AP04N70BF-H

Pb Free Plating Product

Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Dynamic dv/dt Rating D BVDSS 700V

▼ Repetitive Avalanche Rated RDS(ON) 2.4Ω
▼ Fast Switching ID 4A
G
▼ Simple Drive Requirement
▼ RoHS Compliant S

Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220FM
G
type provide high blocking voltage to overcome voltage surge and sag D TO-220FM
S
in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.

The TO-220FM package is universally preferred for all commercial-

industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits.
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage www.DataSheet.co.kr
700 V
VGS Gate-Source Voltage ±30 V
ID@TC=25℃ Continuous Drain Current, V GS @ 10V 4 A
ID@TC=100℃ Continuous Drain Current, V GS @ 10V 2.5 A
1
IDM Pulsed Drain Current 15 A
PD@TC=25℃ Total Power Dissipation 33 W
Linear Derating Factor 0.26 W/℃
2
EAS Single Pulse Avalanche Energy 100 mJ
IAR Avalanche Current 4 A
EAR Repetitive Avalanche Energy 4 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.8 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W

Data & specifications subject to change without notice 200704051-1/6

Datasheet pdf - http://www.DataSheet4U.net/

AP04N70BF-H
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 700 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A - - 2.4 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=2A - 2.5 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=600V, VGS=0V - - 10 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=480V,VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±30V - - ±100 nA
3
Qg Total Gate Charge ID=4A - 16.7 - nC
Qgs Gate-Source Charge VDS=480V - 4.1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 4.9 - nC
3
td(on) Turn-on Delay Time VDD=300V - 11 - ns
tr Rise Time ID=4A - 8.3 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 23.8 - ns
tf Fall Time RD=75Ω - 8.2 - ns
Ciss Input Capacitance VGS=0V - 950 - pF
Coss Output Capacitance VDS=25V - 65 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF
www.DataSheet.co.kr

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 4 A
1
ISM Pulsed Source Current ( Body Diode ) - - 15 A
3
VSD Forward On Voltage Tj=25℃, IS=4A, VGS=0V - - 1.5 V

Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=25mH , RG=25Ω , IAS=4A.
3.Pulse width <300us , duty cycle <2%.

2/6

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 AP04N70BF-H

2.5 2

T C =25 o C T C =150 o C
V G =10V V G =10V
2
V G =6.0V 1.5 V G =6.0V
V G =5.0V V G =5.0V

ID , Drain Current (A)

ID , Drain Current (A)

1.5
V G =4.5V
V G =4.5V 1

0.5 V G =4.0V
0.5
V G =4.0V
V G =3.5V

0 0
0 1 2 3 4 5 6 7 0 2 4 6 8 10 12

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

www.DataSheet.co.kr

1.2 2.8

I D =2A
2.4
V G =10V
1.1
2
Normalized BVDSS (V)

Normalized R DS(ON)

1.6

1.2

0.8
0.9

0.4

0.8 0
-50 0 50 100 150 -50 0 50 100 150
o
T j , Junction Temperature ( C) T j , Junction Temperature ( o C )

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature

3/6

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AP04N70BF-H

4.5 40

3.5
30
ID , Drain Current (A)

2.5

PD (W)
20

1.5

10
1

0.5

0 0
25 50 75 100 125 150 0 50 100 150

T c , Case Temperature ( o C ) T c , Case Temperature ( o C )

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation

Case Temperature www.DataSheet.co.kr

100 1

DUTY=0.5
Normalized Thermal Response (Rthjc)

10

0.2
10us
0.1
100us
ID (A)

1 0.1

1ms 0.05

10ms 0.02
PDM

0.1
100ms t
0.01 T
SINGLE PULSE

T c =25 o C Duty factor = t/T

Peak Tj = P DM x Rthjc + TC
Single Pulse
0.01 0.01
1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS (V) t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

4/6

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 AP04N70BF-H

f=1.0MHz
16 10000

I D =4A
14
VGS , Gate to Source Voltage (V)

12
V DS =320V Ciss
V DS =400V
10
V DS =480V

C (pF)
8 100

Coss
6

2 Crss

0 1
0 5 10 15 20 25 1 6 11 16 21 26 31

Q G , Total Gate Charge (nC) V DS (V)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

www.DataSheet.co.kr

100 5

10
T j =150 o C 3
VGS(th) (V)
IS (A)

T j = 25 o C
2

0.1 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150

V SD (V) T j , Junction Temperature ( o C )

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature

5/6

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AP04N70BF-H

VDS
RD
90%

VDS TO THE
D OSCILLOSCOPE

0.5x RATED VDS

RG G

10%
+ S
10 V VGS
VGS
-

td(on) tr td(off) tf

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
www.DataSheet.co.kr

VG

VDS

TO THE QG
D OSCILLOSCOPE
10V
0.8 x RATED VDS
G QGS QGD

S VGS
+
1~ 3 mA
-
IG ID

Charge Q

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

6/6

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