184T2C TO-3 BUX16 TO-3
2N6271 TO-3 2N5672 TO-3 2SA504 TO-39 2N4037 TO-39 185T2A TO-3 BUX16A TO-3
2N6272 TO-63 2N3265 TO-63 2SA512 TO-39 2N4314 TO-39 185T2B TO-3 BUX16A TO-3
2N3265 TO-63 2SA560 TO-39 2N4314 TO-39 185T2C TO-3 BUX16A TO-3
2N6273 TO-63
TO-66 2N3054 TO-66
2SA597 TO-39 2N4037 TO-39 40250
2N6294 TO-66 2N6534 TO-66
2N6295 TO-66 2N6534 TO-66 2SA814 TO-220 2N6476 TO-220 40251 TO-3 2N3055 TO-3
2N6296 TO-66 RCA8350A TO-3 2SA815 TO-220 2N6475 TO-220 40636 TO-3 2N3055 TO-3
2N6297 TO-66 RCA8350B TO-3 2SB502A TO-66 2N5954 TO-66 BC119 TO-39 2N697 TO-39
2SB503A TO-66 2N5955 TO-66 BC120 TO-39 2N697 TO-39
2N6298 TO-66 RCA8350A TO-3
TO-39
2SB530 TO-3 2N6248 TO-3 BC139 TO-39 40406
2N6299 TO-66 RCA8350B TO-3
28 ,_.
BC140 TO-39 2N5321 TO-39 BD205 Case 90 2N6486
TO-220 BD316 TO-3 2N6247 TO-3
BC141 TO-39 2N5320 TO-39 BD206 Case 90 2 N 6489
TO-220 BD317 TO-3 2N6472 TO-3
BC142 TO-39 40360 TO-39 BD207 Case 90 2 N 6487
TO-220 BD318 TO-3 2N6248 TO-3
BC143 TO-39 40595 TO-39 BD208 Case 90 2 N 6490
TO-220
BC144 BD375 TO-126 BD239 TO-220
TO-39 40594 TO-39 BD213-45 TO-3P 2N6486
TO-220
BD376 TO-126 BD240 TO-220
BC160 TO-39 2N5323 TO-39 BD2 13-60 TO-3P 2 N 6487
TO-220 BD377 TO-126 BD239A TO-220
BC161 TO-39 2N5322 TO-39 BD2 13-80 TO-3P 2 N 6489
TO-220 BD378 TO-126 BD240A TO-220
BC300 TO-39 2N1893 TO-39 BD214-45 TO-3P 2 N 6489
TO-220 BD379 TO-126 BD239B TO-220
BC301 TO-39 2N699 TO-39 BD214-60 TO-3P 2N6490
TO-220
BD380 TO-126 BD240B TO-220
BC302 TO-39 2N2270 TO-39 BD2 14-80 TO-3P 2N6491
TO-220
BD410 TO-126 RCP111D TO-202
BC303 TO-39 2N4314 TO-39 BD215 TO-66 2 N 3584
TO-66 BD515 TO-202 RCP701A TO-202
BC304 TO-39 2N4037 TO-39 BD216 TO-66 2N3585
TO-66 BD516 TO-202 RCP700A TO-202
BC310 TO-39 2N1893 TO-39 BD244A TO-220 BD244A TO-220 BD517 TO-202 RCP701B TO-202
BC311 TO-39 2N4314 TO-39 BD244B TO-220 BD244B TO-220
BD518 TO-202 RCP701C TO-202
BC323 TO-39 2N5320 TO-39 BD244C TO-220 BD244C TO-220
BD245 TO-3P 2N6486 TO-220 BD519 TO-202 RCP701C TO-202
BC324 TO-39 2N5320 TO-39 BD520 TO-202 RCP700C TO-202
BD245A TO-3P 2 N 6487 TO-220
BC429 TO-39 2N2270 TO-39 BD525 TO-202 RCP701B TO-202
BD245B TO-3P 2N6488 TO-220
BC430 TO-39 2N2270 TO-39 BD526 TO-202 RCP700B TO-202
BD246 TO-3P 2N6489 TO-220
BC440 TO-39 2N5321 TO-39
BD246A TO-3P 2 N 6490 TO-220 BD527 TO-202 RCP701C TO-202
BC441 TO-39 2N5320 TO-39
BC460 TO-39 2N5323 TO-39
BD246B TO-3P 2N6491 TO-220 BD528 TO-202 RCP700C TO-202
BC461 TO-39 2N5322 TO-39
BD253 TO-3 BUX18B TO-3 BD529 TO-202 RCP701 D TO-202
BCW44 TO-39 40360 TO-39
BD253A TO-3 BUX18C TO-3 BD530 TO-202 RCP700D TO-202
BCW45 TO-39 40362 TO-39
BD253B TO-3 BU126 TO-3 BD575 Case BD241 TO-220
BCW77-16 TO-39 2N1711 TO-39 BD253C TO-3 TA8764 TO-3 199
BD260 TO-66 2 N 3584 TO-66 BD576 Case BD242 TO-220
BCW78-16 TO-39 2N1711 TO-39 BD261 199
TO-66 2N3584 TO-66
BCW79-16 TO-39 2N4037 TO-39 BD577 Case BD241A TO-220
BD264 TO-220 RCA8203A TO-220
BCW80-16 TO-39 2N4037 TO-39 BD264A TO-220 RCA8203B TO-220 199
BCY40 TO-39 2N4037 TO-39 BD264B TO-220 BDX34C TO-220 BD578
BCY54
Case BD242A TO-220
TO-39 2N4036 TO-39
BD265 TO-220 2N6387 TO-220 199
BD115 TO-39 BF258 TO-39 BD265A BD579 Case BD241B TO-220
TO-220 2 N 6388 TO-220
BD116 TO-3 2N3055 TO-3 199
BD265B TO-220 BDX33C TO-220
BD141 TO-3 2N4347 TO-3 BD580 BD242B
BD266 TO-220 BDX34A TO-220 Case TO-220
BD266A TO-220 BDX34B TO-220 199
BD144 TO-3 BUX18C TO-3
BD581
BD148 BD266B TO-220 BDX34C TO-220 Case BD242C TO-220
TO-66 BDY71 TO-66
BD267 TO-220 BDX33A TO-220 199
BD149 TO-66 BDY71 TO-66
BD267A TO-220 BDX33B TO-220 BD582 Case BD242C TO-220
BD160 TO-3 2N6510 TO-3
BD162 TO-66 40250 TO-66 BD267B TO-220 BDX33C TO-220 199
BD268 TO-220 BDX34A TO-220 BD585 Case BD241 TO-220
BD163 TO-66 2N6260 TO-66
BD268A TO-220 BDX34B TO-220 199
BD185 TO- 126 BD239 TO-220
BD269 TO-220 BDX33A TO-220 BD586 Case BD242 TO-220
BD186 TO- 126 BD240 TO-220 199
BD187 TO- 126 BD239 TO-220
BD269A TO-220 BDX33B TO-220
BD271 TO-220 BD241 TO-220 BD587 Case BD241A TO-220
BD188 TO-126 BD240 TO-220
BD189 TO- 126 BD239A TO-220
BD272 TO-220 BD242 TO-220 199
BD190 TO-126 BD240A TO-220 BD273 TO-220 BD241A TO-220 BD588 Case BD242A TO-220
BD274 TO-220 BD242A TO-220 199
BD191 TO-66 2 N 3054 TO-66 BD589 Case BD241B
BD275 TO-220 BD241B TO-220 TO-220
BD192 TO-66 2N6260 TO-66 199
BD276 TO-220 BD242B TO-220
BD195 Case 90 BD243 TO-220
BD291 SOT-82 BD243 TO-220 BD590 Case BD242B TO-220
BD196 Case 90 BD244 TO-220
199
BD197 Case 90 BD243A TO-220 BD292 SOT-82 BD244 TO-220 BD591 Case BD241C TO-220
BD198 Case 90 BD244A TO-220 BD293 SOT-82 BD243A TO-220
199
BD199 Case 90 CD243B TO-220 BD294 SOT-82 BD244A TO-220 BD592 Case BD242C TO-220
BD200 Case 90 BD244B TO-220 BD301 TO-220 BD243 TO-220
199
BD201 Case BD243 TO-220 BD302 TO-220 BD244 TO-220
BD595 Case BD243 TO-220
199 BD303 TO-220 BD243A TO-220 199
BD202 Case BD244 TO-220 BD304 TO-220 BD244A TO-220 BD596 Case BD244 TO-220
199 BD311 TO-3 2N6471 TO-3 199
BD203 Case BD243A TO-220 BD312 TO-3 2N6246 TO-3 BD597 Case BD243A TO-220
199 BD313 TO-3 2N6472 TO-3 199
BD204 Case BD244A TO-220 BD314 TO-3 2N6247 TO-3 BD598 Case BD244A TO-220
199 BD315 TO-3 2N6472 TO-3 199
29
Package Type Package Type Package Type Package
Type Package Type Package Type
BD599 Case BD243B TO-220 BD701 Case BDX33C TO-220 BDY73 TO-3 2N3055 TO-3
199 199 BDY74 TO-3 2N4347 TO-3
BD600 BD702 Case BDX34C TO-220 BDY76 TO-3 2N3772 TO-3
Case BD244B TO-220
199 199 BDY77 TO-3 2N3773 TO-3
BD601 Case BD243C TO-220 BDY78 TO-66 2N6373 TO-66
BD705 TO-220 2N6486 TO-220 BDY79 TO-66 2N3583 TO-66
199
BD706 TO-220 2N6489 TO-220 BDY80A TO-220 2N5296 TO-220
BD602 Case BD244C TO-220
199
BD605 Case 2N6486 TO-220
199
BD710 TO-220 2N6491 TO-220 BDY91 TO-3 2 N 5038 TO-3
BD606 Case 2N6489 TO-220
2N3054 TO-66
BDX14 TO-66 BDY92 TO-3 2N5039 TO-3
199
BDX16 TO-66 BUX66 TO-66 BDY93 TO-3 BU126 TO-3
BD607 Case 2N6487 TO-220
BDX27 TO-66 2N3879 TO-66 BDY94 TO-3 BU126 TO-3
199
BDX28 TO-66 2N3879 TO-66 BDY95 TO-3 BU126 TO-3
BD608 Case 2N6490 TO-220
199 BDX30 TO-66 2N6500 TO-66 BDY96 TO-3 2N6513 TO-3
BDX53 TO-220 BDX33 TO-220 BDY97 TO-3 2N6512 TO-3
BD609 Case 2N6488 TO-220
199 BDX53A TO-220 BDX33A TO-220 BDY98 TO-3 2N6511 TO-3
2N6491 TO-220 BDX53B TO-220 BDX33B TO-220 BDY99 TO-3 2N6511 TO-3
BD610 Case
199 BDX53C TO-220 BDX33C TO-220 BF111 TO-39 2N3440 TO-39
BD633 TO-220 40979 TO-220 BDX54 TO-220 BDX34 TO-220 NF137 TO-5 BF257 TO-39
BD634 TO-220 40980 TO-220 BDX54A TO-220 BDX34A TO-220 BF157 TO-39 BF257 TO-39
BD635 TO-220 40871 TO-220 BDX54B TO-220 BDX34B TO-220 BF174 TO-39 BF257 TO-39
BD636 TO-220 40872 TO-220 BDX54C TO-220 BDX34C TO-220 BF177 TO-39 40360 TO-39
BD637 TO-220 40871 TO-220 BDX60 TO-3 2N6254 TO-3 BF178 TO-39 40412 TO-39
BD638 TO-220 40872 TO-220 BDX61 TO-3 2N3055 TO-3 BF179 TO-39 BF257 TO-39
BD643 TO-220 BDX33 TO-220 BDX62 TO-3 RCA8350A TO-3 BF179A TO-39 BF257 TO-39
BD644 TO-220 BDX34 TO-220 BDX62A TO-3 RCA8350B TO-3 BF179B TO-39 BF258 TO-39
BD645 TO-220 BDX33A TO-220 BDX63 TO-3 2N6384 TO-3 BF179C TO-39 BF258 TO-39
BD646 TO-220 BDX34A TO-220 BDX63A TO-3 2 N 6385 TO-3 BF305 TO-39 BF257 TO-39
BD647 TO-220 BDX33B TO-220 BDX64 TO-3 BDX84A TO-3 BF322 TO-39 40317 TO-39
BD648 TO-220 BDX34B TO-220 BDX64A TO-3 BDX84B TO-3 BF323 TO-39 40319 TO-39
BD661 TO-220 2 N 6486 TO-220 BDX64B TO-3 BDX84C TO-3 BF336 TO-39 BF258 TO-39
BD662 TO-220 2N6489 TO-220 BDX65 TO-3 BDX83A TO-3 BF337 TO-39 BF258 TO-39
BD663 TO-220 2N6486 TO-220 BDX65A TO-3 BDX83B TO-3 BF338 TO-39 BF258 TO-39
BD663B TO-220 2 N 6486 TO-220 BDX65B TO-3 BDX83C TO-3 BF355 TO-39 2N3440 TO-39
BD664 TO-220 2 N 6489 TO-220 BDX77 TO-220 BD243B TO-220 BF380 TO-202 RCP113A TO-202
BD695 Case BDX33 TO-220 BDX78 TO-220 BD244B TO-220 BF381 TO-202 RCP113B TO-202
199 BDY10 TO-3 2N6253 TO-3 BF382 TO-202 RCP113C TO-202
BDY12 TO-3 BUX16 TO-3 BF390 TO-39 BF259 TO-39
BD695A Case BDX33 TO-220 BUX16 TO-3 BFR19 2N1613 TO-39
BDY13 TO-3 TO-39
199 BUX16 TO-3 2N1711 TO-39
BDY15 TO-3 BFR20 TO-39
BD696 Case BDX34 TO-220 BDY17 TO-3 BUX16 TO-3 BFR21 TO-39 2N1893 TO-39
199 BDY20 TO-3 BUX16 TO-3
BD696A BDX34 TO-220 BFR22 TO-39 2N2102 TO-39
Case BDY25A TO-3 BUX16 TO-3
199 BFR23 TO-39 2N4036 TO-39
BDY25B TO-3 BUX16 TO-3
BFR24 TO-39 2N4037 TO-39
BD697 Case BDX33A TO-220
BDY25C TO-3 BUX16 TO-3
199 BFR56 TO-39 2N5321 TO-39
BDY26A TO-3 BUX16 TO-3
BFR57 TO-39 BF257 TO-39
BD697A Case BDX33A TO-220 BDY26B TO-3 BUX16 TO-3
199 BUX16 TO-3 BFR58 TO-39 BF258 TO-39
BDY26C TO-3
BD698 Case BDX34A TO-220 BFR59 TO-39 BF259 TO-39
BDY27A TO-3 BUX16 TO-3
BFR77 TO-39 2N1893 TO-39
199 BUX16 TO-3
BDY27B TO-3 BFR78 TO-39 2N2405 TO-39
BD698A Case BDX34A TO-220
BDY27C TO-3 BUX16 TO-3
199 BFS90 TO-39 40987 TO-39
BDY28A TO-3 BUX16A TO-3
BD699 BDX33B TO-220 BFS90A TO-39 40987 TO-39
Case BDY28B TO-3 BUX16A TO-3
TO-39
199 BFS91 TO-39 40999
BDY28C TO-3 BUX16A TO-3 BFS91A TO-39 40999 TO-39
BD699A Case BDX33B TO-220
2N6253 TO-3
BDY38 TO-3 BFS92 TO-39 2N4036 TO-39
199 TO-3
BDY39 TO-3 2N3055 BFS93 TO-39 2N4314 TO-39
BD700 Case BDX34B TO-220
2N5039 TO-3
199
BDY55 TO-3
BDY56 TO-3 2N5038 TO-3 BFS94 TO-39 2N4037 TO-39
BD700A Case BDX34B TO-220
41012 TO-3 BFS95 TO-39 2N4037 TO-39
199
BDY57 TO-3
TO-39
41013 TO-3 BFT32 TO-39 40635
BDY58 TO-3
30
1 B

Type Packag i Type Package Type Package Type Package Type Package Type Package
BFT33 TO-39 40409 TO-39 HR BSS45 TO-39 2N5320 TO-39 BUX39 TO-3 2N5038 TO-3
BFT34 TO-39 2N2405 TO-39 BSS46 TO-39 2N5322 TO-39 BUX40 TO-3 2N6354 TO-3
BFT35 TO-39 2N4314 TO-39 BSS48 TO-39 2 N 3440 TO-39 BUX41 TO-3 BUX17A TO-3
BFT36 TO-39 40410 TO-39HR BSS49 TO-39 2N3439 TO-39 BUX42
BSV15
TO-3 BUX17B TO-3
BFT39 TO-39 40409 TO-39 HR TO-39 2N4037 TO-39 BUX43 TO-3 BUX17C TO-3
BFT40 TO-39 40628 TO-39 HR BSV15-6 TO-39 2N4037 TO-39 BUX44 TO-3 BUX18C TO-3
BFT41 TO-39 40628 TO-39 HR BSV15-1C TO-39 2N4037 TO-39 BUX84 TO-220 TA8863A TO-220
BFT44 TO-39 BF259 TO-39 BSV16 TO-39 2N4314 TO-39 BUY35 TO-3 2N6511 TO-3
BFT45 TO-39 BF258 TO-39 BSV16-6 TO-39 2N4314 TO-39 BUY43 TO-66 BDY71 TO-66
BFT60 TO-39 2N4037 TO-39 BSV16-10 TO-39 2N4314 TO-39 BUY46 TO-66 2N3054 TO-66
BFT61 TO-39 2N4037 TO-39 BSV17 TO-39 2N5322 TO-39 BUY55 TO-3 2N5239 TO-3
BFT62 TO-39 40815 TO-39 BSV69 TO-39 2N5321 TO-39 BUY56 TO-3 2N5239 TO-3
BFT80 TO-39 40815 TO-39 BSV77 TO-39 2N5321 TO-39 BUY66 TO-3 BU126 TO-3
BFW24 TO-39 2N2102 TO-39 BSV84 TO-39 2N1893 TO-39 BUY67 TO-3 BU126 TO-3
BFW25 TO-39 2N1711 TO-39 BSW23 TO-39 2N4037 TO-39 BUY69B TO-3 BU126 TO-3
BFW26 TO-39 2N697 TO-39 BSW39 TO-39 2N1893 TO-39 BUY69C TO-3 BU126 TO-3
BFW33 TO-39 2N1893 TO-39 BSX22 TO-39 2N5321 TO-39 BUY70B TO-3 BU126 TO-3
BFW44 TO-39 BFT19 TO-39 BSX23 TO-39 2N5320 TO-39 BUY70C TO-3 BU126 TO-3
BFW45 TO-39 BF257 TO-39 BSX40 TO-39 2N4037 TO-39
BFX17 TO-39 2N3053 BSX45 TO-39 2N3053 TO-39 BUY72 TO-3 2N5239 TO-3
TO-39
BFX29 BUY74 TO-3 BUX18A TO-3
TO-39 2N4036 TO-39 BSX46 TO-39 2N2102 TO-39
BFX30 TO-39 2N4036
BUY75 TO-3 BUX18C TO-3
TO-39 BSX47 TO-39 2N1893 TO-39 BUY76 TO-3 BU126 TO-3
BFX39 TO-39 2N4036 TO-39 BSX59 TO-39 2N5321 TO-39 BUY77 TO-3 BUX18A TO-3
BFX68 TO-39 2N1711 TO-39 BSX60 TO-39 2N5321 TO-39
BFX68A TO-39 2IM1711 TO-39 BSX61 TO-39 2N5321 TO-39 BUY78 TO-3 BUX18C TO-3
BFX69 TO-39 2N697 TO-39 BSX72 TO-39 2N3053 TO-39 BUY79 TO-3 BUX126 TO-3
BFX69A TO-39 2N1613 TO-39 BSX95 TO-39 2N1613 TO-39 D40D1 TO-202 RCP707 TO-202
BFX74 TO-39 2N4037 TO-39 BSX96 TO-39 2N1711 TO-39 D40D2 TO-202 RCP707 TO-202
BFX74A TO-39 2N4314 TO-39 BSY25 TO-39 2N697 TO-39 D40D3 TO-202 RCP707 TO-202
BFX85 TO-39 2N2405 TO-39 BSY44 TO-39 2N699 TO-39 D40D4 TO-202 RCP707 TO-202
BFX87 TO-39 2N4036 TO-39 BSY46 TO-39 2N699 TO-39 D40D6 TO-202 RCP701 B TO-202
BFX91 TO-39 BFT28B TO-39 D40D8 TO-202 RCP701B TO-202
BFX98 TO-39 BF257 TO-39 BSY52 TO-39 2N1711 TO-39 D40D10 TO-202 RCP701C TO-202
BFY10 TO-39 40814 TO-39 BSY53 TO-39 2N697 TO-39 D40D1 TO-202 RCP701C TO-202
BFY11 TO-39 40814 TO-39 BSY54 TO-39 2IM1711 TO-39 D40D13 TO-202 RCP701C TO-202
BFY17 TO-39 40317 TO-39 BSY55 TO-39 2N1893 TO-39 D40E1 TO-202 RCP705 TO-202
BFY33 TO-39 2N697 TO-39 BSY68 TO-39 2N2405 TO-39 D40E5 TO-202 RCP701B TO-202
BFY34 TO-39 2N697 TO-39 BSY71 TO-39 2N1711 TO-39
BFY40 TO-39 40320 TO-39 BSY81 TO-39 2N697 TO-39
D40E7 TO-202 RCP701C TO-202
BFY43 TO-39 BF257 TO-39 BSY82 TO-39 2N1711 TO-39
D40N1 TO-202 RCP113B TO-202
BFY44 BSY83 TO-39 2N697 TO-39
D40N2 TO-202 RCP111B TO-202
TO-39 2N2102 TO-39
BSY84 TO-39 2N1711
D40N3 TO-202 RCP113C TO-202
BFY45 TO-39 40408 TO-39 TO-39
BSY85 TO-39 2N1893 D40N4 TO-202 RCP111C TO-202
BFY46 TO-39 2N1711 TO-39 TO-39
BFY50 TO-39 2N697 TO-39 BSY87 TO-39 2N2102
D40N5 TO-202 RCP111C TO-202
TO-39
BFY51 TO-39 2N697 TO-39 BSY91 D40P1 TO-202 2N6175 TO-5P
TO-39 2N697 TO-39
BFY52 TO-39 2N3053 TO-39 BSY92 TO-39 2N1711 TO-39 D40P3 TO-202 2N6175 TO-5P
BFY55 TO-39 2N697 TO-39 BU102 TO-3 BUX18B TO-3 D40P5 TO-202 2N6175 TO-5P
BFY56 TO-39 2N699 TO-39 BU111 TO-3 2N6512 TO-3
D41D1 TO-202 RCP706 TO-202
BFY57 TO-39 BF257 TO-39 BU114 TO-3 2N6510 TO-3 D41D2 TO-202 RCP706B TO-202
BFY67 TO-39 2N3053 TO-39 BU121 TO-3 BUX18 TO-3 D41D4 TO-202 RCP706B TO-202
BFY67A TO-39 2N1613 TO-39 BU129 TO-3 BUX18C TO-3
BFY68 TO-39 2N1711 TO-39 BU134 TO-3 BU126 TO-3 D41D5 TO-202 RCP700B TO-202
BFY70 TO-39 2N3053 TO-39 BU135 TO-3 2N6510 TO-3 D41D6 TO-202 RCP700B TO-202
BFY94 TO-39 40594 TO-39 BU136 TO-3 2N6510 TO-3 D41D7 TO-202 RCP700B TO-202
BSS15 TO-39 2N5320 TO-39 BU310 TO-3 BUX17 TO-3 D41D8 TO-202 RCP700B TO-202
BSS16 TO-39 2N5321 TO-39 BU311 TO-3 BUX17 TO-3 D41D10 TO-202 RCP700C TO-202
BSS17 TO-39 2N5322 TO-39 BU312 TO-3 BUX17 TO-3 D41D11 TO-202 RCP700C TO-202
BSS18 TO-39 2N5323 TO-39 BU409 TO-220 TA8863J TO-220 D41D13 TO-202 RCP700C TO-202
BSS30 TO-39 2N2102 TO-39 BUX26 TO-3 2N6510 TO-3 D41E1 TO-202 RCP704 TO-202
BSS32 TO-39 2N2405 TO-33 BUX27 TO-3 BUX18C TO-3 D41E5 TO-202 RCP700B TO-202
31
RCA Industry RCA
Industry RCA Industry
Package Type Package
Package Type Package Type Package Type
Type Package Type
D44C9 TO-220 2 N 6292 TO-220 DTS423 TO-3 RCA423 TO-3
D41E7 TO-202 RCP700C TO-202
TO-3
BD239A TO-220 DTS431 TO-3 RCA431
D42C1 TO-202 2N6288 TO-220 2 N 6384 TO-3
TO-220 2N6292 TO-220 ESM113 TO-3
RCP707 TO-202 D44C10 2N6385 TO-3
BD239B TO-220 ESM114 TO-3
D42C2 TO-202 2N6288 TO-220 RCA8350A TO-3
D44C1 TO-220 2N6292 TO-220 ESM159 TO-3
RCP705 TO-202 1
TO-3
BD239B TO-220 ESM160 TO-3 RCA8350B
D42C3 TO-202 2N6288 TO-220
TO-220
D44C12 TO-220 BD239B TO-220 ESM213 TO-220 2N6387
RCP705 TO-202
TO-220
2N6386 TO-220 ESM214 TO-220 2N6388
D42C4 TO-202 2 N 6290 TO-220 D44E1 TO-220 TO-220
ESM217 TO-220 2 N 6387
RCP703A TO-202 D44E2 TO-220 2N6387 TO-220
ESM218 TO-220 2N6388 TO-220
TO-220 D44E3 TO-220 2N6388 TO-220
D42C5 TO-202 2 N 6290 RCA8203A TO-220
RCP701A TO-202 D44H1 TO-220 2N6288 TO-220 ESM259 TO-220
TO-220 2N6288 TO-220 ESM260 TO-220 RCA8203B TO-220
D42C6 TO-202 2 N 6290 TO-220 D44H2
ESM261 TO-220 RCA8203A TO-220
RCP701A TO-202 D44H4 TO-220 2N6290 TO-220
ESM262 TO-220 RCA8203B TO-220
TO-202 2N6292 TO-220 D44H5 TO-220 2N6290 TO-220
D42C7 FT410 TO-3 RCA410 TO-3
RCP703B TO-202
TO-220 2N6292 TO-220
D44H7 FT411 TO-3 RCA411 TO-3
D42C8 TO-202 2N6292 TO-220 D44H8 TO-220 2N6292 TO-220
FT413 TO-3 RCA413 TO-3
RCP701B TO-202 D44H10 TO-220 2N6292 TO-220
FT423 TO-3 RCA423 TO-3
D42C9 TO-202 2N6292 TO-220 2N6292 TO-220
D44H11 TO-220 FT431 TO-3 RCA431 TO-3
RCP701B TO-202
TO-220 TA8863B TO-220
D44R1 MJ400 TO-66 2N3585 TO-66
D42C10 TO-202 2N6292 TO-220 D44R2 TO-220 TA8863B TO-220
MJ410 TO-3 RCA410 TO-3
RCP703C TO-202 D44R3 TO-220 TA8863B TO-220
D42C1 TO-202 2N6292 TO-220 D44R4 TO-220 TA8863B TO-220
RCP701C TO-202
D44R5 TO-220 TA8863F TO-220
MJ420 TO- 39 BF258 TO-39
D42C12 TO-202 RCP701C TO-202
D44R6 TO-220 TA8863F TO-220
D43C1 TO-202 2N6111 TO-220 D45C1 TO-220 2N6111 TO-220
RCP706 TO-202 BD240 TO-220 MJ424 TO-3 BUX16C TO-3
D43C2 TO-202 2N6111 TO-220 TO-220 MJ425 TO-3 BUX18C TO-3
D45C2 TO-220 2N6111
RCP704 TO-202 MJ431 TO-3 RCA431 TO-3
BD240 TO-220
TO-220 MJ450 TO-3 2N6246 TO-3
D43C3 TO-202 2N6111 D45C3 TO-220 2N6111 TO-220
RCP704 TO-202 2N6469 TO-3
BD240 TO-220
TO-220 MJ480 TO-3 2N6470 TO-3
D43C4 TO-202 2N6109 D45C4 TO-220 2N6109 TO-220
RCP702A TO-202 MJ481 TO-3 2N6471 TO-3
BD240 TO-220
TO-220 MJ490 TO-3 2N6246 TO-3
D43C5 TO-202 2N6109 D45C5 TO-220 2N6109 TO-220
RCP700A TO-202 2 N 6469 TO-3
BD240 TO-220
TO-220 MJ491 TO-3 2N6246 TO-3
D43C6 TO-202 2N6109 D45C6 TO-220 2N6109 TO-220
RCP700A TO-202 MJ802 TO-3 RCS258 TO-3
BD240 TO-220
TO-202 2N6107 TO-220 TO-220 MJ900 TO-3 RCA8350A TO-3
D43C7 D45C7 TO-220 2N6107
RCP702B TO-202 MJ901 TO-3 RCA8350B TO-3
BD240A TO-220
TO-202 2N6107 TO-220 TO-220 MJ920 TO-3 RCA8350A TO-3
D43C8 D45C8 TO-220 2N6107 RCA8350B TO-3
RCP700B TO-202 MJ921 TO-3
BD240A TO-220
TO-202 2N6107 TO-220 MJ1000 TO-3 RCA1000 TO-3
D43C9 D45C9 TO-220 2N6107 TO-220
RCP700B TO-202 MJ1001 TO-3 RCA1001 TO-3
BD240A TO-220
TO-3
TO-220 MJ1200 TO-3 2N6384
D43C10 TO-202 2N6107 D45C10 TO-220 2N6107 TO-220 TO-3
MJ1201 TO-3 2 N 6385
RCP700B TO-202 BD240B TO-220
MJ1800 TO-3 2N5838 TO-3
D43C11 TO-202 2N6107 TO-220 D45C11 TO-220 2N6107 TO-220
BUX16C TO-3
RCP705C TO-202 BD240B TO-220
TO-202 RCP700C TO-202 MJ2249 TO-66 2N3879 TO-66
D43C12 D45C12 TO-220 BD240B TO-220
MJ2250 TO-66 2N3879 TO-66
D44C1 TO-220 2N6288 TO-220 D45E1 TO-220 2N6666 TO-220
MJ2251 TO-66 2N3584 TO-66
BD239 TO-220 D45E2 TO-220 2N6667 TO-220
TO-220
BUX67B
D44C2 TO-220 2N6288 D45E3 TO-220 2N6668 TO-220 TO-66
TO-220 MJ2252 TO-66 2N3585
BD239 D45H1 TO-220 2N6111 TO-220
TO-220
BUX67C TO-66
D44C3 TO-220 2N6288 D45H2 TO-220 2N6111 TO-220
BD239 TO-220 MJ2253 TO-66 2N5955 TO-66
D45H4 TO-220 2N6109 TO-220 MJ2254 TO-66 2N5954 TO-66
D44C4 TO-220 2 N 6290 TO-220 TO-220
D45H5 TO-220 2N6109 MJ2267 TO-3 2N6246 TO-3
BD239 TO-220 TO-220
D45H7 TO-220 2N6107 2N6469 TO-3
D44C5 TO-220 2N6290 TO-220 TO-220
D45H8 TO-220 2N6107 MJ2268 TO-3 2N6246 TO-3
BD239 TO-220
TO-220 D45H10 TO-220 2N6107 TO-220 MJ2500 TO-3 2 N 6649 TO-204MA*
D44C6 TO-220 2N6290
BD239 TO-220 D45H11 TO-220 2N6107 TO-220 RCA8350A TO-3
TO-220 DTS410 TO-3 RCA410 TO-3 MJ2501 TO-3 2N6650 TO-204MA'
D44C7 TO-220 2N6292 TO-3
DTS411 TO-3 RCA411 RCA8350B TO-3
BD239A TO-220
TO-220 DTS413 TO-3 RCA413 TO-3 MJ2801 TO-3 2N6371 TO-3
D44C8 TO-220 2N6292
BD239A TO-220
32
JEDEC TO-204MA was formerly designated JEDEC TO-3.
1 1

MJ2840 TO-3 2N3055 TO-3 MJE29B Case BD239B TO-220 MJE105 Case 90 BD278A TO-220
2N6471 TO-3 199 MJE105K Case BD278A TO-220
MJ2841 TO-3 2N6254 TO-3 MJE29C Case BD239C TO-220 199
2N6472 TO-3 199 MJE205 Case 90 2N6290 TO-220
MJ2901 TO-3 2N6246 TO-3 MJE30 Case BD240 TO-220 BD277 TO-220
2N6249 TO-3 199 MJE205K Case BD277 TO-220
MJ2940 TO-3 2N6246 TO-3 MJE30A Case BD240A TO-220 199
BDX18N TO-3 199 MJE340K Case TA8863B TO-220
MJ2941 TO-3 2N6247 TO-3 MJE30B Case BD240B TO-220 199
MJ3000 TO-3 2N6384 TO-3 199 MJE341K Case TA8863J TO-220
MJ3001 TO-3 2N6385 TO-3 MJE30C BD240C 199
Case TO-220
MJ3010 TO-3 BUX16B TO-3 199 MJE344K Case TA8865J TO-220
MJ301 TO-3 BUX16B TO-3 MJE31 Case BD241 TO-220 199
MJ3026 TO-3 2N5839 TO-3 199 MJE370 Case 77 RCA30 TO-220
MJ3027 TO-3 2N5840 TO-3 MJE31A BD241A MJE370K Case BD242 TO-220
Case TO-220
BUX126 TO-3 199 199
MJ3028 TO-3 2N5840 TO-3
MJE31B Case BD241B TO-220 MJE371 Case 77 RCA30 TO-220
BUX126 TO-3
MJE520 Case 77 RCA29 TO-220
MJ3029 TO-3 BUX16A TO-3 199
MJE31C Case BD241C TO-220 MJE520K Case BD241 TO-220
MJ3030 TO-3 BUX16C TO-3
199
MJ3101 TO-66 2N3878 TO-66 199
BD242 TO-220
MJE521 Case 77 RCA29 TO-220
MJ3201 TO-66 BUX67A TO-66 MJE32 Case
199 MJE700 TO-126 RCA125 TO-220
MJ3202 TO-66 2N3585 TO-3
MJE32A Case BD242A TO-220 2N6667 TO-220
BUX67B TO-66
MJE701 TO- 126 RCA125 TO-220
MJ3430 TO-3 2N5840 TO-3 199
MJE32B Case BD242B TO-220 2N6667 TO-220
BUX18B TO-3
MJE702 TO-126 RCA126 TO-220
199
MJ3583 TO-66 2N6211 TO-3 2N6668 TO-220
MJ3584 TO-66 2N6212 TO-66 MJE32C Case BD242C TO-220
199 MJE703 TO-126 RCA126 TO-220
MJ3585 TO-66 2N6212 TO-66
MJE33 Case 2N6486 TO-220 2N6668 TO-220
MJ3701 TO-66 2N5956 TO-66
199 MJE800 TO-126 2N6387 TO-220
MJ3760 TO-3 BU126 TO-3
RCA120 TO-220
MJE33A Case 2N6487 TO-220
MJ3761 TO-3 BU126 TO-3
199 MJE801 TO-126 2N6387 TO-220
MJ3771 TO-3 2N3771 TO-3 RCA120 TO-220
TO-3 MJE33B Case 2N6488 TO-220
MJ3772 TO-3 2N3772
199 MJE802 TO-126 2N6388 TO-220
MJ3773 TO-3 2N3773 TO-3
MJE34 Case 2N6489 TO-220 RCA121 TO-220
MJ4000 TO-3 2N6384 TO-3
199 MJE803 TO-126 2N6388 TO-220
RCA1000 TO-3
MJE34A Case 2N6490 TO-220 RCA121 TO-220
MJ4001 TO-3 2N6385 TO-3 199 MJE1090 Case 90 2N6667 TO-220
RCA1001 TO-3
MJE34B Case 2N6491 TO-220 BDX34A TO-220
MJ4010 TO-3 2N6649 TO-204MA* 199 MJE1091 Case 90 2N6667 TO-220
2N6667 TO-3 BD243 TO-220 BDX34A TO-220
MJE41 Case
MJ4011 TO-3 2N6650 TO-204MA* 199 MJE1092 Case 90 2N6667 TO-220
2N6668 TO-3
MJE41A Case BD243A TO-220 BDX34B TO-220
MJ4502 TO-3 2N6248 TO-3 TO-220
BDX34B TO-220
MJE41B Case BD243B
MJ5415 TO-39 2N5415 TO-39
199 MJE1100 Case 90 2N6387 TO-220
MJ5416 TO-39 2N5416 TO-39 BD243C TO-220 BDX33A TO-220
MJE41C Case
MJ5600 TO-3 2N3772 TO-3
199 MJE1101 Case 90 2N6387 TO-220
MJ5601 TO-3 2N6258 TO-3 MJE42 Case BD244 TO-220 BDX33A TO-220
MJ5603 TO-3 2N3773 TO-3 BD244A TO-220
BDX33B TO-220
MJE42A Case
MJ6000 TO-3 2N3772 TO-3
199 MJE1103 Case 90 2N6388 TO-220
MJ6001 TO-3 2N6258 TO-3 BD244C TO-220 BDX33B TO-220
MJE42B Case
MJ6003 TO-3 2N6258 TO-3 MJE42C Case BD244C TO-220 MJE1291 Case 90 2N6490 TO-220
MJ6302 TO-3 2N3773 TO-3
MJE47 Case TA8863C TO-220 MJE1661 Case 90 2N6487 TO-220
MJ7000 TO-63 2N3265 TO-63 199 MJE2010 Case BD244 TO-220
MJE29 Case BD239 TO-220 MJE48 Case TA8863B TO-220 199
199 199 MJE201 Case BD244A TO-220
MJE29A Case BD239A TO-220 MJE49 Case TA8863A TO-220 199
199 199 MJE2020 Case BD243 TO-220
199
33
D
B

(Industry to Equivalent RCA
Type Type)
MJE2021 Case BD243A TO-220 MJE3055 Case 90 RCA3055 TO-220 MJE6044 Case 90 2N6530 TO-220
199 MJE3055K Case RCA3055 TO-220 BDX33B TO-220
MJE2050 Case 40979 TO-220 199 MJE6045 Case 90 RCA122 TO-220
199 RCA1C10 TO-220 MJE3370 Case BD242 TO-220 BDX33C TO-220
MJE2090 Case RCA8203A TO-220 199 MM 3005 TO-39 40635 TO-39
199 BDX34A TO-220 MJE3371 Case 90 40980 TO-220 RCA1 A06 TO-39
MJE2091 Case RCA8203A TO-220 RCA1C11 TO-220 MM4000 TO-39 BFT28 TO-39
199 BDX34A TO-220 MJE3439 TO- 126 RCP111D TO-220 MM4001 TO-39 BFT28A TO-39
MJE2092 Case RCA8203B TO-220 MJE3740 Case 2N6107 TO-220 MM4002 TO-39 BFT28B TO-39
199 BDX34B TO-220 199 MM4003 TO-39 BFT28C TO-39
MJE2093 Case RCA8203B TO-220 MJE3741 Case 2N6107 TO-220 MM5005 TO-39 40634 TO-39
199 BDX34B TO-220 199 RCA1 A05 TO-39
MJE2100 Case 2 N 6387 TO-220 MJE4918 Case BD240 TO-220 MPSU01 Case RCP705 TO-202
199 BDX33A TO-220 199 152
MJE2101 Case 2N6387 TO-220 MPSU02 Case RCP701B TO-202
MJE4919 Case BD240A TO-220
199 BDX33A TO-220
199 152
MJE2102 Case 2N6388 TO-220 BD240B TO-220 MPSU05 Case RCP701 B TO-202
MJE4920 Case
199 BDX33B TO-220 152
199
MJE2103 Case 2 N 6388 TO-220 MJE4921 Case BD239 TO-220 MPSU06 Case RCP701C TO-202
199 BDX33B TO-220 199 152
MJE2160 Case 90 TA8863B TO-220 MJE4922 Case BD239A TO-220 MPSU07 Case RCP701D TO-202
MJE2360 Case TA8863E TO-220 199 152
199 MJE4923 Case BD239B TO-220 MPSU10 Case RCP111D TO-202
MJE2361 Case TA8863A TO-220 152
199
199 MJE5655 Case TA8863J TO-220 MPSU51 Case RCP704 TO-202
MJE2370 Case 2N6109 TO-220 199 152
199 BD240 TO-220 MJE5656 Case TA8863F TO-220 MPSU52 Case RCP700A TO-202
199 152
MJE2371 Case 2N6107 TO-220
199 BD240A TO-220 TA8863E TO-220 MPSU55 Case RCP700B TO-202
MJE5657 Case
152
MJE2480 Case 2 N 6290 TO-220 199
199 BD243 TO-220 MJE5974 Case 2N6489 TO-220 MPSU56 Case RCP700C TO-202
MJE2481 Case 2N6292 TO-220 199 152
199 BD243A TO-220 MJE5975 Case 2N6490 TO-220 MPSU57 Case RCP700D TO-202
MJE2482 Case 2 N 6290 TO-220 199 152
199 BD243 TO-220 2N6491 TO-220 NSD102 TO-202 RCP701 TO-202
MJE5976 Case
MJE2483 Case 2N6292 TO-220 199 NSD103 TO-202 RCP701B TO-202
199 BD243A TO-220 MJE5977 Case 2N6486 TO-220 NSD104 TO-202 RCP701C TO-202
MJE2490 Case 2N6109 TO-220 199 NSD105 TO-202 RCP701C TO-202
199 BD244 TO-220 MJE5978 Case 2N6487 TO-220 NSD106 TO-202 RCP701 TO-202
199 BD244A TO-220 MJE5979 Case 2N6488 TO-220 NSD132 TO-202 RCP111B TO-202
MJE2520 Case 2 N 6290 TO-220 199 NSD133 TO-202 RCP113C TO-202
199 BD239 TO-220 MJE5980 Case 2N6489 TO-220 NSD134 TO-202 RCP111C TO-202
MJE2521 Case 2N6292 TO-220 199 NSD135 TO-202 RCP111D TO-202
199 BD239A TO-220 MJE5981 Case 2N6490 TO-220 NSD202 TO-202 RCP700B TO-202
199 BD241 TO-220 MJE5982 Case 2N6491 TO-220 NSD204 TO-202 RCP700C TO-202
MJE2523 Case 2N6292 TO-220 199 NSD205 TO-202 RCP700C TO-202
199 BD241A TO-220 MJE5983 Case 2N6486 TO-220 NSD206 TO-202 RCP700D TO-202
MJE2801 Case 90 2N6290 TO-220 199 SDT410 TO-3 RCA410 TO-3
2N6487 TO-220 MJE5984 Case 2N6487 TO-220 SDT411 TO-3 RCA411 TO-3
MJE2801 K Case 2 N 6487 TO-220 199 SDT413 TO-3 RCA413 TO-3
199 MJE5985 Case 2N6488 TO-220 SDT423 TO-3 RCA423 TO-3
MJE2901 Case 90 2N6107 TO-220 199 SDT431 TO-3 RCA431 TO-3
2 N 6490 TO-220 MJE6040 Case 90 RCA125 TO-220 SDT6901 TO-66 2N6078 TO-66
MJE2901 K Case 2 N 6490 TO-220 BDX34A TO-220 SDT6902 TO-66 2N6078 TO-66
199 MJE6041 Case 90 RCA125 TO-220 SDT6903 TO-66 2N6078 TO-66
MJE2955 Case 90 2N6490 TO-220 BDX34B TO-220 SDT6904 TO-66 2N6078 TO-66
40878 TO-220 MJE6042 Case 90 RCA126 TO-220 SDT6905 TO-66 2N6078 TO-66
MJE2955K Case 2 N 6490 TO-220 BDX34C TO-220 SDT6906 TO-66 2N6078 TO-66
199 40878 TO-220 MJE6043 Case 90 2N6387 TO-220 SDT6907 TO-66 2N6078 TO-66
MJE3054 Case RCA3054 TO-220 BDX33A TO-220 TO-66 2N6078 TO-66
SDT6908
199
34
SDT7601 TO-3 2N5039 TO-3 T1484 TO-39 2N697 TO-39 TIP41B TO-220 BD243B TO-220
SDT7602 TO-3 2 N 5039 TO-3 T1492 TO-39 40407 TO-39 RCA41B TO-220
SDT7603 TO-3 2N5038 TO-3 T1493 TO-39 2N1613 TO-39 TIP41B TO-220
SDT7604 TO-3 2N6496 TO-3 TIP29 TO-220 BD239 TO-220 TIP41C TO-220 BD243C TO-220
SDT7605 TO-3 2N6249 TO-3 RCA29 TO-220 RCA41C TO-220
SDT7607 TO-3 2N5039 TO-3 TIP29 TO-220 TIP41C TO-220
SDT7608 TO-3 2N5039 TO-3 TIP42 TO-220 BD244 TO-220
TIP29A TO-220 BD239A TO-220
SDT7609 TO-3 2N5038 TO-3 RCA42 TO-220
RCA29A TO-220
SDT7610 TO-3 2 N 6354 TO-3 TIP42 TO-220
TIP29A TO-220
SDT7731 TO-3 2N6470 TO-3 TIP29B TO-220 BD239B TO-220 TIP42A TO-220 BD244A TO-220
SDT7732 TO-3 2N6471 TO-3 RCA29B TO-220 RCA42A TO-220
SDT7733 TO-3 2N6472 TO-3 TIP29B TO-220 TIP42A TO-220
SDT8002 TO-63 2N3266 TO-63
TIP29C TO-220 BD239C TO-220 TIP42B TO-220 BD244B TO-220
SDT8003 TO-63 2N3265 TO-63 RCA29C TO-220 RCA42B TO-220
SDT8012 TO-63 2N3266 TO-63 TIP29C TO-220 TIP42B TO-220
SDT8013 TO-63 2N3265 TO-63 TIP30 TO-220 BD240 TO-220 TIP42C TO-220 BD244C TO-220
SDT8015 TO-63 2N3266 TO-63 RCA30 TO-220 RCA42C TO-220
SDT8016 TO-63 2N3265 TO-63 TIP30 TO-220 TIP42C TO-220
SDT8105 Radial 2N3264 Radial TIP30A TO-220 BD240A TO-220 TIP110 TO-220 BDX33A TO-220
SDT8106 Radial 2N3263 Radial RCA30A TO-220 TIP111 TO-220 BDX33B TO-220
SDT8112 Radial 2N3264 Radial TIP30A TO-220 TIP112 TO-220 BDX33C TO-220
SDT8113 Radial 2N3263 Radial TIP30B TO-220 BD240B TO-220 TIP115 TO-220 BDX34A TO-220
SDT8301 TO-63 2N3266 TO-63 RCA30B TO-220 TIP116 TO-220 BDX34B TO-220
SDT8302 TO-63 2N3265 TO-63 TIP30B TO-220 TIP117 TO-220 BDX34C TO-220
SDT8303 TO-63 2N3266 TO-63 TIP30C TO-220 BD240C TO-220 TIP120 TO-220 BDX33A TO-220
RCA30C TO-220 RCA120 TO-220
SDT8304 TO-63 2N3265 TO-63
TO-220 TIP120 TO-220
SDT9201 TO-3 2N3055 TO-3 TIP30C
SDT9202 TO-3 2N6254 TO-3 TIP31 TO-220 BD241 TO-220 TIP121 TO-220 BDX33B TO-220
RCA31 TO-220 RCA121 TO-220
SDT9203 TO-3 2N4348 TO-3
TIP31 TO-220 TIP121 TO-220
SDT9204 TO-3 2N4348 TO-3
TIP122 TO-220 BDX33C TO-220
SDT9205 TO-3 2N3055 TO-3
RCA122 TO-220
SDT9206 TO-3 2 N 3055 TO-3 RCA31A TO-220
TIP122 TO-220
SDT9207 TO-3 2N6254 TO-3 TIP31A TO-220
TIP31B TO-220 BD241B TO-220 TIP125 TO-220 BDX34A TO-220
SDT9208 TO-3 2N4348 TO-3
RCA31B TO-220 RCA125 TO-220
SDT9209 TO-3 2N4348 TO-3
TIP31B TO-220 TIP125 TO-220
SDT9210 TO-3 2N6253 TO-3
TO-3 TO-220 BD241C
TIP126 TO-220 BDX34B TO-220
SDT9701 TO-3 2N6258 TIP31C TO-220
RCA126 TO-220
SDT9702 TO-3 2N4348 TO-3 RCA31C TO-220
TIP126 TO-220
SDT9703 TO-3 2N4348 TO-3 TIP31C TO-220
2N6254 TO-3 TIP32 TO-220 BD242 TO-220 TIP127 TO-220 BDX34C TO-220
SDT9704 TO-3
RCA32 TO-220 TIP127 TO-220
SDT9705 TO-3 2N4348 TO-3
SDT9706 TO-3 2N4348 TO-3 TIP32 TO-220 TIP140 TO-218 2N6387 TO-220
2N3055 TO-3 TIP141 TO-218 2N6530 TO-220
SDT9707 TO-3 TIP32A TO-220 BD242A TO-220
TIP142 TO-218 2N6531 TO-220
SDT9801 TO-3 2N6254 TO-3 RCA32A TO-220
SDT9802 TO-3 2N6254 TO-3 TIP32A TO-220 TIP145 TO-218 2N6666 TO-220
2N6254 TO-3 TIP32B TO-220 BD242B TO-220 TIP146 TO-218 2N6667 TO-220
SDT9803 TO-3
2N3773 TO-3 RCA32B TO-220 TIP147 TO-218 2N6668 TO-220
SDT9804 TO-3
SE9300 TO-220 RCA120 TO-220 TIP32B TO-220 TIP525 TO-3 BUX27A TO-3
TIP531 TO-3 2N6250 TO-3
SE9301 TO-220 RCA121 TO-220 TIP32C TO-220 BD242C TO-220
RCA122 TO-220 RCA32C TO-220 TIP535 TO-3 BUX17A TO-3
SE9302 TO-220
TIP32C TO-220 TIP538 TO-3 2N6250 TO-3
SE9303 TO-3 2N6384 TO-3
TIP33 TO-3P 2 N 6486 TO-220 TIP539 TO-3 2N6250 TO-3
SE9304 TO-3 2N6385 TO-3
TIP33A TO-3P 2N6487 TO-220 TIP544 TO-3 2N6248 TO-3
SPC410 TO-3 RCA410 TO-3
2N6469 TO-3
TIP546 TO-3
TIP33B TO-3P 2 N 6488 TO-220
SPC411 TO-3 RCA411 TO-3 TIP640 TO-3 2N6384 TO-3
TIP34 TO-3P 2N6489 TO-220
TIP34A TO-3P 2 N 6490 TO-220
TIP34B TO-3P 2N6491 TO-220
SPC431 TO-3 RCA431 TO-3 TIP645 TO-3 2 N 6666 TO-3
TIP41 TO-220 BD243 TO-220
STS410 TO-3 RCA410 TO-3 TIP646 TO-3 2N6667 TO-3
RCA41 TO-220
STS41 TO-3 RCA411 TO-3 TIP41 TO-220 TIP647 TO-3 2N6668 TO-3
STS413 TO-3 RCA413 TO-3 TIP2955 TO-3P 2 N 6490 TO-220
STS423 TO-3 RCA423 TO-3 40878 TO-220
RCA41A TO-220
STS431 TO-3 RCA431 TO-3 TIP3054 TO-220- RCA3054 TO-220
TIP41A TO-220
T1482 TO-39 40311 TO-39
35
M
DD
B
EB
E D
B
B
E
E

TIP3055 TO-3P RCA3055 TO-220 BstB0106C MU22 S2062A TO-220 BstC0326 SC88 2N1849 TO-48
TIP5530 TO-3P 2N6099 TO-220 BstB0113C MU22 S2062B TO-220 BstC0313S6SC88 2N1846 TO-48
TS2218 TO-39 2N1613 TO-39 BstB0126C MU22 S2062D TO-220 BstC0326S6 SC88 2N 1 849 TO-48
TS2219 TO-39 2N1711 TO-39 BstB0133C MU22 S2062E TO-220 BstC0506E TO-66 2N3228 TO-66
TS2904 TO-39 40406 TO-39 BstBOHOC MU22 S2062M TO-220 BstC0513E TO-66 2N3228 TO-66
SILICON CONTROLLED BstB0106CS4 MU22 S2062A TO-220 BstC0526E TO-66 2N3525 TO-66
BstB0113CS4 MU22 S2062B TO-220 BstC0533E TO-66 2N4101 TO-66
RECTIFIERS BstB0126CS4 MU22 S2062D TO-220 BstC0540E TO-66 2N4101 TO-66
2N1842 TO-48 2N1842A TO-48 BstB0133CS4 MU22 S2062E TO-220
2N1843 TO-48 2N1843A TO-48 BstB0140CS4 MU22 S2062M TO-220 BstC0546E TO-66 2N4101 TO-66
2N1844 TO-48 2N1844A TO-48 BstC0506F TO-66 2N3228 TO-66
BstB0106D MU22 S2062A TO-220
BstB0113D MU22 S2062B TO-220
BstB0126D MU22 S2062D TO-220
2N1847 TO-48 2N1847A TO-48 BstB0133D MU22 S2062E TO-220 BstC0533F TO-66 2N4101 TO-66
2N1848 TO-48 2N1848A TO-48 BstBOHOD MU22 S2062M TO-220 BstC0540F TO-66 2N4101 TO-66
BstB0106E MU22 S2062A TO-220
2N1850 TO-48 2N1850A TO-48 BstC0506G TO-66 2N3228 TO-66
BstB0113E MU22 S2062B TO-220
2N4441 Case 90 S122F TO-220 BstC051 3G TO-66 2N3228 TO-66
BstB0126E MU22 S2062D TO-220
2N4442 Case 90 S122B TO-220 BstB0133E MU22 S2062E TO-220 BstC0526G TO-66 2N3525 TO-66
2N4443 Case 90 S122D TO-220 BstB0140E MU22 S2062M TO-220 BstC0533G TO-66 2N4101 TO-66
2N4444 Case 90 S122M TO-220 BstC0540G TO-66 2N4101 TO-66
BstB0106F MU22 S2062A TO-220
2N6236 TO- 126 S2060Y TO-220 BstC0546G TO-66 2N4101 TO-66
BstB0113F MU22 S2062B TO-220
2N6237 TO-126 S2060F TO-220 BstC0506H TO-66 2N3228 TO-66
BstB0126F MU22 S2062D TO-220
2N6238 TO-126 S2060A TO-220 BstB0133F MU22 S2062E TO-220 BstC0513H TO-66 2N3228 TO-66
2N6239 TO-126 S2060B TO-220 BstB0140F MU22 S2062M TO-220 BstC0526H TO-66 2N3525 TO-66
2N6240 TO-126 S2060D TO-220 BstC0533H TO-66 2N4101 TO-66
TO-126
BstB0206B MU23 S2061A TO-220
2N6241 S2060M TO-220 BstC0540H TO-66 2N4101 TO-66
BstB0213B MU23 S2061 TO-220
10RC10A TO-48 2N1844A TO-48 BstC0546H TO-66 2N4101 TO-66
BstB0226B MU23 S2061 TO-220
10RC10AS24 TO-48 2N3650 TO-48 MU23 S2061 TO-220 BT1 02-300 R TO-220 S2800C TO-220
BstB0233B
10RC20A TO-48 2N1846A TO-48 BstB0206BS4 MU23 S2061A TO-220 BT102-500R TO-220 S2800E TO-220
10RC20AS24 TO-48 2N3650 TO-48 BTW30-300 TO-48 2 N 3657 TO-48
BstB0213BS4 MU23 S2061 TO-220
10RC30A TO-48 2N1848A TO-48 BTW30-400 TO-48 2N3658 TO-48
BstB0226BS4 MU23 S2061 TO-220
10RC30AS24 TO-48 2N3651 TO-48 BTW30-500 TO-48 S7432M TO-48
BstB0233BS4 MU23 S2061 TO-220
10RC40A TO-48 2N1849A TO-48 BstB0206BS5 MU23 S2061A TO-220 BTW30-600 TO-48 S7432M TO-48
10RC40AS24 TO-48 2N3652 TO-48 BstB0213BS5 MU23 S2061 TO-220 BTW31-300 TO-48 2N3657 TO-48
10RC50A TO-48 2N1850A TO-48
BTW3 1-400 TO-48 2 N 3658 TO-48
BstB0226BS5 MU23 S2061 TO-220
10RC50AS24 TO-48 S7410M TO-48
BstB0233BS5 MU23 S2061 TO-220 BTW3 1-500 TO-48 S7412M TO-48
10RC60AS24 TO-48 S7410M TO-48
BTW3 1-600 TO-48 S7412M TO-48
BstB0206C MU23 S2062A TO-220
16RC10A TO-48 2N683 TO-48 BstB0213C MU23 S2062B TO-220 BTW47-600 TO-48 S6410M stud
16RC10AS24 TO-48 2N3650 TO-48 BstB0233C MU23 S2062E TO-220 BTW92-600 TO-48 2N3899 stud
16RC20A TO-48 2N685 TO-48
BstB0240C MU23 S2062M TO-220 BTW92-800 TO-48 S6410N stud
16RC20AS24 TO-48 2N3651 TO-48
16RC30A TO-48 2N687 TO-48 BstB0206CS4 MU23 S2062A TO-220 BTX31-100 TO-48 S7310A TO-48
BstB0213CS4 MU23 S2062B TO-220 BTX31-200 TO-48 S7310B TO-48
16RC30AS24 TO-48 2 N 3652 TO-48
BstB0226CS4 MU23 S2062D TO-220 BTX3 1-400 TO-48 S7310D TO-48
16RC40A TO-48 2N688 TO-48
BstB0233CS4 MU23 S2062E TO-220 BTX3 1-500 TO-48 S7310M TO-48
16RC40AS24 TO-48 2N3653 TO-48
BstB0240CS4 MU23 S2062M TO-220 BTX3 1-600 TO-48 S7310M TO-48
16RC50A TO-48 2N689 TO-48
BstB0206D MU23 S2062A TO-220 BTX32-100 TO-48 S7310B TO-48
16RC50AS24 TO-48 S7410M TO-48
BstB0213D MU23 S2062B TO-220 BTX32-400 TO-48 S7310D TO-48
16RC60A TO-48 2N690 TO-48 BTX32-500 TO-48 S7310M TO-48
16RC60AS24 TO-48 S7410M TO-48
BstB0226D MU23 S2062D TO-220
BstB0233D MU23 S2062E TO-220 BTX32-600 TO-48 S7310M TO-48
BstB0106B MU22 S2061A TO-220 BTX33-100 TO-48 S6210A TO-48
BstB0113B MU22 S2061 TO-220 BstB0240D MU23 S2062M TO-220
BTX33-200 TO-48 S6210B TO-48
BstB0126B MU22 S2061 TO-220 BstB0206E MU23 S2062A TO-220
BTX33-400 TO-48 S6210D TO-48
BstB0133B MU22 TO-220
BstB0213E MU23 S2062B TO-220
BTX33-500 TO-48 S6210M TO-48
S2061
MU22 BstB0226E MU23 S2062D TO-220
TO-48
BstB0140B S2061 TO-220 BTX33-600 TO-48 S6210M
BstB0106BS4 MU22
BstB0233E MU23 S2062E TO-220
TO-48
S2061A TO-220 BTX70-100 TO-48 S6210A
BstB0113BS4 MU22 S2061 TO-220 BstB0240E MU23 S2062M TO-220 BTX70-200 TO-48 S6210B TO-48
BstB0126BS4 MU22 S2061 TO-220 BstB0206F MU23 S2062A TO-220 BTX70-400 TO-48 S6210D TO-48
BstB0133BS4 MU22 TO-220
BstB0213F MU23 S2062B TO-220 BTX70-500 TO-48 S6210M TO-48
S2061
BstB0226F MU23 S2062D TO-220 BTX70-600 TO-48 S6210M TO-48
S2061A
BstB0233F MU23 S2062E TO-220 BTX71-100 TO-48 S7310B TO-48
S2061
BstB0126BS5 MU22 S2061 TO-220 BstB0240F MU23 S2062M TO-220 BTX7 1-200 TO-48 S7310B TO-48
BstB0133BS5 MU22 S2061 TO-220 BstC0313 SC88 2N1846 TO-48 BTX7 1-400 TO-48 S7310D TO-48
36.
SILICON CONTROLLED RECTIFIERS (CONT'D)
BTX7 1-500 TO-48 S7310M TO-48 C33C press-fit 2N3872 press-fit C45F TO-49 TAS8612A stud
BTX7 1-600 TO-48 S7310M TO-48 C33D press-fit 2N3872 press-fit C45G TO-49 TAS8612B stud
BTX72-100 TO-48 S7310M TO-48 C33F press-fit 2N3870 press-fit
C45H TO-49 TAS8612D stud
BTX72-200 TO-48 S7310M TO-48 C33U press-fit 2N3870 press-fit C45M TO-49 TAS8612M stud
BTX72-400 TO-48 S7310M TO-48 C34A2 stud 2N3650 TO-48 C45N TO-49 TAS8612N stud
BTX72-500 TO-48 S7310M TO-48 C34B2 stud 2N3651 TO-48 C45U TO-49 TAS8612A stud
BTX72-600 TO-48 S7310M TO-48 C34C2 stud 2N3652 TO-48 C106A TO- 202 C106A TO-202
BTX73-100 TO-48 2N683 TO-48 C34D2 stud 2N3653 TO-48 S106A TO-202
BTX73-200 TO-48 2N685 TO-48 C34E2 stud S7410M TO-48 C106B TO-202 C106B TO-202
BTX73-400 TO-48 2N688 TO-48 C34F2 stud 2N3650 TO-48 S106B TO-202
BTX73-500 TO-48 2N689 TO-48 C35A TO-48 2N683 TO-48 C106C TO-202 C106C TO-202
BTX73-600 TO-48 2N690 TO-48 2N3896 stud S106C TO-202
BTX74-100 TO-48 S6210A TO-48 C106D TO-202 C106D TO-202
C35B TO-48 2N685 TO-48
BTX74-200 TO-48 S6210B TO-48 S106D TO-202
2N3897 stud
BTX74-400 TO-48 S6210D TO-48 C106F TO-202 C106F TO-202
C35C TO-48 2N687 TO-48
BTX74-500 TO-48 S6210M TO-48 S106F TO-202
2N3898 stud
BTX74-600 TO-48 S6210M TO-48 C106Q TO-202 C106Q TO-202
C35D TO-48 2N688 TO-48
BTY87-400 TO-48 S6210D stud
S106Q TO-202
2N3898 stud
BTY87-400R TO-48 2N3898 stud
C106Y TO-202 C106Y TO-202
BTY87-500 TO-48 S6210M stud C35E TO-48 2N689 TO-48
2N3899 stud S106Y TO-202
BTY87-500R TO-48 2N3899 stud
C107A TO-202 C107A TO-202
C35F TO-48 2N682 TO-48
BTY87-600 TO-48 S6210M stud
S107A TO-202
2N3896 stud
BTY87-600R TO-48 2N3899 stud
C107B TO-202 C107B TO-202
C35G TO-48 2N684 TO-48
BTY87-800R TO-48 S6410N stud
S107B TO-202
2N3897 stud
BTY9 1-400 TO-48 S6210D stud
C107C TO-202 C107C TO-202
C35H TO-48 2N686 TO-48
BTY91-400R TO-48 2 N 3898 stud S107C TO-202
2 N 3898 stud
BTY9 1-500 TO-48 S6210M stud
C107D TO-202 C107D TO-202
C35M TO-48 2N690 TO-48
BTY91-500R TO-48 2N3899 stud
S107D TO-202
BTY91 -600 TO-48 S6210M stud
2N3899 stud
C35U TO-48 2N681 TO-48 C107F TO-202 C107F TO-202
BTY91-600R TO-48 2N3899 stud
S107F
2N3896 stud TO-202
BTY91-800R TO-48 S641 ON stud C107Q TO-202 C107Q TO-202
C20A stud S6210A stud C36A TO-48 2N1844A TO-48
TO-48 2N1846A TO-48 S107Q TO-202
C20B stud S6210B stud C36B
C36C TO-48 2N1848A TO-48 C107Y TO-202 C107Y TO-202
C20C stud S6210C stud
S107Y
C36D TO-48 2N1849A TO-48 TO-202
C20D stud S6210D stud
C36E TO-48 2N1850A TO-48 C122A TO-220 S122A TO-220
C20F stud S6210A stud S2800A TO-220
C20U stud S6210A stud C36F TO-48 2N1843A TO-48
C122B TO-220 S122B TO-220
C22A press-f t S6200A press-fit C36G TO-48 2N1845A TO-48
C36H TO-48 2N1847A TO-48 S2800B TO-220
C22B press-f t S6200B press-fit
C36U TO-48 2N1842A TO-48 C122C TO-220 S122C TO-220
C22C press-f t S6200C press-fit
C38A TO-48 2N683 TO-48 S2800C TO-220
C22D press-f t S6200D press-fit C122D TO-220 S122D TO-220
C22F press-f t S6200A press-fit
C38B TO-48 2N685 TO-48
C38C TO-48 2N687 TO-48 S2800D TO-220
C22U press-f t S6200A press-fit C122E TO-220 S122E TO-220
C38D TO-48 2N688 TO-48
C30A stud 2N3896 stud S2800E TO-220
C38E TO-48 2N689 TO-48
C30B stud 2N3897 stud
C38F TO-48 2N682 TO-48 C122F TO-220 S122F TO-220
C30C stud 2N3898 stud S2800F TO-220
C38G TO-48 2N684 TO-48
C30D stud 2N3898 stud C122G TO-220 S122G TO-220
C38M TO-48 2N686 TO-48
C30P stud 2N3896 stud S2800G TO-220
C38U TO-48 2N681 TO-48
C30U stud 2N3896 stud C122M TO-220 S122M TO-220
C40A TO-48 2N3650 TO-48
C31A stud 2N3896 stud
TO-48 S2800M TO-220
C40B TO-48 2N3651
C31B stud 2N3897 stud C122Y TO-220 S122A TO-220
C40C TO-48 2N3652 TO-48
C31C stud 2N3898 stud S2800A TO-220
C31D stud 2N3898 stud C40D TO-48 2N3653 TO-48 C137E TO-48 2N3899 stud
C31P stud 2N3896 stud C40E TO-48 S7410M TO-48 C137M TO-48 2N3899 stud
C31U stud 2 N 3896 stud C40F TO-48 2N3650 TO-48 C137N TO-48 S6410N stud
C40G TO-48 2N3651 TO-48
C32A press-f t 2N3870 press-fit C137S TO-48 S6410N stud
C40H TO-48 2N3652 TO-48 C140A TO-48 2N3650 TO-48
C32B press-f t 2N3871 press-fit
C40U TO-48 2N3650 TO-48 C140B TO-48 2N3651 TO-48
C32C press-f t 2N3872 press-fit
C45A TO-49 TAS8612A stud CHOC TO-48 2N3652 TO-48
C32D press-f t 2N3872 press-fit
C45B TO-49 TAS8612B stud C140D TO-48 2N3653 TO-48
C32F press-f t 2N3870 press-fit
C45C TO-49 TAS8612D stud
C140F
C32U press-f t 2N3870 press-fit TO-48 2N3654 TO-48
C45D TO-49 TAS8612D stud C141A TO-48 2N3655 TO-48
C33A press-f t 2N3870 press-fit
C45E TO-49 TAS8612M stud C141B TO-48 2N3656 TO-48
C33B press-f t 2N3871 press-fit
37
C141C TO-48 2N3657 TO-48 CS0602604 MU22 S107B TO-202 MCR3000 8Case90S122M TO-220
C141D TO-48 2N3658 TO-48 CS0604602 MU22 S108D TO-202 MCR3818 1 press-f itS6200A press-fit
CS0604604 MU22 S107D TO-202 MCR3818 3 press-f itS6200A press-fit

C141F TO-48 2N3654 TO-48
C220A stud S6210A stud CS0606602 MU22 S108M TO-202 MCR3818 5 press-f itS6200D press-fit
C220A2 ISOstud S6220A ISOstud CS1 02603 MU23 S108B TO-202 MCR3818 7 press-f itS6200M press-fit
C220B stud S6210B stud CS1 04603 MU23 S108D TO-202 MCR3835 1 press-f it 2 N 3870 press-fit
C220B2 ISOstud S6220B ISOstud CS1 06603 MU23 S108E TO-202 MCR3835 2 press-f it2N3870 press-fit
CS1 08603 MU23 S108M TO-202 MCR3835 3 press-f it2N3870 press-fit

C220C stud S6210C stud
C220C2 ISOstud S6220C ISOstud CS302D02 TO-220 S2062B TO-220 MCR3835 4 press-f it2N3871 press-fit
C220D stud S6210D stud CS304D02 S2062D

TO-220 TO-220 MCR3835 5 press-f it2N3872 press-fit
C220D2 ISOstud S6220D ISOstud MCR3835 6 press-f it2N3872 press-fit

CS305D02 S2062E
TO-220 TO-220
C220E S6210M ISOstud MCR3835 •7 press-f it2N3873 press-fit
stud CS306D02 S2062M
TO-220 TO-220
MCR3835 8 press-f it2N3873 press-fit
C220E2 ISOstud S6220M ISOstud EC106A1 S106A
TO-202 TO-202
C220F stud S6210A stud EC106B1 S106B
TO-202 TO-202 MCR3918 1 stud S6210A stud
C220F2 ISOstud S6220A ISOstud EC106M1 S106M

TO-202 TO-202 MCR3518 3 stud S6210A stud
C220U S6210A MCR3918 5 stud S6210D stud

stud stud EC107A1 S107A
TO-202 TO-202
S6220A
MCR3918 7 stud S6210M stud
C220U2 ISOstud ISOstud EC107B1 S107B
TO-202 TO-202
MCR3935 1 stud 2N3896 stud
C222A press-fit S6200A press-fit EC107M1 S107M
TO-202 TO-202
S6200D IR140A TO-482 N 3650 TO-48 MCR3936 2 stud 2 N 3896 stud
C222B press-fit press-fit
S6200D IR140B TO-482N3651 TO-48 MCR9935 3 stud 2N3896 stud
C222C press-fit press-fit
C222D S6200D
MCR3935 4 stud 2 N 3897 stud
press-fit press-fit IR140C TO-482N3652 TO-48
C222E S6200M
press-fit press-fit IR140D TO-482N3653 TO-48
C222F press-fit S6200A press-fit IR140F TO-482N3654 TO-48
C222U press-fit S6200A/ press-fit IR141A TO-482N3655 TO-48 MCR3935 7 stud 2N3899 stud
CS5-2T TO-66 2N3228 TO-66 IR141B TO-482N3656 TO-48 MCR3935 8 stud 2N3899 stud
CS5-4T TO-66 2N3525 TO-66 NL-C35A TO-48 2N683 TO-48

IR141C TO-482N3657 TO-48
CS5-5.5T TO-66 2N4101 TO-66 NL-C35B TO-48 2N685 TO-48
IR141D TO-482N3658 TO-48
NL-C35C TO-48 2N687 TO-48
CS10-02M press-fit S6200A press-fit IR141F TO-482N3654 TO-48
CS10-02N stud S6210A stud MCR106-1 Case 77 S2061Y TO-220 NL-C35D TO-48 2N688 TO-48
CS10-05M press-fit S6200A press-fit MCR 106-2 Case 77 S2061 TO-220 NL-C35E TO-48 2N689 TO-48
CS10-05N stud S6210A stud NL-C35G TO-48 2N684 TO-48
MCR106-3 Case 77 S2061 TO-220
NL-C35H TO-48 2N686 TO-48
CS10-1M press-fit S6200A press-fit MCR106-4 Case 77 S2061 TO-220
NL-C35M TO-48 2N689 TO-48
CS10-1N stud S6210A stud MCR106-5 Case 77 S2061C TO-220
CS10-2M press-fit S6200B press-fit MCR106-6 Case 77 S2061 TO-220 NL-C36A TO-48 2N1844A TO-48
CS10-2N stud S6210B stud MCR106-7 Case 77 S2061 TO-220 NL-C36B TO-48 2N1846A TO-48
CS10-4M press-fit S6200D press-fit NL-C36C TO-48 2N1848A TO-48
MCR106-8 Case 77 S2061 TO-220
NL-C36D TO-48 2N1849A TO-48
CS10-4N stud S6210D stud MCR107-1 Case 77 S2062Y TO-220
NL-C36E TO-48 2N1850A TO-48
CS10-6M press-fit S6200M press-fit MCR107-2 Case 77 S2062F TO-220
CS10-6N stud S6210D stud MCR107-3 Case 77 S2062A TO-220 NL-C36G TO-48 2N1845A TO-48
CS20-05M press-fit S6200A press-fit MCR 107-4 Case 77 S2062B TO-220 NL-C36H TO-48 2N1847A TO-48
CS20-05N stud S6210A stud NL-C40A TO-48 2N3650 TO-48
MCR107-5 Case 77 S2062C TO-220
NL-C40B TO-48 2N3651 TO-48
CS20-1M press-fit S6200A press-fit MCR107-6 Case 77 S2062D TO-220
NL-C40C TO-48 2N3652 TO-48
CS20-1N stud S6210A stud MCR 107-7 Case 77 S2062E TO-220
CS20-2M press-fit S6200B press-fit MCR406-1 Case 90 S2060Y TO-220 NL-C40D TO-48 2N3654 TO-48
CS20-2N stud S6210B stud MCR406-2 Case 90 S2060F TO-220 NL-C40E TO-48 S7410M TO-48
CS20-4M press-fit S6200D NL-C40G TO-48 2N3651 TO-48
press-fit MCR406-3 Case 90 S2060A TO-220
CS20-4N S6210D NL-C40H TO-48 2N3652 TO-48
stud stud MCR406-4 Case 90 S2060B TO-220
MCR407-1 Case 90 S2061 TO-220
NL570M TO-48 2N690 TO-48
CS20-6M press-fit S6200M press-fit
CS20-6N stud S6210M stud MCR407-2 Case 90 S2061 TO-220 PS08 press-fit S6200A press-fit
CS35-02M press-fit 2N3870 press-fit MCR407-3 Case 90 S2061A TO-220 PS18 press-fit S6200A press-fit
CS35-02N stud 2N3896 TO-220 PS020 press-fit S6200A press-fit

stud MCR407-4 Case 90 S2061
CS35-05M press-fit 2N3870 PS28 press-fit S6200B press-fit
press-fit MCR1718-5 TO-48 2N3653 TO-48
PS035 press-fit 2N3870 press-fit
CS35-05N stud 2 N 3896 stud MCR 171 8-6 TO-48 2N3653 TO-48
CS35-1M press-fit 2N3870 PS38 press-fit S6200D press-fit
press-fit MCR 171 8-7 TO-48 S7410M TO-48
CS35-1N stud 2 N 3896 stud MCR1718-8 TO-48 S7410M TO-48 PS48 press-fit S6200D press-fit
CS35-2M press-fit 2IM3871 press-fit
MCR3000-1 Case 90 S122F TO-220 PS58 press-fit S6200M press-fit
CS35-2N stud 2N3897 stud
MCR3000-2 Case 90 S122F TO-220 PS68 press-fit S6200M press-fit
CS35-4M press-fit 2N3872 press-fit MCR3000-3 Case 90 S122A TO-220 PS120 press-fit S6200M press-fit
CS35-4N stud 2N3898 stud MCR3000-4 Case 90 S122B TO-220 PS135 press-fit 2N3870 press-fit
CS35-6M press-fit 2N3873 press-fit
MCR3000-5 Case 90 S122C TO-220 PS220 press-fit S6200B press-fit
CS35-6N stud 2 N 3899 stud PS235 press-fit 2N3871 press-fit
MCR3000-6 Case 90 S122D TO-220
CS0602602 MU22 S108B TO-202
TO-220 PS320 press-fit S6200D press-fit
MCR3000-7 Case 90 S122E
38
M


PS335 press-fit 2N3872 press-fit RTU0202 stud 2N3896 stud S4010B ISOstud S6220D ISOstud
PS420 press-fit S6200D press-fit RTU0205 stud 2N3896 stud S4010G press-fit S6200D press-fit
PS435 press-fit 2N3872 press-fit RTU0210 stud 2N3896 stud S4010H stud S6210D stud
PS520 press-fit S6200M press-fit RTU0220 stud 2N3897 stud S4016B ISOstud S6220D ISOstud
PS535 2N3873 S4016G press-fit S6200D press-fit
press-fit press-fit RTU0230 stud 2N3898 stud
PS620 press-fit S6200M press-fit RTU0240 stud 2N3898 stud S4016H stud S6210D stud
PS635 RTU0250 stud S6410N stud S4025G press-fit 2N3872 press-fit
press-fit 2N3873 press-fit
RCA106A TO-220AB S2060A TO-220AB RTU0260 stud S6410N stud S4025H stud 2N3898 stud
S4035G press-fit 2N3872 press-fit
RCA106B TO-220AB S2060B TO-220AB RTU0602 stud 2N3896 stud
RCA106D TO-220AB S2060D TO-220AB RTU0605 stud 2N3896 stud S4035H stud î\jo»b stud
RCA106E TO-220AB S2060E TO-220AB RTU0610 stud 2N3896 stud S6003RS2 TO-220 S2060M TO-220
RCA106F TO-220AB S2060F TO-220AB RTU0620 stud 2N3897 stud S6003RS3 TO-220 S2061 TO-220
RCA106Q TO-220AB S2060Q TO-220AB RTU0630 stud 2N3898 stud S6006B ISOstud S6220M ISOstud
RCA106M TO-220AB S2060M TO-220AB RTU0640 stud 2N3898 stud S6006G press-fit S6200M press-fit
RCA106Y TO-220AB S2060Y TO-220AB RTU0650 stud 2N3899 stud S6006H stud S6210M stud
RCA 107 A TO-220AB S2061A TO-220AB RTU0660 stud 2N3899 stud S6008G press-fit S6200M press-fit
RCA107B TO-220AB S2061B TO-220AB RTU0705 stud 2N3896 stud S6008H stud S6210M stud
RCA107C TO-220AB S2061C TO-220AB RTU0710 stud 2N3896 stud S6010B ISOstud S6220M ISOstud
RCA107D TO-220AB S2061D TO-220AB
RTU0720 stud 2N3897 stud S6010G press-fit S6200M press-fit
RCA107E TO-220AB S2061E TO-220AB 2N3898 S6010H stud S6210M stud
RTU0730 stud stud
RCA107F TO-220AB S2061F TO-220AB
RTU0740 stud 2N3898 stud S6016B ISOstud S6220M ISOstud
RCA107Q TO-220AB S2061Q TO-220AB
RTU0750 stud 2N3899 stud S6016G press-fit S6200M press-fit
RCA107M TO-220AB S2061M TO-220AB RTU0760 stud 2 N 3899 stud S6016H stud S6210M stud
RCA107Y TO-220AB S2061Y TO-220AB S6025G press-fit 2N3873
S0525G press-fit 2N3870 press-fit press-fit
RCA108A TO-220-AB S2062A TO-220AB S6025H stud 2 N 3899 stud
S1003RS2 TO-220 S2060A TO-220
RCA108B TO-220AB S2062B TO-220AB
S1003RS3 TO-220 S2061A TO-220 S6035G press-fit 2N3873 press-fit
RCA108C TO-220AB S2062C TO-220AB
S1006B ISOstud S6220A ISOstud S6035H stud 2N3899 stud
RCA108D TO-220AB S2062D TO-220AB
S1006G press- fit S6200A press-fit S8025C TO-3 S6410N stud
RCA108E TO-220AB S2062E TO-220AB
RCA108F TO-220AB S2062F TO-220AB S1006H stud S6210A stud S8025D ISOstud S6420N ISOstud
S1008B ISOstud S6220A ISOstud S8025G press-fit S6400N press-fit
RCA108Q TO-220AB S2062Q TO-220AB
RCA108M TO-220AB S2062M TO-220AB S1008G press- fit S6200A press-fit S8025H stud S6410N stud
RCA108Y TO-220AB S2062Y TO-220AB S1008H stud S6210A stud S8035G press-fit S6400N press-fit
RTS0202 press-fit S6200A press-fit S1010B ISOstud S6220A ISOstud S8035H stud S6410N stud
RTS0205 press-fit S6200A press-fit S1010G press- fit S6200A press-fit SPS08 stud S6210A stud
RTS0210 press-fit S6200A press-fit S1010H stud S6210A stud SPS18 stud S6210A stud
RTS0220 press-fit S6200B press-fit S1016B ISOstud S6220A ISOstud SPS020 stud S6210A stud
RTS0230 press-fit S6200D press-fit S1016G press- fit S6200A press-fit SPS28 stud S6210B stud
RTS0240 press-fit S6200D press-fit S1016H stud S6210A stud SPS38 stud S6210D stud
RTS0250 press-fit S6200M press-fit S1025G press- fit 2N3870 press-fit SPS48 stud S6210D stud
RTS0260 press-fit S6200M press-fit S1025H stud 2N3896 stud SPS58 stud S6210M stud
RTS0502 press-fit S6200A press-fit S1035G press fit 2N3870 press-fit SPS68 stud S6210M stud
RTS0505 press-fit S6200A press-fit S1035H stud 2N3896 stud SPS120 stud S6210A stud
RTS0510 press-fit S6200A press-fit S2003RS2 TO-220 S2060B TO-220 SPS220 stud S6210B stud
RTS0520 press-fit S6200B press-fit S2003RS3 TO-220 S2061B TO-220 SPS320 stud S6210D stud
RTS0530 press-fit S6200D press-fit S2006B ISOstud S6220B ISOstud SPS420 stud S6210D stud
RTS0540 press-fit S6200D press-fit S2006G press fit S6200B press-fit SPS520 stud S6210M stud
RTS0550 press-fit S6200M press-fit S2006H stud S6210B stud SPS620 stud S6210M stud
RTS0602 press-fit S6200A press-fit S2008B ISOstud S6220B ISOstud TA-6-3-100TO-66 S3704A TO-66
RTS0605 press-fit S6200A press-fit S2008G press -fit S6200B press-fit TA6-3-200 TO-66 S3704B TO-66
RTS0610 press-fit S6200A press-fit S2008H stud S6210B stud TA6-3-400 TO-66 S3704D TO-66
RTS0620 press-fit S6200B press-fit S2010B ISOstud S6220B ISOstud TA6-3-500 TO-66 S3704E TO-66
RTS0630 press-fit S6200D press-fit S2010G press -fit S6200B press-fit TA6-3-600 TO-66 S3704M TO-66
RTS0640 press-fit S6200D press-fit S2010H stud S6210B stud TA6-3-700 TO-66 S3704S TO-66
RTS0650 press-fit S6200M press-fit
S2016B ISOstud S6220B ISOstud TA6-6-100 TO-66 2N3668 TO-66
RTS0660 press-fit S6200M press-fit
S2016G press -fit S6200B press-fit TA6-6-400 TO-66 2N3670 TO-66
RTU0102 stud S6210A stud S2016H stud S6210B stud TA6-6-500 TO-66 2N4103 TO-66
RTU0105 stud S6210A stud S2025G press -fit 2N3871 press-fit TA6-6-600 TO-66 2N4103 TO-66
S6210A stud TA6-7-100 TO-48 S7310B TO-48
RTU0110 stud S2025H stud 2N3897 stud
S6210B stud TA6-7-200 TO-48 S7310B TO-48
RTU0120 stud S2035G press-fit 2N3871 press-fit
S6210D stud TA6-7-400 TO-48 S7310D TO-48
RTU0130 stud S2035H stud 2N3897 stud
S6210D stud TA6-7-500 TO-48 S7310M TO-48
RTU0140 stud S4006B ISOstud S6220D ISOstud
TA6-7-600 TO-48 S7310M TO-48
RTU0150 stud S6210M stud S4006G press-fit S6200D press-fit
TA6-10-1Pn TO-48 S7310B TO-48
RTU0160 stud S6210M stud S4006H stud S6210D stud
39
A B
F M
B

TA6- 10-200 TO-48 S7310B TO-48 40216 TO-48 S6493M TO-48 2N6074 Case 77 2N5757 TO-5
TA6- 10-400 TO-48 S7310D TO-48 40504 TO-66 S2710B TO-66 2N6075 Case 77 2N5757 TO-5
TA6- 10-500 TO-48 S7310M TO-48 40505 TO-66 S2710D TO-66 2N6139 stud 2N5569 stud
TA6- 10-600 TO-48 S7310M TO-48 40506 TO-66 S2710M TO-66 2N6140 stud 2N5570 stud
TA6- 15- 100 TO-48 S6210A TO-48 40553 TO-66 S3700B TO-66 2N6141 stud T4111M stud
TA6- 15-200 TO-48 S6210B TO-48 40554 TO-66 S3700D TO-66 2N6142 stud 2N5569 stud
TA6-15-400TO-48 S6210D TO-48 40555 TO-66 S3700M TO-66 2N6143 stud 2N5570 stud
TA6-1 5-500 TO-48 S6210M TO-48 40654 TO-5 S2600B TO-5 2N6144 stud T4111M stud
TA6- 15-600 TO-48 S6210M TO-48 40655 TO-5 S2600D TO-5
2N6145 ISOstud T4120B ISOstud
TA6-20- 100 TO-48 S6210A TO-48 40656 TO-5 S2620B TO-5
40657 S2620D TO-5
2N6146 ISOstud T4120D ISOstud
TA6-20-200 TO-48 S6210B TO-48 TO-5
40658 TO-5 2N6147 ISOstud T4120M ISOstud
TA6-20-400 TO-48 S6210D TO-48 TO-5 S2610B
2N6151 Case 90 T2800B TO-220
TA6-20-500 TO-48 S6210M TO-48 40659 TO-5 S2610D TO-5
40680 S6420A 2N6152 Case 90 T2800D TO-220
TA6-20-600 TO-48 S6210M TO-48 stud stud
TA6-35- 100 TO-48 S6410A stud 40681 stud S6420B stud 2N6153 Case 90 T2800M TO-220
TA6-35-200 TO-48 S6410B stud 40682 ISOstud S6420D ISOstud 2N6154 Case 90 T2802B TO-220
TA6-35-400 TO-48 S6410D stud 40683 ISOstud S6420M ISOstud 2N6155 Case 90 T2802D TO-220
TA6-35-500 TO-48 S6410M stud 40735 TO-48 S7410M TO-48 2N6156 Case 90 T2802M TO-220
TA6-35-600 TO-48 S6410M stud 40749 TO-48 S6200M TO-48 2N6157 press-fit T6401 press-fit
40750 press-fit S6200B press-fit 2N6158 press-fit T6401D press-fit

TIC106A TO-220 S2060A TO-220 40751 press-fit S6200D press-fit 2N6159 press-fit T6401M press-fit
TIC106B TO-220 S2060B TO-220 40752 press-fit S6200M press-fit 2N6160 stud T6411B stud
TIC106C TO-220 S2060C TO-220 40753 stud S6210A stud 2N6161 stud T6411D stud
TIC106D TO-220 S2060D TO-220 40754 stud S6210B stud 2N6162 stud T6411M stud
TIC106F TO-220 S2060F TO-220 40755 stud S6210D stud 2N6163 ISOstud T6421B ISOstud
TIC106Y TO-220 S2060Y TO-220 40756 stud S6210M stud 2N6164 ISOstud T6421D ISOstud
TIC116A TO-220 S122A TO-220 40757 ISOstud S6220A ISOstud 2N6165 ISOstud T6421 ISOstud
S2800A TO-220 40758 ISOstud S6220B ISOstud 2N6342 TO-220 T2802B TO-220
TO-220 40759 ISOstud S6220D ISOstud 2N6343
TIC116B TO-220 S122B TO-220 T2802D TO-220
S2800B TO-220 40760 ISOstud S6220M ISOstud
2N6344 TO-220 T2802M TO-220
TIC116C TO-220 S122C TO-220 40833 TO-5 S2600M TO-5
2N6345 TO-220 T2802N TO-220
TIC116D TO-220 S122D TO-220 40834 TO-5 S2620M TO-5
2N6346 TO-220 T2800B TO-220
TIC116E TO-220 S122E TO-220 40835 TO-5 SODIUM lU-b
2N6347 TO-220 T2800D TO-220
40867 TO-220AB S2800A TO-220AB
TIC116F TO-220 S122F TO-220
TO-220AB
2N6348 TO-220 T2800M TO-220
40868 TO-220AB S2800B
TIC116M TO-220 S122M TO-220 2N6349 TO-220 T2800N TO-220
40869 TO-220AB S2800D TO-220AB
TIC126A TO-220 2 N 6395 TO-220 6T06 TO-66 T2700B TO-66
40888 TO-66 S37035F TO-66
TIC126B TO-220 2N6396 TO-220 TO-66 6T08 TO-66 T4700B TO-66
40889 TO-66 S3702S
TIC126C TO-220 S6000G TO-220 6T16 TO-66 T2700B TO-66
TIC126D TO-220 2N6397 TO-220 TRIACS 6T18 TO-66 T4700B TO-66
TIC126E TO-220 S6000E TO-220 2N6068 Case 77 T2303F TO-5 6T26 TO-66 T2700B TO-66
TIC126F TO-220 2N6349 TO-220 T2500Q TO-220 6T28 TO-66 T4700B TO-66
TIC126M TO-220 2N6398 TO-220 2 N 6068 Case 77 T2301 TO-5 6T36 TO-66 T2700D TO-66
TY504 TO-220 S2062A TO-220 2N6068B Case 77 T2300F TO-5 6T38 TO-66 T4700D TO-66
TY1004 TO-220 S2062A TO-220 2N6069 Case 77 T2303F TO-5 6T46 TO-66 T2700D TO-66
TY2004 TO-220 S2062B TO-220 T2500Y TO-220 6T48 TO-66 T4700D TO-66
TY3004 TO-220 S2062C TO-220 2N6069A Case 77 T2301 TO-5 BR Y41 -100 TO-39 2N5754 TO-39
TY4004 TO-220 S2062D TO-220 2N6069B Case 77 T2300F TO-5 BRY4 1-200 TO-39 2N5755 TO-39
TY5004 TO-220 S2062E TO-220 2N6070 Case 77 2N5754 TO-5 BRY4 1-300 TO-39 2N5756 TO-39
TY6004 TO-220 S2062M TO-220 T2500A TO-220 BRY4 1-400 TO-39 2N5757 TO-39
TY507 TO-220 S122A TO-220 2N6070A Case 77 T2301A TO-5 BRY4 1-500 TO-39 2N5757 TO-39
TY1007 TO-220 S122A TO-220 2N6070B Case 77 T2300A TO-5 BRY45-100TO-39 2N5754 TO-39
TY2007 TO-220 S122B TO-220 2N6071 Case 77 2N5755 TO-5 BRY45-200 TO-39 2N5755 TO-39
TY3007 TO-220 S122C TO-220 T2500B TO-220 BRY45-300 TO-39 2N5756 TO-39
TY4007 TO-220 S122D TO-220 2N6071A Case 77 T2301 TO-5 BRY45-400 TO-39 2N5757 TO-39
TY5007 TO-220 S122E TO-220 2N6071B Case 77 T2300B TO-5 BRY45-500 TO-39 2N5757 TO-39
TY6007 TO-220 S122M TO-220 2N6072 Case 77 2N5756 TO-5 BTR0205 TO-66 T2700B TO-66
TY510 TO-220 S2800F TO-220 T2500C TO-220 BTR0210 TO-66 T2700B TO-66
TY1010 TO-220 S2800A TO-220 2N6072A Case 77 2N5756 TO-5 BTR0220 TO-66 T2700B TO-66
TY2010 TO-220 S8200B TO-220 2N6072B Case 77 T2300D TO-5 BTR0230 TO-66 T2700D TO-66
TY3010 TO-220 S2800C TO-220 2N6073 Case 77 2N5756 TO-5 BTR0240 TO-66 T2700D TO-66
TY4010 TO-220 S2800D TO-220 T2500D TO-220 BTR0305 TO-66 T2700B TO-66
TY5010 TO-220 S2800E TO-220 2N6073A Case 77 T2301D TO-5 BTR0310 TO-66 T2700B TO-66
TY6010 TO-220 S2800M TO-220 2N6073B Case 77 T2300D TO-5 BTR0320 TO-66 T2700B TO-66
40
M
D
B MMMM
D D
B F

TRIACS (CONT'D)
BTR0330 TO-66 T2700D TO-66 BTV0405 ISOstud T4121B ISOstud BTX0550 ISOstud T4120M ISOstud
BTR0340 TO-66 T2700D TO-66 BTV0410 ISOstud T4121B ISOstud BTX0560 ISOstud T4120M ISOstud
BTR0405 TO-66 T4700B TO-66 BTV0420 ISOstud T41 21 B ISOstud BTX0605 ISOstud T6421 B ISOstud
BTR0410 TO-66 T4700 B TO-66 BTV0430 ISOstud T41 21 ISOstud BTX0610 ISOstud T6421 B ISOstud
BTR0420 TO-66 T4700B TO-66 BTV0440 ISOstud T41 21 ISOstud BTX0620 ISOstud T6421B ISOstud
BTR0430 TO-66 T4700D TO-66 BTV0450 ISOstud T41 21 ISOstud BTX0630 ISOstud T6421D ISOstud
BTR0440 TO-66 T4700D TO-66 BTV0460 ISOstud T41 21 ISOstud BTX0640 ISOstud T6421D ISOstud
BTS0305 press-f t 2N5567 press-fit BTX0650 ISOstud T6421M ISOstud
BTW1 0-1 00 TO-66 T2700B TO-66
BTS0310 press-f t 2N5567 press-fit BTX0660 ISOstud T6421M ISOstud
BTW1 0-200 TO-66 T2700B TO-66
BTS0320 press-f t 2N5567 press-fit HB26 TO-5 2N5755 TO-5
BTW1 0-300 TO-66 T2700D TO-66
BTS0330 press-f t 2N5568 press-fit
BTW1 0-400 TO-66 T2700D TO-66 HB46 TO-5 2N5756 TO-5
BTW1 1-1 00 TO-66 T270OB TO-66 H103SC TO-5 T2301 TO-5
BTS0350 press-f t T4101M press-fit H103SD TO-5 T2301A TO-5
BTW1 1 -200 TO-66 T2700B TO-66
BTS0360 press-f t T4101M press-fit H103SG TO-5 T2302F TO-5
BTW1 1-300 TO-66 T2700D TO-66
T2700D TO-66 H103SH TO-5 T2303F TO-5
BTW1 1-400 TO-66
BTW1 2-100 press-fit 2N5567 press -fit H103SS TO-5 T2300F TO-5
BTW1 2-200 press-fit 2N5567 press-fit H113SC TO-5 T2301A TO-5
BTS0430 press-f t 2N5568 press-fit H113SD TO-5 T2301A TO-5
BTW1 2-300 press-fit 2N5568 press-fit
BTS0440 press-f it 2N5568 press-fit H113SG TO-5 T2302A TO-5
BTS0450 press-f t T4101M press-fit H113SH TO-5 2N5754 TO-5
BTW1 2-500 press-fit T4101 press-fit
BTS0460 press-f t T4101M press-fit
2N5569 H113SS TO-5 T2300A TO-5
BTW13-100stud stud
BTW1 3-200 stud 2N5569 stud H123SC TO-5 T2301B TO-5
BTS0510 press-f t 2N5571 press-fit H123SD TO-5 T2301B TO-5
BTW1 3-300 stud 2N5570 stud
BTS0520 press-f t 2N5571 press-fit H123SG TO-5 T2302B TO-5
BTS0530 press-f t 2N5572 press-fit H123SH TO-5 2N5755 TO-5
BTW1 3-500 stud T4111M stud
BTW14-100TO-66 T4700B TO-66 H123SS TO-5 T2300B TO-5
BTS0550 press-f t T4100M press-fit
BTW1 4-200 TO-66 T4700B TO-66 H133SC TO-5 T2301D TO-5
BTS0560 press-f t T4100M press-fit H133SD TO-5 T2301D TO-5
BTW14-300TO-66 T4700D TO-66
BTS0605 press-f t'2N5441 press-fit H133SG TO-5 T2302D TO-5
BTW 14-400 TO-66 T4700D TO-66
H133SH TO-5 2N5756 TO-5
BTW15-100 press-fit 2N5567 press-fit
BTS0620 press-f t 2N5441 press-fit H133SS TO-5 T2300D TO-5
BTW1 5-300 press-fit 2N5568 press-fit H143SC TO-5 T2301D TO-5
BTS0640 press-f t 2 N 5442 press-fit H143SD TO-5 T2301D TO-5
BTS0650 press-f t 2N5443 press-fit H143SG TO-5 T2302D TO-5
BTS0660 2 N 5443
BTW1 5-500 press-fit T41 01 press-fit
press-f t press-fit
2N5569 H143SH TO-5 2N5756 TO-5
BTW16-100stud stud
BTU0305 stud 2N5569 stud
BTW1 6-200 stud 2N5569 stud H143SS TO-5 T2300D TO-5
BTU0310 stud 2N5569 stud
BTW1 6-300 stud 2N5570 stud H153SH TO-5 2N5757 TO-5
BTU0320 stud 2N55§9 stud H163SH TO-5 2N5757 TO-5
BTU0330 stud 2N5570 stud IT06 TO-220 T2850A TO-220
BTW1 6-500 stud T4111M stud
BTU0340 stud 2N5570 stud IT08 TO-220 T2850A TO-220
BTW18-100 press-fit 2N5571 press-fit
BTU0350 stud T4111M stud IT16 TO-220 T2850A TO-220
BTU0360 stud T4111M stud BTW1 8-200 press-fit 2N5571 press-fit
IT18 TO-220 T2850A TO-220
BTU0405 stud 2N5569 stud BTW1 8-300 press-fit 2N5572 press-fit
IT26 TO-220 T2850B TO-220
BTU0410 stud 2N5569 stud BTW1 8-400 press-fit 2N5572 press-fit IT28 TO-220 T2850B TO-220
BTU0420 stud 2N5569 stud BTW1 8-500 press-fit T41 01 press-fit IT36 TO-220 T2850D TO-220
BTU0430 stud 2N5570 stud BTW19-100 press-fit 2N5571 press-fit
IT38 TO-220 T2850D TO-220
BTU0440 stud 2N5570 stud BTW1 9-200 press-fit 2N5571 press-fit
IT46 TO-220 T2850D TO-220
BTU0450 stud T4111M stud BTW1 9-300 press-fit 2N5572 press-fit
IT48 TO-220 T2850D TO-220
BTU0460 stud T4111M stud BTW1 9-400 press-fit 2N5572 press-fit L2001 M3 TO-39 T2300B TO-39
BTU0505 stud 2N5573 stud BTW1 9-500 press-fit T4101 press-fit low profile
BTU0510 stud 2N5573 stud BTW20- 100 stud T6411B stud L2001M4 TO-39 T2300B TO-39
BTU0520 stud 2N5573 stud BTW20-200 stud T641 1 stud low profile
BTU0530 stud 2N5574 stud BTW20-300 stud T641 1 stud L2001M5 TO-39 T2301B TO-39
BTU0540 stud 2N5574 stud BTW20-400 stud T641 1 stud low profile
BTU0550 stud T4110M stud BTW20-500 stud T641 1 stud L2001M7 TO-39 T2302B TO-39
BTU0560 stud T4110M stud BTX94-400 stud T641 1 D stud low profile
BTU0605 stud T641 1 stud BTX94-500 stud T641 1 stud L2001M9 TO-39 2N5755 TO-5
BTU0610 stud T641 1 stud BTX94-600 stud T641 1 stud low profile
BTU0620 stud T641 1 stud BTX0505 ISOstud T4120B ISOstud L4001M3 TO-39 T2300D TO-39
BTU0630 stud T641 1 stud BTX0510 ISOstud T4120B ISOstud low profile
BTU0640 stud T641 1 stud BTX0520 ISOstud T4120B ISOstud L4001M4 TO-39 T2300D TO-39
BTU0650 stud T641 1 stud BTX0530 ISOstud T4120D ISOstud low profile
BTU0660 stud T641 1 stud '

BTX0540 ISOstud T4120D ISOstud
41
M
D
B B B

(IndustryType to Equivalent RCA Type)
TRIACS (CONT'D)
L4001M5 TO-39 T2301D TO-39 MAC- 37-7 press-fit T6401M press-fit PT410 press-fit 2N5568 press-fit
low profile MAC-38-1 stud T6411B stud PT415 press-fit 2N5572 press-fit
L4001M7 TO-39 T2302D TO-39 MAC-38-2 stud T641 1 stud
PT425 press-fit T6401D press-fit
low profile MAC-38-3 stud T6411B stud
PT430 press-fit T6401D press-fit
L4001M9 TO-39 2N5756 TO-5 MAC-38-4 stud T6411B stud
PT440 press-fit 2N5442 press-fit
low profile MAC-38-5 stud T6411D stud
PT510
T6411D
press-fit T4101M press-fit
MAC-1-1 Case 85 2N5567 press-fit MAC-38-6 stud stud
PT515 press-fit T4100M press-fit
MAC- 1-2 Case 85 2N5567 press-fit MAC-38-7 stud T6411M stud
MAC- 1-3 Case 85 2N5567 press-fit MAC92A-1 TO-92 T2301 F TO-5
MAC- 1-4 Case 85 2N5567 press-fit MAC92A-2 TO-92 T2301A TO-5
MAC- 1-5 Case 85 2N5568 press-fit MAC92A-3 TO-92 T2301A TO-5
MAC- 1-6 Case 85 2N5568 press-fit MAC92A-4 TO-92 T2301B TO-5 PT615 press-fit T4100M press-fit
MAC- 1-7 Case 85 T4101M press-fit MAC92A-5 TO-92 T2301D TO-5 PT625 press-fit T6401M press-fjt
MAC- 1-8 Case 85 T4101M press-fit MAC92A-6 TO-92 T2301D TO-5 PT630 press-fit T6401M press-fit
MAC-2-1 Case 86 2N5569 stud MAC93A-1 TO-92 T2301 F TO-5
MAC-2-2 Q2001 ms:2 TO-5 T2302B TO-5
Case 86 2N5569 stud MAC93A-2 TO-92 T2301A TO-5 Q2001M2 TO-5 2N5755 TO-5
MAC-2-3 Case 86 2N5569 stud MAC93A-3 TO-92 T2301A TO-5 Q2003P TO-5 T2800B TO-5
MAC-5-1 stud 2N5569 stud MAC93A-4 TO-92 T2301 B TO-5 Q2004 ISOstud T4120B ISOstud
MAC-5-2 stud 2N5569 stud MAC94A-1 TO-92 T2301F TO-5 Q2006L4 ISO T2850B ISO
MAC-5-3 stud 2N5569 stud MAC94A-2 TO-92 T2301A TO-5 TO-220 TO-220
MAC-5-4 stud 2N5569 stud MAC94A-3 TO-92 T2301A TO-5 Q2008 ISOstud T4121B ISOstud
MAC-5-5 stud 2N5570 stud MAC94A-4 TO-92 T2301B TO-5 Q2010 ISOstud T4121B ISOstud
MAC-5-6 stud 2N5570 stud MAC40688 ISOstud T6420B ISOstud Q2015 ISOstud T4120B ISOstud
MAC-5-7 stud T4111M stud MAC40689 ISOstud T6420D ISOstud Q2025 ISOstud T6421 ISOstud
MAC-5-8 stud T4111M stud MAC40690 ISOstud T6420M ISOstud Q2040 ISOstud T6420B ISOstud
MAC-10-1 Case 90 T2800B TO-220 MAC40797 press-fit T4100M press-fit Q4001MS2TO-5 T2302D TO-5
MAC- 10-2 Case 90 T2800B TO-220 MAC40798stud T4110M stud Q4001M2 TO-5 2N5756 TO-5
MAC- 10-3 Case 90 T2800B TO-220 PT06 press-fit 2N5567 press-fit Q4003L4 ISO T2850D ISO
MAC- 10-4 Case 90 T2800B TO-220 PT08 press-fit 2N5567 press-fit TO-220 TO-220
MAC- 10-5 Case 90 T2800C TO-220 PT10 press-fit 2N5567 press-fit Q4004 ISOstud T4121D ISOstud
MAC- 10-6 Case 90 T2800D TO-220 PT15 press-fit 2N5567 press-fit Q4004L4 ISO T2850D ISO
MAC-10-7 Case 90 T2800E TO-220 PT16 press-fit 2N5567 press-fit TO-220 TO-220
MAC- 10-8 Case 90 T2800M TO-220 PT18 press-fit 2N5567 press-fit Q4006 ISOstud T4121D ISOstud
MAC-11-1 Case 90 T2802B TO-220 PT025 press-fit T6401B press-fit Q4006L4 ISO T2850D ISO
MAC-11-2 Case 90 T2802B TO-220 PT026 press-fit 2N5867 press-fit
TO-220 TO-220
MAC-11-3 Case 90 T2802B TO-220 PT028 press-fit 2N6567 press-fit
Q4008 ISOstud T4121D ISOstud
MAC-11-4 Case 90 T2802B TO-220 PTO30 press-fit T6401B press-fit
MAC-11-5 Case 90 T2802C TO-220 PT036 press-fit 2N5568 press-fit
MAC-11-6 Case 90 T2802D TO-220 PT038 press-fit 2N5568 press-fit
MAC- 11 -7 Case 90 T2802E TO-220 PTO40 press-fit 2N5441 press-fit
MAC-11-8 Case 90 T2802M TO-220 PT046 press-fit 2N5568 press-fit
Q5006L4 ISO T2850D ISO
MAC-35-1 T6401B PT048 press-fit 2N5568 press-fit
press-fit press-fit TO-220 TO-220
MAC-35-2 T6401
press-fit press-fit Q5008 ISOstud T4121M ISOstud
MAC-35-3 T6401 PT058 press-fit T4101M press-fit
MAC-35-4 T6401B PT066 press-fit T4101M press-fit
MAC-35-5 press-fit T6401 press-fit PT068 press-fit T4101M press-fit
Q5025 ISOstud T6421M ISOstud
MAC-35-6 PT110 press-fit 2N5567 press-fit
press-fit T6401 press-fit Q5040 ISOstud T6420M ISOstud
MAC-35-7 press-fit T6401M press-fit Q6008 ISOstud T4121M ISOstud
PT125 press-fit T6401 B press-fit
MAC-36-1 stud T641 1 stud Q6010 ISOstud T4121M ISOstud
MAC-36-2 stud T641 1 stud
PT130 press-fit T6401B press-fit
MAC-36-3 stud T641 1 stud PT140 press-fit 2N5441 press-fit
MAC-36-5 stud T641
Q8025 ISOstud T6420N ISOstud
1 stud
MAC-36-6 stud T6411D stud
Q8040 ISOstud T6420N ISOstud
SC35A stud 2N5569 stud
MAC-37-1 press-fit T6401B press-fit PT240 press-fit 2N5441 press-fit SC35B stud 2N5569 stud
MAC-37-2 press-fit T6401B press-fit
PT310 press-fit 2N5568 press-fit SC35D stud 2N5570 stud
MAC-37-3 press-fit T6401 press-fit
PT315 press-fit 2N5572 press-fit SC35F stud 2N5569 stud
PT325 press-fit T6401D press-fit SC36A press-fit 2N5567 press-fit
PT330 press-fit T6401D press-fit SC36B press-fit 2N5567 press-fit
MAC-37-6 press -fit T6401 press-fit PT340 press-fit 2N5442 press-fit SC36D press-fit 2N5568 press-fit
42
M
D
B
B D
B M

TR ACS (CONT'D)
I

SC36F 2N5567
press-fit press-fit SC61B12 press-fit T6401B press-fit SC245E stud T4111M stud
SC40A stud 2N5569 stud SC61B13 press-fit T6401B press-fit SC245E2 ISOstud T4121M ISOstud
SC40B stud 2 N 5569 stud SC61B14 press-fit T6404B press-fit SC245E12 stud T4111M stud
SC40B2 ISOstud T4121B ISOstud SC61D press-fit T6401D press-fit SC245E13 stud T4111M stud
SC61D12 press-fit T6401D press-fit SC245E22 ISOstud T4121M ISOstud
SC40D stud 2N5570 stud
SC40D2 ISOstud T4121D ISOstud SC61D13 press-fit T6401D press-fit SC245E23 ISOstud T4121M ISOstud
SC40E stud T4111M stud SC61D14 press-fit T6404D press-fit SC246B press-fit 2N5567 press-fit
SC40E2 ISOstud T4121M ISOstud SC61E press-fit T6401M press-fit SC246B12 press-fit 2N5567 press-fit
SC40F stud 2N5569 stud SC61E12 press-fit T6401M press-fit SC246B13 press-fit 2N5567 press-fit
SC61E13 press-fit T6401M press-fit SC246B14 press-fit T4105B press-fit

SC41A press-fit 2N5567 press-fit
SC246D press-fit 2N5568
SC136A TO-202 2N5754 TO-5 press-fit
SC41B press-fit 2N5567 press-fit
SC246D12 press-fit 2N5568
SC136B TO-202 2N5755 TO-5 press-fit
SC41D press-fit 2N5568 press-fit SC246D13 press-fit 2N5568 press-fit
SC136D TO-202 2N5756 TO-5
SC41E press-fit T4101M press-fit SC246D14 press-fit T4105D press-fit
SC141B TO-220 T2800B TO-220
SC41F press-fit 2N5567 press-fit SC246E press-fit T4101M press-fit
SC141D TO-220 T2800D TO-220
SC45A stud 2N5569 stud
SC141E TO-220 T2800E TO-220 SC246E12 press-fit T4101M press-fit
SC45B stud 2N5569 stud
SC141M TO-220 T2800M TO-220 SC246E13 press-fit T4101M press-fit
SC45B2 ISOstud T4121B ISOstud SC250B stud 2N5573 stud
SC146B TO-220 T2800B TO-220
SC45D stud 2N5570 stud SC250B2 ISOstud T4120B ISOstud
SC146D TO-220 T2800D TO-220
SC45D2 ISOstud T4121D ISOstud SC250B12 stud 2N5573 stud
SC146E TO-220 T2800E TO-220
SC45E stud T4111M stud
SC146M TO-220 T2800M TO-220 SC250B13 stud 2N5573 stud
SC45E2 ISOstud T4121M ISOstud
2N5569 SC250B14 stud T4113B stud
SC240B stud stud
SC45F stud 2N5569 stud SC250B22 ISOstud T4120B ISOstud
2N5567 SC240B2 ISOstud T4121B ISOstud
SC46A press-fit press-fit
press-fit 2N5567
SC240B12 stud 2N5569 stud SC250D stud 2N5574 stud
SC46B press-fit
SC240B13 stud 2N5569 stud SC250D2 ISOstud T4120D ISOstud
SC46D press-fit 2N5568 press-fit
SC240B22 ISOstud T4121B ISOstud SC250D12 stud 2N5574 stud
SC46E press-fit T4101M press-fit
SC240B23 ISOstud T4121B ISOstud SC250D13 stud 2N5574 stud
SC46F press-fit 2N5567 press-fit
SC50A stud 2N5573 stud SC240D stud 2N5570 stud SC250D14 stud T4113D stud
2N5573 SC240D2 ISOstud T4121D ISOstud SC250D22 ISOstud T4120D ISOstud
SC50B stud stud
SC240D12 stud 2N5570 stud SC250E stud T4110M stud
SC50B2 ISOstud T4120B ISOstud
SC240D13 stud 2N5570 stud
SC50D stud 2N5574 stud
SC240D22 ISOstud T4121D ISOstud SC250E12 stud T4110M stud
SC50D2 ISOstud T4120D ISOstud
2N5573 SC240D23 ISOstud T4121D ISOstud SC250E13 stud T4110M stud
SC50E stud stud
T4110M stud SC240E stud T4111M stud SC250E22 ISOstud T4120M ISOstud
SC240E2 ISOstud T4121M ISOstud SC251B press-fit 2N5571 press-fit
T4111M
SC240E12 stud stud
SC251B12 press-fit 2N5571 press-fit
SC50F stud 2N5573 stud
T4111M
SC240E13 stud stud
SC251B13 press-fit 2N5571 press-fit
SC51A press-fit 2N5571 press-fit
press-fit 2N5571
SC240E22 ISOstud T4121M ISOstud SC251B14 press-fit T4103B press-fit
SC51B press-fit
press-fit 2N5572
SC240E23 ISOstud T4121M ISOstud SC251D press-fit 2N5572 press-fit
SC51D press-fit
press-fit 2N5567
SC241 press-fit SC251D12 press-fit 2N5572 press-fit
SC51E press-fit T4100M press-fit SC241B12 press-fit 2N5567 press -fit
SC251D13 press-fit 2N5572 press-fit
SC51F press-fit 2N5571 press-fit SC241B13 press-fit 2N5567 press-fit
SC251D14 press-fit T4103D press-fit
SC60B stud T641 1 stud
press-fit 2N5568
SC241 press-fit
SC251E press-fit T4100M press-fit
SC241D12 press-fit 2N5568 press-fit SC251E12 press-fit T4100M press-fit
SC60B12 stud T641 1 stud
SC241D13 press-fit 2N5568 press-fit SC251E13 press-fit T4100M press-fit
SC60B13 stud T641 1 stud SC241E press-fit T4101M press-fit
2N5569
SPT06 stud stud
SC60B14 stud T6414B stud SC241E12 press-fit T4101M press-fit
SPT08 stud 2N5569 stud
SC241E13 press-fit T4101M press-fit SPT10 stud 2N5569 stud
SC60B23 ISOstud T6421B ISOstud SC245B stud 2N5569 stud SPT15 stud 2N5573 stud
SC60D stud T641 1 stud
SC245B2 ISOstud T4121B ISOstud SPT16 stud 2N5569 stud
SC60D2 ISOstud T6421D ISOstud SC245B12 stud 2N5569 stud SPT18 stud 2N5569 stud
SC60D12 stud T641 1 stud SC245B13 stud 2N5569 stud T641 1 B
SPT025 stud stud
SC60D13 stud T6411D stud
SC245B14 stud T4115B stud SPT030 stud T641 1 B stud
SC60D14 stud T6414D stud
SC60D22 ISOstud T6421 ISOstud
SC60D23 ISOstud T6421D ISOstud SC245D stud 2N5570 stud
SC60E stud T641 1 stud SC245D2 ISOstud T4121D ISOstud SPT38 stud 2N5570 stud
SC245D12 stud 2N5570 stud SPT40 stud 2N5444 stud
SC60E12 stud T6411M stud
SC245D13 stud 2N5570 stud SPT46 stud 2N5570 stud
SC60E13 stud T6411M stud
SC245D14 stud T4115D stud SPT48 stud 2N5570 stud
SC60E22 ISOstud T6421M ISOstud SC245D22 ISOstud T4121D ISOstud SPT56 stud T41 1 1 stud
SC60E23 ISOstud T6421M ISOstud SC245D23 ISOstud T4121D ISOstud SPT58 stud T4111M stud
SC61B press-fit T6401 press-fit
43
TRIACS (CONT'D)
SPT68 stud T4111Mstud TA6-224-400 TO-220 T2802D TO-220 TDAL223B TO-39 T2302D TO-39
SPT110 stud 2N5569 stud TA6-224-600 TO-220 T2802M TO-220 TDAL113S TO-39 T2300B TO-39
SPT115 stud 2N5573 stud TA6-225-200 TO-220 T2800B TO-220 TDAL2235 TO-39 T2300D TO-39
SPT125 stud T6411Bstud TA6-225-400 TO-220 T2800D TO-220 TJAL602D stud T8411B stud
SPT130 stud TA6-225-600 TO-220 T2800M TO-220
T641 1 B stud TJAL604D stud T8411D stud
SPT140 stud 2N5444 stud TA6-240-200 TO-220 T2850B TO-220
TA6-240-400 TO-220 T2850D TO-220 TJAL606Dstud T8411M stud
TRAL1 1 10D TO-48 2N5569 stud
SPT215 TA6-24 1-200 TO-220 T2850D TO-220
stud 2N5573 stud
TA6-245-200 TO-220 T2850B TO-220 TRAL1 1 15D TO-48 2N5573 stud
SPT225 stud T6411Bstud TA6- 24 5-400 TO-220 T2850D TO-220 TR AL1 1 25D TO-48 T641 1 stud
SPT230 stud T6411Bstud TA6-246-200 TO-220 T2850B TO-220 TRAL1130D ISOstud T6421 B ISOstud
SPT240 stud 2N5444 stud TA6- 246-400 TO-220 T2850D TO-220 TRAL1140D ISOstud T6420B ISOstud
SPT310 stud 2N5570 stud TA6-255-200 TO-220 T6000B TO-220 TRAL2210D TO-48 2N5570 stud
SPT315 stud 2N5574 stud TA6-255-400 TO-220 T6000D TO-220 TRAL2215D TO-48 2N5574 stud
SPT325 stud T6411Dstud TA6-255-600 TO-220 T6000M TO-220 TR AL2225D TO-48 T641 1 stud
SPT330 stud T641 1 D stud TA6-255A-200 TO-220 T6000B TO-220 TRAL2230D ISOstud T6421D ISOstud
SPT340 stud 2N5445 stud TA6-255A-200 TO-220 T6000D TO-220 TRAL2240D ISOstud T6420D ISOstud
SPT410 stud 2N5570 stud TA6-255A-200 TO-220 T6000M TO-220 TX01A10 TO-66 T2700A TO-66
SPT415 stud 2N5574 stud TA6-260-200 TO-66 T2700B TO-66
TXC01A20 TO-66 T2700B TO-66
SPT425 T641 1 D stud TA6- 260-400 TO-66 T2700D TO-66
stud TXC0 1 A40 TO-66 T2700 D TO-66
SPT430 stud T6411D stud TA6-26 1-200 TO-66 T2700B TO-66
TXC01 B10 TO-66 T2700A TO-66
SPT440 stud 2N5445 stud TA6-26 1-400 TO-66 T2700D TO-66
TXC01B20 TO-66 T2700B TO-66
SPT510 stud T4111Mstud TA6-265-200 TO-66 T4700B TO-66
TXC0 1 B40 TO-66 T2700 D TO-66
SPT515 stud T4110Mstud TA6-265-400 TO-66 T4700D TO-66
TA6-266-200 TO-66 T4700B TO-66 TX CO 1C10 TO-66 T2700A TO-66
SPT525 stud T641 1 M stud
TA6- 266-400 TO-66 T4700D TO-66 TX CO 1C20 TO-66 T2700B TO-66
SPT530 stud T6411M stud TXC01C40 TO-66 T2700D TO-66
TA6-280-200 TO-220 T6000B TO-220
SPT540 stud 2N5446 stud TXC01D10 TO-66 T2700A TO-66
TA6-280-400 TO-220 T6000D TO-220
SPT610 stud T4111M stud TXC01D20 TO-66 T2700B TO-66
TA6-280-600 TO-220 T6000M TO-220
SPT615 stud T4110M stud
TIC20 press-fit 2N5567 press-fit TXC01D40 TO-66 T2700D TO-66
SPT625 stud T6411M stud TIC21 press-fit 2N5568 press-fit TXC01E10 TO-66 T2700A TO-66
SPT630 stud T6411M stud stud 2N5569 stud TXC01E20 TO-66 T2700B TO-66
TIC22
SPT640 stud 2N5446 stud stud 2N5570 stud TXC01 E40 TO-66 T2700D TO-66
TIC23
TA6136 TO-202 T2322D TO-202
TIC226B TO-220 T2800B TO-220 TXC01F10 TO-66 T2700A TO-66
TA6-200-100 TO-39 T2302A TO-39 TO-220 T2800D TO-220 TXC01 F20 TO-66 T2700B TO-66
TIC226D
TA6-201-100 TO-39 T2303A TO-39 TO-220 T2800B TO-220 TXC01 F40 TO-66 T2700D TO-66
TIC236B
TA6-200-200 TO-39 T2302B TO-39
TIC236D TO-220 T2800D TO-220 TXC03A10 MU22 T2500A TO-220
TA6-201-200 TO-39 T2303B TO-39
TA6-200-400 TO-39 T2302D TO-39 TIC250B press-fit T6401 B press-fit TXC03A20 MU22 T2500B TO-220
TA6-202-100 TO-39 T2302A TO-39 TIC250D press-fit T6401D press-fit TXC03A40 MU22 T2500D TO-220
TA6-202A-100 TO-39 T2302A TO-39 TIC250E press-fit T6401M press-fit TXC03A50 MU22 T2500E TO-220
TA6-202-200 TO-39 T2302B TO-39 TIC250M press-fit T6401M press-fit TXC03B10 MU22 T2500A TO-220
TA6-202A-200 TO-39 T2302B TO-39 TIC252B stud T6411B stud TXC03B20 MU22 T2500B TO-220
TA6-202-400 TO-39 T2302D TO-39 TIC252D stud T641 1 D stud TXC03B40 MU22 T2500D TO-220
TA6-202A-400 TO-39 T2302D TO-39 TIC252E stud T641 1 M stud TXC03B50 MU22 T2500E TO-220
TA6-203-100 TO-39 T2301ATO-39 TIC252M stud T6411Mstud TXC03C10 MU22 T2500A TO-220
TA6-203A-100 TO-39 T2301ATO-39 TIC260B press-fit T6401B press-fit TXC03C20 MU22 T2500B TO-220
TA6-203-200 TO-39 T2301B TO-39 TIC260D press-fit T6401D press-fit TXC03C40 MU22 T2500D TO-220
TA6-203A-200 TO-39 T2301 B TO-39 TIC260E press-fit T6401 M press-fit TXC03C50 MU22 T2500E TO-220
TA6-203-400 TO-39 T2301 D TO-39 TIC260M press-fit T6401M press-fit TXC03D10 MU22 T2500A TO-220
TA6-203A-400 TO-39 T2301D TO-39 TIC262B stud T6411B stud TXC03D20 MU22 T2500B TO-220
TA6-204-100 TO-39 T2300A TO-39 TIC262D stud T641 1 D stud TXC03D40 MU22 T2500D TO-220
TA6-204A-100 TO-39 T2300A TO-39 TIC262E stud T6411Mstud TXC03D50 MU22 T2500E TO-220
TA6-204-200 TO-39 T2300B TO-39 TIC262M stud T6411Mstud TXC03E10 MU22 T2500A TO-220
TA6-204A-200 TO-39 T2300B TO-39 TIC270B press-fit 2N5441 press-fit TXC03E20 MU22 T2500B TO-220
TA6-204-400 TO-39 T2300D TO-39 TIC270D press-fit 2N5442 press-fit
TA6-204A-400 TO-39 T2300D TO-39 TXC03E40 MU22 T2500D TO-220
TIC270E press-fit 2N5443 press-fit TXC03E50 MU22 T2500E TO-220
TA6-205-100 TO-39 T2303A TO-39
TA205-200 TO-39 T2303B TO-39
TIC270M press-fit 2N5443 press-fit TXC03F10MU22 T2500A TO-220
TIC272B stud 2N5444 stud TXC03F20 MU22 T2500B TO-220
TA6-205-400 TO-39 T2303D TO-39
TA6-206-100 TO-39 T2302A TO-39 TIC272D stud 2N5445 stud TXC03F40 MU22 T2500D TO-220
TIC272E stud 2N5446 stud TXC03F50 MU22 T2500E TO-220
TA6-206-200 TO-39 T2302B TO-39
TIC272M stud 2N5446 stud TXD98A20 stud 2N5573 stud
TA6-206-400 TO-39 T2302D TO-39
TA6-220-200 TO-220 T2500B TO-220 TDAL113A TO-39 2N5754 TO-39 TXD98A40 stud 2N5574 stud
TA6-220-400 TO-220 T2500D TO-220 TDAL223A TO-39 2N5756 TO-39 TXD98A50 stud T4110M stud
TA6-224-200 TO-220 T2800B TO-220 TDAL113B TO-39 T2302B TO-39 TXD99A20 stud 2N5569 stud
44.
D
BBD

TRIACS (CONT'D)
TXD99A40 stud 2N5570 stud 40663 stud T6411D stua 40771 TO-5 T2305B TO-5
TXD99A50stud T4111M stud 40668 TO-220AB T2800B TO-220AB 40772 TO-5 T2305D TO-5
TXE99A20 stud T641 1 stud 40669 TO-220AB T2800D TO-220AB 40775 press-fit T4105B press-fit
TXE99A40 stud T641 1 stud 40670 TO-220AB T2800M TO-220AB 40776 press-fit T4105D press-fit
TXE99A50stud T6411M stud 40671 press-fit T6401M press-fit 40777 stud T4115B stud
40672 stud T6411M stud 40778 stud T4115D stud
TYAL113B TO-220 T2500B TO-220
40684 TO-5 T2313A TO-5 40779 press-fit T4104B press-fit
TYAL113C TO-220 T2500B TO-220
40685 TO-5 T2313B TO-5 40780 press-fit T4104D press-fit
TYAL1 13M TO-220 T2801 TO-220
40686 TO-5 T2313D TO-5 40781 stud T4114B stud
TYAL116B TO-220 T2500B TO-220
40687 TO-5 T2313M TO-5 40782 stud T4114D stud
TYAL116C TO-220 T2500B TO-220
40688 ISOstud T6420B ISOstud 40783 press-fit T4103B press-fit
TYAL1 1 6M TO-220 T2801 TO-220 40784 T4103D press-fit
40689 ISOstud T6420D ISOstud press-fit
TYAL118B TO-220 T2800B TO-220 40785 stud T4113B stud
40690 ISOstud T6420M ISOstud
TYAL118C TO-220 T2800B TO-220
T2301 B TO-5 40786 stud T4113D stud
40691 TO-5
TYAL118M TO-220 T2802B TO-220
40692 TO-5 T2301D TO-5 40787 press-fit T6405B press-fit
TYAL223B TO-220 T2500D TO-220
40693 TO-5 T2316A TO-5 40788 press-fit T6405D press-fit
TYAL223C TO-220 T2500D TO-220 40694 TO-5 T2316B TO-5 40789 stud T6415B stud
TYAL223M TO-220 T2801 D TO-220 40695 TO-5 T2316D TO-5 40790 stud T6415D stud
TYAL226B TO-220 T2500D TO-220 40696 TO-5 T2306A TO-5 40791 press-fit T6404D press-fit
TYAL226C TO-220 T2500D TO-220 40697 TO-5 T2306B TO-5 40793 stud T6414B stud
TYAL226M TO-220 T2801 TO-220 40698 TO-5 T2306D TO-5 40794 stud T6414D stud
TYAL228B TO-220 T2800D TO-220 40699 press-fit T6406B press-fit 40795 press-fit T4101M press-fit
TYAL228C TO-220 T2800D TO-220 40700 press-fit T6406D press-fit 40796 stud T4111M stud
TYAL228M TO-220 T2802D TO-220 40701 press-fit T6406M press-fit 40797 press-fit T4100M press-fit
TYAL1 1 10B TO-220 T2800B TO-220 40702 stud T6416B stud 40798 stud T4110M stud
TYAL1 1 10C TO-220 T2800B TO-220 40703 stud T6416D stud 40799 ISOstud T4121B ISOstud
40704 stud T6416M stud 40800 ISOstud T4121D ISOstud
TYAL1 1 10M TO-220 T2802B TO-220
40705 press-fit T6407M press-fit 40801 ISOstud T4121M ISOstud
TYAL221.0B TO-220 T2800D TO-220
40706 press-fit T6407D press-fit 40802 ISOstud T4120B ISOstud
TYAL2210C TO-220 T2800D TO-220
T4120D ISOstud
40709 T6407M 40803 ISOstud
TYAL2210M TO-220 T2802D TO-220 press-fit press-fit
T4120M ISOstud
40711 press-fit T4106B press-fit 40804 ISOstud
40429 TO-66 T2700B TO-66 40805 ISOstud T6421B ISOstud
40712 press-fit T4106D press-fit
40430 TO-66 T2700D TO-66 40806 ISOstud T6421D ISOstud
40713 stud T4116B stud
40502 TO-66 T2710B TO-66 40807 ISOstud T6421M ISOstud
40503 TO-66 T2710D TO-66 40714 stud T4116D stud
40715 TO-66 T4706B TO-66 40900 TO-220AB T2850A TO-220AB
40525 TO-5 T2300A TO-5 40901 TO-220AB T2850B TO-220AB
40526 TO-5 T2300B TO-5 40716 TO-66 T4706D TO-66
40717 press-fit T4107B press-fit 40902 TO-220AB T2850D TO-220AB
40527 TO-5 T2300D TO-5 40927 ISOstud T6420N ISOstud
40528 TO-5 T2302A TO-5 40718 press-fit T4107D press-fit
40719 stud T4117B stud 41014 TO-220AB T2500B TO-220AB
40529 TO-5 T2302B TO-5
41015 TO-220AB T2500D TO-220AB
40530 TO-5 T2302D TO-5 40720 stud T4117D stud
T2310A TO-5 40721 TO-220AB T2806B TO-220AB

40531 TO-5
T2310B TO-5 40722 TO-220AB T2806D TO-220AB
40532 TO-5
40727 TO-66 T2706B TO-66
40533 TO-5 T2310D TO-5
T2312A TO-5 40728 TO-66 T2706D TO-66
40534 TO-5
40729 TO-66 T2716B TO-66
40535 TO-5 T2312B TO-5
40730 TO-66 T2716D TO-66
40536 TO-5 T2312D TO-5
40761 TO-5 T2311B TO-5
40575 TO-66 T4700B TO-66
40762 TO-5 T2311D TO-5
40576 TO-66 T4700D TO-66
T2301A TO-5
40766 TO-5
40660 press-fit T6401 press-fit
40767 TO-5 T2311A TO-5
40661 press-fit T6401 press-fit
40769 TO-5 T2304B TO-5
40662 stud T6411B stud
40770 TO-5 T2304D TO-5
45
Operating Considerations
Solid state devices are being designed into an increasing Thyristors," and JEDEC Standard RS282 "Standards for
variety of electronic equipment because of their high Silicon Rectifier Diodes and Stacks".
standards of reliability and performance. However, it is The metal shells of some solid state devices operate at the
essentia] that equipment designers be mindful of good collector voltage and for some rectifiers and thyristors at the
engineering practices in the use of these devices to achieve anode voltage. Therefore, consideration should be given to
the desired performance. the possibility of shock hazard if the shells are to operate at
This Note summarizes important operating recommen- voltages appreciably above or below ground potential. In
dations and precautions which should be followed in the general, in any application in which devices are operated at
interest of maintaining the high standards of performance of voltages which may be dangerous to personnel, suitable
solid state devices. precautionary measures should be taken to prevent direct
The ratings included in RCA Solid State Devices data contact with these devices.
bulletins are based on the Absolute Maximum Rating Devices should not be connected into or disconnected
System, which is defined by the following Industry Standard from circuits with the power on because high transient
(JEDEC) statement: voltages may cause permanent damage to the devices.
Absolute-Maximum Ratings are limiting values of opera-
ting and environmental conditions applicable to any electron
device of a specified type as defined by its published data, TESTING PRECAUTIONS
and should not be exceeded under the worst probable In common with many electronic components, solid-state
conditions. devices should be operated and tested in circuits which have
The device manufacturer chooses these values to provide reasonable values of current limiting resistance, or other
acceptable serviceability of the device, taking no responsi- forms of effective current overload protection. Failure to
bility for equipment variations, environmental variations, and observe these precautions can cause excessive internal heating
the effects of changes in operating conditions due to of the device resulting in destruction and/or possible
variations in device characteristics. shattering of the enclosure.
The equipment manufacturer should design so that
initially and throughout life nn absolute-maximum value for TRANSISTORS AND THYRISTORS
the intended service is exceeded with any device under the WITH FLEXIBLE LEADS
worst probable operating conditions with respect to supply- Flexible leads are usually soldered to the circuit elements.
voltage variation, equipment component variation, equip- It is desirable in all soldering operatings to provide some
ment control adjustment, load variation, signal variation, slack or an expansion elbow in each lead to prevent
environmental conditions, and variations in device charac- excessive tension on the leads. It is important during the
teristics. soldering operation to avoid excessive heat in order to
It is recommended that equipment manufacturers consult prevent possible damage to the devices. Some of the heat can
RCA whenever device applications involve unusual electrical, be absorbed if the flexible lead of the device is grasped
mechanical or environmental operating conditions. between the case and the soldering point with a pair of pliers.
GENERAL CONSIDERATIONS TRANSISTORS AND THYRISTORS

The design flexibility provided by these devices makes WITH MOUNTING FLANGES
possible their use in a broad range of applications and under The mounting flanges of JEDEC-type packages such as
many different operating conditions. When incorporating the TO-3 or TO-66 often serve as the collector or anode
these devices in equipment, therefore, designers should terminal. In such cases, it is essential that the mounting
anticipate the rare possibility of device failure and make which may be
flange be securely fastened to the heat sink,
certain that no safety hazard would result from such an the equipment chassis. Under no circumstances, however,
occurrence. should the mounting flange of a transistor be soldered
The small size of most solid state products provides directly to the heat sink or chassis because the heat of the
obvious advantages to the designers of electronic equipment. soldering operation could permanently damage the device.
However, it should be recognized that these compact devices Soldering is the preferred method for mounting thyristors;
usually provide only relatively small insulation area between see "Rectifiers and Thyristors," below. Devices which cannot
adjacent leads and the metal envelope. When these devices be soldered can be installed in commercially available
are used in moist or contaminated atmospheres, therefore, sockets. Electrical connections may also be made by
supplemental protection must be provided to prevent the soldering directly to the terminal pins. Such connections may
development of electrical conductive paths across the be soldered to the pins close to the pin seals provided care is
relatively small insulating surfaces. For specific information taken to conduct excessive heat away from the seals;
on voltage creepage, the user should consult references such otherwise the heat of the soldering operation could crack the
as the JEDEC Standard No. 7 "Suggested Standard on pin seals and damage the device.
46
During operation, the mounting-flange temperature is long-nosed pliers may be used. The pliers should hold the
higher than the ambient temperature by an amount which lead firmly between the bending point and the case, but
depends on the heat sink used. The heat sink must have should not touch the case.
sufficient thermal capacity to assure that the heat dissipated When the leads of an in-line plastic package are to be
in the heat sink itself does not raise the device mounting- formed, whether by use of long-nosed pliers or a special
flange temperature above the rated value. The heat sink or bending fixture, the following precautions must be observed
chassis may be connected to either the positive or negative to avoid internal damage to the device:
supply.
In many applications the chassis is connected to the 1. Restrain the lead between the bending point and the
voltage-supply terminal. If the recommended mounting plastic case to prevent relative movement between the
hardware shown in the data bulletin for the specific lead and the case.
solid-state device is not available, it is necessary to use either 2. When the bend is made in the plane of the lead
an anodized aluminum insulator having high thermal con- (spreading),bend only the narrow part of the lead.
ductivity or a mica insulator between the mounting-flange 3. When the bend is made in the plane perpendicular to that
and the chassis. If an insulating aluminum washer is required, of the leads, make the bend at least 1/8 inch from the
it should be drilled or punched to provide the two mounting plastic case.
holes for the terminal pins. The burrs should then be 4. Do not use a lead-bend radius of less than 1/16 inch.
removed from the washer and the washer anodized. To insure 5. Avoid repeated bending of leads.
that the anodized insulating layer is not destroyed during

mounting, it is necessary to remove the burrs from the holes The leads of the TO-220AB VERSAWATT in-line
in the chassis.
package are not designed to withstand excessive axial pull.
It is also important that an insulating bushing, such as Force in this direction greater than 4 pounds may result in
glass-filled nylon, be used between each mounting bolt and permanent damage to the device. If the mounting arrange-
the chassis to prevent a short circuit. However, the insulating ment tends to impose axial stress on the leads, some method
bushing should not exhibit shrinkage or softening under the of strain relief should be devised.
operating temperatures encountered. Otherwise the thermal
Wire wrapping of the leads is permissible, provided that
resistance at the interface between device and heat sink and the point
the lead is restrained between the plastic case
may increase as a result of decreasing pressure.
also allowed.The
of the wrapping. Soldering to the leads is
maximum soldering temperature, however, must not exceed

PLASTIC POWER TRANSISTORS AND THYRISTORS 275°C and must be applied for not more than 5 seconds at a
RCA power transistors and thyristors (SCR's and triacs)
distance not less than 1/8 inch from the plastic case. When
in molded-silicone-plastic packages are available in a wide
wires are used for connections, care should be exercised to
range of power-dissipation ratings and a variety of package assure that movement of the wire does not cause movement
configurations.The following paragraphs provide guidelines of the lead at the lead-to-plastic junctions.
for handling and mounting of these plastic-package devices,
The leads of RCA molded-plastic high-power packages
recommend forming of leads to meet specific mounting
are not designed to be reshaped. However, simple bending of
requirements, and describe various mounting arrangements,
the leads is permitted to change them from a standard
thermal considerations, and cleaning methods. This informa-
vertical to a standard horizontal configuration, or conversely.
tion is intended to augment the data on electrical character-
Bending of the- leads in this manner is restricted to three
istics, safe operating area, and performance capabilities in the
90-degree bends; repeated bendings should be avoided.
technical bulletin for each type of plastic-package transistor
or thyristor.
Mounting
Lead-Forming Techniques Recommended mounting arrangements and suggested
The leads of the RCA VERSAWATT in-line plastic hardward for the VERSAWATT package are given in the data
packages can be formed to a custom shape, provided they are bulletins for specific devices and in RCA Application Note
not indiscriminately twisted or bent. Although these leads AN-4142.* When the package is fastened to a heat sink, a
can be formed, they are not flexible in the general sense, nor rectangular washer (RCA Part No. NR231 A) is recommended
are they sufficiently rigid for unrestrained wire wrapping to minimize distortion of the mounting flange. Excessive
Before an attempt is made to form the leads of an in-line damage to the package.
distortion of the flange could cause
package to meet the requirements of a specific application, The washer is particularly important when the size of the
the desired lead configuration should be determined, and a mounting hole exceeds 0.140 inch (6-32 clearance). Larger
lead-bending fixture should be designed and constructed. The holes are needed to accommodate insulating bushings;
use of a properly designed fixture for this operation however, the holes should not be larger than necessary to
eliminates the need for repeated lead bending. When the use provide hardware clearance and, in any case, should not
of a special bending fixture is not practical, a pair of exceed a diameter of 0.250 inch.
This Note is included in the Appendix to this DATABOOK.

47
Flange distortion is also possible il" excessive torque is the power dissipation be maintained below the level which
used during mounting. A maximum torque of <S inch-pounds would cause the junction temperature to rise above the
is specified. Care should be exercised to assure that the tool maximum rating. However, when the device is mounted on a
used to drive the mounting screw never comes in contact heat sink, care must be taken to assure that all portions of
with the plastic body during the driving operation. Such the thermal circuit are considered.
contact can result in damage to the plastic body and internal To assure efficient heat transfer from case to heat sink
device connections. An excellent method of avoiding this when mounting RCA molded-plastic solid state power
problem is to use a spacer or combination spacer-isolating devices, the following special precautions should be
bushing which raises the screw head or nut above the top observed:
surface of the plastic body. The material used for such a
spacer or spacer-isolating bushing should, of course, be 1. Mounting torque should be between 4 and 8 inch-
carefully selected to avoid "cold How" and .consequent pounds.
reduction in mounting force. Suggested materials for these 2. The mounting holes should be kept as small as possible.
bushings are diallphtalate, fiberglass-filled nylon, or 3. Holes should be drilled or punched clean with no burrs or
fiberglass-filled polycarbonate. Unfilled nylon should be ridges, and chamfered to a maximum radius of 0.010
avoided. inch.
Modification of the flange can also result in flange 4. The mounting surface should be flat within 0.002
distortion and should not be attempted. The package should inch/inch.
not be soldered to the heat sink by use of lead-tin solder 5. Thermal grease (Dow Corning 340 or equivalent) should
because the heat required with this type of solder will cause always be used on both sides of the insulating washer if
the junction temperature of the device to become excessively orie is employed. The bleed rate of the thermal-grease
high. compound should be such that it does not exceed 0.5
The TO-220AA plastic package can be mounted in per cent after 24 hours at 200°C.
commercially available TO-66 sockets, such as UID 6. Thin insulating washers should be used. (Thickness of
Electronics Corp. Socket No. PTS-4 or equivalent. For
factory-supplied mica washers range from 2 to 4 mils).
testing purposes, the TO-220AB in-line package can be
7. A lock washer or torque washer, made of material having
mounted in a Jetron Socket No. DC74-I04 or equivalent.
sufficient creep strength, should be used to prevent
Regardless of the mounting method, the following
degradation of heat sink efficiency during life.
precautions should be taken:
A wide variety of solvents is available for degreasingand
1 . Use appropriate hardware. flux removal. The usual practice is to submerge components
2. Always fasten the package to the heat sink before the in a solvent bath for a specified time. However, from a
leads are soldered to fixed terminals. reliability stand point it is extremely important that the
3 . Never allow the mounting tool to come in contact with solvent, together with other chemicals in the solder-cleaning
the plastic case. system (such as flux and solder covers), do not adversely
4. Never exceed a torque of 8 inch-pounds. affect the life of the component. This consideration applies
5. Avoid oversize mounting holes. to all non-hermetic and molded-plastic components.
6. Provide strain relief if there is any probability that axial It is, of course, impractical to evaluate the effect on
stress will be applied to the leads. long-term device life of all cleaning solvents, which are
7. Use insulating bushings to prevent hot-creep problems. marketed with numerous additives under a variety of brand
Such bushings should be made of diallphthalate, fiber- names. These solvents can, however, be classified with
glass-filled nylon, or fiberglass-filled polycarbonate. respect to their component parts as either acceptable or
The maximum allowable power dissipation in a solid unacceptable. Chlorinated solvents tend to dissolve the outer
state device is limited by the junction temperature. An package and, therefore, make operation in a humid atmos-
important factor in assuring that the
phere unreliable. Gasoline and other hydrocarbons cause the
junction temperature
remains below the specified maximum inner encapsulant to swell and damage the transistor. Alcohol
value is the ability of
the associated thermal circuit to conduct heat is an acceptable solvent. Examples of specific, acceptable
away from the
device.
alcohols are isopropanol, methanol, and special denatured
alcohols, such as SDA1 SDA30, SDA34, and SDA44.
,
When a solid state device is operated in free air, without a Under certain conditions, dimethyl silicone fluids may
heat sink, the steady-state thermal circuit is defined by the react chemically with the encapsulant of plastic devices and
junction-to-free-air thermal resistance given in the published cause damage to the package. These fluids do not cause
data for the device. Thermal considerations require that a damage when they are contained in materials such as thermal
free flow of air around the device is always present and that compounds. These fluids, however, are unacceptable for use
48
. 1
as baths or encapsulants for plastic-package devices. In original tarnish-preventive containers and wrappings until
addition, plastic-package devices should not be used or stored ready for use. Lead solderability is retarded by the presence
in environments that contain significant amounts of dimethyl of silver tarnish; the tarnish can be removed with a silver
silicone fluid. cleaning solution, such as thiourea.

Care must also be used in the selection of fluxes for lead The ceramic bodies of many rf devices contain beryllium
soldering. Rosin or activated rosin fluxes are recommended, oxide as a major ingredient. These portions of the transistors
while organic or acid fluxes are not. Examples of acceptable should not be crushed, ground, or abraded in any way
fluxes are: because the dust created could be hazardous if inhaled.
1 Alpha Reliaros No. 320-33
Operating
2. Alpha Reliaros No. 346
3. Alpha Reliaros No. 7 1 Forward-Biased Operation. For Class A or AB operation,
4. Alpha Reliafoam No. 807 the allowable quiescent bias point is determined by reference
to the infrared safe-area curve in the appropriate data
5. Alpha Reliafoam No. 809
bulletin. This curve depicts the safe current/voltage combina-
6. Alpha Reliafoam No. 81 1-13
tions for extended continuous operation.
7. Alpha Reliafoam No. 815-35
8. KesterNo. 44 Load VSWR. Excessive collector load or tuning mismatch
If the completed assembly is to be encapsulated, the can cause device destruction by over-dissipation or secondary
on the molded-plastic transistor must be studied from breakdown. Mismatch capability is generally included on the
effect
data bulletins for the more recent rf transistors.
both a chemical and a physical standpoint.
See RCA RF Power Transitor Manual, Technical Series
RMF-430, pp 39-41, for additional information concerning
RECTIFIERS AND THYRISTORS
the handling and mounting of rf power transistors.
A surge-limiting impedance should always be used in
series with silicon rectifiers and thyristors. The impedance

value must be sufficient to limit the surge current to the
SOLID STATE CHIPS
value specified under the maximum ratings. This impedance Solid state chips, unlike packaged devices, are non-
may be provided by the power transformer winding, or by an hermetic devices, normally fragile and small in physical size,
external resistor or choke. and therefore, require special handling considerations as

follows:
A method for mounting thyristors utilizing
very efficient
the "modified TO-5" package is to provide intimate contact 1. Chips must be stored under proper conditions to insure
between the heat sink and at least one half of the base of the that they are not subjected to a moist and/or contam-
device opposite the leads. This package can be mounted to inated atmosphere that could alter their electrical,
the heat sink mechanically with glue or an expoxy adhesive, physical, or mechanical characteristics. After the shipping
or by soldering, the most efficient method. container is opened, the chip must be stored under the
The use of a "self-jigging" arrangement and a solder following conditions:
preform is recommended. If each unit is soldered individ- A. Storage temperature, 40°C max.
ually, the heat source should be heldon the heat sink and the B. Relative humidity, 50% max.
solder on the unit. Heat should be applied only long enough C. Clean, dust-free environment.
to permit solder to flow freely. For more detailed thyristor 2. The user must exercise proper care when handling chips
mounting considerations, refer to Application Note AN3822, to prevent even the slightest physical damage to the chip.
"Thermal Considerations in Mounting of RCA Thyristors".
3. During mounting and lead bonding of chips the user must
use proper assembly techniques to obtain proper elec-
RF POWER TRANSISTORS
trical, thermal, and mechanical performance.
Mounting and Handling
Stripline rf devices should be mounted so that the leads 4. After the chip has been mounted and bonded, any
are not bent or pulled away from the stud (heat sink) side of necessary procedure must be followed by the user to
the device. When leads are formed, they should be supported insure that these non-hermetic chips are not subjected to
to avoid transmitting the bending or cutting stress to the moist or contaminated atmosphere which might cause
ceramic portion of the device. Excessive stresses may destroy the development of electrical conductive paths across the
the hermeticity of the package without displaying visible relatively small insulating surfaces. In addition, proper
damage. consideration must be given to the protection of these
Devices employing silver leads are susceptible to devices from other harmful environments which could
tarnishing; these parts should not be removed from the conceivably adversely affect their proper performance.
49
Terms and Symbols
General c ib common-base input capaci-
•c continuous collector current
tance 'CBO collector-cutoff current,
AQL acceptance quality level
c ob common-base output capaci- emitter open
CM cross modulation
tance 'ceo collector-cutoff current,
IMD intermodulation distortion
C bo open-circuit common-base base open
K post-radiation neutron-
output capacitance 'CER collector-cutoff current with
damage constant
E S/b reverse-bias second-break- specified resistance between
LTPD lot tolerance per cent
down energy base and e/nitter
defective
f base (alpha) cutoff frequency ces collector-cutoff current with
MTBF mean time between failures ab
emitter (beta) cutoff base-emitter junction short-
MTTF mean time to failure 'ae
frequency circuited
NF noise factor (or noise figure)
h FE dc forward-current transfer 'CEV collector-cutoff current with
PD device dissipation
specified voltage between
ratio
pps pulses per second
h fe common-emitter, small- base and emitter
P
r rr pulse repetition rate
signal, short-circuit, forward- 'CEX collector-cutoff current with
prt pulse recurrence time
PW current transfer ratio specified circuit between
RMS
R 0JA
pulse width
root mean square
thermal resistance, junction-
M magnitude of common-
emitter, small-signal, short-
•cm
base and emitter
peak collector current
circuit, forward-current lc<sat) collector current at which hpg,
to-ambient
transfer ratio Vg£(sat), VQ^(sat), and
R 0JC thermal resistance, junction-
f
hfe common-emitter, small- switching speeds are measured
to-case
signal, short-circuit forward- continuous emitter current
R 0JF thermal resistance, junction- •e
current transfer ratio cutoff emitter-cutoff current, collec-
to-flange 'ebo
frequency tor open
R 0JFA thermal resistance,
gain-bandwidth product peak emitter current
junction-to-free air •em
(unity-gain frequency for forward-bias, second-break-
r 6jhs thermal resistance, junction- 'S/b
devices in which gain roll off down collector current
to-heat sink
has a —1 slope) PG power gain
TA ambient temperature
conversion gain
TC case temperature PRT power rating test
^pb small-signal, common-base
THD total harmonic distortion
power gain Pt transistor dissipation at
Tj operating (junction) tempera- specified temperature

G PB large-signal, common-base
ture r base spreading resistance
power gain bb'
lead temperature during
G pe small-signal, common-emitter R BB base bias resistor
soldering
power gain
'bCc collector-to-base time constant
pulse duration
Gp E large-signal, common-emitter
R BE external base-to-emitter
storage temperature
stg power gain
resistance
efficiency
G VE wide-band voltage gain
RC collector resistor
conduction angle
h ib common-base, small-signal,
phase angle r
CE (sat) dc collector-to-emitter
short-circuit input im-
lead radius (for bending) saturation resistance
pedance
torque Re(h ie ) real part of common-emitter,
common-emitter, small-signal,
small-signal, short-circuit in-
device stud torque short-circuit input im-
put impedance
pedance
Rs collector-to-emitter saturation
''ob
common-base, small-signal,
resistance
open circuit output
clamped turn-off switching
Power Transistors admittance
*c
time of an inductive load
(C) collector-to-base charge- Vb common-base, small-signal,
*d delay time
generation constant (during open-circuit reverse-voltage
fall time
gamma exposure) transfer ratio
tOFF turn-off time (storage time +
continuous base current
Cb'c feedback capacitance fall time)
'BEV base-cutoff current with turn-on time (delay time +
Cc collector-to-case l
ON
specified voltage between rise time)
capacitance
collector and emitter time
c cb collector-to-base feedback *r
rise
capacitance 'BM peak base current storage time

*s
50
Terms and Symbols
Power Transistors (Cont'd) V EBO emitter-to-base voltage, 'FSM peak surge (nonrepetitive)
Ty| clamped inductive collector open forward current
turn-off time Vp diode forward-voltage drop l average forward current, 180-
Vgg base supply voltage Vpy collector-to-emitter reach- degree conduction angle,
Vgp base-to-emitter voltage through (or punch through) half-sine wave
Vgp(sat) base-to-emitter saturation voltage lp reverse current
voltage a common-base current gain I

r av )
average dynamic reverse
(
collector-to-base breakdown (alpha) current, single-phase, full-

^(BR)CBO
emitter open P collector-emitter current cycle
voltage,
collector-to-emitter break-
gain (beta) IrM maximum (peak) reverse
\/(BR)CEO
down voltage, base open collector efficiency current
thermal time constant reverse recovery current
\/(BR)CEV collector-to-emitter break-
l
rr
2t amperes squared-seconds
down voltage with specified l
(fusing current for rectifier

voltage between base and
emitter Power Hybrid Operational Amplifiers protection)
collector-to-emitter A voltage gain Pp forward power dissipation

V(BR)CEX
Aq|_ closed-loop voltage gain ^FfAV) average forward power
breakdown voltage
A OL open-loop voltage gain dissipation
with specified circuit
between base and emitter CMRR common-mode rejection ratio PpM maximum (peak) forward
emitter-to-base breakdown fH closed-loop bandwidth power dissipation

\/(BR)EBO
voltage, collector open li
idling current Pp reverse power dissipation
input bias current Rs surge-limiting resistance
V CB collector-to-base voltage >IB
input offset current reverse recovery time
V CBO collector-to-base voltage, MO t
rr
emitter open 'o

quiescent current Vp forward voltage drop
V CC collector supply voltage 'om maximum peak quiescent vp instantaneous forward voltage
current drop
VC E collector-to-emitter voltage
V CEO collector-to-emitter voltage, 'S
short-circuit current Vp reverse (dc blocking) voltage
base open "T total power dissipation for

VR(RMS) RMS reverse voltage
each output transistor VRRM repetitive peak reverse voltage
V CE (sat) collector-to-emitter satura-
tion voltage °em common-mode input im-
\/RSM nonrepetitive peak reverse
pedance voltage
Vq£q(sus) collector-to-emitter sustaining
voltage, base open S/N signal-to-noise ratio
VRWM working peak reverse voltage
SR slew rate
collector-to-emitter voltage
^CER V ICR common-mode input voltage
with specified resistance
range Thyristors
between base and emitter
V| N input signal voltage swing (Triacs, SCR's, GTO's, and ITR's)
Vcer(sus) collector-to-emitter sustaining
V|0 input offset voltage and Diacs
voltage with specified resis-
v offset offset voltage
tance between base and di/dt rate of change of on-state
v OUT output voltage swing
current
emitter
VoutA/|N voltage gain
collector-to-emitter voltage di
F /dt rate of change of forward
^CES Vpp supply-voltage ripple
with base-emitter junction current (rectifier unit of ITR)
rejection ratio
short-circuited dv/dt critical rate of rise of off-
Vg supply voltage
state voltage
Vqev collector-to-emitter voltage
Z||y| input impedance
with specified voltage between '(BO) peak breakover current
A l; idling-current drift
base and emitter 'D instantaneous off-state
VQEy(sus) collector-to-emitter sustaining current
voltage with specified voltage 'DO instantaneous off-state
Silicon Rectifiers
between base and emitter current, gate open
collector-to-emitter voltage lp forward current dom maximum (peak) off-state
^CEX
with specified circuit between If(aV) average forward current current, gate open
base and emitter 'F(RMS) rms forward current drom maximum peak (repetitive)
Vq£_x<sus) collector-to-emitter sustaining lp|\/| maximum (peak) forward off-state current, gate open
voltage with specified circuit current 'drx dc off-state current, specified
between base and emitter I

FRM repetitive peak forward circuit between gate and
VpB emitter-to-base voltage current cathode
51
Terms and Symbols
Thyristors maximum (peak) on-state V instantaneous off-state vol-
'TM DX
(Triacs, SCR's, GTO's, and ITR's current tage, specified circuit be-
and Diacs) (Cont'd) maximum (peak) pulse tween gate and cathode
'TM(pulse)
on-state current Vqx dc off-state voltage, specified
'T(RMS) rms on-state current circuit between gate and
'drxm maximum (peak) repetitive dc
'trxm maximum (peak) (repetitive) cathode
off-state current with speci- on-state current, specified instantaneous forward voltage
vp
fied circuit between gate and operating circuit drop
cathode maximum (peak) surge (non- maximum (peak) forward
'TSM Vp|y|
'dxm maximum (peak) off-state repetitive) on-state current voltage
current, specified circuit maximum
'txm (peak) on-state cur- Vq dc gate voltage
between gate and cathode rent, specified operating circuit
Vqk dc gate-to-cathode voltage
instantaneous forward current pD device dissipation
'F V qq gate turn-off voltage
•fm peak forward current P D(AV) average device dissipation Vqp dc reverse gate voltage
'frm peak repetitive forward current P G(AV) average gate power dissipation
^GR(BR) reverse 9 ate breakdown
'fsm peak surge forward current P GM maximum (peak) gate power voltage
(nonrepetitive) dissipation
^GRM maximum (peak) gate reverse
>g dc gate current P GRM maximum (peak) reverse gate voltage
'g pulsed gate trigger current power
^GRRM Maximum (peak) repetitive
(gate drive current)
on-state power dissipation reverse gate vottage
'ggM maximum gate turn-off P T(AV) average on-state power Vqj dc gate trigger voltage
current dissipation
Vp dc reverse voltage
'gm maximum (peak) gate current
*d delay time maximum (peak) (repetitive)
reverse gate breakdown \/RROM
'GR(BR) tf fall time reverse voltage, gate open
current
*gq gate controlled turn-off time
VRRXM maximum (peak) (repetitive)
'grrm maximum (peak) reverse gate
(t + t ) voltage, specified circuit
s f
current
tgfrec) gate recovery time between gate and cathode
'gt dc gate trigger current
gate controlled turn-on time maximum
instantaneous holding current, VRSOM (peak) (nonrepeti-
'HO (td + t ) tive)reverse voltage, gate open
r
gate open
circuit commutated turn-off
VrSXM maximum (peak) (nonrepeti-
'ho dc holding current, gate open
time (t rr +t g(rec) ) tive) reverse voltage, specified
'L instantaneous latching current
rise time circuit between gate and
"L dc latching current reverse recovery time cathode
»0 average dc forward current
storage time
dc reverse current
Vpx dc reverse voltage, specified
|r V (BO) breakover voltage circuit between gate and
'R instantaneous reverse current
|- +V (BO)| |~ V (BO)| cathode
'RO instantaneous reverse current.
breakover voltage symmetry \/RXM maximum (peak) reverse
gate open
(for diacs) voltage, specified circuit
'rm maximum (peak) reverse
v (BO)0 instantaneous breakover between gate and cathode
current
voltage, gate open vj instantaneous on-state voltage
'rrom maximum (peak) reverse V -p dc on-state voltage
VD dc off -state voltage
current, gate open vj(|) initial on-state voltage
VD instantaneous off-state voltage
•rrx dc reverse current, specified
Vj|y| maximum (peak) dc on-state
V DM maximum (peak) dc off-
circuit between gate and voltage
state voltage
cathode ZQg gate source impedance
maximum (peak) reverse
V DROM maximum (peak) (repetitive)
'rrxm AV± dynamic breakback voltage
off-state voltage, gate open
current, specified circuit
V DRXM maximum (peak) (repetitive)
between gate and cathode
l
2t amperes squared-seconds off-state voltage, specified cir-
(fusing current for device cuit between gate and cathode

protection) v DSOM maximum (peak) (nonrepeti-
tive) off-state voltage, gate
»T instantaneous on-state current
dc on-state current open
•t
maximum (peak) on-state cur- V DSXM maximum (peak) (nonrepeti-
'tgqm
tive) off -state voltage, speci-
rent gate-turn-off capability
average on-state current
fied circuit between gate
'T(AV)
and cathode
52
Power Transistors
Technical Data
S3
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502
Low-Power Silicon N-P-N Planar Transistors
For Small-Signal Applications In Industrial and Commercial Equipment
Features:
RCA-2N2102 Planar construction for low noise and
These RCA types are silicon n-p-n planar is a direct replacement for
the 2N1613. RCA-2N2405 a direct low leakage

transistors intended for a variety of small- is
signal and medium-power applications. replacement for the 2N1893. All of these Low output capacitance
They feature exceptionally high collector- devices are supplied in the JEDEC TO-39 Low saturation voltages
to-emitter sustaining voltage, low leakage hermetic package.

Additional Features for 40366:
characteristics, high switching speeds,
TERMINAL DESIGNATIONS High reliability assured by five pre-
and high pulse beta (hpE)-
conditioning steps
Group A test data included in data
sheet.
2N3053
2N2102 2IM1613 40389
Maximum Ratings, Absolute-Maximum Values: 2N697 2N699 40366 2N1711 2N1893 2N2270 2N2405 40392 2N3053A 41502
* COLLECTOR-TO-BASE VOLTAGE V CBO 120 120 60 120 60 80

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With external base-to-emitter resistance (Rbe' ^ 10 ^ V CER' SUS )
100 140 50 70
With base-emitter junction reverse-biased Vqe\/(sus) 120 120 60 80

* With base open VceqIslis) 80 90 40 60
* EMITTER-TO-BASE VOLTAGE V EBO 7 5 5
* COLLECTOR CURRENT Iq 1 0.7 0.7
* TRANSISTOR DISSIPATION: PT
At case temperatures up to 25°C 3 3 3
0.8 0.8 0.8

At free-air temperatures up to 25°C
At temperatures above 25°C Derate linearly to maximum temperature
* TEMPERATURE RANGE:
Storage T stg -65 to +175 -65 to 200
Operating (Junction) Tq -65 to +175 -65 to 200
* LEAD TEMPERATURE (During soldering):
At distance from seating plane for 10 s max.
3*1/16 in. (1.58 mm) TL
* 2N-Series types in accordance with JEDEC registration data
*7 for 40392. "3.5 for 40389
COMMON-EMITTER CIRCUIT, BASE INPUT 1

|
COLLECTOR-TO-EMITTER VOLTAGE (VC E>'IOV COLLECTOR-TO-EMITTER VOLTS (VceI'IO

J? 1
~2K>
g
5 200 1
|
;
X 180- ,^V)RE IT*.

k iao j i
0^ 'N *0 °c
i wo
5r \ 5 * h
£
|
140
120 & q.^ '
v
\\ J 120- f>\ y
s
f*
[
| IOO
'^ fk u <r
-"- -,
"•
s
o, ,^ '
' -s ^ . \\
<* \
I
i
V eo
\ > 1
h t * Z: 1
.
1
-"
s *°
ffl [3?
1
u 20 =
° o i
1 0.1 K> IOO 000

COLLECTOR CURRENT (I,;)- COLLECTOR MILLIAMPERES (Ic>
Fig. 1 - Typical dc beta characteristics Fig. 2 - Typical dc beta characteristics Fig. 3 - Typical dc beta characteristics
for2N699, 2N1613, 2N2102, for2N1711. for 2N 1893, 2N2405.
2N2270, 41502.
54
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102 2N2270, ,
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502

ELECTRICAL CHARACTERISTICS, At Case Temperature (Trf 25° C unless otherwise specified
TEST CONDITIONS LIMITS

CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N2102
Vdc mA dc 2N697 2N699 2N 1613 40366 2N1711 UNITS
VCB VgE •c 'R MIN TYP MAX MIN. MAX. MIN MAX. MIN MAX. MIN MAX
* Collector Cutoff Current: 30 _ 0.01 1
With emitter open 60 - - - - 0.05 _ 0.01 _ 0.002 _ 0.01

'CBO <UA
AtT c = 150°C 60 - - - - - - 10 - 2 - 10
* Emitter Cutoff Current:
V EB = 5V 'ebo - - - - 0.05 - 0.01 - 0.002 - 0.005 AA
10 0.01 - - - - - - - 10 _ 20 -
10 0.1 - - - - - 20 _ 20 _ 35 _
DC Forward-Current Transfer Ratio "FE 10 108 - - - - - 35 - 35 _ 75 _
10 150» 40 - 120 40 120 40 120 40 120 100 300
10 500» - - _ _ _ 20 _ 25 _ 40 _
At TC = -55°C 10 10s - - - - - 20 - 20 - 35 _
;ollector-to-Emitter
Reachthrough Voltage: Vrt - - _ _ _ _ _ 120 _ 75 _ V

V EB = 1.5 V, l
E -0
Itollector-to-Base
Breakdown Voltage: v (BR)CB0 0.1 60 75 - 120 - 75 - 120 _ 75 _ V

With emitter open
Emitter-to-Base
Breakdown Voltage: VIBR1EBO 5 7.5 _ - _ 7 _ 7 _ 7 _ V
l
E = 0.1 mA
Collector-to-Emitter
Sustaining Voltage: v CEO' susl 100 a _ - - - - _ _ 65 _ _ _ V

With base open
With external base-to-emitter

resistance (R b e' = 10 ^2 V CER (sus) 100 a 40 60 - 80 - 50 - 80 - 50 - V
Base-to-Emitter Saturation
Voltage V BE (sat) 1508 15 - 1 1.3 - 1.3 - 1.3 - 1.1 _ 1.3 V
Collector-to-Emitter Saturation
Voltage V CE (sat) 1508 15 - 0.7 1.5 - 5 - 1.5 - 0.5 - 1.5 V
Common-Emitter, Small-Signal,
5 1 - - 35 100 30 100 30 100 50 200
Forward-Current Transfer Ratio
h fe 10 5 - 45 35 150 35 150 70 300
(f = 1 kHz)
Magnitude of Common-Emitter,
Small-Signal, Forward Currant 10 50 2.5 - 2.5
'- - _ _
Ihfel 5 3 3 3.5
Transfer Retio (f - 20 MHz)
Input Resistance: 5 1
- - - 20 30 24 34 24 34 24 34
f = kHz
hib
10 5 10 4
n
1
8 4 8 4 8
Small-Signal Reverse Voltage 5 1 - _ _ _ 3x10-4 _ 3x10-4 _ 3x10-4 _ 5x10-4
Transfer (Feedback) Ratio: h rb 10 1 - _ _ _ _ _ 3x10-4 _ _ _ _
f = 1 kHz 10 5 - - _ _ 3X10-4 _ _ _ 3x10-4 _ 5x10-4
Output Conductance: 5 1
- - _ 0.05 0.5 0.05 0.5 0.01 0.5 0.05 0.5
n ob (Jmho
f - 1 kHz 10 5 - - - - 1 0.05 0.5 0.01 1 0.05 0.5
Output Capacitance:
Cob 10 - 20 35 - 20 - 25 - 15 - 25 pF
l
E -0
Input Capacitance:
Cib - - - - - - 80 - 80 - 80 pF
V EB = 0.5V
Gain-Bandwidth Product f
T 50 100 - 50 - 60 - 60 _ 70 _ MHz
Noise Figure:
Circuit Bandwidth (BW) - 1 Hz
Reference signal freq. = 1 kHz
Generator resistance (Rq) NF 10 0.3 dB
510ni2N1613,2N1711) _ _ .. _ _ _ 12 _ 8
1 Kn<2N2102l - - - - - - - - 6 - -
Saturated Switching Time td+t r +tf - - - - - - 30 - 30 - _ TJS
Thermal Resistance:
Junction-to-case Rfljn - _ 75 _ 75* _ 58.3* _ 35* _ 58.3*
- - - - - °C/W
Junction-to -ambient RfljA 250 250* 219* 175* " 219*
*2N-Series types in accordance with JEOEC registration data
8 Pulsed, pulse duration - 300 Us, duty factor -2% (1.8% for 2N2102 only).
55
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502
ELECTRICAL CHARACTER ISTICS,/4f Case Temperature (Tq) = 25° C unless otherwise specified.

2N3053
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N1893 2N2405 40389 2N30S3A 41502
2N2270 UNITS
Vdc mAdc 40392
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN.lMAX
VCB VCE c <B
15 2
Collector Cutoff Current:
30 - - - - 0.25 - - - IJA
With emitter open 'CBO
60 0.05
90 0.01 0.01
- - - 50 - - - - - ~
60
At T C = 1 50°C
90 15 10
Emitter Cutoff Current: - - - - 0.25 - - - fJA

0.01 0.01 0.1 0.25
'EBO
V EB = 5 V,(4 Vfor 2N3053,
2N3063A)
10 0.1 20
10 1 30 -
DC Forward-Current Transfer Ratio hFE 10 10 a 35 35

10 150 a 40 120 60 200 50 200 50 250 50 250 20
At T C = 55°C 10 10 a 20
Collect or -to-Base
120 " 120 - 60 - 60 " 80 - - " V
Breakdown Voltage: V (BR)C80 0.1
With emitter open
Emitter-to-Base
VIBRIEBO 7 " 7 " 7 - 5 - 5 - 4 - V
Breakdown Voltage:
l
E = 0.1 mA
V CE0 (sus) 1003 " 90 - 45 - 40 " - "
Sustaining Voltage:
90 30 V
With base open 30 a 80
a
0.1

" " - " - ' " V
resistance (R BE >
= 10 ^ V CE R<SUs) 1003 100 140 60 50 70
= 500O 100 a 120

~ - " - 1.4 0.6
_ V
Base-to-Emitter Saturation 1503 15 1.3 1.1 0.9 1
V BE (satl -
Voltage 50 a 5 0.9 0.9
Collector-to-Emitter Saturation 1503 15 " 5 - 0.5 " 1.2 " 1.7 - 0.3 1.5
V CE (sat)
V
503 1.3 0.2
:
Voltage 5
2.5 150 - - - - - - - 1.7 - 1 -

Base-to-Emitter Voltage V
VBE 10 ^5&> 2.5
* Common Emitter, Small-Signal,

Forward Current Transfer Riatto hfT
e -
f = 1 kHz 5 1 30 100
= 1 kHz 5 5 50 275 5
45 5 275 _ _ -
- 1 kHz 10 5
2.5« 6 5* 5* 5
= 20 MHz 10 50
20 30 24 34
• Input Resistance:
"ib
5 1
- -
n
f = 1 kHz 10 5 4 8 4 8
5 1.25 x 3x 10"4
* Small Signal Reverse Voltage 1
10" 4
Transfer (Feedback) Ratio:
- 1.25 x " 3x1 0" 4 - -
f - 1 kHz n rb 10 5
10"4
" Output Conductance: 5 1

- 0.5 - 0.5
jjmho
h ob
0.5 0.5
- -
f = 1 kHz 10 5
" Output Capacitance: - 15 - 15 " 15 " 15 - 15 - 25 pF

Cob 10
=
l
E
* Input Capacitance: " " 85 " 80 - 80 - 80 - 80 pF
Cib 85
V EB = 0.5 V
- 120 - 100 - 100 - 100 - - - MHz
Gain-Bandwidth Product *T
50
Noise Figure:
Circuit Bandwidth (BW) = 1 Hz
Reference signal freq. = 1 kHz
- " - 6 " 10* " - - - - - dB
Generator resistance (Rq) = NF 10 0.3
500 i7 (2N2405)
1 kQ (2N2270)
T)s
* Saturated Switching Time td + tr+<f
Thermal Resistance:
58.3 35 _ 35 _ 35* _ 35 _ 58.3 °C/W
Junction-to-case R0JC
- 219 - 175 - 175 - 175" - 175 - 219
Junction-to-ambient R0JA 1
|
2N-Series types in accordance with JEDEC registration data. a Pulsed; pulse duration = 300 us, duty factor ^2%.
56
1 : — V
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502
COLLECTOR-TO-EMITTER VOLUME (VÎ'IOV |
- 200
In. Ls^
| 129 J$\ -is
wo
t
~~<
^
#1
s so
-2 8
\
COLLECTOR CURRENT II C > mA S2CS-I2J5HII
Fig. 6— Typical dc beta characteristics for

2N3053, 2N3053A, 40389, 40392.
c °
I0 °I00
COLLECTOR- TO- EMITTER VOLTAGE IV CE — V
92CS-I5736RI
Fig. 4 - Maximum operating areas for 2N2405.
0.5 0.6 07 0.8 0.9 I II 12 1.3 14
BASC-TO-EMITTER VOLTAGE 1V BE ) —
Fig. 7 Typical transfer characteristics

for 2N1613, 2N1711, 2N1893,
l0
8
CASE TEMPERATURE (TC )»25°C 2N2102, 2N2405.
(CURVt MUSI DC. UtKAl tU LINtAK ly||||||||||
6 WITH INCREASE IN JEMI 'Erature;
i
4 Ijl
||II*
2 |
liIIi
-
< j|||| ;l. 1 'I T; mill 1 1 1
Hill 11+1
T
I
I
ic max. yinn tWPJLSE OPERATION*iiMlat ORMA LizEb|l||H|D |,, IT
s?
: :
CONTINUOUS) P OWER
O 8 j ,|
L 1 inlMllllllll
jg^WM ULTIF LIER JH SS = r--

H
— 6 =
1- 1IIII
z
UJ 4 :
4tt
OC
III
<
OC
1
:i;:
1 1 1 1 1 1
yj||[j^3 6pi r=
8 Typical transfer characteristics for
O Fig. -
2: ~~ rr~ 2N3053, 2N3053A, 40389, 40392.

OC
O tor
~ !:!:hfc£S
EtItoiF2
o :ibik COLLEC TOR TO- El •it TER VOLTAOE (Vcfrl-IO v[|||||||l||||||||||||l||
UJ
-J
O
0.1
8:
= ttrtttrt 1H
R oinui.c
6r
urn
: -
""l 'II' i i
rUtr
IMilfrHul-rr
ijirpTh
!
t j_! 1
_ 1, 1
miliilil
WWII;
10
Fgg
1 1 1 1 1 1 1 1 1 1 II 1 II j^lTflTW
O =tf NC>NREPETITIVE^ffi
6 -
LSE ill ^m « •
4: —
till trrt
^? ;,
fWtttfflr ;
S ^44; .iij.'4''-'p
I
|!|||||||||||Sj||||||j||
SlVCEO (MAX.)-40 V (2N3653)i iir i
2 =
1
a VCE0
IrrffifftttHfftfiUIIIIIIIIMIIIIillllllllllir
(MAX.) -60 V 2N3053A) (
'U'^'LI
:
l:
3 «
jijljl j
r 1
2
+~u "±ppi
i
m ^jjjjn|t|:|d[
-rrtr
i 4+4
fptPrr ,-j [I:
0.01 T'" tttir 1 ! 1 illl iiii iiiiiiiiiiiii "|l '
1 : 1 1 "4'T"'"'
2 4 6 8 |o 2 4 6 8 00 2 4 6 8 I000
—V
I
COLLECTOR-TO-EMITTER VOLTAGE (V C e)
92CS-27989
Fig. 9 Typical input characteristics for

Fig. 5 — Maximum operating areas for 2N3053 and 2N30S3A. 2N3053, 2N3053A, 40389, 40392.
57
— V V
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502
1000 COLLECTOR nn n .
1000
EMITTER CURRENT (I E l'0
^\ofi^ yl* V& <•*
J FREE-AIR TEMPERATURE (T F A>'23* C
*>
] ]
T» *&• 1 1 1 1 1
II
3" 2 s> ** 200j ~2 1
K ioo
7
tAY
f T> ioo rr
• ^r " .
-
i
Tr T «:
r L
~I — I
t t --,
\\
200 -J *
t
a 1
I: V^ k^ llTgl
i
' U
°
/s
c,
—
—HiSo^
\—\J»-
ITS V. » L. i
OUTPUT CAPACITANCE FOR VCB
1 r f
« ,IN- Ml OWI )TH PW KXK T l T (McHOO
:
i 1 1 1 1 1 1 1 1 1
1 1 1 1 1 1
c 2 310 4 9 60 TC
COLLECTOR-TO-EMITTER VOLTS (Vcf ) Hcs lit eXLECTOK-TO-IWTTEH VOLT/We.lVdl—

REVERSE-BIAS VOLTS (
BE OR V CB I
SZCS-IIUS
Fig. 10- Typical gain bandwidth product Fig. 1 1 - Typical gain bandwidth product (fj) Fig. 12- Typical capacitance characteristics
(f ) for 2N1711, 2N1893.2N2405. 2N699, 2N1613, 2N2102, 2N2270,
for for all types.
T
2N3053, 2N3053A, 40389, 40392.
J\0°"
TM>
COLL ECTO 1 ML IAMJ EK« JICJ^ tS#
^Hr-
-^»
gLJ —k&
5
8 °'' __
rz
i
n a S6 - » i 23 i ?4 ij10 1! 5 ISO 17 "^6 ^S 6 is "so re ioo ia iso its
JUNCTION TEMPERATURE ITj) — 'C FME-AIR TEMPERATURE <TF4)—"C FREE -AIR TEMPERATURE (TFA I— *C
«CS 1*52
Fig. 13- Typical collector-cutoff current Fig. 14 Typical collector-to-emitter saturation Fig. 15- Typical base-to-emitter saturation
characteristics for 2N699, 2N1893, characteristics for 2N 1893, 2N2405. characteristics for 2N1893, 2N2405.
2N2405.
COLLECTOR-TO-EMITTER VOLTAGE IVCE> —V MCS _,il7»«S
Fig. 16- Typical low-current output character- 18- Typical low-current output
Fig. 17 - Typical low-current output character- Fig.
istics for 2N699, 2N1613. 2N2102,
istics for 2N 1711. characteristics for 2N1893.
2N2270, 41502.
AMBIENT TEMPERATURE (T»> .25'C
ink;;; ;:
».»
"°° *:
 COLLECTOR-TO-EMITTER VOLTAGE (V C E> —V
Fig. 19 - Typical low-current output Fig. 20 - Typical high-current output Fig. 21 - Typical high-current output
characteristics for 2N2405. characteristics for 2N699, characteristics for 2N1613,
2N2270. 2N2102, 41502.
58
.
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502
COMMON-EMITTER CIRCUIT, BASE INPUT. COMMON-EMTTER CIRCUIT BASE INPUT
FREE-AIR TEMPERATURE" 25* C FREE -Aft TEMPERATURE t TFAI'25- C
-
I
SCO •&» ....

<"'
h.
j.:
= 400
U£-..
i _2
''-'-''-
:
:::: :::: ;;;;;
'oo ; :
i •n? ::!:
pL •111 _L lii;
M. iiii»SîM!iiiiM^Rgstti,i;P
;
:ii:
lili iiii
COLLECTOR-TO-EMITTER VOLTS (Vc eI COLLECTOR-TO-EMITTER VOLTS (VCE> 92CS-IUT.
Fig. 22 -Typical high-current output Fig. 23 - Typical high-current output Fig. 24 - Typical high-current output
characteristics for 2N171 1 characteristics for 2N1893. characteristics for 2N2405.
COLLECTOR-TO-EMITTER VOLTAGE IVCE I-
Fig. 25 - Typical high-current output charac-

teristics for 2N3053, 2N3053A,
40389. 40392.
59
1
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347-40349, 40367

Hometaxial-Base Silicon N-P-N Power Transistors
Features:
General-Purpose Types for Low-Power Applications High-temperature characterization
High dc beta at 200 mA
These RCA types are hometaxial-base, and class B push-pull audio and servo
Full switching-time characterization at
silicon n-p-n power transistors intended amplifiers.
200 mA
for a wide variety of applications in in- The 2N1700 and 40367 are supplied in
Additional features for 40367:
dustrial and military equipment. They are the hermetic JEDEC TO-39 package or by five
High realiability assured
particularly useful in power-switching cir- TO-39 with factory -attached mounting
preconditioning steps
cuits such as in dc-to-dlc converters, in- flange or heat radiator.
Group A test data in data bulletin
verters, choppers, solenoid and relay
controls; in oscillator, regulator, and
pulse-amplifier circuits; and as class A
40347 40348 40349

2N1479 2N1480 40347V1 40348 V 40349V1
Maximum Ratings, Absolute-Maximum Values: 2N1481 2N1482 2N1700 40347V2 40348V2 40349V2 40367
•COLLECTOR-TO-BASE VOLTAGE VcbO 60 100 60 60 90 160 100 V
* COLLECTOR-TO-EMITTER VOLTAGE:
With base open, sustaining Vceo' sus * 40 55 40 40 65 140 55 V

With emitter-to-base reverse! biased
V EB = 1-5 volts)
< V CEV 60 100 60 60 90 160 100 V
* EMITTER-TO-BASE VOLTAGE V EB0 12 12 6 7 7 7 12 V
* COLLECTOR CURRENT Ic 1.5 1.5 1 1.5 1.5 1.5 1.5 A
PEAK COLLECTOR CURRENT ICM - - 3.0 3.0 3.0 - A
* EMITTER CURRENT I .75 -1.75 - - - A
£
* BASE CURRENT IB 1 1 0.75 0.5 1 A
* TRANSISTOR DISSIPATION: Pj
At case temperature of 25°G 11.7 11.7 11.7
(40347V2) (40348V2) (40349V2)

8.75 8.75 8.75
(40347) (40348) (40349)
At ambient temperature up to 25°C 1.0 1.0 1.0
(40347) (40348) (40349)

4.4 4.4 4.4
(40347V 1) (40348V 1) (40349V 1)

Operating and Storage Tq, T stg - -65 to 200
* LEAD TEMPERATURE (During soldering):
At distances^ 1/32 in (0.8 mm) from seating plane

for 10 s max T(_
*2N-Series types in accordance with JEDEC registration data
TERMINAL DESIGNATIONS
JEDEC TO-39
2N1 479-2N1 482.2N1 700.
40347-40349.40367
JEDEC TO-39 with Mounting
40347V2, 40348V2.40349V2
JEDEC TO-39 with Hut

Fig. 1 Typical input characteristics for Fig. 2— Typical output characteristics for Radiator
2N1479-2N1482. 2N1479-2N1482. 40347V1 ,40348 V 1 ,40349 V 1
60
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347-40349, 40367

ELECTRICAL CHARACTERISTICS, A t Case Temperature (Tr) = 25°C unless otherwise specified
TEST CONDITIONS LIM TS
VOLTAGE CURRENT
CHARACTERISTIC SYMBOL Vdc mAdc 2N1479 2N1480 2N1481 2N1482 2N1700 40367 UNITS
VCB VCE veb "C b <E MIN. MAX. MIN MAX. MIN MAX. MIN. MAX. MIN MAX. MIN MAX.
Collector Cutoff Current: 30
'CBO 10 10 10 ("A
TC = 150°C 30 '.-
500 _ 500 _ _
-
500 500 1000
" Emitter Cutoff Current
•ebo 12 - 10 - 10 - 10 - 10 - - 2 AlA
6 25
Collector-To-Emitter
Voltage:
With base-emitter junction

reverse -biased V CEV 1.5 0.25 60 - 100 - 60 _ 100 _ _ _ _
100 V
1.5 0.5 - - - - - - _ _ 60 _ _ _
With base open, sustaining v CEOls"S> 50 40 - 55 _ 40 _ 55 _ _ _ 55
Base-To-Emitter Voltage VBE 4 200 - 3 - _ _ _ _
3 3 3 3 V
4 100 - - _ - _ - _ _ _ 2 _ _
Collector-Emitter
Saturation Voltage V CE (sat) 200 10 1.4 V
DC Current Transfer Ratio "FE 4 200 20 60 20 60 35 100 35 100 35 100
4 100 20 80
Small-Signal Current
Transfer Ratio 4
"fe 5 50 Typ." 50 typ." 50 Typ." 50 Typ.* 40 Typ. _ _
DC Collector-To-Emitter
Saturation Resistance rcE' 53 '' 200 20 - 7 - 7 _ _ _ _ _ _ _ _ n

200 10 - - - - - _ 7 _ 7 _ _ _ _
100 10 10 _ _
Collector-To-Base Capacitance c ob 40 _
150 Typ." 150 Typ.* 150 Typ.* 150 Typ." 150 Typ. _ pF
Thermal Time Constant Tl 10 Typ.* 10 Typ.* 10 Typ." 10 Typ." _ _
10 Typ. ms
Alpha-Cutoff Frequency f ab 28 5 1.5 Typ.* 1.5 Typ.* 1.5 Typ.* _ _
„ 1.5 Typ." 1 .5 Typ. MHz
Switching Time:
Delay Time «d» 0.2 Typ.* 0.2 Typ.* 0.2 Typ.* 0.2 Typ." 0.2 Typ.
Rise Time «r* Typ.* Typ.* Typ.* Typ." _ _
1 1 1 1 1 Typ.
Storage Time «s* 0.6 Typ.* 0.6 Typ.* 0.6 Typ." 0.6 Typ." _ _
0.6 Typ.
Fall Time tf» Typ.* Typ.* Typ.* Typ." _ _
1 1 1 1 1Typ.
Thermal Resistance:
Junction-to-case R0jc 35 35 35 _
35 35 35
Junction-to-free air R0JFA 200 200
| 200 200 200 - -
*2N-Series types in accordance with JEDEC registration data.
• IC = 200 mA, Bl = 20 mA,
l
\q = -85. mA
2
COL uEC OR T0- MlTTER VOL TAG lv r E»- 4 v_J::: ::

-i !i«i
:::: !
:':' :::: •hI;
1
':'
\
:;;; i!^
;:;: ":;•::
:
80 -
i k—
j 2r
::::!
100
r. -
i
,^
1 1 :::::
y ^
60 Z n .
l
••
'V
cas E -tMPE. da' JHE i
c i ?5 <' -t»CE =
r
,
i ^ /
-65 •C :
i§ so
0* t
&
\
- ^ 4
200-C § 10 —
20
V cj-j^ >k
° £ " <
Q
i
0.2 04 0.6 08 I n
.
i n
* 1
92CS-M57JRI
COLLECTOR CURRENT (It)— COLLECTOR CURRENT (l
c
>— •* .,ui»
Fig. 3— Typical dc beta characteristics for Fig.4— Typical dc beta characteristics Fig. 5— Typical dc beta characteristics
2N1479-2N1482. for 2N 1700. for 40347.
61
1 21 1
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347-40349, 40367

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C unless otherwise specified

CHARACTERISTIC SYMBOL VOLTAGE CURRENT UNITS
Vdc Adc 40347 40348 40349
VCE VBE ic b MIN. MAX. MIN. MAX. MIN. MAX.
Collector-Cutoff Current
With external base-to- - -
30 1
emitter resistance 60 - 1 |UA

'CER
= k£l 90 2
(R BE ) 1
30 1
60 - - - mA
With R BE = 1 k£2 'CER
1
1
and Tq = 150°C 90
-7 - 10 - 10 - 10 MA
Emitter-Cutoff Current 'ebo
4 0.15 30 125
DC Forward-Current 4 0.30 30 125
Transfer Ratio hFE 4 0.45 25 100 10
4 1.00 10
Co I lector-to- Emitter
Sustaining Voltage:
v CEV <sus) -1.5 0.050 60 - 90 - 1609 - V
reverse biased
V CE0 (sus) 0.050 40 - 65 - 140 a - V

With base open
4 0.15 1.1
VBE 4 0.30 - - 1.3 - V

Base-to-Emitter Voltage
4 0.45 1.5
Collect or-to-Emitter 0.15 15 mA 0.15
Saturation Voltage V CE (sat) 0.30 30 mA - - 0.75 - V

0.45 45 mA 1
Forward-Bias Second Break- 38 345

down Collector Current 63 - 208 - - mA
>S/b
(1-s non-repetitive pulse) 138 95
20(max.) 20(max.) 20(max.)
Thermal Resistance : 40347 40348 40349

Junction-to-Case 15(max.) 15(max.) 15(max) °C/W
R0JC
40347V2 4 0348V 40349V2
Thermal Resistance: 40(max.) 40(max.) 40(max)
Junction-to-Ambient R0JA 40347V 40348V 40349V °C/W
1
Pulsed; pulse duration = 300 /is, duty factor ^2%.
COLLECTOR TO EMITTER VOLTAGE (V c£ ) ' <V

CASE TEMPERATURE (T
c
) ' 2S°C
?<0 J
2.0
s m
&.
£
£
160
120 rf
\
\ § 1.2
fs
^
-
O
TS&
1
/
""Sv,
•#"_.
3 10
/ V £ O.i
r [ !\
J 0.1
v i
:
j
l
j
2 1
1
COLLECTOR CURREhTdc COLLECTOR CURRENT (l

c — mA
) mw»o COLLECTOR CURRENT (l
c
)-mA wci.i.-.r,
Fig. 7— Typical dc beta characteristics for Fig.8— Typical gain-bandwidth product vs.
Fig.6— Typical dc beta characteristics for
40349. collector current for 40347,
40348.
40348 and 40349.
62.
, VV V V V V
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347-40349, 40367

l0
.
(CURVES MOST BE DERATED LINEARLY:
^PF 3 + pis QnH ~ ™ i|2|;i
6 :l3
1
it±:s ;ii
.....
t! !ii
!m f 1 =M J ;:• •.':'.:
::::
7 +
iiait in:
"
4 i* !
"j Hr lllhSORMALIZED :
;i:
POWER .'; •
:r.:iT PI T:' .- f :...
:*'. '•'
J • * :•" :
i;:i H i. t: -:; :
i
:
jj#* ULT1PLIER
: :
-i
: 100 /rt 4i:|4.:l;:i
r
2
_I C (MAX )
::'-.: ;
:
: -. :
. PULSE OPERATION* 3(210 W) i
IS ' ^
pi- -'----
% " ^ ^®
?
I.O
;
SFf
m — 15.0 Zi
Vw
8
J.
"o
H
— t: TTrl
— 3fc rc*3R
TT-f-f-
:• 10.0
6
f-
!:\"
B=l
jj-'vjfc
4
*V TTlil ..:
-H-f 6.0
(E
5
u
: |. ..-:
^Sfe^
%?a^!
";?'
•Si-:
ih
S
\-
2
""
I:^
v> '
*,: '.
-
u -** :^S 2.3'"

u
-1
• :
-J
8 o.i
: ; . i.. .
".:: -t^
V/.1-
i'^t HI
'(:
— ^"h r--?S _|_u
•
e
""•FOR SINGLE NON-REPETITIVE PULSE r:
io ....
6
a -.1 l-.1iWiHi:S!li:!=l;!i: !
::! : 10 20 30 40 SO 80
4
VCE0(MAX.)-40V (4034 7)« : "
|
COLLECTOR-TO-EMITTER VOLTAGE (VcE>-V
I :
92CM-II555R2
;M-|^;l!l!l;l:iyi!H^ :
;
:;
::.. :
-I l:Mll:l;hi!!l!!;:|!!iil 1 ;" Fig. 10-Typical output characteristics for 2N1700.

2
VcEO (MAX
.!
—: 1 |
::• ;
91
-r i
:
:h: -
0.01 lilll TT-
;::: :..::. :. \
iiiiii t ;
6 e
10
COLLECTOR-TO-EMITTER V0LTA6E (VCE ) —

92SS-3586RI
Fig.9-Maximum operating areas for 40347, 40348, and 40349.
case temperature (tc > 2s»c

CASE TEMPERATURE <T(;) • 2S»C
CASE TEMPERATURE
200
(T
C|
. 2S°C
-4
BASE CURRENT (l
B) • UaA
in
400
y 9
7 ico 3.0 j
r
]r
7 1
BASE CURRENT del 1 >A
ii40
£ r'
l"
"
1
f- J
S
'
JT 100
s
120
r IS
s
S loo i
f
\ 1
tiro <
fm 1
in
I- 3
—
f 3 >-~ v
..-t
1"
r g 100
2
40
f
o.s
1
1
20
/ \
1.0 2.0 3.0 4.0 SO (.0 2.0 3.0 4.0 5.0
COLLECTOR-TOEMITTCR VOLTAGE (VCE )— mum COLLECT0RT0EMITTER VOLTAGE (Vcj)— mum COUECTOR-TO-EWTTER VOLTAGE (Vce>— V „>»„.
Fig. 11—1 ypical output characteristics for F/jj. 1 2— Typical output characteristics for Fig. 13— Typical output characteristics for
40347. 40348. 40349.
COLLECTORTO-EWTTER VOLTAGE (Vcc ) • 4V COLLECTOR TO EMITTER VOLTAGE (Vc£l • 4V COLLECTOR TO EMITTER VOLTAGE (Vc£l - 4V
1"
j
i
300
&
//
//
f S
r
if
Z
WO
300
T <$*/
*/*l
I-
S
E in
m
in
\u
120
1/
*/ */'
7
/
200
$,'*. m
I
"
| / s ' /
~i §
a w
$7
/
i no 4V §
|
*,
/
X
in
7 I
20
'
0.2 0.4 0.( 0.1 1.0 1.2 1.4
BASE-TOEWTTER VOLTAGE (V
Bt l— mum BASE TO EMITTER VOLTAGE (VgEl— mum BASE TO EMITTER VOLTAGE (VgEl— mum
Fig. 14— Typical transfer characteristics for Fig. 15— Typical transfer characteristics for Fig. 16— Typical transfer characteristics for
40347. 40348. 40349.
63
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347-40349, 40367

I0""e COLLECTOR-TO-EMITTER VOLTAOE (Vce)'JOV — COLLECTOR -TO-EMITTE VOLTAGE (Vr.E>»60V
1 — I0* 5 6 COLLECTOR TO-EMITTE * VOLTAGE IVCEl ,|O0V _ l
BASE-TO-EMITTER RESISTANCE IRBE>"000 — BASE-TO-EMITTER RESISTANCE IRBE
i IC 5 ,- i io-S-
U^
8
"
l0 6
\
s
_^
I
S S
& S
5 2
" I0'
6
b
= ^^
"7
l0
i 8
S S
J ,!
io-'»
— -C CASE TEMPERATURE (T c — °c CASE TEMPERATURE (T c l

— °C
CASE TEMPERATURE (T c l
)
Fig. 1 7— Collector-cutoff-current characteristic Fig. 1 8— Collector-cutoff-current characteristic Fig. 1 9— Collector-cutoff-current characteristic

for 40347. for 40348. for 40349.
COLLECTOR CURRENT (l c l'BASE CURRENT (lg) 10

COLLE CTOR-T J-BASE VOLTA(iEIVCBO *50V
2 CASE TEMPERATURE (T c 25»C >
-
1
1 100 I
1 000
| 60
-a \
800
- - "mSO
1
£ ic = 600 ty £40 $
1
?l
t o ynTtT
o 30
"i <0O
3 20
o 100
10
0.1
COLLECTOR-TO-EMITTER SATURATION VOLTAGE, V CE (SATI— V„ C! „ JOO

BASE-TO-EMITTER VOLTAGE (V BE)-V
92C5 -10881' 92CS-M569RI
Fig. 20— Typical leakage characteristics for Fig.21 — Typical saturation characteristics for Fig. 22— Typical input characteristics for
2N1479-2N1482. 40347, 40348 and 40349. 2N1700.
K7»
COLLECTOfpTO-BASE VOLTS (VC B>'» f:'.~
INDUCTANCE (L)-75mH
1^~
< 08
X
I
l ( l
i
i"T -V 1
is
y :t2
h jr 07 :^4i
lie /
J*^ ||f
|i
y^ 8 os
0.5
JUNCTION TEMPERATURE— C
BASE-TO-EMITTER VOLTAGE IV BE ) —V
Fig.24— Reverse-bias second-breakdown

Fig. 23 — Typical leakage characteristics characteristics for 40347, 40348
for 2N 1700. and 40349.
64
'
POWER TRANSISTORS
2N1483-2N1486, 2N1701, 40368

General-Purpose Types for Medium-Power Applications Features:
These RCA types are hometaxial-base regulator, and pulse amplifier circuits;
High-temperature characterization
power transistors of the silicon n-p-n and as class-A and class-B push-pull audio
High dc beta at 750mA
type intended for a wide variety of appli- and servo amplifiers. characterization
Full switching-time
cations in industrial and military equip- 750 mA
at
ment. They are particularly useful in These transistors feature high beta at
power-switching circuits such as in dc- high current, and excellent high-temper-
to-dc converters, inverters, choppers, ature performance. They are supplied in
solenoid and relay control; in oscillator, the JEDEC TO-8 hermetic package.
High reliability assured by five pre-
Maximum Ratings, Absolute-Maximum Values: 2N1483 2N1484
conditioning steps
2N1485 2N1486 2N1701
40368 Group A test data in data bulletin.
* COLLECTOR-TO-BASE VOLTAGE VcBO 100
* COLLECTORTO-EMITTER VOLTAGE: ,
With bate open (sustaining voltage) Vceo' sus '
With emitter-to-base reverse

biased (Ve b ) - 1.5 volts) V CEV 60 100
* EMITTER-TO-8ASE VOLTAGE V EB0 12 12
* COLLECTOR CURRENT I
c 3 3 TERMINAL DESIGNATIONS
* EMITTER CURRENT I
E -3.5 -3.5
* BASE CURRENT I
B 1,5 1.5
* TRANSISTOR DISSIPATION: ?T
At case temperature of 25°C 25 25
At case temperature of 100°C 14.1 14.1
Operating and Storage T j T^g , -65 to +200
PIN TEMPERATURE (Duningsoldering):
At distance >1/32 in. (0.79 mini
from seating plane for 10 s max T|_
•2N-Series types in accordance with JEOEC registration data
*W I
COLLECTOR-TO-EMITTER VOLTAGE (Vc£)'4v[
5 Ml
* a lit
**
Ft§
4 CASE TEMPERATURE IT C ! I75'C fiMMi
V 40
i
g 20
|[||||||||||l]H^^^^Mffig-6S'cm
COLLECTOR AMPERES BASE-TO-EMITTER VOLTAGE (V B ^-V

92CS-I0444R2
COLLECTOR CURRENT (Itl-A MC5 . M574m ^ ct .,
Fig. 1 — Typical dc beta characteristics for Fig. 2— Typical dc beta characteristics for Fig. 3— Typical input characteristics for
2N1483-2N1486, and 40368. 2N17Q1. 2N1701.
COMMON-EMITTER CIRCUIT, BASE INPUT. C* SE TEMPERATURE (T c )'2S*C B8

COLLECTOR-TO-EMITTER VOLTS = 4 ....
CURVE CASE TEMPERATuR E -*C
....!..,!...
-1 -feS
T »
i :
*W^2C<)u|,||IMMl|n||mtMrp
7
± ^
2
E 1
* 60 ....;.... i z « IS
iHlllillllllii
ir '
1 ff
Bmw 1 1
z0
ioc
.... ....:....
6C
1 40 .._,
4C
tBASECURRe NT II B
.... ....
0.5
1 1:: V-
SfijIS'ljjffi
s-
Sifcil llflliJiS
s 2 5 10 20 30 40 50 60
BASE-TO-EMITTER VOLTS (VÔ 92CS-I0443R3 9 j CM .„.
COLLECTOR-TO-EMITTER VOLTAGE (V C E>-V
Fig. 4 — Typical input characteristics for Fig. 5— Typical output characteristics for Fig. 6— Typical output characteristics for
2N1483-2N 1486. and 40368. 2N1483-2N1486, and 40368. 2N1701.
65
POWER TRANSISTORS
2N1483-2N1486, 2N1701, 40368

ELECTRICAL CHARACTERISTICS, at Case Temperature (T ) - 25°C unless otherwise specified
c
CHARACTERISTIC VOLTAGE CURRENT UNITS
Vdc mA dc 2N1483 2N1484 2N1485 2N1486 2N1701 40368
VCB VC E «C <B MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN MAX. MIN. MAX.
'CBO 60 - - - - - 750 -
30 15 15 15 15 100 9
HA
At T c = 1 50°C 30 - 750 - 750 - 750 - 750 - 1500 - -
'ebo
V EB =12V - 15 - 15 - 15 - 15 - - 5 MA
= 6 50
4 750 a 20 60 20 60 35 100 35 100 35 100
hFE
4 300a 20 80
20 2500a 5
V CE0 (sus) 100 a 40 - 55 - 40 - 55 - 40 b - 55 -

V CEV V
V BE = -1.5V 0.25 60 - 100 - 60 - 100 - - - 100 -
V CEX
V BE = -1.5V 0.75 - - - - - - - - 60 b - - - V
VB E 4 750 a 3.5 3.5 2.5 2.5 2.5
4 3008 - - - - - 3 - V
20 2500 a 13
V CE (sat) 750 40 0.75

V
2500 a 1000 12.5
rcE( sat > 750 75 - 2.67 - 2.67 - 1

- 1
- - -
300 30
n
5
c ob 40 175 (typ.) 175 (typ.) 175 (typ.) 175 (typ.) 175 (typ.) - - pF
r
1
10(typ.) 10 (typ.) (10 (typ.) 10 (typ.) 10 (typ.) - - ms
f
ab 28 5 1.25 (typ.) 1.25 (typ.) 1.25 (typ.) 1.25 (typ.) - - - MHz
f
hfb 6 5 -I - - I
- - I
- -I - 350 |
- - - kHz
28 0.5 100 - - 1 (typ.) - MHz
# - -
td 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.)
#
tr 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) - -
US
-
ts 0.8(typ.) 0.8 (typ.) 0.8 (typ.) 0.8 (typ.) 0.8 (typ.) - -
tf* 1.1 (typ.) 1.1 (typ.) 1.1 (typ.) 1.1 (typ.) 1.1 (typ.) - -
R 0JC - 7 - 7 - 7 - 7 - 7 - -
°C/W
R 0JA - 100 - 100 - 100 - 100 - 100 - -
a Pulsed, pulse duration =
300ms, duty factor = 1 .8%. • c = 750
l mA, B I = 20 mA, lg = -8.5 mA. * 2N-Series types in accordance with JEDEC registration data.
(0*. (VCB I-
EMITT ER OPE N.
COLLE CTOR-T O-BASE VOLTS 30
< 4
<n ioo 1
31 io 1
Og 4 - - 2
1
§3 j
? to-
TO^
K ',
^^ -
4 ,
Q,<
92CS-I08»J
JUNCTION TEMPERATURE (Tj) — "C 9JCS-I9JI
Fig. 7 — Typical collector-cutoff current for Fig. 8— Typical collector-cutoff current

2N 1 483-2N 1 486 and 40368. characteristics for 2N1701.
66
A
POWER TRANSISTORS
2N1487-2N1490, 2N1702, 40369

General-Purpose Types for High-Power Applications Features:
These RCA types are hometaxial-base regulator, and pulse-amplifier circuits; High-temperature characterization
power transistors of the silicon n-p-n and as class-A and class-B push-pull High dc beta at 1.5A
type intended for a wide variety of ap- audio and servo amplifiers. Full switching-time characterization
plications in industrial and military equip- These transistors feature high power- at 1 .5A
ment. They are particularly useful in dissipation ratings, high beta at high
power-switching circuits such as in dc-to- current, and excellent high - temper- Additional Features for 40369:
dc converters, inverters, choppers, sole- ature performance. They are supplied in
noid and relay controls; in oscillator, the JEDEC TO-3 hermetic package. High reliability assured by five pre-
conditioned steps
Maximum 2N1487 2N1488
Ratings, Absolute-Maximum Values: 2N1702
2N1489 2N1490 Group A test data included.
40369
* COLLECTOR-TO-BASE VOLTAGE V CBO 60 100
* COLLECTOR-TO-EMITTER VOLTAGE:
With base open (sustaining voltage) V££q(sus) TERMINAL DESIGNATIONS
With emitter-to-base reverse
biased (Vg B » ) 1.5 volts) V CEV
* EMITTER-TO-BASE VOLTAGE V EB0
* COLLECTOR CURRENT I
c
* EMITTER CURRENT I
E
* BASE CURRENT I
B
•TRANSISTOR DISSIPATION: PT
At mounting-flange temperature of 25°C
At mounting-flange temperature of 100°C
JEDEC TO-3
Operating and Storage Tq, T stg
PIN TEMPERATURE (During soldering):
At distance > 1/32 in. (0.79 mm)
from seating plane for 10 s max Ti_

i4o COMMON-EMITTER CIRCUIT, BASE INF
COMMON-EMITTER CIRCUIT, BASE INPUT.
I MOUNTING-FLANGE TEMPERATURE -25'C
^ 'ii
\
MOUNT ING-rLANGE V«M" VOLTAGE AT WHICH ALPHA (a) AT
LOW VOLTAGE X THE MULTIPLICATION
25 FACTOR (M)= I
f \
]
-65
200
1 k ::::
*
••
M :i
i
,n
<
/!:
Vs ;
ij
'
;;
£
::
ii
*H :;;•
ijii ill
:! ^ rr
;:;; :'!:
m
COLLECTOR AMPERES COLLECTOR-TO-EMITTER VOLTS
COLLECTOR CURRENT (!£>—
Fig. 1 — Typical dc beta characteristics for Fig. 2— Typical dc beta characteristics for Fig. 3— Typical output characteristics for
2N 1487 -2N 1490, and 40369. 2N1702. 2N1487-2N1490, and 40369.
CASE TEMPERATURE IT C ) 25*C
BASC-TO-EMITTER VOLTS (V BE 92CS-I045«2 92CM-II564R2

)
BASE-TO-EMITTER VOLTAGE (Vg^-V 9ZCS-II567RI COLLECTOR-TO-EMITTER VOLTAGE (Vce'-V
Fig. 4 — Typical input characteristics for Fig. 5 — Typical input characteristics for Fig. 6— Typical output characteristics for
2N1487-2N1490, and 40369. 2N1702. 2N1702.
67
/
POWER TRANSISTORS .
2N1487-2N1490, 2N1702, 40369

ELECTRICAL CHARACTERISTICS Mounting-flange temperature = 2S°C unless otherwise specified
DC DC DC DC
COLLEC- EMITTER COLLEC- BASE
CHARACTERISTIC TOR VOLTAGE TOR CURRENT TYPE TYPE TYPE TYPE TYPE TYPE UNITS
VOLTAGE CURRENT 2N1487 2N1488 2N1489 2N1490 2N1702 40369
(VOLTS) (VOLTS) (mA) (mA)
VCB V C E VEB 'C >B MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
30 - 25 - 25 - 25 - 25 - 200 - 10 PA
'CBO
60 - - - - - - - - - 1000 - -
AtT c = 150°C 30 - 1000 - 1000 - 1000 - 1000 - 2000 - - pA
'ebo 6 - - - - - - - - - 100 - - HA
'ebo 10 - 25 - 25 - 25 - 25 - - - 6 AiA
V CEX 1.5 0.25 100

1.5 0.5 60 - 100 - 60 - 100 - - - V
1.5 1 60 b
v CEO (sus) 100 40 - 55 - 40 - 55 - 40 b - 55 - V
hFE 4 1500 15 45 15 45 25 75 25 75 25 75
4 800 15 60
20 5000 3.5
>'CE' sa, > 1500 300 2 2

1500 100 - - - 0.67 - 0.67 - Q.
800 80 : 4 ;
VB E 4 1500 3.5 ~ 3.5 — 2.5 — 2.5 - — 2.5
4 250 - 4 V
20 300 20.5
V CE (sat) 5000 2000 - - - - - - - - - 20 - - V
cob 40 200(typ.) 200(typ.) 200(typ.) 200(typ.) 200 (typ.) - - pF
T \
12 (typ.) 12 (typ.) 12 (typ.) 12 (typ.) 12 (typ.) - - ms
f
ab 12 100 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) - - - - MHz
f
hfb 6 100 - - - - - - - - 300 - - - kHz
28 0.5 1 (typ.) _ - MHz
# - -
td 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.)
V* 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) - - Ms
«s* 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) - -

tf* 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) - -
R 0JC - |
2.33 - |
2.33 - |
2.33 - |
2.33 - | 2.33 - - "C/W
* 2N-Series types in accordance with JEDEC registration data.

1
l
r = 1.5 A,I R = 300 mA, l„
,
= -150 mA
CMITTER OPEN.
I0 3 8 COILECTOR-T0 -BASE VOLTAGE
|
(VC B)-30V _
— r /
x
o <°i
2
^ I0
-
3*
»i°2^
ay %
V >
8
*'
1- , 8
1 6
6* '
175 200
92C3-IOM3
Fig. 7 — Typical collector-cutoff current

characteristic for 2N1487-2N1490, Fig. 8- Typical collector-cutoff current
and 40369. characteristics for 2N1702.
68
V 1 1
POWER TRANSISTORS
2N3054, 2N6260, 2N6261, 40250, 40372, 40910, 40911

Hometaxial-Base, Medium-Power Silicon N-P-N
Transistors Features:
Rugged Devices for Intermediate-Power Applications in

fy = 800 kHz at 0.2A (2N3064,
Industrial and Commercial Equipment 40372)
These RCA types are hometaxial-base Types 40250V1, 40372, 40910, and Maximum safe-area-of-operation
silicon n-p-n transistors intended for a 40911 are the 40250, 2N3054, 2N6260, curves for dc and pulse operation
wide variety of medium- to high-power and 2N6061 with factory -attached heat VcEV( sus > = 90 V min (2N3054,
2N3054, 2N6260, Types radiators intended for printed-circuit-
applications. 2N6261)
2N6261, and 40250 are supplied in board applications. Low saturation voltage: VcE(sat) =
the JEDEC TO-66 hermetic package. 1.0 Vat lc = 0.5A(2N3054)
40250 2N6260 2N3054 2N6261

Maximum Ratings, Absolute-Maximum Values: 40250V1 40910 40372 40911 Applications:
'
COLLECTOR-TO-BASE VOLTAGE V CB0
COLLECTOR-TO-EMITTER VOLTAGE:
Power switching circuits
'
With base open ^CEO Series- and shunt-regulator driver and
1
With external base-to-emitter output stages
resistance (R B e) = lOOfi Vcer(sus)
High-fidelity amplifiers
With base reverse-biased
(V BE = -1.5 V) V CEV (susl Solenoid drivers.
'
EMITTER-TO-BASE VOLTAGE V EB0
'
CONTINUOUS COLLECTOR
CURRENT tC TERMINAL DESIGNATIONS
•CONTINUOUS BASE CURRENT I
B
*TRANSISTOR DISSIPATION: PT
* At case temperature up to 25°C 29 29 25 50
(40250) (2N6260) (2N3054) (2N6261
At ambient temperatures up to 25°C 5.8 5.8 5.8 5.8
(40250V 1) (40910) (40372) (40911)

-
At temperatures above 25°C -Derate linearly to 200 C
JEDEC TO-66
'
TEMPERATURE RANGE: 2N3054. 2N6260. 2N6261, 40260
Storage & Operating (Junction) ....
At distance > 1 /32 in. (0.8 mm)

from seating plane for 10 s max. . . .
•In accordance with JEDEC registration data format JS-9 RDF-10 (2N3054), JS-6 RDF-2 (2N6260, 2N626D
JEDEC TO-66 with Heat Radiator

402S0V1, 40372, 40910, 4091
"I
CASE TEMPERTUREITC I.25"C
1
Tl 1
\ 90
2^
1
\
,
61-, 091
*| 80
T
1 !
ij 'CE 2*30 34-

»o60 "_ 403 ri- CEO
J
i
1
|
ti
i SO S«*j 60-
409 ci
" ,
v CE0
[
30
EXTERNAL BASE-TO-EMITTER RESISTANCE tR BE ) —O

IO0
(VCE )—
Fig. 2— Sustaining voltage vs. base-to-emitter
COLLECTOR-TO-EMITTER VOLTAGE 92SS-3363R2
2N3054, 2N6260,
resistance for
Fig. 1— Maximum operating areas for 2N3054 and 2N6260. 2N6261, 40372, 40910 and 4091 1.
69
1
POWER TRANSISTORS
2N3054, 2N6260, 2N6261, 40250, 40372, 40910, 40911

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tel ' 25°C un/ess otherwise specified

CHARACTERISTIC SYMBOL 2N6260 2N3054 2N6261 40250 UNITS
VOLTAGE CURRENT 40910 40372 40911 40250V1
Vdc Adc
VCE VBE c "B MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
" Collector -Cutoff Current: VCB = l
E = 1
With base open 'CBO 30

'CEO 30 - 1 - 0.5 - - -
60 0.5
40 -1.5 5
With base-emitter 80 -1.5 - - - 0.5 - - mA
'CEV
junction reverse-biased 90 -1.5 1.0
'CBO VCB = l
E = 5
30
40 -1.5 25
AtT c = 150°C 80 -1.5 - - - 1.0 - -
'CEV
90 -1.5 6.0
-5 - 5 - - - 5 mA
Emitter -Cutoff Current !EBO -7 1.0 0.2
Collector -to-Base
V (BR)CBO 0.05 - " - - - - 50 - V
Breakdown Votlage
Collect or-to-Emitter V (BR)CEV -1.5 0.05 50 - V
Breakdown Voltage
Sustaining Voltage:
With base open v CEO (susl 0.1 a 40 55 80 40 V

resistance (Ft be' = 100S2 V CER (sus) 0.1 a 45 60 85
Emitter-to-Base
Breakdown Voltage V IBR)EBO 5 - V
IE = 0.005 mA
2 4a 3 5
2 1.5 a 25 100
DC Forward-Current hFE 4 3a 5
Transfer Ratio 4 0.5 a 25 150
4 1.5 a 20 100 25 100
Collector-to-Emitter Vcg(sat) 0.5 a 005 a 1.0 ~
Saturation Voltage 1.5 a 0.15 a 1.5 - - 0.5 1.5 V
3a 1
a : 6.0
2 1.5 1.5
Base-to-Emitter Voltage VBE 4 1.5 - 2.2 " - - 2.2 V

4 0.5 1.7
Common-Emitter Small-Signal
Short-Circuit, Forward
Current Transfer Ratio f
hfe 4 0.1 0.03 " 0.03 - 0.03 - - - MHz
Cutoff Frequency
Small-Signal, Short-Circuit
Forward Current Transfer l"fel 4 0.1 2 - - - 2 - - -

Ratio (f « 0.4 MHz)
Common-Emitter, Small-
Signal, Short-Circuit h fe 4 0.1 25 25 - 25 - - -
Forward Current
Transfer Ratio (f = 1 kHz)
Forward-Bias Second 40 0.725

Breakdown Collector 'S/b 80 - - 0.625 - - - A
Current (t • 1 s) 55 0.455
Thermal Resistance: 6 (max.) 7 (max.) 3.5 (max.) 6 (max.)
Junction-to-Cate R0jc 2N6260 2N3054 2N6261 40250 °C/W
Junction -to-Ambient RfljA 30 (max.) 30 (max.) 30 (max.) 30 (max.)
40901 40372 40911 40250V
"Pulsed: Pulse duration ° 300 /is duty factor * 1.8%. *ln accordance with JEOEC registration data format JS-9 RDF-10 (2N3054) JS-6 RDF-2 (2N6260-61)
70
V
. POWER TRANSISTORS
2N3054, 2N6260, 2N6261, 40250, 40372,40910, 40911

. |
ill
1 1 1
^4-Tj MAX,.?O0*C
^jMAXÔCC
1
'X
»
NN s
*
!
I
i'°
s > -i£* IN,
a ' f$s a
\
«
v a
\ V
I *
t \
^%: I
\\ \
\
\
\
»« io»
NUMBER OF THERMAL CYCLES NUMBER OF THERMAL CYCLES 9JCS-I952I
»cs-,»21
Fig. 3 - Thermal-cycling rating chart Fig. 4 Thermal-cycling rating chart for Fig. 5 - Thermal-cycling rating chart for
for 2N3054. 2N6260. 2N626I.
CASE TEMPERATURE (T C I'2S*C
•n; 'I
~ - -
- :::: 3
1:11
2
+
nmmmm
'
• :'
i
MINIMUM (R BE 1000)
p= 3S i
; MINIMUM (RajE-lOa)-^
,
3
: ' K
i;;;i!!!il:-:iliii!|;:;:li!;:|:;::ii;;
3Hl : :
BASE-TO-EMITTER VOLTAOE (
B_ I —V
Fig. 7 • Reverse-bias second-breakdown

characteristics for all types.
COLLECTOR-TO-EMITTER VOLTAOE IVrrl -4V

CASE TEMPERATURE <Tc)'2S - C
14
a
- .2
\/
/
| 0.8
* - - 10 " "100 i
I
COLLECTOR— TO— EMITTER VOLTAGE (VCf£ ) V— o.«
9
COLLECTOR CURRENT (I c >— l»A »jcs-l2Mim
Fig. 6 Maximum operating areas for 2N6261.
Fig. 8 - Typical gain-bandwidth product
for all types.
COUIECTOR-TO EMITTED VOLTAGE [W**

•0
frifmtf" iff
1
1
• lllllllll|I^.CTgnffiii
I" HI III
16
SA3E-T0-EMITTER VOLTABCIVgjI V
as 1.0 1.5 2.0 2.9
BASE-TO-EMITTER VOLTAGE (VgE>~ v COLLetTOR-TO-EMITTCR VOLTAOE (V«)-V
Fig. 9 - Typical input characteristics for
2N3054, 2N6260, 40250, 40250V I, Fig. 10 - Typical input characteristics for Fig. 11 — Typical output characteristics for
40372. and 40910. 2N626I and 40911. 2N3054 and 40372.
71
. !
POWER TRANSISTORS
2N3054, 2N6260, 2N6261, 40250, 40372, 40910, 40911
20 JO 40 90 to
COLLECTOR- TO-EMITTER VCLTME (V C£ -V
)
COLLCCTOR-TO-EMITTtR VOCTMl ( V a ) - V
tes-mwt
Fig. 12— Typical output characteristics for Fig. 13 — Typical output characteristics for Fig. 14 — Typical transfer characteristics for
2N6260 and 40910. 2N6261 and 40911. 2N3054, 2N6260, 40250,
40250V1, 40372 and 40910.
COLLECTOR-TO-EMITTER V0LT40E (V
CE >-4V
•a 200
1 1
1
9
% i*o
., ,25-C
i
3 *° ~4
&
<g
c
i .0
|
« o
* *
MSE-TO-tMITTER VOLTME IV K )-V 0.601 001 LI .0
COLLECTOR CURRENT (I<;>—»

szcs-aswm
Fig. 15- Typical transfer characteristics for Fig. 16 — Typical input characteristics for Fig. 17 — Typical dc beta characteristics for
2N6261 and 4091 1 2N6260, 40250, 40250V 1, 2N6260 40250, 40250V 1 and
40372 and 40910. 40910.
COLLECTOR- TD-EMITTER VOLTAGE (V CE >- 4V

COLLECTOR-TO-EMITTER VOLTAOE !VCE I- 4V
y 20
1,
-5,100 "
I
*
' t"
U<
s
">
s
V
£
g eo A.Uu
-'
*\
c \
Ik
5 n \^ | 60 '*Lî
E
A *v
ty
E
,4 M
<*^
«
I
S
4 \\
£ 40
'
| 24 s
zo
\\
f
S ^ \
8 - ... 8 o - .....
COLLECTOR CURRENT (I c >-A COLLECTOR CURRENT (I(;l-A
Fig. 18 Typical dc beta characteristics for

fig. 19 — Typical dc beta characteristics for
2N6261 and 40911. 2N3054 and 40372.
72
POWER TRANSISTORS
2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955

Silicon N-P-N and P-N-P Epitaxial-Base High-Power Transistors
Rugged, Broadly Applicable Devices Features:
For Industrial and Commercial Use High dissipation capability
The RCA-2N6594, BDX18, MJ2955, and and 150 watts (MJ2955) at case temperatures Low saturation voltages
RCS618 are epitaxial-base silicon p-n-p tran- up to 25°C. Maximum safe-area-of-
sistors featuring gain at high current. The They differ in voltage ratings and in the operation curves
RCA-2N6569, 2N3055, and RCS617 are currents at which the parameters are con- Hermetically sealed JEDEC
epitaxial-base silicon n-p-n transistors. They trolled. All are supplied in the steel JEDEC TO-204MA package
may be used as complements to the 2N6594, TO-204MA hermetic package. High gain at high current
BDX18 or MJ2955: and RCS61 8, respectively. The 2N3055 is also available in a hometaxial- Applications:
These devices have a dissipation capability of base version. To obtain the hometaxial-base Series and shunt regulators
100 watts (2N6569and2N6594), 115 watts type order the 2N3055 (Hometaxial).
(2N3055, BDX18, RCS617, and RCS618), Power-switching circuits
Solenoid drivers
MAXIMUM RATINGS, Absolute-Maximum Values:
N-P-N 2N6569 2N3055 RCS617 TERMINAL DESIGNATIONS
P-N-P 2N6594* BDX18* RCS618*
MJ2955* c
(FLANGE)
45 100 100 V
R BE = 100 si. 45
40
85
80
V
V
o o
5 7 V
12 15 A
JEDEC TO-204MA
24 A
5 A
17 A
:::! It::
150 (MJ2955)
AtT c <25°C
I
\ 115 (Others)
W
0.86 (MJ2955)
At TV>25°C Derate linearly J 0.66 W/°C
\ 0.66 (Others) " IOO
Tctn- Tl -65 to 200 °C

5uj80
At distanced 1/32 in. (0.8 mm) from seating £§60

plane for 10 s max
° 40
<^ *>>„'
* 2N-types in accordance with JEDEC registration data.

Iv'V
* For p-n-p devices, voltage and current values are negative. 5 20
Fig. 1 — Derating curve.
100 150
100
1
6 - 1 1 1
sTj MAX-200*C
S^-T (MAX)- 200'C 1
"> °^
T J MAX. -2 0CC *
'"S^ * e
* -->> -
— —
1
I >w e
"x.^.
1
N§5 ^% ^*J
X
*\, '
'
8 I * °A
*
1
\
\ s
X o *
'
1
&»
X
\
^^ —
"*•/
<?,
Ul 2 -
>§v £ i- t*» 3. 1
X fc
*
10 n\ NUMBER OF THERMAL CYCLES

K>«
10
fc\
Y
NUMBER OF THERMAL CYCLES

Xf
M V
1i
\°
MBER OF THERMAL CYCLES

«CS-
Fi9- 2 — Thermal cycling rating chart for 3— Thermal-cycling rating chart for 2N30SS, Fig. 4 — Thermal cycling rating chart for
Fig.
2N6S69 and 2N6594. MJ2955.
BDX18, BCS617and RCS618.
For p-n-p devices, voltage and current values are negative.
73
t V
POWER TRANSISTORS
2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955

ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 2&>C Unless Otherwise Specified _ J60 COLLECTOR-TO-EMITTER VOLTAGE (V CE )-4V
CASE TEMPERATURE {T C )-25"C
TEST CONDITIONS LIMITS "300 I

IN 1
III
'
VOLTAGE CURRENT 2N6S69 2N3066 RCS617 X

CHARACTERISTIC BDX18* UNITS 2 240
Vdc Adc 2N6S94« MJ2955* RCS618*
VC E VB E I
'c •b M)N. MAX. MIN. MAX. MIN. MAX. *- ISO
z
45 -1.5 1
K
3 120
'CEX 2N3055, 8DX18 100 -1.5 - 5 X I
MJ2955 100 -1.5 - 1

- mA
\
60
RCS617, RCS618 100 -1.5 §
1
S
I
CEX ,T C =100°C -1.5 - 10 - - - - mA
Jll
ICEX' MJ2955 100 -1.5 — - 5 5 COLLECTOR CURRENT (I r l
— A
T C =150°C 2N3055 100 -1.5 - -

30
mA Fig. 5— Typical dc beta characteristics.*
BDX18 60 -1.5 10
30 '- 0.7 - 0.7* - 0.7 mA

'ceo t COUKTOH-TO-IMITTCR VOLTAOf (Vcc ) • 4 V
CASE TEMKRATURC (Tc IVC )
5 5 7
'ebo i
2N3055, BDX18 7 - 5 -
-
mA
MJ2955 7 5 £
RCS617, RCS618 7 1
V CE0 (sus) 0.2 40b 60b 80b V

X
V CER (sus)
0.2 45b 70b* 85b - V
R BE = 10012
1 1
hFE 3 4a 15 200
4 4a 20 70 !
4 5a 20 70
,
• 4
Except BDX18 4 10a 5 COLLECTOR CURRENT —A

(
c) tics-MOO*
4 12a 5 100
Fig. 6— Typical gain-bandwidth product.*
4 4a 1.8* 1.8*
VBE V
4 5a 1.8
4 055 2
V BE (satl V
4 04 2
V CE (sat) 4a 04 1.5 1.1

4a 055 1.5
5a 05 1.1 V
2N3055only 10a 33 8
MJ2955 only 10* 33 3
12a 24 4
f
T 2N6569 4 15
MHz
f = 05MHz 2N6594 4 2.5 _
f
hfe 2N3055 4 20
kHz 8ASE-T0-EMITTER VOLTAOE (V<E )-V
f = 10 kHz MJ2955 4 10
|h
fe | f = 1 MHz 4 -
25 25 - Fig. 7 — Typical input characteristics*
MJ2955 (only) 4 0.5 4
h fe
f = 1 kHz 4 1 15 . 15* 1
20* 15 _
!
S/b 40 - - -
tp = 1 s nonrep.
2.5 2.87 2.87 A
c obo
75 750 - - - - pF
V CB =10V,f= 1MHz
2 0.2 - 0.4 - - - -
'd v cc = 30 V
1 = 2 0.2 - 1.5 - - - -
'SI 'bS Ais
t
s 2 0.2 - 5 - - - -
l
f 2 0.2 - 1.5 - - - -
io to so 40 so ao to ao to too
2N3055.BDX18 1.5 - COLLICTOR-T0-EMITTER VOLTAOE IVet )-
R 0JC - 1.75* - - °C/W 9tCS-2tOO«
MJ2955 1.17
* For p-n-p devices, voltage ind current values are nagativt b CAUTION: Sustaining voltages V ce q(jusI and Fig. 8— Typical output characteristics*
* 2N typai in accordance with JEDEC rtgiitration data. >(sus) MUST NOT be measured on a curvt
' Pulttd; pulu duration » 300 mi. duty factor • 1 .8%.
•For p-n-p devices, voltage and current values are negative.
74.
V
POWER TRANSISTORS
2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955
" ' - J ' .

- - |000
10 IOO
COLLECTOR-TO-EMITTER VOLTAGE (V CE )- V 92 cs-2900IRI
Fig. 9 — Maximum operating areas for 2N3055 and RCS617.
COLLECTOR-TO- EMITTER VOLTAGE (VCE ) —

92CS -29002
Fig. 10 - Maximum operating areas for 2N6569 and 2N6594*
75
-
POWER TRANSISTORS
2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955

CASE TEMPERATURE(TC )^25 # C
(CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE)
' " D ' " "

I "Id °IOO
COLLECTOR- TO-EMITTER VOLTAGE (V )-V
CE
92CM- 30558
Fig. 11 — Maximum operating areas for BOX 18. MJ2955 and RCS618*
^
i l0
?
l
OLLECTOR- TO- EMITTER VOLTAGE (V CE )-4 V B
[l| I
ptji
W
p*
j ill!?
in
jii
5 * 90
1 1
100 CASE
Vcer(ui)
TEMPERATURE
II!
<T c )-25' C
III
"CS6I7
"CS6/8
1
V CE0 Uul)
III
n #n fl 80 1
'itji
HfHilSl
~ {{jfflttif
1
\
ptf
::: iztz
Cu
o 3
70
vcepl.0.)
J!
**
1
fc *(*;:| J ?9
55
*CEO< .1,
? l
? • fr
ii «,
s i *J ; ii Sg
3 z
8
| :[ll
§< *>
zi
I
S is
Vcer(wi) 1
69
94
— V ce0 <im)
40 T
30
BASE-TO-EMITTER VOLTAGE -
2 4 68 2 4 68 2 4 66 2 4 68 2
(V BE )
10 KDO IK IOK KXW
—Q
I
EXTERNAL BASE -TO -EMITTER RESISTANCE <R BE >
92CS-29008R
F/flr. 72- Typical transfer characteristics/
Fig. 13 - Sustaining voltage vs. base-to-emitter
resistance.*
76.
. A I
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251

Hometaxial-Base High-Power Features:
2N6254: premium type from 2N3055

Silicon N-P-N Transistors (Hometaxial) family
Maximum safe-area-of -operation curves

Rugged, Broadly Applicable Devices
Low saturation voltages
For Industrial and Commercial Use
High dissipation capability
Thermal-cycling rating curves
The RCA-2N3055 (Hometaxial)*, 2N6253, plied in JEDEC TO-204MA hermetic steel
2N6254 and 2N6371 are silicon n-p-n tran- packages.
sistors intended for a wide variety of high-
The 2N3055 is also available in an epitaxial- Applications:
power applications. The hometaxial-base con-
base version. To obtain the hometaxial-base
struction of these devices renders them highly
type described in this data sheet, order the Series and shunt regulators
resistant to second breakdown over a wide
2N3055 (Hometaxial).
range of operating conditions. High-fidelity amplifiers
These devices differ in maximum ratings for Formerly 2N3055H.

Power-switching circuits
voltage and power dissipation. All are sup-
Solenoid drivers
Low-frequency inverters
2N3055
2N6253 2N6254 2N6371 40251 TERMINAL DESIGNATIONS
... ...
(Hometaxial)
c
* v CBO •
; 10 ° 55 10 ° 50 50 (FLANGE)
* v cer' sus *
R BE = 100fi 70 55 85 45
— V
* v CEO (sus) 6° 45 80 *° 40 V
V CEV (sus)
V BE = -1 .5 V 90 55 90 50 50 V
*
*
*
V EB0
l
'B
c
<25°C
••
7
15
1 111
5
15
115 115
7
15
5
15
150
15
5
7
V
A
A
JEDEC TO-204MA
>25°C Derate linearly to 200°C

* T,,-^ -65 to +200
* T|_: During soldering, at distances
1/32 in. (0.8 mm) from seating
plane for 10 s max — 235
*ln accordance with JEDEC registration data formats JS-9 RDF-10; 2N3055 (Hometaxial)
JS-6 RDF-2; 2N6253, 2N6254, 2N6371
COLLECTOR-TO-EMITTER VOLTAOE (Vce)'4V

COLLECTOR-TO-EMITTER VOLTAGE (VCE >'«V
_ 80
5_
J Y"" .r'v
i
L6
S
* 60
s
<fS $T
t
l2
i -<£"f S"S
t - C# v\
z
•to
i H I
y
8-
n fc
<;»
mi i ii
1
<
a<*
£
i
o
20
q
rv
N
\
S
29 50 73 100 129 190 179 200

—- i I —J-
CASE TEMPERATURE <TC ) — 'C COLLECTOR CURRENT (!<;)—
COLLECTOR CURRENT (I c l-A
9fcs-»:
Fig. 2— Typical gain-bandwidth product Fig. 3— Typical dc-beta characteristics for

Fig. 1 — Current derating curve for all types. for all types. 2N3055 (Hometaxial) and 2N6371.
77
.
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251

ELECTRICAL CHARACTERISTICS, Tq = 25°C Unless Otherwise Specified.

CHARACTERISTIC VOLTAGE CURRENT 2N3055(Home-
Vdc Adc taxial) 2N 5253 2N 3254 2N6371 4Q251 UNITS
V C E V B E ic >B MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN MAX.
25 - 1.5 - - 1.5 - -
ICEO 30 - 0.7 mA
60 1
40 -1.5 2
!CEX 45 -1.5 - - - - 2 -
55 -1.5 2
100 -1.5 5 0.5 mA
40 -1.5 _ ~ 10 _ 10
TC = 1 50°C 50 -1.5 10 - -
100 -15 30 5
!EBO -5 - - 10 - - - - - mA
-7 5 0.5
v (BRICBO 0.1 50 - V
V (BR)CEV -1.5 0.1 - - - - - - - - 50 - V
v (BR)EBO
5 - V
l
E = 0.01 mA
V CE0 (sus) 02 a 60 - 45 - 80 - 40 - 40 -
V CER (sus)
02 a 70 - 55 - 85 - 45 - - - V
RgE = 100^2
V CEV' SUS ' -1.5 1
a 90 - 55 - 90 - 50 - - -
"FE 4 3a 20 70
4 4a 20 70
2 5a 20 70
4 8a 15 60 15 60
4 10 a 5
4 15 a 3 5
4 16 a 4
VBE 4 3a 1.7
4 4a 18
2 5a " " 15 - V
4 8a _ _ 22
4 16 a 4
V CE lsat) 3a 03 a 1
4a 04« 11
5a 05a 0.5 -
8a 0.8 a 1.5 1.5 V
10 a 33 a 8
15 a 3a - - - 4 -
15 a 5a 4
16 a 4a 4
h fe
4 1 15 120 10 - 10 - 10 - - -
f = 1 kHz
'T 1 800 - - - - - 800 - - - kHz

Ihfel
4 1 - - 2 - 2 - 2 - - -
f = 0.4 MHz
f
hfe 4 1 10 - 10 - 10 - - - - - kHz
'S/b 39 3
t
p 1 s = 40 2.9 2.9 -
nonrep. 45 - 2.55 - - - A
60 1.95
80 1.87
H0JC - 1.5 - 1.5 - 1.17 - 1.5 - 1.5 °C/W

* In accordance with JEDEC registration data formats JS-9 RDF-10: 2N3055H; JS-6RDF-2: 2N6253, 2N6254, 2N6371
a Pulsed : Pulse duration = 300 /is, duty factor = 1 .8%.
78.
A A
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251
COLLECTOR-TO-EMITTER VOLTAOE (V C E>'« V

CAM TEMPERATURE <T C )»28*C *u 90
(CURVES MUST SC DERATED LINEARLY
'
WITH INCREASE IN
I
^
—• "f"' ^
<
."" *^
S
.S 1
/
§ to
/*
.
fO^L
Sv*
lk T^»*
C
^X \
O <£j
\ s>.
i V
>
8 o
'
• •
COLLECTOR CURRENT U c )—
Fig. S— Typical dc-beta characteristics for 2N62S3.
COLLECTOR-TO-EMITTER VOLTAOE (Vf») IV

Tg 100
,i
|.o
S,* *
*.' V \
& 1^
P-
a
40
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V
1
o
\
s
•2II-33«4R3 \
1 ao
8 o
Fig. 4 - Maximum operating areas for 2N62S3 and 2N30S5 (Hometaxial).
.
' • •
n
COLLECTOR CURRENT (I c l —
»2CJ-H4«S
Fig. 6— Typical dc-beta characteristics for 2N62S4.
ISO I
CASE TEMPERATURE (TC )*25*C '>< T J MAX. • ZOO*

>
(CURVES MUST BE DERATED LINEARLY! • ^r^-
J.
x>.
3 , <S
i
s
s xj
- w
I
^v ^
v.
fr\
I0
4 i a
10
s
t * •
»•
NUMBER OP THERMAL CYCLES
ttcs-toaso
Fig. 8— Thermal-cycling rating chart for
2N30SS (Hometaxial). 2N6253
and2N6371.
—IW 1 1
/Tj MAX.-MO'C
k
y 100'
1
•
i VSi,
%^r v
2 iS
ft*.
" "
5 * 1
\ sS
I ' 10
COLLECTOR- TO- EMITTER VOLTAOE (VfcjHV I |
*S»y
^
t2CS-l»4SSAI
15
I
V
M-
As c ^
Y
• • • ,o» » * • • 10* »
Fig. 7 — Maximum operating area* for 2N62S4. NUMIER OF THERMAL CYCLES
F/y. S— Thermal-cycling rating chart for

2N62S4.
79
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251
Fig. 10 — Maximum safe-area-of-operation at case temperature of 2&> Cfor 2N6371.
COLLECTOR -TO- EMITTER VOLTA8E (Vc£>— V
Fig. 11 — Maximum safe-area-of-operation at case temperature of 10<fiC for 2N6371.
80.
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251
I 1.8 2 2.8 8
BASE-TO-EMITTER V0LTA8E (Vgp;)— BASE-TO-EMITTJER VOLTAOEIVgjI—
9tC«-lt441 MCtHUOm
BASE-TO-EMITTER VOLTAGE <Vbe>— V -
92CS-I232«ftl
Fig. 14 Typical inpiit characteristics for
Fig. 12 — Typical transfer characteristics for Fig. 13 — Typical transfer characteristics for
2N3055 (Hometaxial), 2N6371
2N62S3, 2N3055 (Hometaxial). and 40251.
2N6254.
2N6371 and 40251.
COLLEC TOR- rO-EMITTER VOLTAGE (Vce>'^ V^Hlllllilllllllllllll
li;|.lii||t}jp /JjI'^Hf
! I I : : I
[
I
'«yymffi*>S6
„ 0.8
x
WhB
z
0:
3
<
0.4
tj'itiftnj'jffi
MM
i^/IKfl'PhiPI
yifflTElHTlPi
TAfl 1 1 1 1
1 '
' 1
1
' 1 II 1 1
1
1 1
[
« 0.2
0.8 I
BASE-TO-EMITTER V0LTA8E VgE < > —

92CS-I9440
Fig. 15— Typical input characteristics for Fig. 16— Typical input characteristics Fig. 17 — Typical output characteristics for
2N6253. for 2N6254. 2N3055 (Hometaxial) and 2N6371.
CASE TEMPERATURE (T C I-2S # C CASE TEMPERATURE <Te )'2S*C

100
>
£i 1 so
VC ER •all
z m
ST -^ veto <••»>
7 «> VCER 1 u«)

* a 480- s¥ TO
5-
K 7.8 T'Tr"
s *8*f.„ VCEO •M)
ds 80 VCER ml
Is âj
t "i
1 1 1
:baSE CURRE ht (i B )-e n'm*| m^*|| JcerI— >

**ejy VC(0»»j>
(,| | |
VcEo""''
1,8 i »40
|
i |
1
6 6 S 6 9 I • •
SO
20 40 90 SO 70 80
collector-to-emitter voltase ivce i—
92CS-I9439
Fig. 18 — Typical output characteristics for Fig. 19 — Typical output characteristics

Fig. 20 — Sustaining voltage vs. base-to-emitter
2N6253. resistance for all types.
for 2N62S4.
81
POWER TRANSISTORS ±.
2N3263-2N3266
Features:
High-Power, High-Speed, High-Current Low saturation voltages -
2N3263 and 2N3265
VcE(ut) - 0.75 V (max.) A
Silicon N-P-N Power Transistors VBE<*at) - 1-60 V
at lc • 15
(max.) at lc - 15 A
2N3264 and 2N3266
Epitaxial Types for Aerospace, Military, and Industrial Applications
Vce <««> 1-20 V (max.) at lc- 15 A
Vbe (»") 180 V (max.) at lc " 16 A
High reliability and uniformity of characteristics
RCA-2N3263, 2N3264, 2N3266, and 2N3266* are n-p-n Typical high-speed switching applications fir these transis-
High power dissipation
epitaxial silicon power transistors designed for high-reliability tors Include switching-control amplifiers, power gates,
Fast rise time at high collector current -
aerotpace, military, and industrial equipment. Their high switching reguletors, dc-dc converters, and dc-ac inverters.
0.2 ms at 10 A (typical)
current-handling capability and fast switching speed make Other recommended applications include dc-rf amplifiers and
them desirable In applications where high circuit efficiency is
power oscillators,
required.
• Formirly RCA Dev. Not. TA2492. TA2493, TA2494, and TA249S,
The 2N3263 and 2N3264 are sealed in flat 3/4-inch- raipactlvely.
diameter packages with radial leads. Types 2N3265 and

2N3266 utilize the JEDEC TO-63 package.
MAXIMUM RATINGS, Absoluta-Mtximum Valuts:

2N3264 2N3263
2N3266 2N3266
'
COLLECTOR-TO-BASE VOLTAGE VcBO 120 150
With 1.5 volts (Vbe) of reverse bias VcEX(» u| ) 120 150
With external base-to-emitter resistance (Rbe) S 60J1 VcER(sus) 80 110
'
With base open VCEO * sus ' 60 90
'
EMITTER-TO-BASE VOLTAGE V£BO 7 7
'COLLECTOR CURRENT IC 25 25
'BASE CURRENT IB 10 10
'
TRANSISTOR DISSIPATION Pt £m Figi. 1&2
'TEMPERATURE RANGE:
Storage and opereting (Junction) 65 to +200
LEAD TEMPERATURE (During soldering):
At distance ^ 1/32 in. (0.8 mm) from seating plane for
10 s max 2N3266, 2N3268

IJEOEC TO-63)
'
In accordance with JEDEC regiitration data format.
POX MAXIMUM CMC TfMWUTVMCS ACOVE 7e*C
12!;
5" :
amnee tttttt
MA *c eo-eov H±H±
-SB
i:|
1 1 1 1 1 1 1
1 max. vcto-eov-i
• 9 l<SO
»o eo 70 lo so «o so so to ao »o
C0UJtCTOR-T0-EMltTea VOLTAO* Nci>— COLLECTOR-TO-EMITTER VOLTA8E COLLECTOR-TO-EMITTER VOLTAGE (VCE 1—
<VfcE>—
»ZCS-IZ4UM 92CS- '2428*1
atca-iwsow
Fig.3— Safe-operating region as a function

Fig. 1 -Rating chart for 2N3265 and 2N3266. Fig.2-Rating chart for 2N3263and 2N3264. of pulse width.
CASE TEMPERATURE (Tc )>!9'<

.
| {ollSctor^to-emitter voltaoe (VceI-j
^ i55
l000 a
I
_.
$ no 1 <
t
«
,vs
1 I00 :
Sjaj «•
|
j5
2N3 2*5 1 ! êti
I
100 -£*
1
£
7- s 1 *
g
eo 3X*« 1* 8NS846
1
II
1 m
14
4 1 a
10
1
EXTERNAL eASE-TO- EMITTER RESISTANCE

a a 1 4 i
10
s
(Rge)
10*
—»K>-it««
fl
d»
L rV —CT ^lj -
i i"" i i r
BASE-TO-EMITTER VOLTAOE IVj[l—
_"
! 4 I.I
BASE-TO-EMITTER VOLTAGE (Vaal—
Fig. 4— Typical sustaining voltage vs. base-

to-emitter resistance. Fig. 5— Typical input characteristics. Fig.6—Typical input characteristics.
82
. A 4 — V
.POWER TRANSISTORS
2N3263-2N3266
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tg) * 25PC unless otherwise specified i 3
1
VOLTAGE CURRENT 2N3264 2N3263 z 2
CHARACTERISTIC SYMBOL UNITS
Vdc Adc 2N3266 2N3266 |
Vcb VCE VEB >E IB "C MIN. MAX. MIN. MAX. I ,
Collector Cutoff Current: 60 - 10 - |

With emitter open <
80 4
•CBO
60 - 10 - 1 o
AtTc- 125°C mA
80 4
With base reverse- 120 1.5 - - 1
'CEX 20
biased 150 1.5 20
Emitter Cutoff Current: 7 _ 15 _ 6
AtTc="125°C EBO 7 _ _ mA §
15 5
-2
Emitter-to-Base Voltage VEBO 0.02 7 _ 7 _ V
Collector-to-Emitter BIAS RESISTANCE (Rbe> —1
Sustaining Voltage: 92CS-I2445RI
VcEO(sus)*
With base open 0.2 60 90
Fig. 7— Typical change in £5/*, as a function
With external base-to- V of base-to-emitter resistance.
emitter resistance VcER(sus) # 0.2 80 - 110 -
(RBEK 50 n
2 20 - 1.6 - 1
VcE(sat)* V
Saturation Voltage 15 COLLECTOR-TO-EMITTER VOLTAGE (Vc El" 3 V
1.2 1.2 0.75
Base-to-Emitter 2 20 - 2.2 - 1.8
VflElsat)* V
Saturation Voltage 1.2 15 1.8 1.6
< 10-
3 5 35 40
DC Forward Current
h FE « 3 15 20 80 25 75 fy.
Transfer Ratio
/
Second-Breakdown
2 15 20 55
« '°J
J
Collector Current:
A <?£
(See Fig. 3)
DC forward-biased
IS/b
50
75
700 - -
mA I ; 1 I
350 d o.i - S- f
8
Pulsed, forward- *-J /
biased, tp - 250 ms 75 13.3 - 13.3 - A %A / /
34 / /
Second- Breakdown Energy
With base reverse-
0.01
v J 0.4 0.6
'
OS 1.0 1. 2 4 i.c
E S/b" 6 10 2 - 2 - mj BASE-TO-EMITTER VOLTAGE (Vbe>-
biased, and
RBE-20JJ. L = 40mH
Saturated Switching Time:
Fig. 8— Typical transfer characteristics.
tON 1.2* 15 - 0.5 - 0.5

Turn-on +
V CC =
(td tr )
30 MS
Storage «s 1.2* 15 _ 1.5 _
Fall - _
1.5 cot 4.EC roR- TC- EMITTER VOL rAGE (VC hv ;
tf 1.2* 15 0.5 0.5

Gain-Bandwidth Product ~: :::: ^:i
(f - 1 MHz)
*T 10 3 20 - 20 - MHz
ili£ -
Collector-to-Base Feedback :::.
f"
Capacitance ]-
(f - 1 MHz) Cob 10 _ 500 _ 500 PF T

::::
^
A H**
::•:
Thermal Resistance 2N3263 2N3266 " s? :::: .-::; :i3

(Junction-to-Case)
R9JC 2N3264 2N3266 °C/W •3 •:• -.'
1 :: :•:!
10 - P-'z
10 | 1.5 - I 1 3 io ...
::!
w
_.. ::;: ':':::
In accordance with JEDEC registration data format. g Ji
• Pulsad; pulsa duration ^
3SO lit, duty factor <£ 7%. CAUTION: Tha sustaining voltagw V CEO (sus) and V
CER (sus> MUST NOT ba maaauw jT:
— \± Nil:?!?
on a curva tracar. Thaaa sustaining voltagss should ba maasurad by maans of last circuit S
H i-t
p --.I Tfl
!!!!
*
# <S/b
'• dafinad as tha currant at which sacond braakdown occurs at a apacif lad collsctor voltaga.
Eg/b is dafinad as tha anargy at which sacond braakdown occurs undar spacifiad rsvarsa bias conditions. E s/b - 1/2 LI 2 whara L is a sarlas
load or laakags inductanca and Is tha collactor currant
I
,
I
H f-trr
4 A< 2 4 i.<
•la. -la-
i I
BASE-TO-EMITTER VOLTAGE (VBEl—
Fig.9— Typical transfer characteristics.
I0 ,h PERCENTILE. Rbe'20 OHMs

22
COLLECTOR SUPPLY VOLTAGE (Vc c |.SOV -2
IC'B.SI B| -l2.SI ei 20 ^JoV-
I.4
s_ < IB
I.2 \S I I*
rsc*>,
s ^ *,
° 12
p J*
<v
i »
8 f-
I 0.4
**»
—
"
1
*
<
£
6
4
h
(««,.
V
02
V
V
2
2
* 8
I
< 69
K oo
COLLECTOR CURRENT (Ic> —A COLLECTOR CURRENT (Ifi >—
1 3
INDUCTANCE pM
100
92CS-I2429M 92CS-I2446RI
Fig. 10— Typical dc beta characteristics Fig. 1 1 — Typical saturated-switching charac- Fig. 12— Collector current as a function of
(median values). teristics. inductance (50th percentile).
83
1 2
POWER TRANSISTORS.
2N3439; 2N3440; 2N4063; 2N4064; 40385;

40346, V1, V2; 40390; 40412, V1, V2
High-Voltage Silicon N-P-N Transistors Features:
High voltage ratings:
For High-Speed Switching and Linear-Amplifier Applications v CBO = 450 v max (2IM3439, -
2N4063)
These RCA types are epitaxial-base silicon indicator and NIXIE* driver circuits and = 300 V max. (2N3440,
n-p-n transistors with high breakdown in differential and operational amplifiers. 2N4064)
voltages, high-frequency response, and fast Types 404 12, 4041 2V1, and 40412V2 are V CE0 (sus) = 350 V max. (2N3439,
switching speeds. These transistors are especially suited for class-A ac/dc audio- 2N4063)
intended for industrial, commercial, and amplifier service. = 250 V max. (2N3440,
military equipment. Typical applications 2N4064)
These transistors are supplied in JEDEC
include high-voltage differential and oper- Maximum-area-of-operation curves
TO-39 hermetic packages TO-39 or in the
ational amplifiers, high-voltage inverters,
package with factory-attached mounting Low saturation voltages
and high-voltage, low-current switching Planar construction for
flange or heat radiator.
and series regulators. low noise and low leakage
• Nixie is a Registered Trademark of Bur-
Types 40346, 40346V 1, and 40346V2 are roughs Corporation, Electronic Components
especially useful Division, Plaint ield, N.J.
in such devices as neon
High reliability assured by five
preconditioning steps
Group A test data in data File 215
2N3439 2N3440 40346 40412 TERMINAL DESIGNATIONS

2N4063 2N4064 40346 V 40412V1
MAXIMUM RATINGS, Absolute-Maximum Values: 40385 40390 40346V2 4041 2V2
"COLLECTOR-TO-BASE VOLTAGE V CB0 450 300 - -
COLLECTOR-TO EMITTER VOLTAGE:
With external base-to-emitter resistance
(R BE ) = 1.000ft V CER (sus)
= 10,000f2 V CER (sus)
* With base open Vq E q(sus) 92CS-27512
•EMITTER-TO-BASE VOLTAGE V EB0 JEDEC TO-39
'CONTINUOUS COLLECTOR CURRENT ... I
c 2N3439.2N3440.4034E
"CONTINUOUS BASE CURRENT I
B 0.5 0.5 0.5 A 40385.4041
TRANSISTOR DISSIPATION: PT
10I2N3440) 10(40346) 10(40412) W
At case temperature up to 25°C
10I2N4064) 10I40346V2) 10I40412V2) W
At free-air temperatures up to 25"C (40385) 3.5(40390) 4I40346V1) 4I40412V1) W
At free-air temperatures up to 50°C .... (2N3439) K2N3440) 1(403461 1(40412) W
At free-air temperatures above 25°C or 50°C — Derate linearly to 200°C
"TEMPERATURE RANGE:
Storage & Operating (Junction) -65 to 200
'LEAD TEMPERATURE (During soldering):
At distances > 1/32 in (0.79 mm) JEDEC TO-39 with Flange
2N4063.2N4O64.40346V2,
from seating plane for 10 s max
4041 2V2
NOTE: P T value of 10W at T c - 25°C and lead temperature of 255°C i data for 2N4063 and 2N4064 only
HEAT
c RADIATOR
ItMOUNTING
TABS
COLLECTOR-TO-EMITTER VOLTS IV^l-lut,
S l«0
CASE TEMPERATURE (T C )-25*C

9
» /
J
o;
£ ioo r £so -
I
•&A
it "o K
= 25 \
1 60
< *% 1 20
ft \ \
40 <* . I 15 \
s \
4-t
<A
2 20 AvS I.o \
\
is"
Z 5 \
I L ',00 ^1x» 1
COLLECTOR CURRENT Uc^-mA COLLECTOR CURRENT tl c l — WLLI»MPERES t •

1
•
92L3-I9M 92CS-IZ6
COLLECTOR CURRENT (I,) — mA

Fig. 1 — Typical dc-beta characteristics for Fig. 2— Typical dc-beta characteristics for C 92LS-I591
2N3439, 2N3440, 2N4063, 40346, 40346V1. 40346V2, Fig.3— Typical gain-bandwidth product for
2N4064 and 40390. 40412, 4041 2V1 and 4041 2V2. all types.
84
1
POWER TRANSISTORS
2N3439; 2N3440; 2N4063; 2N4064; 40385;

40346, VI, V2; 40390; 40412, VI, V2
ELECTRICAL CHARACTERISTICS, Case Temperature (T ) = 25° C, Unless Otherwise Specified
c
LIMITS
VOLTAGE CURRENT 2N3439 2N3440 40346 40412
CHARACTERISTICS SYMBOL 2N4063 2N4064 40346 V 4041 2V1 UNITS
V dc mA dc
40385 40390 40346V2 4041 2 V2
VC E vBe 'c MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Collector-Cutoff Current: 100 - - - 5 - 5

With base open
'CEO 200 - 50
300 20
200 - 1.5 10 MA
With base reverse-
300 - 1.5 - - 500 - - -
biased:
!
CEV 450 - 1.5 500
150 - 1.5 2
AtT c = 150°C mA
200 - 1.5 1
With R = 10,000 ohms 'CER 100 - - - - - — — 1 mA

Collector-Cutoff Current 250 - — 20C — — — —
'CBO 360 20C juA
-3 100
Emitter-Cutoff Current
'ebo -4 - - - 5 - MA
-6 20 20
10 2 30
DC Forward-Current
h FE 10 10 25 - -
Transfer Ratio
10 20 40 160 40 160
20 30 40
Sustaining Voltage: V CE0 (sus) 50 350
a - 250 a - - - - -
With base open
Sustaining Voltage:
V
With external base-to-
emitter resistance
R BE = 1,000 ohms V CER(sus) 50 - - - - 175 a - -
R BE = 10,000 ohms V CER(sus) 50 250 a
Base-to-Emitter Voltage V BE 10 10 - - - - - 1
- - V
Base-to-Emitter
Saturation Voltage V BE (sat) 50 - 1.3 - 1.3 - - - - V
lg = 4 mA
Saturation Voltage V CE (sat)
l
B = 1 mA 10 - - - 0.5 - 0.5
V
lg = 4 mA 50 0.5 0.5
Small-Signal Forward-
Current Transfer Ratio: h fe 10 10 3 - 3 - 2 - 2 -
f=5MHz
Output Capacitance: -
c ob 10 - 10 - 10 - 10 pF
V CB = 10 V, f = 1 MHz
Second-Breakdown Current
200 - 50b - 50b - - 50 mA
t = 0.4 s 'S/b —
p
Thermal Resistance: 15 max. 15 max.

R 0JC - 17.5 - 17.5 (40346) (40412)
Junction-to-case
(40346V2) (4041 2V2)
°c/w
Junction-to-free air R#JFA - - - - 45 max. 45 max.
(40346V 1) (40412V1)
aCAUTION: The sustaining voltages, V CEO sus and V CER* SUS '' must not be measured on a curve
' > tracer. '1
2N-Series types.
C 2N3439 and 2N3440 only. *2N-Series types in accordance with JE DEC registration data. gc
V :
POWER TRANSISTORS
2N3439; 2N3440; 2N4063; 2N4064^ 40385;

40346, V1, V2; 40390; 40412, V1,V2
0.2 0.4 0.6 as

(V BE — V
BASE- TO- EMITTER VOLTAGE mls-1597 I
Fig. 5 — Typical transfer characteristics for

2N3439. 2N3440, 2N4063,
2N4064 and 40390.
COLLECTOR-TO-EMITTER VOLTS <V CE ) tO
t's*
2
*>
X ^Si
3
3
l0
«
4 —— ifi
i
y^
<ff
k i-O
a
m
iff
001 1
BASE-TO-EMITTER VOLTS tVBE>
Fig. 6- Typical transfer characteristics for

40346, 40346V 1, 40346V2,
40412, 40412V1 and 40412V2.
I0 I00 I000
COLLECTOR-TO-EMITTER VOLTAGE <VC E>— 92LM-I596RI CASE TE MPER TURE ITC ) »•
Fig.4-Maximum operating areas for 2N3439,2N3440,2N4063 and 2N4064. eo

" il 06 in Tfl*
0.7
* m 0.6 tttTttt
lr If
ft* JJo.S§
COLLEC TOR-TO-EMITTER VOLTAC € ( VCE • l( V
S 40 | mm iinfmf
SB
f
1 WM\
2.0
8 20 l
1* '[•- m% ft* flit
rJri in - 2 I
ft:' fjtt pjTtSTrittIhliiiitjfr+Htat*

IS llF
IT* HI
fflf !,j ! titt«tmtta«{;t:;BtttB«i1
ffflff^pH
16
F/0. 7 — Typical output characteristics for

1.4
'I'tyF* f 'p'^pjtr''
2N3439. 2N3440, 2N4063,
'*
2N4064 and 40390.
3?
l COLLECTOR-TO-EMITTER VOLTS (Vc£> 10
-yj-
ITS h CASE TEMPERATURE (T( )-28*C -
(0*«
~ 1.0
00
£ 2
•y 1
*
°' e 1,2,
1 -*hh
M 0.6
w
I mk S8i:
j" . 2
^
hrfi
.<&
<e
°z_ £oo
3 75
0.4
4T trrr
4",
S
» JHJ
§,
d^ S 50
5 o.a :
0.2 1 "T1 w
;
«
fflrf
1
25
'fit
ifPt-'-'.'LuLfffp? i,! Imm 1.0
BASE-TO-EMITTER < V BE>— v MLM-H BASE-TO-EMITTER VOLTS (VBE) 92CS
Fig. 8— Typical input characteristics for Fig. 9— Typical input characteristics for F/gr. 10 — Typical output characteristics for
2N3439, 2N3440, 2N4063, 40346, 40346V1, 40346V2, 40346, 40346V 1, 40346V2,
2N4064 and 40390. 40412. 4041 2V1 and 4041 2V2. 40412, 40412V1 and 4041 2V2.
86
POWER TRANSISTORS
2N3441, 2N6263, 2N6264, 40373, 40912, 40913

Hometaxiai-Base, Medium-Power Silicon N-P-N Transistors
Rugged Devices for Intermediate, Power Applications Features:
and Commercial Equipment
in Industrial
2N6264: premium type from 2N3441 family
Maximum «afe-ar«a-of-operatlon curvet for dc and
RCA 2N3441, 2N6263, and 2N6264 are Types 40373, 40912, and 40913 are the pulw operation
High voltage ratingt
hometaxial-base silicon n-p-n transistors in- 2N3441 2N6263, and 2N6264 with
, factory-
Low Mturation voltagei
tended for a wide variety of medium to-high attached heat-radiators intended for printed-
Thermal-cycling rating curvet
power, high-voltage applications. These types circuit-board applications.
Applications:
are supplied in the JEDEC TO-66 hermetic
Serlet and thunt reguiatort
package.
High-fidelity amplifier!
Power twitching circuit!
Solenoid driven
MAXIMUM RATINGS, Abtolun-Mtgimum Vilun: 2N6263 2N3441 2N6264
40912 40373 40*13
•COLLECTOR-TO-BASE VOLTAGE TERMINAL DESIGNATIONS

V CBO
r »n 140 160 170
COLLECTOR-TO-EMITTER
SUSTAINING VOLTAGE:
* With b«. open V CE0 (lu.l 120 140 150
With extarnal baaa-to-emltter raalitanca (R - 100O V C e B («ut) 130
BE I
150 160
With ban ravana-blatad (V
BE - -1.6 V) Vreulaual 140 160 170
•EMITTER-TO-BASE VOLTAGE v „n
•CONTINUOUS COLLECTOR CURRENT I
°
PEAK COLLECTOR CURRENT
TRANSISTOR DISSIPATION: p"

* At casa temparatura up to 25°C
(2N6263) I2N3441) I2N6264) JEDEC TO-66
At ambiant temperaturai up to 2S°C 6.8 6.8 6.8 w 2N3441 ,2N6263.2N6264
140912) 140373) 140913)
* At temparatures abova 25°C
Derate linearly to 200°C
•TEMPERATURE RANGE:
Storaga & Operating (Junction)
•PIN TEMPERATURE (During Soldaringl:
At distances^ 1 /32 in. 10.8 mm) from Mating plana for 10 s max 236 °C
•in accordance with JEOEC registration data format JS-S ROF-2
(HEAT RADIATOR)
JEDEC TO-66 with Haat Radiator

40373,40912,40613
Fig.2-Thermal-cycle rating chart for 2N6264.
1 1 1
-Tj MAX -IOC •c
*
J.
10-
!' V*
V V**
^<\.
1- L
V 1HI p.
4~ '
\
6 8 2 6 8 2
| |
00 4 > 1
4 •
COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — NUMKR Of TMCKH4L CTCLtl

atci-mor
Fig. 1 -Maximum operating areas for 2N3441 and 2N6263. Fig.3-Thermal-cycle rating chart for 2N3441.
87
POWER TRANSISTORS
2N3441, 2N6263, 2N6264, 40373, 40912, 40913

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc ) = 25°C, Unless Otherwise Specified

2N6263 2N3441 2N6264
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 40912 40373 40913 UNITS
V dc A dc
V CE V BE Min. Max. Min. Max. Min. Max.
'c 'b
Collector-Cutoff Current:
100 5
With base open 130 " 1 mA

'CEO

140
— - 100
120 1.5 2"
140 - 1.5 5'

'CEX
140 1.5 1
With base-emitter 150 1.5 0.05'
junction reversed mA
biased 120 1.5 10'
140 1.5 6*
'CEX
(T
c
'ebo
150°C) 140
150
-5
1.5
1.5
— 2
5
1
•
mA
-7 1 0.2
,- -
Sustaining Voltage: 3 V CEO lsus)
With base open 1
b 120 140 150
With external base to
emitter resistance V CER (sus) 0.1 130 150 160 V
IR
BE I
= 100S2
With base-emitter
junction reversed v CEv' sus ' 15 0.1 140 160 170
biased
2 lb 20 60
DC Forward-Current h 2 3b 3 5
FE
Transfer Ratio 4 5b 20 100 25 100
4 27 b
0.5° 0.05 1.2* 1
Collector-to-Emitter V CE (sat) 1b 0.1 0.5" V

Saturating Voltage 2.7 b 0.9 6'
2 1 b - 1.5'
Base-to-E miner Voltage V BE 4 0.5 b 2* 1.7 V

4 2.7b 6*
Magnitude of Common-
Emitter, Small-Signal,
Short-Circuit Forward h e l
b
Current Transfer Ratio 4 0.5 5 5
(f = 0.4 MHz)
Gain-Bandwidth Product 200 -
200 - kHz
r 4 0.2 200
Common-Emitter, Small
Signal, Short -Circuit h 4 0.1 25 - - --
25 -
fe
Forward Current Transfer 4 0.5 - 15 75 -
Ratio If = 1 kHz)
Forward-Bias Second
Breakdown Collector 120 0.167 - - - - -
Current, Pulse Duration 120 - - - - 0.417 - A
's/b
(non-repetitive) - 1 s 120 - - 0.21 - - -
Thermal Resistance:
Junction-to-Cau R 0JC 8.75 (max.) 7 (max.) 3.5 (max.)
2N6263 2N3441 2N6264 °C/W
Junctiorvto-Ambient R 0JA 30 (max.) 30 (max.) 30 (max.)
40912 40373 40913
•In accordance with JEDEC registration data format (JS-6 ROF-2).

'CAUTION: The sustaining voltage V CEO (sus), V CER (sus), and V CEV (sus) MUST NOT be measured on a curve tracer.
Pulsed, pulse duration - 300 «»: duty factor < 2 %.

88
POWER TRANSISTORS
2N3441, 2N6263, 2N6264, 40373, 40912, 40913

CASE TEMPERATURE (T c =25°C )
z
MM
,.TjMAX.200*C
!
(CURVES MUST BE DERATED LINEARLY

WITH INCREASE IN TEMPERATURE) >^ i
I
X<
£ -
•
\ 1<s
a 6 to.- -
t x<-
\
*
X?
N<*>-
fs£
"V V
r -
\
Fig. 5— Thermal-cycle rating chart for

2N6263.
6 8 I000
COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — 92CS-I947I *O0 * ' ««IK > - "I0K < " «IOOK
EXTERNAL BASE-TO-EMITTER RESISTANCE (R B £l —
Fig. 4 — Maximum operating areas for 2N6264.
Fig. 6— Sustaining voltage vs. base-to-
emitter resistance for all types.
COLLECTOR-TO-EMITTER VOLTAGE (Vc ).4V T, COLLECTOR-TO-EMITTER VOLTAGE (VCE IMV COLLECTOR-TO-CMITTER VOLTAGE
f-.
[
~L, I40 (Vc E l-4\

ICO
>' 1 i
O 120 \ 1
2 1 140
T <
120
' e
T'
\j
.
\ >
K OOi 120
5 100 », | \
2
5 so U i Ik
I -
\ *"
100
\
' - >
£ 60
;
^.i i
1 «0
N
UK tATUR
V* i£c>-T 2»'C £-80 \
>
T 4 <> ^ |
, \ r»
Q41
-
g 40
^ ?
| GO *
iCASE TEMPERATURE
\(TC I • 25"C
\|
r i V s
°
\
I" t<
§ 20
123 •<
s
40
8 o * :
5s 20
lis-?
"^
« -2
[
-,
COLLECTOR CURRENT dc) —

*
|
T
PC w 4 •
u
COLLECTOR CURRENT
D".
- A
* 1
10 10-3 * 4
' To-2 * * '
V
i
( Ir)
*"
MCS-I9SI6 COLLECTOR CURRENT <I C I —A
Fig. 7— Typical dc-beta characteristics for Fig. 8— Typical dc-beta characteristics for Fig. 9- Typical dc-beta characteristics for
2N3441 and 40373. 2N6263 and 40912. 2N6264 and 4091 3.
O.S I 1. t 2.5
BASE -TO- EMITTER VOLTAGE (
Fig. 10— Typical transfer characteristics for Fig. 1 1 — Typical transfer characteristics for Fig. 12— Typical transfer characteristics for
2N3441 and 40373. 2N6263 and 40912. 2N6264 and 40913.
89
1 1 V V
POWER TRANSISTORS
2N3441, 2N6263, 2N6264, 40373, 40912, 40913

COLLECTOR-TO-EMITTER V0LTA81 (V ct ).<V COLLECTOR TO- EMI TTE R Vt LT» 6E "CE CASE TEMPERATURE IV)*2S*C
CASE TEMPERATURE (TC )-!9*C
l.t ...: L_. 1.5
1
X
'" -- _. *n ff imTrnTT t
i '"
too-- «4r
- -
1 K 1.0
If-
* 0.6
E
|
ISO 4
2
1 0.4 - X I00 ir 5 0.5
If- _.
._ -
i
5
0.2
u>
SO
^ MMffilR SffiW11[[llTff M
, ;
t a t • 2 6 e i I
n 1 1 1 1 1 1 1 1
COLLECTOR-TO-EMITTER VOLTAGE
1 1 1 1 1
IVCE I —
COLLECTOR CURRENT dc>- BASE-TO-EMITTER VOLTAGE (V BE )-V ,
!cs .| 26< .
Fig. 13— Typical gain-bandwidth product F/'p. 14— Typical input characteristics for Fig. 15— Typical output characteristics for
for all types. 2N3441 and 40373. 2N3441 and 40373.
BASE-TO-EMITTER VOLTAGE (Vbe> —V BASE -TO EMITTER VOLTASE (VM -V

- )
COLLECTOR-TO-EMITTER VOLTABE (Vofl-V
•2Cf-ltSIS
Fig. 16— Reverse-bias second-breakdown Fig. 1 7— Typical input characteristics for Fig. 18— Typical output characteristics
2N6263and40912. for 2N6263 and 40912.
CASE TEMPERATURE <TC ) • ts*c[-H-| 1 1 1 1
1.5
< !
'tj|| -
-
+
z ' -±
H :
"
$ - -
-f ± -. J • -; + :i: :i
h >
j 0.5 -
*
r
Dl
RENT (I ,1-0. InA
'
'
\>Mu mmmmmitittm
COLLECTOR - TO - EMITTER VOLTAOE (VCE >—
Fig. 19— Typical input characteristics for Fig. 20— Typical output characteristics for
2N6264and40913. 2N6264 and 40913.
90
POWER TRANSISTORS
2N3442, 2N4347, 2N6262

Hometaxial-Base High-Voltage Silicon N-P-N Transistors
Rugged High-Power Devices for Applications in Features:
Industrial and Commercial Equipment low nturation voltages
Thermal-cycle rating chain
RCA 2N3442, 2N4347, and 2N6262 are hometaxial-base, These device* employ the popular JEDEC TO-3 package; they
" "'* diwi P ation capability - 100 W (2N4347)
silicon n-p-n transistors intended for a wide variety of differ in maximum ratings for voltage, current, and power. - 117WI2N3442)
high-power, high-voltage applications. Typical applications '
_ 150 W (2N6262)
for these transistors include power-switching circuits, audio . Maximum are*of-operation curves
amplifiers, series- and shunt-regulator driver and output
for dc and pulse operation,
stages, dc-to-dc converters, inverters, and solenoid (hammer)/ . ,.
relay driver service. Applications:
Series and shunt regulators
MAXIMUM RATINGS, Abalut^M.ximum Values: 2N4347 2N3442 ^.g,
•COLLECTOR-TO-BASE VOLTAGE w_„ m „„ „
.°r£^^-.™.WLTA -
140 ,
'
TERMINAL OESIG.ATIO.S-
whh r^ bte( v BE ,of-,. 6 v:::::::::::::::::::::::::::::::::;:;:
v
^° Z
;»
Z
l£ 170
*
•EMITTER-TO-BASE VOLTAGE
•COLLECTOR CURRENT:
.... v EBO
,
7 ,
'
V
£
\ (FLANGE)
Continuous C
•basecurrent! ,
B
10 * 16 15 A (Q
V fo-& Q^
Continuous _
peak
7 7 A
;;;;; t. _ A
•TRANSISTOR DISSIPATION: p
Atc-.t«np.r«ur.upto2S C T
At case temperatures above 26°C
100 ,, 7 ,-. W
„
•TEMPERATURE RANGE: Derate linearly to 200 C JEDEC TO-3
Storage ft Operating (Junction) „ -
•PIN TEMPERATURE (During Soldering) *" ^
At di«ancas^1/32 in. (0.8 mm) from case for 10 s max •
236 236 236 °C
•in accordance with JEDEC registration data format (JS-S, RDF-2).
CASE TEf^PEflATUREC^J.as^ fawytfc

I
AERATED LINEARLY WITH WCRBASE
CASE TEMPERATURE (Tc)»2S'C

1 !
f. 170
i
«CER
60
II' 1 1
"ftp. ?
VCER VCEO
SJiso
*-
-
VCEO
ftl
3 T\
\ CEr
130
™s
^
vccc
G 120
1lfl
8 no
* • 6 «•

resistance for all types.
^TjMAX.-20C»C
* «
\ n^
1
*
1 NSfc.
| \
a
10 "100 200
COLLECTOR -TO -EMITTER VOLTAGE (V^) — i
\ k
Fig. 1— Maximum operating areas for 2N3442.
10
4 *
• ' »» « • * ,0* *
NUMBER OF THERMAL CYCLES »zcs-IOTI«
Fig.3— Thermal-cycle rating chart for

2N3442.
91
.
POWER TRANSISTORS
2N3442, 2N4347, 2N6262

ELECTRICAL CHARACTERISTICS. At Case Temperature (Tc) = 25°C unless otherwise specified

SYMBOL UNITS
CHARACTERISTIC
VOLTAGE CURRENT
2N4347 2N3442 2N6262
V dc A dc
Min. Max. Min. Max. Min. Max.

V CE V BE •c >B
Collector Cutoff Current: - - - 1* - 1 mA

<V CB =140V)
With base-emitter junction 120 -1.5 2
-1.5 - 5 - mA
reverse-biased 'CEX 140
140 -1.5 - 1
150 -1.5 0.1

reverse-biased and 140 -1.5 - 30 mA
'CEX
Tc = 150°C 140 -1.5
- 10 -
150 -1.5 2
1CXJ 200
With base open 110 1 mA
'CEO
140 200
Emitter Cutoff Current -7 - 5 - 5 - 0.2 mA
'ebo
2 3a 20 70
2 10 a 5
a 15 60
* DC Forward Current 4 2
Transfer Ratio h FE 4 3a 20 70
4 5a 10
4 10 a 7.5
Col lector-to-E miner

Sustaining Voltage:
With base-emitter V CEV (sus) -1.5 0.1 140 - 160 V
junction reverse- -1.5 0.2 - 170 -
biased
With external base-to-emitter V CER lsus) 0.1 130 V
resistance " 00i2 0.2 _ 150 - 160 -
(Rb E > 1
a 120 140 V
* With base open V CE0 (susl 0.2
0.2 a : : 150 _
2 3a 1
4 3a 17
* Base-to-E miner Voltage V BE 4 2 a 2 V
4 5a - 3 -
4 10 a 5.7
* Collector-to-Emitter 2a 0.2 1
Saturation Voltage V CE (sat) 3a 0.3 - - 1

- 0.5 V
5a 0.63 2
10 a 2 5
67 1.5 1
Power Rating Test PRT 78 1.5 - 1

- - s
100 1.5 1
* Magnitude of Common-
Current Transfer Ratio: Ihf.l
f = 50 kHz 4 0.5 4
f = 40 kHz 4 1
- - - 2 -
he\
4 2 2
* Common-Emitter, Small-
Signal, Short-Circuit, 4 0.5 40
Forward Current Trans- 4 1 - 10 -
"fe
fer Ratio If = 1 kHz) 4 2 12 72
Thermal Resistance:
Junction-to-Case R - 1.75 - 1.5 - 1.17 °C/W
0JC
•In accordance with JEOEC registration data format JS-6 ROF-2

'Pulse test; pulse duration - 300 Ms, rep. rate 60 Hz
92
V
POWER TRANSISTORS
2N3442, 2N4347, 2N6262
K> 100 200

COLLECTOR- TO- EMITTER VOLTAM (V^)—
COLLECTOR-TO-EMITTER VOLTAGE (V C e'— V
93
POWER TRANSISTORS
2N3442, 2N4347, 2N6262
W&& /
c EMITTER rafrffawfc ¥ :: CASE TEMPERATURE <TC ) 23'C t
| | | | | | | | | | | | | 1 1 ff
9 h
ISp ~!
T
.-:;;
M* 4
—
i 1.2:
1
l0
Ti
I 3
:o
f q
1 ^f;^n;-it:t
jig
5
IfT
' ZA
"
s
i
H
Z.0 i3 3.0 3.5 4.0
0.2 0.4 0.6 0.8 1.0 1.2 L4 1.6 COLLECTOR-TO-EMITTER VOLTASE (V^—
COLLECTOR CURRENT (I SASE-TO-EM'TTER VOLTAGE (V^l—
c
Fig. 6 — Typical dc beta characteristics Fig. 7 — Typical transfer characteristics for Fig.8- Typical small-signal output characteristics
for 2N3442. 2N3442 and 2N4347. for 2N3442.
3.3
J CASE TEMPERATURE (Tc ) 2S'C COLLEC TOR- TO- EMIT TER V0L1 AGE IVCE 4V
I00
3.0
1
1
05
'S^Tj MAX..20CC
*
*o± 0.4
I
JOB*
T
i Nsl,
1 yP 2S& ~ 0.3
s^
£ffi =1 ilHmSJ
]J| S: «f :•:
\
[ J! J | [ |jj
I
J >o " 02 fW H 5
0.3
i SS^ V '
\
î^r
^
20 40 60 SO K» 120 140
0.1
mm ~*Z#
10 & V
V
\
COLLECTOR-TO-EMITTER VOLTAGE (Va >—V 9ZSS-3249
0.6
8ASE-T0-EMITTER VOLTAGE (Vg E )
0.8
—
F/gr. 3 —Typical large-signal output characteristics 10 —Typical input characteristics for
Fig. Fig. 11 — Thermal-cycle rating chart for 2N4347.
for 2N3442. 2N3442.
COLLECTOR-TO-EMITTER VOLTAGE (VCE ) = 4 V CASE TEMPERATURE (Tc )i25 - C
70
1 1 I 1
II
in llll
;,w^
£ II
j
*** j I
I
£ 60
y V
: j
1"
lilifflTTTBffi
^ fggf
M \ ^w fflj-l*<
^ % H 2.0
I
S
A i
HI 11 llll]]] 111 || 11 11 1111 lllllnl'fi i
Ua>
,
§ is
1 |I| LJT| ||Tnf
i" |
1
| | [ | I
| 1
| | | 1 I
|
1
| | | || TtTT
| 30 rglfFrti
§ 111 Lftll Ho? |,o
\* 1
1
1 1 1 1 1| 1
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
i- s/^ o LfnTI 1 1 1 1 1 1 1 1 1 1 base cuwffi (M'oaii

8
8 yfntTtl 1 1 1 1 1 1 1 1 1
1
1 1 1 1 1 1 1
1] 1 1
ai 0.3
1 1 1 1 |
i
-
20 40 60 80 100 120 140
0.3 ID 13 20 2.3 3.0 S3 4.0 43
COLLECTOR-TO-EMITTER VOLTAGE (V^—V COLLECTOR-TO-EMITTER VOLTAGE IV^— V
COLLECTOR CURRENT (I c l— A 92S9-K47
92S9-3249
Fig. 12 — Typical dc beta characteristics for

Fig. 13 —Typical small-signal output characteristics Fig. 14 -Typical large-signal output characteristics
2N4347. for 2N4347. for 2N4347.
COLLEC rofl- TO- Ml TER VOLTAGE <vc :>« v H I50 COL LECTOR -TO- EMITTER VOLTAGE V CE ) '4 V (
yTj MAX.' 200 °C

1.0
m1 1 1 l0 °-
l0 °
x
1 *
I
a ° Xcjj £ 80
A
T
O.S
F wW J
p
X £ 60
\^
*£\a
£o,6 P\ v
WK v"jflltlllllllfttttl
\ \
sfrr
S^v i
3 40
\
%
|o.4 §§ SBffi ?illlll!IIHIIIIIil s
a \V
0.2
1
^| ffl „ll„„„„„„, mnrnn
V ^ 1
2°
X
0.6 0.8
BASE-TO-EMITTER VOLTASE <%£>— V
1.0 1.2 1.4 16
15 M >.
UMBER OF THERMAL CYCLES

No,
COLLECTOR CURRENT Uc » A
92CS-I9963
929S-3227
Fig. 15 — Typical input characteristics for Fig. 17 — Typical dc beta characteristics for
Fig. 16 -Thermal-cycle rating chart for 2N6262. 2N6262.
2N4347.
94.
POWER TRANSISTORS
2N3442, 2N4347, 2N6262

« COLLECTM-TO-CMTTtKgg wmii
VOLTAOE (Vfc t >.4V Hs 1 llnfr/ff CASE TEMPERATURE <TC ) 25*C ft ll ft
9
34+4 4++4ffl+W4 RWffii+tt ft* s
 I*
05 10 1.5 2.0 8.5 5.0 5.5 4.0 Tj» 20 40 to W 100 120 140
ASE-TO-EMrTTER VOLTMC (V,.)—

COLLECTOR-TO-EMITTER VOLTAGE (V^l — COLLECTOR-TO-EMITTER VOLTAOE IV™!—
•KS-19590 MCS- 1(941
KCS-IMM
Fig. 18 — Typical transfer characteristics for F/"$. 19 — Typical small-signal output 20 - Typical
Fig. large-signal output characteristics
2N6262. characteristics for 2N6262. for 2N6262.
« COLLECTOR CURRENT (I
C )/6ASE CURRENT II, )-K>
- Iff Pi
7
V''
r>.
•"
/
*
5 •,
,,-fA
—&/ —
&r /
<Y 1
4 '
V '
/
t 1
t /
01
02 04 06 0.8 to 91
I
' 0,
»" tH I.C
•ASE-TO-EMITTER VOLTAOE (V, ) V COLLECTOR-TO-IMITTER SATURATION VOLTAU Sgj (mjl-y
E
MCt-»t» RIMIH •ASE-TO-EMITTER VOLTAOE IVÎ —
22 —
Fig. Typical saturation-voltage characteristics Fig. 23 - Reverse-bias, second-breakdown
2N6262. for all types. characteristics for all types.
.95
POWER TRANSISTORS.
2N3583-2N3585, 2N4240, 40374

Features for JEDEC Types:
High Voltage Silicon N-P-N Transistor 100-percent tested to assure freedom
For High-Speed Switching, Linear-Amplifier Applications, and Off-Line from second breakdown in both
forward- and reverse-bias conditions
Switching-Regulator Type Power-Supply Applications
when operated within specified limits
These transistors are also intended for a Economy types for ac/dc circuits
These RCA types are silicon n-p-n transis-
Fast turn-on time at high collector
tors with high breakdown voltages and wide variety of applications in ac/dc com-
mercial equipment. current
fast switching speeds.
Typical applications for these transistors Types 2N3583, 2N3584, 2N3585, and
include high-voltage operational amplifiers, 2N4240 are supplied in hermetic JEDEC
high-voltage switches, switching regulators, TO-66 packages. Type 40374 is a 2N3583
converters, inverters, deflection- and hi-fi
with a factory-attached heat radiator.
amplifiers.
(FLANGE)
JEOEC TO-66 2N3S83. 2N3S84,

2N3585 2N3S85, 2N4240, 4O8S0
MAXIMUM RATINGS, Absolute-Maximum Values: 2N3583 N3584 2N4240 40374
'COLLECTORTO-BASE VOLTAGE V CB0 250 375 500 250

' COLLECTOR-TO-EMITTER SUSTAINING
VOLTAGE:
With base open Vq^qIsus) 175 250 300 175
'EMITTER-TO-BASE VOLTAGE . , V EB0 6 6 6 6
'CONTINUOUS COLLECTOR CURRENT I
c
1 2 2 2
"PEAK COLLECTOR CURRENT I
CM 5
'CONTINUOUS BASE CURRENT I
B 1
'TRANSISTOR DISSIPATION PT
At case temperature (Tq) = 25°C 35
JEDEC TO-66 with Heat Radiator
At ambient temperature (T^) = 25°C -
40374
At case temperatures above 25°C Derate linearly at 0.2 W/°C
(HEAT RADIATOR)
For other conditions - Derate linearly to 200°C —
Storage & Operating (Junction)
"PIN TEMPERATURE:
1/16 in. (1.58 mm) from seating plane for 10s max. 235
*ln accordance with JEDEC registration data format J9*6 RDF-2 I2N3583I, JS-6 RDF-1
I2N3584. 2N3585. 2N4240).
So CASE TEMPERATURE (T
C
WS'C
...
> 25
1
i- H,20 St-
«?/ ;
1 1 :
\if \ ....
i
...
w 05 _j. .;;/.. —
....
__i_..
2 04 06
COLLECTOR CURRENT (I
c
}—
Fig.3— Typical collector-to-emitter saturation

Fig. 1 — Typical dc beta vs. collector current Fig. 2— Typical dc beta vs. collector current for voltage vs. current for 2N3584
for 2N3583, 2N4240 and 40374. 2N3584 and 2N3585. and 2N3585.
96.
POWER TRANSISTORS
2N3583-2N3585, 2N4240, 40374

ELECTRICAL CHARACTERISTICS «f C*se Temperature (Tc) ' 25°C Unless Otherwise Specified

CHARACTERISTICS SYMBOL VOLT- 2N3S83
CURRENT 2N3584 2N3585 2N4240
AGE 40374 UNITS
V dc mA dc
Collector-Cutoff
M150
Vbe •C 'e 4» MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
- 10 - 5 " 5 - 5 mA
Current 'ceo
225 -15 1.0
Collector-Cutoff
'CEV 340 -15 - - 1.0 - " mA
Current
450 -1.5 1.0 2.0
225 -1.5 3
At T c = 150°C 'cev - - - - mA
300 -15 3 3 5.0
Emitter-Cutoff
-6 - 5.0 - 0.5 - 0.5 - 0.5 mA
Current 'ebo
2 750" 10 100
2 1A» 8 80 8 80 Fig. 4— Reverse-bias second breakdown
DC Forward- 10 100" 40 40 40 40
Current
h FE characteristics for 2N3584 and
10 750" 40 200
Transfer Ratio
10 750' 30 150 2N3585.
10 1A 10 25 100 25 100
SustainingVoftage:
With base open VCE0 (susl 200 175* . 250# _ 300* _ 300* _ V
With external base- 250 — 1.0
to-emitter resis-
300 200 - 1.0 mA
u 'CER _
tance (R
BE )=50 450 1.0 1 1.0
4: ~+- -j-
?+rt
Emitter-to-Base
v EB0 5 " " - - - - - V
Voltage ll,
750" 75 i 3 HH "Ttt .•_„„..--„ r
Baseto-Emitter
Saturation Voltage V BE (sat) 1A" 100 " 1.4 " 1.4 - 1.4 -
1.8
V ::n ir , i
Uij
i
ill
750" 75 1.0
Saturation Voltage
VCE (sat) 1A* 125 ' 5 0.75 0.75
V î
X
::•'. !•:! }:!:: -.:-:
Small-Signal Forward
Current Transfer EXTERNAL BASE-TO-EMITTER RESISTANCE (R BE I —
Ratio hfe
f = 5 MHz 10 200 3 3 _ 3 - 3 _ Fig.5— Reverse-bias second breakdown
f = kHz 30 100 25 350
1
characteristics for 2N3584 and
Magnitude of Com-
mon-Emitter, Small-
2N3585.
Signal, Short-
Circuit, Forward h fel 10 200 2 2 2 3 -
l
Current Transfer
Ratio 3
INDUCTANCE ID • lOOpH ^--
f = 5 MHz
Output Capacitance: tt T
^-obo 120 120 120 120 pF
V CB =10V.f=1MHz ::::::::::::;:4^^ffl:::
Second- Breakdown > 1
Collector Current
'S/b 100 350 350 350 350 mA s
With base forward-
biased**
Second- Break down
:E:^::!:^:|:^::4:: || t
.{.
it I
ti -t 4
*-
# Hi-
1
rf
Energy with base

reverse-biased
R BE = 20fi,
E S/b -4 pk
1A
50 " " 50 -
f-l
:
= :
--_--_---
=
:::^--f
-—
""^
- -
? jlT
j
f f
11
r'F
HI Hr ilk
H
t
L = 100>H -It
RbE = 20S2:
-4 2A BASE-TO-EMITTER VOLTA0E &&)— V
200 200 -
L= 100 uH pk
Saturated Switching
Fig.6— Reverse-bias second breakdown
Time(Vcc=200V):
Rise Time t 1A 100 " ^ " 3 - 3
characteristics for 2N3584 and
r
(See Figs. 13 & 750 75 - 0.5 2N3585.

16)
MS
Storage Time
1A 100 " 4 - 4 " COLLECTOR-TO-EMITTER VOLTAGE
(See Figs. 14 & IVqe) • 10 V
•s
750 75 _ _ 6 90
16) p#
•°/
Fall Time n/
" - nil
750 75 3 */
(See Figs. 15 & -
161
'f
1A 100 3 - 3 -
1 ^ -7
1
Thermal Resistance: 5 (Max.) - -

R 0JC 5 - 5 5 S 30 fl
Junction-to-Case 2N3583
70 (Max.)
$E~
- 70 - 70 " 70 °C/W
Junction-to- 2N3583 3 20
R JA
Ambient 30 (Max.) l
i
40374
rO if
* In accordance with JEDEC registration data formal JS-6 RDF-2 (2N3583), JS-6 RDF 1 (2N3584, 2N3585, \
* CAUTION: The sustaining voltages Vq E q(sus) and V££p(sus) MUST NOT be measured on a curve tracer.
"Specified value of Ig/b tor given value of V(; E as base voltage is increased from zero in a positive direction.
* Pulsed, pulse duration = 300 ms; duty factor < 2%.

BASE-TO-EMITTER VOLTAGE (V BE I —
Fig. 7— Typical input characteristics for

all types.
97
A V A V H V
POWER TRANSISTORS
2N3583-2N3585, 2N4240, 40374
4 -r* If. »AX. (C0NTINU0US)(2N3S83 0NLY)|

-::
2
V.::
™
4
1
O
1
8 'iS'c 38 W>*
!
1s
Si-
r
i'W
i m
ml\<4
ISid E_ H- =
H
— 6
TS'CIZSV i)H* sii hIIp |g
100 "0(20 W)r S|jCi =
: - tM^-
: :?
4 "129*0
| (16*)?"
* fei(SU) PE— 2.5)
-LIMITEI f tffi
o -
V"
I7H F'r" tt
*
$ il|y* 5 £r.
:±=Ski!
;;;; .^ =.
~—
HP
'
:= ~*-
O •
if = 1:
6
4
* tth
JE?
IB
^^.[Upillii-^-k^^tlflB
1
Sif
•
:j:p
vce
iiS
£|i T
T1
-rfii VCEO MAX.«2S0V fa lii
2 1
_ --
0.01 1 2N M85ft2 HZ' 9>!ffi§
468 10
2 488. 100
1 4
•
e
,o *
4
' 8
ioo
C0LLECT0R-T0-EMITTER VOLTAGE <Vc£>- COLLECTOR-TO-EMITTER VOLTAGE <VcE>—
Fig.8-Maximum operating areas for 2N3583, 2N3584, 2N3S85, Fig.9-Maximum operating areas for 2N3583, 2N3584, 2N3585.
and 2N4240 (pulse conditions). and 2N4240 (dc conditions).
1.2
c»s E T [MP RAT URE ITc l-l l*C |l|[||||||||||||||||||||ffftffi ;
PULSE OURATION- 20 »1 1
- ^—i REPETITION RATE • 1000 PULSES/I -

COLLECTOR SUPPLY VOLTAGE <VCC 200 V
n i
)
10 ^-—i CASE TEMPERATURE #

(T<.) • 25 C -
1 X »l ,X B2
1
a soo
~ii :
:-l :
1"
;::;:;;
|
;:
I
:"":'":
S TOO
5=
1,4,
*?,
\\ ';
.:
'
!
i.
§. \
: ! ; :
i tOO =,>
^ as »*TTs.|||||[||||||||||||||||||||ffl | 0.6
\!\i
% I::':
V
; :
S 900
k ; •
u 400 jj"sj§
i 0.4
1
i
8 joo
\:
^*»-
!
DC RFTAIWE. 1
—
>.\0-l
!
200 J -
100
fiL
ASE CU iRtNîA?!'"* fHtifHftillllllllnill
2
: T^ •
1
-1
I
;" :
j 1 'T
29 SO 75 100 129 ISO 179
COLLECTOR-TO-EMITTER VOLTAGE 1Vc e1— V
»2CS<20002
COLLECTOR-TO-EMITTER VOLTAGE (Vet) — — Typical output characteristics
MSS-3II5RI Fig. 1 1 for Fig. 12— Typical rise time vs. collector current
Fig. 10— Maximum operating areas for 40374. 2N3583 and 40374. for 2N3S84 and 2N3585.
PULSE DURATION! 20m>

64 ! PULSE DURATION >20u> :
COLLECTOR SUPPLY VOLTAGE (Vcr> a 2COV COLLECTOR SUPPLY VOLTAG EIV -c>- 200 V
CASE TEMPERATURE (Tc> • 28»C 0.6 CASE TEMPERATURE (Tjl • 2! •C
I B,-lB2 I 8,'l82
'''•'aS X 0.7
'
i i
1 I
i !
\_
X !
\
| 6.0 0.6
I !
i 40 OS
i
.: 5s
'IP
£e '•*
* 20
Hr'ft. 0.4 f\
0?
2 4 6 8 10 12 14 16 16 2
COLLECTOR CURRENT (Ijl — COLLECTOR CURRENT lie)— COLLECTOR SUPPLY VOLTAGE IV55I —
KSS-3IZ5NI
Fig. 15— Typical rise time, fall time, and
Fig. 13— Typical storage time vs. collector Fig. 14— Typical fall time vs. collector cur- storage time vs. collector supply
current for 2N3584 and 2N3585. rent for 2N3584and2N3585. voltage for 2N3584 and 2N3585.
98
POWER TRANSISTORS
2N3715, 2N3716
Silicon N-P-N Epitaxial-Base High-Power Transistors

Features:
The RCA-2N3715 and 2N3716 are epitaxial- They differ in voltage ratings and in the Maximum safe-area-of-operation curves
base silicon n-p-n transistors featuring high currents at which the parameters are con- m Hermetically sealed JEDEC TO-3/TO-204MA
gain and high current. They may be used package
as trolled. Both are supplied in the steel JEDEC
complements the RCA-2N3791 and High gain at high current
to TO-204MA hermetic package.
2N3792 respectively. These devices have a
Thermal-cycling rating curve
dissipation capability of 150 watts at case

temperature up to 25°C.
Applications:

MAXIMUM RATINGS, Absolute-Maximum Values: High-fidelity amplifiers
2N3715 2N3716
Solenoid drivers
* v CBO 80 100 V
* v CEO* sus ' 6° 80 V
* V EBO ^ 7 V
*
"c 10 10 A
* 'B
4 4 A
* PT
AtT c <25°C 150 150 W

.o
AtT c >25 C Derate linearly 0.86
* T stg. T J -< >200 - °C

* TL
At distance ^ 1/32 in. (0.8 mm) from seating
plane for 10 s max
* In accordance with JEDEC registration data.
JEDEC TO-204MA
IO
8
50 pMC W LESS S\
— V COLLECTOR -TO- EMITTER VOLTAGE <W)-V

92CM-30MO
— Maximum operating areas for 2N3715.

Fig. 1
99
.
POWER TRANSISTORS
2N3715, 2N3716
ELECTRICAL CHARACTERISTICS,
at Case Temperature (Tq) = 2S°C Unless Otherwise Specified

VOLTAGE CURRENT
CHARACTERISTIC 2N3715 2N3716 UNITS if::!
Vdc Adc
VC E VfJE •c 'B MIN. MAX. MIN. MAX. u.
° 40---
80 -1.5 1
'CEX _ _ mA ui 20
100 -1.5 1
'CEX> 60 -1.5 - 10
_ mA
T C =150°C 80 -1.5 10
30 - 0.7 — Fig. 3— Derating curve.

mA
'ceo
'ebo
40
-7 - 1.0 -
0.7
1.0 mA 1 00 —
V CE0 (sus)b 0.2 60 - 80 - V * „
I ±A
2 1a 50 150 50 150
hFE 2 3a 30 30 'A
4 10 5 5 <&
X
- -
V B £a 2 3 1.5 1.5 V
* \\\
T—
1
V BE (sat)a 5 0.5 - 1.5 - 1.5 V \ j \
V CE (sat)a
10
5 0.5
2.0
- 0.8
4 :
0.8
4
V
10
%V
NUMBER OF THCRMM. CYCLES (IN
c*»
THOUSANDS)
No
8 '
.
92CS-I9970M
Ih fe l
10 0.5 5 - 5 - Fig. 4 — Thermal-cycling rating chart.

f = 1 MHz
f 10 0.5 30 - 30 - KHz _ 360 COLLECTOR-TO-EMITTER VOLTAGE (V CE )>4V
hfe CASE TEMPERATURE <T )"25'C
C
30°
h fe
10 0.5 25 250 25 250 <
f = 1 KHz
5 340
c ob
V CB = 10 V - 250 - 250 pF
>- 180
f = 1 MHz i
§ 12°
40 2.7 - 2.95 - A
tp= 1s 1 60
e
R 0JC - 1.17 - 1.17 °C/W 8
6 8 2 4 6 8
001 0.1 I 10
* In accordance with JEDEC registration data. b CAUTION: Sustaining voltages Vq^q(sus) COLLECTOR CURRENT (I r )
a Pulsed; pulse duration = 200 /us, duty factor = 1

and V(-.£p(sus) MUST NOT be measured on 92CS-29003
a curve tracer. Fig. 5— Typical dc beta characteristics for

both types.
8 COLLECTOR-TO-EMITTER VOLTAGE (V CE )« 4 V
CASE TEMPERATURE (T c 25"C )
I 7
S
J, 6
Z 5
4
|
§
z
a 2
3 1
o.s I
BASS-TO-EMITTER VOLTAGE (V BE ) —V BASE-TO-EMITTER VOLTAGE (VBE )-V COLLECTOR CURRENT (I c l —A

92CS-29007 92CS- 29004
Fig. 6— Typical transfer characteristics for 7 — Typical input characteristics for
Fig.
Fig. 8— Typical gain-bandwidth product for
both types. both types.
both types.
100
POWER TRANSISTORS
2N3771, 2N3772, 2N6257, RCS258

Hometaxial-Base, High-Power N-P-N Transistors
Rugged Silicon N-P-N Devices for Applications in Industrial and
Commercial Equipment Features:
V CEX (sus)at 3 A = 50 V min.
These RCA types are hometaxial base, regulator driver and output stages, dc-to- (2IM3771,
silicon n-p-n transistors intended for a dc converters, inverters, and solenoid 2N6257)
wide variety of high-power, high-current (hammer)/relay driver service. = 90 V min.
applications. Typical applications for these (2N3772)
All devices employ the popular JEDEC
transistors include power-switching cir- 15-A specification for:
TO-3 package; they differ in maximum
cuits, audio amplifiers, series- and shunt-
ratings for voltage, current, and power.
h FE , V BE# & V CE (sat)
(2N3771, 2N6257)
10- A specification for:
MAXIMUM RATINGS. Absolute-Maximum Values:

h FE ,V BE ,&V CE (sat)
2N3772 RCS258
"COLLECTOR-TO-BASE VOLTAGE V CB0 100 100
(2N3772, RCS258)
"COLLECTOR-TO-EMITTER VOLTAGE: Low saturation voltage with high beta
With -1.5 V (V BE )&R V CEX
BE = lOOfi
With base opea
^CEO
"EMITTER-TO-BASE VOLTAGE V EB0
"CONTINUOUS COLLECTOR CURRENT I
c
'PEAK COLLECTOR CURRENT I
CM
"CONTINUOUS BASE CURRENT I
B
"PEAK BASE CURRENT I
BM
"TRANSISTOR DISSIPATION: PT
At case temperatures up to 25°C 150 150 150 250 TERMINAL DESIGNATIONS
At case temperatures above 25°C Derate linearly to 200°C
"TEMPERATURE RANGE:
"PIN TEMPERATURE (During soldering):
At distance > 1/32 in. (0.8 mm) from seating plane for 10 s max.
•In accordance with JEDEC registration data format JS-6 RDF 2.
COLLECTOR-TO-E MITTER VOLTAGE IV CE |.4V 1
Tj MAX.. 20C •c
! I ° J60
IOO
v * 200-
|
•C- —
s. ;<' a 140
1
"-*~^ "^Sl c.
^, z
1
120
S !
(
V 1
.
j
*~
IOO
feft fc%
^
1
<•
5 l V a SO _H "T
J
*
•
*, u 60
i °î
k^ *€•
&— S&r
k.">-
'"•r
\\ N&
f
4°
\ \K \}?j
^fe. ^
i
20
15
e
5 6
)
4
*J
o! t
s 2
to ii- Ir i
l> 1 i
is
NUMBER OF THERMAL CYCLES CURRENT (Ir) — A
Fig. 1 — Thermal-cycle rating chart for 2N3771 Fig.3— Typical dc beta characteristics for
2N3772, and 2N6257. Fig. 2 — Thermal-cycle rating chart for RCS258. 2 N3771.
COLLECTOR-TO-EMITTER VOLTAGE (V CE 1-4V COLLECTOR CURRENT BASE CURRENT (I B ). 10 CCN.LECT0R CURRENT (Ic) / BASE CURRENT [iai- of
(I
c )/
I
*
'
!
!
° 1
L
I60 ::::;::::
!
!
1
ir I40 1 , . ,
20 :±:::::::
'
>'
2 I20 ;
: •
1
|
*P
*~
IOO
îzri^s^v
1
w >:;
.
* r,'fo4
:
iff::::::
£ 80 i
#/ o 13
S !CVV. :...1 s
o / £
° 60 .
10 E""3^/fl/
S ::::
ui 10
'
ff"
t> !
'f-
1 "° ^> N£ i s
&A '::':': ':::-. :
.:V: •;:•
5
wl
+"Sa5
8 '' :-.:: :::: ^
3?f
COLLECTOR CURRENT (I c )
1 1
A
1
ri / :;::
'rfi
m ':::: ;::; ••
_
-TO-EMITTER SATURATION VOLTAGE [vCE (Mt^-V COLLECTOR-TO-EMITTER SATURATION VOLTAGE [vce (tat)] -
Fig. 4 — Typical dc beta characteristics for Fig. 5— Typical saturation-voltage characteristics Fig. 6 — Typical saturation-voltage characteristics
2N3772, 2N6257 and RCS258. for 2N377 1 . for 2N3772, 2N6257 and RCS258.
.101
POWER TRANSISTORS
2N3771, 2N3772, 2N6257, RCS258

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25° Unless Otherwise Specified
VOLTAGE CURRENT UNITS

CHARACTERISTIC SYMBOL A dc 2N3771 2N3772 2N62S7 RCS2S8
V dc
^B VCE VBE 'c 'B MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
- 2* 4
Collector-Cutoff Current 'CBO 50
- 5* - - mA
With emitter open 100 5
reverse-biased 50 -1.5 - 2 mA
'CEX
100 -1.5 5 5
30 -1.5 10 10
45 -1.5 20 - mA
reversed-biased,Tfj=150°C 'CEX
30 -1.5 10
25 10
30 - 10
With base open _ _
mA
'ceo 50 10 10
-5 - 5 - - 10 -
mA
-7 5 5
4 30" 5
DC Forward Current Transfer 4 20" 5 5 5
h FE a
Ratio 4 15 15 60
4 10" 15 60 15 60
4 8" 15 75
Col lector- to- Emitter

Sustaining Voltage
With base-emitter Junc- VCEX (sus) -1.5 0.2" 50 - 80 - 50 - 80 - V
tion reversed-biased
(r be = loom
emitter resistance VCER (sus) 0.2
a
45 - 70 45 - 70 - V
(R BE )
= ioon
With base open VCEO lsus) 0.2
a
40 - 60 - 40 - 60 - V
4 15" 2.7
Base-to-Emitter Voltage V BE - - - - V
4 10" 2.2 2.2
4 8" 2.2
30" 6 4
20" 4 4 4 - 4
VCE (sat) 15" 1.5 - 2 V
Saturation Voltage a - -
10 1 1.4 1.4
8' 0.8 1.5
Second- Breakdown
Collector Current
With base forward- 'S/b
b 60
'
- 2.5 - - 4.2 A
biased and 1— 40 3.75 3.75 -
nonrepetitive pulse
Second-Breakdown Energy
With base reverse biased and C -1.5 5 500 - 500 - 500 - 500 - mJ
Es/b
L=40mH, R BE =100n
16 16 16 16
Short-Circuit, Forward 4 4* 4* 4* 4
Kel 1
(Typ) (Typ) (Typ) (Typ
Current Transfer Ratio
(f = 0.05 MHz)
Signal, Short-Circuit,
h fe 4 1 40 - 40 - 40 - 40 -
Forward Current Transfer
Ratio (f = 1 kHz)
Thermal Resistance: - - - -
R 0JC 1.17 1.17 1.17 0.7 °C/W
Junction-to-Case
* In accordance with JEDEC registration data formal JS-6 RDF-2.

* Pulsed; pulse duration = 300 ps, rep. rate = 60 Hz, duty factor < 2%.
b at which second breakdown occurs at a specified collector voltage with the emitter-base
'S/b s d e ^ ne d at the current
'
junction forward biased for transistor operation in the active region,

c Eg/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions. Eg/t, = V4LI ,
where L is a series load or leakage inductance and is the peak collector current.
I
102
POWER TRANSISTORS
2N3771, 2N3772,2N6257, RCS258
f IO IOO
COLLECTOR-TO-EMITTER VOLTAGE (VC e>— V
92CS-2855I
Fig. 7- Maximum operating areas for 2N3771, 2N3772, and 2N6257.
CASE TEMPERATURE (Tc)-2S*C

4 8
60 IOO IOOO
COLLECTOR-TO-EMITTER VOLTAGE (Vce>— V
92CS- 26449
Fig. 8— Maximum operating areas for RCS258.
103
POWER TRANSISTORS
2N3771, 2N3772, 2N6257, RCS258

COLLECTOR- TO -EMITTER VOL iagj (VC E> " <v -
COLLECTOR-TO- EMITTER VOLTAGE CASE TEMPERATURE (T C )'25«C
CE )'«V
(V j-
1 1 1 1
1 1 1 1 1 1 1 1
1 1 |
IS
j-H'vjrf
w 19
j_ "t^THrf
5
'0
z l0
m
iô/iF
,t» H-
Ij
1 1
]<ff
1
S u 5
I
i
BASE-TO-EMITTER VOLTAGE 1VBE ) —V BASE-TO-EMITTER VOLTAGE (Vfcj) —

92CS-I9902
Fig. 9— Typical transfer characteristics Fig. 10— Typical transfer characteristics tor
Fig. 1 1— Typical output characteristics for
for 2N3771. 2N3772, 2N6257and RCS2S8.
2N3771.
COLLEC TOR TO- EMI1 TE COLLECTOR- TO-E MIT TER VOL rAGE (VC e'-
> VOLTAG e'- 4V
m PI =?$rffl
f* £f
OB
« 0.S
=r 0.8
i" S $## TrT

— fat
0.7
Joe
::: «'*&! Io..
:::-
t
M — raSjl SH •Hi
Si!
5 =~ -•*? -T
nn rrrl
al
04 -fit*. |o.«
a
3 0.3 T= pHi iiii
.;
N = V
5 0.3 wk
0.2
=:: ::::
= :: : ;:;
Hff
::: :;•:
riii
8 0.2 5£ ÊBB TTTt
O.I
8 0.I
frL :;;:
m ^ =ffl n s w tS ^rr
BASE-TO-EMITTER VOLTAGE (V BE I-V

BASE-TO-EMITTER VOLTAGE (V B el — V COLLECTOR-TO-EMITTER VOLTAGE (VCE I—
92CS-I3IM
Fig. 12— Typical input characteristics for Fig. 13— Typical input characteristics for Fig. 14— Typical output characteristics for
2N3771 and2N62S7. 2N3772 and RCS258. 2N3772, 2N6257and RCS258.
104
POWER TRANSISTORS
2N3773, 2N4348, 2N6259

Hometaxial-Base, High Current Silicon N-P-N Transistors
Rugged High-Voltage Devices for Applications Features:
High dissipation capability -
and Commercial Equipment
in Industrial
120 W
(2N4348), 150 (2N3773). 250 W W (2N62S9)
5-A specification for hpE. VflE. * VcE<»t) (2N4348)
8-A specification for
These RCA types are hometaxial-base silicon n-p-n tran- converters, inverters, and solenoid (hammerl/relay driver
sistors intended for a wide variety of high-voltage high- service-.
"FE. VBE. & VcE(sat) (2N3773, 2N6259)
current applications. Typical applications for these tran- VCEX-

These devices employ the popular JEOEC TO-3 package;
sistors include power-switching circuits, audio amplifiers,
they differ maximum 140 V min (2N4348). 160 V min (2N3773I
in ratings for voltage, current, and
series- and shunt-regulator driver and output stages, dc-to-dc
power.
170 V min (2N6259)
Low saturation voltage with high beta
2N4348 2N3773 2N6259
"COLLECTOR-TO-BASE VOLTAGE v CBO 140 160 170
COLLECTOR-TO-EMITTER VOLTAGE.
With base open ^CEO 150
With reverse bias (V BE of -1.5 V
I V CEX 170
"EMITTER-TO-BASE VOLTAGE V EB0
"COLLECTOR CURRENT: |
c
Continuous
Peak
*BASE CURRENT: l
B
Continuous JEDEC TO-3
Peak
"TRANSISTOR DISSIPATION: PT
At case temperatures up to 25°C } ISO 251
* Tj MAX..20O"C
"TEMPERATURE RANGE:
Storage & Operating (Junction) 65 to +200 i I00
*PIN TEMPERATURE (During Soldering):

At distances >
1/32 ir\, 10.8 mm) from case for 10 s max 230 Ss !
In accordance with JEDEC registration data format (JS-6, RDF-2). i
<•
fr
*
^ 'o.
X?.
CASE TEMPERATURE <T C ) = 25*C 5 \ V
5 « 1 10* s 2
(CURVES MUST BE DERATED LINEARLY i o«
WITH INCREASE IN TEMPERATURE.)
Fig. 2 - Thermal-cycle rating chart for 2N3773.
100
1 1
1
1 1
* *
\ 1
X^p
1
5-
X
\^ yO
jjj
*
I v X>3
X"
*,
\
10 \ 5, \ e 2
Fig. 3 • Thermal-cycle rating chart for 2N4348.
1 l
! 1 1 i ! !
1 !
9 __ F Tj MAX .200-C .
i j i
2
' 00
V \ jsT<«- i
\
1
<
**,
2 k\ x !
i
1 ^s!
*
hXft> '
il \ 1
0.1 r^s
10 "IOO 200
COLLECTOR-TO-EMITTER VOLTAGE (V^) —V M6ER OF THERMAL CYCLES
Fig. 1 • Maximum operating areas for 2N3773. Fig. 4 - Thermal-cycle rating chart for 2N6259.
105
V 5 V ^
POWER TRANSISTORS
2N3773, 2N4348, 2N6259

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)-25°C Unless Otherwise Specified

V dc A dc 2N4348 2N3773 2N626S
VCE V BE 'C •b Min. Max Min. Max Min. Max

ICBO - ... " 2 - - mA
With emitter open, V CB -140 V
120 -1.5 ~ 2
With base-emitter
'CEX 140 -1.5 : 2 1 mA
junction reverse-biased
150 -1.5 0.2
With base-emitter 120 -1.5 ~ 10 ~

junction reverse-biased l
CEX 140 -1.5 10 - mA
endTc - 150°C 150 -1.5 4
100 20 -
With base open 'CEO 120 _ 10 _ 2
mA C0LUECTOR CURRENT (I c ).
'EBO -7 - 5 - 5 - 2 m'A Fig. 5 • Typical dc beta characteristics for
4 5" 15 60 2N3773.
4 8" 15 60
DC Forward Current
"FE 2 8» 15 60
Transfer Ratio
4 10» 10
4 16" 5 10
COLLECTOR-TO-EMITTER VOLTAGE IV CE I>4V
-^200 1
Collector-to-Emttter
Sustaining Voltage: - iao
V CEX lsus) -1.5 0.1 140 160 170 V
With base-emitter junction 3 160
reverse-biased (R(JE = 100!!)
"\ i
l4 ° :ase te» PERA

1 I
VcerIsus) 0.2» 140 ,150 ^ 160 " V 1 120

resistance IRbeI " 1001!
> !
With base open 0.2" 120 - 140 150 - V i wo , J
VcEO'susl
1-
25*e
\
Base-to-Emitter Voltage vbe
4
4
2
5a
8»
8" "
2
"
2.2
2
V
1
\^ ^
4 10* 3 N
*.
5»
8a
0.5
0.8
1
1.4 1
V
.... g — 1 1
—
Saturation Voltage V CE lsatl 10» 25 - 2 - "
1
COLLECTOR CURRENT II C 1— *
16» 32 4 25
Second- Breakdown Fig. 6 • Typical dc beta characteristics
Collector Current
With base forward-biased and IS/b b " -
A for 2N4348.
80 1.5
1-s nonrepetitive pulse 100 1. 2.5
Second-Breakdown Energy
With base reverse-biased and Es/b c -1.5 2.5 0.125 0.125 - 0.125 " J cou ECTOR-TO-E MITTER VOLTAGE (V CE ).'2V Mil
L MOmH, R BE = 100!! ^200
It
'<
1 II 1
INI
Megnltude of Common-Emitter,
Small-Signal, Short-Circuit,
4 1 4 " 4 - 4 " |'«o
\J nc
|h,e|
Forward Current Transfer <
S
Ratio If' 50kHzl
l2 °
Common-Emitter, Small- 1 \
25*C,
hfe 4 1 40 - 40 " 40 - * A\
Forward Current Transfer
$ »0
Ratio If 1 kHz)
\\
Thermal Resistance s
R " 1.46 " 1.17 " 0.7 oc/W
0JC
Junction-to-Case
r° Ns
EDEC registration data for JS-6 RDF-2. »
n - 300fit, rep. rate - 60 H
8
V
>J^~
b,
S/b '» defined :
t
transistor operation in the active region.

urrent at which sacond break down occurs at a specified co /oltage with the emitter base junc A 1
1
T
< 1 1 2 1 s • 1
c defined as the energy at which second break conditions. E S/b 1/2L|2

Es/ D is >ias i
leakege inductance and is the peak collector currer

I
Fig. 7 • Typical dc beta characteristics

for 2N6259.
II COaiCTW-TO-OltlTTOtVOLTlWtfvfctlMV f:j
V
UHjiiijjgp
10
r
:
)*i Swrgp'fj f-
1
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$ •
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X
• W- iiu%T a
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sj
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l|
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fe
L.:::
t
T: : :
fill! :i|:: :[i~ iili
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4:::
:•_-.
•AK-T0-EHITTER VOLTAGE (Vul—

HSS-32H
8AM-T0-CMTTER VOLTAGE (V u l— AU-TO-EMITTER VOLTAGE I Vj£l-V
•2CS-ISSST
Fig. 8 • Typical transfer characteristics for Fig. 9 Typical transfer characteristics Fig. 10- Typical transfer characteristics for
2N3773. for 2N4348. 2N62S9.
106
POWER TRANSISTORS
2N3773, 2N4348, 2N6259

CASE TEMPERATURE (T ) = 25°C
c ' f~*-r
WITH INCREASE IN TEMPERATURE.) H^t
T
^12.5
!U'
r? "TT 3:. sa 5e' CURRENT (Ijl- 500 mA 4;

;
:
5 10
-fj f- 400 wa -4--
ir
75
200mA; + ;
5
tjc
d
50 mA ; + ;
2.5
Fig. 12 Typical output characteristics

for 2N3773.
CAS
£
">
S mA
=
T.5 300 mA :
:200 mA:::
u » loomA:::
-50mA ---
" 2.5
"
10 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE )—
Fig. 13 - Typical output characteristics for
Fig. 1 1 - Maximum operating areas for 2N4348. 2N4348.
£12.5
BASE CURRE NT IB-600mA :: = =
"TT : 400 mA :: :
° 75
u 5
W-ômA;::::
2.5
H± 4ttUt
Fig. 15 Typical output characteristics for

2N6259.
"CER CASE TEMPERATURE (T C )«25'C
l*i
JJ»
V CEO
Sa
^J I
'CEO
> I40
«CER
I* iA.
Hi no
\j»
VCEO
68
4 68|Q 2 *»«>«» I00
6 !
EXTERNAL BASE -TO-EMITTER RESISTANCE (RgE* —

COLLECTOR -TO- EMITTER VOLTAGE (V C £)—
92CS- 19561 F/'gr. 76 - Sustaining voltage as a function of
Fig. 14 - Maximum operating areas for 2N6259. base-to-emitter resistance for all
types.
107
POWER TRANSISTORS
2N3773, 2N4348, 2N6259

COLLECTOR CURRENT /BASE CURRENT (I
B
>- 10 10 COLLECTOR CURRENT (Xc)
BASE CURRENT 11,1
» 10
/?— C0LLCC1...
1
.
1
>-'--•
r- l
» "^
7;^
'
/ •
CASE TEMPERATURE <TC )*25*C ^ y

/' | x
/>
'
<
l
'/
T
/
1
1 CASE TEMP (T
F
1 ' 25"C '/ CAS£TEMPERATUREITc)"25* C
/A
f
/x
/
125' :
1 1
^^125-C
\
/
/
t
K I25»C
=
'
j5 1 //
^ g e /
,' J
/
/ /
/
2 / 1 \ 2
O.I
// 0.1 / 01 //
V.UI U.I u.vi u..
COLLECTOR-TO-EMITTER SATURATION VOLTAGE Wee (lot)J— COLLECTOR-TO-EMITTER SATURATION VOLTAGE k^Mtil— COLLECTOR-TO-EMITTER SATURATION VOLTAGE I VCE<««t>|— V
92CS-I9S54
Fig. 17 - Typical saturation-voltage Fig. 18 - Typical saturation-voltage Fig. 19 - Typical saturation-voltage

characteristics for 2N3773. characteristics for 2N4348. characteristics for 2N6259.
O.S I I.S 2
BASE-TO-EMITTER VOLTAGE (V BE I — BASE-TO- EMITTER VOLTAGE (V BC )—
Fig. 20 - Typical input characteristics for Fig. 21 - Typical input characteristics for Fig. 22 - Typical input characteristics for
2N3773. 2N4348. 2N6259.
108
C
POWER TRANSISTORS
2N3791,2N3792
Silicon P-N-P Epitaxial-Base High-Power Transistors
The RCA-2N3791 and 2N3792 are epitaxial- pation capability of 150 watts at case Maximum safe-areas-of-operation curves
base silicon p-n-p transistors featuring high- temperatures up to 25° Hermetically sealed JEDEC TO-204MA
package
gain at high current. They may be used as
They differ in voltage ratings and in the
complements to the n-p-n types 2N3715 and High gain at high current
currents at which the parameters are con-
2N3716, respectively. These devices are in- JEDEC Thermal-cycling rating curve
trolled. Both are supplied in the steel
tended for medium-speed switching and
TO-204MA hermetic package.
amplifier applications and feature a dissi- APPLICATIONS:
i
i
Maximum Ratings, Absolute-Maximum Values:

i
2N3791 2N3792
* V CBO -60 -80 V i
Solenoid drivers
* V CEO -60 -80 V
* V EBO -7 -7 V
* -10 -10 A TERMINAL DESIGNATIONS
'c
* 'CM -10 -10 A
* -4 -4 A
'B
* PT
T C <25°C 150 150 W
Tc > 25°C derate linearly
* T J- T stg -65 to 200 °c
• •
JEDEC TO-204MA
-10
8
SO M MC. BR LESS -?\

< 290 pue
1 SOOfMC
Imicc -
SmttcT 3D-C S'
Z
to
0.8
K
O
°- 6
o
°*
8
0.2
CASE TEMPERATURE (T C )-ZS*C
-0.1 1 1 1
-20 -40 -60 -80 -100

COLLECTOR-TO-EMITTER V0LTA6E <VCE >— V COLLECTOR -TO- EMITTER VOLTAGE (^gl—V
92CM-50I2I
»2CM -30120
— Maximum operating areas Fig. 2 — Maximum operating areas for 2N3792.

Fig. 1 for 2N3791.
109
V A A
POWER TRANSISTORS
2N3791,2N3792
ELECTRICAL CHARACTERISTICS, at Case Temperature

(Tq) - 25°C Unless Otherwise Specified

VOLTAGE CURRENT
CHARACTERISTICS Vdc Adc 2N3791 2N3792 UNITS
VC E v B e •c >B Min. Max. Min. Max.
-60 1.5 - -1
*
'CEX _ _ _ -1
mA
-80 1.5
-60 1.5 - - -5 29 SO TS 100 129 ISO ITS 200

Tc = 150°C
_ -5 CASE TEMPERATURE ITC I— 'C
-80 .1.5 92CS- 22434
-30 - -10 -10

*
ceo _ _ -10 _ -10
mA Fig. 3— Derating curve.
-40 ,
* 7 - - - -5 - -5 mA IOO
'ebo s
* V CE0 (sus)b -0.2 -60 - -80 - V >

•
1
v^
-2 -1 50 150 50 150 I Nfc
S 4
* h FE a -2 -3 - 30 30
O
5
X
I 1
-4 -10 4 4
\
<&
* VBE
-2
-4
-5
-10
- - -1.8
-4.0
- -1.8
-4.0
V
5
1
i
\\\N
\
M— **
*
*
V BE (sat)«
V CE (sat)a
-5
-5
-0.5
-0.5
-
-
-1.5
-1
- -1.5
-1
V
V
•0 n It4 •
x*.
-10 -2.0 -4 _ -4 NUMKR OF THERMAL CYCLES (IN THOUSANDS) (K( . IUTam
* -10 -0.5 - 30 - 30 - KHz

f
hfe Fig. 4 — Thermal-cycling rating chart.
* h fe f = 1 KHz -10 -0.5 - 25 250 25 250
* |h f=1MHz -10 -0.5 - 4 - 4 - |
fe |
1'.
^0 je
tp=1s 40 2.7 - 2.95 - A = lif'
'S/b i
B *
7* i*
* c ob ,
/. €''•
V CB = 10 V - 500 - 500 pF
f=1MHz ! i0'
&*
o *
* R 0JC - 1.17 - 1.17 °C/W
2
* In accordance with JEDEC registration data. S
1
4 *
Pulsed; pulse duration = 200 ms, duty factor = 1 .5%. •ST 1 "
' "- ' •*-»

COLLECTOR CURRENT (!<>—
b CAUTION: Sustaining voltage, V CE0 (sus), MUSTNOTbe measured on a curve tracer.
Fig. 5— Typical dc beta characteristics for both types.
29 COLLCCTOH-TO-CIHTTER VOLTMC (¥cc>— « V

CASE TtMPEftATUftE (T>>*2S*C
A.
E K>
O
i
!•
5
«
'
B t 1 •
oa -an -to -us -is -its -&o 2 s •
BASE-TO-EMITTER VOLTMC lÊ 1- »

92CS-I0979
BASE-TO-EMITTER VOLTME(VeE>— COLLECTOR CURRENT (I c ) — •tCS-IHM
Fig. 7 — Typical input characteristics for both types. Fig. 8— Typical gain-bandwidth product for both types.
Fig. 6— Typical transfer characteristics for both types.
110.
' : : V
POWER TRANSISTORS
2N3878, 2N3879, 2N5202, 2N6500, 40375

Features:
High-Speed, Epitaxial-Collector Maxlmum-area-of-operetlon curves for dc and pulse operation
Rated for safe operation in both forward- and reverse-Mas conditions
Silicon N-P-N Transistors High sustaining voltage
Total saturated transition time less then 1 ia
For High-Speed Switching and Linear-Amplifier. Applications for 2N3879, 2N6202, and 2N6500
RCA-2N3878, 2N3879, 2N5202, and 2N6500* are epitaxial Typical application* for these transistors include: low-distor- TERMINAL DESIGNATIONS
silicon n-p-n transistors. The 2N3678 is an amplifier type tion power amplifiers, oscillators, switching regulators, series
intended for audio-, ultrasonic-, and radio-frequency circuits. regulators, converters, and inverters.
Types 2N3879, 2N5202, and 2N6500 are switching transistors
intended for use in high-current, high-speed switching circuits.
Type 40375 * Formerly RCA 0*v. Type Not. TA2509, TA2B09A, TA7286, end
is a 2N3878 with a factory-attached heat radiator;
TA8S32, respectively.
it is intended for printed circuit-board applications.
JEDEC Toee
MAXIMUM RATINGS, Absolute-Maximum Values: 2N3878, 2N3S79, 2NS202, 2N«S0O
2N3879 2N5202 2N6600
•COLLECTOR-TO-BASE VOLTAGE VCBO 120 100 120
With external base-to-emitter resistance (Rgg) =50U. Vcer(sus)
With base open V C EOl«"«l
•EMITTER-TO-BASE VOLTAGE VEBO
•CONTINUOUS COLLECTOR CURRENT .... ic JEDECTO-WwKhl
PEAK COLLECTOR CURRENT 'CM 40376
•CONTINUOUS BASE CURRENT !
B
•TRANSISTOR DISSIPATION
At case temperature (Tr;) 25°C 3S (2N3878I 35 36
(HEAT RAOIATOftl
At case temperatures above 25°C Derate linearly at 0.2 W/°C
At ambient temperature (T^) ' 25°C . . . S.8 (40375)
For other conditions
See Figs. 1,2,3, and 5
Storage & operating (Junction) -65 to 200
•PIN TEMPERATURE:
1/32 in. (0.8 mm) from seating plane for 10 s max. .
In accordance with JEDEC registration data format JS-6 RDF-2 (2N3878): JS-6 RDF-1 (2N3879, 2NS202. 2N6500).
KT .IHITED
K
ill
m^ •4»ai
SMKT1VI CASE TWf OK C»SI TS»P (T,

pf
0« T l— 'C
c
Note: Use ambient temperature for derating 40375.
Fig. 2- Dissipation derating for all types.
10a
100 CASE TEMPERATURE (T C )»2S*C
t
(CURVES MUST BE DERATED LINEARL tW Wm
6 WITH INCREASE IN TEMPERATURE) T •
•S Ej m
4
iift Tr
r 31 fil
I
*
'•!
6 ^Vel^
!V*
-**
^s
~ fr'; « s^V
2
irTT.
-
=-
~:
~r.
§M
Bi\ iiml?fi *H!
lli }
!
: V
r i:l
§ ; *«v>»^
I C < «A> .) PI LS ED
mt^ ¥
-F ;
T
1:.:
:
' :
^Sv
1".
o 1
'
Hfti (\ fflj il
w ""li
i O.S
i
«'' '
'
a
ifii:
....
i :
2
r^
Vciol"*«>'OV-
't<
t! 6 tin1 aot
L ilfWilfi (!!!!
1- 1
9 * 101
z
UJ 4
CONTINUOUS:! % trtt
•
| nirnffl
1 1: l'i;:. COLLtCTOH-TO-HIITTlR VOLTAOE (VcE' —v
Of
3
U 'i± »
^^
<
%Si M h Hari
f HTlffi
1!'
t jlllll 1 •;:!
:!
:
i;::
:i!;
:
r T : :
Fig. 3 - Maximum operating areas for 40375.

•tSS-t?T?«I
V»
i
'
s *
5 leal 9Ki * 3 mail!:
\- i 10 me;-;:
u : : I :
ID
O 1
-
:* F OR
N ON
SI vO LE
»F TIT VE
: : ltT
i<q i 100 maf;
-^
° PULSE r- -rrrz
~
8 Z
^vJS3 !
\.: : . -Jlu
e |
. 1 >.ll
~i
i :#H js; .: [1 1 tlS/b-LIMIT! D
4
•
.? c
r : ^ rT: S If "
Hi: ::: 5 : : : i -H::;
'
nir ! i . i ill! :'
;•:; : T i :
..::-i : : i L|i! 1=1: - ;:;: •••: ::: : i :

•
2
^_l Sir /CE0(M AX. •5(>v*m ™ 11 ; !
~ -J
i : : I
— -:. - ;
0.1 "TV
j= — ...._.
:.ijtt:rti :, l:iiS i iii::
4
i::::
6
.t i :
8,000
10 too
COLLECTOR-TO-EMITTER VOLTAGE <Vce> — V eASX-TO-CMITTC*. VOLT»0E ( V Bt )—
92CS-25755 •tcs-isti?
Fig. 4 - Typical input characteristics

Fig. I - Maximum operating areas for 2N3878. for all types.
111
POWER TRANSISTORS
2N3878, 2N3879, 2N5202, 2N6500, 40375

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) • 2S°C unless otherwise specified:

VOLTAGE CURRENT 2N387S 2N387S 2NS202 2NSS0O UNITS
CHARACTERISTIC SYMBOL Vde Adc 4037S
V C E VBE c >B Min. Mix. Min. Max. Min. Max. Min. Max.
Collector Cutoff Current: - - '- -

100 -1.5 10
With base-emitter junction reverse- 110 5
biased 120 -1.5 25 25
'CEV mA
With base-emitter junction 100 -1.5 - 4 - 4 - 10 ~
reverse-biased and Tq = 1 50°C 110 10
40 - 5« - 5 -
With base open 'CEO 5
mA
70
-6 - - " 10 -
Emitter Cutoff Current 'EBO -7 25
mA
10 10
Collector-to-Emitter Sustaining
Voltage V CE0 (sus) 0.2 50a 75e 50= 90 a
With base open
V
02 65a 90" 75 a 110=
resistance (R B e) = 50 !! VCER ,SUS '
1.2 4" 10' 100*

2 05 b 40* 200*
3" 15' 60'
DC Forward-Current Transfer
h
2
Ratio FE 2 4" 8- ,12- 100'
5 4" 20 20 80
5 0.5" 50* 200' 40
Collector-to-Emitter 3" 03 1.5

V CE lsatl V
'
Saturation Voltage 4" 4 2 1.2 1.2
Base to-Emmer Voltage VBE 2 4b 25 V
Base-to-Emitter Saturation 3" 3 25

V BE lsatl V
Voltage 4" 04 2 2
Collector-to-Base Output
Capacitance : c ol) 176 175 175 175 ,iF
II = 1 MHz, V CB = 10 V)
Second Breakdown Collector Current.

With base forward-biased and 'S,b 40 750 500 400 400 mA
1-s nonrepetitive pulse
Second-Breakdown Energy:
With base reverse-biased and
R BE =50 Si. V BB = -4 V E S/b
C mj
At L =50»iH 04
At L = 125 uH 1 1 05
Magnitude ol Common Emitter,
K| 10 05 4 4 6 6
Forward-Current Transfer
Ratio:(f = 10 MHz)
Short-Circuit, Forward-Current 30 0.1 40
"fe
Transler Ratio:(l = 1 kHz)
Thermal Resistance: 2N3878

Junction-to-case R ()JC 5 5 5 5
I °c/w
40375
Junction-to-ambient r 0ja 30
I
b
* In accordance with JEDEC registration data format JS-6 RDF-2 Pulsed, pulse duration - 300 us, duty factor < 2 %.
(2N3878I; JS-6 RDF-1 (2N3879, 2N5202. 2N6S00).. Es/b defined as the energy at which second breakdown occurs
is
8 CAUTION: Sustaining voltages Vceo' sus ' snd V CER<I* U*) under specified reverse-bias conditions. Es/b " 1/2L|2 where L is a
NOT be measured on a curve tracer. series load or leakage inductance and is the peak collector current.
I
TRANSITION AND STORAGE-TIME CHARACTERISTICS FOR SWITCHING TYPES, At Case Temperature (Tc) ~ 2SPC:

VOLTAGE CURRENT
CHARACTERISTIC SYMBOL Vdc Adc UNITS
2N 1879 2N 5202 2N41600
V CC 'C IB Min. Max. Min. Max. Min. Max.
Saturated Switching 30 3 0.3" - 40

Time 30 4 0.4" : 40 1
*d
a 40
30 4 0.8
Delay time
30 3 0.3* 400
Rise time 30 4 0.4 a " 400 - -
r
a
30 4 0.8 400
ns
30 3 0.3» 1000
Storage time l 30 4 0.4 a " 800 - -
s
30 4 0.8s 1200
30 3 0.3s 500
Fall time 30 4 0.4* - 400 - -
•f
30 4 0.8a 400
In accordance with JEDEC registration data format [JS-6, ROF-1) 'B,

" '8
2
112
POWER TRANSISTORS
2N3878, 2N3879, 2N5202, 2N6500, 40375

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) 10 V
CASE TEMPERATURE (T c - 25'C )
» 100 N »
k
h 80 \
3 \
£ k
60
V
1 40 \
% 20
COLLECTOR CURRENT (!<;)-
Fig. 6- Typical gain-bandwidth product

for all types.
_ l75 COLLECTOR TO-E " TER V EI«CE "

,.
- 150 |
>
^•"'
'"
£ r
3 ioo — A t-
5 75
CASE TEMPERAT JR E(T C I
— -,
25'C
\\ ....
s0
« 6 e z 4 e s o
| | 00
COLLECTOR-TO-EMITTER VOLTAGE! VcE>—
92CS-23756
o
°
«
-55°C
^
i
Fig. 5 - Maximum operating areas for 2N3879, 2N5202, and 2N6500.

COLLECTOR CURRENT del— A
Fig. 7 - Typical dc beta characteristics for

2N6500.
vvL*
1,
| | |
TTT^V^fHiH' *tT
[| 1,1 1., £M 1
I
*
W&&
I
g 2
COLLECTOR-TO-EMITTER VOLTAGE IV C E
BASE-TO-EMITTER VOLTAGE (V^)—
F/y. S- Typical transfer characteristics Fig. 9- Typical output characteristics for Fig. 10 - Typical output characteristics for
2N3878, 2N3879, 2N5202and 2N6500.
for all types.
40375.
CASE TEMPERAT IME Tc )-2 5'C g CAS E T EMP RA1 URE Tel 25 •cttttjIIIIIIIIIIIIH
:
iW :::
"^"ilottttflH
1 25 Sil
'
WWW Ti:
11 i •iij iif
T Jfflffffi I •:: •!•:
2
si "111:
n
::::
if
It 111 +- IS
S* 11 [ H If
s
^5 l» HP 1 i! ill lii
i
JHi :: ,,' ::i
i"''ln [HI rpffr
"^ mffi &n •= «a i W
:
fe #?
ft
hih-TOittttp jffj
8S WS 5p
s
0j<
rr#fi
mitttti
:'::
iP r " ^ **:H
|fS
4-t
T+f -ftr
1
1 o.
.-.'.
::;:
^ $ ;
.
:;;;
[H!
WW
,
1
'l-ilfMir 1I \l
l ?
if
~t w-
f::i g£ ftfi iii
i J i
COLLECTORCURRENT(Ic)-A 92CS-I32M
COLLECTOR CURRENT del —
Fig. II - Typical saturation-voltage
characteristics for 2 N 3878, F/'ff. /2 - Typical saturation-voltage Fig. 13 - Typical saturation-voltage
and 2N3879. characteristics for 2N5202. characteristics for 2N6500.
113
POWER TRANSISTORS
2N3878, 2N3879, 2N5202, 2N6500, 4305

m\7oammim . IOOOPULKS/1 CAIC TEMHRATURE tTe) «»*c 1 1 1 1 1
1
1 1 1 1 1 1 1
1
1 1 II 1 1 1 1 1
1
1
1000 Ui--im-ic'*i
t
nsoo
1 I
:K:::?iKs:::-?;K::|:»3ii!!?:^::::::::
r Si
J 100
jjffiw+t
••
iliii!
i z i «
COLLECTOR CURRENT del—* COLLECTOR CURRENT <I C ) — MCS-i COLLECTOR CURRENT (Irl— A
92CS-I32
Fig. 14 - Typical turn-on time for Fig. 15 - Typical storage time for Fig. 16 - Typical fall time for 2N3879,
2 N 387 9, 2N5202. and 2N3879, 2N5202, and 2N5202, and 2 N 65 00.
2N6500. 2N6S00.
114.
*
POWER TRANSISTORS
2N4036, 2N4037, 2N4314, 40391, 40394, 41503
Medium-Power Silicon P-N-P Planar Transistors

Features:
General-Purpose Types for Industrial and Commercial Applications
2N4036? are p-n-p \2N2102
These RCA types are double-diffused, Type 41503 is suitable for low-power,
2N40371 complements of [2N3053
epitaxial-planar, silicon p-n-p transistors; low-cost industrial and audio uses, and Gain-bandwidth product
they differ in breakdown-voltage ratings, may be employed as the p-n-p comple- (f
T ) = 60 MHz min.
leakage-current, and saturation character- ment to RCA n-p-n type 41502. High breakdown voltages
istics.
Maximum-area-of-operation curves
The 2N4036, 2N4037, 2N4314, 40391, Planar construction provides low
and 40394 transistors are intended for a Types 2N4036, 2N4037, 2N4314, and noise and low leakage
wide variety of small-signal medium-power 41503 are supplied in the JEDEC TO- 39 Low saturation voltages
applications. With a minimum gain-band- hermetic package. The 40391 is a 2N4037 High pulsed beta at high collector
width product (fj) of 60 MHz, these with a factory attached heat radiator, current
devices provide useful gain at high fre- intended for printed-circuit-board appli- Fast switching (2N4036)
quencies. In addition, the 2N4036 is use- cations. Type 40394 is a 2N4037 with a TERMINAL DESIGNATIONS
ful in high-speed saturated switching ap- factory-attached diamond-shaped mount-
plications. ing flange.
JEDEC TO-39
2N4037 2N4036, 2N4037
MAXIMUM RATINGS, Absolute Maximum Values: 2N4036 40391. 40394 2N4314 41B03 2N4314, 41503
•COLLECTOR-TO-BASE VOLTAGE V CB0 -90
With 1.5 volts (V BE of reverse
I bias. V CEV (sus) -85
(R BE X200n V CER (sus) -85
* With base open V q E q(sus) -65
*EMITTER-TO-BASE VOLTAGE V EB0 -7
'COLLECTOR CURRENT I
c -1.0 -1.0 -1.0
•BASE CURRENT I
B -0.5 -0.5 -0.5
JEDEC TO-39 with Flange
At case temperatures up to 25°C 7 7(2N4037) 7 40394
7(40394) -
At free-air temperatures up to 25°C 3.5(40391) 1
1 (2N4037, 40394) -
At temperatures above 25°C — Derate linearly to 200°C-
'TEMPERATURE RANGE:
Storage & Operating (Junction I
•LEAD TEMPERATURE (During soldering):

from seating plane for 10 s max B JEDEC TO-39 with Heat Radiator
lith JEDEC registration data format IJS-6 RDF-1 2N4036: JS-9 RDF-2 2N4037, 2N4314I. (HEAT RADIATOR) 40391
COLLECTOR- ro- EMITTER VOLTAGE tW .-io v

^
(Vfc-)"-2 V COLLECTOR-TO-EMITTER VOLTAGE (Vr_)--IOV
^ — «
>
l. r .
AMBIENT TEMPERATURE IT 4 I-2VC AMBIENT TEMPERATURE (T A 1 * 23*C — I20
I
**
.>
N\
SO 80 * IOO
a; ^S \
2 N40 6
£| 6 * an fct a'- S'C \
jjjfreo —
V"
OS 7, 2N43
*
V ^
<g!
tF*
\
n >
\ 5« 4 °
S 60
„\
JJ
\
1
\ Y 40
,*S"C
gElO
\V gf20 *
t
20 \
o
V
\\ \\ V\
9
* O \
COLLECTOR CURRENT (Ic)-mA COLLECTOR CURRENT (Zc>-mA
Fig. 1— Typical dc-beta characteristics for Fig.2— Typical dc-beta characteristic for Fig.3— Typical dc beta characteristics
2N4036, 2N4037and2N4314. 41503. for 2N4037 and 2N4314.
115
& —
POWER TRANSISTORS
2N4036, 2N4037, 2N4314, 40391, 40394, 41503

ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) • 25°C Unless Otherwise Specified
< : COLLECTOR- TO-BASE VOLTAGE (VCB I — 60 V
••-'40 V
TEST CONDITIONS LIMITS : ^-20V

~
CHARACTERISTIC SYMBOL VOLTAGE

CUR-
RENT
2N4037
40391 UNITS a
t
10 '-
: ^\
V dc 2N4036 2N4314 41503
mA dc 40394 :
VC B VC E Ê 'C MIN. MAX MIN. MAX. MIN. MAX MIN. MAX £ IO
3
-15 -2 MA o I0
'CBO -90 -0.1» "ViA :

With emitter open
-60 -0B2 -0.25* -026* /JA
With base open
'CEO -30 - -05* - -5* - -5» - - MA 3 io 5h
:
/#
With base-emitter junction 6
io
reverse biased -85 1.5 -100*
'CEX mA
T c = 150°C -30 1.5 - -0.1* - - - - _ -
7 -0.1* - - - - mA Fig.4— Typical collector-cutoff current
Emitter Cutoff Current vs.
'ebo 5 _ -1*
-0.02 -r» MA
junction temperature for 2N4036.
Collector- to- Base Breakdown *
v (BR)CBO 1 -90 - -60* - -90* - " - V
Voltage (l E -0) -a-
Emitter-to-Base Breakdown
v (BR)EBO -7 - -7 - -7 - -4 - V COLLECTOR- TO-EMITTER VOLTAGE (V cc ). 10 V
Voltage (l E - -0.1mA) FREQUENCY • ZO MHz
AMBIENT TEMPERATURE (T )"25"C
A
Sustaining Voltage:
2 6
With base-emitter junction VCEV (sus) 1.5 -100 -85' - -60" - -85' - - - V
reverse biased
|/
With external base-to- II 4
emitter resistance VCER (sus) -100 -85* -60" -85* V
<R BE )< 200ft
-30 -30* -
» With base open vCEO <su »> V
-100 -65" - -40* - -65* -
i
> Collector-to-Emitter s
V C E(»t) -150 - -0.65 - -1.4 - -1.4 - -1.5 V
Voltage (l
B - -15 mA) 9
•
in .
Base-to-Emitter Voltage V BE -10 -150 - -1.1 - -1J5» - -1.5* - -2.5 V COLLECTOR CURRENT (I
c )- mA
92LS -1257
Base-to-Emitter
Voltage (l
B --15mA) V BE (sat) -150 _ -1.4 _ _ _ V Fig. 5— Typical small-signal beta charac-
-2 -150 20 200 teristics for all types.
-10 -0.1 20
DC Forward-Current
"FE -10 -1.0 15 15
Transfer Ratio
-10 -150" 40 140 50 250 50 250 20 - -eon
-10 -500" 20 8 ASE CUR REN ~
(I BI
Common-Emitter, Small-Signal -500
'•y
Short-Circuit, Forward-
- -
^ S
h fe -10 -50 3 3 3 - - - E
*y «,< *r'
1
„«•
'
(at f ' 20 MHz) ,•>
*\f i
£-x>o ^/
Small-Signal, Short-Circuit, '' :h;
n fe -10 -50 3 - 3 10 3 10 - - Vl /'
|
"'<
Ratio (at f - 20 MHz) O-200 *}
Col lector- Base Capacitance
*
(atf=1MHz, E = Ccb -10 - 30 - 30* - 30* - 30 PF ::::
l OI §-100
Input Capacitance
Cib 0.5 _ 90 _ 90 _ 90 _ 90 PF ::::
Sat. Switching Time* w. :::: ::::
-1.0 -2.0 -3.0 -4.0 -5.0 -6.0

Rise time -30 -150
«r 70 COLLECTOR-TO-EMITTER SATURATION VOLTAGE, VCE (>0I)-V
Storage time -30 -150 600
«s
Fall time
«f
-30 -150 - 100 - - - - - - i?s
Turn-on time Fig.6— Typical saturation-voltage charac-
'on -30 -150 110
Turn-off time
'off -30 -150 700 teristics for 2N4036.
Thermal Resistance:
- 25* 25 (max.) 25 25
Junction-to-Case R 0JC 2N4037 - - AMBIENT TEMPERATURE <T A )-2! •c
UNLESS OTHERWISE SPECIFIED
40394
°C/W -50O 1 ! 1
165 (max.) ;
'
!
i
- 165 2N4037 - 165 - 165
Junction-to-Ambient R 9JA 40394 f -400 H?i« ^? r "i
50 (max.)
40391
- -
£ thn $/
5 -300 /// t'/ /
•CAUTION: The sustaining voltages V CEQ (sus), V CER (sus), and V CEV' $US MUST NOTbe measured
' on a curve tracer.
b Pulsed,
pulse duration « 300 its. duty factor < 2%, i-
if
§[
1
1
•in accordance with JEDEC t
C|
B1 "'B2* 1 5 mA
registration data format (JS-6 RDF-1 2N4036; JS-9 RDF-2 2N4037. 2N4314).
I *8 [i
#/ J i
. , —
- |o °
i '/:'/.'"
//
. Jr\
' ,
yyr/ t\
i
BASE-TO-EMITTER VOLTAGE (VegJ-V

TUT
Fig. 7— Typical transfer characteristics
for 2N4037 and 2N4314.
116
POWER TRANSISTORS
2N4036, 2N4037, 2N4314, 40391, 40394, 41503

AMBIENT TEMPERATURE <T A ) -25'C
-aoo
L#**
-«00
f
**i r-
"5
300 in
I"
D
-4
-3
g -200
"•" 1
^ -I0O BASE CURRENT 1 1 ,).- «iA

1
Mll ....
\ I I
COLLECTOR-TO-EMITTER VOLTAGE <VCE I-V

92LS-I2
Fig. 10— Typical large-signal output

characteristics for 2N4037,
2N4314. 40391, and 40394.
-10 -30 "

""
-100
COLLECTOR-TO-EMITTER VOLTAGE <VC E> —V
'CS-24056
Fig.8— Maximum operating areas for 41503.
-04 -OS -1.2 H.6 -2.0
COLLECTOR-TO-EMITTER VOLTAGE (V CE I-V
CASE TEMPERATURE (Tc )= 25°

(CURVES MUST BE DERATED LINEARLY NORMALIZED! Fig. 1 1 —Typical small-signal output
WITH INCREASE IN TEMPERATURE) POWER -,
2N4037,
characteristics for
MULTIPLIER J
2N4314, 40391, and 40394.
|50 M s
AMBIENT TEMPERATURE (T»|.25'C

1,000
^
1
- JA
''•j
" 100
t1
X 4
* ^^ L. 1
IS
COLLECTOR CURRENT (I c )-nA
Fig. 12— Typical saturated switching times

for 2N4036.
c * • 6 b
-I °-IO -IOO
COLLECTOR-TO-EMITTER VOLTAGE CE
(V ) —V
92CS-I7443
Fig.9-Maximum operating areas for 2N4036, 2N4037, and 2N4314.
117
POWER TRANSISTORS
2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314

Silicon N-P-N and P-N-P Medium-Power Transistors
General-Purpose Types for Switching Applications
Features:
RCA-2N4231A, 2N4232A, and 2N4233A complements to 2N4231A, 2N4232A, and
The 2N4233A. These types are supplied in steel
2N4231A-2N4233A complements of
are multiple-epitaxial n-p-n transistors.
RCA-2N6312, 2N6313, and 2N6314 are JEDEC TO-213MA hermetic packages. 2N6312-2N6314
multiple-epitaxial p-n-p transistors. They are Low saturation voltages
Maximum-safe-area-of-operation curves
Thermal-cycle ratings
MAXIMUM RATINGS, Absolute-Maximum Values: High gain at high current
N-P-N 2N4231A 2N4232A 2N4233A

P-N-P 2N6312* 2N6313* 2N6314*
* V CBO 40 60 80
V CEO (sus) 40 60 80
* V EBO 5 5 5
* l
c (2N4231A, 2N4232A, 2N4233A) . . . . 3

(2N6312, 2N6313, 2N6314) 5
* 'CM (Registered for 2N6312, 13, 14 only) . .
10 A
* l
B (2N4231A.2N4233A, 2N4233A) . . . . 1 - A
I2N6312, 2N6313, 2N6314) 2 A
* P
T T C <25°C 75 W
T C >25°C derate linearly 0.43 W/°C JEDEC TO-213MA
* Tj,T st (2N4231A, 2N4232A, 2N4233A) . . -55 to 200 °C
(2N6312, 2N6313, 2N6314) ...... -65 to 200 °C
* T L (2N6312, 2N6313, 2N6314only)
At distances > 1 /32 in. (0.8 mm) from
seating plane for 10 s max 235
* For p-n-p devices, voltage and current values are negative.
CASE TEMPERATURE(TC )-25*C It

'
^ ^! *» •*»-
(CURVES MUST BE DERATED
IN TEMPERATURE)
I
VwNs> ^
,0-
10
i
'e 1
1
n»
1
i6»
^^_ •
ii«
NUMBER OF THERMAL CYCLE* Me»-»4W
Fig. 2— Thermal-cycling rating chart for all types.
SB0 c DLL EC! OR- T0- EMITTER

VOLT USE (V CE»-
4V
s
1
5 ioo
z * s^
I .
N <•%>
*-
Z
fi^'
"~"^»
i *
2 « 4 8
0.1
COLLECTOR CURRENT I c )-A
COLLECTOR-TO-EMITTER V0LTAGE(VrF)- V (
92C3-JOST*
92CM-30378 Fig. 3— Typical dc beta characteristics for

2N4231A. 2N4232A, and 2N4233A.
Fig. 1 — Maximum operating areas for all types.*
118
A A
POWER TRANSISTORS
2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) - 2S°C
unless otherwise specified
TEST CONDITIONS* LIMITS U

VOLTAGE CURRENT 2N4231A 2N4232A 2N4233A N
CHARACTERISTIC
Vdc Adc 2N63124 2N63134 2N6314* 1
T
VC E VBE c "B Min. Max. Min. Max. Min. Max. S
'CBO 40» 50
60» - - 50 -
80« 50
JUA
'CEX 40 -1.5 100 —
r be = ioon 60 -1.5 - 100 -
-1.5 4 s
80 100 -01 -I
— — — COLLECTOR CURRENT (I c )-/k HCI-KMO

R BE =100J2, 40 -1.5 1
T c = 150°C 60 -1.5 1 Fig. 4 Typical dc beta characteristics for
80 -1.5 2N6312, 2N6313,and2N6314.

1
mA
30 1
ceo 50 - - 1
- COLLCCTOM-TO •UMTTBt VDLTAkK (Vfc|)i 4V
70 1
f"
'ebo -5 - 0.5 - 0.5 - 0.5 l:
hFE 2 3«> 10 10 10
2N4231A.2N4232A, 2 1.5C 25 100 25 100 25 100
2N4233A 2 0.5C 40 40 40
4 5C 4 4 4
2N6312,2N6313, 4 3c 10 10 10 z
2N6314 4 1.5C 25 100 25 100 25 100 3 «
4 0.5C 40 40 40 2
VB E A 4 1 2 t
2N4231A, 2N4232A, COLLECTOR CURRENT 1I C I—
2N4233A 2 1.5C - 1.4 - 1.4 - 1.4 •KS-K474
2N6312, 2N6313, Fig. S— Typical gain-bandwidth product for
2N6314 4 1.5C 1.4 1.4 1.4 all types.*
VcE(sat)
2N4231A, 2N4232A, 3C 0.3 - 2 - 2 - 2
1.5C
V
2N4233A 0.15 0.7 0.7 0.7
5C 1.25 4 4 4
2N6312, 2N6313, - -
3C 0.3 2 2 2
2N6314 ;
1.5C 0.15 0.7 0.7 0.7
VcEO<sus)b 0.1C 40 - 60 - 80 -
Ihfel f=1 MHz 10 0.5 4 - 4 - 4 -
hfe f=1 kHz 10 0.5 20 - 20 - 20 -
- - - MHz
n 10 0.5 4 4 4
Cobo f = 0.1 MHz

2N4231A,2N4233A, 100
2N4233A 10" - 200 - 200 - 200 pF REVERSE VOLTAGE <V R I-V 92CS-SOMI
2N6312, 2N6313. Fig. 6— Typical common-base input or output

2N6314 10« 300 300 300 capacitance characteristics as a function
- - - of reverse voltage for all types.*

R 0JC 2.3 2.3 2.3 °C/W
14 CC LLECTOR SUPPLYV0LTAGE(V cc > 30V
* In accordance with JEDEC registration data format. ttrl- T :
For p-n-p devices, voltage and current values are negative. 12 XQ r'afie' 10
• Vqb value.
b CAUTION: Sustaining voltages Vceo< su$ MUST NOT be measured on
' a curve tracer.
c Pulsed, pulse duration « 300 ms, duty factor = .8%.
[
1 |0.
2
5 OS
Ss
-W» »*•'•
8 04 & li?
i»-°*l
02
-+P--rrrr 4-rH-- --ftfirm -± ::±:

COLLECTOR CURRENT U c I— 9tC<-t4»tS
Fig. 7 — Typical saturated switching characteristics

for 2N4231A. 2N4232A. and 2N4233A.
119
POWER TRANSISTORS
2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314

COLLECTOR-TO-EMITTCR VOLTAM Wct>'4 vffl | | | | | 1 1 1 ft
TEMPERATURE <TC |.25'C
I 2 -H + :: ?»! B2-IC»
i
+H 1
±s 1I1HIIIII1
1 Mm
llllllllllff
06-;
i-P«h£r&;+
TJTtmL'S
£
w
t
3
200
ISO
m
kiiTimiiiiiiiiiiriiiiiiiiii
i
z ;! »/uf
t ttH Si TT^/W/ HtTT
ftj*gj| S 100
-TURN- "P.
T ME WOM) - ±
2--
BASE- TO- EMITTER VOLTAGE IV BE I-V COLLECTOR -TO-EMITTER VOLTAOE (VCE> —V

COLLECTOR CURRENT He! —A 9B.S-55WR2
HLS-353
tfLS-9927m
9— Fig. 10 — Typical output characteristics^'or

F/'g'. 8— Typical saturated switching characteristics Fig. Typical input characteristics for
for 2N6312, 2N6313. and 2N6314. all types.* all types.*
COLLECTOR-TC -EMI' TER VO -TAOIIV J)- 4V
o «
5 T*"'
1
:
^1
$ 2 -J -t-J
TTTTTT"
lA 4. t/+
j
Ttf
BASE-TO-EMITTER VOLTAGE (V BE ) —V
Fig. 11 — Typical transfer characteristics for
all types.
120
A . V
POWER TRANSISTORS
2N4904, 2N4905, 2N4906

The RCA-2N4904, 2N4905 and 2N4906 Maximum safe-area-of-operation curves
are and feature a dissipation capability of 87.5
epitaxial-base silicon p-n-p transistors Hermetically sealed JEDEC TO-3/TO-204MA
fea- watts at case temperatures up to 25°C.
turing high-gain at high current. They package
may They
be used as complements to the 2N4913, voltage ratings and in the
differ in High gain at high current
currents at which the parameters are con- Thermal-cycling rating curve
2N4914 and 2N4915 n-p-n types, respec-
trolled. All are supplied in the steel JEDEC
tively. These devices are intended for medium-
speed switching and amplifier applications TO-204MA hermetic package.
Applications:
MAXIMUM RATINGS, Absolute-Maximum Values
2N4904 2N4905 2N4906 Power-switching circuits
* V CEO -40 -60 -80 V Solenoid drivers
* V CBO -40 -60 -80 V TERMINAL DESIGNATIONS

*
V EBO -5 -5 -5 V
•'c -5 -5 -5 A
*'B -1 -1 -1 A
AtTc <25°C 87.5 87.5 87.5 W

At T c > 25°C derate linearly ns _ w/°c
'Tj.TVtg -65 to 200 _ _ °c
*T L at 1/16 ±1/32 in. (1.58 ± 0.8 mm)
from case for 10 s . ?3R . . _ °c JEDEC TO-204MA
10
. ^s A
6 N ^r
r '
< 4 \° 100
J_
K~
>
i
v
s
\ ô
*
5
£
o
i-
e is s\
V
Z
g
4
^
C 6 nS
V
8
%
-« 5 <
\
M—
2N4904 z
o
U
2
2N4903 8
»
O
2
\\
2N<
AMBIED T TEMP :rat IRE (T Cl-25'C j \
CI '
COLLECTOR EMITTER VOLTAGE (Vcjl-V

92cs _5 | 76
10
114A0J V V
< t
Fig. 1 — Maximum operating areas for all types. NUMBER OF THERMAL CYCLES (IN THOUSANDS) 92CS-I9570M
Fig. 2— Thermal-cycling rating chart.
25 COLLECTOR-TO-EMITTER VOLTASE (VceI—4 V CQLL1CMR-TC-EMITTER

CASE TEMPERATURE (Tr.l'23'C 2 VOtTMC (Vce) --4V
s III
i"
§400
§200
-c TCMF CRATURi
^ S»V
5 >s
2B-C
D
O £ 100
a. so
-40«C
f 10 K 60
o
* A 40
<
" 5
Z 1 20
<
10
1 • 1 I
-0.01 -O.I
COLLECTOR CURRENT II C I — 92CS-I9
COLLECTOR CURRENT dc)-A
-I -l( BASE-TO-EMITTER VOLTAGE (VBE )—
92CS-I9579
92CS-I80O9
Fig. 3— Typical gain-bandwidth product Fig. 4 — Typical dc beta characteristics
for all types.
for all types. for all types.
121
' 1
1
POWER TRANSISTORS
2N4904, 2N4905, 2N4906

ELECTRICAL CHARACTERISTICS, At Case Temperature Tc - 25°C
Unlets Otherwise Specified

CHARAC- Voltage Current
2N4906 UNITS
2N4904 2N4905
TERISTIC Vdc Adc
V C E v Be 'c >B Min. Max. Min. Max. Min. Max.
'CEX -40 1.5 -0.1

-60 .1.5 = -0.1
-80 1.5 -0.1
-2
mA
T C =150°C -4p 1.5
-60 1.5 -2
-80 1.5
'CEO -40 ^1
-60 - - - - -1 - mA
-80 -1
40c
'CBO
60° - - - - - -0.1 - mA
l
E
-0
80C
ebo - 5 -1 -1 -1 mA
V CE0 (sus)b - - -0.2 -40 - -60 - -80 - V
-2 — -2.5 — 55 166 25 166 25 100
h FE a
-2 -5 7 7 7
-2 - - - -1.4 - -1.4 - -1.4 V

VBE a -2.5
— — -2.5 -0.25 -1 -1 -1
V CE (sat) a _ V
-5 -1 : -1.5 _ -1.5 -1.5
fT f-1 MHz -10 - -1 - 4 - 4 - 4 - MHz

f=1 kHz -10 - -0.5 -- 40 - 40 - 40 -
hf e
R 0JC - - - - - 2 — 2 — 2 U C/W
a Pulsed; pulse duration - 300 duty factor - 2%.

i*.
b CAUTION: Sustaining voltage, V CE0 (sus), MUST NOT tie measured on a curve tracer.
'CB-
CASE TEMPEAATU« (Te )^25'C

-eoo COUXCTOH-TO-tMTTIR VOLTMi (Vfcf)--4V |
| | | | | | | | | | | | | | | | | | | | |fr
gj
17.5
-900
i *
400 "B.5
I" r"" Hi Httt"
a S ti Li
a
300
w>H»m sop
S" *«1I4I llll*oo 1 1 1 llll 11 1 II II II 1 1 III! 1 III II 1 II 1 1 1
pflr i»°o ' ''

1 1 1 1 1 1 1 1 1 1 1 r ii 1 1 n 1 1 1 1 n 1 1 1 1
s
g-200 lUJ^J^^^^M /- ''** r *''r Vi> .100 l»A
1 1 |ili|"Hi1**" 1 1 1 1 1 1 1 1^
IT111 1
1
Till 1 M 111 ftTH? i 1 1 1 1 1 1 1 1 1 1 1 1 11 1 1 1 1 1
-no 2.5
nTTmmnm
S
^^^P^^^^-0.75 -to HiS -15
ti 1
10 20 50
1
40
1I
50
IIH
60 70
[II
SO SO
, TTn
100
COLLECTOR-TO-EMITTER V0LTA8E (Vce )-V
92C5-2»00«
Fig. 7 — Typical output characteristics

Fig. 6— Typical Input characteristics
for all types.
for all typas.
122
POWER TRANSISTORS
2N4913, 2N4914, 2N4915

Features:
The RCA-2N4913, 2N4914, and 2N4915 capability of 87.5 watts at case temperature
Maximum safe-areas-of -operation curves
are epitaxial-base silicon n-p-n Hermetically sealed JEDEC TO-3/TO-204MA
transistors up to 25°C.
package
featuring high-gain at high current. They
They differ in voltage ratings and in the High gain at high current
may be used as complements to the 2IM4904,
currents at which the parameters are con- Thermal-cycling rating curve
2N4905, and 2N4906 p-n-p types respec-
trolled. All are supplied in the steel JEDEC
These devices are intended for medi-
tively.
TO-204MA hermetic package. Applications:
um-speed switching and feature a dissipation
MAXIMUM RATINGS, Absolute-Maximum Values: 2N4913 2N4914 2N4915 Power-switching circuits
* V CE0 80 V Solenoid drivers

40 60
* V CB0 . . . 40 60 80 V
* V EBO 5 5 5 V
* 'c- 5 5 5 A
* 'b- •
1 1 1 A
* PT
AtT r ^
o
<25C 87.5 87.5 87.5 W
At
^
Tq >25 C
o
derate linearly — 0.5 — W/°C
* TL
At 1/16 in. ±1/32 in. (1.58 mm 0.8 mm)
from case for 1 $ TERMINAL DESIGNATIONS
* TJ- T na •
io v
<
e
V*
\N?*
>
\
P \
I'.
>\ ^ JEDEC TO-204MA
8 «
V
V- LIMIT FOR N
2N 4914
2N
0.1
AMBIE IT TEMP ERAT URI (T C )-25'C
< ) e
COLLECTOR EMITTER VOLTAGE (VCE )-V

92CS-30I77
Fig. 1 — Maximum operating areas for all types.
"5
COLLECTOR-TO-EMITTER V0LTA6C <VCE )- 4 V
100
COLLECTOR- TO- EMITTER VOLTAK (Vce> • 4V
CASE TEMPERATURE ITC ) • Z5*C
%400 7
i
• CASE
M
TO PERATUHCtTc)-ttS*C
« 200
I
V* .w-c.
J-
o 4 1 100
n _
5
ft. I
% 5 *°
-*o-c
i *
5
S
*
2
I
\\\>1
\ &.
i *° i 3
O
yj § *°
h i -
u 10
a s
10 V «
YF
• 1 • i s I
NUMBER OF THERMAL CYCLES (IN THOUSANDS) MCS-I99T0M COLLECTOR CURRENT (IcJ-A COLLECTOR CURRENT (I c ) —A
92CS-29004
Fig. 2— Thermal-cycling rating chart. Fig. 3- Typical dc beta characteristics for
Fig 4
- ~ Typical 9>ln bandwidth P'°duct for "" 'WW*-
all types.
.123
POWER TRANSISTORS
2N4913, 2N4914, 2N4915

ELECTRICAL CHARACTERISTICS, at Case Temperature T c - 2S°C Unless Otherwise Specified

VOLTAGE CURRENT
CHARACTERISTIC Vdc Adc 2N4913 2N4914 2N4915 UNITS
VC E v B e «C •b MIN. MAX. MIN. MAX. MIN. MAX.
'CEX 40 -1.5 0.1
60 -1.5 - - 0.1 -
80 -1.5 ; 0.1
mA
T C =150°C 40 -1.5 2
60 -1.5 - - - 2 -
80 -1.5 : 2
'ceo 40 1
60 - - - - 1 - mA
80 1
40c — 1
'CBO
60c - - - : 1 - mA
80° 1
- 5 - - - 1
- 1 - 1 mA
'ebo
V CE0 (sus)b - - 0.2 40 - 60 - 80 - V
h FE a 2 - 2.5 - 25 100 25 100 25 100

2 5 7 7 7
V B E3 2 - 2.5 - - 1.4 - 1.4 - 1.4 V
V CE (sat) a - - 2.5 0.25 - 0.75 - 0.75 - 0.75 V

5 1 1.5 1.5 1.5
f = MHz 10 - 1
- 4 - 4 - 4 - MHz
T f 1
h fe f = 1 kHz 10 - 0.5 - 20 - 20 - 20 -
R 0JC - - - - - 2 - 2 - 2 °C/W
» Pulsed; pulse duration = 300 /is. Duty facto' = 2%.

b CAUTION: Sustaining voltage, BV CE0 (sus), MUST NOT BE measured on a curve tracer.
COLLECTOR-TO-EMITTER VOLTAOE (Vce)'* V ^ffitrrtrtj

12
<
llllllllllllltlllllllnillil' °Jgr °tllH
lllllllllllllllllllljjjjjfiy^
II llllllllllll IMlMI^ttitMilW
{•
o
Pllll
MBig^Mlflll
iiiiiiiiiiiiiiiiijjwiîiiiiiiiiniiiiiniiiiiiniiiiiiiiniiiiini
20 SO 40 50 60 70 BOSO 100
—V
COLLECTOR-TO-EMITTER VOLTAOE (VCE >— V BASE-TO-EMITTER VOLTAGE (VbeI
BASE-TO-EMITTER VOLTAGE (VBE )-V
~w.-.»»v.
92CS- 29005 92CS-2»00«
6- Fig. 7 - Typical transfer charactenst.es for all types.
Fig. 5— Typical input characteristics for all types. Fig. Typical output characteristics for all types.
124.
V
POWER TRANSISTORS
2N5038, 2N5039, 2N6354, 2N6496
High-Current, High-Power, High-Speed Silicon N-P-N

Power Transistors
Features:
Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications Maximum operating area curves for dc
and pulse operation
RCA-2N5038. 2N5039, 2N6354, and switching speeds make these devices es-
ls/|,-limit line beginning at 28 V
2N6496 are epitaxial silicon n-p-n power High collector current ratings
pecially sutted for switching-control am-
They High-dissipation capability
transistors. differ in breakdown- plifiers, power gates, switching regulators,
voltage ratings, leakage-current, and dc- converters, and
Fast switching speeds —
inverters. Other recom-
beta values mended applications include dc-rf ampli-
Measured at: 5 A, 8 A, 1 A, 1 2A
levels
fiers and power oscillators. These transis-
The high current-handling capability of

tors are supplied in the JEDEC TO-3
package. TERMINAL DESIGNATIONS
these transistors in conjunction with fast
MAXIMUM RATINGS. Absolute Maximum Values: 2N5038 2N5039 2N6354 2N6496

•COLLECTOR-TO-BASE VOLTAGE V CB0
With -1.6 volts (V BE ) of reverse bias and
external base-to-emitter resistance (R
BE )-100n Vq ex (sus)
(R ) " 500J2, L = 7mH V CEX
BE
With R BE < 50J1 V CER (sus) 110 95 - 130
With base open , V CE0 (sus) 90 75 120 110
*EMITTER-TO-BASE VOLTAGE V EB0 7 7 6.5 7
c 20 20 10 15
'PEAK COLLECTOR CURRENT I
CM 30 30 12 -
B 5 5 5 5
'TRANSISTOR DISSIPATION: PT
At case temperatures up to 2S°C and V(; E up to 28 V. . . . 140 140 140 140
At case temperature of 100°C and V CB of 20 V 80 80 80 80
PIN TEMPERATURE (During soldering)
At distances > 1/32 in. (0.8 mm) *
100
from seating plane for 10 max
|
S
s
5^>
JEOEC T
\\
* In accordance with ragiitration data format IJS-6, RDF-11
g
5 *
"J"
1M- CASE
i
6
TEMPERATURE (Tc) =
(FOR TC ABOVE 2«',
!5»<
DERATE L NEARLY) \\ -
0.05 ms
7 i
i V
^
4 1 1
PUL SE OPERA TI0N* f

IC MAX. (PULSED)
1
i
- 0.1 ms
IC MAX. (CONTINUOUS) •
2
N* ir p NUM6CR OF THERMAL CYCLES
•
^
10 Fig. 2— Thermal-cycling rating chart for all
* >
8 >& \ y.
"
types.
JL
4? 6
p& *\ V \
\
*
jljl
r >
as
\ 1
n
ICMAX. (C0NTINU0USI2N5038. 2NS039
o If
20
1
PvJ oLj 8,1
IS
"•
e max. (continuous) "Vai. X.<>
10 >.
o hV ^
J^S^
u'
o
A
m>
l-< T •
1-
i
e W
'A-l
<s»\
-
3
'• «<
*F OR SIN GIF
S '•
NONREP ETITI l/EP UL E

ls/b - LIMITED-^
VCE [>MAX.= 75 v
— i
-
2 "N5039) 1
-i r
_ MAX.= IIOV1 vao mx- 90VI2N903S)-

VCE0 MAX. =
K5038)
90 V J s
^VrcntU (2N6496)
^ VCC0"AX. IOV (2N64M)~
0.1
(
,1 II
0J
1 )
' 4
(VCE ) —
f
!no°II0 *
COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V

m%mm Fig. 3 — Maximum operating areas for
Fig. 1 - Maximum operating areas for 2N5038, 2N5039, 2N6496. 2NS038. 2NS039, 2N6496.
125
A
POWER TRANSISTORS
2N5038, 2N5039, 2N6354, 2N6496

ELECTRICAL CHARACTERISTICS, At Case Temperature ITq} = 2S°C Unless Otherwise Specified CASE TEMPERATURE <T C ) 25' C
CHARACTERISTICS SYMBOL VOLTAGE

V dc
TEST CONDITIONS
CURRENT
A dc 2N5038 2N5039 2N63S4
LIMITS
2N6496
UNITS
£
i*
z|l2C
ISO
!P 1
s$* 3<
VC E Vf»E 'C >B MkM.MAX. MIN. MAX. MIN. MAX. MIN. MAX.
s£no
vc?R l«i.l _ Vmo (mm)
" - - - - 5 - - mA gjjioo
vCEB lutl
^N,.
V CB =150V
jjJH 1
55 20 *°
8 -
«*J»qJ
With base open 'ceo 70 : 20 mA
100 20 vCE0l•"• ,
z>
110 -1.5 50 * 70 1 1 1
With base-emitter 130 20 S • 1

5L
junction reverse-biased 140 -1.5 " 50
EXTERNAL BASE-TO-EMITTER RESISTANCE (RggH
140 10
'CEV
mA
85 -1.5 10 Fig. 4— Collector-to-emitter sustaining volt-
AtT c = 150°C 100 -1.5 - 10
130 25
tage characteristics for 2N5038.
AtT c = 125°C 140 - _ - - - 20 - - 2N5039 and 2N6496.
-5 5 15
Emitter Cutoff Current -6.5 1 - : 5 - mA
'ebo
-7 50 50 50
2 5* 20 150
DC Forward-Current 2 8" 12 100
hFE
Transfer Ratio 2 10" 10 100
5 2' 50 250 30 250
5 10* 20 100
5 12" 20 100
Magnitude of Small-Signal
Ratio: f = 5MHz kl 10 2 12 - 12 " " 12 "
f - 10MHz 10 1 8
Sustaining Voltage VCE0 (sus) 0.2» 90" - 75" " 120 b - 100" -
With base open
With base-emitter
junction reverse biased and
VCEX (sus] -1.5 0.2 150" - 120 b - " " " " V
external base-to-emitter
resistance (RgE* = 100fi
With R BE < 50ft 0.2 110
b 95" _ 130" ~ 2N5038 and 2N5039.
< ioon
V CER 0.2 : 130" _
Emitter- to- Base Voltage:
- " - 7 - V
l
E = 0.05A v EB0 7 7
= 0.005 A 6.5
COLLECTOR-TO-EMITTER VOLTAGE (VCE )-2V L^ ( | | | |
|
-
2 8" 1.6
- " - - -H-ff H 1 1 1 1 1 1 1 1 1 1 f-"
Base-to-Emitter Voltage VBE 5 10" - 1.8 V
::- o
5 12" 1.8 t
"'•Px
8" 0.8 1.0
1
Collector-to-Emitter 5* 0.5 " 0.6

VCE (satl
Saturation Voltage 10" 1.0 - 1.0 " 1
- V " 2
12"
20"
1.2
5
1.0
2.5 2.5
k
5" 0.5 1.3
Base-to-Emitter 8" 0.8 2.0 i '
V BE (sat) V
Saturation Voltage 10" 1
- - " 2 - 4-Jjr
jott±i
20" 5 3.3 3.3 0.5
Output Capacitance: " " " - pF

Cob 400 400 400 400 II Ml lill
MHz
1
VcB= 10V, f = 1 0.5^ 1 1.5

BASE-TO-EMITTER VOLTAGE (V,£)-
Forward-Bias Second Breakdown 25 ~ 5.5
Collector Current: ls/b 28 5.0 = 5.0 5.0 1 A
I
t = 1s, nonrepetitive 45 0.9 0.9 0.9
Fig. 6— Typical input characteristic for
Second- Breakdown Energy:
-1 " " - " 0:3 - - - 2N6496.
With base reverse biased, E S/b 5
R BE = 51J2, L = 25^H
mJ
RB = 20J2, L= 180mH -4 13 13 - 13 - - ~ -
-4 8 5.7
*
Saturated Switching Time 5 0.5 0.3
(V CC = 30V, 8 0.8 0.5
t
r " - - -
'B^'B^ 10 1.0 0.5 1
12 1.2 0.5 < 25

Rise Time
* Storage Time l
*1
5
8
0.5
0.8
- - -
1
"
1.5
H 20 w >A
WO]
10 1.0 1.5
12 1.2 1.5 " -4+
MS 1 TT*"
Storage Time (No Loadl 0.5 0.5 - - " - " 2 " - 44-
^2 200+
?
5 0.5 0.2
10
fm 5
0.5 ft* °nr
Fall Time
V 8
10
0.8
1.0 - " 0.5 - - S 5
nA
12 1.2 0.5 ,20;;
Thermal Resistance: 10 It) - 1.25 - 1.25 1.25 5 10 15 20 25 30 35 40 45

r «jc - - °C/W COLLECTOR-TO-EMITTER VOLTAGE (Vc e)-V
Junction-to-Case 20 1 1.25
* In accordance with JEDEC registration data format (JS-6, RDF-1 ).
* Pulsed; pulse duration < 350 (is. duty factor = 2%. Fig. 7— Typical output characteristics for
b CAUTION: The sustaining voltages V ce q(susI, Vc ER (sus), and Vc E x(s us MUST NOT
) be measured on a curve tracer.
2N5038.
126
POWER TRANSISTORS
2N5038, 2N5039, 2N63S4, 2N6496

CASE TEMPERATURE (T r ) • 25* C
<*,.
20
i f ij?3o Tjl
5p5£ trr
^J»jo!-}-|-)- :
a to
zap I
;
'
i20H4-4-j-p
4-f- t tr:r.
++>+
:5g£§feMiflifev-
1
I I I I I I I I I ! II II 1 1 1
Fig. 9— Typical output characteristics

for 2NS039.

10 < - . • K)0 for2N6496.
COLLECTOR-TO-EMITTER VOLTAGE (VCE ) —
Fig. 8 — Maximum operating areas for 2N63S4. C«M TIMUMTUM <TC 1.2»»C
. 24 6 « » 12 14 « It 20 21 24
COLLECTOH-TO-EUITTEII VOLTME (Vc£>—
»!CS-J0I2<
ffa. 72 - Typical output characteristics for

2N63S4.
4 6 B 2 4 • • ^/0. 73 — Typical transfer characteristics for

10 100 1000
COLLECTOR-TO-EMITTER VOLTA6C (Vc£>— 2NS038.
Fig. 11 — Maximum operating areas for 2N63S4.
127
POWER TRANSISTORS
2N5038, 2N5039, 2N6354, 2N6496

29
COL4.EC OR- T0- EMIT TER VOLTAGE VCE •5V ~ ":;:•: ~ COLLECTOR -TO-EMITTER
VOLTAOE (VC E 2 V 1
12 ~h o tiii 1 1 1 1 1 1 1 1 in
\:\ iilj
:::;, ..-.- ;ht =i= ffiMI 1 1 1 1 1 1 1 1 1 1 1 1
1 *° - :.:: :_.- it%<?j ^ 5S •':.

::;:
1
S 15
-
-
I:::
•
.-: :
:
-f
f
::?:
£ \ri lH£
-~ HH ~r ~
!=
^
z
I
ill|i|||Jj!
Ln
m
tMlllllllWWffi
j "
'
'
* "
Tit
'
:
: -_- .
a 6
*~ -""
:
1 '° :"•
-::
/ =r:
«
1 1 1 I II
f.
jc
1
•::.- J
o
*5
J/ hi; .:= HH ==
-
::::
™— —
::::
•
2
7^k
BASE-TO-EMITTER V0LT40E (V„)—
Fig. 14 — Typical transfer characteristics for Fig. 15 — Typical transfer characteristics fo< Fig. 16 — Typical transfer characteristics for
2NS039. 2N6496 2N6354.
COLLECTOR-TO-EMITTER VOLTAGE (V
CE ).JV COLLECTOR -TO-EMITTER VOLTAGE <*CE 2V
125
£ ISO
S IO0
2 I2S
\ |
\
,
*'l
S, "
| 100
C st;
E« »E RATUR E (T :) ;
£c N
^
1
>_ 60 •.
k
1" "n \
3 50
:J5. _
I 40
^ »5'C
\s V1
g o
'"
*«0 l "
1
^ *s
1
^
i a i
1
c101 100
3.1
COLLECTOR CURRENT (Ijl-A

i
COLLECTOR CURRENT
n
(I
c l-
COLLECTOR CURRENT II C I —
Fig. 17 — Typical dc beta characteristics for Fig. 18 - Typical dc beta characteristics for Fig. 19 - Typical dc beta characteristics for
2N5038. 2N5039. 2N6496.
COLLECTOR-TO-EMTTER VOLTASE (VcE) = «v

CASE TEMPERATURE (Tc ) = 25»C
!.
3 ra
1"
<0
30
U U.3 r - I
COLLECTOR CURRENT dc)-A COLLECTOR-TO-EMITTER SATURATION VOLTAGE [vCE (MtlJ—

COLLECTOR CURRENT I Ic
Fig. 20 — Typical normalized dc beta charac- Fig. 21 — Typical gain-bandwidth product for Fig. 22 — Typical saturation voltage charac-
teristics for 2N6354. 2N5038, 2N5039, 2N6496. teristics for 2N6354.
25 CASE TEMPERATURE (Tc >- 25 'C

BASE SERIES RESISTANCE ( R g )' 20 A BASE SUPPLY VOLTAGE (Vbb> ,_ 4V
INDUCTANCE <L ) 200 ?H

1
V%f T k
5
S 15 \ '*•)•.
t
l0
I f
r
, . 750
s
OhOv J
~
tr 1000
i
-4^^
X*
s
v
ft /J
/ /
,* S
. «» // /
V V //
20 40 60 80 100 120
INDUCTANCE BASE SERIES RESISTANCE (R B I —
Fig. 23 — Maximum reverse-bias, second- Fig. 24 — Maximum reverse-bias, second- Fig 25 — Maximum reverse-bias, second-
breakdown characteristics for breakdown characteristics for breakdown characteristics for
2N5038 and 2NS039. 2NS038 and 2NS039. 2N6496.
128
A
POWER TRANSISTORS
2N5038, 2N5039, 2N6354, 2N6496

=- PULSE MIRATION • »„ ^ -"- •.^: r=t 1.0 PULSE DURATION 20,
collector supply voltace iv cc i . »v =i iiii^ COLLECTOR SUPPLY VOLTAGE 1V CC ) . 30 V
* ••l
• l»j • ic 10
CASE TEaPERATURE (T C I • !5»C

:•:: lii: == ~ 2.5
'Bi Ibj '
CASE TEaPERATURE
k 10
[T c l . !S"C
I
z |~: ii-H Hi ~ii L~Ej£
£ u =;
•ii:
ts.
! »
:::: ::::
a -
Hi: iiii
iiii
V :Hi :•;:,
:..
r
nil IIP. IhI ;h;

j 01 i u
i s ;•:;-: n::
~™
r.:: iiii FiTr =£
* u
h •^
=:] :u- n^ a
'.":
1 u
i-.i.
'-.':
Hi: lii; HiT HH
:=• !!!•
« |:;i ::::
1
i= iiil _ Ii;-:
iS, ii.H ™ o.s
E = Si n= ::
~
~i HS
COLLECTOR CURRENT dc)-A MSS-3S40S2 COLLECTOR CURRENT dc>-»
Fig. 26 — Maximum reverse-bias, second- ^/fli 27— Typical rise-time and fall-time Fig. 28 — Typical storage time characteristics
breakdown characteristics for characteristics for 2NS038, 2N5039, for 2N5038, 2N5039. 2N6496.
2N6496- 2N6496.
PM.SC DURATION" ZOut PULSE OURATION'20(lt

RSPfTITIO* RATI'I >Ml REPETITKJN RATE -1 kHi
COLLECTOR SUPPLY VOLTASE Vcc ( 1 50 V COLLECTOR SUPPLY VOLTAOE VcCl'SO V1
CASE TEMPERATURE (TC I'2»'C CASE TEMPERATURE <T<-)-29'C

I«rlB 2 'Ic"0
= o.s
i
Ô,
t"
- t

i a: til ITHli H4fl"1
i .
u
8 O.S
O.I irrH 111 11 ' iflllllllll
^^g:
t 4 « t io a COLLECTOR CURRENT >— A
COLLECTOR CURRENT lie)— (I c
92C5-SOI26
2CS-20I28
Fig. 29 - Typical rise- and fall-time charac- Fig 30 — Typical storage-time characteristics
teristics for 2N6354. for 2N6354.
129
POWER TRANSISTORS
2N5050, 2N5051, 2N5052

Features:
High-Voltage Silicon N-P-N Transistors
Economy types for ac/dc circuits
Fast turn-on time at high collector current
For High-Speed Switching and Linear-Amplifier Aorjlications
The RCA-2N5050, 2N5051. and 2N5052 converters, inverters, deflection- and hi-fi
are silicon n-p-n transistors with high break- amplifiers.

down voltages and fast switching speeds. The 2N5050, 2N5051, and 2N5052 tran-
Typical applications for these transistors sistors are supplied in steel JEDEC TO-21 3MA
include high-voltage operational amplifiers, hermetic packages.
high-voltage switches, switching regulators, TERMINAL DESIGNATIONS
MAXIMUM RATINGS, Absolute-Maximum Values: (FLANGE)
2N5060 2NB061 2NB052

* V CBO 125 150 200 V
* V CEO 125 150 200 V
* V EBO V
* 'c
A
'cm A
* 'b
1 _ A
* PT JEDEC TO-21 3M
T c upto 25 C 40 — w
Tq above 25 C, derate linearly 0?6f} . _ W/°C
. -65 to 200 . °C,
8
* TC . -65 to 175 . °P.
*
Tl-
At distance ^ 1/1 6 in. (1 .58 mm) from seating
plane for 1 s max 93R °c
COClBCTOft GURROIT (Xq)— nA

all types.
Fig. 3 — Typical collector-to-emitter saturation

voltage as a function of collector
COLLECTOR-TO-EMITTER VOLTAGE (VCE»-V current.
130
A — A V
POWER TRANSISTORS
2N5050, 2N5051, 2N5052

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C COLLECTOR-TO-EMITTER VOLTASE (Met) • nV
Unless Otherwise Specified so
#> *?/
CHARACTERISTIC
TEST CONDITIONS
VOLTAGE CURRENT
2NS0S0
LIMITS
2N5051 2N5052 Units

I
81
*Sy
SI
f
/
'
Vde Adc 1-
II
VC E vB e »C Min. Max. Min. Max Min. Max.
E
—
AtT c =150°C 150 -1.5 - : 5 - mA
200 -1.5 5
62.5 — Fig. 4 — Typical input characteristics for all types.
0.1
* 75 - -
'ceo 0.1
100 0.1
*
'ebo -6 - 0.1 - 0.1 - 0.1
* V CE0 (sus)& 0.2« 125 - 150 - 200 - V

5 0.75" 25 100 25 100 25 100
* 1a
hFE 5 25 25 25
5 2a 5 5 5
* VBE 5 0.75» - 1.2 - 1.2 - 1.2
* 0.75» 0.1 - - - V
V CE (sat) 1 1 1
2a 0.4 5 5 5
'S/b 100 -
0.15 3.15 — 0:15 - mA 92CS-30560
*
COLLECTOR CURRENT (I
c )—
|h
fe | f = 5MHz 10 0.25 5 - 2 - 2 - Fig. 5— Typical rise time as a function of collector
current.
* h fe = 1kHz 10 - - -
f 0.25 25 25 25
* Cobo f=1MHz 10C - 250 - 250 - 250 pF
*
V 120<« 0.75 0.1 - 0.3 - 0.3 - 0.3
*
*f
I20d 0.75 0.1 - 3.5 - 3.5 - 3.5
A*
*
tf I20<< 0.75 0.1 - 1.2 - 1.2 - 1.2
R0JC I I I l-h.7 - | 3.7 |- |3.7 °C/W

* In accordance with JEDEC registration data. c v CB value
* Pulsed: pulse duration = 300 ms, duty factor < 2%. d v
cc value
b CAUTION: The sustaining voltage V CEO (sus) MUST NOT be measured on a curve tracer. See circuit.
Fig. 9, or equivalent, |to measure V CEO (»us).
•2C3-303M
COLLECTOR CURRENT Oj) I
Fig. 6— Typical storage time as a function of

collector current.
^^W PULSE DURATION

REPETITION RATE
llllllllll •
ZO>•
1000 PULSES
lllllllllllll
0.9 lllllllllllll
MBfm COLLECTOR SUPPLY VI IllUIW]
lUlilllU
CMC TEMPERATURE (Tc) • »S«C lllllllllllll PULSC DURATION*tO*l
lllllllllllll REPETITION RATE •1000 PULSES/«
mH.mlmfli. rC '0.7SAti( -o.iA
CASE TEMPERATURE (Te )>SS«C
| 0.6
1 0.S |||l|l||ljl|[ljv§|
0.4
b ft4 se a. i.« 2
COLLECTOR CURRENT O^)— 92CS-»9»I COLLECTOR SUPPLY V0LTA4E (Vec> —V 92CS-J0SJ4
7 — Typical
Fig. 8- Typical rise, fall, and storage time as a
Fig. fall time as a function of collector
function of collector supply voltage.
131
POWER TRANSISTORS
2N5239, 2N5240
High-Voltage Silicon N-P-N Transistors Features:
m High voltage ratings: Vqer(sus)
For High-Speed Switching and Linear- = 350 V, RflE < 50 Q (2N5240)
Amplifier Applications in Industrial and = 250 V, RBE < 50 Q (2N5239)
Commercial Service High power dissipation rating:
PT = 100 W at Vce = 150 V,
Tc = 25 °C
The RCA-2N5239 and 2N5240" are amplifiers, deflection cir-
inverters,
For switching applications where
multiple epitaxial silicon n-p-n power cuits, switching regulators, and high-
circuit values and operating condi-
transistors employing a new overlay voltage bridge amplifiers.
tions require a transistor with a
construction with several emitter These types differ in breakdown high second breakdown rating (ls/b)
sites. voltage and leakage current values. (limit line begins at 150 V)
The high breakdown voltage ratings The 2N5239 and 2N5240 are supplied
Exceptional second-breakdown:
and exceptional second-breakdown in steel JEDEC TO-204MA hermetic
capabilities of these
transistors packages. 0.67AatVcE = 150 v
make them especially suitable for *RCA Dev. Nos. TA2765 and TA2765A, respec- Maximum areaofoperation curves
use in series regulators, power tively. for dc and pulse operation
2N5239 2N5240
*
VcBO 300 375 V
VcER(sus)
RBE < 50Q 250 350 V
*
VcEO(sus) 225 300 V
*
VEBO 6 V
*
»C 5 A JEDEC TO-204MA
*IB 2 A
*PT NOTE: CURRENT DERATING AT CONSTANT VOLTAGE APPLIES
ONLY TO THE DISSIPATION-LIMITED PORTION AND Is/b
Tc<25 CandVcE<150V
,,
100 w LIMITED PORTION OF MAXIMUM-OPERATING-AREA CURVES.
DO NOT DERATE THE SPECIFIED VALUE FOR I C MAX
Tc <25°C and Vce > 150 V See Fig. 1

Tc >25°C and Vce > 150 V - SeeFig.1and2 _
*T s tg,Tj _ -65 to 100 _
T|_
At distance > 1/32 in. (0.8 mm) from seat-
ing plane for 10 s max 230
'In accordance with JEDEC registration data
CASE TEMPERATURE <T C !
Fig. 1 -Derating curves for both types.
IOO
COLLECTOR-TO-EMITTER VOLTAGE (V^l- 10V
* , 1 S 40
i
' 30 ,11 <>•

2 c
CASE-TEMPERATURE <£>rr
CHANGE (4T C )'50»C Z
X
X- 20 »
<?
n S?*£
o
* v
o I
3 \ | 10
\I2S •c\io )*C S'C
s|
10 f K 1
1
01 J K>
EXTERNAL BASE-TO-EMITTER RESISTANCE (Rg E l— COLLECTOR CURRCNT«c)—
92LS-IM6KI UlllHI
Fig. 2 -Thermal-cycling rating chart for both
types.
Fig. 3 -Sustaining voltages as a function of Fig. 4 - Typical dc beta characteristics for both
base-to-emitter resistance for both types.
types.
132
POWER TRANSISTORS
2N5239, 2N5240
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C unless
otherwise specified
CHARACTERISTIC VOLTAGE CURRENT 2N5239 2N5240 UNITS
Vdc Adc
VCE VBE ic IB Min. Max. Min. Max.
ICEO 200 — 5 — 2
ICEV 300 -1.5 4 —

375 -1.5 2
mA
(T C= 150°C) 300 -1.5 — 5 — 3
lEBO (VEB = 5 V) 5 — 1
(V E B = 6 V) — 20 20
vebo 0.02 6 — 6 —
VCEO(sus)a 0.2b 225 — 300 — V
VCER(sus)a 0.2b 250 — 350 —
(RBE < 50 Q)
hFE 10 0.4b 20 80 20 80
10 2b 20 80 20 80
10 4.5b 5 5
VBE 10 2b — 3 — 3
VcE(sat) 2b 0.25 — 2.5 — 2.5 V
4.5b 1.125 5 5
IS/b (t = 1 s) 150 0.67 — 0.67 — A

Es/b (RBE = 50 Q, -
L = 0.2 mH, 4 1.6 — 1.6 mJ
Veb = 4 V)
|hfe| (f = 1 MHz) M) 0.2 2 — 2 —
hfe (f = 1 kHz) 10 4 20 — 20 —
fT 10 0.2 2 — 2 — MHz
Cobo (f = 1 MHz) 10
c — 150 — 150 PF
RflJC
— 1.75 — 1.75 °C/W
a CAUTION: The sustaining voltages VcEO< stJS and Vcer(s us must not be measured on a curve
) )
tracer. These sustaining voltages should be measured by means of the test circuit shown in Fig.14
b Pulsed; pulse duration < 350 ^s, duty factor < 2%.
c
Vcb value
COLLECTOR-TO-EMTTER VOLTAOE (V^l-lOV

||||||||||||||||tfti
T *
P-SfflailmlP ffl
iDttimtiiim^'MiiiiiiiiiiiiiiiiiHii
2
^^[Mm
îifttttitttn
WW
i
i
BASE-TO-EMITTER VOLTAGE (VBE )-V coLLECTOR-To-eiarm voltme (vî-
Fig. 5 - Typical transfer characteristics for both Fig. 6 - Typical output characteristics for both Fig. 7 - Typical reverse-bias, second-breakdown
types. types. characteristic for both types.
.133
POWER TRANSISTORS
2N5239, 2N5240
CASE SUPPLY VOLTAGE (Vga) " -4 V tttiitttttttittttttttttt :
INDUCTANCE (L) 500 ,H 1

|
1 1 1 |
1 1 1 1 1 1 1 1 1 1 1 1 1 1 -
CASE TEMPERATURE [T C > ;s* c |
1 I r
'
1 1 1 II irr-•rrf l-^t^P^^Wtt^rrF
BASE SERIES RESISTANCE |R a ) -
Fig. 9 -Typical reverse-bias, second-breakdown

characteristic for both types.
CASE TEMPERATURE T c . 25' C ( |
INDUCTANCE (LI > 500 »H

BASE SERIES RESISTANCE (Rg)-IOO|
100 IOO0
COLLECTOR-TO- EMITTER VOLTAGE (VcE>— V
92LS-IS590I
Fig. 8 Maximum operating areas

- for both
types.
BASE SUPPLY V0LTA6E (Vg B )—V
Fig. 10 -Typical reverse-bias, second-break-

down characteristic for both types.
CCLLECTOR-TC-EMITTER VOLTMC («&>•»

CAt*TCMPEJUTUR€<Tc)>ZS*C REPETITION RATE •MO PULtE**
COLLECTOR OUPPVY vOLTMt (*C>"» V
CA*E TCHPCrMTURCIIcl'tfT^
'
IT YRI
i
J_
7
i
s
r
/
1 <x«
J • ityrT
* 4 8 r f
1 0±
,
1
9
* * it \
COLLECTOR CURRENT —A
COUXCTOR CURRENT Uc)-A
collector umit (ic»-A mi »»»
,„.„,„„
Fig. 12 - Typical saturated-switching time (stor- Fig. 13 - Typical saturated-time (turn-on or fall)
Fig. 1 1 - Typical gain-bandwidth product as a age) as a function of collector current as a function of collector current for
function of collector current for both for both types. both types.
types.
134.
V V -
POWER TRANSISTORS
2N5293-2N5298, RCA3054
Hometaxial-Base, Silicon N-P-N VERSAWATT Transistors
Features:
General-Purpose Types for Medium-Power Switching and Amplifier
Low saturation voltage—
Applications in Military, Industrial, and Commercial Equipment VcE(sat) = 1 V max. at \q = 0.5 A
(2N5293, 2N5294)
= 1 V max. at lc = 1 A
RCA-2N5293, 2N5294, 2N5295, 2N5296, into TO-66 sockets. Types 2N5294,
(2N5295, 2N5296)
2N5297, 2N5298, and RCA3054 are 2N5296, and 2IM5298 are electrically
hometaxial-base silicon n-p-n transistors. identical to the 2N5293, 2N5295, and

1 Vmax. atlc = 1.5
= A
(2N5297, 2N5298)
They are intended for a wide variety 2N5297, respectively, but have straight
VERSAWATT package ( molded
of medium-power switching and amplifier leads. The RCA3054 is supplied with
silicone plastic)
applications such as series and shunt straight leads.
Maximum safe-area-of-operation
regulators, and in driver and output stages
of high-fidelity amplifiers. Types 2IM5293, These plastic power transistors differ in
2N5295, and 2N5297 have formed voltage ratings and in the currents at
emitter and base leads for easy insertion which the parameters are controlled.
MAXIMUM RATINGS, Abtoluf-Mtximum Vslun: 2NS293 2N6295 2N5297

2N52M 2NS296 2N5298 RCA30S4
COLLECTOR-TO-BASE VOLTAGE V CB o
With -1 .8 volti (Vbe> of revtrw biaa Vcev<"»>
r^
yo
With axtarnal baaa-to-amlttar ratlttanca (Rbe " 10017.
1 .
v c er(>uiI
With b*w opan Vceo ,,u> '
EMITTER-TO-BASE VOLTAGE V E 80
COLLECTOR CURRENT I
c
BASE CURRENT I
B 92CS-27SZ0
At cm tamparaturat up to 25°C
BOTTOM VIEW
w/ c JEDEC TO-220AA
At cm tamparaturat abova 2B°C Oarate linaarly at 0.288
2NS2S3, 2NB2SB, 2NB2B7
At ambiant lamparaturai up to 26°C w
At ambiant tamparaturat abova 25°C Jarata linaarly ai 0.0144 w/°c
TEMPERATURE RANGE:
Storage and Operating (Junctlonl
LEAD TEMPERATURE (During aoldarlng):
Atdiitenee>1/8ln. (3.17mml from can (or 10 1 max. .
BOTTOM VIEW
JEDEC TO-220AB
2N6294, 2N62S6, 2N6298, RCA30B4

MCS-lTloORI COLLKTOR-70-tUmW VOLTaSE lV C e>—
Fig. 1 - Maximum operating areas for 2NS293-2NS298. Fig. 2 - Maximum operating areas for RCA3054.
135
5
POWER TRANSISTORS
2N5293-2N5298, RCA3054
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C, unless otherwise specified.

CHARACTERISTIC VOLTAGE CURRENT 2N5293 2N5295 2N5297
SYMBOL Vdc Adc 2N5294 2N5296 2N5298 RCA3054 UNITS
V C E VBE •c >B MIN. MAX. MIN. MAX MIN. MAX MIN. MAX.
90 -1.5 1
65 -1.5 - 0.5 - - 0.5 -

ICEV*
35 -1.5 2
mA
90 -1.5 6
-
'CEV 65 -1.5 - 3 - - 3 -
(T C = 150°C>
35 -1.5 5
50 ~ 0.5 0.5
'CER
(R BE = 100 i2) 20 - : - : _ mA
'CER - 2 - - - 2 - - mA
50
(T C = 150°C)
-7 1 1
-5 - - 1 - 1 - mA
'EBO
-4
4 0.5 30 120 25 100

h FE c 4 1 30 120
4 1.5 20 80
0.1 70 55
V CE0 (sus) c 0.1 - 40 - - - V
0.1 60
0.1 75
V CER (sus) c 0.1 - 50 - - - V
(R BE = 100 £2) 0.1 70 60
-1.5 0.1 80
Vq E \/(sus) c -1.5 0.1 - 60 - - - V
-1.5 0.1 80 90
4 0.5 1.1 1.7
v B ec 4 1 - - 1.3 - - V
4 1.5 1.5
0.5 0.05 1 1
1 0.05 - -
V CE (sat) c 1 0.1 1
- - V
1.5 0.15 1
4 0.2 0.8 - 0.8 - 0.8 - 0.8 - MHz

*T
0.5 0.05 a 5
v cc 1 0.1 a - - 5 - - - /is
*ON
= 30 1.5 0.1 a 5
0.5 -0.5 a 15
-0.1 b - - 15 - - - Ms
tOFF vcc 1
= 30 1.5 -0.15 b 15
r 0jc - 3.5 - 3.5 - 3.5 - 3.5 °C/W
R 0JA - 70 - 70 - 70 - 70 °C/W
a D \gj value (turn-off base current). c Pulsed, pulse duration = 300

\q. value (turn-on base current). /is,
• for RCA3054. duty factor = .018.

l
CEX
136
=
POWER TRANSISTORS
2N5293-2N5298, RCA3054
CASE TEHKRATIME ITc) 2S*C ,
100
*
•
H
1 III 1 II is S
i n iiiip iii: =i
« 1 II 1 1
J.
l»w * *>"> vceo
,.<
Vera
200
~-i~- ;7g g
z
<
2
^ 5»
'
'pi? l r:ir
S
a
veto
S 10-
5
i
J ^
x\v Iff
VCSR 0NJH5 • *S2H

3 ISO
_."Vi\
:;$
Ft*
-i
aS
m
, :
::u "r rrt
fiif
z
<
k V V ^\
\\
m-
SB
s»«
8 «o
^ »ceo
3
so
HI
-
:
;:;;
!i^*
(i? 5E -!H
:i::
' 10>
s# tS 20
10,000
I0< 1.0 IS 2.5 1.0
NUMBER OP THERMAL CYCLES EXTERNAL MSE-TO.EMTTER RESISTANCE IRHI -

92CS- 20101
BASETO-EKITTER VOLTAGE (V M > - V
^^
Fig. 3 — Thermal-cycling rating chart for Fig. 4 — Sustaining voltage vs. base-to-emitter Fig. 5— Typical input characteristics for
all types. resistance for 2NS293-2N5298. 2NS293, 2N5294, and RCA3054.
—
:::
h4~
~-
1
200
:::: SI
... •in
i in ri'SJ-rrr
:H: i;n ;3
:_: rii
P
~.\ ™J Hi
3
:'iH s
p1 l.S 2.0
BASE-TO-EMTTEE VOLTAGE |V U )
-
EASE-TO-EIIITTER VOLTAGE |V M ) .V
Fig. 6— Typical input characteristics for Fig. 7 — Typical input characteristics for
2N5295 and 2N5296. types 2N5297 and 2N5298.
base toehitter voltage (»h) - BASE-TO-EMITTER VOLTASE (V(D - V

^^
f/fli. S— Typical transfer characteristics for Fig. 9— Typical transfer characteristics for
2N5293. 2N5294, and RCA3054. 2N5295 and 2N5296.
COLLECTOR TOE.1TTER VOLTAGE (VCT ) • 1 V

COLLECTOR-TO-CUTTER VOLTAGE (Vce) ' 4V
in
I
1" / ^V
I
I* y
V \
t
I"
T _«- .-1
4/ s
f 19>
>
/ '
Y
1 * > '*
•
f \ <!
\
I I*
4 rf !j
T ^ >
8
t
\ V
,_1
1
0.5 1.0 tm •oi 'l.O \
EASE -ro-EUTTEIt VOLTAGE (V K )

- COLLECTOR CURRENT (10 . A
„ COLLECTOR CURRENT <!<;)- A a
Fig. 10 — Typical transfer characteristics for Fig. 1 1 - Typical dc beta for 2N5293, Fig. 12 - Typical dc beta for 2N5295,
2N5297 and 2N5298. 2N5294, and RCA 3054. and 2N5296.
137
:
POWER TRANSISTORS
2N5293-2N5298, RCA3054
V
coUICTM Tt Unil VtlMM
no
100
'" — » '-.. 1 COLLECTOH TO-UITTOI c6u.iet6lit6-E.itlH V8LTOi(V c(l
CAJI TMMIM1VM (to 19> C
.4v
UK TMWMTUM (Tc) • >S> C
IV c ,i . 4
1 .
4/
> / "«
v
1.4
!- '
4
jl, i .,
1
n
'
J t §
"
i 4 ^
t 01
3 40
2\
y\ \ '* \
\ §
s ^ L_ **
* a o.4
\
0.4
A
D U •
0.4
1 1
I i 1 1 (
Ml
COLLICTOB CUMMNT (It;) - *A COLLICTOR CUMCNT (It;} . mA
COLLECTO* CUIWIKT «£) - »
m>
Fig. 13-Typical dc beta for 2N5297 and Fig. 74-Typicat gain-bandwidth product for Fig. 15-Typicat gain-bandwidth product for
2N5298. 2N5293, 2N5294,and RCA30S4. 2N5295and 2N5296.
1.0 COLLECTOHTO-EWTTEE VOLTAOE IVril < V

CASf TMNMTUM ITc) • 2S» C CASE TE*Pf ftATUM ITc) < IP c
!.«
:IM
J!
i
*12?
100
' 2.0
S
I
to
1 "
;4o
5 '••
t
a
0.4
o.s l
0.4
10
0.2
SB
collectoh cumekt del - -a 0.4 0.1
COLLECTMTO-EMTTE » VOLT AM (Ve,) . COLLECTOETOEalTTE* VOLTACE (Vce )
Fig. 16-Typical gain-bandwidth product for Fig. 17-Typical output characteristics for Fig. 18-Tvoical outout characteristics for
2N5297 and 2N5298. 2N5293, 2NS294, and RCA3054. 2N5295 and 2N5296.
CASE TEaND ATUHS (T c I-2S«C|S=
<
4.0
1
5
=J0O =
5 1.0
= 100 = Si 3
g 2.0 -g tor
=
° 1.0
sr
S
10
1ASI CU»i ENT{I|)-

I
COLLECTO*.TO.E«ITTE« VOLTAOS (Vce) - V

„„.„„ COLLECTOKTO-ErUTTEII VOLTAGE <V
C E> - «
Fig. 19— Typical output characteristics for Fig. 20- Typical output characteristics for Fig. 21- Typical saturated switching charac-
2N5295 and 2N529& 2N5297 and 2NS298. teristics for 2NS29S, 2N5296,
and RCA3054.
138
A
POWER TRANSISTORS
2N5301, 2N5302, 2N5303

Features:
High-Current High-Power
Specification for hpg and Vcg(sat) up to 30A
High-Speed N-P-N Power Transistors Current gain-bandwidth product fj = 2 MHz
min. at 1A
The RCA-2N5301, 2N5302 and 2N5303 are converters, inverters, and solenoid (hammer) Low saturation voltage with high beta
epitaxial-base silicon n-p-n transistors in- /relay drivers. High dissipation capability
tended for a wide variety of high-power, These devices differ in maximum voltage
high-current applications, such as power- ratings and Vcrf(sat), V[j{:(sat), and Vgj:
switching circuits, driver and output stages characteristics. All are supplied in JEDEC
for series and shunt regulstors, dc-to-dc TO-204MA hermetic steel packages.
2N5301 2N5302 2N5303
V C BO 40 60 80 V
V CE0 (sus) 40 60 80 V
V EBO — 5 — V
c — 30 — A
'cm
— 50 — A
— 7.5 — A
>B
'bm
— 15 — A
pT
AtT c <25C 200 W
AtT c >?5°C Derate linearly 1.15 W/°C JEDEC TO-204MA
See Fig. 1 and 2
T s«g. T J 65 to 200 —
TL
At distance > 1/32 in. (0.8 mm) from seating plane
for 10 s max
* In accordance with JEDEC registration data format JS-6 RDF-2.
50 75 I50 ITS 200

CASE TEMPERATURE (Tc >-
Fig. 2- Derating curves for 2NS301. 2NS302,

and2N5303.
i«00
8
„ 6
I
i ^
"^fe
s CASE TEMPERA
TU IE
K I00 <JC ). !S%-
W 8
SQ 6
z z
=5 10
o 8
S 6
I
s -
fi
.
° I
60 "" 100 COLLECTOR CURRENT —V
92CS-29797 Fig. 3 — Typical dc beta characteristics as a
- Maximum operating areas function of collector current for
Fig. 1 for 2N5301, 2N5302, and 2N5303.
2NS301. 2N5302, and 2NS303.
139
POWER TRANSISTORS
2N5301, 2N5302, 2N5303

ELECTRICAL CHARACTERISTICS* at Case Temperature (Tq)= 25° C unless otherwise specified

CHARAC- VOLTAGE CURRENT
TERISTIC Vdc Adc 2N5301 2N5302 2N5303 UNITS
VC E V B E •c >B Min. Max. Min. Max. Min. Max.
40" - 1 - - - -
'CBO 60" 1
80* : _ : : 1
40 -1.5 - 1 - - - -
'CEX 60 -1.5 - - - 1 - -
80 -1.5 - - - - - 1
'CEX 40 -1.5 - 10 - - .
- - mA
TC = 60 -1.5 - - - 10 - -
150°C 80 -1.5 - - - - - 10
40 - 5 - - - -
'ceo 60 _ 5 _
80 _ _ 5
'ebo -5 - 5 - 5 - 5
2 lb 40 - 40 - 40 —
2 10b - - - 15 60
3 15b 15 60 15 60
"FE
2 20 b 5 -
3 30 b 5 5
V CE0 (sus) 0.2 40 - 60 - 80 -
2 10 b _ - _ — _ 1.5
2 15b 1.7 1.7
VB E - - -
4 20 b 2.5
4 30 b 3 3
10 b 1
- 1.7 - 1.7 _ 1.7
15b 1.5 - 1.8 — 1.8 — 2
V BE (sat) V
20 b 2 2.5 2.5
20 b 4 - - - - - 2.5
10 b 1 - 0.75 - 0.75 - 1
15b 1.5 - - - - - 1.5

V CE (sat) 20 b 2 - 2 - 2 - -
20 b 4 2
30 b 6 - 3 - 3 -
's/b
tp= 1 s 20 10 _ 10 _ 10 _ A
nonrep.
E S/b
L=125/iH,
R BE = 51fi -1.5 10 - 6.25 - 6.25 - 6.25 - mJ
Ihfel
10 1 - 2 - 2 - 2 -
f=1MHz
h fe
10 1 - 40 - 40 - 40 -
f=1kHz
t
r
(SeeFig.8) ,
vcc = 10 1 - 1
- 1
- 1
*$ 30 10 1
c - 2 - 2 - 2 Ms
tf 10 1
c - 1
- 1 - 1
R 0JC 20 5 - - 0.875 - 0.875 - 0.875 °c/w
* In accordance with JEDEC registration data format JS-6 RDF-1 . " Vq B b Pulsed; pulse duration = 300ms,
c | _ _• duty factor = 1 .8%
Bi Bo
140.
POWER TRANSISTORS
2N5301, 2N5302, 2N5303

|lC<
,
lB ,| 0)t}ftffl||l||||||||||l|]|l||l|||||||||||llllllllllllllllTO COLLECTOR-TO-EMITTER VOLTAGE f ^cg >-^V ffft| C0LLECT0R SUPPLY VOLTAGE (Vccl-30V
[ || ||| j|| [|[] 8 t
,o 30 IC/lB'IO
[ttttti i iiii iiiiiiiiiiiiiiiiii iiiiiiiiiiiiiHiiiiiiiiiiyymiiiiifffl 6
1 "1 II IIIIIIIIIIIIIIUIIIIllllLo^ni < 25 ffj «.
l
z \\\§\\\\\\\\\\\\W*flF& tIHI llllttJJunPîMfir
r
H lllilllllllllllllllllll'-? &)?_*&
111
I 2
K 2°
g lll
lllllllllllllllllffl
ffttiiPjjjfjWB
If
i
)
K
Mr* Jllllll ilill % 6
"IBJi w \\h\ 1 •d
§
o i iiiifffffn 1 1 1 11 1
1 |
|||||||||||H|||/3||||||||||||||
5 5
Rffilnl)lllllllll llllllllllllllllll
0.0I
6 8 ,q
2 4 6 8
COLLECTOR-TO-EMITTER SATURATION VOLTASE [VceIwO] —V BASE-TO-EMITTER VOLTASE (VbeI— V COLLECTOR CURRENT U C >—
Fig. 4 — Typical saturation voltage characteristics Fig. 5- Typical transfer characreristics for f/g. 6 — Typical delay-time and rise-time charac-
for 2NS301, 2N5302, and 2N5303. 2N5301, 2NS302, and 2NS303. teristics as a function of collector current
for 2NS301, 2NS302, and 2NS303.
.COLLECTOR SUPPLY VOLTAGE (Vccl"»V

IB|— iBj
X 6 IC/lB'IO
CASE TEMPERATURE (TC )>25'C
i 2
Ml
^tt
8 "
,
£
I *
< 2
0.1
2 B » 2 6 8
10
COLLECTOR CURRENT dc)—
Fig. 7 — Typical storage-time and fall-time charac-

teristics as a function of collector current
for 2NS301. 2NS302, and 2N5303.
141
POWER TRANSISTORS
2N5320-2N5323
Features:
Complementary N-P-N & P-N-P Silicon 2N5322

2N5323
? P-N-P
Complements of
f
2N5 32
2N5321
Power Transistors ] [
:
Maximum safe area-of-operation curves

Planar construction for low-noise and
General-Purpose Types for Small-Signal, Medium-Power Applications
low-leakage characteristics
RCA-2N5320, 2N5321, 2N5322 and 2N5323 are double- versions of the 2N4036 with all of its additional outstanding Low saturation voltage
diffused epitaxial-planar silicon
power transistors intended for High beta at high collector current
features. (Technical data on the 2N2I02 and 2N4036 are
small-signal medium-power applications. The 2N5320 and
shown on pages 29 and 71, respectively).
2N5321 n-p-n types are actually high-current, high-dissipation
The devices are supplied in the JEDEC TO-39 hermetic TERMINAL DESIGNATIONS
2N2102 with all of the salinet features of that
versions of the
package.
device. The 2N5322 and 2N5323, p-n-p complements of the
2N5320 and 2N5321, are actually high-current, high-power
MAXIMUM RATINGS, Absolute-Maximum Values: 2N5321 2N5323 2N5320 2N5322

• COLLECTOR TO-BASE VOLTAGE V C 80 75 75 100 100
COLLECTOR TO EMITTER SUSTAINING VOLTAGE: 92CS-275I2
With 1.5 volts IVbe) of reverse bias
VcEV' sus )
JEDEC TO-39
With external base to emitter resistance
(R B E>=100tt VcER(sus) 65 90 90 C0LLECTOR-TO. EMITTER VOLTAGE (V ce ) - 4V
With base open 50
VcEO< s "sl 75 -75
• EMITTER TO BASE VOLTAGE V E BO 5 7 7
• COLLECTOR CURRENT I
c P 140
BASE CURRENT
•
. TRANSISTOR DISSIPATION:
|
PT
B
£ m * \
V
At case temperatures up to 25° C

Figs. 2 & 5 --''H7
At case temperatures above 25° C Derate linearly ai 0.057 W/OC x'
- ^s
M *r1 r"
Us
ll
• TEMPERATURE RANGE: 1 ,*
x
Storage and operating Uunction) «
5 60
'_
.,u§ \
»» *->^
. LEAD TEMPERATURE (During soldering): " \
i
At distance_> 1/32 in. (0.8 mm) from
\
seating plane for 10 s max ,
.
i * ,
• In accordance with JEDEC registration data format (JS-6-RDF-1) „
COLLECTO* CtMIKHT (l c >-

Fig. 1 - Typical static beta characteristics
for types 2N5320 and 2N5321.
COLLECTOtTOEUTTEII VOLTAGE <V n |- -<V

1
120
-' "V
ii = "
4it
::::
10 =
iiliate i i+ttti S 1 N
8h 8ttliftttlM fff \
ff 10 Mil »"C
6; " "-.
W- igll ill 1 SI M= ilp! HiiiHiil; Z to
S \
4 : =111111 I
< = :r ^
i
40
\
4^!^Jj;
i'Ws =T=
* 20
\V
X
* 2- EfrPjff EffiBfti
z fm T Bllllllp
CUMENT
1
mm
COLLECTO* (lc>-
92CS-ISO04RI
HI 1
or
"
:f Iff '"Tr' 171
F/'gr. 3 - Typical static beta characteristics
or 1 t ttt T III + for 2N5322 and 2N5223.
1441+
o
or 8i
o C0LLECT0RT0EMTTER VOLTAGE <V ci ) . IV ' ' 1
| '
1 1 1 1 1 1 j 1 i i 1 i 1
UJ
j
4
cJ
o
:
t
M.
l1
HH ; j| HH1II1 HlHilrffl
Iff
1 1
lfl»! T.~ ~ HH S? F%:^

| 600
2 ffffj^---"t : ~ ft
ir j-l"-
T TyTi TTTTj
-Ihi flf
T 3 sGfffif ]M:::::::t <*
T' rirrr
2
Mli ni± 1
4
111 inn
6
T 1
8
1 1
2
"Til
r'TT
"
4
lllll
6
fill
8
1, „. , |
2
200
VmI
9:
|0 |00
COLLECTOR-TO-EMITTER VOLTAGE (VCE)—
BASE-T0.EHITTER VOLTAGE <V M -V)
R2CS-ISOOSRI
»2CS-t75«*e
Fig. 4 - Typical transfer characteristics
Fig. 2 Maximum
- operating areas for 2NS320 and 2N5321. for 2N5320 and 2N5321.
142
POWER TRANSISTORS
2N5320-2N5323
ILICTHCAL CNARACTIRISTICI, Can T«Mtfth r« (TC) - 25° C Unload OmerwJio Saec<f7e«
DC DC
CHARACTERISTIC Type Type Type Type
Symbol Voltage Current Units
V mA 2N5320 2N5321 2N5322 2N5323
VCB VCE Vbe IC IB Mm. Max Mm. Max. Min. Max. Mm. Max.
BO 0.5
60 -
Collector-Cutoff Current: ICBO «iA
With base open (Ig
•80 0.5
0)
100 •1.5 0.1

With base-emitter
75 •1.5 o'l
Junction reverse biased -100 •0.1 mA
1.5
-75 -01
!
C£X LA
T C M50°C -1.5
5
70
45 -1.5
•5 inA
70 1.5
.5
-45 1.5
-7 n.i
:
-5 0.1
7 -0.1 mA
5 -0.1
lEBO
-5 0!
-4 0j 0.5
„A
5
0' •01
4 5
Collectw-to-Emittei
Breakdown Voltage
<ibr;cev
Witt) base-emitter junction •1.5 01 100 75
V
. ieveise biascc 1.5 01 •100 /'5
Colleclor-to-Emitter
Sustaining Voltage:
With external base-to

emitter resistance VcER'Sus." 100 90 65 V
'RBE'-lOOfi •100 90 •65
With base open '" 100 75 50 V

VCEO'S" 5
100 •5U
Collectorto Emitter 500 50 05 0.8

V
VcE'Sat.
Saturation Voltage •500 50 •0.7 1.2
4 500 i.i 1.4

Baseto-Eaitter Voltage VBE V
-4 •500 •1.1 •1.4
4 500 30 130 40 250

DC Forward Current -4 500 30 130 40 250
Transfer Ratio 2 1000 10
Set NOTE -2 •1000
4 50 50 50
Gain-Bandwidth Product <T
MHZ
•4 •50 _5P_
Magnitude of common-emitter,
-
small-signal, short circuit, 4 50 5 5
forward current transfer ratio

><e| •4 -50 - - 5
-
(1-10 MHZ)
Second Breakdown Collector

50 200 200
Current* ( mA
S/b •35 285 285
(With base forward biased)
Sat. Switching Time:

30 500 50 80 80 rts
ton .
Turn-on Time 30 -500 •50 100 i 100
Turn-off Time 30 500 50 800 800 ns

toff
•30 -500 •50 : 1000 1000
Thermal Resistance:
junction-to-Case
R 0JC . 17.5 .
17.5 17.5 .
17.5 "CM
Junction-to-Ambient nejA - 150 150 150 150 "C/l
* In accordance with JEDEC registration data format (JS-6-RDF-1)

* For p-n-p davicet, voltaga and currant value* are negative.
c
CAUTION: The sustaining voltages VcEOO"*) and Vcer(«u«) Pulsed; 0.4i non-repetitive pulse.
*
MOST NOT bt measured on a curve tracer. * l$ b l% w^t n n, cment.et which second breakdown occurs at
Pulsed; pulse duration • 300 h*. duty rector < 0.02. junction forward! biased for transistor operation in the active refion.
143
POWER TRANSISTORS
2N5320-2N5323
COLLKTM ||||l|||||
1 -MO
s
m
IP
i-
'- w
.0 -T -1 - i'i"""""
MSI.T»nuTTR WtT«£ (VW ). V

MCS-iSOOSftl

for 2NS322 and 2NS323.
I -10 -K>0 MSC.TO-MITTM VOLTMC (V M).

COLLECTOR-TO- EMITTER VOLTAGE ncs-isooom
(VCE ) V
Fig. 7 — Typical input characterisitcs for
92CS-I7947
2N5322 and 2N5323.
Fig. 5 - Maximum operating areas for 2NS322 and 2N5323.
C«g TEMPERATURE <TC I H *C S
7
°j
i °«|
§
in 1 1
m
Iftttllllllllllllll llllllllll
IIIIIJfflJtitiitnlTTlrm
llliflllllllffnnfnM
[^(ji'iO^
1
1 gjff
li
4 S
li^^Hl
u ° a iiMJlliiiilllilllilllllJi
MStCMRI tMT <I t l-i»A
111111 ™i """"
—
1
4"""""l" J 7 COU.ICT<M-TO-UaTTEft VCLTMC IVfcfl

BASETO-EMfTTER VOLTAGE (V BE ). COLLECTOft-TO-CMITTCR V0LTA0I IV CC )—
92CS-ISOOIBI wea-iMorw
MCS-IMOtftl
Fig. 8 — Typical input characteristics Fig. 9— Typical output characteristics Fig. 10— Typical output characteristics
for 2N5320 and 2N5321. for 2NS320 and 2N5321. for 2N5322 and 2N5323.
144
.POWER TRANSISTORS
2N5415, 2N5416, RCS880-RCS882

Features:
Silicon P-N-P High-Voltage Transistors
2N5415: p-n-p complement of
For High-Speed Switching and Linear-Amplifier 2N3440
Applications in Military, Industrial and Commercial Equipment 2N541 5: p-n-p complement of
2N3439
The RCA-2N5415, 2N5416and RCS880, These transistors differ primarily in their
curves
RCS881, and RCS882 are silicon p-n-p voltage ratings. Typical applications in-
breakdown voltages,
transistors with high clude high-voltage differential and opera-
VcBO "350 V max. (2N5416)
=
high frequency response, and fast switch- tional amplifiers; high-voltage inverters;
and
VcEO(sus) = -300 V max. (2N5416,
ing speeds. All of these types are supplied high-voltage, low-current switching
RCS882)
in the JEDEC TO-39 hermetic package. and series regulators.
-250 V max. (RCS881)
-200 V max. (2N5415)
MAXIMUM RATINGS, Absoluts-Maximum Values: 2NS415 2N5416 RCS880 RCS881 RCS882
-150 V max. (RCS880)
'COLLECTOR-TO-BASE VOLTAGE V CB0
With axtamal baaa-to-amlttar refinance (Rbe> " 50 Ji . .
VcerI"") -360 -360
* With bate own V ceo (iui) -300 -300
•EMITTER-TO-BASE VOLTAGE V E80 TERMINAL DESIGNATIONS
•COLLECTOR CURRENT I
c
•BASE CURRENT I
B
At om temperatures up to 2S°C
At caw temperetures abova 25°C - Darata linaarly to 200°C -
At ambient temperatures up to 50°C 1 0.75 0.76

At ambiant temparaturat abova 50°C . Darate linaarly at
92CS-275I2
Storaga and Oparatlng (Junctionl 65 to +200 JEDEC TO-39
At diitanca > 1/32 In. (0.8 mm) from Mating plana for
10 i max
•2N-Sarlai types In accordanca with JEOEC ragiitration data format (JS-9 RDF*)
COLLECTOR-TO-EMITTER VOLTAGE IVce) *'0 V
2 SO 4 \
I n \
|
£- *
**a \
-C*f*
t* IP ,vr c
£ »
e
1
1
^N \ L
' '-\«
COLLECTOR CURREHT «c) — nA
Fig. 2-Typical dc beta characteristics for all
types.
COLLECTOR T0-EWTTER VOLTAGE (V ov £-~ :':.-:-

ce
; 1:1:!:;; (-=- =ijn# H= :::: :::r
- t ':':*.
:r_- *=
«.
*|=
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;"n
:~i:
N -h
u-^: =1 ;[-: :iH
| -60
-.: H
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s :-: :::-
El
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=rJ
~£ I-
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:.— :.--: Qfc =:
•F
Sk F= '^
"F t* w -08
ir^
r=
-10
:
i1-"
a^;
Till
COLLECTOR-TO-EMITTER VOLTAGE (VCE )-V -0.2 -0.4 -0.6
92CS-I7668RI BASE-TO-EMITTER VOLTAGE <V BE ) - V
Fig. t—Maximum safe operating areas for 2N5415 and 2N5416. Fig. 3- Typical transfer characteristics for aft
types.
145
POWER TRANSISTORS
2N5415, 2N5416, RCS880-RCS882

ELECTRICAL CHARACTERISTICS, Case Temperature (Tq) -2S»C
f EST CONDITIONS \ LIMITS

CHARACTERISTIC VOLTAGE CURRENT \
SYMBOL Vdc mAdc 2N5415 2NE>4t6- RC 5880 RCS881 RCS882 UNITS
V CB VCE V BE »C "B MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
-250
>CEO -160 - JUA
-100
-280
'CBO : (JA
-176 -50 -50
-300 1.6
•CEV -200 1.5 - -50 - - - -50 - jUA

.
-160 1.5 -100
>EBO 6 flA
4 -20 -30 -20
-10 -60b 30 120 20 150 — -
"FE -10 -60b 30 160
-10 -36b 20 20
Vceo'*" 1' -50 -200« - -300« - -150* - _250» _ -3008 _ V

V CER (iui)
-50 - V
<R BE )-60fi
V BE (sat) -10 -60b - -1.5 - -1.5 - -2.5 - -1.5 - -1.5 V
V CE (set) -50b -5 - -2.5 - -2 - -3.5 -3 - -3 V
h f..
-10 -5 25 - 25
(at 1 kHz)
lhf.1
-10 -10 3 - 3 - 3 - 3 - 3 -
(at 5 MHz)
Ra(h )e )
-10 -6 - 300 - 300 - - - 300 - 300 a
(at 1 MHz)
Cib
5 - 76 - 75 - - - 75 - 75 PF
(at 1 MHz)
C b
-10 - 15 - 15 - - - 15 - 15 PF
(at 1 MHz)
'S/b -100 -100 - -100 - - - - -

tp - 0.4 « nonrap. -76 -100 -100 mA
tp 0.2 i nonrap. -76
R0JC - 17.5 - 17.5 - 23.3 j - 23.3 - 23.3 °C/W
2N-Sariai typat in accordance with JEDEC CAUTION: The sustaining voltages VceO<»u « b Pulsed: Pulse - 300 jus; duty factor <2%.
registration data format (JS-9 RDF-8). and Vc E r(sus) MUST NOT be measured on a
curve tracer.
PULSE OURHTION • 90 p>

| OC t)ET» U e' llllllllllllllf
•''°i collictortwjutth voltms (vet) .10 REPETITION RATE • 100 Hi II llll lllll1 1 1
COLLECTOR SUPPLY VOLTAOE IVr1-l-IOOlrt |||||||||||[|

"1 it 1 CASE TEMP
I c /Ii-IOI .I,j
(TC )'2S'C II I lllll llll It
1 tl §§||||||
I
N
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i"
I
:;
1 ^ssfTTTiHimiiuiiiiumu V
^ i"
ÎllllrSllllllllllllmn S 0..
y
H
it ""I
t -O.IH
1 -o.«B
i.
I a
\ s
«J -f
«
P
St
~ 0A i N 0.2
a m 1
-°-»S
9 l\
20 40 SO 00K 110
1
COLLECTOR CURRENT del — »* COLLECTOR CUHMHT lie) - mt

COLLECTOK CURRENT llcl— 1»«
MCtrlTIIIR
Fig. 4-Typlcel collector-to-emitter saturation Fig. 5-Typlcal gain-bandwidth product for all Fig. 6-Typical turn-on time characteristic for
voltage for all typat. types. 2NS41Sand2NS41S.
146.
POWER TRANSISTORS
2N5415, 2N5416, RCS880-RCS882
0 60 80 100 110
COLLECTOR CURRENT del — mA

S2CS-I7SI4
Fig. 8— Typical storage-time characteristic

for2NS415and2N5416.
-K> -I00 -I50
COLLECTOR-TO-EMITTER VOLTAGE (V CE )—V 92CS-2468S
Fig. 7— Maximum safe operating areas tor RCS880.
COLLECTOR CURRENT (If;) — mA
Fig. 10— Typical fall-time characteristic for

2N5415 and 2N5416
ss REPETITION RATE'IOOW
COLLECTOR SUPPLY VOLTAGE (Vcc )'-I00 V
2.3 CASE TEMPERATURE ITc)-29*C
% IC'I B -'OIe,'lB 2
iij %£ *$
2
:~ &P
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i '-
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§ m VM
i
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si
;
-K) -KX3 -300 mm 3H -20 -«0 -€C -»0

tW
-100
tflffmffff^
Hff
COLLECTOR-TO-EMITTER VOLTAGE (Vce>— V COLLECTOR CURRENT del— KlA

92CS-24M9
92CS-24693RI
Fig. 1 1- Typical saturated switching times for
Fig. 9-Maximum safe operating areas for RCS881 and RCS882. RCS880. RCS881 and RCS882.
,147
1 "
POWER TRANSISTORS.
2N5490, 2N5491, 2N5492, 2N5493, 2N5494, 2N5495, 2N5496, 2N5497

FEATURES
Hometaxial-Base, Silicon N-P-N • Low saturation voltage—
V CE (sot) = 1 V max. at c = 2 A (2N5490, 2N5491)
VERSAWATT
l
Transistors =
= 1
1
V max.
V max.
at lc = 2.5
at l
c = 3
A (2N5492, 2N5493)
A (2N5494, 2N5495)
General-Purpose Types for Medium-Power Switching and Amplifier Applications = 1 V max. at lc = 3.5 A (2N5496, 2N5497)
in
Military, Industrial, and Commercial Equipment • VERSAWATT package (molded silicone plastic)
•Maximum safe-area-of-operation curves specified for
DC and pulse operation
RCA-2N5490, 2N5491, 2N5492. 2N5493, These plastic-package power transistors differ
2N5494, 2N5495, 2N5496 and 2N5497* and in the currents at which
in voltage ratings
are hometaxial-base silicon n-p-n transistors. the parameters are controlled.
They are intended for a wide variety of •Formerly RCA Dev. Nos. TA7317, TA7318,
medium-power switching and amplifier appli- TA7315, TA7316, TA7313, TA7314, TA7311,
cations, such as series and shunt regulators TA7312, respectively.
and driver and output stages of high-fidelity
amplifiers.
Types 2N5491, 2N5493, 2N5495, and 2N-

5497 have formed emitter and base leads for
insertion into TO-66 sockets. Types 2N5490,
2N5492, 2N5494, and 2N5496 are elec-
trically identical to the 2N5491, 2N5493. BOTTOM VIEW KCS-27SI9
2N5495,and 2N5497 but have straight leads.
2N54yu
JEDEC TO-220AB
2N5491 2N5490 2N5494
Maximum Ratings, Absolute-Maximum Value*: 2N5494 2N5492 2N5496
2N5495 2N5493 2N5497 2N5492 2N5496
COLLKCTUR -TO-BASE VOLTAGE \,H () (Ml
COLLEt'TOR-TO-EMlTTER SI STAINING VOLTAGE:

With -1.5 volts <Vj}|,-) of reverse bias V,i,\(sus>
With external base-to-enntter resistance <RbK' V ( Îsusi
With base open
I'M).: .
\'
( |. (
)(9us) 40 70 \' -u — ' I
EMITTER-TO-BASE VOLTAGE V K u) i 5 V
COLLECTOR CURRENT
BASE CURRENT
1
\
(
H
.
3 3 3
A
A
ol I
TRANSISTOR DISSIPATION: p.,.

( FLANGE V _n I
At case temperatures up to 25' 50 W

C" 50 50 BOTTOM VIEW MC s-27 S 2o
At ambient temperatures up to 25'V 1.8 .8 1.8 W
At ease temperatures above 25°C Derate linr irly at 0.4 W "C •r s ee Figs. 1 & 2
At ambient temperatures above 25"C Derate lint arl> at 0.0144 W "C
JEDEC TO-220AA
TEMPERATURE RANGE: 2N5491 2N5495
Storage & Operating (Junction) (>5 to 50 » "c 2N5493 2N5497
LEAD TEMPERATURE (Durinn Soldering).
At distance > 1/8 in. <3.17 mm) from cm so for 10s max ...
CASE TEMPERATURE (!<;)• 25* C NORMALIZED POWER COLLECTOR MILLIAMPERES (I c )-IC0

(CURVES MUST BE DERATED LINEARLY MULTIPLIER — CASE TEMPERATURE (T c 25*C 1
WITH INCREASE IN TEMPERATUREI 00 '"-] g 85

is
.. ... Pin ^F QPfRATiON FOP 250 **hl V C ER (2N5496 8 2N5497)

80
P
S 4
^
\
°>sS ^^7
^rf
V ll
75
1
vceo
IT
^^ '2 3
fej
sf
70
VCER « N54 92 a 2 N54 93)
"
l ^ ts i.e So «o
vC
a - C2N5490.2 N549l,-=
2N5494 .2
-t
il »
VCER <2 NS494 a 2 N54 95)
d «
i gB 50
~l 2N S49 o a 2N 5' 9
is vceo m «* i
)
a a u 45
VCE
Vceo MAX 70V i
8 40
(2N5496.2 N5497)
in ia m in
35 1
6 6
_]
i 3 n* o3 in"
EFFECTIVE CASE TEW. M CASE TEIT. (T tF F M JcMC COLLECTOR-TO-EMITTER VOLTS (
6ASE-T0-EMITTER RESISTANCE IRbe) — OHMS
Fig. 1 - Derating curve for type* 2N5490 through 2N5497
inclusive. Fig. 2— Mox/mum operating areas for types 2H5490 Fig. 3— Collector-to-emitter sustaining voltage charac-
through 2NS497 inclusive.

teristics for types 2NS490 through 2N5497 inclusive.
148
POWER TRANSISTORS
2N5490, 2N5491, 2N5492, 2N5493, 2N5494, 2N5495, 2N5496, 2N5497

ELECTRICAL CHARACTERISTICS. Case Temperature (Tq) - 25°C Unless Otherwise Specified
DC ., Types Types Types Types

Characteristic Symbol
DC 2N5496 N5494 2N5492 2N5490 Units
Voltage 2
Current (A)
(V) 2N5W ; N5495 2N5493 2N5491
V VBE Mi i. Max. Mi n. Max. Min. Max. Min. Max.

CE 'c B
85 -1.5 1 -
Collector-Cutoff Current ! 55 -1.5 mA

CEV
With base-emitter junction 70 -1.5
reverse biased -1.5

85
'CEV -1.5 IDA
55
(T = 150°C)
c 70 -1.5
70 0.5 -
40 0.5 mA
Collector-Cutoff Current 'CER
55 0.5
resistance (R = 100 fi 70 3.5 -
BE )
'CER 40 3.5 5 mA
(Tc = 150OC) 55 3.5
Emitter-Cutoff Current -5 1 mA
'ebo
4
4
W3
2J 166
- 21D 100
e
DC Forward-Current Transfer Ratio
"FE 4 2.5 20 100
4 2 20 100
Voltage: V Efj(**>* 0.1 7 - 4 • 55 40 V

C
With base open
With external base-to-emitter 65 50 V

V CER (susf 0.1 8 - 5 -
resistance (R = 100 fi
BE )
With base-emitter junction e
V CEV(sus) -1.5 0.1 9 - 6 - 75 60 V
reverse biased
4 3.5 1.7
4 3
Base-to-Emitter Voltage v Be c 4 2.5 1.3
V
4 2 1.1
3.5 0.35 1
Collector-to-Emitter 3 0.3 V
VCE^')'
Saturation Voltage 2.5 0.25
2 0.2
Gain-Bandwidth Product f 4 0.5 .8 - .8 - 0.8 0.8 MHz

T
Sat. Switching Time: 3.5 0.35° 5
Turn- On V CC " 30 3 0.3° MS

•on
2.5 0.25° 5
2 0.2 5
b -
3.5 0.35 15
3 0.3*
Turn-Off V " 30 b n*
•off CC 2.5 0.25 15
2 0.2 15
Thermal Resistance:
Junction-to-Case 8 )-C - 2.5 - 2.5 2.5 2.5 °c/w
Junction-to- Ambient - 70 - 70 70 70 °c/w

*J-A
Ig, value (turn-on dim c

'
current).
fc
!_ value (tum-ofl base cutient). pulsed, puis* duration = 300 m». o»ty facta '
.149
U 1
POWER TRANSISTORS
2N5490, 2N5491, 2N5492, 2N5493, 2N5494, 2N5495, 2N5496, 2N5497

COLLECTOR-TO-EMITTER VOLTS (VccM COLLECTOR-TO-EMITTER VOLTS (VCE )-4 COLLECTOR -TO- EMITTER VOLTS (Vce)'<
120
I00 120 '"
^>
•
Z-IOO 5-100
5£eo -" fr
c^ x
A iS
C^. ^ yo eo <£ ,(-_
,o«. \
£
/
t
r V
Is
^£60
^ £ Vf ^ |*60
'I
4&f\
\
c
cLo \
£
•5 V\ 1
20
20 20
&
y V. \
\
a '
00 01 e ot 31 .
"io
COLLECTOR AMPERES (Ic) COLLECTOR AMPERES (Icl COLLECTOR AMPERES (Ic)
stes-wm mcS-i497»
Fig.4 Typical static beta characteristics for typos Typical static beta characteristics for typos
Fig. 6 Typical static bota characteristics for typos
Fig.5 •
2HS49Q through 2N5493 inclusive. 2N5496ond2NS497.

2H5494 and 2NS495.
CASE TEMPERATURE (T C )'25'C tiitj fis

COLLECTOR-TO-EMITTER VOLTS (V CE , -4 »ff
3 24
CASE TEMPERATURE {Tq) 'Z5*C W.':rl ::::
: -
~ UOt
-p-
~
1
22 a&
2 fa 4 TTr
g 16 >
ss
St
^ x»r k bv r^s
"*r> 2 3
::;:
::.
iiii
JJj£
60
120
100
Pn
S3
il 12
e ^
\ X
*T?T ti^
60
60
40
m 06 fyN 1 ' :::: ::::
fttf
"4
i 06 'V rT !!! i!.. [;:iT|Uji ;!u
H:
W
S 04
"ft
02
9
^ 2 0.2 0.4 0.6 0.8
COLLECTOR-TO-EMITTER VOLTS (VCE )
SKS -|4»77 COLLECTOR-TO-EMITTER VOLTS (VCE>
COLLECTOR AMPERES (I c >
92 cs-i4989
Fig.8 - Typical output characteristics for typos 2NS494 Fig. 9 • Typical output characteristics for types 2HS494
Fig. 7 - Typical gain-bandwidth product for typos 2N5490 and 2N5495.
ECT TO VOLTSIVc E>
, IT Mi
600
500
w\
HI Jt- lifaoo "°rf TT
-|-|-
1 1
1
£400
* 500 s±- + -*r -tt&

d "H~t" *W
$200
nws
< Wrffl
• 100 ,00
lYfyft
±
COLLECTOR-TO-EMITTER VOLTS (Vcj) 92CI-I4979 BASE-TO-EMITTER VOLTS (V 8E ) BASE-TO- EMITTER VOLTS (Vbj) 92CS-I4M9
Fig. 10 - Typical output characteristics tor typo* 2M5490 Fig.ll Typical input characteristics for typos 2H5494 Typical input characteristics for types 2H5490
Fig. 12
through 2N5493 inclusive. through 2H5497 inclusive. through 2N5493 inclusive.
COLLECTOR-TO-EMITTER VOLTS (VrpM (+ i±rl- -Mil

J.J 1 1 r.±
::::::rp::: -fff -H- 4jtr
6 :-::: **"t
4-1
-4 -+-
4+n'
t-M-1- -lU- T—
H h 44+--
« 4 - ~-W£b 'ViT 1T" -
-ffl& 1
1 1 1
± tfi^S llp-
£ :::::
£v S : lit
.u
p -t---~
X-^ ^
W?M 3^-
l*
-^+ -±5
2 :::::
S
8 i±::: 4|f[ ffit

+-- *!•*
-4 - ^+ *-
OS 04
BASE-TO-EMITTER VOLTS (VBE> BASE-TO-EMITTER VOLTS (V BE )
Fig. 13 - Typical transfer chcracteristics for types 2N5494 Fig. 15 - Typical transfer characteristics for types
Fig.14 -1 Typical transfer characteristics for types 2HS490 2NS490 through 2H5497 inclusive.
through 2H5497 inclusive.
through 2HS493 inclusive.
150.
.
POWER TRANSISTORS
2N5575, 2N5578
Features:
High-Current, High-Power, Hometaxial- Maximum safe-erea-of operation curves
l
S /|,-llmlt line beginning at 25 V
Base Silicon N-P-N Transistors High-current capability
Low saturation voltage at high beta
For Linear and Switching Applications in High-dissipation capability
Military, Commercial, and Industrial Equipment Low thermal resistance
RCA-2N6575 and 2N6878• are high-current, high-power, linear regulators power-iwitching circuits, series- or shunt- TERMINAL DESIGNATIONS
hometaxial-base silicon n-p-n transistors. They differ in regulator driver and output stages, dc-to-dc converters, In-
maximum voltage and current ratings. verters, control circuits, and solenoid (hammerl/relay drivers.
These power transistors are intended for a wide variety The high-current capability (100-A peak) makes these types
of high-current, high-power linear and switching applications particularly suitable for circuit designs that now require
such as low- to medium-frequency amplifiers, switching and several low-current types connected in parallel.
" ~—~~~~
They are supplied in the Modified JEDEC TO-3 package
Formerly RCA Ov. Not. TA7018 and TA7017, rtiptctivaly. with 0.060-1 n. Dia. Pins.
MAXIMUM RATINGS, Absoluts-Maximum Values:

Mcs-m>«
2N567S 2NU678
•COLLECTOR-TO-BASE VOLTAGE V CB0 ModH 1(4 JEDEC TO-3
CBO 70 90
80 V
•COLLECTOR-TO-EMITTER VOLTAGE:
With base open, ustaining
V CE0 (su.) 50 70 V
<R BE >-10n8.V NOTE! CURRENT DtRATINB AT CONSTANT
BE --1.6V v 70 V0LTA6E APPLIES ONLY TO THE DISSIPATION
go v LIMITE0 PORTION OP MAXIMUM-OPERATINe-
•EMITTER-TO-BASE VOLTAGE V pao 8 8 V AREA CURVES IFIOS 1,4100 NOT OEPATE
•COLLECTOR CURRENT (Continuous! l" 80 BO I THE SPECIFIED VALUE* FOR 1. MAX.
g (PULSED OR CONTINUOUS!
•COLLECTOR CURRENT (Peak)
100
*
gJJ
•BASE CURRENT (Continuous) I- 20 IS A
•TRANSISTOR DISSIPATION: ey
At case temperatures up to 26°C and V CE
up to 25 V 300 300 W
At case temperatures of 100°C and V
CB of 25 V 150 150 W
At case temperatures up to 25°C and V
CE above 25 V S» Fig. 7
At case temperatures above 25°C and V
CE above 25 V s.e Fiji 1 & 2
Operating (Junction) -65 to 175 °C
Storage -66 to 200 °C
•PIN TEMPERATURE (During Soldering): 25 SO
CASE TEMPERATURE ITC I-'C
At distance ;> 1/32 in. (0 .8 mm) from case for 10 s max 230 °C
• In accordance with MCS-ISOMflZ
JEDEC registration data format JS-6 RDF-1
Fig. 1 • Dissipation derating curves for
both types.
COLLECTOR AMPERES del

%KS-«o»m
Fig. 3 Typical dc beta characteristics
for 2N5575.
COLLECTOR-TO-EMITTER VOLTS (V
CE ) '•O.I «
92CS-I5085R2 COLLECTOR AMPERES dc >
KCS-iaoMRi
Fig. 4 • Typical dc beta characteristics

Fig. 2 — Maximum operating areas for both types. for2N5578.
151
POWER TRANSISTORS
2N5575, 2N5578
ELECTRICAL CHARACTERISTICS, At Cut Ttmptrtton (Tq) - 2S°C Unlen Othmrim SptcifM CASE TEMPERATURE IT C I • 2S'C
TEST CONDITIONS LIMITS l l l
Current V CE >
Voltage fjSao *-
CHARACTERISTIC SYMBOL Vde Adc 2NS57S 2NBS78 UNITS ^2N5578
SS 75
VCE VBE •c >B
Min. Mix. Mil, Max. V CE0< Ul )
JS- 70
CollKtor Cutoff Current:
With bate-emitter 60 -1.5 - 10 - mA 5Ses
'CEV
junction reverse -biased 80 -1.5 10 V
CER ( »"'
80
10 - mA ii --. ^2N5S75
With external bate-emitter 'CER 50 «->
- e5 S5 "^
resistance (Rggl-IOft 70 10 i v CE0 <,u »
so
-i.
With bate-emitter 60 -1.5 - 20 ~ mA 1 -f
'CEV„
junction reverte-biated IT -150°C) 80 -1.5 20 1 1
C l
• 10* •l
Emitter Cutoff Current -8 - 10 - 10 mA EXTERNAL BASE-TO-EMITTER RESISTANCE IR BE > —

]
EBO 9ZCS-I507IR2
Col lector-to-Emitter V (BR»CEO 0.2 50 - 70 -

V Fig.5- Collector-to-emitter sustaining
Breakdown Voltage voltage characteristics for both
8 3 10 40
DC Forward Current h
FE 40» types.
Transfer Ratio 4 60* 10 40
Susteining Voltage: V CE0 (sus)
(St* Figs. S and 6)
With bete open 0.2 50b 70 b V

With base-emitter
junction reverse-biased, V CEX (sus) -1.6 7 70* - 90° - V
R BE -10»
Base-to-Emitter Voltage VBE
a 4 40* _ ~ 2.5 V
4 60* 3
Collector-to-Emitter V CE (sat) a 40* 4 - - 1.5 V

Seturation Voltage 60* 6 2
Base-to-Emitter V BE lsat) a 40* 4 - 2.5 V

Saturation Voltage 60* 6 3 _
Output Capacitance: (Vcb - 10 VI c ob - 2000 - 2000 pF
COLLECTOR-TO-EMITTER VOLTS <VC E>
Input Capacitance c ,b -0.6 - 4000 - 4000 pF 92CS-ISOS5SI
Emitter, Small-Signal, 2NS575.
Short-Circuit Forward 4 10 2 - 2 -
|N.|
Current Transfer
Ratio If-ftiMBiiL
Saturated Switching 40 4 10
Time (V C C - V) »
Turn-on lime 'ON 60 6 15
"S
Turn-olf time 40 4 - - 10
'OFF
60 6 15
Forward-Bias
Second- Breakdown 25 12 - 12 - A
*S/b
Collector Current ll-lll
Second Breakdown
Energy (With base -1.5 7 08 - 0.8 - J
E
reverse -biased. S/b
R BE M0U. L 33mH) =
Thermal Resistance ' 0.5 - 0.5 °C/W

'
R
(Junctionto-Case) »JC COLLECTOR-TO-EMITTER VOLTS <Vce>
•in accordanca with JEDEC raoiitratton data format JS<6 ROM.

Fig. 7 - Typical output characteristics
•Pulatd; pulH duration £ 360 fit, duty factor -0.02.
^CAUTION: Tha sustaining voltaoat V ce0 (hjs> and V CEX (sus> MUST NOT bt maamirad on a curvt tracar.
for 2N5578.
CASE TEMPERATURE <Tcl'29*C
INDUCTANCE (LI -33 mH
29
20 5
19 8
*l
itvi >L 3
H 9 »!
Hcs-isoarn
Fig. 8 - Reverse-bias second-breakdown

characteristics for both types.
152
, , 3
POWER TRANSISTORS
2N5575, 2N5578
COLLECTOR-TO-EMITTER VOLTS lVce )>4
I00
CASE TEMPERATURE (T c )»iO0«C |l| M|l|||| |l|tt|tf|t|l
||| ,
|l
;
l|l II
|| i
II 1 111
—
—
^#
- 2
.
r^
-f+\
-£/
1 «
i
hf/l—
**•
i
,J
(
n —
HI i
^°
i
8 or _j
<
1 100 3ffl s-
"b e
:2N5 575 fe 2
I
H 2N5578 0.9 i. s z.s : 3.9 « 49 9
Z hM^jllj BASE-TO-EMITTER VOLTS (V BE )
Ul 1
gg||]||| il" WC1-I3072AI

K 4
CC :
Tc (MA Fig. 10 — Typical transfer characteristics for
U -cc*J," IU0 L)S| 2NS575.
IE
1 S^^l^yiii
O S_
Ul
_l
-I
o
<> 10
"r-TU
Hi n
IffifltttTTltlf
100,
COLLECTOR-TO-EMITTER VOLTS IV :e>'«
8
1 ^ffiw linn MP £^0
6
8 a "i*
K
.1
Hi
•j
4 -J? e
*
s
z / nt
^P|I</h- LIMITED ^||j|^|j{|||^ 1 1 j
<
K
o
1
•
•
4 //?»*
B5»
2 i
1
:
-E0 m; X )-50V( 2N! 575) ô

1
llijl i
iljftlMWj- ;
HÊ
1 '
'CEC (r A <1«70 V <2I> 557e)[^mWw]| NT -fall
£
1
i.i. iKNi ;: I 1111 llllllll !
0.01
10 KX) c 0.9 1 S 3 2.5 3 9.5 4 49 5
BASE-TO-EMITTER VOLTS (V BE
COLLECTOR-TO-EMITTER VOLTAGE (V C E>" I
92C3-I901ORI

for2N5S78.
f/ff. 5 — Maximum operating areas for both types at 7> = 100°C.
COLLECTOR-TO-EMITTER SATURATION VOLTS [Vc£(Ht>]

COLLECTOR-TO-EMITTER SATURATION VOLTS [Vee<»»l>]
92CS-IS063RI COLLECTOR AMPERES (Ic)
92CS-IMM2RI
Fig. 12 — Typical saturation voltage Fig. 13 - Typical saturation voltage Fig. 14— Typical saturated switching
characteristics for 2N557S. characteristics for 2N5S78. characteristics for both types.
153
POWER TRANSISTORS.
2N5632, 2N5633, 2N5634

Maximum safe-area-of-operation curves
The RCA-2N5632, 2N5633 and 2N5634 are These devices differ inmaximum voltage Hermetically sealed JEDEC TO-3/TO-
epitaxial-base silicon n-p-n transistors in- ratings. They are supplied in JEDEC TO- 204MA package
tended for wide variety of high-power,
a 204MA hermetic steel packages. High gain at high current
high-current applications, such as power-
switching circuits, driver and output stages
for series and shunt regulators, dc-to-dc con- Applications:
verters, inverters, and solenoid (hammer)/
relay drivers. High-fidelity amplifiers
Solenoid drivers
2N5632 2N5633 2N5634 TERMINAL DESIGNATIONS
V CEO 100 120 140 V
I
! V CBO 100 120 140 V
V EBO 7 V
I in A
„ 'cm
1K A
» 'b
R A
* PT
AtTC<25° C 1RO W
At Tc > 25°C derate linearly n*»R7 W/°C
*
*
TJ' T«fl • ••
T L at 1716 ± 1/32 in. (158 ± 0.8 mm)
_ -66 to 200 _ °C JEDEC TO-204MA
from cate for 1 s MR °C

CAM TtMKRATURC<1c ) tt*C|

(CUftVM MUSTK DERATED
IN
TS 100 liS IH IT* 200

MM TCHMMTUM (Tel— *C
MLI-IMM
Fig. 2— Current derating curve for all types.
ZfBBBi COLLECTOR- T0-EMITTER V0LT4SC (Vct )'2 V

K •
; 4
o
i
«
«£ c___ — ""
"^
^ —-
o»t s:
s • s>
«
K
4 ' !*»*
^5
'
\A
!
1
k i
'
» • ! 1 6 * ! < e • 1 6 •
0.01 100
COLLECTOR CURRENT (X c )-A
< 4 • a'| % « MCS-90l4f
no Fig. 3— Typical dc beta characteristics as a function
COLLECTOR- TO- EMITTER VOLTAGE (Vc E>-V MCM .jo5oa of collector current for all types.
Fig. 1 — Maximum operating anas for all types.
154
.POWER TRANSISTORS
2N5632, 2N5633, 2N5634

ELECTRICAL CHARACTERISTICS, At Case Temperature T c - 25°C *e /Ig-tO^
Unless Otherwise Specified
i
| 2£
TEST CONDITIONS LIMITS <
C
2N5632 2N5633 2N5634 UNITS
TERISTIC Vdc Adc u'Z.
v C e v B e 'c
100 -1.5
>B Min. Max.
1.0
Min. Max. Min. Max. 5 £
O 1
IKilPB
1 IPf^nB
'CEX 120 -1-.5 - - - - 1.0 - k
o
140 -1.5 1.0
mA 115
i
100 -1.5 - - - 5.0 -
T C =*150°C 120 -1.5 - 5.0
140 -1.5 5.0
Fig. 4 — Typical saturation voltage characteristics
for all types.
50 1.0
'CEO 60 - - - - 1.0 - mA
70 1.0
= 100 1.0
'CBO 'E
V CB = Rated V CB 120 - - - - - 1.0 - mA
140 1.0
'ebo
- 7 - - - 1.0 - 1.0 - 1.0 mA
V CE0 (sus)b - - 0.2 100 - 120 - 140 - V
2 — 5 — 25 100 20 80 15 60 COLLECTOR-TO-EMITTER VOLTAOE <*ceW2 V|||||||||j
h FE a
2 10 5 5 5
V BEa 2 - 5 - - 1.5 - 1.5 - 1.5 V 1
— — 7.5 0.75 — 1.0 — 1.0 — 1.6

<
111 11 1111 111 1111 llllKlll
V CE (sat)a V 1
m 0.8
10 2.0 2.0 2.0 2.0 tlllllllll lllllllllllHltilllllllllllrrWÎ^^^M
f f = 0.5 MHz 20 - - - - - MHz z
T 1 1 1 1
g 0.6
h fe f = kHz 10 - 2.0 - 15 - 15 - 15
K
D
»
1
V BE (sat) 7.5 0.75 - 2.0 - 2.0 - 2.0 V u 0.4

<
a
Cobo f - 0- 1 MHz 10c - - -
300 300 300 pF
l
E =
'S/b 50 3.0 0.2 0.6 I 1.4 1.8 2.2 2.6
t = 1 s nonrep. 45 - 3.33 - - A BASE.-TO-EMITTER VOLTASE (V BE)-V

p 92CS-30I48
40 3.75
Fig. S— Typical input characteristics for all types.
R 0JC - - - - - 1.17 - 1.17 - 1.17 °C/W
'Pulsed; pulse duration < 300 ms.Duty factor 2%. <
"*
CAUTION: Sustaining voltage, Vq^q(sus) MUST NOT BE measured on a curve tracer.
'CB-
COLLECTOR -TO- EMITTER V0LTAGE(V CE ) 2V B

12
|||]||||||
2-4
IBlc OLLEC TOR SUPPLY VOLTAGE ( Vfc c )' 30 V
ftjttffl 1 B|-*B -l/IOIc Si
IIKIIII :ase t EMPERATURE (Tcl'25'C S
1 IC
I 2
*
I- 8
Z
s
if
3
c 'HitlHtillllPPîHIll
iil''P Wt
111 11
9
lull » 1 1 1
u 4
iiff^ mmmBmB g <« iS lllilmfllllllllllllllli lllllll
° 2
IIIIIIIIIIIIHIW-?
IWiir'-''J
illllllllllllllllllllllllllllrff
1 ^M '.Mfflllll 111 11
Si
5
0.2 0.6 I 1.4 1.8 2.2 2.6
COLLECTOR CURRENT (lc>~A
BASE-TO- EMITTER VOLTAGE <V Kt-V 92CS-KH49 Mc s-30I5I
Fig. 7 — Typical saturated-switching times

Fig. 6— Typical transfer characteristics for all types.
for all types.
155
POWER TRANSISTORS
2N5671, 2N5672
Silicon N-P-N Power Transistors • Maximum Safe-Areo-of-Operation Curvet . . .
's/b
'' m ' T ''"* beginning at 24 V
High-Current, High-Speed, High-Power Types for Switching and • Fait Turn-On Time . . . t
on
= 0.5us max. at l^= 15A
Amplifier Applications • High-Current Capability . . .
hp E , VCE (»at), VBE (sat), & VBE measured at l

c
= 15A
RCA Types 2N5671 and 2N5672* are epitaxial silicon

• Low V CE (sat) = 0.75V max.
MAXIMUM RATINGS, Aoso/ure-Moximum Values:
n-p-n transistors having high current and high power • HighP = 740Wmox. at T c = 25°
* COLLECTOR-TO-BASE 2N5671 2N5672 T
handling capability and fast switching speed. The
VOLTAGE, V CB0 120 150 V
2N5672 is similar to the 2N5671 except that it has high- TERMINAL DESIGNATIONS
er voltage ratings and lower leakage currents. These COLLECTOR-TO-EMITTER SUSTAINING
devices are especially suitable for switching-control
VOLTAGE:
With base open, V CEO (sus) 90 120 V
amplifiers, power gates, switching regulators, power-
switchingcircuits, converters, inverters, control circuits. V
<R BE ) i 50fl, V CER (sus) 110 140
Other recommended applications included DC-RF amp- With external .base-to-emitter resistance
i 50 fl & V V
lifiers and power oscillators. (R
BE )
BE = -1.5, V CEX (sus) 120 150
They are supplied in the JEDEC TO-3 hermetic steel EMITTER-TO-BASE VOLT AGE. V EB0 ... 7 7 V
package. COLLECTOR CURRENT, Ic 30 30 A
*BASE CURRENT, I B 10 10 A
JEDEC TO-3
'Formerly Dev. Types TA7323 and TA7323A, respectively TRANSISTOR DISSIPATION, P T :
NOTE CURRENT DERATING AT CONSTANT VOLTAGE APPLIES tit t ft

At case temperatures up to 25° C ONLY TO THE OlSSfPA TON-LIMITED PORTION AN0 Is/fc-LWITEO £4 f {-. +-
and V
CE up to 24 V 140 140 W PORTION OF MAXIMUM-OPERATING-AREA CURVES (FIG.I). lit M "
00 NOT DERATE THE SPECIFIED VALUE FOR l£ •»* Hitf
At case temperatures up to 25° C
and V CE above 24 V See Fig. 1
Trnr +Ht tr n 4tl+f!+ :
At case temperatures above 25° C

jjjjj-t
JU;
and V above 24 V See Figs.l&2. 1 "
CE li
TEMPERATURE RANGE:
Storage & Operating (Junction) —65 to +200 °C
JJllt
>^%s
PIN TEMPERATURE (During Soldering)
At distances * 1/32 in. from seating - 1 t

j
TrS
-rH-^p^y-tfc
plane for 10 s max 230 C 3§ ie
2S a
In accordance with JEDEC registration data format (JS-6, RFD-1)
EFFECTIVE. CASE TOP. OR CASE TOT. (Tff f OR lc>-«C "**>

Fig. 2- Dissipation derating curves for
types 2N5671 and 2NS672.
100 CASE TEMPERATURE IV «25*C

8
(FOR TC ABOVE 25*. DERATE L INEARLY)
6
|
4
ICMAX. (CONT NUO JS)
30
Vc
2
°*
>/»
^ k*
>
"u 8
°\ \
H\ t
«o.i
12
X
Lu
6
^\\ COLLECTOR AMPERES (IC)
\
<
Fig. 3- Typical dc beta characteristics
tf \ \
or
for types 2N5671 and 2N5672.
o
COLLECTOR- TO-EMITTER VOLTS (VCE>'! tt
UJ
o
o
A s
8
.
V
6
V ' 5
!l s
s
4
E0 MAX. 120 / \
(2N567 21 1 »
2
J 5
vc E0 MAX.* 90 V
(2N567 11
1
— "! i H
01 1
4 1 X A l.<
BASE-TO-EMITTER VOLTS (VbE>
COLLECTOR-TO- EMITTER VOLTS (V CE ) 92CS-I5650 Fig. 4 - Typical transfer characteristics
2N5671 and 2NS672. for types 2N5671 and 2N5672.

Fig. 1 - Maximum operating areas for types
156
POWER TRANSISTORS
2N5671, 2N5672
ELECTRICAL CHARACTERISTICS, Cose Twnperofur. (T ) = 2S°C Un/ast Oth.rwij. Specified
c COLLECT IDR- TO-EMITTER MOLTS (V
«"^
j~-
DC DC
Type Type Hi
CHARACTERISTIC SYMBOL Voltage Current UNITS
2N5671 2N5672
(V) (A)
S 600
*
V CB VCE VBE •c »B Min. Max. Min. Max.
1
'ceo 80 10 10 mA i
110 -1.5 - 12 - mA
Collector-Cutoff Current 'CEV
135 -1.5 10 mA
'CEV - 100 -1.5 - mA
15 10
(T =150° C)
c
Emitter-Cutoff Current - - -7 - - - mA
'ebo 10 10
Co lector-tor Emitter
I
VcEO< sus )
- - - 90° - 120° - V
Sustaining Voltage:
0.2 types 2NS671 and 2N5672.
With base open
With external base-to-emitter -

vcer( sus ) - - - 0.2 110° 140° - V
BE )<50n
resistance (R
With base-emitter
junction reverse biased V CEX< SUS ) - - -1.5 0.2 - 120° - 150" - V
&R BE *50O
Base-to-Emittet Saturation Voltage V (sat) - - - 15 1.2 - 1.5
- 1.5 V
BE
VBE - 5 - 15 - - 1.6 - 1.6 V
V CE (sat) - - - 15 1.2 - 0.75 - 0.75 V
Saturation Voltage
DC Forward-Current - 2 - 15 - 20 100 20 100

Transfer Ratio "FE 20
5 20 20
Second- Breakdown
b - 24 - 5.8* - 5.8* - A COLLECTOR-TO- EMITTER VOLTS (V ) 2CS-IM52
Collector Current 'S/b CE
With base forward biased 45 _ _ 0.9= o.y A
Fig. 6- Typical output characteristics
Second- Breakdown Energy for types 2N5671 and 2N5672.
With base reverse biased
EsV - - -4 15 - 20 - 20 - mj CASE TEMPERATURE (Tc ) . 23 *C
R BE =20f>, L = 1B0mH 1
VCER (»u$)
Z 140
Gain-Bandwidth Product
Output Capacitance (At 1 MHz,Ie=0)

'T
c ob
-
10
10 - 2 - 50 -
900
50
- 900
- MHz
PF
is
"1
l3° ^ >U s)
VCEO
Saturated Switching Turn-On Time v C c= - -
"B r - -
t|l20
2 1
*on 15 0.5 0.5 fjS

(Delay Time + Rise Time) 30 V 'Br
1.2 iu|-"°
Saturated Switching «$
v C c=
30 V
- - 15
bi-
- 1.5 - 1.5 A*
dS
o
ioo %
Storage Time IBp
90
1.2 4 >L
V CC= 'Br
Saturated Switching - - 15 - 0.5 - 0.5 MS
«f
30 V Fig. 7 - Collector-to-emitter sustaining
Fall Time 'Br
voltage characteristics for types
1.2
Thermal Resistance
2NS671 and 2NS672.
R 8JC - 10 - 5 - - 1.25 - 1.25 °C/W
(Junction-to-Case)
COLLECTOR SUPPLY VOLTS (Vccl'30
I C -l2 51 Bi .-IZ51
a Pulsed; B2
pulse duration < 350 «s, duty factor=0.02
CAUTION: The sustaining voltages V CE0 (sus) and V CEX lsus) MUST NOT
I.2
*S/b <s defined as the current at v

forward -biased for transistor operation m the active region
Pulsed; 1-s, non-repetitive pulse.

8 as
I
!"**
S/b is defined as the energy a< which second breakdown occur r specified reverse-bias conditions. E s/b =V2Ll'
where L is a series load or leakage inductance and is the peak
i 06
I c
*ln accordance with JEDEC

S4
I
registration a format JS-6RDF-1.
1 04
^&~
<4i'i
02 "*— 'Jt-
COLLECTOR AMPERES del 9ZCS-
Fig. 8- Typical saturated switching

characteristics for types
2NS671 and 2N5672.
_157
POWER TRANSISTORS
2N5781-2N5786
Silicon N-P-N and P-N-P Epitaxial-Base Features:
Complementary-Symmetry Transistors Maximum safe-area-of-operation curvet
Hermetically sealed package

General-Purpose Types for Switching and Linear-Amplifier Applications High gain at high current
High breakdown voltages

RCA-2N5781, 2N5782, and 2N5783 are epitaxial-bate silicon These transistors are intended for medium-power switching and
p-n-p transistors complements of the hometaxisl-bese silicon
- complementary-symmetry audio amplifier applications.
n-p-n types 2N5784, 2N6785, and 2N5786 * respectively. TERMINAL DESIGNATIONS
The three types in each family differ primarily in voltage ratings
• Formerly RCA On. Types TA7270. TA7271, TA7272, TA7289.
and saturation characteristics.
TA7280, and TA7291 respectively.
P-N-P 2N5781"
N-P-N 2N5784
•COLLECTOR-TO-8ASE VOLTAGE V CB0 9«CS-275I2

* with external base-to-emitter
resistance (Rggl 100ft
JEDEC TO-39
VcER**"'
with base open VCE0 («ui)
•EMITTER-TO-BASE VOLTAGE V EB0
c
•CONTINUOUS BASE CURRENT Ig
At casa temperatures up to 25 C
At ambient temperatures up to 2B°C
At case temperatures above 25 C Derate linearly 0.057 W/ C, or see Fig. 1
At ambient tempereturas above 26°C Derate linearly 0.0057

Storage and operating (Junction)
At distance > 1/32 In. (0.8 mm) from testing plane
for 10 s max.
•In accordance with JEDEC registration date format JS-6 RDF-2. For p-n-p devices, voltage and currant values are negative.
ELECTRICAL CHARACTERISTICS. At Casa Temperature (Tc) - «?5°C unless otherwise specified
TEST CONDITIONS* LIMITS

CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N6781 2N5784 UNITS
Vdc Adc p-n-p n-p-n
VCE VB E 'C B Min. Max. Min. Max. EFFECTIVE CASS TEMPERATURE OR CASE TEMPERATURE (T EF f ] OR (Tc ) - "C
it»mm
Collector Cutoff Current: Fig. 1 - Dissipation derating curve for all types.
With external base-to-emitter 65 - -10 - 10 **A wo
COLLECTOR-TO-EMITTER VOLTAGE (VcE»- -W
resistance (Rqsj) - 100 ft CASE TEMPERATURE (T^ 2S"C
'CER
AtTc-IBO'C 65 - -1 - 1 mA
I
With base-emitter junction reverse-
biased and external base-to-emitter -76 1.5 - -10 uA
resistance (Rbe) " 100 17 76 -1.6 : 10
•
'CEX -75 1.5 -1 - i '

AtT c -150°C
:
mA i
76 -1.5 1 ; .
%
With base open 'CEO 60 - -100 - 100 HA a
Emitter Cutoff Current -5 - -10 - 10 uA

ebo
l,t
DC Forward-Current Transfer 2 1« 20 100 20 100 4 « • - «»
Ratio "FE 2 3.2" 4 4 COLLECTOR CURRENT (!£) -
Collector-to-Emitter Sustaining Fig. 2 - Typical gain-bandwidth product for

Voltage (see Figs, 2 and 3): 0.1» -6ob - 65b -
VcEO< sus) V 2NS781, 2NS782, & 2N5783.
With base open

- -
CASE TEMPERATURE IT C) • W (V C r) . 2V
V CER (sus) 0.1« -80° 80b

resistance (Rue) " 100 ft
i
Base-to-Emitter Voltage VB E 2 1« - -1.5 - 1.5 V
Voltage (measured 0.25 in v CE <»t> 1» 0.1 - -0.5 - 0.5 V S 1.0
E
(6.3S mm) from case) '
i
Magnitude of Common-Emitter, | 4
Small-Signal, Short -Circuit, I

Forward-Current Transfer Ratio 1' Ihfel
f -4 MHz -2 -0.1 2 15
0.1
- 200 kHz - 5 20
f 2 0.1
COLLECTOR CURRENT 0c> -
Short-Circuit, Forward-Current 2 0.1 26 - 25 - Fig. 3 - Typical gain-bandwidth product for
hfe
Transfer Ratio (f - 1 kHz) 2N5784. 2N578S, & 2N5786.
158
POWER TRANSISTORS
2N5781-2N5786
ELECTRICAL CHARACTERISTICS. At Cm Ttmptnwn (Ttf - 2?C unlm other*** iptcifhd

CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2NB781 2NS7S4 UNITS
Vde Adc P-n-f> n-p-n
VCE VBE 'c >B Mn. Max. Mki. Mm.

Saturated Switching Time (Vgc "
30V,I B1 -I B2 >: *0N -1 -0.1 - 0.6 -
Turn-on (tj + t r ) 1 0.1 5
M»
Turn-off -1 -0.1 - 2.5 -
(t, + tf ) *OFF 1 0.1 15
Thermal Resistance:
R 8JC - 17.6 - 17.6
Junction-to-caie
"C/W
Junction-to-ambient R 9JA - 176 - 176
Fig. 4 - Typical transfer characteristics for
types 2N5781, 2NS782, 2N5783.
ELECTRICAL CHARACTERISTICS, At Cut Ttmpertturt ITC) •'

2b" C unlm othvwit* tptcifltd
TEST CONDITIONS4 LIMITS

Vde Ade p-n-p n-p-n
VCE VB E •c 'B Mm. Max. Mln. Max.

With external baie-to-emitter 60 - -10 - 10 uA
resistance (Rqe) " 100 11
'CER
AtT c -160°C 60 - -1 -, 1 mA
With base-emlttar junction reverse-
biased and external base-to-emitter -60 1.6 -10 - uA
resistance (Rbe' " 100 12 60 -1.6 _ 10
*CEX S.4 U II 1.1 1.1 M U
MSt-TOfm-mai vSLTMa (Vm) -i
-60 - -1 -
AtTc -160'C 1.6
mA nm
60 -1.6 1
Fig. 5- Typical transfer characteristics for
With base open
'CEO 36 - -100 - 100 fA types 2NS784, 2NS78S, 2NS786.
Emitter Cutoff Current
<EBO * -6 - -10 - 10 jlA
"FE
2 1.2* 20 100 20 100 m m$ IJTTTTTl CMS TaartXATIMI (Tr) • B*C
Ratio 2 3.2« 4 4
1 1 IT
""rmf llllfmilllllllllllllllllllllllllllllllllll IIMIIIIIIIIIII TnT
Voltage (see Figs. 2 and 3): v CEO ,,u *l 0.1« _60b - 60° -
With bate open
V
• "IBlllBllllllilll l|||lllllllll|ipiiPii
resistance (Rgcjl- 100 12
V CER (sus) 0.1» -66* - 66° -
* m
Base-to-Emitter Voltage VBE 2 1.2» - -1.6 - 1.6 V fBWi^MllMlllllllllllll
Collector-to-Emitter Saturation ffffm HI lliiiiinl
Voltage (meesured 0.25 in V C E(»t) 1.2» 0.12 - -0.76 - 0.76 V
(6.36 mm) from case) 3.2» 0.8 -2 2 m Wm 'MitmlHi^'--
Forward-Current Transfer Ratio'1
f MHz
- 4
M -2 -0.1 2 16
-0.1 -1.0 -I.S
oxxacro* cuwwmt «c> - a

-2.0 -2.1
f-200kHi 2 0.1 - - 6 20 Fig. 6 Typical saturated switching characteristics

Common-Emitter, Small-Signal, for types 2N578I, 2N5782, 2N5783.
Short-Circuit, Forward-Current
"fe 2 0.1 25 - 26 -
Trensfer Ratio (f - 1 kHz)
Saturated Switching Time (Mqq -
30 V, B1 - B2 ):
l l
Turn-on <ON -1 -0.1 - 0.6 -

(t
d + tr | 1 0.1 6
V*
Turn-off -1 -0.1 2.6
+ «f) *0FF 1 0.1 _ _ 16
(«s
Thermal Resistance:
RjJC 17.6 - 17.6
Junction-to-case "C/W
Junction-to-ambient "«JA - 176 - 176
* In accordance with JEDEC registration data format JS-6 RDF-2. * For p-n-p devices, voltage and current values are
* Pulsed, pulse duration « 300 /is, duty factor - 1 .8%. negative.
» CAUTION: Sustaining votfg- V
ceo (tu$L and VC£ft ($u$) e Lead resistance is critical in this test.
MUST NOTbt m—tund on t curve tnemr. d Meesured at a frequency where |hf ( | is decreasing
et approximately 6 dB per octave.
Fig. 7 - Typical saturated switching characteristics
for types 2NS784, 2N578S, & 2N5786.
159
POWER TRANSISTORS
2N5781-2N5786
ELECTRICAL CHARACTERISTICS, At Case Temperature,{Tq\ - 25° C unless otherwise specified COLLECTOR- T0-EMTTER VOLTAGE (V ct ) - 2V
-
• ISO'C
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N5783 2N5786 UNITS I '
Vdc Adc p-n-p n-p-n risT """"-"^î

£ 100
-
1
VCE VBE 'c <B Min. Max. Min. Max. *

i
!
|3 \
CASE EttPERATUREfTc -» sx
— X
With external base-to-emitter 40 - -10 - 10 MA s
resistance (Rgg) • 100 n I ». -
'CER 5 !
AtT c =150°C 40. - -1 - .

1 mA E .
£ '

- -10 -
biased and external base-to-emitter
resistance (RgE) = 10 ° ^
-45
45
1.5
-1.5 10
M
'CEX COLLECTOR CURRENT (l c l - A
-45 1.5 - -1 -
AtT c = 150°C
mA Fig. 8 - Typical dc-beta characteristics for
45 -1.5 1
- -100 - type 2NS781.

With base open 'ceo 25 100 MA
Emitter Cutoff Current -3.5 - -10 - 10 "A
'ebo
tooo (
DC Forward-Current Transfer 2 1.6" 20 100 20 100
Ratio "FE I
2 3.2" 4 4
V CE0 (sus) 0.1 a -40 b - 40b -
Voltage (see Figs. 2 and 3): *2S B C . ~ -
it ""
With base open

V CER (sus) 0.1 a
-45b - 45" -
V ft
1
»
,
>**C SE TEMPER TU RE
—h- IT C ). -6S°C
-I
-
resistance (Rue' = 100 ^
Base-to-Emitter Voltage VBE 2 1.6a - -1.5 - 1.5 V - —

\
Saturation Voltage (measured V CE (sat) 1.6a 0.16 - -1 - 1 V
0.25 in (6.35 mm) from case) c 3.2* 0.8 -2 2
Small-Signal, Short-Circuit, COLLECTOR CURRENT 0c> -
Forward-Current Transfer Ratio" h fe|

f = 4 MHz
l
-2 -0.1 2 15
Fig. 9 - Typical dc-beta characteristics for
f = 200 kHz 2 0.1 - - 5 20 type 2N5784.
Short-Circuit, Forward-Current n fe 2 0.1 25 - 25 -
Transfer Ratio (f » 1 kHz)
Saturated Switching Time -

(Vcq 1
30 V, B1 = B2 ):
l l
• IS0«C
Turn-on *ON
-1 -0.1 - 0.5 -
5 % 100
—rs^ ^^ ^
d+
(t tr ) 1 0.1 MS h— >~t !v
Turn-off -1 -0.1 - 2.5
Si
i
•
4
CASE E«PER E TC •C -s
^ kV
(t
s
Thermal Resistance
+ t
f )
l
OFF 1 0.1 - 15
1 '
^
V^ ^s
- 3 10
Junction-to-case 17.5 - 17.5 °c/w

A
RflJC
Junction-to-ambient R 9JA " 175 - 175 1 '
'
* In accordance with JEDEC registration data format JS-6 RDF-2. t For p-n-p devices, voltage and current values are negative.
a Pulsed, pulse duration = 300 us, duty factor * 1 .8%. c Lead resistance is critical in this test.
COLLECTOR CURRENT Hc> - A
b CAUTION: Sustaining voltages Vq^qIsus), and V CER (sus) d Measured at a frequency where |hj
e| is decreasing at
Fig. 10 - Typical dc-beta characteristics for
MUST NOT be measured on a curve tracer. approximately 6 dB per octave.
type 2N5782.
Woo, COLLECTOR-TO-EWTTER VOLTAOE (VcE> 2"

10M IMfl t
i
1 '
-- 1
«1S0«C • M0«C
• ism: 2 1
"" - :•„
* • ^CASE
-t3? -=fti
JRI (T c>--
S
£100
*
1
! fc^ SETU EM TU IE (T CI-

^
-ts»?
CK 100
S
5
!
-T« I TEMPERA ruRE
.1^
(T C1- ^s
"1 ,
5 5
, *
\
v^^
> "s
§
!
\\ \ ^^. ? \S
»
( - -^ - —— — vv 10
:
"
I
*
§
i.
,
.
•0 10
COLLECTOR CURRENT (Itf
-
COLLECTOR CURRENT He) -A COLLECTOR CURRENT (l c l - A
Fig. 1 1 - Typical dc-beta characteristics Fig. 12 - Typical dc-beta characteristics Fig. 13 - Typical dc-beta characteristics for
for type 2N5783. for type 2N5786. type 2N5785.
160
POWER TRANSISTORS
2N5781-2N5786
CASE TEMPERATURE (T C )«25"C
-2 -4 -6 -8 -10 -2 -4 -6 -8
COLLECTOR-TO-EMITTER VOLTAGE (VCE f-V
92CS-2S943
Fig. 14 - Maximum operating areas for types 2N5781, 2N5782, and 2N5783.
CASE TEMPERATURE (Tc ) 25°C

4 6 8 IO 2
COLLECTOR-TO- EMITTER V0LTA6E (V CE ) -V
92CS- 23944
Fig. 15 - Maximum operating areas for types 2N5784, 2N5785, and 2NS786.
161
: :
POWER TRANSISTORS
2N5838-2N5840
Features
High-Voltage, High-Power Silicon N-P-N • Maximum sofe-area-of-operation curves
Power Transistor • Lew saturation voltages
For Switching and Linear Applications in Military, Industrial and Commercial Equipment
• High voltage ratings
V CER (s*s)= 375V(2N5840)
RCA 2N5838, 2N5839and 2N5840** are epitaxial silicon are especially suitable for use in inverters, deflection 300 V (2N5839)
n-p-n power transistors utilizing a multiple-emitter-site circuits, switching regulators, high-voltage bridge ampli- 275V(2H5838)
structure. These devices employ the popular JEDEC fiers, ignition circuits, and other high-voltage switching
TO-3 package; they differ mainly in voltage, current- applications. • High dissipation rating
gain, and Vc£(sat) ratings. P T » 100 W
** Formerly RCA D»v. types TA7513, TA7530, and TA7420
Featuring high breakdown voltage ratings and low-satu- respectively.
ration voltage values, the 2N5838, 2N5839 and 2N5840 TERMINAL DESIGNATIONS
MAXIMUM RATINGS, Abie/uw-MoxImum Vofuas;
2N5838 2N5839 2N5840 "TRANSISTOR DISSIPATION, E-
Pt:
*COLLEC TOR-TO-BASE
VOLTAGE, V CBO 275 300 375 V At case temperature up to 25°
COLLECTOR-TO-EMITTER SUS- At case temperatureaupto25 '
TAINING VOLTAGE: and Vce above 40 V See Fig. 5

250 275 350 At case temperatures above 25°
With reverse bias (VjjE) of and Vce «bove 40 V See Figs. 1 & 5
-1.5 V. VcEV(»us)A 275 300 375 'TEMPERATURE RANGE:
Operating (Junction)
Storage fts
resistance (Rgg) < 50 ft,
*PIN TEMPERATURE (During
VcER(»>») Soldering):
*EMITTER-TO-BASE At distances 2 1 /32 in.
VOLTAGE, VEBO (0.8 mm) from case for 10 s
*COLLECTOR CURRENT, Ic
Continuous In accordance wUh JBDECroalstrationdata format (J8-6, RDF-1).
Peak '
Shown as V CEX (aua) in JEDEC Rogiatration Data.
CONTINUOUS BASE CURRENT,

IB
ELECTRICAL CHARACTERISTICS, Cose T»mp*ratun (T c ) = 25°C
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2NS838 2N5839 2NS840 UNITS

Vdc A de
VCE V BE 'C >B Min. Max. Min. Max. Min. Max.
Collector-Cutoff Cuitent: 200 2 mA NOTE:CURRENT DERATING AT CONSTANT
With base open
'ceo 250
VOLTAGE APPLIES ONLY TO THE DISSIPATION-
•1
With base-emitter junction 265 1.5 5
290 -1.5
mA
reverse biased 'CEV
360 1.5
With base-emilter junction 265 1.5 8

'CEV mA
290 1.5
reverse biased, Tp=100°C T
c
100 °C
360 1.5
Emitter Cutoff Current -6 1 1 mA

'ebo
Collectorto-Emittei
a b k
Sustaining Voltage: V
CEO lsusf 0.2 251^ 275 350
With base open

V
With base-emitter junction b k k
V
CEX ,susP 1 5 O.l" 275 300 375
reverse biased 100 125 ISO 179 200
With external base-lo-emittei b b CASE TEMPERATURE IT C I 'C
V CERl susf 0.2* 275 300" 375
92SS-4072RI
resistance <R -
50. i
BE l
Emitter-to-Base Voltage V 6 6 6 V Fig. 1 Derating curves for all types.

EB0
lE = 0.02A
5 0.5
a 20 20 20
DC Forward-Current a 10 50 10 50
3 2
Transfer Ratio
*FE
2 3" 8 40
Baseto-Emittei 2" 0.2 2 2

V isal) V
Saturation Voltage
BE 3" 0.375 2
5 5 COLLECTOR-TO-EMITTER VOLTAGE (V ). 5
ce V
Collector-to-Emitter 2« 02 15 IS
V isati 3» V
Saturation Voltage CE 0375 1
,_ J
X " ">•
•
Output Capacitance:
Vcb = 10 V, f =1 MHz
ôbo 150 150 150 PF «- \ ft,
5jf:2.8 v&
Common
ao
Magnitude of 2:
Emitter. Small-Signal. Short
Circuit. Forward-Current
Transfer Ratio (f -
1 MHzi
w 10 02 5 5 5
1"
ga:
Oh.
on
1.3 E E a >ERA ORE
I
( r
Forward-Bias, e
™" v\
Second-Breakdown i
'S/o 40 2.5 25 25 A < \

Collector Current: \.
t = 1 s, nonrepet'tivn | 05
Second Breakdown' Energy
£>
(With base reverse biased) Es/. •4 0.45 0.45 045 ml
R = 50 n, L • 100 mH —A
B COLLECTOR CURRENT llc > 1XSS-
Thermal Resistance °C/W

R flJC 10 5 1.75 1.75 1.75
(Jurtction-to-Case) Fig. 2 - Typical normalized dc beta
* characteristics for all types.

In accordance with JEDEC registration data format (JS-6 b CAUTION: The sustaining voltages Vceo<»"»). VC€x( su$ )
and
a Pulsed; pulse duration = 350 us, Duty factor £ 2%. VCER( S >»). MUST NOT be measured on a curve tracer.
162
POWER TRANSISTORS
2N5838-2N5840
SWITCHING-TIME CHARACTERISTICS, At Case Temperature (Tc) - 2S°C
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2NSS38 2N5839 2N5S40 UNITS

V dc A dc
v Cc # Max. Typ. Max. Typ. Max. Typ.
'C s
200 i 0.375 3.0 1.0
Fait 2 0.2 1.5 0.35 1.5 0.35

>f 200 3 0.375 1.5 0.4
Fig. 3 - Typical saturation voltage
JEOEC legisbation data format (JS-6 RDF-1). • = shown. characteristics for all types.
accordance with B2 = value
'
In l i
0|

for all types.
O 10 20 30 40 SO
COLLECTOR-TO-EMITTER VOLTAGE (VCE 1— V
nn _ 4

4 6 8 2 4 6 8 |00 6 8 K)00 for all types.
|
COLLECTOR-TO -EMITTER VOLTAGE «V 1

CE
—V 92CS-I5905
Fig. 5 - Maximum operating areas for all types. CASE TEMPERATURE [T

c
» 25 # C
||«o
V CE „(•.•>
1
4*2540 v III f ,
'
»« MO 1
'
V CER (,u,)
X* 300
v CER Ul"' 49 VcE0'»«l
*. V CEO ltu«l _
jw" 2«0
EXTERNAL BASE-TO-EMITTER RESISTANCE!
Fig. 7 Collector-to-emitter sustaining

voltage characteristics for all
types.
163
POWER TRANSISTORS
2N5838-2N5840
0.12
CASE TEMPERATURE (Tc )«IOO°C REPETITION RATE • 100 Mt
COLLECTOR SUPPLY VOLTS IV CC > » 100
Oil
CASE TEMPERATURE ITC • 29*C I
OC BETA lh„l • 6 I2N58J8I

' -10 I2NSB39 S 2N5840I
- 0.1
[
B| *"'Bj
i
z
p 08
Cjo.or
0.06
0.05
1 A 4
COLLECTOR CURRENT (!<;)
Fig. 9 - Typical delay-time characteristic

for all types.
f
F EPETITION RATE 100 Hi
C OLLECTOR SUPPLY VOLTS tV cc > • 200
C ASE TEMPERATURE IT C • 25'C I it rtf"
c C BETA Ih.-I • 6 I2N583BI
- 10 (2N5639 a 2N3640I
I [
8,--'B 2
1
-
s
S 0.5-
' """100 4
10
(V^j) —V »2CS-I5»06
1000 COLLECTOR CURRENT IX C 1 —A
Fig. 10- Typical rise-time characteristic
Fig. 8 - Maximum operating areas for all types. for all types.
I 1
I
1 II 1 I I 1 I 1 1 I
""' "
OURATION S 20(>I
IREPETITION RATE • 100 Hi
PULSE DURATION £ 20pl
REPETITION RATE 10% Hi
|
1 COLLECTOR SUPPLY VOLTS (V cc l 20C COLLECTOR SUPPL

1 1 1 1 1 1 1 1 1 1 1 1 1 1
CASE TEMPERATURE (Tfl • 2»'C
lllll PC "ETA (»„) • S I2NSS38I OC BETA (H--I S I2N5B3SI
«. 5 1 1 1 1 1 1 1 1 1 1 1 1 I 1 1.
'"'
»«»»»B2N5640I
«. 0.5
•10 I2N5B39 B 2NSS401
i 1 88 l B2
111111111111m' I
£ 0.4
I I
y. 0.3
z 2 02
i
in
01
n
:
+Ft:
< 1 2 3 4
COLLECTOR CURRENT II/.I— A COLLECTOR. CURRENT II
C I—
Fig. 1 1 Typical storage-time characteristic Fig. 12 - Typical fall-time characteristic

164
A I - A
POWER TRANSISTORS
2N5869, 2N5870

Features:
Rugged Devices, Broadly Applicable
For Industrial and Commercial Use
Low saturation voltages.
Maximum safe-areas-of -operation curves
The RCA-2N5869 and 2N5870 are epitaxial- They differ in voltage ratings and in the
Hermetically sealed JEDEC
base silicon n-p-n transistors featuring high currents at which the parameters are con- TO-204MA package
gain at high current. These devices have a trolled.
High gain at high current
dissipation capability of 87.5 watts at case
Both of these devices are supplied in the Thermal-cycling rating curve
temperatures up to 25 C. JEDEC TO-204MA
steel hermetic package.
Applications:
2N5869 2N5870 Power-switching circuits

* v CEO 6° 80 V Solenoid drivers
* V CB0 60 80 V
* v EBO 5 5 V
* l
c 5 5 A
* 'CM 10 10 A TERMINAL DESIGNATIONS
* 'B
2 2 A
* PT
AtT c <25 C 87.5 87.5 W
AtT c >25°C derate linearly
* T stg Tj .
6! 200 °C
* TL
At distance 1/16 in. (1.58 mm) from case for 10s 250
JEOEC TO-204MA
16
8 "V*V 0.1 „, S 100
6 COLLECTOR-TO-EMITTER VOLTAGE IVCE*' *V
S«oo
< 4
^V,. /
^Jv
\ s III
^ » l 1 l
J_ „
V 3 200
CASE TEMPERATURE ITr l-l2S*C
H I \ ^
— 2 \ k.<*
CUR its 1IPPLV 8EL0V ys x*. I .2S/C
RAT zo v EO v\ \ g
A
X 5
£
ioo
80
u 8
 •
, ,
COLLECTOR EMITTER VOLTASE (V CE )-V NUMBER OF THERMAL CYCLES UN THOUSANDS)
t , cs . so|90 92CS-I9970RI COLLECTOR CURRENT (1^1 —
Fig. 1 — Maximum operating areas. 92CS- 19661
Fig. 2— Thermal-cycling rating chart. Fig. 3— Typical dc beta characteristics

for both types.
8 COLLECTOR-TO-EMITTER VOLTASC (VCE ) • 4V 1 2N9 161 2NS87C) 25-C %

CASE TEMPERATURE ITC ) • 25'C l
c /l B .|0
"c /l B .|0
? l
ei' B2
l
i 2
8 J
''AT
T-
8
J° C-
s '
* «r
fr V 1
*>J
"CCMO / —
i « 'f
i K*'*>v
u 4
X 2 I
< O'VCC-IOV"
*
I AT
e
l°
J$ e 'off). — >
3 ' 8
2N5869.2N5870
2 i 1 1 1
• 8 5 1 > < 1 1 ! 4 s
0.01 o.i i n r, ,
I s i « n 1
.
COLLECTOR CUMIENT(I C )— COLLECTOR CURRENT <!<;>— A 92C9- 30188

COLLECTOR CURRENT (
c )-A 92CS-30I89
MCS- MOM
Fig. 4 — Typical gain-bandwidth characteristics for Fig. 5— Turn-on-time characteristics. Fig. 6— Turn-off-time characteristics.
both types.
165
POWER TRANSISTORS
2N5869, 2N5870
Tg 25°C Unless Otherwise Specified
VOLTAGE CURRENT 2N5869 2N5870
CHARACTERISTIC Vdc A dc UNIT
V C E v B e 'c >B MIN. MAX. MIN. MAX.
60 1.5 0.1 -
'CEX
80 1.5 _ _ 0.1
itiA
Tc = 1 50°C 60 1.5 - - 2 -
80 1.5 : 2
30 - - - 0.5 -
'ceo mA
40 0.5
60 # - - - - 0.1 -
'CBO mA
l
E = 80* 0.1
- -5 - - 1 - 1 mA
'ebo
V CE0 (sus)b - - 0.1 60 - 80 - V
h FE a 4 0.3 35 35
4 - 1.5 - 20 100 20 100
4 5 4 4
VB Ea 4 - 1.5 - - 1.5 - 1.5 V

V BE (sat)a - - 5 1.25 - 2.5 - 2.5 V
V CE (sat)a - - 2 0.2 1 1
V
5 1.25 _ 2 : 2
10 - 0.25 - 4 - 4 - MHz
f = 1 MHz
h fe 4 - 0.25 - 20 - 20 -
f = 1.0 kHz
C ob V CB= 10 V - - - - - 150 - 150 pF
f = 1 kHz
- - 1.5 0.1 5C - 0.7 - 0.7

V MS
t V CC = 30V - - 1.5 0.1 5C - 1

- 1 Ais
s
- - 1.5 0.1 5C - 0.8 - 0.8 MS

»f
R 0jc - - - - - 2 - 2 °C/W

* V CB
a Pulsed; pulse width <300 tis, duty factor < 2%.
*> CAUTION: Sustaining voltage, Vqcq(sus), MUST NOT be measured on a curve tracer.
BASE-TO-EMITTER VOLTAGE (VBE )-V

92C5- 29005
Fig. 7 — Typical input characteristics for

both types.
166
I ' I
POWER TRANSISTORS
2N5871,2N5872, 2N5873, 2N5874

Rugged Devices, Broadly Applicable Features:
The RCA-2N5871 and 2N5872 are epitaxial- devices have a dissipation capability of 115 Maximum safe-areas-of -operation curves
base silicon p-n-p transistors featuring high watts at case temperature up to 25 C. Hermetically sealed JEDEC TO-3/
gain at high current. The RCA-2N5873 and TO-204MA package
They differ in voltage ratings and in the
2N5874 are epitaxial-base silicon n-p-n tran- High gain at high current
They may be used as complements to
sistors.
JEDEC Thermal-cycling rating curve
trolled. All are supplied in the steel
2N5871 and 2N5872, respectively. These
TO-204MA hermetic package.
Applications:
2N5871» 2N5872* Power-switching circuits
2N5873 2NS874 Solenoid drivers
60 80 V
60 80 V TERMINAL DESIGNATIONS
5 5 V
7 7 A
15 15 A
2 2 A
At T
c <25 C 115 115 W
At Tq > 25 C derate linearly W/°C
At distance 1/16 in. (1.58 mm) from case for 10 s °C

T J- Tstg 65 to 200 °c JEDEC TO-204MA
i
~c-is'e —
-
X *» i
u.
1. V
CE '
s^ 1
rJ"/5
<
1 6
T, 2O0»C
V^^ /!S?*
I
I
•
\ c*
X?<\
I
s
2
25«C
.
« 9 <
tv l[
'
X S
-55'C
fc< s
i
o:
CURVES APPLY BELOW R MED VCC o \

\\
S
S
»
z
3
\\\
1
\fa *A
£ *
u *
j
o
°
e
4
\\
^\ A
o
a.
10 n A;
fa
I
O
? l0
•
^
\ 8 •
4 I
, , ' .1 MUMUR 0P THERMAL CYCLES (IN THOUSANDS) 92CS-I9970M
2 •
COLLECTOR EMITTER VOLTA0E <VeI >— V 7 8 2 ' S 9 2 ft
2—
Mct-Mtn COLLECTOR CURRENT
Fig. 1 - Maximum operating areas Fig, ' Thermal-cycling rating chart. (
c )— A 92CS- 30211
for all types.
2N5871 and 2N5872.
— J-
1
Tj • 25'C
2 Tj - 2VC
—-iV»°*c
r 1
I 2 . i.e
2! •c
?. inn
U.
» 8- 5 U
19 2
t i'
>-
o r/U .«
Z -!IS'C •
"be (
* .itflc^'JV V8E
I o
> h" .J*.**
s
> ii^'V' > " vee*' ]*• I
o
ac
i id
K "*
10
TI /l .|0" V{ E <«at)ATI C />B
V 8C (»ot>A C B
S i r—-r— 1
T 1
8 !
COLLECTOR CURRENT
1
I
e )— A
1
Mcs . Mtlt
I it T
V I
COL LECTOR CUR

• • I
UN T IC>-»
2
MC8-
1
KMII
•7 ! » (
COLLECTOR CURRENT (Ic

s
) —A
> '
92CS-502H
«7
Fig. 4 — Typical dc beta characteristics for pjg m g_ Typical voltage characteristics for Fig. 6— Typical voltage characteristics for
2N5873 and 2N5874. 2N5871 and 2NS872. 2N5873 and 2N5874.
167
POWER TRANSISTORS
2N5871, 2N5872, 2N5873, 2N5874

ELECTRICAL CHARACTERISTICS, at Case Temperature z
Tj -2 •c
T c = 25°C Unless Otherwise, Specified VCC"' ov

"
'C"B
4
— -"-
VOLTAGE CURRENT 2N5871 # 2N5872* X
**<;-
-"""""
CHARACTERISTIC x
Vdc A dc 2N5873 2N5874 UNIT " 2
I
V C E V B E 'c <B MIN MAX. MIN. MAX. \' 1 *T V BE (off)- 5 V
"
'CEX 60 1.5 - - 0.25 - 8
6
80 1.5 _ 0.25 V^^
mA
Tc = 150°C 60 1.5 - - - 2 - ZN587I.2N5672 (PNP)
2
_ 2N58T3, 2N5874(NPN)
80 1.5 2 1e 2 9 4 6 7
- - COLLECTOR CURRENT (I c >— A

'
'CEO 30 - 0.5 - 9 , CS . J025
40 0.5
mA Fig. 7 — Typical turn-on-time for all types.
'CBO 60C - - 0.25 -

l
E = 80c _ : 0.25
mA
"EBO - -5 - - 1
- 1 mA
v CEO< sus >
b - 0.1 60 - 80 - V
h FE a 4 0.5 35 35
4 - 2.5 - 20 100 20 100
4 7.0 4 4
VB Ea 4 - 2.5 - - 1.5 - 1.5 V
V BE (sat)a - - 7 1.75 - 2.5 - 2.5 V
V CE (sat)a 4 0.4 - 1
- 1
_ : V
7 1.75 2 2
*T 10 - 0.25 - 4 - 4 - MHz
f = 1 MHz
h fe 4 - 0.5 - 20 - 20 - MCS-302U
COLLECTOR CURRENT ( £ c )-A
f = 1.0 kHz
C ob 2N5871-72 10C - - - - - Fig. 8— Typical turn-off-time for all types.
300 300
= MHz 2N5873-74 pF
f 1
250 250
*r
- - 2.5 0.25d - 0.7 - 0.7 Ids
t V CC = 30 V - - 2.5 0.25d - -
s 1 1 MS
tf
- - 2.5 0.25d - 0.8 - 0.8 Us
R 0JC - - - - 1.52 - 1.52 °C/W
• For p-n-p devices, voltage and current values are negative.
a Pulsed; pulse width < 300 ms, duty factor < 2%.
b CAUTION: Sustaining voltage, V CE0 (sus), MUST NOT be measured on a curve tracer.
c Vr R d D1 =
l "U
168
POWER TRANSISTORS
2N5875, 2N5876, 2N5877, 2N5878

Features:
Rugged Devices, Broadly Applicable
and Maximum safe-areas-of-operation curves
The RCA-2N5875 and 2N5876 are epitaxial- They differ in voltage ratings in
Hermetically sealed JEDEC TO-3/TO-204MA
base silicon p-n-p transistors featuring high currents at which the parameters are con-
package
gain at high current. The RCA-2N5877 and trolled. All are supplied in the steel
2N5878 are epitaxial -base silicon n-p-n tran- JEDEC TO-204MA hermetic package.
sistors.They may be used as complements to
2N5875 and 2N5876, respectively. These Applications:
devices have a compability of 150 watts at
case temperatures up to 25°C.
Solenoid drivers
MAXIMUM RATINGS, Absolute Values:
2N5875* 2N5876*
2N6877 2N5878
* v CEO 60 80 V
* v CB0 60 80 V
* v EB0 5 5 V
* 10 10 A
'c
* 20 20 A
'cm
* 4 4 A
'b
AtT c <25 C 150 150 W

AtT c >25°C derate linearly w/°c JEDEC TO-204MA
* T J' T stg 65 to 200 °c
* TL
At 1/16 in. (1.58 mm) from case for 10 s
•in accordance with JEDEC registration data.

* For p-n-p devices, voltage & current values are negative.
— i
V
$i
100
2
VC .,, V
|
• 2p
Yn W F*
1 •
M /e
M *
TC .2S •C
\ w s
*
* y
8
\
\ \
\ Vjfc
rv%,
r
III
S
U
i-
•
5 J l\ \ \ft. |
3
°
*
*
C JRVE ! APF LY BELOW R kTEO VCE0
2N5S7S.2N3877
2
u^-\- —fe- !
8
2NS«7«,2NSS7t
) 1 •
1
I 1
\\
c • in
l_j°_ , 1 \hV\ >? l|ft 1 j 1 l> 1
O 10
10
, IOO
COLLECTOR EMITTER VOLTME (Vce»-V MCS-WW4 NUMKR OF THERMAL CYCLES (IN THOUSANDS) „C,.„»T0„ COLLECTOR CURRENT (t c )-A «c»-SOI»S
— (Vq^-V. Fig. 3— Typical dc beta characteristics for

Fig. 1 Collector-emitter voltage Fig. 2— Thermal-cycling rating chart.
2N5875 and 2NS876.
169
A
POWER TRANSISTORS
2N5875, 2N5876, 2N5877, 2N5878

ELECTRICAL CHARACTERISTICS, at Cue Temperature T -2B°C I00O
•
C
Unlet* Othtrwtoe Spectf tod vjt .40v
TEST CONDITIONS
VOLTAGE CURRENT 2N5876*
LIMITS
2N51i7e*
r iê
k2°*
CHARACTERISTIC Vde Adc 2N5877 2N6C 78 UNITS

t «
VC E V BE Jfi. MIN. MAX. MIN. MAX. 9 *
»P
'
'CEX 60 1.5 - - 0.5 -
80 1.5
9-5 mA I t
'<
TC -150°C 60 1.5 - - - 5 - X K>
80 1.5 5 O.I
i i ' < * '.
COLLCCTO* CUMCNT I c )-* MCS-HIM
<CEO 30 - - - 1 - Fig. 4- Typical dc beta charactarlttics for
(
40 1
mA 2NB877 and 2N6878.
"CBO 60C - - - - 0.5 -

l
E -0 80C 0.5
mA
SB Tj-S»*C
ebo -5 -
l
E -0 1 1 mA
v CEO< $us b >
- - 0.2 60 - 80 - V V ac lM))ATI c /l B <IO
h FE a 4 1 35 35
1 1 1 1 1
V rt *TVce .4.0V ^
4 - 4 - 20 100 20 100
«
4 10 4 4 2 0.S
Vbe" 4 - 4 - - 1.5 - 1.5 V

V BE ($at)« - - 10 2.5 - 2.5 - 2.5 V
VCE {sat)« - 5 0.5 - 1 - 1
— ve
Ji-
10
V
2.5 3 3 a. *
COLLECTOR CURKCNT (I c l-A •2CS-JOII7
10 — 0.5 - 4 - 4 - MHz Fig. 5- Typical voltages for 2NB876 and 2N5876.

f = 1 MHz
h fe 4 - 1 - 20 20 -
f=1 kHz — ITT
.Tj •ZS'C
l
cob V CB =10V 1.2
2N5875-76 500 - 500 PF

f = 1 MHz 2N5877-78 300 300 M
1.0
- - 0.4d - - i*.
V 4 0.7 0.7 MS v M *w>*T <c" £
;
l - - 4 0.4*1 — 1.0 — 1.0 i»

>v
s v cc = 30 V jus
i
0.4
tf - - 4 0.4d - 0.8 - 0.8 /w
RflJC 1.17 - 1.17 °C/W

0.t
V C lC-»'c'"i"' .
* In accordance with JEDEC registration data. • For p-n-p devices, voltages and current values are negative.
"
1i iMH
COLLCCTO* CUMCNT <r C >-A
J
„e «-joi»i
H
• Pulsed;pulsewidth<300MS-dutycycle<2%. •> CAUTION: Sustaining voltage, V CE0 <sus), AK/S7"A70T
"CB be measured on a curve tracer. Fig. 6- Typical voltages for 2NS877 and 2NS878.
"I,
.VCC .K
• l
C /ll • 10
t
4
t
«!
^ V •>
*V
^>K*« s
'•"^ <"s
4
i
,J«_ — VN
,J *
s
2N3477,2NMT»<NPN)
0.1 1 1 1
< 4 t
1 ' 1
•tcs-aom COLLCCTOR CURRCNT (X C )—

Fig. 7 — Typical turn-on-time for all types.
Fig. 8— Typical turn-off-time for all types.
170
V • A
POWER TRANSISTORS
2N5879, 2N5880, 2N5881, 2N5882

Features:
Silicon N-P-N and P-N-P Epitaxial-Base High dissipation capability
High-Power Transistors Maximum safe-area-of-operation curves
Hermetically sealed JEDEC TO-3/
TO-204MA package
Rugged Devices, Broadly Applicable High gain at high current
For Industrial and Commercial Use Thermal-cycling rating curve
The RCA-2N5879 and 2N5880 are epitaxial- They differ in voltage ratings and in the
base silicon p-n-p transistors featuring high currents at which the parameters are con- Applications:
gain at high current. The RCA-2N5881 and trolled. All are supplied in the steel Series and shunt regulators
2N5882 are epitaxial-base silicon n-p-n tran- High-fidelity amplifiers
sistors. They may be used as complements to
JEDEC TO-204MA hermetic package.
2N5879 and 2N5880, respectively. These Solenoid drivers
devices have a dissipation capability of 160
watts at case temperatures up to 25°C.

2N5879* 2NS880*
2N5881 2N5882
* V CEO 60 80 V
* V CBO 60 80 V
* V EBO 5 5 V
15 15 A TERMINAL DESIGNATIONS
'c
;
* 30 30 A
'cm
* 5 5 A
'b
p-t
At Tc < 25°C 160 160 W
At Tc > 25° C derate linearly w/°c
* TJ< Tst °c
fl
At 1/16 in. (1.58 mm) from

case for 10 s
°C
JEDEC TO-204MA
* For p-n-p devices, voltage and current values are negative
100 8 T .'29«
c
6 '
100 VCE
-
o •
<
S^» .
i 2 »
- 10 - -lj.200 ^0
k?*^n
to
1
t ^St
Nfc
I
K .
^ *«0 •c
i .
- \
1 X f*^.
1
1
4
*
w
\ <
M
O
S
I
v ^h
3
Ckjo-
£ •
3
\\
4
°
«
4
— \\
\
\ \
C
>
O
2
\^ V ^ % O
t t •
ZNM7»,ZNM«I
2NSM0.2NSM2—
n 2
'_
6
'ill
10 k\ •*•
4 1 ill, 2
8
2 1 1 1 1 2
COLLECTOR EMITTER VOLTAGE (
cc )-V •2CS-30202 OF THERMALCVCLES (IN THOUSANDS) l9 gram
ttcI .
COLLECTOR CURRENT ( I )— •2CS-30204
- Maximum operating araas for all types. Fig. 2— Thermal-cycling rating chart.
Fig. 3 — Typical dc beta characteristics
Fig. 1
for 2N5879 and 2N5880.
171
POWER TRANSISTORS
2N5879, 2N5880, 2N5881, 2N5882
ELECTRICAL CHARACTERISTICS, At Case Temperature i4oo

e
Tc - 25°C Unless Otherwise Specified i «
S 4
TEST CONDITIONS LIMITS S
oc c
CHARACTERISTIC VOLTAGE CURRENT 2N5879* 2N5880* z "r^Slc

Vdc Adc 2N5881 2N5882
UNITS 8s
25 c
VCE v B e 'c 'B Min. Max. Min. Max. 1'°°-
8
u
60 1.5 — — — 0.5 - 1 «
>
'CEX 80 1.5 0.5 a
Tc = 150°C 60 1.5 - - 5 - mA $
£ 2
80 1.5 : 5 o
30 — — — 1
— 10
'CEO 40 1
mA < e 1 4 e 2
COLLECTOR CURRENT del—

'CBO 60c — — 0.5 — 92CS-30203
mA Fig. 4 — Typical dc beta characteristics

l
E =0 80c _ _ 0.5 for 2N5881 and 2NS882.
'ebo - -5 - - 1 - 1 mA
V CE0 (sus)b - - 0.2 60 - 80 - V
4 2 35 35
h FE a 4 - 6 - 20 100 20 100
4 15 4 4
V BE? 4 - 6 - - 1.5 - 1.5 V
V BE (sat)a - - 15 3.75 - 2.5 - 2.5 V z Tj.2S- c
— — 7 0.7 — — 1
V CE (sat)a
1
V /
f
15 3.75 4 4 16
f
T , f = 1 MHz 10 - 1 - 4 - 4 - MHz
h fe , f = 1 kHz 4 - 2 - 20 - 20 -
§ 12
Cob f = 1 MHz >
,
2N5879-80 10C - - - - 600 - 600

2N5881-82 10c 400 400
pF
<
5 as
o
>
__jîS^
!===%r*^4V
>
- - 6 0.6d - 0.7 - 0.7 /is
t
s
V CC =30V -
-
-
-
6 0.6d -
-
1
-
-
1 JUS
04
1
._/.«»»<> ^
6 0.6d 0.8 0.8 Ms O 3Jh < e 2 I B 2
r 0jc - - - - - 1.1 - 1.1 °C/W COLLECTOR CURRENT (I C )-A
92CS-3020S
*ln accordance with JEDEC registration data. Fig. 5 Typical voltage characteristics
*For p-n-p devices, voltage and current values are negative. lor 2N5879 and 2N5880.
fPulsed; pulse duration 300 ms, duty factor = 2%. ^
°CAUTION: Sustaining voltage, V CE q(sus), MUST NOT be measured on a curve tracer.
1
Vcc"30V 2 Tj-25'C
VCC .30V
1
6
i
c /i B -o
8 4 16
4.
6
^ V '
**
m Z
--.
**
^? w 1.2
•^
1 2 r i-
ui 8 ^ o ..o
J 0.1.
^ P •
•N.^
^^, ^»
> *
>
0.8 AT c' lB ^
"^^
3E <• »fl" S v
«. <:-'^ V
6
^^^ •f
-^ ^:.
r>* Mj
2N388I. 2NS8S2INPN)
\\ 2
2N5879, 2N58STKPNP)
0.4 \
AT " 8jlO___,
"V 2N988I. 2NS882INPN) VCE (»0l) lc
1 1 1
01
€ -1
. 4 • 8 i i 2 6 8 2 ( 2
COLLECTOR CURRENT (I )— COLLECTOR CURRENT (Z c )-»
92CS-30207 ,2es-j0208 COLLECTOR CURRENT <I c
r )—
92CS- 30206
Fig. 6— Typical turn-on time for all types. Fig. 7 — Typical turn-off time for all types. Fig. 8— Typical voltage characteristics
for 2NS881 and 2NS882.
172
POWER TRANSISTORS
2N5885, 2N5886
Features:
High-Current, High-Power, High-Speed N-P-N Specification for hpg and VQ E (sat) up to 25 A
Current gain bandwidth product
Power Transistors T » 4 MHz (min.) at 1 A
f

The RCA-2N5885 and 2Na886 are epitaxial- regulators, dc-to-dc converters, inverters, and
base silicon n-p-n transistors intended for a solenoid (hammer )/relay drivers.
90 mJ Eg/b characteristic
wide variety of high-power, high-current These devices differ in maximum voltage
applications, such as power-switching circuits, ratings. They are supplied in JEDEC TO-
driver and output stages for series and shunt 204MA hermetic steel packages.
MAXIMUM RATINGS, Absolute-Maximum Values: TERMINAL DESIGNATIONS

2N5885 2N5886
*V CB « 80 V
*V CEO (sus) 60 80 V
* v EBO 5 V
* 25 A
l
c
50 A
*'CM
7 5 A
•b •
-
'bm
15 A JEDEC TO-204MA
*PT
AtT c < 25°C 200 W
AtT c >25°C .... Derate linearly 1.15 W/°C
See Figs. 1 and 2
*Tstg ,Tj 65to200 °C
At distance > 1/32 in. (0.8 mm) from NOTE: CURRENT DERATING »T CONSTANT VOLTAOT ;
APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION

seating plane for 10 s max 230 °C AND I«/ b -L«IITED PORTION OF MAXIMUM-OPERAHN0
AREA-CURVES. 00 NOT 0ERATE THE SPECIFIED \»LUE
* In accordance with FOR lc »*X
JEDEC registration data format JS-6 RDF-1
s *5
25 SO 79 100 I2S ISO 175 200

CASE TEMPERATURE (Tc >— »C
Fig. 2- Derating curves for 2NS88S and 2NS886.
row;
* 4 f"«fT —I
o
* «5»c_ 3x,
i si:
Bioo-
b.
s
•
•
&>
1 4 V*\.
i z
•
\
I
COLLECTOR- TO- EMITTER VOLTAGE! VCE )-V £ !
O 1
92CS-29846 t « • I % 1 * I « • t
COLLECTOR CURRENT (X. c )—
Fig. 1 — Maximum operating areas for 2N5885 and 2N5886. MCS-2M45
Fig. 3— Typical dc beta characteristics as a func-

tion of collector current for 2NS88S and
2N5886.
173
POWER TRANSISTORS
2N5885, 2N5886
ELECTRICAL CHARACTERISTICS, At Case Temperature <TC)=2S°C

2N5885 2N5886 UNITS
TERISTIC Vdc Adc
V CE v Be 'c >B Min. Max. Min. Max.
60 a - 1
-
r
CBO 80 a 1
60 -1.5 1
'CEX 80 -1.5 _ _ 1
60 -1.5
mA
'CEX 10
COLLECTOR-TO-EMITTER SATURATION VOLTASE [vCE (Mt)J-V
T C =150°C 80 -1.5 _ _ 10
30 — 2 — Fig. 4 — Typical saturation voltage characteristics for
'ceo 40 2N5885 and 2N5886.
2
'ebo -5 - 1 - 1
COLLECTOR-TO-EMITTER VOLTASE (VCE )-4V |||||||||
30
4 3^ 35 35
hFE 4 10 b 20 100 20 100 lllllllllllllllllllffy
4 25 b 4 4
V CE0 (sus) 0.2 60 - 80 - J 20
p^jii
iH
%
Vbe 4 10 - 1.5 - 1.5 3 is
V BE (sat) 25 b 6.25 - 2.5 - 2.5

i
- - V u 10
Vîfrr^H
15^ 1.5 1 1 J
V CE (sat) fflrT lTrTrtfi
25 b 6.25 4 4 s
'S/b
t =1s 20 10 - 10 - A () 0.2 0.4 06 at 1 14 1.4
p BASE-TO-EMITTER VOLTAeEWejl-V
nonrep. MCS-2M4T
E S/b Fig. 5— Typical transfer characteristics for

2N5885 and 2N5886.
L= 125 //H, -1.5 10 6.25 - 6.25 -
R BE = 51 ft 1
•
COLLECTOR SUPPLY VOLTAGE Vfcc)"30V
mj ic/xs*io
L= 20mH, c ci-
3 90 - 90 - X
R BE = 100 J2 4
*
,,
h fe|
l
10 1 4 - 4 - I
'
f = 1 MHz
h fe So,
4 3 20 - 20 -
f = 1 kHz
•4
C bo
10 a - 500 - 500 pF
f =1 MHz s
2
10 1 0.7 0.7 i
v Cc =
10 1
c 1 1 (JS
OjOI
4 1
>KX
30 K^
10 1
c : 0.8 ; 0.8 COLLECTOR CURRENT <!<;)— »2CS-i
R 0jc 20 5 - 0.875 - 0.875 °e/w Fig. 6— Typical delay-time and rise-time

|
characteristics as a function of
In accordance with JEDEC registration data format JS-6 RDF-1 collector current for 2N5885
and2NS886.
bpulsed; pulse duration = 300 ps, duty factor = 1 .8%. COLLECTOR SUPPLY VOLTASE Vtacl-sov
1*1 -X*t
IC/Is-IO
CASE TEMPERATURE (Tc)-2S*C
>jt
V
-
1 *
s
i *
\
0.1
1 ! 1
K9 K»
COLLECTOR CURRENT — A •«•
Fig. 7 — Typical storage-time and fall-time

characteristics as a function of
collector current for 2NS888
and 2NS886.
174
— 1 T
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831

Silicon N-P-N and P-N-P Medium-Power Transistors
hQQtUfGS*
General-Purpose Types for Switching Applications 2N5954-2NS956 complements to 2N6372-2N6374
2N6465, 2N6466 complements to 2N6467, 2N6468
RCA-2N5954, -2N5955, and -2N5956 are Types 2NS954, 2N5955, and 2N5956 are
multiple-epitaxial p-n-p transistors. RCA- available with factory-attached heat radiators Maximum-safe-area-of -operation curves
2N6372, -2N6373, and -2N6374 are multi- .
as RCA types 40829, 40830, and 40831, Thermal-cycle ratings
ple-epitaxial n-p-n transistors. They are com- respectively. The other devices may be
plements to 2N5954, 2N5955, and 2N5956. obtained with heat radiators on special order.
Hermetically-sealed JEDEC TO-66 package
Radiator versions are intended for printed-
The RCA-2N6465 and 2N6466 are multiple- TERMINAL DESIGNATIONS
circuit-board applications, and differ electri-
epitaxial n-p-n transistors. They are comple-
cally from their basic counterparts only in
ments to the 2N6467, and 2N6468 multiple- ,
epitaxial p-n-p transistors. These devices

W up to 25° C ambient)
device dissipation (5.8
and thermal resistance (30°C/W max. at T^
differ in voltage ratings and in the currents
* 25°C).
at which the parameters are controlled.
All are supplied in the JEDEC TO-66 package.

it dec To-ee
2Ne372-2N8374. 2N«4e«-2Ne4ee
MAXIMUM RATINGS, Absolute4Aaximum Vdue$:
2IM8373 2N6372 2N6465 2N6466
N-P-N 2N8374
P-N-P 2NM66JT 2N59BB* 2N6964? 2N6467* 2N6468*
40831* 40829'
60 70 90 130
*VCB0
êexl*"*'
\ BB - -1.6 v, r be - 100 n 60 70 90 110 130
T* BE -ioon 46 85 86 105 125

(HEAT RADIATOR)
v CEO (« ut) *° 80 80 100 120
•VEBO 5 5 5 5 5 JEDEC TC-68 with HMt Rakkrtor
4082a. 40830. 40831
*I 6 6 4 4
C •
6
2 2 2 2
*'B •
2
*T
At Tc up to 25°C 40 40 40 40 40 w
(2N6374) (2N6373) (2N6372)
(2N6966I (2N6966) (2N5954)
At T A up to 25°C 5JB SB SB W
(40831) (40830) (40829)
Q
At Tc above 25°C -Derate linearly to 200 C
^TrtQ -85 to +200 ZZ °c
> 1/32 (0B mm) from

At distances
—ting plane for 10 s
in.
max ^— +235 °c
*JEDEC types in accordance with JEDEC registration data format JS-6-ROF-2.
*For p-n-p devices, voltage and current values ara negative.
CASE OB AMBIEMT TEMPERATURE (

c OR TA )— »C
Fig. 1 - Dissipation derating chart for all types.
»LLECTOR-TO- EMITTER VOLTAM IVct)»«V-U-| 1 II 1 111 11
1 no
2*0
if
M
- 7»yf
ll
ifll
W\\\\\\ \\\\\\\wM
"Am 1
1 1
11
1 1 1
1111
1 It inTTf II
llllllllllll
1 HH
NUMRER or THERMAL CTCLM

'
— ill fflr"^ 1
EASE- TO- EMITTER V0LTA0E(V it l-V

I.S
•tLS-S»MI
COLLECTOR-TO-EMITTER VOLTAOE (VCEl —V
Fig. 3- Typical input characteristics for Fig. 4 - Typical output characteristics for
Fig. 2 Thermal-cycling rating chart for
2N59S4-56, 2N6372-74 and 2N5954-56, 2N6372-74 and
all types.
40829-31* 40829-31*
*For p-n-p devices, voltage and current values are negative.
175
*J
« *^
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) * 2S°C unless otherwise specified CaOECTOft-TO-EMITTCII VOlTtOC IV «-! 4V II
Hill Ml
TEST CONDITIONS* LIMITS U

VOLTAGE CURREN1 2N6373 2N6372 N
CHARACTERISTIC Vdc Adc 1115* 2N5955+ 2N5954* .» I
:
j4p? -ft
40830+ 40829+ u 4
T - ^/Ht
V C E vbe •c >B Min. Max. Min. Max. Min. Max. S 5
,;/ |/|
'CER 35
-
100
- -
!
&
*
5
R BE =ioon 55 100 JUA
I*-
75 100
1
'CEX 45 -1.5 — 100

R BE =100ft 65 -1.5 - 100 - MA
85 -1.5 100 MSE-TO-EMITTER VOLTaOE (V re ) —V
92LS- 992SRI
R BE =100U 45 -1.5 - 2 Fig. 5- Typical transfer characteristics for

TC =150°C 65 -1.5 - 2 - mA 2N5954-56, 2N6372-74 and
85 -1.5 2 40829-31*
25 1 —
'CEO 45 - - 1 mA
65 1 "Ei '
1 1
>EBO -5 - 0.1 - 0.1 - 0.1 mA S

f2'^.l
5 • ._M;e S slc
4 3a 20 100 juKXH
4 2.5a 20 100 2 !
hFE 4 2a 20 100
<
4 6a 5 5 5 S .
V CE0 <sus) 0.1a 40b - 60b - 80b - 1

*>
ID
•
s •
V CER (sus)
R BE =100fi 0.1a 45b 65b 85b
V CEX (sus) V 1
R BE =100ft -1.5 0.1a 50b _ 70b _ 90b _ COLLECTOft CURRENT (I c )—

92CS-26MI
vbe Fig. 6 - Typical dc beta characteristics for

All types 4 3a 2 - 2N6467 and 2N6468.
All types 4 2.5a - 2 -
All types 4 2a 2
V
2N6372-2N6374 4 6a 3 3 3 -4V
VOLTMi (Vcc)
33 0.3 1 II
V CE (sat) 2.5a -' - -
5 400 c*» jJCUPCIWTUI 1
0.25 1 V ^Si, ^L
2a 0.2 1
2N5954-2N5956 6 1.2 2 2 2 iPS
hfe|
f=1 MHz = -40"<5 s1 V
1
2N6372-2N6374 4 4 - - - X,
1 4 4
h fe
2N5954-56.40829-31 -4 -1 5 5 5
r
8
^^
f=1 kHz 4 0.5 25 25 25
10
-0.01
J J
'
J ri
-0.1
J J a
-t
— J
^
-K
R 0JC COUfCTD* C UHMUT (IeJ-4
ttci-ieooe
2N5954-56, - 4.3 - 4.3 - 4.3 Fig. 7 - Typical dc beta characteristics for
2N6372-74
2N5954-2N5956 and 40829-40831.
R 0JA °C/W
40829-40831 - 3o - 30 . 30
COLLtXTOR-TO-ttRTTeR VOLTMC (Veil ' 4V
In accordance with JEOEC registration data format JS-6 RDF-2 for JEDEC (2N5954-2NS956 I*00
2N6372-2N6374 2N6465-2N6468 40829-40931 ) types. 1 M
CASE TEHKfUTURCIT
« 200 C ).I2S»C
a Pulsed, pulse duration = ^9*C
300 /is, duty factor = 1 £%. I 100
b CAUTION: so s
Sustaining voltages VC£0 (sus), VCER (sus),and V
CEX (sus) MUST NOT be measured
S
1. «° _, -40«C
^«
sv
on a curve tracer. «•
vS.
1 *°
N
§
M ^^ is
s
^^
s v
a i a a
COLLECTOR CURRENT (I c >—

•2CS-IS66SRI
Fig. 8- Typical dc beta characteristics for

For p-n-p devices, voltage and current value* are negative. 2N6372-2N6374.
176
A V "
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC)=2S°C COLLI
1 1 1 1 1
unless otherwise specified
TEST CONDITIONS LIMITS li^r^Tl 25 -C -*
VOLTAGE CURRENT 2N6465 2N6486 UNITS

CHARACTERISTIC
Vdc Adc 2N6467* 2N6468+
V C E v B e c >B Min. Max. Min. Max.
95 - 100 -
'CER MA
R BE = ioon 100 100
100 -1.5 — 100 8

'CEX ma B 8
R BE = ioon 120 -1.5 _ 100 COLLECTOR CURRENT drl —
R BE = 100ft, 100 -1.5 2

— _ mA Fig. 9- Typical dc beta characteristics for
T C =150°C 120 -1.5 2
-
2N6465 and 2N6466.
50 - 1
'ceo : mA
60 1
COLLECTOR TO EMITTER VOLTAGE (VCE |. 4V
-5 - 0.1 - 0.1 mA i
20
'ebo a
1 "
4 1.5a 15 150 15 150 £ 16
*FE 4 4a 5 5
s »
V CE0 (sus) 0.1a 100b - 120b - 1 .
V CER (sus) »
R BE = 100J2 0.1a 105b _ 125b _ i

<
*
V f 6
X
V CEX (sus) 3 «
R BE = ioon -1.5 0.1a 110b _ 130b _ 2
4 1.5a - 2 •
2 '
vBe 4a _ V COLLECTOR CURRENT ll c ) —A

4 3.5 3.5
All types 1.5a 0.15 1.2 1.2 Fig. 10- typical gain-bandwidth product for
V CE (sat) 2N6465-2N6466 4a 0.8 3* - 3* V 2N59S4-56, 2N6372-74, 2N6467-68,
2N6467-2N6468 -4a -0.8 _4* -4* and 40829-31. (For p-n-p devices,
voltage and current values are negative.)
Ihfel
f = 1 MHz 4 1 5 5
h fe
300 -If
f = 1 kHz 4 0.5 25 _ 25 _
-T
R 0JC - 4.3 - 4.3 °c/w

e zso wH*rnt
u
-200 :
?
* In accordance with JEDEC registration data 300 ms, duty factor = 1 .8%
a Pulsed, pulse duration =
£
format JS-6 RDF-2. b CAUTION: Sustaining voltages V q(sus), V « ISO rS
CE CEfj(sus), |
For p-n-p devices, voltage and current values and Vqpy(sus) MUST NOT be measured on a curve tracer.
are negative. S ioo
so
BASE-TO- EMITTER VOLTAGE (V BEI—

92CS-223S2
Fig. 1 1 - Typical input characteristics for

2N6465 and 2N6466.
•
- CMC TEMPERATURE (T C )-29*C
i »
7
*
I? *""*:
iCU MEN LiiSiiirf
1 1 1 1 ffr
•
111 Hill IItHtt'* 8
I , i< i;JJ 40 W(-[--
ISO!
1
-
e
:ioo
*S :
j
\
S "
COLL ECTOR - T0-£ MM TE R VOLTA 0EIVCE 4V
CAS TEMPE RAT JRE 11 C»'25't
s
8
|
i
8 • 2
COLLECTOR CURRENT (I c l-A , K s-2 M *
Typical input characteristics for Fig. 13 - Typical gain-bandwidth product Fig. 14 - Typical output characteristics for
Fig. 12 -
2N6467 and 2N6468. for 2N6465 and 2N6466. 2N6465 and 2N6466.
177
V V V
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831
4 5.8 B 2 31.3 40 6 8
COLLECTOR-TO-EMITTER VOLTAGE (VC e>— V 10 ICO
»SCS-2«S43 COLLECTOR-TO-EMITTER VOLTAGE (VC E>—
92CS- 26838
Fig. 15 • Maximum operating areas for 2NS954-56, 2N6372-74,
Fig. 16 - Maximum operating areas for 2N646S and 2N6466.
and 40829-31*
-2 -4 -6 -8 -0 -12 -14
COLLECTOR-TO-EMITTER VOLTAGE <VC E>—

2N6467 and 2N6468.
6 8 -I20 2
-I -K> -30 tIOO
CQLLECTOR-TO-EMITTER VOLTAGE (VC E>—
92CS-26560
Fig. 17- Maximum operating areas for 2N6467 and 2N6468.
BASE-TO-EMITTER VOLTAGE (VbeI— V

92CS-26S66
For p-n-p devices, voltage and current Fig. 19 - Typical transfer characteristics
values are negative.
for 2N6467 and 2N6468.
178
V
' l
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831

COLLECTOR SUPPLYVOLTAGE (V CC )--30V
~r
l
:::t j
COLLECTOR- TO- EM TTER «PLTAG l»CE . 4v E TEMPERATURE (T |.28*C
C
* •I c "0
<
-!
r
[X ::fr
'
«r+H i
ll i
"t-^-fX
i « 'TTtf
</*! -14|
"*fr
° 3 ?fn
ft*
|
Wf
i
COLLECTOR CURRENT —A
BASE-TO-EMITTER VOLTAGE(VB£ l — COLLECTOR CURRENT II C ) —A ~-™» (
c )
92CS-??9!
F/'flr. 20 - Typical transfer characteristics Fig. 21 - Typical saturated switching Fig. 22- Typical saturated switching
for 2N6465 and 2N6466. characteristics for 2N5954-S6 characteristics for 2N6372-
and 40829-31. 2N6374.
COLLECTOR SUPPLY VOLTAGE (VcCl'SOVf Hi ::;:

COLLECTOR SUPPLY GE (V cc )>-30V
CASE TEMPERATURE (TC )-25«C f •Fit: CASE TEMPERATURE (T
C> 25-C
I B |-lB2'IC/IO f 12
jtj 3»
\ 2.5 1
+ -J-.,- ..-
1
HH^h Ht
h
I 2
:H
Tfn>K^»
.|ij|:
I TU "tsJV.,— Ilii:
x 1.5 "*-OFF £- § 06
?E3 Tm+CJ2 gisgife. K&ff ^rrt iiii 411;-
i * 04 ITt+S^
i
*> "th
IN-ONT MEl'OH'LLL "
9*1 r™ ru ff
0.5 zt:
-»-("-
H *
I
-
^Sft ***
4
illllllllinr.TVr
2
t
COLLECTOR CURRENT (I{>)— A COLLECTOR CURRENT dc) —A
F/gr. 23- Typical saturated switching Fig. 24 - Typical saturated switching
characteristics for 2N6465 characteristics for 2N6467

and 2N6466. and2N6468.
179
POWER TRANSISTORS
2N6032, 2N6033
High-Current, High-Speed, High-Power Transistors
Silicon N-P-IM Types Features:
For Switching and Amplifier Applications Low VcE(sat) - 1.0 V max. at 40 A, 1.3 V max. at 50 A
in Military, Industrial, and Commercial Equipment Maximum Safe-Area-of -Operation Curve. Ig/b limit line beginning at 24 V . .
Fast Storage Time t, - 1.5 lis max at lc = 40 A (2N6033) 50A (2N6032)

. . .
High-Current Capability . . . VcE<<*t> & VfjE measured at lc - 40 A (2N6033)

RCA Types 2N6032 and 2N6033* are epitaxial silicon
-50 A (2N6032)
n-p-n transistors having high-current and high-power handling
High Pj (140 W max. atTc-25°C)
capability and fast switching speed. The 2N6033 is similar to
the 2N6032; they differ in maximum values for continuous MAXIMUM RATINGS, Absolute Maximum Values:
collector current and sustaining voltage. 2N6032 2N6033
They • COLLECTOR-TO-BASE VOLTAGE . . V CB0 120 150 V
are supplied in modified TO-3 hermetic steel packages TERMINAL DESIGNATIONS
with 0.60-in. diameter pins.
COLLECTOR-TO-EMITTER
SUSTAINING VOLTAGE:
"Formerly RCA Dm. Types TA7337 and TA7337A, respectively. With base open V CE0 (sus) 90 120 V C
(FLANGE)
resistance (R
BE )< 50f2 VCER (sus) 110 140 V
Applications: • With external base-to-emitter
<Rbe'< 50
resistance ^*
Switching-control amplifiers
V BE =I 5 v V CEX (sus) 120 150 V
Power gates
Switching regulators
• EMITTER-TO-BASE VOLTAGE V £B0 7 7 V
• CONTINUOUS COLLECTOR CURRENT ^ 50 40 A
Power oscillators
« BASE CURRENT I 10 A
B )
Modified JEDEC TO-3
DC-RF amplifiers
• IEMITTER CURRENT I
E 50 40 A
• TRANSISTOR DISSIPATION: pT
* Converters
At case temperatures up to 25°C
Inverters
and Vf.£ up to 24 V 140 140 W
Control circuits
At case temperatures above 25 C Derate linearly to 200°C
TEMPERATURE RANGE:
Storage & Operating (Junction) ... -65 to +200 °C
At distances > 1/32 in. (0.8 mm)
from seating plane for 10 s max ... 230
140 COLLECTOR-TO-EMITTER VOLTAGE (V
c e)'2 •» V 1 1
IC-SOA
*ln accordance with JEDEC registration data format JS-6 RDF-1. MAX ^
£
M
120
o
Vic -40 A
i 100
U2N6033)
V. 9-
| eo At
f i
P
"
1
n in
j J"
•c
1
s o
• l S I 1 * • «
COLLECTOR CURRENT (I c )—
•2CS-II
Fig. 2 - Typical dc-beta characteristics

for both types.
COLLECTOR-TO-EMITTER VOLTAGE (VC E>- 2 V 1 1 1 1 1 1 1 1 Ijj" -
60
-144+ i
+4444. -
I a.
5 40
i ^rUfrn
30 1 1 1 1 1 1 1 I-P3
s
J 20
8
10
wtgi
mm
3.6 08 I 12 1.4 16 18

for both types.
COLLECTOR-TO-EMITTER VOLTAGE (VCE )— V

92CS-I6020RI
Fig. 1 - Maximum operating areas for both types.
180
POWER TRANSISTORS
2N6032, 2N6033
ELECTRICAL CHARACTERISTICS, Case Temperature (Trj) - 2S°C Unless Otherwise Specified CASE TEMPERATURE (Tc )-25

TTTTTT"
90
\\\\\\\\A U*TI
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N6032 2N6033 UNITS ^» | | | | 1 |
|
-
V dc A dc
riiili'T
VCE" v B e c 'B vlin. Max. Win Max. i 30
'CEO 80 - - - 10 - 10 mA 3 20
SASE CURfl ENTCIbI -0.29
With base open -1 L^nLsrT*TT III 1
11 -
1
? |
1
| 1 I II I
u 10
Witn base-emitter 110 -1.5 - - - 12 -
mA t
junction reverse biased 135 -1.5 10
'CEV
TC = 150°C 100 -1.5 _ - - 15 _ 10 mA COLLECTOR-TO-EMITTER VOLTAGE (V(; E I —

" -7 - - 10 - 10 mA Fig. 4 - Typical output characteristics
Collector-to-Emitter for both types.
Sustaining Voltage: b
V CE0 (sus) " - 0.2 90 a - 120 a - """
(See Figs. 12 & 131 COLLECTOR-TO-EMITTER VOLTAGE IVffl-gvhH
—
II
1 1 1 1 1 1 1
'
With base open 6

1 1 1 1 1 1 1 1 j 1 1 1 1 1 1 1 1 1 1 I 1 1 1
1
\i,~"
With external base to emitter " " b 110 a - 140 a - V
V CER (sus) 0.2
1+ +
resistance (R BE ) < 50 Q '
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
1
I
With base-emitter junction reverse V CEX (susl - -15 2b 120 a - 150 a -
- 4
biased & R BE <50H
_ _ 50b 5 2 -
Base-to-Emitter Saturation Voltage V BE (sat) V 1 »
40 b 4 _ 2
2 - 50 b - 2 ~ * 2
Base-to-Emitter Voltage VBE V ttpfflffl
2 40 b : 2
50b 5 1.3 IMJ^yiini i
Collector to-Emitter
Saturation Voltage
V CE (sat) - - 40 b 4 - - 1
V
lllbu»
0.2 0.4 06 OS I
•25-cl-H-l
1.2
1
1.4
1 1 1 1 1
1-6
1 Iff
I.S
2.6 50 b " 10 50 BASE -TO-EMITTER VOLTAGE IVgEl—V

DC Forward-Current Transfer Ratio h
FE 2 _ 40 b 10 50
92CS-IT4S0
Fig. 5 - Typical input characteristics

Second-Breakdown Collector Current 24 5.8 C 5.8 C
-
A for both types.
With base forward biased , t = 1 s 's/b 40 - - : 9c - 0.9 C
non repetitive CASE TEMPERATURE ITC |.25"C
SERIES BASE RESISTANCE IR BE I-Sa
Second -Break down Energy
With base reverse biased
(L = 310>iH. R BE = 5J2I
E S/b - -4 20 - 62 - 62 - mj
V A«
Magnitude of common-emitter z IS
small-signal, short-circuit,
forward-current transfer ratio
M 10 2 10 - 10 -
8 io
5\
f = 5 MH7 %
f = 5 MHz
<T 10 " 2 - 50 - 50 - MHz i
5
% ^-^
I
Output Capacitance: - - - " - 800 - 800 pF
ôbo
V C B = 10 V, f - 1 MHz 1
Thermal Resistance
R0JC 10 - 10 - - 1.25 - 1.25 °C/W
(Junction to-Casel
Fig. 6 - Maximum reverse-bias second-
*ln accordance with JEDEC registration format JS-6 RDF-1. breakdown characteristics for
*CAUTION: The sustaining voltages V CEO lsusl, V CER (sus), and V CEX (sus) MUST NOT be measured c
b Pulsed: Pulse duration 300 fis; duty factor < 2%. both types.
CASE TEMPERATURE IT |. 25 »c
C
1
Z 140
3S ,3°
^°„
SWITCHING TIME CHARACTERISTICS, Case Temperature (Tc) = 25°C
"i
TEST CONDITIONS LIMITS 120
if
VCER MM)
V dc A dc ij"0
VCE VBE Min. Max. Min. Max.
Saturated Switching Time: (Vcc = 30V,

ic 
IB1 = lB2):
1U
Rise Time V - - 50 5 - 1
- »o .. * EO )
V* i
i r^~1 ~l ,n
40 4 1
EXTERNAL BASE-TO-EMITTER RESISTANCE (Rgjl—
Storage Time ts
- - 50 5 - 1.5
J« 92SS-»54RI
40 4 : 1.5
_ - 50 5 _ 0.5 _ Fig. 7 Collector-to-emitter sustaining
-
Fall Time tf MS
40 4 0.5 voltage characteristics for both
types.
181
POWER TRANSISTORS
2N6032, 2N6033
I
" " " 10 " " " 100
Fig. 8 - Maximum operating areas for both types at case temperature (Tq) ;
100°C.
100 CASE TEMPERATURE (TC ]-2S'C

COLLECTOR SUPPLY VOLTAGE (V
cc l . 30
i c -ioi B| --ioi B2 BASE -TO- EMITTER VOLTAGE 1V BE I--4V
1.6
""^^ I
4
NO CTANCEIL )>400MH
^^^
1.2 600
""*-<
T 1 4
2000
P o.a 3000
(J •
.122
0.4
ti
10 20 30 40 50 60 TO
COLLECTOR CURRENT II C I — SERIES BASE RESISTANCE (R BE > — <l
92CS- 17448
Fig. 10 Maximum reverse-bias second-

Fig. 9- Typical saturated switching breakdown characteristics for
characteristics for both types. both types.
182
POWER TRANSISTORS
2N6077-2N6079
Features:
High-Voltage, High-Power Silicon
N-P-N Transistors curves
For Switching and Linear Applications Low saturation voltages
RCA 2N6077, 2N6078 and 2N6079 are ratings make this device useful for switch-
V CER (sus) - 300 V (2N6077)
multiple epitaxial silicon n-p-n power ing regulators operating directly from a 275 V (2N6078)
transistors utilizing a multiple-emitter- rectified 1 10-V or 220-V power line. The
375 V (2N6079)
site structure. Multiple-epitaxial construc- unit is rated to take surge currents up to High dissipation rating: Pf 45 W
tion maximizes the volt-ampere charac- 5 A and maintain saturation.
teristic of the device and provides fast
switching speeds. Multiple-emitter-site de-
The 2N6079 is characterized for use in
sign ensures uniform current flow through-
inverters 'operating directly from a recti-
out the structure, which produces a high TERMINAL DESIGNATIONS
fied 110-V power line.The leakage cur-
'S/b anc a ar 9 e safe-operation area.
' '
rent is specified at 450 volts; therefore

These devices use the popular JEDEC the device can also be used in a series
TO-66 package; they differ mainly in vol- bridge configuration on a 220-V line. The
tage ratings, leakage-current limits, and V^BO ratin 9 of 9 volts eases requirements
VQg(sat) ratings. on the drive transformer in inverter appli-
cations. Storage time, an important factor

The 2N6077 is characterized for switching
in the frequency stability of an inverter,
applications with load lines in the active
is specified in Fig. 1 1 , which shows varia-
region. These applications include sweep
tion in storage time with variation in load
circuits and all circuits using the transistor
current from zero to maximum (4 A).
as an active voltage clamp.
Type 2N6078 is characterized for switch-

ing applications with the load line extend-
ing into the reverse-bias region. Its voltage
MAXIMUM RATINGS, Absolute-Maximum Values: 2N6077 2N6078 2N6079

•COLLECTOR-TO-BASE VOLTAGE V CB0 300 275 375
With bate open VcEo' <u*' 276 250 1 350
• With reverse bias (V BE ) of -1.5 V V CEX ($us) 300 275 375
With external base-to-emitter resistance (R(JE' ^ 500 n Vcer(*us) 300 275 375
•EMITTER-TO-BASE VOLTAGE V EB0 6 6 9
•COLLECTOR CURRENT: IC
Continuous 7 7 7
Peak : 10 10 10
•CONTINUOUS BASE CURRENT IB 4 4 4
At case temperatures up to 25°C 45 46 46
Storage & Operating (Junction) — -65 to +200 — °C
•PIN TEMPERATURE (During Soldering):
At distances > 1/32 in. (0.8 mm) from case for 10 s max. . . . 230 °C
• 2N-Series types in accordance with JEDEC registration data format (JS-6, RDM).
183
POWER TRANSISTORS
2N6077-2N6079
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C unless otherwise specified

CHARACTERISTIC VOLTAGE CURRENT
SYMBOL 2N6077 2N6078 2N6079 UNITS
V dc A dc
VCE V B E 'c >B Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
250 - - 2 - - - - - - mA
'ceo
250 -1.5 — — 5 — — 0.05 — —
mA
'CEV 450 -1.5 0.5
(T C = 125°C) 250 -1.5 - - 8 - - 0.2 - —

mA
450 -1.5 5
-6 — - 1
— — 1
— —
'ebo -9
mA
1
V CE0 (sus) 0.2

a
275 b - - 250 b - - 350 b - -
V
V CER (sus) - - - - - -
0.2
a
300 b 275 b 375 b
(R BE = 50012)
v v EB0
6 - - 6 - - 9 - - V
(l
E = 1 mA)
a
"FE 1 1.2 12 28 70 12 28 70 12 28 50
1.2' 0.2 1.0 1.6 1.0 1.6 1.0 1.6
3
a
0.6 - 1.2 1.9 - -
V BE (sat) 8 V
4 0.8 1.3 2
a
5 1 1.5 2
a
1.2 0.2 0.15 0.5 0.15 0.5 0.15 0.5
3
s
0.6 - 0.25 1
- -
V CE (sat) a V
4 0.8 0.5 3
a
5 1 0.8 3
c obo pF
- - 150 - - 150 - - 150
(VCB =10V, f = 1MHz)
Ihfel - - -
10 0.2 1 7 1 7 1 7
(f = 1 MHz)
's/b
(Pulse duration (non- 50 0.9 - - 0.9 - - 0.9 - - A
repetitive) = 1 s)
E S/b
-4 3* 0.45 - - 0.45 - - 0.45 - - mj
(R B = 50n, L=100juH)
t
d
°
1.2 0.2 - 0.02 - - 0.02 - - 0.02 -
tr
C
1.2 0.2 - 0.3 0.75 - 0.3 0.75 - 0.3 0.75
Ms
ts° 1.2 0.2 - 2.8 5 - 2.8 5 - 2.8 5
tf
c
1.2 0.2 - 0.3 0.75 - 0.3 0.75 - 0.3 0.75
R 0JC 20 2.25 - - 3.9 - - 3.9 - - 3.9 °C/W
*2N-series types in accordance with JEDEC registration data format (JS-6, RDF-1).
a
Pulsed; pulse duration < 350 jus, Duty factor = 2%.
b
CAUTION: The sustaining voltages Vc E q(sus), ancl V CER' SUS MUST NOT
'' be measured on a curve tracer.
C
V CC = 250V, l
B1 = B2 l .
184
V ' 1 1
POWER TRANSISTORS
2N6077-2N6079
1
PULSE MIRATION 3 5 COLLECTOR -TO- EMITTER VO ™0Elv CE |.|.0vl 96
,_ 3
'
1
''
!
i i
L '
'J ! !
|
84
.
:
| ! 1-
70
=>t
CASE TEMPERATURE
56|k
!'j
f __ iN
'
-55*C
• i
2syf
Vj
j
5
1 °
4
i II
a
1 A± 2
COLLECTOR CURRENT llr
F/'p. 2 - Typical normalized dc beta

3 5 COLLECTOR -TO-E MITTER VOLTAGE 1

'CE>" ~r
! |
1- ^TNl !
5^
i
75
CASE TEMPERATURE^
I TC ) • 2V_C_ 1°
2
II
— s
s
i
60
4 'oS
1
-55*C
\^-——
30 3£
a
O 0-3 15
COLLECTOR CURRENT Ur
>0 100 1900 Fig. 3 - Typical normalized dc beta
COULCCTOR-TO-CMITTM VOLTAOC <V
CE »
—V characteristics for all types.
»2C»-lt022
Note (Figs. 2 & 3): To estimate mm., max. hpg at any current and
temperature, read normalized dc forward-current transler ratio and
Fig. 1 - Maximum operating areas for all types.
multiply by mm., max. specifications given in Electrical Character-
istics Chart.
liMlMmli^ COLLECTOR-TO-EMITTER VOLTAGE IVcj) 5 V [[ 1 1 1 1 1 1 H
5
£<Cv' [TTI
. 'N 1
J s> 1 1 1 II mil -
*
^ 1 1 ! 1 1 i i 1 1 1 1 1 1
-
IH fr°|
W*
-
flf III 5
:li:ffi
y*\
K
ft jt|[t -s it"
I i |{t|ji
Tilr 1
il^ll^
'
l/mlilfUIIH -
0.5 1 i S 8
BASE-TO-EMITTER VOLTAGE!
I .
5
(J |ip=S ^B||rjK "frffljpnT^j^^ |
; InJofni \\: HI tMla Fig. 5 - Typical transfer characteristics
= lSill for all types.
s
go.i EEpHEgi
liiiS
iiiTnTn M M4.TWM M i-^tl^^^^^m

468 1 1 1
10
1 1
100
1 1 IliitnTtTttttttiH^^fiFTtt'l'ttttl
2 4 • 8
1 1 1 1 1 1 1 i
2
J ll
COLLtCTOH-fd-tMITTtH VOLTAOE <V ct ) —

I
Fig. 6 • Typical saturation voltage
185
V V
POWER TRANSISTORS
2N6077-2N6079
,036 TEMPERATURE 1 Tc 1 . 25* ch:i FTTT POLK DURATION S 20,.
REPETITION RATE -ICO Hz
6
g|: COLLECTOR SUPPLY VOLTAGE (Vce l'250vt
"Flim -it '|HH|

F"H: CASE TEMPERATURE (Tc 2J'C
I »|-I
I
»Z
7
' f--S[ _o» j:
iff"
*
4 Tr
t+S:
i
iO-»:
• 3
Hffff T f "
)'0-'».
ASECU RRENJUj
j 2
M
-
--M- 1
&fi Tf fttf
Li w-
12 til
3
(Mill
4 5 6 7 6
COLLECTOR-TO-EMITTER VOLTAGE (
CE 1 —V tac»-c»OH
COLLECTOR CURRENT CTC 1-
Fig. 7- Typical output characteristics Fig. 8 - Typical storage-time characteristics Fig. 9 - Typical rise-time characteristic
for all types. for all types (with constant forced for all types.
gain).
0.12
CASE TEMPERATURE (Tc 1 129 'C |
[ | | [ | | | j j ^~f~
- PULSE DURATION i 20 pi I
;
i
i-
REPET
^REPETITION RATE- 100 Hi CTOR SUPPLY VOLTAGE IVccI- 250V
iaJ -j COLLECTOR SUPPLT VOLTAGE (VCC I'250V Oil
CASE
CASE TEMPERATURE T c > 2S*C 1
DC BETA (h FE 5 THROUGH
> 10
7
- s
: so
4
i
«
HnI nW \
1
0.1
'e,
1
b2
o\ 1 1 | | 1 1 1 ) | j j | |
-t-j- i i 1 i
J 4 Villi H4
IrJ 1 1 ft" Tr T
111 1
1
* k 1 i
--*-+
f
1
: 2d z j
;
" J .—-
8
-+U+ -!-.--!•
<»*' l tM T|' I |'|'|

8
Um][iX|4f|tt IaSE
i |
i?
2 ! JJ0.07
«J I
1 0.06
0.05 '
4
COLLECTOR-TO-EMITTER VOLTAGE (VCEI— MCS-I COLLECTOR CURRENT (I c l-A COLLECTOR CURRENT 1 !<; I
Fig. 10- Typical output characteristics Fig. 1 1 - Typical storage-time characteristics Fig. 12 - Typical delay-time characteristic
for all types. for all types (with constant-base for all types.
drives).
COLLECTOR CURRENT (I c l —A
Fig. 13 - Typical fall-time characteristic
for all types.
186.
: : V
POWER TRANSISTORS
2N6098-2N6103, RCA3055
High-Current Silicon N-P-N VERSAWATT Transistor
Features:
Designed for Medium-Power Linear and Switching Service
in Consumer, Automotive, and Industrial Applications Low saturation voltage -
V CE (sat) = 1 V
max. at c = 4 A l
These RCA types are hometaxial-base variety of medium-power switching and (2N6098, 2N6099)
n-p-n transistors. Types 2N6098,
silicon linear applications, such as series and = 1 V max. at = 5 A l
c
2N6100, and 2N6102 have formed emit- shunt regulators, solenoid drivers, motor- (2N6100, 2N6101)
ter and base leads for easy insertion into speed controls, inverters, and driver and = 1 V max. at = 8 A l
c
TO-66 sockets. Types 2N6099, 2N6101, output stages of high-fidelity amplifiers. (2N6102, 2N6103)
and 2N6103 are electrically identical to
OPTIONAL LEAD CONFIGURATION VERSAWATT package (moided-
the 2N6098, 2N6100, and 2N6102, re- silicone plastic)
An additional lead forming for printed-
spectively. Maximum safe-area-of-operation curves
circuit board mounting is also available.
Thermal-cycle rating curve
These new VERSAWATT package transis- Please submit requirements to your RCA
tors differ in voltage ratings and in the Technical Sales Representative, or write TERMINAL DESIGNATIONS
currents at which the parameters are con- to RCAPower Marketing, Somerville,
trolled. They are intended for a wide N.J. 08876.
BOTTOM VIEW
92CS-275I9
MAXIMUM RATINGS, Absolute-Maximum Values: JEDEC TO-220AB

2N6099, 2N6101. 2N6103
•COLLECTOR-TO-BASE VOLTAGE V CB0
With external base-to-em.tter resistance (R b e) = 10012 ... V C er(sus)
yo
" With base open V(;r£o(sus)
With base reverse-biased V BE = -1.5V V CEV (susl 3
•EMITTER-TO-BASE VOLTAGE V EB0
•COLLECTOR CURRENT (Continuous) Ic (FLANGE)
•BASE CURRENT I
B
TRANSISTOR DISSIPATION: Pj BOTTOM VIEW
•
At case temperatures up
25°C to
At ambient temperatures up to 25°C
JEOE C TO-220A A
• At case temperatures above 25°C, derate linearly
2N6098, 2N610O, 2 «1 02
At ambient temperatures above 25°C, derate
linearly
ioo
e
—
•
LEAD TEMPERATURE
At distanced 1.8 in.
(During Soldering)
(3.17 mm) from case of 10sma«. *
^"T-
. . .
'
' 2N-Series types in accordance with JEDEC registration data format JS 6 RDF-2.
J.
Sa^ .
z 2
*
K;>&^
~:
tfCJRMALIÊD ÔWE* i
o FW t .
:$:t3 *SP
i
N
v \
\\
*
Zm^
\
i
'
i c MAx.(foNfiNu60"s) jr
<
0! 2
o \» \\
ô_A
VK/
\ No
(ZN6l02,2N6l05T t
1
\
\ Y ? f\
X c MKx.(hoNTINUOl|S):
1 l0 f
(2N609e |gNiBoW;
? JlJliSIQP, 2N4I0I Jj Fig. 2— Thermal-cycling rating for all types.
case temperature ncT*zpta isv ,
<€U«VE&lMy$TiB€ 0Et^Tk^^NBARt^S
WITH INCREASE IN TEMPERATURE) ^
*for sinIsle N5s«kpeTiti\?Ei pjuisc
Vceo MAX i4DV UN6ia2,2N6IC&)

VCfr MAiX»6pyl(2N6098,2N6099l-
VCE0 MAX i 7DV i(2N6IOD,2NJ3IOI> -
10
COLLECTOR-TO-EMITTER VOLTAGE (VC £) —
92CS-I79S4
MSt-TO-CWTTCIt VW.TMC tVgfl-V
WCS-MMT
Fig. 1 — Maximum safe operating areas for 2N6098-2N6103, inclusive. Fig. 3— Typical transfer characteristics for
all types.
.187
POWER TRANSISTORS
2N6098-2N6103, RCA3055
ELECTRICAL CHARACTERISTICS, Case Temperature (TCJ = 25° C Unless Otherwise Specified

RCA3055 UNITS
SYMBOL V dc Adc 2N6103 2N6099 2N6101
VC E v E b 'c »B MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
40 1.5 2
65 1.5 - 2 -
'CEX 75 1.5 - 2 -
100 1.5 5
mA
40 1.5 10
65 1.5 - 10 - -
'CEX
(T C =150°C) 75 1.5 - 10
100 1.5 30
30 2 0.7
'
50 - 2 - - mA
'ceo
60 : 2
5 1
7 - - - 5 mA
'ebo
8 1 1
V CER (sus) - - - 70 -
0.2 45 65 75
R BE-= 100fi a
V CE0 (sus) a 0.2 40 - 60 - 70 - 60 - V

v CEV< sus >
a
1.5 0.1 - - - - - - 90 -
4 4 20 80 20 70
4 5 20 80
8
hFE 4 8 15 60
4 10 5 5 5
4 16 5
4 4 ~ 1.7 1.8
Vbe
8
4 5 - - 1.7 - V
4 8 1.7
4 0.4 — — 1.1
V CE (sat) 8 10 2 2.5 2.5 - V

16 3.2 2.5
b
(t>ii) 60 - - - - - - 1.2 - A
's/b
f 4 1
- - - - - - 10 - kHz
hfe
h fe 4 f=1 kHz 0.5 15 - 15 - 15 - 15 120
|h fe 4 f=
|
Q1MHz 0.5 8 28 8 28 8 28 2 -
R 0JC - 1.67 - 1.67 1.67 1.67
°C/W
R 0JA 70 70 — 70 — 70
*2N-series types in accordance with JEDEC registration data format (JS-6, RDF-2)
"Pulsed, pulse duration = 300 /is, duty factor = 0.018
188
POWER TRANSISTORS
2N6098-2N6103, RCA3055
COLLECTOR-TO-EMITTER VOLTAGE (VfcE
CASE TEMPERATURE (Tr)-2S'C
1 1
1
£
i
i" 2 U^-
J*&^* ,R :,
Joss
I "
^
i
!"
* 04
COLLECTOR CURRENT (Ij)—
Fig. 5— Typical gain-bandwidth product for

all types.
CC.-ECTOR-TO-EMITTER VOLTAGE IVfcjl.4 V
2
S ioo
C
tf»
|.„ _^ |
"^
*•.
z 60 vy^=
!«*&*
lt>
V 40 J*
~£\
>
1- >
e
« 6 6 • 1
COLLECTOR CURRENT (!<.) -A JK

COLLECTOR-TO-EMITTER VOLTAGE (V CE )— V 92CS . 2I466 2N6098, 2N6099, and RCA3055.
Fig. 4 — Maxirpum operating areas for RCA3055.
COLLECTOR-TO-EMITTER VOLTAGE v MO COLLECTOR-TO-EMITTER VOLTAGE

(Vfcf)^ <\fc E >>< V
1
^'
HI
9 4f 1 '
|
"
P*
s
s" 100
wV
i bo - <£
•G
4 *•-».
1 W<*^ \\
*» k
P ife* ** 2f
> **
\
| 60
£*
^ *$r
v
i
" ~£
3
o « .&
1<
X \
'
S *°
N \
>. S N
S 20 S 20
11'
COLLECTOR CURRENT (It) — COLLECTOR CURRENT del — COLLECTOR CURRENT (!<;> —A

MC9-I3M4
F/'gr. 7 — Typical dc beta characteristics Fig. 8 - Typical dc beta characteristics for Fig. 9 - Typical saturated switching
for 2N6100and 2N6101. 2N6102and2N6103. characteristics for all types.
CASE TEMPERATURE (T-I'25'C CASE T MPERATURIE 'Tcl'ZS'cllllllllllllllllllllllH

CASE TEMPERATURE tTc )-23*C|
K>
iS »ooj|[|||||||[||||||||||||
< e
JUiiooti 1
•E jt'ôo'-Uiimiiiiiiiiiiiiii
£ X ilt'SJIttfftlllllllllilll
«
K S }fflffi'Mbffi|||||[||||||||
[HttttJIsJIlllllllllllllHIllllllllllHlllftfll
% %
4
g m l'°°' 1
m IrnTTT % 4fl IIIIIIHIHIljgolllllllllK
1
H
lllllllllllllllTltlllllllll
9tSE PWREHT (Ig) SSL BASE CURRENT Ugl '°»» ttiti ||[||||||||||||||||1||1|||
JO JO 40 90 «0 70 20 SO 40
COLLECTOR-TO-EMITTER VOLTAGE (VcE>—
92CS- 15991
Fig. 10 - Typical output characteristics for Fig. 1 1 - Typical output characteristics for Fig 12 - Typical output characteristics
2N6098, 2N6099, and RCA3055. 2N6100and 2N6101. for 2N61 02 and 2N6103.
189
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

Epitaxial-Base, Silicon N-P-N andP-N-P VERSAWATT
Transistors
General-Purpose Medium-Power Types for Switching and Amplifier Applications
RCA 2N6106-2N6111, 2N6288-2N6293, The 2N6289, 2N6291, and 2N6293 n-p-n Features:
and 2N6473-2N6476, 41500 and 41501 types and 2N6106, 2N6108, and 2N61 10
are epitaxial-base silicon transistors sup- p-n-p devices fit into TO-66 sockets. The
plied in a VERSAWATT package. The
VERSAWATT package (molded
remaining types are supplied in the JEDEC
silicone plastic)
2N6288-2N6293, 2N6473, 2N6474, and TO-220AB straight-lead version of the
Complementary n-p-n and p-n-p types
41500 are n-p-n complements of p-n-p VERSAWATT package. All of these de-
Thermal-cycling ratings
types 2N61 06-2N61 11, 2N6475, 2N6476, vices are also available on special order in
and 41501, respectively. All these transis- a variety of lead-form configurations.
curves specified for dc operation
tors are intended for a wide variety of
medium-power switching and amplifier
applications, such as series and shunt
regulators and driver and output stages
of high-fidelity amplifiers.
P T «MAX.}<40W |
* 'jC
^
1 kY".
a
l0
k
1 V \j»
\N Y&
i \ V \\N?"
\ BOTTOM VIEW BOTTOM VIEW
\ \> \\ vNt°-
x
JEDEC TO-220AA
2N6106. 2N61M, 2N61 10
JEDEC TO-220AB
2N6107. 2IW109. 2N6111.
A§
r \ v\X\ 2N6289. 2N62S1 , 2N6293 2N62B8,
2N6473.
2N6476.
2N6290, 2N6202.
2N6474, 2N6475,
41 BOO. 41501
UMBER OF THERMAL CYCLES
Fig. 1 - Thermal-cycling ratings for

all types.
2N6288 2N6290 2N6292

2N6289 2N6291 2N6293 2N6473 2N6474 41500
MAXIMUM RATINGS, Absolute-Maximum Values: P-N-P 2N6110* 2N6108* 2N6106* 2N64754 2N6476* 41501*
2N6111* 2N6109* 2N6107*
•COLLECTOR-TO-BASE VOLTAGE V CB0 40 60 80 110 130 35 V
•COLLECTOR-TO-EMITTER VOLTAGE:
With external base-supply resistance (RgB^ = 100£2,
and base supply voltage (Vgg) =0V Vqex 40 60 80 110 130 35 V
With base open Vqeq 30 50 70 100 120 25 V
•EMITTER-TO-BASE VOLTAGE V EB0 5 5 5 5 5 3 V
•COLLECTOR CURRENT (Continuous)
At case temperature ^ 106°C \q
•BASE CURRENT (Continuous)
At case temperature ^130°C Ig
At case temperatures up to 25°C 40 40 40 40 40 40 W
* At case temperatures up to 100°C 16 16 16 16 16 16 W
At ambient temperatures up to 25°C 1.8 1.8 1 .8 1 .8 1.8 1.8 W
At case temperatures above 25°C Derate linearly at 0.32W/°C
* At case temperatures above 100°C Derate lineraly at 0.32 W/°C
At ambient temperatures above 25°C Derate linearly at 0.0144 W/°C
Storage and Operating (Junction) -65 to 150
•LEAD TEMPERATURE (During Soldering):
At distance ^ 1/8 in. (3.1 7 mm) from case for 10 s max. 235
* 2N-Series types in accordance with JEDEC registration data format (JS-6, RDF-2) 4For p-n-p devices, voltage and current values are negative
190
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C Unless Otherwise Specified

2N6292 2N6290
CHARACTERISTIC VOLTAGE CURRENT 2N6293 2N6291
UNITS
V dc A dc
2N6106+ 2N6108*
2N6107* 2N6109+
VC E vBe »C 'B MIN. MAX. MIN. MAX.
'CER 75 - 0.1
(B BE = iocm) 55 _ 0.1
mA
70 2 -
(T C = 150°C)
50 _ 2
75 -1.5 - 0.1
'CEX 56 -1.5 _ 0.1
mA
70 -1.5 2 —
(T C =150°C) _
50 -1.5 2
40 - 1
•CEO 60 _ mA
1
'ebo -5 - 1 - 1 mA
V CE0 (sus) 0.1" 70 - 50 - V
V CER (sus)
0.1 80 - 60 - V
(R BE = 10012)
a
4 2 30 150
"FE 4 2.5" 30 150
a
4 7 2.3 2.3
a
V BE 2N6292, 2N6293 4 2 1.5
2N6290, 2N6291 4 2.5" - - 1.5 V
s
All Types 4 7 3 3
2" 0.2 1
V CE (sat) 2.5" 0.25 - - 1 V

a a
7 3 3.5 3.5
h fe
4 0.5 20 - 20 -
(f = 50kHz)
*T
2N6290 2N62&3
- 4 0.5 4 - 4 - MHz
2N6106-2N6109 -4 -0.5 10 10
IN
(f = 1 MHz)
2N6290 2N6293
- 4 0.5 4 - 4 -
2N6106-2N6109 -4 -0.5 10 10
C bo
- 250 - 250 pF
(f =1 MHz, V CB = 10V)
R 0JC - 3.125 - 3.125
- °C/W
R 0JA 70 - 70
"Pulsed; pulse duration = 300 n$, duty factor = 0.018. *For p-n-p devices, voltage and current values are negative
*ln accordance with JEDEC registration data format (JS-6 RDF-2).

CAUTION: The sustaining voltages Vq E q(sus) and Vq E r(sus) MUST NOT be measured on a curve tracer.
191
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473- 2N6476, 41500, 41501

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C Unless Otherwise Specified
CHARACTERISTIC VOLTAGE CURRENT 2N6474 2N6473 41500

UNITS
Vdc A dc 2N6476* 2N6475* 41501*
V C E VBE 'c >B MIN. MAX. MIN. MAX. MIN. MAX.
30 — — 0.25
'CER -
120 0.1
<r be = ioon)
100 0.1 mA
120 2 —
(T c = 100°C)
100 _ _ 2 _
120 -1.5 - 0.1 -
'CEX 100 -1.5 _ 0.1 _
mA
120 -1.5 2
(T c = 100°C)
100 -1.5 _ _ 2 _ _
60 - 1
'CEO _ — _ mA
50 1
-5 - 1 1
-
'ebo -3 : mA
1
V CE0 (sus) 0.1

a
120 - 100 - 25 - V
V CER (sus) -
0.1 130 - 110 - 35 V
(R BE = ioon)
a
4 1 25
hFE 4 1.5
a
15 150 15 150 -
a
2.5 4 2 2
a
4 1 1.5
VBE 4 1.5
a - 2 - 2 - V
a
2.5 4 3.5 3.5
a
1 0.1 1
V CE (sat) 1.5
a
0.15 - 1.2 - 1.2 - V
a
4 2 2.5 2.5
h fe
4 0.5 20 - 20 - 20 -
(f = 50 kHz)
f
T
41500, 2N6473, 2N6474 4 0.5 4 - 4 - 4 - MHz
2N6475,2N6476 -4 -0.5 5 5
I
hfe I
(f MHz)
= 1
41500, 2N6473,2N6474 4 0.5 4 - 4 - 4 -

2N6475,2N6476 -4 -05 5 5
ôbo
(f=1 MHz, V CB = 10V) - 250 250 - 250 pF
R 0JC - 3.125 3.125 - 3.125

°C/W
R 0JA - 70 - 70 - 70
'Pulsed; pulse duration = 300ms, duty factor = 0.018. *For p-n-p devices, voltage and current values are negative.
*2N-series types in accordance with JEDEC registration data format (JS-6 RDF-2).
CAUTION: The sustaining voltage Vceo^ sus ^ anc '
VcER( sus ^""^ NOT
) be measured on a curve tracer.
192
. V A V
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41560, 41501

Case Temperature ITC) - 2?C Unless Otherwise Specified COLLECTOR-TO-EMITTER VOLTAOEIVcEl— 4 V
ELECTRICAL CHARACTERISTICS. At - CASE TEMPERATURE ITC )-29*C
20
VOLTAGE CURRENT 2N6288 2N6110*
UNITS
I
CHARACTERISTIC SYMBOL 2N6111*
Vdc Ark 2N6289
V CE V BE 'C >B
MIN. max: MIN. MAX.
§
J* ^*3
S
'
>
resistance (RfjE' = 100 H 35 _ 0.1
•_ -0.1
*
12
p %
mA s
<
With(R BE = 100 Hand 'CER
)
i 8
TC = 150°C 30 - 2 - -2
With base-emitter junction 4

reverse-biased 'CEX 37.5 -1.5 _ 0.1 _ -0.1 mA 1 4 s •
With base-emitter junction COLLECTOR CURRENT (Ic l-A ma-vm

reverse-biased and
Tc = 150°C 30 -1.5 2 -2 Fig. 2 - Typical gain-bandwidth product for
20 - - -1 mA 2N6106-2N61 1 1, 2N6475, 2N6476,
With base open 'CEO 1
- and 41501.
Emitter-Cutoff Current 'EBO 5 - 1 -1 mA
B
-
2 7
Sustaining Voltage:
With base open V CE0 (sus) 0.1" 30 . -30 _ V

emitter resistance V CER (sus) 0.1 40 - -40 - V
"
(R BE ) = 100n 5
-
DC Forward Current 4 3» 30 150 30 150
Transfer Ratio
"FE 4 7" 2.3 2.3 l 4
COLLECTOR-TO-EMiTTER VOLTME VCE --4 ( >
Base-to-Emitter Voltage: CASE TEMPERATURE (Tc )-25 #C

2N6288, 2N6289 V BE 4 3» - 1.5 - V 5
i
All Types 4 7a 3 3
Collector-to-Emitter 3" 0.3 1

_ -1
V CE (satl
.
V
Saturation Voltage 7« 3 _ '3.5 -3.5
COLLECTOR CURRENT IT C ) —
Signal, Forward-Current Fig. 3 - Typical gain- bandwidth product for
Transfer Ratio:
4 0.5 20 20 2N6473 and 2N6474.
f = 50 kHz hfe
Gain-Bandwidth Product:
2N6288-2N6289 4 0.5 4 - - MHz
'T
2N6110-2N6111 -4 -0.5 10 COLLECTOR-TO-EMITTER VOLTAGE [Vc£) = 4v
CASE TEMPERATURE (T C )'25*C
Magnitude of Common- | -0
Emitter, Small-Signal, Forward-

Current Transfer Ratio: ^ 8
f = 1 MHz |"fe|
2N6288-2N6289 4 0.5 4 - 4 -
Is
2N6110-2N6111 -4 -0.5 10
' Collector-to-Base Capacitance: * 4

f = 1MHz, V CB = 10V cobo - 250 - 250 pF
2
Thermal Resistance: I
R 9JC - 3.125 - 3.125
Junction-to-Case °C/W
Junction-to- Ambient R 9JA ~ 70 _ 70
l
COLLECTOR CURRENT Hc»-v
Pulsed: Pulse duration - 300 lis, duty factor - 0.018. *For p-n-p devices, voltage and current values are negative.
*ln accordance with JEOEC registration data format (JS-6 RDF-2).

Fig. 4 - Typical gain-bandwidth product for
CAUTION: The sustaining voltage V CER (sus) MUST NOT be measured on a c 2N6288-2N6293, and 4 1500.
COLLECTOR-TO-EMITTER VOLTAGE lVCE >'-4 V L^L|.

-6
++Wt+
I u I) -5
1 1 1 1 1 I 1 1 1 1 1
1
1 I 1 1 1 1 1 I I M &.- -«fryTI M>1
4
i 11 111 11 II 111111 1 [111 -TO
1
° 3
if 1 HI 1 1 1 1 1 1 1 IT-"
-3
4
-LU-Ui
a 2
UJ _2
"m
i
i
jiff
-1
1/11 i/ffi
-2
.
-0.5
BASE-TO-EMITTER VOLTAGE
-I -1.5
(VBE ) —V BASE-TO-EMITTER VOLTAGE <
eE I —V BASE -TO -EMITTER VOLTAGEtVgg) —
9ECS-ISOI6
Fig. 5 - Typical transfer characteristics for Fig. 6- Typical transfer characteristics for Fig. 7 - Typical transfer characteristics for
2N6106-2N6111. 2N6473 and 2N6474. 2N6475 and 2N6476.
193
; A
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

COLL '
II 1
i >
"""'
25»C
S! ioc-
s' ?
5 •*
COLLECTOR CURRENT (I c ) — A
Fig. 9- Typical dc beta characteristics for

2N6473 and 2N6474.
VOLTAGE (Vce) "-«V

s
400
| III
"CASE TEMPERATURI
I
liiê
g 200
2»'C
: ioo
B so
-40'C
| 60
o
g 40
£ 20
10
|6 8 4 • 4
-5.7
COLLECTOR-TO-EMITTER VOLTAGE (VCE) — V
92CS-27700
Fig. 8 Maximum
- operating areas for 2N6106-2N61 1 1 and 41 501.
2N6106-2N61 1 1.
COLLECTOR -TO EMITTER VOLTAGE VrF 4V-

|
'K.,
f <t''*>
hJ
2J c
<
| l0
v •
*
i *
COLLECTOR CURRENT (I c l—
92CS-22539
Fig. 12 • Typical dc beta characteristics for

2N6475 and 2N6476.
1,1000,
•* 5
4
9
i '
CASE TEMPERATURE (Tel* 12 5'C
,o
°. >.
i 2S*C hi »•
'
V
* 2
^ N
§ ,0 \
:
i
6 8 I 2 4 6 8 8 i
-10 -IOO -0 01 C .1 - -10

COLLECTOR-TO-EMITTER VOLTAGE (VCE )-V 92C s-22527
COLLECTOR CURRENT ll c l —A
92CS-23930
Fig. 13- typical dc beta characteristics for

Fig. 1 1 - Maximum operating areas for 2N6475—2N6476. 41501.
194
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

COLLECTOR- TO-EMITTER VOLTAGE 4 V
MUM
(V(; E I
JfUoo
CASE TEMPERATURE IV)- I29'C

1
3 200
hS!£
i ioo
« 80
-40'C
i- «0
S
c *°
| 20
l0
«
a a
6
COLLECTOR CURRENT (I c )-A
Fig. 15 - Typical dc beta characteristics for

2N6288-2N6293, and 41500.
IOb
I
c
1
MAX (CONTINUOUS)
1 III — CASE TEMPERATURE (Tr )«IO0"C-
|N
f"
S?r
i
*&
Xjk.
2530 40 50 70 I00 % '
COLLECTOR-TO-EMITTER VOLTAGE <VcE> V — i i
1
i
j &."«.
'
Fig. 14 - Maximum operating areas for 2N6288-2N6293 and 4 1500.

VC EO M
i
1
0.01 1 II 1 1
COLLECTOR-TO-EMITTER VOLTAGE (Vce )- V
Fig. 16 • Maximum operating areas for

2N6473-2N6474.
-108
1 III _CASE TEMPE tE(Tc )-IOO*C
I
c MAX. (CONTINUOUS) ,
j
r sfd i
1
S^W '
&
1 X*
ui
.
=H V
1
>.
^ ^
MAX.. 120 V 12N6476>-a f.
VCEO MAX « 100V (2N6475)-
-0-01 i Ml
«
1 1 1!
-i»
1
COLLECTOR-TO-EMITTER VOLTAGE IVCE )-V ^ 92c
Fig. 18 - Maximum operating areas for

2N6475 and 2N6476.
I0
I
c MAX. (CONTIN OUS) _CASE TEMPE RATUREI C>
IO0 # C
1
J*
35 50 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE )-V 2N6288 a N6289) 1
V*
*CEO MAX.. OV
2 N 6290 8 2 N829I) _
V CE0 MAX . 70 V
0.1
(2N6292 8 2 N6293)
j
5
Fig. 17 Maximum operating areas for 2N6473 and 2N6474. COLLECTOR-TO-EMITTER VOLTAGE (VCE )-V
>

2N6288-2N6293.
195
V
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

COLLECTOR -TO -EMITTER VOLTAGE (VCE )'-4V .
| | |
]
-
I -250
mm
~-200
Tr "*
r
r
if t-
1-IJO TT Or f
v n-
t^Jh
-50
0.2 04 0« as I I 2 14 16
SASE-TO-EMITTER VOLTAGE (Vg E I —V
Fig. 20 • Typical transfer characteristics for Fig. 21 - Typical transfer characteristics for 2N6106-2N61 1 1. 2N6475, and
2N6288-2N6293, and 41500. 41501. 2N6476.
-
COLLECTOR -TO -EMITTER VOLTAGE IV CC )>4V Hj
I I I I I I I I
COLLECTOR-TO-EMITTER VOLTAGE IVfE IJ»v| | | j | | | | j
|j~"
300 iiw
300
±?f n
u ll 111111111m 1 1
1 < 1 1 1 1 1 1
t 290 ? ll :
^ti 1111 1111 111 111 11 11 II ; 18
-SIÎ
1
[| 1 1| 1 1 1 1 [ 1 1 1 1 J 1 1 1 1
-200
SI
IE l 150 *
ll ff
S ioo
3 ft 3 100
50
so
BASE-TO- EMITTER VOLTAGE (V )-V

BE BASE-TO- EMITTER VOLTAGE (V 0E >-
Fig 23 - Typical input characteristics for Fig. 24 - Typical input characteristics for Fig. 25 - Typical input characteristics for
2N6473 and 2N6474. 41501. 2N6288-2N6293.
-6
1 1 1 I
|
1 I 1 1 1 1 I I8ASE CURRENTtI B )--200mA|-
o -5
-jOOnS
5-4
| -50i»a|-
±4o'w'+;
3
i"
j -2 A-
o
Oi A^
j
4 $ t 10 12 14 It -2 -4 -6 -6 -K> -12 -14 -16 2 4 6 8 10 12 14
COLLECTOR -TO-EMITTER VOLTAGE <V CE) V

COLLECTOR-TO-EMITTER VOLTAGE IVCE ) — COLLECTOR-TO-EMITTER VOLTAGE (VCE 1-
92CS-I90I5RI
KCS-IM73RI
Fig. 26 - Typical output characteristics for Fig. 27 - Typical output characteristics for Fig. 28 - Typical output characteristics for
2N6288-2N6293, and 41500. 2N6106-2N6111. 2N6473 and 2N6474
-3.5 CASE TEMP ERATL RE(TC ..29-C ttttiifj! i.

lj!i;
-1 J
< *1 TTs ASECU fftrrrl
I 200 mA t
j
Ul- 150mA ' '
V ill
! lii:
t fiiitJjl :i
nil
!S I!
jffl tttfTTnTTT
S I
t; -20mA._U-
I
ji[
8 1: [i
j-jj -10 mA -i- :
)i:
-0.5 ¥r\
Im Wt -5 mA-
W
'
t
HO -12
t lili -\_
-B
TF
-10
11111
-12 -14
1
||!!
COLLECTOR-TO-EMITTER VOLTAGE IVCE'" COLLECTOR-TO-EMITTER VOLTAGE I
Fig. 29 - Typical output characteristics for Fig. 30 • Typical output characteristics for
2N6475 and 2N6476. 41501.
196
A
POWER TRANSISTORS
2N6211-2N6214
Features:
High-Voltage, Medium-Power Silicon High voltage ratings

-,(«!«) - -400 V max. (2N6214)
'CEO"
-350 V max. (2N6213)
P-N-P Transistors - -300 V max. (2N6212I
- -225 V max.(2N6211)
Large safe-operating area
For Switching and Amplifier Applications Complements to 2N3585 transistor family
Thermal-cycling rating
In Military, Industrial, and Commercial Equipment
RCA types 2N6211, 2N6212. 2N6213, and 2N6214* are Applications:

epitaxial silicon p-n-p transistors with high breakdown-voltage Power-Switching Circuits
ratings and fast switching speeds. They are supplied in the
Switching Regulators
popular JEDEC TO-66 package; they differ in breakdown-
Converters
voltage ratings and leakage-current values.
Inverters
* Formerly RCA Dev Nos. TA7719. TA7410. TA8330, and TA8331, High- Fidelity Amplifiers
respectively.

2N6211 2N6212 2N6213 2N6214
•COLLECTOR-TO-BASE VOLTAGE V'CBO
c
With base open v CEo' sus '
-225 -300 -350 -400 V
With external base-to-emitter resistance (Roc) = 50 JJ Vrcp,(susl -250 -325 -375 -425 V
With base-emitter junction reverse-biased (Vgp = 1.5 V) -275 -350 -400 -450 V
^CEx' sus '
*EMITTER-T0-BASE VOLTAGE V EBO -6 -6 -6 -6 V

"COLLECTOR CURRENT (Continuous) -2 -2 -2 -2 A
I
c
'BASE CURRENT (Continuous) I
B
-1 -1 -1 -1 A
TRANSISTOR DISSIPATION: P
T
* At case temperatures up to 100°C and V CE up to 50 V 20 20 20 20 W
At case temperatures up to 25°C and Vq E up to 40 V 35 35 35 35 W
At case temperatures up to 25°C and V^g above 40 V See Fig 1

Storage & Operating (Junction) -65 to 200 * °C
* j MAX.* 200" c
•LEAD TEMPERATURE (During Soldering): 1
1 1
At distance > 1/32 in. (0.8 mm) fro m case for 10s max
I "-
JEDEC
•In accordance with registration data format (JS-6 RDF-11 5
\ v*
k
AN
<5|
sH
^^ V*>. c
I
\ A
\% ,/»
•
Yt I
10 "l I
\
iooo
I
NUMBER OF THERMAL CYCLES (THOUSANDS!

MC» -l»2lt
Fig. 2- Thermal-cycling rating chart for

all types.
COLLECTOR -T(l -EMITTER VOLTASE (VceI'-SV
O 2
l l l ll l l
S CASE TEMPERATURE (TC )- ISO "C
|
N
Tf •25»e \
*J
V
\\
\l
1 »
8 " 1
- - 1
-rl
COLLECTOR CURRENT del—
-10 "
-100 -1000 Fig. 3 - Typical dc beta characteristic
COLLECTOR-TO-EMITTER VOLTAGE (Vcf> —V for all types.
tzes- itziom
197
POWER TRANSISTORS
2N6211-2N6214
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC ) * 25°C Unless Otherwise Specified
Voltage Current
Vdc Ade 2N6211 2N6212 2N6213 2N6214
VCE V BE 'c 'b

Min. Max. Min. Max. Min. Max. Min. Max.
With base open 'ceo -150 _ -5 _ _ _ -5
-5 -5
With base-emitter junc- -250 1.5 -05
-315 1.5 - -05 -
tion reverse-biased -360 1.5 - -05 -
-410 1.5 -1 mA
With base emitter junc- *CEV -5
-250 1.6 -5~
tion reverse biased and -315 15 -5~
-360 1.5
5 5 5
T
c
= 100°C -410 1.5
1 -10
'ebo 6 - 1 - -05 - -05 -0 5 mA
-28 -1» 10 100
DC Forward-Current
h
-32 -1" 10 100
Transfer Ratio FE -4 -1 a
10 100
-5 -1 a 10 100
Collector to E miner
Sustaining Voltage V CE0 (sus) -0.2* -225 300 -350 - -400
With base open
With external base to
emitter resistance V CER (susl -0.2» 250 -325 375 - -425
(R -
50 il V
BE )
With base emitter junc

tion reverse biased and -450
V CEX <susl 1 5 -0.2» 275 350 400
external base to emitter
resistance (Rg l 50 <>
E
Emitter lo Base Voltage V EB0 5mA 6 -6 ^6

V
1 mA 6 _
Emitter to Base Satura

V BE (sat) -1« 125 1 4 1 4 -1.4 -14 V
tion Voltage
Collector to Emitter
V CE (sat) -ia 125 1 4 16 - 2 -25 V
Saturation Voltage
Output Capacitance 10
C obo 220 220 - 220 220 pF
(f 1 MHz) ,V
CB»
Second Breakdown
, Collector Current -40 0875 -0875 -0875 - -0875 -
A
's/b
(Base forward-biased)
Magnitude of Common
Emitter. Small Signal.
-10 - -
Short Circuit. Forward
Kl -0.2 4 - 4 4 4 -
(f = 5 MHz)
Saturated Switching Times:

•Bi&'B2
'r -1 06 -
06 - 06 - 06
Rise time -200 V -0 126
V CC =
•Bi&'B2
Storage time -1 - 25 - 2.5 - 25 - 2 5 us
«S
-200 V -0.125
V CC =
lB,*'B2
Fall time -1 - 0.6 - 06 - 0.6 - 0.6
«f
-200 V -0 125
Thermal Resistance - -
BfJJC -10 -1 - 5 5 5 5 °C/W
|
(Junction to case) |
In accordance with JEDEC registration data format JS-6 RDF-1.

Pulied. pulse duration = 300 fl s; duty factor < 2%.
198
j A
POWER TRANSISTORS
2N6211-2N6214
COLLECTOR-TO-EMITTER VOLTAGE (Vce)"" ^ CASE TEMPERATURE (T C 29 c -n-
I S=
1
-|6,
CASE TEMPERATURE (TC ).29'C
* 1
1
Ml a -5
Ic MAX. (CONTINUOUS) i 35
1 11
VM
*
J.
^ ^X*v " L- it — r£
=H: £S3 §? iS
u >' 1
% \ i.^ .
H H1 M
*
1
1% 1 " \ it?
w. \
\
fg H~
«C£ MAX.-225V<2NS2III- J -1
1
-aoi «CE MAX.—350 V (2N62I3) -

A » • 1 '
VCEO MAX.-4PO V (2NG2I4) -2

COLLECTOR CURRENT (Ic 1— A -0.5 -I -1.5
1 1 II 1 II III COLLECTOR CURRENT (I c ) —A

'
2 * « s * 92CS- 19236
,?wi
Fig. 5 - Typical gain-bandwidth product Fig. 6 - Typical saturation-voltage

for all types. characteristics for all types.
all types.
~~\ PULSE DURATION >20,.« COLLECTOR-TO-EMITTER VOLTAGE (V CE 1"-5V

=H 1
1
|i|[
1 1||||
PULSE DURATION »20^1 ~:~ COLLECTOR SUPPLY VOLTAGE
REPETITION RATE • 200 PULSES /• =:: ~:i (V<; C I'-200V
COLLECTOR SUPPLY VOLTAGE IVCC >' "200 V
I Bl -lBj-I c /«- 0.123 1c 1 ;;
':':':
is CASE TEMPERATURE ITC )'25 , C

CASE TEMPERATURE ITC C W5' T
* :::: ~~H
p 0.4
™ :::: ::::
~i ~ u "2
i
8 03
;;-.«
i^«>. h
M vX: .H
:
!-•
f||
-
!!::*&*
".':':
::::
^M
I 02
:::. *\ 5yv^: :u:
"::••
I*/!> 1
S 1 1 1 1 1 1 '
<f fffffff
•;=? -:. ::::
:*^ : lllllPi?JTIltTTT
: ni -0.9
| 0.1
-~
ij-i? tr=- :rr:
:
..- 0::
S
COLLECTOR CURRENT (Ic>- COLLECTOR CURRENT —
t2CS-l»23TRt
Fig. 8 - Typical turn-on time and fall-

Fig. 7 • Typical storage-time characteristic Fig. 9 - Typical transfer characteristics
time characteristics for all
types.
199
A
POWER TRANSISTORS
2N6246, 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472

Silicon N-P-N and P-N-P Epitaxial-Base High-Power
Transistors Features:
High dissipation capability: 125Wat2S°C
General-Purpose Types for Switching and Linear-Amplifier Applications
RCA-2N6246, 2N6247, 2N6248, ar.J 2N6469* *« epitaxial- and in the currents at which the parameters are controlled. Maximum safe-area-of-operation curves
base silicon p-n-p transistors featuring high gain at high cur- All are supplied in the JEDEC TO-3 package. Hermetically sealed JEDEC TO-3 package
rent. RCA-2N6470, 2N6471, and 2N6472* are epitaxial-base High gain at high current
silicon n-p-n transistors. They may be used as complements to
* Formerly RCA Dev. Nos. TA7281 TA7280, TA7279, and TA8724,
,
the 2N6469, 2N6246, and 2N6247, respectively. All of these
respectively.
devices have a dissipation capability of 125 watts at case * Formerly RCA Dev. Nos. TA8726. TA8443. and TA8442. re-
temperatures up to 25°C. They differ in voltage ratings spectively. TERMINAL DESIGNATIONS
Maximum Ratings, Absolute-Maximum Values:

2N6470 2N6471 2N6472
2N6469* 2N62464 2N6247* 2N6248*
•COLLECTOR-TO-BASE VOLTAGE V C BO 50 70 90 110
COLLECTOR-TO-EMITTER VOLTAGE.
*
resistance (Rbe) - 100 S2
VcER 110
With base open Vceq 100
•EMITTER TO BASE VOLTAGE VebO
c
100
B
'TRANSISTOR DISSIPATION: pT
At case temperatures up to 25°C * .
125 125
i
At case temperatures above 25°C Derate linearly 200 C -
^&
•TEMPERATURE RANGE; yfe.
Z 4
Storage & Operating (Junction).
<
At distances > 1/32" (0.8 mml from
^
*
seating plane for 10 s
* In accordance with JEDEC

max
registration data format (JS-6

RDF-21.
9
3
\\\
1
\
vF a/^-j
10
%
\?
(IN
A,
THOUSANDS!
92cs . l95
Fig. 1 - Thermal-cycling rating chart
for all types.
CASE TEMPERATURE (Tc)'25 # C

2N6i46-r,iteia!tntoHEEft pulse operation
2N6469 -70-1-2
Tc MAX. coNTINUol
COLLECTOR CURRENT (Ic)—

Fig. 2- Typical collector-to-emitter
saturation-voltage character-
for 2N6246, 2N6247,
istics
2N6248, and2N6469.
2 4 6 e , 2 40 60 80 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE> v
92CS-22379
Fig. 3 - Maximum operating areas for all types. *

-0 5
BASE-TO-EMITTER VOLTAGE <VBE >-

2N6246, 2N6247, 2N6248, and
2N6469.
200
; A A AV
POWER TRANSISTORS
2N6246, 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472

25 COLLECTOR-TO-EMITTER V0LTACE (VCE>*~ 4 V
ELECTRICAL CHARACTERISTICS FOR N-P-N TYPES, At case temperature (Tc) = 25°C unless otherwise specified CASF TFMPFRATURE IT^).2S'C
test
LIMITS
CONDITIONS
i*°
VOLT- CUR-
CHARACTERISTIC SYMBOL AGE RENT 2N6470 2N6471 2N6472 UNITS
5
Vdc Adc I '
VCE Min. Max. Min. Max. Min. Max.

'c <B f 10
Collector-Cutoff Current: 35 500 *

With external base-emitter 55 - - 500 - JuA
'CER <
resistance (R BE ) = 100 fi 75 500
With base-emitter 45 500

junction reverse-biased 65 - - 500 - MA
V BE = -1.5V 85 500 COLLECTOR CURRENT llrl A
92CS-I9588
'CEX
With reverse bias, 40 5
Fig. 5- Typical gain-bandwidth product as a
V BE -1.5 V, and 60 - - 5 - mA
= function of collector current for
Tc = 150°C 80 5 2N6246, 2N6247, 2N6248,and2N6469.
12 COLLECTOR-TO- EMITTER VOLTAGE (vCE ). 4V
With base open 'CEO 20 1
30 - - 1
- mA
40 1 x 10
s
1 9
Emitter-Cutoff Current:
V BE = -5V _ 1
- 1
- 1 mA ! .
'ebo
I 7
5a 20 150 20 150 20 150 o
DC Forward-Current
h FE
4
£ 6
Transfer Ratio 4 15 a 5 5 5
S 5
V CE0 (sus) 0.2 40 b - 60 b - 80 b -
Sustaining Voltage: " 3
With base open
V 1 2
With external base-emitter
V CER (sus) 0.2 60b - 70 b - 90b - 1
resistance (R B e' = 100 ft

0. )l
4 5a ~ 1.3 - 1.3 1.3

V COLLECTOR CURRENT del— 92CS-22449M
Base-to-Emitter Voltage VBE _
4 15 a 3.5 3.5 3.5
Fig. 6- Typical gain-bandwidth product as a
5a 0.5 - 1.3 - 1.3 - 1.3 function of collector current for
V CE (sat) V
15 a 5 3.5 3.5 3.5 2N6470, 2N6471, and 2N6472.
Saturation Voltage
Magnitude of Common-Emitter
Small-Signal Short-Circuit
|h fe 4 1 5 - 5 - 5 -
Forward-Current Transfer Ratio: |
f = 1 MHz
h fe 4 1 25 - 25 - 25 -
Transfer Ratio:
f = 1 kHz
Thermal Resistance:
R 0JC - 1.4 - 1.4 - 1.4 °c/w
Junction-to-case
* In accordance with JEDEC registration data format US-6 BDF-21. and VCER<*<">
CAUTION: Sustaining voltages VcEO<tu*>
3 Pulsed; pulse duration = 300 duty factor = 1.8%. MUST NOT be measured on a curve tracer.
(is,
BASE-TO-EMITTER VOLTAGE (VgEl —
92CS-2I944RI
Fig. 7 Minimum
- reverse-bias second-break-
down characteristics for all types.
(Values for p-n-p types are negative).
1666, 4V
„I0>. COLLECTOR- T0-EM1TTER VOLTA0E IVCE> '- 4V 1
ujl0 3 «
-H- *
—<
—
1 |
' . | |
CASf' | 1
CASE TEMPERATURE (T C H2»*C
I . V \ '
o
~ 5 "
25'C~ 5 2
A
i
sC ex.
^$\P 5 io
2
-
T^
Je
fe
&
.
-i- 1
X
^^ *
*
IOO
8
r^ f^£
3 io- 3 10
—
i
* 4 S 2
j ° 10
o 1
.L , i
* 6 5 B
-001 -0.
COLLECTOR CURRENT (Ic*— COLLECTOR CURRENT lie)—
COLLECTOR CURRENT (I r ) —A
Fig. 8 • Typical dc beta characteristics for Fig. 9• Typical dc beta characteristics Fig. 10 - Typical dc beta characteristics for
2N6246, 2N6247. and 2N6469. for 2N6248. 2N6470, 2N6471, and 2N6472.
201
V . V V
POWER TRANSISTORS
2N6246. 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472

ELECTRICAL CHARACTERISTICS FOR P-N-P TYPES. At cese temperature (Tc ) - 2S°C unless otherwise specified
TEST CONDITIONS LIMITS TEST CONDITIONS LIMITS
SYMBOL VOLTAGE CURRENT VOLTAGE CURRENT UNITS

2N6469 2N6246 2N6247 2N6248
Vdc Adc Vdc Adc
VCE VBE Min. Max. Min. Mix. VCE VBE 'C •b Min. Mix. Min. Mix.
'c >B
(
CER
= -35 - -200 - -75 - -200 -
(R BE ) '°° n KA
-55 -200 -95 -200
-45 1.5 - -200 - -85 1.5 - -200 -
/iA
'CEX -65 1.5 -200 -100 15 -200
-45 1.5 -5 -70 1.5 - -5
T c - 150°C
-55 -90 1.5 _ -5
mA
1.5
-20 - -1 -40 -1
'CEO _ -50 - - -1
mA
-30 -1
5 - -5 - -5 5 - -1 - -1 mA
'ebo
-4 -5" 20 100
-4 -5 a 20 150 -4 -6« 20 100
h -4 -7» 20 100 -4 -10« 5
FE
-4 -15" 5 5 -4 -15 a 5
V CE0 (susl -40 b -60 b -0.2 -80 b . -100 b .

0.2
V
Vcer(sus) -02 -50b - -70 b - -0.2 -90 b - -1T0 b -
-4 -15 a - -35 - -4 -6 a -1.8 -

v Be V
-4 -7 a -2 -4 -5» - -1.8
-5 a -05 -1.3 -5» -0.5 -1.3

-7 a -0.7 -1.3 -6» -0.6 - -1.3 -
V CE ($at) V
-15 a -5 - -3.5 - -15» -4 -3.5
-15 a -3 -2.5 -10* -2 -3.5
1
M
- 2 MHz
-4 -1 5 " 5 - -4 -1 5 - 5 -
-4 -1 25 - 25 - -4 -1 25 - 25 -
f - 1 kHi
R 9JC - 1.4 - 1.4

- 1.4 - 1.4 °C/W
b CAUTION: CAUTION: SuiUininf *olBf€ V
* In accordance with JEOEC registration data format (JS-6 RDF-2). ceo liusl ind VCer>llu
* Puliad; pulee duration - 300 m. duty factor
MUST NOT be mmmmd en » curve tracer.
-14%.
-S00
COLLECTOR-TO-EMITTER VOLTAOE <*E » 4V ffffffl
-500
H foWftij
J3
•
|
-400
:iii =ii
~ = r~ Sfl
z -500
iiS
:~:f! V:
::
.
~":
- fin
=if'
^tn S/
V
^
s9
:::: ~:: :'::: '»*>
?;;;
•>
:'::;'
y.
-100
Sii
*3<& ffrtt
uil iS: S 5
^- P •T
c -0â -0 5 -0.1 -L - .2 -1. 5 -175 0.25 05 075
OS -075 -1.0 -125 -IS
BASE-TO-EMITTER VOLTAGE (VB£r-V BASE-TO-EMITTER VOLTAGE IVej)—
BASE-TO-EMITTER VOLTAGE (Vac)— 92CS-I9! ucs-n
Fig. 12- Fig. 13 Typical input characteristics for
Fig. 1 1 - Typical input characteristics for
2N6246, 2N6247, and 2N6449. 2N6248. 2N6470. 2N6471, and 2N6472.
-15
CASE TEMPERATURE(TC |.25*C
CASE TEMPERATURE <TC ).2S'C I 1 1 I 1 1 1 1 1 1 1 1 1 1 1 1 1
[
1
J [
IMIIiin l
J lI«')'-BO0mAJ|
| | |
| 1
-12.3
-15 -BASE C
iBAS E C
L-l25wU4|
T B5W?5
U.5 400 f.
Em
1 | | | | |
iftttj" d LUilL,
J
-10
iOOj
s
m Sft
—£ s '— p-400|{ttffl
I-7.S
| Sr
am
Si-iooBSSfi
rTîniiiiiinttttti
u "5
-50 1 1 1 ll 1 1 1 1
5» nt:
-2p[ I'llllljillll
-1.5
| 1 1 | | | [ | |
-2.a TrrHtfl- M WWII
! 1 i -• » 2 -M
COLLECTOR-TO-EMITTER V0LTA6E(V CE ) — V 92CS-I997
COLLECTOR-TO-EMITTER VOLTAOE («££)—
92CS-2I849RI
COLLECTOR-TO-EMITTER VOLTAGE (VCE I V
Fig. 14 - Typical output characteristics for Fig. 15 - Typical output characteristics for Fig. 16 - Typical output characteristics for
2N6246, 2N6247, and 2N6469. 2N6248. 2N6470, 2N6471, and 2N6472.
202
V
POWER TRANSISTORS
2N6246, 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472
aASE-TO-EPWTTER VOLTAGE (V BE )—

2N6470, 2N6471, and 2N6472.
40 60 80 K)0
COLLECTOR-TO-EMITTER VOLTAGE (VcE> —V
92CS-22380
Fig. 17 - Maximum operating areas for all types.*
1.2 ~:
: REPETITION RATE "500 PULSES/1
-COLLECTOR SUPPLY VOLTAGE (Vcc )»-ZOV
r H5 S:
4.
1
1
0.8
06
•--;
HH
=5
™
s*
=::
ft?
£HS HJ Sr
wj-=
«
£*> ,-i B2 -i c /io
jji-iifeifedll:
TORN -ON TIME(t0(1 ) r*j

3:
-
:—
02
_t|i delay time
l
COLLECTOR CURRENT{I C ) A
COLLECTOR CURRENT(I C ) A
MCS-2Z1SO
Fig. 19 - Typical saturated switching charac- F/g. 20 - Typical saturated switching charac-
teristics for 2N6470, 2N6471, and 2N6246, 2N6247,
teristics for
2N6472. 2N6248, and 2N6469.
203
POWER TRANSISTORS
2N6249, 2N6250, 2N6251

Features:
450-V, 30-A, 175-W Silicon N-P-N High voltage ratings:
Switching Transistors V CBO = 450V(2N6251)
375 V (2N6250)
For Switching Applications in Industrial and Commercial Equipment 300 V (2N6249)
High dissipation rating:
RCA-2N6269. 2N6250 and 2N6251

Pt=175W
are these transistors especially suitable for off-
multiple epitaxial silicon n-p-n
power tran- line inverters, switching regulators motor
sistors utilizing a multiple-emitter -site struc-
Maximum saf e-area-of-
controls, and deflection circuit applications.
operation curves
ture. Multiple-epitaxial construction maxi-
The high gain and high Eg/b energy-handling
mizes the volt-ampere characteristic of the
device and provides fast switching speeds.
capability of the 2N6249 make it an excel-
lent choice for motor-control applications
Multiple-emitter-site design assures uniform TERMINAL DESIGNATIONS
current flow throughout the structure, which
in which large winding inductances are en-
produces a high Ig/b and a large safe-oper- countered and high surge currents are re-
quired to start the motor.

ation area.
The high breakdown voltages, low saturation
These devices use the popular JEDEC TO-3/
TO-204MA voltages,and fast-switching capability of the
package; they differ mainly in
voltage
2N6250 and 2N6251 make them especially
ratings, leakage-current limits, and
suitable for inverter circuits operating di-
VfjE(sat) ratings.
rectly off the rectified 1 1 5-V power line or a
The exceptional second-breakdown capabili- bridge configuration operating from the
ties and high voltage-breakdown ratings make
rectified 220-V line. JEDEC TO3/TO-204MA
MAXIMUM RATINGS, Absolute-Maximum Values: 2N6249 2N6250 2N6251

* v CBO 300 375 450 V
V CE0 (sus) 200 275 350 V
* V CEX ($US > <V
BE = 0V) 225 300 375 V
V CER (sus) (R BE )<50« 225 300 375 V •
* v EBO 6 6 6 V
* 'c 10 10 10 A i f
'CM 30 30 30 A £ 100
§/
5
*
'b 10 10 10 A i
-i
f*^S
£&<* ^2**-.
e
At T c up to 25 C and V CE up to 30 V 1 75 1 75 1 75 W i P
At T c up to 25 C and V
CE above 30 V Derate linearly at 1 '
C/W
* TJ + T $tg -65 to +200 °C IV \\ K • 1 •»•
At distances > 1/32 in. (0.8 mm) from case for 10s max. . . . 230
Fig. 1 — Thermal-cycle rating chart for

* 2N-Series types in accordance with JEDEC registration data format (JS-6, RDF-1 ). all types.
IC'IB'IO <2N«249I,BC2
I
2
5 ^
IT.. 4~H*ffi
ii_LU»c. 1) 1 1 1 II Ml
ki i
§ jK 1
£J 0.5 fffrj Sj
TTTtfT ffl
COLLECTOR CURRCNT(I C I COLLECTOR CURRENT <X C > — COLLECTOR CURRENT (I c ) k
?ZCS-I9«t0ftl
Fig. 2— Typical normalized dc beta char- Fig. 3— Typical base-to-emitter saturation Fig. 4— Typical collector-to-emitter
acteristics for all types. voltage characteristics for all types. saturation voltage charac-
teristics for all types.
?M
POWER TRANSISTORS
2N6249, 2N6250, 2N6251

COLLCCTOK- VOITASE (V C £| »
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25° C Unless Otherwise Specified "l||||j| rUtiHl! HftTI
TEST
i\Arr
10 4 r
Hi£itr 4- ,iiiiiiiiiiiiiiiiiiininiiiiiiiinii
LIMITS
CONDITIONS U i . 1
DC DC N - 7 '"Wpn
CHARAC- l/OLT CUR- w ^H*'"
TERISTIC AGE RENT T 1 S
::::
||Fstf8 M
(V) (A) 2N6249 2N62S0 2N62S1 S
o 3
II
VC E "c >B MIN. TYP. MAX. MIN. FYP. MAX. MIN.'ryp. MAX. 2
£
150 - - 5 - -
225 - 5 -
'ceo
300 5
225 5
for all types.
'CEV 300 - - - - 5 - - mA
V BE=-1.5 375 5
450
'CEV 225 10
V BE = -1 .5 300 - - - - 10 - -
o
T C =125°C 375 10
450
'ebo - - 1
- - 1
- - 1 mA
V BE = -6
V CE o<sus) 02 200b - - 275b - - 350b - - V
V CE r(sus) 225b - - 300b - - 375b - - V
02
R B E=50n
v EBO 6 - - 6 - - 6 - - V eOLL£CT0H-TO-EI»TU VOLTMC IVfc t )—
l
E =1mA
Fig. 6— Typical output characteristics for
3 10« 10 50 all types.
3 108 - 8 50
"FE 3 10* - 6 - 50
4 10a
TRANSISTO R SHOULD K
OPERATED ITtTHIN THE
10a LIWT5 OF THE CURVE SHOWN IN PI B.I
1 2.25
10a 1.25 - - - - 2.25 •
- -
V BE (sat) V
10a 1.67 2.25
4
16» 3.2 \
<"
1
10" 1 1.5
10a 1.25 - - - - 1.5 - - a
V CE (sat) V 1
108 1.67 1.5 o.oi
2
16a 3.2
;
"*
Ih fe |
10 1 2.5 8 - 2.5 8 - 2.5 8 - *ODOI . i i

, ,.J. UU1 J L-Ll l_i — i_i_L
f=1MHz
'S/b - - - - - - A
30 5.8 5.8 5.8 Fig. 7— Typical thermal response characteristics
t = 1s nonrep.
p for all types.
ES/b vBE=-^
R B = 50f2, 10c 2.5 - - 2.5 - - 2.5 - - mJ
L=50/iH
10 1 0.8 2
V CC =200V, 10 1.25 - - 0.8 2 -
lB1
= 10 1.67 0.8 2
-'B2
t 10 1 1.8 3.5
S
V cc = 200 V, 10 1.25 - - 1.8 3.5 - Ms
= 10 1.67 1.8 3.5
•b1 -'B2
tf 10 1 0.5 1
V CC = 200V, 10 1.25 - - 0.5 1 -

= 10 1.67 0.5 1
'B1 -'B2
R 0JC 10 5 - - 1 - - 1 - - 1 °C/V 1/
* 2N-Series types in accordance with JEDEC registration data format (JS-6 RDF-1).
* Pulsed; pulse duration <300 us, duty factor = 2%. Fig. 8— Typical rise-time characteristics for
b CAUTION: The V CE0 (sus) and V CER (sus) MUST NOT
sustaining voltages be measured on a curve tracer. all types.
.205
— — A
POWER TRANSISTORS
2N6249, 2N6250, 2N6251

I" PULSE DURATION- 20 /••
ido
s I, I
„.. .w-. w..-,.„„w ,.
c ,-«, V REPETITION RATE- 300 Hi
COLLECTOR SUPPLY VOLTASE (Vccl-200 V t
6 J
n I 1
CASE TEMPERATURE (Tc>-2S*C
IC/I( 10 (2N624»I,S<2N«250I,
"I 1
I
PULSE OPERATION «l
4
! Ir. MAX.(PULSED) i
ixl
"
i
_...j . -- -\ %~
I
2
ill
1 V
\
^
ic *AX. (CO NTINUOU
< IO II I'V —
I • — \X
\
t\ CT'"
\
X 6 .
OISSIPA1 10
..J
K-LIMITED-T
\
\
l_i
, 1 |l| ;
F,
S « _
1
\A
C
a:
3 1
'
II! V \ \ \\ "1 — Typical storage-time characteristics
U
«
III
"C
w. \
-[ Fig. 11
for all types (with constant forced
•
i
s
cW \~ gain).
U
\"\
1
• FOR SINGLE ...

f\\
!
S '
NONREPETITIVE
PULSE !
, 1 UW|5 r \ PULSE DURATION -20,.
8
-r^tr-J-fTr!}-^-- r\ REPET TION RATE-SOO H>
6
4
E=g£ 4-U
Itmt
' \ \ \\
\
\
_ COLLEC TOR SUPPLY VOLTAOE (Vcc
CASE T EMPERATURE (TC I>2S*C
2-'< 67
A <2N«24*ll.2SA(2N«290l
A(2NS28H
• 200 V §
|
V CE0 MAX.«200 V (2N6249) =s
\
2
J
V CE0 MAX. = 275 V (2N6250)
v\
i
T ~ niiBSE
: fesfcT-fSji
:
:|::lr H~ iS
V CE0 KIM r;::
OS
B IJHpfefc 5? sA *oy^
-- '
iti
O.I
46810 2 4 6
i
8 100 2
^ 4 6 8 K>00
$
i
4
::li
~.
U:l|::n|n:Hn??
:
rJ. {n??{S«Jj5
^Si i
H'&? A3 Sc
s^f.
=
COLLECTOR-TO-EMITTER VOLTAGE (V CE —V S 2
*jtj
)
92CS-I9468
l
iBjg
2 4 • t 2
F/fli y — Maximum operating areas for all types at Tc « 25°C. COLLECTOR CURRENT (I c ) —
Fig. 12 — Typical storage-time characteristics
for all types (with constant base
drive).
10
8
—
"^T=V -H+H
DISSIPATION- LIMITED"
— h-l-H — t-
6
r
4 — H+ <
!
I
!
!
1
.4... 1
^
...j
1 "
2 _„.-4i i '
CA 3E TEMPER ATURE (1
c» 25*C
1
i --j~ "'f
1
-: '
' '
1
III !
CASE TEMPERATURE (Tc l»IOO*C

8
T
if
s .. i
...|_+-j-i
j_ j f. 1. ..__i
,
"s/i
[T
!
"1
- _ .._. Fig. 13 — Typical fall-time characteristic for
£ *
oc
i
n \ all types.
3 " "'
j ..
u ; i i.
14-,.*
1
o
-
<j
-j-j- j
--;- :
- ... ...
PULSE DURATION- 20 »•
REPETITION RATE-9O0 Hi
COLLECTOR SUPPLY VOLTAGE (VcC>*200V
CASE TEMPERATURE ITcl-29'C
! IC'I»'IO (2N4249), »(!»«250l,
JO.I -.4.-
o - J 1
O 8
6 ZZ_ —i— 1
T
A
f
Si
vt
4
1
>
2
r
-
*
l- ...
V CE0 MAX.'20O V (2N6249
V CEO MAX.>275 V (2N625C

l|
"
1
f
—
V CE0 MAX." 350 V (2N629I III
• -( - ....
H i ...
001 i
Id 4 6 8,
1
COLLECTOR-TO-EMITTER VOLTAGE (VCE I —V 92CSH

Fig. 14 — Typical inductive- and resistive-load
Fig. 10 — Maximum operating areas for all types atT^ m 100 C. fall-time characteristics for all types.
206
POWER TRANSISTORS
2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287
20-Ampere Complementary N-P-N and P-N-P Monolithic

Darlington Power Transistors
60-80-100 Volts, 160 Watts Features:
Gain of 2400 (Typ.) at 10 A (2N6282, 2N6283, 2N6284) Operates from IC without predriver
Gain of 3500 (Typ.) at 10 A (2N6285, 2N6286, 2N6287)
High reverse second-breakdown capability
Monolithic construction

The RCA-2N6282, 2N6283, and 2N6284 and
V CE0 (sus) = 60 V Min. - 2N6282, 2N6285*
the 2N6285, 2N6286, and 2N6287 are
complementary n-p-n and p-n-p monolithic
= 80 V Min. - 2N6283, 2N6286*
silicon Darlington transistors designed for
= 100 V Min. - 2N6284, 2N6287*
general-purpose amplifier and low-speed
switching applications. The high gain of Applications:
these devicesmakes it possible for them to Power switching
be driven directly from integrated circuits. Hammer drivers
These devices are supplied in the JEDEC Series and shunt regulators
TO-3 hermetic steel package. Audio amplifiers
2N6282 2N6283 2N6284

2N6285* 2N6286* 2N6287*
v CBO 60 80 100 V
V CEO (sus) 60 80 100 V TERMINAL DESIGNATIONS
V EBO 5 5 5 V
c 20 20 20 A
'cm 40 40 40 A
'b • 0.5 0.5 0.5 A
PT
*
1><25C o
160 160 160 W
T c >25 C . . . Derate linearly _ 915 .- W/°C
Tstg, TJ -65 to 200 . °r.
At distances > 1/1 6 in. (1.58 mm) from case for 10s max. 235 °c JEDEC TO-3

C
nc
<
< <
._l
6e 6e
•2C3-ZWZ9 92CS-2913I
Fig. 1 - Schematic diagram for 2N6282, 2N6283, Fig. 2 - Schematic diagram for 2N628S, 2N6286, Fig. 3 — Power derating curve for all types.
and2N6284. and2N6287.
207
POWER TRANSISTORS
2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287
ELECTRICAL CHARACTERISTICS, af Case Temperature (Tc) = 2&C Unless Otherwise Specified

VOLTAGE CURRENT 2N6282 2N6283 2N6284
CHARACTERISTIC Vdc Adc 2N6285* 2N6286* 2N6287* UNITS
VCE V B E 'c 'B MIN. MAX. MIN. MAX. MIN MAX.
30 1
'ceo 40 - - 1
-
50 1
mA
60 -1.5 0.5 — —
'CEX 80 -1.5 1 0.5
100 -1.5 0.5
60 -1.5 — 5
T C =150°C 80 -1.5 - 5 -
100 -1.5 5
'ebo -5 - 2 - 2 - 2 mA
V CE0 (sus) 0.1 a 60 - 80 - 100 - V
3 203 100 100 100
hFE
3 103 750 18,000 750 18,000 750 18,000
20a 0.2 - 3 - 3 - 3
V CE (sat) V
10a 0.04 2 2 2
V BE 3 103 - 2.8 - 2.8 - 2.8 V
V BE (sat) 203 0.2 - 4 - 4 - 4 V
h fe
3 10 300 - 300 - 300 -
f = 1 kHz
Ih
fe |
3 10 4 - 4 - 4 -
f = 1 MHz
C ob
V CB =10V,I E 0,
f = 0.1 MHz
2N6282-84 - 400 - 400 - 400

pF
2N6285-87 600 600 600
's/b -
= 1s, nonrep.
30 5.3 5.3 - 5.3 - A
t
R 0JC 1.09 - 1.09 - 1.09 °c/w

8 Pulsed: Pulse duration = 300 jus, duty factor = 1 .8%.
In accordance with JEDEC registration data.
• For p-n-p devices, voltage and current values are negative.
»I0*« COLLECTOR-TO- EMITTER VOLTAGE ( VCE >-3V

io*.
•
— —H-H— —
J
|
1 1 1
(
2N6282,2Ne2S3,2N«2
o ? 2 2N«
\: i .
» io«-
\^
I : ,•> s
i
H :
4
z
u0^^ Z Kfe N
I * vc'
^X" 3.o<
£»'•
O 8 o I0
3-
\\
\l COLLECTOR CURRENT (l e ). MA* '
"""'
o .* 3:
i
i 4 __S " z 1
III
K> 1 III l ill 1
°,o'
4 • • t « • • I 4 • •
0.1 . FREOUCNY (f)-tHl
COLLECTOR CURRENT (I c >-A COLLECTOR CURRENTII c I— l>OR »-«-p DEVICES, VOLTASE AND CURRENT VALUES ARE NEGATIVE
MCS-ttIM MO- 2*134
Fig. 4 — Typical dc beta characteristics for Fig. S— Typical dc beta characteristics for Fig. 6— Typical small-signal current gain for all types.
2N6282, 2N6283, and 2N6284. 2N6285, 2N6288, and 2NS287.
208
T -
POWER TRANSISTORS
2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287

CASE TEMPERATURE ( c ) - »«C 1
(CURVES MUST BE DERATED LINEARLY I
» WITH INCREASE IN TEMPERATURE) § 35
40
^n88TTO!fHfS^p X
^'iH||[[
1 | | 1 1 1 1 1 1 1 1 1 1 | 1
[ 1
Hffl
20 ?M
Z
<
lio- H DC OPERATION 1 20
.?
• S DISSIPATION-LIMITED
S^ is
i «
c
K
D
*
a
§|jj|j|| 1 s/b-LIMITEO g ^ iff 8
l0
9
i t%
3 i- COLLECTOR-TO-EMITTER SATURATION VOLTAGE
« SSI* FOR SINGLE
2 §£
11 [v
CE (,ot>]-v
6
4
^
ggj NONREPETITIVEp
PULSE B FOR p-n-p DEVICES. VOLTAGE AND CURRENT VALUES ARE NEGATIVE
Fig 8- Typical saturation characteristics for all types.

' Si
2 VCE0 ( MAX ) • 80V <2N62S3,2NS2M •Hft
!
V CE0 (MAX)-I00V(2N6284,2N6287
™-::
Mf :
Htfr'"
2 4 6 8 1 2 30 « 60 801 2 4 6 6 1
10 100
COLLECTOR-TO-EMITTER VOLTAGE IVC£ )-V
92CM-29I30
•FOR p-n-p DEVICES, VOLTAGE AND CURRENT VALUES ARE NEGATIVE
-|0 COLLECTOR SUPPLY VOLTAGE (Vc c' s "30 ">6

6
CASE TEMPERATURE (T C )-25'C CASE TEMPERATURE (Tc )-25-C
i c /r B .25o I 1
J BI "IR2
HI
— H1
I 2
'^SX
^
1
2 _| i 1 ,
,|
i
* 6
^+0;
* V •a AT VBE (OFF) DV
!
i
'a
*T V B E (om-o
-0.1
L
1
^ 5 S B Z 4
n .
COLLECTOR CURRENT II C l-A COLLECTOR CURRENT <I C )-A

92CS-29I37 92CS-29I36
Fig. 10 — Typical switching times for 2N6285, Fig. 9- Typical switching times for 2N6282,
2N6286. and 2N6287. 2N6283, and 2N6284.
.209
. . 1
POWER TRANSISTORS
2N6300, 2N6301
8-Ampere Silicon N-P-N Monolithic Darlington Features:
Operation from IC without predriver
Power Transistors Low leakage at high temperature
High reverse-second-breakdown capability
60- and 80- Volt, 75-Watt Types With Gain of 750 at 4 Amperes
Applications:
The RCA-2N6300 and 2N6301 are mono-

Oc Power switching
lithic n-p-n silicon Darlington transistors de- Audio amplifiers
signed for low- and medium-frequency power Hammer drivers
applications. The double epitaxial construc- Series and shunt regulators
tion of these devices provides good forward
and reverse second-breakdown capability.
Their high gain makes it possible for them to TERMINAL DESIGNATIONS
be driven directly from integrated circuits.

TO-21 3MA/TO-66 hermetic packages.
QE 9ZCS-I99I6RI
Fig. 1 Schema tic diagram of 2N6300 and 2N630

Darlington power transistors.
2N6300 2N6301
60 80 V
'CEO- 60 80 V
;
EBO' 5 5 V
8 8 A
16 16 A
120 120 mA
T C <25°C 75 75 W
T C >25°C See Figs. 2 and 3
T„
'stg-
Tj . . -65 to +200 °C
At distances > 1/16 in. (1 .58 mm) from set

ITS 200
seating plane for 10 s max
CASE TEMPERATURE (Tc)-t
KI'Wl
* In accordance with JEDEC registration format JS-6 RDF-2.
Fig. 3— Derating curve for both types.
CASE TEMPERATURE (T C )-2S*C
(CURVES MUST BE DERATED LINEARLY COLLECTOR-TO-EMITTER VOLTAGE (VCE )' 3 V
5 2
'°\"
l
z 6
It
4 *$
z
8 '
if
^
x
**
!
8
K>
2
2
5 \s
i i
COLLECTOR CURRENT!!,.) -A , ac ,. 24MT „

Fig. 4 — Typical dc beta characteristics for both types.
100
* ,
CASE-TEMPERATURE
CHANGE (îT c ).50'C
St
*
a
kl50 V 9 c\io )'C V 9" c
10 " " "100 10 \ k

. '
COLLECTOR-TO-EMITTER VOLTAGE (VC£)- V 92CM-30S26 NUMBER OF THERMAL CYCLES
Fig. 2 — Maximum operating areas for types 2N6300 and 2N6301 Fig. 5— Thermal -cycling rating chart for both types.
210
POWER TRANSISTORS
2N6300, 2N6301
4»
K> COLLECTOR CURRENT llj) • A
ELECTRICAL CHARACTERISTICS,^ Case Temperature (Teh 2S°C Unless Otherwise Specified COLLECTOR-TO-EMITTER V0LTA0E (V CE 1
I
»V
CASE TEMPERATURE (Tc>"25'C

DC DC l.o>
s
CHARACTERISTIC VOLTAGE CURRENT 2N6300 2N6301 UNITS

SYMBOL V A
V C E VEB V B E c IE >B MIN. MAX. MIN. MAX.
30 - 0.5 -
'CEO
40 0.5
60 -1.5 - 0.5 -
'CEX 80 -1.5 0.5
mA IO
'CEX 60 -1.5 - 5 -
FREQUENCY if -MHZ
Tc= 150°C 80 -1.5 5
I
ebo 5 - 2 - 2 mA Fig. 6- Typical small-signal gain for both types.
3 8a 100 100
"FE 3 4a 750 18.000 750 18,000
VcEO<sus) O.ia 60a - 80a - V COLLECTOR SUPPLY VOLTAGE IVCC >' iOV
s
900
4a - - V-V'c'
0.016 2 2
VcE(sat) 8a 0.08 3 3 V 4
VB E 3 4a - 2.8 - 2.8
-
V
V B E(sat) 8a 0.08 4 - 4 J 3
IWel
MHz
3 3 4 - 4 -
i
2
^ V
'
y
f =
Co bo
1
^<s *
f = 0.1 MHz, - 200 - 200 pF \

VCB=10V
h fe
f = 1 kHz 3 3 300 300

Fig. 7 — Typical saturated switching-time
'S/b characteristics lor both types.
t= 1 s. 30 2.5 - 2.5 - A
non rep.
R 0JC - 2.33 - 2.33 °c/w
* In accordance with JEDEC registration data format JS-6 RDF-2.

a Pulsed: Pulse duration = 300 ^s, duty factor = 2%.
BASE-TO-EMITTER VOLTAGE (V K I—V 92CS-*

both types.
f
Id COUICTOR-TO-EMITTER VOLTAGE (V^l'S)* 1 1 1 1 1 1 1 1 1
:
\
s |
6 no
i
o
«
1 as
5 »
1 1 1 1 1 1
1 Vc 00
* '-P
1
T 100'C KM)
I
S-=-4 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Ittt" Tc §
îlobbla'a'cl
£ S 1 1 1 1 1
k 2
loo.icyc^l 1 1 1 1 1
K
3
T»
5.0 ^P^^^gi ijf/fW ft-
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1
t.t
mMIIH
1 [JJ4^H1J-UKtI 1 1 1 1 1 1 1 1 1 1 iTTTn 1 1 1 1 1 1 1 rriri
:
S H •
•ASE-TO-EMfTTERVOLTAOEIV^K—
COLLECTOR-TO-EMITTER VOLTMC (Vet' — COLLECTOR CURRENT (I c l— A
92CS-244
92CS-244M
Fig. 9— Typical output characteristics for Fig_ JO— Typical saturation-voltage characteristics Fig. 11 — Typical transfer characteristics for
both types. for both types. both types.
211
POWER TRANSISTORS
2N6306-2N6308, RCS579
Features:
High-Voltage, High-Current Silicon N-P-N
Fast Switching Speed
Power-Switching Transistors High Voltage Ratings:
VCER - 350 V to 450 V
For Off-Line Power Supplies and Other High-Voltage Switching Applications High Gain at Iq = 3 A
Thermal-Cycling Rating Chart
The RCA-2N6306. 2N6307, 2N6308, and gether with the high gain, low saturation
RCS579 are epitaxial silicon n-p-n power voltage and fast-switching capability of Applications:
transistors with pi-nu construction. They this series of devices, make them parti-
Off-Line Power Supplies
are hermetically sealed in a steel JEDEC cularly suitable for inverter circuits
High-Voltage Inverters
TO-3 package, and differ mainly in volt- operating directly off the rectified 120-
Switching Regulators
age ratings, saturation voltage, and beta volt power line or in a bridge configura-
Motor Controls
characteristics. The exceptional second- tion operating from the rectified 240-volt
breakdown and high voltage ratings, to- line. TERMINAL DESIGNATIONS
E-
MAXIMUM RATINGS, Absolute-Maximum Values: RCS579 2N6306 2N6307 2N6308
*
V CB0 500 500 600 700
VCER(sus)
R B E = 50 SI 400 350 400 450
*
V CE o<sus) 250 250 300 350
* VebO 6 8 8 8
*
JEDEC TO-3
IC 8 8 8 8
* ICM 16 16 16 16
•Ifl 4 4 4 4
* PT
Tcupto25°C 125 125 125 125
Tc above 25°C Derate linearly to 200°C
*
Tstg. TJ = 65 to +200
100
*
TL •
At distance ^1/1 6 in. (1.58 mm) from *

seating plane for 10 s max ^^_^^_^^_ 235 1
•
'x*u
J* \ > 'sS
*2N-Series types in accordance with JEDEC registration data format (JS-6 RDF-1) o 4
8 \ ft
tifc.
-\
NJ 'c
"io m \ •
Y-
Fig. 2 - Thermal-cycling rating chart for

all types.
COLLECTOR-TO -EMITTER VOLTAGE (VC E>»3 V _
6 _
ls6»C
1
<E CASE 1 EMPERA TURE <T :> 25 *C
»- 2
If -SS*
lr°.
6
8
'
8
10 IS.6 41.7
- -_
IOO
250 350
300
I
COLLECTOR-TO-EMITTER VOLTAGE (VcE>— V

i
2 4 « a 2 468
92CS-26934 COLLECTOR CURRENT dc)—
MCS- 26923
Fig. 1 - Maximum operating areas for 2N6306-2N6308. Fig. 3- Typical dc beta characteristics for
all types.
212
POWER TRANSISTORS
2N6306-2N6308, RCS579
ELECTRICAL CHARACTERISTICS. Tq 25°C Unless Otherwise Specified.

CHARACTERISE VOLTAGE CURRENT 2N6306 2N6307 2N6308 RCS579 UNITS
Vdc Adc
VCE VBE «C IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
250 - 0.5 — - 0.5
•ceo 300 0.5 -

350 0.5
500 -1.5 0.5 0.5
'CEV 600 -1.5 - - 0.5 - - mA

700 -1.5 0.5
450 -1.5 2.5 2.5
T C = 150°C 550 -1.5 - - 2.5 - -

650 -1.5 2.5
>EBO -6 2 mA
-8 1 1 1
v CEO (sus ' 0.1 a 250 - 300 - 350 - 250 - V

V CER' SUS *
RgR = 50 £2 0.1b 350 _ 400 _ 450 _ 400 _ V

VebO
lE = 1 mA 6 _ V
"FE 5 3a 15 75 15 75 12 60 12 -
5 8a 4 4 3 3
"be 5 3a - 1.3 - 1.3 - 1.5 - 1.5 V

V BE (sat) 8a 2 - 2.3 - 2.3 - - V
8a 2.67 2.5 2.5
3a 0.6 — 0.8 1 1.5 1.5
V CE <sat) 8a 2 5 - 5 - - V
8a 2.67 5 5
Ihfel 10 0.3 5 - 5 - 5 - 5 -
f = 1 MHz
E S/b -1.5 3 180 180 180 180 mj
L = 40 mH
RqB = 3k ^
's/b
t = 1 s, nonrep. 40 3.15 _ 3.15 _ 3.15 _ 3.15 _ A
C bo
V CB = 10V, - 250 - 250 - 250 - 250 PF
f = 0.1 MHz
'r
V CC = 125V 3 0.6 _ 0.6 _ 0.6 _ 0.6 _ 0.6
V CC = 125 V
t = 25/is 3 +0.6 - 1.6 - 1.6 - 1.6 - 2
p
-1.5 /to
t = 5/JS +0.6 0.8 0.8 0.8

p
3 -1.5
+0.6 - 0.4 - 0.4 - 0.4 - 0.4

V CC =125V 3 -1.5
R 0JC - 1.4 - 1.4 - 1.4 - 1.4 °C/W
.
* 2N-Series types in accordance with JEDEC registration data fomat (JS-6, RDF-1).
a Pulsed; pulse duration = 300 /Us, duty factor<2%.
D CAUTION: The sustaining voltage Vceo' sus and Vcer(sus) MUST NOT be measured on
' a curve tracer. VcEO< sus ' should
be measured by the pulse method (Note "a").
213
V : V A A V
POWER TRANSISTORS
2N6306-2N6308, RCS579
flil .JH^SEF :::
:::!:::
i CASE TEMPERATURE (TC )'2S a C^:|
jli' S b Ijjljtjj
:
; HIS 1 (CURVES MUST BE DERATED LINEARLY V~
2 WITH INCREASE IN T PtH AIU
li C (MAX.) PULSED*! 7 tff
16
PJ!^H;:-|:
4-f|:'-|.-
: :'|::::|:.:.|1!! T j-Lj
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OC OPERATION it~l
^
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1 « DISSIPATION -LIMITED r lf|?jjjll;:P If: N ii' •'vJi'-i* i :H: :rf:
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l-i iiir ll 0!! r.':'
IS
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P• Ife r~ ?.~: T Hff ::a
8 .:J -f— :• ~rv*

COLLECTOR CURRENT (Ic>—
g ^*F0R SIN6LE
1. J
-... rrtf.
-,
Ul J NONREPETITI 'E! i ! : :
Fig. 5 Typical collector-to-emitter
-
1 PULSE ••;; ;:
v
Cl
3
:
4 i
saturation-voltage character-
O i:|L
u : istics for all types.
;
f *o\
::!
2 i 1
1
-v.. : ;::: 1000
1 '
.
•
•
fUAV 1 ' f -IMHz

]'
'
lYCEO >"««•<-« 50V T 4

6 EMITTER OPEN
;5£
0.1
a 5=
—a N=T|r^_j_J_^ J_
*
: X J .. ;t|
6
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ina Bisys *hs
:•: :•:: :.= :;:i
$ BfMNf H*W
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itsisst
hiiisir il;i::îiir|
;
enm | 1 B 2
i-Li. -
2 4 6 8 s 6 8 « 8 p 100
1 K> 1 16 41.7 100 25 3 « I000
COLLECTOR-TO-EMITTER VOLTAGE <Vce> — S e
92CS-26322 4
t> 4
Fig. 4 Maximum operating areas

- for RCS579.
5 2
O
10
COLLECTOR-TO-BASE VOLTAGE (VC B>—
Fig. 6 - Typical output capacitance for

all types.
<
6
*
I!i]
'is
jig jii
« fff
#£]:!::
Aft** M 1
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8
COLLECTOR SUPPLY VOLTAGE <VC C>"I25 V
CASE TEMPERATURE (Tc)'25*C
OUTY CYCLE % 1
I impffl
rfll
. 6 iBI-Ic'S. -IB2-IC/2
Hb fe m*"v vi !i
fff Mia ^
s1b££ !l:r
1 4
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fStn lS Ifffig 1:3 5 2
I' t,
t 6
l
r
>>-20mA
i .
>l
2
CASE TEMPERATUR :<tc > 25 •C: 'd
rUfffffffH
6.1
025 0.5 0.75

COLLECTOR -TO-EMITTER VOLTAGE (Vfe)— COLLECTOR CURRENT — V
92CS-2B»2« 92CS-26S25
Fig. 7 - Typical output characteristics for Fig. 8- Typical saturated-switching-time Fig. 9 - Typical transfer characteristics
all types. characteristics for all types. for all types.
214
POWER TRANSISTORS
2N6326, 2N6327
High-Current, High-Power, High-Speed N-P-N Features:
A
Specification for hpg and V CE (sat) up to 30
Power Transistors Current gain bandwidth product
f
T - 3 MHz (min.) at 1 A
The RCA-2N6326 and 2N6327 are epitaxial- regulators, dc-to-dc converters, inverters, and Low saturation voltage with high beta
base silicon n-p-n transistors intended for a solenoid (hammer)/relay drivers. High dissipation capability
wide variety of high-power, high-current These devices differ in maximum voltage 200 mJ Eg/|, characteristic
applications, such as power-switching circuits, JEDEC TO-
ratings. They are supplied in
driver and output stages for series and shunt
204MA hermetic steel packages.

2N6326 2N6327
*V CB » 80 V
*V CE0 (sus) 60 80 V
*
v EBO 5 V
30 A
*'c
«° A
*'CM
*I B 10_ A
15 A
bm
*P T
At Tc < 25°C 200 W JEDEC TO-204MA
AtT c > 25°C .... Derate linearly 1.15 W/°C
See Figs. 1 and 2
*Tstg ,Tj 65to200 °C
At distance > 1/32 in. (0.8 mm) from

seating plane for 10 s max 230 °C
NOTE: CURRENT DERATING AT CONSTANT VOLTAGE
APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION .
* In accordance with JEDEC registration data format JS-6 RDF-2. AND Is/k-LNITED PORTION OF MAXIMUM-OPERATING ;
AREA-CURVES. DO NOT DERATE THE SPECIFIED VALUE

FOR Ic MAX.
SO 75 100 125 ISO

CASE TEMPERATURE (Tc)— 'C
Fig. 2- Derating curves for 2N6326 and 2N6327.
too;
•
fc C4S f 1 1
O
«Sv1
Ss- rv5
fr
*•
Sioo-
*
i : k£5
2 4 ^vo *
i 2
O C
5 4
\
*
k
S 2
O 1
« p 2 2 t 1 •
100
COLLECTOR CURRENT (t c )-A
92CS-29B43
COLLECTOR- TO-EMITTER VOLTAGE (VCE )-V
Fig. 3— Typical dc beta characteristics as a func-
92CS- 29845
tion of collector current for 2N6326 and
Fig. 1 - Maximum operating areas for 2N6326 and 2N6327. 2N6327.
215
A
POWER TRANSISTORS
2N6326, 2N6327
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc ) = 25°C 1
e
COLLECTOR SUPPLY VOLTAGE (Vfce)-30V
IC/lB'IO
Unless Otherwise Specified 6
4.
TEST CONDITIONS LIMITS i "

,
CHARAC- VOLTAGE CURRENT r
2N6326 2N6327 UNITS

TERISTIC Vdc Adc
VCE V BE 'c b Min. Max. Min. Max.
S «
60 - 0.5 - % •
'CES 80 0.5 2 *
'd
'CES 30 5 —
z
Tc = 150°C 40 _ 5
UJ
a
— — mA 0.01
30 1 9
1
2 4 8
KX
'CEO 40 1 COLLECTOR CURRENT (Ic)—
'ebo -5 - 0.5 - 0.5

Fig. 4 — Typical delay-time and rise-time
4 5a 25 25 characteristics as a function of
"FE 4 15 a 12 12 collector current for 2N6326
and2N6327.
4 30 a 6 30 6 30
V CE0 (sus) 0.03 60 - 80 -
4 15 a — 2 — 2
VBE
4 30 a 4 4
V
15 a 2 - 1.5 — 1.5
V CE (sat) a
30 7.5 3 3
's/b 10 COLLECTOR SUPPLY VOLTAGE (Vfcc)-SOV

- - I8|— iBa
t
p
=1 s 20 10 10 A X 6 IC/lB'IO
CASE TEMPERATURE (TC ).25'C
nonrep. J-
4
E S/b s
2
L= 125 /iH, -1.5 10 6.25 - 6.25 - 4i
R BE = 51 n C 1
*JlJ
mJ o 8
L = 20mH,
4.47 200 - 200 - £
,,
R BE = 100fi
h fe|
l
10 1 3 - 3 -
f = 1 MHz £ 2
h fe O.I
10 1 30 - 30 - Z > 1
>. 1 s > K>
f = 1 kHz COLLECTOR CURRENT (I c )—
ton v Cc = 15 2 0.45 (Typ.) 0.45 (Typ.)

Ms
l
off 30 15 2b 0.9 (Typ.) 0.9 (Typ.) Fig. 5— Typical storage-time and fall-time
R 0JC 20 5 - | 0.875 - | 0.875 °C/W characteristics as a function of

collector current for 2N6326
*ln accordance with JEOEC registration data format JS-6 RDF-2. and2N6327.
a Pulsed; pulse duration = 300 duty factor = .8%.
tis, 1
0|
MLLECTOR-TO-EMITTER VOLTAGE vCE'' 4v ftf}ttf}tttffitffl '
30
,. 'Ul i/l
1 1 fn Itlllllt rtTTrn
< 25 JIlilM^fK
M III [ j |[ f ] | j 1 11 1 ^HSiff^^^T^T^^Ti 1 ! 1 n 1 1 1 1 1 1 1 1 1 1 H 1 1 i i i 11 ! 1 i 1 1 II 1 1 1 M^
1- 2°
lllllllllll ilys'il 1 1 1 1 1 1
o
«
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MMiM^fMiii
IIIIIIIIIIIIH lllft^lllllllllllllllllllilllilllllllllllllllllilllllll
H
a
fBH
io
0.2 0.4 0.6 0.8

05 1.5
BASE-TO-EMITTER VOLTAGE !VbE>~

I
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v^ltcO] —V
Fig. 6— Typical transfer characteristics for Fig. 7 — Typical saturation voltage characteristics for
2N6326 and 2N6327. for 2N6326 and 2N6327.
216
V — > '
POWER TRANSISTORS
2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001

8- and 10-Ampere N-P-N Darlington Power Transistors
For Use as Output Devices in Switching and Amplifier Applications Features:
40-60-80 Volts, 90-1 00 Watts
Operation from IC without predriver
The RCA devices are monolithic n-p-n

Low leakage at high temperature
High reverse-second-breakdown cap-
silicon Darlington transistors designed
ability
for low- and medium-frequency power
applications.
struction of these devices provides
The double epitaxial con-
< Applications:
good
forward and reverse second-breakdown Power switching
capability; their high gain makes it pos- Audio amplifiers
sible for them to be driven directly from Schematic diagram for Series and shunt regulators
integrated circuits. all types. Hammer drivers
2N6385 2N6384 2N6383 2N6055 2N6056 RCA1000 RCA1001
*
v CBO
Vcer(sus)
R BE = 100 n
*
v CEO< sus '
V CEV< SUS '
V BE = -1.5V
*
V CEX
V BE = -1.5V,R BB = 10012
JED EC TO-204MA
*
v EBO
*'C 10
'cm 15 16
0.25 0.12
*P T
T C <25°C.
T C >25°C • Derate linearly to 200°C
*
T stg. Tj. . . 65 to +200
At distance > 1/32 in. (0.8 mm) from

seating plane for 10 s max
*2N-Series types in accordance with JEDEC registration data format JS-6 RDF-2.
im —
tV.".
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COLLECTOR-TO-EMITTER VOLTAGE (V CE )— i
92C5-20692R COLLECTOR^ TO -EMITTtH VO*,TA«t ( v pt — V

Fig. 1 — Maximum operating area for 2N6383—2N6385. 2 - Maximum
C
operating area for 2N6383 - 2N6385 at
F/ff. T c = 100° C.
217
POWER TRANSISTORS
2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001

100
ELECTRICAL CHARACTERISTICS, At Case Temperature, Tq - 2S°C Unless Otherwise Specified
TEST CONDITIONS LIMITS i

Vdc Adc 2N638S 2N6384 2N6383 UNITS *
O
4
CASE-TEMPERATURE
VCE v E p V„E ic 'B
MIN. MAX. MIN. MAX. MIN. MAX. CHANGE (^4T C 1'50'C
80 1 - S ,,1
\
60 - - 8 \
'CEO 1
"\
40 i
1 | \
80 -1.5 0.3
J U50 U25 # c\l00*C
\ 5»
60 -1.5 - - 0.3 -
4 I 6 8 5 B
40 -1.6 0.3 mA , i I '
4
'
5 m
"CEV
80 -1.5 3
T C -150°C 60 -1.5 - - 3 -
- Fig. 3- Thermal-cycling rating chart for
40 -1.6 3
2N6055-2N6056, 2N6383-
'ebo 5 _ 5 _ 5 - 5 mA
- - 2N6385.
v CEO (su, l 0.28 80 - 60 40
Vcer(sus) 100
R BE *100ft 0.2» 80 _ 60 _ 40 _ V 8
Vcgylsus) -1.5 0.2« 80 - 60 - 40 -

1
•
»FE 3 5» 1000 20,000 1000 20.000 1000 20,000 S CASE-TEMPERATURE CHANGE

v
3 10" 100 100 100 4 X .aToWM'c
I
VBE - - - V
3 5« 2.8 2.8 2.8 —o
3 10" 4.5 4.5 4.5
V C g(s»t) 5« 0.01» - 2 - 2 - 2 V \\
*
10» 0.1« 3 3 3 o \
vF -10 -• 4 - 4 - 4 ys't
ISO'C , VZS'CVOO'C
10
f - 1 kHz 5 1 1000 _ 1000 _ 1000 _

lhf.l
t?CS->999
f - 1 MHz 5 1 20 _ 20 _ 20 _ Fig. 4 - Thermal-cycling rating chart for

Cobo V CB l
E-0 - 200 ..
_ 200 - 200 PF RCA 1000. RCA 1001.
f - 1 MHz -10
COLLECTOR-TO-EMITTER VOLTAGE (Vfcjl- JV
s/b 76 0.22 6
s 4
t-1 s, 66 - 0.55 - - A %
non rep. 30 3.33 3.33 3.33
R0jc - 1.75 - 1.75 - 1.75 °C/W 2 io"

^^ ",
«^- —
8 Pulsed: Pulse duration - 300 /Js, duty fector - 1.8%.
J*
4 ~ >
V
^
% L,
* 2N-S*ries types in accordance with JEDEC registration data format JS-6 FtDF-2. V M
jftf\
i
' ~£\ ^
z « \\
K)
2
i9
}y »ii
COLLECTOR CURRENT (I e l —A ttcs-iermn
Fig. 5 - Typical dc beta characteristics

for all types.
CASE TMROWTURI (TC >'BVC |
COLl^CTOR-TQrEWTTER VOLTAM (*fcr)-5*

-» *
1 * J
I
s M 3 ,o»
•to a*
14
\ !
s
K>
1 K>*
T
UijA]
BUos
{ t
t 4 * a »
COLLECTOR-TO-EMITTER VOLTASE (Vc E >-V
BASE-TO-eMTTER VOLTAGE (V M I— V FREQUENCY {()— MHl
Fig. 6 - Typical input characteristics Fig. 7 - Typical output characteristics Fig. 8 - Typical small-signal gain for
for 2N6383-2N6385, 2N60S5. for 2N6383-2N6385, 2N60S5, all types.
2N60S6. 2N60S6.
218
' A A
POWER TRANSISTORS
2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001

ELECTRICAL CHARACTERISTICS. At Case Temperature, Tc = 25°C Unless Otherwise Specified

DC DC
CHARACTERISTIC VOLTAGE CURRENT 2N60S5 2N6056 RCA1000 RCA1001 UNITS
V A
V C E VEB VBE ic e 'B MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
30 n _ 0.5 _ _ _ 0.5 _ _
'CEO - - - - mA
40 0.5 0.5
'CER 60 - - - - - 1 - -
R BE = 1 kfi 80 1
s
'CER 60 - - - - - 5 - - mA 4 ' WM
R BE = 1 kfj 80 5 s Ipllllj,
Sffias
Tc = 150°C SSocrerMVjri-iooo
60 -1.5 _
'CEX
0.5
ll
'CEX
T C = 150°C
80
60
80
-1.5
-1.5
-1.5
-
-
-
-
-
5
-
-
0.5
5
-
-
-
-
-
-
-
-
g
I
g
1—
-2 3
2
=c SE TEMPERATURE
g m 00 ct
'EBO 5 - 2 - 2 - 2 - 2 mA S
3 8^ 100 - 100 - - - - -
hFE 3 4a 750 18.000 750 18.000 750 - 750 - i so'c'fft
3 3<» - - - - 1000 - 1000 -
v (BR)CEO 0.1 a - - - - 60 - 80 - V 2 4 6 6 to 12
- COLLECTOR CURRENT (I c l—
V CE0 (iu.) 0.13 603 - 803 - - - -
V CER (susl Fig. 9 - Typical saturation charac-
R BE = 100 Si 0.1» 60s - 803 - - - - - V
- - - - - - teristics for 2N6055, 2N6056,
v CEX lsusl -1.5 0.13 603 803
0.012 - - - - - - RCA1000, RCA1001.

3a 2 2
V CE (sat) 43 0.016 - 2 - 2 - - - - V
83 0.04 - - - - - 4 - 4
8a 0.08 - 3 - 3 - - - -
3 33 _ _ _ _ _ 2.5 _ 2.5
v BE
3 43 _ 2.8 _ 2.8 _ _ _ _
V
V BE (sat) 8a 0.08 - 4 - 4 - - - -
Ihfel
3 3 4 4
f » 1 MHz
13
c obo ffi»oJts*c+
f = 0.1 MHz, - 200 - 200 - - - - pF T 130-C
V CB = 10V
h fe
3 3 300 300 S 10 iUlOOO.iB'C
f = 1 kHz
'S/b
33.3 3 - 3
A 11 1 i 1 I 1 1 1-lffilC "B ITORCED Hfc)»I0OO|-| 1 1 1 1 1 II 1
Hf
40 - — 2 — — — — — I Tc -I90*C
non
1 1 1 1 1 1 1 1 JtH 1 1 1 1 1 1 1 1 1 1 1 1 1
rep. a 3
" 1.75 " 1.75 - 1.94 " 1.94 °C/W
R0JC
*
In accordance with JEDEC registration data format JS-6 RC
1
Pulsed: Pulse duration = 300 /is, duty factor = 2%
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v ct (toll] —V

92CS-206M
Fig. 10 - Typical saturation characteristics

for 2N6383-2N6385.
COLLECTOR-TO-EMITTER VOLTASE (VcE>- 3 V COLLECTOR SUPPLY VOLTASE <VCC ).20V
IB, -I B7 'IC' 500 TC'2 5 'C

.
33
T
3
.If
-
ol j
I I
I
J 23
£ io
° 7.5
p
<'-.,
ti
^r£
I
X
*
13
+[i
u 5
2.9 J^
0.5
:
TFH- mill! : 1L.
mi'
BASE-TO-EMITTER V0LTA6E (V BE ) V COLLECTOR CURRENT II C ) — -hmori
Fig. 1 1 - Typical transfer characteristics Fig. 12- Typical saturated switching-time

for 2N6383-2N6385, 2N6055, characteristics for 2N6383-2N6385,
2N6056. 2N6055, 2N6056.
219
POWER TRANSISTORS
2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001
4 6
^v —A
COLLECTOR CURRENT (I/O
92C3-20M»RI
Fig. 13 — Maximum operating areas for 2N6055 and 2N6056.
220
POWER TRANSISTORS
2N6386, 2N6387, 2N6388

8- and 10-Ampere N-P-N Darlington Power Transistors
60-80-100 Volts, 65 Watts
Features:
Operates from IC without predriver

These RCA devices are monolithic n-p-n the 2N6667, and the 2N6388 is comple- Low leakage at high temperature
silicon Darlington transistors designed for mentary to the RCA8203B and the High reverse second-breakdown capability
low- and medium-frequency power appli- 2N6668. Applications:
cations. The double epitaxial construction
Power switching
of these transistors provides good forward
Hammer drives
and reverse second-breakdown capability;
their high gain makes it possible for them to
Audio amplifiers
be driven directly from integrated circuits.
These devices are supplied in the JEDEC TO- TERMINAL DESIGNATIONS

220AB straight-lead version of the VERSA-
WATT package. Optional lead configurations
are available upon request. For information,
contact your nearest RCA Sales Office.
The 2N6386 is complementary to the

RCA8203 and the 2N6666, the 2N6387 92CS-275I9
is complementary to the RCA8203A and
BOTTOM VIEW
Fig. 1 - Schematic diagram for all types. JEDEC TO-220AB

2N6386 2N6387 2N6388
VCBO •
40 60 80
Vcer(sus)
RBE = 100 ft
40 60 80 V
COLLECTOR-TO-EMITTER VOLTA6E (Vrr ). 3V
VCEO<sus) 40 60
• •
80 V
VcEV(sus)
Vbe = -1.5V 40 60
"
80 V u l0
VEBO • •
5 5 5 V §1
"
^
ic
t
-^
8 10 10 A z
S 5
'CM
$\H*
15 15 15 A " loj
IB U25 0.25 0.25 A o 6
PT
Tc<25°C 65
a
^
65 65 W
Tc>25°C Derate linearly to 150 C io*
0. 2 * b •
r stg» K)
Tj -65 to +150 °C COLLECTOR CURRENT (I c > —A
2 100
ri_ At distances > 1/8 in. (3.1 7 mm)

from case for 10 s max 235 °C Fig. 2— Typical dc beta characteristics
2N- Series types 2N6386, 2N6387, and

for
in accordance with JEDEC registration data format JS-6 RDF-2.
2N6388.
CASE T EMPERATURE 1TC )-2»'C

[fttttttllllllllllll
COLLECTOR-TO-EMITTER VOLTAGE (VCE )'5V

J CASE TEMPERATURE (Ti-)-2S*C
T
° IO
!
w
£ 14 BêcuRREHLoSJ^
§ 12
IIIIIIIIIII'oâtS
IO
2
i
1 io 6
lllllllllll»»4ffl
•
i a
% IllllllllllliJaUm
2
2 Ba9§
1U
4 6 8-
K>*
2 4 6 8 .
5 2 4 6 8
IO
lO K 2 4 * t IO 12 H
92CS-26424 FREQUENCY (f) — MH! COLLECTOR-TO-EMITTER VOLTA0E (VCE I-V
Fig. 3— Thermal-cycling rating chart for Fig. 4 — Typical small-signal gain for Fig. S— Typical output characteristics for
2N6386, 2N6387. and 2N638& all types. 2N6386, 2N6387, and 2N6388.
221
POWER TRANSISTORS
2N6386, 2N6387, 2N6388

ELECTRICAL CHARACTERISTICS,^ Case Temperature (Tq) =2S°C Unless Otherwise Specified
15
CHARACTERISTIC VOLTAGE CURRENT 2N6386 2N6387 2N6388 UNITS

SYMBOL Vdc Adc
V C E vbe c IB MIN. MAX. MIN. MAX. MIN. MAX. S 10 1 1 1 1 1 1 1 1 I//1 U4i '°°° ,25'C
80 1
60 - - 1
- yPic/'B (FORCED hFE'" OOP
•ceo TC .I25'C
40 1
J 5
80 -1.5 0.3
ICEV 60 -1.5 - - 0.3 - mA

40 -1.5 0.3 in inn mitt
80 -1.5 3
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v CE I sot —
T C =125°C 60 -1.5 - - 3 - 9ZCS-20S94
)J
40 -1.5 3
- - - Fig. 6— Typical saturation characteristics for
>EBO 5 5 5 5 mA
2N6386, 2N6387, and 2N6388.
v CEO< sus )
0.2a 40 - 60 - 80 -
VCER(s us >
- - 80 - V
0.2a 40 60
rbe = 100 n
-1.5 0.2a 40 - 60 - 80 -
V CEV( SUS >
3 3a 1000 20,000
3 5a 1000 20,000 1000 20,000 T
*FE 3 8a
10a
100
100 100
"^125
v^
3 K
3a
£ l0
±^>Wt>
Ftftpff-
l 1 1 1 1 1 1
1"
3 2.8
3 5a - - 2.8 2.8 ° 7.5 II 1 l^ .fcrfllf-nilllllllllllll -
VB E - V 1 1 1 1 1 1 1 1 1 1 1
3 8a 4.5
10a 4.5 u 3 nrtlfi:
3 4.5
3a 0.006a 2 2.5
5a 0.01 a - 2 - 2
VcE(sat) - V
8a 0.08a 3
10a 0.1a 3 3 BASE -TO- EMITTER VOLTAGE (VeE> v
-8a - 4 - — 92CS-Z070IRI
vF V
-10a 4 4 Fig. 7 — Typical transfer characteristics tor
h fe 2N6386, 2N6387, and 2N6388.
f =1 kHz 5 1 1000 1000 1000
f = 1 MHz 5 1 20 20 _ 20 _ (VCC )-20V

COLLECTOR SUPPLY VOLTAGE
Cob I B| --182 Ic'SOO,Tc -25'C

35
V C B = 10V. - 200 - 200 - 200 pF
f = 1 MHz 3
Jf
'S/b 2.3
t = 1 s, honrep. 25 2.6 _ 2.6 _ 2.6 _ A

- 1.92 - 1.92 — 1.92 OC/W i «
R0JC X
IS
/
a Pulsed: Pulse duration «
* In accordance with
300
JEDEC
u.s,duty factor = 1 .8%.
registration data format JS-6 RDF-: «*"
^
*^« ~—
•~~.
Jt,
0.5 "
u.
1 0.
2 « • * H
COLLECTOR CURRENT (I c > — -i 8 9S<
Fig. 8— Typical saturated switching-time

2N6386,
characteristics for
2N6387, and 2N6388.
222.
POWER TRANSISTORS
2N6386, 2N6387, 2N6388
COLLECTOR-TO-EMITTER VOLTAGE (VC E> —V
Fig. 9 - Maximum operating areas for 2N6386, 2N6387, and 2N6388 at Tc = 25 C.
4 CASE TEM PERATURE (TC )«l00*CiJ;; iHiiiiiHilililîiilii-ltlv

-^^,|„„|.„,[||||i|,[
IJIIP
2N6387, l ,,||,, T,|,,|
«s«IC (MAX.) l |ii
2 2N6388I: *~ PULSE OPERATION*^ -—PULSED (ALL TYPES)-4- N •

r
«• (* * » ::;l:-.. : 1 ::
-t 1
:
3* ^^' JsP^
10 ^jp i
i
;rt ,
8
6 B
w tp !^
lis N6386<
Sri? ;:^b ec; r_=±i:i «s Sri?
&Sfei- NiNc^ tJtJiJtT TR* n^r
;
"iff
4
I C (MAX.
•«:|.
*-
JSO
:
&mt1= T^ """ft -\
i|!
sliljtl
ili !-::
< CO YTI IU0os_ -J-ifi

1 2 is SSi 1 13 ÎlliU:
U :
5:-
H
iiH
'i :
*lPl
V'---W&
£
2
i
8
2?
— is/n-i jmitedA is
6
3 *F0R SINGLE i
M0NREPET1TIVE i
| ^jfflH
4 . i
g
i-
PULSE ? :
o
kj
t-m,
It
T'-
—
-h h"**^}
ii
1
O
o
2 j si;
- = *} HI
0.1
8
6
Ml NpI
VCE0 (MAX.)-40\M2N6386)|j|
4
V^(IMX>60V (2N6387')1
iili
VC E0<MAX.).80V(2N6388)
2
si BHl "tro ij:: in ^ft
0.01
6 8 2 4 6 8
10 100
Fig. 10 - Maximum operating areas for 2N6386. 2N6387, and 2N6388 at Tc = 100 C.
223
. V
POWER TRANSISTORS
2N6420, 2N6421, 2N6422, 2N6423

High-Voltage Medium- Power Silicon P-N-P Transistors
Features:
For High-Speed Switching and Linear-Amplifier Applications
V (sus) = -175
CE0 V max. (2N6420)
The RCA-2N6420, 2N6421, 2N6422, and operational amplifiers, switching regulators, = -250 V max. (2N6421)
2N6423 are epitaxial silicon p-n-p power converters, inverters, deflection stages and = -300 V max. (2N6422)
transistors with high-voltage ratings and high-fidelity amplifiers.
= -300 V max. (2N6423)
fast switching speeds. Typical applications JEDEC
These types are supplied in steel Large safe-operating area
for these transistors include high-voltage
TO-213MA hermetic packages. Thermal-cycling rating

2N6420 2N6421 2N6422 2N6423
* V CB0 -250 -375 -500 -500
V CE0 ($u$) -175 -250 -300 -300
' V EBO
* ~1
'C
* -5
'CM
* -1
|b • • •
T C <100°C,V CE <50V 20
* Tc < 25°C, <40V
V CE 35
^T c < 25°C, >40V
V CE See Fig. 1 JEDEC TO-213MA
*T C > 25°C,V CE >40V See Figs. 1 S3
* Tstg ,*Tj -65 to +200
* T >-
At distances ^1/32 in. (0.8 mm) from case
for 10 s max
-K>8
6 (CURVE MUST BE DERATED LINEARLY
* In accordance with JEDEC registration data. 4
2
I
I LI*. I 1.1.
< XC MAX.
^Spfc.
|
I-..
o 8 CM
N^
1
s •
at
§
2 4
"-0.I
'
V«i L
£ zvo
u 4
i\
8 * VCE0 MAX "ITS V (2N6420I
"ill
— VCE0 MAX.<-250V(2N642I)
• _ V CE0 MAX. — 300V (2N6422,2N6423)=±±f
4
! • ! 4 4 4 • 1
- -» -100 000
COLLECTOR-TO-EMITTER V0LTA9E (
CE )-V
92CS- 50J42
Fig. 2 — Maximum operating areas for all

types, at T = 100 C.
c
NOTE: CURRENT DERATING AT CONSTANT VOLTA0C

APPLIES ONLY TO THE DISSIPATION- LIMITED PORTION
AND I s /t-LMITED PORTION OF MAXIMUM-OPERATINO-
AREA CURVES DO NOT DERATE THE SPECIFIED
VALUE FOR Ic MAX.
BO ITS ZOO
4 6 8 1 2 4 6 8.L- 2 CASE TEMPERATURE (Tc)-t
COLLECTOR-TO-EMITTER VOLTAGE(VCE)- V
Fig. 3 — Derating curves tor all types.
92CM- 30343
o
Fig. 1 — Maximum operating areas for all types at Tq = 25 C.
224
POWER TRANSISTORS
2N6420, 2N6421, 2N6422, 2N6423

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC)-25°C
I I I I

* s Tj MAX.- 200* c
I
1 I
TEST CONDITIONS LIMITS 7- 2
z I
^S^
CHARAC- VOLTAGE CURRENT 2N6421
2N6423 Units 5 I0--
2N6420 <* „'
TERISTIC Vdc Adc 2N6422 5» *
^v 1
VC E VB E b Min. Max. Min. Max. Min. Max. p^'ca.

•c
* iV \^>.C
* -150 - -10 - -5 - -5 \%
'ceo
>
'CEX -225
2N6421 -340
2N6422 -450
1.5
1.5
1.5
-
-1
-
-1
-1
-
mA
a
10
MX A 8
|\
"lio
NUMBER OF THERMAL CYCLES (THOUSANDS)
2 * I
'lOOO
I
-450 1.5 -2
Fig. 4 - Thermal-cycling rating chart for all types.
• ICEX -225 1.5 - -3
Tc=15<fC -300 1.5 - -3 - -5
COLLECTOR -Tr -EMITTER VOLTAGE (Vrpl — 5V
• 6 - -5 - -0.5 - -0.5
'EBO
-0.1 a 40
l Ml l
hFE -10 40 40 s CASE TEMPERATURE <TC )' ISO'C
-10 -0.5a 40 200 M N

T C -2S'C
* -2 -0.75* 10 100 \
s
i :
-10 -0.75* 30 150 ^
* -2 -1« 8 80 \
• -10 -1« 10 25 100
\\
vBe -10 -1« - -1.4 - -1.4 - -1.4
i
* \
^
-0.75a -0.075 - - -1.8 - X 1 l'
* V BE (sat) -1« -0.1 -1.4 -1.4 ! i ••„
-0.75a -0.075 - -1
V CE (sat) _ _ V
-ia -0.125 -5 -0.75
* -0.05a -300 Fig. S— Typical dc beta characteristics for all types.
VCE0(sus)b -175
2N6421 -0.05a - -250 -
2N6422 -0.05a -300 ; COLLECTOR- TO-EMITTER VOLTAOE (VCE>— >OV
CASE TEMPERATURE (Tc)'ZS*C
2 40
-100 -0.15 - -0.15 - -0.15 - A
's/b 1 3,
* 30
Ihfel E
= 5MHz -10 -0.2 2 2 - 3 -
f
1 M
* f = 1 kHz -30 -0.1 25 350
i 20
cobo ]
V CB =10V - 180 - 180 - 180 pF l
f=1MHz 1
* c -0.75 -0.075<» - 0.5 9

tr
-1 -0.1«i _ 3 _ '
S • B 6
-0.75 -0.075* - - - 6 COLLECTOR CURRENT (I c I- A

* C _ MS
h -1 -0.1«l 4
Fig. 6— Typical gain-bandwidth product for all types.
-0.75 -0.075«1 - — 3
• c
tf -1 -0.1<* _ - 3
-10 -1 - 5 - 5 "C/W
*
R 0JC
In accordance with JEDEC registration data.

M- cv cc --200V,t -20|i*
p
< d-|
•Pul»«d: pulse duration - 300 m*. duty factor 2%. B 1 " 'B 2
CAUTION: The sustaining voltage V q(sus) CE
MUST NOT be measured on a curve tracer.
O -OS -I -13 -2
COLLECTOR CURRENT U c l— «a-l,*»
Fig. 7 — Typical saturation-voltage characteristics
for all types.
.225
POWER TRANSISTORS
2N6420, 2N6421, 2N6422, 2N6423

COLLECTOR- TO-EMITTER VOLTMC (VC (l a -9V {$} wtrirSS mbtc'•*& *ut»/.
COLLECTOR WPPLV VOUMt t¥ce)--»OOV
CMC TEMPERATURE (Tcl>tS* C

. t
1 *
tf -*
Wf 1 fl^B =
M
i 1.1
"''
1 Hill llfiftll FT I II ^^H
ji
ft rtl.tilii *^""rfr fitftT iTTTttt.ifll 1 If
-O.S
PJalll
lf*Mlllllllllllllllllllllllllllllllllllll^ffl
collector current ciei-*
ttet-i»iiT«i
MSE-TO- EMITTER VOLTAOE IV K >— V MC ».|$tT4 COLLECTOR CURRENT (If)—*
Fig. 9- Typical storage time characteristic for MCS-I9MOK2

Fig. 8- Typical transfer characteristics for all types.
all types. Fig. 10 — Typical turn-on time and fall-time
226
POWER TRANSISTORS
2N6477, 2N6478, RCA3441, RCA6263

Hometaxial-Base, Medium-Power Silicon Features:
N-P-N Transistors Low saturation voltages

High dissipation ratings
Designed for Medium-Power Linear and Switching Service Thermal-cycling rating curves
in Consumer, Automotive, and Industrial Applications

Applications:
RCA 2N6477 and 2N6478 are hometaxial-base silicon n-p-n
to second breakdown over a wide range of operating conditions. Series and shunt regulators
transistors intended for a wide variety of medium-to-high TheVERSAWATTcasehasa proven thermal-cycling capability.
power, high-voltage applications. These devices, which are This capability is assured by real-time quality controls in our
voltage extensions of the 2N5298 family, are especially useful All these types are supplied
Power switching circuits
manufacturing locations.
in vertical output stages in color and black-and-white TV. The in the JEDEC TO-220AB straight-lead version of the Solenoid drivers
units differ in voltage ratings and in the currents at which para- package. They are also available on special order in a variety of Vertical output stages in color
meters are controlled. lead-form configurations. Two popular variations have leads andB/WTV
formed to fit TO-66 sockets (specify formed lead No. 6201)
RCA3441 and RCA6263 are silicon n-p-n transistors intended or printed-circuit boards (specify formed lead No. 6207).
for a wide variety of high-current applications. The hometaxial- Detailed information on these and other VERSAWATT outlines TERMINAL DESIGNATIONS
base construction of these devices renders them highly resistant may be obtained from your RCA Sales Office.
MAXIMUM RATINGS. Absolute Maximum Values:

2W8477 2N8478 RCA6263 RCA3441
COLLECTOR TO BASE VOLTAGE v CBO
COLLECTOR TO EMITTER SUSTAINING VOLTAGE:
With external baseto-emitter resistance (Rr E ) = 100 SI V CER<»
With base open v CEO'«
With base reverse biased V BE - - 1 5 V V CEV („
BOTTOM VIEW
EMITTER TO BASE VOLTAGE v EBO
CONTINUOUS COLLECTOR CURRENT
JEDEC TO-220AB
CONTINUOUS BASE CURRENT
TRANSISTOR DISSIPATION:
At case temperatures up to 25°C Derate Uneerlv to ISO C
At case temperatures above 2S°C
1.8 1.8
TEMPERATURE RANGE Derate linearly at 0.0144 W/*C
Storage and Operating (Junctionl °C
PIN TEMPERATURE (During SolderingI
At distances > 1/32 in (0 8 mml Irom seating plane for
* 2N- Series types in accordance with JEDEC registration data format JS-6 RDF-2.
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tc) = 2S°C unless otherwise specified 100,
TEST CONDITIONS LIMITS *

CHARACTERISTIC SYMBOL VOLTAGE CURRENT UNITS 1 *
2N6477 2N6478
Vdc Adc
S*.
V CE V BE 'c >B
MIN. MAX. MIN. MAX.
V^
Collector-Cutoff Current: 80 - 2 - I » <'i
L sfc
\\\
With base open 'CEO 100 2
-8 s,
With base-emitter 130 -1.5 - 2 - o
junction reverse-biased 'CEV 150 -1.5 2
mA \
z O.
- -
AtT c - 150°C 'CEV
120
140
-1.5
-1.5
10
10 \\ Va V5
>Kj
^V
'ebo
-5 - 2
-
- 2
-
mA
1
^ \
Voltage: V CE0 (sus) 0.1* 120 140 NUMBER OF THERMAL CYCLES
With base open
With external base-to-emitter - - Fig. 1 - Thermal-cycling rating chart for
V CER (sus) 0.1* 130 150 V
resistance = 100 $2
(Rbe* 2N6477, 2N6478.
With base-emitter junction - -
V CEV (susl -1.5 0.1* 140 160
reverse-biased
DC Forward-Current Transfer 4 ie 25 150 25 150

Ratio "FE 4 2.5* 5 5
100
Collector-to-Emitter ia 0.1 - 1 - 1
V CE (sat) 2.5e
V
Saturation Voltage 0.5 2 2
*
4 1» 1.8 1.8
Base-to-Emitter Voltage V BE : _ V
4 2.5* 3 3
m
\5V_
Forward-Current Transfer Ratio:
= 40 kHz
Kl 4 0.5 5 - 5 -
% 10- JA
**/ \ w,
f £ e
Gain-Bandwidth Product f 4 0.5 200 - 200 - kHz

T
Common-Emitter, Small-Signal, \
\
\\
Short-Circuit Forward-Current " -
4 25 25
Transfer Ratio:
- kHz
"fe
0.1
\\\
V \\, VoV^^
f 1
l\ i \
Thermal Resistance:
Junction-to-Case R 0JC _ 2.5 _ 2.5
1
_ ~ °C/W
Junction-to-Ambient 1 n 8jC 70 70
I
* In accordance with JEDEC registration data format (JS-6 RDF-2). * Pulsed: Pulse duration - 300 us, duty factor » 1 .8%.
Fig. 2 - Thermal-cycling rating chart for
CAUTION: The sustaining voltage V ce q(sui), V CER (susl, and V CEU (sue) MUST NOT be measured on a curve tracer. RCA3441, RCA6263.
227
POWER TRANSISTORS
2N6477, 2N6478, RCA3441, RCA6263

ELECTRICAL CHARACTERISTICS, At Case Temperature <TC) • 2S°C unless otherwise specified C0LLECT0d-T0-EMITT£R VOLTACE (V C E>*«V ! 1
CASE TEMPERATURE (T C )'25*C

1.2
3 !
VOLTAGE CURRENT X
CHARACTERISTIC SYMBOL RCA62S3 RCA3441 UNITS '"
Vde Adc i
VC E V EB vB e 'c •r
MIN. MAX. MIN. MAX. [
Collactor-Cutoff Currant:
'CEO 100 - 5 " .
With base opan 120 5 £ 0.6

With base emitter
*CEX 120 -1.S - 5 - i
iunetion reverai-oiased 140 -1.5 5

mA
| 0.4
At Tc - 150°C 120 -15 - 10 -
'CEX
140 -1.5 10 0.2
i
Emitter-Cutoff Currtnt
*EBO 5 - 2 - 2 mA 3
Collector-to-Emitter 6 a f> 8 2 8
\*
Sustaining Voltage: VCE0 («lt) 0.1 a 120 - 140 " COLLECTOR CURRENT (I c ) — mA
With but span
With external ban-to-
amittar ratinanca V CER (sus) 0.1" 130 " 150 " V Fig. 3 - Typical gain-bandwidth product
(R BE l-toon
for all types.
With t»M-*mittir junction V CEV ltut) -1.5 0.1 a 140 " 160 "
ravartt-biaitd
DC Forwerd-Current h FE 4 0.5" 20 150 20 150 _ 140 COLLECTOR -TO EMITTER VOLTAGE (V

Tramlar Ratio CE |.< V
Collector-to-Emitter V CE lsat> 0.5" 0.05" " 1.2 " 1.2 V - 120

S
Saturation Voltage \
2 ^
Base-to-Emitter Voltaga V BE 4 0.5" - 2 - 2 V 100
Gain-Bandwidth Product *T 4 0.2 200 - 200 - kHz

| 80
'
Common-Emitter,
Small-Signal, Short- I 60 ^_ \& TSE |.25
TEMPERATURE
C #
C
Circuit Forward- h f. 4 0.1 25 " 25 -
|
Currant Trantfar Ratio
H- 1 kH«>
12! -C,
Forwar0-8ias Sacond
S 20
Braakdown Collactor 120 0.3 - 0.3 - A
's/b
Currant5 It |> 1 1) ° V
Tharmal Resistance: 10-2
Junction- to-Gaia
"»JC
- 3.5 _ 3.5 COLLECTOR CURRENT ( - A
c>
92CS-2244:
°C/W
Junction- to-Ambiant R «JA - 70 - 70 Fig. 4 - Typical dc beta characteristics
"Pulsed: Pulse duration - 300 us, duty factor - 1 JB%. "Pulsed: 1-second non-repetilive f
for 2N6477.
wii M iii in i!' HH,ui..anHiim;tnimm) - 140 .OLLI CTOR -TO-EMITT R VOILTAGE (VCE ). 4V
CASE TEMPERATURE (Tc)»25"C \
(CURVES MUST BE DERATED - 120
\
LINEARLY WITH INCREASE \
IN TEMPERATURE) " 100
I '
i eo r
f
"°
\c SE :mpei ATUf E
i TC 25'
«•
12! •<*
i V
S
1 20
s
10-2
COLLECTOR CURRENT {
c>
-A
Fig. 5- Typical dc beta characteristics

for 2N6478.
2 4 6 8 .«„,,,„ 2 4 6 8
1000
COLLECTOR-TO-EMITTER VOLTAGE (VcE> —V 94CS-22440

Fig. 6 - Maximum operating areas for 2N6477 and 2N6478. for 2N6478and RCA3441.
228
'
POWER TRANSISTORS
2N6477, 2N6478, RCA3441, RCA6263

I0
8
'
6 *
^lii-: hi; ;!( n-' i
r!
;
!:
'ii V.i:
PULSE OPERATION*
IC MAX. PJLSEO;
4
;-i;;i i::;r- "^75
IC MAX. CONTINUOUS"
i
pifi 'Iff 4 t i i
Iff i!i:
2.5 : :
' '
j
p ^41 iil
•
!i:ti?
H j! !l
;
\ i ;
2
|l
'
'. :
! ! Sj
:•!:
< 5
I I
'Ii fi $fl
"! '
j
I0Q/U
O
H
~"
s
r* as•i*N + -^ j
i_—
--
—
6
500 M s
Z = :. COLLECTOR-TO-EMITTER VOLTAOE (Vcjl-V
4 J* ; 1
a: '
:
1
a:
O " CASE TEMPERATURE (T C )«I00*C

- |
— Fig. 9 - Typical output characteristics
S 2 (CURVES MUST BE DERATED LINEAR!.r
for 2N6477 and RCA6263.
t-
O
-1
II II
— -
Jrrl
20 ms
-----
O 0.1
-_
i i
\\ 50 ms
° ' '
8
- NONREPETITIV --St
II
1 1
SI
6 - PULSE 200 ms
4 |
dc-
1 1 Ml 1 III II ..... _
Vet
2
.; - ::
0.01 .
i
- .
:"
1
120
COLLECTOR-TO-EMITTER VOLTAGE (V C e) —V
0.2 0.4 0.6 0.8 1.2 1.4
92CS-22442 I
BASE-TO-EMITTER VOLTAGE (Vbe>— V

92CS-27T56
Fig. 8 - Maximum operating areas for 2N6477 and 2N6478.
for 2N6477 and 2N6478.
Fig. 12 Typical transfer characteristics

for RCA3441.
2 4 6 8 .'_ 2
COLLECTOR-TO-EMITTER VOLTAGE (VC E>— V '*<>
MCS- 222SO
Fig. 1 1 - Maximum operating areas for RCA3441, RCA6263. for RCA6263.
.229
POWER TRANSISTORS
2N6479, 2N6480
Radiation-Hardened Silicon N-P-N Power Transistors

Epitaxial-Planar Types for Aerospace and Military Applications
Rated for Operation in Radiation Environments

with Cumulative Neutron Fiuence Levels to 1 x TERMINAL DESIGNATIONS
1014 Neutrons/cm2 and Gamma Intensity to 1 x
108 Rad(Si)/s
The RCA-2N6479 and 2N6480' are The 2N6479 and 2N6480 are intended
epitaxial silicon n-p-n planar power- for use in 5-to-10 ampere high-
switching transistors. They are de- frequency power inverter service.
signed for aerospace applications in They are supplied in hermetic flat
which they might be subjected to ex- 3/4-inch (19.05 mm) diameter
treme neutron and gamma-ray ex- packages with radial leads .
posure. C
•Formerly RCA Dev. Nos. TA8007 and (CASE)
TA8007B, respectively.
(RADIAL)
2N6479 2N6480
*
VCBO 100 100 V
VcER(sus)
RBE<100Q 80 100 V NOTE CURRENT DERATING AT CONSTANT VOLTAGE
:
* VrjEX APPLIES ONLY TO THE DISSIPATION- LIMITED PORTION

60 80 V AND I S /b -LIMITED PORTION OF MAXIMUM -OPERATING-
AREA CURVES 00 NOT 0ERATE THE SPECIFIED
*VcEO(sus) 60 80 V AT
RATED
VALUE FOR I c MAX.
*VebO 6 V DISSIPATION
OF
*'C 12 A VOLTAGE
'CM 25 A PERCENTAGE
MAXIMUM
*'B 5 A SPECIFIED
*Pr: OF OR
C AT
Tc<25°C 87 W -ZS*
Tc<25°C _SeeFig. 1 and5_ PERCENTAGE
Tc
CURRENT
Tq = 100°C 50 w
* Tj,T s tg ; _ -65to200 _ °C POO
CASE TEMPERATURE
OS
(Tc )-t
BO ITS 200
*T|_:
During soldering, at distances 1/32 in. (0.8 mm) Fig. 1 Derating curves for both types.
from seating plane for 10 s max 230 °C
*ln accordance with JEDEC registration data
100, 1 1
IO-'«,
CASE TEMPERATURE ITC )'25*C
4 v^-J 1 1
» F*
'k. ""i"""
ft *
ft fe *8
?' *F£ 2
8 4r
Or/
1*0' "r- »FE|
rv
-Z 4c
* s '
\^
i
c 1
Xo s.
* ,.
i
10
B • S 8 « 4
t 1

UCS-22UI
Fig. 2 • Thermal-cycling rating chart for both
types. Fig. 3 Typical 1-Me ^-equivalent neutron dam- Fig. 4 Typical collector-to-emitter saturation
age coefficient as a function of collec- voltage as a function of 1-Me V-equlv-
tor current for both types. alent neutron fiuence for both types.
230.
. POWER TRANSISTORS
2N6479, 2N6480
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25'C
PRE-RADIATION
VOLTAGE CURRENT 2N6479 UNITS
CHARACTERISTIC Vdc Adc 2N6480
VCE vbe ic >B Mln. Max.
ICBO 10oa — 1 mA
ices 60 — 200 MA
icev 100 — 1
(Tc = 100 °C) 60 — 1 mA

<EBO -6 — 2
VEBO (IE = 2 mA) 6 —

2N6479 0.2C 60
VCEO(sus)b —
2N6480 0.2C 80 V
VCER(sus)b (Rbe = 100 Q) —
2N6479 0.2C 80
2N6480 0.2C 100
2 12C 20 300
hFE
VBE(sat)
12C 1.2 — 1.5
V
VcE(sat)
12C 1.2 — O./b
IS/b (t = 1 s) 12 7.3 — A
Es/b (Rbe = 100 q, 5 1.25 — mJ
L = 100M H)
|hfe| (f = 10 MHz) 5 1 10 —
fT 5 1 100 — MHz
Cobo (* = 1 MHz) 10a — 400 PF
tr
30d 12 1.2 — 400
ts
30d 12 1.2e — 800 ns
tf
30d 12 1.2e — 200
R0dC 10 5 — 2 °C/W
*ln accordance with JEDEC registration data.

'Vcr value.
bCAUTION: The sustaining voltages V C EO(sus) and V C ER(sus) MUST NOT be measured on a curve
tracer. These sustaining voltage's should be measured by means of
the test circuit shown in Fig. 10.
ePulsed; pulse duration < 350 ps, duty factor < 2%.
d Vcc value.
•'B-i = -'B2.
TYPICAL CHARACTERISTIC DURING GAMMA EXPOSURE FOR DOSE RATES

OF LESS THAN 1 x 108 RAD(Si)/sec
For both
CHARACTERISTIC VOLTAGE - V dc Types
UNITS
VCB vbe TYPICAL

Collector-to-Base Coulomb
Charge Generation 20 5x10"
Rad
Constant (C)
in the depletion region of a transistor is proportional
to the volume of the
The charge generated
depletion region, the total dose, and the energy of the gamma radiation.
The primary base-collector photo current [1 = <c wnere * is ,he g amma dose ra,e in
pP (base)] fy.
'
Rad(Si)/s.
.231
V
POWER TRANSISTORS
2N6479, 2N6480
POST-NEUTRON-RADIATION ELECTRICAL CHARACTERISTICS
AFTER EXPOSURE TO 5 x 1013 NEUTRONS/cm2 (1 MeV equiv.), At Case
Temperature (Tq = 25 'C
IC MAX.(C 3NTINU0US)
« 1"
TEST CONDITIONS kr ' '

IO
LIMITS s
.1
"^
CHARACTERISTIC VOLTAGE CURRENT 2N6479 L?-^
Vdc Adc 2N6480 UNITS X -1,
'',
VCE vbe ic >B Min. Max. t> -

, \
—
t
'CEV 100 1.2 6

mA &
lEBO -5 — 2.2
VcEO(sus)t> 2N6479 0.2C
0.2C
60 •
— V O.I
2N6480 80 *
hFE 5 ?c 12 — COLLECTOR TO-EMITTER VOLTAGE (VCE )-V 92 cS-22»29
Maximum operating area

VBE(sat) 7C 1.4 — 1.5
V
Fig. 6
(TC = 100°C).
for both types
VcE(sat) 7C 1.4 ' — 1.5

l0 ° CASE TEMPERATURE (TC ).J5-C
= 10 MHz) _
|hfe| (f 5 1 10 COLLECTOR-TO-EMITTER VOLTAGE IVCE>'"
K* — 9x10- 16 9
6
7
1
"•>
i
*ln accordance with JEDEC registration data. " s
bCAUTION: The sustaining voltage V*ceo( s us) MUST NOT be measured on a curve ^
tracer. This sus-
| - v
taining voltage should be measured by means of test circuit shown in Fig. 10. \
c Pulsed; pulse duration
< 350 us, duty factor < 2%.
Knowing K, hpg 2 may be calculated for other !
h FE "FE-i
fluences using the relationship: i
A Damage constant K = 2
E
o
Where hpg = Beta prior to exposure h FEo = IO
HD
2
1 1
n FE2 = Beta a ' ter exposure K+ + COLLECTOR CURRENT (I c )— A

n FEi
6 = Neutron fluence (1 MeV equiv.) Fig. 7 - Typical dc beta characteristic for both
types.
COLLECTOR CURRENT Uc) —A
Fig. 8 - Typical base-to-emitter saturation

voltage characteristic as a function of
collector current for both types.
CASE TEMPERATURE (TC )-25*C

IIIIIIH
ifiiftti
ii Myjfej
<
i
w
iH :
irf
S 0.6 Wtlfltttftttftf
tintumm
» ' * "' « '«'"TJOCT
COLLECTOR -TO- EMITTER VOLTAGE (VCE )— Sj 0.2
i
Fig. 5 Maximum operating areas for both
types (TC = 25'C). 2 i e s 10 12 14
COLLECTOR CURRENT —A

Fig. 9 Typical collector-to-emitter saturation
voltage characteristic as a function of
collector current for both types.
232
POWER TRANSISTORS
2N6486-2N6491
15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base
VERSAWATT Transistors Features:
Complementary Pairs for General-Purpose
Color-coded packages of molded-silicone plastic:
Switching and Amplifier Applications
Green - p-n-p(2IM6489, 2N6490, 2N6491
RCA-2N6486-2N6491*, inclusive, are epitaxial-base silicon These devices are supplied in the RCA VERSAWATT package Gray -n-p-n (2N6486, 2N6487, 2N6488)
transistors. The 2N6486, 2N6487. and 2N6488 are n-p-n in color-coded molded-silicone plastic; the 2N6489-2N6491
complements of p-n-p types 2N6489. 2N6490, and 2N6491, (p-n-p) devices are green, and the 2N6486-2N6488 (n-p-n)
respectively. All these devices are intended for a wide variety devices are gray. All are regularly supplied in the JEDEC TO- TERMINAL DESIGNATIONS
of medium-power switching and amplifier applications, and 220AB straight-lead version of the package. They are also
are particularly useful in high-fidelity amplifiers utilizing com- available on special order in a variety of lead-form configu-
plementary-symmetry circuits. rations.
• Formerly RCA Dev. Nos. TA8325, TA8324, TA8323, TA8328,

TA8327, and TA8326, respectively.
N-P-N 2N6486 2N6487 2N6488
MAXIMUM RATINGS, Absolute-Maximum Values: P-N-P 2N6489* 2N6490* 2N6491*
• COLLECTOR TO-BASE VOLTAGE V
COLLECTOR TO EMITTER VOLTAGE: BOTTOM VIEW
» With 1 (VbeI o f reverse bias, and external
.5 volts
base-to-emitter resistance (RbE) "= 100 ^ VCEX JEOEC TO-220AB
resistance (RfjEl - 100 £2 VCER
With base open VCEO
»EMITTER-TO-BASE VOLTAGE VEBO
•CONTINUOUS COLLECTOR CURRENT ic 18
•CONTINUOUS BASE CURRENT IB I
• TRANSISTOR DISSIPATION. PT 1 1»

At ambient temperatures up to 25°C 5 75
At case temperatures above 25°C ........ Derate linearly 0.6 W/°C i

At ambient temperatures above 25°C Derate linearly 0.0144 W/°C
• TEMPERATURE RANGE: i"
. 25
Storage and operating (Junction)
• LEAD TEMPERATURE (During soldering): -
1 1 1 1 1 1 1 1 1 1 III 1 1 1 1 1 1 1 1 ll\l 1
1
At distance > 1/8 in. (3.1 7 mm) from D 25 50 100 ISO 2
seating plane for 10 s max CaSETEWERATUIIEITcl-^C

JEDEC data format JS-6 RDF-2. For p-n-p devices, voltage and current values are negative.
In accordance with registration
Fig. 1 - Derating chart for all types.

ELECTRICAL CHARACTERISTICS, At case temperature (Tel = 2S°C unless otherwise specified
VOLTAGE :urr 2N6486 2N6487 2NtV188

( UNITS
CHARACTERISTIC SYMBOL Vote Adc 2IMS489* 2N6490* 2NtV191*
Mm. Min. Max. Min. Max.

V CE «BE 'c
Min.
35 " 500
Collector-Cutoff Current uA
55 500
With external base-emitter 'CER \ : 500
resistance = 100n 75
(RgE*
45 -1.5 500
With base-emitter junction reverse Z uA
65 -1.5 500
biased and external base-to-emitter _ 500
85 -1.5 :
'CEX
40 -15 5
-1.5 .5 mA
At Tc - 60°C 60 \
1
-1.5 : l 5
80
20 1
1
'-_ mA
With base open 30 ,"
'ceo : \
40
-6 - 1
- 1
- 1 mA
Emitter -Cutoff Current 'ebo NUMBER OF THERMAL CYCLES
4 5« 20 150 20 150
DC Forward-Current
h 6 5
FE 4 15* 5
Fig. 2 - Thermal-cycling rating chart
Collector -to-Emitter 80*
0.2 40* 60" 4r\r alt fi/np.c
Sustaining Voltage V CEO lsusl
a COLLECTOR- T0- EMITTER VOLTAGE (VCE 1" 4V
With external base-emttter V CER lsusl 02 45" 6S b 85" - n CASE RAT
resistance 1R = 100O
QE >
I 10
X
With base-emttter (unction reverse -
1.5 02 50* 70b 90l>
»
biased and external base-to-amtuer V CEX Uusl 1
resistance (R
BE > = 10011 | a
5a 13 1.3 1.3
4
:
V § 7
* Base-to- Emitter Voltage V BE 4 1S» 35 3b 3.5
1.3 1.3 I 6
* l = 0.5A 5» 1.3 V X
Collector-to-Emitter __ B V CE lsatl 3.5
l = 5A IS* 3.5 3.5
£ 5
B
* Magnitude of Common-E | 4
<
Small-Signal ShortCir Ult
Forward-Current Tran fer Ratio 1
v 1
4 1 5 5 5
" 3
f = 1 MHz I 2
* Common-Emitter, Small-Signal, -
;25 " 2b " 2b 1
Short-Circuit, Forward-Current h fe 4 '
- ,67
Thermal Resistance :
R 8JC - 1.67 " i.er

COLLECTOR CURRENT (I C ) —A 9ZCS-22449RI
°c/w
Ju nc,io n ,o- amb ,en, r 0ja " " 70 70
Fig. 3 - Typical gain-bandwidth product as a
" CAUTION: Suste.nmg ,o/»o« V c£0 l,usl. V cef,lsusl , nd „

function of collector current for all types.
• In, e with JEDEC reg.stration data forma. (JS-6 RDF-2).
, _. MUST NOT be measured on a curve Tracer (See Fig- :
11
* Pulsed: pulse duration = 300 us. duty factor - 1.8* _„„,..,„
For p-n-p devices voltage and current values are negative
233
V AA
POWER TRANSISTORS
2N6486-2N6491
Fig. 5 - Maximum operating areas for all types. *
i660
B |
* 6 |
| 1
I
CASE TEMPERATURE (T C ).I25*C
s£ cX.
" I00
T^p£ iN\
40 60 80 I00
COLLECTOR-TO-EMITTER VOLTAGE <Vce> V — 1 !
92CS- 22809
Fig. 4 Maximum operating areas for all types.

* * ,0
COLLECTOR CURRENT (!<;>—

2N6486, 2N6487, and 2N6488.
I.2 .:.!:::': PULSE DURATI0N*20»«

Sft REPETITION RATE- PULSE It
COLLECTOR SUPPLY VOLTAGE (VC C>'50V
:
:
;
kV CASE TEMPERATURE (T C )*S*C

IB, -iBj'IC'IO
$& ::;:l;N»;i*fi»* Ujit:rt
o.e
HT r!n
.:::
% 0.6 w> tf£ jlijii!}
2
5 04
1^
jT §Tt
4
'-'.'.*
1A î
* TTE
ijit
02 MJj
;):: &: :6elay time imlKJ
ffl
BASE-TO-EMITTER VOLTAGE IVflgl—
COLLECTOR-TO-EMITTER VOLTAGE 1VCE >-
COLLECTOR CURRENTIIr)
U A
9ZCS-22-
Fig. 7 • Typical transfer characteristics for Fig. 8 Typical output characteristics for Fig. 9 - Typical saturated switching
all types.
* * 2N6486,
characteristics for
all types.
2N6487, and 2N6488.
•PULSE DURATION •20|>> -J
Ul0 3 9
case*
1.2
si p HHj
i COLLECTOR SUPPLY VOLTAGE (Vcc l- -20V

CASE TEMPERATURE
~~ H-
ITC |. 2SV
1 « V r«n
t
J CASE TEMPERATURE (TC )-25"C >-2S
Is flB|'I»2-IC"0 1
:!i;
•;^ Uii r.3!* IfflffiflfllHIllllllHllllllHH
29^
^s *> 0.8 ST ;;;: :tn §?.
65 r-
1
5.
1
~~
Bill
— ! r i
lifjiHw
t -~ :
u:':
I 0.6 KL hi %! illilliplllllll'liili
\
C
n & li
£ 04 di -i rrt
"::|ljUlll}|||||||||||||[tf
g * u RN-
i *
0.2 8-05
>ELAY TIME(ld l.
B 8 8 a « 6 » 10 - 2 - 6 -20
COLLECTOR CURRENT (I.) —A COLLECTOR CURR£NT(I C > A COLLECTOR CURRENT (!(;)—
Fig. 11 - Typical saturated switching Fig. 12- Typical collector-to-emitter satur-

Fig. 10 - Typical dc beta characteristics
2N6489,
characteristics for ation-voltage characteristics for
for 2N6489, 2N6490, 2N6491.
2N6490, and 2N6491. all types.
234
POWER TRANSISTORS
2N6510-2N6514
High-Voltage, High-Current, Silicon N-P-N Power Switching
Features:
Transistors • Fast switching speed
Epitaxial pi-nu construction
Hermetic steel package-JEDEC TO-3

For Switching Applications in Industrial
Maximum-safe-area-of-operation curves
Commercial and Military Equipment
Thermal-cycling rating chart
The RCA-2N6510,-2N6511,-2N6512,-2N6513, and-2N6514* These devices are hermetically sealed in a steel JEDEC TO-3
are epitaxial silicon n-p-n power transistors with pi-nu con- package. They differ from each other in breakdown-voltage TERMINAL DESIGNATIONS
struction. They are especially designed for use in electronic ratings, leakage, a nd beta characteristics,
ignition circuits and other applications requiring high-voltage, •c ormer y RCA Dev. N 0S TA8847D, TA8847A. TA8847B. TA8847C
, .
high-energy, and fast-switching-speed capability. an<j TA8847E, respectively.

2N6510 2N6511 2N6612 2N6613 2N6614
•COLLECTOR-TO-BASE VOLTAGE V CBO 250 300 350 400 350 V
With external base-to-emitter resistance R BE =50 fl v CER (sus) 2S0 300 35 ° 40° 350 V
With base open V CE0 (sus) 200 250 300 350 300 V
•EMITTER-TO-BASE VOLTAGE V EB0 6 6 6 6 6 V
c 7 7 7 7 7 A
B 3 3 3 3 3 A
•EMITTER CURRENT I
E 10 10 10 10 10 A
At case temperatures up to 25°C 120 120 120 120 120 W
At case temperatures above 25°C See Figs. 1 and 2.
Storage and Operating (Junction) —— .. —65 to +200 C
At distances > 1/32 in. (0.8 mm) from seating plane for 10 s max. . 230 — - °C
•In accordance with JEDEC registration data format JC-25 RDF-1
25 50 75 100 125 150 175 200

CASE TEMPERATURE (Tc l —
"C
Fig. 2- Derating curve for all types.
100
> L
•
1
Sk
,\\ "^*r
<
s
!
i\\
\
* 2 V \
o
X
^
10 l\ N\ NUMBER OF THERMAL CYCLES
Fig. 3• Thermal-cycling rating chart

for all types.
- 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE )'3V
s •
I25'C
"25-C
-*-.
>- 10
CASE TE IPE RATURI (T c )
-40* ;
Nv
2 * s
<\
\i
10 100 200|30o| 1000
—V I ,
COLLECTOR-TO-EMITTER VOLTAGE (V CE ) 250 350 92CS-2502I 8
*
Fig. 1 Maximum operating areas for all types. 8 i
Fig. 4 - Typical dc beta characteristic for
all types.
235
- 1 :
POWER TRANSISTORS
2N6510-2N6514
ELECTRICAL CHARACTERISTICS, Case Temperature (T ) -
c 2S°C Unless Otherwise Specified
10, — —u—
l-imaxicontin
i 1
/>. i
5$sV
TEST CONDITIONS LIMITS VY %
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N6612
2N6513 UNITS
CASE TEMPERATURE
IW-iVC —
Vdc
V CE vbe 'C
Adc
b Min.
2N6614
Typ. Max. Min. Typ. Max.
J.
-
— I
H-l 1
—
1-
**
"#
*>
Collector-Cutoff Current: *<>
- - 1 ,
With base open 250 5 - -
'CEO 300 mA
5 |o..
|
With base-emitter 350 -1.5 - - - -

5 Vcf (MAX.! • 250 V (2N69II - s
junction reverse biased 400 -1.5 5
i ! >h
VC E (MAX.) • 300 V (2N63I2 , 2N6SI4)— H
With base-emitter 'CEV mA
n (MAX.) • 390 V (2N65I3
A
350 -1.5 - - 10 - -
junction reverse biased,
T C =100°C 400 -1.5 10
0.01 J5r 1 1 i i
L 11
Emitter-Cutoff Current -6 - -
COLLECTOR-TO-EMITTER VOLTAGE CV —V
'ebo 3 - - 3 mA CE )
92CS-25024
Sustaining Voltage:
Fig. 5 Maximum operating areas for
all types at 2S°Cand 100°C.
With base open V CE0 (sus) 0.2 300^ 350°
With external base-to- V
emitter resistance: VcER<sus) 0.2 350 b - - 400 b - -
Rbe - so n
Emitter-to-Base Voltage:
v ebo 6 - - 6 - - V
lg 3 mA
DC Forward-Current
Transfer Ratio:
2N6512, 2N6513 "fe 3 4a 10 - -
50 10 50
2N6514 3 5a 10 50
Base-to-Emitter
Saturation Voltage:
V BE (sat) V
2N6512, 2N6513 4a 0.8 - - 1.7 - - 1.7
2N6514 5a 1 1.7
Saturation Voltage:
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v
a (tat)] —V
•2CS-29CM
2N6512, 2N6513 v CE <»t) 4a 0.8 - 1.5 1.5 V
2N6514 5 1 1.5 - Fig. 6 - Typical collector-to-emitter satur-
All tvpes 7 3 1.5 2.5
ation-voltage characteristics for
1.5 2.5
Output Capacitance: all types.
V CB c obo 100 - 200 100 - 200 pF
= 10V,f-1 MHz COLLEC rOR-TO-EMITTER VOLTASC IVfyl-avH 1 1 1 1 I 1 1 H-
Magnitude of Common IS
Emitter, Small-Signal
M 10 -
3 - 9 3 - 9 MHz
•f
i.12.9
B
1
Current Transfer Ratio:

f = 1 MHz 1 1 1 1 II 1 H+a
Forward-Bias, Second-
1 *°
1 1 1 11 1 rM*^ri
I
Breakdown Collector 38 3.16 - 3.16
Current:
>S/b
200 - - _ A I" TrrrUffl
ftf
0.1 0.1
- 9 s
t 1 s, nonrepetitive
Switching Time: c 44l4-*l/lfr+
23
(V CC «200V, B1 -l B2 ):
l
T+r*
Delay Time: ffi&
2N6S12.2N6513 4 0.8 - 0.1 0.2 - 0.1 0.2
2N6514 «d
5 0.1 0.2
BASE-TO-EMITTER VCU7UC (V K —V )
•2Cf-ttotr
Rise Time:
2N6512, 2N6513 4 0.8 - 0.7 1.5 - 0.7 1.5
2N6514 V 5 0.7 1.5 all types.
Storage Time: ^s
2N6512, 2N6513 4 0.8 - 3 5 - 3 5
2N6S14 «s
5 3 5
Fall Time:
2N6512, 2N6513 4 0.8 - 0.5 1.5 - 0.5 1.5
tf
2N6514 5 0.5 1.5
Thermal Resistance:
Junction- to-Case Rfljc 20 5 - - 1.46 - - 1.46 °C/W
* Minimum and maximum values and test conditions CAUTION: The sustaining voltages V CE0 (sus> and \
in accordant* with JEDEC registration data format JC-25 RDF-1. MUST NOT be measured on a curve tracer.
* Pulsed; pulse duration - 300 ps, duty factor < 2%. C See Figs. 10a
COLLECTOR- TO- EMITTCT VOLTME (V^l — V

•Ks-neit
Fig. 8- Typical output characteristics for
all types.
236
: A v
:
POWER TRANSISTORS
2N6510-2N6514
ELECTRICAL CHARACTERISTICS, Case Temperature (Tc) - 2S°C Unlets Otherwise Specified tc'ia- i 4;
:;!
1 llffffffi^
IS t
TEST CONDITIONS LIMITS lit.
t
1
VOLTAGE CURRENT ! it
CHARACTERISTIC SYMBOL 2N6510 2N6511 UNITS I 12.5
T
Vdc Adc )•
V C E Vbe 'C b Min. Typ. Max. Min. Typ. Max. tt
i J- ^|
:
Collector-Cutoff Current: 150 - - 5 - -

'CEO 200 5*-
mA gjjlffl $
With base open
With base-emitter
junction reverse biased
250
300
-1.5
-1.5
- - 5 - -
5
mA
I"
ra 1 i
H
:5i.
With base-emitter
junction reverse biased,
T C -100°C
'CEV
250
300
-1.5
-1.5
- - 10 - -
10
23
H is
::
n
- - - - mA aMC-TO-tmrrai saturation vsltme {vîm*]—
Emitter-Cutoff Current 'EBO. -6 3 3
• 2CS-290Z*
Sustaining Voltage:
Fig. 9- Typical base-to-emitter saturation-
With base open V CE0 (sus) 0!2 200° 250 b voltage characteristics for all types.
V
emitter resistance V CER (sus) 0.2 250 b - - 300° - -
R BE ~ so n
Emitter-to-Base Voltage:
'3mA V E BO 6 _ _ 6 _ _ V
l
E
DC Forward-Current 3 3a 10 - 50 -
Transfer Ratio "FE 3 4a 10 50
Base-to-Emitter 3» 0.6 - - 1.7 - -

V BE (sat| V
Saturation Voltage 4a 0.8 1.7
3a 0.6 1.5
V CE (sat) 4a 0.8 1.5 V
Saturation Voltage
7a 3 1.5 2.5 1.5 2.5
Output Capacitance: - - pF
cobo 100 200 100 200
V CB = 10 V, f = 1 MHz
Magnitude of Common
Emitter, Small-Signal
- - 9 MHz Fig. 10 - Typical rise- and fall-time charac-
10 3 9 3
Current Transfer Ratio:
hi 1
teristics for all types.
f-1MHz
Forward-Bias, Second-
Breakdown Collector 38 3.16 - 3.16 - -
'S/b - A
Current: 200 0.1 0.1
t = 1 s, nonrepetitive
Switching Time: c
(V CC -200V, B1 l = B2 ):
l
3 0.6 - 0.1 0.2 -

Delay Time »d 4 0.8 0.1 0.2
3 0.6 0.7 1.5 -

Rise Time t
r _ 1.5
4 0.8 0.7
V*
3 0.6 - 3 5
Storage Time -
«s 4 0.8 3 5
3 0.6 0.5 1.5 _

Fall Time tf
4 0.8 _ 0.5 1.5
OOLLECTOR CURRENT <!(> —
'
Thermal Resistance:
- - - - 1.46 °C/W Fig. 1 1 - Typical storage-time characteristic
Junction- to-Case Rfljc 20 5 1.46
for all types.
* Minimum and maximum value* and test conditions
1
CAUTION: The sustaining voltages V CE o(sus) and V CE p(sus)

in accordance with JEOEC registration data format JC-25 RDF-1. MUST NOT be measured on a curve tracer. These sustaining
voltages should be measured by means of the test circuit shown
* Pulsed; pulse duration - 300 jis. duty factor < 2%. in Fig. 11.
See Figs. 8-10.
237
POWER TRANSISTORS
2N6530-2N6533
8-Ampere N-P-N Darlington Power Transistors Features:
Operate from IC with-
out predriver
80, 100, 120 Volts, 60 Watts Gain of 1000 at 3 A (2N6533) Low leakage at high
Gain of 1000 at 5 A (2N6530, 2N6532) Gain of 500 at 3 A (2N6531) temperature
High reverse second-
The RCA-2N6530, 2N6531, 2N6532, and breakdown capability
2N6533* are monolithic n-p-n silicon Dar-
lington transistors designed for power appli- Applications:
cations at low and medium frequencies. The Power switching
double epitaxial construction of these de- Hammer drivers
vices provides good forward and reverse
< Series and shunt regulators
second-breakdown characteristics. Their high 1.2 kfi • 100 a '
> Audio amplifiers
gain allows them to be driven directly from
integrated circuits. TERMINAL DESIGNATIONS
Formerly RCA Dev. Nos. TA8904C, TA8904D,

TA8904B, and TA8904A, respectively. Fig. 1 - Schematic diagram for all types.
MAXIMUM RATINGS, Absolute-Maximum Values: BOTTOM VIEW
2N6530 2N6531 2N6532 2N6533

*
V CBO 80 100 100
JEDEC TO-220AB
120
V CER (sus)
R BE = 10012 80 10o 100 120
V CEO (sus) 80 100 100 120
*V CEV (sus)
V BE = -1.5V 80 100 100 120 V
#V EBO 5 5 5 5 V
*'C 8 8 8 8 A
'CM • • 15 15 15 15 A
#,
B 0.25 0.25 0.25 0.25 A
#PT
Upto25°C 65 65
Above 25°C
65 W
See 2
Fig.
*
TJ' Tstg 65 to +150 °C
*
TL
At distances ~> 1/8 in. (3.17 mm)
from case for 10 s max _ 235
* In accordance with JEOEC registration data format JS-6, RDF-4.
COLLECTOR-TO-EMITTER VOLTAGE (V[ E I'1V
* 4
5- 4-
£ io
o ^s^
$ \
I'"; 8
h l>u
"N* •c >
>
O
4
i
$v ^ &
N'T?* N \
?1
&* I
90 TS
USE
100 129
TEMPERATURE ITC
190
I
— »C
179 200
1
I
\%~ Va
fY\ §
to
2
'
4-
\
\
NUMBER OF THERMAL CYCLES COLLECTOR CURRENT' I.) —A
Fig. 2- Dissipation derating curve for Fig. 3- Thermal-cycling rating chart Fig. 4 - Typical dc beta characteristics
all types. for all types. for all types.
238
V V
POWER TRANSISTORS
2N6530-2N6533
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) « 25°C unless *i C0U-ECT0R-T0-EMITTER VOLTAGE (V CE ) -5 V
otherwise specified CASE TEMPERATURE (Tcl'25'C
"i
2
TEST CONDITIONS LIMITS iio5

,
CHARACTERISTIC VOLTAGE CUR RENT UNITS

K 4
2N6630 2N6531 I
SYMBOL Vdc A de
VC E v B e 'c >B Min. Max. Min. Max.
80 - 1 -
'CEO 100 1
2
10
80 -1.5 - 0.5
I
>CEV _ mA FREQUENCY (f)-MHZ

100 -1.5 0.5
80 -1.5 - 5 Fig. 5 Typical small-signal current gain

-
Tc = 125°C
_ for all types.
100 -1.5 5
-5 - 5 - 5 mA
'ebo
3 5a 1,000 10,000
"FE 3 3a 500 10,000

3 83 100 5,000 100 5,000
V CE0 (sus) 0.2 80b - 100 b -

V CER (sus) - -
0.2 80 b 100 b V
R BE = 100 ft
V CEV (sus) -1.5 0.2 80b - 100 b -

3. 5a 2.8
VBE 3 3a - - 2.8 V
#
3 8a 4.5 4.5* tASC-TO-EMITTCR V0LTA8C ( K—
I
3a 0.006 3
V CE (sat) 5a 0.01 - , 2 - V Fig. 6 - Typical input characteristics for
8a 0.08 3* 3' all types.
S8
- 4
VF V
8* 5 _
h fe - -
5 1 1,000 1,000
f=1 kHz
Ihfel
5 1 20 - 20 -
f =1 MHz
c obo
V CB =10V - 200 - 200 PF
f =1 MHz
'S/b 24 2.7 - 2.7 - A

t = 0.5 s, 10 12
COLLECTOH-T0-CIIIITTER VOLTAGE (Vet' —v

nonrep. UCS-24«M
E S/b Fig. 7 Typical output characteristics for
L= 12mH -1.5 4.5 120 - 120 - mJ all types.
R BE = 100 ft
R 0JC - 1.92 - 1.92 °c/w
* In accordance with JEDEC registration data format JS-6, RDF-4.
a Pulsed, pulse duration * 300 jis, duty factor < 2%.
b CAUTION: Sustaining voltages V CE0 (sus), V CER (sus), and V cev (sus) MUST NOT be measured on
a curve tracer.
239
- V
POWER TRANSISTORS
2N6530-2N6533
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C unless s •
otherwise specified •.
3
c
TEST CONDITIONS LIMITS S
5 s
•
H-t-ly '.OOP
CHARACTERISTIC VOLTAGE CURRENT li.
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
Tc
,.
" inn "'"

2N6532 2N6633 UNITS II II 1 1 1 1 II 1 1 lllllff
SYMBOL Vdc Adc S * ^ljobb.25"
1
V CE v BE ii;
'c 'B Min. Max. Min. Max. loo.iooy:
hpj-ioo
-
:
120 - 1 T c .2S-c:
'ceo 100 1
120 -1.5 - 0.5

'CEV 100 -1.5 0.5 : mA COLLECTOR CURRENT (I c ) -A
93CS-24
120 -1.5 - - 5 Fig. 8 Typical saturation characteristics

Tc = 125°C
100 -1.5 5 for all types.
'ebo -5 - 5 - 5 mA
3 3a 1,000 10,000
h FE 3 5a 1,000 10,000
3 8a 100 5,000 100 5,000
V CE0 (sus) 0.2 100 b - 120 b -
V CER (sus)
0.2 100 b - 120 b - V
R BE = 100 n
V CEV (sus) -1.5 0.2 100 b - 120b -
3 3a 2.8
VBE 3 5a - 2.8 - V
3 8a 4.5* 4.5* ASE-TO-CMITTCR V0LTME(V K )—
»CS-24tl2m
3a 0.006 2
V CE (sat) 5a 0.01 - 2 - V Fig. 9- Typical transfer characteristics
3* for all types.
8a 0.08 3*
53 - 4
vF V
8s1 5 _ COLLECTOR SUPRLT VOLTAGE (Vrr). 20 V
5
h fe V-Vc /500
=
5 1 1,000 - 1,000 -
f 1 kHz
h fe|
l
5 1 20 - 2b - 1 S
f = 1 MHz
I
^v y
c obo
- -
2
X< **
v CB = 10 V 200 200 pF
f=1MHz
V
\
'd
9
'S/b
24 2.7 - 2.7 - A COLLECTOR CURRENT 1.)
S 6 T 8 9 10
t = 0.5 s,
1
nonrep.
Fig. 10- Typical saturated switching-time
E S/b characteristics for all types.
L= 12mH -1.5 4.5 120 - 120 - mJ

R BE = 100fi
R 0JC - 1.92 - 1.92 °c/w
In accordance with JEDEC registration data format JS-6, RDF-4.
a Pulsed, pulse
duration = 300 /us, duty factor ^ 2%.
b'CAUTION: V CE0 (sus), V CER (sus),
Sustaining voltages and V CEV (sus) MUST NOT be measured
on a curve tracer.
240
POWER TRANSISTORS
2N6530-2N6533
CASE TEMPERATURE <T C } = 25°C
v CEO MAX
(
)s
^ v (2N6530)
V (MAX '
) ' l0 ° v (2N653I, 2N6532)
CEO
Vrcn (MAX. ) = 120 V (2N6533)
i i iiiii'i i i i ii ii" iiiiiil
6 8 6 80.,J20
l'o 1000
COLLECTOR-TO-EMITTER VOLTAGE ( V CE ) — V 92CS-24603RI
Fig. 1 1 - Maximum operating areas for all types at case temperature of 25°C.
COLLECTOR-TO-EMITTER VOLTAGE (V CE )— V 92CS-24604RI
Fig. 12 - Maximum operating areas for all types at case temperature of 10CPC.
241
POWER TRANSISTORS
2N6534-2N6537
8-Ampere N-P-N Darlington Power Transistors
80, 100, 120 Volts, 36 Watts Gain of 1000 at 3 A (2N6537) Features:
Gain of 1000 at 5 A (2N6534, 2N6536) Gain of 500 at 3 A (2N6535) Operate from IC without predriver
The RCA-2N6534, 2N6535, 2N6536, and High reverse second-breakdown capability
2N6537* are monolithic n-p-n silicon Dar- Applications:
lington transistors designed for
Qc
power appli-
Power switching Audio amplifiers
cations at low and medium frequencies.
The double Hammer drivers and shunt regulators
Series
epitaxial construction of these
devices provides good forward and reverse
second-breakdown characteristics. Their high
gain allows them to be driven directly from • ha m TERMINAL DESIGNATIONS
12 too a
integrated circuits.

TO-66 hermetic packages.
• Formerly RCA Dev. Nos. TA8941C, TA8941D, Fig. 1 • Schematic diagram for all types.
TA8941 B, and TA8941 A, respectively.
JEDEC TO-66
2N6634 2N6536 2N6536 2N6537
80 100 100 120 V
>(su$)
80 100 100 120 V

80 100 100 120 V
/(sus)
80 100 100 120 V

5 5 5 5 V
8 8 8 8 A
'CM 15 15 15 15 A
"'b 0.25 0.25 0.25 0.25 A
Upto25°C 36 36 36 36 W
Above 25°C
stg °C
°C
At distances >
1 /8 in. (3.1 7 mm)
Or
from case for 10 s max
* In accordance with JEDEC registration data format JS-6, RDF-4.
100
•
•
I
£ 10* -
Z 4
o
I
CASE-TEMPERATURE
CHANGE I4T C » SO'C
)
-A
\>|
8
\ 1 J.
/*
V** \ \~^
—
\
^ *J
i&
'• a'*-
l S
"» \ \
*
S
4 V
? V* 5*c\l0 5»C \ 8'
\
15 SO 78 KM Its ISO ITS 200
'9 V kl \
CASE TEMPERATURE <TC ) — *C
9tCS-24IOS
NUMBER OF THERMAL CYCLES COLLECTOR CURRENT U r ) -
t2CS-2970
Fig. 2• Dissipation derating curve Fig. 3 - Thermal-cycling rating chart Fig. 4 - Typical dc beta characteristics
for all types. for all types. for all types.
242
POWER TRANSISTORS
2N6534-2N6537
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C unless «J». XLLECTOn CURRENT (Ic> • 1
otherwise specified CASE TEMPERATURE ITc)-2S*C

CHARACTERISTIC VOLTAGE CUR RENT 2N6534 2N653S UNITS
SYMBOL Vdc Akdc g
2
V CE V BE 'c 'B Min. Max. Min. Max. o 2
80 - 1 -
'ceo 100 1
10
80 -1.5 0.5 - t
'CEV 100 -1.5 : mA FREQUENCY (t)-MMZ

0.5
- Fig. 5 - Typical small-signal current

80 -1.5 5
TC = 150°C gain for all types.
100 -1.5 : 5
'ebo -5 - 5 - 5 mA
3 5a 1,000 10,000
hFE 3 3a 500 10,000
3 8a 100 5,000 100 5,000
V CE0 (sus) 0.2 80 b - 100 b -
V CER (sus)
0.2 80 b - 100 b - V
,
R BE = 100 il
V CEV' SUS) -1.5 0.2 80 b - 100 b -

3 5a 2.8
VBE 3 3a - - 2.8 V
3 8a 4.5* 4.5*
3a 0.006 3
ASf -TO-EWTTER VOLTAGE (
K —V >
92CS-S
V CE (sat) 5a 0.01 2 - V Fig. 6- Typical input characteristics

8a 0.08 : 3* 3* for all types.
5a - - 4
vF V
8" 5
h fe
5 1 1,000 - 1,000 -
f = 1 kHz
ih f ;i
5 1 20 - 20 -
f = 1 MHz
C obo
V CB = 10 V - 200 - 200 pF
f = 1 MHz
'S/b
34 1.06
- 1.06
- A
t= Is,
nonrep. COLLECTOR-TO-EMITTER V0LTA8E WcE>— V
E S/b
L= 12mH -1.5 4.5 120 - 120 - mJ for all types.
R BE = 100 SI
R 0JC - 3.5
- 3.5 °C/W
In accordance with JEDEC registration data format JS-6,

a Pulsed, pulse duration = 300 /us, duty factor < 2%.
" CAUTION: Sustaining voltages Vq E q (sus), V^gpfsus), and V CEV (sus) MUST NOT be measured on
a curve tracer.
243
A
POWER TRANSISTORS
2N6534-2N6537
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C unless u 7
otherwise specified 6
\
TEST CONDITIONS LIMITS o
CHARACTERISTIC VOLTAGE Ve XX) +

CURRENT 1 1 1 1 1 1 1 1 1 1 1 1 1 1
T <=
'•<
°
2N6536 2N6537 UNITS •
SYMBOL Vdc Adc

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 I
VCE VBE 'c 'b Min. Max. Min. Max. Ull \\ ]\\ 1 1 1 1 1 1 if 1 1 1 [ 1 1 l^ffl-typr'pyy,"
-
°' ""
- - 1 1 1 1 1 1 1 1 1 i 1 1 1 1 1 1
1
1 l^fi ff'1T| h rc'' l
120 1
1
-U-|T C .25'C--
'ceo 100 1
i
i
120 -1.5 - - 0.5
'CEV 100 -1.5
mA
0.5
120 -1.5 - - 5
T c = 150°C Fig. 8- Typical saturation characteristics
100 -1.5 5
for all types.
'ebo -5 - 5 - 5 mA
3 3a 1,000 10,000
b FE 3 5a 1,000 10,000 COLLECTOR-TO-EMITTER VOLTAGE (V CE )-3V 1 i
*'
::
3 8a 100 5,000 100 5,000 150 1i
V CE0 (sus) 0.2 100 b - 120 b - I o.s

"1
V CER (sus)
0.2 100 b - 120 b - V 1 IOO WWiW:
R BE = 100 n E T--
Uy
IM
75 Vi I
ii
V CEV (sus) -1.5 0.2 100 b - 120 b - i
*«° - - 4-
r
1 " <gj
11 \ 1 II 1 1 II
3 3a 2.8 8 | l>/Ht)f
VBE 3 5a - 2.8 - V 25
3 8a 4.5* 4.5* o ::£:
3a 0.006 2 BASE-TO-EMITTER VOLTAGE (V K )—V

V CE (sat) 5a 0.01 - 2 - V
8a 0.08 3* 3* Fig. 9 - Typical transfer characteristics
for all types.
53 4
vF V
S3 _ 5 _
h fe
5 1 1,000 - 1,000 - iov
f
h fe|
= 1 kHz 5
VV
Ic ' 500
IV CC )'
l
5 1 20 - 20 -
f = 1 MHz N
C obo 3 3
-
/'"""
V CB
f = 1
= 10
MHz
V - 200 - 200 pF i
2 r
^ '^ ^
y
<
'S/b \
34 1.06 - 1.06 - A s
t=1 s,
O
nonrep. 5 G 7 8 9 10
COLLECTOR CURRENT (I,.) —
E S/b
L= 12mH -1.5 4.5 120 - 120 - mJ Fig. 10- Typical saturated switching-time
R BE = 100ft characteristics for all types.
R 0JC - - °C/W
3,5 3.5
In accordance with JEDEC registration data format JS-6,

a Pulsed, pulse duration = 300 jus, duty factor < 2%.
"CAUTION: Sustaining voltages V ce q(sus), VcER' sus '' and V^gylsus) MUST NOT be measured
on a curve tracer.
244
POWER TRANSISTORS
2N6534-2N6537
106 CASE TEMPERATURE (Tc)« 25 °C
8 itffllllll llllllfc
(CURVES MUST BE DERATED LINEARLY --Milllllllll lIHlil 1 n
6 WITH INCREASE IN TEMPERATURE) IUJij|l|jyillli|tik
51 j! m7 :[::
4
3 ! L,JiliiB
-|in
^ I::
J^3---|g^gj 1 i |Mjjillm| rT|iff|p
1. !tt +H"4 l ff4
2
--T
j:l 4# *
Ejj Ic (MAX.) PULSED OPERATION
tS m!
4j ]
PULSED +*
rt
jttJ
+L!4-i;;;;|!,::i;:::
Sx
1\ *7Ic(max.):
1 CONTINUOUS — ii3
3aJ 3
iB^?fffiWiTtiiiiir
pi "H [I II- 4-
+
j
2 6
a,> !-!
: 50m$3i a£ V^*\w\WtmMH\\m
iilil II t
(- iiri j $K*
Z Ipgii
3 :
::
PffiiMftffllllllllff li
IT
::;i :
^°<*Np>ll
^WUJI ilMlWHJJIIilli
SÊ
O
(£
O
O
UJ
_l
2
r
:
* FOR
NON-REPE TITIVI
PULSE
SINGL E
1 jjjjip H
-J
1
n:':l :
i
;
.
1" 4i
-iii P&i }--4jLi-i-a4itm ''iijJvauBiiuudiiuji-
8
-t-ii
6 ^-r { liH+SgSS * jiUffllfflfflKflffi til
"H
e-*n ~y
4 fftfjjp
:r:
:
:::x-i Hn jj#|fftll!wl\rtfglt
V^c/% (MJ kx unnu (9h M44-|-|4j4 p
2
nH
:V CE0 (MAX.)=I00V{|^
6536 |j..!l||||lfflr 11
0.1
n ;tr ILL
V CE0 (MAX.M20 V(2N6537 ) \\\W tnttmpifc
-|l!|!|
•-i-r Itt ti'iniiiiiiitttttlittll Htttmitiiiillllllll 11

1
Tffl 1 1 1 1 1 i ttt)
1 10 too 1000
COLLECTOR-TO-EMITTER VOLTAGE (VCE ) —V 92CS-24606RI
Fig. 1 1 • Maximum operating areas for all types at case temperature of 25 C.
10 IO0
92CS-24608RI
COLLECTOR -TO-EMITTER VOLTAGE (V CE ) —V
Fig. 12 - Maximum operating areas for all types at case temperature of 100 C.
245
V
POWER TRANSISTORS.
2N6542. 2N6544, 2N6546

Features:
3-, 5-, and 10-A Power- Switching Transistors
100% High Temperature Tested for
High-Voltage N-P-N Types for Off- Line Power Supplies and Other High- 100°C Parameters
Voltage Switching Applications
High Voltage Rating:
V CEX = 350 V
The RCA-2N6542, 2N6544, and 2N6546 tested for parameters that are eassential to
the design to high-power switching circuits,
Low V CE (sat) at c l = 3-, 5-, and 10-A
series of silicon n-p-n power transistors
feature high-voltage capability, fast switching Switching times, including inductive turn-off Steel Hermetic TO-204MA Package
speeds, and low saturation voltages, together time, and saturation voltages are characterized
with high safe-operating area (SOA) ratings. at100°C;as well as at 25°C, to provide infor- Applications:
They are specially designed for off-line mation necessary for worst-case design, Off-Line Power Supplies
power supplies, converter circuits and pulse- The 2N6542, 2N6544 and 2N6546 tran- High Voltage Inverters
width-modulated regulators. These high-volt- s istors are supplied in steel JEDEC TO-204MA Switching Regulators
age, high-speed transistors are 100-per-cent hermetic packages.

m%^2 2Ng544 2N654g TERMINAL DESIGNATIONS
* V CB0 650 V
* V CEV
V B£ = -1.5V 650 V
* V CEX (Clamped)
V BE = -1.5V 350 V
* V CEQ 300 V
* V EBO 9 V
l
c (sat) 3 5 10 A
* l
c 5 8 15 A
10 16 30 A JEDEC TO-204MA
l
CM
* l
B 5 8 10 A
* PT
T c upto25C 100 125 175 W
T c above 25°C, derate linearly 0.57 0.714 1 W/°C
* T, tn ,T, -65 to 200 °C
9
* TL
At distance ^1/8 in. (3.17 mm) from seating
plane for 5 s max 275 C

I
%
5
f
Is
s
1 90
29
29 90 79 100 129
Mil
Mjj^B
00 179 200 229
!
29
CASE TEMPERATURE <T C )— *C mm-2
Fig. 2— Dissipation and l§/b derating curves
for all types.
S^ t
j
MAX. -2 oo*c
* ^>v
N^ f x
^ «J
\ >?,
*%§£
*
V ^
* - ' "ibo
io
COLLECTOR-TO-EIMTTEn VOLTMC(VCE>-
10 in
Fig. 1 — Maximum operating areas for type Fig. 3— Thermal-cycling chart for
2N6542 (Tc = 25° C). type 2N6542.
246
,
POWER TRANSISTORS
2N6542, 2N6544, 2N6546

100
ELECTRICAL CHARACTERISTICS
TEST CONDITIONS LIMITS »
VOLTAGE CURRENT
1
'
\ 'Nfr
CHARACTERISTIC
Vdc Adc
2N6542 2N6544 2N6546
Unit*
(P,
i * \ ^
\
'"N* \
VC E V B E 'c >B Min. Max. Min. Max. Min. Max.
DISSIPATION
1 t%
- \
TC = 2?C EK
'CEV 650 -1.5 - 0.5 - 0.5 - 1

1 VV
mA
'EBO
V CE0 (sus)b
-9
0.1" 300 -
1 -
300 -
1
-
300 -
1
V
10
V\ \\ \
NUMSER OF THERMAL CYCLES »2CS-2»023
hFE 2 3a 7 35 Fig. 4 — Thermal-cycling chart for
2 1.5a 12 60 type 2N6544.
3 5a 7 35
3 2.5a 12 60
2 10a 6 30
2 5a 12 60
V BE (sat) 3a 0.6 — 1.4 — -
5a 1 1.6
10a 2 1.6
V CE (sat) 3a 0'6 1
5a - V
1 5 1.5
8a 2 - - 5
10a 2 1.5
• • 104 t 4 • • K>»
15a 3 5
NUMMR OP THERMAL CYCLES
'S/b t = 1 s 100 0.2 - 0.2 - 0.2 - A •IC>-
Fig. 5— Thermal-cycle rating chart for

f
T f = 1 MHz 10 0.2 6 28 type 2N6S46.
10 0.3 6 28 MHz
10 0.5 6 28
t
C obo f = 1 MHz 10d 50 200 75 300 125 500 pF
td
e 3 0.6 0.05 i 1
5 1
- - 0.05 - * •
10 2 0.05
e 3 0.6 0.7 II"
<r
5 1 - - 1
-
10 2 1 a
A«
<s
e 3 0.6 4 —
5 1 - 4 -
0.1
10 2 4
t » 3 0.6 0.8 PULSE WBTM (lp)-t „,.,.„,
f
5 1
- - 1 : Fig. 6— Typical thermal-response characteristic
for types 2N6S42 and 2N6S44.
10 2 0.7
*•
e
1 *
s
2
9
f ai /'
'
8 :
/
1 /
a«
ww • •l
aoi
4 «8
_
ai
t 4 • •
1
t «( id
PULSE WIDTH (V — • ttCt-MMT
Fig. 7 — Typical thermal-response characteristic for
type 2N6S46.
.247
.
POWER TRANSISTORS
2N6542, 2N6544, 2N6546

:nar COLLECTOR- T0- EMITTER VOLTAGE <VCE )'2V
ELECTRICAL CHARACTERISTICS t •
TEST CONDITIONS LIMITS 2 *
2
VOLTAGE CURRENT ,
ASE
CHARACTERISTIC 2N6542 2N6544 2N6546 Units (
**
Vdc Adc 4
5
VC E VB E 'c >B Min. Max. Min. Max. Min. Ma*. •- Z
z
Tc = 100° C tc
V 10
* 650 -1.5 - 2.5 - 2.5 - 4 '
'CEV mA 1
•
* = - - - §
'CER RBE 5on 650 3 3 5
O 4
< S 1 1
* V CEX (sus)b.c COLLECTOR CURRENT ttcl-A g2C s-J0SJ0

V cc = 20 V 2.6» 350 Fig. 8— Typical dc beta characteristics for
L=180juH, type 2N6542.
R c = 0.05J2 4.5a - 350 - -

200 COLLECTOR-TO-EMITTER
v clamp = Rated O VOLTAGE (Vcgl-SV
V CEX 8a 350 V «ioo
v clamp = Rated
< •
v CEO -ioov 5a 200 sJJS'C
8a - 200 - -
15a 25-cS
200
* V BE (sat) 3a 0.6 1.4 —
CASE TEMPERATURE <T C I- -40*C"
5a 1
- - 1.6
10a 2 1.6 $ 10
V
* V CE (sat) 3a 0.6 - 2
5a 1
- 2.5 - COLLECTOR CURRENT (I c )-A nes-mn
10a 2 2.5 Fig. 9 — Typical dc beta characteristics for
type 2N6544.
*
ts
f -5 3 0.6 — 4
-5 5 1
- 4 -
-|S6- COLLECTOR - TO - EMITTER VOLTAGE (V 3V
CE )
-5 10 2 5
/us 1 '
*
tf
f -5
-5
3 0.6
:
0.8
- -
5 6
V
-5 10
5 1
2
0.9
1.5
< _£^C
S *>
a 'cj
* r »jc - 1.75 - 1.4 - 1 °C/W H 2

z c
<r
* In accordance with JEDEC registration data. c V cc = 20 V, L = 180 >xH, Rc = 0.05 n -40 -C

10
* Pulsed: pulse duration = 300 /is, duty factor <2%. **
Vqb value 8
b CAUTION: The sustaining voltage V^ E q(sus) • Resistive load, V cc = 250 V, t = 100 jus,
I
p 6
and V CEX (sus) MUST NOT be measured on a
"l "2
curve tracer. * Inductive load, V c amp
|
= Rated V CEX (sus),
= -l = 180 nH, R c = 0.05 n, V cc = 20 V COLLECTOR CURRENT Ic) —A 92CS- 30383
c /5, L
(
l
B —
type 2N6546.
16 I B -I C '5|
1
I B -I C /5| 18,10/5
z
o
i
TC --40'C M ^^^^^^^^^^^^ffi
6 o
TC .I2S •C
< <
Tc -25 •C K |2
<> 2
3
si* St, I
15°
i>
gSoi
i
J5^>
O-ts^ ^
fI
igOJ
I
8
- T^
IMM? i j\
c|ff
K
X
>,
ui
CASE
"
^tsnuRtTfcT
-iO'C
2£^Si.
.
-"-Jc
4
O t 8 tt2
eratniiitis
— COLLECTOR CURRENT (I,.) A
t!irnl
COLLECTOR CURRENT (I c )-A »2CS-2»9s:

COLLECTOR CURRENT (I c ) —A »2M-2»te«
Fig. 11 — Typical collector-to-emitter saturation F/</. 13 — Typical base-to-emitter saturation voltage

voltage as a function o f collector cur- F/fl". 12 — Typical collector-to-emitter saturation as a function of collector current for
rent for types 2N6S42 and 2N6544. voltage characteristics for type 2N6546. types 2N6542 and 2N6544.
248
E V
POWER TRANSISTORS
2N6542, 2N6544, 2N6546

4 COLLECTOR -TO-EMITTER
VOLTAGE (VC e)" 3 V
<
>
*>
•= I
2 >Si _»0
,
o~ 8 '
M
FuSTrtc^
m -3*t^»»
COLLECTOR CURRENT ( itf —A 92cs . 2 .
Fig. 16 - Typical base-to-emitter voltage as

a function of collector current for
types 2N6542 and 2N6544.
4 i B "- I C C5
SI
?« F^
8f
§
I
8
-40*0^
i0
,\CU
3 "SFc"
C**
10 100 0.4
COLLECTOR-TO-EMITTER VOLTAGE <VC
vtJ -V I
* ' " " 10 ' ' " 100
92CM-30533 COLLECTOR CURRENT(Ic>— A 92CS-30376
Fig. 14 — Maximum operating areas for type 2N6546 (Tq = 25 C). Fig. 17 — Typical base-to-emitter saturation
voltage characteristics for type
2N6S46.
COLLECTOR-TO-EMITTER VOLTASE (VCE )— V 92c <
Fig. 18 — Typical output characteristics for

types 2N6542 and 2N6544.
* * s 8 2
'I0 l6b
COLLECTOR-TO-EMITTER VOLTAGE { Vc ) -V 92CM-3053I
Fig. 15 — Maximum operating areas for type COLLECTOR-TO-EMITTER VOLTAGE (VCE 1—

2N6544 (Tc = 25° C). 9ZCS- 30374
type 2N6546.
249
r . -
POWER TRANSISTORS.
2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E

Features:
Rugged Devices, Broadly. Applicable High-dissipation capability
For Industrial and Commercial Use Low saturation voltages
The RCA-2N6609, MJ15004, RCA9116C, They differ in voltage ratings and in the f
T = 2 MHz
currents at which the parameters are con- High gain at high current
RCA9116D, and RCA9116E are ballasted
epitaxial-base silicon p-n-p transistors featur- trolled. All are supplied in the steel JEDEC
ing high gain at high current. They may be TO-204MA packages.
used as complements to the n-p-n types Applications:

RCA3773, MJ15003, RCA8638C, RCA
8638D, and RCA8638E, respectively. Series and shunt regulators
MAXIMUM RATINGS, Absolute-Maximum Values: Power-switching circuits

2N6609 MJ15004 RCA9116C RCA9116D RCA9116E
Solenoid drivers
* V CB0 -160 -140 -140 -120 -100
Vq ex (sus)
V BE = -1.5 V; R BE = 100 fi . . -160 - -
V CER (sus)
R BE = 100n -150 -150 -150 -130 -110 TERMINAL DESIGNATIONS
*
*
*
v CE0 (sus)
V EBO
-140
-16
"7
~ 140 _140
~5
-20
~ 120
—— ~ 100
l
c
* 'B - -4 5
* P
T
AtT c >25C 150 250 200 200 200 W
AtT c >25°C Derate linearly 0.857 1.43 1.14 W/°C
* T st Tj 65 to 200
* TL
At distance ^1/32 in. (0.8 mm) from
seating plane for 10 s max. . 265 230
* 2N-type in accordance with JEDEC registration data format JS25RDF1 , Issue 1 JEDEC TO-204MA
-100, CASE TEMPERATURE (T C )-25'C 1
6 (CURVES MUST BE DERATED UNEARLY|IS||I1

WITH INCREASE IN TEMPERATURE) Hill
4
Xc (MAX 1 CONTINUOUS |
2
1000$ COLLECTOR-TO
<
1
X>H0
M S
v Q^j^MiJI
V*
In
1
It
o
»
4
1~
R V
2
z 6 ms rrfl IB 1
im fit' 5
K 12! •
-V:\ nrl
£
S
* :•::
M|
~~
'
TE IP
rrr?
p B^^^ Sioo
i.
z
1
a
*
"
1T C
EMPERATURE
)-25'C^
_H
^s k>
—- '
^yvjiiiiiiisui
2
'liililiihl"**
s
j -1
8 9
.c^Hi • RCA9II6C
r-
•
6 B '*
WUIIHffl LSCAsiwDjBL *
1
4
:;=: i^B I RCA?l'J6E°B-
1 2
'm £
-• iffl vcFn MAX-I40V
-
i
2 |
;; VCE0 MAX.' 120 V (RCA9II60) j(2N«6<M.MJI90O4,
92CS30077
COLLECTOR CURRENT (I. c )-A
V CE0 MAX> I00V(RCA9II6E): ISSTSIH
2 1 «. ! < 6
S.ic >l<
2 « 6
?* 00 pjg m 2— Typical dc beta characteristics as a function
of collector current for all types.
COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V ^ 92C!
250
POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, at Case Temperature (TC)=25°C Unless Otherwise i UtiH
1 -3
Specified o
TEST CONDITIONS LIMITS 1 -25

it
j| | fflffffffffffff In lii
VOLTAGE CUR-
CHARAC- Vdc RENT mmtrnrmtii 1 till It Irmrr-*' lirfttttt
UNITS ^* ~Jm
TERISTIC V
Adc 2N6609 MJ 15004
VCE VBE «C Min. Max. Min. Max. O -1 ^tPMW lifflf=^-
Mw MtiMP^.itii
f itjraffiS
c
'CBO -1608 - -4 - -° 5
iHW/ttfHttttltffTfffi -tfttrffiF
B
-140" -2 -1
8
'CEX -140 1.5 - - - -0.1 -4 -6 -8 -10 -12 -14
COLLECTOR CURRENT (I c )-A 92CS-3O078
'CEX -140 1.5 - - - -2 Fig. 3— Typical saturation voltage characteristics

Tc = 150°C for all types.
'CEV -140 1.5 - -2 - -

mA
'CEV -140 1.5 — -10 — -
T c = 1 50°C
'CEO -140 -0.25

l
B
=0
-120 -10 ;
"EBO
-7 - -5 -
-5 -0.1
hFE -4 -8C 15 60
-4 -16C 5 -0.2 -0.6 -I -1.4 -1.8 -22 -2.6
-2 -5C 25 150
BASE-TO-EMITTER VOLTAGE (V BE )-V MCS-30081
-2 -10C 10
Fig. 4 — Typical input characteristics for all types.
V CEX (sus)b 1.5 -0.2 -160 - - -
R BE =100f2
V CER (sus)b - COLLECTOR-TO-EMITTER VOLTAGE
-0.2 -150 -150 - -12
(VCE I -2v|||||||||ffl
R BE < loon
V CE0 (sus)b -0.2 -140 - -140 - f -10
v EBO - -5d - X -8
-7
l
E = -1 mA It
° "«
lllllllllllllllllllllll^mîtM
-4 -8C -2.2 V |||||||||||||||||||
i:
^ty <0J^MlliM
VB E
-2 -5C -2
§
O
-4
I' If ill
-2
V CE (sat) m îfffllllllllllllllllllllllm
l
B = -3.2A -16<= - -4 - ^^^^^^^^^^^^S
= -0.8A -1.4
= -0.5A -5C -1
'S/b -100 -1.5 -1
t = 1 s -50 - -5 - A
p
nonrep.
COLLECTOR SUPPLY VOLTAGE ( Vcc>- -30V IIIIIHIIHI
Ih fe l * -In-Ibj. I/IO Ic
CASE TEMPERATURE (TC )-29*C
f = 0.05 -4 -1 4 - - X
= 0.5 MHz -10 -0.5 4 4 s
*T 2 - 2 - MHz S 16
h fe a
-4 -1 40 - - - i.2
f=1 kHz 3 1 Itlitri^ ifitttfnttt 1
1 0.8
cob - -
-108 1000 1000 pF
f = 0.1 MHz
11
R 0JC -10 -10 - 1.17 - 0.7 °C/W

c -2 -4 -6 -8 -10 -12
COLLECTOR CURRENT (I c )-A 92CS-:
See page 252 for footnotes.
Fig. 6— Typical saturated-switching times for
all types.
251
.
POWER TRANSISTORS.

ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C
Unless Otherwise Specified (Cont'd)
TEST CONDITIONS
LIMITS
VOLTAGE CUR-
CHARAC- Vdc RENT RCA9116C RCA9116D RCA9116E UNITS
TERISTIC Adc
VC E VB E •c
-140a -1
-120a - - -1 -
'CBO
-100a -1
-140 1.5 - -1 - - -
'CEX -120 1.5 -1
-140 1.5 - -5 - -
'CEX
T C =150°C -120 1.5 -5 _ mA
-70 - -1 —
'ceo
-60 -1 - -
l
B=
-5 - -1 - -1 - -1
'ebo
hF E -2 -5C 25 150 25 150
-2 -7.5C 10 100
-2 -10C 10 10
V CER (sus)b -150 - -130 - -110 -

-0.2
R BE <100O
V CE0 (sus)b -0.2 -140 - -120 - -100 -
v EBO -5 - -5 - -5 - V
l
E
= -1 mA
VBE -2 -7.5C - - - -3
-2 -5C -2 -2
V CE (sat)
= -0.75A -7.5C - - - -1.5
l
B
= -0.5A -5C -1 -1
'S/b
t =1s -35 -5.71 - -5.71 - -
p A
nonrep. -25 -8
Ih
fe |
-10 -0.5 4 - 4 - 4 -
f = 0.5 MHz
2 - 2 - 2 - MHz
*T
C ob -10a - - - 1000 pF
1000 1000
f = 0.1 MHz
R 0JC -10 -10 - 0.875 - 0.875 - 0.875 °C/W
* 2N-types in accordance with JEDEC registration data format JS25 RDF1 , Issue 1
3 V CB b CAUT, ON: Sustaining voltages V CEX (sus), V CER (sus), and c Pulsed; pulse duration = 300 us,
V CE q(sus) MUST NOT be measured on a curve tracer. duty factor = 1 .8%.
d Measured at l c = —0.1 mA.
252.
! 1
POWER TRANSISTORS
2N6648, 2N6649, 2N6650, RCA8350, RCA8350A, RCA8350B
10- Ampere P-N-P Darlington Power Transistors Features:

40-60-80 Volts, 70 Watts High reverse second-breakdown capability
Gain of 1000 at 5 A
Applications:
The 2N6648, 2N6649, 2N6650, and They are supplied in hermetic steel
all Hammer drivers
RCA8350, RCA8350A, RCA8350B* are JED EC TO-204MA packages. Series and shunt regulators
monolithic silicon p-n-p Darlington tran-
sistors designed for low- and medium-fre- Qc TERMINAL DESIGNATIONS
quency power applications. The high gain
of these devices makes it possible for them
to be driven directly from integrated cir-
cuits. The 2N6648 and RCA8350 are
complementary to the 2N6383; the < o o
2N6649 and the RCA8350A are comple-
mentary to the 2N6384; and the 2N6650
and RCA8350B are complementary to the .J JEDEC TO-204MA
2N6385.
6e
* Formerly RCA Dev. Nos. TA8351 TA8488, and Fig. — Schematic diagram
,
1 for all types.
TA8350, respectively.
MAXIMUM RATINGS. 2N6648 2N6649 2N6650 l0°.

Absolute-Maximum Values: RCA8350 RCA8350A RCA8350B
'CBO -40 -60 -80
* 4
;Er(sus)
A w
R BE = 100« -40 -60 -80 V
J.
^
j(sus)
/(sus)
-40 -60 -80 V I
5
i
io-
8 \
^ s <?-
».
NA.
-40 -80 V »
a
6
o \ \. 1
\ V -
-5 C
& r^
-5 4
-5 V s
-10 -10 -10

\ 1
IS?-'.
A 1 i
-15 -15 -15 A
.
TV 1
i
\1
-0.25 -0.25 -0.25 A
Tc < 25°C 70 70 70 W
Tc > 25°C Derate linearly 0.56 _ W7°C Fig. 2 — Thermal-cycling rating chart tor
all types.
'stg< 'J -65 to +150 °C
At distances > 1/32 in. (0.8 mm) from

In accordance with JEDEC registration data format (JS-6 RDF-4)
4 I
CASE TEMPERATURE <TC )*2S*C WK CASE TEMPERATURE (Tc )-IO0*C !
(CURVES MUST BE DERATED LINEARLY SB

WITH INCREASE IN TEMPERATURE! |||1||||||||| |
1 XctMAlO ifi
"^^BPllllll 1 1 HlllllllliffMffll^MI j PULSED 1 I
WfcSEJ)PERATION*i
I C I"AX IPW SED|g J iiiiiiiiiinnii
-15 -15
I C (MAX.) CONTINUOUS |
-K> -K) IlllllllM
B
IcIMAX.)" 1
p
BfBI
pi 191
i\>] i!v f 1a El !h V^BS 11
& mMiiykiiOM' u
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4
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Hi: •
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1
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f T ,
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r
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1 -. ^for
.
hIt £W 11
SINOLE
5 '
: NONREPETITIVE s •
° t 1 PULSE ~ T'lMj-lfclBllfllttO
4
\
§ I . '•flffl
Ijj;
:::
i44
i^tesELyBH ||^-
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It'
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o T- "FOR SINOLf JB:
r :
\ Bit * niniiTu TIVE IE f
T
PULSE [" .i
j:j! ::H Hi: jii: |30«»^f :.
! is -^
hi |i« mem
Hit
:::jjt:
1-
id
!
-0.1 -0.1 E ffi
if
44WT liif jllli
»CE0< IA C. 10 vim 664S.R AB3 „)9 ---fei W { ^ff 1-^
V C EO< •A «• - ec VIZ WS49.RCAS 3SOA) 1 iTffiffll
VCEO' X. 8C VIZ 6650. R CAS 55081

1 V CE0 (MAX)--40V(2N«6 48.RCA83! «i 1 Ojl
2 2
M) j
Ml
-001
VC E( INu>x.)--e OVI2NSS J0.RCAS3* oei! Mil
C0LLFCTOR-T0-EMITTER VOLTASE (Vc£) —V 92CM- 50752 92CM-30733
Fig. 3 — Maximum operating areas for all types. F/gr. 4 — Maximum operating areas for all types at Tq= 100 C.
253
POWER TRANSISTORS
2N6648, 2N6649, 2N6650, RCA8350, RCA8350A, RCA8350B

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25°C Unless Otherwise Specified
'-'
V^
1
* 2
TEST CONDITIONS i imitc &y^

A"
CHARACTERISTIC VOLTAGE CURRENT 2N6648 2N6649 2N6650 UNITS
Vdc Adc RCA8350 RCA8350A RCA83508 «'V
jT/f \
'CEO
V C E VBE
-40
ic b MIN. MAX.
-1
MIN. MAX. MIN. MAX. p*
5" & i
-60 -1 mA
-80 -1
-40
'CEV -60
1.5
1.5
r=~ -0.3
- -0.3 - 10
e a
-80 1.5 -0.3 COLLECTOR CURRENT del —A

»2CS-20«40ftl
-40 1.5 -3
Tc= 150°C -60 1.5 - - -3 - Fig. 5— Typical dc beta characteristics for
-80 1.5 -3 for all types.
'EBO 5 - -10 - -10 - -10 mA

VcEO(sus) -0.2a -40 - -60 - -80 -
lo*
VCER(sus) 10LLECTOR-TO-EMITTER VOLTAGE <V C E> —'V
-0.2a -40 - -60 - -80 - V CASE TEMPERATURE (Tc >. 25*C
rbe = 100
VcEV(sus) 1.5 -0.2a '-40 - -60 - -80 -
3 ', "
hFE -3 -5a 1000 20,000 1000 20,000 1000 20,000
-3 -10a 100 100 100 J
|io -
-3 -5a - -2.8 - -2.8 - -2.8

VBE -4.5* -4.5* r
"
-3 -10a -4.5* V S 2
-5a -0.01a - -2 - -2 - -2 J,
10-
VcE(sat) -10a -0.1 a -3* -3* -3* V a 4 -
VF 10a - 4 - 4 - 4 V
i
1
hfe 0.001 0.01
f = 1 kHz -5 -1 1000 1000 1000

Ihfel
Fig. 6— Typical small-signal gain for all types
f = 1 MHz -5 -1 20 20 20
Es/b
L =3mH, 1.5 -4.5 30 - 30 - 30 - mJ
Rbe = 100 n }\i
|V.wffc
'S/b -35 -1 - -1 - -1 -12
tttttrrnttr
-
& cAtPjfir . -1JJ-
t = 1 s,
-25 -2.8 -2.8 -2.8 - A 1
1
-4,o -
ir
:
til
nonrep. j-U-L
j-
R 0JC - 1.75 - 1.75 - 1.75 °C/W
*.°
$(Mi$^ ff"
llll 1
jlffi
* accordance with JEDEC registration 3 -ti
In data format (JS-6 RDF-4).
a Pulsed: Pulse duration = 300 jus, duty factor = 1.8%.
'
— or
HIlllNlJIIIr^
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [vcEUolll-V
-5 4
Fig. / — Typical saturation characteristics

for all types.
CASE TEMPER TURE ITcl-2S*C: |l|||||l|jli[M: (V cc )-- 20V

COLLECTOR-TO-EMITTER VOLTAGE IVCE»— S V -
|44-1 1
lBrtK > IC/X>0,Tc-25 , C

1 1 1 1 1
1*
-IS
[H
-'• ii Ijfjff
M '
tyfc \\\\\\\\\\\nn :
^?
3ft:?'gi r H:* o*
£ ->2
I : a.
°
\\\\\\\\\\\\\\\\\\^M\\\\\\\\\\\\\\\\\ 1
|p53 3-T.S
V ^WfiiiMi
-10
I o.«
8 -. ;
0.4
i Z -l-4f ]}}}mtfcfjM
-2.5
_lr _
OX
-2
6 -A -
pff ™™ -i i
1 """
12
9\
COLLECTOR-TO-EMITTER VOLTAGE SASE-TO-EMITTER VOLTAGE (Vfjjl— COLLECTOR CURRENT (t c l—

S2CS-20B7MI t2CS- 20MARI
Fig. 8— Typical output characteristics for Fig. U— Typical transfer characteristics for Fig. 10 - Typical saturated switching-time
all types. all types. characteristics for all types.
254
POWER TRANSISTORS
2N6666, 2N6667, 2N6668, RCA8203, RCA8203A, RCA8203B

10- Ampere P-N-P Darlington Power Transistors Features:
High reverse second-breakdown capability
40-60-80 Volts, 65 Watts
Applications:
Gain of 1000 at 3 A (2N6666, RCA8203)
Gain of 1000 at 5 A (2N6667, 2N6668, RCA8203A, RCA8203B)
Hammer drivers
The 2N6666, 2N6667, 2N6668, and These devices are supplied in the JEDEC
RCA8203, RCA8203A, RCA8203B are TO-220AB straight-lead version of the
monolithic silicon p-n-p Darlington tran- VERSA-W ATT package TERMINAL DESIGNATIONS
sistors designed for low- and medium-
Optional lead configurations are available
frequency power applications. The high e
upon request. For information, contact
gain of these devices makes it possible for
RCA Sales
your nearest Office.
them to be driven directly from inte-
grated circuits. The 2N6666 and RCA
8203 are complementary to the 2N6386;
the 2N6667 and RCA8203A are comple- r BOTTOM VIEW *cs-27 5 „
mentary to the 2N6387;and the 2N6668
and RCA8203B are complementary to
the 2N6388>
< < JEDEC TO-220AB
•Formerly RCA Dev. Nos. TA8204, TA8487 and

TA8203, respectively. i
^Technical data for 2N6386-2N6388*are given in

RCA Bulletin File No. 610. QE 92CS-20863RI
Fig. 1 — Schematic diagram for all types.

2N6666 2N6667 2N6668
RCA8203 RCA8203A RCA8203B VOLTACE APPLES OHUf 10 THE 0ISSIMTI0N-
v CBO -40 -60 -80 V LMTED PORTION AND THE I %/b -LIMITED
V CER (sus) CURVE. DO NOT DERATE THE

SPECIFIED VKLUE FOR I c MAX
R BE = 100 ft -40 -60 -80 V
V CE0 (sus) -40 -60 -80 V ago
V CEV (sus) |5g wo
*
V BE = -1.5V
v EBO
-40
-5
-60
-5
-80
-5
V
V
nl » Bill
*
'c -8 -10 -10 A « OT
'CM -15 -15 -15 A hi \\\\\\\\\W
:
ttffifr 4J-
*
 25°C derate linearly 0.52 W/°C CASE TEMPERATURE (Tc l-
* Tstg- TJ 65 to +150 °C
TL . Fig. 2— Derating curve for all types.
At distances s^ 1/8 in. (3.17 mm)
from case for 10 s max ___^__ 235 ————^_ °C
•In accordance with JEDEC registration data format US-6 RDF-4).
I6« COLLECTOR CURRENT Itrl •-!*

COL LEC TOR-TO-EM ITTER VOLTA 0E(V l— 5V
CE
CAI E 1 ZMPERATU « (TC ).2S-C
*
I
I 10* i :
6;
V
«ts
3
<
,
*
<b_ 3
<~
* 2
\ J, io-
'd£
•$y> 4 •
a «
z
<& 2
io
4 s
V *
4

* V * * '
\ COLLECTOR CURRENT (I c )-A
FREOUENCYffl— MHl
92CS-26424 92CS-2M«5M1
Fig. 3— Thermal-cycling rating chart for all types. Fig. 4 — Typical dc beta characteristics Fig. 5— Typical small-signal gain
255
V
POWER TRANSISTORS
2N6666, 2N6667, 2N6668, RCA8203, RCA8203A, RCA8203B

ELECTRICAL CHARACTERISTICS, 4f Case Temperature (Tq) =25°C Unless Otherwise Specified

SYMBOL Vdc Adc RCA8203 RCA8203A RCA8203B UNITS
VCE VBE "C IB MIN. MAX. MIN. MAX. MIN. MAX.
'CEO -80 -1
-60 - - -1 -
-40 -1
mA
-80 1.5 -0.3
-60 1.5
- - -0.3 -
ICEV
-40 1.5 -0.3
Tc = 25°C 1 -80 1.5 -3
-60 1.5 - - -3 -
-40 1.5 -3
5 - -10 - -10 - -10 mA
lEBO
v CEO< sus -0.2a -40 - -60 - -80 -
)
VcER(sus) - - -
-0.2a -40 -60 80 V
rbe = ioon
1.5 -0.2a -40 - -60 - -80 -
VcEV(sus)
-3 -3a 1000 20,000
-3 -5a 1000 20,000 1000 20,000
hFE -8a
-3 100
-3 -10a 100 100
-3 -3a -2.8
-3 -5a - -2.8 - -2.8
VBE - V
-3 -8a -4.5
-3 -10a -4.5 -4.5
-3a -0.006a 2
-5 a -O.Oia - - -2 2
VcE(sat) - V
-8a -0.08a -3
- 10a -O.ia -3 -3
8a - 4 .- -
VF V
10a 4 4
hfe
= kHz -5 -1 1000 1000 _ 1000 _
f 1
Ihfel
-5 20 ._
20 _
f = 1 MHz -1 20
E s/b
-4.5 30 30 - 30 - mJ
L = 3mH, 1.5
RBE = 100 S2
IS/b -
-20 3.2 -3.2 - -3.2 A
t = 1 s, nonrep.
^ - - - 1.92 °C/W
R 0JC 1.92 1.92
a Pulsed: Pulse duration = 300 ms, duty factor = 2%.

*ln accordance with JEDEC registration data format (JS-6 RDF-4).
CASE TEMPERATURE (Ti-I-28'C ||||||||||ffffft
COLLECTOR-TO-EMITTER VOLTAGE V CE )-3 V ( 4 :
-15
She -8
1
x 1- -l»
mmM\ Hill llrMrllWI
i ( 1 1 |
gjP$HrrrM
- -i0
gjft
ait 1 "' 2
° sttttfflittttiiiiyii'-io'i
-10
75 : Mill tlllllllllMI 1 1 II ».
I" ° -8 fllTTTTTTTTTT| ->
-J -6 Hllllllllllll|||||||||-g|
° -4
-J.S ill i;ii I nimin-'
-Z
BASE-TO-EMITTER VOLTAGE (Vbe'-V COLLECTOR-TO- EMITTER VOLTAGE 1VCE I—

Fig. 6— Typical input characteristics
for all types.
for all types.
256.
A V —
POWER TRANSISTORS
2N6666, 2N6667, 2N6668, RCA8203, RCA8203A, RCA8203B

17.5 4
COLLECTOR-TO-EMITTER VOLTAGE (V CE > —3 V i '
CASE TEMPERATURE (TC )«29*C \u\t

ttf*
(CURVES MUST BE DERATED LINEARLY 15
1 In' :r:
x -jt-iJ+HU ii '
1 '° Htt--^>**4J*444- ii T'-'-it

I 7.5
fflîf
- -
%j TV
J Vflfttti
i
2.5
"tttf^r
±
BASE-TO-EMITTER VOLTAGE (V BE I—
92CS - 24907RI
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [vce<mI)]-V
COLLECTOR-TO-EMITTER VOLTAGE (VCE>— V —

Fig. 10 ' Typical saturation characteristics
for all types.
Fig. 8 -^Maximum operating areas for all types of Tq - 25 C. CASE TEMPERATURE <T C >-2S*C
INDUCTANCE <L>-3mH
BASE -TO- EMITTER RESISTANCE IR B
CASE TEMPERATURE (Tq) IOO*C
I C (MAX.) PULSED
(2N6666,7,8 .RCA8203A.B)
LSE OPERATION 1
Fig. 12 — Minimum values of reverse-bias second

breakdown characteristic (Eg/b^
for all types.
COLLECTOR SUPPLY VOLTAGE (V cc >-- 20V

lBClB2'IC'S00.Tc'25*C
1.4
1.2
>^f
^s.
5. 0.8
1
Z 0.6
0.4
tr
0.2
0.1
COLLECTOR CURRENT II C I—
-GO 92CS-208A
-K> -60 -KX> -1000
COLLECTOR-TO-EMITTER VOLTAGE (VCE ) — Fig. 13 — Typical saturated switching-time
92CM-30730
Fig. 11 — Maximum operating areas for all types at Tq = 100 C.
257
POWER TRANSISTORS.
2N6669
Epitaxial-Base, Silicon N-P-N VERSAWATT Transistor

Features:
Switching speed
General-Purpose, Medium-Power Type for
Switching and Amplifier Applications
The RCA-2N6669* is an epitaxial-base silicon shunt regulators, automotive voltage regu-
n-p-n transistor supplied in the VERSAWATT lators, and driver stages for high-fidelity
package. This transistor is intended for a amplifiers.
wide variety of medium-power switching
and amplifier applications such as series and •Formerly RCA Dev. No. TA9105.

'CBO 40 V BOTTOM VIEW
30 V
5 V
10 A JEDEC TO-220AB
4 A
1.4 A
P T (MAX.)<40W
;25°C 40 W
100°C 16 W *
1 A%
> 25°C 7- 2
At T c
T stg- T J
T L (During soldering):
Derate linearly
-65 to
0.32
150
W/°C
°C
1
'°
/A
^ ~>/ \
k^Cv
At distance 0.1 25 in. (3.17 mm) from case 3a&
for 10 s max °c s .
\ 1 \ ^\v\
In accordance with JEDEC registration data format (JC-25 RDF-1 ).
" 2
As
V V
V \\\
vYK\
x

• 2CS-I100JRI
Fig. 1 - Thermal-cycling rating chart.
t 6 I 4 6 8| 2 30 4 • 8
10 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V COLLECTOR-TO-EMITTER VOLTA6E(VCE)- V
92CM- 29997
Fig. 2 — Maximum operating areas at Tq = 25 C. Fig. 3 — Maximum operating areas at Tq- 100 C.
258.
.
POWER TRANSISTORS
2N6669
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 25°C jooo8 !
" 6
TEST CONDITIONS LIMITS < 23- c
CHARACTERISTIC
VOLlrAGE CURFIENT
2N6669 UNITS
sK
V dc A
VC E v Be Min. Typ. Max. f I00-
'c >B v*>
z VXÂ
20 - - 0.1 mA 'V.
'ceo
40 -1.5 - - 0.1
V c
'CEV mA ,.
Tc = 100°C 20 -1.5 - - 5.0 I *
5.0 - - 1.0 mA o 10
'EBO i i 5 3
V CE0 (sus) 0.2 30 - -

COLLECTOR CURRENT (I r )-A
V
V CER (sus) - - 4 — Typical dc beta characteristics.
0.2 40 Fig.
R BE = 50 ft
2 5a 20 - 100
*FE 2V
28 COLLECTOR-TO- EMITTER VOLTASE VCE>
V BE (sat) 5a 0.5 - - 2.0 V (
»
5a 0.5 1.0 I
V CE (sat) _ _ V I
10 a 1.0 2.5
It 20
cobo
V CB = 10 V, f = 1 MHz 50 _ 150 pF 1
K
'•
h fe| *
l 2 0.5 10 - 70 o
12
f = 1 MHz *
8
25 1.0 i
'S/b
_ - A
t = 0.5 s, nonrepetitive 10 4.0 3 4
td
c 5.0 0.5 - 0.03 0.05
C - 2 468, 2 4 « 8
"
5.0 0.5 0.2 0.3 COLLECTOR' CURRENT (I C )-A
tr
JUS
98CS .50, M
ts
C 5.0 0.5 - 0.3 0.5 Fig. S — Typical gain-bandwidth product.
tf
c 5.0 0.5 - 0.3 0.5
R 0JC 10 4 - - 3.125 °C/W

CASE TEMPERATURE! |1J|||||||||||||||||I||J|||||||II Mill MUUJJ
*Minimum and maximum values and test conditions ^CAUTION: The sustaining voltages felli™!^^
in accordance with JEDEC registration data format JC-25 RDF-1 V CEO (sus) and V CER (susl MUST NOT T 5
a Pulsed; pulse duration = 300 ais, duty factor ^ 2%. be measured on a curve tracer.
c V rr = 30V,l B1 =-l o , Z 4
nBmnttttttlffllMmrrrff 111 lltil

1111*°'™^^
o 3
O lllfllll 1 llllllllllmlllllllllllllllllllllll TO^^ffl

S 2 ffT^t^WTTTTTTTTTTTT^TTTffffffTTTTTnHTTTnTTTTTI IMMIIMIIIIIH l'*y*- "f "ti
1
8 ,
10 12
COLLECTOR-TO-EMITTER VOLTAGE (VCE )-V 92CS-:
Fig. 6— Typical output characteristics.
ic „Wffl x ai -is ic
i-°
( FORCED lifE'li" 10 lllllllll
HI
W I'-mf
? 10 600
1
£ • 2
1-
K
^
3
1
*
iîiiia
u 4
I IrrTlTi Inn ' H
8
2 B0
i
C i z I 4 E 6 7 8 • l<
BASE-TO- EMITTER VOLTASE IV BE )-V COLLECTOR CURRENT (I c )-A

92CS-30I6S
92CS- 30467
Fig. 9— Typical saturated switching
Fig. 7 — Typical saturation characteristics. Fig. 8— Typical base-to-emitter saturation
characteristics.
characteristics.
259
•
POWER TRANSISTORS.
2N6671, 2N6672, 2N6673

Features:
5-A OwHskMmt Power Transistors 100% High-Temperature Tested for
125°C Parameters
High-Voltage N-P-N Types for Off- Line Power Supplies and Other
High-Voltage Switching Applications High Voltage Ratings:
V CEX = 350 V to 450 V
The RCA-2N6671, 2N6672, and 2N6673* high-speed transistors are 1 0O-per-cent tested
Low V CE (sat) at c = 5 A l
Switch Max series of silicon n-p-n power for parameters that are essential to the design
transistors feature high-voltage capability, of industrial high-power switching circuits.
Steel Hermetic TO-204MA Package
fast switching speeds, and low saturation Switching times, including inductive turn-off
voltages, together with high safe-operating- time, and saturation voltages are tested at Applications:
area (SOA) ratings. They are specially de- 125°C, as well as at 25°C, to provide infor-
signed for use in off-line power supplies and
Off- Line Power Supplies
mation necessary for worst-case design.
are also well suited for use in a wide range of High-Voltage Inverters
The RCA-2N6671, 2N6672, and 2N6673
inverter or converter circuits and pulse-width- Switching Regulators
series transistors are supplied in steel JEDEC
modulated regulators. These high-voltage.
TO-204MA hermetic packages.
Formerly RCA8767, RCA8767A, and TERMINAL DESIGNATIONS

RCA8767B, respectively.
2N6671 2N6673
* V CEV
V BE --1.5V 450 550 650
*
JEDEC TO 204MA
V CEX (Clamped)
V BE --1.5V 350 400 450 V
* v CEO 300 350 400 V
* v EBO H V
i
c (sat) R A
* »C
«»
A
„, 'cm m A
••• a A
! 'b
—
i
Tc up to 25°C isn ,
W §
Tc above 25°C, derate linearly _^_ flM W/°C o
Sioo
Tj tn?00 °C
:?rAt distance > 1 /1 6 in. (1 .58 mm) from
&
£ n sMfcf j4J i
J 1 1
8
seating plane for 10 s max __^_ £ 50

iJPg
25
25 50 75 100
IPS
125 ISO
CASE TEMPERATURE (T c )— "C
ITS
>
200 225 250
Fig. 1 — Dissipation and 1$^ derating curves for

all types.
t 200 COLLECTOR-TO-EMITTER 1 Tj(MAX) 200*

C
o VOLTAGE (VCE )-3V
K KX> ,0
i >
z
K
l-_
,
>J25*C £ ,
N>
IS
i ^S
la " 25*c">
t
I 4
* 5%
H!
T
s
3
9
CASE TEMPERA TURE <T C ) - -40"C"

8
s
•X
^ s
1,0 i [NA s
.
8 .
ai to
1
i
• 4 1 1 „ 1 1
1 r 1 l« *
PULSE WBTH (!,)-• COLLECTOR CURRENT (I c )-A NUt IBEI F THERM/ IL CYC -ES
ttct-so«««
•ZC3-2998I
Fig. 4 — Thermal-cycling chart for all types.
Fig. 2— Typical thermal-response characteristic Fig. 3— Typical dc beta characteristics for all types.
for all type*.
260
. ' V '
. POWER TRANSISTORS
2N6671, 2N6672, 2N6673
ELECTRICAL CHARACTERISTICS 1
Ib-Ic's|
1
X 1
TC .-40'C
o ,
TEST CONDITIONS LIMITS < TC -I«»«C
Tc • 2S'C
2N6671 2N6672 2N6673 UNITS
TERISTIC A. si
Min.j Max. Min. Max. Min.l Max.
§1-
TC = 25°C
450 -1.5 - 0.1 - Jg2-^ 'dp*
^^*&c$&p
SSo..
'CEV 550 -1.5 0.1 - mA
650 -1.5 Q,1 O • -""d*
'ebo -8 - 2 - 2 - 2
V CE0 (sus)b 0.2a 300 350 - 400 - V I 10
COLLECTOR CURRENT <I C )-A
hFE 3 5a 10 40 10 40 10 40 »2CS-t»MMI
V BE (sat) 5a 1 - 1.6 - 1.6 - 1.6

Fig. 5— Typical collector-to-emitter saturation voltage
as a function of collector current for all types.
53 1 — 1
— 1
— 1
V CE (sat)
83 4 2 2
V lB-Ic'5|
V C EX b
(Clamped Eg/^) -5 5 ie 350 - 400 - 450 o
L=170/iH, -5 3e
8 200 250 300 IT'
R BB =5J2
" 5
's/b 25 6 1 - 1 - 1 - s
t$ -* *
|h
fp | f=5MHz 10
10
0.2
0.2
3
15
12
60
3
15
12
60
3
15
12
60 MHz
ue
1
^ m
~~^J22*- —
™-
^-"Z;
*T
Cobo f=0.1 MHz 10 c 50 300 50 300 50 •300 pF
°j
— case S5^« El,cl
d - - - I
td 5 1 0.1 0.1 0.1
tr
d 5 1
- 0.5 - 0.5 - 0.5
t
s
d 5 ie - 2.5 - 2.5 - 2.5
tfd 5 ie - 0.4 - 0.4 - 0.4 *2C$-X9»M

MS Fig. 6— Typical base-to-emitter saturation voltage as
a function of collector current for all types.
V cc =125 V,
L=170/iH, ie - - "
5 0.4 0.4 0.4 4 COLLECTOR -TO-EMITTER
r c =25 n VOLTAGE (VCE )> 3 V
Collector clamped
to V CEX < t -— --
Tc = 125°C g
*>
450 -1.5 — 1
- ™l
550 -1.5 1 - mA -«0< -
'CEV
650 -1.5 1
- 2« •C —
V CE (sat) 53 1
- 2 - 2 - 2 V u
S
-SSTfS*6
•
m *
tr
d 5 1 - 0.8 - 0.8 - 0.8
ts
t
d
d
5
5
ie
ie
-
-
4
0.8
-
-
4
0.8
-
-
4
0.8
1
—
f
Ms COLLECTOR CURRENT lie* —A
MCS-MMS
<c
V cc =125 V, Fjg. 7 — Typical base-to-emitter voltage as a function
L=170pH, 5 ie - 0.8 - 0.8 - 0.8
R c=25 n CASE T EMM MATURE(TC ).2»»C^
Collector clamped
V CEX
mm if
to tijM
ft H IMP
1 inn iiii!itt<HBfltt.i( Sol
R 0JC - 1.17 - 1.17 - 1.17 °C/W 1 iwttir oo a
MOl
* In accordance with JEDEC registration data. value.

'CB I
a Pulsed: pulse duration = 300 us, duty factor ^2%. = 125 V. t_ = 20 ms.
D CAUTION: The sustaining voltage Vq E q(sus) u 4
and Vq^ x MUST NOT be measured on a curve tracer.
i Hags
y" cul<"t
",'iiirimitirnTiiiiiiiiiiiiiiiiiittti
C> 4 e a 10 2
COLLECTOR-TO-EMITTER V0LTA8E (Vfcf)—
MCS- »*M
Fig. 8— Typical output characteristics for all types.
__261
POWER TRANSISTORS
2N6671, 2N6672, 2N6673
2 300)400 6 8 I
350 I000
COLLECTOR-TO-EMITTER VOLTAGE <VCE)-V
92CM-29979RI
Fig. 9 — Maximum operating areas for all types (Tq = 25 C).
10 " " " "100

COLLECTOR-TO-EMITTER VOLTAGE <VC r>- V
*•*•
92CM-29M0RI
Fig. 10 — Maximum operating areas for all types (Tc = 100 C).
262
A A ' A
POWER TRANSISTORS
2N6671, 2N6672, 2N6673

CME TEMPERATURE (TC )*tS*C CAW TEMPERATURE (Tc ) CASE TEMPERATURE (TC )>2S*C
ttS*CJg|
Xft.-X*, X Bl" A lllllllllllllllllllllttttt
*f«» IHlllllllllllllllllll
Vtc-IZSV lBz-2* ffliPIJtf'ffiffiM
vcc , '*»vffjt||||||lli||UH^ffi
v* IK
5
H
B ** llllllllllllHBffiBl « WOO 3 E 1000 ip • 20 m« niiiiiiiiii) ii t
I0OC
o
o I
I i *
5. 1
*« IHlllllllllllllllllll i
800 ?4 1
4 ~*
HUHHHIIIMIBffl jl
i~
&*« I In Iiiiilif nTirfTTJJ 'tJlllllllllllll
IIIIHHIIIIIIIIIIIIH
llllllHllllllllllffl'
w
p lL'!
:
l I'-^soJ
miimiittinttîiiiiiiiiiiiiiis
M
li Mlllllill ! t S.0D ?I«oo
it™
l^lM^^ttP^î^Ml^ tiiB
||||
mBlMHRSnmf
s
(A
z
1 1 &
o
s
1
H
> anr < 200 vl 1 < 200

Will I ''IfttiDiiiiiinllliffl
IrTrtrUftftfffiffffit iTfmmt
d
*y III lijmTntffnnfl ^^''UtttftjtttttttttimiiiiTTi 'i
lllljll
HI || | io
COLLECTOR CURRENT del— COLLECTOR CURRENT (I c l — COLLECTOR CURRENT (!<;) —A
Fig. 11 — Typical saturated switching time Fig. 12 — Typical saturated switching time Fig. 13 — Typical saturated switching time
characteristics for all types. characteristics for all types. characteristics for all types.
IfSA IIIIIIIIIIIIIHIH CASE TEMPERATURE (Tc )> 25 *C

lB|"IA ^jh:
z»i— Xte-i* jumumuuui
uH *c "t8V
KXX, 'p"
lB 2 --2A
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IIIIIIIIIIIIIHIH
s
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ft" t 3 &
....
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if- II ;
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Coto
X ~i ijtj Mii
5 200
«S T jjff 1
t^-T
88 n
100 BO 4 2 4 e
)— *C
• "i Tb^
COLLECTOR CURRENT del — CASE TEMPERATURE <TC
COLLECTOR-TO-BASE VOLTAOE (\fc B » v O" —
EMITTER-TO-BASE V0LTA8E (V£B>— V
•tCS-mtt
Fig. 14 — Typical saturated switching time —
Fig. IS Typical saturated switching time F/ff. 7ff - Typical common-base input or output
characteristics for all types^ of
characteristics as a function capacitance characteristics as a func-
case temperature for all types. tion of collector-to-base voltage or
emitter-to-base voltage for all types.
W« t c (PEAK)
I2CSM3M
Fig. 17 — Oscilloscope display for measurement of

clamped induction switching time (tc ).
263
POWER TRANSISTORS.
2N6674, 2N6675
10- A SwItehMaX Power Transistors

Features:
100% High-Temperature Tested for
High- Voltage N-P-N Types for Off- Line High Voltage Ratings:
Power Supplies and Other High-Voltage V CEX * 350 to 450 V V
Switching Applications Low V CE (sat) c = 10 A
at l
Steel Hermetic TO-204MA Package

The RCA-2N6674 and 2N6675* Switch Max times, including inductive turn-off time, and 100°C Parameters
series of silicon n-p-n power transistors fea- saturation voltages are tested at 100°C, as
ture high-voltage capability, fast switching well as at 25°C, to provide information Applications:
speeds, and low saturation voltages, together necessary for worst-case design.
Off- Line Power Supplies
with high safe-operating-area (SOA) ratings.
The 2N6674 and 2N6675 transistors are sup- High-Voltage Inverters
They are specially designed for off -.line power plied in steel JEDEC TO-204MA hermetic Switching Regulators
supplies, converter circuits and pulse-width-
packages.
modulated regulators. These high-voltage,
high-speed transistors are 1 00-per-cent tested
for parameters that are essential to the design * Formerly RCA Dev. Type Nos. TA91 14D and TERMINAL DESIGNATIONS
of high-power switching circuits. Switching TA91 14E, respectively.
(FLANGE)

2N6674 2N6675
* V CEV
V BE --1.5V 450
V CEX (Clamped)
V BE --1.5V 350 450
JEDEC TO-204MA
* V CEO 300 400
* V EBO
Ip(sat) m A
* I is A
'cm 20 A
„
'b
R A
:
Tc up to 25°C 175 W
Tq above 25°C, derate linearly 1 W/°P
: vj -fiR to 700 Op
At distance ^1/16 in. (1 .58 mm) from

seating plane for 10 s max 335 °r.
25 SO 75 I0O 125 ISO 175 200 225 250

CASE TEMPERATURE (T C )-'C
Fig. 2— Dissipation and !§£ derating curves

for both types.
S: a
Z
^
S
5
g
ioo
.
c
5
"1
^ r^s >tr
z ^v*o b
<
* z
10
It \ \
* % ! 4 * •«>
COLLECTOft-TO -EMITTER VOLTAK (V^f)
'
—V
* • Vxx>
92CM-304R) Fig. 3— Thermal-cycling chart for both types.

Fig. 1 — Maximum operating areas for both types
(TC = 2S°C).
264.
t AA
. POWER TRANSISTORS
2N6674, 2N6675
'°8
ELECTRICAL CHARACTERISTICS
Z
4
W 2
VOLTAGE CURRENT
CHARACTERISTIC 2N6674 2N6675 UNITS
Vdc Adc 1 8
v CE V BE >C 'B
Min. Max. Min. Max. i :
i
TC = 25°C m Z
A
450 -1.5 - 0.1 - fo.i
'CEV 650 -1.5 0.1 N 6
-7 - - mA 3 «
'EBO 2 2
V CE0 (sus)b 0.28 300 - 400 - V 0.01
hFE 2 10 a 8 20 8 20 PULSE WIDTH (t.) —

MCS-MM7
V BE (sat) 10 a 2 - 1.5 - 1.5
Fig. 4 — Typical thermal-response characteristic
103 2 - 1 - 1 for both types.
V CE (sat) a 5
15 5 V -
-BO COLLECTOR - TO - EMITTER VOLTAGE <Vc£> • 3 V
V C EX b
- - 1 "
(Clamped Eg^) -4 350 450
L=50MH.R B B =2n
10 2
— —
*
V^
"=::;;
30 5.9 1 1
's/b 100 0.35 1 1

s
1 2
^^
c
jh fe |
f = 5MHz 10 1 3 10 3 10
15 50 15 50 MHz |
*T 10 1 -«o»c
Cobo f = 0.1 MHz 10 c 150 500 150 500 pF

- - £ «
td
d -6 10 2 0.1 0.1 8
tr
d -6 10 2 - 0.6 - 0.6 E I » 1 s
COLLECTOR CURRENT del —

ts
d -6 10 2** - 2.5 - 2.5
d -6 10 2** - 0.5 - 0.5 Fig. 5— Typical dc beta characteristics

tf
MS for both types.
V CC =135V, 16
18 lc/5 ill 11 II 11 1 1 1 1 1 1 [1 111 1 1
| llll II 1 ||f
-6 2e - Z L4
L=50/iH,R c < 10 0.5 0.5 O
13.5£2,Collector
J
clamped to
Tc =t00°C
Vqex
450 -1.5 — 1 ~
h,
Till M
'CEV
mA P$o* £fc
650 -1.5 1
- - 8-
V CE (sat) 103 2 2 2 V I 3ff^
tr
d -6 10 2 - 1 - 1 8 oj
ts
d -6 10 2e - 4 - 4 s 6 r a 4 10 II 12 o "a ^m
COLLECTOR CURRENT (15) —A
tf
d -6 10 2« - 1 - 1
MCS-30JM
MS
Fig. 6- Typical collector-to-emitter saturation
*c
voltage characteristics for both types.
V CC =135V,
L=50aiH,Rc< -6 10 2« - 0.8 - 0.8 4 IB 'I C 9
13.5 J2, Collector
clamped to Vq E x O
< 1
R0JC 10 1 °c/w \
a PulMd: pulse duration - 300 n%, duty factor <2%. °V CB value. r^
^
*-
-4Q'C_
L\c v*
^CAUTION: The sustaining voltage Vq E0 («u«) and V CEX dV AC
cc -135V,t p = 20*is. &* 1
25* C
i
'B1 ~'B2- 6
O*
*ln accordance with JEOEC registration data.
0.4
COLLECTOR CURRENTdc) —
92CS-303
Fig. 7 — Typical base-to-emitter saturation

voltage characteristics for both types.
265
j A
POWER TRANSISTORS.
2N6674, 2N6675
JUNCTION TEMPERATU
(Tj) • as«c
isi-iaf"
Vfc c -200V
Ip • 19 fit
'
90 (.H
COLLECTOR CURRENT (I c l— A COLLECTOR-TO-EMITTER VOLTAGE (VCE I —V COLLECTOR CURRENT (I c )—

92C3-30377 MCS- 30373
»2CS- 30374
Fig. 8— Typical small-signal forward current
Fig. 10 — Typical saturated-switching-time charac-
Fig. 9— Typical output characteristics for teristics at Tj - 25° Cas a function of
transfer ratio characteristic for
both types. collector current for both types.
both types (f-5 MHz).
JUNCTION
TEMPERATURE (Tj) -IOO*C
X 800 I B| .SA V
8E .-9V
I B2 SSA MAXJ.-90 pH
200 V
700
a
600
20 30409060708090
COLLECTOR CURRENT (Ir) -A
MCS-30379
COLLECTOR CURRENT (I c )— A
MCS- 30310
JUNCTION TEMPERATURE (Tj) — »C » 2C S-303J
Fig. 11 — Typical saturated-switching-time charac- Fig. 12 — Typical saturated-switchlng-time charac- Fig. 13 - Typical saturated-switching-time charac-
teristics at Tj' 100° Cas a function of teristics at Tj - 100° Cas a function of teristics as a function of junction tem-
collector current for both types. collector current for both types. perature for both types.
=='», CASE TEMPERATURE (TC )' ts*c

*
-Sf
•
3!
1A0 cob 4oo Ttar
580 480
CLAMKO COLLECTOR -TO- EMITTER
VOLTMC [vCex (CLAMP ED —V
_
10* I0» MC8- S0U4 10% I C (PEAK)
COLLCCTM-TO-MtC VOLTMC (Vca>— VOR 92CS-30313
EMITTER-T0-8A8E VOLTAM (Vf|)— V
tec- tow*
Fig. IS — Maximum operating conditions Fig. 16 - Oscilloscope display for normalized
Fig. 14 — Typical common-base input (C//^)
for switchingbetween saturation measurement of clamped inductive
or output (C
obo ) capacitance and cutoff for both types. switching time (tj.
characteristics for both types.
266
A
POWER TRANSISTORS.
2N6676, 2N6677, 2N6678

Features:
15-A SwItchMmC Power Transistors 100% High-Temperature Tested for
100°C Parameters
High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Fast Switching Speed
High Voltage Ratings:
Switching Applications V CEX= 350 v to 450 v
Low V CE (sat) at c - 15 A
l
The RCA-2N6676, 2N6677, and 2N6678* switching circuits. Switching time, including Steel Hermetic TO-204MA Package
SwitchMax series of silicon n-p-n power inductive turn-off time, and saturation volt-
transistors feature high-voltage capability, ages are tested at 100°C, as well as at 25°C,
fast switching speeds, and low saturation to provide information necessary for worst- Applications:
voltages, together with high safe-operating- case design. Off- LinePower Supplies
area (SOA) ratings. They are specially de- High-Voltage Inverters
The 2N6676, 2N6677, and 2N6678 tran-
signed for off-line power supplies, converter Switching Regulators
sistors are supplied in steel JEDEC TO-204M
and pulse-width-modulated regulators.
circuits
hermetic packages.
These high-voltage, high-speed transistors are
100-per-cent tested for parameters that are * Formerly RCA Dev. Type Nos. TA91 1 4A,
essential to the design of high-power TA91 1 4B, and TA91 1 4C, respectively.

2N6676
* V CEV
V BE =-1.5V 450 650
* V CEX Stamped)
V BE = -1.5V 350 400 450 V
* V CE0 300 350 400 V
* v EBO _ 8 .
V JEDEC TO-204MA
l
r (sat ) . 15 A
-15 A
'c
'cm .20 A
„
_ 5 A
.„ 'b
* PT
:i**
TL
T c up to 25°C
Tq above 25°C, derate
r
*
At distance
^
^1/16
linearly
in. (1 .58 mm) from

— -65
.175
. 1
to 200
.
.
W
W/°C
°C

"0 25 SO re 100 125 ISO ITS 200 22S ZS0

CASE TEMPERATURE <T C >— *C
Fig. 2- Dissipation and l S/b derating curves for
all types.
*
I
z
3ie
£
3
too
8 -fy
Sr\.
ii
^
V,
i
z
!
h^ s^-*
^>£
*u
< f
6 8
K>
2 4 8 8
I00
2 « « >„
»
HD
\\
COLLECTOR -TO -eilHTT«:A VOLTAOE (VcE> —V NUMBED OF THERMAL CYCLES
92CMJ0390
Fig. 1 — Maximum operating areas for all types

Fig. 3— Thermal-cycling chart for all types.
(TC = 25°C).
267
•
POWER TRANSISTORS
2N6676, 2N6677, 2N6678

ELECTRICAL CHARACTERISTICS I0
e — --
'
——
TEST CONDITIONS LIMITS i \
CHARAC- VOLTAGE CURRENT iu 2 _

TERISTIC Vdc 2N6676 2N6677 2N6678 UNITS
Adc
V CEl Vbe 'Cl 'B Min.| Max. Min. Max. Min. Max. .
t
TC -25°C
450 -1.5
5>
3
2 — _.
0.1
foi
'CEV 550 -1.5 - - 0.1 - o »
6
N
650 -1.5 01
mA
'ebo -8 - 2 - 2 _ 2 i:
OCX
*
V CE0 (sus)b 0.23 300 - 350 - 400 _ V
PULSE WIDTH (tp) —
' h FE 3 15 a 8 - 8 - 8 - *2CS- 30347
'
V BE (sat) 15 a - — _ Fig. 4— Typical thermal-response characteristic
3 1.5 1.5 1.5
for all types.
V CE (sat) 15 a 3 - 1 - 1 - 1
15 a 3 1.5 1 5 1.5
V w COLLECTOR -TO -EMITTER VOLTAOE (V CE ) • SV
V C EX b J '
(Clamped E s/b )
L=50/iH,
Rbb =2 fi
-6 15 3 350 - 400 450 a
N
's/b
30 5.9 1 - 1 - 1 -
$
I
z c
100 0.35 1 1 1
|
h fe f=5
| MHz 10 1 3 10 3 10 3 10 a 10
-40»C
*T 10 1 15 50 15 50 15 50 MHz P r
cobo f=0 - 1 MHz 10 c 150 500 150 500 150 500 pF 4

d -6 - -
4 « » 10
. n
8 • «
td 15 3 0.1 0.1 - 0.1 COLLECTOR CURRENT del —A
d 92CS- 30343
V -6 15 3 - 0.6 - 0.6 _ 0.6 Fig. S— Typical dc beta characteristics
d -6 3e - -
t
s 15 2.5 2.5 _ 2.5 for all types.
d -6 - -
tf 15 3P 0.5 0.5 - 0.5 4 «B'ic a
MS
VV S
cc=200 V,
L=50/iH,
Rc < 13.5 n -6 15 3e 0.5 0.5 0.5
TC =100°C -40»C
I"
450
550
-1.5
-1.5 -
1
- - a 25' C"
£***
& £>
,\<
'CEV 1 mA j>*
650 -1.5 1
0.4
V CE (sat) 15 a 3 - 2 - 2 - 2 V i « «
d COLLECTOR CURRENT (I c ) —A
tr -6 15 3 - 1 - 1 - 1 42CS- 30374
Fig. S— Typical base-to-emitter saturation
d -6 15 3e - - -
ts 4 4 4 voltage characteristics for all types.
d -6 3e - - -
tf 15 1 1 1
jus
f
tc
V CC=200 V,
L=50/iH,
R c <13.5J2 -6 15 & 0.8 0.8 0.8
nejc 10 5 - 1 - 1 - 1 °c/w
"Pulsed: puis* duration - 300 n». duty factor <2%. °V CB value.
^CAUTION: Tha sustaining voltage V CEO (»u») and V CEX dV
cc -200V,t p = 20MS.
'B2-
*ln accordance with JEDEC registration data. COLLECTOR CURRENT (I,.) —A
Collector clamped to Vgcv- MC4-30344
»2C:
Fig. 7 — »/ collector-to-emitter saturation
Typical si
voltage characteristics for all types.
268
V A A
POWER TRANSISTORS
2N6676, 2N6677, 2N6678

CASE TEMPERATURE <TC )»25'
24
22
4
HBIIII tooof
i
M*
K *
3B
^
'•
B fooo
£ 14
tE
l2
3
g » S500
g a
J2O0
d «
i
BASE CURRENT- (Igl— wAJ
4
2
COLLECTOR CURRENT (I c )—
COLLECT** CURRENT (I c ) —» 92CS- 3037T KCS- 30JT3
8— Typical small-signal forward current Fig. 10 — Typical saturated-switching-time
Fig. 9 —
Fig.
Typical output characteristics for all
transfer ratio characteristic for all types characteristics at Tj m 2S°Cas •
types.
If' 5 MHz). function of collector current for
all types.
JUNCTION || | || | IC'OA
TEMPERATURE (Tj) -100'C
1
Jf
000 i b ,-»a vgj.-sv
I B2 S 9 A MAXJ..JO /lH
mm
||||||
FH+£t
6
Vfcc'tOOV
If -tO lit iSiisiiiii
VCC-200V Btttt
R L -I5.50
lp'20jit \90pM
J- h
„.
*
600
SsfSB
2 500 • i
fl400 & 4 a
jjSOO 3
^200 '•r
d
» 100 M H 1 1 1 1 ! 1 1 1 1 1 1 1 T 1 1 1 T 1 iff!1 llllll
!
riuinl 1
COLLECTOR CLAMPED TO Vm), POR
1 HI H H H IH IIIIIIIIIIIHIII4+H
I I
203040SO*OTOBOtOK>0
I II m
JUNCTION TEMPERATURE (Tj)— *C
t« ONLY
COLLECTOR CURRENT (Ic) -A COLLECTOR CURRENT (1(1—

KC3-30379 WC<- 303*0 *Wt- 80>T«
Fig. 11 — Typical saturated-switching-time F/jp. 12 — Typical saturated-switching-time Fig. 13— Typical saturated-switching-time
characteristics at Tj~ 100°Cas characteristics at Tj » lOfPCas a characteristics as a function of
a function of collector current function of collector current for junction temperature for ail types.
for all types. all types.
::::::;Lfi::::::c:
i&iiiiHii&fiiiiiiii
I00 200 300 400

390 490
CLAMPED COLLECTOR -TO- EMITTER
V
COLLECTOR-TO-BASE VOLTABE (VcB>— V OR
" io» VOLTAGE [VCEX (CLAMPED)] —V
•2CB-S03BS
"0*VCEX K>% I C (PEAKI
KCS-303M
EMITTER-TO-BASE VOLTABE <V»»>—
MCS-303M
Fig. 16 — Oscilloscope display for normalized
Fig. 14 — Typical common-base input (Cjoo ) Fig. IS — Maximum operating conditions measurement of clamped inductive
or output (Cg^gi capacitance for switching between saturation
switching time ftg).
characteristics for all types. and cutoff for all types.
269
POWER TRANSISTORS
40310-40314, 40316-40319, 40321-40325, 40327,

40362, 40363, 40537-40539
Silicon Transistors for Audio-Frequency Features:
Hermetically-sealed packages
Linear-Amplifier Applications Pellet bonded to header —
for greater power-handling capability
These RCA transistors are diff used-junction nominal 12-volt vehicular type to 117-volt for greater shock resistance
silicon n-p-n and p-n-p types intended for ac-dc type. Freedom from second breakdown
specific applications in audio amplifiers. 40319 and 40538 are p-n-p complements
They prov.de high-quality economical per-
The use of a |,. silicon devices p,^, more
of 40317 and 40539, respectively
flexibilityin the mechanical and electrical
formance in applications from low- eve input I
desj of a (jf jers since the out t heat

P°« e '- out P ut ges ° f
£ V°
9
50
5 to J'TSupply
""f watts. voltages range f
from the
sinks can be held to a minimum.
N-P-N TYPES IN TO-66 PACKAGE

40310 40312 40313 40316 40318 40322 40324
c
(FLANGE)
V CE0 (sus) 35 60 - - - - 35 V
V CER (sus) - - 300 40 300 300 - V
At R BE - - 500 500 500 500 - Q.
V EB0 2.5 2.5 2.5 5 6 6 2.5 V
c 4 4 2 4 2 2 4 A
l
B 2 2 1 2 1 1 2 A
p r
TC <25°C W
Tc > 25°C, derate
TC = 175°C
Tstg- TJ
linearly
__5_
29
0.17
29
0.17
35
0.2
29
0.17
65 to 200
35
55
0.2
35
0.2
29
0.17
_
W/°C
w
°C
T|_ (During soldering):
At distances >
1/16 in. (1.58 mm)
from case for 10 s max 235 °C
N-P-N TYPES IN TO-39 PACKAGE

40311 40314 40317 40321 40323 40327 40539
V CEO (sus) 30 40 40 - 18 - - V
v CER (sus) - - - 300 - 300 55 V 92CS-275I2
At R BE - - - 500 - 1000 500 ft JEDEC TO-39
v EBO 2.5 2.5 2.5 5 2.5 5 5 V
n-p-n p-n-p
c 0.7 0.7 0.7 1 0.7 1 0.7 A
b 0.2 0.2 0.2 0.5 0.2 0.5 - A 40311 40319
pT :
40314 40362
Tc < 25°C 5 5 5 5 5 5 5 W 40317 40537
T c > 25°C .derate linearly .... 0.029 W/°C 40321 40538
T A < 25°C 1 1 1 1 1 1 1 W 40323
Tstg- TJ -65 to 200 °0 40327
T|_ (During soldering): 40539
from case for 10 s max 300 300 255 300 255 °C
N-P-N TYPES
P-N-P TYPES IN TO-39 PACKAGE IN TO-3
PACKAGE
40319 40362 40537 40538 40325 40363
V CBO - 35 _ V
V CEO (sus) -40 - - - 35 - V
V CER (sus) - -70 -55 -55 - 70 V
- JEDEC TO-66
At R BE - 200 500 500 200 n
V CEV (sus) n-p-n
AtV BE = -1.5V - 35 _ V 40310 40316
V EB0 -2.5 -4 -5 -5 5 4 V
40312 40318
l
c -0.7 -0.7 -0.7 -0.7 15 15 A 40313 40322
l
B -0.2 -0.2 -0.2 -0.2 7 7 A 40324
p r
Tc < 25°C 5 5 5 5 117 115 W
Tc > 25°C, derate linearly 0.029 0.029 0.029 0.029 0.67 0.66 W/°C
TA < 25°C 1 1 1 1 - - W
Tstg Tj , 65 to 200 -65 to 200 °C
T"l (During soldering):
At distances 1/16 > in. (1.58 mm)
from case for 10 s max 230
270
POWER TRANSISTORS
40310-40314, 40316-40319, 40321-40325, 40327,

40362, 40363, 40537-40539
Types: 40321, 40323, 40327, n-p-n

JEDEC TO-39
Package:
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC)=25°C Unless Otherwise
Specified
LIMITS
CHARAC- TEST CONDITIONS 40321 40323 40327 UNITS
TERISTIC Min. Max. Min. Max. Min. Max.
V CB -15V,l E -0,Tc=25°C - - - 0.25 - - ma

'CBO - - - mA
V CB-150 V.lg-O.TÎBO^ 0.1 1 0.1
V CE =150V,R BE =1000fi - 5 - - - 5 ma
>CER
V BE =-2.5 V (40323) 1
mA
'ebo _ _ :
V BE=-5V (40321,40327) 0.1 0.1
V CE0 (sus) IC«100mA* - - 18 - - - V

- - - 300 - V
V CER (sus) l
c-50 mA*,R BE =1000 J2 300
V CB»4 V,lc=50 mA*(40323) 1
VBE V CB-10 V,lc=50 mA* - - V

- 2 2
(40321,40327)
V CE =4 V,l c=50 mA*(40323) 70 350
"FE V CE =10 V,l c =20 mA* 40 250 Audio

25 200
(40321,40327) Type Prototype
V CE =10 =50mA - - 100 typ. - - MHz
*T V.l c 40321 2N3439
R0JC - 35 - 35 - 30 40323 2N2102
— — — °C/W
R 0JA - - 17b
40327 2N3439
* PulMd: Pull* duration - 300 /*, duty factor < 2%.
For characteristics curves end test conditions, refer to published data for prototype.
Types: 40311, 40314, 40317, n-p-n 40319, p-n-p

JEDEC TO-39
Package:
ELECTRICAL CHARACTERISTICS, At Case Temperature {TC)=2SPC Unless Otherwise
Specified
LIMITS
CHARAC- 40317 A
TERISTIC TEST CONDITIONS* 40311 40314 40319* UNITS
V CB =15V,l E -0
Tr =25°C 0.25 0.25 _ 0.25 fA
'CBO
T C=150*C - 1 - 1 - 1 mA
V BE=-2.5 V - 1 - 1 - 1 mA
'ebo
- - - V
V CE0 (sus) l
c=100 mA* 30 40 40
V CE =4V
mA - - - V
Vbe l
c-10 mA*(40317);lc=50 1 1 1
(40311,40314,40319)
V CE (sat) IÎSOmAMÎSmA - - - 1.4 - -1.4" V
V CE =4 V 40 200
= Audio
hFE l
c=10mA*(40317);l c
50 mA*(4031 1,40314,40319) 70 350 70 350 35* 200* Type Prototype
V CE =10 V(4031 1 );V CE =4 V MHz 40311 2N2102
100 typ. 100 typ. 100 typ*
*T (40314,40319),l c=50mA 40314 2N2102
R 0JC - 35 - 35 - 35
°C/W 40317 2N2102
R 0JA - 175 - 175 - 175
40319 2N4036
For p-n-p devices, voltage end current are negative.
* 40319 *Puised: Pulse duration - 300 /is, duty factor < 2%.
For characteristics curves end test conditions, refer to published date for prototype.
271
POWER TRANSISTORS
40310-40314, 40316-40319, 40321-40325,

40327, 40362, 40363, 40537-40539
Types: 40362, 40537, 40538, p-n-p 40539, n-p-n

Package: JEDECTO-39
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC)=2S°C Unless Otherwise
Specified
LIMITS
CHARAC- 40538
TERISTIC TEST CONDITIONS* 40362 40537 40539# UNITS
V CE =-45 V,R B E=500n,
T C=25°C - - -10 - -10
V CE =-65 V,R B e=1000 SI,
'CER TC =25°C -1 /iA
V CE =-60 V,R B e=1000 SI, - - - - -
-100
TC=150°C
V BE =4V -1
'ebo mA
V BE =5 V -1 -1
c=— 100 mA*,R B E=500 SI

l - -55 — -55 —
V CE r(sus) V
c=— 100 mA*,R BE =1000 SI
l -70
V CE =-4V,l c=-50mA" - -1 - -1.8 -
Vbe V
V CE =-4 V,l c =-500 mA* -2.7
lc=—50 mA*,lB=— 5 mA -1.1
V CE (sat) l
c=— 150 mA*, B =— 15 mA
l
- -1.4 - - V
IC=(— 500 mA*,l B =-50 mA -2
Audio
V CE =-4V,l c =-50mA* 35 200 50 300
h FE Type Prototype
V CE =-4 V,l c=-500 mA* 15 90
40362 2N4036
*T V CE =-4 V,l c=-50 mA 100 typ. 100 typ. 100 typ. MHz 40531 2N4036
R0jc - 35 - - - 35
A
°C/W 40538 2N5322
R 0JA - 175 - 175 - 175
40539 2N5320
For n-p-n devices, voltage and current are positive.
40539 *Pulsed: Pulse duration = 300 jus, duty factor < 2%.
For characteristics curves and test conditions, refer to published data for prototype.
Types: 40310, 40312, 40316, 40324, n-p-n

JEDEC TO-66
Package:
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC)=25°C On/ess Otherwise
Specified
LIMITS
CHARAC- 40310
TERISTIC TEST CONDITIONS 40312 40316 40324 UNITS
V CB =15 V,l E =0
'CBO T C =25°C - 10 - 10 - 10
TC =150°C 5 5 5 mA
V BE =-2.5 V 5 — - 5
'EBO mA
V BE =-5 V : 5
V CE0 (sus) - - - _
l
c =100mA* 35* 35 V
Audio
V CE r(sus) l
c=100 mA*,R BE =500 SI 60# - 40 - - - V
- Type Prototype
vBe V CE =2 V,l c =1 A* 1.4 - 1.4 - 1.4 V
V CE =2 V,l c =1 A*
40310 2N3054
hFE 20 120 20 120 20 120
40312 2N3054
*T V CE =4 V,l c =500 mA 750 typ. 750 typ. 750 typ. kHz
- - 40316 2N3054
R 0JC 6 6 - 6 °C/W
40324 2N3054
40310 # 40312 *Pulsed : Pulse duration = 300 f£, duty factor < 2%.
272
POWER TRANSISTORS
40310-40314, 40316-40319, 40321-40325,

40327, 40362, 40363, 40537-40539
Types: 40313, 40318, 40322, n-p-n

JEDEC TO-66
Package:
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C Unless Otherwise
LIMITS
CHARAC-
TERISTIC TEST CONDITIONS 40313 40318 40322 UNITS
V CE =150V,I B =0 - 5 - 5 '- - mA
'CEO
V CE =150V(40318),V CE =
300 V (40313), V B e=
-1.5 V, T€ =25°C - 10 - 5 - -
'CEV mA
T C =150°C 10 10
V BE =-2.5 V — 5
mA
'EBO
V BE =-6 V _ 5 _ 5
— 300 300 " V
V CE r(sus) c=200mA*,R BE =2O0n,
l 300
L=500 mH
—
vBe
V CE =10 V, l
c=100 mA* 1.5
V
lc=500 mA* _ 1.5 _
V CE =10 V, l
c =500 mA* 40 50 75
- -
*FE l
c =100mA* 40 250 Audio
c=20 mA*
l
40 40 Type Prototype
V CE =150V 150 - 100 - 100 - mA 2N3585
'sft
40313
V BE =-4 V - - 50 - 50 - JLtJ
40318 2N3585
E S/b
- 5 - 5 - 5 °C/W 40322 2N3585
R 0JC
* Pulsed: Pulse duration = 300 /LB, duty factor < 2%.
Types: 40325, 40363, n-p-n

JEDEC TO-3
Package:
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC )=25°C Unless Otherwise
Specified
LIMITS
CHARAC- 40325 40363 UNITS
TEST CONDITIONS
TERISTIC Min. Max. Min. Max.
V CB =30 V, T C=25°C 5
mA
'CBO T C =150°C _ 10
V CE =60 V,R B E=200n,

T C =25°C - - - 1
mA
'CER T C =150°C 10
V BE =-5 V 10
mA
'EBO V BE =-4 V _ 5
- - - V
VcE0 (sus) l
c=200 mA* 35
- - 70 - V
V CE r(sus) l
c=200mA*,R B E=200J2
- - - V
v CB0 l
c=100mA,l E =0 35
V CE =4V, c=8A* — 2
VBE
l
- V
c=4 A* l
1.8
c =8 A*, B =800 mA
1.5
V CE (sat)
l l
V
_ -
c=4 A*,I B =400 mA
l
1.1
60
V CE =4V, l
c=8A* 12 Audio
*FE 20 70 Type Prototype
I
C=4 A*
V CE =4 V,I C =3 A - - 700 typ. kHz 40325 2N3055
*T
R0JC - 1.5 " 15 °c/w
|
40363 2N3055
I
*Pulsed: Pulse duration =» 300 /is, duty factor < 2%.

273
—
POWER TRANSISTORS
40406. 40408, 40410, 40407, 40409, 40411

Features:
Silicon N-P-N and P-N-P Power Transistors 40406 & 40407
For Audio-Amplifier Applications V CE0 (sus) - -50 V max. (40406)
V CE0 (sus) - 50 V max. (40407)
RCA-40406-40411, inclusive, are diffused- 40408 are supplied in JEDEC TO-39 her- 40406 is p-n-p complement of 40407
junction silicon n-p-n and p-n-p transistors metic packages; types 40409 and 40410 1 W dissipation rating
intended for use in audio amplifiers. Giving are in TO-39 packages mounted on integral
high-quality performance economically, these heat radiators. The 40411 unit, intended
40408
six devices have power dissipation ratings for use in audio output stages, is in a
of 1 to 150 W. Types 40406, 40407, and steel JEDEC TO-3 hermetic package. Vceo( $us = 90 V max.
>
1 W dissipation rating
40409 & 40410
V CER (sus) = 90 V max. (40409)
40406 40407 40408 40409 40410 40411 V CER (sus) = -90 V max. (40410)
V CE0 (sus) . . . -50 50 90 - - - V 40410 is p-n-p complement of 40409
V CER (sus) - - - 90 -90 90 V
3 W free-air dissipation rating
R BE = 100 n 40411
v EB0 -4 4 4 4 -4 4 V V(; E r(sus) = 90 max.
-0.7 0.7 0.7 0.7 -0.7 30 A Hometaxial-base construction

•c
'B -0.2 0.2 0.2 0.2 -0.2 15 A 150 W dissipation rating
T A <25°C - _
. 1 1 1 _ W
T A <, 50°C . - - - 3 3 - W
Tc < 25°C . - - - - - 150 W
TJ -BR tn +700 °C
JEDEC TO-3
CO LEC TOR TO-EM ITTf R VC LTACE E>- •V

AM BIEN T T MPER ATU RE rA >-2
( COLLECTOR-TO-EMITTER VOLTAGE mc£i- 10V
O POO - 200 1
c J
- -
s
ITS
<$
|
k f
§ ,»
^
| 125 df\ -SS
i
eo
" 100
&
<$ Y
3 40 V
>
1
" — rfl
v\
- ~ JEDEC
¥ TO-39
e so
i
» \
\ x a
A
* 8 «
COLLECTOR CURRCNTIIcl-ni* COLLECTOR CURRENT (I c ) mA

92C5-22427RI (233IR2
Fig. 1 — Typical dc beta characteristic for Fig. 2— Typical dc beta characteristics tor
40406 and 40410. 40407. 40408, and 40409.
-lo COLLECTOR -TO-EMIT TER VOLTAGE (VCE J« -4V /

AMBIENT TEMRERAT RE ITA I--25'C
/
-a /
< 1
M "• /
/
3 -4 /
/
/
2
-j
/
I
y i
I2C3-2242IRI
Fig. 3— Typical dc beta characteristics for Fig. 4 — Typical input characteristic for Fig. S— Typical input characteristics for
40411. 40406 and 40410. 40407, 40408, and 40409.
274
51
POWER TRANSISTORS
40406, 40408, 40410, 40407, 40409, 40411
COLLECTOR-TO-EMITTER VOLTAGE IV CE l-4 V

ELECTRICAL CHARACTERISTICS, Tq = 25° Unless Otherwise Specified
* •:"
TEST i
LIMITS
CONDITIONS 08
07
CHARACTER- VOLT- CUR- 40406# 40409
Al
40411
:
40408
ISTIC AGE RENT 40407 40410* I 06 A-": //*
S os
Vdc Adc ~t
VC E c >B Min. Max. Min. Max. Min. Max. Min. Max. UNITS
S04
3 05
'.£
w'/ :.::
°2
L*:
a^
$
'CBO 10* - 0.25*
- - - - - - MA
!/>
™ 0.1
:.:,
l
E = ::': :::: I;;;
40 - BASE-TO-EMITTER VOLTAGE (V BE ) — V
'ceo 1
HA
80 _ 1
_ _ _ _
T C =150°C 40411.
40406 40 0.01
40407 40 - 0.1 mA
-500 AMBIEN T TEMPERATURE
40408 80 0.25 ITA ). 25 " C ^"
A 1
'CER -
-400
80 1 500 MA -a ,
Rbe = 100 n
-6
- -300
T C =150°C 80 0.1 2 mA
'ebo u -2O0 '
-
V BE = -4V - 100 - 100 - 100 - 500 MA
:
t
e ASE CURRENT U B
>'-2 " .
V CE0 (sus) 0.1 a 50 b - 90 b V o l0°

r= j
'
V CER (sus) 0.1 - - - — —

V ! !
R BE = 100 ft 0.2 90
COLLECTOR-TO-EMITTER VOLTAGE <VCE )-V
vB e 10 0.001 a 0.8 C
4 0.01 a - - 1 - - Fig. 7 — Typical output characteristics for
a
V 40406 and 40410.
4 0.1 1
4 4a 1.2
0.1 a 0.015 - - - 1.4 - 1.4

V CE (sat) _ V
4a 0.4 0.8
40406 10 0.1 mAa 30 200

40407 10 a 40 200
0.00
h FE 40408 4 0.01 a 40 200
40409-10 4 0.1 a 50 250
40411 4 4a 35 100
h fe
10 0.05 6» - - - - - - -
f = 20 MHz
4 0.05 100 (typ.) 100 (typ.) 100 (typ.) - - MHz
*T
4 4 800 (typ.) kHz Fig. 8— Typical output characteristics for
Cobo 40407, 40408, and 40409.

10" 15* pF
l
E =
f = 1 MHz ISO
:lti 111 iiis:;
's/b - - - - 5* - - - A
t = 1s nonrep
40 <
I
'2 3 :
#
- I0.0
FC+
R 0JC - 35 - 35 - - - 1.17
°C/W
R 0JA - 175 - 175 - 50 - - tp
b CAUTION: The sustaining voltage V

# For p-n-p devices, voltage and current values are CEO (sus) u 2.5
negative MUST NOT be measured on a curve tracer.

* V CB * 40407 only * 40410 only V CEO (sus) should be measured by the pulse EH +- lllilllll 44
method (Note 'a').
a Pulsed; pulse duration = 300 us, duty factor ^2% c mA
40406 tested at c = -0.1
l
Fig. 9— Typical output characteristics for
40411.
275
POWER TRANSISTORS
40631, 41504
Hometaxial-Base Silicon N-P-N VERSAWATT Transistors

Designed for Medium-Power
Linear and Switching Applications Features:
The RCA-40631 and 41504 are hometaxial- Both of these transistor types are supplied in
base silicon n-p-n transistors intended for a the VERSAWATT flame-retardant plastic
wide variety of medium-power applications. package. The 40631 supplied in the JEDEC
is
The hometaxial-base construction of these Applications:

TO-220AA formed-lead version of this pack-
devices them highly resistant to
renders age for use with TO-66 sockets; the 41504 Series and shunt regulators
second breakdown over a wide range of is supplied in the JEDEC TO-220AB, High-fidelity amplifiers
operating conditions. Type 40631 is intended straight-lead version. Power-switching circuits
especially for use in driver and output stages Solenoid drivers
in high-fidelity audio-amplifier circuits; the
41504 is a general-purpose device.

v CER (sus) 40631 41504
R BE = 100 n TERMINAL DESIGNATIONS
45 35
v EBO 5 4
'C 4 4
AO
'B 2 2
PT :
At Tc < 25°C 36 36 W (FLANGEK !l_Tl

At T c > 25°C Derate linearly 0.288 W/°C
AtTA <25°C 13 W 9ZCS-27320
TJ. Tstg -65 to +150 °C BOTTOM VIEW

TL JEDEC TO-220AA
At distances > 1/32 in. (0.8 mm) from seating plane
for 10 s max 235 ____ °C
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC)=25°C
TEST CONDITIONS LIMITS 9ZCS-275I9

VOLTAGE CURRENT BOTTOM VIEW
CHARAC- 40631 41504 UNITS
Vdc Adc
TERISTIC JEDEC TO-220AB
VC E vBe 'c •b Min. Max. Min. Max.
'CER 20 - - 5
R BE = 100J2 40
mA
0.5
-4 — - 1
'ebo -5 mA
1
no I COLLECT0H T0-EIUTTO1
Vcer(sus) 0.1a - 35
'"'
_4. VOLTAGE (V«)- 4 V
V
R B e = 10012 0.2a 45 1 «
4/
t / >
4 ia 25 — I „
'
hFE 4 2a 20 70 * ,0 A
\j&/
/ '^
1a 0.05 — — 1
1 60 ^
V CE (sat) V 5 so
*Y \,
2a 0.2 1
4 1a - - 1.5
3 40 y\ \
vBe
4 2a 1.5
V £
I " X
» 20 l(
Ihfel
4 0.2 2 - 2 - 10
\
f = 0.4 MHz g
V,
R 0JC - 3.5 - 3.5

°C/W COLLECTOR CURRENT - A
R 0JA - 70 - 70
llc> j^.
Fig. 1 — Typical dc beta characteristics

a Pulsed: Pulse duration »
300 ti&, duty factor < 2%. for 40631.
276
POWER TRANSISTORS
40631, 41504
COLLECTORTO-ERITTER YOLTACE (VcE) • 4V COLLECTOR tO-E»lttlR VOLTACE (VCE ) . 4 V

COLLECTOR TOEWTTER VOLTAGE |VcE> 4 1 1.1
•a
&
\
9
5 ao */ ;
-^ \
i
i i4
J
G
1. /
t
^^ S 1.2
*Y "
ao
/
/
> |
1
a
i \ v
2
i
o.i
I
\ 0.1
i I
\
s
0.4
6 '
' to 1.
! ' !
'
Vi *
s
001 *0.01 'l.O
COLLECTOR CURRENT (10 - mA COLLECTOR CURRB4T (Itf - "» Bn
COLLECTOR CURRENT (Id - A ,
Fig. 2— Typical dc beta characteristics Fig. 3— Typical gain-bandwidth product f/jr. 4 — Typical gain-bandwidth product
for 41 504. for 40631. for 4 1504.
T?f
4.0
1 Is.
H
T=i
ipj =5
V 3( fe g- 125" C
2s
P Sj
i
I: CASi TEH »ERi TU« ! (Tc) • 2 c;
O.J 1.0 IS 20 25 90
OS 1.0
USE-TOCMTTER VOLTAGE (V M ) - ' •ASETOEMTTER VOLTAGE (V M ) - V

x&m COLLECTOR TMMTTER VOLTACE (V«> - V
5— Typical transfer characteristics Fig. 6— Typical transfer characteristics Fig. 7 — Typical output characteristics
^/ff.
for 40631. for 41504. for 40631.
CASETEl PER UVR E(TC 2 *>c
40
<
i
"
35
P 25 -*3
s f";
W- ^_ -ii
1 si
8
5m B Z*
2.0
&&=; *¥ k £.' 1 35
i M
SmTH jS 2* ss ;:if KB
ffilASE CilRREMT ('l«l 10 mA J i-z- iS}
53
10 20
COLLECTOR- TO-EWTTER VOLTACE <V CC ) - V viirJ
Fig. 8— Typical otuput characteristics

for 41 504.
277
V
POWER TRANSISTORS
40850, 40851, 40852, 40854
450-V Silicon N-P-N Power Transistors Features:

High-voltage ratings for operation from power
For Off-Line Switching-Regulator Type Power-Supply Applications lines without a step-down transformer
Popular JEDEC TO-3 and TO-66 hermetic

The RCA-40850, 40851, 40852, and 40854 These devices have sufficient voltage capa- packages
are n-p-n types selected from RCA's line bility to be used as push-pull inverters or
of silicon power transistors for power-supply pulse-width-modulated inverters operating di-
applications. Their high-voltage ratings per- rectly off the 120-V power line; they can
Applications:
mit operation directly off the power line operate as switching regulators off a 240-
line; for 120-V lines, the prototypes can be For use in switching-regulator supplies which
thereby eliminating the heavy and bulky
used. feature:
60-Hz power transformer; their fast switch-
ing speeds permit operation above the audio- —A substantial reduction in size and weight
frequency range (20 to 30 KHz) for quiet due to elimination of the 60-Hz power
transformer.
performance and permit the use of small
ferrite-core transformers for changing volt-
—Operation with a substantial reduction of heat
age levels. 5-V, off-line supplies with current ratings of
25. 50. 100. or 200 A
30- V, off-line supplies with current ratings of
MAXIMUM RATINGS, Absolute-Maximum Values: 5. 10. 20, or 40 A
'CBO- 450 450 450 450 V

'ceo (sus) 300 350 350 300 V
'
CER Uus)
r be < 50 n 400 375 375 325 V
6 9 9 6 V
2 7 7 15 A
CM
(For 10 ms max.) 5 10 10 30 A
1 4 4 10 A
Tc< 25°C 35 45 100 175 W

T C >25°C. Derate linearly to200°C
TJ. Tstg -65 to +200 °C
1"l
(During soldering):
JEDEC TO-3
At distances ^ 1/32 in. (0.8 mm)
from case for 1 s max. . . . °C 40852
* Safe-operating-area curves for prototype devices should be extended to the maximum values of
40853
collector
current for these devices.
Type 40850 (For 5-V, 25-A & 30-V, 5-A Power Supplies)
Package: JEDEC TO-66
ELECTRICAL CHARACTERISTICS, At Case Temperature <Tc) = 25°C,
LIMITS
SYMBOL TEST CONDITIONS
MAX.
UNITS
MIN.
'CEV Vce=450V,V B E = -1-5V - 0.2 mA
= 450 V, = -1-5 V, Tc = 125°C - 2 mA JEDEC TO-66
ICEV VcE VbE
VcEO(sus)" IC = 0.2A, Ib = 300 - V 40850
40851
VCER(sus)* IC = 0.2A, Rbe=50£2 400 - V
vebo IE = 5mA, lc = 6 - V
hFE IC = 0.75A, VcE = 10V 25 -
VcE(sat) IC = 2A, Ib = 0.4A - 2.0 V
V B E(sat) IC = 2A, Ib = 0.4A - 2.0 V
a Vce = 100 V 0.35 - A
'S/b
ES/ba L = 100 /iH, lc(PEAK) = 2 A, Rbe = 20 £2 0.2 — mJ

VB E = 4 V
* For characteristics curves and test conditions, refer to published data for prototype 2N3585
278
POWER TRANSISTORS
40850, 40851, 40852, 40854
Type 40851 (For 5-V, 50-A & 30-V, 10-A Power Supplies)
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)°*25°C,
LIMITS
SYMBOL TEST CONDITIONS UNITS
MIN. MAX.
ICEV VCE =450V, VbE = -1-5 V - 0.5 mA
"CEV VCE = 450V, VbE = -1-5 V,Tc= 125°C - 5 mA
VcE0(sus)a IC = 0.2A, l
B = 350 - V
VCER(sus)a IC = 0.2A, Rbe = 50J2 375 -- V
VEBO IE = 1 mA, lc = 9 - V
hFE IC= 1.2 A, VqE = 1.0 V 12 -
VcE(sat) IC = 4A, B l = 0.8A - 3 V
VBE(sat) IC = 4A, Ib = 0.8A - 2 V
'S/b
a VCE = 50 V 0.9 - A
Es/ba L= 100/iH,lc(PEAK) = 3 A, RbE = 50J2 0.45 - mJ
V B E = -4 V
a For characteristics curves and test conditions, refer to published data for prototype 2N6079
Type 40852 (For 5-V, 50-A & 30-V, 10-A Power Supplies
Package: JEDEC TO-3
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25°C,
LIMITS
MIN. MAX.
'CEV VcE = 450V, VbE = -1-5 V - 0.5 mA
'CEV VcE = 450 V, VbE = -1 -5 V, Tc = 1 25°C - 5 mA
VcEO(sus)" IC = 0.2A, B = l 350 - V
VCER(sus)« IC = 0.2A, R B E = 50J2 375 - V
vebo IE = 1 mA, lc = 9 - V
hFE IC= 1.2 A, VcE = 1-0V 12 -
VcE(sat) IC = 4A, Ib = 0.8A - 3.0 V
VBE(sat) IC = 4A, Ib = 0.8A - 2.0 V
"S/b
a VqE = 40 V 2.5 - A
Es/ba L = 100 juH, lc(PEAK) = 3 A, Rbe = 50J2 0.45 — mJ
VB E = -4 V
279
POWER TRANSISTORS
40850, 40851, 40852, 40854
Type 40854 (For 5-V, 200-A & 30V, 40-A Power Supplies)
Package:JEDEC TO-3
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C,
LIMITS
MIN. MAX.
'CEV VcE = 450V, VbE = -1-5 V - 1.0 mA
ICEV VcE = 450 V, VbE = -1-5 V, Tq = 125°C - 10 mA
VcEO<sus)a IC = 02A, l
B = 300 - V
VcER(sus)a IC = 0.2A, Rbe=50S2 325 - V
VEBO IE = 5 mA, Iq = 6 - V
hFE IC= 10 A, VcE = 4 V 8 -
VcE(sat) IC= 16 A, Ib = 3.2A - 3 V
VBE(sat) IC = 16A, Ib = 3.2A - 3 V
•S/b
a VcE = 30 V 5.8 - A
ES/ba L = 50juH,lc(PEAK) = 10 A, RbE = 50J2 2.5 ~ mJ
VBE = -4 V
280
: r
POWER TRANSISTORS
40871, 40872
Features:
Epitaxial-Base, Silicon N-P-N and Low saturation voltage
P-N-P VERSAWATT Transistors

VERSAWATT package
Maximum safe-operating-area curves
General-Purpose Types for Medium-Power Switching and Amplifier Service in
Consumer, Automotive, and Industrial Applications TERMINAL DESIGNATIONS
RCA-40871 is an epitaxial-base silicon n-p-n regulators and inverters and driver and out-
transistor. RCA-40872 is an epitaxial-base put stages of high-fidelity amplifiers. These
p-n-p transistor. These devices are intended plastic power transistors are supplied in the
for a wide variety of medium-power switching JEDEC TO-220AB VERSAWATT package.
and amplifier aoplications, such as switching
BOTTOM VIEW
JEDEC TO-220AB
N-P-N 40871
P-N-P 40872*
With external base-to-emitter resistance (Rbe) = 100 O Vcer(sus) 120
With base open VcEO( sus > 100
EMITTER-TO-BASE VOLTAGE VebO
.I.40W
COLLECTOR CURRENT (Continuous)
1
I
c
*
BASE CURRENT (Continuous) I
B
1 V-
TRANSISTOR DISSIPATION: Pt
At case temperaturesup to 25°C
At case temperatures above 25°C Derate linearly at 0.32W/°C
1.8
4- —V-A-\\U\
At ambient temperatures above 25°C Derate linearly at 0.0144 W/°C
TEMPERATURE RANGE: tZl_!kss <*
Storage & Operating (Junction^ -65
u
to 150
LEAD TEMPERATURE (During Soldering):
\\ -\\X
At distance^ 1/8 in. (3.17 mm) from case
For p-n-p device, voltage and current values are negative.

for 10 s max 235
Aa
w\\
9ZCS-II
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 2S°C, Unless Otherwise Specified

Fig. 1 - Thermal-cycling ratings for
both types.
CHARACTERISTIC SYMBOL VOLTAOE CURRENT 40871 UNITS
V dc A dc 40872* I
c
1
MAX (CONTINUOI
IN
VCE VEB MIN. MAX. N^j
ic >B < 2 ^
110 - 1
mA
1_
1
^
emitter resistance 'CER | •
"- +-
(R BE ) = 100 n i !
Emitter-Cutoff Current >EBO 5 - 1 mA

Sustaining Voltage VcEO'sus* 0.1 100 - V "*- v CE MAX 1 30 V
1
With base open

1
0.01
i
With external base-
10 35 SO 100 1000
to-emitter resistance VcER<««> 0.1 120 - V
I
COLLECTOR-TO-EMITTER VOLTAGE (Vcej-V

. (RfjE> = 100n
4 1» 50 250
Fig. 2 • Maximum operating areas for
DC Forward-Current
40871.
"FE 4
Transfer Ratio
4 -10 • —- "pttt Mill ' '
• I C MAXKONTINUOOS)— CASE TEMPERATURE

4 1« - 1.5
(T c >'25-C
Base-to-Emitter Voltage V BE 4 V N><

f* -
4 I
*
Nap
i *>
Col lector-to- Emi tter

1« 0.1 _ 1.0 i
'
"^ [
V CE (sat) V i
\
Saturation Voltage
i
1 vl
- r --+-
Gain-Bandwidth Product fT 4 o.s 4 MHz -of
S
Thermal Resistance : '
3 i
i
~2L
R 0JC r
Junction-to-Case - 3.125
i
i
Junction-to-Ambient R 0JA 70
°C/W -0.01
i i
1
8 6 8
* For p-n-p devices, voltage and current values are negative. COLLECTOR -TO-EMITTER VOLTAGE (VCE )-V
* Pulsed: Pulse duration = 300 lis, duty factor = 0.018.

CAUTION: The MUST NOT
Fig. 3 Maximum
- operating areas for
sustaining voltages VcEOlS"*' a" d VcER(sus) be measured on a curve tracer.
40872.
281
POWER TRANSISTORS
40871, 40872
COU.ECTOR-T0-EMITTER VOLTAflEIVfcf)' 4V || | | | | [ | \f
I
6
:::Si £ I00-
i^-^Tl 25 -C
~~~"*
X 4
sza'k
° 5 + ifoff*'/ 1 1 1 1 1 1 1 n 1 1 1 1 1 1 1
u 2
\\\\\\\\\\\\m^ l *
BASE -TO -EMITTER VOLTAGE (V BE I — \

COLLECTOR CURRENT (I c l-
Fig. 4 - Typical output characteristics Fig. 5- Typical transfer characteristics Fig. 6- Typical dc beta characteristics
for 40871. for 40871. for 40871.
M|
SE TEMPERATE ,T C ,. 25'C ! ! I I ! ! ! |i j i] I ! I
COLLECTOR TO EMI TER VOLTAGE vrF l 4V-
) |
j
J
[
COLLECTOR-TD-EMITTER VOLTAGE (V^l "-4 V | | | f~-
CASE TEMPE RAruRE
| | | | |
O,.,
<
1
"
"Wf It- "
1 ;
iT c ^s"w
a--'
| [ | | | | | | I 1 1 1 ft
TE
>7
-' i *
g
«E -
| I/]'
* | | | | | 1 1 1 [ 1
|
4
-1 ITr"
s i
-2 -4 -t -e -10 -12 « •
COLLECTOR-TO-EMITTER VOLTAGE (VCE>— V

COLLECTOR CURRENT (I c l — A
Fig. 7 - Typical output characteristics Fig. 8- Typical transfer characteristics Fig. 9 Typical dc beta characteristics
for 40872. for 40872. for 40872.
282
POWER TRANSISTORS
BD142
Hometaxial-Base, High-Power Silicon N-P-N Transistor
Rugged General-Purpose Device For Commercial Use
Features:
The RCA-BD142 is a hometaxial-base diffused-junction silicon • Maximum-safe-area-of-operation curves

Applications:
n-p-n transistor intended for a wide variety of intermediate- Low saturation voltage
power and high-power applications. It is especially suited for High dissipation rating
use in audio and inverter circuits at 12 volts. Thermal-cycling rating curve
The BD142 is supplied in a JEDEC TO-3 hermetic steel
Solenoid drivers
package.
1 2- V audio and inverter circuits TERMINAL DESIGNATIONS
COLLECTORTO-BASE VOLTAGE V CB0

COLLECTORTO EMITTER SUSTAINING VOLTAGE:
With base open Vqj:q(sus)
With base reverse bias V BE = -1 .5 V V CEV (sus)
EMITTER TO-BASE VOLTAGE V EB0
CONTINUOUS COLLECTOR CURRENT I
c
CONTINUOUS BASE CURRENT Ig
At case temperatures above 25°C Derate linearly to 200 C
TEMPERATURE RANGE:
Storage and Operating (Junction)
PIN TEMPERATURE (During Soldering):
At distances S 1/32 in. (0.8 mm) from seating plane for 10 s max
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 2S°C Unless Otherwise Specified. 100
III
-T. UWXJ>2O0 a C
TEST CONDITIONS J.
\5vl
N>«
CHARACTERISTIC SYMBOL VOLTAGE CURRENT LIMITS UNITS
8 * v»
Vdc Adc i
5 N>.
VCE V EB V BE 'c 'B MIN. MAX.
>s'
s' J >.
With base-emitter junction 40 -1.5 " 2

'CEV mA ^>.
reverse -biased V* v&
Vo V"
10 ^L
'ebo 7 - 1 mA • 2 •

Col lector -to-Emitter 92CS- 20«73
Sustaining Voltage:
With base open V CE0 (susl 02 45 V Fig. 1 — Thermal-cycling rating chart.

With base-emitter junction -1.5 50 "
V CEV (sus) 1
reverse -biased
DC Forward Current
Transfer Ratio h
FE 4 4a 12.5 160
Base-to-Emitter Voltage V BE 4 4a - 1.5 V

Saturation Voltage V CE lsa,l 4a 0.4 " 1.1 V
Common-Emitter, Small- CCLLECTOR-TO-EWTTE* VOLT** (VeE )-4V

Signal. Short-Circuit,
Forward Current Transfer h 4 1 10 -

te
Ratio
If 1 kHzl !
Emitter. Small.Signal. §
LO
Short-Circuit. Forward
l
h lel 4 1 2 - i
If -0A MHzl
Gain-Bandwidth Product 1 800 - kHz
*T
Forward-Bias Second-Breat:
's/b 39 3 - A
down Collector Current (t > 1 s)
.
Thermal Resistance R 9JC " 1.5 °C/W COLLECTOR CURRENT <X c >-«
(Junction to Case)
Fig. 2— Typical gain-bandwidth product.

3 Pulsed: Pulse duration = 300 MS. duty factor - 2%.
283
V V V
POWER TRANSISTORS
BD142
IcikK temperature iTcl'iSHs^H^Hi
c
|
100
— •
4
i
o t i Ic MM. .«""•" bnormalueo i

§ rower 1
o 10
nÊ?™
W* FOR $IN«LE H gHSI
SJJflJJiSfi? mminrm^fl^lll^fiBli
BASE-TO-EMITTER VOLTAOECV-r) —
COLLECTOR -TO -EMITTER VOLTACE IV CC I— Fig. 4 — Typical transfer characteristics.
Fig. 3 — Maximum safe area of operation.
CASE TEMPERATURE (TC )'2»'C I

COLLECTOR-TO-EMITTER VOLTAGE (Vce>-4V
1> '
rf
t>-
4— J-^
9 «o
s $2*
.«•-
B s J&>
!::::::::::::::::::::::::::::
I
-<&
<tf\ ^
!::::!;m;;*^:::::::::::::::::::::::::::: s:
*
i
•••••••••!
••••••'F^T. •••••••••••• 3J
\ \.
v s
\
i
8 o
r-^ "1
A3E-T0-EMITTER V0LT«SE(Vg^—
COLLECTOR CURRENT (I c l-A
92CS-*2307fll «ec$-tZ906M MCSHZSOMI
Fig. 5 — Typical input characteristics. Fig. 6— Typical output characteristics. Fig. 7 — Typical dc beta characteristics.
284
POWER TRANSISTORS
BD181, BD182, BD183

Features:
Hometaxial-Base, High Power Silicon Maximum safe-area-of-operation curvet
N-P-N Transistors Low saturation voltages

Rugged, Broadly Applicable Devices For Commercial Use Thermal-cyding rating curves
RCA-BD181, BD182 and BD183 are silicon n-p-n transistors

intended for a wide variety of high-power applications. The Applications:
hometaxial-base construction of these devices renders them
• Series and shunt regulators
highly resistant to second breakdown over a wide range of
operating conditions.
These transistors are supplied in a JEOEC TO-3 hermetic Solenoid drivers
steel package.
BD181 BD182 BD183


With external base-to-emitter resistance (Rgg) » 100 fi V CER (sus| 55 70 85 V
With base open V CE0 |sus) 45 60 80 V
EMITTER-TO-BASE VOLTAGE V EB0 7 7 7 V
CONTINUOUS COLLECTOR CURRENT 15 15 15 A
I
c
CONTINUOUS BASE CURRENT I 7 7 7 A
fl
At case temperatures up to 25° C 117 117 117 W
At case temperatures above 25 C - See Fig. 2 •»
TEMPERATURE RANGE:
Storage and Operating (Junction) *•— --65 to +200 g^ °C
At distances > 1/32 in. (0.8 mm) from seating plane for 10 s max — 235 o
ELECTRICAL CHARACTERISTICS, At Case Temperatu re(Tc i = 25 C Unless Otherwise Specified

CUR-
CHARACTERISTIC SYMBOL VOLTAGE RENT UNITS
Vdc Adc BD181 BD182 BD183
V CB V C E V EB VflE 'c <B MIN. MAX. MIN. MAX. MIN. MAX.
Collector-Cutoff Current: 45 2
With emitter open and 60 - - 5 -
'CBO
Tc = 200°C 80 5
With base-emitter junction 45 -1.5 1 ~ mA
reverse-biased 60 -1.5 - - 1
'CEX
80 -1.5 1
Emitter-Cutoff Current 7 - 5 - 5 - 5 mA
'ebo
Collector-to-Emitter Sustaining Voltage:
With base open V CEO (sus) 0.23 45 _ 60 _ 80 _
55 - 70 - 85 - V
(R
BE )=100« V CER (sus) 0.23
4 4a 20 70
DC Forward Current Transfer Ratio h
FE
4 3" 20 70 20 70
4 3" - 1.5 - - 1.5
Base-to-Emitter Voltage V BE V
4 4a 1.5
Collector-to-Emitter Saturation 4a 0.4 a - - 1 -

Voltage
V CE (sat) 3" 0.3" 1 1 V
Magnitude of Common-Emitter, Small-
Signal, Short-Circuit, Forward Current
Transfer Ratio (f = 0.4 MHz) M 4 1 2 - 2 - 2 -
Gain-Bandwidth Product f
T 1 800 - 800 - 800 - kHz
Common-Emitter, Short-Circuit, Small-
Signal, Forward Current Transfer 4 - - -
f
hfe 0.3 15 15 15 kHz
Ratio Cutoff Frequency
Forward-Bias Second Breakdown Collector

30 3.95 - 3.95 - - A
Current (t > 1 s) 's/b 3.95
Thermal Resistance (Junction-to-Case) R 0JC - 1.5 - 1.5 - 1.5 °C/W

a
Pulsed: Pulse duration = 300 us, duty factor = 1 .8%.
285
POWER TRANSISTORS
BD181, BD182, BD183

loo .
—
Tj MAX • OO-C
C>sC _
»
_s
J. • i
sv I
'
1
i 1
\
J&.
^
r^ ,f X
Fig. 2 — Thermal cycling rating chart for

all types.
100
COU.ECTOR-TO- EMITTER V0LTA6E «Vcp» — Fig. 3— Typical transfer characteristics
M«»- for all types.
COLLECTOR-TO-EMITTER VOLTAGE {V CE ]-4V

- SO I
i
4V>
/ UN
g
<z 60
/
,
aS&
^
I
<& vs
t 40
& s\
X
s
|
s. ^
N \
*
\
i
8 o - _
BASE-TO-EMITTER VOLTAGE (Vg^—V
Fig. 4 — Typical input characteristics Fig. 5 — Typical output characteristics Fig. 6— Typical dc-beta characteristics
forBD182. for BD182. forBD182.
COLLECTOR-TO-EMITTER V0LTA8E (VCEl ,4 vBIIIIIIIIIIIIIII^M CASE TEMPERATURE (TC )-2»«C ||||||||||||| COLLECTOR- TOtEMITTER VOLTAGE <VC£> '4 V
""""'HI MllttttF'^lllllllllllllllllllllllllllllllUj
iHHiiHu^/niu^JiiinmiiniHii'iiiiiii
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i mft ^Pî'Effll ffl iiimiiiiiiiTooimmmiiiHiiiiiiiii
/ UUUUUlmoo
HnTm rtt T""™ -»^
—
ililiU II 1 1 LiTi I 111 ill III IIH I ;
4 1 soo
li 1 1 1 1 1 1 44-H44-U4-1 1 1 1 1 1 1 1 1 1 1 1
" 40
--• *f
S
1 1 1 1 1 1
0.6HBfFf
- S IUMMU340o|
E
1
S sf OC
7 \& k'-" - ^
i lililillilllil'lhillilili oc E ' *&»*
"
o.«[tffm
0.2H
i l :BASE CURRENT (Igl 100 nA^M o
K
20
& £j»**
o 2[
\
8
8 B •
10 20 JO 40 90 SO
BASE-TO-EMITTER VOLTAGE (Vbe) — COLLECTOR CURRENT <!<;>— A
92CS- 19440
Fig. 7 — Typical input characteristics for Fig. 8 — Typical output characteristics for Fig. 9 — Typical dc-beta characteristics for
BD181 and BD 183. BD181 and BD183. BD181 and BD183.
286
POWER TRANSISTORS
BD181, BD182, BD183

CASE TEMPERATURE (Tc)-2S»C
IOO
>
JUL90 VCER
BO I83
i • VCEO
f -80
?I VCER
80/8^
VCEO
§§60 VCER
80 '8/
»?50
VCEO
iS«°
30 |
6 e 6 6«
I 10 IOO IK IOK I00K -5 -4 -3 -2
COLLECTOR CURRENT (!<;>-*
EXTERNAL BASE-TO-EMITTER RESISTANCE (Rbe> O BASE-TO-EMITTER VOLTAGE (V B E>
»2CS-2ZTM
Fig. 10 — Typical gain-bandwidth product Fig. 11 — Sustaining voltage vs. base-to-emitter Fig. 12 — Minimum reverse-bias second-breakdown
for all types. resistance for all types. characteristics for all types.
287
POWER TRANSISTORS
BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C

Epitaxial-Base Silicon N-P-N and P-N-P
30 W at 25°C case temperature
For Power-Amplifier and High-Speed-Switching Applications
4-A rated collector current
These RCA devices are epitaxial-base silicon n-p-n and All these transistors are supplied in the JEDEC TO-220AB Min. f
T of 3 MHz at 10 V, 200 mA
p-n-p transistors; they differ only in their voltage ratings. straight-lead version of the VERSAWATT package. Optional
These transistors are intended for a wide variety of switching lead configurations are available upon request. For infor-
and amplifier applications such as series and shunt regulators, mation, contact your nearest RCA International Sales
and driver and output stages of high-fidelity amplifiers. The Office.
BD240-series p-n-p power transistors are complements of

the n-p-n devices in the BD239 series.

B0239A BD239B BD239C
BD240A* BD240B' BD240C* »2CS-27SI9
BOTTOM VIEW
resistance (RgE' = 10 ° s! V CER 115 JEDEC TO-220 AB
With base open 100
^CEO
CONTINUOUS COLLECTOR CURRENT l
c
CONTINUOUS BASE CURRENT I
B _,,.«! .)= SOW 1
\ ^ 1
* 1
At case temperatures up to 25°C .... 30 30 30 30

1
\
. 2 2 2 2
At case temperatures above 25°C .... Dera e linearly to 150°C /
TEMPERATURE RANGE: 5 io
LEAD TEMPERATURE
At distance 1/8 in. (3.17
(During Soldering):
mm) from
^1
case for 10 s max
For p-n-p devices, vottage and current values are negative. * / V \|\Y§k
l\° r V 'mv
THERMAL CYCLES
ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 2S°C Fig. 1 — Thermal-cycling ratings for all types.
TEST CONDITIONS LIMITS COLLECTOR-TO-EMITTER VOLTAGE IVCEl' «V

£400
VOLTAGE CURRENT BD239 BD239A BD239B BD239C
CHARACTERISTIC SYMBOL BD240* BD240A* BD240B* BD240C*
UNITS
Vdc Adc CASE TEMPERATURE (Tr)'IZ5*C
S 200
V CE V BE 'c B l MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
& ,25JC
Collector Cutoff Current: -30 - -0.3 - -0.3 " - 100
'ceo S
With base open -60 -0.3 - 0.3 « eo
mA -40*C
With base-to-emitter -45 -0.2 S «°
junction short-circuited - 60 : " - 0.2 " - 40

'CES -80 -0.2 i
-100
20
|
Emitter Cutoff Current 'ebo s -1 -1 -1 -1 mA
Collector-to-Emitter l0
Breakdown Voltage: V BR(CEOI 0.033 -45 " -60 " -80 - -100 - V S .
With base open f
DC Forward-Current -4 -0.2 a 40 " 40 " 40 - 40 -

h
FE -4
COLLECTOR CURRENT U c >— A »2CS-»»?
Transfer Ratio ~1 a 15 15 15 15
Base-to-Emitter Voltage V BE -4 -l a - -1.3 - -1.3

'
- -1.3 - -1.3 V Fig. 2 — Typical dc beta characteristics for

Collector-to-Emitter - - BD239-series types.
v CE (»tl -1 a -0.2 - -0.7 - -0.7 -0.7 -0.7 V
Saturation Voitage
COLLECTOR-TO-EMITTER VOLTAGE IVCE' 1 "
4V
Common-Emitter jfUoo
Small-Signal Short- "
h - 10 0.2 20 " 20 - 20 20 "
Forward- fe
Circuit CASE TEMPERATURE n>>.l2S-C
S 200
(f = 1 kHz) 25 'C
Magnitude of Common | 100

«• »0
-40"C
Emitter Small-Signal
Short-Circuit Forward-
M -10 0.2 3 - 3 " 3 - 3 " t-
1
60
«
(f = 1 MHz)
Thermal Resistance: | 20
Junction-to-Case R 0JC _ 4.17 _ 4.17 _ 4.17 _ 4.17
°C/W
Junction-to-Ambient R 0JA - 62 5 - 62.5 " 62.6 - 62.5 u '0
o e
6
"Pulsed: Pulse du = 300 ms, duty factor » 2%.

COLLECTOR CURRENT (I c l— A Mcs-i
Fig. 3 — Typical dc beta characteristics for
BD240-series types.
288
POWER TRANSISTORS
BD239, BD239A, BD239B, BD239C, BD240, BD240A, BD240B, BD240C
y'i^f*ifftTtir'lllt HHIIIIIIIIIIIIl'IIIIIW
l
fp [CASC TCMKMTIMC IT C 1-2S"I

tIq imuc. icomMuwsP
H::
: " =
Htm K&h
MMV
»3
t 3
w* §811
T ', II US *«H
» p«
":;
S ,
'
-': :
- h. TjH:
i i St
j
8 |5jy
»C£o"* ,< -45V 1»2«>I 1

h\ _ Vet,, HUt—«OV (80J4OAI 3
in; î!T Us
~ f
"CEO MA1U-IOOV IB0240I | ! im; ;ii== 1 ;i
E
''[ ...
:ii 1 S:
V ;:;: h!-1 M, fi.i
g
~Z *
-0-OI
Trff
-P :Ji
P *
•
mi
00
:
* *KXX
COLLCCTOR-TO-EMITTER VOLTAGE (Vfegl—

M CS-M4*
Fig. 4 — Maximum safe operating areas for Fig. 5 — Maximum safe operating areas for
BD239*eries types. BD240-series types.
289
POWER TRANSISTORS

For Power-Amplifier and High-Speed-Switching Applications 40 W at 25°C case temperature
These RCA devices are epitaxial-base silicon n-p-n and 5-A rated collector current
All these transistors are supplied in the JEDEC TO-220AB
p-n-p transistors; they differ only in their voltage ratings. straight-lead version of the VERSAWATT package. Optional Min. f T of 3 MHz at 10 V, 500 mA
These transistors are intended for a wide variety of switching lead configurations are available upon request. For infor-
BD242 -series p-n-p power transistors are complements of
Z.c
.ANGE)*
B0241 BD241A BD241B BD241C

B0242* 92CS-275I9
BD242A* B0242B* BD242C*
COLLECTOR-TO-EMITTER VOLTAGE: BOTTOM VIEW
resistance (Rgf:) » 100 V CER
JEDEC TO-220 AB
fi 55 70 90 115 V
With base open v CEO 45 60 80 V
100
EMITTER-TO-BASE VOLTAGE. . V EB0 5 5 5 5 V P T IMA> .I-40W |
1
CONTINUOUS COLLECTOR CURRENT l

c 5 5 5 5 A * •°.a
CONTINUOUS BASE CURRENT Ig 1 1 1 1 A I ^
J/
At case temperatures up to 25°C ....
At case temperatures above 25°C ....
.
40
2
40
2
Derate li nearly t
40
2
150°C
40
2
W
W 5
%
io
•
\
V^
k
Vv
TEMPERATURE RANGE: 5 • v\ \\NS f
« 55 to 150 •» °C E3 L__
V
At distance 1/8 in. (3.17 mm) from \\N
case for 10 s max < 235- a* °C £ 2 / \ bS
\.\
For pnp devices, voltage and currant valuaa ara negative. 1
k V V vY
Fig. i — Thermal-cycling ratings for all types.

ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) • 25°C
COLLECTOR-TO-EMITTER VOLTAGE (VCE) 1 4V
K400
TEST CONDITIONS * 2
LIMITS CASE TEMPERATURE (T I>I25*C
C
8 200
CHARACTERISTIC SYMBOL VOLTAGE CURRENT BD241 BD241A BD241B BD241C
Vdc Adc BD242* BD242A* BD242B* BD242C* UNITS ft
,25*C
5 100
V CE V BE 'c 
With base-to-emitter 45
mA 5
0.2
junction short-circuited
'CES
60
80
too
-
- 0.2 -
0.2
-
0.2
§ 20
^ s\
10
'ebo -5 - 1 - 1
- 1 - 1 mA e
e
Breakdown Voltage: V BRICEOI 0.03" 45 - 60 " 80 - 100 " V
With base open COLLECTOR CURRENT 1I C I—
92CS-20I48
DC Forward-Current 4 1» 26 " 25 - 25 - 25 -
Transfer Ratio
h
FE 4 3» 10 10 10 10 Fig. 2— Typical dc beta characteristics for
Base-to-Emitter Voltage V BE 4 3" - 1.8 - 1.8 - 1.8 - 1.8 V BD241 -series types.
Saturation Voltage
v ce i«i 3" 0.6 - 1.2 - 1.2 - 1.2 - 1.2 V COLLECTOR-TO-EMITTER VOLTAGE <VCE>'-4V
Jf400
Common-Emitter
s
Small-Signal Short- CASE TEMPERATURE ITC I.|28'C
"fe 10 0.5 20 - 20 - 20 " 20 " a zoo
Circuit Forward-
6
,25»C
-•
(f - 1 kHz) 100
S
£ eo >, N
Magnitude of Common -40 *C
N>
,N
N\ S
•s
M 10 0.5 3 - 3 - 3 - 3 "
>
If - 1 MHzl
Thermal Resistance:
J
20
^v \
Junction-to-Case R 0JC - 3.125 _ 3.125 _ 3.125 _ 3.125
Junction-to- Ambient r 0ja - "C/W
62.5 ~ 62.5 " 62.5 - 62.5 6
"Pulsed: Pulse duration « 300 jis. duty factor • 2%. vices, voltage and c t values ara negative.
COLLECTOR CURRENT (l c >— A
tfCS-20H6l
Fig. 3— Typical dc beta characteristics tor

BD242-series types.
290
:
POWER TRANSISTORS
*
HCASE TEWOUTWfffl
l£ MAX (O0MTH8J0US>||
jji I
c MAX. ICONTtM ouslj
™
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j ~k 5
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f
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:fl iSpJL
G : VC EO MAX.-4SV 18024
- vceo MAX. • 45 V (B024D
MAX. • 80V (B024IA) p If ' .: if
i j V CE0 MAX-80V{8024 f ty
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ffl
1 001 -;::!-.
-M P El * :ltl if tii
'&
-iL lilrffl
-001 =r = : :E ^: -.-
:
^ffi ~r -'^Ja
COLLECTOA-TO-EMITTER VOLTAGE (Vfcel-V ^j.^s, COLLECTOK-TO-EMITTeil VOLTAOE (Voe)-V ttatt
F/p. 4 — Maximum safe operating areas tor Fig. 5 - Maximum safe operating areas for
B D 24 1 -series types. BD242-series types.
291
AA
POWER TRANSISTORS
BD243, BD243A, BD243B BD243C, BD244, BD244A BD244B, BD244C

66 W at 26°C case temperature
For Power-Amplifier and High-Speed-Switching Applications 7-A rated collector current
Min. f
T of 3 MHz at 10 V. 500 mA
These RCA devices are epitaxial-base silicon n-p-n and All these transistors are supplied in the JEDEC TO-220AB
p-n-p transistors; they differ only in their voltage ratings. straight-lead version of the VERSAWATT package. Optional
These transistors are intended for a wide variety of switching lead configurations are available upon request. For infor- TERMINAL DESIGNATIONS
B0244 -series p-n-p power transistors are complements of

B0243 B0243A BD243B BD243C 92CS-275I9
8D244* BD244A* BD244B* BD244C*
COLLECTOR TO EMITTER VOLTAGE:
With external base to-emitter
BOTTOM VIEW
resistance (Rd,e> = 100 SI V CER JEDEC TO-220 AB
115
With base open v CEO 100
EMITTER TO BASE VOLTAGE
V EB0
l
c
5J = 65* X "
CONTINUOUS BASE CURRENT "I
B
l/^
l
*
TRANSISTOR DISSIPATION: PT i\
At case temperatures up to 25°C ....
At case temperatures above 25°C ....
.
Derate linearly to 150 C 5 10

-J
h. . vS*
TEMPERATURE RANGE:
Storage & Operating (Junction) 65 to 150 °C
5 6
\\
\%\
At distance 1/8 in. (3.17 mm) from
I
case for 10 s max. \\ iv&'
3]\ \v.
For p-n.p davicea, voltage and currant value* ara nagativa. xf K» \ & \
Fig. 1 — Thermal-cycling ratings for all types.
COLLECTOR-TO-EMITTER VOLTAGE (V CE ) « 4 V
jfUoo
s
CASE TEMPERATURE (Tri-IZS'C
ELECTRICAL CHARACTERISTICS «r Caw Temperature <TC)-2S°C 3 200
25'C
< 100
TEST CONDITIONS* J B0
LIMITS -40'C
>- 60
VOLTAGE CURRENT BD243 BD243A BD243B BD243C
CHARACTERISTIC SYMBOL BD244* BD244A* UNITS * 40
Vdc Adc BD244B* BD244C*
V CE V BE 'c b MM. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
| 20
Collector Cutoff Current: 30 " 0.7 - 0.7 - "
With bate open 'CEO 60 0.7 0.7
With base-to-emitter
mA o 10
46 0.4 a b
junction short-circuited 60 0.4 -
'CES SO - 0.4 -
100 0.4
'ebo -5 - 1 - 1 - 1 - 1 mA
Collector-to-Emitter Fig. 2 — Typical dc beta characteristics for
Breakdown Voltage: V BR(CEO). 0.038 45 " 60 " 80 - 100 - V
. With bate open BD243-series types.
DC Forward-Current 4 0.3» 30 " 30 " 30 30 -
h COLLECTOR-TO-EMITTER VOLTAGE (VCEI--4V
Transfer Ratio FE 4 3« 15 15 15 : 15 j£4O0
Base-to-E miner Voltage V BE 4 6» - 2 - 2 - 2 - 2 V 2
CASE TEMPERATURE (Trl-l2S*C
3 200
v CE i„t> 6* 1 - 1.5 1.5 - 1.5 - 15 V
Saturation Voltage
Common-Emitter J 100
« 80
Small-Signal Short- -40 "C
10 20 " 20 " 20 " K 60
Circuit Forward- "f. 0.5 - 20
(f • 1 kHz)
Magnitude of Common f 20
N 10 OS 3 - 3 - 3 " 3 " s
o
S
10
8
If • 1 MHzl 6
Thermal Resistance:
Junction-to-Case R ejc _ _ _ _ COLLECTOR CURRENT II C I—
1.92 1.92 1.92 1.92
°C/W
Junction-to-Ambient " 62.5 " 62.5 " 62.5 " 62.5
"fljA
'Pulsed: Pulie duration • 300 «!. duty factor 2%. • For p-n-p davicaa. voltaga and currant valuas ara r BD244-series types.
292
— p
POWER TRANSISTORS
£? -3E Tp]if
10
t 1 I
tm
c MAX. (CONTINUOUS^
|;|.'-f
i\"*
TEMPCIIATUItE - -10
t j % MAX. ICONTIMJOUSIk 3 CASE TEMfttATUftC W
r te
»
' 1!
r' I
1
!
;!!:
:
—
-
On
DissiMTioN-uytTe
HO
lit
M llr
F
;;:i|;l
DISSIMTION- JMtTEol ^MJIjl'
11 U 111
w
•1! !
1
'
m!'1B r '
i. ! K. !H '
1 %
i
TttT -
1L. ic ?ffln !!$ -j :"
•fr
HI Sir
n JjUi
LMUTC 0—
pc!
S " "TTTT jj; S * £ |,'
I lh
:
: :
1
-jilil'l H! ;i
—
i :
§
1] pi .... .
§
bl x
t <
t" i
1
g :;
= a: l:i:
1
t ,
l-o,
, 1? : =
VCC0 H*«..4SV(B0244. £
IAX -60VIB0244AlL
V CE0 MAX • 8OVIB02438 m !
VcEO***"* »0V (•02446,1-
... — *"•
II v r
::: ::::
t:
01
i
T -1 ;::' ::
:
=
r .r .:'.
-O.Ql II
-
:
*7 If i: J
1
II
COLLECTOR-TO-EMITTER VOLTAGE (VctJ-V

COLLECTOH-TO-EMITTER VOLTAGE (Vê)- MC9 . M «
Fig. 4 — Maximum safe operating areas for Fig. 5 — Maximum safe operating areas for
BD243-series types. BD244-series types.
293
1 V "
POWER TRANSISTORS
BD277
Features:
7-A, 70-W, Epitaxial-Base, Silicon P-N-P Thermal-cycling ratings
VERSAWATT Transistor Maximum -safe-area-of-operation

Low saturation voltage
VERSAWATT package (molded
curve
For Applications in Series and Shunt Regulators silicone plastic)

High power-dissipation capability
Type BD277 is an epitaxial-base silicon p-n-p transistor The BD277 is useful in series regulators and shunt regu-
supplied in the JEDEC TO-220AB straight-lead VERSAWATT lators because of its low saturation voltage and high power-
package. It is also available in the TO-220AA package (leads dissipation capability. It is also useful as a replacement for
formed to fit a TO-66 socket); to order
this version, specify germanium p-n-p transistors in many applications.
formed lead No. 6201.
COLLECTOR-TO-BASE VOLTAGE:
With emitter open -45
VCBO
With base open -45
VcEO
EMITTER-TO-BASE VOLTAGE:
With collector open
BOTTOM VIEW «cs-27 S i9
Vebo
COLLECTOR CURRENT (Continuous) I
c TO-220AB
B A
TRANSISTOR DISSIPATION: Py -u- ""'
1
At case temperatures up to 25°C 70 W

Derate linearly at 0.56 W/°C
o|
TEMPERATURE RANGE: (FLANGEK -" 1
Storage & Operating (Junction) -65 150

to °C
LEAD TEMPERATURE (During Soldering): BOTTOM VIEW »2CS- 27520
At distance > 1/8 in. (3.17 mm) from case for 10 s max. 235
. . .
°C
TO-220AA
ELECTRICAL CHARACTERISTICS, At Case Temperature <Tc> - 25°C unless specified otherwise
TEST CONDITIONS
VOLTAGE CURRENT LIMITS
V dc A dc
VCE Vcb V EB ic B •e MIN. MAX.
Collector Cutoff Current: 100, i
—
With emitter open -45
ICBO -0.1
With emitter open and Tq = 150°C -40 - -2.0 mA * 4
oA
tf\\
With base open
Emitter Cutoff Current:
'CEO -30 _ -1.0
I M ^ &
With collector open
Collector-to-Emitter Breakdown Voltage:
lEBO
v (BR)CEO
-4
-0.1* -45
-1.0
-
mA ijj
5
10-
•
1 ^\ Av.&-I
*
S&
v\\"
S
v
With base open V XI
1 *
si VAv^fe
DC Forward-Current
Transfer Ratio
Saturation Voltage
VBE
"FE
VcE(sat)
-2
-2
-1.75*
-1.75*
-1.75*
30
_ 1.2
150
V
1
|JL
IP Y>
\
^
A\\
**%
-0.1 -0.5 V
Gain-Bandwidth Product -4 _
'T -0.5 10 MHz NUMBER OF THERMAL CYCLES
Thermal Resistance:
Fig. 1 - Thermal-cycling ratings.
Junction- to-Case
R0JC 1.78
Junction-to-Ambient - °c/w
RflJA 70
Pulsed: Pulse duration - 300 us, duty factor < 2%.
COLLECTOR-TO-EMITTER VOLTAGE 1V CE »- -4 V
COLLECTOR-TO-EMITTER VOLTAGE (VCE )--4 V I"
i I
jf400
-e
e I I III I
CASE TEMPERATURE <Tr )-l25"C

T S 200
-
+i' i I 1 1 1 1 1 1 1 1 1 1 1
25 "C
ii M Ul
1 1 1 1 1 1 1 1 1 1
5 ioo
£-4 « ao
^/ffi/tT-l | | I
| | | | l
|
-«o-c
. 60 _i
|/ |
|
I
| | | j | | | |
|
I
j -z
i IHttHfc
II
gi I"
s '!
G
c£ )-V
BASE-TO-EMITTER VOLTAGE (V. E > —
COLLECTOR CURRENT (I c l— A 92CS-ieo<
Fig. 2 — Maximum operating area. Fig. 3— Typical transfer characteristics. Fig. 4 — Typical dc beta characteristics.
294
A
POWER TRANSISTORS
BD278, BD278A
High-Current, Silicon N-P-N VERSAWATT Features:
Low saturation voltage:

Transistors V CE (sat) = 1 V max. at l
c = 4 A
For Medium-Power Linear and Switching Service VERSAWATT package (molded-
in Consumer, Automotive, and Industrial Applications
silicon plastic)
The RCA BD278 and BD278A are home- These transistors are intended for a wide Maximum-safe-area-of-operation curve
taxial-base silicon n-p-n transistors sup- variety of medium-power switching and Thermal-cycling rating curve
plied in the JEDEC TO-220AB straight- linear applications such as series regula-
lead VERSAWATT package. They are also tors, solenoid drivers, motor-speed con- TERMINAL DESIGNATIONS
available in the TO-220AA package (leads trols, inverters, output stages for high-
formed to fit a TO-66 socket); to order fidelity amplifiers, and power supply and
this version, specify formed lead No. 6201. vertical-deflection circuits for mono-
chrome and color TV.
MAXIMUM RATINGS, Absolute-Maximum Values: BOTTOM VIEW

BD278 BD278A JEDEC TO-220AB
COLLECTOR-TO-BASE VOLTAGE V CB0 55 70
With external base-to-emitter resistance (Rgg) = 100^2 .... V CER' SUS ' 55 70
With base open V CE q(sus) 45 60
EMITTER-TO-BASE VOLTAGE V FB0 5 5 V
Ol
COLLECTOR CURRENT (Continuous)
BASE CURRENT
I
I
c
B
10
4
10
4
A
A uA
TRANSISTOR DISSIPATION: Pj BOTTOM VIEW MCS-2TS20
At case temperature; up to 25°C 75 75 W
At ambient temperatures up to 25°C 1.8 1.8 W JEOEC TO-Z20AA
At case temperatures above 25°C, derate linearly 0.6 0.6 W/°C

At ambient temperatures above 25°C, derate linearly 0.0144 0.0144 W/°C
TEMPERATURE RANGE:
Atdistance> 1/8 in. (3.17 mm) from case for 10 s max. . . .
COLLECTOR-TC-EMITTER VOLTAGE (V(;

E |.4 V
»'C
i 80
\i
^^ ^
I
1 i*
I
*° i>"
1«-
+*$*fif
*>
<£ ffl
2c
i >
tH
C • "in
COLLECTOR CURRENT d c >— A COLLECTOR-TO- EMITTER VOLTA8E <V CE )— V
MCS-27799
92CS-I79S3RI
Fig. 1 — Thermal-cycling ratings. Fig. 2 — Typical dc beta characteristics. Fig. 3 — Maximum safe operating area.
COLLECTOR-TO-EMITTER VOLTAGE MceI-«v

COLL CTOR-T0- EN»TTER W>LTA0 . 1
c (•4V
CASE TEMP RE<T C ZS'C
_-: jnf 5H: HH £H Til I
10
::::
=i
T 2- *
S •
~i W\
i
• E
§
£! "
i
u 4
;;-:; u:.
: M E
i
•TO i£: s |
,
2
W =ii
TEMPERATURE lT c )-28'Cff||||j||||||| § 0.4
H:!
:ij! Sr CASE
O
ffi 19 2
BASE-TO-EMITTER VOLTASE (Vj£)-V

ttCS-ll
COLLECTOR CURRENT 11(1 — BASE-TO-EMITTER VOLTAGE IV M)-V
Fig. 4 — Typical transfer characteristics. Fig. 5 — Typical gain bandwidth product. Fig. 6— Typical input characteristics.
295
V
POWER TRANSISTORS
BD278,BD278A
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C unless otherwise specified
CHARACTERISTIC SYMBOL VOLTAGE CURRENT

V dc A dc BD278 BD278A UNITS
VC E Veb 'c >B MIN. MAX. MIN. MAX.

With base-to-emitter junction 55 1.5 - 2 -
reverse-biased 70 1.5 2
With base-to-emitter junction reverse- JCEX - -
mA
50 1.5 10
biased and Tc=150°C
mA
65 1.5 10
With base open
'ceo 30 - 2 -
45 2
'ebo 5 - 5 - 5 mA
Col lector-to- Emitter Sustaining Voltage:
With external base-to-emitter VCER (sus) 0.2 55 - 70 -
resistance = 100J2 a
(Rbe) V
With base open 3 vCEO (sus) 0.2 45 - 60 -
DC Forward-Current Transfer Ratio 3
"FE 4 4 15 75 15 75
Base-to-Emitter Voltage 3 V BE 4 4 - 1.8 - 1.8 V
Voltage 3
V CE (sat) 4 0.4 - 1 - 1 V
Common-Emitter Small-Signal
Short-Circuit Forward-Current h fe 4 0.5 15 - 15 -
Transfer Ratio (f = 1 kHz)
Magnitude of Common-Emitter
Small-Signal Short-Circuit
n fe 4 0.5 8 28 8 28
Forward-Current Transfer Ratio
(f = 0.1 MHz)
Forward-Bias Second-Breakdown
's/b 40 1.87 - 1.87 - A
Collector Current (t= 0.5 s)
Thermal Resistance:
R 0JC - 1.67 - 1.67
Junction-to-Case
°c/w
Junction-to-Ambient R 0JA - 70 - 70
a
Pulsed, pulse duration = 300ms, duty factor = 0.018
20 JO 40 SO fO TO
COLLECrOK-TD-CHITTER V0UMC IVÎ—
MK-10-HnTOIva.TME(VK>-¥ nm
MCI-I9M!
Fig. 8— Reverse-bias second-breakdown

Fig. 7 — Typical output characteristics. characteristics.
296
POWER TRANSISTORS
BD450, BD451
Silicon Transistors for 70-Watt Quasi-Complementary- Symmetry

Audio Amplifiers with Hometaxial-Base Output Transistors
The RCA-BD450 and BD451 are n-p-n with seven TO-39 case transistors,
hometaxial-base silicon transistors eleven diodes, and an 84-volt split
particularly suitable for output stages power supply. The amplifier output is
of audio amplifiers. The BD451 is in- directly coupled to an 8-ohm speaker.
tended for 70-W amplifiers with 8-ohm This amplifier is especially suitable
loads and will also deliver 38 with W for instrumentation applications
16-ohm loads. The BD450 is intended where ruggedness is essential. TERMINAL DESIGNATIONS
for70-W amplifiers with 4-ohm loads. The BD450 and BD451 are supplied in
The 70-W amplifier shown in Figs. 2 the JEDEC TO-204MA (formerly TO-3)
and 5 uses two BD451 in conjunction hermetic steel case.
BD450 BD461
VcBO 8° 96 V
VcEO 50 60 V
VCEFKRBE = 100Q) 80 95 V
VEBO 7 V
IC 15 V
7 A JEDEC TO-204MA
IB
AtTc<25*C _ 1f5 _ W
AtTc>25°C See Fig. 1 _
Tstg.Tj -65to200 _ *C
T|_:
from seating plane for 10 s max. 230
NOTE: CURRENT 0ERATINS AT CONSTANT VOLTME
APPLIES OWtY TO THE DISSIPATIONM-MCTED PORTION
TYPICAL PERFORMANCE DATA AND Ij/t-LMTED PORTION OF NAXIMUM-OPERATINS-
For 70-Watt Audio Amplifier

Measured at a line voltage of 220 V, 7> = 25*C, and a frequency of 1kHz, unless otherwise specified.
Power: IM Distortion:
Rated power (8-fi load, at rated 10 dB betow continuous power output
distortion) 70W at 60 Hz and 7 kHz (4:1) .0.1%
Typical power (4-fi load) 70W Sensitivity:
Typical power (16-Q load) 38 W At continuous power-output
Music power (8-fi load, at 5% THD rating 700mV
with regulated supply) W
100
Hum and Noise:
Dynamic power (8-fi load, at 1 % THD with Below continuous power output
regulated supply) 88 W 85 dB
Input shorted CASE TEMPERATURE (Tc)-t
Total Harmonic Distortion: Input open 80 dB
Rated distortion 1.0% 20kQ
Input Resistance Fig. 1 - Derating curve.
With 60-volt split power supply and 2-BD450 substitutedfor 2-BD451.
BOOTSTRAP
CURftCNT
SOURCE
CLASS B
DRIVER
•-P-R
409*4
OUTPUT
A-p-n
B049I
•
'>< x
— -+
tux.-
OVERLOAD •
PROTECTION i •
CIRCUIT
INPUT
(l)*-p-R RCAIAM
(Dp-R-p RCAIAI9 i 4
K>
DIFFERENTIAL
AMPLIFIER -(FEEDBACK") —I -4-
i
\
\ ^N
h ^s*H
p-»-p (Z) 5
4040*
l"*»l
V
CLASS A CLASS B
i
^
OUTPUT
PREDRIVER
»-»-R
DRIVER
P-R-P R-p-R \&
40412 40SM B04SI n
2 1 8
Fig. 2 • Block diagram and transistor complement for 70 watt quasi-complementary-symmetry

audio amplifier with hometaxial-base output transistors. Fig. 3 - Thermal-cycling ratings.
297
POWER TRANSISTORS
BD450, BD451
ELECTRICAL CHARACTERISTICS, A t Case Temperature = 25'C
(Tp)
(
-i —
CURVES MUST BE DERATED LINEARLY
i-
NORMALIZED
LIMITS * WITH INCREASE IN TEMPERATURE I 1. P0WER+-
CHARAC- BD450* BD451A
i
MULTIPLER-
L
TEST CONDITIONS UNITS PULSE OPERATION
'•
»f>
!
TERISTIC Mln. Max. Mln. Max.

VCE = 70V, RBE = 100Q 0.5
>CER
VCE = 85V, RBE = 100Q _ _ mA
.
0.5
>EBO V£B = 4V, Iq = — 1 — 1 mA
VCER IC = 0.2A, RbE = 100Q 80 — 95 — V
fT IC = 1 A, VQE = 4V 0.8 — 0.8 — MHz
IC = 4A, VCE = 4V 20 70
hFE
IC = 6A,VCE = 4V 20 70 COLLECTOR-TO-EMITTER VOLTAGE IV CE I— V
VcE(sat) IC = 4A, lB = 0.4A — — 1

V
IC = 6A,lB = 0.6A 1 Fig. 4 - Maximum operating areas.
IC = 4A, VCE = 4V 1.4

VBE V
IC = 6A, VCE = 4 V 1.4 _
S/b
VCE = 50V, t = 1s 2.3 — A "v—
VCE = 60V, t = 1 s — 1.95
-r-r-
f-UHt
-
/
r-f
/
-V +-f-
*For characteristics curves and test conditions, refer to published data for prototype 2N305S
(Hometaxlal), File 1077.
•A, -l-J-
^ v - IM
^ p
THD^ VRBOULATED
S .A
n
.
i
J. J>H-4^drtTl 1 J,
POWER OUTPUTIPoutI-W
Fig. 6 - Typical Intermodulatlon and total har-

monic distortion as a function of power
output at 1 kHz for 70-W amplifier.
SO WAT TS
/" \
\
10 20 SO 100 200 SO0 IK 2K SKIOK2OXS0K IOOK
>
PREOUENCV-H,
mfmv
Fig. 7 Typical response as a function of fre-
quency at 60-W output for the 70-W
amplifier.
MCM-S04S4
NOTE8:
1. D1-D11 — D1201A.
2. Resistors are Vfc-watt, ± 10%, unless other-
3.
wise specified; values are
Non-inductive resistors.
in ohms. £7^]|(-^2. 9 v,
4. Capacitances are in pF unless otherwise

specified.
5. Mount each device on TO-39 heat sink.
6. Provide heat sink of approx. 1.2 "CM per
output device, with contact thermal resis- -42VNA. +42VNX.
tance of 0.5*C/W max. and Ta = 45 *C max. •2CS-SOMI
Fig. 5 70-watt amplifier circuit featuring quasi-complementary-symmetry output employing

hometaxlal-base construction output transistors: (a) basic amplifier circuit, (b) power-
supply circuit.
298
1 —
POWER TRANSISTORS
BD500, BD501 Series
Silicon Transistors for 40-Watt Full-Complementary- Symmetry

Audio Amplifiers
The BD500-Series and BD501 -Series coupled to an 8-ohm speaker. The
types are p-n-p and n-p-n epitaxial- BD500A and BD501A are intended for
base silicon transistors, respectively, similar 40-watt audio amplifiers ex-
especially suitable for audio-output cept for a 4-ohm speaker and a split TERMINAL DESIGNATIONS
applications. The 40-watt amplifier 46-volt power supply. The BD500 and
shown in Figs. 1 and 5 uses the BD501 are intended for 25-watt audio
BD500B and BD501B in conjunction amplifiers of similar circuitry except
with seven TO-39 transistors, ten for a 4-ohm speaker and a split 40-volt
diodes, and a 64-volt split power sup- power supply.
ply. The amplifier output is directly
BD501 BD501A BD501B N-P-N

- rT
BD500A* BD500B' P-N-P MCS-2HH
BD500*
VCBO 60 70 90 V
BOTTOM VIEW
VCEO 50 60 80 V
VCER(RBE = 100Q) 55 65 85 V JEDEC TO-220AB
VEBO 5 V
ic 10 A
IB 4 A
PT :
AtTc < 25 °C 75 _ W
AtTc>25°C See Figs. 2 and 4
Tstg. Tj
-65 to 150
TV-
from case for 10 s max 230
TYPICAL PERFORMANCE DATA

For 40-Watt Audio Amplifier
Measured at a line voltage of 220 V, T& = 25 °C, and a frequency of 1 kHz, unless otherwise specified.
Power: IHF Power Bandwidth:

Rated power (8-Q load, at rated 3 dB below rated continuous power at
distortion) 40W rated distortion 80 kHz
Typical power (4-Q load) 75 Wi Sensitivity:
Typical power (16-Q load) 22 W At continuous power-output
CASE TEMPERATURE (T
c >-
Total Harmonic Distortion: rating 600mV

Rated distortion 1.0% Hum and Noise: Fig. 2 - Derating curve for all types.
Typical at20W 0.05% Below continuous power output:
IM Distortion: Input shorted 80dB
10 dB below continuous power output at Input open 75 dB
60 Hz and 7 kHz(4:1) 0.1 % Input Resistance 20 kQ
Typical power(4Q load) with 46-volt split power supply and BD500A.BD501 A output 40W
Typical power(4Q load) with 40-volt split power supply and BD500, BD501 output 25W
166,
L- — 1
h :::::
: : : : _ fT MAX.I-TSW
•
BOOTSTRAP «
CURRENT
SOURCE
OVERLOAD i
WS"
l
fe l tr
2 2_u\^ 4
-
.
PROTECTION
CIRCUIT
n-p-n 2N2I02 h tt m% ***i
m
(I)
{ I) p-n-p 2N4036 o
INPUT c •
DIFFERENTIAL
AMPLIFIER
p-n~p<2>
-("FEEDBACK) i-
<•
o
ff
* -s
l\\ r
\
I*'
\ Vf
\ \
y|\V-/
40406 I
»'»8 l | » -I \\ r
%
1] vr-
\
I
CLASS B • 2 4 i.i
DRIVER
p-n-p NUMBER OF THERMAL CYCLES
40634
Fig. 1 -
Block diagram and transistor complement for 40-watt full-complementarysymmetry
audio amplifier. Fig. 3 Thermal-cycling ratings.
.299
POWER TRANSISTORS
BD500, BD501 Series

ELECTRICAL CHARACTERISTICS, At Case Temperature (T )
C --
= 25"C 2
1 j
CASE TEMPERATURE (Tc)-25«C
ES MUST BE DERATED LINEARL
LIMITS* I C (MAX)
CHARAC-
TEST CONDITIONS BD500* BDS00A* BD500B* — CONTINUOU
•
TERISTICS UNITS "o
BD501 BD501A BD501B ~ 4 1
DC OPERATION
1
if
DISSIPATION - LIMITEO
Min. Max. Min. Max. Min. Max. £ t
K
'CER Vce = 45V 1 3 i
«f \V
Rbe = Vce = 55V - - 1 - mA 1 •
%
100 Q VCE = 75 V u *
1 ^\\
>EBO V£B = 5V — 1 — 1 — 1 mA
o V CE0 (MAX.I ]"
J |
VCEO IC = 0.1 A 50 — 60 — 80 — V
0.1
•
•
•60 V (BOSOOA, B09C
-80 V (B0SOOB, BD9C
VCER IC= 0.1 A;Rbe=100Q 55 - 65 — 85 — V
i
4 • •
10
t 4 •
IOO
t 4 • •
IOOO
fr IC= 0.5A;Vce = 4V 5 — — — COLLECTOR-TO-EMITTER VOLTAGE (Vce) —v
5 5 MHz HCt-ION)
IC = 5A; Vce = 4V 15 90 15 90
hFE
IC = 3.5A;V C E = 4V
-
20 120
Fig. 4 Maximum
VcE(sat) IC = 5A;Ib = 0.5A — 1.2 — 1.2 — -
operating areas for all types.
IC = 3.5A;I B = 0.35A V
1
VBE IC = 5A; Vqe = 4V — 1.8 — 1.8 —

IC = 3.5A; Vce = 4V
V
1.5
1 1
Vce = 20 V;t = 0.55 s 3.75 8 LOAD 1 1
'S/b Vqe = 25 V;t = 0.55 s 3 - A

Vqe = 30 V;t = 0.55 s - « = /'
20 WATTS
2N6487
h r
(BD501, 'S^fiT?
iST«T «ni?Si?
s and test condm °ns, refer to published data for prototypes
(File 678)-
\
BD501A); 2N6488 (BD501B); 2N6490 (BD500, BD500A); 2N6491
(BD500B)
For p-n-p devices, voltage and current values are negative. \
10 20 SO KM 200 SOO IK 2K SK KM 20K
\
50K IOOK
FREquCNCT— Hi
Fig. 6 Typical frequency response.
1 1
P-40W
1.
m
t '
•o.
/
-ni 1
'
COS, __ -y
PREOUCNCY— Hi
»»CJ-JI»7
Fig. 7'• Typical total harmonic distortion as a

function of frequency.
NOTES (for Fig. 5):

1. D1-D10— D1201A.
2. Resistors are Vi-watt, ± 10%, unless other-
wise specified; values are in ohms.
3. Non-inductive resistors.
4. Capacitances are in |iF unless otherwise
specified.
5. 55 'C thermal cutout attached to heat sink
of output devices.
6. TO-39 case devices with heat radiator at-
tached.
7. Provide heat sink of approx. 1.2°C/W per
output device with a contact thermal resis- (b)
tance of 1.3'C/W max. and T/\ = 40 °C max.
Fig. 5 - 40watt amplifier circuit featuring fullcomplementarysymmetry output using load line
limiting: (a) basic amplifier circuit, (b) power-supply circuit.
300.
.POWER TRANSISTORS
BD550 Series
Silicon Transistors for 70-, 120-, 200-, and 300-W Quasi-

Complementary-Symmetry Audio Amplifiers
The RCA-BD550, BD550A, and BD550B are several hundred watts of audio output power
silicon n-p-n transistors especially suitable in quasi-complementary-symmetry audio am-
for applications in audio-amplifier circuits, plifier configurations that employ parallel
in which they may be used as either driver output transistors. Circuit examples, a recom-
or output unit. mended complement of transistors, and per-
formance data are shown for 70-, 120-, 200-,
These devices, together with a variety of
and 300-W amplifiers.
other transistors that serve as input devices,
Vbe amplifiers for biasing, current sources, the JEDEC
load-line limiters (for overload protection),
The BD-550-series is supplied in
and predrivers, may be used to develop TO-204MA hermetic steel case.
JEDEC TO-204MA
BD5S0 BDS50A B D5506 AND Is/t-UMITCO PORTION OF MAXIMUM -0PERATINO-

V C BO 130 200 275 UU CURVES. 00 NOT BERATE THE SPECIFIE0
VALUE FOR Ic MAX.
VcEO 11 ° 175 250

VcER<RBE = 100n) 130 200 275
v EBO 5 -
'C
7 _
'B
2 _
PT
AtT C <25°C 150
AtT C >25°C - See Fig. 1
T stg. Tj . .
'
-65 to 200
TL CASE TEMPERATURE (Tc)-t
At distance ^ 1/32 in. (0.8 mm) from seating plane 92CS-19S43
for 10 s max _____
Fig. 1 — Derating curve for all types.
100
•
U
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25 C '
J.
LIMITS 1
CHARAC- TEST CONDITIONS BD550> BD550A* BD550B* O CASE-TEMPERATURE

| UNITS CHANGE (AT. ) 90*C
TERISTIC m
5 J>
VcE= 110 V 1 s «
'CER
VcE=175V - - - mA I
rbe = 100 ft
1
\
VcE = 250 V 1
t9«e\io( I'C \ts •c
VQE = 95 V 5 10 f\(Au- 1 .
150 V - - 5 - mA
'CEO VcE= NUMIER OF THERMAL CYCLES
VcE = 200 V 5
VEB=5V - 1
- 1
- 1 mA Fig. 2- Thermal-cycling ratings for all types.
'EBO
0.2A 110 - 175 - 250 - V
VCEO IC =
IC = 0.2A;RBE = 100n 130 - 200 - 275 - V • CURVES MUST BE DERATED LINEARLY

VCER 4
1
*T IC = 0.2A;VcE=10V 5typ. 5typ. 5typ. MHz 1 1
*
J.
1
Iq = 4 A; VCE = 4 V 15 75 a »-•
~
hFE
2A;VcE = 4V 50 z • \4
1 '*
IC = 15 75 10 u
a: * s
I
C = 4 A;Ib= 0.5 A 2 -
V
tc
« t
>
VcE<sat) _ _ 2
tc
o
l
C = 2A;l B = 0.25A 2
'•'
,
s ^L« _i
4A; Vce = 4V j .
0.75 1.75 •
IC = V i r
VBE o
V 2
I
C = 2A;Vce = 4 1 2 1 vCE0 MA !) 10 V BOSS ))-
t
= 80 V; = MAX) • 290 V (BOSOM)
VqE t 1 S 1.87 Vc E0
= 100V;t = S - 1.5 - - A i t 1 1 1 1 i • l
J* \ 1 •
>S/b VcE 1
= 140 V;t- S 1.07 COLLECTOR-TO-EMITTER VOLTAM (Vfe.) —V

VcE 1
•KS-SOBM
For characteristics curbes and test conditions, refer to published data for prototype RCA8638D (File 1060).
For characteristics curves and test conditions, refer to published data for prototype 2N5240 (File 321).
.301
POWER TRANSISTORS
BD550 Series
70-Watt Amplifier 10
:c
'
The 70-watt amplifier shown in Figs. 4 and 1 t

supply. It is designed for direct coupling to
S uses two BD550 transistors as output de- an 8 ohm load. Figs. 6 and 7 show typical 1
vices, and operates on a 90-volt split power distortion characteristics for the amplifier.
l 4
— M— — I |
-It IT- — e^
BOTH
CHANNELS
u 2
2
clam * !
differential OUTPUT
i
pre driver* e-p-»

»-»-» «) J
•FT** *
y
MULTIPLIER
a-p-ll 001
* * ' ' 6.
MPUT RCAIAW oo 3.1 10 100
DIFFERENTIAL POWER. OUTPUT (P utI— "
AMPLIFIER -(FEEDBACK.) i e »TJ»fl
li-p-n It)
4040* Fig. 6— Typical total harmonic distortion as a
OVERLOAD
PROTECTION function of power output at 1 kHz, for
CIRCUIT
»-»-« RCAIAW the 70-watt amplifier.
(I)
Mp-ll-p RCAIAW
CLASS B
DRIVER
p-e-»
40*72
Fig. 4 — Block diagram and transistor complement for 70-watt quasi-complementary-

10.
symmetry audio amplifier with epitaxial-base output transistors.
Z 4
r
1
z
*
6
5
>'
/
«'
001
6 1 1 • t « • % •
FREOUENCy— Hi
Fig. 7 — Typical total harmonic distortion as a

function of frequency at 35 W, for the
70-watt amplifier.
Typical Performance Data for 70-W Audio

Amplifier
Measured at a line voltage of 220 V, T^ =25°C,
and a frequency of 1 kHz, unless otherwise
specified.
Power:
Rated power (8-ft load,
NOTES: at rated distortion) 70 W
1. D1 D8.D11 1N6391. D9.D10,D12.D13 1N5393 Typical power (16-12 load) 40 W
2. Resistors are 1/2-watt, ±10%. unless otherwise Total Harmonic Distortion:
specified; values are in ohms. Rated distortion . 0.5 %
3. Non-inductive resistors. IM Distortion:
4. Capacitances are in pF unless otherwise specified 10 dB below continuous power
5- 80°C thermal cutout attached to heat sink of output at 60 Hz and 7 kHz (4:1) <0.2% . .
output devices. IHF Power Bandwidth:

220 V THERMAL
ERMAL J
6. Mount each device on TO-3B heat sink. TOUT
SOHl CUTOUT 3 3 dB below rated continuous
7. Attach TO 39 heat sink cap to device and mount NOTE S power at rated distortion
f 5 Hz to 50 kHz .
on same heat sink with the output devices.

*-CÔ—«\p— I Bandwidth at 1 W 5 Hz to 100 kHz . . .
»8. Provide heat sink of approx. 1°C/W par output
2-A Sensitivity:
device with a contact thermal resistance of 0.5°C/W SLOW BLOW
max. and Ta - 46°C max. TYPE At continuous power-
•2CS-3044T output rating 600 mV
92CM- 30446
Hum and Noise:
Below continuous power output:
Input shorted 100 dB
Fig 5 — 70-watt amplifier circuit featuring quasi-complementary-symmetry Input open 85 dB
output employing epitaxial-base construction output transistors: With 2 kft resistance on 20-ft.
cable on input 97 dB
la) basic amplifier circuit, (bj power-supply circuit
Input Resistance 18 kn
302,
POWER TRANSISTORS
BD550 Series
16,
120-Watt Amplifier It is intended for direct coupling to an 8 ohm
s :
The 120-watt amplifier shown in Figs. 8 and load, but may be used on 4 ohm or 16 ohm
9 uses four BD550A transistors as parallel loads as shown in the Typical Performance
units in the amplifier output stages, and Data; Figs. 10 and 1 1 show typical distortion
i '. ;i
operates on a 130-volt split power supply. characteristics for the amplifier.
s
* CHA
0 rH
class * a
differential CLASS S
DRIVER 1
preorivers •
H-P-II 5 •
p-n-p(2) X
40STI
8FTI9 Si HANNb.
s ^, 1
1
i *
^ 1
1
INPUT
0.01
• I
T
4 • • ••
1
* ••
DIFFERENTIAL 0.01 0.1 1 10 •••-oo
AMPLIFIER -(FEEDBACK) 1 t tA pomr output I Pour 1 ~*
»-p-«<2> MCS-MOte
RCAIAII
OVERLOAD Fig. 10 — Typical total harmonic distortion as a
PROTECTION function of power output for single
CIRCUIT
(l)n-p-* RCAIAII channel (8M and both channels
(l)p-a-p RCAIAH driven at 1 kHz for 120-W amplifier.
CURRENT CLAW • OUTPUT

SOURCE DRIVER
n-p-e «»
RCAIAC* 40*Tt 1
IB.
s :
Fig. 8— Block diagram and transistor-complement for 1 20-W quasi-complementary -symmetry

audio amplifier with parallel output transistors. 8 •
KIFCRtNCtt OltfOkYlON
-
(6.
.... "
— -..)
rti
/
l
ai
. z: / ::
!
i :
V /
.,
•
s •s. *' /
I
001
• ft ft * ft 1 « ft > • • 2 4 %%
100 1000
FREOUCNCV-Hi
Fig. 11 — Typical total harmonic distortion as

a function of frequency for 60-W
output for 120-W amplifier.
Typical Performance Data for 120-W Audio

Amplifier
Measured at a line voltage of 220 V, TA =2S°C,
and a frequency of 1 kHz, unless otherwise
specified.
Power:
Rated power (8-il load,
at rated distortion) 120W
Typical power (4-n load) 120 W*
MCM-MMO . .
...
. .
70 W
Typical power (16-n load) .
NOTES: Total Harmonic Distortion:

1. 01 D8- 1N5391;O9.D10-1N914B;D11. Rated Distortion 0.5%
D12 - 1N6393 IM Distortion:
2. Resistors are 1/2 watt, * 10%. unless other-
wise specified; values are in ohms.
10 dB below continuous power
3. Non-inductive resistors. output at 60 Hz and 7 kHz (4 1 : ) . . 0.2%
4. Capacitances are in pF unless otherwise Sensitivity
specified. At continuous power output rating .900 mV
sink of
5. 95 C thermal cutout attached to heat Input Resistance 18 kn
output devices.
IHF Power Bandwidth:
Attach TO-39 heat sink cap to device and 3 dB below rated continuous
mount on same heat sink with the otuput power at rated distortion 5 Hz to 50 kHz
devices. Hum and Noise:
Provide heat sink of approx. 1 C/W per Below continuous power output:
output device with a contact thermal re- 104 dB
Input shorted.
sistance of 0.5 C/W max. and T^ = 45 C max.
. . . . .
input open 88 dB
9JCS- 50449 With 1 kn resistance
9ZCM- 30448 on 20-ft cable on input . . 104 dB
Fig 9 - 120-watt amplifier circuit featuring quasi-complementary-
'With a 90 V split power supply and 4-BD550
symmetry output circuit with parallel output transistors:
substituted for 4-BD550A.
(a) basic amplifier circuit, (b) power-supply circuit.
.303
I BB B
POWER TRANSISTORS
BD550 Series
200-Watt Amplifier split power supply. It is intended for direct (6.
The 200-watt amplifier shown in Figs. 12 coupling to an 8 ohm load, but may be used
and 13 uses eight BD550B transistors, two as on 4-ohm or 16-ohm loads as, shown in the
drivers and six as parallel units in the ampli- Typical Performance Data. Figs. 14 and 15
show the typical distortion characteristics i '
i Z3I
fier output stages, and operates on a 160-volt REFCRI NCE or toAtion <d»* Z]
for the amplifier. f
5
CLASS*
I
f
DIFFERENTIAL CLASS CLASS OUTPUT
j
PRE DRIVERS
p-n-p(2)
BFTI9A
[
PREDRIVER
n-p-n
BUX67A
DRIVER
BO 9908
(3)
n-p-n
BO 5508
*
i
•
,'
//
v»e
:
r~ V
multiplier
n-p-n
RCAIAI8 001
INPUT 2 * • 4 •• 4 «• • 4 ••
DIFFERENTIAL IO0K
AMPLIFIER EDB
n-p-n (2)
-22044
RCAIAI r/l
OVERLOAD
PROTECTION 60 Fig. 14 — Typical total harmonic distortion as a
CIRCUIT
(l)n-p-nRCAIAie function of frequency at 100-W out-
(llp-n-pRCAIAI9
put for 200-rV amplifier.
CURRENT CURRENT CLASS CLASS OUTPUT

SOURCE SOURCE PREDRIVER DRIVER (3»
n-p-n n-p-n p-n-p n-p-n n-p-n
RCAIA09 RCAIA09 BUXS6A BO 550 B BO 5508
9JC -30885
Fig. 12 - Block diagram and transistor complement for 200-W quasi-complementary-symmetry

audio amplifier with parallel output transistors.
z
io a
•
T " II
at
BUXOM 808908 •
T
§ -
-
- ti"
i
-f
_«CFERE )RT ON 05% :
L.L.
| ;
S BOTH -'
In. 1
r:
X
j:
i
'J
F
s
*
-i ?
e,
SIMLC
CHANNEl
0.C 1
2 * • •
01
24 *'
1
4
l>
•
00* 4 ••
power output (Pout'—

•SCS- »043
Fig. 15- Typical total harmonic distortion as a
function of power output for single
channel and both channels driven at
1 kHz for 200-W amplifier.
NOTES:
1. 01-08 - 1N5391, D9.D10
012- 11*5393
2. Ronton are 1/2-«ntt, ±10%. (intra otherwise
specified; values arc in ohms.
4. Capacitances are in p F unless otherwise
specified.
5. 80°C thermal cutout attached to heat
sink of output devices.
7. Attach TO-39 heat sink cap to device
and mount on same heat sink with the output
devices.
8. Provide heat sink of approx. 1°C/W per output
device with a contact thermal resistance of
0.5°C/W max. and Ta. 45°C max.
C- ,, --- SaCS- 30442

rig. tj— jou-watt amplifier-circuit featuring quasi-complementary-symmetry
output circuit with parallel output transistors: (a) basic amplifier
circuit, (b) power-supply circuit.
304
POWER TRANSISTORS
BD550 Series
Typical Performance Data for 200-W Audio Amplifier •
• AMKNT TEMPERATURE (TA )-28%
BOTH CHANNELS DNVEM:
Measured at a line voltage of 220 V, T& = 25° C, and a frequency of 1 kHz, unless otherwise specified. • n-SOO W PER CHANMEL
4 11-300 W PER CHANNEL
Power: \i
Rated power (8-fi load, at rated distortion) 200 W p *'•
' 8:::
Typical power (4-n load) 200 W- f
Typical power (16-n load) 120 W f s /
Total Harmonic Distortion:-
Rated distortion 0.5%
X 4 \m + *-
i'
IM Distortion:
10dB below continuous power output at 60 Hz and 7 kHz (4:1) 0.2% f :
Sensitivity:
ana
At continuous power output rating 900 mV
Input Resistance 18 kfi 10*
IHF Power Bandwidth:

FREQUENCY (t) — HI
3 dB below rated continuous power at rated distortion 5 Hz to 35 kHz
Hum and Noise: Fig. 17 — Typical total harmonic distortion as a
Below continuous power output: function of frequency for 300-W
Input shorted. 96 dB amplifier.
Input open 84 dB
With 2 kft resistance on 20-ft cable on input 94 dB
* With a 1 10-V split power supply and 8-BD550A substituted for 8-BD550B.
300-Watt Amplifier and operates on a 172-volt split power

supply. It is intended for direct coupling to
The 300-watt amplifier shown in Figs. 16
and 19 uses two BD550B transistors
an 8 ohm load, but may be used on 4 ohm
as
or 16 ohm loads as shown in the typical
?'
drivers and sixteen BD550B transistors as
performance data (Figs. 17, 18, 20, and 21).
parallel units in the amplifier output stages.
VOLTAGE CLASS e CLASS OUTPUT

AMPLIFIER PREDRIVER DRIVER (8)
p-o-p T n-p-n n-p-n n-p-n
BFTI9A BUX6TA BO 550 B BOSSOB
r\ FREQUENCY - Hi
sN
(I)
LEVEL P2CS-2T29TW
TRANSLATOR FEE Dei jck)
n-p-n p-n-p V
CA3K 40327 L
r
BFTI9A r
i 0VERL0A0
,
-d Fig. 18 — Typical frequency response for 300-W

BIAS
>-»-» PROTECTION amplifier.
RCAIAI*
aRCUIT
SEE Fie.l»(C)
L. J
VOLTACE ,
CLASS! CLASS OUTPUT
AMPUFEft i
PREDRIVER DRIVER (8)
p-«-p n-p-n n-p-n
40327 UXCCA BOSSOB BOSSOB
f"rr
I'L
»2CM- 5O690
Ratings and characteristics of type CA3100
are given in RCA data bulletin File No. 625
Fig. 16 - Block diagram and transistor complement for 300-W quasi-complementary-symmetry audio
amplifier with parallel output transistors.
Typical Performance Data for 300-W Audio Amplifier

Measured at a line voltage of 220 V, T# =25°C, and a frequency of 1 kHz, unless otherwise specified.
Rated Power (8-ft load at rated distortion) 300 W
Typical power (4-Ii load) 300 W"
Typical power (16-n load 160 W
Total Harmonic Distortion (THD) See Figs. 1 7 and 21
Inter modulation Distortion (I MD) See Fig. 20

Sensitivity 1 .6 V for 300 W
Input Impedance 10 kft
Hum and Noise:
Below rated power output:
Open input 104 dB
Shorted input 112 dB
Phase Shift +1°at 20 Hz,-13° at 20 kHz
Slew Rate 35 Mint
Rise Time 2.5 /is
Damping Factor 200

"With 120 V split power supply and 18-BD550A substituted for 18-BD550B.
.305
*
POWER TRANSISTORS
BD550 Series
moimtt yunra
•». k. io.;:i iJo.li.
eossoa*
T~¥>
ttr ) IDLE CUMKNT SIT FCT SO »V *C*0SS 0.1 S KSHTOH
(a)
NOTES:
1. Resistors are 1/2 watt, i5% carbon, unless
otherwise specified; values are in ohms.
3. Capacitances are in jiF unless otherwise
specified.
4. K1 - Relay, tingle-pole, single-throw,
normally closed, with 24-V, 3 coil.mA
5. TSS1 - 70°C thermal cutout attached to
heat sink for output devices.
6. S1 - 10-A circuit breaker.
7. Common heat sink - 175 cm2 minimum.
8. Provide heat sink of approx. 1"C/W per
output device with a contact thermal
resistance of 0.5"C/W max. and
1a * <6"C max.
Fig. 19 - 300-W audio amplifier circuit featuring quasi-complementary
92CL- 30443 symmetry with parallel output transistors: (a) basic amplifier
circuit, (b) power-supply circuit, and (c) protection circuit.
it
AMBIENT TEMPERATURE (T,^•2sn; • AMBIENT TEMPERATURE (TA |-2S«C
OM
: o.07
gjooe : JS
S>
f is,
IjjjoOS
It .la
^
f ••
1 IESI0UAL WI0T» >
LOAO-I 1 s
on 1 IAN0 NOISE
I
1 rri
1 rrr—irri i tr
-1
rtr
0.001 1 II Nil :s 1
01 N 01 .i 10 NO
R OUTPUT (four' —
•ecs-trusm 92CS-272MRI
Fig. 20 — Typical intermodulation distortion Fig. 21 - Typical total harmonic distortion
as a function of power at 60 Hz as a function of power at 1 kHz,
and 7 kHz with both channels both channels driven, for 300-W
driven for 300-W amplifier. amplifier.
306
POWER TRANSISTORS
BDX33, BDX33A, BDX33B, BDX33C, BDX33D,

BDX34, BDX34A, BDX34B, BDX34C
10-Ampere N-P-N and P-N-P Darlington TZl**********.
Power Transistors High reverse second-breakdown capability
Applications:
40-60-80-100-120 Volts, 70 Watts
Power switching
Hammer drivers
Gain of 750 at 4 A (BDX33, BDX33A, BDX34, BDX34A) Series and shunt regulators
Audio amplifiers
Gain of 750 at 3A (BDX33B, BDX33C, BDX33D, BDX34B, BDX34C)
These RCA devices are monolithic silicon complementary to the BDX34,

transistors are
n-p-n and p-n-p Darlington transistors de- BDX34A, BDX34B, and BDX34C p-n-p
signed for low- and medium-frequency power devices.
applications. The high gain of these devices supplied in the
All these transistors are
makes it possible for them to be driven
JEDEC TO-220AB package.
directly from integrated circuits. The BDX33,
BDX33A, BDX33B, and BDX33C n-p-n
MAXIMUM RATINGS. Absolute-Maximum Values BDX33 BDX33A BDX33B BDX33C BDX33D
BDX34 BDX34A BDX34B BDX34C* BOTTOM VIEW
COLLECTOR-TO-BASE VOLTAGE V CBO 45 60 80 100 120 V
COLLECTOR-TO-EMITTER VOLTAGE: JEDEC TO-220AB
With external bese-to-emitter resistance (Rbe> = 100J1. sustaining vcer<sus) 45 60 80 100 120 V
V CEO lsusl 60 80 100 120 V
With base open, sustaining
V c ex(«"s) 60 80 100 120 V
With base r oversi biased V b e - -1.5 V
EMITTER-TO-BASE VOLTAGE V£BO
CONTINUOUS COLLECTOR CURRENT >C
CONTINUOUS BASE CURRENT 1/8 mm) from case for 10 s max 238 °C
At distances in. (3.17
Fo-
80 120
45 49 I sol
10 60 100
I 1
» eo iod
COLLECTOR-TO-EMITTER VOLTAGE (Vce)— V
COLLECTOR-TO-EMITTER VOLTAGE <Vce>— V
Fig. 1 — Maximum operating areas for Fig. 2 — Maximum operating areas for
BDX33-series types. BDX34-series types.
307
U
POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, At Cut Temperature (Tc) 25°C Unless Otherwise Specified 100,
TEST CONDITIONS* LIMITS *
SYMBOL
VCB
VOLTAGE
V dc
VCE VBE
CURRENT
'c
A dc
>B Min.
BDX33
BDX34*
BOX33A BDX33B BOX33C BDX33D
BDX34A* BDX34B* BDX34C+ BDX33D+
Mix. Min. Max Min. Max Min.
UNITS
Max Min. Max.

I
I
*
*
3
s
^xs
ceo
60 0.5 s io-
X Niv
With base open
50
40
i
V
30 x*
20 0.5
60
— - X5*
10
'CEO 50
t
vJ>
ivTr^s
T c - 100°C 40 '
i )' K 4 K>»
30 NUMBER OF THERMAL CYCLES
20 10 92CS- 22741
mA
120 1
Fig. 3— Thermal-cycling rating chart for
100 all types.
'CBO 80
60
45 1
120
'CBO 100 5
TC -100°C 80
60
45 5
>EBO -5 - 10 - 10 - 10 - 10 - 10 mA
0.1* 120
v CEO ,sus) 0.1* '
4
0.1* 45 60 80 : 2 io
—
5?-*^""
V CER (sus) 0.1* 120 - 1? ! t "^
(R BE )-100fi
0.1'
V «
2
0.1* 45 60 80 II *&
-1.5 0.1* 120
"•
IO
3
«&
V CEV (sus) -1.5 0.1* - - - 100 - - ^.i
oy
-T.5 0.1* 45 60 80 ^v
3 3* - - 750 - 750 - 750 - \\

"FE
3 4* 750 2 \\
750 IO
0.1 10 10
V BE 3 3* - - - 2.5 - 2.5 - 2.5 COLLECTOR CURRENT (I c ) —*

3 4* 2.5 2.5
V
3" - - - - Fig. 4 — Typical dc-beta characteristics for
V CE (sat) 0J006 2.5 2.5 2.5
4' 0008 _ 2.5
V BDX33-series types.
2.5
vF 8 - 4 - 4 - 4 - 4 - 4 V
hfe
- 5 1 1000 - 1000 - 1000 - 1000 - 1000 -
f 1 kHz
h fe
5 1 20 - 20 - 20 - 20 - 20 -
f = 1.0 MHz
E S/bb
= ioon
Rbe
L » 12 mH, types "
BOX 33 types 1.5 4.5 120 120 120 120 120 1 ;
L -3 mH, mJ I
80X34 types 1.5 4.5 30 _ 30 _ 30 30 30 I io

4 i i
_
'S/b
tp - 0.5 s nonrep. 25 2.8 - 2.8 - 2.8 - 2.8 - 2.8 -
BOX33 types 36 1 1 1 1 1
2
BDX34 types -20 - - - - A II

-3.5 -3.5 -3.5 -3.5 -3.5 -. ° 3
<?/!* '
io
-33
"«JC 1 1
- 1.78 1.78 - 1.78 - 1.78 - 1.78 °c/w| 5S
<ys i

* Pulsed: Pulse duration - 300
y\
iu. duty factor * 1.8%
l 1
Es/b is *fined »» *• energy at which second breakdown occurs under specified reverse bias conditions. COLLECTOR CURRENT II C )-A
E S/b " 1/2Ll a where L is a series load or leakage inductance and is the peak collector current.
I
Fig. 5— Typical dc-beta characteristics for

BDX34-series types.
308
A A
POWER TRANSISTORS

COLLECTOR SUPPLY VOLTAGE (VqcI-BOV
IB, --Ibj-Ic""
S3
<
1
3
0I2.S
If
2.3
S '0
O
7.9 II 1
<:«•%£
L *
15
/
u 9 llllllllHli'ffi
- 1
2.9
0.5
It.
BASE-TO-EMITTER VOLTAGE (V BE ) V COLLECTOR CURRENT (Ir)

*-
— 92CS-19920
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [vC El»o«]-V
92CS-20T0I
F/ji. 7 — Typical saturated switching-time
Fig. 6 — Typical transfer characteristics for characteristics for BDX33-series Fig. 8 — Typical saturation characteristics for
BDX33-series types. types. BDX34-series types.
1.4 IS
r ,
T
1.2
<t
101 ». 25'C
"<.
S. 0.8
t
.... 1 |yf] I
C 'IB IFORCEO hFEl"
S O.G
1 1 1 1 1 1 1
| 111/]' TC .I2S'C W~-

1 5
0.4 i
Ir
0.2
0.1
BASE-TO-EMITTER VOLTAGE (Ve E >— V COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v CE Isotlj-

t2CS-2086S
Fig. 10 — Typical saturated switching-time

Fig. 9— Typical transfer characteristics for characteristics for BDX34-series Fig. 11 — Typical saturation characteristics for
BDX34-series types. types. BDX33-series types.
COLLECTOR-TO-EMITTER VOLTAGE (VCEI"= » : CASE TEMP ERATUI E (T C )-2S'C j|ll||||ll|[ llllffi

IIIHIH
COLLECTOR-TO-EMITTER VOLTAGE (VCE I-5V rrTHtlHT
S j
C< SE TEMPERATURE (TC )'29"C
<
IS
12.9
Ft —jntjjjttt 3££ !
l WW
IHIIiilliillllllllMlllllllllllll
E S «
1
'
S <o
P" J
5
14
12
P^^ssiS
mimioiBA
S 7.3
1 |ffifflf««A
: i •
i jgmffliwAt
4
2.3 WjUBoi
2
10
-TO-EMITTER VOLTAGE IV B E>— V-

FREQUENCY 111 — MHl COLLECTOR-TO-EMITTER VOLTAGE (Vc E l-V g2cs-l»25
Fig. 12 — Typical small-signal gain for Fig. 13 — Typical input characteristics for Fig. 14 — Typical output characteristics for
BDX33-series types. BDX33-series types. BDX33-series types.
I6«
XH.LECTOR-TO-EMITTER VOLTAGE (Vi-fI •-»¥
CASE Tl IMPERATURE (Tc I.2S*C
£ 3
">'
1
I '4
! r
1 !
'
•
•
3 4
1
i
'i
•I
1 1 1
J 1. 1
0.001 0.01
BASE-TO-EMITTER VOLTAGE IVBE 1- v
FREQUENCY!!! — MHt
Fig. IS— Typical small-signal gain for Fig. 16 — Typical input characteristics tor Fig. 17 — Typical output characteristics for
BDX34-series types. BDX34-series types. BDX34-series types.
309
POWER TRANSISTORS
15- Ampere N-P-N Darlington Power Transistors Features:

40-60-80-100 Volts, 125 Watts Gain of 1000 at 5 Amperes High reverse second-breakdown capability
Applications:
Power switching
The RCA-BDX83, BDX83A, BDX83B, and
Hammer drivers
BDX83C are monolithic silicon Darlington Series and shunt regulators
transistors designed for low- and medium-
Audio amplifiers
frequency power applications. The high gain
of these devices makes it possible for them
to be driven directly from integrated circuits.
The BDX83-series types are supplied in the
JEDEC TO-3 hermetic steel package.
Fig. 1 — Schematic diagram for all types.

DX83 BDX83A BOX83B BDX83C JEDEC TO-3
45 60 80 100 V 100
'CEO (sus) 45 60 80 100 V

* .
5 5 5 5 V
i
10 10 10 10 A
i
15 15 15 15 A CASE-TEMPERATURE
CHANGE (ATc )"50»C
\
0.25 0.25 0.25 0.25 A
s
s \
Tc < 25°C 125 125 125 125 W *

o \
TC > 25 ° C Derate linearly at 0.714 W/°C

Tstg.T|
S'AlOO'C
\75 "
-65 to +200 °C 10 \l
a ,
NUMBER OF THERMAL CYCLES 92CS-I99
At distances >
1/32 in. (0.8 mm) Fig. 3— Thermal-cycling rating chart for
from seating plane for 10 s max. °C all types.
s •
it *
t ~ \
— *'
:
rS-' 2|
* k>-
7\
r [
I'J
i&
A r\
-
i
• • ib i IJ>
COLLICTOR Oimtm del—* »K»-WI
Fig. 4 — Typical dc-beta characteristics

for all types.
COLLtCTOR-TO-tMCTTtR'vOLTASC <«t c )-SV

1
t ,
1 ,o»
*
i
i-
10
- — --- w «~ |00 *>
COLLECTOR- TO- EMITTER VOLTAGE <V )-V 31 '
CE MCJ-IM
FRCOUCNCT(f)— MHI
92CM-29I44 Fig. 5 — Typical small-signal gain for
Fig. 2 — Maximum operating area for all types. all types.
310
1 V
POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc ) - 25°C Unless Otherwise
Specified

CHARAC-
VOLTAGE CURRENT BDX83A UNITS
TERISTIC BDX83
Vote Adc
SYMBOL
VCE VE B Vbe 'c <B
Min. Max. Min. Max.
20 — 1 —
'ceo 30 1
45 -1.5 — 0.5 -
'CEV -1.5 0.5
60
- -
mA
45 -1.5 3
T C =150°C
60 -1.5 3
5 - 5 - 5 mA Fig. 6 — Minimum values of reverse-bias
'EBO
- - second-breakdo wn characteristic
V CE0 (sus) 0.1a 45 60 V
(Es/Ij) for all types.
3 ia 750 750
3 5a 1000 - 1000 - COU.ECTOR-TO-EMITTER VOLTME (VCE>* * v
hFE ||| III If"
3 10a 250 250 IS
- -
Vbe
3 5a
10a
2.8
4.5
2.8
4.5
V « 114
ii |Hi J Ni^ |8»illi
3
V CE (sat) 5a 0.01a - 2 - 2
1 •
V i
vF -10 - 4 - 4
h fe
i"
f = 1 kHz
5 1 1000 - 1000 - i
•
IJMlffK^
Mf = 1 MHz
5 1 20 - 20 -
•AJC-TO-EMTTTER VOLTAGE IV U )—
E S /b b
- - Fig. 7 — Typical input characteristics
L= 12 mH, -1.5 4.5 120 120 mJ
for all types.
R BE = 100 ft
35 2.2 C0LLECTOR-T0-EMITTER VOLTAGE (Vcf )• 5V

'S/b
t= 1 s, 50 - 0.9 - A
<
non rep. 30 4.16 4.16 1
"iias
R 0JC - 1.4 - 1.4 °C/W
+\& cf
:-h4V
T'
a Pulsed: Pulse duration = 300 ms, duty factor = 1.8%.
° 7.5 Ipsas*
which second breakdown occurs under specified reverse-bias conditions. o Sti
^S/b s defined as the energy at
'
111'
u 9 r
Ee/ b = /jLI 2 where L is a series load or leakage inductance, and is the peak collector current.
1
I
o
29
BASE -TO- EMITTER VOLTAGE <V BE ) V

92CS-I9924RI

for all types.
CA. K TEMPERATURE COLLECTOR SUPPLY VOLTASE IVCC )-20V
S3
I 6| -!», •I C /500,TC -25*C
19
IOO, 25'C
TTTfntflTITfnTf
T 7
lUlOQ I9Q'C 1
3
n
14
I ^'curremtW, 7.0«>»5j8 2.9
Jt
£
I 12 ^ jO»A
io ICX >,E»'C
§
10
GwAj
r»n 'c ' 'a iporced upcl-iooof I'
335 1 1 1 1 1 1 1 1
TC .I90«C
1 1 1 1 1 1 1 1 1 1 1
8
2mA l/l H II 1 1 1 1 1 1 1 1 H+
( J 9
lliwA^
4 1^
0.5
:m
2
m
las:
—V
-*
COLLECTOR-TO-EMITTER VOLTAGE (VCE )-V COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v CE (Mil] COLLECTOR CURRENT (I c >-
92CS-I9920RI
92CS- 20496
Fig. 9— Typical output characteristics Fig. 10— Typical saturation characteristics Fig. 11 — Typical saturated switching time
for all types. for all types. characteristics for all types.
311
POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C Unless Otherwise

Specified

CHARAC-
TERISTIC
VOLTAGE CURRENT
BDX83B BDX83C UNITS
Vdc Adc
SYMBOL
V CE V EB vBe c >B
Min. Max. Min. Max.
40 - 1
-
'ceo 50 1
80 -1.5 - 0.5 -
'CEV 100 -1.5 0.5
-1.5 - - mA
80 3
Tc = 150°C
100 -1.5 3
'EBO 5 - 5 - 5 mA
V CE0 (sus) 0.1 a 80 - 100 - V
a 750
3 1 750
"FE 3 5a 1000 - 1000 -
3 10 a 250 250
3 5a — 2.8 - 2.8
vBe V
3 10 a 4.5 4.5
V CE (sat) 5a 0.01 a - 2 - 2
V
vF -10 - 4 - 4
h fe
5 1 1000 - 1000 -
f = 1 kHz
h fe|
l
5 1 20 - 20 -
f = 1 MHz
b
Es/b
L= 12 mH, -1.5 4.5 120 - 120 - mJ
R BE = 100 D.
'S/b 70 0.37
t=1s, 85 - 0.25 - A
non rep. 30 4.16 4.16
R 0JC - 1.4 - 1.4 °C/W
a Pulsed: Pulse duration = 300 duty factor = 1 .8%.

/is,
Ec/h defined as the energy at which second breakdown occurs under specified reverse-bias conditions.
is
2
Ec/h « ViLl where L is a series load or leakage inductance, and is the peak collector current.
I
312
POWER TRANSISTORS
BDY29
Features:
Hometaxial-Base High-Current Silicon at High dissipation capability
N-P-N Transistor High V££x ratings

15-A specification for h FE andVCE (sat)
Rugged Silicon N-P-N Devices for Applications
in Industrial and Commercial Equipment
The RCA-BDY29 is a hometaxial-base silicon, n-p-n transistor driver and output stages, dc-to-dc converters, inverters, and
intended for a wide variety of high-power high-current appli- solenoid (h?mmer)/relay driver service.
cations. Typical applications for the BDY29 include power- The device is supplied in the popular JEDEC TO-3 package.
switching circuits, audio amplifiers, series- and shunt-regulators,
COLLECTOR-TO-BASE VOLTAGE V CBQ

COLLECTOR-TC-EMITTER VOLTAGE:
Whh-1.SV(V BE ) »R BE - 10012 V CEX
With bate open .
"CEO
EMITTER-TO-BASE VOLTAGE *EBO
At case temperatures up to. 25 C 220
At case tempwetures above 25 C Derate linearly to 200 C
TEMPERATURE RANGE:
At distance > 1/32 in. (0.8 mm) from seating plane for 10 s max.
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tc) = 2S°C Unless Otherwise Specified

VOLTAGE CURRENT
CHARACTERISTIC SYMBOL BDY29 UNITS
Vdc Adc
VCB VCE VBE >C <B Min. Max.

With emitter open 'CBO 100 -. 1 mA
With base-emitter junction reverse-biased 100 -1.5 - 1 mA rTjISl
'CEX
1
With base-emitter junction reverse-biased

&TC =150°C 100 -1.5 - 10 mA i
'CEX
k7<y
With base open 60 - 2 mA
'ceo ? "
1
Emitter Cutoff Current -7 - 2 mA

'ebo
»
\ 1 \T«*
DC Forward Current Transfer Ratio "fe 2 15" 15 60
V*. T^s
Collector-to-Emitter Sustaining Voltage:
With base-emitter junction reverse-biased
<R = tOO n
B E' V CEX (sus) -1.5 0.2 90 _ V
20
s
% a
V V
IN
..
E 4 1 1 2
number of thermal cycles

(R BE ) = ioon V CER (sus) 0.2 85 - V Fig. 1 — Thermal-cycling rating chart
With base open v CEO ,su$) 0.2 75 - • V
Base-to-Emitter Voltage v Be 4 30* - 3.5 V
Collector-to-Emitter Saturation Voltage V CE (sat) 15* 1.5 - 1.2 V
Second-Breakdown Collector Current:

With base forward-biased and 1 -s,
nonrepetitive pulse
b 60 3.66 _ A
's/b
Second- Breakdown Engergy:

L=40mH, R BE = 100fi E<5/b
C -1.5 5 500 _ mj
Magnitude of Common-Emitter, Small-Signal,

Short-Circuit, Forward Current Transfer Ratio: 16
f = 0.05 MHz h fe| 4 1 4 (Typ.)
l
Common-Emitter, Small-Signal, Short-Circuit,

Forward Current Transfer Ratio:
f = 1 kHz hfe 4 1 40 _
Thermal Resistance:
Junction-to-Case R ex - 0.8 "C/W
Fig. 2— Typical dc beta characteristics.
"Pulsed; pulse duration = 300 us. rep. rate = 60 Hz; duty factor < 2%.
b lc», is defined as the current at which second breakdown occurs at a specified collector voltage with the emitter-base j
forward biased for transistor operation in the active region.
c under specified reverse-bias conditions.
Esa, is defined as the energy at which second breakdown occurs
ES/b = 1 / 2L 2 where L is a series load or leakage inductance and is the peak collector current.
' '
I
313
V V
POWER TRANSISTORS
BDY29
COLLECTOR- TO-EMITTER VOLTAGE (VCE ) 2V 1
1 1 1 1 1 i 1 t" I
ftm LnT
Uf
!» 1
£ 20
3..
1
jjip
u 10
BASE-TO-EMITTER VOLTAGE <Vbe> —

Fig. 4 — Typical transfer characteristics.
2 4 6 8 |Q 2 4 6 e 100 2
collector-to-emitter voltage (Vce» —v 92CS-2463I

Fig. 5 — Typical saturation-voltage characteristics.
Fig. 3 — Maximum operating areas.
COLLECTOR-TO-EMTTER VOLTAGE llllllllllllllll CASE TEH PER TURE T C I- 25"C
a- > "0
1
at
< °* "CEX
" at
WrI 111 1111111 llllllll In
80
3!
TO
j|
" a2 30
0.1
EXTERNAL BASE-TO-EMITTER RESISTANCE <R BE )—fl

a i I.S 2
-TO-EMITTER VOLTAGE <V« )— COLLECTOR-TO-EMITTER VOLTAOE IVe£> —V
F/fir. 5 — Typical input characteristics. Fig. 7 — Typical output characteristics. resistance.
314
; : A
POWER TRANSISTORS
BDY37
Features:
Hometaxial-Base, High-Current Silicon High dissipation capability — 150 W
N-P-N Transistor 8-A specification for hpg, Vfjg, and
V CEX - 16° V min.

V CE (sat)
Rugged High-Voltage Device for Applications

in Industrial and Commercial Equipment
The RCA-BDY 37 a hometaxial-base silicon n-p-n transistor

is and output stages, dc-to-dc converters, inverters, and solenoid
intended for a wide variety of high-voltage high-current (hammer)/relay driver The BDY37
service. employs the
applications. Typical applications include power-switching popular JEDEC TO-3 package, E-
circuits, audio amplifiers, series- and shunt-regulator driver
MAXIMUM RATINGS. Abtoluu-Mtximum Vtlutz:
COLLECTOR TO-BASE VOLTAGE V C BO

With ban open Vqeo 140
With rtvtrM bin <VgE> of -1.5 V Vcex 160
EMITTER TO-BASE VOLTAGE V EB0
COLLECTOR CURRENT:
Continuous Iq
H" 'CM
BASE CURRENT:
Continuous Ifl
•"•• k I
BM
At cast tt mperatures up to 2S°C ISO W
At cast temperatures above 2S°C
Derate linearly to 2O0°C
TEMPERATURE RANGE:
Storage & Operating (Junction) -65 to +200 °C
At distances > 1/32 in. (0.8 mm) from cese lor 10s max 230 °C
CASE TEMPERATURE (TC )*25°C > Tj MAX..20< •c
(CURVES MUST BE DERATED LINEARLY -wo

.' 8s-
i
i * y
NS
o l^v
s
."1 s
s t •*>« I • t •
b» I0« «
NUHatR OF THERMAL CYCLES
Fig. 2 — Thermal-cycling rating chart.
COLLECTOR-TO-EWTTER VOLTAGE IVCE I-4V

-1,200
? *v 1 1 I II 1 1
. 1 1 III 1 1
IZ8»<
^ A-
i:
.^
—< \
i no
' *
2
1- *J '
'
s^
\^
^ '^ s
•
a 04 0.1
COLLECTOR CURRENT II C I—
COLLECTOR -TO- EMITTER V0LTA6E (V rp )— V
92CS- 21477
Fig. 3 — Typical dc beta characteristics.
315
" V V
POWER TRANSISTORS
BDY37
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tc> 2S°C Unless Otherwise Specified

BDY37
Vdc Adc UNITS
VCB VCE V E B VBE c >E >B Min. Max.
With emitter open 'CBO 140 - 2 mA
reverse-biased 'CEX 140 -1.5 - 2 mA
reverse-biased and Tq - 1 50°C 'CEX 140 -1.5 - 10 mA
With base open
'CEO 120 - 10 mA
'ebo 7 - 5 mA
DC Forward-Current Transfer Ratio "FE 4 8» 15 60
Voltage:
biased (R - 100 «)
V CEX ,SUS ' -1.5 0.1 160 - V
BE
V CER (sus) - Fig. 4 — Typical transfer characteristics.
0.2* 150 V
resistance (Rg ) - 100 $2
E
With base open V CE0 (sus) 0.2» 140 - V
Base-to- Emitter Voltage VBE 4 8» - 2.2 V
Collector-to-Emitter Saturation -
Voltage
V CE (sat) 8» 0.8 1.4 V
Second-Breakdown Collector
Current :
10 COLLECTOR CURRENT (X
C )/BASE CURRENT (I
B I* 10
"?=£
With base forward-biased and
l
S/bb 60 A
1-s nonrepetitive pulse 2.5 7
1 1 1 II 1 | II
/
Second-Breakdown Energy- CASE TEMPERATURE (TC )"25*C ^,
E S/be -1.5 -
/
2.5 0.125 J
L = 40mH, R BE = 100 $2
125*
- i € /
Forward-Current Transfer l"fel 4 1 4
,
Ratio { f - SO kHz) 1
a /
Common- Emitter, Small-Signal, (
Short-Circuit, Forward-Current "fe 4 1 40 -
Transfer Ratio (f * 1 kHz) 01 i
Thermal Resistance 1
R 8JC - 1.17 °C/W COLLECTOR-TO-EMITTER SATURATION VOLTAGE |vce (»ot)|—

Junction-to-Case
* Pulsed; pulse duration * 300 in. rep. rate - 60 Hz, duty factor < 2%. Fig. 5 — Typical staturation-voltage
•» lg/b '* defined as the current at which second breakdown occurs at a specified collector voltage with the emitter-base junction characteristics.
forward-biased for transistor operation in the active region.
c Eg/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions. Eg/b - 1/2LI 2 where
L is a series load or leakage inductance and I is the peak collector current.
CASE TEMPERATURE <TC ) -ZS-C
<
1
£'"
10 RASE CURRENT (IjY'SOd mA
| I 1 1 1 1 1 1 1 1 1 1 1 1 1 I 1 1 1
f
400 »A
H JOO«A
j zaomA:
!3 s
100 »A -
jso'iiiA';
Z.S
COLLECTOR-TO-EMITTER VOLTASE IVjjj— BASE-TO-EMITTER VOLTAGE <V BE >-
Fig. 6 — Typical output characteristics. Fig. 7 — Typical input characteristics.
316
! V
POWER TRANSISTORS
BDY71
Features:
Hometaxial-Base, Medium-Power Maximum safe-area-of-operation curves for dc and pulse
Silicon N-P-N Transistor operation

V CEV (sus) 90 V min
For Intermediate-Power Applications in Industrial and Commercial Equipment Low saturation voltage: V CE (sat) - 1 JO V at l - 0.5 A
c
Applications:
The RCA-BDY71 is a hometaxial-base silicon n-p-n tran- Power switching circuits
sistor intended for a wide variety of medium- to high-power
Series- and shunt-regulator driver and output stages TERMINAL DESIGNATIONS
applications. It supplied in the JEDEC TO-66 hermetii
package.
Solenoid drivers

With base open Vceq
With external base-to-emitter resistance (Rgg* = 100n Veep (si
With base reverse-biased (V BE - -1 .5 V) V CEV (si
JEOEC TO-66
CONTINUOUS COLLECTOR CURRENT I
c
B
At case temperature up to 25°C 29 W
At temperatures above 25°C Derate linearly to 200 C
TEMPERATURE RANGE:
Storage & Operating (Junction) -65 to 200 °C
At distance > 1/32 in. (0.8 mm) from seating plane for 10 s max 235 °C
CASE TEMPERATURE (Tc)« 25 °C

Fig. 2- Thermal-cycling rating chart.
i 1 1
O.OI 0.1
COLLECTOR CURRENT (I e >-
Fig. 3— Typical dc beta characteristics.
COLLECTOR-TO-EMITTER VOLTAGE (Ver) -4V

CASE TEMPERATURE (Tc)'ZS' C
14
3
U
i
U 1.0
COLLECTOR-TO-EMITTER VOLTAGE (VCE ) — i

" 0.6
Fig. 1 — Maximum operating areas for BDY71. i

0.4
2
1 > 1 3
COLLECTOR CURRENT CI C 1— to*
Fig. 4 — Typical gain-bandwidth product.
317
POWER TRANSISTORS
BDY71
ELECTRICAL CHARACTERISTICS. At Case Temperature (TqI = 25°C Unless Otherwise Specified

Vde Adc BDY71
VCE V BE •c <B
Min. Max.
With base open 30 _ 0.5 mA
'CEO
With base-emitter
'CEX
junction reverse-biased 90 -1.5 _ 1 mA
atT = 150°C 90 -1.5 - 6 mA
c (
CEX
Emitter-Cutoff Current -7 - 1 mA
'ebo
Collector to-Emitter
Sustaining Voltage:
With base open V CE0 (susl 0.1
a
55 V
emitter resistance V CER (susl 0.1
a
60 - V
(fl = toon
BE )
DC Forward-Current h
FE 4 3" 5
Transfer Ratio a
4 0.5 80 200
Collector-to-Emitter V CE (satl 0.5* 0.05* - 1 V

Saturation Voltage 3* 1" 6
Base-to- Emitter Voltage V BE 4 0.5 - 1.7 V
Current Transfer Ratio 4 0.1 0.03 - MHz
'hfe
Cutoff Frequency
Gain-Bandwidth Product: 0.2 BOO - kHz

't
f - 0.4 MHz
Common-Emitter,
Forward Current Transfer h 4 0.1 25 -
fe
Ratio:
f - J kHz
Forward-Bias Second Break-

down Collector Current: 55 525 - mA
's/b
t * 1 -s nonrepetitive
Thermal Resistance:
Junction-tc-Case R 9JC 63 - °c/w
PulMd: Pulw duration = 300 m. duty factor - 1 .8%.
Fig. 5 — Typical transfer characteristics. Fig. 6— Typical input characteristics. Fig. 7 — Typical output characteristics.
318
POWER TRANSISTORS
BFT19, BFT19A, BFT19B

P PN Features:
High-Voltage Silicon RstKN Transistors Maximum safe-area-of-operation curves

For High-Speed Switching and Linear- Amplifier v CBO " -400 v max - (BFT19B); -300 V max. (BFT19A);
Applicationsin Military, Industrial and Commercial Equipment -200 V max. (BFT19)
V CEO ln><) - -350 V max. (BFT19B); -250 V max. (BFT19A);
-150 V max. (BFT19)
RCA-BFT19, BFT19A, and BFT19B are silicon p-n-p tran- Typical applications include high-voltage differential and
sistors with high breakdown voltages, high frequency response, operational amplifiers; high-voltage inverters, and high-voltage,
and fast switching speeds. These transistors differ in their low-current switching and series regulators.
voltage ratings. They are supplied in the JEDEC TO-39
hermetic package.
BFT19A BFT19B

With base open V^go' sus '
-150 -250 -350
With external base-to-emitter resistance (Rfje' = 1 00^ Vqer(sus) -200 -300 -400 92CS-2T5IZ
EMITTER-TO-BASE VOLTAGE V EB0 -5 -5 -5
JEOEC TO-39
COLLECTOR CURRENT (Continuous) I
c
B -0.5 -0.5 -0.5
At case temperatures up to 25° C 5 5 5
At ambient temperatures above 25°C Derate I nearly at 5.7 mW/°C
COLLECTOR-TO-EalTTER VOLTAGE (VCE) =-10 V
TEMPERATURE RANGE: 100

PIN TEMPERATURE
At distance > 1/32
(During Soldering):
in. (0.8 mm) from case for 10 s max
4
• "
ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) » 25°C 1 to
TEST CONDITIONS " so

LIMITS
CHARACTERISTIC SYMBOL VOLTAGE CURRENT BFT19 BFT19A BFT1M UNITS **$<
Vdc mA i- *£ 1
<*i
VCB V CE V EB Min. Max. Min. Max. M4n. Mas. 8" -c»s
j£
-100
'c •e •b
-1O0 - " s »
e
1
With emitter open CBO -200
-300
1 -100
-100
liA
Jj
10
^n \
ebo -5 - -100 - -100 - -100 »A
'-low
-10 -10 20 20 20
DC Forward-Current COLLECTOR CURRENT (l c -
h FE -10 -30 25 25 26
>
JKS-371WI
-10 -50 20 : 20 ; 20 :
Col lector -to- Emitter Sustaining Fig. 1 — Typical dc beta characteristics.
Voltage
With base open v CEO , *u,) -10 -150* -250> -36C v ' 10 V
COLLtCTORTO EMITTER VOLTAGE IVce)
With external base-to-emitter CASE TEMPERATURE (Tc ) 2S"C
V CER {sus) -10 -2TJ0" - -300" - -400" - V
resistance <Rg E >- 100 SI
Base-to-Emitter Saturation Voltage V BE (sat) -30 -3 -1.8 -1.8 -1.8 V

-10 -1 -1
1"
Collector-lo-Emitter Saturation Voltage V CE (sat) V
-30 -3 -2.5 -2.5 -2.6
Common- Emitter, Small-Signal, Short-
Circuit, Forward-Current Transfer h fe -10 -s 26 - - - G
25 26 V
Ratio (at 1 kHz)
i n \
Magnitude of Common -Emitter, Small- L
Signal, Short-Circuit Forward-

Current Transfer
Ratio (at S MHz)
M -10 -30 5 - 5 - 5 -
1
1
n
Common-Base, Short -Circuit, Input

Capacitanct (at 1 MHz)
c ib -5 -,. 76 - 76 - 76 pF i" L
Output Capacitance (at 1 MHz) -10 - 15 - 15 _ pF

=ob 15 \
Second-Breakdown Collector Current:
With base forward biased -100 -SO _ -50 -50 mA
's/b
COLLECTOR CURRENT (Ic) --
Thermal Resistance:
R «JC - 36 - 36 _ 35 °C/W Fig. 2 — Typical gain-bandwidth product.
'CAUTION: The sustaining voltages V ce q(sus) and V CER (sus) MUST NOT be
UU-UW1 Fig. 5 — Typical collector-to-emitter

Fig. 3— Typical input characteristics. Fig. 4 — Typical output characteristics. saturation voltage.
319
POWER TRANSISTORS
BFT19, BFT19A, BFT19B
CASE TEMPERATURE (Tc)" 25 *C PULSE DURATION- JO >.•

REPETITION RATE* 100 Ht
Hill fffl
UN llll lllll iBi
(CURVES MUST BE DERATED LINEARLY W
COLLECTOR SUPPLY VOLTAGE cc >— PO<lllllllllllllln
CASE TEMPERATURE ITc>-25°C jlllllllllllfTTI
WITH INCREASE IN TEMPERATURE.) i c /i b .ioi B| .i,
2
1
1 o.e
i-C MAX. I
(CONTINUOUS): o.«
-IOOO jjj
i
a iixinMiEinil!UHHiHii;;] :^:::K^
;:
{ 0.4
0.2 gt;
^>]jl 7 — Typical turn-on time characteristics.
Fig. 8— Typical storage-time characteristic.
4 6 8 2 4
-IOO -I50 -250
-350
COLLECTOR-TO-EMITTER VOLTAGE (VcE> _
92CS-22544 g PULSE DURATION '30
REPETITION RATEOOOHl
/is
££
|E COLLECTOR SUPPLY VOLTAGE (
Fig. 6 — Maximum operating areas for all types. CASE TEMPERATURE (TC >'2S # C
20 40 GO SO 100 IK)
COLLECTOR CURRENT lie'— «*
ZCf-ITSIS
F/0. 70 — Typical fall-time characteristic.
-1.2 -U -t* -U -1J

UHmaiTTO VOLT AM (V K _ V
)
Fig. 9— Typical transfer characteristics.
320
POWER TRANSISTORS
BFT28, BFT28A, BFT28B, BFT28C,

Features:
High-Voltage Silicon P-N-P Transistors Maximum safe-araa-of-operation curvet
High voltage ratings

For High-Speed Switching and Linear-Amplifier vCBO " -1*0 V "*• (B" 28): -ZOO V max. (BFT28A);
Applications in Military, Industrial and Commercial Equipment -250 V max. (BFT 28 B); -300 V max. (BFT28C)
V CEO (»us) - -100 V max. (BFT 28); -150 V max. (BFT28A);
The RCA-BFT28, BFT28A, BFT28B and BFT28C are tilicon These transistors differ primarily in their voltage ratings. -200 V max. (BFT28B); -250 V max. (BFT28CI
p-n-p transistors with high breakdown voltages, high frequency Typical applications include high-voltage differential and
response, and fast switching speeds. They are supplied in the operational amplifiers; high-voltage inverters; and high-voltage,
low-current switching and series regulators.
JEDEC TO-39 hermetic package.
MAXIMUM RATINGS, Abtolute-Atoximum Valim:

BFT2B BFT2SA BFT2BB BFT2BC
COLLECTOR-TO-BASE VOLTAGE V CB0 -160 -200 -260 -300
With external bese-to.emitter resistance (Rg E )- 100(1 vCEr' u> ' -160 -200 -260 -300
Wth base open V CEO («») -100 -160 -200 -260
EMITTERTO-8ASE VOLTAGE V EB0 92CS-27SIZ
COLLECTOR CURRENT I
c
BASE CURRENT I
B
JEDEC TO-3B
At case temperatures up to 26 C
At case temperatures above 26 C Derate linearly to 200 C
At ambient temperatures up to 60 C
At ambient temperatures above 60 C Derate linearly at
TEMPERATURE RANGE:
LEAD TEMPERATURE (Daring soMering):
At distance > 1/32 in. (0.8 mm) from seating plane for 10 s mex.
ELECTRICAL CHARACTERISTICS, At Cam Tampamtum (Tel - 2S"C

VOLTAGE CURRENT BFT2BA UNITS
CHARACTERISTIC SYMBOL BFT2B BFT288 BFT2SC
Vde mAdc
VC8 VCE Veb •c b Min. Mm. Min. Mm. Mm. Max. Mm. Max.
Collector-Cutoff Current: -50 -1

With emitter open 'CBO -75 -1 Â
-150 -6 -6
Emitter-Cutoff Current J EBO -4 - -100 - -100 - -100 - -100 HA
DC Forward-Current
Transfer Ratio -10 -10* 20 - 20 - 20 - 20 -
"FE
Voltage:
V CE0 (sus) -10 -100* _ -150* _ -200* _ -260* _ V
With base open

V CER (susl -10 -150* - -200* - -260* - -300* - V
resistance (R|jE> * I00O
Base-to-Emitter Saturation Voltage V BE (sat) -30° -3 - -1.5 - -1.6 - -1.6 - -1.5 V
V CE (sat) -10* -1 - -0.6 - -0.6 - -5 - -6 V
Voltage
Transfer Ratio:
f - 1 kHz -10 -5 25 25 25 25
"fe
Small-Signal, Short Circuit
f - S MHz -10 -30 5 5 5 5
h.|
Common-Base, Short-Circuit,
Input Capacitance:
f - 1 MHz Cib -5 .. 75 _ 75 _ 75 _ 75 PF
Output Capacitance:
f • 1 MHz c ob -10 - 15 - 15 - 15 - 15 PF
Forward-Bias, Second-Breakdown
Collector Current:
0.4-s non-repemivs pulse l
S/bb
-80 -62.5 -62.5 -62.5 -62.5 mA
Thermal Resistance:
Junction-to-Case B#jc _ 35 _ 35 _ 35 _ 35 'C/W
•CAUTION: The sustaining voltages V CE0 (sus) and VCER (sus) MUST NOT be measured on a curve tracer.
b|
S/b '» *f'n*d »
the current at which second breakdown occurs at a specified collector voltage.
cPulsed, pulse duration » 300 us; duty factor < 2%.
321
' "
POWER TRANSISTORS
BFT28, BFT28A, BFT28B, BFT28C

PULSE DURATION • JO mi B8H
REPETITION RATE- 100 H> BBS
CASE TEMPERATURE (Tc ) «"25a C COLLECTOR SUPPLV VOLTASE (Vk c )— OOVHHB
fjf
:
fl WWII"""" '""»"ttttHtitW
" "
I
CASE TEMPERATURE |Tc)-29*C
ie'ii-tot.,.1.,
BtW
m
:;'^(max!)|
:
lllHllllll Willi 1 llllllil.PMk^.,0PgPfT'0N ,,^ffffW 1 c
-1000 3
8 EjCONIriNuou. 0..
6 8
i 0.4
4
0.2
' iht i 1 lliNiinTiHilfHJ lirWIIHIIIili

7 20 40 60 ao
COLLECTOR CURRENT (Ic) — mA
too IK)
H t2Cf-2442t
1 lllllE 2—
£
UJ
q:
%
O
-100
8
6
hll'L'li
1
!
1
!
l^^M F/ff. Typical turn-on time characteristic
for all types.
]
PULSE OURATION-JOM
REPETITION RATE -100 Hi
ec
e 4 lliiilililll 1 lllllll 1 1 1 1 llllllll.fs'ft .vi^Tjip ffflKI 1 IIMfHB 2.S JCASE TEMPERATURE ITc)-29*C
i c /: B -'o t B| -i,
2
e -K ii|i|iiiiiiiiiiiiii|iiiiiiiiiiiiiiiimiiininiiiBiiii
i FOR SINGLE NONREPSTmVE^^WIlllllllllllll lllllll IWIIIIIIlll8 f

o .
z pulse l
|
1
llllillllllllllll l\ftl 1111111111

H tj
TV
u:: jH lij!
« ,.5
||Mmvr Fft (MAX.) »-ion v (BFT9B)^-t|U||| 1 1 1
llfWHHHI »;;
:::
¥
:•; ;(1|
-10 t l if
8: 1 I 1
1^ V CE0 (MAX.)'-ISOV (
BFT28A)-fflfflftfff
ttrTrttsat
I I
6 |^ v CE0 (MAX.)- -200V (BFT2eB)-||||||| |||ffl||IITIIlllllllllllllll^^^ 0.9

::!f :rr
ISH p)j}||||HIIHP}p
affl^^P'i
:;.! iiit
^^Hv
j 11 1 || 1 1
ijgujHjg
4 =
^^WMWIIIIllllllllllllllHII
CE0 (MAX-)<-250V
1
(BFT28C)-||||||||||||||||||||||||||||||||^^^
IIIIIIMIHIIIIIMIIIIIIIIIIIHIIlllllllllllllllllllllllllllllllllllllllllll^ 20 40 <0 SO 100 no
m
2 4 681 2 4 6 8 t II 4 6
COLLECTOR CURRENT lie) — mA
1 1 8 t2CS-24628
-100 -190-2001
-250 Fig. 3— Typical storage-time characteristic
COLLECTOR-TO-EMITTER VOLTAGE (VCE ) —V 92CS-24 599 for all types.
Fig. 1 — Maximum safe operating areas.
COLLtCTORTO-EIMTTER VOLTAGE (Vcf ) 10 collector-to-eutter voltage ivci) io V

. 100
M
I" •$
^^
i" I" ^
\>
tm | » 1
y * J
\ 90 £,
1 "
1 *
*^ '< k
1
* j Vi ^^ j£ J
1^
,
a
" \ i"
\ N \
\\
'
'-loOD
io 40 w to no ira
collector current - aA COLLECTOR CURRENT del— «A

(lc>
collector current (it), .a 0S-UIM1 MCS-244IT
tontm
Fig. 4 - Typical gain-bandwidth product for Fig. 5— Typical dc beta characteristics Fig. 6— Typical fall-time characteristic
all types. for all types. for all types.
-0.2 .0.4 -0.4 -0.0
SASETO-EUTTER VOLTAGE <V

K ) -V
Fig. 7 — Typical transfer characteristics for Fig. 8— Typical output characteristics for Fig. 9— Typical collector-to-emitter
all types. all types. saturation voltage for all types.
322
POWER TRANSISTORS
BU106
Features:
Epitaxial-Base Silicon N-P-N Transistor Maximum ufe-area-of-operation

curves
High voltage ratings

For Horizontal Deflection for Small-Screen
High dissipation rating
Black-and-White TV
BU106 a silicon n-p-n transistor with a pi-nu epitaxial- This transistor is supplied in the JEDEC TO-3 hermetic
is
layer construction. This device is supplied in a JEDEC package.
TO-3 hermetic package. The BU106 is primarily intended
for use in horizontal-deflection output stages in small-screen

black-and-white television receivers.
COLLECTOR-TO-BASE VOLTAGE VcBO

With base open VcEO<s us * 140
With base reverse-biased (Vbe) between -2 V~8V VcEV<s us > 325
EMITTER-TO-BASE VOLTAGE VeBO

CONTINUOUS COLLECTOR CURRENT IC

CONTINUOUS BASE CURRENT IB
At case temperatures up to 25°C and VcE up to 40 V 75 W
At case temperatures up to 25°C and VcE ab°ve 40 v See Fig.
100
At case temperatures above 25°C Derate linearly to 200°
TEMPERATURE RANGE:
Storage and Operating (Junction) -65 to +200 °C
J.

At distances> 1/32 in (0.8 mm) from seating plane for 10 s max. 230 °C o CASE-TEMPERATURE
CHANGE (A c )*S0*C
ELECTRICAL CHARACTERISTICS, At Case Temptratum (TqI ' 2S°C Unlets Otherwise Specified \>
TEST CONDITIONS LIMITS 8
C 2 1
VOLTAGE CURRENT BU10S * N
CHARACTERISTIC SYMBOL UNITS O
Vdc Adc
MAX.
\
VCE v EB vbe 'C 'B e MIN.
ISO V7S c
Collector Cutoff Currant: 100 - 2

10 \l\l
'CEO e e a
With base open
With base-emitter UCS-ISS2S
325 -1.6 - 2 mA
junction reverse-
Fig. 1 — Thermal-cycling rating chart.
biased
>CEV COLLECTOR-TO-EMITTER VOLTAGE IV CE I'5V
With base-emitter
junction reverse-
biased and Tq « 100°C
325 -1.6 - 5
90 !
I
ML
'
^ •• I
Emitter-Cutoff Current >EBO 8 - 10 mA

_75 '
Collector-to-Emitter Sustain-
\
'
>"
ing Voltage (See so
Figs. 4 and 5)
5i /[
0.1* 140 °i
With base open VcEO* 8"**
V CASE TEMPERA TURE T C ).25 •c (
With base-emitter junction -2 325 -

V C EV(»»> 0.06*
reverse-biased !|- ;
I
^
Emitter-to-Base Voltage VEBO 0.01 8 - V v\
15
DC Forward-Current
4* 8 -
"FE S
Transfer Ratio I I
i s
Base-to-Emitter -
V B E<»t> 4" 0.5 1.5 V COLLECTOR CURRENT (
c )—
Saturation Voltage
Collector-to-Emitter - V
Saturation Voltage
V CE (satl 4» 0.5 5
Fig. 2 — Typical dc beta characteristics.
CASE TCM PERATU RE tT c l«25»C
Emitter, Smell-Signal, 1
llll |l|l||[
Short-Circuit,
- 1 MHz)
Forward
M 10 0.2 3 "
I
5
(f
Common Base 1 FIT^ntF*'^(tTtTr

Output Capacitance C b V C B=10 150 " pF
1
lllltllttttllHIIU-T/mim
(f - 1 MHz) TttiTHtirftrfrHî^B
Forward-Bias Second Break-
down Collector Current 40 1.85 " A |?
•s/b
(1-s non-repetitive pulse)
Switching Time:
Storage <V CC » 40 VI 4 0.5* - 3 nitnliilnHlfflittilOîiJ
S «s
- 1.5
1 1
MUtfttfttin i WHHEum
Turn-off (V CC - 40 V)l •OFF 2 0.1
Thermal Resistance
n fljC -
Wm
Junction-to-Case . 10 5 2.34 °C/W COLLECTOR CURRENT —A
c lei "
* Pulsed; pulse duration < 350 m. Duty factor • 2%. 'B2" v*' u,,n<>wn -
b CAUTION: The sustaining voltages Vceo'""'. ••*• VqevIsus), d Turn-off is measured when Vce has reached a value of 2 V and lc Fig. 3— Typical saturation voltage characteristics.
J to 100 mA.
323
T
POWER TRANSISTORS
BU106
6 8 * 2 4 6 8' 2
10 I00 1 000
COLLECTOR-TO-EMITTER VOLTAGE (VCE )-V
92CS-22793
CASE TEMPERATURE (
c I 25' C
COLLECTOR-TO-EMITTER VOLTAGE [V& • 5 V t
*
I-
^
S1
:
1 1 1 I \K I W I
BASE-TO- EMITTER VOLTAGE (Vg^—V COLLECTOR-TO-EMITTER VOLTAGE (V^l—V
Fig. S— Typical transfer characteristics. Fig. 6— Typical output characteristics.
324
POWER TRANSISTORS
BU126, BU133
High-Voltage, Power-Switching Silicon N-P-N Transistors

Features:
TV Colour/Monochrome Receiver Power
Fast switching speed
Supplies -90° and 110° Deflection Angles Hermetic steel package —
JEDEC TO-3
The RCA-BU126 and BU133 are silicon
epitaxial-collector n-p-n power switching
transistors intended for use in switched-
mode power supplies of 90° and 110°
colour and black-and-white TV receivers.
These devices are hermetically sealed in a

steel JEDEC TO-3 package.

BU126 BU133
V CES 750 750
V CEV
V BE = -1.5V 750 7
V CE0 (»us) 300 2
v EBO 6
'C • 3
'CM 6
'B 2
PT
Up 25°Cto 80 1
Above 25°C Derate linearly to 200°C

Tj. T stg 65 to 200
TL
At distances
^ 1/32
^ in. (0.8 mm) from seating plane for 10 s max. 235
I0O0
COLLECT0R-TO- EMITTER VOLTAGE (V CE )-V MC s-2775B
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) 25°C Unless Otherwise Specified Fig. 1 - Maximum operating areas for BUI 26, BUI 33.
VOLTAGE CURRENT BU126 BU133 UNITS
SYMBOL V dc A dc
VC E VBE 'c <B
Min. Max. Min. Max.
750 - 500 - 500 HA
(
CES
Tc - 125°C 750 - 2 - 2 mA c
'ebo
5
-6
la
-
15
5
60
-
15
5
80
mA
'\ (FLANGE)
«FE
300" - 250" - V
V CE0 (sus)
^
0.1"
V BE (sat) 4» 1
- 1.5 - 1.5 V <9 )
V CE (sat)
40
2.5
a
4"
0.25
1
-
2
10
5
_
2
10
-
5
V
V BOTTOM VIEW
B <L^^
'S/b
t = 1 s nonrep. 200 50 _ 50 mA
MHz
JEDEC TO-3
10 0.2 3.5 typ. 3.5 typ.
<T
«s
c
V CC = 50V 2.5 0.25 1 .5 typ. 2.4 1 .5 typ. 2.4 MS
V cc = 50V d 2.5 0.25 c

0.5 typ. 0.9 0.5 typ. 0.9 MS
- 2.18 - 2.18 °C/W
Rejc
* Pulsed: pulse duration = 300 m. rep. rate = 50 Hz, duty factor = 2%
b
CAUTION: The sustaining voltage Vj;eo' sus ' M UST NOT be measured on a curve tracer.
C
'bi = 'b 2
Fall- time characteristics measured in a typical switched-mode power supply show an average value of 0.16>«-
325
A
POWER TRANSISTORS
BU207, BU208, BU208A
High-Voltage, High-Current Silicon N-P-N Features:

— Clip
Power-Switching Transistors Al-Ti-Ni Metalization
Ion Implantation for Stringent Control of
Construction
Diffusion and Electrical Parameters

For Horizontal-Deflection Circuit Hard Glass-Passivation
Application in TV Receivers Fast Switching Speeds
Low Saturation Voltages
Wide Safe-Area-of-Operation
The RCA BU207, BU208 and BU208A are They are intended for horizontal-deflection
silicon n-p-n power switching transistors.
Low Thermal Resistance
circuit application in black and white and
These types utilize a trimetal metallization- color television receivers, and for other
process to achieve a balanced-current dis- applications where a combination of high- TERMINAL DESIGNATIONS
tribution throughout the chip. current handling capability, ruggedness, and
fast-switching speeds are required.
BU207 BU208 BU208A

VqES 1300 1500 1500 V
V CE0 (sus) 600 700 700 V
VEBO _ 5 V JEDEC TO-204MA
«C _ 5 A
'cm _ 7.5 A
•bm — 4 A _
I00
8
COLLECTOR -TO -EMITTER VOLTAGE VfT
CASE TEMPERATURE (TC ).25"C
5V
_I BM -3.5 A u! 6
PT O 4
•£
Tc upto95°C . 12.5 W <r

u 2 ^,.
Tq above 95°C, Derate Linearly 0.625 W/°C V
1
T stg< T J
*T L
-65 to 115 °C f in
\\
\
At distance > 1/16 in. (1.39 mm) from seating plane I : _...
v
for 10 s max 230 \
8
! € 8 4 «
0. >l 11 in
COLLECTOR CURRENT (I c )— A
Fig. 2— Typical dc beta characteristic as a function

of collector current.
COLLECTOR CURRENT (!<;)— 92CS-30179
Fig. 3— Typical collector-to-emitter saturation

voltage as a function of collector current.
Fig. 1 — Maximum operating areas for all types

(Tc = 95° C).
326
A
POWER TRANSISTORS
BU207, BU208, BU208A
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) =25°C unless otherwise specified

CHARAC- VOLTAGE CURRENT BU208A
BU207 BU208
TERISTIC Vdc Adc UNITS
VC E VB E 'c b Min. Max. Min. Max. Min. Max.
1300 - 1
- -
'CES 1500 1 1
mA
4 - 0.5 - 0.5 - 0.5
'ebo
V CE0 (sus) 0.1b 600» - 700" - 700» - COLLECTOR CURRENT Uc>—
V
v EBO 0.1 5 - ^•6 - 5 - Fig. 4— Typical base-to-emitter saturation voltage as
a function of collector current.
h FE 5 4.5b 2.25 - 2.25 - 2.5 -
V BE (sat) 4.5b 2 0.9C 1.5 0.9C 1.5 0.9C 1.5

V
V CE (sat) 4.5b 2 1.5C 5 1.5C 5 - 1
*T 5 0.1 1 (Typ.) 1 (Typ.) 1 (Typ.) MHz
c ob 1
ra* 160 (Typ.) 160 (Typ.) 160 (Typ.) pF
4.5 1.8 lO^Typ.) 10 (Typ.) 10 (Typ.)

h jus
4.5 1.8 0.6 (Typ.) 0.6 (Typ.) 0.6 (Typ.)

»f
'
R 0JC 1.6 - 1.6 - 1.6 °C/W
a CAUTION: The sustaining voltage Vq^q(sus) b Pulsed; pulse duration = 300 jiS, duty factor <2V
MUST NOT be measured on a curve tracer. c Typical value
Vpcq(sus) should be measured by a pulse
dV CB CURRENT ««,)— A
"ON" BASE (DRIVE)
method with the test conditions
Fig. 5 — Guide for optimizing "drive" conditions at
c 100 mA, L 25 »xH, lg 0.
l = = =
3.5A in test circuit. Fig. 1. See also Guide
for Optimizing 'ON' and 'OFF' Base (Drive)
Current Conditions p.4.
Guide for Optimizing "ON" and "OFF"

Base (Drive) Current Conditions
excess carriers in the collector region while
Two very important conditions, both of
current in the base region is still flowing.
which must be satisfied, provide the key to
reliable and efficient operation of a hori- The proper value for Lg can easily be
zontal-deflection circuit. The first condition determined from Figure 6 and 7 after
complete collector saturation. This is Ipm. and transistor dc beta range at
is I
By 'CM
accomplished by supplying sufficient "on" maximum collector, hp E have been es- ,
base (drive) current, lg , to assure total tablished. Care should be taken to assure
saturation of the lowest-gain devices at end that the combination of a low lg and high
of scan current, \q^, and yet not over-driving Lg does not cause the transistor to pull out
higher-gain devices. Component tolerances of saturation before the unit is completely
must also be taken into account while turned off causing dynamic saturation losses
selecting lg or that a high lg and a low Lg does not
'ON' BASE (DRIVC) CURRENT (Is,)— A
.
na-mn
cause high dissipation due to collector cur- Fig. 6— Guide for optimizing "drive" conditions at
The second condition and possibly the most 4.5A in test circuit. Fig. 1. See also "Guide
rent turn-off "tailing".
important is the removal of excessive carriers for Optimizing 'ON' and 'OFF' Base (Drive)
Figures 5 and 6 show that, once Iqm has been
in the high-resistivity collector region at \qm Current Conditions'.'
to eliminate dissipation from collector current established, a value for Lg and lg. can be
fall-time "tailing". This is accomplished by selected, that will result in low dissipation
amount of series base and reliable operation for various ranges of
selecting the proper
inductance, Lg, to slow down the decay of hp E /lg 1 Once lg
. has been selected,
reverse-base current, sometimes referred to figure 10 may be used as a guide to determine

as dig^/dt, inherent in low-impedance cir- the proper dig./dt value over a range of
cuits. Tnis enables complete recombination of collector current.
327
POWER TRANSISTORS.
BU207, BU208, BU208A
RATE-0F-CHAN6E OF "OFF" BASE (ORIVEICURRENTMBj/tft)— Aija RATE-OF-CHANGE OF "OFF" BASE (DRIVE) CURRENTIdigj/dt)— A/*t
Fig. 7 — Typical fall time and storage Fig. 9— Typical "off" base and "on" base (drive)
time charac- Fig. 8— Typical fall time and storage time charac- current as a function of collector current.
a function of "off" base
teristics as
teristics as a function of "off" base See also "Guide for Optimizing 'ON' and
(drive) current II = 3.5A).
c (drive) current (Iq" 4. 5A). 'OFF' Base (Drive) Current Conditions'.'
328
— A
POWER TRANSISTORS
BUX16, BUX16A, BUX16B, BUX16C

Features:
High-Voltage, High-Power Silicon N-P-N High voltage ratings: V CER lsus) up to 400 V, R BE <50U
Power Transistors V CEQ (sus) up to 350 V

High power dissipation rating: PT - 100 W at V CE • 135 V, Tc
For Switching and Linear Applications in For switching applications where circuit values and operating
Industrial, and Commercial Equipment conditions require a transistor with a high second
breakdown rating (ls/ D ) (limit line begins at 135 V)
The RCA BUX16-series devices are multiple epitaxial silicon The high breakdown-voltage ratings and exceptional second- Maximum area-of -operation curves for dc and pulse operation
n-p-n power transistors employing a new overlay construction breakdown capabilities of these transistors make them especially
with several emitter sites. All devices employ the popular suitable for use in series regulators, power amplifiers, inverters,
JEDEC TO-3 package; they differ in breakdown-voltage, deflection circuits, switching regulators, and high-voltage
leakage-current, and current-gain values. bridge amplifiers. TERMINAL DESIGNATIONS
BUX1S BUX1BA BUX16B BUX16C
COLLECTOR-TO-BASE VOLTAGE V c80 260 326 375 426 V
With base reverse-biased (V BE - -1.5 V ) V CEV 250 325 375 426 V
With external bata-to-amitter resistance <R
BE ) <50 (1 V CER |!U,) 22s 3°° 36° *°° v
With base open
EMITTER-TO-BASE VOLTAGE
V CE0 (sui)
V EB0
200
6
5
260
6
5
300
6
5
360
6V
5
V
A
I
c
B 2 2 2 2 A
At case temperatures up to 25°C and V CE upto 136 V 100 100 100 100 W
At case temperatures up to 25 C and V CE above 1 36 V See Fig. 1 -
At case temperatures above 25 C Derate linearly lo 200°C
TEMPERATURE RANGE:
Storage and operating (Junction) —66 To 200 C
At distance >1/32 in. (0.8 mm) from seating plane for 10$ max. Tp 230 C
COU£CTOR-TO-EWTTUVOt.TA6e!V(X>-IOV I I
Tj
I" |
i
S 30 | i ^ ^5^
11^
10
### SINGLE CASE TEMPERATURE (Tc)*25*C
8 PULSE OPERATION FOR
tfffft
6 jfrffif
NONREPETITIVE
PULSE rOO.ay
1
$[
<& f&^
/yi<"
£ 20
i NWMALizEb^W
4 1 power Wmm I
2
|W| gg«|f|| mi | 10
I C MAX. fflffi^^VHBffli COLLECTOR CURRENT(Ic>-»

< (CONTINUOUS) fffrttMa. TtF
1
o
H
—
r-
'
6
WKM nn-illl
72 :
1 llll 11
)I1IIHI1I|I
II
111!
1 1
II
11b
II
p
Fig. 2 — Typical dc beta
for all types.
vs. collector current
92LS-1MS
Z -'gllllllllllll lllll III IIB

uJ *
a. *
or ^mmjis/b- iTi'iitlllllllllllllllll 1 IIP
3
U tTTTfiMK'MTTE ElWsaWH JJOTITilt HB
s
t-
*
^Hf f§
o
u
-1
COLLECTOR-TO-CMITTER V0LT*OC(«ec)-K> V
O 0.1 UK TEMPERATURE (Tel- 29* C
° VCEO MAX. • 200 v'MUji
6
(BUX 16) llllllllll
6
S^rtt VCEO MAX.'250vlliillMI
4
MS ffy
x '**>,,,, «§ I
i »
Vrtrn MAX.- 300 Vrjii * 12
(BUX I6B) WHM § 10

2 VcEO MAX. • 350 V * 8
(BUXI6C)
s
i
0.01
• 4
' "
10' Kr
—V i.
COLLECTOR- TO- EMITTER VOLTAGE (VCE >
92CS- 24283 1 8 • * •
Fig- 3— Typical gain-bandwidth product vs.
collector current for all types.
329
POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, At Cut Ttmptntun (Tc) - 2S°C unlm othfwtm tptcifltd

SYMBOL BUX16 BUX1SA BUX16B BUX16C UNITS
Vdc Adc
VC E VBE 'C •b Min. Mix. Mln. Max. Mln. Max. Mln. Max.
250 -1.5 5 ~
325 -1.5 - - - - 6
With bate reverie-biased 'CEV 375 -1.5 - 2
425 2
With bate reverse-biased
TC -1S0°C 'CEV 250 -1.5 _ _ _ 8 _ 8 3 3
mA
With base open
'CEO 175 - - - 5 - 2 - -
250 5 2
Emitter Cutoff Current:
V EB -5V 'EBO
- - - - 5 - 6 - 2 - mA
2
Sustaining Voltage*
With base open V CE0 (sus) 0.2 200 250 300 350 V
emitter resistance
<R BE K50fi V CER (sus) . 0.2 225 300 350 400
Emitter-to-Base Voltage
VEBO - - 0.02 6 - 6 _ 6 - 6 - V
10 0.4 b - 15 130 15 130 15 130 15 130
h FE 10 - 2^ 15 15 12 12
Ratio
10 4.5» 5 5 5 5
Base-to- Emitter Voltage V BE 10 - 2b - - 3 - 3 _ _
3 3 V
Collector-to-Emitter - - 2° 0.25 2.5 - 2.5 - -
2.5 2.5
Seturation Voltage V CE (sat) 4.5" 1.125 _ 5 5 5
V
5
«T 10 - 0.2 - 5 - 5 - 5 - 5 - MHz
Short-Circuit, Forward- |hfe| 10 — 0.2 - 5 - 5 - 5 - -
5
Current Transfer Ratio'
(at 1 MHz)
Common-Emitter, Smaii-
Ratio (at 1 kHz) 10 4 20 20 20
"f. 20
Output Capacitance
(at 1 MHz):
Vcb-IOV, l
E
-0 cobo 150 150 150 150 pF
Second- Breakdown Collector
Current'*:
(With bate forward-biased)

Pulse duration
(nonrepetltive) -1s 's/b 136 0.75 0.76 0.75 0.75 A
Second-Breakdown Energy*:
(With bate reverse-biased)
L-160uH,R BE -H>n E S/b -4 » 1.2 1.2 1.2 1.2 mJ
Thermal Resistance:
Junction-to-case R «JC - - - _ _ 1.76 _ 1.75 _ 1.75 _ 1.75 °C/W
CAUTION: Sustaining voltegM V c60 Um> end V CER («ii) MUST NOT be measured on • curve tracer
* Pulsed, pulse duration < 360 mi. duty factor - 2%.

* Meeiured et • frequency where |h t li decraeilng at approximately 6 dB per octave.
J
* l it defined it the current at which second breakdown occun et a specified collector voltage with the •mitter-beie
s/b
(unction forward Mated for tramiitor operation In the active region.
a E s/t '• defined es the energy et which second crackdown occurs under specified reverie bin connection!,
E S/b " * LI J where L ii c teriei loed or leekegt induetenee, end it the peek collector current.
I
330
V A
POWER TRANSISTORS

426 CASE TEMPERATURE (Tcl-25'C
|
400
380
^J -
<z 560 - v c ;r tiutl

-
S> 340
K '
320 ^fV ._ «CEO<"»>
Si"° "*^&f
o> 2eo
26 °
gs
5 J 240
«f
I* 220
6 8 * -3 * B
2 lft
EXTERNAL BASE-TO-EMITTER RESISTANCE (RBE>— <>

BASE-TO-EMITTER VOLTAGE <VBE ) —
Fig. 4 — Typical output characteristics Fig. 5 — Typical transfer characteristics Fig. 6— Sustaining voltage vs base-to-
for all types. for all types. emitter resistance for all types.
CASE TEMPERATURE (T c l . 25* C
BASE SERIES RESISTANCE (R B l-IOO

s
~:'
l;; <
-~ : :
.. .':
\l\' ill;
" 4 S
= :': :
ih .:
3 K
•;;
•:•'
2 o
:T
=
-:.
iii: ;;::
BASE SERIES RESISTANCE (R B I

-
BASE SUPPLY V0LTA6E (Vggl —V
92LS-I9CI
Fig. 7 — Typical reverse-bias, second- Fig. 8 — Typical reverse-bias, second- Fig. 9— Typical reverse-bias, second-
breakdown characteristic breakdown characteristic breakdown characteristic
for all types. for all types. for all types.
REPETITION RATE- 500 PULSES/I

COLLECTOR SUPPLY VOLTAGE (Vfcc>'SO V
CASE TEMPERATURE (Tc) 25' C
'* t. (T YP>
r
**
i
s
i
/
i
ae /
f
• (TYR)
J
s r ^
i 0.4
s
i 0.2
2 2.5 3 3.5 4
COLLECTOR CURRENT (I c > —A COLLECTOR CURRENT (Icl— Mis-nun
Fig. 11 — Saturated switching times (turn-

Fig. 10 — Saturated switching time (storage) on and fall) vs. collector current
vs. collector current for all types. for all types.
331
POWER TRANSISTORS
Silicon N-P-N Switching Transistors Features:

For Switching Applications in Industrial and Commercial Equipment
VCBO -260V(BUX17)
- 360 V IBUX17A)
The RCA-BUX17. BUX17A, BUX17B, and BUX17C -400V(BUX17BI
are The exceptional second-breakdown capabilities and
multiple epitaxial silicon n-p-n power transistors
high - 450 V (BUX17C>
utilizing a voltage-breakdown ratings make these transistors especially
multiple-emitter-site structure. Multiple-epitaxial construction
suitable for off-line inverters, switching regulators, motor High dissipation rating: P - 150
T W
maximizes the volt-ampere characteristic of the device and controls, and deflection-circuit applications. Low saturation voltages
provides fast switching speeds. Multiple-emitter-site design
The high breakdown voltages, low saturation voltages, and Maximum safe-area-of-oparation curves
assures uniform current flow throughout the structure,
which
fast-switching capability of these devices make them especially
produces a high ls/b and a large safe-operation area.
suitable for inverter circuits operating directly off the rectified
These devices use the popular JEDEC TO-3 package; they
1 1S-V power line or in a bridge configuration operating from
mainly in voltage ratings and leakage-current limits.
differ
the rectified 220-V line.
MAXIMUM RATINGS, Absolute-Maximum Values: BUX17 BUX17A BUX17B BUX17C

COLLECTOR-TO-BASE VOLTAGE Vc B ° 250 350 400 450
MAthbueopen V CE0 (.u.) 150 250 300 360
With reverse bin (V - V
BE ) (with best-emitter shorted) V CEX (su«> 250 360 400 450
Wth external n
BE )< 50
bett-to-emitter resistance (R V CER I,U, I 175 275 325 375
EMITTER-TO-BASE VOLTAGE V E B°
COLLECTOR CURRENT:
Continuous i
'c
»* I
CM
TRANSISTOR DISSIPATION: p
At ease temperatures up to 25°C end VCE up to 30 V
At cmtemperatures up to 26°C and V CE above 30 V
At cats temperatures above 26°Cj.
Derate linearly to 200 C
TEMPERATURE RANGE:
Storage • Operating (Junction)
-66 to +200
At distances > 1/32 in. (0.8 mm) from case for 10 s max
•
*
I
§ 100 &>
^<<»*v
1 • *
N.V
S
fe « i r>^
X
\
w
*•
2
r- 2
10 IT « l(
'Kt
Fig. 2 — Thermal-cycling rating chart for all types.
IV CE 1 3V
u 12
i-s,
" j? 10
1-
5o 25»C oo
*i a
2" "1 1
120 |S
Ok
* -CASE TEMP RA U IE
90 "-S!
°S (TC ) 25 "C
S«
Oz
aie «0 2f
3
« 30"-
i
:
I I |4 6 8
10 100 190 2501390 H COLLECTOR CURRENT H c ) —A
COLLECTOR-TO-EMITTER VOLTAGE (VcE>'V *°°
92CS-24633
Fig. 3— Typical normalized dc beta characteristics
Fig. 1 — Maximum operating areas for all types. for all types.
332
POWER TRANSISTORS

- 2$°C unltu otharwiu sptcifitd
ELECTRICAL CHARACTERISTICS, At Cu» Tempantun ITC)
/OLTAGE CURRENT BUX17 BUX17A BUX17B BUX17C UNITS

CHARACTERISTIC SYMBOL Vdc Adc
Min. Maw. Mm. Max Mm. Max. Mm. Mm.
"CE 'BE 'c >B
175 10
275 10
With external base-to-emitter 'CER - - -
325 - 10
resistance (Rgg) * 50 n 10
375
250 -1.5 10
350 -1.5 - - 10 mA
'CEV - 5 -
reverse-biased 400 -1.5
450 -1.5 6
250 20
350 -1.5 20 -
AtT c =12S°C 400 -1.5 - - - 10
450 -1.5 10
Emitter Cutoff Current -6 - 2 - 2 - 2 - 2 mA
<EBO
3 4« 20 20 IS ~ 15
- - 7 7 -
DC Forward-Current Transfer Ratio 3 8
"FE
3 10* 7 7
Voltage V
isd° 250b 300b . 360* _
With base open V CE0 (sus) 0.2»
With external base-to-emitter 0.2* 175 b - 275b - 325* - 375* -

V CER (sus)
resistance (R|je' = 50 n
3 8* ' 3.5 ~ 3.5 V
Base-to- Emitter Voltage VBE _ 4 _
3 10" 4
8» - - - 2 - 2
1.5 V
Base to Emitter Saturation Voltage v BE (sat) 3 3
10* 2
8" - 3 — 3
V CE (sat)
1.5 V
Collector-to-Emitter Saturation Voltage
10" 2 _ 2 _ 2
10 2.5 8 2.5 8 2 8 2.5 8
f = 1 MHz l
h fe| 1
Forward-bias Second Breakdown

Collector Current:
6 6 _ 6 _ 6 _ A
t = 1 s, nonrepetitive 's/b
25
Second- Breakdown Energy:

With base reverse-biased, and
-4 . 2 _ 2 _ 2 _ mJ
R BE = 50£2, L=40uH E S/b 10 2
Saturated Switching Time (Vfx=

200 V, B1 = B2 ):l l
-
+ 8 1.5 - - - 2 2
Turn-on (tj t
r l
10 2 2 2
«ON H*
8 1.5
- 3.S 3.5
Storage
10 2 _ 3.5 3.5 _ -
«s
Fall 8 1.5 - 1 - 1
10 2 - 1 - 1
«f
Thermal Resistance:
R 9JC - 1.17 - 1.17 - 1.17 " 1.17 *C/W
Junction-to-Case
Pulsed; pulse duration < 350 us. duty factor - 2%.

••CAUTION: The sustaining voltages Vc E o(sus) and VcerI""'
333
"
POWER TRANSISTORS

COLLECTOR-TO-EMITTER VOLTAGE ( "cEl-av^^ffi
loffffiiiiiiiiiii^miiiiiiiiiiiii
« »HIIIH III -J
- *H lill/H
3 It
P JNt."
g 'HlJMhll^fi 3 ft
TIME OR PULSE DURATION

I
BASE-TO- EMITTER VOLTAGE <V 8E ) —V 9 2C S-I94?!
COLLECTOR-TO-EMITTER VOLTAGE IV I —
CE
Fig. 4 - Typical thermal response characteristics 5 — Typical
Fig. transfer characteristics for Fig. 6 - Typical output characteristics for
for all types. all types. all types.
COLLECTOR CURRENT (I c > A 10 12

COLLECTOR CURRENT I Ic ) A
92CS-24C20 COLLECTOR CURRENT (Ic) A
92CS-24622
Fig. 7- Typical base-to-emitter saturation-voltage Fig. 8- Typical collector-to-emitter saturation- Fig. 9 - Typical rise-time characteristics for
characteristics for all types. voltage characteristics for all types. all types.
PULSE OURATION • 20 ,1
REPETITION RATE-SOO Hi
COLLECTOR SUPPLY VOLTAGE <VCC>'200 V
CASE TEMPERATURE (T C )'25«C
IC'lB. 5,Buxir'*>
3 4 5 G 7 « 9 10 II 12
COLLECTOR CURRENT A COLLECTOR CURRENT (I c ) —A
Fig. 11 — Typical storage-time characteristics
Fig. 10 - Typical fall-time characteristic Fig. 12 — Typical inductive- and resistive-load for all types (with constant
for all types. fall-time characteristics for all types.
forced gain).
334.
V V — >
POWER TRANSISTORS
High-Voltage, High-Current Silicon N-P-N

Features:
Power-Switching Transistors Fast switching speed
For Off-Line Switching Applications Hermetic steel package-JEDEC TO-3

The RCA-BUX18, BUX18A, BUX18B, current-handling capability, ruggedness,

and BUX18C are epitaxial silicon n-p-n and fast switching speed is required. The
power-switching transistors with pi-nu devices are hermetically sealed in a steel
construction. They are intended for use in JEDEC TO-3 package, and differ from
off-line power supplies and for other appli- each other in collector voltage ratings,
cations in which a combination of high-

BOTTOM VIEW
BUX18 BUX18A BUX18B BUX18C
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGES:
With reverse bias. V BE «- 1.5 V V CEV (susl 300 460 600 750
With external base-to-emitter resistance IR BE - 100f2> V CER lsusl 250 325 375 425 V
With base open V CEO lsusl 200 275 325 375 V
V EB0
I
I
c
CM
6
8
12
6
8
12
6
8
12
6
8
12
V
A
A
,0. — —
Icl^liaSrW
1 1 l-l *-,%$—(--
^w~
A
PEAK BASE CURRENT
I
I
B
BM
2
3
2
3
2
3
2
3
% J
'
TRANSISTOR DISSIPATION: PT < CASE TEMPERATURE L
At case temperatures up to 25°C 120 120 120 120 W I

ITr ) 2B'C y-
£-
1
At case temperatures above 2S°C Derate linearly at 0.68 W/ 01-

~
TEMPERATURE RANGE:
Storage and Operating (Junction! -65 to +200 C 5 '

• -
/V"6
LEAD TEMPERATURE (During Soldering!:
Atdistances>1/32in. (0.8 mm! from case lor 10 s max. .. .
235 °C
io.,-
^
.' VCE0<MAX.) .275V(BUXI8»)
i ~~ CE0 (MAX.) .32SVIBUXI8B) 1 N
— CE0 (MAX.) -JTSVIBUXISC
0.01 1 1 1 1 1 1
'II
*
CE >— V
Fig. 2 — Maximum operating areas for all

types at 25° C and 100° C.
100
"
*
•
1
v^7
*
O
4 S
8
\^
\
Ssv
| _ xv„
\
5 1 \
h
1 10
t\
cS.
\ ! : -
Fig. 3 — Thermal-cycling rating chart for all

types.
COLLECTOR-TO-EMITTER VOLTAGE (V CE I'3V
I2S*C
_.. V. *>
C»SE TE IPE RATURI

~2S*C
IT C I -4 O'C
— s
•-
10
h^ * s,
^0 \
I0 I00 - ">
i\
>
COLLECTOR-TO-EMITTER VOLTAGE (V CE ) —
i
92CS-27752 8 z
COLLECTOR CURRENT (I c ) —A
Fig. 4- Typical dc beta characteristic for all

types.
335
POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, /U Cm Ttmptntun ITc> • 2B°C unltu otherwlte tptcifltd.

V de BUX1S BUX1SA BUX18B BUX18C UNITS
A de
VCE vbe 'c >B Min. Mix. Min. Max. Min. Mix. Min. Max.
'CER 200 _ 3
resistance (Reg) 10011 275 _ _ _ 3 _ _ _ _
325 - - _ - - 3 _ _
400 3
With base-to-emitter junction 300 -1.5 _ 0.5
reverse- biased
With base-to-emitter junction

'CEV
450
600
750
300
-1.5
-1.5
-1.5
-1.5
-
_
-
10
-
0.5
- 0.5 -
0.5
mA
•*^S "'•*-' «§§•
:::::::-:::::Hi::»2K2UiH:3
ivjr.' .::::::::::::::::::::»!
reverse-biased, _ _ _ _ _ _ _ r.%-i::5: : ::::::::::i:::!::::!

450 -1.5 10
and T c = 100°C 600 -1.5 - - - - - 10 -
750 -1.5 10
'ebo -6 - 3 - 3 - 3 - 3 mA %tliiiiiiiiil
Emitter Cutoff Voltage
Vebo 0003 6 - 6 - 6 - 6 - V ::::::::::::::::
4* - - - - - MC-TO-EXITrOt SATUMTION VOLTMX
DC Forward-Current
3
5*
10 10 [v K (M«]— V
3 7
Transfer Ratio 3 6* - - _ _ _ _
5 1'
7
Fig. 5— Typical collector-to-emitter satura-
15 100 16 100 15 100 16 100
Collectorto-Emitter
tion-voltage characteristics for all
Sustaining Voltage: V CE0 (sus) 0.2 200* 275" - 325" - 375" - types.
With base open
V
With external base-to emitter
=
V CER (susl 0.2 250" 325" - 375" 425 b -
resistance (Rbe' 100O
Forward-Biased Second- Break-
down Collector Current:
38 3.16 3.16 - 3.16 3.16 -
'S/b
200 0.'1 - 0.1 0.1 - A
= 0.1
t 1 s, nonrepetitive
Base-to-Emitter 6' 1.2 _ 25

Saturation Voltage V BE (sat) 5' 1 - - - 2.5 - - V
4* 0.8 2.5 2.5
Collectorto-Emitter 6* 1.2 _ 1.5
Saturation Voltage V CE (sat) 5* 1 - - - 1.5 - V
4* 0.8 1.5 : 1.5
Reverse-Bias Second-Breakdown
Energy: E S/b -1.5 3 180 - 180 - 180 - 180 - mJ
R BE -3kO, L*40>H
Saturated Switching Time
"B1 ~ 'B2 ): «s
v Cc-
Storage 200 V 4 0.8 - 2 - 2 - 2 - 2
Fall
«f v C c- M»
- - - -
200 V 4 0.8 0.6 0.6 0.6 0.6 COLLCCTM-TO-eMITTE* SATURATION VOLTMC [*ct <•«>) — <
Thermal Resistance:
Junction-to-Case
fyjC - 1.46 - 1.46 - 1.46 - °C/W
1.46|
Fig. 6— Typical base-to-emitter saturation-
a Pulsed, pulse duration = 300 jus, duty factor ^2%. voltage characteristics for all types.
b CAUTION: Sustaining Voltages V CE o<sus) and V CER (sus), MUST NOT be measured on a curve tracer.
336
POWER TRANSISTORS
BUX66, BUX66A, BUX66B, BUX66C, BUX67, BUX67A, BUX67B, BUX67C

High-Voltage Silicon N-P-N and P-N-P Transistors
Features:
For High-Speed Switching and Linear-Amplifier Applications
Large safe-operating area
The RCA-BUX66-series types are silicon p-n-p switches, switching regulators, converters,
Thermal-cycling rating
transistors; the RCA-BUX67-series types are and inverters.
silicon n-p-n transistors. All of these devices 1 00-percent tested to assure freedom from
The BUX66,BUX66A,BUX66B,and BUX66C
feature breakdown voltage and fast
high second breakdown in both forward- and
are p-n-p complements to the n-p-n types
switching speeds. They are intended for a reverse-bias conditions when operated
BUX67, BUX67A, BUX67B, and BUX67C.
wide variety of applications in ac/dc com- All are supplied in the JEDEC TO-66 within specified limits
mercial equipment.
hermetic package. Economy types for ac/dc circuits
Typical applications include high-voltage
Fast turn-on time at high collector current
operational and linear amplifiers, high-voltage
BUX66* BUX66A* BUX66B+ BUX66C*
BUX67 BUX67A BUX67B BUX67C
VcBO 200 300 350 400 V
VcEV(sus)
V BE = -1.5V 200 300 350 400 V
VCER(sus)
RBE = 100fi 175 275 325 375 V JEDEC TO-66
VcEO(sus) 150 250 300 350 V
1 1 1 1 1
V
1
VEBO 6 6 6 6
Hi
'
l l
I
C 2 2 2 2 A j MAX.* 200*'
*
ICM 5 5 5 5 A I
7- »- i i :
A
l
B 1 1 1 1 f
v
PT
Upto25°C 35 35 35 35 W
5
i
«
io —
•
4 -
-
1
\ ^
l^,..
^ u
I
Above 25°C, Derate linearly. 0.2 0.2 0.2 0.2 W/°C \J>*c
3>
-65 200 °C \%
Tj,T stg to
\\
T(_ At distance 1/16
seating plane for
in.
1
(1.58
s max
mm) from
235 235 235 235 °C «
10
MX NUMBER OF THERMAL CYCLES (THOUSANDS)
' L,
\ z
'lOOO
3IC3 -l»2
Fig. 1 — Thermal-cycling rating chart for
BUX66-series types.
-EMITTER VOLTAGE <VCE> — 5V COLLECTOR-TO-EMITTER VOLTAGE (Vce) 10 V

COLLECTOR-TO-EMITTER VOLTAGE IVCE>"-I0V
CASE TEMPERATURE (TC ).25*C
..J
lu
i
e 2
1
g 200
_] I
CASE TEMPE RATURE(Tc)'I50*C

2
6C
|
s & -». §3
T •25*C \ (
$ ISO
§ 25
s \
N
N. I | 20 \
a ICO
§
V 2 \\ #* ^ 2S'C \
\
, 1 1$b^ -S5*C " \
f
,0
\1* I
M o»S^p
.,- — """*
**
^^ 5 \
?
X
;
r i *
V \
6 6 e 6 8 8
' 5
-C 01 X -K K> K>* C tf
.1
COLLECTOR CURRENT (Ic>-

i
COLLECTOR CURRENT (I c > — inA COLLECTOR CURRENT dc I— A

92c8 -is972
Fig. 4 — Typical gain-bandwidth product for

Fig. 2— Typical dc beta characteristics for Fig. 3- Typical dc beta characteristics for
BUX66-series types.
BUX66-series types. BUX67-series types.
337
POWER TRANSISTORS ,

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)'2S°C

VOLTAGE CURRENT BUX66* BUX66A+ BUX66B+ BUX66C*
CHARACTERISTIC BUX67 BUX67A BUX67C UNITS
Vdc Adc BUX67B
SYMBOL VCE VBE IB Min. Max. Min. Max. Min. Max. Min. Max.
'C
150 - 10 - 10 - -5 - -5
'CEO
200 -1.5 8
300 -1.5 - - 8 - -
'CEX
350 -1.5 -8
400 -1.5 -8 mA
200 -1.5 10
300 -1.5 - 10
T C = 100°C - - -10 -
350 -1.5 10
400 -1.5 10 -10
'EBO -6 - 1
- 1
- 1
- 1 mA
"FE 5 ia 10 150 10 150 10 150 10 150
VcEO' sl ls - * 0.2» 150C - 250C - -300C - -350c
VcER(sus) V
rbe =5on 0.2 175C - 275C - -325C _ -375C _
VBElsatl \» 0.15 - 1.5 - 1.5 - -1.5 - -1.5 V

VcElsa'l ia 0.15 - 2.5 - 2.5
- -2.5 - -2.5 V
c obo
V CB =10V
f = MHz 1
BUX67 Types - 120 - 120 - 220 - 220

pF
BUX66 Types 200 200 220 220
's/b
t= 1 s, nonrep. 40 875 _ 875 _ -875 _ -875 _ mA
E S/b
'
I = 100 /uH
= 20 n -4 50 _ 200 _ 200 _ 50 _
Rbe AiJ
|h(t|
f= 5 MHz
BUX67 Types 10 0.2 2 - 2 - 2 - 2 -
BUX66 Types -10 -0.2 4 4 4 4
V cc = 200 V
BUX67 Types 1
0.1b - 3 - 3 - 3 - 3
BUX66 Types -1 -0.10" 0.6 0.6 0.6 0.6
V cc = 200 V
BUX67 Types 1 0.1 b - 4 - 4 - 4 - 4 MS
BUX66 Types -1 -0.10b 2.5 2.5 2.5 2.5
tf
V cc= 200 V
BUX67 Types 1 0.1 b - 3 - 3 - 3 - 3
BUX66 Types -1 -0.10b 0.6 0.6 0.6 0.6
R fVJC 5 - 5 - 5 - 5 °C/W
Pulsed: Pulse duration = 300 ys: duty factor < 2%. b lB1 =l
B2 * For p-rip devices, voltage and current values i
e Sustaining voltages, VcEO< sus ' ancl VcER< sus MI-'^ T N ^ T

)
be me a sured on a curve tracer.
338
' - V
POWER TRANSISTORS

-i6 8
1
1
II 1
< IC (MAX.) CONTINUOUS

2
I V?^
>°''
H -1 '
^^nT^
X?
$
t\<
8 -o'i
N*•v\
f"
VCEO (MAX> -ISO V (BUX86)
VC EO (MAX.) --250 V (BUX6BA)
-OOI- \fc EO (MAX>-300 v(Buxees)-
Fig. 7 — Maximum operating areas for

BUX66-series at Tc = 100°C
I0 a
I I II I
IC (MAX.) CONTINUOUS
*
I
<*\
>*V
V 59 V, 0.32 I
^
o o I
•
%
'"'&'
"CE< (MAX.) -250 V (BUX67A)

(MAX ) -300 V IBUX6TB
VC E (MAX ) -350 V (BUX67C)
6 8 2
I 4 I I I 6 8 10 KX> 150 KX
100 -150-250 -350
COLLECTOR-TO-EMITTER VOLTAGE (VC E> —V " 30°
92CS- 26006
Fig. 8 — Maximum operating areas for
Fig. 5 — Maximum operating areas for BUX66-series types. BUX67-series at T = 100°C. c
[COU-E CT<>R-T0-EMITTER VOLTAG E 'VCE'--»V

JIIIIIIIIIH
T Wm
i -isiHI
a? J
3 "' 11
-o.siBjw
i
Mill/'-
ffffff
Fig. 9— Typical transfer characteristics for

BUX66-series types.
|CASE TEMPERATURE 1TC )'25*C TOJt
e
i mm
IHIIH
H »00§§}jj
J T0o|gl|
= 600gSj| HfitjfeFI^BB; >S WAT IS jgg
s sooUjm liirtniillHi-f * iniiiiiiiiihuiih
u 400|
lit uffii liBilliHI II
S 300| iiiiiiiiiiiiiiiiiiiiiiiiiL? ffytt

20o| MA
HHB BASE CURRENT ( I i>" 1
2 I I I 4 6 8
,
iooH TnttTTmiiiiHiiiiiiiiiiiitttti ^!
100 I
250 350 I 1000
150 300
100 123 150 173
COLLECTOR-TO-EMITTER VOLTAGE <Vce>— V COLLECTOR-TO-EMITTER VOLTAGE (V CE )—
92CS-26078 92CS-20002

Fig. 6 - Maximum operating areas for BUX67-series types atTc = 25 C.
BUX67-series types.
339
POWER TRANSISTORS

3 CASfl! MK RATI mc rr
ci
18" ettj
ru^ r: ;i CASE TEMPERATURE IT C ).2S"C
COLLECTOR-TO-EMITTER VOLTAGE <Vfc£) • 10 V
:::" ~-l : ~= :
- ff?f ::{T :lff
SO
:;::
:- ::_. M *v ?/ */
l HE i l i
;.
in ::;: */
1
::~ ^ - ::tr
i > ft!
/
7
:•=-:
j
-4 1 I" *5y
>8
'•=
ffffj :3t
a
si
i
=":=
^~ fiff
'.'
= J :::: ffif ..i'
-3 3
1 /
r
S8 ;•'
~:r rd d ::':':
":'
III;
JO HI
*/
*2
SB
~
ff'i ll~ H." -d
— trfr — rffr
— t 3 20 #
~
,
*! ;;;f
- ii~
iiii Iiii
::: :.T: ™ 'fili
iff: 2
<?/
: 10
:fi: :::; :ff -~H
i:= js-
:;:;
p3 nn ::£ fiir :::: ff-f: iiii iiif
'f :::: : - :::r
BASE-TO-EMITTER VOLTAGE IV BE I —
(IC) —A 92CS-26008
Fig. 11 - Typical saturation-voltage characteristic fig. J2 - Typical saturation-voltage charac- Fig. 13 — Typical input characteristics for
for BUX67-series types. teristic for BUX66-series types. BUX67-series types.
CASE TEMPERATURE (TC 1.25*C :

I I I l [
CASE TEMPERATURE • 25'C
SASE-TO-EMITTER VOLTAGE (V |.-4V K
EXTERNAL BASE -TO- EMITTER RESISTANCE Rgc )• 20 fl t+\4+
|
| I I }
-
<Tc>
{ -
RESISTANCE (Reel • 20 a 3
INDUCTANCE (L) T&O^H
T
A
^^^ ::::: 2 i
u 3
E
"""^
x 2 -- — i 8
100 200 300 400

INDUCTANCE ID-
EXTERNAL BASE-TO-EMITTER RESISTANCE (R BE I —U BASE-TO-EMITTER VOLTAGE (V„
Fig. 14 — Reverse-bias second-breakdown Fig. 15 — Reverse-bias second-breakdown Fig. 16— Reverse-bias second-breakdown
characteristics for BUX67-series characteristics for BUX67-series characteristics for BUX67-series
types. types. types.
S£ PULSE DURATION 2 2C I2
PULSE OURATION: 20 M s
BE REPETITION RATE • 2oo pO LSES/t -- 1 REPETITION RATE 1000 PULSES/I -
ffi COLLECTOR SUPPLY V OLTAC C lVc C l— 200 V I COLLECTOR SUPPLY VOLTAGE (Vc(4 200 V
i II ^l" 1 ** I.0
. 1 CASE TEMPERATURE (Tc ) • Z5"C
CASE TEMPERATURE ITC ). 25'C 1
IB, -lB 2
gf:
I a, i
" :-j r
i
i
i
S 03 SSs.'V'
i
: :
i
1 06 j
s I
i
J S- S 1 l
'
J 02
1 a 04
-A**
S
| 0.1
l S:
02 DC BET A«i rf'r*
HH
::..
COLLECTOR CURRENT (I c )— 92CS-260I0 92CS-260II
Fig. 17 — Typical turn-on time and fall-time
characteristics for BUX66-series Fig. 18 Typical storage-time characteristic for Fig. 19 — Typical rise time vs. collector current
types. BUX66-series types. for BUX67-series types.
09 :
PULSE DURATION "20»>

PULSE DURATION* 20 >> PULSE 0URATI0N»20 ,•
COLLECTOR SUPPLY VOLTAGE (Vrr )'200V REPETITION RATE -1000 PULSES/f CO LLE TOR SU >PLY vo TAGE,VCC) . 200 V
CASE TEMPERATURE (T c • 25'C I C .ia; I B .O.IA CA SE T EMP ERA URE "C •2
> 8
*B>' Z *Z
CASE TEMPERATURE Tc I ). 25'C I
IB 2
lllili::: i'f
BO X 0.7
\_
60 u 06
|
S 1 \
,
* < 05
::::
A ri?
I
£ 2»
ft.*B'ft. 04 + ^1
/o iiii
• ! 1
W- 03 j- . -i iffi j
'•
fii: fii; iiif
2 4 06 OS 10 12
COLLECTOR CURRENT (I,.) —
Fig. 21 — Typical rise time, fall time, and
Fig. 20 — Typical storage time vs. collector storage time vs. collector supply Fig. 22 — Typical fall time vs. collector current
current for BUX67-series types. voltage for BUX67series types. for BUX67-series types.
340
POWER TRANSISTORS
MJ15001, MJ15002
Complementary N-P-N/P-N-P Silicon Power Transistors
Features:
Rugged Devices, Broadly Applicable For Industrial and Commercial Use
High-dissipation capability

The RCA-MJ15001 and MJ15002 are bal- MJ15001 n-p-n transistor complements the
lasted epitaxial-base silicon transistors fea- MJ15002 p-n-p transistor. These types are
turing high gain at high current. The supplied in the JEDEC TO-204MA packages. f
T = 2 MHz
MAXIMUM RATINGS, Absolute-Maximum Values: Applications:

MJ15001 I
v CBO Series and shunt regulators

140 -140 V
v CEO 140 -140 V High-fidelity amplifiers
V EBO- 5 -5 V
-15 Power-switching circuits
<C 15 A
'b 5 -5 A Solenoid drivers
>E 20 -20 A
At T c ^ 25 200 -200 W
AtT c >25°C 1.14 W/°C
T stg- T J -65 to 200 °C
TL
At distance > 1/32 in. (0.8 mm) from seating plane
for 10 s max 230
JEDEC TO-204MA

(T c ) = 25° C Unless Otherwise Specified
CHARACTERISTICS VOLTAGE CURRENT

MJ15001 MJ15002 UNITS
Vdc Adc
VCE vB e 'c >B Min. Max. Min. Max.
'CEX 140 1.5 - 1 - -1

mA
T C =150°C 140 1.5 - 2 - -2 SO 79 100 129 190 179 200
C»SC TCMPCMTURE IT C )— "C
'ceo 140 - 2.5 _ -2.5 mA

Fig. 1 — Current derating curve for both types.
'ebo 5 - 1
- -1 mA
v CEO (sus >
a
0.2 140 - -140 - V
HOBBJ
h FE a 2 4 25 150 •
25 150 ft!
o
VBE 2 4 - 2 _ -2 V 2 >• —
s li" "'"»»
E KX>-
VCE (sat) 4 0.4 - 1 _ -1 V
™ s
* ^t
z
4 4 "
f
T f = 0.5 MHz 10 0.5 2 - 2 - MHz
oe
1- 2
(>5«
l^
Z
40 5 - -5 - £ io-
1s
'S/b { P -
100 .0.5 -0.5

A 3
o
•
•
cob
V CB = 10 V - -
i:
1000 1000 pF 8 i
4 « • 2 4
f = 1 MHz O.OI 0.1 I IU IUU
COLLECTOR CUR«E«T(I C I-* „ C ,. J0|4 ,
R 0JC - 0.875 - 0.875 °C/W Fig. 2— Typical dc beta characteristics as a function
of collector current for MJ1500I.
» CAUTION: Sustaining voltage. V CEQ (sus). MUST NOT be measured on a curve tracer.
341
1
POWER TRANSISTORS
MJ15001, MJ15002
io66.
lii «
o
5 *
125'
gioo
«
"
CASE TEMPERATURE1
^
]
6
(T c >-23' C
2 «
^
5 *
g s^
5 10-
3 •
•
oc .
< 4
2 4 6 l_
COLLECTOR CURRENT (I c )-A 92CS-W077
Fig. 4 — Typical dc beta characteristics as a function

of collector current for MJ15002.
COLLECTOR-TO-EMITTER VOLTAGE(VCE )- V
Fig. 3 — Maximum operating area for both types.
t::r
I
COLLECTOR - TO- EMITTER VOLTAGE <Vc E l' 2V
Si
li-
-T '4 st:
-1
ij liij
ir 1 T o|||||||
frt
|j !i
iffi&JW'Jffi
13: II
t
i.i II
- -08
~\ii
:B it
^sf K
k
a |H lllllllllillll
iniinmniiiiiiHi'iii"
llllllll
«c
t n
% -06 Bjif.
VJiLmiiiiiiiiiiiiiiini
$ 111 [111 lllllll' *jk^bI lllllllllillll lllllllllllllll
^Mâw<^
1
S -04 $<y <

a IIIIIIIIIIIIIIIIIIIIII^W
j lml|lnlll|,'i/ff' iffl lllllllllll lllllllllillll
-02 ' HI r - innlin] iiiLiiiliiiuiilHatHiati
^^Pîfliill
o^^^llllllllllllllllllllMMMI
1 1 I^^^M
0.2 OS 14 1.8 22 2.6 I
BASE-TO-EMITTER V0LTA6E <V B E>-V »2CS-30I46

BASE-TO- EMITTER VOLTAGE (V BE)-V 92CS-30I49
Fig. 5— Typical input characteristics for MJ15001. Fig. 6- Typical input characteristics for MJ15002.
pjg ? _ Typjcgl transfer characteristics for MJ15001.
COLLECTOR-TO-EMITTER VOLTAGE (VCE ) -2v|nnnnf ic/ig-i oHjrrffll
*
f -K> 1 -25
2
£ -8 5>" 2
111 11 milium iiiiiiiiiiiiiii inKoTUfffi " 1
% iiiiiiiiiiiiiiiiiiii^y^Ji Sf 1
-6 fci-i.s
ij
O
-4 ^^K^H
II 1
1 111 1 1 ^/ffy^f^^ffi
?2 -1
Bîlllllllllllllllllllllllll
-2 |-o. 5
Q
-0.2 -0.6 -I -1.4 -1.8 -22 -2.6 -10 -12
BASE-TO-EMITTER VOLTAGE <Vg E l-V 92CS-300T9 COLLECTOR CURRENT <I C )-A 92CS-30I47 COLLECTOR CURRENT (IrV-A 92CS-:
Fig. 9— Typical saturation voltage characteristics

Fig. 10 — Typical saturation voltage characteristics
Fig. 8 — Typical transfer characteristics for MJ15002. for MJt500t. for MJ15002.
342
POWER TRANSISTORS
MJ15003, RCA3773, RCA8638C, RCA8638D, RCA8638E

Features:
Rugged Devices, Broadly Applicable For Industrial and Commercial Use
High-dissipation capability
The RCA3773, MJ15003, RCA8638C, RCA- They

differ in voltage ratings and in the
8638D, and RCA8638E are ballasted epi-
taxial-base silicon n-p-n transistors featuring trolled. All are supplied in the steel JEDEC
f
T = 2 MHz
high gain at high current. They may be used TO-204MA packages.
ascomplements to the p-n-p types 2N6609,
MJ1 5004, RCA91 1 6C, RCA91 1 6D, and RCA-
Applications:
9116E, respectively.

MAXIMUM RATINGS, Absolute-Maximum Values: Power-switching circuits

Solenoid drivers
RCA3773 MJ15003 RCA8638C RCA8638D RCA8638E
V CB0 160 140 140 120 100
v CEx' sus '
V BE = -1.5 V; R BE = 100n .160 - - -

V CER (sus)
R BE = 100n 150 150 150 130 110 V
V CE0 (sus) 140 140 140 120 100 V
v EBO 7 5 V
l
c 20 A
25°C Derate linearly 0.857 1.43 1.14 W/°C
T ltB Tj . 65 to 200 °C
TL JEDEC TO-204MA
At distanced 1/32 in. (0.8
10 s max.
mm) from fJ.i j4 im. : : :
|g:m Utr
seating plane for . 230 ~'t&
w8
n
So §*
15c
u 6» siU
\k m ^sz:
If- lilt! IT
IS 90 TS 100 I2S 190 ITS 200
C»S£ TCMPCRATURC (T c l— 'C
Fig. 2 - Current derating curve for all types.
.„. T, n
£ •
o
5
a
»
\1V — •v.
5 100-
» e oot
're* pt«»
S ..
c**1
yL t
z
K 10-
3 8
* 4
"
COLLECTOR-TO-EMITTER VOLTAGE <VrF l- V
92CM-30I45
a i
Fig. I — Maximum operating areas for all types. t s • < e • i 4 e 4 •

100
92cs . 30
Fig. 3— Typical dc beta characteristics as a function
343
POWER TRANSISTORS.

ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C
Unless Otherwise Specified (Cont'd)
TEST CONDITIONS
1 IMITS
VOLTAGE CUR-
CHARAC- Vdc RENT
RCA8638C RCA8638D RCA8638E UNITS
TERISTIC Adc
VC E Vbe 'c Min. Max. Min. Max. Min. Max.
140a 1
'CBO 120a - - 1 -
100a 1
14a 1.5 - 1
- - -
'CEX 120 1.5 1
'CEX 140 1.5 - 5 -

T c = 1 50°C 120 1.5 _ 5 _ mA
•ceo 70 1
- - -
60 -
!
B = 1
5 - - -
'ebo 1 1 1
2 5C 25 150 25 150
*FE
2 7.5C 10 100
2 10C 10 10
V CER (sus)b - -
0.2 150 130 110 -
R BE < 10012
V CE0 (sus)b 0.2 140 - 120 - 100 -

v EBO - - -
5 5 5 V
l
E =1mA
VBE 2 7.5C - - - 3
2 5C 2 2
V CE (sat)
= 0.75A 7.5C - - - 1.5
l
B
= 0.5A 5C 1 1
•S/b
t =1 s 35 5.71 - 5.71 - -
p A
nonrep. 25 8
Ih fe |
10 0.5 4 - 4 - 4 -
f = 0.5 MHz
H 2 - 2 - 2 - MHz
c ob - - -
1CH» 500 500 500 pF
f = 0.1 MHz
R 0JC 10 10 - 0.875 - 0.875 - 0.875 °C/W
b CAUTION: Sustaining voltages
a Vgg VcEx' sus '- v'CEfV
r.FR* sus )' and
c Pulsed; pulse duration = 300 us,
V CEO* sus MU$T NOT be measured on a curve tracer.
' i i duty factor = 1 .8%.
344
POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25° C Unless Otherwise
Specified

VOLTAGE CUR-
CHARAC- Vdc RENT UNITS
TERISTIC
Adc RCA3773 MJ15003
VC E vB e 'c Min. Max. Min. Max.
'CBO 160« 4 -
140* : 2 1
'CEX 140 -1.5 - 1 „

- 0.1
'CEX , f 40 -1.5 - 5 - 2 Fig. 4 - Typical saturation voltage characteristics

T c = 150°C
for all types.
mA
'ceo 140 — 0.25
l
B
=0
120 1
'ebo
7 - 1
-
5 0.1
"FE 4 8C 15 60
4 16C 5
2 5C 25 150
2 10C 10
Vqex' sus '*> -1.5 0.2 160 - - -

R BE = 100ft 02 0.6 I 1.4 1.8 2.2 2.6
BASE -TO- EMITTER VOLTAGE <V BE )-V
V CER (sus)b 92CS-90I4S
0.2 150 - 150 -
R BE < 10012 Fig. 5- Typical input characteristics for all types.
V CE0 (sus)b 0,2 140 - 140 -
v EBO
7 - 5d -
l
E
= 1 mA
4 8C - 2.2 - V
VBE
2 5C 2
V CE (sat)
l = 3.2A 16<= 4
B
= 0.8A 8C - 1.4 -
= 0.5A 5C 1
!
S/b 100 1.5 — 1
t =1s 50 5 - A
p °2 6 I 1.4 1.8 2 2 2.6
nonrep.
BASE-TO-EMITTER VOLTAGE (V BE I-V 92CS-30I49
Ih fe l
f = 0.5 MHz 10 0.5 4 4 Fig. 6 — Typical transfer characteristics for all types.
*T 2 - 2 - MHz
31 COLLECTOR SUPPLY vo LTAGE (Vfc c )«30 V
h fe
4 1 40 - - -
m r B| -iB 2 "i/iotc
68] CASE TEMPERATUR E T C )-25*C (
f= 1 kHz t 2
* tlHHJIlllHlllillllH:
cob lulrHMFlffinPii Ml
10» - 500 - 500 pF * 1.6
f = 0.1 MHz
R 0JC 10 10 - 1.17 - 0.7 °C/W
'- mnTrrntitnTTTn
• V(-g CAUTION: Sustaining voltages v CEx' sus '- V CER' SUS '' and C ** ulsed Pu'se duration k oa lji||j|{||||||lj|-tt^
*• - = 300«js,
V^cq(sus) MUST NOT be measured on a curve tracer. duty factor = 1 .8%. r*
~ 04 «tyttttllllllllrffi
** Measured at l
c = -0.1 mA.
'
COLLECTOR CURRENT (1 C I-A

92CS .
J0 |5|
Fig. 7 - Typical saturated-switching times for

all types.
345
POWER TRANSISTORS ,
RCA1A01-RCA1A11, RCA1A15-RCA1A19
term.naldes.gnat.ons
Silicon Transistors for Audio-Frequency
Linear-Amplifier Applications
"RCA1A-Series" n-p-n and p-n-p silicon transistors are es- TYPES
N-P-N
pecially characterized for audio-amplifier applications. They -t*© <W)~c (C6SE)
RCA1A01 RCA1A11 e
are particularly useful as input devices, V BE multipliers for
RCA1A03 RCA1A15
biasing, current sources, load-line-limiting (protection) circuits,
prAIAflfi RTA1A17 92CS-2T5I2
predrivers, and in some instances as complementary drivers.
•J:
RCA1A07 RCA1A18
Other applications for these devices include audio power
amplifiers, linear modulators, servo amplifiers, and opera- RCA1A09 JEDEC TO-39
tional amplifiers. The units are supplied in the JEDEC TO-39 TYPES P-N-P
package.
RCA1A02 RCA1A10
RCA1A04 RCA1A16
RCA1A05 RCA1A19
RCA1A08
MAXIMUM RATINGS, Abtoluf-Utximum RCA1A01 RCA1A02 RCA1A03 RCA1A04 RCA1A06 RCA1A06 RCA1A07 RCA1A0B
COLLECTOR-TO-BASE VOLTAGE
Vtlues:
V CB0 - -96-96 -75 75 50 -50 V
V CE0 70 -50 - - - - 40 -40 V
With base open

ance(R BE )-100n
resist-
V CER - -95-95 -75 75 50* -50 V
EMITTER-TO-BASE VOLTAGE V EB0 4 -4 4 -4-4 4 3 -5 V

2 ~2 ~1 1 -1 A
COLLECTOR CURRENT I
c 1 -1 '
OS -0.5 -1 -0.5 0.05 -0.05 A

BASE CURRENT I
B
1 0.5
TEMPERATURE RANGE:
PT
«•
••—
5
— '
7 10 10
-66
See Fig.
to
1
+200
5
— 5 5 7^
•*
•»
W
oC
At distances > 1/32 in. (05 mm)
from case for 10 s max « ~ 23° " *"
oC
A
•r be » 10 n R BE -30on
MAXIMUM RATINGS, Absoluu-Uaximum Vilues: RCA1A09 RCA1A10 RCA1A11 RCA1A1S RCA1A16 RCA1A17 RCA1A18 RCA1A19
With base open , v CEO
COLLECTOR CURRENT I
c
BASE CURRENT I
B
At case temperetures up to 25°C

TEMPERATURE RANGE:
from case for 10 s max
Type RCA1A01
Package: JEDEC TO-39 Type RCA1A02
Construction: Silicon n-p-n, planar Package: JEDEC TO-39
Construction: Silicon p-n-p, epitaxial planar
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc l =
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) =
2?C Unless Otherwise Specified
J
2b 'C Unless Otherwise Specified
LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX. LIMITS
MIN. MAX.
V CE = 60V,I B =
_ 1 uA
>CEO
- -1 MA
'CEO V CE = -40V,I B =
V EB = 4V,I C =
- 1 mA
'EBO
V EB = -4V,I C =
- -1 mA
'EBO
v CEO = 100 mA 70 - V
l
c
- MHz -50 - V
*T V CE = 50mA
4V,l c = 120 v CEO l
c = -0.1 A
40 200 V CE = -4V,l c = -50mA 60 - MHz
"FE = = 4V
10mA,V CE *T
l
c
V CE (sat) - V mA,V CE = -10V 30 200
l
c = 150 mA, B = 15mA
1.4
"FE l
c = —0.1
- V - -0.8 V
VBE l
c =10mA,V CE = 4V
1 VBE l
c = -0.1mA,V CE = -10V
For characteristics curves and test conditions, refer to published
data for prototype 2N4036
346
POWER TRANSISTORS
Type RCA1A03
Type RCA1A04
Package: JEDEC TO 39
Construction: Silicon n-p-n, planar
Construction: Silicon p-n-p, epitaxial-planar
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) =
25° C Unless Otherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX. MIN. MAX.
'CER Vce = 85V,R B E= 100SJ 10 MA ICER VCE = -85V, R BE =100J2 -10 M

lEBO VEB = 4V, C = _ mA V£B = 4V,
l 0.1 lEBO Ic = -0.1 mA
VCER ic = o.i a. r be = ioon 95 _ V VCER ic = -o.i a, r be = ioon -95 _ V
fT IC = 0.1 A, VcE = 4 V 50 - MHz fr IC = -0.1 A,VCE = -4V 50 - MHz
hFE IC = 300 mA, VCE =4V 70 300 hFE IC = -300mA,VcE = -4V 70 300
VcE(sat) IC = 300 mA, Ib = 30 mA - 0.8 V V CE (sat) IC = -300mA, Ib = -30 mA - -0.8 V
VBE IC = 300 mA, VCE = 4V - 1.4 V v BE IC = -300 mA, Vce = -4 V - -1.4 V
IS/b VcE = 50V,t = 0.4s 0.2 - A VC E = -35 -

'S/b V, t = 0.4 s -0.285 A
For characteristics curves and test conditions, refer to published For characteristics curves and test conditions, refer to published
data for prototype 2N5320 data for prototype 2N5322
Type RCA1A05
Package: JEDEC TO-39 TypeRCA1A06
Construction: Silicon p-n-p epitaxial planar Package: JEDEC TO-39
25" C Unless Otherwise Specified ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) =
2S°C Unless Otherwise Specified
CHARACTERISTIC LIMITS
TEST CONDITIONS UNITS LIMITS
MIN. MAX. CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX.
'CER V CE = -65V,R BE =100n -10 MA

'CER v CE = 65v, r be = ioon 10 MA
'ebo V EB = -4V.I C = _ -0.1 mA

'ebo V EB = 4V,I
C= - 0.1 mA
V CER l
c = -0.1A, R BE = ioon -75 _ V
VCER l
c = 100mA,R BE = 100n 75 - V
= -50mA,V
*T l
c CE = -4V 60 MHz
-
»T IC = 50mA, VcE = 4 V 120 MHz
hFE l
c = -150mA,V CE = -4V 50 250
hFE l
c= 150mA, V CE = 4V 50 250
V CE (sat) IC = *-150mA, B = -15 mA l - -0.8 V
V CE (sat) Iq= 150 mA, B = 15 l mA - 0.8 V
VB E l
c -150mA,V CE = -4V
= - -1.4 V
VB E IC = 150 mA, V CE = 4V - 1.4 V
's/b V CE = -65V,t = 0.4s -0.1 - A V CE -

'S/b
= 65V, t= 0.4 s 0.077 A
Type RCA1A08
Type RCA1A07
Construction: Silicon n-p-n, planar ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc! =
LIMITS
25° C Unless Otherwise Specified CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX.
CHARACTERISTIC LIMITS
TEST CONDITIONS UNITS
MIN. MAX.
'CER V CE = -40 V, R BE = 3300 -10 MA
'ceo V CE = 40 V 10 MA 'EBO V EB = -5 V _ -0.1 mA
'ebo V EB = 3V, c = _ 0.1 mA V CEO = -100 mA, B = -40 _ V

l l
c l
V CE0 = 100 mA 40 _ V V CER = _ioo mA, R BE = 33012 -50 - V

l
c l
c
<T V CE = -10V, c l = -50mA 60 - MHz
V CER l
c = 100mA,R B E = 10n 50 _ V
hFE l
c = -50mA,V CE = -1.5V 70 250
h V CE =10V.l c = 50mA 120 - MHz VCE (sat) l
-100 mA, B
= l = -5 mA - -1.4 V
c
hFE l
c = 3mA,V CE = 10V 50 250
-5 mA -
V BE (sat) (
c = _100mA,l B = -1.4 V
V CE (sat) l
c 20mA. B = mA
= I 1
- 1 V
V BE (sat) -
l
c = 20mA, B = 1mA l 1.3 V 'S/b V CE = -35 V, t = 0.05 s -0.12 - A
347
POWER TRANSISTORS
Type RCA1A09 Type RCA1A10
Package: JEDEC TO-39 Package: JEDEC TO-39
Construction: Silicon n-p-n, epitaxial Construction: Silicon p-n-p
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tc) = ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) =
25°C Unless Otherwise Specified 25° C Unless Otherwise Specified

LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS LIMITS
MIN. MAX.
V CE =90V, B =0 " 10 *iA
'ceo l
V CE = -120 V, B = - -10 MA
'ceo l
V EB = 6V.I C = - 100 (iA -

'ebo 'ebo V EB = -6V,I C = -100 ma
v CEO 10mA, B = 175 - V -

l
c
-- l
v CEO l
c = -10 mA, B l = -175 V
- 10 mA. V CE = 10 V 15 - MHz -
<T l
c *T IC = -10mA,VcE = -10 V 15 MHz
h FE = 10 mA, V CE = 10 V 20 100
c c = -10 mA, V CE = -10 V 40 250
l
"FE l
V CE (sat) 50 mA, lg mA " V " V

l
c = = 4 0.5
V CE (sat) l
c = -10 mA, B l = -1 mA -2
VB E = 10 mA, V CE = 10 V - 0.9 V -10 mA, V CE -10 V - -0.8 V

l
c VBE l
c = =
V CE = 150 V.t = 1 s 0.065 - A V CE = -150 V,t= 1 s -0.04 - A

's/b 'S/b
for characteristics .urves and test conditions, refer to published data (or prototype 2N3439 For characteris and test conditions, refer to published data for prototype 2N541b
Type RCA1 All Type RCA1A15

Construction: Silicon n-p-n, epitaxial Construction: Silicon n-p-n, epitaxial
Case Temperature (Tc) = ELECTRICAL CHARACTERISTICS, At Case Temperature (TC ) =

ELECTRICAL CHARACTERISTICS, At
25°C Unless Otherwise Specified 25°C Unless Otherwise Specified
LIMITS
LIMITS CHARACTERISTIC TEST CONDITIONS UNITS
CHARACTERISTIC TEST CONDITIONS UNITS MIN. MAX.
MIN. MAX.
V CE = 90 V, = " 10 MA
'CEO l
B
ICEO VCE = 90 V 10 MA
V EB = 6V,I C = - 100 ma V EB 5V, _ mA

'ebo 'EBO = lc = 1
- V VCEO lc = 10 mA, lg =0 100 _ V

v CEO l
c = 10 mA, B = l 175
-
fT VcE= 10 V, lc= 10 mA 15 MHz
mA, V CE V - MHz In = 10 mA, VcE = 10 V 100
t l
c = 10 = 10 15 hFE 20
-
VcE(sat) If;
= 10 mA, lg = 1 mA 1 V
hFE l
c = 1 mA, V CE = 10 V 40 250 VBE IC= 10 mA, VcE= 10 V - 1 V
VB E = mA, V CE = 10 V 0.5 0.7 V -

l
c 1
'S/b VCE = 50 V, t = 0.4 s 0.2 A
For characteris s and test conditions, refer to published data for prototype 2N3439 data for
prototype 2N3440
Type RCA1A16 Type RCA1A17

Construction: Silicon p-n-p, epitaxial Construction: Silicon n-p-n, planar
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) =
2S°C Unless Otherwise Specified
25°C Unless Otherwise Specified
LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS LIMITS
MIN. MAX.
ICEO VC E = -90 V -10 HA = 80V,

'CEO VcE l
B = 1 (iA
lEBO V EB = -5V, C = _ -1 mA
l
'EBO VE g = 4V, lc = _ 1 mA
VCEO lc =-10 mA, lg = -100 _ V _
VCEO c = 100 mA, lg = 90 V
fT VcE = -10V, lc = -10mA 15 - MHz
l
-
fT VCE = 4V,lc = 50mA ISO' MHz
hFE IC = -10mA, VcE = -10V 40 250
= 10 mA, VcE = 1V 40 200
- hFE 1C
VcE(sat) IC = -10 mA, lg = -1 mA -1 V - V
- VcE(sat) IC = 150mA, lg" 15mA 1.4
VB E c = _10mA, V C E = -10V -1 V -
|
VBE IC = 10mA,VcE = 4V 1 V
IS/b VCE = -50 v . t = 0.4 s -0.2 - A For characteristics curves and test conditions, refer to published data
for prototype 2N2102
For characteristics curves and test conditions, refer to published data
for prototype 2N5416
348
POWER TRANSISTORS
Type RCA1A18 Type RCA 1 A 19
Package: JEDECTO-39 Package: JEDEC TO-39
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI - ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) -
25°C Unless Otherwise Specified 2ffC Unless Otherwise Specified
LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS CHARACTERISTIC TEST CONDITIONS
LIMITS
MIN. MAX. UNITS
MIN. MAX.
'CEO VCE = 5V, B = 10 MA

l
'CEO VCE = ~5V. BI = -10 MA
lEBO V£B = 4 V, C= _ mA VE B -4V, C _

l 1
lEBO = l = -1 mA
VCEO IC = 10 mA, Ib = 10 V lC = -10 mA, Ib = -10 _ V
VCEO
IT lC = 50 mA, VcE = 4 V 120 - MHz -50 mA, Vce = -4 V -
<T lC = 60 MHz
hFE If. = 10 mA. Vpf = 4 V 40 250 hFE IC = -10mA, VCE--4V 40 250
VcE(sat) lC = 10 mA, Ib = 0.5 mA - V -
1
VcE(sat) lC = -10 mA, Ib = -0.5 mA -1 V
VBE IC= 10 mA, VcE = 4V - 0.78 V VB E -10mA, Vce -4V -
IC = = -0.78 V
349
POWER TRANSISTORS
RCA1B01
Silicon Transistor for 70-Watt
Quasi-Complementary-Symmetry
Audio Amplifiers with Hometaxial-Base
Output Transistors
RCA1B01 is an n-p-n hometaxial-base silicon transistor RCA1B01 in conjunction with seven TO-39 transistors,
ina JEDEC TO-3 package. This device is particularly suitable eleven diodes, and an 84-volt split power supply. The amplifier JEDEC TO-3
for audio-output use, and can be driven by either the output is directly coupled to an 8-ohm speaker. This amplifier
RCA1 A03 n-p-n or RCA1A04 p-n-p transistor. ismost useful for instrumentation applications where rugged-
ness and raw power are essential.
The 70-watt amplifier shown in Fig. 4 uses the
RCA1B01
COLLECTOR-TO-BASE VOLTAGE VcbO

With external base-to-emitter resistance (Rp,E* = 100£2 VCER
EMITTER-TO-BASE VOLTAGE VgBO
COLLECTOR CURRENT iC
BASE CURRENT I
B
At case temperatures up to 25 C 115
TEMPERATURE RANGE:
At distances > 1/32 in. I0.8 mml from case for 10 s max
Type RCA1B01
Package: JEDEC TO-3
Construction: Silicon n-p-n, hometaxial base
ELECTRICAL CHARACTERISTICS, At Case Temperature ITq) =

LIMITS
MIN. MAX. ido I I I
'
's^Tj MAX. .200-C

*
mA
'CER VcE = 85V,R BE = 10M2 0.5 JL
6
v* I
'EBO VEB 4V = . 'c = o _ 1 mA SSj

s!
VCER IC = 0.2A, R B E = 100S2 95 _ V
VCE v 'C= 1 A
= 4 0.8 - MHz
«T .
hFE
VcE(sat)
VBE
|
C = 4A, Vce =4 V
IC = 4
|
C = 4 A,
A - iB = 0.4
VCE = 4
A
V
20
-
-
70
1
1.4
V
V
*
S
?
2 "
\ 5>«
'S/b
For characteristics curves and

data for prototype 2N3055 (
Vce = 60V, t =
test conditions, refer to

Hometaxial).
1 s 1.95
published
- A 10
n
i.
\ I
MBER OF THERMAL CYCLES
90*C THOMAL
T
"T ij 1 Â. Fig. 2- Thermal-cycling ratings for RCA 1B01.
CASE TEMPERATURE (T
(CURVES MUST BE DERATED LINEARLY NORMALIZED

WITH INCREASE IN TEMPERATURE ) + POWERj—
MULTIPLER
_L SOV
1. T: Signal 56-4 # Signal Transformer Co., . Resistors are 1 /2-watt unless otherwise 3. Capacitances are injlF unless otherwise specified.
,
4. Non-inductive resistors. • Or equtvalent.

1 JuniusSt., Brooklyn, NY, 11212 specified; values are in ohms.
Fig. 1 - 70-Watt amplifier circuit featuring quasi-complementary-symmetry output employing Fig. 3 - Maximum operating areas for RCA 1B01.
hometaxial-base output transistors.
350
POWER TRANSISTORS
RCA1B04, RCA1B05, RCA1B09

and
Silicon Transistors for 100-,120-, 200-,
300-W Quasi- Complementary-Symmetry Audio
Amplifiers with Parallel Output Transistors
The RCA1B04, RCA1B05, and RCA1B09 load-line limiters (for overload protection),
are silicon n-p-n pi-nu transistors in a JEDEC and predrivers, may be used to develop
TO-3 package. They are especially suitable several hundred watts of audio output power
for applications in audio-amplifier circuits, in quasi-complementary-symmetry audio-am-
in which they may be used as either driver plifier configurations that employ parallel
or output unit. output transistors. Circuit examples,
These devices, together with a variety of data are shown for 100-, 120-, 200-, and 100
other transistors that serve as input devices, 300-W amplifiers.
Vbe amplifiers for biasing, current sources.
•
I
Z 4
O
CASE-TEMPERATURE
\ CHANGE (AT C ) " S0*C

\
u 2 8 \
RCA1B05 *
O \
X
RCA1B04 RCA1B09
v CBO 225 275 (? 1150 wzsmXioo'C \.7S'C
v CEO 200 250 * 4 e

J 4 * 6
v CERfBE = 100n 225 275 NUMBER OF THERMAL CYCLES
v EBO 5
"C 7 Fig. 1 — Thermal-cycling ratings for RCA 1B04
'B •
2 and RCA 1B05.
PT
AtT c <25°C 150
I00
At T c > 25°C Dtratt liiwirly to 200°C
Tstg.Tj -65 to 200 *
TL I
•
\v v>
At distance > 1 /32 in. (0.8 mm) \N ^K.

from seating plane for 10 s max 230 °c 8
rV*
2
I
\
5
\ h
y "*
10
1 9
m\
n* "
\ 1 „»
^ i • < • 4

12CS- 29023
Fig. 2— Thermal-cycling rating chart for RCA 1B09.
^\ —
I0, - " H-J 1
6
ic< •ON
OISSIPATION-
J
'
7 «
T
'
1
T ^«
^* S I
c ^ 2 4 ^
\
Q.
<?
5
4N
f£ 1 .
%? 1 ' CASE TEMPERATURE (TC )-29*C
iv* .(CURVES MUST BE DERATED LINEARLY
a o.i-
s/b -LIMIT EC
v
n 2
1
1
VCE0 (MAX.I 290

1
1
1 ML 0.1
l
1 1 1 oxx 1 1 l
COLLECTOR-TO-EMITTER VOLTAGE 1V CE > COLLECTOR-TO-EMITTER VOLTAOE ( COLLECTOR-TO-EMITTER VOLTAOE (VC E>—
Fig. 3 - Maximum operating areas for RCA 1B04. Fig. 4 - Maximum operating areas for RCA 1B05. Fig. 5 - Maximum operating areas for RCA 1B09.
351
POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C
LIMITS
CHARAC-
TERISTIC TEST CONDITIONS RCA1B04A RCA1B05* RCA1B09** UNITS
VCE = 120 V, rbe = 100 n - 1

— —
'CER mA
Vce = 200V, RBE = 100fi 1 1
V EB = 5V,lc = - - 1
- 1 mA
'EBO 1
IC = 0.2A, Ib = 200 - 250 - 250 - V

VCEO
225 - 275 - 275 - V
VCER IC = 0.2 A, Rbe= 10012
IC = 0.2A, VcE = 10 V 5 — 5
MHz
*T
A,V C E V _ 5 -
IC = 1 = 15
hFE IC = 2A, VcE = 5V 15 75 15 75 40 -
IC = 2A, Ib = 0.255 A — 2 ~ 2 —
VCE(Sat) V
IC = 2A, Ib = 0.2A 1
VB E IC = 2A, VqE = 5 V 0.75 1.75 0.75 1.75 - 1 V

VC E = 120V,t=1 s 1.25
VCE = 140 V, t= 1 s
- 1.07 - - A
IS/b
VcE = 80 V, t = 1 s 1.875
A For characteristics curves and test conditions, refer to

,
published data for prototype 2N5239
* For characteristics curves and test conditons, refer to published data for prototype 2N5240
** For characteristics curves and test conditions refer to published data for prototype 2N6510
,
100-W Amplifier
to provide excellent high-power performance
The 100-W amplifier shown in Figs. 6 and 7 into an 8-12 load. With the exception of the
uses two RCA1B09 transistors as drivers and RCA-CA3100 Linear Integrated Circuit for
four RCA1B05 transistors as parallel units front end, this amplifier is entirely push-pull
in the amplifier output stages, and operates for improved high-frequency distortion and
on a 104-V split power supply. slew rate. Additional circuit features include
This 100-W amplifier [DC-Coupled (Fig.6) or new thermal overload protection and instant
AC-Coupled (Fig.7)] is conservatively designed turn-on with no undesirable transients.
NOTE: COMMON HEAT SINK-25IN 2 MIN. MCL- 26993
Fig. 6 — 100-W dc-coupled audio amplifier circuit featuring

parallel output transistors.
352
POWER TRANSISTORS
NOTE: COMMON HEAT SINK -25 IN* MIN.

92CL-2S992
OUTPUT HEAT SINK - 1°C/W PER OUTPUT TRANSISTOR SET IDLING CURRENT FOR 150 - 200 mA THROUGH 2 A FUSE.
NOTES: 4. K-1 Relay, single-pole, single-throw, normally

1. All resistors 1/2 W, 5% carbon unless specified. closed, with 24 V, 3 mAcoil.
2. All capacitances in n? unless specified. 5. TSS1 - 70°C thermal cutout, Elmwood Sensor
3. All resistors are non-inductive. Part No. 3450-157-37, or equivalent.
Fig. 7 — 100-W ac-coupled audio amplifier circuit featuring parallel output transistors.
NOTE:
Power Transformer: Signal BO-8
(Signal Transformer Co.. 1 Junius
St., Brooklyn, N.Y. 112t2),or
equivalent.
Fig. 8 — Power supply for 100-W audio amplifiers shown in Figs. 6 and 7.
120-W Amplifier This 120-W amplifier is especially designed

for top-of-the line quadrasonic use in ap-
The 120-W amplifier shown in Fig. 9 uses plications requiring 1/2 kW of quadrasonic
four RCA1B04 transistors as parallel units sound with excellent tonal quality. The
in the amplifier output stages, and oper- amplifier output is directly coupled to an
ates on a 130-V split power supply. 8-0 speaker.
353
POWER TRANSISTORS
iiDII
lioa
I50<
92CM- 2Z026R3
NOTES:
1. D1-D8 - 1N5391; D9.D10 - 1N914B; D11, and ZnO thermal compound (Dow Corning
No.340, or equivalent) with T"a = 45°C max.
D12-1N5393
2. Resistors are 1/2 W ± 10% unless otherwise Mount on heat sink, Wakefield No. 209-AB, or
specified; values are in ohms equivalent. (Alternatively, this type may be
3. Capacitances are in /IF unless otherwise speci- obtained with a factory-attached integral heat
fied. sink).
4. Non-inductive resistors Attach heat sink cap (Wakefield No.260-6SH5E,
5. Provide approx. 1°C/W heat sinking per output or equivalent) on device and mount on same
device based on mounting with mica washer heat sink with output transistor.
Fig. 9 — 1 20-W audio-amplifier circuit featuring parallel output transistors.
NOTES:
1. 93°C thermal cutout (attached to heat sink
for output transistors (Elmwood Sensor part
No. 2455-88-4), or equivalent.
2. Power transformer: Signal 88-6, Signal Trans-
former Co., 1 Junius St., Brooklyn, N.Y. 11212,
or equivalent.
Use 125-V primary tap.
Fig. 10 - Power supply for 1 20-W audio amplifier circuit shown in Fig. 9.
200-W Amplifier
The 200-W amplifier shown in Fig. 11 This 200-W amplifier is especially designed
uses eight RCA 1 B05 transistors, two as to feature ruggedness in combination with
drivers and six as parallel units in the ampli- high power output and excellent high fidelity
fier output stages, and operates on a 160-V performance. The amplifier output is di-
split power supply. rectly coupled to an 8-S2 speaker.
354
POWER TRANSISTORS
RCAIE02 RCAIB05
T If
NOTES: put device based on mounting with mica washer

1. D1-D8 - 1N5391; D9, D10 - 1N5316; D11, and ZnO thermal compound (Dow Corning
D12- 1N5393. No. 340, or equivalent) with T/v 45°C max.
2. Resistors are 1/2W ± 10% unless otherwise
6. Mount on heat sink, Wakefield No. 209-AB,
or equivalent. (Alternately, this type may be
specified, values are in ohms.
obtained with a factory-attached integral heat
3. Capacitances are in pF unless otherwise speci-
sink.)
fied.
7. Attach heat sink cap (Wakefield No. 260-
6SHSE, or equivalent) on device and mount
5. Provide approx. 1°C/W heat sinking per out- on same heat sink with output transistor.
Fig. 11 — 200-W audio amplifier circuit featuring paralle output transistors.
NOTES:
1. 90°C thermal cutout attached to heat sink
for output transistors.
2. Power transformer: Signal 120-8 (Signal Tran-
former Co., 1 Junius St., Brooklyn, N.Y.
11212), or equivalent. Use 125-V primary tap.
92CS-22042R3
Fig. 12 Power supply for 200-W audio amplifier circuit shown in Fig. 1 1.
300-W Amplifier
formance into either 8-J2 or 4-fi loads. With
The 300-W amplifier shown in Fig. 13
the exception of the RCA-CA3100 linear inte-
uses two RCA1B09 transistors as drivers
grated circuit for the front end, this amplifier
and sixteen RCA1B05 transistors as parallel is entirely push-pull for improved high-fre-
units in the amplifier output stages, and oper- quency distortion and slew rate. Additional
ates on a 172-V split power supply. circuit features include new thermal overload
This 300-W amplifier is conservatively de- and reactive overload protection and instant
signed to provide excellent high-power per- turn-on with no undesirable transients.
355
POWER TRANSISTORS

300 WATT AMPLIFIER
V IN IK
O-f-VW
i-
K IDLE CURRENT SET FOR SO mV ACROSS O.I a RESISTOR
920.-27233W
NOTES:
1. All resistors 1/2 W, 5% carbon unless specified.
2. All capacitances in microfarads unless specified.
3. All resistors are non-inductive.
4. K1 -Relay, single-pole, single-throw, normally
closed, with 24- V, 3 mA coil.
5. TSS1-70°C thermal cutout. Elm wood Sensor
Part No. 3450-157-37, or equivalent.
6. For dc-coupled version, delete 2,000-mF capaci-
tor,add 10-kfl potentiometer — see 100-W am-
plifier circuit Fig.9 (a).
7. Common heat sink — 25 in.2 minimum.
92CS-2723SRI
(b)
Fig. 13 - 300-W audio amplifier circuit featuring parallel output transistors:
(a) basic amplifier circuit, (b) protection circuit.
POWER TRANSFORMER SIGNAL 120-20

(SIGNAL TRANSFORMER CO. JANIUS ST.,
BROOKLYN, NY.M2I2), OR EQUIVALENT
92CS-27254R2
SI -20 -A CIRCUIT BREAKER
Fig. 14 — Power supply for 300-W audio-amplifier circuit

shown in Fig. 13.
356
—
POWER TRANSISTORS
RCA1B06
Silicon Transistor for 70-Watt TERMINAL DESIGNATIONS
Quasi-Complementary-Symmetry Audio
Amplifiers with Pi-Nu Output Transistors
RCA1B06isan n-p-n pi-nu silicon transistor in a RCA1B06 output device in conjunction with
JEDEC TO-3 package. This device is especially eleven other discrete transistors, thirteen diodes,
characterized for audio-amplifier applications, and a 90-volt split power supply. The ampli-
and can be driven by either RCA1C03 or fier output is an 8-ohm
directly coupled in
RCA1C04, n-p-n and p-n-p types, respectively. speaker. The high-frequency RCA1B06 output
The 70-watt amplifier shown in Fig. 1 uses the transistors used in the amplifier circuit produce
excellent transient response at a high power level. JEDEC TO-3
MAXIMUM RATINGS, Absolute-Maximum Values: RCA1B06
COLLECTOR-TO-BASE VOLTAGE V CB o 120 V
With base open Vqeo 100
With external base-to-emitter resistance (RflE* = lOOfl v £gR 120
EMITTER-TO-BASE VOLTAGE VgfjO
COLLECTOR CURRENT |
c
BASE CURRENT |
B
TRANSISTOR DISSIPATION: Py
At case temperatures up to 25 C
IOO
At case temperatures above 25 C
TEMPERATURE RANGE: Derate linearly to 200 C
i
At distances > 1 /32 in. (0.8 mm) from case for 10 s max
type RCA1B06
Package: JEDEC TO-3 CASE-TEMPERATURE
CHANGE JATe )-30 - C
Construction: Silicon n-p-n, epitaxial, multiple-emitter-site, pi-nu
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tcl=25°C o

Unless Otherwise Specified *
3
LIMITS
CHARACTERISTIC TEST CONDITIONS
MIN. MAX.
UNITS ,? kl50 \l25*c\lOO*C
\ 7! C
10
4

ICER Vce = 90 V, R B E = 1000 1 mA
VCEO IC = 0.2A, Ib = 100 _ V

Fig. 2— Thermal-cycling ratings for RCA 1B06.
fT ic = o.2A, vce = iov 5 - MHz
hFE IC = 4A, Vce=4V 10 50
VcE(»t) IC = 4A, B = 0.8A
l
- 2 V
VBE IC = 4A,Vce = 4V - 2 V
IS/b vce = so v, t - i s
For characteristics curves and test conditions, refer to published data for
1.87 - A
I
CASE TE«
^l
1
I
l—L-
— H-
H—
I I
prototype 2N5840
1
u 10
*
__I C MAX. (CONTINUOUS).

[
— i
™ =^^+1
IMITEO-H \ r-
i
"I
—- V
CE "AX. 100 V
0.I
i
SB
COLLECTOR-TO- EMITTER VOLTAGE IVCE>-
output
IUTP Fig. 3 — Maximum operating areas for RCA 1B06.
*—»-45V
NOTES: 3. Resistors are 1 /2-watt unless otherwise specified; values are in ohms.
1. 100 C thermal cutout attached to heat sink 4. Capacitances are in juF unless otherwise specified.
for output transistors TYPE I
(Elmwood Sensor part No. 2455-88-4).* 5. Non-inductive resistors.
9JCS- 220I9M
2. Power transformer: Signal 120-2 (parallel secondary).* Signal 6. D1-D8.011-1N5391
Transformer Co., 1 Junius St., Brooklyn, N.Y. 11212. D9. D10, D12, D13-1N5393 • Or equivalent.
Fig. 1 — 70-Watt amplifier circuit featuring quasi-complementary-symmetry output Fig. 4 — Power supply for 70-watt audio-
employing pi-nu construction output transistors. amplifier shown in Fig. 3.
357
POWER TRANSISTORS
RCA1C03, RCA1C04, RCA1C12, RCA1C13

Silicon Transistors for Audio-Frequency
Linear-Amplifier Applications
RCA1C03, RCA1C04, RCA1C12, and RCA1C13 are com- drivers. They may also be used in audio power amplifiers,
plementary silicon n-p-n and p-n-p transistors especially linear modulators, servo amplifiers, and operational amplifiers.
characterized for audio-amplifier applications. These devices, The units are supplied in the JEDEC TO-220AB version of the
singly or in pairs in complementary- or quasi-complementary- plastic VERSAWATT package.
symmetry circuits, are particularly useful as drivers or pre-
MAXIMUM RATINGS, Absolute-Maximum Values: RCA1C03 RCA1C04 RCA1C12 RCA1C13 BOTTOM VIEW
COLLECTOR-TO-BASE VOLTAGE V CB0 JEDEC TO-220AB
With base open ^CEO 100 -100 120 -120
With external base-to-emitter resistance (R BE ) = 100 H . . .
Vq^r 120 -120 140 -140
EMITTER-TO-BASE VOLTAGE V EB0 5 -5 5 -5 N-P-N Types P-N-P Types
CONTINUOUS COLLECTOR CURRENT c 4 -4 4 -4
I
-2 -2
RCA1C03 RCA1C04
CONTINUOUS BASE CURRENT Ig 2 2
RCA1C12 RCA1C13
At case temperatures above 25°C - Derate linearly to 150 C -
TEMPERATURE RANGE:
At distances ^ 1/32 in. (0.8 mm) from seating plane
for 10 s max °C
Type RCA1C03 Type RCA1C04

Package: JEDEC TO-220AB Package: JEDEC TO-220AB
Construction: Silicon n-p-n, epitaxial Construction: Silicon p-n-p, epitaxial
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tq) " ELECTRICAL CHARACTERISTICS, At Case Temperature ITC ) =
2!?C Unless Otherwise Specified 2^C Unless Otherwise Specified
LIMITS
LIMITS CHARACTERISTIC TEST CONDITIONS UNITS
CHARACTERISTIC TEST CONDITIONS UNITS MIN. MAX.
MIN. MAX.
= 110V, R B E = ioon mA 'CER vce = -iiov, Rbe = ioon -1 mA

'CER Vce 1
'EBO veb = -5v,i c = o _ -1 mA

lEBO VEB = 5V. !C =
_ 1 mA
VCEO = -0.1 A,l =0 -100 _ V
V C EO IC = 0.1 A, Ib = 100 _ V
l
c B
IC = -0.5A,Vce = -4V 10 - MHz
fT IC = 0.5 A, Vce = 4 V 4 - MHz *T
hFE ic - — i a, vce "-4 v 50 250
hFE IC = 1 A, VCE = 4 V 50 250
- -1
- VcElsat) ic = -i A, Ib = -0.1 A V
VcE(sat) IC = 1 A, Ib = 0.1 A 1 V -
- VBE ic = —i a, vce = -4 v -1.5 V
VB E IC = 1 A, VCE = 4V 1.5 V
vce = -40 v, t = 0.4 s -1 - A
Vce * 40 V, t = 0.4 s 1
- A IS/b
IS/b
For charachersistics curves and test conditions, refer to published
data for prototype 2N6476.
data for prototype 2N6293.
Type RCA1C13
Type RCA1C12
Package: JEDEC TO-220AB
Construction: Silicon p-n-p, epitaxial
Construction: Silicon n-p-n, epitaxial
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tcl =
25°C Unless Otherwise Specified 25°C Unless Otherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX. MIN. MAX.
V CE = 90 V, R BE = 100 n - 100 "A v CE = -90v, r be = ioo n - -100 uA

'CER 'CER
V EB = 5V,I C = - 1 mA V EB = -5V, c = - -1 mA
'EBO 'EBO l
= 0.1 A,l =0 120 - V V CEO -120 - V

v CEO l
c B l
c = -0-1 A,l B =
V CER = 0.1 A, R BE = 100 n 140 - V V CER = —0 A, R BE = 100 n -140 - V

l
c f
c 1
= 0.5 A, V CE = 4 V 4 - MHz fT = -0.5 A, V CE = -4 V 10 - MHz

<T
l
c l
c
"FE I
C =1A,V CE = 2V 40 250 "FE I
C = -1 A,V CE = -2V 40 250
=1A,V CE 2V - V -2V -
VB E I
C = 1.2 VBE l
c = _1 A,V CE = -1.2 V
V CE = 60 V, t = 0.4 s 0.66 - A V CE = -60 V, t = 0.4 s -0.66 - A

'S/b 'S/b
data for prototype 2N6474. data for prototype 2N6476.
358
POWER TRANSISTORS
RCA1C05, RCA1C06
Silicon Transistors for 25-Watt
Full-Complementary-Symmetry
Audio Amplifiers /a
RCA1C05 and RCA1C06 are n-p-n and p-n-p epitaxial-base tion with seven TO-39 discrete transistors, ten diodes, and a
silicon power transistors, respectively. These complementary 52-volt split power supply. The amplifier output is directly
output devices for audio applications are provided in the coupled to an 8-ohm speaker. The full-complementary-
JEDEC TO-220A8 plastic package. symmetry output stage provides excellent high-frequency
BOTTOM VIEW £
92CS-275I9
The 25-watt audio-amplifier circuit shown in performance at moderate cost.
Fig. 4
uses RCA1C05 and RCA1C06 as output devices in conjunc-
JEDEC TO-220AB

COLLECTOR-TO- EMITTER VOLTAGE:
With base open v CEO
With external base-to-emitter resistance (R BE ) = 100fl V CER
COLLECTOR CURRENT I
c
BASE CURRENT I
B P T (MAX.)*40W
*
At case temperatures up to 26 C I

TEMPERATURE RANGE:
Derate linearly to 150
-65 to +1 50
C
& VAl
At distances ^1/32 in. (0.8 mm) from case of 10 s max \\ \
^
—if k
\
\ \\\ vC°-x
s /
Type RCA1C05
i
1r! V \ v\°X\
Construction: Silicon n-p-n, epitaxial base NUMBER OF THERMAL CYCLES
SZCS-I8005RI
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tel '
Fig. 1 — Thermal-cycling ratings for RCA 1C05
25°C Unless Otherwise Specified
and RCA1C06.
LIMITS
MIN. MAX.
ICER V CE -50V,R BE »100fi _ 1 mA
'EBO V BE = 5V,I C =0 _ 1 mA
VCER l
c *».1 A,R BE »100Ji 60 _ V
IC = 0.1 A.VCE-4V 4 - MHz
*T
"FE l
C = 3A,V CE «4V 20 120
V CE (sat) l
C -3A,l 8 -0.3A - 1 V
VB E l
c «3A.V CE -4V - 1.5 V
V CE -20V,t"0.5s 2 - A
'S/b
For characteristics curves end test conditions, refer to published data for prototype 2N6292
Type RCA1C06 Fig. 2 - Maximum operating areas for RCA 1C05.

Construction: Silicon p-n-p, epitaxial base
ELECTRICAL CHARACTERISTICS, -4f Case Temperature ITqI '

25 C Unless Otherwise Specified
LIMITS
MIN. MAX.
!CER V CE --60V,R B £-10on _ -1 mA
<EBO V EB = -5V,I C .0 _ -1 mA
V CER l
C - -0.1 A,R BE - 10012 -60 _ V
<T l --4V
C --0.1 A,V CE 10 - MHz
"FE l
C --3A,V CE --4V 20 120
V CE (satl l
C --3A,l B --0.3A - -1 V
VBE l
C "-3A,V CE --4V - -1.5 V
iS/b V CE --20V,t-0.5s -2 - A
For characteristics curvet and test conditions, refer to
published data for prototype 2N6107 (File 488). Fig. 3 — Maximum operating areas for RCA 1C06.
359
POWER TRANSISTORS
RCA1C05, RCA1C06
80* C THEHMAl
NOTES:
1. T: Signal 36-2 # Signal Transformer Co,
,
1 Junius St., Brooklyn, N.Y. 11212

2. Resistors are 1 /2-watt unless otherwise
specified; values are in ohms.
3. Capacitances are in fjF unless otherwise
specified.
• Or equivalent. —TT"" V
Fig. 4 — 25-watt amplifier circuit featuring true-complementary-symmetry output with load line limiting.
360
, POWER TRANSISTORS
RCA1C07, RCA1C08
Silicon Transistors for 40-Watt
Full-Complementary-Symmetry //
Audio Amplifiers
RCA1C07 and RCA1C08 are n-p-n and p-n-p epitaxial-base RCA1C07 and RCA1C08 in conjunction with seven TO-39
silicon power transistors, respectively, especially suitable for transistors, ten diodes, and a 64-volt split power supply. The BOTTOM VIEW
audio-output applications. These devices are provided in the amplifier output is directly coupled to an 8-ohm speaker. 92CS-275I9
economical JEDEC TO-220AB version of the VERSAWATT The high-frequency performance of this 40-watt amplifier
package. will provide excellent reproduction for the most critical JEDEC TO-220AB
listener.
The 40-watt amplifier shown in Fig. 3 uses the
RCA1C07 RCA1C08
COLLECTOR-TO-BASE-VOLTAGE V CB0
COLLECTOR-TO-EMITTER VOLTAGE: P T (MAX.)*40W 1

*
With external base-to-emitter resistance (R BE ) ~ 10012 V CER I
EMITTER-TO-BASE VOLTAGE v EBO

\\
COLLECTOR CURRENT
BASE CURRENT
\
'
\s Cvu-
^
At case temperatures up to 25 C 78 75 5 • \\ Â&
TEMPERATURE RANGE:
Derate linearly to 150°C i
v,vw.
\\\
At distances >1/32 in. (0.8 mm) from case for 10 s
•
•m
65 to 150
230
1»
•»
I
ti \°
\
V vmv
Type RCA1C07
Package: JEDEC TO-220AB NUMBER OF THERMAL CYCLES
92CS-I8003RI
Construction: Silicon n-p-n, epitaxial base
ELECTRICAL CHARACTERISTICS, At Case Temperature (T ) *

c Fig. 1 — Thermal-cycling ratings for
25° C Unless Otherwise Specified RCA 1 CQ7 and RCA 1 C08.
LIMITS
MIN. MAX.
V CE = 65V, R BE - 10012 _ 1 mA
'CER
'
J"' '
V BE -5V,l C -0 _ 1 mA •
'EBO
•
VCER l
c = 0.1A,R BE = 100£2 75 _ V 4
- MHz
'T l
C -1 A, V CE -4V 5
"FE l
c = 4A,V CE =4V 20 120 < t
Vcelsat) IC=4A,I B «0.4A - 1 V Xc (M kx) CON INU< US
""
VBE I
C = 4A,V CE =4V - 1.5 V n- >•*
/*'**
^l '*yf%
'S/b V C E-30V,t»0.5s 2.S - A i
• 1
^&> ^
For characteristics curves and test conditions, refer to published data for prototype 2N6292 s
£ 3
* — -r 1
"Tv/
r? »
i
1 ^ 5.
—r
i
i
vV
Type RCA1C08 1
X wT
Construction: Silicon p-n-p, epitaxial base o 1
1
VCE0 MAX. « 65 V —
ELECTRICAL CHARACTERISTICS. At Case Tempereture ITC) ' t
1
25° C Unless Otherwise Specified 0.1 1
i i
CHARACTERISTIC TEST CONDITIONS

LIMITS
MIN. MAX.
UNITS
1! 1
•u'JI 8
29 i
*m »i
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V ttCS-tl*73ftl
ICER V C E * -65V, R BE = 100J2 _ -1 mA
For p-n-p device, voltage and current
!EBO V EB --5V,I C = _ -1 mA are negative.
V CER = -0.1A,R BE = 10012 -75 _ V

c
2 - Maximum operating areas for
l
- Fig.
«T IC = -1 A. V CE --4V 5 MHz
hFE IC 4A,V CE --4V 20 120
RCA 1 C07 and RCA 1 C08.
V c6 (sat) l
C = -4A,l B --0.4A - -1 V
VBE I
C ._4A,V CE = -4V - -1.5 V
'S/b V C E -30V. t- 0.5 s -2.5 - A

s and test conditions, refer to published date for prototype
361
POWER TRANSISTORS
RCA1C07, RCA1C08
•*wwr
r?" ij —iTv
»
NOTES:
1. T: Skjnal 88-2 (parallal lacondary)*,
Signal Trantformar Co., 1 Junlua St.,
Brooklyn, N.Y. 11212
2. Raalatort art /2-w«tt unlaa otharwiaa
1
pacif lad; valuai art In ohma.

3. Capacltanon ara In yf unlaaa otharwiaa
•paciflad.
4. Non-lnductlva raalatort.
*Or aqulvalant.
Fig. 3 - 40-Watt amplifier circuit featuring full-complementary-symmetry

output using load line limiting.
362
.
POWER TRANSISTORS
RCA1C09
Silicon Transistor for 40-Watt
Quasi-Complementary-Symmetry Audio Amplifiers
RCA1C09 is an n-p-n, hometaxial-base silicon transistor The 40-watt amplifier shown in Fig. 3 uses two
packaged in the JEDEC TO-220AB (VERSAWATT) case. RCA1C09 transistors as output units in conjunction with
Two of these devices, driven in the class-B mode by the seven TO-39 transistors, 1 1 diodes, and a 64-volt split power
RCA1A06 and RCA1A05 silicon n-p-n and p-n-p transistors, supply. The amplifier output is directly coupled to an 8-ohm TERMINAL DESIGNATIONS
can be used as output devices in audio-amplifier applications. speaker. This 40-watt amplifier features ruggedness and
economy in the mid-power range.
RCA1C09
COLLECTOR-TO-BASE VOLTAGE V
vrCBO
With external base-to-emitter resistance (R V CER
BE - 100S2 )
"EBO
BOTTOM VIEW
COLLECTOR CURRENT 92CS-275I9
BASE CURRENT |g
TRANSISTOR DISSIPATION: PT JEDEC TO-220AB
TEMPERATURE RANGE:
At distances>1/32 in. (0.8 mm) from case for 10 s max 230
Type RCA1C09
Construction: Silicon n-p-n, hometaxial base

LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS P T <MAX.)>40W
MIN. MAX.
*
V CE =65V,R BE =10OJ2 mA
| £%
h
1
'CER
l0
V EB = 5V.I C = - 1 mA \ â*^
'EBO
\\ Â&
V CER l
c = 0.2A,R BE = 100Ji 75 - V {
\ ^v\v
4V -
c = 0.5A,V CE MHz
y\ \\%
l = 0.8
*T
"FE l
c = 4A,V CE = 4V 20 120
V CE (sat)
VB E
l
l
c = 4A,l B = 0.4A
C = 4A,V CE = 4V
-
-
1
1.5
V
V
i
r WKv
'S/b
V CE = 40V,t=0.5s 1.87 - A
For characteristics curves and test conditions, refer to published Fig. 2 — Thermal -cycling ratings for RCA1C09.
THERMAL
T'UTOUT
| , —
NOTES:
1. T: Signal 88-2 .parallel secondary)*,
Signal Transformer Co., 1 Junius St.,
Brooklyn, N.Y. 11212
2. Resistors are /2-watt unless otherwise
1

3. Capacitances are in /iF unless otherwise
specified.
1
Or equivalent.
Fig. 1 — 40-Watt amplifier circuit featuring quasi-complementary-symmetry output. Fig. 3 — Maximum operating areas for RCA 1C09.
363
POWER TRANSISTORS
RCA1C10, RCA1C11
Silicon Transistors for 12- Watt True-Complementary-
Symmetry Audio Amplifers TERMINAL DESIGNATIONS
RCA1C10 and RCA1C1 1 are n-p-n and p-n-p epitaxial-base RCA1C10 and RCA1C11 discrete transistors, an integrated
silicon power transistors, respectively, especially character- circuit, one diode, and a 36-volt split power supply; the
ized for audio-output service. To enhance circuit economics, amplifier output is directly coupled to an 8-ohm speaker.
they are provided in the JEDEC TO-220AB version of the The integrated circuit-true-complementary-symmetry com-
VERSAWATT plastic package. bination provides a high-quality, low-cost amplifier.
The 12- watt audio amplifier circuit shown in Fig. 4 The RCA CA3094AT integrated circuit provides sufficient BOTTOM VIEW
uses RCA1C10 and RCA1C11 as output devices in con- drive current for the complementary-symmetry output stage. 92CS-275I9
junction with three discrete transistors, two diodes, and a Tone controls, bass and treble, with functions of "boost"
single 36-volt power supply; the amplifier output is and "cut" are incorporated into the feedback loop of the JEDEC TO-220AB
capacitively coupled to an 8-ohm speaker. The choice of a amplifier, resulting in excellent signal-to-noise ratio and
true-complementary-symmetry output stage provides excel- freedom from distortion. Ratings and characteristics of type
lent fidelity for a low-cost system. CA3094AT are given in RCA data bulletin File 598.
The 12-watt amplifier circuit shown in Fig. 5 uses
RCA1C10 RCA1C11
COLLECTOR-TO-BASE VOLTAGE V CB0 40 -40
With bate open v CEO 40 -40
With external base-to-emitter resistance (Rbe' " 10°fl V ceR 50 -60
COLLECTOR CURRENT I
c
BASE CURRENT I
B
TRANSISTOR DISSIPATION: P
T
At case temperatures up to 25 C 40 40
Derate linearly to 150°C
TEMPERATURE RANGE:
Storage ft Operating (Junction) -« 65 to 150 »-
At distances ^1/32 in. (0J3 mm) from case for 10 s max -« 230 »
Typa RCA1C10 TypeRCA1C11

Package): JEDEC TO-220AB Package: JEDEC TO-220AB
Construction: Silicon n-p-n, epitaxial-base
Construction: Silicon p-n-p, epitaxial base
ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) -

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) -
25°C Unless Otherwise Specified 2&C Unless Otherwise Specified
LIMITS* LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS TEST CONDITIONS UNITS
MIN. MAX. CHARACTERISTIC
MIN. MAX.
'CER V CE - 35 V. R BE - ioon 10 »iA v CE = -35 v, r be = ioon - -10 HA

'CER
'ebo V EB = 5V _ 1 mA V EB = -5V - -1 mA
'ebo
VCEO = 0.1A.I = 40 _ V -40 - V

I
C B VCEO l
c = -0.1 A,
B =l
VCER c = o.ia, R BE -ioon 50 _ V v Cer -50 - V

c - -o.i a, r be - ioon
i
i
*T Vce - 4 V, c - 0.5 A l 4 - MHz V CE --4V. C = -0.5A 10 - MHz

*r I
"FE c -1.5A,V CE =.4V

l 50 250 "FE l
c --1.5A.V CE --4V 50 250
v CE <»t) - V
l
c -1.5A, B - 0.075 A
l 1 V V CE (sat) l
c »-1.5A, B -0.075 A
- l
-1
VB E - --4V - V
l
C -1.5A.V CE = 4V 1.5 V VB E I
C --1.5A,V CE -1.5
'S/b V CE - 20 V, t - 0.4 s 2 - A 'S/b V CE = -20 V, t » 0.4 s -2 - A

For characteristics curves and test conditions, refer to published data for For characteristics curves and test conditions, rerer to published data for
prototype 2N6292 prototype 2N6107
364
POWER TRANSISTORS
RCA1C10, RCA1C11
PT IMAX.)-40W 1—
I IO
Ic MAX- (CONTINUOUS) CASE. TEMPERATURE (T-J »*C -IC MAX.(CONTINUOUS) CA8C TWCBATOMtTc- •jrc
i 1
\&. _ «f
1
4 pv 1
>,v
\\
kc& N?o
1
1
s^
>/>
5 *
O /
\ SS& § ,_ _,_.
— 1
| -V
L
V I s/b -LIMITEO
~l— —
O
1—
SI \
\ r t -0.2
1
1
1
i v \ vVKv 0.1 1
Ie
5.7 10
»CEO MAX.* 70 V 1—
2
40
1
6 >
70 100
i
- 3
I
I 1
1
»C€0 MAX..-TOV
1
l«
1
NUMBER OF THERMAL CYCLES COLLECTOR-TO-EMITTER VOLTASE (VCE >— V

»2CS-ie009RI •2CS-2I473
Fig. 1 - Thermal-cycling ratings for RCA 1C10 Fig. 2 - Maximum operating areas for RCA tCtO. Fig. 3 - Maximum operating areas for RCA 1C1 1.
andRCAWU.
IOuF-l*
I
t 50V Ti
\ 25.5V
: iA°dc
l I Ky\
IOO0/.F
50 V
—
NOTES:
1 T: Thordarson 23V1 18. Stancor TP4. Triad
F-93X, or equivalent (for Stereo
Amplifiers).
3. Capacitances are in JUT unless otherwise
specified.
Fig. 4 — 1 2-watt amplifier circuit featuring complementary-symmetry output.
NOTES:
1. T: Stancor No.P-8609 1120 VAC to
26.8 V CT @ 1 A) or equivalent
2. FOR STANDARD INPUT: Short C2;
R-l = 250 K; C1 - 0.047 flF; Remove R2
3. FOR CERAMIC-CARTRIDGE INPUT:
C, - 0.0047 (JF; R] = 2.5 Mfi Remove
Jumper from C2; Leave R2.
4. D1 1N5392
6. Capacitances are in /JF unless otherwise
specified.
Fig. 5 — 1 2-watt amplifier circuit featuring an integrated-circuit driver and a true-complementary-

symmetry output stage.
365
POWER TRANSISTORS
RCA1C14
Silicon Transistor for 25-Watt Quasi-Complementary-
Symmetry Audio Amplifiers TERMINAL DESIGNATIONS
RCA1C14isan n-p-n hometaxial-base silicon power transistor uses two RCA1C14 transistors in conjunction with seven
provided in the JEDEC TO-220AB package. This device is TO-39 low-level audio transistors, 11 diodes, and a 52 volt
ideally suited for use in the output stage of quasi- split supply. The amplifier output is directly coupled to an
complementary-symmetry audio amplifiers 8-ohm speaker. Ruggedness and economy are features of this
The 25-watt audio-amplifier high fidelity amplifier.
circuit shown in Fig. 2

BOTTOM VIEW
COLLECTOR-TO-BASE VOLTAGE
COLLECTOR-TO-EMITTER VOLTAGE: JEDEC TO-220AB
With base open
CEO
With external base-to-emitter resistance (Rg^) = 100H CER
EMITTER-TO-BASE VOLTAGE V EBO
COLLECTOR CURRENT
BASE CURRENT
At case temperatures above 25°C .... Derate linearly to 150°C

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Power

tributors. State Sunbury-pn-Thames Taipei Tehran Tokyo

Copyright 1978 by RCA Corporation

1N248C 576 R 6 2N1479* 60 PT 135 2N3651 564 SCR 408

BR = Bridge rectifier PH = Power hybrid circuit RF = RF power transistor

RCP705 30 50 min. 0.500 4 10 2 50 80 ns 800 ns* TO-202AB RCP704

Current Gain Sw. Ti mes A

Type No. VcEO( sus ) hFE «C VCE PT ic fT tON I tf Package p-n-p

lc(Max.) = 2.5to5A,fT 0.2 to 2 MHz

40 20-60 0.750 4 25 3 0.8 1.2 1.1 TO-8

2N6260 40 3 min 4 2 29 3 0.8 TO-66

140 10 10 2 250 20 2 TO-204MA MJ15004

IC= 2.5 to S A, f j = 3 to 25 MHz

25 min. 4 40 5 3 0.4 1.2* TO-220AB TIP32

45 15 min. 4 30 4 3 TO-220AB BD240

BD241B 80 25 min. 1 4 40 5 3 TO-220AB BD242B

Current Gain Sw. Timet*

Check availability in Europe, the Middle East, and Africa. ®t r

Power Transistor Selection Charts

Current Gain Sw. Times A

Type No. VcEO(sus) hFE ic VCE pt ic fT tON tf Package p-n-p

IC = 6 to 10 A, fj = 2.5 to 25 MHz (cont'd)

2N6249 200 10-50 10 3 175 10 8 0.8 @ 0.5 TO-3

Power Transistor Selection Charts

Current Gain Sw. Times*

IC = 12 to 20 A, fj = 0.2 to 2 MHz (cont'd)

Power Transistor Selection Charts

Current Gain Sw. Times*

IC (Max.) - 8 A, fuNITY GAIN " 20 MHz for all types

P-N-P MONOLITHIC DARLINGTON TRANSISTORS

vceo(m») hpE ic VC E ,PT ic

Check availability in Europe, the Middle East, and Africa

P-N-P MONOLITHIC DARLINGTON TRANSISTORS (cont'd)

VcEO< sus ) hFE "C VCE PT •c

RESISTANCE VALUES IN OHMS

HC2000H* - Applications HC2500 - Applications

Ratings and Features for HC2000H* and HC2500

SUPPLY VOLTAGE: Bandwidth: 30 kHz at 60 W

IM DlST. OUTPUT OPERATING FREQUENCY

HC2500 0.06% NO CLASS AB CAPACITOR ON NO

* HC2000H also available to MIL-spec as HC2000H/1, 2, 3, 4.

200 548 2N2857 450 4.5 6 12.5

40936 TO-60 28 30 20 (PEP) 551

RCA TO-205MA/TO-5 Mod. TO-205MA/TO-5 With TO-202AB

'T(RMS) 0.5A 0.5 A

c VDROM(V) 200 T2304B T2305B

a> VDROM(V) 100

•ISOWATT — Mounting tab electrically isolated from electrodes only

RCA TO-220AB Press- Fit

'T(RMS) 8A 12A 12A 12A 12A 10A 15A 10 15

'T(RMS) 6A 10A 15A 6A 10A 15A

Triac Product Matrix

VDROM<V) 200 T6006B T6407B T6406B T6417B T6416B T6427B T6426B

'T(RMS) 25A 40A 25A 25A 40A

With flex, leads, With flex, leads,

RCA encap. on iso- Isolated on encap., isolated Overmold

Ir(RMS) 7A 3.3A 7A 8A 10A 12 16 12.5 20A 35A

SCR Product Matrix

RCA Isolated encap. on iso- Isolated on encap., isolated

SCR's Stud Stud lated stud TO-3 flange on TO-3 flange

SCR's TO-208MA/TO-48 Stud Stud

Modulator FTO* FTO # FTO*

•FTO- Fast Turn-Off ASCR (Asymmetrical Silicon Controlled Rectifiers)

ITR Product Matrix