AO4601

Complementary Enhancement Mode Field Effect Transistor

General Description Features

n-channel p-channel
The AO4601 uses advanced trench technology VDS (V) = 30V -30V
MOSFETs to provide excellent RDS(ON) and low ID = 4.7A (VGS=10V) -8A (VGS = -20V)
gate charge. The complementary MOSFETs may RDS(ON) RDS(ON)
be used to form a level shifted high side switch, < 55mΩ (VGS=10V) < 18mΩ (VGS = -20V)
and for a host of other applications. Standard < 70mΩ (VGS=4.5V) < 19mΩ (VGS = -10V)
Product AO4601 is Pb-free (meets ROHS & Sony
< 110mΩ (VGS = 2.5V)
259 specifications). AO4601L is a Green Product
ordering option. AO4601 and AO4601L are

D2 D1

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G2 G1
S2 S1
SOIC-8
n-channel p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±12 ±25 V
Continuous Drain TA=25°C 4.7 -8
Current A TA=70°C ID 4 -6.9 A
B
Pulsed Drain Current IDM 30 -50
TA=25°C 2 2
PD W
Power Dissipation TA=70°C 1.44 1.44
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s n-ch 52 62.5 °C/W
A
RθJA
Maximum Junction-to-Ambient Steady-State n-ch 78 110 °C/W
C
Maximum Junction-to-Lead Steady-State RθJL n-ch 48 60 °C/W
A
Maximum Junction-to-Ambient t ≤ 10s p-ch 50 62.5 °C/W
A
RθJA
Maximum Junction-to-Ambient Steady-State p-ch 73 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL p-ch 31 40 °C/W

Alpha & Omega Semiconductor, Ltd.

AO4601

n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 1 1.4 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 10 A
VGS=10V, ID=4A 45 55
mΩ
TJ=125°C 66 80
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=3A 55 70 mΩ
VGS=2.5V, ID=2A 83 110 mΩ
gFS Forward Transconductance VDS=5V, ID=4A 8 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.8 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 390 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 54.5 pF
Crss Reverse Transfer Capacitance 41 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 0.6 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=4A 1.38 nC
Qgd Gate Drain Charge 4.34 nC
tD(on) Turn-On DelayTime 3.3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=3.75Ω, 1 ns
tD(off) Turn-Off DelayTime RGEN=6Ω 21.7 ns
tf Turn-Off Fall Time 2.1 ns
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs 12 ns
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs 6.3 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4601

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10
10V
3V
12 8 VDS=5V
4.5V

9 6
ID (A)

ID(A)
2.5V
6 4
125°C

3 2
VGS=2V
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

150 1.8

125
Normalized On-Resistance

VGS=2.5V 1.6 VGS=4.5V

100
RDS(ON) (mΩ)

1.4 VGS=10V
75
VGS=4.5V
50 1.2 VGS=2.5V

25 VGS=10V 1

0
0 2 4 6 8 10 0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

200 1.0E+01

1.0E+00
150 ID=2A
1.0E-01
125°C
RDS(ON) (mΩ)

1.0E-02
IS (A)

100
125°C 1.0E-03
25°C
1.0E-04
50
25°C
1.0E-05

0 1.0E-06
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha and Omega Semiconductor, Ltd.

AO4601

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 600
VDS=15V
ID=4A 500
4
Ciss

Capacitance (pF)
400
VGS (Volts)

3
300
2
200

1 Coss Crss
100

0 0
0 1 2 3 4 5 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 TJ(Max)=150°C
20
TA=25°C TJ(Max)=150°C
TA=25°C
15
10.0 RDS(ON) 10µs
100µs
ID (Amps)

limited
Power (W)

1ms
10ms 10

1.0
1s 0.1
10s 5

DC
0.1
0
0.1 1 10 100
VDS (Volts) 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E)
Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z θJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4601

p-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 -2.5 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V 40 A
VGS=-10V, ID=-8A 16 19
mΩ
TJ=125°C 20.5 25
RDS(ON) Static Drain-Source On-Resistance
VGS=-20V, ID=-8A 15 18 mΩ
VGS=-4.5V, ID=-5A 33 mΩ
gFS Forward Transconductance VDS=-5V, ID=-8A 16 21 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.75 -1 V
IS Maximum Body-Diode Continuous Current -2.6 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2076 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 503 pF
Crss Reverse Transfer Capacitance 302 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 39 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-8A 8 nC
Qgd Gate Drain Charge 11.4 nC
tD(on) Turn-On DelayTime 12.7 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.8Ω, 7 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 25.2 ns
tf Turn-Off Fall Time 12 ns
trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/µs 32 ns
Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 26 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4601

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 25
-10V -8V -6V
VDS=-5V
-5.5V
40 20

-5V
30 15
-ID (A)

-ID(A)
20 -4.5V 10

125°C
10 VGS=-4V 5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

30 1.4
ID=-8A
25 VGS=-6V 1.3
Normalized On-Resistance

VGS=-10V
20
1.2
RDS(ON) (mΩ)

15
VGS=-10V 1.1 VGS=-4.5V
10
1
5
0.9
0
0 5 10 15 20 25 0.8
-ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

60 1.0E+01

50 1.0E+00
ID=-8A
1.0E-01
40 125°C
RDS(ON) (mΩ)

1.0E-02
-IS (A)

30 125°C
1.0E-03
20
25°C 1.0E-04
25°C
10 1.0E-05

0 1.0E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha and Omega Semiconductor, Ltd.

AO4601

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000
VDS=-15V
ID=-8A 2500
8 Ciss

Capacitance (pF)
2000
-VGS (Volts)

6
1500
4 Coss
1000
Crss
2
500

0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C TJ(Max)=150°C
TA=25°C 10µs TA=25°C
100µs
RDS(ON) 1ms 30
10.0 limited
Power (W)
-ID (Amps)

10ms
20
0.1s
1.0
1s
10
10s
DC
0
0.1
0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z θJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.