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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FAN73711
High-Current, High-Side Gate Drive IC
Features
 Floating Channel for Bootstrap Operation to +600 V
 4 A / 4 A Sourcing/Sinking Current Driving Capability
 Common-Mode dv/dt Noise Canceling Circuit
 3.3 V and 5 V Input Logic Compatible
 Output In-phase with Input Signal
 Under-Voltage Lockout for VBS
 Built-In Shunt Regulator on VDD and VBS
 8-Lead, Small Outline Package (SOP)
Applications
 High-Speed Gate Driver
 Sustain Switch Driver in PDP Application
 Energy Recovery Circuit Switch Driver in
PDP Application
 High-Power Buck Converter
 Motor Drive Inverter
Ordering Information
Part Number Operating Temperature Range
FAN73711MX
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
FAN73711 — High-Current, High-Side Gate Drive IC
March 2013
Description
The FAN73711 is a monolithic high-side gate-drive IC
that can drive high-speed MOSFETs and IGBTs operat-
ing up to +600 V. It has a buffered output stage with all
NMOS transistors designed for high pulse-current driving
capability and minimum cross-conduction.
Fairchild’s high-voltage process and common-mode
noise canceling techniques provide stable operation of
the high-side driver under high dv/dt noise circum-
stances. An advanced level-shift circuit offers high-side
gate driver operation up to VS=-9.8 V (typical) for
VBS=15 V. The UVLO circuit prevents malfunction when
VBS is lower than the specified threshold voltage.
The high-current and low-output voltage-drop feature
makes this device suitable as a sustain and energy-
recovery circuit switch driver in plasma display panel,
motor drive inverter, switching power supply, and high-
power DC-DC converter applications.
8-SOP
Package Packing Method
40°C ~ 125°C 8-SOP Tape and Reel
www.fairchildsemi.com
 FAN73711 — High-Current, High-Side Gate Drive IC
Typical Application Diagrams

15V
DBOOT3 RBOOT3
VS
15V
FAN73711
RBOOT1 DBOOT1 8 VB VDD 1
Q3 R3
D3 7 HO IN 2 IN3
FAN73711 CBOOT3
R4 6 VS NC 3
1 VDD VB 8
L1
5 NC GND 4
IN1 2 IN HO 7
CBOOT1 D1 D2
3 NC VS 6 D4
R1
4 GND NC 5
DBOOT2 To Panel
R2

Q1
FAN73711 FAN73711

1 VDD VB 8 8 VB VDD 1
R5 Q2 Q4 R7
IN2 2 IN HO 7 7 HO IN 2 IN4
CBOOT2
C1 3 NC VS 6 R6 6 VS NC 3 C3
R8
4 GND NC 5 5 NC GND 4

C2

Energy Recovery System Sustain Drive Part

FAN73711 Rev.01

Figure 1. Floated Bi-Directional Switch and Half-Bridge Driver: PDP Application

15V VIN

RBOOT DBOOT

FAN73711
1 VDD VB 8
R1
PWM 2 IN HO 7
CBOOT R2 L1

C1 3 NC VS 6

4 GND NC 5 D1 C2 VOUT

FAN73711 Rev.01

Figure 2. Step-Down (Buck) DC-DC Converter Application

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 2
 FAN73711 — High-Current, High-Side Gate Drive IC
Internal Block Diagram

VDD 1 VDD 8 VB

compensated gate driver

Shoot-through current
GND 4 UVLO

7 HO

GENERATOR
R

PULSE
NOISE R
IN 2 CANCELLER S Q
110K

6 VS
Pin 3 and 5 are no connection.

FAN73711 Rev.01

Figure 3. Functional Block Diagram

Pin Configuration

VDD 1 8 VB

IN 2 7 HO
FAN73711
NC 3 6 VS

GND 4 5 NC

FAN73711 Rev.01

Figure 4. Pin Configuration (Top View)

Pin Definitions
Pin # Name Description
1 VDD Supply Voltage
2 IN Logic Input for High-Side Gate Driver Output
3 NC No Connection
4 GND Ground
5 NC No Connection
6 VS High-Voltage Floating Supply Return
7 HO High-Side Driver Output
8 VB High-Side Floating Supply

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 3
 FAN73711 — High-Current, High-Side Gate Drive IC
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.

Symbol Characteristics Min. Max. Unit

(1)
VS High-Side Floating Offset Voltage VB-VSHUNT VB+0.3 V
VB High-Side Floating Supply Voltage -0.3 625.0 V
VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V
(1)
VDD Low-Side and Logic Supply Voltage -0.3 VSHUNT V
VIN Logic Input Voltage -0.3 VDD+0.3 V
dVS/dt Allowable Offset Voltage Slew Rate ± 50 V/ns
PD Power Dissipation(2,3,4) 0.625 W
JA Thermal Resistance 200 C/W
TJ Junction Temperature -55 +150 C
TSTG Storage Temperature -55 +150 C

Notes:
1. This IC contains a shunt regulator on VDD and VBS. This supply pin should not be driven by a low-impedance
voltage source greater than the VSHUNT specified in the Electrical Characteristics section.
2. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR-4 glass epoxy material).
3. Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and
JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages.
4. Do not exceed power dissipation (PD) under any circumstances.

Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.

Symbol Parameter Min. Max. Unit

VB High-Side Floating Supply Voltage VS+10 VS+20 V
VS High-Side Floating Supply Offset Voltage 6-VDD 600 V
VHO High-Side Output Voltage VS VB V
VIN Logic Input Voltage GND VDD V
VDD Supply Voltage 10 20 V
TA Operating Ambient Temperature -40 +125 C

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 4
 FAN73711 — High-Current, High-Side Gate Drive IC
Electrical Characteristics
VBIAS(VDD, VBS)=15.0 V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND.
The VO and IO parameters are relative to VS and are applicable to the respective output HO.
Symbol Characteristics Test Condition Min. Typ. Max. Unit
Power Supply Section
IQDD Quiescent VDD Supply Current VIN=0 V or 5 V 25 70 A
IPDD Operating VDD Supply Current fIN=20 kHz, No Load 35 100 A
Bootstrapped Supply Section
VBS Supply Under-Voltage Positive-Going
VBSUV+ VBS=Sweep 8.0 9.0 10.0 V
Threshold Voltage
VBS Supply Under-Voltage Negative-Going
VBSUV- VBS=Sweep 7.3 8.3 9.3 V
Threshold Voltage
V Supply Under-Voltage Lockout
VBSHYS BS VBS=Sweep 0.7 V
Hysteresis Voltage
ILK Offset Supply Leakage Current VB=VS=625 V 10 A
IQBS Quiescent VBS Supply Current VIN=0V or 5 V 60 120 A
CLOAD=1000 pF, fIN=20 kHz, A
IPBS Operating VBS Supply Current 470 800
rms Value
Shunt Regulator Section
VDD and VBS Shunt Regulator Clamping VDD=Sweep or VBS=Sweep
VSHUNT 21 23 25 V
Voltage ISHUNT=5 mA
Input Logic Section
VIH Logic “1” Input Voltage 2.5 V
VIL Logic “0” Input Voltage 0.8 V
IIN+ Logic Input High Bias Current VIN=5 V 40 65 A
IIN- Logic Input Low Bias Current VIN=0 V 2 A
RIN Input Pull-Down Resistance 90 110 K
Gate Driver Output Section
VOH High Level Output Voltage (VBIAS - VO) No Load 1.2 V
VOL Low Level Output Voltage No Load 30 mV
IO+ Output High, Short-Circuit Pulsed Current(5) VHO=0 V, VIN=5 V, PW 10 µs 3 4 A
IO- Output Low, Short-Circuit Pulsed Current(5) VHO=15 V,VIN=0 V, PW 10 µs 3 4 A
Allowable Negative VS Pin Voltage for IN
VS -9.8 -7.0 V
Signal Propagation to HO
Note:
5. These parameters guaranteed by design.

Dynamic Electrical Characteristics

VDD=VBS=15 V, GND=0 V, CLOAD=1000 pF, TA=25°C, unless otherwise specified.

Symbol Parameter Conditions Min. Typ. Max. Unit

ton Turn-On Propagation Delay VS=0 V 150 210 ns
toff Turn-Off Propagation Delay VS=0 V 150 210 ns
tr Turn-On Rise Time 25 50 ns
tf Turn-Off Fall Time 15 40 ns

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 5
 FAN73711 — High-Current, High-Side Gate Drive IC
Typical Characteristics

200 200

180 180

tOFF [ns]
tON [ns]

160 160

140 140

120 120

100 100

-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120

Temperature [°C] Temperature [°C]

Figure 5. Turn-On Propagation Delay Figure 6. Turn-Off Propagation Delay

vs. Temperature vs. Temperature

50 50

40 40
tR [ns]

tF [ns]

30 30

20 20

10 10

0 0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 7. Turn-On Rise Time Figure 8. Turn-Off Fall Time

vs. Temperature vs. Temperature

100 100

75 75
IQDD [A]
IQDD [A]

50 50

25 25

0 0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 9. Quiescent VDD Supply Current Figure 10. Quiescent VBS Supply Current
vs. Temperature vs. Temperature

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 6
 FAN73711 — High-Current, High-Side Gate Drive IC
Typical Characteristics (Continued)

100 800

80
600

IPBS [A]
60
IPDD [A]

400
40

200
20

0 0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 11. Operating VDD Supply Current Figure 12. Operating VBS Supply Current
vs. Temperature vs. Temperature

10.0 9.5

9.0
9.5
VBSUV- [V]
VBSUV+ [V]

8.5
9.0
8.0

8.5
7.5

8.0 7.0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 13. VBS UVLO+ vs. Temperature Figure 14. VBS UVLO- vs. Temperature

1.2 30

25
0.9
20
VOL [mV]
VOH [V]

0.6 15

10
0.3
5

0.0 0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 15. High-Level Output Voltage Figure 16. Low-Level Output Voltage
vs. Temperature vs. Temperature

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 7
 FAN73711 — High-Current, High-Side Gate Drive IC
Typical Characteristics (Continued)

2.5 2.5

2.0 2.0

VIL [V]
VIH [V]

1.5 1.5

1.0 1.0

0.5 0.5
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 17. Logic High Input Voltage Figure 18. Logic Low Input Voltage
vs. Temperature vs. Temperature

-7
60

-8
50
IIN+ [A]

40
VS [V]

-9

30
-10
20
-11
10

0 -12
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 19. Logic Input High Bias Current Figure 20. Allowable Negative VS Voltage
vs. Temperature vs. Temperature

25

24
VSHUNT [V]

23

22

21
-40 -20 0 20 40 60 80 100 120
Temperature [°C]

Figure 21. Shunt Regulator Clamping Voltage

vs. Temperature

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 8
 FAN73711 — High-Current, High-Side Gate Drive IC
Switching Time Definitions

Timing Diagram

15V

50% 50%
VDD VB
10nF 10µF 10µF 0.1µF
15V IN
VS
ton tr toff tf
GND
FAN73711
1000pF

90% 90%

IN HO

OUT 10% 10%

FAN73711 Rev.01

Figure 22. Switching Time Test Circuit and Waveform Definitions

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 9
 FAN73711 — High-Current, High-Side Gate Drive IC
Package Dimensions


 
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Figure 23. 8-Lead Small Outline Package (SOP)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 10
 FAN73711 — High-Current, High-Side Gate Drive IC

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN73711 • Rev. 1.0.1 11
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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