AO4406AL

30V N-Channel MOSFET

General Description Features

The AO4406AL uses advanced trench technology to

provide excellent RDS(ON) with low gate charge. VDS (V) = 30V
This device is suitable for high side switch in SMPS and ID = 13A (VGS = 10V)
general purpose applications. RDS(ON) < 11.5mΩ (VGS = 10V)
RDS(ON) < 15.5mΩ (VGS = 4.5V)

100% UIS Tested!

100% Rg Tested!

D
SOIC-8

D S D
S D
S D
G D
G G

S S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 13
ID
Current TC=70°C 10.4 A
Pulsed Drain Current C IDM 100
C
Avalanche Current IAR 22 A
C
Repetitive avalanche energy L=0.1mH EAR 24 mJ
B
TC=25°C 3.1
Power Dissipation PD W
TC=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W

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AO4406AL

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 1.9 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 100 A
VGS=10V, ID=12A 9.5 11.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 14 17
VGS=4.5V, ID=10A 12.5 15.5 mΩ
gFS Forward Transconductance VDS=5V, ID=12A 45 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 610 760 910 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 88 125 160 pF
Crss Reverse Transfer Capacitance 40 70 100 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 11 14 17 nC
Qg(4.5V) Total Gate Charge 5 6.6 8 nC
VGS=10V, VDS=15V, ID=12A
Qgs Gate Source Charge 1.9 2.4 2.9 nC
Qgd Gate Drain Charge 1.8 3 4.2 nC
tD(on) Turn-On DelayTime 4.4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.25Ω, 9 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs 5.6 7 8 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 6.4 8 9.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

Rev 1 : Jun-09
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4406AL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 30
10V
VDS=5V
6V 5V 25
80
7V

4.5V 20
60
ID (A)

ID(A)
15
4V
40
10
3.5V
20 5 125°C 25°C

0 VGS=3V 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

18 1.8
VGS=10V
Normalized On-Resistance

16
1.6 ID=12A
VGS=4.5V
14
RDS(ON) (mΩ )

1.4
17
12
5
VGS=4.5V
1.2 ID=10A 2
10
10
VGS=10V 1
8

6 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) 0
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
18
Figure 4: On-Resistance vs. Junction
Gate Voltage (Note E) Temperature (Note E)

30 1.0E+02
ID=12A
25 1.0E+01

1.0E+00
40
20
RDS(ON) (mΩ )

125°C 1.0E-01
IS (A)

15
1.0E-02
125°C 25°C
10
1.0E-03
25°C
5 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4406AL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=12A
1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
400 Coss

2
200

Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

60
1000.0
ID(A), Peak Avalanche Current

50 TA=25°C
10µs 100.0
RDS(ON) 10µs
40 limited
TA=100°C
ID (Amps)

10.0
100µs
30
1ms
TA=150°C TA=125°C 1.0
10ms
20
100ms
0.1 TJ(Max)=150°C
10 DC 10s
TA=25°C
0.0
0
0.1 1 10 100
0.000001 0.00001 0.0001 0.001
VDS (Volts)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability Figure 9: Maximum Forward Biased Safe
(Note C) Operating Area (Note F)

1000

TA=25°C

100
Power (W)

10

1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)

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AO4406AL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=75°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4406AL

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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