EXPERIMENT - 1

AIM: Design and simulate MOS amplifier using Bulk Driven Technique.

SOFTWARE USED: Cadence Virtuoso

THEORY: Unlike conventional gate driven techniques, the gate source voltage must be set
to a proper bias voltage to form an inversion layer under the gate oxide. Also the input is
applied at the body rather than gate. The operation of BDMOS is much like a JFET where
the channel width is constant as long as input and bias voltages don’t change.BD-NMOS
operates under negative input voltage and has a wide operating range which stretches to
slightly positive input voltage .The operating range of BD MOS must be limited to avoid
latch up problem since the bulk source voltage must be smaller than the turn on voltage of the
bulk-source PN junction diode which causes a remarkable current through the bulk terminal
and the transistor is latch up.
The relatively smaller transconductance of BDMOS as compared to GDMOS is considered to
be the major disadvantage since high value of transconductance is desired in analog circuits.
Gain of bulk driven based MOS amplifier is:

CIRCUIT DIAGRAM
SIMULATIONS

1. DC RESPONSE

2. TRANSFER CHARACTERSTICS

3. FREQUENCY RESPONSE:
CALCULATIONS:

From wave form

Output Resistance= 1K ohm

Input resistance = 0.93K ohm

Gain= -1.107115868

3dB Frequency= 4.9 MHz

RESULT: The dc analysis and the frequency response for the bulk driven MOSFET have
been obtained.