R6006ANX: V 6A 600V 1.2 R (Max.) I P

R6006ANX
Nch 600V 6A Power MOSFET Datasheet
lOutline
VDSS 600V TO-220FM
RDS(on) (Max.) 1.2W
ID 6A
PD 40W
or
(1)(2)(3)
lFeatures lInner circuit

1) Low on-resistance.
f
2) Fast switching speed. (1) Gate
ns d
(2) Drain
3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source
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4) Drive circuits can be simple. *1 Body Diode
5) Parallel use is easy.

6) Pb-free lead plating ; RoHS compliant
es en lPackaging specifications
Packing Bulk
Reel size (mm) -
m
lApplication Tape width (mm) -

Type
Basic ordering unit (pcs) 500
ew m
Switching Power Supply

Taping code -
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Marking R6006ANX
D
lAbsolute maximum ratings (Ta = 25C)

Parameter Symbol Value Unit
e
Drain - Source voltage VDSS 600 V

R
Tc = 25C ID *1 6 A
Continuous drain current
Tc = 100C ID *1 2.9 A
ot
*2
Pulsed drain current ID,pulse 24 A
Gate - Source voltage VGSS 30 V
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Avalanche energy, single pulse EAS *3 2.4 mJ

Avalanche energy, repetitive EAR *4 1.9 mJ
Avalanche current IAR *3 3 A
Power dissipation (Tc = 25C) PD 40 W
Junction temperature Tj 150 C
Range of storage temperature Tstg -55 to +150 C
Reverse diode dv/dt dv/dt *5 15 V/ns
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© 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.01 - Rev.B
R6006ANX Data Sheet
lAbsolute maximum ratings

Parameter Symbol Conditions Values Unit
VDS = 480V, ID = 6A
Drain - Source voltage slope dv/dt 50 V/ns
Tj = 125C
or
lThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
f
Thermal resistance, junction - case RthJC - - 3.125 C/W
ns d
Thermal resistance, junction - ambient RthJA - - 70 C/W
ig de
Soldering temperature, wavesoldering for 10s Tsold - - 265 C
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lElectrical characteristics (Ta = 25C)
Values
m
Parameter Symbol Conditions Unit

Min. Typ. Max.
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Drain - Source breakdown

V(BR)DSS VGS = 0V, ID = 1mA 600 - - V
voltage
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Drain - Source avalanche

V(BR)DS VGS = 0V, ID = 6A - 700 - V
breakdown voltage
e
VDS = 600V, VGS = 0V

Zero gate voltage
R
IDSS Tj = 25C - 0.1 100 mA

drain current
Tj = 125°C - - 1000
ot
Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA
Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 2.5 - 4.5 V
N
VGS = 10V, ID = 3A
Static drain - source
RDS(on) *6 Tj = 25C - 0.9 1.2 W
on - state resistance
Tj = 125°C - 1.9 -
Gate input resistance RG f = 1MHz, open drain - 7.6 - W
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R6006ANX Data Sheet
lElectrical characteristics (Ta = 25C)

Values
Min. Typ. Max.
Transconductance gfs *6 VDS = 10V, ID = 3.0A 1.7 3.5 - S
Input capacitance Ciss VGS = 0V - 520 -
Output capacitance Coss VDS = 25V - 380 - pF
or
Reverse transfer capacitance Crss f = 1MHz - 25 -
f
Effective output capacitance,
Co(er) - 25 -
energy related
VGS = 0V
ns d
pF
VDS = 0V to 480V
Effective output capacitance,
ig de
Co(tr) - 25 -
time related
Turn - on delay time td(on) *6 VDD ⋍ 300V, VGS = 10V - 22 -
Rise time
es en tr *6 ID = 3A - 18 -
ns
Turn - off delay time td(off) *6 RL = 100W - 50 100
Fall time tf *6 RG = 10W - 35 70

m
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lGate Charge characteristics (Ta = 25C)

Values
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Min. Typ. Max.
Total gate charge Qg *6 VDD ⋍ 300V - 15 -

e
Gate - Source charge Qgs *6 ID = 6A - 4 - nC

R
Gate - Drain charge Qgd *6 VGS = 10V - 6 -
Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 6A - 6.0 - V

ot
*1 Limited only by maximum temperature allowed.

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*2 PW  10ms, Duty cycle  1%

*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25C

*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25 C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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R6006ANX Data Sheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25C)

Values
Min. Typ. Max.
Inverse diode continuous,

IS *1 - - 6 A
forward current
Tc = 25C
or
Inverse diode direct current,
ISM *2 - - 24 A
pulsed
Forward voltage VSD *6 VGS = 0V, IS = 6A - - 1.5 V
f
Reverse recovery time trr *6 - 302 - ns
ns d
IS = 6A
Reverse recovery charge Qrr *6 - 2.0 - mC
di/dt = 100A/ms
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Peak reverse recovery current Irrm *6 - 13 - A
Peak rate of fall of reverse

es en dirr/dt Tj = 25C - 300 - A/ms
recovery current
m
lTypical Transient Thermal Characteristics

ew m
Symbol Value Unit Symbol Value Unit

Rth1 0.342 Cth1 0.00138
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Rth2 1.15 K/W Cth2 0.0146 Ws/K

Rth3 2.19 Cth3 0.452
e
R
ot
N
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R6006ANX Data Sheet
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
120 100
Power Dissipation : PD/PD max. [%]
100
Operation in this
or
10 area is limited
80 by RDS(ON)
Drain Current : ID [A]
f
60 1
PW = 100us
ns d
PW = 1ms
40
PW = 10ms
0.1
ig de
20
Ta = 25ºC
Single Pulse
0 0.01
0 es en
50 100
Junction Temperature : Tj [°C]
150 200 0.1 1 10 100
Drain - Source Voltage : VDS [V]
1000
m
Fig.3 Normalized Transient Thermal

ew m
Resistance vs. Pulse Width

Normalized Transient Thermal Resistance : r(t)
1000
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D
Ta = 25ºC
100 Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
10 Rth(ch-a) = 70ºC/W
e
R
0.1
ot
top D = 1
0.01 D = 0.5
D = 0.1
0.001 D = 0.05
D = 0.01
N
D = Single
0.0001
0.0001 0.01 1 100
Pulse Width : PW [s]
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R6006ANX Data Sheet
Fig.4 Avalanche Current vs Inductive Load Fig.5 Avalanche Power Losses
4 3000
Ta = 25ºC
VDD=50V,RG=25Ω Ta = 25ºC
Avalanche Power Losses : PAR [W]

VGF=10V,VGR=0V 2500
or
Avalanche Current : IAR [A]
3
2000
f
2 1500
ns d
1000
ig de
1
500
0 es en 0
0.01 0.1 1 10 100 1.0E+04 1.0E+05 1.0E+06
Coil Inductance : L [mH] Frequency : f [Hz]
m
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Fig.6 Avalanche Energy Derating Curve

vs Junction Temperature
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120
D
Avalanche Energy : EAS / EAS max. [%]
100
e
80
R
60
ot
40
20
N
0
0 25 50 75 100 125 150 175
Junction Temperature : Tj [ºC]
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R6006ANX Data Sheet
Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)
6 5
10.0V 10.0V
6.0V Ta = 25ºC
5 8.0V Pulsed 8.0V
4
or
7.0V Ta = 25ºC 7.0V
6.5V Pulsed
4 6.5V

5.5V 3
6.0V
f
3
5.5V
ns d
2
2
5.0V 5.0V
ig de
1
1
VGS= 4.5V VGS= 4.5V
0 0
0 es en
5 10 15

20 0 1 2 3 4

5
m
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Fig.9 Tj = 150°C Typical Output Fig.10 Tj = 150°C Typical Output

Characteristics(I) Characteristics(II)
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6 3
D
Ta = 150ºC 10V 6.5V Ta = 150ºC

Pulsed 8.0V Pulsed
5
7.0V
6.0V 10V
e
4 2 6.5V
5.5V
R
5.5V
3
VGS= 4.5V
ot
2 1
VGS = 4.5V
1
N
0 0
0 5 10 15 20 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
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R6006ANX Data Sheet
Fig.11 Breakdown Voltage Fig.12 Typical Transfer Characteristics

vs. Junction Temperature
Drain - Source Breakdown Voltage : V(BR)DSS [V]
900 100
VDS = 10V
850 Pulsed
10
or
800

750 1
f
700 Ta = 125ºC
0.1 Ta = 75ºC
ns d
650 Ta = 25ºC
Ta = -25ºC
600
ig de
0.01
550
500 0.001
-50 es en
0 50 100
Junction Temperature : Tj [°C]

150 0 2 4 6
Gate - Source Voltage : VGS [V]

8
m
ew m
Fig.13 Gate Threshold Voltage Fig.14 Transconductance vs. Drain Current

vs. Junction Temperature
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6 100
D
VDS = 10V
VDS = 10V
Gate Threshold Voltage : VGS(th) [V]
5 ID = 1mA
10 Pulsed
Transconductance : gfs [S]
e
4
1
R
3
0.1
Ta = -25ºC
ot
2 Ta = 25ºC
Ta = 75ºC
0.01 Ta = 125ºC
1
N
0 0.001
-50 0 50 100 150 0.001 0.01 0.1 1 10
Junction Temperature : Tj [°C] Drain Current : ID [A]
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R6006ANX Data Sheet
Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Gate Source Voltage Resistance vs. Junction Temperature
3 3
Static Drain - Source On-State Resistance

Ta = 25ºC VGS = 10V

2.5 Pulsed 2.5 Pulsed
or
2 2
f
ID= 6.0A
: RDS(on) [Ω]
: RDS(on) [Ω]
1.5 1.5
ID = 6.0A
ns d
1 1 ID= 3.0A
ig de
ID = 3.0A
0.5 0.5
0 es en 0
0 5 10 15 -50 0 50 100 150
Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

m
ew m
Fig.17 Static Drain - Source On - State

Resistance vs. Drain Current
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10
D
VGS = 10V
Pulsed
e
R
: RDS(on) [Ω]
1
ot
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
N
Ta = -25ºC
0
0.001 0.01 0.1 1 10 100
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R6006ANX Data Sheet
Fig.18 Typical Capacitance Fig.19 Coss Stored Energy

vs. Drain - Source Voltage
10000 4.0
Ta = 25ºC
or
Coss Stored Energy : EOSS [uJ]
1000 Ciss
Capacitance : C [pF]
f
100 Coss 2.0
Crss
ns d
ig de
10
Ta = 25ºC
f = 1MHz
VGS = 0V
1 0.0
0.1
es en 1 10

100 1000 0 200 400 600

m
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Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics

N co
10000
D
Ta = 25ºC Ta = 25ºC
VDD ⋍ 300V VDD ⋍ 300V
VGS = 10V 10
Gate - Source Voltage : VGS [V]
1000 tf ID = 6A
RG = 10Ω
e
RG = 10Ω
Switching Time : t [ns]
Pulsed Pulsed
R
td(off)
100
5
ot
10
tr td(on)
N
1 0
0.01 0.1 1 10 100 0 5 10 15 20
Drain Current : ID [A] Total Gate Charge : Qg [nC]
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R6006ANX Data Sheet
Fig.22 Inverse Diode Forward Current Fig.23 Reverse Recovery Time

vs. Source - Drain Voltage vs.Inverse Diode Forward Current
100 1000
Inverse Diode Forward Current : IS [A]
VGS = 0V
Pulsed
Reverse Recovery Time : trr [ns]
or
10
Ta = 125ºC
Ta = 75ºC
f
Ta = 25ºC
1 Ta = -25ºC 100
ns d
ig de
0.1 Ta = 25ºC
di / dt = 100A / μs
VGS = 0V
Pulsed
0.01 es en 10
0 0.5 1 1.5 0.1 1 10
Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A]
m
ew m
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e
R
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R6006ANX Data Sheet
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms
f or
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
ns d
ig de
es en
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
m
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Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform

e
R
ot
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Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
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R6006ANX Data Sheet
lDimensions (Unit : mm)
D E
TO-220FM A
E1
φp
or
A4
f
A2
ns d
ig de
A1
b1
es en Q
m L
ew m
e c
N co
b
D
x A
MILIMETERS INCHES
e
DIM
MIN MAX MIN MAX
A 16.60 17.60 0.654 0.693
R
A1 1.80 2.20 0.071 0.087

A2 14.80 15.40 0.583 0.606
A4 6.80 7.20 0.268 0.283
ot
b 0.70 0.85 0.028 0.033

b1 1.10 1.50 0.043 0.059
c 0.70 0.85 0.028 0.033
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D 9.90 10.30 0.39 0.406

E 4.40 4.80 0.173 0.189
e 2.54 0.10
E1 2.70 3.00 0.106 0.118
F 2.80 3.20 0.11 0.126
L 11.50 12.50 0.453 0.492
p 3.00 3.40 0.118 0.134
Q 2.10 3.10 0.083 0.122
x - 0.381 - 0.015
Dimension in mm/inches
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Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
or
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
f
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
ns d
Great care was taken in ensuring the accuracy of the information specified in this document.
ig de
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
es en
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
m
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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D
against the possibility of physical injury, fire or any other damage caused in the event of the
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shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
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e
The Products are not designed or manufactured to be used with any equipment, device or
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ot
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N
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R6006ANX

R6006ANX: V 6A 600V 1.2 R (Max.) I P

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R6006ANX

Nch 600V 6A Power MOSFET Datasheet

lFeatures lInner circuit

5) Parallel use is easy.

lApplication Tape width (mm) -

Switching Power Supply

lAbsolute maximum ratings (Ta = 25C)

Drain - Source voltage VDSS 600 V

Avalanche energy, single pulse EAS *3 2.4 mJ

lAbsolute maximum ratings

Parameter Symbol Conditions Unit

Drain - Source breakdown

Drain - Source avalanche

VDS = 600V, VGS = 0V

IDSS Tj = 25C - 0.1 100 mA

Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA

Gate input resistance RG f = 1MHz, open drain - 7.6 - W

lElectrical characteristics (Ta = 25C)

Transconductance gfs *6 VDS = 10V, ID = 3.0A 1.7 3.5 - S

Input capacitance Ciss VGS = 0V - 520 -

Output capacitance Coss VDS = 25V - 380 - pF

Turn - on delay time td(on) *6 VDD ⋍ 300V, VGS = 10V - 22 -

Fall time tf *6 RG = 10W - 35 70

lGate Charge characteristics (Ta = 25C)

Parameter Symbol Conditions Unit

Min. Typ. Max.

Total gate charge Qg *6 VDD ⋍ 300V - 15 -

Gate - Source charge Qgs *6 ID = 6A - 4 - nC

Gate - Drain charge Qgd *6 VGS = 10V - 6 -

Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 6A - 6.0 - V

*1 Limited only by maximum temperature allowed.

*2 PW  10ms, Duty cycle  1%

*5 Reference measurement circuits Fig.5-1.

lBody diode electrical characteristics (Source-Drain) (Ta = 25C)

Inverse diode continuous,

Forward voltage VSD *6 VGS = 0V, IS = 6A - - 1.5 V

Peak rate of fall of reverse

lTypical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

Rth2 1.15 K/W Cth2 0.0146 Ws/K

lElectrical characteristic curves

Drain Current : ID [A]

Fig.3 Normalized Transient Thermal

Resistance vs. Pulse Width

Pulse Width : PW [s]

lElectrical characteristic curves

Fig.4 Avalanche Current vs Inductive Load Fig.5 Avalanche Power Losses

Avalanche Power Losses : PAR [W]

Fig.6 Avalanche Energy Derating Curve

Junction Temperature : Tj [ºC]

lElectrical characteristic curves

Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)

Drain Current : ID [A]

Drain - Source Voltage : VDS [V]

Drain - Source Voltage : VDS [V]

Fig.9 Tj = 150°C Typical Output Fig.10 Tj = 150°C Typical Output

Ta = 150ºC 10V 6.5V Ta = 150ºC

lElectrical characteristic curves

Fig.11 Breakdown Voltage Fig.12 Typical Transfer Characteristics

Drain Current : ID [A]

Junction Temperature : Tj [°C]

Gate - Source Voltage : VGS [V]

Fig.13 Gate Threshold Voltage Fig.14 Transconductance vs. Drain Current