1972 Motorola Semiconductor Library First Edition Vol1 PDF

THE
SEMICONDUCTOR
DATA LIBRARY
_ _ _ _ _ _ _ _ _ _ FIRST EDITION
prepared by
Technical I nformation Center
The information in this book has been carefully checked and is believed to be reliable; however, no responsibility
is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
devices any license under the patent rights of any manufacturer identified in this library.
Nous n'acceptons aucune responsabilite' en ce qui concerne les erreurs qui auraient pu s'introduire dans cette
a a
edition, en depit des soins minutieux apportes sa pnlParation et sa revision; nous esperons toutefois que les
renseignements fournis sont fiables. De plus, il est bien entendu que ces renseignements ne permettent pas a'
I'acheteur de dispositifs semiconducteurs d'utiliser ies brevets des fabricants mentionnes dans ce catalogue.
Die in diesem Such enthaltenen Angaben wurden sorgfiiltig uberpruft und sind nach unserer Meinung vallig
zuverlassig. Wir konnen jedoch fUr die Genauigkeit dieser Angaben keine Verantwortung ubernehmen. Daruber
hinaus wird dem Kaufer von Halbleiterelementen mit Angaben, die in dieser Sibliothek genannt werden, keine
unter die Patentrechte eines Herstellers fallende Lizenz erteilt.
First Edition
@MOTOROLA INC., 1972
"All Rights Reserved"
THE
SEMICONDUCTOR
DATA LIBRARY
One of the major problems facing workers in the Dimensioned Device Outlines - Dimensioneddrawings
electronics field is the identification and selection of of package outlines with JEDEC and Motorola cross
semiconductor devices. Type numbers assigned to the reference. (Includes leadform drawings on specific
semiconductors are of little value since they indicate packages.!
neither device parameters nor appl ications. Because it Applrcation Note Catalog - Selection guide listing
is difficult even to identify the many thousands of application note by application category. Also a brief
device type numbers, let alone evaluate their merits for summary of the available application note contents and
a particular applicati9n, engineers often limit their how to order application notes.
designs to a few well-known device types - despite To meet the requirements of a practical up-to-date
the fact that newer or more suitable devices may be reference, the Reference Volume of the Semiconductor
available. To help alleviate this problem, the Motorola Li brary wi Ii be completely updated and published twice
Semiconductor Data Library has been developed. a year, with supplementary publications quarterly.
The Motorola Semiconductor Data Library identi-
fies and characterizes all semiconductor devices with
1 N- - -, 2N- - -, and 3N- - . numbers registered with the VOLUME I
Electronics I ndustries Association at the time the
library was printed, as well as a broad line of devices This volume contains complete data sheets for
with special in·house type numbers. (It provides Motorola-manufactured devices with E lA-registered
complete data sheet specifications for a wide range of type numbers up to 1 N4999 and 2N4999. Data sheets
discrete semiconductors, and short·form specifications are in numerical sequence according to device type
for integrated circuits'! And in addition, to simplify number except for those data sheets that cover several
the selection of the most useful semiconductor type devices with differing type numbers. A numerical
numbers, it contains carefully prepared selector guides index in front of the book permits the user to quickly
with recommended devices for specific applications. locate the page n umber of the data sheet for any device
Properly used, it can be a valuable aid for the design characterized in the book.
engineer, the component engineer, and the purchasing Since most of the device type numbers in the
agent in narrowing the broad categories of potentially "below 5000" category have already been utilized by
usable components to those best suited for a specific existing product, it is expected that this book will
project. require little updating in the next few years. Accord-
ingly, this volume will be reprinted only as required by
the demand, and modifications will be made only when
COMPOSITION OF THE LIBRARY
reprinting is required..
The Semiconductor Data library is divided into
three volumes, organized as follows: VOLUME II
REFERENCE VOLUME This volume contains data sheets for all Motorola-
manufactured, EIA registered devices with type num-
The reference volume is a self-contained com- bers 1 N5000 and 2N5000 and up, as well as those
pendium of semiconductor devices and integrated with 3N- - . type numbers. I n addition, all active data
circuits information. This volume enables the user to sheets for devices with special Motorola type numbers
locate and select devices for most any application or (not registered with E IA) are included.
specific circuit. It also contains package and hardware Because this book contains the detailed data for
information as well as applications information. Once all the most recently developed semiconductors, it will
a preliminary selection of a potentially suitable device be updated through .the publication of supplements.
has been made, consult Volumes I or II for detailed Two supplements will be published during the life of
specifications for that particular device. this edition.
EIA Registered Device Index - Complete numerical
index of all E IA registered device types, with major
electrical specifications.
How to Use The Semiconductor Data Library
Non-Registered Device Index - Complete numerical
index of all in-house non-registered Motorola device The library is designed to serve several specific
types, with major electrical specifications. functions;
Microcircuits Components - Unencapsulated tran- 1. To permit quick identification (together with
sistors, diodes, passive devices, and integrated circuits major specifications) of EtA registered semicon-
for use in hybrid circuits. (I ncludes processing, ductor devices with units with special Motorola
packaging, and inspection criteria'! type numbers.
Master Selection Guides - Grouping of preferred 2. To permit quick selection of the most suitable
devices by major device categories for quick pre- devices for a specific circuit application.
selection of devices best suited for specific applications. 3. To permit quick selection of the devices that
I ncludes semiconductor devices and I Cs. best meet a given set of electrical specifications.
Military Device Listing - A complete list of Motorola 4. To provide complete characterization of a broad
devices that comply with Military Specifications. line of components, encompassing most semi-
Hardware and Packaging Information - Device mount- conductor categories, for a detailed comparison
ing hardware, heat sinks and special device packaging. of device types.
"
The following examples illustrate several ways of Known: a) I ntended circuit application for a par-
using this library. ticular device
Problem: Device Identification b) Approximate electrical specifications of
Known: Device Type Number a desired device.
I nformation Needed: Device function, applications, I nformation Needed: a) What devices are available
major specifications. for a specific circuit function?
Procedure: Consult the Master I ndex of the Reference b) What device types will best
Volume and locate the type number of the device in match a required set of electrical characteristics?
question in the alpha-numeric listing of the master
index. The information given in this index lists not only Procedure: Consult the Master Selection Guide sec-
the type of device it is, but also provides the major tion of the Reference Volume. This section contains
electrical specifications for the device. I n addition, it product categories, i.e., power transistors, zener diodes,
indicates whether or not the device is manufactured by etc., and by specific market segments, including com-
Motorola and, if not, whether Motorola can supply an munications, consumer and military. An index to the
electrically suitable equivalent. Complete data for individual selector guides is given at the beginning of
Motorola man ufactured devices can then be obtained, the section for quick access to the pertinent guides.
if required, from the other two volumes of your Semi- Complete data for Motorola manufactured devices can
conductor Data Library. then be obtained, if required, from the other two
Problem: Device Preselection volumes of your Semiconductor Data Library.
CATALOGUE DE SEMICONDUCTEURS
Identifier et ensuite choisir les dispositifs semicon- INDEX DU CATALOGUE

ducteurs constituent I'un des grands problemes que
rencontrent ceux qui travaillent dans Ie domaine de
Le Catalogue de Semiconducteurs comprend trois
lelectronique. Les differents dispositifs sont des ignes
volumes:
par des chiffres ne donnant aucune indication sur leurs
parametres et sur leurs applications. La difficulte pour VOLUME DE REFERENCE
les techniciens et ingenieurs d'identifier plusieurs milliers Le volume de n!ference resume les renseignements
de dispositifs les am/ment a utiliser, lors de la concep- sur les dispositifs semiconducteurs et circuits integres.
tion de circuits, des dispositifs bien connus alors que
d'autres dispositifs mieux adaptes sont dispon ibles. Afin
Ce volume permet donc a I'utilisateur de determiner
et de choisir les dispositifs pour la majorite des appli-
de pall ier cet inconvenient, Motorola a donc institue cations; il contient egalement des renseignements sur
ce catalogue de semiconducteurs. les boitiers et sur les systemes de montage. Une fois
Le Catalogue de Semiconducteurs de Motorola iden- Ie choix du dispositif effectue, il suffit de consulter
tifie et caracterise les dispositifs semiconducteurs en- les Volumes I et II pour obtenir toutes les donnees
registnis au pres de I'Association des Industries Elec- concernant ce dispositif.
troniques (EIA) par les symboles 1N---, 2N---, et3N---
ainsi que les dispositifs propres a Motorola avec des Index des Dispositifs Homologue's par EIA
numeros speciaux. (Ce catalogue contient les specifica-
Cet index fournit egalement les donnees electriques
tions completes pour tous les semiconducteurs discrets, principales.
et des specifications abregees pour les circuits int~gres.)
De plus, afin de simplifier Ie choix des dispositifs les
,
Index des Dispositifs Non-Homologues
plus utiles, il contient egalement un "gu ide" mettant
en evidence les dispositifs destines a
des applications Cet index fournit une liste complete des dispositifs
bien specifiques. Son utilisation adequate peut donc Motorola non-homologue's, avec leurs donnees alec-
etre un outil de travail tres utile pour I'ingenieur de triques principales.
circuit, I'ingenieur de composants, et I'acheteur en leur
Composants Micro-circuits
permettant de limiter Ie nombre de composants pos-
sible convenent Ie mieux pour un projet bien deter- Transistors et diodes non-encapsule~, elements pas-
mine. sifs et circuits integres pour utilisation en circuits hy-
III
brides (ycompris processus, mise en boitier et criteres supplElmentaires, car il contient toutes les donnees de·
d'inspection.) taillees des dispositifs semiconducteurs les plus recents.
Deux supplements seront publies pendant la duree de
Guide vie de cette edition.
Les dispositifs les plus utilises y sont groupes par
Methode d'Utilisation du Catalogue de
categories principales. pour un choix rap ide des com·
Semiconducteurs
posants les mieux adaptes 'a certaines applications (y
compris dispositifs discrets et circuits integres.) Ce catalogue a pour but:
1. D'identifier rapidement, grace aux specifications
Liste des Dispositifs Mil itaires
principales, si Ie dispositif est homologue par E I A
Cette liste fournit tous les dispositifs Motorola homo· ou s'il s'agit d'un type special Motorola.
logues par les Specifications Militaires.
2. De selectionner rapidement Ie dispositif Ie mieux
Boitiers et Modes de Montage a
adapte un circuit.
Fournit les modes de montage, les radiateurs et les 3. De selectionner rapidement un dispositif en fonc·
boitiers speciaux. tion des specifications electriques.
4. De fournir les donnees completes de tout I'ensem·
Dimension des Boitiers ble des composants Motorola - donc la majorite
Dessin et dimension des boitiers homologues par des dispositifs semiconducteurs - afin de pouvoir
JEDEC et Motorola (y compris les dessins pour former com parer taus les types de dispositifs ..
les tiges.)
Exemples de methodes d'utilisation;
Catalogue de Notes d' Appl ications Question: Identifier Ie dispositif
Fournit une liste complete des notes d'applications Donnee: Type de dispositif
groupees par categories, egalement un resu me des notes Renseignements Requis: Fonction du dispositif, ap·
d'applications disponibles et la marc he asuivre pour plications et specifications
principal es.
les obtenir.
II est evident qu'afin de garder ce catalogue 'a jour, Methode: Consulter l'lndex du Volume de Reference
Ie Volume de Reference sera completement revise et et determiner Ie numero du dispositif en question parmi
publie deux fois par an, avec des additions supplemen. la liste numerique de I'index. Ce renseignement ainsi
taires publiees tous les trimestres. obtenu indique non seulement, Ie type de dispositif
mais egalement fournit les specifications electriques
VOLUME I principales de ce dispositif. De plus, Ie fabricant y
sera precise et Ie catalogue indiquera si Motorola peut
Ce volume est constitue par les specifications pour fournir les dispositifs equivalents. Les deux autres
les composants faits par Motorola avec les numeros volumes de ce catalogue vont maintenant fournir toutes
homologues par EIA jusqu'a 1N4999 et 2N4999. Ces les donnees sur les dispositifs faits par Motorola.
specifications sont ciassees par ordre numerique sauf
les specifications qui se rapportent a plusieurs types Question: Choix du Disposil if
de dispositifs. Un index numerique en premiere page Donnees:
permet'a I'utilisateur de determiner rapidemente Ie nu me· a) Application probable du circuit pour un dispositif
ro de la page pour chaque dispositif decrit dans ce connu.
catalogue.
b) Specifications'electriques approximatives du dispbsi·
II est probable que les dispositifs portant un numero tif en question.
en-dessous de 5000 necessiteront peu de mise jour a Renseignements Requis,:
puisque tous ces numeros sont deja utilises. En con·
a) Quels sont les dispositifs disponibles pour la fonc·
sequence, ce volume ne sera rllimprime que sur demande
tion precise de ce circuit?
et les modifications apparaitront uniquement lors de
cette nouvelle edition. b) Quel type de dispositif va rllpondre ades caracte·
ristiques electriques predlherminees?
VOLUME II Methode: Consulter Ie Guide dans Ie Volume de
Ce volume est constitue par toutes les specifications Reference qui est categorise par produits, c'est·a·dire
pour les dispositifs faits par Motorola, homologues par transistors de puissance, diodes zener, etc., et par mar-
EIA avec numeros 1N5000, 2N5000, etc. ainsi que ches, y compris communications, grand public, et mili·
ceux avec les numeros 3N···. De plus, les specifications taire. Ces differentes categories apparaissent en premiere
de dispositifs avec numeros speciaux de Motorola (non page pour faciliter la selection du Guide. Nous pouvons
homologues par EIA) y sont inciuses. maintenant obtenir toutes les donnees sur les disposi·
tifs faits par Motorola en utilisant les deux autres volu·
Ce catalogue sera mis a jour a I'aide d'editions mes du Catalogue de Semiconducteurs.
IV
DIE HALBLEITER DATENBIBLIOTHEK
Eines der Hauptprobleme fUr Fachleute in der Elek- hybriden Kreisen. (Prozess-, Einkapselung- und In-
tronik-Industrie besteht in der Bestimmunq und Selek- spektions-Kriterien sind inbegriffen.)
tion von Halbleitertypen. Die meisten Typenbezeich-
nungen geben wenig oder keine Auskunft uber Para- Hauptnachschlagewerk
meter oder Anwendungen von speziellen Halbleitern. Zusammenfassung in Gruppen der bevorzugten Haupt-
Viele tausend verschiedene Halbleitertypen sind heute elementkategorien fUr schnelle Vorselektion der Elemen-
erhiiltlich. Es ist fast unmoglich, auch nur einen te die am besten fur gegebene Anwendungen in Frage
geringen Prozentsatz aller Typen genau zu kennen. kommen. Dieses Dokument enhalt Halbleiterelemente
Somit bringen die meisten Ingenieure und Techniker und integrierte Kreise.
nur die bekanntesten und gebriiuchlichsten Halbleiter-
typen zur Anwendung, auch wenn neuere und bessere Mil itarelementen- Liste
Elemente zur Verfugung stehen.
Dies ist eine vollstandige Liste von Motorola Bausteinen
Um diesem Problem Abhilfe zu schaffen hat Motorola die Militarspezifikationen erfullen.
die meisten Halbleitertypen in eine Halbleitersammlung
zusammengefasst. Diese Halbleitersammlung umfasst Montagezubehor und Einkapselung Information
aile IN, 2N und 3N Typen, die durch die "Electronics
Bauelement-Montagezubehor, KU hlelemente u nd Spe-
Industries Association" registriert sind. Weiterhin sind
zial-E I ementeneinkapselung.
eine grosse Anzahl von Motorola In-Haus Typen in dieser
Sammlung zusammengefasst. Vollstandige Spezifika- Vermasste Elementen-Grundrisse
tionen einer grossen Anzahl von diskreten Halbleitern
und Kurzspezifikationen von integrierten Schaltkreisen Vermasste Zeichnungen von Gehiiusegrundrissen mit
sind vorhanden. JEDEC und Motorola GegenUberstellung. (Zeichnungen
der Anschlussformen von gegebenen Gehausen sind
Zusiitzl ich sind, zur Vereinfachung der Aufsuche der inbegriffen.)
meist gebrauchten Halbleitertypennummern, Nachschla-
getabellen mit Vorzugstypen fUr bestimmte Anwen- Awendu ngsbericht- Katalog
dungen in der Sammlung enthalten.
Nachschlaglisteder Anwendungsberichte welche in An-
Die Halbleitersammlung kann dem Entwicklungs und wendungskategorien zusammengefasst sind. Eine kurze
Komponent-Ingenieur sowie dem Einkiiufer von Halb- Zusammenfassung des I nhalts der verfugbaren Berichte
leitern gute Dienste leisten im Aufsuchen der best ist gegeben und ebenfalls wie sie bestellt werden konnen.
miiglichen Elemente fur eine bestimmte Anwendung.
Um den Anforderungen eines praktischen, auf den letz-
ten Stand gebrachten Nachschlagewerkes zu genugen
ZUSAMMENSETZUNG DER wird der Referenz-Band der Halbleiterbibliothek zwei-
HALBLEITERSAMMLUNG mal im Jahr vOllstiindig uberarbeitet und publiziert.
Zusiitzl iche Veriiffentl ichungen werden vierteljiihrl ich
Die Halbleitersammlung besteht aus drei Teilen, die herausgegeben.
folgendermassen zusammengefasst sind:
BAND I
REFERENZ-BAND
Dieser Band enthalt vOllstandige Datenbliltter der von
Der Referenz-Band besteht aus einer ubersichtlichen Motorola fabrizierten Elemente mit EIA registrierten
Zusammenfassung von Halbleitern und integrierten Nummern bis zu 1 N4999 und 2N4999. Die Daten-
Schaltungen. Mit Hilfe dieses Referenzbandes lassen blatter sind in numerischer Ordnung gemass der Bauele-
sich Halbleiter und integrierte Schaltungen fur spezielle mente-Typennummer eingereiht. Ausnahme sind solche
Anwendungszwecke leicht auffinden. Gehiiuse-, An- Datenbliitter welche spezielle Elemente mit wechsel nden
wendungs- und Montagezubehorinformation sind eben- Typennummern behandeln. Ein numerisches Verzeich-
so im Referenzband angegeben. Nach der Wahl eines nis am anfang des Bandes erlaubt dem Benutzer ein
Halbleiters oder einer integrierten Schaltung aus dem schnellesAuffinden der Datenblatter fur aile Elemente,
Referenzband kann Band I oder Band II fUr die speziel- die im Buch aufgefUhrt sind.
len Daten zur Hilfe gezogen werden.
Weil die meisten Elemente- Typennummern in der Kate-
gorie bis 5000 schon von bestehenden Produkten auf-
EIA Registriertes Halbleiter-Verzeichnis
gebraucht wurden, ist erwartet, dass dieser Band in
VOllstandiges numerisches Verzeichnis aller EIAregi- den niichsten Jahren wenig Ueberarbeitung verlangt.
strierter Halbleiter Typen, mit den hauptsachlichen elek- Dementsprechend wird dieses Buch nur neu gedruckt
trischen Spezifikationen. wenn die Nachfrage es verlangt und Modifikationen
werden nur bei einer Neuauflage vorgenommen.
Nicht Registriertes Halbleiter-Verzeichnis
Vollstandiges numerisches Verzeichnis aller nicht regi- BAND II
strierter I n-Haus Motorola Halbleiter Typen, mit den Dieser Band enthalt Datenblatter der von Motorola
hauptsachl ichen elektrischen Spezifikationen. hergestellten EIA registrierten Elemente mit der Typen-
nummer 1 N5000 und 2N5000 und aufwiirts und eben-
Mi kroschaltkreis- Komponenten falls solche mit den 3N- - Typennummern. Aile aktiven
Nicht eingekapselte Transistoren, Dioden, passive Ele- Datenblatter fUr Elemente mit speziellen Motorola
mente und integrierte Schaltkreise fur den Gebrauch in Typennummern (nicht EIA registriert) sind zusatzlich
v
hier einbezogen. Information, die in diesem Verzeichnis gegeben ist,
Weil dieser Band die detaillierten Dilten fur aile der bestehtnicht nur aus dem Elemententyp sondern auch
erst kUrzlich entwickelten Halbleiter enthilt, wird er die elektrischen Hauptspezifikationen sind gegeben.
durch Publ ikationen von Zusatzbuchern auf den letzten Zusatzlich ist angegeben ob das Element von Motorola
Stand gebracht. Zwei Zusatzbucher werden wiihrend hergestelltwird und, im Fall dass dies verneint wird, ob
der"Lebensdauer'~dieser Ausgabeveroffentl icht werden. Motorola ein elekti"isch vergleichbares Bauelement lie-
fern kann. Wenn benotigt, konnen die v611stiindigen
Wie wird "Die Halbleiter Datenbibliothek" gebraucht Daten der von Motorola hergestellten Halbleiter von
Die Bibl iothek ist zusammengestellt worden um mehrere den zwei anderen Banden der Halbleiter Bibliothek
spezielle Funktionen zu erfullen: erhalten werden.
1. Erlaubtschnelle Bestimmung (zusammen mit Haupt- Problem: Elementen-Vorbestimmung
spezifikationenl von·E IA registrierten Halbleitern Bekannt:
und Bausteinen mit speziellen Motorola Typennum- al Vorgesehene Schaltkreisanwendung fur ein bestimm-
mern. tes Element.
2. Erlaubt schnelle Selektion der best geeignetsten bl Ungefiihre elektrische Spezifikationen eines ge-
Elemente fUr eine bestirrimte Schaltungsanwendung. wUnschten Typs.
3. Erlaubt schnelle Selektion von Elementen welche Benotigte Information:
am besten gegebene elektrischeSpezifikationen eral Welche Elemente sind fyr eine bestirnmte Kreis-
fUlien. fu nk tion verfU gbar?
4. Liefert vollstandige Charakterisation einer breiten bl Welche Elementtypen erfLilien am besten die erfor-
Komponentenlinie, welche die meisten Halbleiter· derl ichen elek trischen Charakteristi ken?
Kategorien einschliesst. Erlaubt einen detaillierten
Vergleich der Elementtypen.
Die nachfolgenden Beispiele veranschaul ichen mehrere Vorgang: Das Hauptnachschlagwerk des Referenz-
Wege um diese Bibliothek zu gebrauchen. ban des wird aufgeschlagen. Dieses Kapitel enthl:ilt
Produktkategorien, z. B. Leistungstransistoren, Zener-
Problem: Elementen·Bestimmung
dioden etc. eingereiht in bestimmte Marktsegmente, ein-
Bekannt: Elemente-Typennummer
schliesslich Fernmeldewesen, Verbraucherindustrie und
Benotigte Information: Elementefunktion,
Militarbereich. Ein "Index" zu den einzelnen "Auswahl-
Anwendung, Haupt-
FUhrern" ist amanfang dieses Kapitels gegeben, was
spezifikationen
zum schnellen Auffinden der zutreffenden "Fuhrer"
Vorgang: 1m Hauptverzeichnis des Referenzbandes hilft. Volistandige Daten der von Motorola hergestell-
sind die Typennummern des zu untersuchenden Ele- ten Elemente kennen, wenn benotigt, von den zwei
mentes in der alphanumerischen Liste aufgefuhrt. Die anderen Banden entnommen werden.
VI
NUMERICAL INDEX
DEVICE PAGE DEVICE PAGE DEVICE PAGE

1N248B 1-3 1N758,A 1-9 1N989 1-26
1N249B 1-3 1N759,A 1-9 1N990
1N250B
1N429
1-3
1-5
1N761
1N762
1-10 1N991
1N992
+
1-26
1N702 1-9 1N763 1 N 1183 1-28
1N703 1N764 1 N1 184
1N704 1N765 1 N1185
1N705
1N706
1N707
1N708
1N766
1N767
1N768
1N769
1
1-10
1 N 1186
1 N 1187
1 N 1188
1 N 1189 1
1N709 1N816 1-11 1 N 1190 1-28
1N710 1 N821,A 1-11 1 N 1191 1-29
1N711 1N823,A 1-11 1 N 1192
1N712 1N825,A 1-15 1 N 1193
1N713 1N827,A 1-15 1 N 1194
1N714
1N715
1N829,A
1N935,A,B
1-15
1-18
1N1195,A
1N1196,A
1
~
1N716 1N936,A,B 1N1197,A
1N717 1N937,A,B 1N1198,A 1-29
1N718 1N938,A,B 1 N 1313 1-30
1N719 1N939,A,B 1-18 1 N 1314
1N720 1 N941,A,B 1-22 1 N 1315
1 N 1316
~
1N721 1N942,A,B
1N722 1N943,A,B 1 N1317
1N723 1N944,A,B 1 N 1318
1N724 1N945,A,B 1 N 1319
1N725 1N946,A,B 1-22 1N1320
1N726 1N957 1-26 1 N1321
1N727 1N958 1N1322
1N728 1N959 1N1323
1N729 1N960 1N1324
1N730 1N961 1N1325
1N731 1N962 1N1326
1N732 1N963 1N1327
1N733 1N964 1 N 1351
1N734 1N965 1 N 1352
1N735 1N966 1 N 1353
1N736 1N967 1N1354
1N737 1N968 1N1355
1N738 1N969 1N1356
1N739 1N970 1N1357
1N740 1N971 1N135.8
1N741 1N972 1N1359
1N742 1N973 1N1360
1N743 1N974 1N1361
1N744 1N975 1N1362
1N745 1N976 1N1363
1N746,A 1N977 1N1364
1N747,A 1N978 1N1365
1N748,A 1N979 1N1366
1N749,A 1N980 1N1367
1N750,A 1N981 1N1368
1N751,A 1N982 1N1369
1N752,A 1N983 1N1370
1N753,A 1N984 1 N 1371
1N754,A 1N985 1 N 1372
1N755,A 1N986 1N 1373
1N756,A 1N987 1N1374 It
1N757,A 1-9 1N988 1-26 1N1375 1-30
vii
NUMERICAL INDEX (continued)

1 N 1507 1-31 lN1815 1-33 1 N261 0 1-35
1 N 1508 lN1816 1 N2611
1 N 1509 lN1817 1N2612
lN1510 lN1818 I 1 N2613
lN1511
lN1512
lN1513
lN1514
lN1515
lN1819
1 N 1820
lN1821
1 N 1822
1 N 1823
lN2614
lN2615
lN2616
1 N2617
1 N2620,A.B
1
1-35
1-36
lN1516 1 N 1824 1 N2621,A.B
lN1517
lN1518
lN1519
lN1825
lN1826
lN1827
lN2622.A.B
1 N2623,A.B
lN2624.A.B
~
1-36
1 N 1520 lN1828 lN2804 1-40
1 N 1521 lN1829 lN2805
1 N 1522 lN1830 lN2806
1 N 1523 lN1831 1 N2807
1 N 1524 1 N 1832 1 N2808
1 N 1525 lN1833 1 N2809
1 N 1526 lN1834 1 N281 0
1 N 1527 1 N 1835 1 N2811
1 N 1528 1-31 lN1836 1 N2812
lN1530,A 1-5 1 N2008 1 N2813
1 N 1588 1-30 1 N2009 1 N2814
1 N 1589 1 N201 0 1 N2815
1 N 1590 1 N2011 1 N2816
1 N 1591 lN2012 1 N2817
1 N 1592 lN2032 lN2818
1 N 1593 lN2033 1 N2819
1 N 1594 1 N2034 1 N2820
1 N 1595 lN2035 1 N2821
1 N 1596 lN2036 1 N2822
1 N 1597 1 N2037 1 N2823
1 N 1598 lN2038 1 N2824
1 N 1599 1 N2039 1 N2825
1 N 1600 lN2040 1 N2826
1 N 1601 1 N2041 1 N2827
lN1602 lN2042 1 N2828
1 N 1603 1 N2043 lN2829
lN1604 lN2044 lN2830
lN1605 1 N2045 1 N2831
1 N 1606 1N2046 1 N2832
1 N 1607 1 N2047 1 N2833
1 N 1608 lN2048
f 1 N2834
1 N 1609 1-30 lN2049 1-33 1 N2835
1 N 1730 1-32 lN2163,A 1-34 1 N2836
1 N 1731 lN2164,A 1 N2837
1 N 1732
1 N 1733
1 N 1734
~
1-32
lN2165.A
lN2166,A
lN2167,A
1 N2838
1 N2839
lN2840
1 N 1735
lN1736,A
1-5 lN2168,A
1 N2169,A
1 1 N2841
1 N2842
1N1737,A
lN1738,A
lN1739,A
lN1740,A
lN1741,A
1 N 1742.A
lN1803
1
1-5
1-33
lN2170,A
lN2171.A
lN2382
lN2383
lN2384
lN2385
1 N2489
,
1-34
1-32
1-32
1-35
1 N2843
1 N2844
1 N2845
1 N2846
1 N2970
1 N2971
1 N2972
1-40
1-43
1 N 1804 lN2490 lN2973

lN1805 lN2491 1 N2974
1 N 1806 lN2492 1 N2975
lN1807 lN2493 1 N2976
1 N 1808 lN2495 1 N2977
lN1809 lN2496 1 N2978
lN1810 lN2497 1 N2979
lN1811 lN2498 1 N2980
lN1812
lN1813
lN2499
lN2500
, 1 N2981
1 N2982
lN1814 1-33 1 N2609 1-35 1 N2983 1-43
viii

1N2984 1-43 1N3156,A 1-45 1N3582,A,B 1-34
i
1N2985 1N3157,A 1N3583,A,B 1-34
1N2986 1 N3189 1N3649 1-55
1N2987 1 N3190 1N3650
1N2988 1N3191 1-45 1N3659
1N2989
1N2990
1N2991
1N2992
1N2993
1N3208
1N3209
1N3210
1N3211
1 N3212
1-48
+
1-48
1N3660
1N3661
1N3662
1N3663
1N3675
t
1-55
1-57
1N2994 1N3213 1-49 1N3676
1N2995 1N3214 1N3677
1N2996 1N3282 1N3678
1N2997
1N2998
1N2999
1N3000
1N3001
1N3283
1N3284
1N3285
1N3286
1N3305
t
1-49
1-40
1N3679
1N3680
1 N3681
1N3682
1N3683
1N3002 1N3306 1N3684
1N3003 1 N3307 1N3685
1N3004 1N3308 1N3686
1N3005 1N3309 1N3687
1N3006 1N3310 1N3688
1N3007 1 N3311 1N3689
1N3008 1 N3312 1N3690
1N3009 1N3313 1N3691
1N3010 1N3314 1N3692
1 N3011 1N3315 1N3693
1N3012 1N3316 1N3694
1N3013 1N3317 1N3695
1N3014 1N3318 1N3696
1N3015 1-43 1N3319 1N3697
1N3016 1-59 1N3320 1N3698
1 N3017 1N3321 1N3699
1 N3018 1N3322 1N3700
1N3019 1N3323 1N3701
1N3020 1N3324 1N3702
1N3021 1N3325 1N3703 1-57
1N3022 1N3326 1N3785 1-58
1N3023 1N3327 1N3786
1N3024 1N3328 1N3787
1N3025 1N3329 1 N3788
1N3026 1N3330 1N3789
1N3027 1N3331 1N3790
1N3028 1N3332 1N3791
1N3029 1N3333 1N3792
1N3030 1N3334 1N3793
1N3031 1N3335 1N3794
1N3032 1N3336 1 N3795
1N3033 1N3337 1N3796
1N3034 1N3338 1 N3797
1N3035 1N3339 1 N3798
1N3036 1N3340 1 N3799
lN3037 1N3341 1N3800
1N3038 1N3342 1N3801
1N3039 1N3343 1N3802
1N3040 1N3344 1N3803
1N3041 1N3345 1N3804
1N3042 1N3346 1N3805
1N3043 1N3347 lN3806
1N3044 1N3348 1 N3807
1N3045 1N3349 1N3808
1N3046 1N3350 1-40 1N3809
1N3047 1N3491 1-51 1 N3810
1N3048 1N3492 1 N3811
1N3049 1N3493 1N3812
1N3050
1N3051 1-59
1N3494
1N3495 +
1-51
1N3813
1 N3814
1N3154,A 1-45 1N3580,A,B 1-34 1N3815
1N3155,A 1-45 1N3581,A,B 1-34 1N3816 1-58
ix
DEVICE
lN3817
1 N3818
1 N3819
lN3820
,
PAGE
1-58
1-58
DEVICE
lN4078,A
lN4079,A
lN4080,A
lN4081,A
PAGE
1-5
DEVICE
lN4569
lN4570
lN4571
lN4572
PAGE
1-101
lN3821,A
lN3822,A
lN3823,A
lN3824,A
lN3825,A
1-59 lN4082,A
lN4083,A
lN4084,A
lN4085,A
lN4099
1
1-5
1-94
lN4573
lN4574
lN4575
lN4576
lN4577
lN3826,A 1 N4100 lN4578
lN3827,A 1 N4101 lN4579
lN3828,A lN4102 lN4580
lN3829,A lN4103 lN4581
lN3830,A 1-59 lN4104 lN4582
lN3879 1-65 lN4105 lN4583
~
lN3880 1 N4106 lN4584 1-101
lN3881 lN4107 lN4719 1-103
lN3882 lN4108 lN4720
lN3883 1-65 lN4109 lN4721
lN3889 1-71 lN4110 lN4722
~ 1
lN3890 1 N4111 lN4723
lN3891 lN4112 lN4724
lN3892 lN4113 lN4725 1-103
lN3893 1-71 lN4114 lN4728 1-105
lN3899 1-77 lN4115 lN4729
~
lN3900 1 N4116 lN4730
lN3901 lN4117 lN4731
lN3902 lN4118 lN4732
lN3903 1-77 lN4119 lN4733
lN3909 1-83 lN4120 lN4734
~
lN3910 lN4121 lN4735
1 N3911 lN4122 lN4736
lN3912 lN4123 lN4737
lN3913 1-83 lN4124 lN4738
lN3993 1-89 lN4125 lN4739
lN3994 lN4126 lN4740
lN3995 lN4127 1 N4741
lN3996 lN4128 lN4742
lN3997 lN4743
1
lN4129
lN3998 lN4130 lN4744
lN3999 1 N4131 lN4745
lN4000 1-89 lN4132 lN4746
lN4001 1-90 lN4133 lN4747
lN4002 lN4134 lN4748
lN4003
lN4004
lN4005
lN4006
lN4007
lN4057,A
!
1-90
1-5
lN4135
lN4370,A
lN4371,A
lN4372,A
lN4387
lN4388
1-94
1-9
1-9
1-9
1-98
1-99
lN4749
lN4750
lN4751
lN4752
lN4753
lN4754
lN4058,A lN4549 1-40 lN4755
lN4059,A lN4550 lN4756
lN4060,A lN4551 lN4757
lN4061,A lN4552 lN4758
lN4062,A lN4553 lN4759
lN4063,A lN4554 lN4760
lN4064,A lN4555 1 N4761
lN4065,A lN4556 lN4762
lN4066,A lN4557 lN4763
lN4067,A lN4558 lN4764 1-105
lN4068,A lN4559 lN4765 1-101
lN4069,A lN4560 lN4766
lN4070,A lN4561 lN4767
, I
lN4071,A lN4562 lN4768
lN4072,A lN4563 lN4769
lN4073,A lN4564 1-40 lN4770
lN4074,A lN4565 1-101 lN4771
lN4075,A lN4566 lN4772
lN4076,A lN4567 lN4773
lN4077,A 1-5 lN4568 1-101 lN4774 1-101
x

1N4775 1-101 2N324 2-17 2N718 2-77
1N4776 2N331 2-18 2N718A 2-79
1N4777 2N350A 2-20 2N720A 2-81
j
1N4778 2N351A 2-20 2N721 2-83
lN4779 2N375 2-22 2N722 2-85
1N4780 2N376A 2-25 2N726 2-87
1N4781 2N378 2-25 2N727 2-87
1N4782 2N379 2-25 2N731 2-89
1N4783 2N380 2-25 2N735 2-90
1N4784 1-101 2N381 2-27 2N736 2-90
1N4896,A 1-110 2N282 2-27 2N739 2-90
1N4897,A 2N383 2-27 2N740 2-90
1N4898,A 2N398,A 2-29 2N741,A 2-92
1 N4899,A 2N404 2-31 2N743 2-94
1N4900,A 2N404A 2-31 2N744 2-96
1N4901,A 2N441 2-33 2N753 2-69
1N4902,A 2N442 2-33 2N827 2-98
1N4903,A 2N443 2-33 2N828 2-100
1N4904,A 2N456A 2-36 2N828A 2-102
1N4905,A 2N457A 2-36 2N829 2-102
1N4906,A 2N458A 2-36 2N834 2-105

1N4907,A 2N459,A 2-25 2N835 2-105
1N4908,A 2N460 2-38 2N838 2-107
1N4909,A 2N461 2-38 2N840 2-109
1N4910,A 2N464 2-39 2N841 2-109
1N4911,A 2N465 2-39 2N869 2-111
1N4912,A 2N466 2-39 2N869A 2-113
1N4913,A 2N467 2-39 2N910 2-115
1N4914,A 2N499,A 2-41 2N911 2-115
1N4915,A 2N502,A,B 2-41 2N914 2-117
1N4916,A 2N508 2-17 2N915 2-119

1N4917,A 2N508A 2-43 2N916 2-121
1N4918,A 2N524 2-45 2N918 2-122
1N4919,A 2N525 2N929,A 2-124
1N4920,A
1N4921,A
1N4922,A
1 N4923,A
2N526
2N527
2N554
2N555
•
2-45
2-8
2-8
2N930,A
2N956
2N960
2N961
2-124
2-126
2-126
2-126
1N4924,A 2N559 2-48 2N962 2-126
lN4925,A 2N618 2-22 2N963 2-128
lN4926,A 2N650,A 2-52 2N964 2-126
1N4927,A 2N651,A 2-52 2N964A 2-131
1N4928,A 2N652,A 2-52 2N965 2-126
1N4929,A 2N653 2-54 2N966 2-126
lN4930,A 2N654 2-54 2N967 2-128
lN4931,A 2N655 2-54 2N968 2-137
1N4932,A 1-110 2N656 2-56 2N969
lN4933 1-111 2N657 2-56 2N970
2N665 2-57 2N971
~
1N4934
lN4935 2N669 2-6 2N972
1N4936
lN4937
1N4997
1N4998
1-111
1-103
1-103
2N681
2N682
2N683
2N684
2-58 2N973
2N974
2N975
2N978
1
2-137
2-140
lN4999 1-103 2N685 2N985 2-142
2N109
2N173
2N174
2N176
2N178
2-11
2-3
2-3
2-6
2-8
2N686
2N687
2N688
2N689
2N696
1
2-58
2-61
2N995
2N996
2N998
2N1008,A,B
2N 1 011
2-143
2-144
2-146
2-148
2-149
2N242
2N277
2N278
2-10
2-11
2-11
2N697
2N699
2N700,A
2-61
2-62
2-64
2N 1 021
2N1022
2N1038
,
2-150
2-150
2-153
,
2N297A 2-14 2N702 2-66 2N1039
2N307,A 2-10 2N703 2-66 2N1040
2N319 2-16 2N705 2-67 2N 1041 2-153
2N320 2-16 2N706,A,B 2-69 2Nl042 2-155
2N321 2-16 2N707,A 2-71 2N1043
2N322 2-17 2N708 2-73 2N1044
2N323 2-17 2N711,A,B 2-74 2N1045 2-155
xi

2Nl073,A,B 1-157 2N1555,A 2-198 2N2096 2-180
2Nl099 2N1556,A
t
~
2-159 2N2097
2Nll00 2-3 2N1557,A 2N2099
2Nl120 2-160 2N1558,A 2N2100 2-180
2Nl131,A 2-161 2N1559,A 2N2137,A 2-243
2Nl132,A 2-85 2N1560,A 2-198 2N2138,A
2Nl141 2-164 2N1561 2-202 2N2139,A
2Nl142 2-164 2N1562 2-202 2N2140,A
2N 1143 2-164 2N1595 2"205 2N2141,A
2Nl162,A 2-169 2N1596
~
2N2142,A
2Nl163,A 2N1597 2N2143,A
~
2Nl164,A 2N1598 2N2144,A
2Nl165,A 2N1599 2-205 2N2145,A
2Nl166,A 2N1613 2-77 2N2146,A 2-243
2Nl167,A 2-169 2Nl.651 2-207 2N2152 2-247
2N 1175 2-173 2N1652 2-207
~
2N2153
2N 1185 2N1653 2-207 2N2154
2Nl186
2N 1187
2N 1188
~
2-173
2N1692
2N1693
2N1705
2-202
2"202
2-209
2N2156
2N2157
2N2158 2-247
2N 1189
2Nl190
2N 1191
2Nl192 ,
2-176
2-176
2-178
2N1706
2N1707
2N 1708
2N1711
2-209
2-209
2-211
2-77
2N2171
2N2192,A,B
2N2193,A,B
2N2194,A,B
2-27
2-251
+
2Nl193
2N 1194
2N 1195
2N1204,A
2N1358,A
2N1359
2N1360
2-178
2-164
2-180
2-3
2-22
2Nl724
2N1725
2N1742
2N 1751
2N1842
2N1842A
2N1843
2-213
2-213
2-41
2-216
2-218
2-221
2-218
2N2195,A,B
2N2212
2N2218,A
2N2219,A
2N2221,A
2N2222,A
,
2-251
2-253
2-255
2-255
2N2223,A 2-236
2N1362
2N1363
2N1364
2N1365
2N1408
2N1412,A
2N1413
t
2-22
2-185
2-186
2-189
2N1843A
2N1844
2N1844A
2N1845
2N1845A
2N1846
2N1846A
2-221
2-218
2-221
2-218
2-221
2-218
2-221
2N2224
2N2242
2N2256
2N2257
2N2258
2N2259
2N2273
,
2-262
2-264
2-266
2-266
2-269
2N1414 2-189 2N1847 2-218 2N2285 2-207
2N1415 2-189 2N1847A 2-221 2N2286 2-207
2N1420 2-77 2N1848 2-218 2N2287 2-207
2N1494,A 2-180 2N1848A 2-221 2N2288 2-273
2N1495 2-180 2N1849 2-218 2N2289 2-273
2N1496 2-180 2N1849A 2-221 2N2290 2-273
2N1529,A 2-191 2N1850 2-218 2N2291 2-275
2N1530,A 2N1850A 2-221 2N2292 2-275
2N 1531,A 2N1893 2-224 2N2293 2-275
2N1532,A 2N1924 2-226 2N2303 2-85
2N1533 2N1925 2-226 2N2322 2-277
,
2N1534,A 2N1926 2-226 2N2323
2N1535,A
2N1536,A
2N1537,A r
2N1959
2N1970
2N1980
2-228
2-230
2N2324
2N2325
2N2326
~
2-277
2N1538 2-191 2N1981 2N2330 2-279
2N 1539,A 2-195 2N1982 2-230 2N2331 2-279
2N1540,A 2N1983 2-231 2N2357 2-282
2N1541,A 2N1984 2-231 2N2358 2-282
2N1542,A 2N1990 2-233 2N2359 2-282
2N1543 2N1991 2-161 2N2368 2-284
2N1544,A 2N2042 2-234 2N2369 2-286
2N1545,A 2N2043 2-234 2N2369A 2-290
2N1546,A 2N2060,A 2-236 2N2381 2-292
2N1547,A 2N2075,A 2-239 2N2382 2-292
2N1548 2-195 2N2076,A 2N2405 2-224
2N1549,A 2-198 2N2077,A 2N2410 2-296
~
2N1550,A 2N2078,A 2N2415 2-298
2N1551,A
2N1552,A
2N1553,A
2N1554,A 2-198
2N2079,A
2N2080,A
2N2081,A
2N2082,A
1
2-239
2N2416
2N2453,A
2N2476
2N2477
2-298
2-300
2-302
2-302
xii

2N2480,A 2-236 2N2895 2-360 2N3116 2-391
,
2N2481 2-304 2N3896 2-360 2N3120 2-427
2N2490 2-308 2N3897 2-360 2N3121 2-427
2N2491 2N2903.A 2-362 2N3127 2-429
2N2492
2N2493
+
2-308
2N2904.A
2N2905,A
2-364 2N3133
2N3134
2-433
2N2501
2N2526
2-309
2-312
2N2906,A
2N2907.A
+
2-364
2N3135
2N3136 2-433
2N2527 2-312 2N2912 2-370 2N3137 2-435
2N2528 2-312 2N2913 2-372 2N3209 2-437
2N2537 2-315 2N2914 2N3210 2-439
2N2538 2N2915 2N3211 4-441
2N2539 2N2916 2N3227 2-286
1
2N2540 2N2917 2N3232 2-443
2N2552
2N2553
2N2554
2N2555
2N2556
1
2-153
2N2918
2N2919
2N2920
2N2927
2-372
2-328
2-374
2N3235
2N3244
2N3245
2N3248
2-443
2-445
2-445
2-449
l
2N2929 2N3249 2-449
2N2557 2N2944 2-376 2N3250,A 2-453
2N2558 2N2945 2-376 2N3251,A 2-453
2N2559 2-153 2N2946 2-376 2N3252 2-459
2N2560 2-155 2N2947 2-377 2N3253 2-459
2N2561 2N2948 2-377 2N3279 2-464
2N2562 2N2949 2-380 2N3280 2-464
2N2563 2N2950 2-380 2N3281 2-464
1
2N2564 2N2951 2-382 2N3282 2-464
2N2565 2N2952 2-382 2N3283 2-466
~
2N2566 2N2955 2-385 2N3284
2N2567 2-155 2N2956 2-385 2N3285
2N2573 2-317 2N2957 2-385 2N3286 2-466
2N2574 2N2958 2-391 2N3287 2-469
2N2575 2N2959 2-391 2N3288
t
2N2576
2N2577
2N2578
2N2579
l
2-317
2N2972
2N2973
2N2974
2N2975
2-372 2N3289
2N3290
2N3291
2N3292
2-469
2-471
2N2635 2-320 2N2976 2N3293

+
2N2639
2N2640
2-322 2N2977
2N2978
1 2N3294 2-471
!
2N3295 2-473
,
2N2641 2N2979 2-372 2N3296 2-476
2N2642 2N3009 2-393 2N3297 2-479
2N2643 2N3010 2-395 2N3298 2-482
2N2644 2-322 2N3011 2-397 2N3299 2-484
2N2646 2-324 2N3012 2-399 2N3300
2N2647 2-324 2N3013 2-393 2N3301
2N2652,A 2-326 2N3014 2-393 2N3302 2-484
2N2696 2-328 2N3015 2-401 2N3303 2-486
2N2710 2-330 2N3019 2-403 2N3304 2-488
2N2720 2-332 2N3020 .2-403 2N3307 2-490
2N2721 2-332 2N3021 2-405 2N3308 2-490
2N2722 2-334 2N3022 2N3311 2-492
~ ~
2N2723 2-336 2N3023 2N3312
2N2724 2-336 2N3024 2N3313
2N2725 2-336 2N3025 2N3314
2N2728 2-338 2N3026 2-405 2N3315
2N2785 2-340 2N3043 2-410 2N3316 2-492
2N2800 2-342 2N3044 2N3323 2-495
2N2801
2N2832
2N2833
2N2834
2N2837
2N2838
2-342
2-344
2-344
2-344
2-242
2-242
2N3045
2N3046
2N3047
2N3048
2N3053
2N3054A
!
2-410
2-412
2-413
2N3324
2N3325
2N3330
2N3375
2N3425
2N3427
2-495
2-495
2-498
2-500
2-504
2-506
2N2845 2-350 2N3055 2-417 2N3428 2-506
2N2846 2-350 2N3072 2-421 2N3439 2-509
2N2847 2-350 2N3074 2-421 2N3440 2-509
2N2848 2-350 2N3081 2-423 2N3444 2-459
2N2857 2-352 2N3114 2-425 2N3445 2-513
2N2894 2-358 2N3115 2-391 2N3446 2-513
xiii

2N3447 2-513 2N3771 2-606 2N3961 2-500
2N3448 2-513 2N3772 2-606 2N3970 2-691
2N3467 2-517 2N3783 2-609 2N3971 2-691
2N3468 2-517 2N3784 2-609 2N3972 2-691
2N3485,A 2-364 2N3785 2-609 2N3980 2-693
2N3486,A 2-364 2N3789 2-614 2N3993 2-695
2N3487 2-520 2N3790 2-614 2N3994 2-695
2N3488 2N3791 2-614
!
2N3994A 2-695
2N3489 2N3792 2-614 2N4012 2-697
2N3490 2N3796 2-619 2N4015 2-699
2N3491 2N3797 2-619 2N4016 2-699
2N3492 2-520 2N3798,A 2-623 2N4048 2-701
~
2N3494 2-523 2N3799,A 2-623 2N4049
,
2N3495 2-523 2N3800 2-627 2N4050
2N3496 2-523 2N3801 2N4051
2N3497 2-523 2N3802 2N4052
2N3498 2-524 2N3803 2N4053 2-701
2N3499 2N3804 2N4066 2-705
2N3500 2N3804A 2N4067 2-705
2N3501 2-524 2N3805 2N4072 2-707
2N3506 2-531 2N3805A 2N4073 2-707
2N3507 2-531 2N3806 2N4091 2-709
2N3508 2-533 2N3807 2N4092 2-709
2N3509 2-533 2N3808 2N4093 2-709
2N3510 2-536 2N3809 2N4123 2-711
2N3511 2-536 2N3810 2N4124 2-711
2N3544 2-539 2N3810A 2N4125 2-715
2N3546 2-541 2N3811 2N4126 2-715
2N3553 2-500 211!3811A 2N4130 2-719
2N3611 2-545 2N3812 2N4151 2-721
,
2N3612 2N3813 2N4152
2N3613
2N3614 +
2-545
2N3814
2N3815
2N4153
2N4154
2N3615 2-548 2N3816 2N4155
2N3616 2N3816A 2N4156
2N3617 2N3817 2N4157
2N3618 2-548 2N3817A 2-627 2N4158
2N3632 2-500 2N3818 2-631 2N4159
2N3634 2-552 2N3821 2-634 2N4160
2N3635 2N3822 2-634 2N4161
2N3636
2N3637 +
2-552
2N3823
2N3824
2-636
2-634
2N4162
2N4163
,
2N3647 2-536 2N3838 2-638 2N4164
2N3648 2-536 2N3839 2-352 2N4165
2N3712 2-558 2N3866,A 2-640 2N4166
2N3713 2-560 2N3870 2-645 2N4167
2N3714 2N3871 2N4168
2N3715
+ 2N3872 2N4169
,
2N3716 2-560 2N3873 2-645 2N4170
2N3719 2-564 2N3883 2-647 2N4171
2N3720 2-564 2N3896 2-645 2N4172
,
2N3726 2-568 2N3897 2N4173
2N3727 2-568 2N3898 2N4174
2N3733 2-570 2N3899 2-645 2N4175
2N3734 2-572 2N3902 2-651 2N4176
2N3735 2N3903 2-655 2N4177
2N3736 2N3904 2-655 2N4178
2N3737 2-572 2N3905 2-660 2N4179
,
2N3738 2-578 2N3906 2-660 2N4180
2N3739 2-578 2N3909,A 2-665 2N4181
2N3740,A 2-582 2N3924 2-667 2N4182
2N3741,A 2-582 2N3925 2N4183
2N3742 2-587 2N3926 2N4184
2N3743 2-591 2N3927 2-667 2N4185
2N3762 2-595 2N3946 2-673 2N4186
2N3763 2N3947 2-673 2N4187
2N3764
2N3765
+
2-595
2N3948
2N3950
2-679
2-683
2N4188
2N4189
2N3766 2-601 2N3959 2-687 2N4190
2N3767 2-601 2N3960 2-687 2N4191 2-721
xiv
PEVICE PAGE DEVICE PAGE DEVICE PAGE

2N4192 2-721 2N4363 2-780 2N4890 2-838
2N4193 2N4364 2N4898 2-840
2N4H!4 2N4365 2N4899 2-840
2N4195 2N4366 2N4900 2-840
2N4196
2N4197
2N4198
1
2-721
2N4367
2N4368
2N4371
2N4901
2N4902
2N4903
2.844
2-844
2.844
2N4199 2-727 2N4372 2N4904 2-848
2N4200 2N4373 2N4905 2.848
2N4201 2N4374 2N4906 2-848
2N4202
2N4203
2N4204
1
2-727
2N4375
2N4376
2N4377
2N4910
2N4911
2N4912
2-852
2.852
2.852
2N4212 2-733 2N4378 2-780 2N4913 2-856
2N4213 2N4391 2-784 2N4914 2.856
2N4214 2N4392 2-784 2N4915 2-856
2N4215
2N4216 +
2-733
2N4393
2N4398
2-784
2-786
2N4918
2N4919
2.860
2.860
2N4220,A 2-735 2N4399 2-786 2N4920 2.860
2N4221,A 2-735 2N4400 2-791 2N4921 2-864
2N4222,A 2-735 2N4401 2-791 2N4922 2-864
2N4223 2-739 2N4402 2-795 2N9423 2-864
2N4224 2-739 2N4403 2-795 2N4924 2-868
,
2N4231 2-743 2N4404 2-802 2N4925 2-868
2N4232 2-743 2N4405 2.802 2N4926 2-869
2N4233 2-743 2N4406 2-808 2N4927 2-869
2N4234 2-746 2N4407 2.808 2N4928 2-871
2N4235 2-746 2N4409 2-812 2N4929
2N4236 2-746 2N4410 2-812 2N4930
2N4237 2-751 2N4416 2-814 2N4931 2-871
2N4238
2N4239
2N4260
2N4261
2N4264
2N4265
2N4276
2-751
2-751
2-755
2-755
2-759
2-759
2-764
2N4427
2N4428
2N4441
2N4442
2N4443
2N4444
2N4851
,
2.816
2-818
2.820
2-820
2.824
2N4937
2N4938
2N4939
2N4940
2N4941
2N4942
2N4948
2.873
~
2-873
2-875
2N4277 2N4852 2-824 2N4949 2-875
2N4278 2N4853 2.824 2N4957 2-877
2N4279 2N4854 2-828 2N4958 2-877
2N4280
2N4281
1 2N4855
2N4856,A
2.828
2-830
2N4959
2N4974
2-877
2-885
~
2N4282 2N4857,A 2N4975 2.885
2N4283 2-764 2N4858,A 2N4993 2-887
2N4342 2-768 2N4859,A
2N4351 2-770 2N4860,A
2N4352 2-774 2N4861,A 2.830
2N4360 2-778 2N4870 2.832
2N4361 2-780 2N4871 2-832
2N4362 2-780 2N4877 2-836
xv
xvi
1N••• JEDEC REGISTERED
DEVICE SPECIFICATIONS
1-1
1-2
lN248B Ie thru lN250B, C
lN1191 thru lN1198
lN1195A thru lNl198A
1N3213,.1 N3214
Medium current silicon rectifiers. Unique double-

case construction consists of hermetically sealed inner
metallic case surrounded by molded external case;
provides highest degree of ruggedness and reliability .
Type numbers shown have cathode connected to case.
CASE 42 but reverse-polarity units can be obtained by adding
(DO-5)
suffix "R" to standard type number, e. g. IN248BR.
MAXIMUM RATINGS
Rating Symbol Value Unit

Peak Repetitive Reverse Voltage VRM (rep) Volts
and
DC BlOCking Voltage VR
lN248B, lN119l 50
lN248C 55
lN249B, lN1192 100
lN249C 110
lN1193 150
lN250B, lN1194 200
lN250C 220
lN1195, lN1195A 300
lN1196, lN1196A 400
lN1197, lN1197A, lN32l3 500
lN1198, lN1198A, lN32l4 600
RMS Reverse Voltage Vr Volts
lN248B, lN119l 35
lN248C 38.5
lN249B, lN1192 70
lN249C 77
lN1193 105
lN250B, lN1194 140
lN250C 154
lN1195, lN1195A 210
lN1196, lN1196A 280
lN1197, lN1197A, lN32l3 350
lN1198, lN1l98A, lN32l4 420
Average l/2-Wave Rectified Forward Current 10 Amp

(Resistive Load, 60 Hz , TC = 150°C) 20
Peak Repetitive Forward Current IFM (rep) Amp

(TC = 150°C) 90
Peak Surge Current IFM (surge) Amp
(TC = 150°C, superimposed on Rated 350
Current at Rated Voltage, 1/2-Cycle,
1/120 sec)
1-3
1N248B,C thru 1N250B,C (continued)
THERMAL CHARACTERISTICS
Maximum Operating and Storage Temperature: -65 to + 190°C

Maximum Thermal Impedance, Junction to Case: (JJC = 1.50 C/W DC D
ELECTRICAL CHARACTERISTICS
Cbara,cteristics Symbol, Max Unit

Full Cycle Average Forwarc;l Voltage Drop VF(AV) Volts
(10 (max)' rated Vr ,60 cps; TC = 150°C) 0.6
Instantaneous Forward Voltage Drop VF Volts
(I: F = 100 Amps, T J = 25°C) 1.5
Full Cycle Average Reverse Current IR(AV) mA
(10 ~max)' rated Yr' 60 cps, TC = 150°C)
IN 48B thru lN250B, lN119l thru lN1198 5.0
lN248C 3.8
lN249C 3.6
lN250C 3.4
lN1195A 3.2
lN1196A 2.5
lN1197A 2.2
lN1198A 1.5
lN32l3 and lN32l4 10.0
DC Reverse Current IR mA
(Rated VR , TC = 25°C) 1.0
MAXIMUM AVERAGE FORWARD CURRENT RATING

versus MAXIMUM CASE TEMPERATURE TYPICAL FORWARD CHARACTERISTICS
1000
800
600
~
400
J.oo"':
a:-
~
:$ 200 ~
~
t-
..,
Z
co:
co:
100
::>
u
80
Q
co:
60 L
~
co:
40
1 L
•
....
0
1/ II
U)
::> 20
..,
0
= ISOOC / = 25°C
z TJ JT J .
~ 10
z
~ 8
U)
!: 6
~ 4
2
I
o
1
0.4 0.8 1.2 1.6 2.0
Te. MAXIMUM CASE TEMPERATURE (OC) V,. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1-4
lN429
Temperature compensated zener reference diodes de-
1 N1530 series signed for reference sources utilizing an oxide-passivated
junction for long-term voltage stability, high uniformity
and reliable operation.
N1735 series
1
lN4057 series
CASE 41
CASE 57
MAXIMUM RATINGS ITA = 25 0 C unless otherwise noted)
Operating Junction Temperature Range TJ -55 to +175 °c

Storage Temperature Range Tstg -65 to +175 °c
Power Dissipation * Po See Tables 1 & 2* W
*The devices are designed for operation at the specified IZT. Operation above or below
this current is not recommended, since the temperature coefficient is no longer valid.
See Note 2 and Figure 4.
MECHANICAL CHARACTERISTICS
Discrete glass package devices encapsulated in a
Case: transfer molded plastic package
Polarity: Indicated by diode symbol except 1N429, 1N1530, 1N1530A where cathode
indicated by polarity dot of contrasting color
Weight: Varies according to device
0.5 grams (min)
12 grams (max)
Finish: All external surfaces corrosion resistant and leads readily solderable.
1-5
1N429/1 N1530/1 N1735/ 1N4057 (continued)
TABLE 1 - ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Zener
Voltage±5% Temperature ",vz@ IZT ",Vz
ZZT PO·
Coefficient (+25 to +1 DOOC) (-55 to + 250 C)
Vz @ IZT Ohms %/OC TA = 250 C
Volts Volts
TYPE CASE Volts mA (Note 3) (Note 2) (Note 2) (Note 2) W
lN4057 41-8 12.4 10 25 0.005 0.047 0.050 1.5

lN4057A 12.4 25 0.002 0.019 0.020
1 N4058 14.6 30 0.005 0.055 0.058
lN4058A 14.6 0.002 0.022 0.023
1 N4059 16.8 0.005 0.063 0.067
1 N4059A 16.8 0.002 0.025 0.027
1 N4060 18.5 0.005 0.069 0.074
lN4060A 18.5 0.002 0.028 0.030
lN4061 21 35 0.005 0.079 0.084
1 N4061A 21 35 0.002 0.032 0.034
1 N4062 23 40 0.005 0.086 0.092
lN4062A 23 40 0.002 0.035 0.037
1 N4063 27 45 0.005 0.101 0.108
lN4063A 27 45 0.002 0.041 0.043
1 N4064 30 50 0.005 0.113 0.120
lN4064A 30 50 0.002 0.045 0.048
1 N4065 33 55 0.005 0.124 0.132
lN4065A 33 55 0.002 0.050 0.053
1 N4066 37 7.5 80 0.005 0.139 0.148
lN4066A 37 80 0.002 0.056 0.059
1 N4067 43 90 0.005 0.161 0.172
1 N4067A 43 90 0.002 0.065 0.069
1 N4068 47 100 0.005 0.176 0.188
lN4068A 47 100 0.002 0.071 0.075
1 N4069 41-9 51 110 0.005 0.191 0.204 2.0
lN4069A 51 110 0.002 0.077 0.082
1 N4070 56 120 0.005 0.210 0.224
1 N4070A 56 120 0.002 0.084 0.090
lN4071 62 135 0.005 0.232 0.248
lN4071A 62 135 0.002 0.093 0.099
1 N4072 68 5.0 230 0.005 0.255 0.272
lN4072A 68 230 0.002 0.102 0.109
1 N4073 75 250 0.005 0.281 0.300
lN4073A 75 250 0.002 0.113 0.120
1 N4074 82 270 0.005 0.307 0.328
lN4074A 82 270 0.002 0.123 0.131
1 N4075 87 290 0.005 0.326 0.348
1 N4075A 87 290 0.002 0.131 0.139
1 N4076 91 310 0.005 0.341 0.364
1 N4076A 91 310 0.002 0.137 0.146
lN4077 100 340 0.005 0.375 0.400
lN4077A 100 340 0.002 0.150 0.160
lN4078 105 2.5 700 0.005 0.394 0.420
lN4078A 105 700 0.002 0.158 0.168
lN4079 110 740 0.005 0.413 0.440
lN4079A 110 740 0.002 0.165 0.176
1 N4080 120 800 0.005 0.450 0.480
lN4080A 120 800 0.002 0.180 0.192
lN4081 41-10 130 840 0.005 0.488 0.520 2.5
lN4081A 130 840 0.002 0,195 0.208
1 N4082 140 960 0.005 0.525 0.560
lN4082A 140 960 0.002 0.210 0.224
1 N4083 150 1020 0.005 0.563 0.600
lN4083A 150 1020 0.002 0.225 0.240
lN4084 175 1150 0.005 0.656 0.700
1 N4084A 175 1150 0.002 0.263 0.280
lN4085 200 1350 0.005 0.750 0.800
lN4085A 200 1350 0.002 0.300 0.320
"Derate linearly from 25°C to 175°C.
1- 6
1N429/ 1 N 1530/1 N 1735/1 N4057 (continued)
TABLE 2 - ELECTRICAL CHARACTERISTICS (IZT = 7.5 rnA, TA = 250 C unless otherwise noted)
Max Voltage Change

Zener @ Max Dynamic Temperature Power·
Voltage -55, +25, +1oooC Impedance Coefficient Dissipation
Type VZ±5% lNZ (Volts) (Note 3) (Note 2) Po Case Figure
Number (Volts) (Note 2) ZZT (Ohms) (%/oC) (mW) Number Number
1 N429 (j) 6.2 0.050 20 0.01 200 53 1
lNl735 6.2 0.050 20 0.01 200 41-6 2
1 N1530· '" 0.014 0.002

8.4 15 250 57 3
lN1530A •• @ 0.007 0.001
lNl736 0.100 0.01

12.4 40 400 41-3 2
1 N1736A 0.050 0.005
lN1737 0.150 0.01

18.6 60 600 41-5 2
lN1737A 0.075 0.005
lN1738 0.200 0.01
24.8 80 800 41-5 2
lN1738A 0.100 0.005
lN1739 0.250 0.01
31.0 100 1000 41-4 2
lN1739A 0.125 0.005
lN1740 0.300 0.01

37.2 120 1200 41-4 2
1 N1740A 0.150 0.005
lN1741 0.350 0.01

43.4 140 1400 41-4 2
lN1741A 0.175 0.005
lN1742 @ 0.400 0.01

49.6 180 1600 41-4 2
1 N1742A 0.200 0.005
• Derate linearly from 25°C to 175°C CD Available to M I L-S-19500/299 Specifications .

"IZT=10mA ~ Available to MI L-S-19500/320 Specifications.
@ Available to MIL-S-19500/298 Specifications.
TH}=I.
Ii
i
Dl!9
0.200
DIA
I II
I,Q~
, 'i
I 0370
OUTLINE DIMENSIONS IINCHES)
~~D'A
1.062
'KG A , C D
~
MAX MAX 0.002 MIN
41-' 1.00 0.500 0.032 1.25
'</~~HR[E ')' LEADS ~~ DIA
41·2
41-3
0.500
1.030
0.375
0.378
0.032
0.032
1.25
1.25
~---j r---
41 ·4 1.220 0.641 0.032 1.75 1 ~- ~~g
1,.25
1(Q!5 41-5 0.655 0.641 0. 032
Q0055 41·6
41-7
0.520
1.000
4'-8 0.520
41-9 0.780
41 10 1,155
0.275
0.375
0.260
0.260
0.323
002Ir 25
0.032 1.25
0.030 1.00
0.030. 1.00
0.030 1.00
frqb
",8~~
02TI LNOTCONNECTED
FIGURE 1 FIGURE 2 FIGURE 3

CASE 53 CASE 41 CASE 57
1-7
1N42911 N153011 N173511 N4057 (continued)
TEMPERATURE-COMPENSATED REFERENCE DIODES
Temperature compensated reference diodes are made possible by changes in zener current. These variations can be minimized by driv-
taking' advantage of the differing thermal characteristics of forward ing the device from a constant current source.
and reverse biased silicon PN junctions. A forward biased junction NOTE 2 - Voltage Variation (a Vz) and Temperature Coefficient
has a negative temperature cqefficient of approximately 2.0 milli-
volts/DC. Reverse biased junctions above 5.0 volts have a positive All reference diodes are characteri~ed by the "box" method.
temperature coefficient and therefore it is possible by judicious sel- This method provides for a guaranteed maximum voltage variation
ection of combinations of forward and reverse biased junctions to (6, V Z in mY) over a specified temperature range _at the specified
IZT verifie,d by tests at several points within the range. (Maximum
obtain a device which shows a very low temperature coefficient due
voltage v~riations over the specified temper,ature ranges are given in
to cancellati'on. Because of the differing impedance versus tempera- Tables 1 and 2.) The design engineer now has a number (without
ture characteristics of the junctions involved, optimum temperature any calculations) telling him the stability of the voltage over the
stability is obtained by operating in the zener current range at which temperature range of interest thus giving him the maximum flexibil-
the temperature coefficient is a minimum (Figure 4) ity as well as economy in selecting the temperature stability re-
Further information, including a method of effective impedance quired. The referenced military specifications use this approach to
cancellation in a bridge circuit for ,ultra-stable reference supplies, is characterize these devices.
contained in the Zener Diode Handbook. The handbook, containing Since reference diodes have a non-linear voltage-temperature re-
valuable theory, design, and application information, i.s available lationship (illustrated in exploded view, Figure 4) the temperature
from your distributor. coefficients in %/oC are tabulated primarily for reference purposes
and are guaranteed only at the end points of the temperature range.
NOTE 1 - Voltage-Current Characteristics
Figure 4 shows the voltage-current characteristics of a typical NOTE 3 - Zener I mpedance Derivation
temperature compensated unit at thre~ different temperatures. The
The dynamic zener impedance, ZZT, is derived from the 60 Hz
exploded view illustrates the cross-over area (optimum temperature ac voltage which results when an ac current with an rms value equal
stability point). the non-linearity of the temperature-voltage relation- to 10% of the dc zener current. IZT. is superimposed on IZT. A
ship. and the maximum voltage variation (~Vz) for the three temp- cathode-ray tube curve trace test on a sample basis is used to en-
eratures shown. sure, that each zener characteristic has a sharp and stable knee re-
Because of device impedance, the reference voltage will vary with gion.
FIGURE 4'- TYPICAL OPERATING CHARACTERISTICS
...Z
w
a:
~VZ(max) @ IZT-
a:
:::l
()
a:
w
z
W
N
N
VZ, ZENER VOLTAGE (VOLTS)
1-8
1N702 thru 1N745 (ZENER DIODES)
Recommended for applications requiring an exact

replacement only. For new designs and for industry
preferred replacement devices, see IN5221 series.
1/4 watt, 2-200 volts
CASE 51
(00-7)
1N746 thru 1N7 59 1N746A thru 1N759A (ZENER DIODES)

1N4370 thru 1N4372 1N4370A thru 1N4372A
Hermetically sealed, all-glass case with all external
surfaces corrosion resistant.
CASE 51
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
D C Power Dissipation: 400 Milliwatts at 50°C Ambient (Derate 3.2 mW;oC
Above 50°C Ambient)
TOLERANCE DESIGNATIONS
The type numbers shown have tolerance designations as follows:
IN4370 series: ±10%, suffix A for ±5% units.
IN746 series: ±10%, suffix A for ±5% units.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
MAXIMUM REVERSE LEAKAGE CURRENT

NOMINAL MAXIMUM
ZENER VOLTAGE TEST MAXIMUM ZENER IMPEDANCE DC ZENER CURRENT
TYPE V,@I" CURRENT Z" @I" 1,. =
T. 25'C =
T. 150'C
NUMBER I" I.@V. =1V =
I.@ V. 1V
VOLTS mA Ohms mA I'A I'A
I N4370 2.4 20 30 1,0 100 200

IN4371 2.7 20 30 13, 7, 1,0
IN4372 3.0 20 29 120 50 100
IN746 3.3 20 28 110 10 30
IN747 3.6 20 24 100 10 30
IN748 3.9 20 ·23 9, 10 30
IN749 4.3 20 22 8, 2 30
IN750 4.7 20 19 7, 2 30
IN7,1 '.1 20 17 70 I 20
IN7,2 ,.6 20 II 6, I 20
IN7,3
IN7>4
6.2
6.8
20
20 ,
7 60
5>
0.1
0.1
20
20
IN75> 7.' 20 6 ,0 0.1 20

IN7,6 8.2 20 8 4, 0.1 20
IN7,7 9.1 20 10 40 0.1 20
IN7,8 10.0 20 17 3, 0.1 20
IN7,9 12.0 20 30 30 0.1 20
POLARITY: Cathode End. Indicated by Color Band, Will Be Positive When Operate
Operated I n The Zener Region.
1-9
1N746 thru 1N759 (continued)
SPECIAL.se'LECTIONS.AVAILA8LE INCLUDE.: (See Selector Guide for details)

1 - Nominal zener voltages between those shown.' .. .
2 -; "4~~hoerd~~~:: U(~i\~n~~r~e~i~~~~nnCne:c~~~ =;?t"~·~pe~i~i·~jot·O~~~~~· :=nlt~~l ~:ft:~~~nle~i~sv~t:~t::rs~~:i~ake
possible higher
zener voltages and provide lower temperature coefficients. lower dynamic impedance and greater power handling ability.
b. Two or more unit, matched to one another with any: specified tolerance.
3 - Tight voltage tolerances: 1.0%.2.0%.3.0%.
To design·ate units With zener vo"itages ·other than voitage . (Vz) and· test voltage for leakage current will
those listed, the Motorola type number should be conform to the characteristics of the next higher
modified as shown below. Unless otherwise specified, voltage type shown in the ta~le.
the electrical characteristics other than the nominal
EXAMPLE: IN746 series, IN4370 series

.4 'M 3;7 A Z 5
T T T T T
Power Rating Motorola l
Nominal Voltage
Alloy Zener Diode Tolerance (±%)
lN761 thru lN769 Recommended for applications reqUlrmg an exact

replacement only. Fqr new designs /;lee IN5221 series.
1-10
.4M.64FRlO/lN8l6
.4Ml.36FRS
.4Ml.36FR2
.4M2.04FRS
.4M2.04FR2
MZ2360
MZ236l
MZ2362 CONSTANT-VOLTAGE REFERENCE DIODES FOR
LOW-VOLTAGE APPLICATIONS
.. high·conductance silicon diodes designed as a stable forward

reference source for biasing transistor amplifiers and similar applica-
tions.
• Guaranteed Forward Voltage Range

• Choice of Package
• Temperature Effects Provided
MAXIMUM RATINGS
DC Power Dissipation Po 400 mW

@ TL ~ 300 C ±30C. FORWARD REFERENCE
Lead Length = 3/8" DIODES
- STABISTORS-
Operating and Storage Junction TJ. T stg -6510+175 °c
Temperature Range
.4M1.36FR5
.4M1.36FR2
.4M2.04FR5
.4M2.04FA2
MZ2361
MZ2362
Case: Choice of package, either Glass or Surmetic

Dimensions: See outline drawings
finish: All external surfaces are corrosion resistant and leads are readily solder-
able and weldable
Polarity: Cathode indicated by polarity band. Cathode negative for forward
reference application.
Weight: 0.2 Gram (approximate)
Mounting Positions: Any
1-11
.4M.64FR10/l N816,.4Ml.36FR5, .4Ml.36FR2, .4M2.04FR5,
.4M2.04FR2, MZ2360, MZ2361, MZ2362 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25 0 C unless otherwise noted)
Forward Reference Reverse Leakage

Voltage (1) Current (Max)
@ @
VF IF IR VR
Type Number Volts rnA }.IA Volts Package Case
MiniMax
.4M.64FR 101
0.5B/0.70 1.0 0.1 4.0 Glass 51
lNB16* (2)
.4Ml.36FR5 1.29/1043 10 0.1 4.0 Glass 51
o4M1.36FR2 1.33/1.39 10 0.1 4.0 Glass 51
o4M2.04FR5 1.94/2.14 10 0.1 4.0 Glass 51
o4M2.04FR2 2.00/2.0B 10 0.1 4.0 Glass 51
MZ2360 0.63/0.71 10 10 5.0 Surmetic 59
MZ2361 1.24/1.3B 10 10 5.0 Surmetic 51
MZ2362 1.90/2.10 10 10 5.0 Glass 51
*Indicates JEDEC Registered Data for lN816

(1) Motorola guarantees the forward reference voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C
.±- 1°C, 3/8" from the diode body.
(2) Minimum Saturation Voltage for lN816 "" 40 V @ 100 p.A.
8
.....,I II-- 0J.IIIl
MZ2360 OIA
.4M.64FR 1011 N816 0.107
.4Ml.36FR5 - f--- ~.~~ OIA
o4Ml.36FR2
.4M2.04FR5
.4M2.04FR2
MZ2361
MZ2362
0030
1 10 [034
CASE 51 CASE 59
00·7 0041
POLARITY MARK
ICATHOOEI
100 MIN ,
110
MIN
All JEDEC dimensions and notes apply All JEDEC dimenSions and notes apply
1-12
.4M.64FR10/1N816, .4M1.36FR5, .4M1.36FR2, .4M2.04FR5,
.4M2.04FR2, MZ2360, MZ2361, MZ2362(continued)
TYPICAL FORWARD VOLTAGE CHARACTERISTICS
FIGURE 1 - .4M.64FR10/1N816 FIGURE 2 - .4Ml.36FRS
10 100
7.0 70
5.0 50
;;( TJ 1250C / TJ-25OC- ;;(
E
0
I I , E 125OC.7 F---- TF 250C i
§ I
... TJ
~
~
2.0
I 1 I ~
~
0
/ I'I .'
I / '/
is I I Max
"
Min =>
C>
~
1.0
~ 1
0
<t 0.7 7.0
~
0
0.5 ~
o
5.0
/ Min it- r----f Max - )---
~
I / J
:f
0.2 2.0 .-
I L / L
0.1 / / 1.0 / /11' /
o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.6 0.7 0.8 0,9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
VF. FORWARD VOLTAGE (VOLTS) VF. FORWARD VOLTAGE (VOLTS)
FIGURE 3 - .4M2.04FRS FIGURE 4 - MZ2360
100 100
70 0
50 50
;;( TJ-125 0C I Tr 250C- TJ - 125°C / TJ 25 0C -
II
...E a
~
~
/
0
/11
G 10 / Min ,~ I Max
a I Min 1/ I Max
~ 7.0
~ 5.0
/ 0
I
~ / I
:f
2.0
/ 1/ ,- I .'/
1.0 L ~ I 1.0 / IiI
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 .24 2.6 o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, FORWARO VOLTAGE (VOLTS) VF. FORWARO VOLTAGE (VOLTS)
FIGURE S - MZ2361 FIGURE 6 - MZ2362

100 10 0
a 70
0 50
;;( 1250C If
TJ 0 125 0CjL-TJ 0 25°C i ;;( TJ 0 TJ o 250C-
E .'
E
!z ... ,
~
~
20
./ I I ~ 2a /
~
is
~ 10
/ Min I / Max
3 10 / Min I Max
~ 7.0 ~ 7.0
~ 5.0 /
~ 5.0
f I
~ f
:f
2.0 2. 0
/ I / Ii /
1.0 / / V 1. 0 V /
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VF. rORWARO VOLTAGE (VOLTS) VF. FORWARO VOLTAGE (VOLTS)
1-13
.4M.64FR10/1N816, .4M1.36FRS, .4M1.36FR2, .4M2.04FRS,
.4M2.04FR2, MZ2360, MZ2361, MZ2362 (continued)
TYPICAL TEMPERATURE COEFFICIENT
FIGURE 7 - .4M.64FR10/1N816 FIGURE 8 - MZ2360

+1.0 +1.0
G
3;
.s
>-
15
;:;
~
8 -1.0
-
w
'"=>>-
~ -2.0 /' . / f.-
ai>-
u:
~
-3.0 -3. 0
o 1.0 2.0 3.0 4.0 5.0 6.0 7.0 B.O 9.0 10 10 20 30 40 50 60 70 BO 90 100
IF, FORWARD CURRENT (rnA) IF, FORWARD CURRENT (mAl
FIGURE 9 - .4M1,36FR5/MZ2361 FIGURE 10 - .4M2.04FR5/MZ2362

+2.0
~ G
:;; 3;
-
.s .s
>- 0 >- -2.0
--
15 15
;:; b---:
~
~
w
~
w I-- r--
8 -2. 0 8 -4.0
---
w w
'"=> '" ./'"
g~ -4.0
. / V-
i':
~_ -6.0 /
>-
ai>-
u: u:
~ ,£'
-6. 0 -B. 0
10 20 30 40 50 60 70 BO 90 100 10 20 30 40 50 60 70 BO 90 100
IF, FORWARD CURRENT (mAl IF. FORWARD CURRENT (mAl
1-14
lN821, A, lN823, A(SILICON)
lN825, A, lN827, A
lN829, A
Temperature-compensated zener reference diodes util-

izing an oxide-passivated junction for long-term voltage
stability. RamRod construction provides a rugged, glass-
enclosed, hermetically sealed structure.
CASE 51
MAXIMUM RATINGS (00·7)
Junction Temperature: -55 to +175 0 C

Storage Temperature: -65 to +175 0 C
DC Power Dissipation: 400 mW @ T A = 50°C
CASE: Hermetically sealed, all-glass

DIMENSIONS: See outline drawing.
FINISH: All external surfaces are corrosion resistant and leads are readily sold-
erable and weldable.
POLARITY: Cathode indicated by polarity band.
WEIGHT: 0.2 Gram (approx)

MOUNTING POSITION: Any
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Maximum Ambient
Maximum
JEDEC Voltage Temperature DynamiC
Test
Type No. Change Temperature
Coefficient Impedance
(Note 1) !>.V Z (Volts) °c 'o/"C ZZT Ohms
±loC (Note 2)
(Note 2) (Note 3)
Vz = 6.2 V ±5.0'0* @ IZT = 7.5 rnA
1N821 0.096 -55, 0, +25, +75, +100 0.01 15

1N823 0.048 0.005
1N825
1N827
1N829
1N821A
1N823A
0.019
0.009
0.005
0.096
0.048
0.002
0.001
0.0005
0.01
0.005
I
10
1N825A 0.019 0.002

1N827A
1N829A
0.009
0.005
0.001
0.0005
j
*Tighter-tolerance units available on special request.
CAPACITANCE (C) = 30 to 400 pF @ 90'601 VZ

FORWARD BREAKDOWN VOLTAGE (VI) = 15 to 400 V
1-15
lN821,A /lN823,A /lN825,A /lN827,A /lN829,A(continu,ed)
MAXIMUM VOLTAGE CHANGE versus AMBIENT TEMPERATURE

(with IZT = 7.5 rnA ±O.Ol rnA) (See Note 4)
1N821 thru 1N829
FIGURE 1a FIGURE 1b
.~+
----+-i
+---+---------1"--1
.
H-+_--1t'"--_-+__'"'-_+_' N~~!,±. ---j-.-----1
-------'-------.-.j
fYc~__""+~--""""F_---+-1N829,AL-----i----~
-75~---
-looL_ _L_--,i,....-_-L==±==±::::=::::J
-55 100
TA, AMBIENT TEMPERATURE (OC)
ZENER CURRENT versus MAXIMUM VOLTAGE CHANGE

(At Specified Temperatures)
(See Note 5)
MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES.
FIGURE 2 - 1N821 SERIES FIGURE 3 - 1N821A SERIES
10
I--
.
TI - - - - 10
9.0 - I
---1------
I
9.0
i i
'"'
.5 8.0
---+~~~t==-- '"'
E
r-
8.0
~ 7,5 i5
'"'"co
7.5
'"~ 7.0
u
7.0
'"zw '"
w
z
w 6.0 w 6.0
N N
!9 !9
5.0 5.0
4.0
25 50 -75
·.Vz, MAXIMUM VOLTAGE CHANGE (mV) Vz, MAXIMUM VOLTAGE CHANGE (mV)
(Referenced to IZT" 7.5 rnA) (Referenced to lZT " 7.5 rnA)
1-16
1N821,A / 1N823,A / 1N825,A / 1N827,A / 1N829,A (continued)
MAXIMUM ZENER IMPEDANCE versus ZENER CURRENT

(See Note 3)
MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES.
FIGURE 4 - 1N821 SERIES FIGURE 5 - 1N821A SERIES

1000
800 .-
~ :~
0
:z: 0r----_ -,-----.
~ 200
_.. _...
~ 10 O~ --
~ ~ 00
~ 40 25 0 C -
--
~ '"w .~
i:i'N i 20
i:i'i 0 :-;;-1 00oC
~ ~;o
I I
10 N 10 !
---
~ 8.0 ~ 8. 0 - .
'"x 6.0
4.0 r---'
'"
~
6. 0
4. 0 _ _ -:-55 0 C
''"N"
N
2.0
1.0
-- '"
f1 2. 0
1. 0
--
I
~ :::-
1.0 2.0 4.0 6.0 8.0 10 20 40 60 80100 1.0 2.0 4.0 6.0 8.0 10 20 40 60 80100
IZ. ZENER CURRENT ImAI IZ. ZENER CURRENT ImAI
FIGURE 6 - DISTRIBUTION OF MAXIMUM GENERATED NOISE

1.0
I~T = 7.5 ml ./'" V

8- BANDWIDTH = 500 Hz
- V !
6
./
/
/ I
4
/ - I
--
2
. . .,v
/'
0 ~
10 20 30 40 50 100 200 400 1000
fC. CENTER FREQUENCY IkHzl
NOTE 1: equal to 10% of the dc zener current. 'ZT, is superimposed on IZT.

Types lN821. lN823, lN825, lN827, and lN829 are available to Curves showing the variation of zenar impedance with zener current
MIL-S-19500/159. for each series are given in Figures 4 and 5. A cathode·ray tube
curve-trace test on a sample basis is used to ensure that each zener
NOTE 2: characteristic has a sharp and stable knee region.
Voltage Variation (D, VZ) and Temperature Coefficient. NOTE 4:
All reference diodes are characterized by the "box method". This These graphs can be used to determine the maximum voltage change
guarantees a maximum voltage variation (AVZ) over the specified of any device in the series over any specific temperature range. For
temperature range. at the specified test current (lZT), verified by example, a temperature change from 0 to +500 C will cause a volt·
tests at indicated temperature points within the range. Vz is meas- age change no greater than +31 mV or -31 mV for lN821 or lN821A.
ured and recorded at each' temperature specified. The.~ Vz between as illustrated by the dashed lines in Figure 1. The. boundaries given
the highest and lowest" v~lues must not exceed the maximum AVZ are maximum values. For greater resolution, an expanded view of
given. This method of indicating voltage stability is now used for the shaded area in Figure 1a is shown in Figure 1b.
JEDEC registration as well as for military qualification. Ttle former NOTE 5:
method of indicating voltage stability - by means of temperature
The maximum voltage change. ~ VZ, Figures 2 and 3 is due en-
coefficient -accurately reflects the voltage deviation at_ the tempera·
tirely to the impedance of the device. If both temperature and IZT
ture extremes, but is not necessarily accurate within the tempera·
are varied, then the total voltage change may be obtained by graph-
ture range because reference diodes have a nonlinear temperature
ically adding ~ Vz in Figure 2 or 3 to the ~ Vz in Figure 1 for the
relationship. The temperature coefficient, therefore, is given only
device under consideration. If the device is to be operated at some
as a reference.
stable current other than the specified test current, a new set of
NOTE 3: characteristics m.ay be plotted by superimposing the data in Figure 2
The dynamic zener impedance, ZZT, is derived from the SO-Hz ac or 3 on Figure 1. For a more detailed explanation see AN·437
voltage drop which results when an ac current with an rms value (Application Note).
1-17
lN93S, A, B(SILICON)
thru
lN939, A, B
MAXIMUM RATINGS
CASE 51
Junction Temperature: -55 to +175 0 C (00-7)

DC Power Dissipation: 500 mW @ T A = 25 0 C

FINISH: All external surfaces are corrosion resistant and leads are readily sold·
WEIGHT: 0.2 Gram(approx)
ELECTRICAL CHARACTERISTICS (T A ~ 25'C unless otherwise noted)
Maximum Ambient Maximum

Voltage Test Dynamic
Temperature
Change Impedance
JEDEC Temperature Coefficient
t;V Z (Volts) °c chlOe ZZT (Ohms)
Type No.
(Note I) (Note 2) ±loC (Note 2) (Note 3)
Vz = 9.0 V ±5.0'·0* @ IZT = 7.5mA
IN935 0.067 0.01

--
IN936 0.033 0.005
IN937 0.013 0, +25, +75 0.002 20
IN938 0.006 0.001
IN939 0.003 0.0005
IN935A 0.139 0.01

IN936A 0.069 0.005
-55, 0, +25,
IN937A 0.027 0.002 20
+75, +100
IN938A 0.013 0.001
IN939A 0.007 0.0005
IN935B 0.184 0.01

IN936B 0.092 0.005
-55, 0, +25,
IN937B 0.037 0.002 20
+75, +100, +150
IN938B 0.018 0.001
IN939B 0.009 0.0005
CAPACITANCE (C) = 20 to 180 pF @ 90'0 oj Vz

FORWARD BREAKDOWN VOLTAGE Wf ) = 100 to 800 V
1-18
1N935, A, B thru 1N939, A, B (continued)
MAXIMUM VOLTAGE CHANGE versus TEMPERATURE

(with IZT = 1:5 mA ±O.Ol mAl (See Note 4)
1 N935 thru 1 N939

FIGURE 1a FIGURE 1b
75r-----,-----,----,-----,-----,-----,
lN935
50~----~----~--~----~-----~----~
lN936 lN937
lN938
lN939
lN939
lN938
AVZ = -22-1i mV I -1O~~r--~- ---+---'''''''':--+------+---

l __ ~ __ _ lN937
-15~--_\c-+--_'lr--+_--
-50/-----+I--+T--t-----t----t---H
I lN935
-20 ~------\---
I
-75-!:-0----::2!:-5---::5!:-0---:!7::-5--~--~-----'
o 50 75
TA. AMBIENT TEMPERATU RE (OC)

(with IZT :::; 7.5 mA ±O.Ol mAl (See Note 4)
1 N935A thru 1 N939A

FIGURE 2a FIGURE 2b
150
IZT = ~_5 mA
lN935A 0 lN935A I I lN936A
100 l/ 0
I
I
I
lL
/
/ --
V
0
lN936A I ..,... lN937A
I / ./
~ 20
I / ./
~ V
- -
}
lN937A 0 // V 1N938A
'I/, ~ lN939A
~ =.1.- lN938A
~~ -:::::-
lN939A t::I
f-- UA
1N937A
I
I
o ~
-10
:--..;:- r--
\'\.
\\.
...... t--..
-
-............
--
~ ....... lN939A
........ lN938A
--
\ \. "-
~
---.j
-100
'" lN936A
-2 0
-3 0
\
\
\
'\.
\ " lN937A
'\ -4 0 \ \ , \ lN936A
--I----r--
-150 1 N935A -5 0 lN935A

-55 50 100 150 -55 50 100
TA. AMBIENT TEMPERATURE (OC)
1-19

Iwith I ZT 0 7.5 mA ±O.Ol mAl ISee Note 4)
1 N935B thru 1 N939B

FIGURE 3a FIGURE 3b
-
200 50 lN935B I / lN936B
-f--_.
'>
.§.
150
100
40
30
20
'ri-I
I /
I
I
/'
,/
./" --
r---- ;937B 1-
.- -
I
---- -.....
w
I 1 ./
~
~ _ 50
1/ ,..,- i
_._- 1 N938B . -
'-'5'
w~
",,?
10
/././
~
--.... 1N939B
~.;
'"0
o B 0
~
> 0
3~ ........ 1 N939B
~
2£ -10 "-
x --50 \'\. --......... I
'"N
2
-20 \ '\ ~ lN938B
>~
-100
\ 1'\ i
-30 \ ""'" ""
'\
\- ---~ --~-~
.-
------
lN937S-
-150
-40 f------\ --
-50 i\lN935B t\.-1~936B

-55 50 100 150
TA. AMBIENT TEMPERATURE 1°C)
FIGURE 4 - ZENER CURRENT versus MAXIMUM FIGURE 5 - MAXIMUM ZENER IMPEDANCE

VOLTAGE CHANGE lat specified temperatures) versus ZENER CURRENT
(See .N ote 5) (See Note 3)
10 - --- -rn:c---·- -----"1

MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES 1000 MORE
800 === =
THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES
9.0 t-----t---
-550C +1500 C
c;:; 600
~ 400
!? - - - - .-
_. - -
--
fA"t' :f--.
--
+75 0 C ~ 200
z ~ sotcl
::::- 11
-.., 8.0 -----~----+....,.- '" 100
.§.
----~-_i.--- ~ ~~
,...
~ 7.0
cr: -j-- ~ 40 - -
= -t
i-+= -
~-
'"'-'=> I ~ 20 - -
I-
~ 6.0 2 10 . --
-55°C
~ ..- 25°C
~-
z => 8. 0
~ 6. 0 =
r- r- -
W
N
~ 4.0
!iJ 5.01----I-~7'7LllooL-- 2 ----
N
N
2. 0 - · i--
4.0 L -_ _ _ '--I<-<-..L-~'__ _ _- ' -_ _ __ L_ _ __ "
1. 0
-150 -100 -50 50 100 0.1 1.0 10 100
WZ. MAXIMUM VOLTAGE CHANGE ImV) IZ, ZENER CURRENT ImA)
(Referenced to IZT::: 7.5 mAl
1-20

20
2
IZT = 7.5 rnA
f---BAN OWl OTH = 500 Hz
:/
-j
V
/
..
r--: t- r-
- !--
1"-
0
j
4.0
/
V
o~
10 20 30 40 50 100 200 400 10 00
fe, CENTER FREUUENCY (kHz)
NOTE 1:
Types 1N935B, 1N937B, and 1N939B are available ta MIL-S·19500/ Curves showing the variation of zener impedance with zener current
156. for each series are given in Figure 5. A cathode-ray tube curve-trace
test on a sample basis is used to ensure that each zener characteristic
NOTE 2:
has a sharp and stable knee region.
Voltage Variation (nVz) and Temperature Coefficient.
NOTE 4:
All reference diodes are characterized by the "box method". This
These graphs can be used to determine the maximum voltage change
guarantees a maximum voltage variation (.~VZ) over the specified
of any device in the series over any specific temperature range. For
temperature range, at the specified test current (lZT). verified by
example, a temperature change from +25 to +50 0 C will cause a volt·
tests at indicated temperature points within the range. This method
age change no greater than +22 mV or -22 mV for 1 N935, as illus·
of indicating voltage stability is now used for JEDEC registration as
well as for military qualification. The former method of indicating trated by the dashed lines in Figure 1. The boundaries given are
maximum values. For greater resolution, expanded views of the
voltage stability - by means of temperature coefficient - accurately
shaded areas in Figures 1a, 2a, and 3a are shown in Figures 1b, 2b,
reflects the voltage deviation at the temperature extremes, but is not
and 3b respectively.
necessarily accu~ate within the temperature range because reference
diodes have a nonlinear temperature relationship. The temperature NOTE 5:
coefficient, therefore, is given only as a reference. The maximum voltage change, 6VZ, in Figure 4 is due entirely to the
NOTE 3: impedance of the device. If both temperature and IZT are varied,
Zener I mpedance Derivation then the total voltage change may be obtained by adding b..VZ in Fig-
ure 4 to the b.. Vz in Figure 1, 2, or 3 for the device under considera-
The dynamic zener impedance, ZZT, is derived from the 60-Hz ac
tion. If the device is to be operated at some stable current other
voltage drop which results when an ae current with an rms value
than the specified test current, a new set of characteristics may be
equal to 10% of the dc zener current, IZT, is superimposed on IZT.
plotted by superimposing the data in Figure 4 on Figure 1,2, or 3.
1-21
N941 I A, B(SILICON)
1
thru
lN945, A, B
MAXIMUM RATINGS
Junction Temperature: -55 to +175 0 C CASE 51
(00-7)
FINISH: All external surfaces are corrosion resistant and leads are readily sold-
ELECTRICAL CHARACTERISTICS (TA = 2S'C unless otherwise noted)
Maximum
Voltage Ambient Maximum
Change Test Temperature
Coefficient Impedance
JEDEC AV Z (Volts) Temperature
Type No. °c "'orc ZZT (Ohms)
(Note 1) (Note 2) ±loC (Note 2) (Note 3)
Vz = 11.7 V ±5.0%* @ IZT = 7.5 rnA
IN941 0.088 0.01

IN942 0.044 0;005
IN943 0.018 0.002
0, +25, +75 30
IN944 0.009 0.001
1N945 0.004 0.0005
IN941A 0.181 0.01

IN942A 0.090 0.005
IN943A 0.036 -55, 0, +25, 0.002
30
1N944A 0.018 +75, +100 0.001
1N945A 0.009 0.0005
1N941B 0.239 0.01

1N942B 0.120 0.005
1N943B 0.047 -55, 0, +25, 0.002
30
IN944B 0.024 +75, +100, +150 0.001
IN945B 0.012 0.0005
CAPACITANCE (C) = 14 to 35 pF@ 90% of Vz

FORWARD BREAKDOWN VOLTAGE (Vf ) = 150 to 1200 V
1-22

(With IZT= 7.5 mA :l0.01 rnA) (See Note 4)
1N94 1 thru 1N945

FIGURE 1a FIGURE 1b
100r----,----,------,---r---,------,
15
~±~--+~-
lN941/ /lN941
10 I -----+--- /
751-----+- I lN943 i
15
i/-I --7L..
I /
-------+-
. ---t---
./
I .
10
1/ lN944
5.0
1/ / .....-
/ / ....- --.....
~ lN945
::----- -......... ............

o~-- ""-
t"--... --...... lN945
-5.
-10 \ '\.
-......... I
'" " 1N944 !
-751-----f---r--,~---+---+--+-I
-1 5
\
\
\
'\.
'\
'" '\ '\.
lN943
I
-1 0 \ \ I
\ \.
lN941 lN941
-100~0---=----=----:!75::-----'----'----' -1 5
o 15 50 75
TA. AMBIENT TEMPERATURE IOC)

(With IZT = 7.5 rnA ±O.Ol mA) (See Note 4)
1N941A thru 1N945A

FIGURE 2a FIGURE 2b
100 0
I--l~lA 1/1/ N941A
150 £ lN941A
/ /
V I / ./
1N943A
;; 100 / 5
I / '/
I / V
.s
w
'"~_ 50 / V/ V-- lNy1A
-- -
1//
1/ / /
1N944A
~ I-:::::::
}
~~ V lN943A
II//....;
--
............
w~
,-,'
",3
~ -g 0
1N945A
,
1 N944A
0
~ ............--...... lN945A
lN94h.-~4A ~ ............
I
~ b-.. -:::::::
D~ ............ 1N945A
>E
>;."
~~-50
x
lN943A
N9~1A
\'\.
\ \ '"""- '" ""- --
~ ~
lN944A
'">; 1
\ \ '\.
~ -100 -1 5 \ \ '\.
\ \
"",- \ \ \ 1N943A
-150 \ \
'\ lN941A
-5 0
lN941A \
\
\
\
lN941A
-100
-55 50 100 -55 50 100
TA. AMBIENT TEMPERATURE IOC)
1-23
1N941 , A, B thru 1N945, A, B (continued)

(with 'ZT " 7.5 mA ±O.Ol mA) (See Note 4)
lN941B thru lN945B

FIGURE 3a FIGURE 3b
250
200 ~ 1N9tB
0 I
lN~41B I
I
/ '" - - "-
150 /' I I
/lN942B
t 1
/
/
lN943B
0 / ..,. ..--
IN942B 5
1/ / ,... ......
,""'""'"
I / ",
o / '/ 1/// ~-- -"'::::::..
o~
~ -== r:'91~ IN914~B
-1:.""",. lN944B .1.1
-..:..::::: ~IN9:;;;;r ) a
,~
,,-:.
~ -~
..... ,
'\. -
'\
....
lN944B
1N945B
0
----
~
.............
~
1N943B
\"\.
\ '\.
\ \.
\ \.
"""" ~
."
.........
\.
lN944B
lN945B
-15 0 ~ "" 1N942B

-2 5
\ \ \
\ \ \
-20 0
~ \ \. \.
\ \
-250
'\ lN9~1B -5 a lN941B i\ lN942B
lN943B
-55 50 lOa' 150 -55 50 lOa 150

TA, AMBIENT TEMPERATURE (OC)
FIGURE 4 - ZENER CURRENT versus MAXIMUM FIGURE 5 - MAXIMUM ZENER IMPEDANCE versus
VOLTAGE CHANGE (At specified temperatures) ZENER CURRENT
(See Note 5) (See Note 3)
MORE THAN 95% OF THE UNITS ARE IN THE RANGI::S INDICATED BY THE CURVES MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES
lO.------,-------r------.-----~7I~--, lOa a
9.0 f------+-------+------+_---H,/¥'I------_j
.;' 150°C
~ ~
;: 8.0f------+-------+----- ,,...--1----4 0
~ 7.5 ----~~
'"G 7.0 f--------+------+---..,,....+------+-------I
'"w -55°C ~
~
N 6.0f------+------"J~~----+_-----l------_j a
!9
5.0~~~~~~~-=::~~~-+~~~ - 25 0 cL
1. a
50 lOa a 1.0 10 lOa
AVZ, MAXIMUM VOLTAGE CHANGE IZ, ZENER CURRENT (rnA)
(Referenced to IZT = 7.5 rnA)
1-24

50
0
r-- r-
-
0
0
IZT" 7.5 mA
BANDWIDTH" 500 Hz
..... r-.
--- - r-_
-- r-
-
0
0
10 20 30 40 50 100 200 400 1000
fe, CENTER FREQUENCY (kHzl
NOTE 1:
Curves showing the variation of zener impedance with zener current
Types lN941B. lN943B. and lN944B are available to MIL-S-195001 for each series are given in Figure 5. A cathode-ray tube curve-trace
157. test on a sample basis is used to ensure that each zener characteristic
NOTE 2: has a sharp and stable knee region.
Voltage Variation (6VZ) and Temperature Coefficient. NOTE 4:
All reference diodes are characterized by the "box method". This These graphs can be used to determine the maximum voltage change
guarantees a maximum voltage variation (~VZ) over the specified of any device in the series over any specific temperature range. For
temperature range, at the specified test current (IZTL verified by example, a temperature change from +25 to +500 C will cause a volt-
tests at indicated temperature points within the range. This method age change no greater than +29 mV or -28 mV for lN941. as illus-
of indicating voltage stability is now used for JEDEC registration as trated by the dashed lines in Figure 1. The boundaries given are
well as for military qual ification. The former method of indicating maximum values. For greater resolution, expanded views of the
voltage stability - by means of temperature coefficient - accurately shaded areas in Figures la, 2a, and 3a are shown in Figures lb, 2b,
reflects the voltage deviation at the temperature extremes, but is not and 3b respectively.
necessarily accurate with in the temperature range because reference
NOTE 5:
diodes have a nonlinear temperature relationship. The temperature
coefficient, therefore, is given only as a reference. The maximum voltage change, 6. VZ, in Figure 4 is due entirely to the
impedance of the device. If both temperature and IZT are varied,
NOTE 3:
then the total voltage change may be obtained by adding'" Vz in Fig-
Zener Impedance Derivation ure 4 to the /j, Vz in Figure 1, 2, or 3 for the device under considera-
The dynamic zener impedance, ZZT, is derived from the 60-Hz ae tion. If the device is to be operated at some stable current other
voltage drop which results when an ac current with an rms value than the specified test current, a new set of characteristics may be
equal to 10% of the dc zener current, IZT, is superimposed on IZT' plotted by superimposing the data in Figure 4 on Figure 1,2, or 3.
1-25
lN9S7 thru lN992
Hermetically sealed, all-glass case with all external

surfaces corrosion resistant. Cathode end, indicated
CASE 51
(00-7) by color band, will be positive with respect to anode end
when operated in the zener region.
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
D C Power Dissipation: 400 Milliwatts at 50°C Ambient (Derate 3.2 mW;oC
Above 50°C Ambient)
TOLERANCE DESIGNATIONS
With no suffix, tolerance is ±20%, for ±10% units, add suffix A, for ±5% units,
add suffix B.
ELECTRICAL CHARACTERISTICS (TA= 2S0C unless otherwise noted)

Motorola Guarantees the Zener Voltage at 90 Seconds with Lead Temperature of 30o C± 1°C. 3/8" from Unit Body.
NOMINAL MAXIMUM ZENER IMPEDANCE MAXIMUM REYERSE LEAKAGE CURRENT

ZENER VOLTAGE TEST DC ZENER CURRENT
TYPE VI CURRENT Iz_
NUMBER I" 1"@I" 1,,@Iz, I" I, MAXIMUM TEST VOLlASE YR·
VOLTS mA Ohms Dbms mA mA (,.AI YR' Yu
IN957 6.8 18.5 4.5 700 1.0 47 ISO 5.2 4.9
IN958 7.5 16.5 5.5 700 0.5 42 75 5.7 5.4
IN959 8.2 IS 6.5 700 0.5 38 50 6.2 5.9
IN960 9.1 14 7.5 700 0.5 35 25 69 6.6
IN961 10 12.5 8.5 700 0.25 32 10 7.6 7.2
IN962 11 11.5 9.5 700 0.25 28 5 8.4 8.0
IN963 12 10.5 11.5 700 0.25 26 5 9.1 8.6

IN964 13 9.5 13 700 0.25 24 5 9.9 9.4
IN965 IS 8.5 16 700 0.25 21 5 11.4 10.8
IN966 16 7.8 17 700 0.25 19 5 12.2 11.5
IN967 18 7.0 21 750 0.25 17 5 13.7 13.0
IN968 20 6.2 25 750 0.25 IS 5 15.2 14.4
IN969 22 5.6 29 750 0.25 14 5 16.7 15.8

IN970 24 5.2 33 750 0.25 13 5 18.2 17.3
IN971 27 4.6 41 750 0.25 11 5 20.6 19.4
IN972 30 4.2 49 1000 0.25 10 5 22.8 21.6
IN973 33 3.8 58 1000 0.25 9.2 5 25.1 23.8
IN974 36 3.4 70 1000 0.25 8.5 5 27.4 25.9
IN975 39 3.2 80 1000 0.25 7.8 5 29.7 28.1
IN976 43 3.0 93 1500 0.25 7.0 5 32.7 31.0
IN977 47 2.7 lOS 1500 0.25 6.4 5 35.8 33.8
IN978 51 2.5 125 1500 0.25 5.9 5 38.8 36.7
IN979 56 2.2 ISO 2000 0.25 5.4 5 42.6 40.3
IN980 62 2.0 185 2000 0.25 4.9 5 47.1 44.6
IN981 68 1.8 230 2000 0.25 4.5 5 51.7 49.0
IN982 75 1.7 270 2000 0.25 4.0 5 56.0 54.0
IN983 82 1.5 330 3000 0.25 3.7 5 62.2 59.0
IN984 91 1.4 400 3000 0.25 3.3 5 69.2 65.5
IN985 100 1.3 500 3000 0.25 3.0 5 76.0 72.0
IN986 110 1.1 750 4000 0.25 2.7 5 83.6 79.2
IN987 120 1.0 900 4500 0.25 2.5 5 91.2 86.4
IN988 130 0.95 1100 5000 0.25 2.3 5 98.8 93.6
IN989 ISO 0.85 1500 6000 0.25 2.0 5 114.0 108.0
IN990 160 0.80 1700 6500 0.25 1.9 5 121.6 115.2
IN991 180 0.68 2200 7100 0.25 1.7 5 136.8 129.6
IN992 200 0.65 2500 8000 0.25 1.5 5 152.0 144.0
1-26
1 N957 thru 1N992 (continued)
SPECIAL SELECTIONS AVAILABLE INCLUDE: (See Selector Guida for details)

1 - Nominal zener voltages between those shown.
2 - Matched sets: (Standard Tolerances are ±5.0%. ±3.0%. ±2.0%. ±1.0%) depending on voltage per device.
a. Two or more units for series connection with specified tolerance on total vOfta~e. Series matched sets make possible hi.her
b. f:,noe~;~~~~e~n~t~d':!f~~~~ ~~Wae~et:~cftt,:t~~:hC:~~f~C~::lie~O~1~r:~~:~iC imps anee and .reater power handling ability.
3 - Tight voltage tolerances: 1.0%.2.0%.3.0%.
*VR1 - Test Voltage for 5% Tolerance Device

VR2 - Test Voltage for 10% Tolerance Device
No Leakage Specified as 20% Tolerance Device
To designate units with zener voltages other than voltage (V z) and test voltage for leakage current will
those listed, the Motorola type number should be conform to the characteristics of the next higher
modified as shown below. Unless otherwise specified, voltage type shown in the table.
the electrical characteristics other than the nominal
EXAMPLE: IN957 series
.4 M 115 Z 3
T
Power Rating Motorola
T
l T
Zener Diode
T
Tolerance (±%)
Nominal Voltage
1N 1183thru 1N 1190 (SILICON)
Medium current silicon rectifiers. Unique double-

case construction consists of hermetically sealed inner
metallic case surrounded by molded external case;
provides highest degree of ruggedness and reliability .
CASE 42
(00-5) Type numbers shown have cathode connected to case ,
but reverse-polarity units can be obtained by adding
suffix "R" to standard type number, e. g. IN U83R.
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage VRM (rep) Volts

and
DC Blocking Voltage VR
1N1l83 50
1N1l84 100
IN1l85 150
1N1l86 200
1N1l87 300
IN1l88 400
1N1l89 500
1N1l90 600
RMS Reverse Voltage V Volts

r
1N1l83 35
1N1l84 70
1N1l85 105
1N1l86 140
IN1l87 210
IN1l88 280
1N1l89 350
IN1l90 420
Average 1/2-Wave Rectified Forward 10 Amp

Current
(Resistive Load, 60 Hz, TC = 140°C) 35
Peak Repetitive Forward Current Amp

IFM (rep)
(TC = 140°C) 150
Peak Surge Current Amp

IFM (surge)
(TC = 140°C, superimposed on Rated 400
Current at Rated Voltage)
Operating and Storage Temperature T J , T stg -65 to +190 °C
Thermal Impedance 1.0 °C/W,

°JC
DC steady state
1-28
1Nl183 thru 1N1190 (continued)
Characteristics Symbol Value Unit
Max Full Cycle Average Forward Voltage Drop VF(AV) Volts

0.6
(10 (max)' rated Vr ' 60 Hz, TC = 140°C)
Max Instantaneous Forward Voltage Drop VF 1.3 Volts

(IF = 100 Amps, T J = 25°C)
Max Full Cycle Average Reverse Current ~(AV) 10.0 rnA

(10 (max)' rated Vr' 60 Hz, TC = 140°C)
1.0 rnA
Max DC Reverse Current
~
(Rated VIt ' TC = 25°)
MAXIMUM AVERAGE FORWARD CURRENT RATING

versus MAXIMUM CASE TEMPERATURE TYPICAL FORWARD CHARACTERISTICS
(60 CPS, RESISTIVE OR INDUCTIVE LOAD)
45 " J, 1000
~
800
600
40
\DC 400 ....!!: .....-
~
r-r} iL .",
c:: 35 ~ 200
:::;:
5.
I-
z 30
""
""
""
=>
J'
1\ \
I</> AND 3</>'
r\ \
I-
Z
~
""<.>
=>
100
80
/ r
c.> 0 60
0 25 r: ""~ 40 I
""
~
...""
0 20 i""
\ .\ ""0
.....
eI)
I
I
:::> 20
""
""
""> 15
"" 1'\ \\ 0
""
z TJ = 150 0 Cj /TJ = 25°C
""
"";;-
~
~
10 f-rJ
6~
, \\ ~
z 10
""I- 86
eI)
!:
5 i1
"' ~ ~ - 4
2 I
0 ",,",J
o 120 140 160 180
'\ 1
o
I J
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Te. MAXIMUM CASE TEMPERATURE (OC) V.. INSTANTANEOUS FORWARO VOL TAGE (VOLTS)
lNl191thru lNl198
1N1195A thru 1N1198A
For Specifications, See IN248B Data.
1-29
lN1313 thru lN1327
Very low power zener diodes with standard ±10%

tolerances. Available with ±5.0% tolerance by adding
suffix "A" to type number.
Standard cathode-to-case polarity.
For new designs and for industry preferred replace-
CASE 53
ment devices, see MZ92-8.8A series.
MAXIMUM RATINGS
Junction and Storage Temperature Range: -65 to +175°C (Derate 1 mW/oC

above 25°C).
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Max Reverse Current Max Reverse Current

Nominal Test Nominal Tlst
Yoltaa:1 TA = 25"C TA = 100'C Voltall Voltage TA = 25"C TA = 100"C Voltage
Yz@IZT=20Q"A IR@VR IA@VR VR Vz@IZT= 2oo"A IR@VR IA@VR YR
Type yolts "A "A "Its Type "Its pA "A yolts
1N1313 8.75 0.5 5 6.8 1N1318 23.50 0.1 10 18
1N1314 10.50 0.5 5 8.2 1N1319 28.50 0.1 10 22
1N1315 12.75 0.5 5 10 ' 1N1320 34.50 0.1 10 27
1N1316 15.75 0.5 5 12 1N1321 41.00 0.1 10 33
1N1317 19.00 0.5 5 15 1N1322 48.50 0.1 10 39
Max Riversl Current

Nominal Test
Yoltall TA = 25'C TA = 100"C Volta,e
YZ@IZT= 200 pA I,@VR IA@VR YR
Type "Its "A pi YOIts
1N1323 58.00 0.1 10 47

1N1324 71.00 1.0 50 56
1N1325 87.50 1.0 50 68
1N1326 105.0 1.0 50 82
1N1327 127.5 1.0 50 100
lN1351 thru lN1375
CA5E56~
Recommended for applications requiring an exact re-
placement only. For new designs and for industry pre-
ferred replacement devices, see IN2970 series.
(00·4)
1-30
1 N1507 thru 1N1517
ferred replacement devices, see 1. O-watt, IN4728
series.
CASE 52
(00-13)
lN1518 thru lN1528

Recommended for applications reqUIrmg an exact
CASE 52
(00-13)
IN 1530, A
For Specifications, See IN429 Data.
lN1588 thru lN1598

CASE 56
(00-4)
lN1599 thru lN1609
CASES6~
Recommended for applications requiring an exact
(00-4)
1-31
HIGH VOLTAGE SILICON RECTIFIERS MOLDED ASSEMBLIES
lN1730 thru lN1734

lN2382 thru lN2385
Standard single - phase, half-wave, high -voltage

silicon rectifier assemblies.
CASE 41
MAXIMUM RATINGS (\!overing all devices. in the table below)
Max. DC Reverse Current

@ Rated Peak Reverse Voltage 25°C 10pA
100°C 100pA
Max. Surge Current 2.5A

(8 ms)
Operating Temperature _55°C to +150"C
Avg. Rectified Max. DC
Fwd. Fwd. Case Lead
Current.., mA Max.RMS Voltage Dimensions Dimensions
VRM
Rectifier Input @ 100mA
Types (rep) @25°C @100'C Voltage @ 25°C L Dia. L Dia.
1N1730 1000 200 100 700 5 .5 .375 1.250 .030

1Nl731 1500 200 100 1050 5 .5 .375 1.250 .030
IN1732 2000 200 100 1400 9 1.0 .375 1.250 .030
1Nl733 3000 150 75 2100 12 1.0 .375 1.250 .030
1Nl734 5000 100 50 3500 18 1.0 .5 1. 250 .030
1N2382 4000 150 75 2800 18 1.5 .5 1.250 .030
IN2383 6000 100 50 4200 27 1.5 .5 1.250 .030
1N2384 8000 70 35 5600 27 1.5 .5 1.250 .030
1N2385 10000 70 35 7000 39 2.0 .5 1.250 .030
IN 1735 thrulN1742 (REFERENCE DIODES)

IN 1736Athru lN1742A For Specifications, See IN429 Data.
IN 1765 thru IN 1802 (ZENER DIODES)

placement only'. For new designs and for industry pre-
fer·red replacement devices, see IN4728 series.
CASE 52
(00-13)
1-32
1N 1803 thru 1N 1836 (ZENER DIODES)
Recommended for applications requiring an exact replacement

only. For new designs and for industry preferred replacement de-
vices, see IN3993 series, and IN2970 series.
CAsE56\ 1N1816 thru 1N1836 are available as clipper devices.To

(00-4) order, add suffix "C" for ±10%, suffix "CA" for ±5%.
1N2008 thru 1N20 12 (ZENER DIODES)
~ placement only. For new designs and for industry pre-

CASE 56
(00-4)
~
lN2032 thru lN2040(ZENER DIODES)

placement only. For new designs and for industry
CASE 52
(00-13)
lN2041 thru lN2049(ZENER DIODES)

CASE 56
(00-4/
1-33
N2163 thru 1N2171 (SILICON)
1
lN2163A thru lN2171A

lN3580, A, Bthru lN3583, A, B
TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES TEMPERATURE-

COMPENSATED
SILICON ZENER
Highly reliable reference sources utilizing an oxide-passivated REFERENCE DIODES
junction for long-term voltage stability. Construction consists of
welded hermetically sealed metal and glass case.
• Low Dynamic Impedance

• Choice of Three Temperature Ranges
• "Box Method" Specifications Guarantee Maximum Voltage De-
viation.
Temperature compensated reference diodes are made by taking

advantage of the differing thermal characteristics of forward and
reverse biased silicon PN junctions. A forward biased junction has a
negative temperature coefficient of approximately 2.0 millivoltsfC.
~O'125MAXOIA
Reverse biased junctions above 5.0 volts have a positive temperature
coefficient and therefore it is possible by judicious selection of
combinations of forward and reverse biased junctions to obtain a
device that shows a very low temperature coefficient due to cancella-
tion. Because of the differing Impedance versus temperature charac-
teristics of the junctions involved, optimum temperature stability is
obtained by operating in the zener current range at which the tempera-
ture coefficient is a minimum. 1.25
MIN
MAXIMUM RATINGS
Junction Temperature: -56 to +200oC .
Storage Temperature: -66 to +2000 c
l:~~. 0.21 Q.350
.~~-- I
CASE: Hermetically sealed. welded metal glass
DIMENSIONS: Sao Outline drawing.
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
and weldable.
POLARITY: Cathode to case
-j
WEIGHT: 1.5 Grams (approx)
CASE 52
(00-13)
1-34
lN2163 thru lN2171, lN2163A thru lN2171A,
lN3580, A, B thru lN3583, A, B (continued)
Vz =9.4 Volts ± 0.4 v I± 0.2 V Suffix "A") @II ZT = 10 rnA)

NOTE 1:
Max
Voltage Variation (6.V Z ) and Temperature Coefficient.
Voltage Test Temperature Max Dynamic
Coefficient All reference diodes are characterized by the "box method". This
Change Temperature$' Impedance
Type INote 1) INote 1) (Note 21 guarantees a maximum voltage variation (6.V Z ) over the specified
°c %IOC
Number 6V Z IVolts) ZZT (Ohms) temperature range, at the specified test current (lZT)' verified by
tests at indicated temperature points within the range. Vz is
lN2163.A 0.033 0, +25, +70 0.005
measured and recorded at each temperature specified. The 6V Z
1N2164.A 0.086 -55, D, +25, 0.005
between the highest and lowest values must not exceed the
+75, +125 15
maximum 6V Z given.
lN2165.A 0.115 -55, D, +25, 0.005
+75, +125, +185 This method of indicating voltage stability is now used for JEDEC
lN2166.A 0.007 0, +25, +70 0.001 registration as well as for military qualification. The former method
lN2167.A 0.017 -55,0, +25, 0.001 of indicating voltage stability - by means of temperature co~
+75, +125 15 efficient - accurately reflects the voltage deviation at the tem~
lN2168.A 0.023 -55,0, +25, 0.001 perature extremes, but is not necessarily accurate within the
+75, +125, +185
temperature range because reference diodes have a nonlinear
lN2169.A 0.004 D, +25, +70 0.a005
temperature relationship. The temperature coefficient, therefore,
lN2170.A 0.009 -55,0, +25, 0.0005 is given only as a reference.
+75, +125 15
lN2171.A 0.012 -55,0, +25, 0.0005

+75, +125, +185
Vz '" 11.7 Volts ± 5.0% (lZT '" 7.5 mAl
Max
Voltage Test Temperature Max Dynamic NOTE 2:
Change Temperatures Coefficient Impedance
Type (Note 1) (Note 1) INote 21 The dynamic zener impedance, ZZT' is derived from the 60~Hz ac
Number 6V Z (Volts) °c %loC ZZT (Ohms) voltage drop which results when an ac current with an rms value
equal to 10% of the dc zener current, IZT' is superimposed on Izr
lN3580 0.088 0.01 A cathode~ray tube curve~trace test on a sample basis is used to en~
1N3581 0.044 0.005
0, +25, +75 25 sure that the zener has a sharp and stable knee region.
lN3582 0.018 0.002
lN3583 0.009 0.001
lN3580A 0.181 0.01

lN3581A 0.090 ·55,0, +25, 0.005 25
lN3582A 0.036 +75, +100 0.002
lN3583A 0.018 0.001
lN3580B 0.239 0.01

lN3581B 0.120 -55, 0, +25
0.005 25
1N3582B 0.048 0.002
+75, +100, +150
lN3583B 0.024 0.001
IN2382thru IN2385 For Specifications, See IN1730 Data.
IN2498 thru IN2500

CASE 56
(DO-4)
IN2609 thru IN2617

Obsolete, discontinued types, replace with devices from the IN4001 series.
1-35
lN2620, A, B(SILICON)
thru
lN2624, A, B
stability. Construction consists of welded hermetically
sealed metal and glass case.
MAXIMUM RATINGS
CASE 52
Junction Temperature: -55 to+1750C (00-13)
Storage Temperature: -65 to +175 0C
DC Power Dissipation: 750 mW @ T A = 250C
MECHAN ICAL CHARACTE R ISTICS
CASE: Hermetically sealed, welded metal and glass
FI N ISH: All external surfaces are corrosion resistant and leads are readily sold·
POLARITY: Cathode to case
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Maximum Maximum
Ambient Dynamic
Voltage Temperature
Test
Change Impedance
Tem~rature Coefficient
AV Z (Volts) °c ZZT (Ohms)
JEDEC %rC
Type No. (Note 1) ±loC (Note 1) (Note 2)
Vz = 9.3 V ±5.0%* @ IZT = 10 rnA
1N2620 0.070 0.01

1N2621 0.035 0.005
1N2622 0.014 0, +25, +75 0.002 15
1N2623 0.007 0.001
1N2624 0.003 0.0005
1N2620A 0.144 0.01

1N2621A 0.072 0.005
-55, 0, +25,
1N2622A 0.029 0.002 15
+75, +100
1N2623A 0.014 0.001
1N2624A 0.007 0.0005
1N2620B 0.191 0.01

1N2621B 0.095 0.005
-55, 0, +25,
1N2622B 0.038 0.002 15
+75, +100, +150
1N2623B 0.019 0.001
1N2624B 0.010 0.0005
*Tighter·tolerance units available on special request.

CAPACITANCE (C) = 75 to 200 pF @ 90% of Vz
FORWARD BREAKDOWN VOLTAGE (Vf) = 100 to 800 V
1-36

(With IZT = 10m A ±O.01 mAl (See Note 3)
1N2620 thru 1N2624

FIGURE 1a FIGURE 1b
75,-----,-----,-----,-----,-----,-----,
lN2620
:>
.5
~ 25F-==i"-----::*"''----+-----+------+---+-H
:z
~C3
..,g,
wo
",-
~~
o~
0
>..!!
..
"'~
::>-
x
:li -25
N
~
-50 f-----+------f-".---+-----+------+-----H
-75l--.J:---J:--+=~~:=j=~
o 25 50 75
TA. AMBIENT TEMPERATURE (DC)

(With IZT = 10 mA ±O.Ol mAl (See Note 3)
FIGURE 2a FIGURE 2b
150
lN2620A
o lN26Z0A/ /
0 / /lN2621A
100
/ I
0 / I lN2622A
:> / / ~
.5 0 / / ./
w
'"z 50 /1 ,/
// lN2623A
~G
//.-- .-
"'0
0
lN2624A
~~
« 0
0 ~
1--
-'~ 0
:----... :--....;:: r-.....
.
o~
>~
::>";;
~
-1 0 \"\. ....... ............ lN2624A
"''''
x- \'\
« -50
'"N -20 \ "\. f'....
...........
" lN2623A
-100
-30
\
\ \.
\ \.
" lN2622A
lN2620A
-40
-50 lN262DA
\ \.
, '\ lN2621A
1\
-150
-55 50 100 -55 50 100
TA. AMBIENT TEMPERATURE (DC)
1-37
1 N2620, A, B thru 1 N2624, A, B (continued)

(with IZT = 10 mA ±O.Ol rnA) (See Note 4)
1N2620B thru 1N2624B

FIGURE 3a FIGURE 3b
a 1N2620B I /
a I / lN2621B
I II lN2622B
a I /'"
-
I / ./ I
a I I ./ -----Ji
1/ / --.... lN2623B
// V i I
--
a
I//"'_ ~
--..:::::
-...... ....... 1N2624B
a Ii"""""
-.:.... I ............. ,lN2624BL-
-1 a \"\. ............ ~
~-"'-.
"",l'\. __
......... ! .." "
\ '\ ~ 1N2623B
O~~
-2
~ ~-
'\
-1501-----t---j---t-"..--+---+--H
-3
-4 a
a \
\
\
\
"" lN2622B
lN2621B
_200L_ _J __-1,-__l-__:i===1:::NS26:=2:::0B=:::::.J -5 a lN2620B \
-55 50 100 150 -55 50 100 150
TA, AMBIENT TEMPERATURE (DC)

VOL TAGE CHANGE (at specified temperatures) versus ZENER CURRENT
MORE THAN 95% OF THE UNITS ARE IN THE RANGES INOICATED BY THE CURVES
200
"',.S'" I I
11 100
~
;;j'
.5
>--
~
'"
10
___i I_~T_
w
~
«
~
~ 4
80
60
a
"~
="- "" i"-..
............ ""-
-
......... I
'"
G -:::::: ~ ......1100 0 C
I '"w -55 0 C,/'
t:: "- I
~ 9.0
~
N
~
~
,.
N
::>
'"~
20
""
I
I ,~ ~25;C
I
1a
"" '"
B.O
a -
~ ~: aa ......... ............
1---............
r-..r-..
7.0 5.
-75 1.0 2.0 4.0 6.0 8.0 10 20
AVZ, MAXIMUM VOLTAGE CHANGE (mV) IZ, ZENER CURRENT {mAl
(Referenced to IZT = 10 mAl
1-38
~
>
.3
B-
0
IZT= lJ rnA
Bandwidth = 500 Hz
/
./' - - - r--
--- i
ro-
/
--
w
'"0z 6 1---
'"
=>
I r--
'"x.
2 -
I r- I-r--
B. 0
'"
4. o /
0/
10 20 30 40 50 100 200 400 1000
fe, CENTER FREaUENCY 1kHz)
NOTE 1: for each series are given in Figure 5. A cathode-ray tube curve--trace
Voltage Variation (" VZ) and Temperature Coefficient. test on a sample basis is used to ensure that each zener characteristic
All reference diodes are characterized by the "box method". This
guarantees a maximum voltage variation (6VZ) over the specified NOTE 3:
temperature range, at the specified test current (1 ZT), verified by These graphs can be used to determine the maximum voltage change
tests at indicated temperature points with in the range. Th is method of any device in the series over any specific temperature range. For
of indicating voltage stability is now used for JEDEC registration as example, a temperature change from +25 to +500 C will cause a volt-
well as for military qualification. The former method of indicating age change no greater than +23 mV or -23 mV for 1N2620, as
voltage stability - by means of temperature coefficient - accurately illustrated by the dashed lines in Figure 1. The boundaries given are
reflects the voltage deviation at the temperature extremes. but is not maximum values. For greater resolution, expanded views of the
necessarily accurate within the temperature range because reference shaded areas in Figures 1a. 2a. and 3a are shown in Figures 1b. 2b.
diodes have a nonlinear temperature relationship. The temperature and 3b respectively.
coefficient, therefore. is given only as a reference.
NOTE 4:
The maximum voltage change, 6VZ, in Figure 4 is due entirely to the
NOTE 2:
impedance of the device. If both temperature and IZT are varied,
Zener I mpedance Derivation then the total voltage change may be obtained by edding "VZ in Fig-
The dynamic zener im pedance, ZZT, is derived from the 6CH-1z ac ure 4 to the 6VZ in Figure 1,2, or 3 for the device underconsidera-
voltage drop which results when an ac current with an rms value tion. If the device is to be operated at some stable current other
equal to 10% of the dc zener current, IZT, is superimposed on IZT. than the specified test current, a new set of characteristics may be
Curves showing the variation of zener impedance with zener current plotted by superimposing the data in Figure 4 on Figure 1,2, or 3.
1-39
lN2804 thru lN2846 (ZENER DIODES)
CAS~
6.8V thru 200V (Case 54)
lN4557 thru lN4564 lN4549 thru lN4556

3.9Vthru 7.SV (Case 54) 3.9V thru 7.SV (Case 58) (TO-3 Modified)
1N3305 thru 1 N3350

6.8V thru 200V (Case 58)
Units are available with anode-to-case and cathode- CASE 58
to-case connections (standard and reverse polarity). (stud package)
For reverse polarity, add suffix "R" to type number.
MAXIMUM RATINGS
Junction and Storage Temperature: _65°C to +175°C.
D C Power Dissipation: 50 Watts. (Derate 0.5 W/oCabove 75°C).
TOLERANCE DESIGNATION
The type numbers shown have a standard tolerance of ±20% on the nominal
zener voltage. Add suffix" A" for ±10% units or "B" for ±5% units. (2% and 1%
tolerance also available. (See Selector Guide for details)
CASE 54 APPLICATIONS INFORMATION
If these units are used with a socket, the unregulated line should be connected
to one pin through a suitable current limiting resistor and the load should be
connected to the other pin. The load will now be disconnected from the line if
the unit is removed from the socket.
Typical circuit connections for anode-to-case and cathode-to-case polarities
(standard and reverse polarities, respectively) are shown be low
CIRCUIT CONNECTIONS
STANDARD POLARITY
(ANOOE TO CASE I
REVERSE POLARITY
(CATHOOE TO CASE I
(":'~~~FOF~)(O~NCATS;PEA~~ )
51~olts
(A) NOMINAL ZENER VOLTAGES BETW.EEN THE
VOLTAGES SHOWN AND TIGHTER VOLTAGE
TOLERANCES: n!ice JM JS ZetJ5lB oiall
To desi.gnate units with zener voltages other than Description (each device>. Diodes Tolerance
those assigned JEDEC numbers and/or tight voltage
tolerances (±.3%. ±'2%. ±.l %). the Motorola· type
Motorola Stud
Tolerance
(Ii%\
number should be used. per device (±5%) Code·
.Code: (omit for ±20% ~nits) (A-Not used)
50 M 90 S Z 3
B - Two devices in series
Drce Molola NoJinaI
Description
T Ze~r
Torance
Voltage I Stud Diode (±%)
C - Three devices in series
D - Four devices in series
Example: 50M51SZ5Bl
Example: 50M90ZS3 (e) ZENER CLIPPERS: (Standard Tolerance ±I 0% and
±5%).
(B) MATCHED SETS: (Standard Tolerancesare±5.0%. Special clipper diodes with opposing Zener
±2.0%. ±1.0%). junctions buUt into the device are available by using
1
Zener diodes can be obtained in sets consisting the following. nomenclature:
of two or more matched devices. The method for
specifying such matched sets is similar to the one
described in (A) for specifying units with a special 10
voltage and/or tolerance except that two extra DeJ JM No!taIJS ler JZ
sufrtxes are added to the code number described. Description Voltage Diodes
These units are marked with code letters to Motorola Stud Clipper
identify the matched sets and, in addition, each unit Tolerance for each of
in a set is marked with the same serial number. the two Zener voltages
which is different for each set being ordered. (not a matching require-
Example: 50M20SZZ10 ment)
1-40
(re =30'C unless otherwise specified) VF = 1.5 V max @ 10 A on all types.
Nominal
Test
Max Zener Impedance Max DC Zener amlSE • Typical
Zener
Zener Voltage Current LEAlME CUIIENt
SO Wan Current Voltage
SO Wan @I 7S'C Case Temp Temp. CoeH.
(Vz) V~ts (lZT)
CASE 54 CASE 58 mA =
ZZT @IZT ZZK @ IZK SmA (lZM)mA I. MAX V. I VR2 %/'C
ohms ohms (~A)
IN4557 IN4549 3.9 3200 0.16 400 11900 150 0.5 0.5 -.025
IN4558 IN4550 4.3 2900 0.16 500 10650 150 0.5 0.5 -.025
IN4559 IN4551 4.7 2650 0.12 600 9700 100 1.0 1.0 .010
IN4560 IN4552 5.1 2450 0.12 650 8900 20 1.0 1.0 .015
IN4561 IN4553 5.6 2250 0.12 900 6100 20 1.0 1.0 .030
IN4562 IN4554 6.2 2000 0.14 1000 7300 20 2.0 2.0 .040
IN2804 IN3305 6.8 1850 0.2 70 6600 150 4.5 4.3 .040
IN4563 IN4555 6:8 1850 0.16 200 6650 10 2.0 2.0 .045
IN2805 IN3306 7.5 1700 0.3 70 5900 75 5.0 4.7 .045
IN4564 IN4556 7.5 1650 0.24 100 6050 10 3.0 3.0 .053
IN2806 IN3307 8.2 1500 0.4 70 5200 50 5.4 5.2 .048
IN2807 IN3308 9.1 1370 0.5 70 4800 25 6.1 5.7 .051
IN2808 IN3309 10 1200 0.6 80 4300 10 6.7 6.3 .055

IN2809 IN3310 11 1100 0.6 60 3900 5 6.4 8.0 .060
IN2810 IN3311 12 1000 1.0 80 3600 5 9.1 8.6 .065
IN2811 IN3312 13 960 1.1 80 3300 5 9.9 9.4 .065
IN2812 IN3313 14 890 1.2 80 3000 5 10.6 10.1 .070
IN2813 IN3314 15 830 1.4 80 2800 5 11.4 10.8 .070
IN2814 IN3315 16 780 1.6 80 2650 5 12.2 11.5 .070

IN2815 IN3316 17 740 1.8 80 2500 5 13.0 12.2 .075
IN2816 IN3317 18 700 2.0 80 2300 5 13.7 13.0 .075
IN2817 IN3318 19 660 2.2 80 2200 5 14.4 13.7 .075
IN2818 IN3319 20 630 2.4 80 2100 5 15.2 14.4 .075
IN2819 IN3320 22 570 2.5 80 1900 5 16.7 15.8 .080
IN2820 IN3321 24 520 2.6 80 1750 5 18.2 17.3 .080

IN2821 IN3322 25 500 2.7 90 1550 5 19.0 18.0 .080
IN2822 IN3323 27 460 2.8 90 1500 5 20.6 19.4 .085
IN2823 IN3324 30 420 3.0 90 1400 5 22.8 21.6 .085
IN2824 IN3325 33 380 3.2 90 1300 5 25.1 23.8 .085
IN2825 IN3326 36 350 3.5 90 1150 5 27.4 25.9 .085
IN2826 IN3327 39 320 4.0 90 1050 5 29.7 28.1 .090

IN2827 IN3328 43 290 4.5 90 975 5 32.7 31.0 .090
IN2828 IN3329 45 280 4.5 100 930 5 34.2 32.4 .090
IN2829 IN3330 47 270 5.0 100 880 5 35.8 33.8 .090
IN2830 IN3331 50 250 5.0 100 830 5 38.0 36.0 .090
lN2831 IN3332 51 245 5.2 100 810 5 38.6 36.7 .090
-
IN2832
IN3333
IN3334
52
56
240
220
5.5
6
100
110
790
740
5
5
39.5
42.6
37.4
40.3
.090
.090
IN2833 IN3335 62 200 7 120 660 5 47.1 44.6 .090
IN2834 IN3336 68 180 8 140 600 5 51.7 49.0 .090
IN2835 IN3337 75 170 9 150 540 5 56.0 54.0 .090
IN2836 IN3338 82 ISO 11 160 490 5 62.2 59.0 .090
IN2837 IN3339 91 140 15 160 420 5 69.2 65.5 .090

IN2638 IN3340 100 120 20 200 400 5 76.0 72.0 .090
IN2839 IN3341 105 120 25 210 380 5 79.6 75.6 .095
IN2640 IN3342 110 110 30 220 365 5 63.6 79.2 .095
IN2641 IN3343 120 100 40 240 335 5 91.2 86.4 .095
IN2842 IN3344 130 95 50 275 310 5 98.6 93.6 .095
-
IN2643
IN3345
IN3346
140
150
90
65
60
75
325
400
290
270
5
5
106.4
114.0
100.6
108.0
.095
.095
IN2644 IN3347 160 80 80 450 250 5 121.6 115.2 .095
-
IN2645
IN3348
IN3349
175
180
70
68
85
90
500
525
230
220
5
5
133.0
136.8
126.0
129.6
.095
.095
IN2846 IN3350 200 65 100 600 200 5 152.0 144.0 .100
SPECIAL SELECTIONS AVAI LABLE INCLUDE: (See Selector Guide for details)
*VR1 - Test Voltage for 5% Tolerance Device

VR2 - Test Voltage for 10% Tolerance Device
No Leakage Specified as 20% Tolerance Device
1-41
FIGURE 1- TEMPERATURE CHARACTERISTICS

30
1 ./
,
10
~ :: II In
~
~
!Ii
5
3.0
1.0
...,.V -
~ 0.3
6 V IS THE TYPICAL VOLTAGE CHANGE OBSERVED OVER THE TEMPERATURE RANGE
~
. 1/
FROM +25 TO + 125'C. 6 V IS POSITIVE ABOVE 5 VOLTS, NEGATIVE BELOW 4.3
0.\ VOLTS. BETWEEN 4.3 ANO 5.0V, 6 V VARIES APPROXIMATELY +O.OBV.
0.03
1.0 2.0 5.0 10 20 50 100 200 500 1000
VI, BREAKDOWN VOLTAGE IVOLTSI
FIGURE 2-
POWER·TEMPERATURE DERATING CURVE FIGURE 3 - LEAKAGE CURRENT
50 100
TYPICALLY, BO% OF THE DEVICES FALL WITHIN THE INDICATED RANGE.
I " (\) Below 5.BV
50
Vi lilll
SEE SPEC FORV,
'"
1=
10
~ 121 Above 5.BV
z 40 ~ V, O.8V (VZINOMINAL) VjTOLUANCfl)
~
ill
Q 30 ~
'\
! 1.0 "- ./
~
111
i 20
I\.
121
~ ~
0.1
.? 10 "'r-...
o
o 25 50 75 100 125 150
"\ 175
0.01
10 100
I
1000
Te, CASE TEMPERATURE I'CI VI, NOMINAL BREAKDOWN VOLTAGE IVDLTSI
FIGURE 4 - ZENER IMPEDANCE

versus ZENER CURRENT
100
f"".,.
,.
Vi 10
§
111
~
'!
1.0 r-.
30V
IV
ffi
~
.:t 0.1 I'. II
TEST FREQUENCY 50 Hz :S.lV
AClrmsl CURRENT . 10% of I,
0.01 1 11111111 1 1 I I II III II
I 10 100 1000 10,000
II, ZENER CURRENT ImAI
1-42
lN2970 thru lN3015 (ZENER DIODES)
Diffused-junction zener diodes for both military and
CASES~
high-reliability industrial applications. Available with
anode-to-case and cathode-to-case connections (stand-
ard and reverse polarity), i. e., 1N2970 and 1N2970R.
Supplied with mounting hardware.
(00-4)
The type numbers shown have a standard tolerance of ±20% on the nominal
zener voltage. Add suffix "A" for ±10% units or "B" for ±5% units. (2% and 1%
tolerance also available.)
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C.
D C Power Dissipation: 10 Watts. (Derate 83.3 mW;oC above 55°C).
(TC ~ 25 0 C unless otherwise noted) VF = 1.5 V max @ IF = 2 amp on all types.
Nominal Test Max Zener Impedance Mar DC Zener Mar. Reverse Current •
Type No. Zener Voltage Current Current
V, (@ Izr Izr Zzr @ Izr Z" @ I" IlK I'M mA I.Mu V" V"
Volts mA Ohms Ohms mA (I'A)
IN2970 6.8 370 1.2 500 1.0 1,320 150 5.2 4.9
IN2971 7.5 335 1.3 250 1.0 1,180 75 5.7 5.4
IN2972 8.2 305 1.5 250 1.0 1,040 50 6.2 5.9
IN2973 9.1 275 2.0 250 1.0 960 25 6.9 6.6
IN2974 10 250 3 250 1.0 860 10 7.6 7.2
IN2975 II 230 3 250 1.0 780 5 8.4 8.0

IN2976 12 210 3 250 1.0 720 5 9.1 8.6
IN2977 13 190 3 250 1.0 660 5 9.9 9.4
IN2978 14 180 3 250 1.0 600 5 10.6 10.1
IN2979 15 170 3 250 1.0 560 5 11.4 10.8
IN2980 16 155 4 250 1.0 530 5 12.2 11.5

IN2982 18 140 4 250 1.0 460 5 13.7 13.0
IN2983 19 130 4 250 1.0 440 5 14.4 13.7
IN2984 20 125 4 250 1.0 420 5 15.2 14.4
IN2985 22 115 5 250 1.0 380 5 16.7 15.8
IN2986 24 105 5 250 1.0 350 5 18.2 17.3

IN2988 27 95 7 250 1.0 300 5 20.6 19.4
IN2989 30 85 8 300 1.0 280 5 22.8 21.6
IN2990 33 75 9 300 1.0 260 5 25.1 23.8
IN2991 36 70 10 300 1.0 230 5 27.4 25.9
"VR1 - Test Voltage for 5% Tolerance Device. VR2 - Test Voltage for 10% Tolerance
Device. No Leakage Specified as 20% Tolerance Device.
(A) NOMINAL ZENER VOLTAGES BETWEEN THE

TOLERANCES:
To designate units with zener voltages other than
those assigned JEDEC numbers and/or light voltage
tolerances (±3%. ±2%. ±I %). the Motorola type
number should be used.
10 M 90 Z 3
D!ce JM
.Code:
51~OltS
Description (each device) Diodes
Motorola
erJ
Tolerance
per device (±5%)
z±
5 B Orall
Tolerance
of set
(±1 %)
Code"
(omit for ±20% units) (A'Not used)
1
T T
Device Motorola Nominal
T T
Zener Tolerance
T B - Two devices in series
C - Three devices in series
Description Voltage Diode (±%) D - Four devices in series
Example: 10M5l5Bl
Example: 10M90Z3
(C) ZENER CLIPPERS: (Standard Tolerance ±IO% and
±S%).
(B) MATCHED SETS: (Standard Tolerances are ±5 .0%. Special clipper diodes with opposing Zener
±2.0%. ±1.0%). junctions built into the device are available by using
Zener diodes can be obtained in sets consisting the following nomenclature:
of two or more matched devices. The method for
~f'
1
Z Z
T
specifying such matched sets is similar to the one 10
d~,J
described in (A) for specifying units with a special JM
voltage and/or tolerance except that two extra Device Nominal
suffixes are added to the code number described. Description Voltage
These units are marked with code letters to Motorola Clipper
in a set is marked with the same serial number. the two Zener voltages
Example: 10M20ZZlO ment)
1-43
(TC ~ 25 0 C unless otherwise noted) VF = 1.5 V max @ IF = 2 amp on all types.
Nominal Test Max Zener Impedance Max DC Zener Max. Reverse Current •
Type No. Zener Voltage Current Current
V, (@ In hT Zn @ In ZlK @ I" IlK 1,... mA I, Max V" V"
Volts mA Ohms Ohms mA (/LA)
1N2992 39 65 11 300 1.0 210 5 29.7 28.1
1N2993 43 60 12 400 1.0 195 5 32.7 31.0
1N2995 47 55 14 400 1.0 175 5 35.8 33.8
1N2996 50 50 15 500 1.0 165 5 38.0 36.0
1N2997 51 50 15 500 1.0 163 5 38.8 36.7
1N2998 52 50 15 500 1.0 160 5 39.5 37.4

1N2999 56 45 16 500 1.0 150 5 42.6 40.3
1N3000 62 40 17 600 1.0 130 5 47.1 44.6
1N3001 68 37 18 600 1.0 120 5 5 I. 7 49.0
1N3002 75 33 22 600 1.0 110 5 56.0 54.0
1N3003 82 30 25 700 1.0 100 5 62.2 59.0

1N3Q04 91 28 35 800 1.0 85 5 69,2 65.5
1N3005 100 25 40 900 1.0 80 5 76.0 72.0
1N3006 105 25 45 1,000 1.0 75 5 79.8 75.6
1N3007 110 23 55 1,100 1.0 72 5 83.6 79.2
lN3008 120 20 75 1,200 1.0 67 5 91.2 S().4

lN3009 130 19 100 1,300 1.0 62 5 ~.8 93.fl
lN3010 140 18 125 1,400 1.0 58 5 106.4 100.8
lN3011 150 17 175 1,500 1.0 54 5 114.0 108.0
lN3012 160 16 200 1,600 1.0 50 5 121.G 115.2
lN3014 180 14 260 1,850 1.0 45 5 131).8 129.6

lN3015 200 12 300 2,000 1.0 40 5 152.0 144.0
SPECIAL SELECTIONS AVAILABLE INCLUDE: (See Selector Guide for details)
*V R1. - Test Voltage for 5% Tolerance Device. VR2 - Test Voltage for 10% Tolerance
DeVlce. No Leakage Speclfled as 20% Tolerance Device.
lN3016 thru lN30S1

1-44
1N3154, A(SILICON)
thru
lN3157, A

CASE 51
(00-7)
MAXIMUM RATINGS
Junction Temperature: -55 to +175 0 C
FIN ISH: All external surfaces are corrosion resistant and leads are readily sold-

WEIGHT: 0.2 Gram(approx)
ELECTRICAL CHARACTERISTICS (T A = 2S·C unless otherwise noted)
Maximunl Maxi nlU 111

Ambient
Voltage Dynamic
Test Temperature
Change Temperature Impedance
JEDEC Coefficient
t!i.V Z (Volts) °c ZZT (Ohms)
Type No.
±loC
'brc
(Note 1) (Note 2) (Note 2) (Note 3)
V Z ; 8.4 V ±5.0(:1* @ IZT ; 10 mA
1N3154 0.130 0.01

1N3155 0.065 0.005
-55, 0, +25, +75, +100 -~
15
1N3156 O. 026 O. 002
--
1N3157 O. 013 0.001
1N3154A 0.172 0.01

1N3155A 0.086 -55, 0, +25, +75, 0.005
15
1N3156A O. 034 +100, +150 0.002
--
1N3157A 0.017 0.001
CAPACITANCE (C); 20 to 180 pF @ 90';0 of V z

FORWARD BREAKDOWN VOLTAGE (V f ) ; 100 to 800 V
1N3154, A thru 1N3157, A (continued)

(with IZT = 10 mA 1-0.01 mAl (See Note 4)
1N3154 thru 1N3157

FIGURE 1a FIGURE 1b
150 50 I lN3154 " lN3155
~
40 I ---_. --
100
30
--/- - .--- ... _--- .. _... _-
:; / lN3156
S
w 20 L / ~
'"z 50 / / / - - C--'
~ 01.1 L .....-:. lN3157
.'"
w
~ O~
1 / / ...... f-
0
> -r--
I~""""'"
'"=> ~ ........
r--.. --I"'---.
.'x" -50
-1
O-"'~
\ '\
::---"
.:-........
~ lN3157
'>N" -2 0
-'"\ ~
<
-100
-30
\
'\
"-
-
" 1N3156
-4 0 \ ----"-
-5 0
1------
t'\.~;m54- ~1N3155
-55 50 100
TA, AMBIENT TEMPERATU RE (DC)

(With IZT - 10 mA i:D.Ol mAl (See Note 4)
FIGURE 2a 1N3154Athru 1N3157A

FIGURE 2b
200
I lN3154A
o _1 lN3154A,l lN3155A
IZT= 10 lA t---j
/'" o /
L --~---
_._,--- 1-----
150 -- I
/V I I .,. r - lN3156A
-- }
30
lN3155A
1.. V
j / /'
/ ....-- 20 ._- j------- .
II /'
--
1/ ~ lN3157A
k -::::::
lN3156A 0
----
:
lN31fA
/~
~
~ ~ ......... •
lN3157A
0
-1 0
~
L-.. .............. c::--." -,_.-
1N3156A
0 ..... \"- b", .~
~
lN3157A
~ i -2 0 \ \ ..........
-10 0 "'- lN3155A_ \ '\.
\ '\. '"
-15 0
"" ~.
""-
-3 0
-40 - -
\ '\.
\
i"-
-- -~
"" lN3156A
- - ._-
lN31 54A
1
-5 0 \lN3154A \ lN3155A
-20 0
-55 50 100 150, -55 50 100 150
TA, AMBIENT TEMPERATU RE (DC)
1-46
lN3154, A thru lN3157, A (continued)

VOLTAGE CHANGE (at specified temperatures) versus ZENER CURRENT
12 MORE THAN 95% OF THE UNI~ ARE IN THE ~NGES INDICATED BY THE CURVES ~iJO MORE THAN 95°" OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES
-55°C :~= -
+251oC +100oC
Ui
~ 50 !S --s; - r-- -
11 e
~ +150 0 C
w
u --:--.... c--... r---- -- .-
5 IZT
z
« ~ -....., r"-.!f- 100°C
~- .- ..- - ._- - ,-
~
~
~
10 ~
;;; -55°C > F:: t::t:::
['
25°C
~
=>
u
~ 9.0 ~
10
-- --t:-- = =: ==
~ ~ 5.0 _.
N
B 8.0 '"x
«
t----- r------
1--
'"N
N
7·~7·':-5-~"-"':'::1..-L----;:!o-----:'----2::':5:------::-!50 1.0
1.0 5.0 10 20 30 40
,VZ, MAXIMUM VOLTAGE CHANGE (mV) IZ, ZENER CURRENT (rnA)
(Referenced to IZT ~ 10 rnA)
FIGURE 5- DISTRIBUTION OF MAXIMUM GENERATED NOISE

4. , - ---,-,--
0=+1 -
IZT=10ml
3. oI---- BAN OWl OTH = 500 Hz
§
> (
......
.3
w
~
0
z 2. 0 V -
'"
=>
'"x
/
« V
1.u
'"
/ 1
10
-----1 20 30 40 50 100 200 400 1000
fe, CENTER fREQUENCY (kHz)
NOTE 1: Curves showing the variation of zener impedance with zener current
Types lN3154 thru lN3157 are available to MIL-S-19500/158 for each series are given in Figure 4. A cathode-ray tube curve-trace
test on a sample basis is used to ensure that each zener characteristic
NOTE 2:
NOTE 4:
Voltage Variation (.~ VZ) and Temperature Coefficient.
All reference diodes are characterized by the "box method", This
These graphs can be used to determine the maximum voltage change
guarantees a maximum voltage variation (1':. VZ) over the specified of any device in the series over any specific temperature range. For
temperature range, at the specified test current (lZT), verified by example, a temperature change from 0 to +500 C will cause a volt-
tests at indicated temperature points within the range. This method age change no greater than +42 mV or -42 mV for lN3154, as
of indicating voltage stability is now used for JEDEC registration as illustrated by the dashed lines in Figure 1. The boundaries given are
well as for military qualification. The former method of indicating maximum values. For greater resolution,. expanded views of the
voltage stability - by means of temperature coefficient - accurately shaded areas in Figures 1a and 2a are shown in Figures 1b and 2b
respectivel y.
necessarily accurate within the temperature range because reference NOTE 5:
diodes have a nonlinear temperature relationship. The temperature The maximum voltage change, 6. VZ, in Figure 3 is due entirely to
coefficient, therefore, is given only as a reference. the impedance of the device. If both temperature and IZT are varied,
NOTE 3: then the total voltage change may be obtained by adding 6. Vz in
Figure 3 to the 6.VZ in Figure 1 or 2 for the device Ulider considera-
Zener Impedance Derivation.o
tion. If the device is to be operated at some stable current other
The dynamic zener impedance, ZZT. is derived from the 60-Hz ac than the specified test current, a new set of characteristics may be
voltage drop which results when an ae current with an rms value plotted by superimposing the data in Figure 3 on Figure 1 or 2.
equal to 10% of the dc zener current. IZT, is superimposed on 'ZT.
1-47
lN3189 thru lN3191
Obsolete, discontinued types, replace with devices from the IN4001 series.
1 N3208thru 1N3212 (SILICON)
Medium-current silicon rectifiers. Cathode con-

nected to case, but reverse polarity (anode-to-case
connection) also available by adding suffix "R" to type
number, e. g. IN3208R. Supplied with mounting hard-
CASE 42
ware.
(00-5)
MAXIMUM RATINGS
Rating Symbol 1N3208 1N3209 lN3210 1N3211 lN3212 Unit

lN3208R IN3209R lN3210R lN3211R lN3212R
D C Blocking Voltage VR 50 100 200 300 400 Volts
RMS Reverse Voltage V 35 70 140 210 280 Volts

r
Average Half-Wave Rectified

Forward Current With Re- I0 * 15 15 15 15 15 Amp
sistive Load
Peak One Cycle Surge Current IFM(surge)

(60 cps & 25°C Case Temp) 250 250 250 250 250 Amp
Operating Junction Tempera- TJ -65 to + 175 °c

ture
Storage Temperature Tstg -65 to + 175 °c
ELECTRICAL CHARACTERISTICS (All Types) at 25"C Case Temp.
Characteristic Symbol Value Unit
Maximum Forward Voltage at 40 Amp D-C Forward VF 1.5 Volts

Current
Maximum Reverse Current at Rated D-C Reverse IR 1.0 mAdc

Voltage
Typical Thermal Resistance, Junction To Case IIJC 1.7 C!W
1-48
lN3213,lN3214
For Specifications, See IN248B Data.
1 N3282thru 1N3286 (SILICON)
Low-current silicon rectifiers for applications re-

quiring extremely high reverse - voltage capability.
Hermetically sealed, subminiature glass package,
CASE 51 offering excellent stability and reliability under envi-
(00-7) ronmental extremes.
MAXI MUM RATI NGS (At 60 cps Sinusoidal Input, Resistive or Inductive Load)
Rating Symbol 1N3282 1N3283 1N3284 1N3285 1N3286 Unit

Peak Repetitive Reverse VRM(rep) 1000 1500 2000 2500 3000 Volts
Voltage
RMS Reverse Voltage V 700 1050 1400 1750 2100 Volts

r
Average Half-Wave Rectified
Forward Current
(25· C Ambient) 10 100 100 100 100 100 mA
(100· C Ambient) 50 50 50 50 50 mA
Peak Surge Current IFM(surge) 2.5 2.5 2.5 2.5 2.5 Amp
(1/2-cycle, 60 Hz)
Peak Repetitive Forward IFM(rep) 0.50 0.50 0.50 0.50 0.50 Amp
Current
Operating and Storage TJ , Tstg -65 to + 150 ·C

Temperature Range
Characteristic Symbol Value Unit

Maximum Forward Voltage Drop @ 100 mA, VF 2.5 Volts
Continuous DC (25·C)
Maximum Full-Cycle Average Forward Voltage VF(AV) 1.2 Volts

Drop @ Rated Current (100·C)
Maximum Reverse Current@ Rated DC Voltage

(25· C) 1.0 p.A
Ia
(100·C) 10.0
Maximum Full-Cycle Average Reverse Current

@ Max Rated PIV and Current (as Half-Wave IR(AV) 10.0 p.A
Rectifier, Resistive Load, iOO·C)
Typical Thermal ReSistance, Junction to Ambient 6JA 400 ·C/W
1-49
1 N32 82 thru 1N3286 (continued)
TYPICAL FORWARD CHARACTERISTICS MAXIMUM ALLOWABLE DC OUTPUT
(FOR ALL TYPES) (SINGLE.PHASE RESISTIVE OR INDUCTIVE LOADi
100 100
~
90
S
:I
:3
80
70
_50°
1-...... ..ill
~
~
:3
80
"\. ~
j! 60 25°C 60
i
ia ...
S \
~
50
100°C 1- ::>
u
m 40 Ii! 40
I... 39 I... \
~ 20
20
10
j \
o
V./ / o
\
o 0.5 1.0 1.5 2.0 2.5 3.0 3.5 o 25 50 75 100 125 150 175 200
Y•• FORWARD VOLTAGE DROP (VOLTS) T•• AMBIENT TEMPERATURE (OC)
1 N3305 thru 1N3350

For Specifications, see IN2804 Data.
1-50
lN3491 thru lN3495 (SILICON)
(MR322 thru MR328)
MR330, MR331
Medium-current silicon rectifiers - compact, highly

CASE 43 efficient silicon rectifiers for medium-current appli-
(00.21)
cations.
MAXIMUM RATINGS
~<'O ..,~ ~ .... .... .., .....<'0 ..,co<'0 0..,.., c;;..,
0-<'0 0-<'0 0-<'0 0-<'0 0-<'0 ..,
<'0..,
Rating Symbol ..,,,,,

~..,
..,,,,, ..,,,,, ..,""
~.., ~.., ~..,
~.., Unit
~:IE ~:IE ~:IE ~:IE ~;: "" :IE :IE "" :IE"" :IE""
Peak Repetitive Reverse Voltage VRM(rep)
Working Peak Reverse Voltage VRM(wkg) 50 100 200 300 400 500 600 800 1000 Volts
Non-Repetitive Peak Reverse Voltage

(halfwave, slngle phase, VRM(non.rep) 100 200 300 400 500 600 720 1000 1200 Volts
60 cycle peak)
RMS Reverse Voltage Vr 35 70 140 210 280 350 420 560 700 Volts
Average Rectified Forward Current

(single phase, resistive load, 10 25 Amp
60 Hz , see Figure 3) TC = 130 0 C
Non-Repetitive Peak Surge Current

(surge applied at rated load IFM(surge) 300 (for 1/2 cycle) Amp
conditions, see Fi,gure 5)
r2t
Rating (non-repetitive, for t
greater than 1 ma and less 12t 375 A(rms)2sec
than B.3 mB)
Operating and Storage JWlction ·65 to +175 °c

Temperature Range TJ' Tstg
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case 9JC 1.2 °C/Watt
CASE: Welded, hermetically sealed construction.
FINISH: All external surfaces corrosion-resistant and the terminal lead is readily
solderable.
POLARITY: CATHODE TO CASE (reverse polarity units are available upon request and
are designated by an "R" suffix i.e. MR327R or IN3491R).
MOUNTING POSITIONS: Any.
1-51
Characteristic and Conditions Symbol Max Unit

Full Cycle Average Forward Voltage Drop °
0.6 Volts
(rated 10 and Vr , single phase, 60 Hz,.TC = 150 C) VF(AV)
Instantaneous Forward Voltage Drop VF Volts

(iF = 100 Amps, TJ = 25°C) 1.5
Full Cycle Average Reverse Current IR(AV) rnA

(rated Io and Vr , single phase, 60 Hz, TC = 150°C)
1N3491/MR322 10
1N3492/MR323 10
1N3493/MR324 8.0
1N3494/MR325 6.0
1N3495/MR326 4.0
MR327 3.0
MR328 2.5
MR330 2.0
MR331 1.5
DC Reverse Current IR rnA

(RatedVR , TC = 25°C) 1.0
FIGURE 1- MAXIMUM FORWARD VOLTAGE DROP FIGURE 2- MAXIMUM FORWARD POWER DISSIPATION
-
600 70
II
400 / /
200 ,. """'" 60
_+1+
60° CONDUCTION
16 PHASE STAR)
/ V /
100
r;::r ) I 7 / / /
60 120° CONDUCTION V /
~ - 13 PHASE, HALf WAVE OR
ffi
40 t-- - TJ IWC
r--...
/
I
- fULL WAVE, OR
6 PHASE WITH Ii ..../ / V
~ 20 INTERPHASE)
/ /; /
I
i3
10
n. . TJ -25°C / / / /
- . DC: CONTINUOUS
_
~ 4.0
6.0
/ 1/ /
I 2.0
I
I
'iJ /
;: I'~ ......... 180° CONDUCTION
11 PHASE, HALf WAVE - -
~V
.If 1.0 OR fULL WAVE)
0.6
0.4
10 ~ "/
0.2
I~V
0.1 ~
o 0.4 0.8 1.2 1.6 2.0 2.4 10 20 30 40 50 60
V,. MAXIMUM fORWARD VOLTAGE DROP IVOLTS) I'IAYI' AvERAGE fORWARD CURRENf lAMP)
1-52
FIGURE 3 - MAXIMUM CURRENT RATINGS

40
r-
I-- T I 40
~ 35 I-- D~, CONTlN~OUS .....r ..........

r--.,
I 35
f5 ~ 60 1Hz, RESldTiVE OR I~DUCTIVEILOAD - e---
'~" 30 I - -
1 PHASE
30
--
IHALF WAVE OR FULL WAV8 .........
~ 180" CONDUCTION
i'-.
~
ffi
~
25 I---
I---
20 I - -
3 PHASE
IHALF WAVE OR FULL WAVEI
""
./ """'- ...........
..............
"' '-
25
20
............ .......
-- -
81 I-- 120' CONDUCTION
1== ............ ........... "'- I'...
~ 15 15
fi! 6 PHASE STAR V '-..... ...........
I-- ..........
t:
~
10 r--
r--
60' CONDUCTION
t-.. "' '-
...................
r---... ~
10
I-- r--...
J I--
'--
100 110 120 130 140 150 160 170
" '\. 180
o
Te, CASE TEMPERATURE I'CI
FIGURE 4- MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE

2.4 2.4
3 2.2
III I 2.2
I _I I " II
<> 2.0 TJ - Te = 8JC!t) PAY 6<;6 2.0
;j:: ---r
gi
~~
1.8
1.6 - 1<;6+3<;6
I
1.8
1.6
f-- ...-
ffi~ 1.4
--
L4
~8
e:~
~:;
i=~
~~ 0.8
t:;'-
1.2
1.0
0.6
f.---
I-
~
-- 06 1.2
1.0
0.8
0.6
cH 0.4 0.4
0.2 0.2
o 0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (msl
FIGURE 5 - MAXIMUM ALLOWABLE SURGE CURRENT

500 500
--
I I I I
'"~ 300
SURGE APPLIED AT RATED
300
LOAD CONDITIONS
Ii 200
t-
r----. --r--- r-- t-- V'MI",I APPLIED AFTER SURGE
NON·REPETITIVE IMAX 500 SURGES DURING DEVICE lIFETIMEI 200
z
0;
r-- t-. r-- t - ~ ,/
REPETITIVE (UNLIMITED NUMBER OF SURGES, TJ < 175'C BEFORE SURGE APPLIED)
1-1-
~ r--- r-- ~ f-- r- I-t-
~
-;;
100 l -
t-- C\ C\ C\ i--- 100
•, l-
70 I-
i-I CYCLE-I
70
1
50 50
1.0 2.0 5.0 10 20 50 100 200 500 1000
CYCLES AT 60 Hz
1-53
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 6- RECTIFICATION EFFICIENCY FIGURE 1- REVERSE RECOVERY TIME

100
- "":::~
30
.- .. , ;
-I"- ~
20
..........
.......... ~
",
70 ......
~
~ 50 TJ -17S'C
~
\ . TJ -2S'C
\
].
!
~ 7.0
10 " i'.. t'- i""-r--
>..
TJ -2S'C
g \
Iii
l!l ..
I o
~ 5.0 (,'"SA
3A'
...... " ...................
\ ~
~
'"
-rvv-·
CURRENT INPUT WAVEFORM
\ 1\
i:1 3.0
IA .......
r-.. r....
......... ...... r....r-.
=¥~l([
30 oJ
2.0 r-..
\
-rulJ
--- \ 1\
""'r-.
20 I I I I I I I 1.0
1.0 2.0 3.0 S.O 7.0 10 20 30 SO 70 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 S.O 7.0 10
REPETITION RECOVERY (kHz) ).11, RATIO OF REVERSE TO FORWARD CURRENT
FIGURE 8- JUNCTION CAPACITANCE FIGURE 9 - FORWARD RECOVERY TIME

1000 1.0
700 - I--- TJ - 2S'C
SOD I'.. 0.7 ~VF~I /
L
300 ....... ]. r- 1_ tr.-I t
...... TJ = 2S'C ~ 0.5 r- Vh
/
i 200 ! ./
too iill '.,/' V vfr=lV
:.!
. ~ 70 ~
0.3
.--
t350
L.2
d
---- f.--I- --
-----
30
V v,,-2V
20 ...- 1-"-1-
JI
.
10 0.1
1.0 2.0 3.0 S.O 7.0 10 20 30 SO 70 100 1.0 2.0 3.0 S.O 7.0 10
V•• REVERSE VOLTAGE !VOlTS) i, FORWARD PULSE CURRENT lAMPS)
~ :sr~1~ ~ -I~ .01D MOUNTING PROCEDURES

TOSlIlt:~':'D.2°~/W /1IDI I Y
SllOOl~_ I-~_I.... . MR322·MR331 and lN3491-1N34~5 rectifiers are d,sianed to be press-fiued in a heat slRk. in
.L . .... :!../ order to attain lull device ratinas. Recommended protedures for this type of mounting are as follows:
~"'_HfAT •• _ 1. Drill a hole in lite heat sink 0.499 ± .001 Inch in diameter. .
~ -I I O.449·_O.OOIDl~ 2. Break the hole edge as shown to prevent shearing oft' the knurled edae of the rectifier when it II
pressed into the hole. .
HEAT SIll MOUtmlll 3. The depth and width of the break should be 0.010 inch maximum to retain maximum beat sink
surface contact.
4. To prevent damaae to the rectifier durinl pre....in, the presslnl force shouid be applied only on
the shoulder rlnl of the rectifier case as ~wn in the "lUre.
5. The pressinl force should be applied evenly about the shoulder rinl to avoid tUtin. or cantina
of the rKtifier case in the hole durin. the pre....ln operation. Also, tbe use of a liaht industrial
INTIMATE COIftETE KNURl '-...... TtII
lubricant will be of considerable aid.
CONTACTARf.A CONTACT MEA CtIQSIS
. TJtII.CHASSIS IlllUIIIItII
'''::'54
1 N3580I A, Bthru 1N3583I A, B
For Specifications, See 1N2163 Data.
1N3649.1 N3650
Obsolete, discontinued types, replace with devices from the MRl120 series.
1N3659thru 1N3663 (SILICON)

Low-cost silicon rectifiers in hermetically sealed,
press-fit case, designed for operation under severe
environmental conditions. Cathode connected to case,
but available with reverse polarity by adding suffix
CASE 43 "R" to type number.
(00.21)
MAXIMUM RATINGS (TC = 2S oCuniess otherwise noted)

1113&59 1113&&0 11136&1 1113&62 11136&3
Rating . Srmbol 11138591 1lila IN3&lill 11136&2R lN36&3R Units
Peak Repetitive Reverse Voltage VRM(rep) 50 100 200 300 400 Volts
RMS Reverse Voltage Vr 35 70 140 210 280 Volts
Average Half-Wave Rectified For- 10

ward Current with Resistive Load
@ 100°C case 30 Amp
@ 150°C case 25 Amp
Peak One Cycle SUrge Current IFM(surge) 400 Amp

(150°C case temp, 60 Hz)
Operating Junction Temperature TJ -65 to +175 °c

Storage Temperature T stg -65 to +200 °c
Symbol
IN_ IN_ 1113&&1 11136&2 lN3&&3
Characteristic lN3&59R IN_R IN3&61R lN3&62R 1113. Unit
Maximum Forward Voltage VF 1.2 1.2 1.2 1.2 1.2 Volts
at 25 Amp DC Forward Current
Maximum Full Cycle Average
Forward Voltage Drop @ Rated VF(AV) 0.7 0.'1 0.7 0.7 0.7 Volts
PlV and Current
Maximum Full Cycle Average
Reverse Current @ Rated PlV and 5.0 3.0 rnA
Current (as half-wave rectifier, ~(AV) 4.5 4.0 3.5
resistive load, 150°C)
Thermal Resistance 8JC 1.0 °C!W
1-55
40 30
35
r--...
1500 C
250 C
....... -5SO.C
'" 1
\
\
, \
o
o 0.2 0.4
V.V J
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
o
o
..
50 100 150
\ 200
V,. fORWARD VOLTAGE (VOLTS) T", CASE TEMPERATURE (OC)
1N3659-1N3663 rectifiers are designed for press-fitted mounting in a heat sink. Recommended
procedures for this type of mounting are as follows:
1. Drill a hole in the heat sink 0.499 ± .001 inch in diameter.

2. Break the hole edge as shown to prevent shearing off th.e knurled edge of the rectifier when it is press-
ed into the hole.
3. The depth of the break should be 0.010 inch maximum to retain maximum heat sink surface contact
with the knurled rectifier surface.
4. Width of the break should be 0.010 inch as shown.
These procedures will allow proper entry of the rectifier knurled surface, provide good rectifier- heat
sink surface contact, and assure reliable rectifier operation. If the break is made too deep, thereby reduc-
ing contact area for heat transfer, reliability of operation will be impaired.
These devices can be mounted in a thin chassis by inserting the rectifier through an additional heat sink
plate which is mounted. in intimate contact with the upper side of the chassis. This provides additional con-
tact area for the rectifier knurled edge, as well as additional.heat sink capacity.
TYPICAL THERMAL
RESISTANCE, CASE
TO SINK, fJ~s = O.2·C/W
RIVET
ADDITIONAL
HEAT SINK PLATE
INTIMATE COMPLETE
CONTACT AREA KNURL CONTACT
AREA
THIN CHASSIS
THIN·CHASSIS MOUNTING
1-56
1N3675 thru 1N3703 (SILICON)
CASE 59 Recommended for applications requiring an exact replacement only.

(00-41) For new designs and industry preferred replacement devices, see
IN4728 series.
1-57
1N3785 thru 1N3820
CASE 55 Low silhouette single-ended package for printed cir-

cuit or socket mounting. Cathode connected to case.
MAXIMUM RATINGS
D C Power Dissipation: 1. 5 Watts at 25°C Ambient. (Derate 10 mW;oC).
The type numbers shown have a standard tolerance of ±20% on the zener volt-
age. Standard tolerances of ±10% and ±5% on individual units are also available
and are indicated by suffixing" A" for ±10% and "B" for ±5% units to the standard
type number.
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
VF = 1.5 V max @ 300 mA
Max Zener Impedance Typical
Reverse leakage Current" Zener
Nominal Test Voltage
Zener Voltage @ I" Current Max DC Zener Temp. Coef!.
Type No. (V,) Volts (I,,) 1"@I" 1"@I" IZlI Current I, Max %I'C
mA ohms ohms mA (1,.) mA (ILA) V" V"
IN3785 6.8 55 2.7 700 1.0 195 150 5.2 4.9 .040
IN3786 7.5 50 3.0 700 0.5 175 75 5.7 5.4 .045
1N3787 8.2 46 3.5 700 0.5 155 50 6.2 5.9 .048
1N3788 9.1 41 4.0 700 0.5 140 25 6.9 6.6 .051
1N3789 10 37 5 700 0.25 125 10 7.6 7.2 .055
1N3790 11 34 6 700 0.25 115 5 8.4 8.0 .060
1N3791 12 31 7 700 0.25 105 5 9.1 8.6 .065
1N3792 13 29 8 700 0.25 98 5 9.9 9.4 .065
1N3793 15 25 10 700 0.25 85 5 11. 4 10.8 .070
1N3794 16 23 11 700 0.25 80 5 12.2 11. 5 .070
IN3795 18 21 13 750 0.25 70 5 13.7 13.0 .075
1N3796 20 19 15 750 0.25 62 5 15.2 14.4 .075
1N3797 22 17 16 750 0.25 56 5 16.7 15.8 .080
IN3798 24 16 17 750 0.25 51 5 18.2 17.3 .080
1N3799 27 14 20 750 0.25 46 5 20.6 19.4 .085
IN3800 30 12 25 1,000 0.25 41 5 22.8 21. 6 .085
1N3801 33 11 30 1,000 0.25 38 5 25.1 23.8 .085
1N3802 36 10 35 1,000 0.25 35 5 27.4 25.9 .085
IN3803 39 10 40 1,000 0.25 31 5 29.7 28. 1 .090
1N3804 43 9.0 45 1,500 0.25 28 5 32.7 31. 0 .090
1N3805 47 8.0 55 1,500 0.25 ~ 5 35.8 33.8 .090
IN3806 51 7.4 65 2,000 0.25 24 5 38.8 36.6 .090
1N3807 56 6.7 75 2,000 0.25 22 5 42.6 40.3 .090
1N3808 62 6.0 85 2,000 0.25 20 5 47.1 44.6 .090
IN3809 68 5.5 95 2,000 0.25 18 5 51. 7 49.0 .090
1N3810 75 5.0 110 2,000 0.25 16 5 56.0 54.0 .090
1N3811 82 4.5 130 3,000 0.25 14 5 62.0 59.0 .090
1N3812 91 4.1 150 3,000 0.25 13 5 69.2 65.5 .090
IN3813 100 3.7 200 3,000 0.25 12.0 5 76.0 72.0 .090
1N3814 110 3.4 300 4 000 0.25 11. 0 5 83.6 79.2 .095
1N3815 120 3.1 350 4,500 0.25 10.5 5 91. 2 86.4 .095
1N3816 130 2.9 400 5,000 0.25 9.0 5 98.8 93.6 .095
IN3817 150 2.5 700 6,000 0.25 8.0 5 114.0 108.0 .095
1N3818 160 2.3 750 6,500 0.25 8.0 5 121. 8 115.0 .095
IN3819 180 2.1 800 7,000 0.25 7.0 5 137.0 130.0 .095
IN3820 200 1.9 1,000 8,000 0.25 6.0 5 152.0 144.0 .100
SPECIAL SELECTIONS AVAILABLE INCLUDE: (See Selector Guide for details)

1 - Nominal zener voltages between those shown.
2 - Matched sets: (S.tandard T:olerances a.re ±~.O%. ±.3:0%. ±2.0%. ±l.O%) depending on voltage per device.
a. Two or more Units for s~nes connection with speclf.le.d tolerance on tot~1 yoltage. Series matched sets make possible higher
zener voltages and prOVide lower temperature coeffiCIents. lower dynamIC Impedance and greater power handling ability.
b. Two or more units matched to one another with any specified tolerance.
3 - Tight voltage tolerances: 1.0%,2.0%,3.0%.
*VR1 - Test Voltage for 5% Tolerance Device. VR2 - Test Voltage for 10% Tolerance
Device. No Leakage Specified as 20% Tolerance Device.
1-58
1 N3821 thru 1N3830 (SILICON)
SERIES
(lM3.3AZ10 thru lM7.5AZ10)
lN3016 thru lN3051

SERIES
(1 M6.8Z thru 1 M200Z)
Desig'IH"I'S Data Sheet

1.0 WATT
ZENER REGULATOR DIODES
1.0 WATT METAL SILICON ZENER DIODES
3.3-200 VOLTS
a complete series of 1.0 Watt Zener Diodes with limits and
operating characteristics that reflect the superior capabilities of
silicon·oxide·passivated junctions. All this in an axial·lead, metal
package offering protection in all common environmental conditions.
• To 100 Watts Surge Rating@10ms

• Maximum Limits Guaranteed on Five Electrical Parameters
• Power Capability to MI L·S·19500 Specifications
Designer's Data for "Worst Case" Conditions
The Designers Data sheets permit the design of most circuits entirely from the in-
formation presented. Limit curves - representing boundaries on device characteris-
tics - are given to facilitate "worst case" design.
*MAXIMUM RATINGS
DC Power Dissipation@TA ~ 25°C PD 1.0 Watt

Derate above 25°C (See Figure 1) 6.67 mWtOC
Operating and Storage Junction TJ.Tstg -65 to +175 °c
Temperature Range
Lead Temperature 230°C at a distance not less than 1/16" from the case for 10 seconds.
~O.215MAXOIA
CASE: Welded. hermetically sealed metal and glass.
FINISH: All external surfaces are corrosion-resistant and leads are readily solderable
and weldable.
POLARITY: Cathode connected to the case. When operated in zener mode, cathode will
be positive with respect to anode.
FIGURE 1 - POWER·TEMPERATURE DERATING CURVE

2.0
ll= lEAJ lENG+H-
TO HEAT SINK
r--
z
o
",1118"
~~ 1.2
"-.. ~
i5
~
31;::'- ::::--..
'"w ........... 1'-..,
..........
~ 0.8 to" ........... 1--. I"::-
."'" r---... ~
.'"x 0.4
~~
.......
~
""
0 AIIJEDECdimeniionsandnotesapply
o 20 40 60 80 100 120 140 160 180 200

CASE 52
TL.lEAD TEMPERATURE (OCI 00·13
• Indicates JEDEC Registered Data.
1-59
1N3821 thru 1N3830, 1N3016thru 1N3051 (continued)
ELECTRICAL CHARACTERISTICS (Tc = 25 0 C unless otherwise noted)

VF = 1.5 V max @ IF = 200 mA for all types
*Nominal *Max Zener I mpeciance Max Reverse Current
JEDEC Zen.r Voltage *Test (Note 4) (Note 5) ·Max DC Zener
Type No. VZ@IZT Current Current
(Flangeloss) Volts IZT ZZT@IZT ZZK@IZK IZK IR Max VRI VR2 IZMmA
(Note 1 8< 2) INote3) mA Ohms Ohms mA (~A) 5% 10% (NoIoS)
lN3821
lN3822
3.3
3.6
76
69
10
10
400
400
1.0
1.0
·,00
·tOO
·'.0
'1.0 ...
1.0
1.0
276
252
lN3823 3.9 64 9.0
9.0
400
400
1.0
1.0
,.0 ·'.0
*1.0
1.0
1.0
238
213
lN3824 4.3 .8 '10
lN3B25 4.7 '3 8.0 500 1.0 '10 "1.0 1.0 194
1N3B26 5.1 49 7.0 550 1.0 '10 ·1.0 1.0 178
lN3827 5.6 45 5.0 600 1.0 '10 ·2.0 2.0 162
1N3828 6.2 41 2.0 700 1.0 '10 ·3.0 3.0 146
lN3829 6.S' 37 1.5 500 1.0 '10 ·3.0 3.0 133
tN3B30 7.5 34 1.5 250 1.0 '10 ·3.0 3.0 121
lN30l6 6.8 37 3.' 700 1.0 10 '.2 4.' 140

1N3017 7.' 34 4.0 700 a.• 10 '.7 5.4 125
1N30tS 8.2 31 4.5 700 0.5 10 6.2 5.9 115
lN3Gt9 9.1 28 '.0 700 a.• 7.5 6.9 6.6 10.
1N3020 10 25 7.0 700 0.25 5.0 7.6 7.2 95
1N302t 11 23 8.0 700 0.25 '.0 8.' 8.0 85
lNJQ22 12 21 9.0 700 0,25 2.0 9.1 8.6 80
lN3023 13 19 10 700 0.25 1.0 9.9 9.4 74
lN3024 17 1. 700 0.25 1.0 11.4 10.8 63
lN3025 "
16 15.5 16 700 0.25 1.0 12.2 11.5 60
lN3026 18 14 20 750 0.25 a.• 13.7 13.0 '2
lN3027 20 12.5 22 750 0.25 a.• 15.2 14.4 47
1N3Q28 22 11.5 23 750 0.25 O.S 16.7 15.8 43
lN3029 24 10.5 25 750 0.25 a .• 18.2 17.3 40
1N3030 27 9.5 35 750 0.25 0.5 20.6 19.4 34
lN3D3t 30 8.5 40 1000 0.25 0.5 22.S 21.6 31
lN3032 33 7.' 45 1000 0.25 0.5 25.1 23.8 28
lN3033 36 7.0 50 1000 0.25 a .• 27.4 25.9 26
1N3034 39 6.5 60 1000 0.25 a .• 29.7 28.1 23
1N3035 43 6.0 70 1500 0.25 0.5 32.7 31.0 21
1N3036 47 5.5 80 1500 0.25 a .• 35.8 33.8 19
lN3037 51 5.0 95 1500 0.25 a .• 38.8 36.7 18
lN3038 56 4.5 110 2000 0.25 0.5 42.6 40.3 17
1N3039 62 4.0 125 2000 0.25 0.5 47.1 44.6 15
1N3D40 68 3.7 150 2000 0.25 0.5 51.7 49.0 14
1N3041 75 3.3 175 2000 0.25 0.5 56.0 54.0 12
lN3042 82 3.0 200 3000 0.25 a .• 62.2 59.0 11
1N3043 91 2.8 250 3000 0.25 0.5 69.2 65.5 10
lN3044 100 2.5 350 3000 0.25 0.5 76.0 72.0 9.0
lN3D45 110 2.3 450 '000 0.25 0.5 83.6 79.2 8.3
lN3046 120 2.0 550 4500 0.25 0.5 91.2 86.4 8.0
lN3047 130 1.9 700 5000 0.25 0.5 98.8 93.6 6.9
lN3048 150 1.7 1000 6000 0.25 a.• 114.0 108.0 5.7
1N3049 160 1.6 1100 6500 0.25 a.• 121.6 115.2 5.4
1N3050 180 1.4 1200 7000 0.25 0.5 136.8 129.6 4.9
1N3051 200 1.2 1500 8000 0.25 0.5 152.0 144.0 4.6
"JEDEC Registered Data on lN3821 thru 1N3830and 1N3016 thru lN3051
NOTE 1 - TOLERANCE AND TYPE NUMBER DESIGNATION

1N3821 thru 1N3830 - The JEDEC type numbers shown have a (B) MATCHED SETS: (Standard To)erances are ±5.0%. ±2.0%.
st3'1dard tolerance for the nominal zener voltage of ±10%. A ±1.0%).
standard tolerance of ±5% for individual units is also available and Zener diodes are available in sets consisting' of two or more
is indicated by adding suffix "A" to the standard type number.
matched devices. The method for specifying matched sets
1N3016 thru 1N3051 - The JEDEC type numbers shown have a is similar to the one desc;ribed in (A) except that two addi-
standard tolerance of ±20% for the nomina) zener voltage. Suffix tional suffixes are added to the code number described.
"A" for ±10% units or "B" for ±5% units. These devices are marked with code letters to identify the
matched sets and, in addition, each unit in a set is marked
I
NOTE 2 - SPECIALS AVAILABLE INCLUDE: with the same serial number. which is different for each
set ordered.
(A) NOMINAL ZENER VOLTAGES BETWEEN THE VOLT-
T;;;r;;;;
AGES SHOWN AND TIGHTER VOLTAGE TOLER- 1 M51 A 5 B
ANCES: To designate units with zener voltages other than
those assigned JEDEC numbers and/or tight v,oltage toler-
ances (±3%. ±2%. ± 1%1. the Motorola type number should
D Te
Desc~~~ion
lNJ;21
(each device)
thru Tolerance
T
Ove:':1
Tolerance
lN3830 per device of set (±1%)
be used. Motorola only ±5% (omit for
1 M 5.1 A Z 3
Device
Description
J T
Motorola
T
Nominal 1N3821
Voltage
T
thru
T
Zener
Diode
T
Tolerance
(±%)
±20% units)
Code
A - Not used
1N3830 EXAMPLE lM51Z5Bl B - Two devices in series
only C - Three devices in series
EXAMPLE 1M5_1AZ3 o- Four devices in series
1-60
APPLICATION NOTE
(C) ZENER CLiPPE RS: (Standard Tolerance±10% and ±5%).
Since the actual voltage available from a given zener diode is
Special clipper diodes with opposing Zener junctions built temperature dependent, it is necessary to determine junction tem-
into the device are available by using the following nomen- perature under any set of operating conditions in order to calculate
clature: its value. The following procedure is recommended:
1 M 7.5 A Z Z 10 Lead Temperature. TL. should be determined from:
T
1
Device
Description
Motorola
T
Nominal
Voltage
T
lN3821
thru
lN3830
only
Zener
Diodes
T cJperT
T clerance for each of

the two Zener voltages
(not a matching require-
ment)
(JLA is the lead-to-ambient thermal resistance (oC/W) and
Po is the power dissipation. The value for () LA will vary
and depends on the device mounting method. ()LA is gen·
erally 30-40 0 C/W for the various clips and tie points in
common use and for printed circuit board wiring.
The temperature of the lead can also be measured using a thermo·

Example: 1M7.5AZZ10 couple placed on the lead as close as possible to the tie point. The
NOTE 3 - ZENER VOLTAGE (VZ) MEASUREMENT thermal mass connected to the tie point is normally large enough
so that it will not significantly respond to heat surges generated in
Motorola guarantees the zener voltage when measured at 90 the diode as a result of pulsed operation once steady· state condi-
seconds while maintaining the lead temperature (TLl at 30De ± ,oC, tions are achieved. Using the measured value of TL' the junction
3/8" from the diode body. temperature may be determined by:
NOTE 4 - ZENER IMPEDANCE (ZZ) DERIVATION

The zener impedance is derived from the 60 cycle ae voltage, ~T JL is the increase in junction temperature above the lead
which results when an ae current having an rms value equal to 10% temperature and may be found from Figure 6 for a train of
ofthe dc zener current (I ZT or IZK) is superimposed on IZT or I ZK. power pulses (L "" 3/8 inch) or from Figure 7 for dc power.
NOTE 5 - REVERSE LEAKAGE CURRENT IR

Reverse leakage currents are guaranteed only for 5% and 10%
zener diodes and are measured at VR as shown in the Electrical For worst-case design. using expected limits of IZ. limits of P D
Characteristics Table. and the extremes of T J(a T J) may be estimated. Changes in voltage.
VZ. can then be found from:
NOTE 6 - MAXIMUM ZENER CURRENT RATINGS (lZM)

lN3821 thru lN3830 - Maximum zener current ratings are based
on maximum voltage of 10% tolerance units. 8 VZ • the zener voltage temperature coefficient. is found from
Figures 2 and 3.
lN3016 thru lN3051 - Maximum zener current ratings are based
Under high power-pulse operation. the zener voltage will vary
on maximum voltage of 5% tolerance units.
with time and may also be affected significantly by the zener resist-
ance. For best regulation. keep current excursions as low as possible.
NOTE 7 - SURGE CURRENT li r ) Data of Figure 6 should not be used to compute surge capability.
Surge current is specified as the maximum allowable peak, non- Surge limitations are given in Figure 8. They are lower than would
recurrent square-wave current with a specified pulse width, PW. be expected by considering only junction temperature. as current
The data presented in Figures 8 and 9 may be used to find the crowding effects cause temperatures to be extremely high in small
maximum surge current for a square wave of any pulse width spots resulting in device degradation should the limits of Figure 8
between 0.01 ms and 1000 ms. be exceeded.
1-61
lN3821 thru lN3830, lN3016thru lN3051 (continued)
TEMPERATURE COEFFICIENTS AND VOLTAGE REGULATION

(90% OF THE UNITS ARE IN THE RANGES INDICATED)
FIGURE 2 - TEMPERATURE COEFFICIENT-RANGE FIGURE 3 - TEMPERATURE COEFFICIENT-RANGE

FOR UNITS TO 12 VOLTS FOR UNITS 10 TO 220 VOLTS
E.J
I-- r::::.-
8.0 200
.t:; V @
@ 7.0
V
~ 6.0
:>
I
t .. V
V
./
~
.s:> 1---~ ...........--
-
lOa
.s 5.0 >-
f-
~ 4.0
........ !---' ~ 70 ./
U ./
U ./
~ 3.0
/ u:
t:J 50
7 ./ RANGE
/ ./ T 1/ ,/
8 2.0 8
'"a::=> 1.0
/ [7 RANGE
'"
~ 30
/ /
f-
;'?
1/ / ~ 1//
'"
~
....-/ / w
"-
rl
-1.0
V ~
>-
f-
;;? -3.0
~
-2.0
3.0
./
4.0 5.0 6.0 7.0 8.0 9.0 10 II 12
N
;; 10
a
/1W ~ W W 100 IW I~ IW IW B
Vz, ZENER VOL TAGE @ IZT (VOLTS) Vz, ZENER VOLTAGE@IZT(VOLTS)
FIGURE 4 - TYPICAL VOLTAGE REGULATION

a
in
~ 7. a
o 5. a 7'
2:
~ 3. O~ IZ = 0.1 IZM to 0.5 IZM --- 17 - -
; 2. a
o
>
"'
./v
~ 1. a --
N O. 7 -.~
~ O. 5
---
to
~ 0.3
./
'"uN 0.2 \ /
? \ ~
o. I
2.0 3.0 5.0 10 20 30 50 lOa 200
VZ, ZENER VOLTAGE AT IZT (VOLTS)
FIGURE 5 - MAXIMUM REVERSE LEAKAGE

(95% OF THE UNITS ARE BELOW THE VALUES SHOWN)
lOa
F (ODES NOT INCLUDE lN3828, lN3829, AND lN38301
50
TA=125 0 C_
I'\.
TA - 25 0 C
0.1
3.0 5.0 10 30 50 lOa ISO 200
NOMINAL Vz (VOLTS)
1-62
FIGURE 6 - TYPICAL THERMAL RESPONSE L, LEAD LENGTH = 3/8 INCH

100
= D .O.~
.....
"..,..
- - 0=0.2
= =
- 0-0.1
0=0.05
-DUTY CYCLE. 0 = I1/t2
SINGLE PULSE LlTJL OJLIt)PPK
r-SLIL
PPK : ~:
- - 0 0.02 REPETITIVE PULSESLlTJL -OJL(t. D)PPK ~tl :
~t2~
1.0 -tT
0= om --
StGi E rUi SE
NOTE: Below 0.1 Second, Thermal
Response Curve is Applicable
to any Lead Length (Ll.
II II
I I
II II I
0.003 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30 50 100 200
t. TIME (SECONDS)
FIGURE 7 - TYPICAL THERMAL RESISTANCE

~ 140
/"
~
z
~
~ 130 /
,/
-'
«
:E
ffi 120 /"
"'-
:;5 PRIMARY PATH OF I
CONDUCTION IS THROUGH
/'
~e.. THE CATHODE LEAD ./
-' 110
6 V
>:-
z
'"t; 100 V
z
;:; /'
~ 90 /'
1/8 1/4 3/8 112 5/8 3/4 118 1.0
L. LEAD LENGTH TO HEAT SINK (INCH)
FIGURE 8 - MAXIMUM NON·REPETITIVE SURGE CURRENT

4000
3000
OIFFUSEO JUNCTION
DEVICE
g2000
~ .L
::!i
~
::; 1000
SUUAR E WAVE PU LSE:
PULSE WIDTH = 0.01 ms
DUTY CYCLE = 0%
-
~ ~ lL = 50°C ±20C@3/8"
~ 800
600
.......... I I
"ALLOly JUNICTIOIN riEJldE
400 -I T -I Tff
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
VZ.ZENER VOLTAGE (VOLTS)
1-63
lN3821 thru lN3830, lN3016 thru lN3051 (continued)
FIGURE 9 - SURGE POWER FACTOR
1.0
0.7 MUL TlPL Y NORMALIZEIl POWER FACTOR TIMES FIGURE~;.t
0.5 SURGE POWER POINTFOR VOLTAGE IN OUESTION, TO OBTAIN
~D=O SURGE CAPABILITY AT OIFFERENTPULSE WIDTHS AND DUTY
0.3 ....... CYCLES. THE 1.0 X REFERENCE POINT IS 0.01 m,ATO% OUTY
t'" 0.2
r-.. CYCLE.
r-
:l:
ffi O. 1 r--........
~ 0.07
~ 0.05 r--
~ 0.03 ~ ......
r-- r-.
ffi
N
::J
'"
~ 0.01
o
Z
0.02
0.007
0.005
I--
0.05
0.1
t---
- r- r---
--
0.003 0.2
0.002
0.001
0.01 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 30 50 70 100 300 500 700 1000
saUAREWAVE PULSEWIOTH (m,)
FIGURE 10 - TYPICAL CAPACITANCE

10,000
5000
TJ 25°C -
...
w
~
'-'
z
2000
1000
500
- VZ=3.9V
8.2 V
'"
-
I-
;:;
<l': 200
~ 27 V
;3
100 I--.
U 56V ~
50 91V=
20
200 V
10
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
VR, REVERSE VOLTAGE (VOLTS)
1-64
lN3879 thru lN3883
MR1366
Desig'Iuc"rs Data Sheet

FAST RECOVERY
POWER RECTIFIERS
STUD MOUNTED 50-600 VOL TS
FAST RECOVERY POWER RECTIFIERS 6 AMPERES
. designed for special applications such as dc power supplies, inverters,

converters, ultrasonic systems, choppers, low RF interference, sonar power
suppl ies and free wheeling diodes. A complete line of fast recovery rectifiers
having typical recovery time of 100 nanoseconds providing high efficiency
at frequencies to 250 kHz.

The Designers Data sheets permit the design of most circuits entirely from the
information presented. Limit curves - representing boundaries on device character-
istics - are given to facilitate "worst case" design.
~. ot,
~O.437
*MAXIMUM RATINGS
Rating Symbol 1N3879 1N3880 1N3881 1N3882 1N3883 MR1366 O.424-..._ _ _ _ G
.,
Peak Repetitive Reverse VOltage Volts MAX
Working Peak Reverse Voltage 50 100 200 300 400 600
DC Blocking Vol~age
Non·Repetitive Peak Reverse Voltage VRSM 75 150 250 350 450 650
RMS Reverse Voltage VRIRMS) 35 70 140 210 280 420 Volts
Average Rectified Forward Current '0 Amps
(Single phasa, resistive load, 6.0
TC - 1000 C)
Non·Repetitive Peak Surge Current Amps
(surge applied at rated load _----150
continuous) (one cycle)
Operating Junction Temperature Range ~65 to +150 'c
Storage Temperature Range -65 to +175
THERMAL CHARACTERISTICS·
Symbol
Thermal Reslstancl1, Junction to Case ROJC 3.0
Motorola guarantees the listed value, although parts having higher values of thermal HlSISlance will meet the current rating.
Thermal resistance is not required by the JEDEC registration.
-Dimension isa diameter
-ELECTRICAL CHARACTERISTICS
All JEDEC dimenSions and notes apply
Characteristie Symbol Typ M•• Unil
Instantaneous Forward Voltage 'F Volts
(IF - 19 Amp, TJ - 1S00C) 1.5
Volts
CASE 568
Forward Voltage VF
1.0 1.2 DO·4
(IF - 6.0Amp, TC - 25 0 C)
Reverse Current (rated dc voltage) TC - 25 C
TC-1000C
'R 10
0.5
15
1.0
.A
mA
REVERSE RECOVERY CHARACTERISTICS

Characteristic Symbol Min TV. M.. Unil
Reverse Recovery Time
-UFM" 1.0 Amp to VA '" 30 Vdc, Figure 16) '" 100
200
200
400
CASE: Welded, hermetically sealed
(lFM ~ 36 Amp, difdt ~ 25 Alps, Figure 171
Raverse Recovery Current 'RM(REC) FINISH: All external surfaces corrosion
-(IF - 1.0 Amp to VR - 30 Vdc, Figure 16) 2.0 resistant and readily solderable
POLARITY: Cathode to Case
WEIGHT: 5.6 Grams (approximately)
·1 ndicates JEDEC Registered Data for 1 N3879 Series.
1 -65
1N3879 thru 1N3883, MR1366 (continued)
FIGURE 1 - FORWARD VOLTAGE FIGURE 2 - MAXIMUM SURGE CAPABILITY
200 100
0
I"'- I III I I I I
Prior to surge, the rectitier
I I
I I
1"',.....
10 0 vV 0
is operated such that TJ '" 150 oC;
VRRM may be applied between
each cycle of surge --i-
TJ - 25'C 0
0 L
0 ~ I
50 V
~'150'C- t-
L.
III '-, )'-.,.!
L v 0
f'~
0 V-
Of-- f\ 1\ 1\ r-
I L Of-- f--- ··--L-l CYCLE
II 0
0
V 0 I I IIII
I L3.0 5.0J 1111
f o
1.0 2.0 7.0 10
NUMBER OF CYCLES AT 60 H,
20 30 50 70 100
0 I NOTE 1
I
0
0
J=[Jl _t ll _
PPk Pllk
DUTY CYCLE, 0 ~ lpit)
PEAK POWER,Ppk,is peak Of. '"
eqUivalent square power pulse
.~ I I f---'1-----1 TiME
1. 0
I To determme ma~imum junction temperatur~ of the diode in
the following procedure is recommended
J given Situation,
The temperatLJre of the case SllOUld be measured llsing a thermocouple plal=ed

all the case at the temperature reference pom! (see Note 3). The thermal mass
o. 7 connected to the case is normally large enough so that II will not signiftcantiv
respond to heal surges gelleraled ulthe dIOde as a resul1 at pulsed operation once
o. 5 steady-slate condllionsareachieved. USing the measured value of TC, the junction
temperaturemav be determined bV
TJ=TC+ TJC
0.3 where TJC is the increase in function temperatllre above the case temperature
It may be determined by
[;,. TJC = Ppk . ROJC [0 + (1 - 0) . r(1j + tpl + dtp) dq)]
O. 2 where
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 r(t) " normalized value of tranSient thermal resistance at time, t, from Figure
3, i.e
'F, INSTANTANEOUS FORWARD VOLTAGE IVOLT~I
r (11 + tpl " nOrmijllled value of transient thermal resistance at time 11 t tp
FIGURE 3 - THERMAL RESPONSE
1. 0
3
2
-
1
,....V
5
V
3
(SEE NOTE 1)
0.0 2
0.0 1 I111I1
0.001 0.002 0.005 O.oJ 0.02 0.05 0.1 0.2 0,5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10,000
t,TIME (m,)
1-66
SINE WAVE INPUT SQUARE WAVE INPUT

FIGURE 4 - FORWARD POWER DISSIPATION FIGURE 5 - FORWARD POWER DISSIPATION
8.0,-----,--,----,-.--...--,-r-----.or------.----, 8.0
0: 7.0 oc- CAPALTIVE LiOAOS IJ / /

~ J / // de
o Ui 6.0 f---+--:-t---iH----I'---V---7''_+_
"'>-
«>-
IIPK)o2d_
O-IIAV) I L ~
~ ~ 5.0 o q---------
1 J /
0-
~z
~ ~ 4.01--+--tf--r-xr--t---+--t---t------1
2.0 - 5.0 ----I[L~ '/
0
~~
> ~ 3.0f--+-+y.,.y.+--t--+--+---f----j 0 /~ ~
""'.0
:; 2.0 0
h W
E
2.0 3.0 4.0 5.0 6.0
IFIAV), AVERAGE FORWARD CURRENT lAMP)
7.0 8.0
:/W 1.0 2.0 3.0 4.0 5.0 6.0
IFIAV), AVERAGE FORWARD CURRENT lAMP)
7.0 8.0
FIGURE 6 - CURRENT DERATING FIGURE 7 - CURRENT DERATING
0: 8. 0 - 8.0 0 -
0:
'"
:0.
~ 7.0
- )-- ---- ----
f---- '"
:0. 7.0 r-
/ RESISTIVE LOAO
~
~
oo
'-'
o
'"
«
6. 0 -
-
5. 0 -
-
i-- ---- --
~
"'
----+----"-
/ CAPACITIVE LOAD
~L~o.
......... ~IIAV)
-- 0:
'"
oo
~
'"
6.0
5.0
f-
~
)--
"'"
~~
..........""" ~'
~
o
4. 0 -
-
3.0 - ,
_.- ---_.
.- - ._-
-----
-_.-. ~
~~
10
20
«
~
o
~
4.0
3.0 -
- /-CAPACITIVE
LOA OS
IIPK) _ ~ ~" "
~
~> ~~
w
'";i
IIAV) - 2.0;5.0
------- ~~
«
:; 1.0
«
2.0 --
- i - ~~
w
>
«
2.0 --j ) - - _ ,10 -----
:;: 1.0 -
-------
~O--------- ---- ---- ~~
" "
u: «
o I-.J ~ o' -
o 80 90 100 110 120 130 140 150 o 80 90 100 110 120 130 140 150
TC, CASE TEMPERATURE 1°C) TC, CASE TEMPERATURE 1°C)
FIGURE 8 - TYPICAL REVERSE CURRENT FIGURE 9 - NORMALIZED REVERSE CURRENT
10 1
-
- = VR - 100 V
./
V
V
1
/'
10-2 V
100 200 300 400 500 600 700 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR, REVERSE VOLTAGE IVOLTS) TJ, JUNCTION TEMPERATURE 10C)
1-67
lN3879 thru lN3883, MR1366 (continued)

FIGURE 10 - FORWARD RECOVERY TIME F.IGURE 11 - JUNCTION CAPACITANCE
~ 5.01
w
~
>-
10
7. o I
f----------
3.of---------- "ff+-
I-tfr Vfr
f----
TJ 25°C
II'
10 0
0
- -. f-...
TJ ~ 25°C
~
...........
2. 0 r-.....
>
§ 1.0
V-Vir 1.1 V
r"'--t--.
~
0
~ o. 7
~ o. 5 0
5: o. 3 i
i: o.
2~
.-V
o. 1 I0
1.0 2.0 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100
'F. FORWARD CURRENT lAMP) .. VR. REVERSE VOLTAGE IVOLTS)
TYPICAL RECOVERED STORED CHARGE DATA

FIGURE 12 - T J = 2SoC (SEE NOTE 2) FIGURE 13 - T J = 7SoC
r. 0 2. 0
3
~ o. 5
IFM
40 A
~ 20 A
~
w
1. 0
IFM' 20 ~ 1
I'\.""- ~ 40 A
5~ o.2 ....- ' / 17 [/1.- ~
13
O.5
V
~~
o
w
./ 1/
o
t;; o. I
~
~ o. 2 ./ V V v
V
~ o
0 t> "'- I...-V~
r
~ 0.0
o
5
.~
~ ~ i--'
<::::: -,
'\
I
5.UA
10 A
~
~
_
o. 1
0.0 5 5.0A
lOA
:~ v.- 10 ~ 1.0 A
0.0 0.0 2 ~ ~i--'
LO 2.0 5.0 10 20 50 100 10 2.0 5.0 10 20 50 100
di/dt (AMP/J.ls) di/dt.IAMP/"s)
FIGURE 14 - T J = 100°C FIGURE 15 - T J = 150°C

2. 0 2. 0
3. 1. 0
IF~ ~ 20lA 3w 1. 0
IFM~4JA 1/],..
w -
40 A
g~ o.5 Ix g~ o. 5
1/ 1/ ....-
~ /' V v[,... ~ /' .-< v j..
~ o. 2 v ~ o. 2
~ o. 1 ~k i--'
o
w
~
w .1
~ fY P<
i)OA-
> >
lOA 10 A
§.
c: 0.0 5 5.0:A---t ~_ 0.0 5
1.0 A
CJ
'" ~v
:'0 A
....-/. -'
0.0 2 Jae / "l 0.0 2 ~~
1·0 2.0 5.0 10 20 50 100 10 2.0 5.0 10 20 50 100
dildt.IAMP/ps) di/dt IAMP/"s)
1~68
FIGURE 16 - REVERSE RECOVERY CIRCUIT
A - TEKTRONIX 545A, K PLUG IN

115 Vac 10 k RI 30U PRE-AMP, P6000 PROBE OR EQUIVALENT
60 Hz ZW 3U 50W
Z5W NON-INDUCTIVE RI - ADJUSTED FOR 1.4 UBETWEEN
POINT Z OF RELAY AND RECTIFIER
UNIT
INDUCTANCE~38~H
UNDER TEST
RZ - TEN-I W, 10 n.
1% CARBON CORE
A IN PARALLEL
TA" Z5 ~1~oC FOR RECTIFIER

RZ
IU MINIMIZE ALL LEAD LENGTHS
lOW
30 Vdc CI NON-INDUCTIVE
1.0 Adc FROM CONSTANT VOLTAGE SUPPLY
CONSTANT VOLTAGE LO"F RIPPLE" 3 mVrms MAX
SUPPLYo-+_ _4 _ _ _ _---<~-----.3~00-V_4_-_0- Zout" Il>UMAX,OCtoZ kHz
FIGURE 17 - JEDEC REVERSE RECOVERY CIRCUIT

RI
LI
RI "50 Ohms di/dt ADJUST
T1
RZ" Z50 Ohms
01 "IN4723
DZ" IN4001
03" IN4933 IZO v 3 : ) c ,ll, 03 CI
SCRI "MCR729-10 60 Hz 'IPK) ADJUST om
CI"O_5to50~F
CZ • 4000 ~F 1:1
L1 " 1.0 - Z7 ~H
OZ
T1 = Variac Adjusts I(PK) and di/dt
TZ" 1:1
T3 = 1:1 (to trigger circuit) 01
CURRENT
VIEWING
RESISTOR
NOTE 2
Reverse recovery time is the period which elapses from the

dUdt
time that the current, thru a previously forward biased rectifier
diode, passesthru zero going negatively until the reverse current
recovers to a point which is less than 10% peak reverse current.
Reverse recovery time is a direct function of the forward
current prior to the application of reverse voltage.
For any given rectifier, recovery time is very circuit depend-
ent. Typical and maximum recovery time of alt Motorola fast IRMIREC)+------"L
recovery power rectifiers are rated under a fixed set of conditions
using IF = 1.0 A, VR = 30 V. In order to cover all circuit
conditions, curves are given for typical recovered stored charge From stored charge curves versus di/dt, recovery time (t rr )
versus commutation di/dt for various levels of forward current and peak reverse recovery current (IRMIREC)) can be closely
and for junction temperatures of 25°C, 750 C, 100o C, and approxi'mated using the following formulas:
ISo"C_
To use these curves, it is necessary to know the forward
current level just before commutation, the circuit commutation trr = 1.41 x [ -~
Q j 1/2
di/dt
di/dt, and the operating junction temperature. The reverse re·
covery test current waveform for all Motorola fast recovery
rectifiers is shown. 'RMIREC) = 1.41 x [QR x di/dt] 112
1-69
NOTE 3
A/
~
CASE TEMPERATURE
REFERENCE POINT
~
NYLON BUSHING
MICA W.ASHERS
560 195 .002
~ .276 , ' 9 0 ,
,286 .195
.041.
.051
--x-x-
.570 .200 .003
o FLATWASHER
~
o m
Steel, Electro-deposited zinc plate
.490
x
.215
m
.030
x .050
INSULATING HARDWARE KIT

AVAILABLE UPON REQUEST 10 195~ SOLDER TERMINAL
200 / Copper, Electro-deposited tin
10 065~ plate
095 .885 x .425 x .020
.915 .455 023
LOCK WASHER
~ $teel, Electro-deposited zinc
~ plate,lnternal tooth
.370 x .~ x .020
.381 .204 .025
NUT
~ 1018 Steel, Electro-deposited zinc
~ plate,10-32NF-2-8
.362 Nom. across flats

375
. ~ Thick ::~~ across points

7/16 STUD (MH 745)
CASE TO HEAT SINK THERMAL RESISTANCE

UNDER VARIOUS CONDITIONS:
Torque: 15 in-Ibs
1-70
1 N3889 thru 1N3893
MR1376
De!Sig'ner!S Data Sheet

FAST RECOVERY
POWER RECTIFIERS
STUD MOUNTED
FAST RECOVERY POWER RECTIFIERS 50-600 VOLTS
12 AMPERES
.. designed for special applications such as de power supplies, inverters,
supplies and free wheeling diodes. A complete line of fast recovery rectifiers

information presented. limit curves - representing boundaries on device character-
'MAXIMUM RATINGS
Rating Symbol lN3889 lN3B90 lN3891 lN3892 lN3893 MR1376 Unit
Peak Repetitive Reverse Voltage VRRM Volts
Working Peak Reverse Voltage VRWM 50 100 200 300 400 600
Non-Repetitive Peak Reverse VRSM 75 150 250 350 450 650 Volts
Voltage
RMS Reverse Voltage 35 70 140 210 280 420 Volts
Average Rectified Forward Amps
Current (Single phase, resistive 12
load, T C =' 100°C)
Non-Repetitive Peak Surge Amp
Current (Surge applied at 200
rated load conditions) (one cycle)
Operating Junction Temperature -65 to +150 °c

Range
Storage Temperature Range T stg -65 to +175 °c
Characteristics
Thermal Resistance, Junction to Case
'ELECTRICAL CHARACTERISTICS
Characleristic Symbol Min TyO M.. Unil "DimenSion isa diameter
I nstantaneous Forward Voltage vF Volts All JEOEC dimensions and notes apply
(IF =' 38 Amp, TJ = 1500 C) 1.2 1.5
Forward Voltage VF Volts CASE 568
(IF"" 12 Amp, TC = 25°C) 1.0 1.4
00·4
Reverse Current (rated dc voltage) TC-250C 'R 10 15 "A
TC = 100°C 0.5 1.0 mA
'REVERSE RECOVERY CHARACTERISTICS MECHANICAL CHARACTERISTICS

Characleristic Symbol Min Typ M.. Unil CASE: Welded, hermetically sealed
Reverse Recovery Time
OF = 1.0 Amp to VR = 30 Vdc, Figure l6}
t" FINISH: All external surfaces corrosion
ilFM = 36 Amp, di/dt = 25 AlilS, Figure 17)
Reverse Recovery Current
I 100
200
200
400
Amp
resistant and readily solderable
POLARITY: Cathode to Case
IRM{REC)!
(IF = 1.0 Amp to VR =30Vdc, Figure 16) - 2.0
WEIGHT: 5.6 grams (approximately)
"'Indicates JEOEC Registered Data for 1N3889 Series_
1-71
FIGURE 1 - FORWARD VOLTAGE FIGURE 2 - M'AXl'iI/IUMSURGE CAPABILITY

300 100 ...........
o ..... ~riort~ surgl" t~, ~8Ctij\ar) I I I.
....... is operated such that TJ = 150 o C;
--
200
.....- .....- i'
each cycle of surge.
0
100
TJ' 250;"- V .....- 0
70
50 ./
TJ'1500 C 0
" J'.",
li:
:;;
1/. 0-
1\ 1\ r'L
s.... 30
LV 0- 1-..---1..1 CYCLE
u
~
.,::::> 20 I
0
0 II I
J 1.0 2.0 3.0 5.0 10 20 30 50 100
~
~
~ 10 # NUMBER OF CYCLES AT 60 Hz
'"
::::>
~ 7.0
NOTE 1
FLIT
z
~ 5.0
I PPk Ppk
DUTY CYCLE, IJ '" Ip/t]
I
~ tp_ . PE.AKPDWER,Ppk,ispeakofan
~
.~ 3.0
I I------tl~
TIME
eqUlvalenl square power pulSt!:
To determiAe maximum junction temperature of the diode 10 a given situation,

2.0 Ihe tollowingprocedure is recommended.
The temperature 01 the case should be measured,uslOg a Ihermocoupleplaced
on the case at the temperature reference pOint (see Note 3). The thermal mass
connected to the case is normally large enough so Ihaillwili not significantly
1.0 respond to heat surges generated In the dlodeasa result of pulsed opera lion once
steady·stateconditionsareachfeved. Using the measured value 01 TC. thejun~tion
temperature may bedetermmed by:
0.7 TJ=TC+ TJC
where TJC is the increase m junction temperature above the "case temperature.
0.5 It maybe determined by
t, TJC = Ppk· ·ROJC [0 + 0- DJ . r(1j +tpJ +r(tp) . r(1111
where
0.3 r(l) '" normalized value of transient thermal resistance at time, t,from Figure
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3,i.e:
VF, INSTANTANEOUS FORWAilD VOLTAGE (VOLTS) r (Ij + tpJ" normalized lIalue of transient therm~1 resistance at lime II' Ip

1.0
~ 0.5
.... ::;
~:i 0.3
"''''
2 0 0.2
~~
.... w
w.,
-
~~ 0.1
t::~
t5 ~ 0.05 V
-;jet
'i::'~ 0.03
~ 0.02
....
• 0.0 1
0.001 0.002 0.005 0.D1 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10.000
t,TIME (m,)
1-72
20 20
-clPAc, T,vJ i LO~OS

r clpAc!TlVJ Lolos 6-
IIPK) = 20_T 1/ ./
- IIAV) -.......
V "- II / ./ /'
r- r- 1(PK)=20 I
I(AV)
17 V . / RESISTIVE-_ r- 2
10
1 1--
2.0-5.0 __
/
r--I. l/ ...... V'de
1.10
5.0
I~ V ./ './ INOUCTIVE
LOAD - r- lI- ~ /. V
rx /'1/V- / ./ ~
/ / %: V / ./ ~ V
~~ ./~ ~
~V ~ ~P"
o ~ 'flIP o , ~
o 2.0 4.0 6.0 8.0 10 12 14 o 2.0 4.0 6.0 8.0 10 12 14
IF(AV). AVERAGE FORWARO CURRENT (AMP) IFIAV). AVERAGE FORWARD CURRENT lAMP)

14 D:' 14 -
~ "f- ~ =:l I'\. de
.... 12 ~ RksISTIV~ LOAD .... 2=1
........ "-
'< ~
~ H --1
-"'" ................ '\."-
" .>..."
........ CAPACITIVE LOAOS
13
~
.. 8.0
10
F
F
I- ......... .........
..........
f"...>'
.........
I(PK)
-IIAV)
~_i-"""" 10
-50
F-
I--
I--
~
'"'
~
~
10
8. O-
-
-
.....,
r CAPACITIVE LOAD?:.- ~,
:> ~
I"\,
~
"
'-
I- I-
IIPK) = 2.0.5.0-
/ " ~, "\.
~ 6.0 F r-....-......:::..
__ 20 ~ 6.0 -
I--
.'" -- ...... ~"\.
I- f-IIAV) ,/"
w .......... ~
~
w
-j
'" f- 10
r--.... ~, ..........~
ffi 4.0 f-
I'--...~ .
~ 4. 0--1
'",,
> 20/ lo."
> f- -
'":;; 2.0 I-
~ :;; 2.0 --, 1
~ I- ""'"1"'- "
u:: -j
"'
o:--' 0:-,
o 80 90 100 110 120 130 140 150 80 90 100 110 120 130 140 150
TC. CASE TEMPERATURE 1°C) TC. CASE TEMPERATURE 10C)

101
I
~
N
:::;
== VR=100V
V
::i 100
'"o
!'O
I-
Z
~ 10- 1
/
w
'"
'"
::>
'w"'
~ f=~ '"'"~ V
10:- 2
'" 10 1 w
0:
t=F<; !E
,nO I I 10- 31 I I I
100 200 300 400 500 600 70 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR. REVERSE VOLTAGE (VOLTS) TJ.JUNCTION TEMPERATURE (OC)
1-73
FleURE1U -FORWARD RECOVERY TIME FIGURE 11 - JUNCTION CAPACITANCE .
~ 5. 01
w
~
7.o
0
I
I---
3.0 1 - - -
v~
!--tfr lIfr
TJ - 25 0 C
V ~
100
50
- ~
r-....
........ .....
.TJ = 25 0 C
~ 2.0 w
>
o
~ 1.0 ' " Vfr
V 1.1 V
<.>
~ -I'--
a: C3 30
o
a:
O.7 ;,:
~ O. 5 ;3
rJ 20
~ 0.3
..... I--"'"
---
~
,.. 0.2
O. 1 10
1.0 2.0 5.0 10 20 50 100 1.0 2.0 10 20 50 100
'F. FORWARD CURRENT (AMP) VR. REVERSE VOLTAGE. (VOLTS)

(See Note 21
FIGURE 12 - T J - 25°C FIGURE 13 - TJ = 75°C
1.0 1.0
.3
w 0.5
IfM
40 A
=20 A
3.
w
1.0 IfJ = 10 1
~ I 'v-" V ~ 40 A
«
13
~ o. 1
,/ V V .. ~ 0.5
~ ~ V"
./ /'
o ~ /" V ,/ ~
t;) 0. 1 ~
c>
0.2
~
",.-
~
a: '"w "'- ...... ~
~ 0.05 ~ O. 1
L'" lOA > lOA"
~ ~IP'~
~ "-
'\ 5.0 A,
§
a:: O.Q5 5.0 A
g 0:0
:~V '"
1.0 A-'
d ~~ 1.0 A
0.0
1.0
I 0.01
1.0
~ ~....-
1.0 5.0 20 50 100
2.0 5.0 10 10 50 100 10
dild! IAMP/",) dr/dt.IAMP/",)
FIGURE 14 - T J = 100°C FIGURE 15- TJ = 150°C
2. 0 1. 0
.3 1. 0
IfL 101~ ;'
.3 1. 0
IFM=JA V'"
w w
~ 40 A
'"a:
5 o.5 ~ O. 5
o ", ./ ,/
w '"a:w
a:
/ .0- "/'....- .7 ,,(V
~ 0.2
~ <'
,
~
~ O. 1
~ ts; P< '"

~ '"w
......
O. 1 ~ O. 1 '20 A
> >
8 lOA 10'A
~ 0.05
5.0 A
~_ 0.0 5
1.0 A
d
'" 0.01 ~~
~~
...... I\A
)
d
'" 0.0 1
'/h
~ P'"
1.0 1.0 5.0 10 10 50 100 1.0 1.0 5.0 10 10 50 100
di/dt. (AMP/",) di/dt IAMP/",)
1-74

RI 30n PRE-AMP, PSOOO PROBE OR EGUIVALENT
115 Vat 10 k
SO Hz ZW 3n 50W
Z5W NON-INDUCTIVE RI - ADJUSTED FOR L4nBETWEEN
POINT Z OF RELAY AND RECTIFIER
UNIT
INOUCTANCE~38~H
UNDER TEST
Rz - TEN-I W, 1011. 1% CARBON CORE
~----t<J) A IN PARALLEL
TA = Z5 ~I~ DC FO R RECTIFIER
Rz
In MINIMIZE ALL LEAD LENGTHS
lOW
30 Vdc NON-INDUCTIVE C, 1.0 Adc FROM CONSTANT VOLTAGE SUPPLY
CONSTANT VOLTAGE LO.F RIPPLE = 3 mVrms MAX
SUPPL Yo-:+_ _.....--.:.:..:.._ ___<~-----.3~00::...:..V....-__<O- Zout = II> n MAX, OC to Z kHz
RI
L1
di/dt ADJUST
RI = 50 Ohms T1
RZ = Z50 Ohms
01 = IN4723
02 = IN4001
03 = IN4933 Izo?tJvc TIZ 03 CI
IIPK) ADJUST
SCRI = MCR729-1O SO Hz I OUT.
CI =0_5to 50~F
CZ ~ 4000 ~F 1:1
OZ
L1 = 1.0 - Z1 ~H
TI = Variac Adjusts IIPK) and di/dt
TZ =1:1
CURRENT
VIEWING
RESISTOR
NOTE 2

di/dt
diode, passes thru zero going negatively until the reverse current
ent. Typical and maximum recovery time of all Motorola fast IRM(REC)+-----'''-
using IF = 1.0 A. VR = 30 V_ In order to cover all circuit
conditions, curves are given for typical recovered stored charge From stored charge curves versus di/dt, recovery time (trr)
versus commutation di/dt for various levels of forward current and peak reverse recovery current II RMIREC)) can be closely
and for junction temperatures of 2So C. 7So C. locPC. and approximated using the following formulas:
15o"C,
trr = 1,41 0
x [ _R_
~ 1/2
current level just before commutation, the circuit commutation
di/dt
di/dt, and the operating junction temperature. The reverse re-
rectifiers is shown. IRMIREC) = 1,41 x [OR x di/dtJ 112
1-75
NOTE 3
A
V CASE TEMPERATURE
REFERENCE POINT
~
NYLON BUSHING
M. leA W.ASHERS
560 195 ,002
~ .~ .286
x .190 x
.195
.041.
.051
.570 x .200 x .003
o FLAT WASHER
~
o
Steel, Electro-deposIted zinc plate
.490
~ x
.215
m
.030
x .050
INSULATING HARDWARE KIT

AVAILABLE UPON REQUEST 10 .195~ SOLDER TERMINAL
200 Copper. Electro-deposited tin
,065~ plate
10 .095 .885 x .425 x .020
.915 .455 .023
LOCK WASHER
~ Steel, Electro-deposited zinc
~ plate,lnternal tooth
.370 x .~ x ,020
.381 .204 025
NUT
~ 1018 Steel, Electro-deposited zinc
~ plate,10-32NF·2-B
.362 Nom. across flats
.375
.182 Thick .~ ilcrass points

.192 .433
7/16 STUD (MH 745)
CASE TO HEAT SINK

THERMAL RESISTANCE UNDER
VARIOUS CONDITIONS
TORQUE: 15IN·LBS
1-76
N3899 thru 1N3903
1
MR1386
Desig'ue.·s Data Sh~eet
FAST RECOVERY
POWER RECTIFIERS
STUD MOUNTED 50-600 VOLTS
.. designed for special applications such as dc power supplies, inverters,
Designers Data for "Worst Case" Conditions

"MAXIMUM RATINGS
Rating Symbol lN3899 lN3900 lN3901 lN39D2 lN3903 MR1386 Unit
Peak Repetitive Reverse Voltage VRRM Volts
Voltage
RMS Reverse Voltage VR(RMS 35· 70 140 210 280 420 Volts
Average Rectified Forward 10 Amp
Current (Single phase, resistive 20
load, TC = 100°C)
Non-Repetitive Peak Surge IFSM Amps
Current (surge applied at 250
rated load conditions) (one cycle)
Operating Junction Temperature TJ -65 to +150 0.115
Range if200l
Storage Temperature Range
"THERMAL CHARACTERISTICS
Tstg . -65 to +175
U
Characteristic o.o.. j f
MIN
"ELECTRICAL CHARACTERISTICS Tlrminal2
OIaracteristlc Symbol Min Tv. Mox Unit

Instantaneous Forward Voltage 'F Volts ·Oill1lnsionilldilmllll.
(IF "S3Amp, TJ'" 1500C) 1.2 1.5 All JEDEC dlman510nsand notes ilpply
Forward Voltage VF Volts
(IF'" 20 Amp, TC os 25°C) 1.1 1.4 CASE 257
""
Reversa Current (ratlld de voltage) T C '" 2SoC 'R 10 25 DO..
TC = 100"C 0 .• 1.0 mA
"REVERSE RECOVERY CHARACTERISTICS

Charactaristlc Symbol Min Tv. M,. Unit
evarse Recoverv Time
t" MECHANICAL CHARACTERISTICS
(IF" 1.0Amp to VR = 30 Vdc, Figura 16) 100 200
tlFM = 36 Amp, di/dt .. 25 A/lJ,s. Figure 17) 200 400 CASE: Welded, hermetically sealed
avarse "&Covarv Current IRMtREC) Amp
(IF" 1.0Amp to VR - 30 Vde, Figure·161 2.0 FINISH: All external surfaces corrosion
-Indlcatal JEDeC Re"lsterad Oata for 1N3899 SerUI,. resistant and readily solderable
POLARITY: Cathode to Ca..
WEIGHT: 17 Grams IAppro.imately)
1-77
FIGURE 1 - FORWARD VOLTAGE 'FIGURE 2- MAXIMUM SURGE CAPABILITY
500 100
I ".,... ............ I I II I I I I I
-
90 Prior to surge, the rectifier I I
300
I ,,/"
w-aD i"t-- is operated such thatTJ '" 150 oC;
200 TJ: 25°C V

V
V
...- ~~ 70
'-"
" tHJ.
each cycle of surge
L ./ ~-'~ 60
u,.';:::'
lll" I"-.. I.....!"-
100 / ~5110C ... '-"
o
z"'
w=>
u'"
",w
UJ 50
Or- J\ 1\ A I'"
70 ~c3 or--- 1--..-1-1 CYCLE
'/ 1:;
ii: V 0
~ 50
... 1/ 0 11111
ffi A o 11111
~ 0
II 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
G NUMSER OF CYCLES AT 60 Hz
~ 20
"
~ NOTE 1
f!
I
'"~
z
~
z
10
7.0
RJL tp__
PPk
I
Ppk
TIME
DUTY CYCLE, 0 '" tp/tl
PE~K POWER, Ppk, is peak of an
equivalent ~quare power pulse.
"
t; 5.0
~
1-'1-----<
To determine maximum junction temll-erature of the diode in a given sit':lation,
.~ the following procedure is recommended
3.0 The temperature of the case should be measured using a thermocouple placed
on the case at the temperature'reference point (see Note 3l. The thermal mass
connected to the case is normally large enough so that it will not significantly
2.0 respond to heat surges generated in the diode as a result of pulsed operation once
steady-state condilionsareachieved. Usiog the measured valu!lof TC, the junction
temperature may be det~rmined.by:
TJ"'TC+ 6TJC
1.0 where 6 TJC is the increase in junction temperature above the case temperature.
It may be determined by·
0.7 6:TJC=Ppk ·ROJC1 0 +{1-.01·r(tl+ 1pl+r(tpl-r(qll
where
0.5 rltl = normalized value of transienl thermal resistance al time, I, from Figure
o 0.4 O.S 1.2 1.6 2.0 2.4 2.S 3.2 3.6 4.0 3, i.e.:
r (t1 + tp) '" normalized value of transient thermal resistance at lime tl + tp
'F, INSTANTANEOUS FORWARO VOLTAGE IVOLTS)

1.0
....
!w"_ 0.5
:I:w
:: ~ 0.3
z"
~::iE
"'"'
z"
"z
~:; O. 1
W U
::::~
0.2
...... -- IS" Note 1)
--
~ ~0.05
""13 .......
~ 0::0.03
-E: 0.02
0.0 1
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10,000
t, TIME 1m,)
1-78

32 50
/ V V CAP1ClTlvJ LOADl
/
a: 2B V
~c - 24 - .I..
,---I(PK) • 20
I
/ V /
I
I(PK). 20
I(AV) "7
~5 20
I(AV)
10
V
/ / / /" 10
./ 1/
a:;I:
c-
... z
I
5.0
V / /' 5.0':)
F-. V ./
....
UJ Q
"';:
ffi!!::
16
w L / ~V V V ~ :/'"
>!:l
12
/ ~~ V V ...... ~ V de
-
~i5
..
;; B.O
"E ~ ~~
~ ~ ~ K'
~-
4.0
o~
~ o -~4.0
.........-:: I(AV)- 2.0
T I
o 4.0 B.O 12 16 20 o 8.0 12 16 20
IF(AV). AVERAGE FORWARD CURRENT (AMP) IF(AV). AVERAGE FORWARD CURRENT (AMP)
ii: 20 -1 20 r-
'"'
~
I- ....
--i !""'- RESISTI~OE:~OUCTIVE _
I h
H
""- ' \ . de
"\
ffi 16 - ffi 16 f-'
"-
a:
a:
:::>
'"
~ 12
=
-
51
10-
·r
"
""
""'-
a:
a:
:::>
..
'"
:il 12 H
f-
2.0+ 5;--"
I
"'-""
..........
'\.
'\.
'-~ \.
~
~
w 8.0
'"ffi
=
-
-j
r-
-
I(PK)=20
-i(AV)
-
-CAPACITIVE LOADS
J.
.............
.........
""
""-""'" ~
-.........: r-...~
~
~
w
'"w~
8.0 f -
f-
'-
I(AV)
lO
I(PK) = ~O
I
CAPACITIVE LOADS
'-:": ~.
-&
",
~~
I
::: 4.0
0
.....,
-
,.....,
o BO 90 100 110 120
~~
~
130 140
, 150
~
I
4.0 H
o' -
o
H
80 90 100 110 120 130 140 150
TC. CASE TEMPERATURE (DC) TC. CASE TEMPERATURE (DC)
FIGURE B - TYPICAL REVERSE CURRENT FIGURE 9 - NORMALIZED REVERSE CURRENT

10 1
I==t= VR - 100 V
"I V 1
~
a:
:::>
1 ./ I
'"
w
'"w
a:
>
w
a:
2 V 1
IE
10- 31 1 1 1
20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR. REVERSE VOLTAGE (VOLTS) TJ. JUNCTION TEMPERATURE (DC)
1-79

RI 30n PRE·AMP, PSOOO PROBE OR EClUIVALENT
115 Vac 10 k
60 Hz 2W 30 50W
25W NON·INOUCTIVE Rl - ADJUSTED FOR 1.40 BETWEEN
POINT 2 OF RELAY AND RECTIFIER
UNIT INDUCTANCE ~ 38 pH
UNDER TEST
R2 - TEN·I W,.lO n.
1% CARBON CORE
IN PARALLEL
TA· 25 ~l~oC FOR RECTIFIER

R2
10 MINIMIZE ALL LEAD LENGTHS
lOW
30 Vdc NON.INOUCTIVE
Cl 1.0 Adc FROM CONSTANT VOLTAGE SUPPLY
CONSTANT VOLTAGE 1.0.F RIPPLE = 3 mVrms MAX
SUPPLY 0-+_ _....._ _ _ _ _......-----.3-0-0_V...._ _ o- Zout = 1\> 0 MAX, DC to 2 kHz

Rl
L1
Rl = 50 Ohms di/dt ADJUST
T1
R2 = 250 Ohms
120V~C
01 = 1N4723
02 = 1N4001
03 = 1N4933 ,T2, 03 Cl
60 Hz I(PKI ADJUST om:
SCRl = MCR729·10
Cl =O.5t050pF
C2" 4000 pF 1:1
L1=1.0-27pH 02
T1 = Variac Adjusts I(PK) and di/dt
T2 = 1:1
CURRENT
VIEWING
RESISTOR
NOTE 2

di/dt
time that the current. thru a previously forward biased rectifier
Aeverse recovery time is a direct function of the forward
For any given rectifier, recovery time is very circuit depend w
ent. Typical and maximu"m recovery time of all Motorola fast IRM(REC)+----'IL
using IF = 1.0 A, VR = 30 V. In order to cOver all circuit
conditions. curves are given for typical recovered stored charge From stored charge curves versus di/dt, recovery time hrr )
versus commutation di/dt for various levels of forward current and peak reverse recovery current (I RM(RECII can be 'cLosely
and for junction temperatures of 25°C, 75°C, 10o"C, and approximated using the following formulas:
15o"C.
To use these curves, it is necessary to know the forward 0 ~ 1/2
current level just before commutation, the circuit commutation trr = 1.41 x [ _R_
dildt
di/dt. and the operating junction temperature. The reverse re-
rectifiers is shown. IRM(RECI = 1.41. x [ OR x dildt] 112
1-80
FIGURE 10 - FORWARD RECOVERY TIME FIGURE 11 - JUNCTION CAPACITANCE

10 20 0 I
7.0 I TJ = 25°C
j 5.0 I
r----- v~
w u.
or---
-
~ 3.0 r----- I-tfr IIfr .e I-.
~ ~ 10
~ 2.0 z
w ~
> V U 70
8w 1.0 VIr 1.1 V ;:: r- ....
'"~ 0.7
;3
z 50
TJ = 25°C
'" 0.5 o
;;:
'"
~ 0.3
tz
...... f-"'" ~ 30
=- 0.2 oj
~
O. 1 20
1.0 2.0 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100
IF. FORWARO CURRENT (AMP) VR. REVERSE VOLTAGE (VOLTS)

(See Not. 2)
FIGURE 12 - TJ = 25°C FIGURE 13 - T J = 75°C
1.0 2.0
3
UoI 0.5
IFM = 20 A
40 A .3 1.0
I
IFM -201
~ './ \ ~ 40A
'"i3 /' ./
./ ./~
'"i3 0.5
~ o. 2
~ ;:;::
/" //
'"o ./ C?: 7
t;; O. 1
*~
0
i;; 0.2
0 t> /'
~
...... ""' ....

*~
~ 0.05
~ ~ ......
~~
"'\ 5.0 A
lOA
i
0.1
0.05
'-....
5.0 A
lOA
g 0.02
0.0 1~
V l.0j "'
CJ
0.02 ~~
~
......
1.0 A
1.0 2.0 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100

di/dt (AMP/~sl di/dt. IAMP/~s)
STORED CHARGE DATA
FIGURE 14 - T J = 1QOoC FIGURE 15 - T J • 150°C

2. 0 2. 0
3. 1. 0
IF~ = 20lA Y
.3 1. 0
IFM=4JA I/l-'
w w
~ 40 A '"
~ O. 5 '"~ O. 5
u
V ./ /' /
:i:!
t;'"
o
w
ffi
O. 2
O. 1 ~k
/ J/: .//
I.--~
*
~ O. 2
O. 1
.~
/
~ P<
~ ../
~OA:-
I.-
>
*w
>
lOA 10 A
8 §cr::
~ 0.05 /. 5.0 A
0.05
LOA
/.....:
CJ
"' 0.0 2 ~ t::::-""
~~
I\A "'
CJ
0.0 2 ~ ~
1.0 2.0 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100
di/dt. (AMP/~s) di/dt (AMP/~s)
1-81
INSULATING HARDWARE KIT AVAILABLE UPON REQUEST
-- x
,
MICA WASHERS
,997 ,255 ,004
x-
~. ~",,"m",,",
REFERENCE POINT
..
1.003 .265 .006
~">'.ON
(ST;;~ x~;: x~;~
BUSHIN'G
o
@f
a
FLATWASHER
Steel. Electro-deposited
Zinc plate
.727 )( .276 )( .055
,749 ,296 .071
.160
Mrl-j ~
SOLOER TERMINAL
t::t Copper, electro-tinned
(AMP #341241
.437 I HOLE OIA .
.085 MIN r .2651-.005

LOCK WA'SHER
MIN. ,625 MAX.-j·
~ Steel. spring, Electro-deposited
L ~ Zinc plate, Internal tooth
.460
_ x _ ) ( .017
,250 _
,480 .270 ,027
~ ~~~ Steel" Electro-deposited

Zinc p'late
%-28 '\fF·28
'
.425 across flats x ".178" Thick

,437 ,193
11/16 STUD (MH 746)

::~: across points
CASE TO HEAT SINK

VARIOUS CONDITIONS
1-82
N3909 thru 1N3913
1
MR1396
FAST RECOVERY
POWER RECTIFIERS
STUD MOUNTED 50-600 VOLTS
... designed for special applications such as dc power supplies, inverters,
'having typical recovery time of 100 nanoseconds providing high efficiency
Designer's Data for 'Worst Case" Conditions
'MAXIMUM RATINGS
Rating Symbol lN3909 lN3910 lN3911 lN3912 lN3913 MR1'" Unit
Peak Repetitive Reverse Voltage VRAM Volts
DC Blocking Voltage VA
Voltage
AMS Reverse Voltage VAtRMs) 35 70 140 210 280 420 Volts
Average Rectified Forward '0 Amps
Current (Single phase, 30
resistive Joad, Tc = 1000CI
Non-Repetitive Peak Surge IFSM Amp
Current (surge applied at rate 300
load conditions)
QperatingJunction Temperature TJ -65 to +150 °e
Range
Storage Temperatur.e Range T sts -65 to +175 °e
O.060J- ffig"
THERMAL CHARACTERISTICS MIN 1/4-28 UNF.2A
Charaeteristic
Tlrminal2
'ELECTRICAL CHARACTERISTICS
"Dim'rllioni5adiametar.
Characteristk: Symbol Min Typ Ma. Unit
AIIJEOECdimansionsimdnOl.sapplv
Instantaneous Forward Voltage 'F 1.2 1.6 Volts
OF = 93 Amp, TJ;: lSOOC)
CASE 257
Forward VOltage VF 1.1 1.' Volts 00..
(IF = 30 Amp, TC '" 25 0 C)
Reverse Current (rated de voltage) TC = 25 C 'A 10 25 "A
Te = l00Pe 0.5 1.0 mA
'REVERSE RECOVERY CHARACTERISTICS

Characteristic Symbol Min TVI' Max Unit MECHANICAL CHARACTERISTICS
Reverse Recovery Time t"
OF = 1,OAmp to VR ;:30Vdc, Figure 16) 100 200
CASE: Welded, hermetically sealed
(lFM" 36 Amp, diJdt;: 25 A/p.s, Figure 171 200 400 FINISH: All external surfaces corrosion
Reverse Recovery Current IRM(REC) 1.5 2.0 Amp
OF ;: 1.0 Amp to VR ;: 30 Vdc, F"igure 16)
resistant and readily solderable
• Indicates JEDEC Aagistered Data for lN3909 Saries.

POLARITY: Cathode to Ca..
WEIGHT: 17 Grams (Approximately)
1-83
FIGURE 1 - FORWARD VOLTAGE FIGURE 2 - MAXIMUMSURGE CAPABILITY

100
500
y
..... V ~ri~ris It:D!lerated
TJ' 25 ac I"""'-
V 90 'Urg'\h' :"t:ti.: I oI
30 0
/' ........, / .... such that TJ 150 C;
VA RM may be applied between
=
/' 150a C i' each Cycle of Surge.

20 0
1/ v 0 'NJ
/, V III"r-.
100
0
III
O~
o~
0
!\
~ICYCLE
!\ (\
1'1"'-
-
t-
0
0 11111
~ I o lW1
:5<.> 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
NUMBER OF CYCLES AT 60 Hz
~ /I
« 0
~
~ NOTE 1
'"::>
:il
2
«
....z
«
~
~
0
7. 0
5.0
FLlL Ip_
1---,,-----1
Pk
.
Ppk
.
TIME
DUTY CYCLE, 0 = tp/q
PEAK POWER, Ppk. is peak of an
equivalent square power pulse.
.~
Todeterminemaximum junction temperature of the diode in a given situation,
the following procedure is recommended:
3. 0
The temperature of the case should be measured using athermocoupl eplaced
on the case at the temperature reference point (see Note 3), The thermal mass
2.0 connected to the case is normally large enough so that 'it will not significantly
respond to heatwl1lesgenerated in thediodeasa result Qf pulsed operationonce
steady-state conditions are achieved. Using the measured value of TC. the junction
temperature may be determined by:
TJ=TC'L"ITJC
1. 0
where·\TJC is the increase in junction temperature above the case temperatur e.
It may be determined by:
o.7 /), TJC =Ppk 'ROJC {O+ (l-DI . rtq +tp)+r(tp) -r(q}j
where
O. 5 dtl" normalized value of transient thermal resi$lance at time, t, from Figure
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 3. i.e.: .
r (t] +tpl '" normalized value of transient thermal resistance at time t,+tp.
VF,INSTANTANEOUS FORWARO VOLTAGE (VOLTS)
1.0
-'
«
:;;
ffi- 0.5
i= ~ .-
---
0.3
~~
Vi ~ 0.2
(SEE NOTE 1)
~~
.... LU 0.1
........ 1--
W<.>
-
>2
§ ~ 0.05
"-'"
"-w
UJ a:: 0.03
-E 0.02 t...---
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10,000
t, TtME (m,1
1-84

50 50
r-------~APACITivE LOAbs
CAPACITIVE LOADS
r------- IlPK) , f---'.'!!'!<.I~2;
f---
-~20
IIAV)
/ / V V IIAV)
10 L / / ~
'10 /
// 5.0
II V V / ./'"
5.0
./ / 2.0 / / / ./ , / de
/ / V/ / V V/ ~
// ~V V/ V ~ --
/. V~ V /. V~ V
~ f:Y' RESISTIVE INDUCTIVE LOAD
.i-0::V
~
",
o ~
o 4.0 8.0 12 16 20 24 28 32 4.0 B.O 12 16 20 24 28 32
IFIAV), AVERAGE FORWARD CURRENT lAMP) IFIAV), AVERAGE FORWARD CURRENT lAMP)
0:
32 0: 32 r-
"
:s :s" F; " ' - de
~ "'-
I-
~ 24 a:~ 24
r
""" ~
'"
CAPACITIVE
'"
G =>
~
'-'
o h f-t-LOAOS-"
~ ~,
'" IIPK) ~ 2.0.5.0
<t:
~ 16
<t:
~ 16 r---" t-+IIAV) r--'- r"
~
5: ~
0
w w f--
I 10 I --
'" '"~ I ! 20 .~
g 8.0 ~ 8.0 f- f- -
r-- ---t-- - _ .. _-
~
~
'"
<t: <t:
:> :> H - -f---
<t:
<t:
u:: u:: !
o 0- I
o 80 90 100 110 120 130 140 150
TC, CASE TEMPERATURE 1°C) TC. CASE TEMPERATURE 1°C)
10 I
FTJ 150°C
r-- rl250C = VR~IOOV
./'
~ 10 3 0
I-
tii
'"
=== 100°C
i
'"
=>
10
2 75°C I L'
~
r:i:. 10 I
== = 50°C
2 V
== '::: 25°C
10 0 I 10- 3
o 100 200 300 400 500 600 700 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR, REVERSE VOLTAGE IVOLTS) TJ, JUNCTION TEMPERATURE 1°C)
1- 85
FIGURE 10 - FORWARD RECOVERY TIME FIGURE 11 - JUNCTION CAPACITANCE
1
w
~
10
7.0
5.0
3.0
=
===
-
-
u~
~tfr vtr
TJ ~ 25 0 C
,/
10 0
0
-- r-...
TJ~250C
E 2. 0 ...........
r-...
>
~ 1.0
VVir 1.1 V
-r--.
0
~ 0.7
~
~
'"
0.5
0.3
0.2
o. 1
1.0-- -2.0
.-
5.0 10 20
IF, FORWARO CURRENT (AMPI
50 100
0
10
1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTSI
50 100

(See Note 21
FIGURE 12 - TJ = 25°C FIGURE 13 - T J = 75°C
1.0 2.0
3
UJ 0.5
IFM
40 A
20 A
::t 1.0 'FMI~201
~ I'v-" V '"'" 40 A
'"
G / .....-V V ... g 0.5
~ 0.2 .....-
~ ~ V-
o ./
o
t; o. I '"~ 0.2
/' V- / ' I--'
~ ~ "> ...... 1--'
8 o /'
w
'"
~ 0.05 ......- 10 A '"w I
to A
~ ~r::::: '\ i'. §
~ iP ~
g 0.02
0.0 1~ V--
'"
1.0 I 5.0 A cc
d '"
0.05
002
0
~ ::::::
..., 1.0 A
50A-tT
1.0 2.0 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100

di/dl {AMpi/-lS) diJdt, (AMP/ps)
FIGURE 14 - T J = 100°C FIGURE 15 - T J = 150°C

2. 0 20
3. 1. 0
IF~ ~ 20lA ]. 1,0
IFM ~ 4J A l.-/
w w
40 A --
'"
'"
'"
G
5 g'"'" 0.5
,/ V / /
~ V k-" ~
~ o. 2
L 0 ~ 0.2
/' ~ ./
~ <: V . . . ~ YP<
I-'
8 ~ 1')0 A
'"w> 1 O. I
;:;
~ 0.0 5
10 A .
§ 10 A
oC
./. 5.0 A -i cc
oC
0.0 5
1.0 A
/~ ~
d ~ ;..-'
..., 1\0 A .1 d
0.0 2 ~~ 0.0 2 ~ f?'

1.0 2.0 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100
di/dt, (AMP/~sl di/dt (AMP/~sl
1-86
1N3909 thru 1N3913. MR1396 (continued)

115 Vac 10 k RI 30n PRE·AMP, P6000 PROBE OR EUUIVALENT
60 Hz 2W 3n SOW
25W NON·INDUCTIVE R1 - ADJUSTED FOR 1.4nBETWEEN
POINT 2 OF RELAY AND RECTIFIER
UNIT
INDUCTANCE ~ 38 ~H
UNDER TEST
R2 - TEN·1 W, 10 n.
1% CARBON CORE
A IN PARALLEL
TA' 25 ~1~oC FOR RECTIFIER

R2
1n MINIMIZE ALL LEAD LENGTHS
lOW
30 Vd, C1 NON.INOUCTIVE
1.0 Ad, FROM CONSTANT VOLTAGE SUPPLY
CONSTANT VOLTAGE 1.0l'F RIPPLE' 3 mVrmsMAX
..
SUPPL Y e-:+__....____---<~----- 3-00-V4_-__<D- Zout' 1l> n MAX, DC to 2 kHz

R1
L1
di/dt ADJUST
R1 = 50 Ohms T1
R2' 250 Ohms
120~VC
01 = 1N4723
02·1 N4001
03 = 1N4933 IT21 03 C1
60 Hz I (PKI ADJUST om:
SCR1 • MCR729·10
C1 =0.5 to 50l'F
C2 ~ 4000 ~F 1,1
02
L1 • 1.0 - 27 I'H
T1 = Variac Adjusts I(PK) and di/dr
T2 = 1,1
T3 = 1:1 (to triyger circuit) 01
CURRENT
VIEWING
RESISTOR
NOTE 2

For any given rectifier. recovery time is very circuit depend-
ent. Typical and maximum reoovery time of all Motorola fast
0'
recovery power rectifiers are rated under a fixed set conditions
using IF = 1.0 A, VR = 30 V. In order to coverall circuit
conditions. curves are given for typical recovered stored charge From stored charge curves versus di/dt. recovery time (trr)
versus commutation di/dt for various levels of forward current and peak reve..e recovery current Ii RM(RECII can be closely
and for junction temperatures of 2SoC, 7SoC. 100"C, and approx.imated using the following formulas:
ISo"C.
To use these curves. it is necessary to know the forward
current level just before commutation, the circuit commutation trr = 1.41 [ OJ 1/2
x _R_
di/dt
di/dt. and the operating junction temperature. The reverse re-
rectifiers is shown. IRM(RECI = 1.41 x [OR x di/dt] 112
1-87
INSULATING HARDWARE KIT AVAILABLE UPON REQUEST
MICA WASHERS
.997
--X--x
1.003
.255
.265
.004
.006
~ CASE TEMPERATURE
REFERENCE POINT
~@/o
o NYLON BUSHING
~ x .264 x .060
.372 .274 .070
o
FLAT WASHER
~ Steel, Electro-deposited
~ Zinc plate
.727 .276 .055
-x - x -
.749 .296 .071
~
SOLDER TERMINAL
.160
~ Copper, electro-tinned
MAX.
(AMP #341241
HOLE OIA.
LOCK WASHER .265 ± .005
~ Steel. spring, Electro-deposited
~ Zinc plate, Internal tooth
.460
- x .250
_ x.017
_
.480 .270 .027
NUT
~ ' 1018 Steel, Elp.ctro-deposited

Zinc plate
%-28 NF·2B
:;~ moss flat" • ~~~ Thick

.485
11/16 STUD (MH 746) .505 acmss points
CASE TO HEAT SINK

VARIOUS CONDITIONS
TORQUE: 25IN-LBS
1-88
1 N3993 thru 1N4000 (ZENER DIODES)
Low-voltage, alloy-junction zener diodes in hermeti-

cally sealed package with cathode connected to case.
CASE 56 Supplied with mounting hardware.
\00-4)
MAXIMUM RATINGS
D C Power Dissipation: 10 Watts. (Derate 83.3 mW;oC above 55°C).
The type numbers shown in the table have a standard tolerance on the nominal
zener voltage of ±10%. A standard tolerance of ±5% on individual units is also
available and is indicated by suffixing "A" to the standard type number.
(TB = 30°C ± 3, Vf = l.5 max @ IF = 2 amp for all units)
Nominal Reverse
Zener Voltage Test Max Zener Impedance Max DC Zener leakage Current
V,@I" Current Current
Type No. Volts I" Z"@I,, Z.. @I.. = 1.0 mA I," mA I. V.
mA Ohms Ohms )J.A Volts
IN3993 3.9 640 2.0 400 2380 100 O. 5
IN3994 4.3 580 1.5 400 2130 100 0.5
IN3995 4.7 530 1.2 500 1940 50 1.0
IN3996 5.1 490 1.1 550 1780 10 1.0
IN3997 5.6 445 1.0 600 1620 10 1.0

IN3998 6.2 405 1.1 750 1460 10 2.0
IN3999 6.8 370 1.2 500 1330 10 2.0
IN4000 7.5 335 1.3 250 1210 10 3.0
SPECI AL SELECTIONS AVAI LABLE I NCLUOE: (See Selector Guide for details)
(A) NOMINAL ZENER VOLTAGES BETWEEN THE

TOLERANCES:
To designate units with zener voltages other than
those assigned JEDEC numbers and/or tight voltage
tolerances (±3%, ±2%, ±I %), the Motorola type
number should be used.
10 M 5.0 A Z 3
DJice JM
Motorola
*Code:
5,~olts
J,A z± 5
Alloy
erJ
Description (each device) Diodes
Tolerance
per device (±5%)
1B orall
Tolerance
of set
(± 1%)
Code*
(omit for ±20% units) (A-Not used)
B - Two devices in series
DLce Molola NoJinal
Description Voltage Alloy Diode
T
zler ToJance
(±%)
C - Three devices in'series
D - Four devices in series
Example: lOM5.IAZ5BI
Example: IOMS.OAZ3 (C) ZENER CLIPPERS: (Standard Tolerance ±10% and
±S%).
(B) MATCHED SETS: (Standard Tolerances are ±S.O%, Special clipper diodes with opposing Zener
±2.0%, ±l.O%). junctions built into the device are available by using
Zener diodes can be obtained in sets consisting the following nomenclature:
of two or more matched devices. Tke method for 10
specifying such matched sets is similar to the one
1
described in (A) for specifying units with a special
voltage and/or tolerance except that two extra TJM
Device T J AZener
Nominal fJZ
suffixes are added to the code number described. Description Voltage Diodes
These units are marked with code letters to Motorola Alloy Qipper
in a set is marked with the same serial number, the two Zener voltages
Example: IOM4.7 AZZIO ment)
1-89
N400 1thru 1N4007
1
Surmetic rectifiers, subminiature size, axial lead

mounted rectifiers for general purpose low-power ap-
CASE 59 plications.
(00-41)
MAXIMUM RATINGS
Rating Symbol
-
0
0
"I:t
0
0
8
('oj
"I:t
M
0
~
"I:t
0
0
"I:t
I.t'I
0
0
"I:t
0
"I:t
......
0
0
"I:t Unit
Peak Repetitive Reverse Voltage VRM(rep)

- - - - - -
Z Z Z Z Z Z
....
Z
Working Peak Reverse Voltage VRM(wkg) 50 100 200 400 600 800 1000 Volts

75 150 300 600 900 1200 1500 Volts
(halfwave, single phase, 60 Hz peak) VRM(non-rep)
RMS Reverse Voltage V 35 70 140 280 420 560 700 Volts

r
Average Rectified Forward Current
(single phase, reSistive load, 10 1.0 Amp
60 Hz, see Figure 6, T A = 75°C)
Non-Repetitive Peak Surge Current

(surge applied at rated load IFM(surge) 30 (for 1 cycle) Amp
conditions, see Figure 2)
Operating and Storage Junction °c

T J , Tstg -65 to +175
Temperature Range
Characteristic and Conditions Symbol Max Unit
Maximum Instantaneous Forward Voltage Drop VF Volts
(iF = 1. 0 Amp, T J = 25°C) Figure 1 1.1
Maximum Full-Cycle Average Forward Voltage Drop VF(AV) Volts

(10 = 1. 0 Amp, T L = 7SoC. 1 inch leads) 0.8
Maximum Reverse Current (rated dc voltage) T J = 25°C IR 0.01 mA

T J = 100°C 0.05
Maximum Full-Cycle Average Reverse Current IR(AV) mA

(10 = 1. 0 Amp. T L = 75°C. 1 inch leads) 0.03
CASE: Void free, Transfer Molded
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 350°C, %" from
case for 10 seconds at 5 Ibs. tension
FINISH: All external surfaces are corrosion-resistant. leads are readily solderable
POLARITY: Cathode indicated by color band
WEIGHT: 0.40 Grams (approximately)
FIGURE 1- FORWARD VOLTAGE FIGURE 2-MAXIMUM SURGE CAPABILITY

a ..... a
~ ,.ii:5 10 I'---
I-- [ \ [ \ C\
a V +-
J...-' ......
01--
a
TJ" 25°C J...-' ~
z
~
I-- 1----+-1 CYCLE
./ V ~ 0_ SURGE APPLIED AT NO
=>
<.> t-. LOAD CONDITIONS
a 1/ ./ ~ r- t- V'''I",I APPLIED AFTER SURGE
~ 30 ......... TJ O~ 25°C
7. a :.i!
5. a in l' ~
a
3. a III t-,..
ii:
~ 2. a
TYP ICALI MAXIMUM SURGE APPLIED AT RATED
LOAD CONDITIONS t'--..... .......
;:, 0== V... I,,,( APPLIED AFTER SURGE
ffi a
~ 1.
I J 7. a
- TJ 17SOC
~ O. 7 5. a
~ o. 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
~ o. 3 NUMBER OF CYCLES AT 60 Hz
i
'"
o. 2
FIGURE 3-FORWARO VOLTAGE TEMPERATURE COEFFICIENT
~ o. 1 4. 5
~ 0.0 7 4. 0
..!f. 0.0 5 3. 5
3. 0
0.03
P 2. 5
0.02
~ 2. 0
1/
ffi 1. 5
0.0 1 U 1. a
YPICAL RANGE
0.00 7 ~ o. 5
0.005 8 0
-0. 5
0.00 3 -1. a I-'
0.002 -1 .5
-2 .0
0.00 1 -2. 5
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0.001 0.0050.01 0.05 0.1 0.5 1.0 5.0 10 50
Vf, INSTANTANEOUS FORWARD VOLTAGE IVOLTI iF, INSTANTANEOUS FORWARD CURRENT lAMP)
FIGURE 4- TYPICAL TRANSIENT THERMAL RESISTANCE

~
~ 1 i
--
I--- t- L L I -L I"
~
I---
r--
~ ::::- L 112"
0
a
- .....
~
L 1132"
1~
a
~
-- b--'"
3.0 5.0 7.0 10 20 30 50 70 100 200 300 SOD 700 1000 2000 3000 5000 7000 10k 20k 30 k
PW, PULSE WIDTH 1m,)
FOR IIJl(tl VALUES AT PULSE W)DTHS LESS THAN 3.0 ms, THE ABOVE CURVE
CAN BE EXTRAPOLATED DOWN TO 10 ItS AT A CONTINUING SLOPE OF 1/2
1-91
CURRENT DERATING DATA
FIGURE 5-LEAD TEMPERATURE DERATING (DC ONLY) FIGURE 6- RESISTlVE,INDUCTIVE LOADS

8.0 4. 0
0::
'"
:5
r--.... ....
............
0::
'"
:5
l5
s.o r-...
~~1!3r
l5
~
!
3. 0-....
'"r---..
r-... ..........
r--..... L ~ 1!32"
I~SOHz
~
=>
'-' 4.0 "k
r---. r--...... L~ 3)8" ...... "'- ~ 2. 0"""'-
-r-- ~~3/~
"" " ~'"

Q
~
r-....L~ 1"
~
! r-- I'"' r- r--
L~ 'ISEE ~oITii
r-t=: "'- -.... " ~, ,,\

~
r--
--
...........
-" 2.0 L0
........... ~ 1.2 ............. ............
r-::::: ~ 0
N ~
SO 80 100 120 140 ISO 180 200 20 40 SO 80 100 120 140 ISO 180 200
Te. LEAD TEMPERATURE lOCI Te. LEAD TEMPERATURE lOCI
FIGURE 7- CAPACITIVE LOADS NOTES

2.0
NOTE 1
Data shown for thermal resistance junction-to-ambient (BJA) for the mountings
1 ~ SO Hz shown is to be used as typical guideline values for preliminary engineering or in
1-0" case the tie point temperature cannot be measured.
r- ::::--- .......... I, ~ lOx 11.. ,1

/r~~ 1!32"
TYPICAL VALUES FOR HJA IN STILL AIR
iL-j r L1 "
-
.............
~ ::--...... 'rL~I"
VnlnU~)Ilm
1b--L-l-f-L-dr
:::::: :::- ......... JI-TERMINAL STRIP -l ~
~ t-...... P.C. BOARD
rr-: ::::-"-
,
......... MOUNTING METHOD 1 MOUNTING METHOD 2
-l~ 1!32':':;
I ~ MOUNTING LEAD LENGTH. LIIN.I
......... I
IL~ 1"
I, ~ 20 x 11 ..,1
~~ METHOD 1/32
- I
3/8
75 I
1
85
fiJA
°C/W
55 I 72 I 85 °CIW
0 "Using Mounting Method 1 or 2 with L = I"' the curve marked" in Figure
20 40 SO 80 100 120 140 ISO 180 200
6 can be used for 60 Hz half·wave resistive/inductive load (Rating vs.
Ambient Temperature). The abscissa of Figure 6 then indicates TA in ·C.
Te. LEAD TEMPERATURE lOCI
NOTE 2
80
FIGURE 8- STEADY·STATE THERMAL RESISTANCE nP"
-.J-t,~
nP"L DUTY CYCLE. 0 ~ t,lt l
PEAK POWER, P,b i. peak 01 a.
~tl----l TIME
70
To determine maximum junction temperature of the diode in a
given situation. the following procedure is recommended:
SO
0 / .;::::.- The temperature of the lead should be measured using a thermocouple placed
on the lead as close as possible to the tie point. The thermal mass connected to
i-"'" the tie point is normally large enough so that it will not signilicantly respond to
0
MAXIMUM
/. -:/ heat surges generated in the diode as a result of pulsed operation once steady.
/ -:;:; ~PICAL state conditions are achieved. Using the measured value of Tl. the junction
temperature may be determined by,
0
0.....-:: /
/. :;::; V TJ = Tl + .6TJl'.
where 6. TJl is the increase in junction temperature above the lead temperature.
It may be determined by,
O/'"
6 TJl ~ P" [ RJll~1 • 0 + II - 01· RJlltl + tpl + RJLlt,1 - fiJlI1II]
0
I" where HJl(t)
8J L(t l +t p )
= value of transient thermal resistance at time 1 i.e.:
= value of OJl{tl at time tl +tp
L. LEAD LENGTH IINCHESI
BJlltp) = value of 8Jllt) at end of pulse width tp
8J l[t 11 = value of 6Jlltl at time tl
1-92
FIGURE 9- FORWARD RECOVERY TIME FIGURE 10- REVERSE RECOVERY TIME
--s
2. 0 20
TJ ~ 25°C
10
O. 7t--
r---
~
r---
4}1
tfrJh
L-I II
3-
'";:::
10
7.0
0 i'.,
0
t-teJ
/ ~
~50C
~
5 5.0 TI
1/ ~ oJ1 < I, v~ 1b A~~
V f':';, ~ 10V >
~
'-....
O. 3 > 3.0
i-" ......
J..--' ~
0.2
~ ~-20V - 2.0
...... '"
o1 10
0.1 0.2 0.3 0.5 0.7 10 2.0 3.0 5.0 7.0 lO 0.1 0.2 03 0.5 0.7 10 20 3.0 5.0 7.0 10
I" fORWARD CURRENT IAMPI IRiI" DRIVE CURRENT RATIO
FIGURE 11- RECTIFICATION WAVEFORM EFFICIENCY FIGURE 12-JUNCTION CAPACITANCE

10 100
~ 70
kN1 f - r- .,
DATA NORMALIZED TJ 25°C
~
O. 7
TOI1~ l ,U
I~
50
r MEASURED DATA I' 30

O. 5
0.4
I I ITIft::::: r.:::- TJ ~ 175°C
>.-.. ~ 20 >-
03
-
I I Lilli
CURRENT INPUT WAVEFORM
f':::: ~
"'<:I ;:,o..~
I'- we
.,'"
:'\
lE
;'0
~
10
7.0
--
5.0
0.2 -
-
J\I'v- r-..
~
<.S
3.0
O. 1
J1J1---- ~
2.0
10
10 2.0 3.0 50 7.0 10 20 30 50 70 100 200 0.1 0.2 03 0.50.7 10 2030 507.010 20 30 50 70 100
REPETITION FREQUENCY IkHzl VR, REVERSE VOLTAGE IVOLTI
RECTIFIER EFFICIENCY NOTE
FIGURE 13 - SINGLE·PHASE HALF·WAVE RECTIFIER CIRCUIT V'm

IT'R l • 4
100 % - IT'
u(sine) • 100% - 40.6% 121
V'm
~ V'm
For a square wave input of amplitude Vm •
CT(square)
mc
-·100% 50% 131
the effiCiency factor becomes: V'm
Rc
(A full wave Clrcuil has tWice these efficiencies)
The rectification effiCiency factor a shown in Figure 11 was calculated using the
formula: As the frequency of the input signal is increased. the reverse recovery time of the diode
lFigure 10) becomes significant. resulting in an increasing ac voltage component across
V'oldcl
RL which is oppOSite in polarity to the forward current. thereby reducing the value of the
Pdc -~ V'oldcl efficiency factor 0". as shown on Figure II.
(J =.- ~ = V20 lrmsl • 100% - V'olacl- V~· 100% III
It should be emphasized that Figure 11 shows waveform efficiency onlYi it does not
-~ provide a measure of diode losses. Oata was obtained by measuring the ae component of
For a sine wave input Vm sin (.)t) to the diode, assumed lossless. the maximum theoretical Vo with a true rms ac voltmeter and the de component with a de voltmeter. The data was
efficiency factor becomes: used in Equation 1 to obtain points for Figure 11.
lN40S7,A thru lN408S, A

1-93
(MZ4614 thru MZ4627) *
LOW-LEVEL SILICON PASSIVATED ZENER DIODES

SILICON
ZENER DIODES
· .. designed for 250 mW applications requiring low leakage, low
impedance, and low noise. 1±5.0% TOLERANCE)
• Voltage Range from 1.8 to 100 Volts 250 MILLIWATTS

1.8-100 VOLTS
• First Zener Diode Series to Specify Noise-50% Lower than
Conventional Diffused Zeners
SILICON OXIDE
• Zener I mpedance and Zener Voltage Specified for Low· Level PASSIVATED JUNCTION
Operation at I ZT = 250 p.A
• Low Leakage Current -
IR from 0.01 to 10p.A over Voltage Range
• Expanded Temperature Range -
T J = -65 to +2000 C
MAXIMUM RATINGS
Rating Value Unit
DC Power Dissipation, 25°C Ambient 250 mW

Derati ng Factor 1.43 mW/oC
Junction and Storage Temperature -65 to +200 °c
CASE: Hermetically sealed, all-glass.
FINISH: All external surfaces are corrosion resistant and leads are readily
solderable and weldable.
t
*
WEIGHT: 0.2 gram lapprox)
.....-----t- &Ill VIA
POWER TEMPERATURE DERATING CURVE

1 ::~l VIA
LOOMIN
L
250
~
5 200
~
'"
Z
0
;::: CATHODE/
<t 150
I"-.. BAND
"-
iii
<J)
Ci 100
""- ~
a: ..........
w
~
s:0
Q.
50
cOl
'"
Q.
o CASE 51
(00·7)
o 25 50 75 100 125 150 175
TAl AMBI ENT TEMPERATU RE: (oC)
'Identical to 1 N4614 registration, except registration has a minimum package diameter of 0.115 inches.
1-94
1N4099 thru 1N4135, MZ4614 thru MZ4627 (continued)
IT A = 25°C unless otherwise noted) I ZT = 250 p.A and VF = 1.0 V max @ IF = 200 mA on all Types
Max Noise Density

Nominal Max Zenar Max At IZT = 250pA
Type
Number
Zener Voltage
Vz
(Note 11
Impadanae
ZZT
(Note 21
R..._
Current .,
(Note 41
Test
Voltage
NO
(Fig 11
(micro-volts per
Max Zener Current
IZM
(Note 31
IR VR
(Note 11 (Voltsl (Ohms! (pAl (Volts) Square Root Cyclel (mAl
MZ4614 1.8 1200 7.5 1.0 1.0 120
MZ4615 2.0 1250 5.0 1.0 1.0 110
MZ4616 2.2 1300 4.0 1.0 1.0 100
MZ4617 2.4 1~00 2.0 1.0 1.0 95
MZ4618 2.7 1500 1.0 1.0 1.0 90
MZ4619 3.0 1600 0.8 1.0 1.0 85
MZ4620 3.3 1660 7.5 1.5 1.0 80
MZ4621 3.6 1700 7.5 2.0 1.0 75
MZ4622 3.9 1660 5.0 2.0 1.0 70
MZ4623 4.3 1600 4.0 2.0 1.0 65
MZ4624 4.7 1560 10 3.0 1.0 60
MZ4625 5.1 1500 10 3.0 2.0 55
MZ4626 5.6 1400 10 4.0 4.0 50
MZ4627 6.2 1200 10 5.0 5.0 45
lN4099 6.8 200 10 5.2 40 35
lN4100 7.5 200 10 5.7 40 31.8
lN4101 8.2 200 1.0 6.3 40 29.0
lN4102 8.7 200 1.0 6.7 40 27.4
lN4103 9.1 200 1.0 7.0 40 26.2
lN4104 10 200 1.0 7.6 40 24.8
lN4105 11 200 0.05 8.5 40 21.6
lN4106 12 200 0.05 9.2 40 20.4
lN4107 13 200 0.05 9.9 40 19.0
lN4108 14 200 0.05 10.7 40 17.5
lN4109 15 100 0.05 11.4 40 16.3
lN4110 16 100 0.05 12.2 40 15.4
lN4111 17 100 0.05 13.0 40 14.5
lN4112 18 100 0.05 13.7 40 13.2
lN4113. 19 160 0.05 14.5 40 12.5
lN4114 20 160 0.01 15.2 40 11.9
lN4115 22 160 0.01 16.8 40 10.8
lN4116 24 150 0.01 18.3 40 9.9
lN4117 25 160 0.01 19.0 40 9.5
lN4118 27 160 0.01 20.5 40 8.8
lN4119 28 200 0.01 21.3 40 8.5
lN4120 30 200 0.01 22.8 40 7.9
lN4121 33 200 0.01 25.1 40 7.2
lN4122 36 200 0.01 27.4 40 6.6
lN4123 39 200 0.01 29.7 40 6.1
lN4124 43 250 0.01 32.7 40 5.5
lN4125 47 260 0.01 35.8 40 5.1
lN4126 51 300 0.01 38.8 40 4.6
lN4127 56 300 0.01 42.6 40 4.2
lN4128 60 400 0.01 45.6 40 4.0
lN4129 62 500 0.01 47.1 40 3.8
lN4130 68 700 0.01 51.7 40 3.5
lN4131 75 700 0.01 57.0 40 3.1
lN4132 82 800 0.01 62.4 40 2.9
lN4133 87 1000 0.01 66.2 40 2.7
lN4134 91 1200 0.01 69.2 40 2.6
lN4135 100 1500 0.01 76.0 40 2.3
NOTE 1: TOLERANCE AND VOLTAGE DESIGNATION onlZT·

The type numbers shown have a standard tolerance of NOTE 3: MAXlMUMZENERCURRENTRATINGS(IZM)
±S.O% on the nominal zener voltage. Maximum zener current ratings are based on maximum
NOTE 2: ZENER IMPEDANCE (ZZT) DERIVATION zener voltage of the individual units.
The zener impedance is derived from the 60 cycle ac volt- NOTE 4: REVERSE LEAKAGE CURRENT IR
age, .which results when an ac current having an rms value Reverse leakage currents are guaranteed and are measured
equal to 10% of the dc zener current (IZT) is superimposed at VR as shown on the table.
1-95
1N4099 thru 1N4135, MZ4614thru MZ4627 (continued)
ZENER NOISE DENSITY

A zener diode generates noise when it is biased in the zener RMS noise for any bandwidth.
direction. A small part of this noise is due to the internal
Noise density decreases as zener current increases. This
resistance associated with the device. A larger· part of zener
can be seen by the graph in Figure 2 where a typical noise
noise is a result of the zener breakdown phenomenon and is
density is plotted as a function of zener .current.
called miC{OPlasma noise. This microplasma noise is gener-
ally considered "white" noise with equal amplitude for all The junction temperature will also charige the zener noise
frequenciesfromaboutzerocyclestoapproximately 200,000 levels. Thus the noise rating must indicate bandwidth,
cycles. To eliminate the higher frequency components of current level and temperatute.
noise a small shunting :capacitor can be used. The lower fre- The block diagram given in Figure 1 shows the. method
quency noise generally must be tolerated since a capacitor used to measure noise density. The input voltage and load
required to eliminate the lower frequencies would degrade resistance is high so that the zener is driven from a constant
the regulation properties of the zener in many applications. current source. The amplifier must be low noise so that the
Motorola is rating this series with a maximum noise den- amplifier noise is negligible compared to the test zener. The
sity at 250 microamperes. The rating of microvolts RMS fIlter bandpass is known so that the noise density in volts
per square ro.ot cycle enables calculation of the maximum RMS per square root cycle can be calculated.
FIGURE 1 - NOISE DENSITY MEASUREMENT METHOD
AMPLIFIER
+ FILTER
fo - 2 kHz TRUE
V... rms
D.C. POWER TEST ZENER V, fl - 1 kHz
VOLT
SUPPLY f2 = 3 kHz
METER
BW= 2 kHz
. Y•
NOISE DENSITY (VOLTS PER SQUARE ROOT CYCLE) = OY-E;-AL-L-GA-I-N-yaw-::B=W
WHERE, BW = FILTER BANDWIDTH (CYCLES)

V.,. = OUTPUT NOISE (YOLTS RMS)
FIGURE 2 - TYPICAL NOISE DENSITY venus ZENER CURRENT

40
g
'-'
>-
'-'
>-
0
0
...'" 30
'"<
::> r-....
CI
'"ffi f". f'..

... ~1l5
~ 20
0
> .......
~
~ ...........
'-'
~
>-
I'-- ........... ............ ...
>-
........... r-...!.N4124
--
u;
15 10
...
Q
r--.
0'" I"'"
z:
Q
z:
o
o 75 100 125 150 175 200 225 250 275 300
I, ZENER CURRENT (!tA)
1-96
1N4099 thru 1N4135, MZ4614 thru MZ4627 (continued)
FIGURE 3 - TYPICAL CAPACITANCE FIGURE 4 - TYPICAL FORWARD CHARACTERISTICS

1000 1000
700 TJ 25°C 500
Vz 3.9V
500
200 /
300 <C
8.2V .s f
..,.... 100
'"
.!3-
~
<.>
:f
t:
~
100
200
70
1"-1- 27 V
SOV
;
~ 20
0
- r-- TJ 150°C/ 100 o'Cr r-25°C ~ 55°C/
~
u
0
0
0
IC;V -- - "-
~
~
~
Ia
5. 0
2. 0 / 1/
L
I0 1 I. 0 /
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VR, REVERSE VOLTAGE IVOlTS) V" FORWARD VOLTAGE (VOLTS)
1N4370 thru 1N4372

For Specifications, see IN746 Data.
1-97
1N4387 (SILICON)
(MV1804)
Silicon varactor diode for high-power frequency mul-

tiplication applications.
CASE 44
(00·4) cathode connected to stud
MAXIMUM RATINGS

Reverse Voltage VR 150 Vdc
RF Power Input Pin 40 Watts
Total Device Dissipation @ TC = 75°C PD 20 Watts

Derate above 75° C 200 mW/oC
Operating and Storage Junction
Temperature Range T J , T stg -65 to +175 °c
ELECTRICAL CHARACTERIST.lCS (Tc = 25'C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

Reverse Breakdown VoLtage BV R Vdc
(r R = 10 /-LAdc) 150 200 -
Series Resistance RS Ohms
(V R = 6.0 Vdc, f = 50 MHz) - 1.0 1.5
Junction Capacitance * CT pF
(V R = 6.0 Vdc, f =1.0MHz) - 25 35
Figure of Merit Q
.
-
(V R = 10 Vdc, f = 50 MHz) 150 200
FUNCTIONAL TESTS
Power Output TripLer Circuit P 15 18 . Walts
out
Pin = 30W, fin = 150 MHz,
Efficiency f out = 450 MHz 1) 50 60 - %
POWER OUTPUT versus OUTPUT FREQUENCY SERIES RESISTANCE AND FIGURE OF MERIT
FOR HARMONIC TRIPLING versus REVERSE VOLTAGE
30 1400 1.4
25 -- p.. 140 WAnS
I I"..
120 0 1.2 i
:.:
... 1000 1.0 e
"
P,. - 30 WATTS
~
I ....... , ffi Ql-' z
...... ~ 800 0.8 ~
-- P,.
I
20 WATTS
'.
o
.
~
;;:
600 " f~50MHz
0.6 ~
fil
" ii:
p," = 10 WAnS
I
~
d 400
20o I
" l- Rs
0.4 ~
0.2
,
I 0 o
100 200 400 600 800 20 40 60 80 100 120 140 160 180 200
f~,. OUTPUT FREQUENCY (MHz) V•• REVERSE VOLTAGE (VOLTS)
1 N4388 (SILICON)
(MV1806)
Silicon varactor diode for high-frequency harmonic

generation applications.
cathode connected to stud

CASE 44
(00·4)
MAXIMUM RATINGS

Reverse Voltage VR 100 Vdc
Forward Current IF 1.0 Amp
RF Power Input P. 25 Watts

m
Derate above 75° C 0.10 W;OC

Temperature Range T J , T stg -65 to +175 °c
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)

Reverse Breakdown Voltage BV R Vdc
(I R = 10 !lAdc) 100 150 -
Reverse Current IR !lAde
(V R =75Vde) - 0.5 2.0
(V R =75Vde, T A =150°C) - - 100
Diode Capacitance CT * pF
(V R = 6.0 Vde, f =l.OMHz) - 10 20
(V R =90Vde, f=l.OMHz) - 5.0 10
Series Resistance RS Ohms

(V R = 6.0 Vdc, f = 50 MHz)
- 1.2 2.0
Figure of Merit Q -
(V R = 10 Vdc, f = 50 MHz) 200 300 -
(V R = 90 Vdc, f = 50 MHz) 1000 - -
FUNCTIONAL TESTS
Power Output Doubler Circuit P
out
11.0 12.0 - Watts
(Figure 1)
Pin = 20 W, fin = 500 MHz,
Efficiency f out = 1000 MHz 1) 55 60 - %
1-99
1N4388 (continued)
POWER OUTPUTversus OUTPUT FREQUENCY

FIGURE OF MERITversus REVERSE VOmGE DOUBLING (X2)
3000 20
2000 I=ISO ~HZ ,.
. 2~oC
:,...-
1000
IS
r- 1-1- p!, ~oJ
I
SOO
i!; 200
tl
V'
- "8soc - ~
i 10
r-- 1-1-
~
~
d
100 /
'" ; P,,~ lOW
50 r""--
'l ¥,.~sw
20
p,. 3W
10 o
1.0 2.0 s.O 10 20 50 100 100 200 300 400 500 700 10001200
VR, REVERSE VOLTAGE (VOLTS) I, OUTPUT FREQUENCY (MHz)
TRIPLING (X3) QUADRUPLING (X4)

0 0
O
r-
- r-!'" ~ 20W
r-I- ........
t- I-t--
s
0
......
N:ri
r--r-....r-..,
P" lOW
..........
~
S I I
P,,-SW
s
p:,_~WI - 1--
-- ........
Pi, 3W Pill 3W
0 0
100 200 300 400 SOO 700 1000 1200 100 200 300 400 500 700 1000 1200
I, OUTPUT FREQUENCY (MHz) I, OUTPUT FREQUENCY (MHz)
FIGURE 1 - HARMONIC DOUBLER EFFICIENCY TEST CIRCUIT

500 MHz COAX CAVITY 1000 MHz COAX CAVITY
r----------, r------------,
500 MHz o--f1 ,-+'----....--+---+-1, ( i 01000 MHz
I
lift 50 ohms.
P,,20W I MEGOHM
I 'I
, ,
,
L ____ _ I
0.5·12pF I,L ,I
_..J __________ J
1-100
1N4549 thru 1N4556
lN4557 thru lN4564
For Specifications, See lN2804 Data
1N4565-1 N4584
1N4775- 1N4784
lN4765-1N4774
Low level temperature-compensated zener reference
diodes-highly reliable reference sources utilizing an
oxide-passivated junction for long-term voltage stability.
RamRod construction provides a rugged, glass-enclosed,
hermetically sealed structure.
CASE 51
(00-7)
MAXIMUM RATINGS
Junction and Storage Temperature: -650 C to +175 0 C

DC Power Dissipation: 400 Milliwatts at 500C Ambient
(Derate 3.2 mWfOC Above 500C)
CASE: Hermetically sealed. all-glass

FINISH: All external surfaces are corrosion resistant and leads are readily solderable and
weldable.
1-101
1N4565·1 N4584/1 N4775·1 N4784/ 1N4765·1 N4774 (continued)
t;Vz @ Test Temperatura Drnamic t;Vz @ Test Temperatura Dynamic

(Note 11 Temperatura Coefllclent Impad. (Note 1) Temperatura Coefficient Imped.
Volts far Reference Ohms Volts far Reference Ohms
TYPE Ma.
I ·C %I"C
(Note 11
Max
(Note 21
TYPE Max
Vz
·C %I"C
(Note II
=8.5 Volts ±5% (lZT =0.5 mAl
Max
(Note 21
Vz =1.4 Volts ±5% (IZT =0.5 mAl lN4775

IN4771
0.064
0.032
D.ot
0.005
lN4515 0.041 0.01 lN4777 0.013 0, +25, 0.002 200
lN4566 0.024 0.005 IN4778 0.006 +75 0.001
IN4567 0.010 0, +25, 0.002 200 lN4779 0.003 o.oDDS
lN4588 0.005 +75 D.DDI
D.DDDS lN4775A 0.132 0.01
lN4569 0.002
lN4776A 0.066 -55,0, 0.005
IN4515A 0.099 0.01 IN4777A 0.026 +25, +75, 0.002 200
lN4566A 0.050 -55,0, 0.005 lN4778A 0.013 +100 D.DDI
IN4'I7A 0.020 +25, +75, 0.002 2DD lN4779A 0.007 o.oDDS
IN4518A 0.010 +IDD D.DDI
lN4519A 0.005 D.DDD5 Vz =8.5 Volts ±5% (IZT =1.0 mAl
Vz =6.4 Volts ±5% (IZT =1.0 mAl lN4780 0.064 0.01
lN4781 0.032 0.005
lN4570 0.048 0.01 lN4782 0.013 0, +25, 0.002 100
lN4571 0.024 0.005 lN4783 0.006 +75 0.001
lN4572 0.010 0, +25, D.DD2 100 lN4784 0.003 D.DDDS
lN4573 0.005 +75 D.DDI
lN4574 0.002 0.0005 lN4780A 0.132 0.01
I N4781 A 0.066 -55,0, 0.005
lN4570A 0.099 0.01 lN4782A 0.026 +25, +75, 0.002 IDD
lN4571A 0.050 -55,0, 0.005 lN4783A 0.013 +100 D.DDI
IN4572A 0.020 +25, +75, 0.002 100 IN4784A D.DD7 0.0005
lN4573A 0.010 +100 0.001
lN4574A 0.005 D.DDDS Vz =1.1 Volts ±5% (IZT = 0.5 mAl
Vz =6.4 Volts ±5% (IZT =2.0 mAl lN4765 0.068 0.01
lN4575 0.048 0.01 lN4761 0.034 D.DD5
lN4571 0.024 0.005 IN4767 0.014 0, +25, 0.002 350
lN4577 0.010 0,+25, 0.002 50 IN4766 0.007 +75 0.001
lN4578 0.005 +75 0.001 IN4719 0.003 D.D005
lN4579 D.DD2 D.DDD5
lN471SA 0.141 0.01
lN4575A 0.099 0.01 IN4716A 0.070 -55,0, 0.005
lN4571A 0.050 -55,0, D.DDS lH4767A 0.028 +25, +75, 0.002 350
lN4577A 0.020 +25, +75, 0.002 50 lN4768A 0.014 +100 0.001
lN4578A 0.010 +100 D.DDI lN4761A 0.007 0.0005
lN4579A 0.005 D.DDD5
Vz =6.4 Volts ±5% (IZT =4.0 mAl Vz ='.1 Volts ±5% (lz, =1.0 mAl
lN4580 0.048 0.01 lN4770 0.068 0.01
lN451t 0.024 0.005 lN4771 0.034 0.005
lN4582 0.010 0,+25, 0.002 25 lN4772 0.014 0,+25, D.DD2 200
lN4583 0.005 +75 0.001 IN4773 0.007 +75 0.001
lN4584 0.002 D.DDDS lN4774 0.003 D.DDDS
lN4580A 0.099 0.01 lN4770A 0.141 0.01

lN4581A 0.050 -55,0, D.DDS I N4771 A 0.070 -55,0, 0.005
lN4512A 0.020 +25, +75, 0.002 25 lN4772A 0.028 +25, +75, 0.002 2DD
lN4583A 0.010 +100 0.001 lN4773A 0.014 +100 0.001
1.N4584A 0.005 0.0005 lN4774A 0.007 0.0005
NOTE 1: NOTE 2:
Voltage Variation c",vZl and Temperature Coefficient. The dynamiC zener impedance. ZZT. is derived from the 6O-Hz ac
All reference diodes are characterized by the "box method". This voltage drop which results when an ac current with an rms value
guarantees a maximum voltage variation (.0. VZ) over the specified equal to 10% of the dc zener current. IZT. is superimposed on IZT.
temperature range. at the specified test current (I ZT). verified by A cathode--ray tube curve--trace test on a sample basis is used to en-
tests at indicated temperature points within the range. This method sure that the zener has a sharp and stable knee region.
of indicating voltage stability is now used for JE DE C registration as
well as for military qualification. The former method of indicating
voltage stability - by means of temperature coefficient - accurately
necessarily accurate within the temperature range because reference
diodes have a nonlinear tel1"perature relationship. The temperature
coefficient, therefore. is given only as a reference.
1-102
lN4997 thru 1N5003
MR1030 thru MR1036, MR1038, MR1040
CASE 60 CASE 70
IN4719 THRU IN4725 IN4997 thru IN5003
MRI030A THRU MRI040A MRI030B THRU MRI040B
Silicon high-conductance rectifiers available in either

axial-lead or single-ended packages. Type numbers
shown have cathode connected to case. For anode-
to-case connection, add suffix "R" to type number,
i. e. IN4719R
MAXIMUM RATINGS (Both Package Types) TA = 25°C unless otherwise noted

IN IN IN IN IN IN IN
Rating Symbol 4719 .4720 4721 4722 4723 4724 4725 Unit
MR MR MR MR MR MR MR MR MR
1030 1031 1032 1033 1034 1035 1036 1038 1040
Peak Repetitive Reverse Voltage VRM (rep)
Working Peak Reverse Voltage VRM (wkg) 50 100 200 300 400 500 600 800 1000 Volts
Non-Repetitive Peak Reverse VRM

Voltage (non-rep)
(one half-wave, single phase, 100 200 300 400 500 600 '120 1000 1200 Volts
60 cycle peakl
RMS Reverse Voltage Vr 35 '10 140 210 280 350 420 560 '100 Volts
Average Rectified Forwa~d Current 10

(single phase, resistive load, 3.0 Amp
60 cps. T A = '150 C) see figure 4
Peak Repetitive Forward Current IFM (rep) 25 Amp

(T A = '15OC)
NOn-Repetitive Peak Surge CUrrent IFM(surge)

(superimposed on rated current
300 (for 1/2 cycle) Amp
at rated voltage, T A = '15OC)
see figure 1
12t Rating (non-repetitive, 12t A(rms)2s

185
1 msec <t <8.3 msec)
Operating and Case Temperature TJI Tstg -65 to + 1'15 OC
Thermal Resistance 9 JA 30 °C/Watt
1-103
1N4719 thru 1N4725 (Continued)
ELECTRICAL CHARACTERISTICS FORWARD VOLTAGE CHARACTERISTICS
Characteristic Symbol Max limit Unit 400

Full Cycle Average Forward Voltage Drop VF(AV) Volts
(10 = 3.0 Amps and Rated Yr. 200 /'
0.45 p-
~
TA = 75°C. Half Wave Rectifier)
lOa
DC Forward Voltage Drop Volts
VF
0.9 8o
(IF = 3.0 Adc. TA = 25°C) 60
Full Cycle Average Reverse Current IR(AV) mA 0
(10 = 3.0 Amps and Rated Yr' 1.5 /
;;;:
TA = 75°C, Half Wave Rectifier)
~ 20 /
DC Reverse Current
(Rated YR' T A . = 25°C)
IR 0.5
mA
>-
15
~
8
10
8. a
T, = 150"1
'L
li! 6. a
MAXIMUM SURGE CURRENT TA = 75°C)

! 4<0
i
~
I I
. ~
--
~ 400 fa 2. a
~o:
::l ""
Q. 5 300
z
~ 1. 0
~ O. 8
I liT, = 25"C
~ !z r-- l"- t- ~ o. 6
~'"_ u'"'~ 200
r--- r---
4
'"'"' '"'>
Q.
~
..
;: lOa 0< 2 1
.J
j~
,'" <
01
8 10 20 40 80< lao
I
0< a 0<2 OA
I 0<6 0<8 LO 1.2 1.4 L6 1.8 2<0
CYCLES AT 60 CYCLES PER SECOND v,. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
MAXIMUM FORWARD POWER

DISSIPATION versus AVERAGE FORWARD CURRENT MAXIMUM FORWARD CURRENT versus AMBIENT TEMPERATURE
~ 150·IC TO 1~5·C
5<0
RES'ISTl~E OR 'INDJCTIVE LOAD)
T,
J ~V (60 CPS.
6t/ V 4<0
I-
I-
1'\
~ V/ V ;;;: '\ DC
""5>- t-
J~ I</> V ~
'" 3<0 1'\
~ Voc
13 'I'-
.
Q
'"
I</>
r\
1'\
~ V/ V ~
;:
'"
~ I'-I'-
'"..'"'
2<0
~ ~V .
0:
~
6ot> t-.....,
" "~ '\ ~
~~ 1 1.0 ~
""'"
.....
~
~~
~ r- "~ ~
I~
I\.
0
o 4 60 80 100 120 140 160 180
I" •• ,. AVERAGE FORWARD CURRENT (AMP) TAo AMBIENT TEMPERATURE ('C)
1-104
lMll0ZS10 thru lM200ZS10
De~jg·np.·~ Data Sheet

1.0 WATT
1.0 WATT SURMETIC 30 SILICON ZENER DIODES ZENER REGULATOR DIODES
. . a complete series of 1.0 Watt Zener Diodes with limits and 3.3-200 VOLTS
operating characteristics that reflect the superior capabilities of
silicon-ox ide-passivated junctions. All this in an axial-lead, transfer-
molded plastic package offering protection in all common environ-
mental conditions.
• To 80 Watts Surge Rating @ 1.0 ms
• Maximum Limits Guaranteed on Six Electrical Parameters
• Package No Larger Than the Conventional 400 mW Package

The Designers Data sheets permit the design of most circuits entirely from the in-
formation presented. Limit curves ~ representing boundaries on device characteris-
tics - are given to facilitate "worst case" design.
MAXIMUM RATINGS
*DC Power Dissipation @TA = 50°C Po 1.0 Watt
Derate above 50°C 6.67 mWloC
DC Power Dissipation @TL = 75°C Po 3.0 Watts
Lead Length = 3/8"
berate above 75°C 24 mWloC
·Operating and Storage Junction TJ, Tstg -65 to +200 °c
Temperature Range
CASE: Void-free, transfer-molded, thermosetting plastic
FI N I SH: All external surfaces are corrosion resistant and leads are readily solderable
o
I I 0.100 DIA
and weldable --l f-- 0.107
POLARITY: Cathode indicated by polarity band. When operated in zener mode,cathode
will be positive with respect to anode
WE IG HT: 0.4 gram lapprox)
,1" --::l:
~
:t
~ 4.0
~
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
5.0
~
~
........
I\.
\
I\.
L = LEAOI LENGTH_
TO HEAT SINK
L ==t'".
POLARITY MARK
'"
;t
~ 3.0
i'... L=l/S" ' \
(CATHODEI I
'\
'"
C
'"3! r--..",,- L- 3/S"
f'.... \
1.10
,.'"
::>
2.0
--.. r--... .......... I\.
_l
-
............ r-... .......... \
x L = 1.0"
«
'"~
1.0
I ............
-... ""- I\. To convert Inches to millimeters multiply by 25.4
~ AIiJEDECdimeoslOlisand notesaplily
20 40 60 SO 100 120 140 160 ISO 200
TL, LEAO TEMPERATURE IOC) CASE 59
D0-41
• Indicates JEDEC Registered Data
1-105
1M110ZS10 thru 1M200ZS10
ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted) 'VF = 1.5 V max, IF = 200 mA for all type.
·Nominal ·Max Zen.r Impedance ·L.... age 'Surge
ZenerYoitage 'Test (Nota 41 Current Current
JEDEC Motorola YZOIZT Current OTA-2&OC
Type No.' TypaNo. Volts .·jZT ZZTO·IZT ZZKOIZK .IZK .IR.. VR, ir-.I!I~
(Note 11 (Note 21 (Nota 2& 31 .inA Ohms Ohriii' IlIA pAMaxOV'l'ts '(~51
lN4728 lM3.3ZS10 3.3 ,76 " '10 400 1.0 1 oil 1.0' 'lS0 ,'.
lN4729 lM3.6ZS10 3.6 69 10 400 1.0 100 1.0 1260

lN4730 ,lM3.9ZSfO " ~.I! 64 9.0 400 1.0 50 1.0 1190
lN4731 lM4.3Ziho . 4,'3' 5B 9.0 400 1.0 10 1:0 "'1070
lN4732 lM4.7ZS10 4.7 53 8.0 500 1.0 10 1.0 970
lN4733 lM5.1Z$10 5.1 49 7.0 550 1.0 10 1.0 890
lN4734 1M5.6ZS10 5.6 45 5.0 600 1.0 10 2.0 810
lN4135 1M6.2ZS10 6.2 41 2.0 700 1.0 10 3.0, 730
lN4736 lM6.8ZS10 6.8 37 3.5 700 1.0 10 4.0 .660
lN4737 lM7.5ZS10 7.5 34 4.0 700 0.5 10 5.0 605
lN4738 1 M8.2ZS1 0 8.2 31 4.5 700 0.5 10 6.0 550
lN4739 lM9.1ZS10 9.1 2B 5.0 700 0.5 10 7.0 500
lN4740 lMl0ZS10 10 25 7.0 700 0.25 10 7.6 454
lN4741 lMl1ZS10 11 23 ·B.O ,700 0.25 5.0 8.4 414
lN4742 lM12ZS10 12 21 9.0 700 0.25 5.0 9.1 380
lN4743 lM13ZS10 13 19 10 700 0.25 5.0 9.9 344
lN4744 lM15ZS10 15 17 14 700 0.25 5.0 11.4 304
lN4745 lM16ZS10 16 15.5 16 700 0.25 5.iI 12.2 2B5
lN4746 lM1BZS10 18 14 20 750 0.25 5.0 13.7 250
lN4747 lM20ZS10 20 12.5 22 750 0.25 5.0 15.2 225
lN4748 lM22ZS10 22 11.5 23 750 0.25 5.0 16.7 205
lN4749 lM24ZS1,0 24 10.5 25 750 0.25 5.0 lB.2 190
lN4750 lM27ZS10 27 9.5 35 750 0.25 5.0 20.6 ,170
lN4751
lN4752
lM30ZS10
lM33ZS10
30
33
B.5
7.5
40
45
1000
1000 .~:~~ 5.0
5.0
22.8
25.1
150
135
lN4753 lM36ZS10 36 7.0 50 1000 0.25 5:0 27.4 '125
lN4754 lM39ZS10 39 6.5 60 1000 0.25 5.0 29.7 115
lN4755 lM43ZS10 43 6.0 70 1500 0.25 5.0 32.7 110
'lN4756 1 M47ZS1 0 47 5.5 BO 1500 0.25 5.0 35.B 95
lN4757 lM51ZS10 5'1 5.0 95 1500 0.25 5.0 38.B "90
lN475B lM56ZS10 56 4.5 110 2000 0.25 5.0 42.6 BO
lN4759 lM62ZS10 62 4.0 125 2000 0.25 5.0 47.1 70
11114760 lM6BZS10 6B 3.7 150 2000 0.25 5.0 51.7 65
lN4761 lM75ZS10 75 3.3 175 2000 0:25 5.0' 56.0 60
lN4762 1MB2ZS10 B2 3.0 200 3000 0.25 5.0 62.2 55
lN4763 lM91ZS10 91 2.B 250 3000 0.25 5.0 69.2 50
lN4764 lMl00ZS10 100 2.5 350 3000 0.25 '5.0 76.0 45
- lMll0ZS10 110 2.3 460 4000 0.25 5.0 B3.6 -
- lM120ZS10 120 2.0 550 4600 0.25 5.0 91.2 -
- lM130ZS10 130 1.9 700 5000 0.25 5.0 98.B -
- lM150ZS10 150 1.7 1000 6000 0,25 5.0 U4.0 -
- lM160ZS10 160 1.6 1100 6500 0.25 5.0 1-21.6 -
- lM1BOZSltl 180 1.4 1200 7000 0.25 5.0 136:B -
- lM200ZS10 200 1.2 1500 BODO 0.25 5.0 152,0.. -
• Indicates JEOEC Registered Data
NOTE 1 - TOLERANCE AND TYPE NUMBER DESIGNATION
the JEDEC type numbers listed:have a standard tolerance on , (B) MATCHED SETS: .lStendard Tolerances are±5.0%. ±3.0%.
the nominal zener voltage of ± 10%. A standard tolerance of ±5% ±2.0%. ± 1.0%1. ' '
on individual unitS is also availeble and is indicated by suffixing
"A" to the standard type nu"!ber. Zener diodes can be obtained in setS consisting of two
or more matched devices. The method for specifying such
NOTE 2 - SPECIALS AVAILABLE INCLUDE: matched sets is similar to the one described in (A). except
that two extra suffixes are edded to the code nu mber
(A) NOMINAL ZENER VOLTAGES BETWEEN THE VOLT· described.
AGES SHOWN AND TIGHTER VOLTAGE TOLER·
ANCES: To designate units with zenei' voltages oth.r These unitS are marked with COde letters to identify the
than those. assigned JEDEC numbers andlor tight voltage matched sets and. in addition. each unit .ili a set is marked
tolerances (±5%. ±3%. ±2%. ±1%1. the' Motorola type with the same sarial number. which is different for eech set
number should be used. being ordered. '
+ 1M
J'
90 Z S 3 ; M 5 Z S 5B 1
Device
Description --.J
Motoro";
T1
Nominal
'T
Surmetic
Tolerance
(±%) ,
T
D~
Description Motorola
'Code:
T
-r-
51 Volts
(each device)
Zener
.
:J T
Surmetic
LOvIrallTolerance
of set
1±1%)
Voltage B - Two devices in series Diodes
Zener C - Three devices in series Tolerance' , Code'
" ·(A·Not used)
Diode D - Four devices in _ies per device (±5%)
(omit for ±20% units)
Example: lM90ZS3 Example: lM51ZS5Bl
1-106
lN4728 thru lN4764 (continued)
(CI ZENER CLIPPERS: (Standard Tolarance±IO% and ±5%1. APPLICATION NOTE
Special clipper diodes with opposing Zener junctions built Since the actual voltage ayailable from. given zener diode is
into the device are available bV using the following nomen- temperature dependent, it is necessary to determine junction tem-
clature: perature under any ••t of operating conditions in order to calculate
, M 20 Z Z S 10
its. value. The following procedure is recommend'ed:
T T T
TT
Lead Temp.erature. TL' should be determined from:
Surmetic
Device
Description
T
Motorola
Nominal
Voltage
Zener
Diode
Clipper
8 LA is the lead-to-ambient thermal resistance (oC/W) and

Po is the power dissipation. The valUe for 8 LA will vary
and depends on the device mounting method. 8 LA is gen-
T oleranee for each of erally 30-40 0 C/W for the various clips and tie points in
the two Zenar volteges common use and for printed circuit board wiring.
Example: 1M20ZZS10 (not a matching require-
mentl
The temperature of the lead can also be measured using a thermo-
couple placed on the lead as close 8$ possible to the tie point. The
thermal mass connected to the tie point is normally large enough
so that it will not significantly respond to heat surges generated in
NOTE 3 - ZENER VOLTAGE (VZI MEASUREMENT the diode as a result of pulsed operation once steady-state condi-
tions are achieved. Using the measured value of T L. the junction
Motorola guarantees the zener voltage when measured at 90 tamperature may be determined by:
seconds while maintaining the load temperature (T LI at 3aDC ± ,oC.
3/8" from the diode bodV.
NOTE 4 - ZENER IMPEDANCE (ZZI DERIVATION ~T JL is the increase in junction temperature above the lead
temperature and may l;J,e found from Figure 2 for 8 train of
The zenar impedance is derived from the 60 cvcle ac voltage.
power pulses (L = 3/8 inch) or from Figure 3 for dc power.
which results when an ac current having an rms value equal to '0%
of the de zener current (lZTor IZKI is superimposed on IZT or IZK.
NOTE 5 - SURGE CURRENT lirl NON·REPETITIVE For worst-case design. using expected limits of I Z. limits of Po
and the extremel of T J(~T J) may be estimated. Changes in voltage.
The rating listed in the electrical characteristics table is maxi-
VZ, can then be found from:
mum peak. non-repetitive, reverse surge current of 1/2 square wave
or equivalent sine wave pulse of 1/120 second duration super-
imposed on the test current.IZT. per JEDEC registration. however.
actual device capability is as described in Figures 4 and 5.
8VZ, the zener voltage temperature coefficient, is found from
Figures 6 and 7.
Under high power-pulse operation, the zener voltage will vary

with time and may also be affected significantly by the zener resist-
ance. For best regulation. k_p current excursions nlow as possible.
Data of Figure 2 should not be used tocomputesurgecapabllity.
Surge limitations are given in Figure 4. Thev are lower than would
be expected by conSidering only junction temperature, as current
crowding effects cause temperatures to be extremely high in small
spots resulting in device degradation should the limits of Figure 4
be exceeded.
1-107
lN4728 thru lN4764 (continued)
FIGURE 2 - TYPICAL THERMAL RESPONSE, LEAD LENGTH L= 3/8 INCH

w 30
~ 20 I
~
0-0.5
i""'"
".
iii ~ 10
--
"'<.>
-' ~ 7.0 - 0 . 2
~~ 5.0
~~
>->:-
ffi
tilt=:
Zu
~ ~ 1.0
>-~
3.0
~ 2.0 -0.05
,I"
~0.02
0.1
~ ~ P"
- ~ ~
DUTY CYCLE. 0 1]/'2 - ~JL.JL
SING LE PU LSE "TJ L = OJLltlPPK
REPETITIVE PULSES "TJL = OJ Lit. D)PPK PPK ~I] '-- i
0.7 ~o NOTE: BelowO.1 Second, Thermal >-'2-'
AespQnse Curve is Applicable
0.5 F"-D 0
) '10 a~y ILe~dl ~'t9'h Ill.
0.3
0:0001
---
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02
" TIME ISECONOS)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
FIGURE 3 - TYPICAL THERMAL RESISTANCE FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE POWER
~
w
80 1000
800
DIFFUSED JUNCTION
OEVICE
<.> 70
Z 700
'"
to 60
/ ~
600
If
~ V >- 500
~ 50
//
,,/'
'"
~ 400
'"
ffi'" 40
'"5:w SQUARE WAVE PULSE
~ 300 PULSE WIDTH =0.01 ms
tL~
:I:
>-
0
30
//'" w
~
DUTY CYCLE =0%
TL =27 0 C±20 C@3/8"
~
~TL
V iil
6 /'" 200
>:-
20
/
I I
\
Z
0
~
Z
:;
10
PRIMARY PATH OF
CONDUCTION IS TH ROUGH
I THE CYHOO E ~EAO
100
ALLOY JIUNCTiON rTf
Z.O 3.0 5.0 7.0 10 20 30 50 70 100 zoo
~ 1/8 114 3/8 1/2 5/8 3/4 7/8
L, LEAD LENGTH TO HEAT SINK (INCH) VZ. ZENER VOLTAGE IVOL TS)
FIGURE 5 -SURGE POWER FACTOR

1.0
0 a
0.7 MULTIPLY NORMALIZED POWER FACTOR TIMES FIGURE4,~
'"~ 0.5 SU RGE POWER POINTFOR VOLTAGE IN QUESTION. TO OBTAIN
SURGE CAPABILITY AT DIFFERENT PULSE WIDTHS AND DUTY
~ 0.3 0.05 r--. CYCLES. THE 1.0 X REFERENCE POINT IS 0.01 msATO% DUTY
'"~ r- r-.. CYCLE.
----
all
01 r-
"-
w
~ 0.1 o.lz
~ 0.07
-
o
~ 0.05
j 0.03
-I-
~ 0.02
0.01
0.01 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 30 50 70 100 300 500 7001000
SQUARE WAVE PULSE WIDTH Ims)
1-108
1M 11 OZSl 0 thru 1M200ZS1 0
TEMPERATURE COEFFICIENTS AND VOLTAGE REGULATION

(90% OF THE UNITS ARE IN THE RANGES INDICATED)
FIGURE 6 - TEMPERATURE COEFFICIENT-RANGE FIGURE 7 - TEMPERATURE COEFFICIENT-RANGE
FOR UNITS TO 12 VOLTS FOR UNITS 10 TO 200 VOLTS
f- f-
!::' lO !::' 200
/
'"
G V '"G l.i!- f- I""' ~ f-
8.0
........
" r:t!
3; ./' / 3;
.s ~ I' .s 100
f-
55
<3
6.0
4.0
,/ ----
'"...<'" .......... ~
<3
V
~ ./ ./ I
~ 50
0
2.0
./ ./ RANGE
23 40
V ./
'-'
w
a;
~
~ 30 /1/
:::> V V :::>
j / ./ j 20
1/
as -2.0
V
v-'" 1t:e- 11L
f-
;3 -4.0 ~
N
10
II,
<:t:> 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 a 20 40 60 80 100 120 140 160 180 200
VZ, ZENER VOLTAGE@ IZT (Va LTSI Vz, ZENER va LTAGE@ IZT (VOLTS)
FIGURE a-VOLTAGE REGULATION

1.0
g 0.8
~ 0.6 I\,
w
IL
0.4 \1 \ V .L
;o
(!:I
0.3 f.1 V
> ~VZ
a;
./ TYPICAL
~ 0.2 t.Vz
YPICAL ./ RANG t2
RANGE
w I I
1\
V IZ - 0.1 to 0.5 of IZM
~ o. I
IZ 0.1 to
~ O.OS 0.5 of IZM
N 0.0 6
>
<l
./
0.0 4 1
2.0 3.0 5.0 10 20 30 50 70 100 200
VZ, ZENER VOL TAGE AT IZT (VOLTS)
FIGURE 9 - MAXIMUM REVERSE LEAKAGE

(95% OF THE UNITS ARE BELOW THE VALUES SHOWN)
~ w 100
G~ 50
r=
il:f-
en en 20
~'-' TA"125 0 C
-; t; 10
~ ~ 5.0
i<ta;~ 2.0
;:;; ~ 1.0 .....
'"~;;t'-' a.5
TA 25 0 C r---
~ ~ 0.2 r---
~ t 0.1
~w
[5 ~ 0.05
>w
~ ~ 0.0 2
IE ~ 0.0 1
3.0 5.0 7.0 10 20 50 100 200 300
NOMINAL Vz (VOLTS)
1-109
lN4765thru lN4774
lN4775thru lN4784
For Specifications; See IN4565 Data~
LOW NOISE
.lN4896,A TEMPERATURE~COMPENSATED
ZENER REFERENCE DIODES
thru
IN4915,A Highly reliable reference sources utilizing an oxide-passivated junc-
tion for' long-term voltage stability. RamR od construction: provides
a rugged, glass-enclosed, hermetically sealed structure.
12.8 V.:I:.5.0%
IN4916,A .• Low Noise Density Specified for Critical Applications
thru • Low Power Drain

Devices Specified @ 0.5 mA, ,1.0. mA~ 2.0 mA, 4,0 mA,
IN4932,A •
and 7.5mA
Maximum Voltage Change Specified over Test Temperature Range
19.2 V .:1:.5.0% • Temperature Compensation Guaranteed over Two Standard Oper-
atirig Temperature R~ges:
+25 to +WOoC
-55 to +1000C
MAXIMUM RATINGS
Junction and Storage Temperature: -650 C to +1750 C
DC Power Dissipation: 400 Milliwatts at 5O"c Ambient
(Derate 3.2 mW/oC Above-SOoC)
.- - - - - t &; DIA
'~:~~ DIA
CASE: Hermeticallv sealed, aUillass
FINISH: All external surfaces are corrosion resistant and leeds are·readilv
solderable and weldable.· '..
POLARITY: Cathode indicated bV polarity band.
MOUNTING POSITION: Anv
CASE 51
00-7
1,-:-110
1N4896, A thru 1N4915A, 1 N4916, thru 1 N4932, A (continued)
Dynamic Dynamic
-
Temp. Coeff. Imped. Temp. Coeff. Im.peeI.
o.VZ forR.,. Ohms o.VZ for Ref. Dh...
T... Volts %I"C Type Vol.. %I"C MIX
Number IN.tell IN_II IN_ZI Number IN.tell IN.tell IN_ZI
.V
IZT = 0.6 rnA *NO ". O.B- .v
IZT:II 0.5 rnA *NO = 1 . 0 -
JHz .JHz
1 N4896 0.096 0.01
lN4896A 0.198 0.01 lN4916 0.144 0.01
1 N4897 0.048 0.005 lN4916A 0.29S 0.01
1 N4897A 0.099 0.005 lN4917 0.072 0.005
1 N4898 0.019 0.002 400 lN4917A 0.149 0.006 600
lN4898A 0.040 0.002 lN4918 0.029 0.002
, N4899 0.010 0.001 lN4918A 0.060 0.002
lN4899A 0.020 0.001
.V • .V
'ZT = 1.0 mA *ND" O.4.JHz IZT= 1.0mA NO"'O.5-
.JHz
1 N4900 0.096 0.01 lN4919 0.144 0.01
lN4900A 0.198 0.01 lN4919A 0.298 0.01
lN4901 0.048 0.005 lN4920 0.072 0.005
1 N4901 A 0.099 0.005 lN4920A 0.149 0.005 300
lN4902 0.019 0.002 200 lN4921 0.029 0.002
lN4902A 0.040 0.002 1 N4921 A 0.060 0.002
VZ= 12.8 V 1N49D3 0.010 0.001
Vz = 19.2 V
lN4903A 0.020 0.001
.V .V
TEMPERATURE IZT'" 2.0 rnA ·NO .. 0.25 JHz IZT - 2.0 rnA *NO - 0.26 -
RANGE:
TEMPERATURE
RANGE: .JHz
lN4904 0.096 0.01 lN4922 0.144 0.01
STANDARD lN4904A 0.198 0.01 STANDARD lN4922A 0.298 0.01
DEVICES 1 N4905 0.048 0.006 DEVICES 1 N4923 0.072 0,006
1 N4905A 0.099 0.005 1 N4923A 0.149 0.005 150
+26, +75. +1000c +25, +75, +1000c 1N4924 0.029 0.002
lN4906 0.019 0.002 100
lN4906A 0.040 0.002 lN4924A 0.060 0.002
tN4907 0.010 0.001
··A"SUFFIX 1 N4907A 0.020 0.001 "A"SUFFIX
-65,0+ 26. .V .V
+75,+1000c IZT = 4.0 mA -NO = o.22Fz
-66.0. +25.
+75,+1000c IZT" 4.0 rnA *ND "" 0.22 JHz
, N490S 0.096 0.01 lN49215 0.144 0.01
lN49Q8A 0.198 0.01 lN4925A 0.298 0.01
lN4909 0.048 0.005 lN4926 0.072 0.005
lN4909A 0.099 0.006 lN4926A 0.149 0.005
lN491Q 0.019 0.002 50 lN4921 0.029 0.002 76
tN4910A 0.040 0.002 lN4927A 0.060 0.002
1N4911 0.010 0.001 1N4928 0.014 0.001
1N4911A 0.020 0.001 lN4928A 0.030 0.001
.V • .V
IZT = 7.5 mA *ND = 0.20- IZT' 7.5 mA ND' 0.20 .JHz
JHz
1N4912 0.096 0.01 1N4929 0.144 0.01
1N4912A 0.198 0.01 1N4929A 0.298 0.01
lN4913 0.048 0.005 lN4930 0.072 0.005
1N4913A 0.099 0.006 1N4930A 0.149 0.0015 36
1N4914 0.019 0.002 25 1N4931 0.029 0.002
1N4914A 0.040 0.002 1N4931A 0.060 0.002
1N4915 0.010 0.001 1 N4932 0.014 0.001
1N4915~ 0.020 0.001 , N4932.A 0.030 0.001
NOTE 1: "NOISE OENSITV MEASUREMENT METHOD

Voltage Variation (.::lVZ) and Temperature Coefficient.
Load Amplifier
All reference diodes are characterized by the "box method". This Ammeter Resistor
guarantees a maximum voltage variation (6VZ) over the specified
temperature range, at the specified test currant (I ZT), verified by
tests at indicated temperature points within the range. Vz is meas-
ured and recorded at each temperature specified. The i!i..VZ between DC Power Tnt
r-f>-
vr
Filter
fa'" 2.0 kHz
rr- True
RMS
LL
the highest and lowest values must not exceed the max 6 Vz given. Zener Volt
Supply BW = 1.4 kHz
This method of indicating voltage stability is now used for JEDEC Meter
registration as well as for military qualification. The former method
of Indicating voltage stability - by means of temperature coefficient-
accurately reflects the voltage deviation at the temperature ex-
tremes. but is not necessarily accurate within the temperature range Noise Density V out
because reference diodes have a nonlinear temperature relationship. (Volts per Square Root Bandwidth) =- - - - - -
The temperature coefficient, therefore. is given only as a reference. Overall Gain BW
Where BW "" Filter Bandwidth (Hz)
V out Output Noise (Volts RMS)
NOTE 2: Zener Impedance Derivation
The dynamic zener impedance. ZZT' is derived from the 60-Hz ac The input voltage and load resistance ere high so that the zener diode
voltage drop which results when an ac current with an rms value is driven from a constant current source. The amplifier is low noise
equal to 10% of the dc zener current, IZT. is superimposed on IZT' so that the amplifier noise is negligible compared to that of the test
A cathode-ray tube curve-trace test on a sample basis is used to en- TC zener. The filter bandpass is known so that the noise density
sure that the zener has a sharp ~md stable knee region. can be calculated from the formula shown_
1·110A
lN4933thru lN4937·
MR2271
FAST RECOVERY
POWER RECTIFIERS
. SUBMINIATURE SIZE, AXIAL LEAD MOUNTED
FAST RECOVERY POWER RECTIFIERS 50-600 VOLTS
1 AMPERE
. . . designed for special applications such as dc power supplies,

inverters, converters, ultrasonic systems, choppers, low RF interfer·
ence and free wheeling diodes. A complete line of fast recovery
rectifiers having typical recovery time of 100 nanoseconds providing
high efficiency at frequencies to 250 kHz. '
8
I I 0.100
--I I-- 0Tii7 0lA
Designer's Data for "Worst Case" Cond~tions
The Designers Data Sheet permits .the design of most circuits entirely from the
information presented. Limit curves - representing dey-ice characteristics boundaries-
are given to facilitate "worst case" design.
r-
1.10
0030
0.034
*MAXIMUM RATINGS
POLARITY MARK
Ratin'll Symbol 1N4933 1N4934 1N4935 MR2271 1N4936 1N4937 Unit (CATHODE)
Peak AepetltiveRaverse Voltage VRRM Volts
Working Peek Reverse Voltage VRWM 50 100 200 300 400 606
1.10
75 150 250 350 450 650 Votts
_'I"
VRSM
RMS Reverse Voltage .VR{RMS) 35 70 140 210 280 420 Volts
Average Rectified Forward Current '0 1.0 Amp
(Single phese, resistive toad,
TA=7sOC)
Non-Repetitive Peak Surge C.urrent IFSM 30 Am ..
(surge applied at rated load
conditions)
AJI JEDECdlmensions and notes apply
Operating Junction Temperature Range TJ -6510 +150 °c
Storage Temperature Range T stg -e5to +175 °c CASE 59
"THERMAL CHARACTERISTICS 00·41
Chillracteriflic
Tl'Iermal Aesistance,Junctionto Ambient
(TVPical Printed Circuit
Board Mounting)
"ELECTRICAL CHARACTERISTICS
Characteristic Symbol MI" Ty. Mox Unit
·Instantaneous Forward Voltage V, 1.0 1.2 Volts
(iF = 3.14 Amp, TJ = 1SOOC)
Forward Voltage V, 1.0 1.1 Volts
OF = 1.0 Amp. T A" 2SoCI MECHANICAL CHARACTERISTICS
-Raverse Current (rated de voltaga) TAB 2So C 'R 1.0 5.0 .A
TA-1000C
CASE: Void Free, Transfer Molded
50 100
FINISH: External leads are gold
'REVERSE RECOVERY CHARACTERISTICS
plated, leads are readily
Chlractaristic Symbol Min Ty. Mox Unit
Aevana Recovery Time
solderable
OF;' 1.0 Amp to
VR = 30 Vdcl {Figure 211
'u 100 200
POLARITY: Cathode indicated by
(IFM'" 15 AmI?, di/dt .. 10 A/~sI{Figurll"22) 150 300 Polarity band.
Rever. Recoverv Current IRM(REC) 1.0 2D Amp
.!IF "'.9Ampto VR ~30Vdcl {Figure 211
WEIGHT: 0.4 Gram (Approximately)
-lndicatesJEO~,C Registered Data for 1N493~Series
1-111
FIGURE 1 - FORWARD VOLTAGE FIGURE 2 - MAXIMUM SURGE

CAPABILITY
0 100
I I V .".,..
...... [".. IIII I I I I I I
",., Prior to surge. the rectitier I I
3D V i/
0
is oporatad such that TJ • 150oC;
- '- TJ = 250 C V wOO
to
"''' i"
each cycle of surge
0 / /'
~~ 7
0
TYPICAL j V MAXIMUM <",60
"" =
H-4J.
V/ ...~~
...
III ........
7.0
0
~~ 4ot--
""w
50
~~ 30 t--
A A
1----1., CYCLE
A ..... " r-r--r--
I
~
_ 2
§' 5.0 0
5 I I0 I I1III
~ I o I IIIII
~ 3.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I 1.0
...
:::>
I NUMBER OF CYCLES AT 60 Hz
~ 2.0
i~ II J
'"ffi
fl FIGURE 3 - FORWARD VOLTAGE
1.0
TEMPERATURE COEFFICIENT
z 4. 5
~ O. 7
z 4.0
< I 11
In O.5 3. 5
:!: I 3.0
o.3 I f; 2.5
~ 2.0 II
o.2 I ~ 1.5 TYPICAL RANGE
~ 1.0 L
ld.
~ O.5 L:t
0
8..0· 5 ~
o. I
-1.0
~ I--'
0.07 -1.5
-2.0
0.05 I -2 .5
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
1If. INSTANTANEOUS FORWARD VOLTAGE IVOLTS) iF. INSTANTANEOUS FORWARD CURRENT (AMP)

FIGURE 4 - FORWARD POWER DISSIPATION FIGURE 5 - FORWARD POWER
DISSIPATION
3.2 0
IIP~) -20- V Y
l-V' / ~
2.8
I 1--5. / 'IPK)=7 (IO
'IAV)
~~ESI~TIV~' /
0_ 'IAV) .
"'~
~:. 2.4
/
//. "/ V'
~~
~~ 2.0
V/ 1/ /'
INDUCTIVE LOAD) 8
4 / L L::: I ' L
ffi~ 1.6
/ / /.: V TJ~ 1500C 0
/.~ , / dc
~!l!
.... 0 1.2 // ~ 6 ~~ ./
>""
<w
~~ 2 ~V V TJ~ 1500C
~~ 0.8 ~ '/
0.4 ~~ ~ 8
l.....- ~ f"""
p ~F"'"'
~ 4
0"""'"
0.4 0.8 1.2 1.6 20 2.4 2.8 0.4 0.8 1.2 1.6 2.0 2.4 2.8
'FIAV). AVERAGE CURRENT lAMP) 'FIAV). AVERAGE FORWARD CURRENT lAMP)
1-112
MAXIMUM CURRENT RATINGS

FIGURE 6 - EFFECT OF LEAD LENGTHS. FIGURE 7 - EFFECT OF LEAD LENGTHS.
RESISTIVE LOAD RESISTIVE LOAD
,.£ 2. B " , , a: 2.5
5.... 2. -1/B" ........ RESISTI~~1~~ UCTIVE_

~
!;; ~~ ....... BOT~
'" r-...
-
4...... , .......... LEAJS TO H'EAT _ - ' - -
iii ~ 2.o "
.
'"
~
ii1
2.0 -~ ........ ..........
........
r-...
BOTH LEADS TO HEAT_
~~:H~~~ LENGTHS -
.
'"
=>
c
~
~~ ["-..
1.5~r-31B"
SINK WITH LENGTHS
AS SHOWN
........
--
'" 1.
6-3/;::-"
-'1- ....... r--... r......1 I"'--.... ......... r-...
~
~
2-L~
-- r...... "
r--... """- ~
r..... ....... r--.........
'"r'--- r--.
:zw 1. 5/B·;-.......
~ r--... t-.... ~ 1.0
'" ........... r--... "- '"
............. r...... ~ i'.........
ffi o.8 ffi
>
'"S 0.4
t--.. ~~
r-........: ~
>
'"
s 0, 5 =-'...... ~ ~
~
~~
~ ~
0
50 60 70 BO 90
TL, LEAD TEMPERATURE (DC)
100 110 120 130 140 '"""" 150
0
50 60 70 BO 90 100. 110 120
130
"
140 150
FIGURE 8 - 1/8" LEAD LENGTH. VARIOUS LOADS FIGURE 9 - 1/8" LEAD LENGTHS. VARIOUS LOADS
,.a: 2,B
I(PK) =7T (~ESISTlh/INDIUCTlvk)
,.
a: 2,B
.......... ,
S
!;;
2.4 ......... ........
......... ..........
I(AV) $
iii 2,4
...... ......... 2,.010
...... ~O
" "de
w
. .......... ,~
.
'"~ L""--. IO""i-..... t-....
'" ""-
-- --
~ 2.0 2.o ~
........ K r-... .....
"''" .....,,,,,,,-.....
=>
c I--I(PK) =20 ......
c ............ t'-.. ::-....
a:
~
1.6 10
.......... i'" 1.
61--1(AV) ............. ~ "-
'"
:z 1.2
~ .......... ~
~ 1.2 ............... ~
........... ....... -...;: --..::: ......
........
w
",. ..... ...... ~ ~
ffi O.B
~~
B
~
~"-
>
~ ~
,
<[
- 0,4 4
~ ~
} 0
50 60 70 BO 90 100 110 120
130 140
" 150
0
50 60 70 BO 90 100 110 120
TL, LEAO TEMPERATURE(DC)
130 140 150
FIGURE 10 - PRINTED CIRCUIT BOARD MOUNTING. FIGURE 11 - PRINTED CIRCUIT BOARD MOUNTING.
VARIOUS LOADS VARIOUS LOADS
1.4 , 1.4
........ I
1.2 r--... 1,2 ........
I""-....t-....
c
'"~
r......
...... t--.. <:
RESISTIVE·INOUCTIVE c
'" r-...... -.........: r-... "I---de
"""
LOAO
1.0 ~ 1.0
:5 a: ......... ....... ...... BJA =850 /W- I - - ~s: ,. !"-.. --.....;: ...... K BJA = 650C/W- I - -
~~ 0.8
....... ............... ...
~S 0.8
.......... ~
-. r- ......... ~ ..........
-,...,r......
1--...
..........
~~ r-......
~!E ....... ~
~~ ~.6 CAPACITIVE LOAD
~
:::-... r-. ><-
wW
~~ 0.6
CAPACITIVE LOAO
I(PK) = 2,0 10 5,0' ~ ~
"-
~B I(PK) = 5.0"- ~~
S ..
~
IIAV)- 10' , . / ~ ~......
~ 0.4 I(AV) 10 ....... ~ 0,4 20
~~
~
20 , --.;: ~ ~
0,2 , ...... 0, 2
~
,
o
50 60 70 80 90 100 110 120
130 140
.........
150
o
50 60 70 BO 90 100 110 120
130 140
"
150
1-113
FIGURE 12 - THERMAL RESPONSE FIGURE 13 - THERMAL RESISTANCE

1.0 80
i5 0.7
~ 0.5
f--JOTH LElosTo )EATSINl. ~
:::i
~ 0.3
LEAD LENGTH = 1/4" EaUAL LENGTH
1 LV
,./
tz '"~ 0.2
MAXIM1UM/
~
~~
. . . V' ./'V
(SEE NOTE 11
"'<.>
:~ O. 1 ./"
~~O.07
-E-~ 0.05
V V TYPICAL
~0.03 /
V V "
'"~ 0.02 /'
10
V ......... V
to-
0.0 1 o
0.05 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 200400 10002000 5000 o 1/8 114 3/8 1/2 5/8 3/4 7/8
I. TIME 1m,) LEAD LENGTH (INCHES)
NOTE 1 NOTE 2
FUL tp_
PPk
1----..----1
Ppk
TIME
DUTV CYCLE, 0 =tp/ll
PEAK POWER, Ppk, is peak of an
Data shown for thermal resistance junction-to-ambient (BJA) for the
mountings shown is to be used as typical guideline values tor preliminary
engineerillg or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR (JJA IN STILL AIR
LEAD LENGTH, L (IN}
To determine maximum junction temperature of the diode in a given situation,
1114 1,/2 I 314
MOUNTING
the following procedure is recommended METHOD 1/8 ROJA
I 65 72 82 92 c/w
The temperature of the case should be measured using a thermocouple placed
on the case at the temperature reference point (see Note 31. The thermal mass
2 7. 81 9t 101 °C!W
3 .0 °C!W
connected to the case is normaliV large enough so that it wilt not significantly
respond to heat surges generated in the diode asa result of pulsed operation once MOUNTING METHOD 1 MOUNTING METHOD 3
steady-state conditions are achieved. Using the measured value of TC, the junction
temperature may be determined by:
TJ=TC+""TJC
r'=-J t--'=i
w~
P. C. Board wilh
1-1/2" x 1·112" copper surface
where"" TJC is the increase in junction temperature above the case temperature.
It may be determined by: MOUNTING METHOD 2 ~LJ=3/8" rT
~:. II~
tlTJC"'Ppk 'ROJC 10+(1- 0)' r(tt +Ip)+r(tp) - r(ttlJ
where
rhl =normalized value of transient thermal resistance at time, t, from Figure
3, i.e.:
r (tl + tpl '" normalized value of transient thermal resistance at lime t 1';' Ip Vector pin mounting Board Ground -:
Plane
FIGURE 14 - THERMAL CIRCUIT MODEL

(For Heat Conduction Through The Lead,)
T A '" Ambient Temperature Res'" Thermal Resistance, Heat Sink to Ambient

ROSA TL'" Lead Temperature R8L = Thermal Resistance, Lead to Heat Sink
T C = Case Temperature A8J = Thermal Resistance, Junction to Case
TJ '" Junction Temperature Po = Power Dissipation
TAK-=- (Subscripts A and K refer to anode and cathode sides respectively.)
Values for thermal resistance components are:
AeL"" 11'PC/W/IN. Typically and 12S0C/W/IN Maximum
ROJ "" 1SOC/W Typically and 300CfW Maximum
The maximum lead temperature may be calculated·as follows:
TL"" 1500 -L\TJL
t'lTJL can be calculated as shown in NOTE 1 or it may be approximated
Use of the above model permits junction to lead thermal resistance for any
as follows:
mountingoonfigurationtobefound. For a given total lead length, lowest values
ATJl ~OJL. PF: PF may be formulated for sine-wave operation from
occur when one side of the rectifier is brought as close as possible to the heat
Figure 3 or from Figure 4 for square·wave operation.
sink. Terms in the model signify:
1-114
FIGURE 15 - FORWARD RECOVERY

TIME FIGURE 16 - JUNCTION CAPACITANCE
0.5 30
j
,.;::
w 0.3 -V~r<1.L
_ TJ<250C
~
w
20
~
~ TJ < 25°C
ffi o.2 / g t"-.. ............
o> /' ~
c:§ 10
1ll z
0:
Q
0:
V ~ 7. 0
........
~ O. 1
~
0:
~ a 5.0
~ 0.07
0.05
L"
V
3.0
"
0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 2.0 5.0 10 20 50 100
IF. FORWARO CURRENT (AMP) VR. REVERSE VOLTAGE (VOLTS)
TYPICAL RECOVERED STORED CHARGED DATA
FIGURE 17 - TJ = 25°C FIGURE 18 - TJ = 75°C

1.0 2. 0
IFM < 20 A
3 .3 1. 0 IFJ<201
w 0.5
w
.~
:;i
'" ./ ~ o.5
:..--- ""'~
13
~ o. 2
~~
./
o ~ v: ./ ....
t:; o. I ~ o. 2
~ t? ....... ... ..-
~ ./
0:
~ 0.0 5
10 A
~w o. I
> lOA
~ ~o::::'
~ loP ......
'\
\ 5.0A ~_ 0.0 5 5.0 A
g 0.0
:~ V--
1.0 A 6 :/ 1.0 A
0:0 I 0.0 2 £. ;;:::: ~ I
1.0 2.0 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100
di!dt lAMP!",) di!dt. (AMP!",)
FIGURE 19 - T J = 100"C FIGURE 20 - T J = 150°C

2.0
.3 1.0
IF~ < 20lA
w
~
5 o.5
V
~ ~V V
~ 0.2
v
.~ O. I ~ k' V
> 10 A .
8
~ 0.05 5.0A
<i. I,q V )
o
0.02 I..e: r::;:. v I\A
1.0 2.0 5.0 10 20 50 100
1-115
RECOVERY TIME
FIGURE 21 - REVERSE RECOVERY

CIRCUIT NOTE 3
Reverse recovery time is the. period which elapses from the

115Vac
60 Hz
10k
2W
.,
3n
3un
50W
diode, passesthru zero going negatively until the reverse current
25W NON· INDUCTIVE recovers to a point which is less than_10% peak reverse current.
UNIT current prior to the applicatkm of reverse voltage.
UNDER TEST
ent. Typical and maximum recovery time of all Motorola fast
+---~)A recovery power rectifiers are rated under a fixed set of conditions
1.0 Adc FROM
.,
In
CONSTANT
VOLTAGE SUPPLY
using IF '"' 1.0 A, VA '" 30 V. In order to cover all circuit
conditions, curves are given for typical recovered stored charge
versus commutation di/dt for various levels of forward current
RIPPLE" 3 mVrms MAX and for junction temperatures of 2So C, 7So C, 1000C, and
lOW
30 Vdc NON.INDUCTIVE C, lSo"C.
CONSTANT VOLTAGE 1.0,uF
SUPPLVo-:-+_ _~--,---,-_-+-____-+30::0:..:V-+_--o
current level just before commutation, the circuit commutation
Zout'" !Y2nMAX, di/dt, and the operating junction temperature. The reverse re-
MINIMIZE ALL LEAD LENGTHS
DC t02 kHz covery test current waveform for all Motorola fast recovery
PRE·AMP, P6000 PROBE OR EQUIVALENT
R2 - TEN·' W, 10 n.
1% CARBON CORE rectifiers is shown.
IN PARALLEL
Rl - ADJUSTED FOR 1.4 nBETWEEN
POINT 2 OF RELAY AND RECTIfiER TA" 25 ~lgoC FOR RECTIFIER
INOUCTANCE "" 38 ~H
FIGURE 22 - JEDEC REVERSE RECOVERY

CIRCUIT
.,
11
J:JII
From stored charge curves versus di/dt, recovery time It rr '
difdt ADJUST
T1 and peak reverse recovery current IIRMIAEC)) can be closely
T2 approximated using the following formulas:
120VAC 03 Q J1/2
60 Hz 'IPK) ADJUST OUT. 1" = 1.41 )( [ di/:t
1:1
RI" 50 Ohms
C' +
., IAMIAEC) '" 1.41 x [QA x dUdt] 1/2
R2 =2500hms
01'" lN4723 01
02" lN4001
03·IN093_
SCRI" MeR129·IO CURRENT
C'''O.5to50"F Tl" Vanac Adjusts I(PKI anddlldl VIEWING
C2 "<4000.uF T2 = 1:1 RESISTOR
1I '" 1.0 - 27 IIH T3= 1;1\10 trigger circuit)
FIGURE 23 - TYPICAL
REVERSE LEAKAGE FIGURE 24 - NORMALIZED REVERSE CURRENT
TJ=150DC
I
r-- - rVR =400 V
./
TJ,100DC
1
TJ = 75DC V
1
I
TJ = 25 DC
V
1 10-2
100 200 300 400 500 600 700 ~ ~ ~ W W M W ~ 100 lW I~ 1~ ~ lW1W
VR, REVERSE VOLTAGE (VOLTS)
TJ,JUNCTION TEMPERATURE (DC)
1N4997 thru 1N5003

1-116
2-1
2N ... JEDEC REGISTERED
DEVICE SPECIFICATIONS
2-2
2N 173 (GERMANIUM)
2N 174
(GERMANIUM)
2Nl100
2N1358,A
PNP germanium power transistors. Power dissipa-

tion and junction temperature ratings exceed those of
CASE 5 EIA registration.
(10-36)
MAXIMUM RATINGS
Rating Symbol 2N174 2N1100 2N1358 Unit

Collector-Sase Voltage VCS 80 100 80 Vdc
Emitter~Sase Voltage VES 60 80 60 Vdc
Emitter Current (Continuous) IE 15 15 15 Amp
Sase Current (Continuous) IS 4.0 4.0 4.0 Amp
Junction and Storage Temperature TJ,T stg -65 to +110 °c
Thermal Resistance, Junction to Case (iJC 0.5 °C/W
2-3
2N174, 2Nll00, 2N1358 (continued)
Chlracteristic Symbol Minimum Typical Maximum Unit
Collector-Base Cutoff Current ICBO j!.A
2N174 - 100 -
(VCB '" 2 yolts) 2NllOO
2N1358
-
-
100
100
-
200
Collector-Base Cutoff Current ICBO mA
(VEB = 1.5 Yolts, VCB = 80 yolts) 2N174 - 2.0 8.0
100 2NllOO - 2.0 8.0
80 2N1358 - 2.0 8.0
Emitter-Base Cutoff Current lEBO mA
(VEB = 60 yolts) 2N174 - 1.0 8.0
80 2NllOO - 1.0 8.0
60 2N1358 - 1.0 B.O
Collector-Base Cutoff Current I CBO mA
(V CB '" 80 Yolts, 71 0c) 2N174 -- - 15
100 2NllOO - 15
60 2N1358 - 4.0 6.0
(VE~ = 30 Yolts, 71°C) 2N1358 - 4.0 6.0
Collector-Emitter Voltage BV CES* Vdc
(IC = 300 mA, VEB = 0) 2N174 70 -- -
2NllOO
2N1358
80
70 -
--
Collector-Emitter Voltage BVCEO* Vdc
--
(Ic = 1.0 amp, IB = 0)
1.0 amp, IB = 0
2N174
2NllOO
55
65
-
-
300 mA, IB = 0 2N1358 40 - -
Floating Potential V EBF yolt
(IE = 0, VCB = 80 yolts) 2N174 -- - 1.0
lOO
80
2NllOO
2N1358 - -
0.15
1.0
1.0
Current Gain hFE -
(Ic = 1. 2 amp, VCB = 2 yolts) 2N1358 40 55 80
(IC = 5 amp, VCB= 2 yolts) 2N174 25 - 50
2NllOO 25 - 50
2N135B 25 35 -
(Ic = 12 amp, VCB = 2 yolts) 2N174 -- 20 -
2NllOO 20 -
Base-Emitter Voltage VBE Vdc
(Ic = 1. 2 amp, VCB = 2 yolts) 2N1358 - 0.35 0.5
(IC = 5 amp, VCB = 2 yolts) 2N174
2NllOO
-- 0.65
0.65
0.9
0.9
2N1358 - 0.65 0.9
Saturation Voltage VCE(sat) Vdc
(Ic = 12 amp, IB = 2 amp) 2N174
2NllOO
-- 0.3
0.3
0.9
0.7
2N1358 - 0.3 0.7
Common-Emitter
Cutoff Frequency fae kHz
(Ie = 5 amp, VCE = 6 yolts) 2N174
2NllOO
- 10 -
Common-Base
Cutoff Frequency fab kHz
(lE.= 1 amp, VCB = 12 yolts) 2N1358 100 - -
Rise Time ("on" Ie = 12 Adc, tr j!.s
IB = 2 Adc, VCE = 12 yolts) - 15 -
Fall Time ("off" IC = 0, tf j!.s
VEB = -6 Yolts, REB = 10 ohms) - 15 -
* In order to aYoid excessive heating of the collector junction, perform test by the sweep method.
2-4
2N174, 2Nll00, 2N1358 (continued)
CURRENT TRANSFER CHARACTERISTICS TRANSCONDUCTANCE CHARACTERISTICS

.2 12
",
'0
,/
V -". i--"
..,,'" .0 J
(j,
II · ~K
~ r-
" IO'C
I 1. 'l
'"
2S·C
80'~""
~
•
/I
~
_~O'C
I "'G ...... :7.

-"'~)'I:~
'/
i.. 4
I i
.I / j
//1/
'/
11 /~
rIJ ,/ ./
00 0.45 0.6 '.0
0.15 0.3 0.75 0.2 0.4 0.' 0 .•
Ville. lASE VOLTAGE (VOLTS)
POWER-TEMPERATURE DERATING CURVE

~ 210
r--..
!
~
180
150
--...
~ 120
............
~
is 90
.............
t 60 .............
~
.. 30
r--.......
.... 1'-....
~~ 0
20 40 60 90 .00 110
T C' case Temperature fe)
The maximum continuous power is related to maximum

junction temperature by the thermal resistance factor.
This curve has a value of 150 Watts at case tempera-
tures of 25'C and is 0 Watts at IIO'C with a linear relation
between the two temperatures such that:
allowable PI> = 110'0.5- Tc
2N174 AND 1358 2N1100

60
30
~3~ 20
Sm. 1m. 500~s 2501'S
....... f...-
Sm. I ... 500", 250!"
\ \. ~ ~ ~ k- r
20
~ , ""'" ~ ~ t:::: 100",

OR LESS
10
''\ ~ " ~~
lbo ".'
OR LESS- -
1'\ ~ ~
170.W~r I
hl
"\
POWI!R OISSIPATlON AT I\.
251tAIl TEMjRAyRE
""
I}I
,,
""'
r-
I
~
~
B
O. S
2
1
l70·WATT /
POWER1lISSIPATION AT
2SoC CASE TEMrERAjURE
'"/ /t--.
"""
de/"
--
'"t\. \ \
-\....
0.5 c 0.4 ,
T~
0.4
0.3
O.l lOO'V. 8 mA
TO IOV. SmA (2NIIOO ONLY)
0.2 -rrrll~~\m~EO O. 2 WITH BACK 81AS APPLIED
tR!LSE f~ ON~Yl ~ r- .\
(iULSE tURVjS ONYI't--
-\
O.I 0 O. I
o 10 20 lO 40 50 60 70 80 90 100
COUECTOtI-EMITTER VOLTAGE (VOLT$) COLLECTOR.£MITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate le- (Duty cycle of the excursions make no significant
Vell: limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2-5
2N176 (GERMANIUM)
2N669
PNP germanium power transistors for economical

power switching circuits and commercial grade power
amplifier applications.
CASE 11
(TO-3)
MAXIMUM RATINGS

Collector - Base Voltage VCB 40 Vdc
Collector-Emitter Voltage V CES 30 Vdc
Collector Current (Continuous) IC 3.0 Amp
Storage and Junction Temperature T J, Tstg -65 to +100 'c

Total Device Dissipation PD 90 Watts
(At 25'C Case Temperature)
Thermal Resistance BJC 0.8 'C/W

(Junction to Case)
2N669,2N176 SAFE OPERATING AREAS

gO-WATT
POWER DISSIPATION
-
25°C CASE ,MPfRATURE-
\ \ ~
\1\ r 5m,
OR LESS
2N176
2N669
=
-
The Safe Operating Area Curves indicate
Ie - VCE limits below which the device will
not go into secondary breakdown. Collector
load lines for specific circuits must fall
do within the applicable Safe Area to avoid
0.5 causing a collector·emitter short. (Case
D4
temperature and duty cycle of the excur-
OJ sions make no significant change in these
safe areas.) To insure operation below the
02 maximum TJ, the power-temperature de-
rating curve must be observed for both
steady state and pulse power conditions.
0.1
o 10 20 30 40 50
COLLECTOR-EMITTER VOLTAGE (VOLTS)
2-6
2N176, 2N669 (continued)
ELECTRICAL CHARACTERISTICS (TC= 2S0C unless otherwise noted)
Characteristic Symbol Minimum Typical Maximum Unit

Collector-Base Cutoff Current leBO - - 3.0 mA
VCB = 30 V, IE = 0
VCB = 2.0 V, IE = 0 - 50 - jJ.A
VCB =30V, IE = 0, TC = gaoC - - 20 mA

VEB = 10 V, Ie = 0 - - 2.0
Collector-Emitter Breakdown Voltage Vdc

Ie = 330 mA, RBE = 10 Ohms 2N176 BVCER 30 - -
2N669 BVCES 30 - -
Collector-Emitter Saturation Voltage VCE(SAT) Vdc
Ie = 3 A, IB = 300 mA - - 0.4
DC Forward Current Transfer Ratio hFE -

VCE =2.0V, Ie = 0.5 A 2N176 25 - -
2N669 75 - 250
Power Gain dB
OpE
Pout = 2 Watts, VCE = 12 V, Ie = 0.5 Amp,
f = 1 kHz, RS = 10 Ohms, RL = 26.6 Ohms 2N176 34 - 37
2N669 38 - -
Total Harmonic Distortion %
(under same conditions. of power gain) - - 5.0
Small-Signal Current Gain Cutoff Frequency fete kHz

VCE = 12 V, Ie = 0.5 Amp, f = 1 kHz ref 2N176 4.0 7.0 -
2N669 3.0 5.0 -
Small-Signal Forward-Current Transfer Ratio hfe
-
VCE = 2.0 V, Ie = 0.5 Amp, f = 1 kHz 2N176 - 45 -
2N669 - 90 -
Small-Signal Input Impedance hie Ohms
VCE = 2.0 V, IC = 0.5 Amp, f = 1 kHz 2N176 7.0 - 25
2N669 10 - 50
INPUT CURRENT versus EMITTER DRIVE VOLTAGE POWER-TEMPERATURE DERATING CURVE

(Both Types) (Both Types)
0'" .111
.,22
0... I
/
V .. ,
v: =2 ~lS /
_ 0.11
'\
I· .... /
'\
i U,
0.12
j
/
/
I'\.
! •.•
~ 0.01
0. .: ./
/ "
0.04 /
.... '\
••
•• k'"
~ u u u ~ u
' ... lMIHIIltTEI VOLT_ _IS)
u U U H •o 20 .. eo eo
'\
.00
2-7
2N 178 (GERMANIUM)
2N554
2N555
CASE 11
(TO-3)
~ PNP germanium power transistor for non-critical
power amplifier and power switching applications re-
quiring economical components.
MAXIMUM RATINGS
Rating Symbol 2N:178 2N554 2N555 Unit
Collector-Emitter Voltage VCER 30 16 30 Vdc
Collector-Base Voltage VCB 30 15 30 Vdc
Emitter-Base Voltage VEB 20 15 15 Vdc
Collector Current Ie 3.0 Adc

Total Device ,Dissipation @ TC = BO°C PD 10 Watts
Operating and Storage Junction T J , T stg -40 to +90 °c

Temperature Range
50
1\.
1\
""'
"-
1'\
o :0 IU I
,
r\
10o
TC. CASE TEMPERATURE (OC)
2N178, 2N555 SAFE OPERATING AREAS. 2N554

•
5 _An •
5
• POWER DISSIPATION AT
3D~ TEMPERATURE
•
3 3
'\ H ZN17.
I
I
2
•
'I'"
2N555
,..
......
I•
2
i ~,~~ ~ t>..... " I--

, =R'tISSIPATION AT
I:~ I: 300c CASE TEMPEIATUIE I---

"
Af--..
u .3
,2
•
D.
•0 20 30 . 50
,. •0 20 3D
COLUCTONMlml VOLTAGE (VOLTS)
..
COlLECTO_1TTElI VOlTACE (VOlT$)
The Safe Operating Area Curves indicate le- (Duty cycle of the excursions make no significant
VelD limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TI, the power-temperature
2-8
2N 178, 2N554, 2N555 (continued)
ELECTRICAL CHARACTERISTICS ;(TC = 250 C unless otherwise noted)
Characteristic I Symbol IMin I Typ IMax I Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV CER Vdc
(IC =330 mAdc, RBE = 100) 2N178 30 - -
2N554
2N555
16
30
-- -
-
Collector-Base Cutoff Current ICBO mA
(V CB =2.0 Vdc, IE = 0) 2N178 - 0.05 -
(VVB =30 Vdc, IE = 0) 2N178 - - 3.0
(V CB = 15 Vdc, ~ = 0) 2N554 - - 10.0
(V CB = 30 Vdc, IE = 0) 2N555 - - 20.0
(V CB = 30 Vdc, ~ = 0, TC = 90°C) 2N178 - - 20.0

(V BE = 10 Vdc, IC = 0) 2N178 - - 2.0
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = O. 5 Adc, VCE = 2.0 Vdc) 2N178 15 - 45
2N554 - 50 -
2N555 - 50
Collector-Emitter Saturation Voltage Vdc
VCE(sat)
(IC = 3.0 Adc, IB = 300 mAdc) - 0.6 -
SMALL-SIGNAL CHARACTERISTICS
Common-Emitter Cutoff Frequency f kHz
oe
(IC =O. 5 Adc, VCE = 12 Vdc, f = 1. 0 kHz ref) 2N178 5.0 - -
2N554 - 6.0 -
2N555 - 6.0 -
Small-Signal Current Gain
(IC =O. 5 Ad':, VCE = 2.0 Vdc, f = 1. 0 kHz ref) 2N178
hfe
- 30 -
-
2N554
2N555 -- 55
55
-
-
Input Impedance h. Ohms
Ie
(IC =O. 5 Adc, VCE = 2.0 Vdc, f = 1. okHz) 2N178 8.0 25 -
2N554 - 25 -
2N555 - 25 -
FUNCTIONAL TESTS
Power Gain GpE dB
(V CE = 12 Vdc, IC = O. 5 Adc, Pout = 2.0 2N178 28 - 33
Watts, f = 1. 0 kHz, RS= 10 Ohms,
2N554 20 35 -
2N555 25 35 -
RL = 26. 6 Ohms)
Total Harmonic Distortion %

(Under same conditions as power gain) 2N178 - - 5.0
COLLECTOR CHARACTERISTICS INPUT CURRENT versus INPUT DRIVE VOLTAGE

3.0 240
10
90 220
I I
I
~
~
70
.....
i1l' 200
180
VeE = 2 VOLTS J
! 2.0
50
~:::j 160
I
5 4
i 140
/
!.... 0
-
100-
I.... 120
, ~
!
::> 100
20 ~
1.0
f 80
/
.
~
·12 n<'l
.... ,/ !: 60
j: 8
,/
./
40
4
~
2 ~"
0 20
0 o ~
0 10 20 30 40 o 0.2 0040.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VeE. COLlfCTOR·EMIITER VOLTAGE (VOLTS) V. B• INPUT DRIVE VOLTAGE (VOLTS)
2-9
2N242 (GERMANIUM)
2N307, A
CASE1~
(TO_3lI1~
PNP germanium power transistors for general pur-
pose power amplifier and switching applications_
MAXIMUM RATINGS
Rating Symbol 2N242 2N307. 307A Unit
Collector - Base Voltage VCB 45 35 Volts
Collector-Emitter Voltage (RsE = 301'l) VCER 45 - Volts
Collector- Emitter Voltage VCEO - 35 Volts
Emitter - Base Voltage VEB - 10 Volts
Collector Current IC 5.0 5.0 Amp
Junction Temperature Range TJ -65 to ... 110 -65 to ... 110 °c

Collector Dissipation (at T C = 250 C) PD 106 106 Watts
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

Collector- Base Cutoff Current ICBO mAdc
(VCB = 2 Vdc) 2N307 - 0.5
(VCB = 25 Vdc) 2N307 - 5.0
2N307A - 2.0
(VCB = 1 Vdc, IE = 0, T C= 85 0 C) 2N242 - 5.0
Emitter- Base Cutoff Current lEBO mAdc

(VEB = 10 Vdc) - 2.0
Collector-Emitter Cutoff Current ICER mAdc

(VCE = 45Vdc, RBE =301'l) 2N242 - 5.0
(VCE = 25 Vdc, RBE = 30 I'l) 2N242 - 1.0
(VCE = 35Vdc, RBE =301'l) 2N307 - 15
2N307A - 7.0
Base - Emitter Voltage VBE Vdc

(VCE = 1. 5 Vdc, IC = 1. OAdc) 2N242 0.3 0.8
Collector - Emitter Saturation Voltage VCE(sat) Vdc

(IC = 2. 0 Adc, IB = 200 mAdc) 2N242 - 0.8
(IC = 0.2 Adc, IB = 20 mAdc) 2N307 - 1.0
(lC = 1. 0 Adc, IB = 100 mAdc) 2N307A - 0.8

(VCE = 12 Vdc, IC = 500 mAdc) 2N242 30 120
(VCE = 1 Vdc,.IC = 200 mAdc) 2N307 20 -
2N307A 30 -
Common Emitter Cutoff Frequency lae kHz

(VCE = 12 V. IC = 0.5 A) 2N242 5.0 -
2N307A 3.5 -
(VCE = 6 V. IC = 1 A) 2N307 3.0 -
Power Gain G" dB

(IC = 0.5 A. VCE = -14 V, RL = 301'l. 2N242 30
Rg=101'l)
2-10
2N277 (GERMANIUM)
2N278
2N173
2N1099
~
CASE 5
(TO-36)
i lIIl ~ PNP germanium power transistors for general pur-
pose power amplifier and switching applications. Pow-
er and temperature ratings exceed EIA registration.
MAXIMUM RATINGS
Rating Symbol 2N277 2N278 2N173 2N1099 Unit

Collector-Base Voltage VCB 40 50 60 80 Vdc
Emitter-Base Voltage VEB 20 30 40 40 Vdc
Emitter Current-Continuous IE 15 Adc
Base Current IB 4.0 Adc
Total Device Dissipation @T C = 25 0 C PD 170 Watts

Derate above 25 0 C 2.0 W/oC
Operating and storage Junction T J' T stg °c

Temperature Range -65 to +110

Thermal ReSistance, Junction to Case 9JC 0.5 °C/W
SAFE OPERATING AREAS
. 2N173 2N1099 2N277 2N278
..
50
•,
0
0 ,~
'm, 500,. 250,..s , .. 'm, 500 115 250 I ,,. , '00...
'"''
, .. ,... 500"., 'so ...
\ I\.: ~ ~ ~ ~ ~ :::: ~ ~ V~O:rE'ss
r"
lOoJ.lS 1001"
\ ~100".
'"'"'" t>--.:
~
OR LESS OR LESS OR""
, I" l'- l~ 1\ i' "~ ~ ~~ ~
I
,
4
,
1
,
170·WATT
"
/ J',.
POW£R DISSIPATION AT
250, CASE TE,MPWTj
~
,
170.W... JI
POWER DISSIPATION AT
"T CA'j TEMr'RAy" i)
"\
~
, 170·WATT
25"C CASE TEMPERATURE
d.
>-
~="'&rSSIPATlON AT
25"C CASE TEMPERATURE
t-...
~I\
1\'
JJ o. d. "
a.
a.: 1---1 1 1 "
t--- TO SOY 8 IlIA TOaDY, 8 IlIA TO SOW,B IlIA
WiTH BACK BIAS APP%I~ "-~
I - - J--. IPUj
HCI ~\ t-- yITH BACK ElIAS APPLIED tURVES jLYl
I-~\
2 wnH 81M APPLIED
1 (FORPULSECORVESOf'Ilj'_ FOIl 'IULS' fU""I' allLt -
a. I-
0 10 20 30 40 so 60 70 0 10 20 30 40 50 60 10 80 90 1000 10 20 30 40 '00 10 20 30 40 50
COWCTOUMITTER VOlTAGE MIlTS) COlLECTOR.£MIT1'ER VOLTAGE (VOlT$) coutcTOR.£MITT£R VOLTAGE (VOLTS) COWCTOft-EMITTtR VOLTAGE (VOlTS)
The Safe Operating Area Curves indicate Ie - (Duty cycle of the excursions make no significant
V CE limits below which the device will not go. into change in these safe areas.) To insure operation
2-11
2N277, 2N278, 2N173, 2Nl099 (continued)
ELECTRICAL CHARACTERISTICS ITe = 25 0 e unless otherwise noted)

Characteristic Symbol Minimum Typical Maximum Unit
Collector-Base Cutoff Current I CBO /LA
VCBO = 2V - 100 -
Collector-Base Cutoff Current ICBX rnA

VEB = 1.5 V, VCB = 40 V 2N277 - 2.0 8.0
50 2N278 - 2.0 8.0
60 2N173 - 2.0 8.0
80 2N1099 - 2.0 8.0
Emitter-Base Cutoff Current lEBO rnA

VEBO = 20 V 2N277 - 1.0 8.0
30 2N278 - 1.0 8.0
40 2N173 - 1.0 8.0
40 2N1099 - 1.0 8.0
Collector- Base Cutoff Current I CBO rnA

VCSO = 40 V, 71°C 2N277 - - 15
50 2N278 - - 15
60 2N173 - - 15
80 2NI099 - - 15
Collector-Emitter Voltage BVCES* Vdc

IC = 300 rnA, VEB = 0 2N277 40 - -
2N278 45 - -
2N173 50 - -
2N1099 70 - -
Collector-Emitter Voltage BVCEO* Vdc
Ie = 1 Amp, IB = 0 2N277 25 - -
2N278 30 - -
2N173 45 - -
2N1099 55 - -
Floating Potential Vfl volt
IE = 0, VCB = 40 V 2N277 - 0.15 1.0
50 2N278 - 0.15 1.0
60 2N173 - 0.15 1.0
80 2N1099 - 0.15 1.0
Current Gain hFE -

Ie = 5 Amp, VCB = 2V 35 - 70
Ie = 12 Amp, VCB = 2V - 25 -
Base- Emitter Voltage VBE Vdc
Ie = 5 Amp, VCB = 2V 2N277 - 0.65 -
2N278 - 0.65 -
2N173 - 0.65 -
2N1099 - 0.65 0.9
Saturation Voltage Vdc

VCE(SAT)
Ie = 12 Amp, IB = 2 Amp 2N277 - 0.3 -
2N278 - 0.3 1.0
2N173 - 0.3 1.0
2N1099 - 0.3 0.7
Common-Emitter Current Amplification f kHz

ae
Cutoff Frequency
Ie = 5 Amp, VCE = 6V 0.3 10 -
Rise Time tr /Ls

"on" Ie = 12 Adc, - 15 -
IS =2 Adc, VCE = 12 V
Fall Time tf /LS

"off" IC = 0, - 15 -
VES = 6 V, REB = 10 Ohms
* To avoid excessive heating of the collector junction, perform these tests with the sweep method.
2-12
2N277, 2N278, 2N173, 2Nl099 (continued)
POWER· TEMPERATURE DERATING CURVE INPUT CHARACTERISTICS

~ 210 0.6
~ 180
...............
~
............
.~ 120
150
............
.......... 0.5
~
~
90
60
-..... ............ J
&. 30
r-.... c;;-
0.4 I
P-lb 0
20 40 60
T C' Case Temperature (oC)
80 100 110
""
IX
""c..
:E
S
....z
.... JI
'1
IX
'"
::>
u
....
0.3
BO°C .... /, J
~ I 'I
25°C .....
~ I
The maximum continuous CD
0.2
~V
..: WC -....,
power is related to maxi-
mum junction temperature ~
by the thermal resistance
factor.
0.1
~V
/: ~ V
This curve has a value of
150 Watts at case tempera-
tures of 25°C and is 0 Watts
at 110°C with a linear rela-
tion -between the two tem-
peratures such that:
0
o 0.2
- t...:::: ~ io""
0.4 0.6 O.B 1.0
VRE' BASE -EM ITTER VOLTAGE (VOLTS)
allowable Pn = 11 0° - Tc
0.5

12 12
"",
/ ./
10 V / / 10 J
)~ ~ ./
~
c;;-
)'1
c;;-
....
....
IX
c.. B ~ I'... ~ 8O'C- - ....
....
IX
c..
~If
:E
S
....z / )< V' r---- 250C :E
S
....z
....
h '/
....
IX
IX
6
J/ I" _400CI IX
IX 6 J ,/,
::>
u
IX
....u
0
~ u
::>
IX
....u
0
VJ /
~ # ~
....
/j r.t BO°C
/ r ~2SoC
4 4
0
u
..2
II 0
u
~
2 //I 2
V / V-- _40°C
,ru '/ V
VV/
~
o "
0 o
o 0.1 0.2 0.3 0.4 0.5 0.2 0.4 0.6 0.8 1.0
I•• BASE CURRENT (AMPERES) VBE• BASE·EMITTER VOLTAGE (VOL TS)
2-13
2N297 A (GERMANIUM)
CdE~
PNP germanium power transistor for military and
industrial power switching and amplifier applications.
Operating temperature range and- collector dissipation
(TO-3) rating exceeds military specifications.
MAXIMUM RATINGS

Collector-Base Voltage VCB 60 Vdc
Collector-Emitter Voltage VCES 50 Vdc
Collector-Emitter Voltage VCEO 40 Vdc
Emitter-Base Voltage VEB 40 Vdc
Amp
Emitter Current ~ 5.0
Operating Temperature Range TJ -65 to .. 110 DC
Collector Dissipauon at 25 DC PD 85 watts

Case Temperature
(8JC = 1 DC/w max)
POWER·TEMPERATURE DERATING CURVE
100
"
"'"
"~'" I'"
"
o
o 20 40 60 80
T C' Case Temperature (oC)
"" 100 110
2-14
2N297 A (continued)
ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise notedj
Chancterlstic Symbol Minimum Maximum Ualt
DC Current Transfer Ratio hFE 40 100 -
VeE '" 2V
Ie= 0.5 Adc
DC Current Transfer Ratio h
FE
. .20 - -
VeE = .2 V
Ie= 2.0 Ade
Small-Signal Current Transfer Ratio fue 5.0 - kHz
Cutoff Frequency
VeE = 14 Vde
Ie = 0.5 Amp
Emitter-Base Cutoff Current lEBO - 3.0 mAde
VEB = 40 Vde
IC = 0
Collector"Base Cutoff Current leBO - 200 /LAde
VCB = 2 Vde
IE = 0
Collector-Base Cutoff Current leBO - 3.0 mAde
VeB = 60 Vde
IE = 0
Base Current IB 5.0 12.5 mAde
VeE '" 2 Vdc
Ie= 0.5 Adc
-'
Base Current IB - 100 mAde
VCE = 2 Vde
Ie= 2Ade
Emitter-Base Voltage VEB - 1.5 Vde
VCE '" 2 Vdc
IC = 2 Adc
Floating Potential Vfl 0.18 Vdc
VCB = 60 Vde
(Voltmeter input resistance
= 10 Megohm min)
Collector-Emitter Saturation Voltage VCE(SAT) 1.0 Vde
Ie= 2 Adc
IB = 200 mAdc
Collector-Emitter Voltage BVCEO 40 - Vde
Ie= 300 mAde
IB = 0
Collector-Emitter Voltage BVCES 50 - Vde
IC = 300 mAdc
VEB = 0
High-Temperature Operation
TC = +71°C min
Collector Cutoff Current leBO - 6.0 mAde
VCB = 30 Vde
IE = 0
2N307 (GERMANIUM)
2N307 A For Specifications, See 2N242 Data.
2-15
2N319 thru 2N321 (Germanium)
CASE 31(1) \ . PNP germanium transistors for audio amplifier

(TO-S) ~ and low-frequency switching applications.
Base connected to case
MAXIMUM RATINGS

Collector-Bue Voltage Vcs 25 Vdc
Emitter-Due Voltage VEB 5.0 Vdc
Collector Current Ie 500 mAdc
Junction and Storage Temperature T J' Tstg -65 to + 100 °C
Power DlII81patlon at 25°C Ambient PD 225 mW
ELECTRICAL CHARACTERISTICS IT A = 250 C unless otherwise noted)
Characteristics Symbol Min Max Unit
Collector Cutoff Current ICBO

VCB = -25 Vdc, ~ =0 - 16 IIAdc
Emitter Cutoff Current

~BO
VEB = • 15 Vdc, \: =0 - 10 IIAdc
Collector-Emitter Voltage BVCER

\: = 0.6 mAde, RaE =10 K 20 - Vdc
DC Current Gain hFE

\: =20 mAdc, VCE = -1 Vdc
2N319
2N320
25
34
42
65
-
2N321 53 121
DC Current Gain hFE
\: .. 100 mAde, VCE .. -1 Vdc
2N319
2N320
23
30 --- -
2N321 47
Base Jnput Voltage VBE mVdc
VCE = -1 Vdc, \: .. 20 mAde 180 320
Qatput Capacitance; Input AC Open Circuit Cob

=
VCS -5 Vdc, ~ = 1 mAde, f = 1 MH~ - 35 pF
Frequency Cutoff fab

VCS =-5 Vdc, ~ .. 1 mAdc
2N319 1.0 - MHz
2N320 1.5 -
2N321 2.0 -
2-16
2N322 thru 2N324 (GERMANIUM)
2N508
PNP germanium transistors for audio driver and low

power output service in entertainment equipment.
CASE 31(1)
(TO-S)
MAXIMUM RATINGS

Emitter-Base Voltage VEB 5.0 Vdc
Collector Current IC 500 mAdc
Junction and Storag.e Temperature T J , T stg -65 to + 100 °c
Power Dissipation at 25°C Ambient PD 225 mW
ELECTRICAL CHARACTERISTICS (TA; 25 0 C unless otherwise noted)

VCB ; -16 Vdc, ~ ; 0 - 16 /LAde
Emitter Cutoff CUrrent ~BO

VEB ; -3 Vdc, IC; 0 - 16 /LAde
Collector-Emitter Voltage BV CER
IC ; 0.6 mAdc, R BE; 5 K 18 - Vdc
DC Current Gain hFE
VCE ; -1 Vdc, IC; 20 mAdc
2N322 34 65 -
2N323 53 121
2N324 72 198
2N508 99 198
Base Input Voltage VBE

VCE ; -1 Vdc, IC; 20 mAde 180 320 mVdc
Output Capacitance; Input AC Open Circuit Cob

VCB ; -5 Vdc, IE; 1 mAde, f; 1.MHz - 35 pF
Frequency Cutoff
VCB ; -5 Vdc, ~; 1 mAdc fa-b
2N322 1.0 - MHz
2N323 1.5 -
2N324 2.0 -
2N508 2.5 -
2-17
2N331 (Germanium)
PNP germanium transistor for audio range amplifier

and switching service in military equipment. Have col-
CASE 31(1) lector dissipation and storage temperature ratings sig-
(TO·S) nificantly higher than those of the military specification
All leads isolated (see maximum ratings table below).
MAXIMUM RATINGS

Collector-Base Voltage VCB 30 Volts
Emitter-Base Voltage VEB 12 Volts
storage Temperature Tstg -65 to + 100 °c
Collector Dissipation at T A = 25°C PD 75 mW

(MIL-S-19500!4C
(Derate 1.25 mW;oC above 25°C)
Collector Dissipation at TA = 25°C PD 200 mW
(JAN 2N331)
ELECTRICAL CHARACTERISTICS (TC = 2S o C unless otherwise noted)

(VEB = -12 Vdc, IC = 0) ~BO ,..Adc
- 10
Collector Cutoff Current ICBO "Adc
(VCB = -30 Vdc, ~ = 0)
- 10
Small-Signal Open-Circuit Output Admittance hob "mho
(V CB = -6 Vdc, ~ = 1.0 mAdc, f = 1 kHz)
- 1.0
Small-Signal Short-Circuit Input Impedance hib Ohms
(VCB = -6 Vdc, ~ = 1.0 mAdc, f" 1 kHz)
- 50
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
(VCE = -6 Vdc, IC" 1.0 mAdc, f = 1 kHz)
lye -
30 70

Transfer Ratio Cutoff Frequency fab MHz
(VCB = -6 Vdc, ~ " 1 mAdc) 0.4 -
Output Capacitance Cob pF
(VCB = -6 Vdc, ~ = 1 mAdc) - 50
Noise Figure NF dB
(VCB = -6 Vdc, ~ = 1 mAdc, RS" 1000, ohms,
f = 1 kHz, f-Al Hz ) - 20
2-18
2N331 (continued)

220
200 ,
JAN ~N331
~ ~
180
f?!
I- 160
'\ \ (he = 0.25°C/mW(max)
~
::;
::! 140 I" \
i!.
~ 120
(hA = 0.375°C/mW(max)
r\. \
'\ \.. \
~ 100
~
CI 80
'\ \
\
~
A.
,;
60
40
20
" ",\
'\ ~
o0 10 20 30 40 50 60
TA • AMBIENT TEMPERATURE (OC)
70 80
"
90. 100
2-19
2N350A (GERMANIUM)
2N351A
2N376A
PNP germanium power transistors for economical
CASE1~
power switching applications and for power amplifiers
requiring up to 4 watts of output power at relatively
~
(TO-3)I low distortion.
MAXIMUM RATINGS

Collector Dissipation Po 90 Watts

at 25'C mounting base temperature
Collector Junction Temperature TJ -65 to +100 ·C
Thermal Resistance 9JC 0.8 'C/W

(Junction to Case)
CURRENT GAIN versus POWER TEMPERATURE

COLLECTOR CURRENT (COMMON EMITTER) SAFE OPERATING AREAS DERATING CURVE
100 90
\ "-
V2N376A
211376A
2ft351A
\ ......... ~
\ 5ms _
OR liSS \
"\'
, ~
2N350A
Ci \
/"
2N351A
...... \
~\
./
)( \ \
/"\ [\\ VeE.2 VOLTS
90·WATT
POWER DISSIPATION
~'~r\.
\,
250C CASf TEMPERATURE
"- '~. de "

"\.
2N3!10A ... ~ I"-,~

'\
20
r-. ~
0.2
I 2 3 4 !I
0.1
0 10 20 30 40 ~
o
0 W ~ ~ 90
\ ~
COLLECTOR CURRENT (AMPERES) COU£CTOR'[MlmR VOLTAGE (VOLTS) MOUNTING BASE TEMPERATURE (OC)
The Safe Operating Area Curves indicate Ic- (Duty crcle of the excursions make no significant
V CD limits below which the device will not go into change In these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum T;r, the power-temperature
2-20
2N350A, 2N351 A, 2N376A (continued)
ELECTRICAL CHARACTERISTICS (at mounting base temperature 25°C ± 3°C.)
GENERAL Symbol Minimum Typical Maximum Unit

Collector Cutoff Current I CBO
VCB ~ 30 V - - 3.0 rnA
VCB ~ 2 V - 50 - /lA
VCB~30V, T ~ 100·C - - 30 rnA
Emitter Cutoff Current lEBO

VEB ~ 10 V - - 2.0 rnA
Collector Breakdown Voltage. BVCES

IC ~ 1 A (RBE =10 Q) 40 - - Vdc
Ie= 330mA, RBE =
0
(This test should be made
under dynamic conditions only)
ELECTRICAL CHARACTERISTICS (at mounting base temperature 25°C ± 3°C.)

COMMON EMITTER 2N350A 2N351A 2N376A Unit
Sym Min Typ Max Min Typ Max Min Typ Max
Power Gain (± 0.5 db) GpE dB
Pout ~ 4 Watts, VCE ~ 12 V,
IC ~ 0.7 A, f ~ 1 kHz
30 - 33 32 - 35 34 - 37
Total Harmonic Distortion

under same conditions as power gain
- - 7.0 - - 7.0 - - 7.0 %
DC Forward Current Gain hFE

VCE ~ 2 V, IC ~ 0.7 A 20 - 60 25 - 90 35 - 120
Current Gain Frequency Cutoff fae kHz
VCE ~ 12 V, IC~0.7A,
f ~ 1 kHz ref
5.0 - - 5.0 - - 5.0 - -
Small-Signal Forward Current Gain hfe

f ~ 1 kHz, VCE ~ 2 V, IC ~ 0.7 A - 30 - - 45 - - 60 -
Small-Signal Input Impedance h.ie Ohms

f~lkHz, VCE~2V, IC~0.7A 5.0 - 17 6.0 - 20 7.0 - 25
Collector Saturation Voltage VCE(SAT) Vdc

IC ~ 3 A, IB ~ 300 rnA - 0.8 1.75 - - - - - -
BasecEmitter Voltage VBE Vdc

IC ~ 3 A, IB ~ 300 rnA - 1.0 2,00 - - - - - -

IC ~ 4 A, IB ~ 400 rnA - - - - 0.8 1.75 - - -
IC ~ 4 A, 113'~ 400 rnA - - - - 1.0 2.00 - - -
IC ~ 5 A, IB ~ 500 rnA - - - - - - - 0.8 1.75

IC ~ 5 A, IB ~ 500 rnA - - - - - - - 1.0 2.00
2-21
2N350A, 2N351 A, 2N376A (continued)
OUTPUT CURRENT versus INPUT CURRENT verSU$

EMITTER·DRIVE VOLTAGE EMmER·DRIVE VOLTAGE
5.0 200
4.5 II
I 1I 110
/
2N!7'A~
'- / / I
2N!50 A}
2N!!!1 A ~ /
/ J '/ ~ 120
2N!7' A
'-..j
2N!5IA
'- / // ~ /
I '// '-2N!50A
ii3 10
I
Vh' ! V
fA v /
,
1.0 40
.5
~~ VCE = 2 VOLTS
/ VCE' 2 VOLTS
o ~ o ....... /
o .2 .4 .6 .1 1.0 1.2 1.4 1.11 1.1 o .2 .4 .• .1 1.0 1.2 1.4 1.6 1.8
VIE' BASE TO EM IlTER VOLTAGE (VOLTS) VIE' BASE TO EMITTER VOLTAGE (YOLTS)
2N375 (GERMANIUM)
2N618
2N1359
2N1360
2N1362 thru 2N1365
CASE~
(TO-3)
pose switching and amplifier applications.
MAXIMUM RATINGS
Rating 2N1359 2N375 2N1362 2N1364 Unit

Symbol 2N1360 2N618 2N1363 2N1365
Collector-Emitter Voltage VCES 40 60 75 100 Vdc
Collector Current-Continuous IC 3.0 Adc

Peak 10
Total Device Dissipation @ T C = 250 C PD 106 Watts

Operating and Storage Junction T J' T stg °c

Cha racteristic Symbol Max Unit

Thermal Resistance, Junction to Case 6JC 0.. 8 °C/W
2-22
2N375, 2N618, 2N1359, 2N1360, 2N1362 thru·2N1365 (continued)
ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)
Characteristic TJPls S,mbDI Minimum TJPlcal Maximum Unit

Collector-Base Cutoff Current 2N1359, 2N1360 ICSO rnA
(V CB = 40 V, IE = 0) -- -- 3,0
(V CB = 50 V, IE = 0) -- -- 20.0
(VCS = 60 V, IE " 0) 2N375, 2N61B -- -- 3.0

(VCS" BO V, IE " 0) -- -- 20.0
(V CS =75V, IE = 0)
(VCS" 100 V, IE" 0)
2N1362, 2N1363 --
--
--
--
3.0
20.0
(VCS" 100 V, IE " 0)

(VCS" 120 V, IE " 0)
2N1364, 2N1365 ---- --
--
3.0
20.0
Collector-Sase Cutoff Current

at Tc " +90°C ICSO -- -- 20 rnA
VCS = 1/2 SV CES rating
Emitter-Sase Cutoff Current

(VES " 12 V, Ie " 0) IESO -- -- 0.5 mA
(VES " 25 V, IC = 0) 2N1359, 2N1360 -- -- 20

(VES = 50 V, IC = 0) 2N1362, 2N1363 -- -- 20
(VES = 60 V, IC = 0) 2N1364, 2N1365 -- -- 20
Collector -Emitter Sreakdown

Voltage Vdc
IC = 500 mA, VES = 0) 2N1359, 2N1360 SV CES 40 -- --
------ --
2N375, 2N618 60
2N1362, 2N1363 75 --
2N1364, 2N1365 100 --
DC Current Transfer Ratio
(V CE = 4 V, IC = 1. OA) 2N1359, 375, 1362, 64
hFE
35 55 90
--
2N1360, 61B, 1363, 65 60 90 140
(VCE = 4V,Ic = LOA) 2N1359,
2N1360,
375, 1362,
61B, 1363,
64
65
15
20
22
35
----
Transconductance mhos
(VCE = 4 V, IC = LOA) 2N375 gFE O.B 1.25 2.2
2N6lB 1.0 1.6 2.5
2N1359, 2N1362, 2N1364
2N1360, 2N1363, 2N1365
0.8
1.0
1.25
1.6
----
Frequency Cutoff f kHz
(VCE = 4
(VCE = 4
V, IC
V, IC
= 1 A)
" 1 A)
2N375
2N618
Ole
5.0
5.0
8.5
8.5
----
(V CE = 4 V, IC = 3 A) 2N1359, 2N1362, 2N1364 7.0 10 --
(VCE = 4 V, Ie = 3 A) 2N1360, 2N1363, 2N1365 5.0 8.5 --
Collector Saturation Voltage VCE(sat) Vdc
(Ie = 2.0 A, Is = 200mA) 2N1359, 375, 1362, 64
2N1360, 618, 1363, 65
---- 0.4
0.3
1.0
0.8
Sase-Emitter Drive Voltage VSE Vdc

(Ie = 2.0A, IS " 200 mAl 2N1359, 375, 1362, 64 -- 0.7 --
2N1360, 61B, 1363, 65 -- 0,6 --
Collector-Emitter Punch-
Through Voltage V ESF Vdc
------
(VCS = 50 V, IC = 0) 2N1359, 2N1360 -- 1.25
(VCS = 100 V, IC = 0) 2N1362, 2N1363 -- 1.25
(VCS = 120 V, IC " 0) 2N1364, 2N1365 -- 1. 25
2-23
2N375 (continued)
120 The maximum continuous power is
~
;;
related to maximum junction tempera-
! 110
.....
I'..... ture, by the thermal resistance fac-
tor. For d. c. or frequencies below
~
100
.~
.~
80
" 25 cps the transistor must be operated
within the constant Pn = Vc x Ic
is
.
. '"
60
40 '" '" , hyperbolic curve. This curve has a

value of 106 Watts at case tempera-
tures of 250 C and is 0 Watts at 110De
20
..... , with a linear relation between the two
temperatures such that
Po allowable = 1100 - Tc
20 40 60 80 100 110 0.8
Te' Case Temperature fC)
BASE-EMITTER VOLTAGE versus COLLECTOR CURRENT CURRENT GAIN versus COLLECTOR CURRENT
140 r--...,..--,......-..,.---,---,......-...,..-......,
0:;
1.5
Ve~ = 2 vi
~ 120 t---f~-+.--+--+---+--+--i
/2NI3~0
0
...
~
z \
'"~ ~ 100 1----+-~.t_--1 2N618 --I---+---i
0
>
... ~ 2N1363
...'" III I"' 2N1365
~~
~
:i
~ 0.75
(I)
80
60 1---~~-~--+---:~~-+--4--~
'''"'
"";.,
CD
,:
2NI359~~ .......................
40 -·2N375 Y ............
2N1362
2N1364
I --~
! -- __
20
o 0~--~--~--~----~--~----~~
o 0.5 1 1.5 2 2.5 3.5 0.5 1 1.5 2 2.5 3.5
Ie, COLLECTOR CURRENT (AMP) Ie, COLLECTOR CURRENT (AMP)
2N1362,2N1363 SAFE OPERATING AREAS 2N375, 2N618
20 20
M~X PEA~ ~AxlpEA~ I
Im~ !
~~s
I I
Ie 5ms Ims I
I
5ms 5bo
./ \
e
1\ II .A'~I
10 10
250~s 250~s
, ,
, ,
I'\. ...-- OR LESS
'\. \.\ OR LESS- "'\. ~
"- \ \
'\. "- \\ 5
4 \ \. \l\ 4
I\, \..
0::
::I! \ \ "- \. ~\ 0::
I'>.. 1\ \ \\
,coy
3 ::I! 3
'->
$
\
\ I~ ~
$ ........ ......... '\
t-
....
Z
2 I, "'"
..... ...a:
t-
Z
2 Ie MAX CONT. /
V\ t.....
'"'"::>u
'"0
I-
...
....
U 90.wL ~
............
N t"
'"::::>
'-'
a:
0
.........
t-
U
9LJT V ~~ '" ~ i"'-
...
0
POWER DISSIPATION
25°C CASE TEMPERATURE ... 0
POWER DISSIPATION
25°C CASE TEMPERATURE
......
u '-'
0.5 / ....... 0.5 "- .........
0.4 de / I"'-.. 0.4 J{
0.3
"r-.., I "'\
0.3
I
0.2 TO 75V, 3 mA
0.2
~ ~
T090V,3mA - WITH BACK BIAS APPlI=i=
WITH BACK BIAS APP~~ (PULSE CURVES ONLY)
(PULSE CURVES ONLY)
0.1 L J 1 0.1 I I III
o 10 20 30 40 50 60 70 80 o 5 10 15 20 25 30 35 40 45 50 55 60 65
COLLECTOR·EMITTER VOLTAGE (VOLTS) COLLECTOR·EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate I c - (Duty cycle of the excursions make no significant
V CE limits below which the device will not go into change in these safe areas.) To insure operation
2-24
2N3 76 A(GERMANIUM)
For Spe~ifications, See 2N350A Data.
2N378 thru 2N380(GERlt\ANIUM)

2N459,A
CASEll~.·
.. PNP germanium power transistors for general pur-
(10-3)1 ~ pose power amplifier and sWitching applications.
MAXIMUM RATINGS
Rating Symbol 2N378 2N379 2N380 2N459 2N459A Unit

Collector-Emitter Voltage VCEO 20 40 30 60 60 Vdc
Collector-Emitter Voltage VCEX Vdc

(VBE = 1. 5 V) 40 80 60 - -
(VBE = 1.0 V) - - - 105 105
Collector ..Einitter Voltage VCES - - - 70 70 Vdc
Collector-Base VOltage VCB - - - - 105 Vdc
Emitter-Base Voltage
-
VEB - - - 10 25 Vdc
Collector Current. IC 5.0 Adc

Operating Junction TJ -65 to +110 °c
Temperature Range
Total Device Dissipation @T C = 25° C PD 106 Watts
ELECTRICAL CHAR~CTERISTICS (TA':' 25°C unless otherwise notedl

Characteristic Symbol I Min IMax I Unit
OFF CHARACTERISTICS
collector-Emitter Breakdown Voltage BV CEO Vdc
(IC =100mAdc) 2N378 20 -
2N379 40 -
2N380 30 -
2N459,2N459A 60 -
Collector Cutoff Current ICEX mAde
(VCE =40 Vde, VBE(off)= 1.5 Vdc) 2N378 - 10
(VCE = 60 Vde, VBE(off) = 1.5 Vde) 2N380 - 10
(V CE =80 Vde, VBE(off) = 1.-5 Vde) 2N379 - 10
(VCE= 105 Vde, VBE(off) = 1. 5 Vde) 2N459 - 10
(VCE = 105 Vde, VBE (off) = 1. 0 Vde) 2N459A - 10
Collector ·Cutoff Current ICBO mAdc

(V eB = 25 Vdc) - 0.5
(V CB = 25 Vdc, TC = 85°C) - 7.5
Emitter Cutoff Current lEBO mAdc

(VBE = 10 Vdc) 2N380
2N459
-- 1.5
2.0
(VSE = 25 Vdc) 2N459A- - 2.0
2-25
2N378, thru 2N380 2N459. 2N459 A (con.tinued)
ELECTRICAL CHARACTERISTICS (continued)
I Characteristic Symbol Min I Max I Unit

ON CHARACTERISTICS
(IC = 2.0 Adc, V CE = 2.0 Vdc) 2N378 40 80
2N379,2N459 20 70
2N380 30 70
2N459A 40 70
(IC = 5.0 Adc, V CE = 2.0 Vdc) 2N459A 20 -
VCE(sat)
(IC = 2.0 Adc, IB = O. 2 Adc) 2N378-2N380,2N459 - 1.0
2N459A - 0.3
Base-Emitter Voltage Vdc
VBE(on)
(IC =2.0Adc, VCE =2.0Vdc) 2N378 - 1.6
2N379, 2N459, 2N459A - 1.3
2N380 - 1.0
DYNAMIC CHARACTERISTICS
Common-Emitter Cutoff Frequency f kHz
(Ie
(IC = 1.0Adc, VCE = 2.0 Vdc) 2N378-2N380,2N459 5.0 -
(IC =2.0Adc, VCE =2.0Vdc) 2N459A 5.0 -
2-26
2N2171
CASE31m\
(TO-S)
PNP germanium transistors for small-signal audio
amplifiers, Class B push-pull output stages and medium-
speed switching circuits.
MAXIMUM RATINGS
Collector-Emitter Voltage (R BE = 10K) VCER

25
Volts
Collector Current IC 400 mA
Junction Temperature TJ -65 to +100 °c
Collector Dissipation PD
TA = 25°C 225 mW
derate 3.0 mW;oC
TC = 25°C 500 mW
derate 6.7 mW;oC
ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)
Characteristics Symbol Min Typical Max Unit
Collector-Base Cutoff Current ICBO I!lAdc

(VCB = -25 Vdc) --- 6.0 10
Emitter-Base cutoff Current lEBO !lAdc

(YEB = -20 Vdc) --- 5.0 10
Collector-Emitter Voltage BV CER Vdc

(IC = 500 I.I.Adc, RBE = 10K) 25 - -- -- -
Collector-Emitter Voltage BVCER Vdc
(IC = 50 I.I.Adc, VBE = 1.0 Vdc) 2N381 --- 50 ---
2N382, 2N383, 2N2171 --- 45 ---
DC Current Gain hFE -- -
(IC = 20 mAdc, VCE = -1.0 Vdc) 2N381 35 --- 65
2N382
2N383
60
75
-- -- -- 95
120
2N2171 110 --- 250
(IC = 100 mAdc, VCE = -1.0 Vdc) 2N381 30 -- -- -- - --

2N382 50 -- -
2N383 65 --- ---
2N2171 90 --- ---
2-27
2N381 thru 2N383, 2N2171 (continued)
Small Signal Current Gain

(IC= 10mA, veE = -5.0V, f= 1kHz) ~e -- -
2N381 35 60 85
2N382 70 90 135
2N383 90 115 155
2N2171 120 210 310
Voltage Feedback Ratio hre Xl0- 3

(Ie = 10 mA, VCE = -5 V, f = 1 kHz)
2N381 -- --
--
0.66 ---
2N382 0.69 - --
2N383 ------ 0.72 ---
2N2171 0.75 - --
Input Impedance hie ohms
(Ie = 10 mA, VCE = -5.0 V, f = 1 kHz)
2N381 -- ---- 300 - --
2N382 450 -- --
-- -- -- --
2N382 550
2N2171 850 -- -
Output Admittance h j.Lmhos
oe
(Ie = 10 mA, VCE = -5.0 V, f = 1 kHz)
2N381 -- -- -- 420 - --
2N382
2N383
2N2171 -- ----
400
380
500
------ ---
Trailsducer Gain GT dB
(Rg " 300 n , RL " 500 n ) 2N381 - -- 36 ---
(Rg = 450 n , RL = 500 n ) 2N382 -- - 38 - --
(Rg = 550 n , RL = 500 n ) 2N383 - -- 39.5 - --
(Rg = 785n , RL = 500n ) 2N2171 -- - 42.5 - --
Output Capacitance
(Ie = 1 mA, VCB = -6V)
Cob --- 20 - -- pF
Noise Figure NF dB
(Ie = 1 mA, VCE = -6V, Rg = 1 kc, f = 1 kHz)
2N381 - -- 6.0 -- -
2N382 -- - 5.5 -- --
--
2N383 -- - 5.0
2N2171 - -- 3.5 - --
Cutoff Frequency fab MHz
(IC = 1 mA, VeB = -6V)
2N381 --- 3.0 - --
2N382
2N383
------ 4.0
5.0
-- -- --
2N2171 - -- 7.5 ---
2-28
2N398 r 2N398 A(GERMANIUM)
PNP germanium transistor for high-voltage, audio-

frequency applications.
CASE 31(1)
(TO·S)
All leads isolated
MAXIMUM RATINGS
Rating Symbol 2N398A 2N398 Unit

Collector~Base Voltage 105 105 Vdc
VCS
Collector·Emitter Voltage VCEO
105 105 Vdc
Emitter-Base Voltage VEB 50 50 Vdc
DC Collector Current IC 200 100 mA
Emitter Current 100

~ 200 rnA
Junction Temperature TJ -65 to +100 -65 to +85 °c
Storage Temperature Tstg -65 to +100 -65 to +85 °c
Collector Dissipation @ 25°C PD 150 50 mW
Thermal Resistance, Junction to Ambient (lJAmax 0.5 1.2 °C/mW
ELECTRICAL CHARACTERISTICS (Tc =25°C unless otherwise noted)

Collector-Base Cutoff Current

(VCB = 105 V, IB =0)
I CBO - 12.0 50 I1A

(VCB = 2. 5V, Ia
= 0)
ICBO - 5.0 14 I1A
Emitter-Base Cutoff Current

(VEB =50 V, IC = 0)
lEBO - 3.0 50 I1A
Collector-Emitter Saturation Voltage

Uc = 5 mAdc; IB = O. 25 mAdc)
VCE (SAT) - 0.11 0.35 Vdc
Base-Emitter Saturation Voltage

Uc Ia
=5 mAdc; = O. 25 mAdc)
VBE (sAT) - 0.22 0.40 Vdc
DC Current Transfor Ratio

Uc= 5 mAdc; VCE = 0.35 Vdc)
hFE 20 65 . -
DC Collector-Emitter PunCh-Through Voltage V pT 105 160 . Vdc
(VCB necessary toobtaln VEB of -1 V max,
using instrument with Zln > 11 megohm to
measure VBE)
Small-Blgnal Short-Circuit, Forward Current

Transfer Ratio Cutoff Frequency
fOlb - 1.0 - MHz
(VCB = 6 Vdc; IE = 1 mAdc)
2-29
2N398 (continued)
POWER - TEMPERATURE DERATING CURVE DC CURRENT TRANSFER RATIO versus COLLECTOR CURRENT
Vt'F. =O.35V
200 70
ISO
60
160
~::l
150
'"'-
140
" i
0 50
~
z:
0
120
~
r'\
2N3*
~
:ri
~
40
\
~
i:i
Q
100
SO ~
....
i'"
u
30 I"r--... ......
~ ~ "'- ........
U
Q
~ 60 "" 20
~
40
...... ~39S r'\. ~
r-- r-- r-
20
i'- f'\. 10
o
t'.. r-... ~ o
o W M W U ~ ~ ro w ~ ~ o 20 40 60 SO 100 120 140 160 ISO 200
TA, AMBIENT TEMPERATURE (OC) I,., COLLECTOR CURRENT (MILLIAMPERES)
LARGE SIGNAL CURRENT GAIN (H FE ) versus TEMPERATURE OUTPUT CURRENT versus BASE·DRIVE VOLTAGE
(Normalized to 2SOC Value; VeE =O.3SV) (VCE=-IV)
200 260
ISO / 24 0 II
V 22 0
/
160
V ~ 200
1
140 = L
1/1 Ic= mA ~
:3
ISO
II
-
160
120
~ )
-- / 140
5~ /
100
~ L Ic- 50~A 120
80
./ u
100 /
- -----
D::
V § I
::j 80
60
'"
u
60 L
40
40 /
L
--
20 20
o o
V
-60 -40 -20 +20 +40 +60 +SO +100 o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 O.S
TEMPERATURE (OC) V.,,, BASE·EMITTERVOLTAGE (VOLTS)
2-30
2N404 (GERMANIUM)
2N404A
PNP GERMANIUM
SWITCHING
PNP GERMANIUM SWITCHING TRANSISTORS TRANSISTORS
.. designed for medium-speed saturated switching applications.
• Low Collector-Emitter Saturation Voltage -

VCE(sat) = 0.2 Vdc (Max) @ IC = 24 mAdc
• High Emitter-Base Breakdown Voltage-

BVEBO = 12 Vdc (Min) @ IE = 20 pAdc - 2N404
= 25 Vdc (Min) @ IE =20 pAdc - 2N404A
r;:D'35~
*MAXIMUM RATINGS
nii*
Rati"g Symbol 2N404 2N404A Unit
Collector-Emitter Voltage 24 35 Vde
Collector-Base Voltage
VCES
VCB 25 40 Vde l
Emitter-Base Voltage VEB 12 25 Vde
Collector Currant - Continuous IC 150 mAde
g:m~LO.029
Emitter Current IE 100 mAde
-II'-~
i: ~.".. ~,/
Pin 1. Emitter
Total Device Dissipation @TA ~ 25°C Po 150 mW
Darate above 250 C 2.0 mW/oC A
/\&m D•D2B
45 0 T.P.
Total Device Dissipation @TC • 25°C Po 300 mW --L
Derate above 250 C 4.0 mW/oC
Operating and Storage Junction TJ,Tstg -65 to +100 DC
Tamporatura Range
·Indlcates JEDEC Registered Data.
A1IJEDECTQ·5dimensionsandnotesapply.
CASE 31 (1)
TO-5
Collector Connected to Case
2-31
2N404, 2N404A (continued)
*ELECTRICAL CHARACTERISTICS ITA = 2SOC unless otherwise noted)
OFF CHARACTERISTICS
Collector-B_ Breakdown Voltage BVCBO Vdc
(lc = 20 "Ado, IE - 01 2N404 25 - -
2N404A 40 - -
Emittar-B_ Breakdown Voltage BVEBO Vdc
!IE - 20 "Ado, IC = 01 2N404 12 - -
2N404A 25 - -
Punch-Through VoltageOl Vpt Vdc
(VEBfI-1.O Vdcl 2N404 24 - -
2N404A 36 - -
Eminer·Basa Floating Potential VEBII Vdc
(VCB = 35 Vdc, IE = 01 2N404A - - 1.0
Collector CUtoff Current leao ,.Ade
(VCB - 12 Vde, IE = 01 _. O.B 5.0
(VCB = 12 Vdc, IE =0, TA =aOOcl - 20 90
Emittar Cutoff Current lEBO - 0.5 2.5 "Ade
(VEB = 2.5 Vdc, IC =01
ON CHARACTERISTICS
(lC = 12 mAde, VCE =0.15 Vdel 30 80 -
!lC = 24 mAdc, VCE =0.20 Vdel 24 90 -
Collector-Emitter Saturation Voltage VCE( ..tI Vde
(lC= 12 mAde, IB - 0.4 mAdel - 0.09 0.15
(lc = 24 mAde, IB ='1.0 mAde I - 0.09 0.20
Base-Emitter Voltage VSE Vde
!lC - 12 mAde, IB - 0.4 mAdel - 0.27 0.35
!lc = 24 mAde, IB = 1.0 mAdel - 0.30 0.40
SMALL-5IGNAL CHARACTERISTICS
Alpha Cutoff Frequency Ihfb 4.0 25 - MHz
!IE = 1.0 mAde, VCB = 6.0 Vdel
(Vca
(Vca
= 6.0 Vde, IE = 0, I = 1.0 MHzl
=6.0Vde, IE = 1.0mAde,l= 2.0 MHzl
2N404
2N404A
-- 8.0
8.0
20
20
I nput Impedance hie - 3.6 - kohms
(lC = 1.0 mAde, VCE = 6.0 Vde, f = 1.0 kHz!
Voltage Feedbaek Ratio hre - 8,0 - X 10-4
!lC -1.0 mAde, VCE = 6.0 Vde, I = 1.0 kHzl
Small-Signal Current Gain hie - 135 - -
!lC = 1.0 mAde, VCE - 6.0 Vde, I = 1.0 kHzl
Output Admittance hoe - 50 - "mhos
!lc = 1.0 mAde" VCE = 6.0 Vde, I = 1.0 kHzl
SWITCHING CHARACTERISTICS
Oeley Time (Figure 11 ... - 0.07 - ...,..
Rise Time (Figure 11 tr - 0.12 -
Storage Time (Figure 11 is - 0.20 -
Fall Time (Figure 11 tf - 0.10 -
~
,..
Stored aase Charge (Figure 21 Om - 300 1400 --"C
-Indicates JEOEC Registered Data.
(1)V pt Is determined by measuring the emitter-base floating potentia' VEBtl' using a voltmeter with 11 megohms minimum input
Impedance. The collector-base voltage, VeB. is increased until VEBfl'" -1.0 Vdc; this value of VeB '" (V pt + 1).
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT FIGURE 2 - STOREO BASE CHARGE TEST CIRCUIT
INPUT
vout[[l
Cl is increased until the toll time of the

output waveform is decreased to 0.2 ,...
Dab i. then calculated by lIsb = Cl Vin.
VoutUL
NOTES: 1. Input pulse supplied by generator with following c, Rise and fall time: 20 ns Max b, Input capacitenee -15 pF Ma.
characteristics: 2. Waveforms monitored on scope with following e. Ri.. time - 15 ns Ma.
a, Output impedance: 50 Ohms characteristics: 3. All rssistors ±.1.0% tolerance.
b. Repetition rate: 1.0 kHz a, Input resistance - 10 Megohms Min
2-32
2N441 (GERMANIUM)
2N442 PNP germanium power transistors for power switch-
2N443 ing and amplifier applications. Power and temperature
ratings exceed EIA registration.
CASE 5
(10-36) ~ .
MAXIMUM RATINGS

Collector-Emitter Voltage VCES 40 45 50 Vdc
Base Current - Continuous IB 4.0 Adc
Emitter Current - Continuous IE 15 Adc

(EIA Registered)
Operating Junction Te.mperature Range TJ -65 to + 100 °c
Thermal Resistance, Junction to Case 8JC 1.0 °C/W
(EIA Registered)

160
en
1=
«
~ 120
z
140
"'~ Manufactu~er
o
i= 100
~
in 80 "
- "
"
en
~---
o 60 .... ........
'"'"
a:
w
s:o 40
....
a.. E I A registered r---,.....
20
o
a..
o , ....~
o 20 40 60 80 100
TC, CASE TEMPERATURE (OC)
The maximum continuous power is related to maximum junction temper-

ature, by the thermal resistance factor_
This curve has a value of 150 Watts at case temperatures of 25° C and is
o Watts at 100°C with a linear relation between the two temperatures such that
100° ~ T C
PD allowable = 0._5
2-33

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage. BVCEO • Vde
(IC = 1.0 Adc, IB = 0) 2N441 25 - -
2N442 30 - -
2N443 45 - -
Collector-Emitter Breakdown Voltage. BVCES • Vde
(IC = 300 mAde, VBE = 0) 2N441 40 - -
--
2N442 45 -
2N443 50 -
Floating Potential VEBF Vde
(VCB = 40 Vde, IE = 0) 2N441 - - 1.0
(VCB = 50 Vde, IE = 0) 2N442 - - 1.0
(VCB = 60Vde, IE = 0) 2N443 - - 1.0
Collector Cutoff Current ICBO mAde
(VCB = 2.0 Vdc, IE = 0) - 0.1 -
(VCB = 40 Vde, IE = 0) 2N441 - 2.0 8.0
(VCB = 50 Vde, IE = 0) 2N442 - 2.0 8.0
(VCB = 60 Vde, IE = 0) 2N443 - 2.0 8.0
(VCB = 40 Vdc, IE = 0, TB = 71°C) 2N441 - - 15
(VCB = 50 Vde, IE = 0, TB = 71°C) 2N442 - - 15
(VCB = 50 Vde, IE = 0, TB = 71°C) 2N443 - - 15
Emitter Cutoff Current lEBO mAde

(V BE = 20 Vde, IC = 0) 2N441 - 1.0 8.0
(V BE = 30 Vdc, IC = 0) 2N442 - 1.0 8.0
(V BE = 40 Vde, Ie = 0) 2N443 - 1.0 8.0
ON CHARACTERISTICS
(IC = 5.0 Ade, VCE = 2. 0 Vde) 20 - 40
(Ie = 12 Ade, VCE = 2.0 Vdc) - 20 -
Collector-Emitter Saturation Voltage Vde
(IC = 12 Ade, IB = 2.0 Ade) 2N441
2N442
VCE(sat)
-
-
0.3
0.3
--
2N443 - 0.3 1.0
Base-Emitter Voltage VBE Vde
(IC = 5.0 Ade, VCE = 2.0 Vdc) 2N441 - 0.65 -
2N442
2N443
-
-
0.65
0.65
-
0.9
Common-Emitter Cutoff Frequency
(IC =5.0 Ade, VCE = 6.0 Vde)
Rise Time tr I1B
(VCE = 12 Vde, IC = 12 Ade, IB = 2.0 Ade) - 15 -
Fall Time tf I1B
(IC = 0, VBE = 6.0 Vde, RBE = 10 ohms) - 15 -
• Pulse Test: Pulse Width" 300 ,,"s, Duty Cycle" 2.0%.
2-34
TYPICAL COMMON-EMITTER CHARACTERISTICS
FIGURE 2 - OUTPUT CHARACTERISTICS FIGURE 3 - OUTPUT CHARACTERISTICS

5 15
1000 mA
2N441- _looomA
2N442
~adomA BOOmA
~ 1
,
--- -
2 0: 12 6OO'mA
~
. . - 600mj -'
~ 500 mA ,
-
500rA TJ'25'C
I-
Z
~
400mA ,
-
TJ' 25'C
.0
...... 400 mA ::!IE: 9.0
i" 300 m~
300mA a
IE:
2'J&mA
0
/ 200 mA ~
IU 6.0
V
...J
100 '1'A-:--
...J
8 V l,mA - -
-
/' 9
./jmA
1_ 3.0
.150 mA
3. 0
..- VSE = 0
'IS=~~•
VSEI. 0 -
.l
IS=~
'1'-...,
o
I
0 o 10 20 30 40 50
o 10 20 30 40
VCE. COLLECTOR VOLTAGE (VOLTSI
VCE. COLLECTOR VOLTAGE (VOLTS)
FIGURE 4 - OUTPUT CHARACTERISTICS FIGURE 5 - INPUT CHARACTERISTICS

15 0.6
,,1000 mA
2N443- I
_
Go
:;
12 .... - 600 mA
bo~A
I I
0.5
I
~
'"
-'
I
500mA
, TJ' 25'C 0:
! 0.4 I
I
~ 400mA
IU
1/ I 1
Tj- 8O'C,
.I II
1 11
::E 9.0 . / 3OOm~
I-
z
:::l IU 2!i"C,
U
200 mA ::E 0.3
IE:
~ 6.0 ..- . /
:::l
u -4O·c .......
II
IU
...J
...J
lOOmA
IU
~ 0.2
I
/ r
8 -" ../ -50mA ~ /
9
3.0
0.1
V/
'":::..-'"~ /
'VSE'· 0
IS~~,I
./
o ~
o o 0.4 0.6 0.8 1.0
o 10 20 30 40 50 60 0.2
VCE. COLLECTOR VOLTAGE (VOLTS) veE. eASE VOLTAGE (VQLTS)
FIGURE 6 - DC CURRENT GAIN FIGURE 7 - TRANSCONDUCTANCE

TRANSFER CHARACTERISTICS CHARACTERISTICS
12 12. 0
/ ./ ~
10 l/ /:V 10.0 I.
0: ..I: ~ '" 0: Tj-SQ'C-"",
VL
/.VI
:;
~ A~ r--.... .... Tj =8O'C « 25'C,
~
I- 8.0
z
IU
IE: A ~ "i'.... 2S'C IU
IE:
8.0
-4O'C "'>i ry V
IE: -4Q'C
"
IE:
:::l
u 6.0
:::l
U 6.0 / "/
IE:
1/ IE:
::u / /11
~ J IU
/ / ,/
~ 4.0 ~ 4.0
9
IJ/ 9
V / /
1/1 V /11' V
2.
0,1. 2. 0
_,V L V
V
,
0 0
o 0.15 0.3 0.45 0.6 0.75 o 0.2 0.4 0.6 0.8 1.0
Ie. 8ASE CURRENT (AMP) veE. BASE VOLTAGE (VOLTS)
2-35
2N456A (GERMANIUM)
2N457A
2N458A
7 AMPERE
PNP GERMANIUM POWER TRANSISTORS POWER TRANSISTORS
PNP GERMANIUM
. designed for general-purpose power amplifier and switching 40-60-80 VOLTS

applications. 85 WATTS
• High DC Current Gain -

hFE = 30-90@ IC = 5.0 Adc
VCE(sat) = 0.5 Vdc (Max) @ IC = 5.0 Adc
"MAXIMUM RATINGS
Rating Symbol 2N456A 2N457A 2N458A Unit
Collector-Emitter Voltage VeEO 20 30 40 Volts
Collector Current
Base Current
Ves
VES
Ie
IS
-- 40
--.,...-
60
20
7.0
3.0
---
80 Volts
Volts
Adc
Adc
Total Device Dissipation@Tc = 25°C
Derate above 25°C
Temperature Range
PD
TJ,T stg
- 85
1.0
_ _6 5 t o + l l 0 _
- Watts
w/oe
°e
*Indicates JEDEC Registered Data.
FIGURE 1 - POWER-TEMPERATURE DERATING eURVE

@ TA @ TC
5.0
I~~
z
0
~ 4.0
'; I ::
v.i(i) 3.0
5S
"'s:
2.6
2.0
~-
1.0
~
0 25 50 75 100 110 125
T, TEMPERATURE (OCI
CASE 11
TO·3
COLLECTOR CONNECTEO TO CASE
2-36
2N456A, 2N457A, 2N458A (continued)
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted 1

OFF CHARACTERISTICS
Collector~Emitter Breakdown Voltage BVCEO Vde
(lC = 200 mAde, IB = 01 2N456A 20 -
2N457A 30 -
2N458A 40 -
Collector-Base Cutoff Current ICBO mAde
(VCB= 20 Vde, IE = 01 2N456A - 0.5
(VCB = 30 Vde, IE = 01 2N457A - 0.5
(VCB = 40 Vde, IE = 0) 2N458A - 0.5
(VCB = 40 Vde, IE = 01 2N456A - 2.0
(VCB = 60 Vde, IE = 0) 2N457A - 2.0
(VCB = 80 Vde, IE = 01 2N458A - 2.0
(VCB = 40 Vde, IE = 0, TC = +71 o CI 2N456A - 10
(VCB = 60 Vde,IE = 0, TC = +71 o CI 2N457A - 10
(VCB = 80 Vde, IE = 0, TC = +71 o CI 2N458A 10
Emitter-Base Cutoff Current lEBO 2.0 mAde
(VEB = 20Vde, IC = 01
ON CHARACTERISTICS
(lC = 1.0 Ade, VCE = 1.5 Vdel 40 -
(IC = 3.0 Ade, VCE = 1.5 Vdel 35 -
(lC = 5.0 Ade, VCE = 1.5 Vdel 30 90
(lc = 7.0 Ade, VCE = 1.5 Vdel 22 --
Collector-Emitter Saturation Voltage VCE(satl - 0.5 Vde
(lC = 5.0 Ade, IB = 500 mAdel
Base-Emitter Voltage VBE - 1.5 Vde
(lC = 5.0 Ade, VCE = 1.5 Vdel
Current-Gain-Bandwidth Product IT 200 - kHz
(lC = 1.0 Ade, VCE = 2.0 Vdel
I nput Impedance hie - 28 Ohms
(lC = 5,0 Ade, VCE = 1.5 Vdel
2N459I A(GERMANIUM)
2-37
2N460, 2N461 (GERMANIUM)
PNP germanium transistor for general purpose

in dustrial applications.
CASE 31(1)
(TO-5)
MAXIMUM RATINGS

Collector-Base Voltage V CB 45 Volts
Collector-Emitter Voltage (R BE = 1 K) VCER 35 Volts
Emitter-Base Voltage V EB 10 Volts
at 25° C Case Temperature 500 mW
Derate above 25° C 6.7 mW/oC
at 25° C Ambient Temperature 225 mW
Junction Temperature Range TJ -65 to +100 °c
ELECTRICAL CHARACTERISTICS (Te = 250 e unless otherwise noted)

Collector-Base Cutoff Current I CBO /JAdc
(V CB = 45 Vdc) --- --- 15
Emitter-Base Cutoff Current /lAdc

~BO
(V EB = -10 Vdc) --- --- 10
Collector-Emitter Voltage BV CER Vdc
(IC = 1 mAdc, RBE = 1 K) 35 --- ---
Small-Signal Current Gain hfb ---
(V CB = -6 Vdc, IE = 1 mAde, f = 1 kHz) 2N460 0.94 0.96 0.972
2N461 0.955 0.968 0.988
2N460 hfe 17 36 ---
(V CB = -6 Vdc, IE = 1 mAdc, f = 1 kHz) 2N461 31 --- 200
Reverse Voltage Ratio h rb X1O-4
(V CB = -6 Vdc, IE = 1 mAdc, f = 1 kHz) 2N460 --- 2.0 15
2N461 --- 3.0 15
Input Resistance h ib Ohms
(V CB - -6 Vdc, IE = 1 mAdc, f = 1 kHz) 2N460 25 30 40
2N461 25 --- 40
Output Admittance hob pmho
(V CB = -6 Vdc, IE = 1 mAdc, f = 1 kHz) 2N460 --- 0.8 1.5
2N461 --- 0.5 1.5
Frequency Cutoff MHz
fab
(V CE = -5 Vdc, IE = 1 mAdc) 2N460 --- 1.2 ---
2N461 --- 4'.0 ---
(V CB = -10 Vdc, IE = 1 mAde, f = 1 MHz) --- 20 ---
Noise Figure NF dB
(VCE = -4.5 Vdc, IE =0.5 mAdc, R = 1 K, f = 1 kHz)2N460 --- 5.0 ---
g 2N461 --- 4.0 ---
2-38
PNP germanium transistor for general purpose appli-

cations in the audio-frequency range.
CASE 31(1) "
(TO-5)
All I&ads isolat&d \\
MAXIMUM RATINGS
Rating Symbol 21464 2N4&5 2N466 2N4&7 Unit
Collector-Base Voltage VCB 45 45 35 35 Volts
Collector-Emitter Voltage VCER 40 30 20 15 Volts
DC Collector Current IC mA
500
Max. Junction & Storage Temperature TJ and °c

T stg
100
Collector Dissipation,.Ambient PD mW
200
Derate above 25°C 2.67 mW/oC
Thermal Resistance, Junction to Ambient &JA 0.375 °C/mW

Collector-Emitter Breakdown Voltage BV CER Vdc
(lc = 0.6 mAde, R BE= 10 K ohms) 2N464 40 - -
2N465 30 - -
2N466 20 - -
2N467 15 - -
Collector- Base Cutoff Current ICBO p.Adc
(V CB = 20 Vdc) - 6.0 15
Small Signal Current Gain Cutoff Frequency f~ MHz

(V CB = 6 Vdc, IE = 1 mAdc) 2N464 - 0.7 -
2N465 - 0.8 -
2N466 - 1.0 -
2N467 - 1.2 -
Small Signal Current Gain hfe -
(V CE = 6 Vdc, IE = 1. 0 mAdc, f = 1 kHz) 2N464 14 26 -
2N465 27 45 -
2N466 56 90 -
2N467 112 180 -
2-39
Characteristic SyII..1 Mill TJP Max Ulit
Small Signal Input Impedance hie Ohms

(V CE = 6 Vde, IE = 1. 0 mAde, f = 1 kHz) 2N464
2N465
-
-
900
1400
-
-
2N466
2N467
-
-
3000
5500
--
Small Signal Power Gain Ge dB
(V CE = 6 Vde, IE = 1.0 mAde, f = 1 kHz, matched) 2N464 - 40 -
2N465
2N466
-
-
42
44
--
2N467 - 45 -
Noise Figure NF dB
(V CE = 2.5 Vde, IE = 0.5 mAde, f = 1 kHz, Rs = 10 Kohms, - - 22
df=1Hz
POWER·TEMPERATURE DERATING CURVE SMALL SIGNAL CURRENT GAIN versus TEMPERATURE

200 , 800
180 600
160
\ 400
S 140
~
r\ <.>
°
II>
~
::; N
200
..... I\.
:i 120
\ ........
!c
::> V
I /
z 100 ~
... ioo
0
S \ 0 80
a..
;.;;
80
r\ ...
~
z 60
-'
'".....2i 60 ...'"
<.>
-""
< r'\
a.. 40
....... .....
e 40
\ 20
20
o '\ o
o 10 20 30 40 50 60 10 80 90 100 -60 -40 -20 o 20 40 60 80
AMBIENT TEMPERATURE °C JUNCTION TEMPERATURE °C
Input Current versus Emitter·Drive Voltage Small Signal Current Gain versus Collector Current
(common emitter 1 ....)
2.0
1.8
I III I 200
III rl V
1.6
1.4
2N464 IV ) a
c. 160 "\ Vea = 1 VOLT
2N465
1-1 III I z
~
1\.2N467
~
1.2
1/ r/ V ~
z
.... 12Q "- ~
1.0
I VI
j '"'"::><.>
.8
.6
/ VJ fjC:::
) VI r--
2N466
2N461
.....
...z:;.;;<
.....
.....
80
I--- ,,2N466
1"- ~
"",,2N465
" -'" I"""-- t--
--
.4
~v
i 40 10-
--.....
.2
V I-- r 2j464
.... ~ ~V
o o
o .05 .10 .15 .20 .25 .30 .35 .40 .45 o 10 20 30 40 50 60 10 80 90 100
BASE TO EMITTER VOLTAGE (V..l VOllS COLLECTOR CURRENT (lcl MILLIAMPERES
2-40
499 Germanium PNP high frequency transistors designed
2N for driver applications, small-signal amplification, wide
(2N499JANAVAILABLE) band video amplifiers, and VHF/UHF oscillators.
2N499A
(2N499A JANAVAILABLE)
2N502
CASE 149 2N499. 2N499A
2N502A <TO-l) 2N499JAN. 2N499A JAN
(2NS02AJANAVAILABLE)
2N502B
(2NS02BJAN AVAILABLE)
2N1742
CASE 31 2N502.A.B.
(TO-S) 2N~2A.B. JAN
2N1742
MAXIMUM RATINGS
2N499
2N499 JAN 2N502A,B
Rating Symbol 2N499A 2N502 2N502A.JAN 2N1742 Unit
2N499AJAN 2NS02B JAN
Emitter-Base Voltage VEB 0.5 0 .. 5 0.5 0.5 Vdc
Collector Current IC 50 50 50 50 mAdc

Total Device Dissipation PD 60 60 75 60 mW
Operating Junction TJ 100 100 100 125 °c

Temperature Range
2-41
2N499, A/2N499JAN, A/2N502, A, B/2N502JAN, A, B/2N1742 (continued)
ELECTRICAL CHARACTERISTICS (TA =25"C unless otherwise noted)

OFF CHARACTERISTICS
Collector Cutoff Current ICBO ,.Ade
(VCB = 10 Vde, ~ = 0) 2N502.A, B - 5.0
2N502A, BJAN - 4.0
2N1742 - 10
(VCB = 15 Vdc, ~ = 0) 2N499,A, 2N499,A JAN - 10
Current-Gain-Bandwidth Product fT MHz
(lC = 2.0 mAde, VCE = 10 Vde, f = 20 MHz) 2N499, A, 2N499, A JAN 120 -
(IC = 2.0 mAde, VCE = 10 Vde, f = 100 MHz) JAN2N502A, B 150 600

(VCB = 10 Vdc, ~ = 0, f = 4.0 MHz) 2N499,A, 2N499,AJAN - 2.5
2N502 - 2.0
2N502A, B - 1.6
2N502A, BJAN - 1.6
Smail-Signal Current Gain hfe
20 80
-
(IC = 1.0 mAde, VCE = 9.0 Vde, f = 1.0 kHz) 2N499, A, 2N499, A JAN
(IC = 2.0 mAde, VCE = 10 Vde, f = 1. 0 kHz) 2N502 9.0 -
2N502A
2N502B
15
20
-
80
2N502A JAN 15 200
2N502B JAN 25 80
Collector-Base Time Constant r b 'c e ps
(~ = 2.0 mAde, VCB = 10 Vde, f = 46 MHz) 2N499,AJAN 5.0 50
2N499
2N499A
-
5.0
250
250
2N502 -
5.0
120
2N502A. B 50
'2N502A, B.JAN 5.0 25
Noise Figure NF dB
(V CB = 10 Vde, IE = 2.0 mAde, f = 200 MHz) 2N502A, .2N502A JAN - 7.0
2N502B, .2N502B JAN - 7.0
(V CC = 12 Vde, IE = 2. 5 mAde, f = 200 MHz) 2N1742 - 5.5
FUNCTIONAL TESTS
Power Gain PG dB
(VCB = 10 Vde, IE = 2.0 mAde, f = 100 MHz) 2N499, A, 2N499 , A JAN 7.5 -
(VCB = 10 Vde, IE = 2.0 mAde, f = 200 MHz) 2N502 8.0 -
2N502A 10 -
2N502B
2N502A, B JAN
10
10
-
20
(V CB = 12 Vde, ~ = 2. 5 mAde, f = 200 MHz) 2N1742 14 19
2N508 (GERMANIUM)
FOR SPECIFICATIONS, SEE 2N322 DATA.
2-42
2N508A (GERMANIUM)
PNP Germanium Milliwatt transistor designed for low

noise audio and switching applications .
• Small-Signal Current Gain -
hfe = 180 (Max) @IE = 1.0 mAdc
• Low Noise Figure Applications -
CASE 31 (1) NF = 5.0 dB (Max) @ IC = 1.0 mAdc
(TO-5)
MAXIMUM RATINGS

*Collector-Emitter Voltage VCER 25 Vdc
(RBE = 10 kohms)
*Collector-Emitter Voltage V CES 30 Vdc
*Collector-Base Voltage VCB 30 Vdc
*Emitter-Base Voltage VEB 10 Vdc
*Collector Current IC 200 mAdc
*Total Device Dissipation @T A = 25° C PD 200 mW

Operating and Storage Junction T J' Tstg -65 to +100 °c
Temperature Range
*Indicates JEDEC Registered Data
2-43
2N508A (continued)

OFF CHARACTERISTICS
'Collector-Emitter Breakdown Voltage BV CER Vdc
(IC = 600 /lAdc, RBE = 10 k ohms) 25 -
'Collector Cutoff Current I CBO /lAdc
(V CB = 25 Vdc, IE = 0) - 7.0
'Emitter Cutoff Current /lAdc

lEBO
(V BE = 10 Vdc, IC = 0) - 7.0
ON CHARACTERISTICS
'DC Current Gain hFE -
(IC = 20 mAdc, VCE = 1. 0 Vdc) 100 200
'Base-Emitter Voltage VBE Vdc

(IC = 20 mAdc, VCE = 1. 0 Vdc) 0.18 0.32
SMAll-SIGNAL CHARACTERISTICS
'Cutoff Frequency tab MHz
(IE = 1. 0 mAdc, VCB = 5.0 Vdc, f = 1. 0 kHz) 2.5 -
'Output Capacitance Cob pF
(V CB = 5.0 Vdc, IE = 1. 0 mAdc, f = 1. 0 MHz) - 35
'Input Impedance hib Ohms

(IE = 1. 0 mAdc, VCB = 5.0 Vdc, f = 1. 0 kHz) 26 31
'Voltage Feedback Ratio hrb

(IE = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz) 1.0 17 x 10- 4
'Small-Signal Current Gain hfe -

(IE = 1. 0 mAdc, VCB = 5.0 Vdc, f = 1. 0 kHz) 75 180
'Output Admittance /lmhos

hOb
(IE = 1. 0 mAdc, VCB = 5.0 Vdc, f = 1. 0 kHz) 0.1 0.9
Noise Figure NF dB
(IC = 1. 0 mAdc, V CB = 5.0 Vdc, RS = 500 ohms, - 5.0
f=1.0kHz, Ilf = 1. 0 Hz)
'Iodicates JEDEC Registered Data.
2-44
2NS24 thru 2NS27 (GERMANIUM)
PNP germanium transistor for switching and ampli-

fier applications in the audio-frequency range. Avail-
able for military and high-reliability industrial purposes.
CASE 31(1}
(TO-S)
MAXIMUM RATINGS

Storage and Operating Temperature T stg ' TJ -65 to +100 °c
Collector Dissipation PD 225 mW

fa) 25°C Ambient
Thermal Resistance ()JA 0.333 °C/mW

Junction to Ambient
Thermal Resistance ()JC O. 15 °C/mW

(infinite heat sink)
2-45
2N524 THRU 2N527 (continued)
ELECTRICAL CHARACTERISTICS ITA = 250 C unless otherwise specified)

Collector Cutoff Current ICBO - 10 #Adc
(VCB =30 Vdc, ~ =0)
(VEB =15 Vdc, IC =0)
lEBO - 10 #Adc
Collector-Emitter Breakdown Voltage BV CER 30 - Vdc

(IC =0.6 mAdc, RaE =10K)
Collector-Emitter Reach Through
(Punch-Thru) Voltage
VRT 30 - Vdc
(VEB = 1 Vdc, VTVM Z 2.1 Megohm)
Static Forward-Current Transfer Ratio hFE

(VCE =1 Vdc, IC = 20 mAdc) 2N524 25 42 -
2N525 34 65 -
2N526 53 90 -
2N527 72 121 -
Small-Signal Short-Circuit Forward fab
Current Transfer Ratio Frequency Cutoff
(VCB =5 Vdc, ~ = 1 mAdc) 2N524 0.8 5.0 MHz
2N525 1.0 5.5
2N526 1.3 6.5
2N527 1.5 7.0
Output Capacitance Cob
(VCB =5 Vdc, IE =1 mAdc, f =1 MHz) 5.0 40 pF
Small-Signal Open Circuit Output Admittance hob

(V CB =5 Vdc, IE =1 mAdc, f = 1 kHz) 2N524 0.10 1.3 #mho
2N525 0.10 1.2
2N526 0.10 1.0
2N527 0.10 0.9
Small-Signal Open Circuit Reverse Transfer h rb
Voltage Ratio
(VCB =5 Vdc, ~ = 1 mAdc, f = 1 kHz) 2N524 1.0 10 X10- 4
2N525 1.0 11
2N526 1.0 12
2N527 1.0 14
Small-Slgnal Short Circuit Input Impedance h ib
(VCB =5 Vdc, ~ = 1 mAdc, f = 1 kHz) 2N524 26 36 ohms
2N525 26 35
2N526 26 33
2N527 26 31
Collector-Emitter Saturation Voltage VCE (sat)
Us = 2 mAdc, Ie" 20 mAdc) 2N524
Us = 1.33 mAdc,IC " 20 mAde) 2N525 - 130 mVdc
Us = 1. 0 mAdc, Ie • 20 mAde) 2N526 - 130
<Is = 0.67 mAde, Ie • 20 mAde) 2N527 - 130
- 130

(VCE" 1 Vdc, IC =20 mAdc) 2N524 220 320 mVdc
2N525 200 300
2N526 190 280
2N527 180 260
2-46

Noise Figure
'YCB =5 Vdc; 'E
=1 mAde,
NF - 15 dB
f =1 kHz,BW = 1 Hz
Small-Signal Short-Circuit h fe
Forward-Current Transfer Ratio
'YCE =5 Vdc, IE = 1 mAde, f = 1 kHz) 2N524
2N525
18
30
41
64
-
2N526 44 88
2N527 60 120
POWER·TEMPERATURE OERATING CURVE COLLECTOR CUTOFF CURRENT versus TEMPERATURE

250 1000
- 225
~ ......... ..I I
...f
; 200 100 I--YCB = -lOY
f:::;
'" = ............
e~
150 ~ 10
, V
~ ~ 100 "-.. § 1.0 ./
.............
8~ so :I
~~
Q 0 .............. Q
5
'" 0.1 ./ "'.25°C
o 25 50 75 100 0.01 /'

T., AMBIENT TEMPERATURE (OC) J V
The maximum continuous power is related to maximum junction teme
perature by the thermal tesistance factor.
0.001
0.0001
,. ..".
This curve has a value of 225mW at case temperatures of lS·C and is

o mW at 100·C with a linear relation between the two temperatures such that: -~ -40 -20 0 +20 +40 +60 +80 +100
looo_T"
allowable PD:::;: ---o.m- TEMPERATURE (OC)
- "FE VARIATION WITH TIME I CBO VARIATION WITH TIME
Et~~
'"~
;
0
II ===+=+==+=1
I'" I I I
1000
TIME (HOURS)
l==::::+:=:+:::+A
2000 1000
TIME (HOURS)
2000
COMMON EMITTER INPUT VOLTAGE versus COLLECTOR CURRENT D-C BASE CURRENT GAl Nversus COWClOR CURRENT
0.7 ...--r--r---,..---.,.-...,....--,....--r--r"'--r----. 140
5!
I
Yc.=-l Y
.!
i 120 r-- T. = 25°C
'"
Ii;\!
-- -~
100
...... /'
z 80
II!
'"
::0
U ~
;' I'--- 2N526(A)
g /' 2N525(A)-
8 40
::: /2N524(A)-
,: j /'
0.1 1--+-+---11---+--+---1--+--+--+---1 20
o O~-2~0--~~~~6~0--8~0--~10~0~12~0~1~~~I~~~-18~0~2~00 o
o ~ ~ ~ 80 ~ rn ~ ~ ~ ~
I., COLLECTOR CURRENT (MILLIAMPERES) Ie, COLLECTOR CURRENT (MILLIAMPERES)
2-47
·2N554 (GERMANIUM)
2N555 For Specifications, See 2N178 Data.
JAN 2N559-1 (GERMANIUM)

JAN 2N559-2
JAN 2N559-3*
PNP germanium mesa transistors designed for mil-

itary and industrial high-reliability, high-speed switch-
ing applications.
CASE 22
(TO-18)
Collector connected to case
MAXIMUM RATINGS

Base Current IB 50 mAdc
Emitter Current IE 50 mAdc
Total Device Dissipation @ T A = 25°C Po 150 mW

Total Device Dissipation @ T C = 25°C Po 300 mW

• Level 3 reliability data shown for information only. Qualification tests will be initiated upon established
customer requirements.
2-48
JAN 2N559.1, .2, -3 (Continued)
RELIABILITY RATINGSt
Est. Max
QUALITY LEVELS (LTPD) RELIABILITY LEVELS Failure
Maximum failure rate (x) during first Rate in
1000 hours with 90% confidence. Conserva-
Relia- tively
Operation Life Storage Life Designed
bility
Level PD = 150 mW Equipment
Indi- Group A Group B IE=50 mA TA = 100°C TA=150°C %/1000
cafor Subgroups Subgroups TA = 25°C Hrs
Major Minor Major Minor Major Minor Major Minor Major Minor
Defect Defect Defect Defect Defect Defect Defect Defect Defect Defect
(1) 3.0 5.0 10 20 10 20 10 20 20 - 0.1
(2) 1.5 3.0 5.0 15 5.0 15 1.5 3.0 7.0 20 0.01
(3)* 1.0 2.0 3.0 7.0 2.0 5.0 0.2 0.5 1.0 3.0 0.001
t This table relates the statistical sampling requirements in the specification to the reliability levels for the
transistor.
* Level 3 reliability data shown for information only. Qualification tests will be initiated upon established
customer requirements.
TABL.E I - GROUP A INSPECTION
LTPD for Limit
MIL·STD·7S0 Respective Reliability Lev.1
Examination or Test Symbol Unit
Method Total CD Maior Requirement Lim~ Defetl (Iassilitation
(1) (2) (3) (1) (2) (3) Min Max Minor Major
SUIGIOUP 1
V18ual and Mechanical Examination 2071 10 7
• 7 5 3 - - - - - -
SUBGROUP 2 5 3 2 3 1.5 1.0
Emitter-Base Cutoff Current 3061 lEBO p.Ade

(VEB' ·1 Vdc) Condition D - 5.0 >5 to 10 >10
Collector-Base Cutoff Current 3036 p.Adc

(Ves = -5 Vdc) Condition D
'cBO
- 3.0 >3 to 5 >5
Emitter-Base Breakdown Voltage 3026 BVEBO Vdc

(IE = -200 IJ.Adc) Condition D 6.0 - 3.5to<5 <3.5
Collector-Emitter Breakdown Voltage 3011 Vdc

('c • -100 I<Ade) Condition C
BVCES
15 - 12 to <15 <12
SUBGROUP :I 5 3 2 3 I.' 1.0
Collector-Emitter Saturation Voltage 3071 VCE(sat) Vde

(Ie = ·50 mAdc. 's • -1.5 mAde) - 1.0 >1.0 to 1.2 >1.2
(lc Of ·10 mAde, IB '" ·0.4 mAde) - 0.3 >0.3 to 0.35 >0.35
Base·Emttter Saturation Voltage 3066 VBE(sat) Vdc

(lC" ~10 mAde, IS ;r: ·0.4 mAde) Condition A 0.32 0.44 0.30 to <0.32 <0.30
and and
0.44 to 0.50 > 0.50
DC Current Gain
(IC = -10 mAde, VCE '" ·0.5 Vde)
3076 hFE
25 150 20 to<25 <20
-
.nd and
>150 to 200 >200
SUBGROUP 4 5 3 2 3 1.5 1.0
Rise Time 3251 tr os

~:f~ :0~~55 ;::~,V:~~faoO ~b~:.de,
Condition A - 95 >95 to 115 >115
CCE'" 150 pF I CCB 2 :g.5 pF)
.
III
Sto.rage Time 3251 os

-
~:;s. ~.2:·~~~: lc5 : ;:0~!)
Condition A 95 >95 to 115 >115
Fall Time
(Vee.' -3.5 Vdc. II . -I mAde,
3251
Condition A
.. - 100 > 100 to 120 >120
n.
~JB- =o;!ort-:~) C = 300 ohms,

-0
NOTES:
<D Total is defined as the sum of the major and minor defectives.
2-49
JAN 2N559·1, ·2,·3 (Continued)
TABLE II - GROUP B INSPECTION
LTPD for Limit

Mll-STD-7S0 Re","clive Reliabilitv level
Examination or Test Melhod Symbol Unit
Tolal 9 Maor Requirement Limit Defect Classification
(1) (2) (3) (1) (2) (3) Min Max Minor Major
SUBGROUP I
Physical Dimensions 2066 20 15
SUBGROUP 2 3 1.5 1
Moisture Resistance 1021

(No Initial conditioning; one c/cle;
only steps 1 to 6)
End.Point Tests:
Emitter-Base Cutoff Current 3061 lEBO /lAde
(VEB" -1 Vdc) Condition D 10 >10 to 20 >20

(VeE'" -5 Vdc)
3036
Condition D
leBO
... > 5 to 10 >10
/lAde
DC Current Gain 3076 hFE

(Ie"' -10 mAde, VeE" -0.5 Vdc) 20 200 15 to <20 <IS
and and
>200 to 250 >250
SUBGROUP 3 20 15 7 10
Tension 2036
Condition A
Solderability 2026
Temperature Cycling 1051

(5 cycles) +5 Condition B
T(high) '" 100 -0 °c 2N559 (1)
T(high) 0: 150 ~5 0c
2N559 (2),
2N559 (3)
Thermal Shock (Glass Strain) 1056
Condition A
Moisture Resistance 1021
End-Point Tests: Same as Subgroup 2
SUBGROUP 4 20 15 7 10
Shock 2016
(Non-operating; 5 blows: 1500 Gin
Orientations Xl' Y I • Y2' and Zl
(total = 20 blows)
Constant Acceleration 2006
(20.000 G, Orientations Xl' YI' Y2 ,
and Zl)
Vibration Fatigue 2046
(No bias applied)
Vibration, Variable Frequency 2056
(1 cycle each in Orientations Xl. YI.
and Zl)
SUBGROUP 5 20 15 7 10
Terminal Strength - Lead Fatigue ® 2036

Condition E
SUBGROUP 6 '0 - - 10 - -
High-Temperature LiCe (Non-operating) 1031
(Tstg = 100:~ 0c 2N559 (t.)ONLY
SUBGROUP 7 - 20 3 - 7
High- Temperature Life (Non-operating) 1031
(Tstg .. l50:~ oc) ~~~~: ~~~.

SUBGROUP. 20 15 5 10
Steady-State Operation Ure 1026

(IE '" 50 :~ mAdc. Pn '" l50_+1~ mW,
TA '" 25 ~ 3°C)
NOTES: CD Total 18 defmed as the sum of the major and mmor defectives.
® Rejects from prior electrical-test samples from the same lot may be used {or this test.
2-50
JAN 2N559.1, .2,·3 (Continued)
TABLE III - GROUP C INSPECTION·

LTPD for limit
MIL·STD-7S0 Respective Reliabilily Level
Examination or Test Method Symbol Uni!
Total 0- Maior Requiremenl limil Defict Classificalion
(1) (2) (3) (I) (2) (3) Min Max Minor Major
SUIGROUP 1 10 7 5 5 3 2
output Capacitance 3236 Cob pF

(Vee = -5 Vdc, IE = 0, f '" 100 kHz) - 6.0 >6 to 10 >10
Current-Gain ..... Bandwidth Product 3261 IT MH.

(IE = 10 mAde, Vc == _1 Vde, 300 1000 250 to <300 <250
f'" 100 MHz) and
>1000
Delay Plus RiSe Time 3251 td + tr ns
~~~S :(!!::~cR~~E&~)o~::~~ Vdc,

Condition A - 50 >50 to 75 >75
eee '" 2:6.5 pF, CBE '" 2 ! 0.5 pF

SUBGROUP 2 10 7 $ 5 3 2
Collector-Emitter Cuto(( Current 3041 ICES J.lAdc

(VeE = 5Vdc,TA =+550C) Condition C - 40 >40 to 50 >50
DC Current Gain
(Ie = -10 mAde, VCE = -0.5 Vdc,
3076 hFE
10 - 8 to<10 <, -
TA = _55°C)
SUBGROUP 3 20 15 7 10 5 3
Salt Atmosphere (Corrosion)

End-Point Testa:
1041 - - - - - -
Same as Group B. Subgroup 2
SUBGROUP 4 - 20 10 0 5
High-Temperature Life (Non~operating) 1031 - - - - - -

(T stg '" 100:~ °C)
End~Point Tests:
Emitter-Base Breakdown Voltage 3026 BV EBO Vdc

(IE'" -300,!.lAdc) Condition D 5.0 - 3.5 to <5 <3,5
Collector-Emitter Breakdown Voltage

(Ie' -100.uAdC)
3011
Condition C
BVCES
12 - 8 to<12 <, Vdc
Collector-Emitter Saturation Voltage 3071 VCE{sat) Vdc

(IC· -10 mAdc, IB "" -D,S mAdc) - 0.3 >0.3 to 0,6 >0,6
Base-Emitter Saturation Voltage 3066 VBE(sat) 0,31 0.47 0.25 to <0.31 <0.25 Vdc
{IC '" -10 mAde, ~ '" -0.4 mAde} Condition A and and
>0.47 to 0,55 >0.55
Delay Time 3251 td ns

i:~c= =_O~:55 ~~~.Vl~~off~o; ~h~:~C'
Condition A
CeE '" 150 pF', GCE .. 2 :g.5 pF, 10 < 10 and >45
3'
CBE =: 2 !O,5 pF) >35to45
Rise Time 3251 tr ns
i~~s :0~:55 :1~~,V:~(~(q;, ~h;;~C'

Condition A 15 105 <15 and >125
>105 to 125
CCE '" 150 pF, CCB '" 2 :g.5 pF)
Storage Time 3251 t, ns
~;i~ ~,;:'~!:~:!lg: -;;0 ~!~)
Condition A 15 105 <15 and > 125
>105 to 125
• Group C is to be performed on the first lot and every 6 mOl\ths thereafter,

NOTE: CD
Total is defined as the sum o( the major and minor defectives.
2N618 (GERMANIUM)
2-51
2N650A, 2N650 (GERMANIUM)
2N651 A, 2N651
2N652A, 2N652
GERMANIUM PNP MILLIWATT TRANSISTORS

AUDIO TRANSISTORS
GERMANIUM PNP
· .. designed primarily for low·power audio amplifier and medium·
speed switching applications. 45 VOLTS
200 MILLIWATTS
• Stabilization Bake at 1000C for 120 Hours for
Greater Gain Stability
• Low Collector· Emitter Saturation Voltage -
0.2 Vdc Typ @ IC ~ 200 mA
'MAXIMUM RATINGS
Rating Svmbol Value Unit
Coliector·Emitter Voltage (RBE = 10 k ohms) VCER 30 Vdc
CollectorwBase Voltage Vce 46 Vdc
Emitter-Base Voltage VEe 30 Vdc
Collector Current - Continuous (1) IC 500 mAde
Total Device Dissipation @I TA <: 25°C Po 200 mW

Oefi~te above 2SoC 2.67 mW/DC
Operating and StorageJunction Temperature Range TJ, T stg -65 to +100 °c
Maximum lead temperature is 250°C for 3.0 seconds,
~:l;iDlA~
1/16" ±. 1/32" from case.
(1) Limited bV power dissipation.
~DlA 0.240
~.~~=tI
'THERMAL CHARACTERISTICS
Characteristic Svmbol Max Unit
Thermal Resistance, Junction to Case 6JC 0.250 DC/mW
Thermal Resistance. Junction to Ambient 8JA 0.375 DC/mW 0.019
1.5
Hi~
*Indicates JEOEC Registered Data.
FIGURE 1 - POWER·TEMPERATURE DERATING

220
200 r--..... ......., "-
10
..s
180
160
.......... ""
~ 1411
>=
;1; 120
ili 100
"'" ........
"
'\. 'JC = 0.25DC/mW
."-
"\..
C
~
80
'JA = 0.375 DC/mW"'-
"- Pin 1. Emitter
~
"""
Z.8s.
60 .......... 3.Collector
~ 40 ........ ~
20
o
20 30 40 50 60
TA,AMB1ENTTEMPERATURE (DC)
70 80 90
'"100
CASE 31 (1)
TO-5
(All leads isolated from Case)
2-52
2N650A,2N650/2N651 A,2N651 /2N652A,2N652 (continued)
*ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I Characteristic I Symbol Min Max Unit
OFF CHARACTERISTICS
Floating Potential (11 VEBF - 1.0 Vde
(VCB = 45 Vde, IE = 0, voltmeter input resistance ~ 10 megohms)
Collector Cutoff Current ICER - 600 /lAde
(VCE = 30 Vde, RBE = 10 k ohms)
Collector Cutoff Current ICBO /.tAde
(VCB = 30 Vde, IE = 0) - 10
(VCB = 45 Vde, IE = O) - 50
(VCB = 10 Vde, IE = 0, TA = +71 o C) - 100
Emitter Cutoff Current lEBO - 10 /lAde
(VEB = 30 Vde, IC = O)
ON CHARACTERISTICS
(lC = 10 mAde, VCE = 1.0 Vde) 2N650 30 -
2N650A 33 -
2N651, A 45 -
2N652, A 80 -
Collector-Emitter Saturation Voltage VCE(sat} Vde
(I C = 50 mAde, I B = 2.5 mAde) 2N650,A - 0.250
(lC = 50 mAde, IB = 1.67 mAde) 2N651 , A - 0.250
(I C = 50 mAde, I B = 1.25 mAde) 2N652,A - 0.250
(lC = 100 mAde, IB = 5.0 mAde) 2N650,A - 0.500
(lC = 100 mAde, IB = 3.33 mAde) 2N651, A - 0.500
(lC = 100 mAde, IB = 2.5 mAde) 2N652,A - 0.500
(IC = 10 mAde, VCE = 1.0 Vde) 2N650,A - 0.270
2N651 , A - 0.260
2N652, A - 0.250
Common-Base Cutoff Frequency f ab MHz
(IE = 1.0 mAde, VCB = 6.0 Vde) 2N650,A 0.75 -
2N651 , A 1.0 -
2N652, A 1.25 -
putput Capacitance (1.) Cob -
25 pF
(VCB = 6.0 Vde, IE = 0, f = 1.0 MHz)
Input Impedance hib 27 37 Ohms
(IE = 1.0 mAde, VCB = 6.0 Vde, f = 1.0 kHz)
Small-Signal Current Gain hfe -
(IE = 1.0 mAde, VCE = 6.0 Vde, f = 1.0 kHz) 2N650, A 30 70
2N651, A 50 120
2N652, A 100 225
Output Admittance (1) hob 0.15 1.0 IJmhos
(IE = 1.0 mAde, VCB = 6.0 Vde, f = 1.0 kHz)
Noise Figure NF - 15 dB
(IE = 0.5 mAde, VCE = 4.5 Vde, RS = 1.0 k ohms,
f = 1.0 kHz, C. f = 1.0 Hz)
(1) Applies only to 2N650A, 2N651A, and 2N652A Devices
* Indicates JEDEC Registered Data.
FIGURE 2 - DC CURRENT GAIN FIGURE 3 - "ON" VOLTAGES

2.0 1.4
~:::;
II 1.2 f- TJ: 25'C
~J: 25'~
<! II
~ 1.0 1.0
0
z
on
S
0
VrE1'I ni i lV: \0 v -
ttl
'"<i' 0.7 ~
O.S ......,... ./
<.0 w VBElsatl@ICIIB: 10
<.0 ./.
~
~
~
=>
0.5
" '\ '"
S
0
>
0.6
0.4
V
u
u
0
0.3
1\ 0.2 """
VCEI7tl@IC/IB 10 ./
~ p
0.2 0 IIII
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC,COLLECTOR CURRENT ImAI IC, COLLECTOR CURRENT ImAI
2-53
CASE31(1\
(10-5) PNP germanium transistor, ·for high-gain amplifier
All leads isolated
and switching service in the audio frequency range.
MAXIMUM RATINGS

Collector to Base Voltage VCB 30 Volts
Collector to Emitter Voltage VCER 25 Volts
Emitter to Base Voltage VEB 25 Volts
Collector D. C. Current * IC 250· rnA
Junction Temperature Limits TJ -65 to +100 ·C
Storage Temperature Limits Tstg -65 to +100 ·C
Collector Dissipatton in, Ambient PD 200 mW

Derate 2.67 mW/·C above 25·C
Thermal ReSistance, Junction to Ambient 6JA 0.375 ·C/mW
.Limited by power diSSipation.
2N653 2N654 2N655

Characteristics Symbol Unit
Min Typ Max Min Typ Max Min Typ Max
VCE .. 6 V, IE .. 1. 0 mA, I .. 1 kHz
hie 30 49 70 50 80 125 100 130 250 -
Small Signal Input Impedance
VCE = 6 V, IE .. 1. 0 mA, I .. 1 kHz
hie 750 - 2900 1500 - 4700 3000 - 8500 ohms
Small Signal Current Gain Cutoff

Frequency fab 1.5 2.0 2.5 MHz
VCB = 6 V, ~ - 1. 0 mA
Output Capacity Cob 10 10 10 pF
VCB .. 6 V, ~ • 0 mA, I,. 1 MHz
Noise Figure NF 10 10 10 dB
=
VCE 4. 5 V, IE .. O. 5 mA,
= =
R,. I, f kHz
.1f-lHz
Collector Reverse Current ICBO 5.0 15 5.0 15 5,0 15 pA
VCB - 25 V, ~ =0
5.0 5.0 5.0 15 pA
Emitter Reverse Current
VEB -25V,Ie=0
~BO 15 15
Collector-Emitter Reverse Current 600 600 600 p:A

leER
VCE " 25 V, RaE 10k =
Base-Emitter Input Voltage VBE 0.3 0.3 0.3 Vdc
VCE - 6 V, IC =1. 0 mA
2-54
SMALL SIGNAL CURRENT GAIN (hf.)

versus TEMPERATURE POWER-TEMPERATURE DERATIHG CURVE
1000 220
800
800
200 -- -- "'\ - - 'y- 8 Jc • O.2'·CI .... IInod
...
.. 400 .. 180
....
•
N i:::; 160 "- \. \ r\
ti 200 :::! 140
,.,. V V \
VeE" 6 VOLTS :I
'"...
~
~
100
80
r: IE = I MA ~ 120
~
:100
'-
'\ 1\
II.
0 60
;;;
8JA ·0.375"CfI•• C.... ) ~ \
...z ~ 80
~
VeE" I VOLT-
1\
"
40 io'
IE" 50 MA-= ...
'"a:u :!
o
60
ALL TYPES ]\\
'"
A.
20
ALL TYPES .... 40
'\
20 ~
o
-80 -60 -40 -20 0 20
JUNCTIOH TEMPERATURE ac
40 80 80 100
o
o ~ w ~
1
~ ~
AMBIENT OR CASE TEMPERATURE 'C
~ ro ~ ~
" ~
LARGE SIGNAL CURRENT GAIN

versus COLLECTOR CURRENT
OUTPUT CURRENT versus BASE DRIVE VOLTAGE BASE TO EMITTER VOLTAGE (Vse) VOLTS
.......
250 180
.
IE
.2N61 ""-I
\;l5; 160
VCO' I VOLT
:I 200
c
I f"-..- 2N653 . 140
L/1
:::;
~ veE' I VOLT ...
-..
~
:I
150
~
z
120
.......
~
=
. 100
....
...
z
JV / .I Z .......... r 2N655
- '"
IE
~ 80
IE
.........
'" ~ '-
100 IE
u
k r--2N654
~~ ~/
:>
IE
....0
u 60
.... 1"-....
U
Q
-.
...u....
...
50
V./
4 O~
l"'-I - 1- 1-_
-
~
0
u 0
2N653- V
o o ..1
o """'"0.2 0.4 0.6 0.8 o 20 40 60 80 100 120 140 160 180 200
BASE TO EMITTER VOLTAGE (VIII VOLTS COLLECTOR CURRENT Ci.) MILLIAMPERES
2-55
2N656 (SILICON)
2N657
NPN SILICON ANNULAR TRANSISTORS

NPN SILICON
. NPN silicon annular transistor designed for small-signal amplifier ANNULAR TRAN~STORS
and general purpose switching applications.
• High Collector·Emitter Breakdown Voltage -

BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657
• High Emitter-Base Breakdown Voltage -
BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde
*MAXIMUM RATINGS
Rating Symbol 2N656 2N657 Unit
Collector-Emitter Voltage VCEO 60 100 Vde
Collector-Base Voltage VCB 60 100 Vde
Emitter-Base Voltage VEB 8.0 Vde
Total Device Dissipation @ T A - 2SoC PD 1.0 Watt
Derate above 2SoC 5.7 mW/oC
Total Device Dissipation @ Teo:: 25°C PD 4.0 Watts
Derate above 25°C 22.B mW/oC
Operating and Storage Junction TJ,Tstg -65 to +200 °c
Temperature Range
*ElECTR ICAl CHARACTER ISTICS (TA = 25°C unless otherwise noted 1 0335 OIA
0.370 -+---1
Ii
::"wj1=1
QlQ.~ DIA ~ 0.240
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCEO Vde H.·.
lie = 250~Ade, IB = 01
Collector-Base Breakdown Voltage

2N656
2N657
BVCBO
60
100
-
-
Vde
0019 I
15
~ILJ
(lC = 100~Ade, IE = 01 2N656 60 -
2N657 100 -
Emitter-Base Breakdown Voltage BVEBO B.O - Vde
liE = 250~Ade, IC = 01
Collector Cutoff Current ICBO - 10 ~Ade
(VCB = 30 Vde, IE = 01
ON CHARACTERISTICS
DC Current Gain(1) hFE 30 90 -
(lC = 200 mAde, VCE = 10 Vdel
Collector-Emitter Saturation Voltage(1) VCE(satl - 4.0 Vde
lic = 200 mAde, IB = 40 mAdel
SMALL·SIGNAL CHARACTERISTICS
Input Impedance(1)
liB = 8.0 mAde, VCE = 10 Vdel
* Indicates JEDEC Registered Data. CASE 31

(1)Pulse Test: Pulse Length = 300 MS, Duty Cycle '$ 2.0%. ITO-5)
2-56
2N665 (GERMANIUM)
CASE~
(TO-3)
PNP germanium power transistor for driver and
power output amplifier and power switching applica-
tions in military and industrial equipment.
MAXIMUM RATINGS

Emltter-Base Voltage VEB 40 Vdc
DC Collector Current Ie 3.0 Amp
DC Emltter Current IE 5.0 Amp
Collector JWlCtion Temperature TJ -85 to +95 °c

Collector Dissipation PD 35 watts
Derate above 25°C 0.5 W/oC

(V EBO • -40 Vdc, Ie = 0) - 2.0
Collector Cutoff Current IeBO mAdc
(VCBO = -2 Vdc, If = 0)
---
0.05
(VCBO = -80 Vdc, E = 0) :2.0
(VCBO = -80 Vdc, IE = 0) 10
DC Current Gain
(VCE = -2 Vdc, Ie = -0.5 Adc)
bFE
40 80 --
(VCE = -2 Vdc, Ie = -2 Adc) 20 -
Emitter-Base Voltage VEB Vdc
(VCE = -2 Vdc, Ie = -2 Adc) - 1.5
Floatinc PotenUal VEBF Vdc
(VCS = -80 Vdc, voltmeter input
r8sistaace = 10 megohms min, t • 1 sec) - 1.0
Collector-Emitter S.turaUon Voltage VCE(sat) Vde
(Ie = -3 Adc, IB = -220 mAde) - -0.9
Collector-Emitter Voltage VCEO Vde
(Ie = -300 mAde, IS = 0) 40 -
Transfer-RaUo Cutoff Frequency fae kHz
(VCE = -14 Vdc,lc = -2 Ade) 20 -
(VEBO = -30 Vdc, Ie = 0, TC = +71OC min) - 2.0
(VCBO = -30 Vde, IE • 0, TC = +71 oC min) - 2.0
2-57
2N665 (continued)
hFE.versus TEMPERATURE
200
180
/ le -2A Yco - 2Y /
u
..,
0
160 / ./
-
N
le- 0•5A ...... ./
!C 140 /
......
II!
120 ./ ~
0
';/I. 100
80
-60 -40 -20 o 20 40 60 80 100
Te. CASE TEMPERATURE (OC)
The Safe Operating Area

Curves indicate Ic - V CE
limits below which the device SAFE OPERATING AREA
will not go inio secondary
breakdown. Collector load
lines for specific circuits must 5ms Ims
fall within the applicable Safe
Area to avoid causing a col-
lector-emitter short. (Duty
cycle of ~he excursions make
no significant change in these
safe areas.) To insure opera-
tion below the maximum T J •
the power-temperature de- fC'
rating curve must be ob- ~ 2
served for both steady state
and pulse power conditions. ...IEa:a:
=>
u
a:
POWER-TEMPERATURE DERATING CURVE I'!
40 fd
::::l
0
u
1"-.., ..§
I
I
I
I
~
I
I
I
~
o
o
i 40 60
~
80 100
o 10 20 30 40 50 60 70
Te. CASE TEMPERATURE loe) Ya • COWCTOR-EMlmRVOlTAGE (VOLTS)
2N669 (GERMANIUM)
2-57A
CME2~
Industrial-type, silicon controlled rectifiers in a stud package
with current handling capability to 25 amperes at junction
temperatures to 1250 C. MCR equivalents available in TO-48
package - i.e. - 2N681 available in T0-48 package as MCR681.
\
MAXIMUM RATINGS (T.. = 12S·C unless otherwise noted)

Peak Reverse Blocking Voltage. t VRSM(rep)*t Volts
2N681 25
2N682 50
2N683 100
2N684 150
2N685 200
2N686 250
2N687 300
2N688 400
2N689 500
Peak Reverse Blocking Voltage. V RSM(non-rep) * Volts
(Transient) 2N681 35
(non~recurrent t = 5 ms max.) 2N682 75
2N683 150
2N684 225
2N685 300
2N686 350
2.N687 400
2N688 500
2N689 600
Forward Current RMS (all conduction angles) IT 25 Amp
Peak Forward Surge Current TTSM Amp

(One cycle, 60 Hz, T J = ~65 to +125 0 C) 200
Circuit Fusing Considerations J2t A2s

(T J = -65 to +125 0 0, t ;;; 8.3 ms) 165
Peak Gate Power~Forward PGM 5.0 Watts
Average Gate Power~Forward PG(AV) 0.5 Watt
Peak Gate Current~Forward IGM 2.0 Amp
Peak Gate Voltage-Forward VGFM 10 Volts

Reverse VGRM 5.0
Operating Junction Temperature Range TJ -65 to + 125 °c

Stud Torque - 30 in. lb.
tv RSM for all types can be appUed on a continuous dc basis without incurring change.
• VRSM(rep) ratings apply for zero or negative gate voltage.
2-58
ELECTRICAL CHARACTERISTICS (Tc = 2S0C unless otherwise noted)
Characteristic Symbol Min Typ Max Units
Peak Forward Blocking Voltage VORM Volts

(T J ; 125°C) 2N681
2N682
25
50
-- -
-
2N683 100 - -
--
--- -
2N684 150
2N685 200
2N686 250
- --
2N687 300 -
2N688 400
2N689 500 - -
Peak Forward or Rever/3e Blocking Current IORM mA
(T J ; 125°C) 2N681 - 2N684
2N685
IRRM -- -- 10.0
10.0
--- ---
2N686 10.0
2N687 10.0
2N688 8.0
2N689 - - 6.0
Gate Trigger Current (Continuou/3 dc) IGT mA

(Anode Voltage; 7 Vdc, RL = 50 11) - 10 25
Gate Trigger Voltage (Continuou/3 dc) VGT Volt/3

(Anode Voltage = 7 Vdc, RL = 50 11) 0.25 - 3.0
Holding Current IH mA
(Anode Voltage = 7 Vdc, Gate Open) - 20 -
Forward On Voltage VTM Volt$
(IT = 20 Adc) - 1.1 1.5
Turn-On Time tgt /is

(IT ; lOA, IG ; 200 mAl - 1.0 -
Turn-Off Time tq /is
(IT = 10 A; IR
TJ ; 125°C)
= 10 A, dv/dt ; 30 V/p.s min, - 30 -
(VORM; rated voltage)
Forward Voltage Application Rate dv/dt V/ /is

(Gate open, TJ = 125°C) - 30 -
Thermal Resistance (Junction to Case) 9J C - 1.0 2.0 °C/W
2-59
,MAXIMUM ALLOWABlE
FORWARD GATE CURRENT GATE TRIGGER CHARACTERISTICS FDRWARD CONDUCTING CHARACTERISTICS
2.0 IGM-2AMP ".
~JOO
3 VOLTS MINIMU
1.0
GATE VOLTAGE
REQUIRED TO ~ 50
z'
.~ .~
TRIGGER
,~
~U!!ITS '" 20
·7
0.5 ::. TYPICAL~ 'I ,,'/ _MAXIMUM
Q;
21
-
.... :i
....=z~
f .. +
AS A TRIGGER CIRCUIT DESIGN CRITERIA
ALL UI'tITS WILl TRIGGER AT ANY VOLTAGE
AND CURRENT WITHIN THIS AREA
~ 10
~
~ 0.2
is
~ 0.1
<.>
i>-I! e
f!!~!:
z!ci!=
~ iii
~II
I- 40 mA MINIMUM
GATE CURRENT REQUIRED
TO TRIGGER ALL UNITS
(l25'C - 2S mAl
o
~ 2.0
::.
Sl 1.0
5.0
I I /
TJ
TJ
12S'C-
2S'C"-
~.05 ~t.
(-6S'C - 80 mAl
z
..2
z
TYPICAL
--------- ;:: 0.5
~~ 0.2
TRIGGER POI,NT MAXIMUM ALLOWABLE FORWARD
GATE VOLTAGE 10 VOLTS
J::. 0.1 II II
o 3 4 5 6 7 8 9 10 O.n , 0.5 1.0 1.5 2.0 2.5,
VGT. GATE VOLTAGE (VOLTS) VT.INSTANTANEOUS FORWARO ON VO LTAGE (VOLTS)
0.25 (TJ = 2S'C - AN,OOE @ 7 VOLTS)
CURRENT DERATING SUGGESTED FIN SIZES
IT(AV). AVERAGE FORWARO CURRENT ,(AMP)
2-60
2N696 (SILICON)
2N697
NPN silicon annular transistors designed for small-

CASE 31 signal amplifier and general purpose switching appli-
(TO-5) cations.
MAXIMUM RATINGS
Collector-Emitter Voltage VCER 40 Vdc
Total Device Dissipation @ T A = 25°C PD 0.6 watt
Derate above 25°C 13.3 mWrC
Total Device Dissipation @ TC = 25°C PD 2.0 Watts
Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25 0 C unless otherwise noted.)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage" BVCER" Vdc
(Ic = 100 mAdc, RBE = 10 ohms) 40
Collector-Base Breakdown Voltage BVCBO Vdc

(IC = 100 j.tAdc, IE = 0) 60
Emitter-Base Breakdown Voltage BV EBO Vdc

(~ = 100 !.LAdc, IC = 0) 5.0
Collector Cutoff Current ICBO !.LAdc

(V CB = 30 Vdc, ~ = 0) - 1.0
(VCB= 30 Vdc, IE = 0, T A = 1500 C) - 100
ON CHARACTERISTICS
DC Current Gain.
hFE• -
(IC = 150 mAdc, VCE = 10 Vdc) 2N696 20 60
2N697 40 120
Collector-Emitter Saturation Voltage· VCE(sat)
. Vdc
(IC = 150 mAdc, ~ = 15 mAdc) - 1.5
Base-Emitter Saturation Voltage· VBE(sat)* Vdc

(IC = 150 mAdc, IB = 15 mAdc) - 1.3
Current Gain-Bandwidth Product fT MHz
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)' 2N696 40 -
2N697 50 -
(V CB = 10 Vdc, ~ =.0) - 35
• Pulse Test: Pulse Length ::; 12 ms, Duty Cycle::; 2.0%.
2-61
2N699 (SILICON)
NPN silicon annular transistor designed for

medium-current switching and amplifier applications.
CASE 79
(TO·39)
Collector connected to casit
MAXIMUM RATINGS

Total Device Dissipation TA :::; 25"C PD 0.6 Watt

Derate above 25° C 4.0 mW/"C
Total Device Dissipation T ;;; 25°C Pn 2.0 Watts
C
Operating Junction Temperature TJ 175 °c
Storage Temperature Range T -65 to +200 °c

stg
Thermal Resistance, Junction to Case eJC 75 °C/W
Thermal Resistance, Junction to eJA 250 °C/W

Ambient
2-62
2N699 (continued)
.ELECTRICAL CHARACTERISTICS (T A = 2S'C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage* BVCER* Vdc
(IC = 100 mAdc, RBE ~ 10 ohms) 80 -
Collector Cutoff Current I CBO IJ.Adc
(V CB = 60 Vdc, IE = 0) - 2.0
(VCB = 60 Vdc, IE = 0, TA = 150°C) - 200
Emitter Cutoff Current lEBO IJ.Adc

(V EB = 2. 0 Vd~, IC = 0) - 100
ON CHARACTERISTICS
DC Current Gain* hFE * -
(IC = 150 mAdc, V CE = l(i"Vdc) 40 120
Collector-Emitter Saturation Voltage* V * Vdc

CE(sat)
(IC = 150 mAdc, IB = 15 mAdc) - 5.0
Base-Emitter Saturation Voltage* V * Vdc

BE(sat)
(IC = 150 mAdc, IB = 15 mAdc) - 1.3
SMALL SIGNAL CHARACTERISTICS

Current-Gain - Bandwidth Product fT MHz
(I C = 50 mAdc, VCE " 10 Vdc,
f = 20 MHz) 50 -
(V CB = 10 Vdc, IE "0, f " 100 kHz) - 20
Input Impedance h ib ohms

(I C " 1. 0 mAdc, VCB = 5.0 Vdc,
f " 1.0 kHz) 20 30
(IC = 5.0 mAdc, V CB = 10 Vdc,
f " 1. 0 kHz) - 10
Voltage Feedback Ratio h rb X 10- 4
(IC " 1. 0 mAdc, VCB " 5.0 Vdc,
f = 1.0 kHz) - 2.5
(I C = 5.0 mAdc, VCB " 10 Vdc,
f " 1. 0 kHz) - 3.0
(IC " 1. 0 mAdc, V CE = 5.0 Vdc,
f " 1. 0 kHz) 35 100
(IC " 5.0 mAdc, VCE " 10 Vdc,
f " 1.0 kHz) 45 -
Output Admittance hob Ilmhos
(IC " 1. 0 mAdc, VCB " 5.0 Vdc,
f " 1. 0 kHz) O. 1 O. 5
(IC " 5.0 mAdc, VCB = 10 Vdc,
f " 1. 0 kHz) - 1.0
* Pulse Test: Pulse Width ~ 300 IlS; Duty Cycle ~ 2%.
2-63
2N700,A (GERMANIUM)
PNP germanium mesa transistors for oscillator,

CASE 21 frequency multiplier, wide- band mixer and wide- band
(TO-17) amplifier applications.
MAXIMUM RATINGS
Collector-Emitter Voltage VCEO Vdc

2N700 20
2N700A 25
Collector DC Current Ie 50 mAdc
Junction Temperature TJ 100 °c

Storage Temperature Tstg -65 to +100 °c
Total Device Dissipation PD 75 mW
at 25 0 C Ambient mW;oC
Derate above 25 0 C 1.0
POWER GAIN CURRENT GAIN, CURRENT·GAIN-BANDWIDTH PRODUCT

& NOISE FIGURE versus FREQUENCY versus CURRENT AND VOLTAGE
40 1 1000
I I =III
30 f--powt GAIN
.g
~
...
%
800
V
~
- I, @
r- ~.
-6
Ve• Vde
-
C
"'" "
~ 600
~
:;
!!! 20
:.l
co
h••
Vel = -6Ydc
I, =2 mAde
"'" "- z
400 II Veo @ I, =2 mAde
~
10
NOISE FIGURE
I
"-> I''\. i... 200
/
I'
~
"
::>
<>
o
2 10 20 50 100 200 500 1000 " °o 2.0 4.0 6.0 8.0 10 12 14 16
t. FREQUENCY (mHz, I,. EM ITTER CURRENT (mAde)
Ye•• COlLECTOR - BASE VOLTAGE (VOLTS)
2-64
2N700,A (continued)
Characteristic Sym Test Conditions Types Min Typ Max Unit

~olleetor-Base BVCBO IC = 100 /lAde, IE = 0 All Types 25 32 - Vdc
~reakdown Voltage
~olleetor-Emitter BVCEO IC = 100 /lAde, IB = 0 2N700 20 - - Vde

~reakdown Voltage 2N700A 25 - -
Emitter-Base
~reakdown Voltage
BV EBO IE = 100 /lAde, IC = 0 All Types 0.2 0.5 - Vde
Collector Cutoff leBO VCB = 6 Vde, IE = 0 All Types - 0.4 2.0 /lAde
Current
VCB =.6 Vde, IE = 0,T A =85 0 C 2N700 - 60 150
2N700A - - 50
Small Signal hfe IE = 2 mAde, VCE = 6 Vde, f = 1 kHz All Types 4.0 10 - -
Forward Current
Transfer Ratio IE = 5 mAde, VCE = 6 Vde, f = 1 kHz 2N700A - - 50 -
IE = 2 mAde, VCE = 6 Vde, f = 200 MHz 2N700 2.5 7 - -
2N700A 5.0 - - -
Input Impedance hib IE = 2 mAde, VCB = 6 Vde, f = 1 kHz All Types - 17 30 Ohms
Base Resistance
I
rb IE = 2 mAde, VCB = 6 Vde, f = 300 MHz All Types - 55 100 Ohms
Collector-Base Cob VCB = 6 Vde, IE = 0, f = 100 kHz 2N700 - 1.1 1.5 pF

putput CapaCitance
(case grounded)
2N700A - - 1.4
Power Gain Ge IE = 2 mAde, VCB = 6 Vde, f = 70 MHz

2N700 20 23 - dB
(neutralized) 2N700A 22 - -
Noise Figure NF All Types - 6.0 10 dB
Power Gain Ge IE = 2 mAde, VCB '= 6 Vde, f = 30 MHz
(neutralized) 2N700A 26 - - dB
2-65
2N702 (SILICON)
2N703
NPN silicon annular transistors designed for low-

level, high-speed switching applications.
MAXIMUM RATINGS (T." 25'C unless otherwise noted)

Collector·Emitter Voltage VCEO 25 Vdc
Collector·aase Voltage Vca 25 Vdc
Emitter·aase Voltage YEa 5.0 Vdc

CASE 22
(TO·18) Total Device Dissipation @TA = 25' C PD 300 roW
Derate above 25' C 2.0 mW/'C
Total Device Dissipation @T C = 25' C PD 600 mW
Operating and Storage Junction T stg .65 to ...175 'c
Tem~_erature Range
ELECTRICAL CHARACTERISTICS (T." 25'C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter areakdown Voltage av CEO Vde
(IC =2.0 mAde, la =0) 25 · -
Collector-a1/-.. Breakdown Voltage avCOO Vde
(IC = 5.0 I'Adc, IE = 0) 25 - -
Emitter·aase areakdown Voltage BV EOO Vde
(IE = 10 I'Adc, IC =0) 5.0 - -
Collector Cut911 Current ICEO I'<\dc
(VCE =20 Vde, IB = 0) - - 10
Collector .Cutoll Current ICOO I'Adc

(V CB =10 Vdc, ~ =0) - · 0.5
(VCB = 10 Vde, IE =0, TA =+150'C) - - 50
ON CHARACTERISTICS
DC Current Oain'
(IC = 10 mAdc, VCE =5.0 Vdc) 2N702
hFE
. 20 - 60
-
2N703 40 · 100
.-
(IC =10 qlAde, VCE =5.0 Vdc, TA =-55'C) 2N702 12 ·
Collector·Emitter Saturation Voltage'
(IC = 10 mAde, IB =1. 0 mAde)
2N703
V CE(sat)
. 20
.
·
- 0.5
Vde
aase-Emitter On Voltage" Vdc

VBE(on)"
(IC =10 mAde, VCE =5.0 Vde) 0.7 · 0.95
SMALL 'SIGNAL CHARACTERISTICS

Current·Gain - Bandwidth Prnd1,1ct IT MHz
(~ = 10 mAde, VCE =5· 0 Vde, I =100 MHz) 70 150
Output Capacitance COb pI"

(V CB = 5.0 Vde, ~ = 0, f = 1. 0 MHz) - 3.0 6.0
·Pulse Test: Pulse Width =300 1'8, Duty Cycle = 2.0%.
;2-66
2N705 (GERMANIUM)
PNP germanium mesa transistor for high-speed

CASE 22
(TO-18) " switching applications ..
olleetor connected to else
MAXIMUM RATINGS
Collector - Emitter Voltage VCES 15 Vdc
Emitter Current IE 50 mAdc
Junction· Temperature TJ 100 °c
Storage Temperature Tatg -65°C to +100 °c
Collector Dissipation @ TC = 25°C Pc 300 mW

Collector Dissipation in Free Air Pc 150 mW
NORMALIZED D.C. CURRENT GAIN COLLECTOR SATURATION VOLTAGE

versus COLLECTOR CURRENT versus AMBIENT TEMPERATURE
10 ~ O.3
8
6 g V
~ve.=IJ
! 0.2 5
.......... P
2.0
+~ j....--
> Ie = 25 mAde V
~
,.. VI-"
Te'e...
:c L--
1. 0
O. 8
O. 6
+25·C
.,. i O•
2
Ie = 10 mAde l--'"
I---'
~
~
-
/'
---
I---'
~~ 0.1 5
55·C
O. 4
O. 2 --I-- V
----/
8
~ 'ell, = 10
..,V
O. I
QI O~ 05 I~ 2~ 5 10 20 50 100 ->~ o.1
-75 -50 -25 +25 +SO +75 +100
Ie. COUECTOR CURRENT (mAdel
T•• AMBIENT TEMPERATURE (·CI
2-67
2N705 (continued)

(IC = 100 /.lAde, IE =0)
BVCBO 15 - - Vde

(ICE = 100 /.lAde, VBE =0)
BVCES 15 - - Vde
Emitter-Base Breakdown Voltage

(IE = 100 /.lAde, IC =0)
BV EBO 3.5 - - Vde
Collector Cutoff Current

(V CB = 5 Vde, ~E = 0)
I CBO - 0.2 3.0 /.lAde
DC Forward Current Transfer Ratio

(V CE = .3 Vde, IC = 10 mAde)
hFE 25 40 - -
Collector Saturation Voltage
(I B = .4 mAde, IC = 10 mAde)
VCE(sat) - O. 18 0.3 Vde
(IB = 5 mAde, IC = 50 mAde) - 0.45 -

Base-Emitter Voltage VBE 0.34 0.39 0.44 Vde
(IB = .4 mAde, IC =10 mAde)
Small Signal Forward Current Transfer Ratio

(V CE = 1. 0 Vde, IC = 10 mAde, f = 100 MHz)
hfe - 9.0 -
Collector Capacitance
(V CB = 10 Vde, IE = 0, f = 1 MHz)
Cob - 5.0 - pF
Input Capacitance
(VBE = 2 Vde)
Cib - 3.5 - pF
Common Base Alpha Cutoff Frequency fab - 300 - MHz

(V CB = 5 Vde, IC = 10 mAde)
Delay + Rise Time

(IC = 10 mAde, 1J = 1 mAde)
td + tr - 55 75 ns
Storage Time
(1Jl = 1.0 mAde, 1J2 = .25 mAde)
t
s - 65 100 ns
Fall Time
(IBI = 1. 0 mAde, 1J2 = . 25 mAde)
tf - 70 100 ns
CURRENT GAIN - BANDWIDTH PRODUCT (fT)

STORAGE TIME versus CIRCUIT CURRENT RATIO versus COLLECTOR CURRENT
-----
100
~oo
~
z Ie =25 mAde
§ i
-
80 400
:g
z
""~ ....
g 300
v-
--
TA = 25"C
~
/
Q
£'0
;::
111 =41 11 - f:z:
~ R.=IOOn ~ 200
I
~.: I -10 mAde
i VeE= 1 Vdc
40 R,-IK!!_
i TA =25°C
0
- z
~
.i
100
0
10 l~ 20 o 10 20 30 40 50
Ie/I,,, CIRCUIT CURRENT RATIO Ie. COllECTOR CURRENT (mAdel
2-68
2N706 ,A, B (SILICON)
(2N706JAN AVAILABLE)
2N753
NPN silicon annular switching transistors for high-
\
speed switching applications.
CASE 22
(TO-IS)
MAXIMUM RATINGS

Collector-Emitter Voltage " VCER" 20 Volts
Emitter-Base Voltage 2N706 VEB 3.0 Volts

2N7'06A 5.0
2N706B 5.0
2N753 5.0
Junction Temperature TJ 175 °C
Storage Temperature Tstt,< -65 to ,175 °c
Total Device Dissipation PD 1.0 Watt

at 25 0 C Case Temperature,
(Derate 6.67 mW7°C above 25°C)
Total Device DiSSitatiOn PD 0.3 Watt

at 250 C Ambient emperature
(Derate 2 mW/oC above 25°C)

at 1000C Case Temperature
(Derate 6.67 mW/oC above 10OOC)
·Refers to col/ector breakdowII voltage ill the high current region when R,,. = JOn
2-69
2N706,A,B,2N753 (continued)

Characteristic Type Symbol Min Typ Max Unit
Collector Cutoff Current ICBO j.lAdc
(VCB = 15Vdc, IE = 0) All Types - 0.005 0.5
(VCB ~ 15Vdc. IE = 0, TA = 150 0 C) All Types - 3.0 30
(VCB = 25Vdc. IE = 0) 2N706A. 2N706B,
2N753 - - 10
Collector- Emitter Cutoff Current ICER /LAde
(VCE = 20Vdc. Rbe = lOOk) 2N706A, 2N706B,
2N753 - - 10
Emitter Cutoff Current lEBO j.lAdc

(VEB = 3Vdc, fc = 0) 2N706 - - 10
(VEB = 5Vdc, Ic = 0) 2N706A. 2N706B,
2N753
- - 10
Collector-Emitter Breakdown Voltage· Vde

( IC = 10mAde,IB = 0)
BVCEO'
15 -
COllector-Emitter Breakdown Voltage. BVCER' Vde
(R = 10 ohms, fc = 10mAdc) 20 -
Forward-Current Transfer Ratio' hFE'
(fc = 10mAdc, VCE = IVdc) 2N706
2N706A, 2N706B,
20
20
40
40
-60
2N753 40 - 120
Base-Emitter Voltage' VBE(sat)' Vde
(Ie = 10mAdc, IB = lmAdc) 2N706
2N706A, 2N706B,
- 0.75 0.9
2N753 0.7 0.75 0.9

Collector Saturation Voltage' VCE(sat)· Vde
(Ie = 1000dc, IB = lmAdc) 2N706, 2N706A
2N706B
-- 0.3
0.3
0.6
0.4
(Ie = 50mAdc, IB = 5mAde)

2N753
2N753
-- 0.18
0.3
0.6
-
Collector C~acitance COb pF
(VCB = 5V c, IE = 0 2N706A, 2N706B,
2N753 - 4.5 5.0
(VCB = 10Vdc, IE = 0) 2N706 - 5.0 6.0
Small-Signal Forward Current Transfer Ratio

(VCE = 15Vdc, IE = 10mAdc,
hfe -
f = looMHz) 2.0 4.0 -
Current Gain- Bandwidth ·Product fT MHz
(VC~ = 15Vdc, IE = 1000de,
f = 00 MHz) - 400 -
Base Resistance rb ohms
(VCE = 15Vdc. IE = 10mAdc,
f = 300 MHz) - 39 50
Charge Storage Time Constant T •• ns
2N706 s - 16 60
2N706A - 16 25
2N753 - 19 35
Storage Time 2N706B ts - 19 25 ns
Turn-On Time ton·· - 30 40 ns

Turn-Off Time toff·' - 50 75 ftS
, Pulse Test: PW:s 12 ms, Duty Cycle:s 2%

** Switching Times Measured with Tektronix Type R Plug-In (50!Hnternal Impedance) and CirCuits Shown Below.
SWITCHING TIME TEST CIRCUIT STORAGE TIME TEST CIRCUIT MEASUREMENT CIRCUIT
Type RSampling Resistor
20U
Pulse Volts Pulse Volts
Internal Resistance Internal Resistance
+7V n 20~
UK +5VFl:50~ l50n
~rv~- -I: o-J,JII\r-A,JVv-+--l OV - - - - - ()-"VV'v-'I(VI.';---!.
_4V
2-70
2N707, A(SILICON)
NPN silicon epitaxial mesa transistors for VHF

CASE 22 oscillator and class C amplifier applications.
(TO-18)
MAXIMUM RATINGS
Rating Symbol 2N707 2N707A Unit

Collector-Emitter Voltage VCEO - 40 Vdc
Collector-Emitter Voltage VCER Vdc

(R BE ~ 10 ohms) 28 -
Collector-Base Voltage VCB 56 70 Vdc
Emitter-Base Voltage VEB 4.0 5.0 Vdc
Total Device Dissipation @ T A = 25°C PD 0.3 0_ 5 Watt

Derate above 25 0 C 2.0 3_33 mW/oC
Total Device Dissipation @ T C = 25°C PD 1.0 1.2 Watts

Derate above 25 0 C 6.67 8.0 mW/oC
Operating and Storage Junction TJ,Tstg °c

Temperature Range -65 to + 175
3:1
50 n Air 50 fl
180 pF 2N707 (Note 1)
Input 2N707A 0.001 /IF
Core Output
4-30
pF -
RFC 0.17
1.8 Ll L2
J.LH
/lH
2)
.01 J.LF
+VCC (Note 4)
Note 1 Heat sink is required.
Note 2 Adjust for Class C operation.
Ll 5 turns #14 wire wound on Note 3 Very High conductance silicon
1/2" diameter. diode.
L2 2 turns #14 wire wound on L1 · Note 4 Adjust VCC for proper VCE
FIGURE 1 -100 MHz, CLASS C, COMMON BASE AMPLIFIER
2-71
2N707,A (continued)
Characteristic I Symbol IMin I Typ IMax]~

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (11 BVCEO Vdc
(Ic = 20 mAdc, IB '" 0) 2N707A 40 - -
Collector-Emitter Breakdown Voltage BVCER Vdc
(IC = 10 mAdc, RBE = 10 ohms) 2N707 28 - -
(IC = 10 pAdc, IE = 0) 2N707 56 - -
2N707A 70 - -
Emitter-Base Breakdown Voltage BVEBO Vdc
(IE = 100 pAdc, IC = 0) 2N707A 5.0 - -
Collector Cutoff Current ICBO ,.Mc
(VCB = 15 Vdc, IE = 0) 2N707 - 0.005 5.0
(VCB = 15 Vdc, IE = 0, T A = 150 C)
0
2N707 - 3.0 -
(VCB = 30 Vdc, IE = 0) 2N707A - 0.01 1.0
0
(VCB =30 Vtlc, IE =0, TA = 150 C) 2N707A - 5.0 100
Emitter Cutoff Current lEBO /.IAdc

(VBE = 4 Vdc, IC = 0) 2N707 - - 10
(VBE = 5 Vdc, IC = 0) 2N707A - - 100
ON CHARACTERISTICS'
(IC = 10 mAdc, VCE = 1 Vdc) 2N707 9.0 12 -
2N707A 9.0 - 50
Collector Saturation Voltage VcE(sat) Vdc
(IC '" 10 mAdc, IB = 1 mAdc) - 0.18 0.6
Base-Emitter Saturation Voltage VBE(sat) Vdc

(IC = 10 mAdc, IB = 1 mAdc) - 0.75 0.9
(IE = 15 mAdc, VCE = 10 Vdc) 70 350 -
Maximum Frequency of Oscillation f
max - 600 - MHz

(VCB = 10 Vdc, IE = 0) 2N707 - 4.0 10.0
(VCB = 5 Vdc, IE = 0) 2N707A - 4.0 6.0
Collector-Base Time Constant r' C ps

b c -
(IC = 10 mAdc, VCB = 10 Vdc, f = 4 MHz) - 80
FUNCTIONAL TEST
Power Output (Figure 1) Pout mW
(VCE = 20 Vdc, Pin = 50 mW) All Types 200 300 -
(VCE = 40 Vdc, Pin = 175 mW) 2N707A 400 - -
100-MHz Oscillator Efficiency '1
%
(VCE = 28 Vdc, IC = 40 mAdc) - 38 -
111 Pulse Test: Pulse Width S300 ps, Duty Cycle S2.0%.
2-72
2N708 (SILICON)
2N708 NPN silicon annular transistor for high-speed switch-
JAN, JTX AVAI LABLE ing applications.
if) "MAXIMUM RATINGS
~ Rating
Collector-Emitter Voltage
Symbol
VCEO
Value
15
Unit
Vdc
l\ Collector-Base Voltage
Total Device Dissipation @ T A - 25 u C
Vce
VEB
PD
40
5.0
360
Vdc
Vdc
mW
CASE 22 Total Device Dissipation @ T C - 2SoC PD 1.2 Watts
(TO-IS) TC = 100°C 680 mW
Collector Derate above 1000 C 6.9 mW/oC
connected to case Operating and Storage Junction Temperature Range TJ, T stg -65 to +200 °c
·Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS (T. = 25'C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCEO Vde
(IC = 30 mAde, IB = 0) 15 - -
Collector-Emitter Breakdown Voltage BV CER Vde
(IC = 30 mAde, RBE ~ 10 ohms) 20 - -
• Collector-Base Breakdown Voltage BVCBO Vde
(IC = 1. 0 ;.tAde, IE = 0) 40 - -
• Emitter-Base Breakdown Voltage BV EBO Vde
(IE = 10 ;.tAde, IC = 0) 5.0 - -
t Collector Cutoff Current I CEX ;.tAde
(VCE = 20 Vde, VBE = 0.25 Vdc, TA = +125"C) - - 10
• Collector Cutoff Current I CBO ;.tAde

(VCB = 20 Vde, IE = 0) - 0.005 0.025
(VCB = 20 Vde, IE = 0, TA = 150"C) - - 15
Emitter Cutoff Current lEBO ;.tAde

(V BE = 4.0 Vdc, IC = 0) - - 0.08
ON CHARACTERISTICS
• DC Current Gain hFE -
(IC = 0.5 mAde, VCE = 1. 0 Vde) 15 - -
(IC = 10 mAde, VCE = 1. 0 Vde) (Note 1) 30 - 120
(IC = 10 mAde, VCE = 1. 0 Vde, T A = -55"C) (Note 1) 15 - -
'Colleetor-Emitter Saturation Voltage Vde
VCE(sat)
(IC = 10 mAde, IB = 1. 0 mAde) - 0.2 0.4
(IC = 7.0 mAde, IB = 0.7 mAde, T A = -55"C to +125"C) - - 0.4
• Base-Emitter Saturation Voltage Vde

VBE(sat)
(IC = 10 mAde, IB = 1. 0 mAde) 0.72 - 0.80
(IC = 7.0 mAde, IB = 0.7 mAde, T A = -55"C) - - 0.90
ttCurrent-Gain-Bandwidth Product fT MHz
(IC = 10 mAde, VCE = 10 Vdc, f = 100 MHz) 300 450 -
(VCB = 10 Vdc, IE = 0, 100 kHz ~ f ~ 1. 0 MHz) - 3.0 6.0
• Extrinsic Base Resistance r' ohms

b
(IC = 10 mAde, VCE = 10 Vdc, f = 300 MHz) - - 50
• Storage Time t ns
s
(IC = IBI = IB2 = 10 mAde) - 15 25
-Indlcates JEDEC Registered Data.

tJEDEC Registration Defined as VCB == 20 Vdc.
ttJEDEC Registration Defined as fire'
Note 1: Pulse Test: Pulse Width .;,;;; 300 II- s, Duty Cycle';;;; 2.0%.
2-73
2N711 I A, B(GERMANIUM)
PNP germanium mesa transistors for high-speed

switching applications.
CASE 22
(TO-lS)
Collector
conneded to case
MAXIMUM RATINGS
Rating Symbol 2N711 2N711A 2N711B Unit
Collector-Emitter Voltage VCEO - 7.0 7.0 Vdc
Emitter-Base Voltage VEB 1.0 1.5 2.0 Vdc
Collector Current (Continuous) Ie 50 100 100 mAde
Emitter Current (Continuous) IE 50 100 100 mAde
Junction Temperature TJ • 100 • °c

Storage Temperature Tstg • -65 to+ 100 II °c
Device Dissipation@ TC = 25°C Po • 300
4.0
• mW
Derate above 25°C 4 • mWrC
Device Dissipation @ T A = 250 C Po • 150 • mW

Derate above 25°C • 2.0 • mWrC
2-74
2N711 ,A,B (continued)
ELECTRICAL CHARACTERISTICS (T A: 25°C unless otherwise noted)
Characteristic Sym Min Typ Max Unit

(Ie = 100 I'Adc, IE = 0) 2N711 12 - -
2N711A 15 - -
(Ie = 20 I'Adc, IE = 0) 2N711B 18 - -
Collector-Emitter Breakdown Voltage BVCES Vdc
(Ie = 100 I'Adc) 2N711
2N711A
12
14
-- -
-
(Ie = 20 ",Adc) 2N711B 15 - -
Collector-Emitter Breakdown Voltage BVCEO Vdc
(Ie = 5 mAde, IB = 0) 2N711A, 2N711E 7.0 - -
(IE = 0.1 mAde, Ie = 0) 2N711 1.0 - -
2N711A 1.5 - -
2N711B 2.0 - -
Collector-Base Cutoff Current I'Adc
IeBO
(VCB = 5 Vdc, IE = 0) 2N711 - 0.2 3.0
2N711A - - 1.5
(VCB = 10 Vdc, IE = 0) 2N711B - - 1.5
Emitter-Base Cutoff Current lEBO I'Adc
(V EB = 1 Vdc) 2N711A
2N711B
-- -
-
100
20
(IC : 10 mAde, VCE = 0.5 Vdc) 2N711
2N711A
20
25
30
-
-
150
2N711B 30 - 150
(Ie = 50 mAde, VCE • 0.7 Vdc) 2N711A, 2N711B 40 - -
Collector saturation Voltage VCE(sat Vdc
(Ie = 10 mAde, IB = 0.5 mAde) 2N711 - 0.2 0.5
2N711A - - 0.30
(Ie = 10 mAde, IB = 0.4 mAde) 2N711B - - 0.25
(Ie = 50 mAde, IB = 2 mAde) 2N711A - - 0.55
2N71~B - - 0.45
hre -
(Ie = 10 mAde, VCE = 5 Vde, f = 100 MHz) 2N711A, 2N711B 1.5 - -
(Ie = 10 mAde, VCE = 0.5 Vde, f = 100 MHz) 2N711A 1.1 - -
2N711B 1.2 - -
(Ie = 10 mAde, IB = 0.4 mAde) 2N711, 2N711A 0.30 0.38 0.44
2N711B 0.30 - 0.44
(Ie = .50 mAde, IB = 2 mAde) 2N711A 0.40 - 0.65
2N711B 0.40 - 0.65
Collector OUtput Capacitance Cob pF

(VCB = 5 Vde, IE = O,f= 1 MHz) 2N711A, 2N711B - - 6.0
(VCB = 10 Vde, IE = 0, f = 1 MHz) 2N711 - 5.0 -
Fall Time tr ns
Figure 1:
{ 2N711A
2N711B -- -
-
ISO
110
Figure 2:
{ 2N711A
2N711B
-
-
-- 110
100
2N711 - 90 ISO
Minority Carrier storage Time ts ns

{ 2N711A - - 150
Figure I: 2N711B
- - 140
{ 2N711A - - 120
Figure 2: 2N711B - -90 100
2N711 - 200
Delay Plus Rise Time ~+tr ns

Figure 1: { 2N711A, 2N711E - - 100
FIgur 2' { 2N711A, 2N711E
e. 2N711
-- -
70
75
100
2-75
2N711,A,B (continued)
SWITCHING CIRCUITS
FIGURE 1 FIGURE 2
-3.5Ydc
_,,,.
~
r:k"ACKMD
'UuUIN. INPUT
o
+1.25V
ax-"KT1IOII~"1
OREQUIVALEIft'
ov-=J- -F-
_SAyU ••
RISUID fALL TIME < I nl
::S::~~~'UIYALElU
COLLECTOR SATURATION VOLTAGE COLLECTOR SATURATION VOLTAGE

versus AMBIENT UMPERATURE STORAGE TIME versus CIRCUIT CURRENT RATIO
o.6
IJ
Ic = SOmAtIc
~
~
5
I-""
i 0.2
Ht~ ~
It.-
~
IClt:=- i-"'I""
I""'"
-60 -40 _20 0 +20 +40 +60 +80 +100

o.1
2 4 8 8 10 20 40 60 80 100
TA • AMBIENT TEMPERATURE lOCI Ie/I •• CIRCUIT CURRENT RATIO
NORMALIZED DC CURRENT GAIN STORAGE TIME versus

versus COLLECTOR CURRENT CIRCUIT CURRENT RATIO
10.0 250r----r----,r---,----,
8.0
6.0
I I I
Ve. =1 VOLT 200Ir--+-.!Io~-ir_--+--_i
4.0
--
!:
_~ +85"C
<Ii 2.0 !150~---r--~-~~+_--_;
I"" _S +25°C
~ ~-
!i!
;:::
1.0
~100~----+-~~+-----;-~--~
,
Co)
~ 0.8 io""'"
~ t;
~ 0.6 , ~
.:
V
i
- fII' ./ 50~--~--~---+_~~-;
0.4
~ ... "'" ,,/
,,~ ~SSOC
O~ ____~__~~__~~__~
0.2
o 5 10 15
O. 1
, ~" Icll., •CIRCUIT CURRENT RATIO
0.1 0.5 1.0 2.0 5.0 10.0 20.0 50.0 100.0

Ie. COLLECTOR CURRENT ImAl
2-76
2N 718
(SILICON)
2N1420
NPN silicon annular Star transistors for medium-

current switching and amplifier applications.
2N718 2N1420
CASE 22 CASE 31
(TO-IS) (TO-5)
MAXIMUM RATINGS

2N718 40
2N1420 30
2N1420 2N71S
TO-5 TO-IS
Total Device Dissipation at

25 0 C Case Temperature PD 3.0 1.5 Watts
Derating Factor Above 25 0 C 20 10 mW/oC

25 0 C Ambient Temperatures PD 0.6 0.4 watts
Derating Factor Above 25 0 C 4.0 2.66 mW/oC
Junction Temperature TJ + 175 °c
Storage Temperature range Tstg -65 to + 200 °c
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)

Collector Cutoff Current !LAdc
ICBO
(Vce = 30 Vdc, IE = 0) - _001 1.0
(Vca = 30 Vdc, IE = 0, TA = 150°C) - - 100
Collector- Base Breakdown Voltage BVCBO Vdc
(Ic = 100 !LAdc, IE = 0) 60 - -
Collector- Emitter Breakdown Voltage BVCER Vdc
(IC = 100 mAdc, pulsed; Re;; 10 Ohms)
2N718 40 - -
2N1420 30 - -
Collector- Emitter Saturation Voltage (11 Vdc
VCE(sat)
(Ie = 150 mAdc, IB = 15 mAdc) - 0_3 1.5
Base-Emitter Saturation Voltage(1) VBE(sat) Vdc
(IC = 150 mAde, IB = 15 mAdc) - - 1.3
(1) Pulse Test: PW ;:; 300 J1.S, Duty Cycle;:; 2%
2-77
2N 718, 2N 1420 (continued)
Cha racteristic Symbol Min Typ Max Unit

DC Forward Current Transfer Ratiotll
(IC = 1 mAde, VCE = 10 Vdc)
hFE -
2N718 - 20 -
2N1420 - 35 -
(Ie = 150 mAde, VCE = 10 Vdc)
2N718
2N1420
40
100
-- 120
300
2N718 - 20 -
2N1420 - 35 -
(Ie =50 mAde, VCE = 10 Vdc, f = 20MHz)
hfe
2.5 15 - -
Output CapaCitance Cob pF
(VCB = 10 Vdc, IE = 0) - 5.0 35
til Pu18e Test: PW ::; 300 jlS, Duty Cycle :i 2%
2-78
2N718A(SILICON)
2N718AJAN, JTX AVAI LABLE
2N956
2N1613
2N1613 JAN AVAILABLE
CASE 22 CASE 31
(TO-IS) (TO-S)
2N718A 2N1613
2N956 2N1711
NPN silicon annular Star transistors for high-speed

switching and DC to UHF amplifier applications.
MAXIMUM RATINGS
2N718A 2N1613
Emitter- Base Voltage VEB 7_0 Vdc
Total Device Dissipation @ TA = 25°C PD 500 800 mW

Derate above 25°C 2.86 4.57 mW/oC
Total Device Dissipation @ TC = 25°C PD 1.8 3.0 Watts
Operating and Storage Junction Temperature Range T J , Tstg -65 to +200 °c
2-79
2N718A, 2N956, 2N1613, 2N1711 (continued)
ELECTRICAL CHARACTERISTICS (T A = 2S'C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCER Vde
(IC " 100 mAde, pulsed; RBE ~ 10 ohms) 50 - -
C olleetor- Base Breakdown Voltage BVCBO Vde
(IC " 100 /lAde, IE" 0) 75 - -
Emitter-Base Breakdown Voltage BV EBO Vde
(IE" 100 /lAde, IC " 0) 7.0 - -
Collector Cutoff Current iJ,Ade
ICBO
(V CB " 60 Vde, IE" 0) - 0.001 0.01
(V CB " 60 Vde, IE "0, T A " 1500C) - - 10
Emitter Cutoff Current lEBO /lAde

(V BE " 5.0 Vde, IC " 0) 2N718A, 2N1613 - - 0.010
2N956, 2N1711 - - 0.005
ON CHARACTERISTICS
(IC " 0.01 mAde, VCE " 10 Vde) 2N956, 2N1711 20 - -
(IC " 0.1 mAde, VCE " 10 Vde) 2N718A, 2N1613 20 - -
2N956, 2Nl711 35 - -
(IC " 10 mAde, VCE " 10 Vde) 2N718A, 2N1613 35 - -
2N956, 2N1711 75 - -
(IC " 10 mAde, VCE " 10 Vde, T A " -55'C) 2N718A, 2N1613 20 - -
2N956, 2N1711 35 - -
(IC " 150 mAde, VCE " 10 Vde)* 2N71SA, 2N1613 40 - 120
2N956, 2N1711 100 - 300
(IC " 500 mAdc, VCE " 10 Vde)* 2N71SA, 2N1613 20 - -
2N956, 2N1711 40 - -
Collector-Emitter Saiuration Voltage' (11 VCE(sat) Vde
(IC " 150 mAde, IB" 15 mAde) - 0.24 1.5
Base-Emitter Saiuration Voltage (11 Vde

VBE(sat)
(IC " 150 mAde, IB " 15 mAde) - 1.0 1.3
(IC "50 mAde, VCE " 10 Vde, f" 20 MHz) 2N71SA, 2N1613 60
70
300 -
2N956, 2N1711 300
(VCB " 10 Vde, IE" 0, f" 100 kHz) - 4.0 25
Input Capacitance C ib pF
(V BE "0.5 Vde. IC "0, f " 100 kHz) - 20 SO
Input Impedane,,- ohms

\b
(I C " 1. 0 mAde, VCB " 5.0 Vde, f" 1. 0 kHz) 24 - 34
(IC "5.0 mAde, VCB " 10 Vde, f" 1. 0 kHz) 4.0 - S.O

(IC" 1.0 mAde, Vca" 5.0 Vde, f" 1.0 kHz) 2N718A, 2N1613 - - 3.0
2N956, 2Nl711 - - 5.0
(IC "5.0 mAde, VCB " 10 Vde. f" 1. 0 kHz) 2N718A. 2N1613 - - 3.0
2N956. 2N1711 - - 5.0
(IC " 1. 0 mAde. VCE " 5.0 Vde. f " 1. 0 kHz) 2N718A. 2N1613 30 - 100
2N956. 2N1711 50 - 200
(IC " 5.0 mAde. VCE " 10 Vde, f " 1. 0 kHz) 2N718A, 2N1613 35 - 150
2N956. 2N1711 70 - 300
Output Admittance hob /lffiho
(IC "1.0 mAde. Vca "5.0 Vde. f" 1.0 kHz) 0.1 - 0.5
(IC "5.0 mAde, VCB " 10 Vde. f" 1. 0 kHz) 0.1 - 1.0
Noise Figure NF dB
(IC " 300 iJ,Ade, VCE " 10 Vde. f" 1.0 kHz) 2N718A. 2N1613 - - 12
2N956, 2N1711 - - 8.0
(I) Pulse Test: Pulse Width ~ 300 iJS, Duty Cycle ~ 2.0%.
2-80
2N720A (SILICON)
NPN silicon annular transistor designed for small-

signal amplifier and general purpose switching appli-
cations.
CASE 22
(TO·18)
MAXIMUM RATINGS
Total Device Dissipation @ T A = 25°C PD 0.5 Watt

Derate above 25°C 2.86 mW;oC
Operating and Storage Junction -65 to +200 °c
Temperature Range T J' T stg
Thermal ReSistance, Junction to Case °JC 97 °C/W
2-81
2N720A (continued)
ELECTRICAL CHARACTERISTICS (T. =25"C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage 111 BVCEO(sus) Vdc
(IC = 30 mAdc, IB = 0) 80 -
Collector-Emitter Sustaining Voltage f1l BVCER(sus) Vdc
(IC = 100 mAdc, RBE = 10 ohms) 100 -
Collector-Base Breakdown Voltage BV CBO Vdc
(IC = 100 pAdc, r.:
= 0) 120 -
(IE = 100 /lAdc, IC = 0) 7.0 -
(V CB = 90 Vde, IE = 0) - .010 #lAde
(V CB = 90 Vde, IE = 0, TA = 150°C) - IS #lAde
Emitter Cutoff Current lEBO .,Aae

(V BE = 5.0Vdc, Ic =0) - .010
ON CHARACTERISTICS
DC Current Gain hFE
.
(IC = O. I mAde, VCE = 10 Vde) 20 -
(IC = 10 mAde, V CE = 10 Vdc)* 35 -
(IC = 10 mAdc, VCE = 10 Vdc, T A = _55°C) 20 -
(IC = 150 mAdc, V CE = 10 Vdc)* 40 120
Collector-Emitter Saturation Voltage 111 VCE(sat) Vdc

(IC = 50 mAdc, IB = 5. 0 mAdc) - 1.2
(IC = 150 mAdc, IB = 15 mAde) - 5.0
Base-Emitter Saturation Voltage til V BE (sat) Vdc

(IC = 50 mAdc, IB = 5.0 mAdc) - 0.9
(IC = 150 mAde, IB = 15 mAde) - 1.3
Current~Gairi-Bandwidth Product IT MHz
(IC = 50 mAdc, V CE = 10 Vde, I = 20 MHz) 50 -
(VCB = 10 Vde, IE = 0, 1= 100 kHz) - 15
Input Capacitance C 1b pF
(V BE = 0.5 Vde, IC = 0, I = 100 kHz) - 85
Input Impedance h ib Ohms

(IC = 1.0 mAde, V CB =5.0Vde, 1= 1.0 kHz) 20 30
(IC = 5.0 mAde, V CB = 10 Vde, I = 1. 0 kHz) 4.0 8.0

(IC = 1. 0 mAde, V CB = 5.0 Vdc, I = 1. 0 kHz) - 1. 25
(IC = 5.0 mAd.e, VCB = 10 Vde, I = 1. 0 kHz) - L 50
Small-Signal Current Gain hie -

(I C = 1. 0 mAdc, VCE = 5.0 Vde, I = 1. 0 kHz) 30 100
(IC = 1. 0 mAdc, VCE = 10 Vde, I = 1. 0 kHz) 45 -
Output Admittance hob /lmhos
(IC = 1. 0 mAde, VCB = 5.0 Vde, I = 1. 0 kHz) - 0.5
(IC = 5.0 mAde, VCB = 10 Vde, I = 1. 0 kHz) - 0.5
(11 Pulse Test: Pulse Width ~ 300 JlS, Duty Cycle ~ 2.0%.
2-82
2N 121 (SILICON)
PNP silicon annular transistor for high-frequency

general-purpose amplifier applications.
CASE 22
(TO.18)
MAXIMUM RAilNGS

Emitter - Base Voltage VEB 5.0 Vdc
Total Device Dissipation @ T A=25°C PD 0.40 Watts

(Derate above 25 DC) 2.67 mW!OC
Total Device Dissipation @ TC ",25°C PD 1.5 Watts

T =100°C 0.75
C
(Derate above 25°C) 10 mW/oC
Operating & Stbrage Junction T JI T stg -65 to +200 DC

Temperature Range
2-83
2N721 (continued)
ELECTRICAL CHARACTERISTICS cr. = 25'C ...... _ .. _

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage" BVCEO(sus>* Vde
(Ic= 100 mAdc, IB = 0) 35 -
Collector-Emitter Sustaining Voltage" BVCER(suS)* Vde
(IC = 100 mAde, RaE :; 100 ohms) 50 -
Collector-Base Breakdown Voltage BVCBO Vde
(Ic = 100 /lAde, ~ = 0) 50 -
Collector Cutoff Current ICBO "Ade
(VCB = 30 Vde, ~ = 0) - 1.0
(V CB =30Vde, ~ =0, TA = 150· C) - 100
Emitter Cutoff Current lEBO "Ade

(VBE = 2. 0 Vde, IC = 0) - 100
ON CHARACTERISTICS
DC Current GaIn. hFE •
(IC = 150 mAde, VCE = 10 Vde) 20 45 -
(IC = 5. 0 mAde, ,VCE = 10 Vde) 15 -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(IC = 150 mAde, Ia = 15 mAde) - 1.5
Base-Emitter Saturation Voltage VBE(sst>. Vde

(IC = 150 mAde, IB = 15 mAde) - 1.3

(IC = 50 mAde,. VCE'= 10 Vde, f = 20 MHz) 50 -
(VCB =10 Vde, ~ = 0, f = 100 kHz) - 45
Input Capacitance Clb pF

(V BE = O. 5 Vde, IC = 0) - 100
Input Impedance hlb ohms

(IC =.1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz) 25 35
(IC = 5. 0 mAde, VCB =10 Vde, f = 1. 0 kHz) - 10
. Voltage Feedback Ratio

~b
(IC = 1. 0 mAde,' VCB = 5.0 Vde, f =1.0 kHz) - 8.0 Xl0- 4
(IC = 5.0 mAde, VCB = 10 Vde, f = 1.0 kHz) - 8.0
Small Signal Current Gain lire

(Ie = 1.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz) 15 50
(IC '= 5. o,mAde, VCE = 10 Vde, f = 1.0 kHz) 20 -
Output Admittance hob "mhos
(IC = 1. 0 mAde, VCB = 5.0 Vde, f = 1.0 kHz) - 1.0
(IC = 5.0 mAde, VCB = 10 Vde,.f = 1.0 kHz) - 5.0
• Pulse Test: Pulse Width = 300 "s; Duty Cycle = 1.0%

2N722 (SILICON)
(2N1132 JAN AVAILABLE)
2Nl132
2Nl132A
2N2303
PNPSILICON
SWITCHING
TRANSISTORS
J
CASE 22
PNP SILICON ANNULAR TRANSISTORS (TO-IS)
2N722
... designed for medium-current switching and amplifier applications.

2N1132
2N1132A
2N2303
MAXIMUM RATINGS
Rating Symbol 2N722 2N1132 2N1132A 2N2303 Unit

Collector-Emitter Voltage VCEO 35 35 40 35 Vdc

(RBE • 10 Ohms) 50 50 50 50
Emitter-Base Voltage V EB 5.0 5.0 5.0 5.0 Vdc
Collector Current IC - - 600 500 mAde 0.200
T~~~a~:~~v~;:j~atlon @TA = 25°C PD 400

2.67
600
4.0
600
4.0
600
4.0
mW
mW/"C
Total Device Dissipation@Tc=2SoC PD 1.5 2.0 2.0 2.0 Watts
Derate above 25° C 10 13.3 13.3 13.3 mWiC
Operating Junction Temperature TJ -65 to +175 'c
Range
Storage Temperature Range .Tstg -65 to +300 ·c
TO·' OUTLINE
(Collector internally connected to case)
11 :,[0 hr
0.195 01.
om
~
W11
0.210
O.016 DIA nn
--t.500
MIN
0.019 U u-1.
0.100
BAS(
- -
L..JfU'-"'-COLLECTOR
"" TO·18 OUTLINE

0.048
(Collector internally connected to case)
2-85
2N722, 2N1132, 2N1132A, 2N2303(continued)
ELECTRICAL CHARACTERISTICS (T" = 2S·C unless otherwise noted)
I. Characteristic: Symbol Min 1 Max 1 Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage'CU BVCEO Vde
--
(IC .. 100 mAde; IB " 0) 2N722, 2N1l32, 2N2303 3~
2N1l32A 40
Collector-Emitter B1'eakdown Voltage (11 BVCER Vde
(IC .. 100 mAde, RBE S 10 Ohms) 50 -
Collector-Base Breakdo\Vn Voltage BVCBO Vde
(XC" 100 ItAd~, IE .. 0) 2N722, 2N1l32, 2N230S 50 -
2N1l32A 60 -
(IE " 100 It~e, IC .. 0) 2N722, 2NU32, 2N2303 5.0 -
(IE .. 1. 0 mAde, Ic " 0) 2N1132A 5.0 -
Collector Cutoff Current I CBO ItAdc
(VCB " 30 Vde, IE" 0) 2N722, 2NU32, 2N2303 · 1.0
(V CB ,,30 Vde, IE" 0, T A" lS0·C) 2N722, 2NU32, 2N2303 - 100
(VCB .. 50 Vde, IE .. 0) 2N1l32A
· 0.5
(V CB .. 50 VdC, IE" 0, T A" 150·C) 2N1l32A - 50
Emitter Cutoff Current lEBO ItAde

(V BE .. 5. 0 Vde, IC = 0) 2NU32A - 100
(VBE =2.0Vdc, IC =0) 2N2303 - 100
ON CHARACTERISTICS
J)C Current GaIn
(IC .. 5.0 mAde, V CE .. 10 Vde) 2N722, 2N1l32, 2N1l32A
hFE
25 -- -
2N2303 75
(Ic " 160 mAde, VCE .. 10 Vde) 2N722 , 2N1132, 2N1l32A 30 90
2N2S0S 75 200
Collector-Emitter Saturatioll Voltage Vde
(IC .. 150 mAde, IB .. 15 mAde)
VCE(sat)
- 1.5
Base-Emitter Saturation Voltage Vde

VBE(sat)
(IC .. 150 mAde, IB .. 15 mAde)
· 1.3
Current-GaIn-Bandwidth Product MHz
(IC .. 50 mAde, VCE .. 10 Vde, f .. 20 MHZ)
fT
60 .
Output CapaCitance pF
COb
(V CD " 10 Vde, IE "0, f .. 100 kIU) 2N722, 2N1l32, 2N2303 - 45
(VCD = 10 Vdc, ~ .. 0, r .. 1.0 MHz) 2N1132A - 30
(V BE .. O. 5 Vile, IC .. 0, f .. 100 kHz) - 80
Input Resistance h lb Ohms

(IC = 1.0 mAde, VclI .. 5.0 Vde, f .. 1.0 kHz) 25 35
(IC .. 5.0 mAde, VCD .. 10 Vde, f .. 1.0 kHz) - 10
Voltage Feedback Ratio h rb X 10.4

(IC " 1.0 Ade, VCE .. 6.0 Vdc, f " 1.0 kHz) - 8.0
(Ie" 5.0 mAde, VCE .. 10 Vde, f .. 1.0 k1U) - 8.0
Stnall.8igDat Current Gain

(IC .. 1.0 mAde, VCE .. 5.0 Vde, f " 1. 0 kHz) 2N722 , 2NU32
hre
25 100
-
2N1l32A 25 75
2N2303 75 SOO
(IC " 5.0 mAde, 'V CE .. 5.0 Vde, f .. 1. 0 kHz) 2N722, 2N1l32. 2N1l32A 30 .
2N230S 75 -
Output Admittance Itmhos
hob
(IC .. 1.0 mAde, VCE .. 5. 0 Vde, f .. 1.0 kHZ) - 1.0
(IC .. 6.0 mAde, V CE .. 10 Vde, f .. 1.0 kIU) - 5.0
(11 Pul" Test: Pulee Width '" 300 its, Duty Cycle ~ 2.0%.
2--:86
2N726 (SILICON)
2N727
PNPSILICON
PNP SILICON ANNULAR TRANSISTORS AMPLIFIER
TRANSISTORS
· .. designed for general purpose audio amplifier applications.
• Co"ector·Emitter Breakdown Voltage -

BVCEO =20 Vdc (Min) @ IC = 10 mAdc
!
• Low Output Capacitance -
Cob = 5.0 pI' (Max) @ VCB = 5.0 Vdc
·MAXIMUM RATINGS
Rating Symbol Valua Unit
Coliector·Emitter Voltage VCEO 20 Vde
Coliector·Sase Voltage VCS 25 Vde
I t:mitter·Sase Voltage VES !l.U Vde
Collector CUrrent Continuous Ie 50 mAde
Total Device Dissipation@TA = 25u C Po 300 mW
Derate above 25°C 2.0 mW/oe
Total Device Dissipation@Te=250C Po 1.0 Watt
Derate !!bove 25°C 6.67 mW/oC
Operating and Storage Junction TJ.Tstg -65 to +200 °e
Temperature Range
·Indicates JEDEC Registered Data

Pin 1. EMlttet 0.100
2. a...
3. ColI.ctar

eASE 22 (1)
(TO'IS)
2-87
*ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)

Characteristic I Symbol I Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltagel11 BVCEO 20 - Vde
(lc = 10 mAde,lB = 0)
Collector Cutoff Current ICEO - 5.0 /lAde
(VCE = 15 Vde,IB = 0)
Collector Cutoff Current ICBO /lAde
(VCB = 25 Vde, IE = 0) - 1.0
(VCB = 25 Vde, IE =0, TA = 150o C) - 25
Emitter Cutoff Current lEBO - 0.5 /lAde
(VEB = 5.0 Vde, IC = 0)
ON CHARACTERISTICS
OC Current Gain(l) hFE -
(lC = 10mAde, VCE = 1.0 Vde) 2N726 15 45
2N727 30 120
(lC = 10 mAde, VCE =1.0 Vde, 2N726 6.0 -
TA = -55 0 C) 2N727 12 -
Collector-Emitter Saturation Voltage VCE(sat) - 0.6 Vde
(lC = 10 mAde,lB = 1.0 mAde)
Base-Emitter Saturation Voltage VBE(sat) - 1.0 Vde
(lC = 10 mAde,lB = 1.0 mAde)
Current-Gain-Bandwidth Produet(2) fT 140 - MHz
/lC= 10 mAde, VCE = 10 Vde, f= 100MHz)
Output Capacitance Cob - 5.0 pF
(VCB = 5.0 Vde, IE = 0, f= 1.0 MHz)
(lc=10mAde, VCE=10Vde, 2N726 15 90
f = 1.0 kHz) 2N727 30 240
* Indicates JEOEC Registered Data.

(1)Pulse Test: Pulse Width = 300 #ls, Duty Cycle< 2.0%.
(2)fT is defined as the frequency at which Jhfel e~rapolates to unity.
2-88
2N731 (SILICON)
NPN silicon transistor designed primarily for medium-

'Power audio-frequency applications in industrial service,
MAXIMUM RATINGS

(RBE "'~ 10 ohms)
CASE 22
(TO·18) Collector-Base Voltage VCB 60 Vdc
Collector electrically Emitter-Base Voltage VEB 5.0 Vdc

connected to case
Collector Current - Continuous IC 1.0 Adc
Total Device Dissipation @TA '" 25° C PD 0.5 Watt

Total Device Dissipation @T C = 25° C PD 1.5 Watts
Derate above 25° C 10 mW;oC
Operating Junction Temperature TJ +175 °c
Storage Temperature Range Tstg -65 to +200 ·C
ELECTRICAL CHARACTERISTICS (1. = 2S'C unless otherwise noted)

Characteristic Symbol .Min I. Max Unit
OFF CHARACTERISTICS
Collector· Emitter Breakdown Voltage 111 BV CER Vdc
(IC =100 mAde, ~E = 10 ohms) 40 -
(IC =100 /LAde, ~ =0) 60 -
Emltter·Base Breakdown Voltage BVEBO Vdc
(~ =100 /LAde, IC =0) 5.0 -
Collector Cutoff Current ICBO /LAde
(V CB =30 Vdc, ~ = 0) - 1.0
(V CB =30 Vdc, ~ =0, TA =150·C) - 100
ON CHARACTERISTICS
DC Current Gain t1I hFE -
(IC =150 mAde, VCE =10 Vdc) 40 120
Collector-Emitter Saturation Voltage (11 Vdc

(IC =150 mAde, IB =15 mAde)
VCE(sat) . 1.5
Base·Emltter Saturation Voltage 111 VBE(sat) Vde

(IC =150 mAde, ~ =15 mAde) - 1.3
(IC = 50 mAde, VCE =10 Vde, f =20 MHz) 25 -
(V CB =10 Vdc, ~ =0, f =1. 0 MHz) - 35
Input CapaCitance Clb pF

(V BE =O. 5 Vdc, IC = 0, f = 1.0 MHz) - 80
I1I:Pulse Test: Pulse Width = 300 /Ls, Duty Cycle = 2.0%.
2-89
2N735 (SILICON)
2N736
2N739
2N740

cations.
CASE 22
(TO·18)
MAXIMUM RATINGS
2N735 2N73g
Collector-E':mitter Voltage V CEO 60 80 Vdc
Collector Current IC 1.0 Adc
Total Device Dissipation @ TA = 25°C PD 500 mW

Operating and Storage Junction T J' T stg -65 to +200 °c
Temperature Range
Lead Temperature, 1/16" ± 1/32" froIn case for 10 s.
2-90
2N735, 2N736, 2N739, 2N740 (Continued)
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage' III BVCEO Vde
(IC = 10 mAde, IB = 0) 2N735, 2N736
2N739, 2N740
60
80
--
(IC = 10 !lAde, IE = 0) 2N735, 2N736 80 -
2N739, 2N740 125 -
(IE = 10 !lAde, IC = 0) 5.0 -
Collector Cutoff Current I CBO !lAde
(VCB = 40 Vde, IE = 0) - 1.0
Emitter Cutoff Current lEBO !lAde

(VBE = 5.0 Vde, IC = 0) - 10
ON CHARACTERISTICS
DC Cur rent Gain hFE -
(IC = 5.0 mAde, VCE = 5.0 Vde) 2N735, 2N739 30 100
2N736, 2N740 60 200
VCE(sat)
(IC = 10 mAde, IB = 2.0 mAde) - 1.0

(IC = 10 mAde, IB = 2.0 mAde) 0.35 1.5
OUtput Capacitance Cob pF
(VCB = 5.0 Vde, IE = 0, f = 1.0 MHz) - 10
Input Impedance Ohm

(IC = 5.0 mAde, VCE = 5.0 We, f = 1.0 kHz) 2N735, 2N739
h.
1e . 1500
2N736, 2N740 - 1800
(IC = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 Hz) 2N735, 2N739 40 100
2N736, 2N740 80 200
(I) Pulse Test: Pulse Width ~ 300 ~s, Duty Cycle ~ 2.0%.
2-91
2N7 41, A (GERMANIUM)
PNP germanium mesa transistors for oscillator,

frequency multiplier and amplifier applications.
CASE 22
(TO-IS)
Collactor connectad to elsa
MAXIMUM RATINGS
Collector-Emitter Voltage VCE 15 20 Vdc

Derate above 25°C 2.0 mw;oC
Total Device Dissipation @ TC =' 25°C Po 300 mW


Temperature Range TJ,T stg -65 to +100 °c
POWER OUTPUT versus FREQUENCY, POWER GAIN AND COMMON EMITTER CURRENT GAIN
CLASS C AMPLIFIER versus FREQUENCY
500 28
II,
LIMITED DUTY CYCLE
II
400
300
---- - -- . .
NOTE: DC power input
is 800 to 1000 Milliwatts
~
24
20 "'I"" ~OWER
~
AIN
I
~ 16
,
,, ~ 1 ~
200 - HIGH ReliABILITY MAX z .12 Vel = -6Vde
i'-..\
;j
8.0
I, - 5 mAde ~
100
! '\:
~ 4.0
o
10 20 30 40 50 60 80 100 200 300 o
I~
I Z.o 4.0 6.0 10 20 40 60 100 200 400 1000
FREQUENCY (MH'i
FREQUENCY ( MH'i
2-92
2N741,A (continued)
ELECTRICAL CHARACTER ISTICS (TA = 250 C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
~ = 100 "Adc, IE =0) 2N741 15 - -
2N741A 20 - -
Emitter-Base Breakdown Voltage BVEBO Vde
OE =100 ,.Adc, IC =0) 1.0 - -
Collector Cutoff Current ICES "Ade
(VCE = 15 Vdc, VBE = 0) 2N741 - - 100
(VCE =20 Vde, VBE = 0) 2N741A - - 100
Collector Cutoff Current ICBO /.LAde

(V CB == 6 Vdc, IE = 0) - 0.2 3.0
ON CHARACTERISTICS
IDC Current Gain

(IC =5 mAde, VCE =6 Vde) 10 25
(IE =5 mAde, VCB = 6 Vde, f = 100 MHz) 2N741
2N741A
-
300
360
360 --
(VCB =6 Vde, IE = 0, f = 100 kHz) - 6.0 10
Collector Capacitance Ce pF
(VCB =6 Vde, IE = 0, f =100 kHz) - 3.0 -
(IC = 5 mAde, VCE =6 Vdc, f = 1 kHz) 20 - -
Output Admittance hob "mhos
(IE =5 mAde, VCB " 6 Vdc, f =1 kHz) - 45 -
Input Impedance hib Ohms
(IE =5 mAde, VCB =6 Vde, f =1 kHz) - 8.0 15
Base Resistance r'b Ohms

(IE = 5 mAde, VCB =6 Vde, f = 300 MHz) 2N741 -- 75 -
2N741A 65 -
Noise Figure NF dB
(IE =5 mAde, VCB = 6 Vdc, f =30 MHz) - 7.0 -
Power Gain, Matched, Neutralized Gpe dB
(VCB = 6 Vdc, IE =5 mAde, f = 30 MHz) 16 22 -
Power Output Pout mW
~ = 60 mAde, VCB = 6 Vdc, - 200 -
Gpe= B dB, f = 30 MHz) - 250 -
Power Output Pout mW
(IC = 60 mAde, VCB = 6 Vde, - 200 -
Gpe= 5 dB, f = 70 MHz)
2-93
2N743 (SILICON)
NPN silicon annular transistor designed for high-

speed, low-current, saturated switching operations.
CASE 22
(TO-IS)
MAXIMUM RATINGS
Collector Current - Continuous IC 200 mAdc
Total Device Dissipation @TA = 25° C PD 300 mW

Operating and Storage Junction TJ , T -65 to +200 °c
stg
Temperature Range
SWITCHING TEST CIRCUITS
FIGURE 1 - TURN-ON AND TURN-OFF FIGURE 2 - CHARGE-STORAGE TIME

TIME TEST CIRCUIT TEST CIRCUIT
INPUT PULSES
.:i-
10 V
ONi
VI
91
TURN-OFF: so
~
-q ~
0.1
tL F
RS
TO SCOPE
tr~1.0ns O. 1 ~F SOO
0.1
TO SCOPE
~F t r '1.0ns
Z. = 50
Vin=-10~
tr ~ 1. 0 ns In
Pulse Width :;:: 300 ns <I--'-\O-'IIVV-+-1f-{

. Zin :: son
~ 1.0~: rs
500
Duty Cycle. 2.0% 6
tr
Pulse Width :;:: 300 ns IIV
Duty Cycle <t" 2. 0%
IRcurr CONDrrlONS
(VOLTS)
t to!! (OHMS)
on
Condition VI I VSIl V2 J VSS VCC RI R2 R3 R4 RS
1 IS I -3.0 . -151 +12 3.0 3.3 k SO 220 -
2 20 -4. S ·20 +15.3* 6.0 330 56 - 1.0k
• VSS is pulsed for 1. 5 s at less than 10% Duty Cycle to maintain T C < 30· C.
2-94
2N743 (continued)
!ELECTRICAL CHARACTERISTICS (T, = 25'C unle.. oth.rw;s. nbted)

OFF CHARACTERISTICS
Collector-Emitter Sreakdown Voltage SV CEO Vde
(IC = 10 mAde, ~ = 0) 12 -
Collector-Cutoff Current ICES /lAde
(V CE = 20 Vde, VSE = 0) - 1.0
(V CE =20Vde, VSE =0, TA =l70'C) - 100
Collector Cutoff Current I CEX /lAde

(V CE = 10 Vde, VES(off) = O. 35 Vde, T A = 100' C) - 30

(V CS = 20 Vde, ~ = 0) - 1.0

(V SE " 5.0 Vde, IC = 0) - 10
ON CHARACTERISTICS
DC Current Gain hFE
(IC = 1. 0 mAde, VCE = O. 25 Vde) 10 -
(IC = 10 mAde, VCE = 0.35 Vdc) 20 60
(IC = 10 mAde, VCE = 0.35 Vde, T A = _55' C) 10 -
(IC = 100 mAde, VCE = 1. 0 Vde) 10 -
VCE(Sat)
(IC = 10 mAde, Is =1..0 mAde, TA =170' C) - 0.35
(IC =100 mAde, Is =10 mAde, T A = 170·C) - 1.0
(Ic = 10 mAde, IS = 1. 0 mAde, T A = _55' C) - 1.1
Sase-Emitter Saturation Voltage Vde

VSE(sat)
(IC =10 mAde, Is =1. 0 mAde) 0.65 0.85
(IC = 10 mAde, IS = 1. 0 mAde, TA = -55' C) - 1.1
(IC =100 mAde, Is =10 mAde) - 1.5
(IC = 100 mAde, IB = 10 mAde, T A = _55' C) - 1.6
Current-Gain-Bandwidth Product iT MHz
(IC = 10 mAde, VCE =10 Vde, f = 100 MHz) 282 -
(V CS = 5.0 Vde, IE = 0, f = 1.0 MHz) - 5.0
Turn-On Time ton ns

(V CC = 3.0 Vde, VSE(off) = 1. 5 Vde, IC = 10 mAde,
lSI = 3.0 mAde, Condition 1) - 16
(V cC = 6.0 Vde, VBE(off) = 2.4 Vde, IC = 100 mAde,
lSI =40 mAde, Figure I, Condition 2) - 12
Turn-Off Time toff ns

(V CC = 3.0 Vde, IC = 10 mAde, lBl " 3.0 mAde,
IB2 = 1. 5 mAde, Condition 1) . 24
(V CC " 6, 0 Vdc, IC = 100 mAde, IBI =40 mAde,
IS2 = 20 mAde, Figure I, Condition 2) - 40
Storage Time ts ns
(Ic " 10 mAde, IBI "IS2 = 10 mAde, VCC = 10 Vde,
Figure 2) - 14
2-95
2N744 (SILICON)
NPN silicon annular transistor for high-speed switch-

ing applications.
CASE 22
(TO-18)
MAXIMUM RATINGS
Collector-Emitter Voltage. VCEO 12* Vdc
Collector DC Current IC 200 mAdc

25 °C Case Temperature PD 1.0 Watt
(Derate 6.67 mW/"C above 25·C)

25°C Ambient Temperature PD 0.3 Watt
Junction Temperature TJ +200 ·C
Storage Temperature Tl:Itg -65 to -+200 ·C
"Refers to the 'voltage at which the'magnitude of hFE a:pproaches one when the
emitter-base diode is open-circuited.
SWITCHING TIME TEST CIRCUIT CHARGE STORAGE TEST CIRCUIT
MODEL 303 LUMATRON

PULSE GENERATOR
OR EQUIVALENT
MODEL 12·AB
LUMATRON'
OSCILLOSCOPE
OR EQUIVALENT
1K
400 10 Vde
(Adjust for R3
IC = 10 mAde) (HFR)
IC = +10 mAde
IBI = +10 mAde
IB2= _to mAde
2N744 (continued)
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise notedl

Collector Cutoff Current leES /lAdc
(V CE = 20 Vdc, IE = 0) •
(V CE = 20 Vdc, IB = 0, TA = 170 C)
-- .005
-
1.0
100
Collector Cutoff Current IeEX /lAdc
(VCE = 10 Vdc, VBE = 0.35 Vde, TA = 100'C) - - 30
(VEB = 5 Vde, Ie = 0) - - 10
(Ie = 10 mAde, IB = 0)· 12 30 -
Forward Current Transfer Ratio
(Ie = 1.0 mAde, VCE = 0.25 Vde)
hFE
20 - - -
(Ie = 10 mAde, VCE = 0,35 Vde) 40 - 120
(Ie = 10 mAde, VCE = O. 3li Vde, TA = -55'C)
(IC= 100 mAde, VCE = 1. 0 Vde)·
20
20
-- -
-
(Ie = 10 mAde, VCE = 10 Vde, f = 100 MHz)
hfe
2.8 4.5 - -
(Ie = 10 mAde, IB = 1 mAde) 0.7 -- 0.85
(Ie = 10 mAde, IB = 1 mAde, TA = -55"C)
(IC = 100 mAde, IB = 10 mAde)·
-- -
1.1
1.5
(Ie' = 100 mAde, IB = 10 mAde, TA =, -55'C) 111 - - 1.6
Colleetor-·Emitter Saturation Voltage VCE(sat) Vdc
(Ie = 10 mAde, IB = 1 mAd~, TA = 170'C)
(Ie = 100 mAde, III = 10 mAde, TA = 170'C) 111
-- -- 0.35
1.0
(VCB = 5 Vde, IE = 0) - 3.0 5.0
Turn-on Time ton nil
(Condition 1)
(Condition 2)
-- 26
10
-
16
(Condition 3)
(Condition 4)
-- 7.0
6.0
-
12
Turn-off Time ns
(Condition I)
(Condition 2)
toff
-- 30
17
-
24
-
(Condition 3)
(Condition 4)
-- 18
23 45
Charge Storage Time Constant TS ns
(Ie = 10 mAde, IBI = -IB2 = 10 mAde) - - 18
111 Pulse Test· Pulse width "- 300 /lS . duty cycle"- 2%
ton toff
~l ~1
CONDITION IC VCC Rl = R2 R3 R4 R5 VBB VIN VBB VIN
rnA VBJ<lgffl Vdc Q Q Q Q V V V V
1 3 I -0,5 -0.9 3.4 6.8 K 50 1K 0 -1. 8 10.2 8.4 -10.2

2 10 3 -1.5 -1. 5 3.0 3.3 K 50 220 0 -3.0 15.0 12,0 -150
3 50 15 -7.5 -1. 8 4.0 680 50 18 lK -3.5 15.3 *11.7 -15,3
4 100 40 -20.0 -2.4 6,0 330 56 0 lK -4,5 20.0 *15.3 -20.0
-V BB is pulsed for 1. 5 s fclIless than 10'{, duty cycle
2N753 (SILICON)

2-97
2N827 (GERMANIUM)
PNP germanium mesa transistor for high-speed

switching applica.tions.
CASE 22
(TO.18)
MAXIMUM RATINGS
ColleCtor.. Sase Voltage VCS ~O Vdc

Colleet()t .. Emitter Voltage VCi:S 20 Vde
Colle¢tor.. 1!:mitter Voltage VCEX 10 Vdc
Etnitter-Base VOltage VES 4.0 Vdc
Collector Current (Contifiuou8) rc 100 mAde
Junction Temperature TJ +100 °0
Oetlce D18s1patibh @ 250C Po 150 mW
Aatlbierit Temperature . 2.0 mW/oC
(berate 2tnW/OC above 25()C)
Ie. = -IOmAdc
I" = -l.3ri\Adc
Vee'" -3V I .. '" -3.lmAdc
GtNERAtOR t .., '" 50!l
INPUT PULSE t, ::: I, "" 1 ns
215 !l
INPUT PULSE WIMH '" 100 ns swITCH IN. TIME TEST CIRCUIT
(50% OUTY CYCLE) SCOPE
1.2K!l Z,N"'" 1 Mego
e lN ~ 20·p:r
t, "" 1 ns
2-98
2N827 (continued)

(IC =100 MAdc, IE =0) 20 22 ---
(IC= 100 tlAdc, VEB=O) 20 22 ---
Emitter-Base Breakdown Voltage BV EBO Ydc
(IE= 100 tlAdc, Ie= 0) 4 5.0 ---
Collector Latch-up Voltage LV CEX 10 --- ....... Ydc
Collector-Emitter Cutoff Current ICES MAde

(VCE =15 Vdc, VEB =0) --- 0.5 5.0
collector-Base Cutoff Current ICBO tlAdc
(VCB =15 Vdc) .-- 0.5 5.0
DC Forward Current Transfer Ratio hFE ---
(IC = 10 mAdc, VCE = 0.3 Vdc) 100 150 ---
Collector-Emitter Saturation Voltage VCE(sat) Ydc
(Ie = 10 mAde, IB =3.3 mAdc) --- 0.16 0.25
Base-Emitter Voltage VEE Vdc

(Ie = 10 mAdc, IB =3.3 mAdc) --- 0.39 0.5

(IC =10 mA, VCE'" 1 V, f= 100 MHz)
hCe
2.5 3.5 ---
---
Collector Output Capacitance Cob pF
(VCB=10 V, IE=O, f=l MHz) .. -- 4.0 9.0
Delay Time td --- 10 15 ns

Rlse Time tr --- 10 20 nS
Storage Time ts --- 15 30 ns

Fall Time tf --- 15 30 ns
2-99
2N828 (GERMANIUM)
PNP germanium epitaxial mesa transistor for high-

CASE 22
(TO·1S)
Collector
connected to cas.
MAXIMUM RATINGS

Collector-Current IC 200 mAdc
Total Device Dissipation @ T A =25°C PD 150 mW
Derate above 25°C 2.0 mWjOC
Total Device Dissipation @ TC =25°C PD 300 mW

o .
Derate above 25 C 4.0 mW;oC
Temperature Range TJ , Tstg -65 to +100 °c
FIGURE 1 - SWITCHING TIME TEST CIRCUIT

TYPE RSAMPLING RESISTOR
INPUT WAVEFORM 2800 200
PULSE VOLTS
+,m '--1----r-
~5.4V
INTERNAL RESISTANCE
2000 UK
NOTE,
1•• ==_lmA
I., == +0.25mA
_3Ydc (APPROX)
(ADJUST FOR Ie == _IOmA)
I" == -IOmA
USE TEKTRON IX TYPE R PLUG·IN
FIGURE 2 - CHARGE STORAGE TIME TEST CIRCUIT

TYPE R SAMPLING RESISTOR
:F--
PULSE VOLTS 9800 2011
INTERNAL RESISTANCE
500 3500 -IOVdc (APPROX)
NOTE, (ADJUST FOR Ie :::: 10mA)
I... == _0.10mA
-4.4Y 1..,= +IOmA
INPUT WAVEFORM Ie :::: -IOmA
2-100
2N828 (continued)
FIGURE 3 - RISE TIME FACTOR

HEWLETT PACKARD
MODEl 185 SAMPLING
OSCILLOSCOPE
SKL MODEL 503
PULSE GENERATOR 3K HFR
125rJ
HFR
Sill
HFR
INPUT WAVEFORM
_3.0Vdc
FIGURE 4 - STORAGE AND FALL TIME TEST CIRCUIT HEWLETT-PACKARD

MODEL 185 SAMPLING
OSC ILLOSCOPE
OBSERVE
+1.05V
rTrt!
SCOPE TRIGGER INPUT HERE O.Ql)lF
O~
125rJ
,..m..."". T ~ 1: :
,j.
3K
HFR O.OOI"F
HFR
-7.5Vdc -3.0Vdc
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Cha racteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Volt~ BVCEO Vde
(Ie = 1 mAde, = 0) Ia - 10 -
Collector-Emitter Breakdown Voltage BVCES Vde
(IC = 100 /LAde, VBE = 0) 15 25 -
Collector-Base Breakdown Voltage BV CBO Vde
(IC = 100/LAde, IE = 0) 15 25 -
(~ = 100 /LAde, IC = 0) 2.5 - -
Collector Cutoff Current /LAde
leBO
(V CB = 6 Vde, ~ = 0) - 0.4 3.0
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAde, VCE = 0.3 Vde)
hFE
25 40 -
-
Colleetor- Emitter Saturation Voltage (VCE(sat) Vde
(IC = 10 mAde, IB = 1 mAde) - 0.12 0.2
(IC = 50 mAde, Ia = 5 mAde) - 0.18 0.25
Base-Emitter Saturation Voltage VBE(sat) Vde

(IC = 10 mAde, IB = 1 mAde) 0.34 0.39 0.44
2-101
2N828 (continued)
Characteristic Symbol Min Typ Max I Unit I

DYNAMIC.CHAI!ACTERISTICS
Current-Gain ....,. Bandwldth Product fT MHz
(IC = 10 mAde, VCE = 1 Vile, f = 100 MHz) 300 400 -
(VCB = 10 Vde, ~ = 0) - 3.5 -
(IC = 10 mAde, VCE = 1 Vde, f = 100 MHz) hfe
3 4.0 - -
Delay Plus Rise Time (Figure 1) td + tr - 50 70 ns
Storage Time (Figure 1) ts - 33 50 ns
Fall Time (Figure 1) tf - 35 50 ns
Charge Storage Time Constant (Figure 2)
TS - 14 25 ns
Rise Time (FiguI'e.3) tr - 7.0 - ns
Storage Time (Figure 4) ts - 5.0 - ns
Fall Time (Figure 4) tf - 3.0 - ns
2N828A (GERMANIUM)
2N829
C~l~\
PNP germanium epitaxial mesa transistors for high-
speed switching applications
MAXIMUM RATINGS

Collector to Base Voltage Vce 15 Vdc
Collector to Emitter Voltage VCES 15 Vdc
Emitter to Base Voltage VEB 2.5 Vdc
Collector Current (ContinUous) IC 200 mAdc
Total Device Dissipation at 25"C case PD 300 mW
Temperature (Derate 4. Omw;oC above 25·C)
Total Device Dissipation at 25"C . PD 150 mW
Ambient Temperature (Derate 2. Omw/·C)

,
Storage Temperature T stg -65 to +100 ·C
2-102
2N 8 28A, 2N 8 29 (continued)
ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted I

Collector to Base Breakdown Voltage BV CBO 15 25 -- Vdc
~ = 0, IC = 100~Adc
Collector to Emitter Breakdown BVCES 15 25 -- Vdc

Voltage
VEB = 0, Ie = lOO~Adc
Emitter to Base Breakdown Voltage BVEBO 2.5 -- -- Vdc

IC = 0, ~ = 100pAdc
Collector Cutoff Current ICBO -- 0.4 3.0 pAdc

~ = 0, VCB = 6Vdc
Forward Current Transfer Ratio hFE -- --

IC = lOmAdc, VCE = o.3Vdc 2N828A 25 40
2N829 50 80
Forward Current Transfer Ratio hfe -- --

IC = l50mAdc, VCE = lVdc 2N828A 25 40
2N829 50 80
Collector Saturation Voltage VCE(sat) -- Vdc

IC = lOmAdc, IB = 1.0 mAde 2N828A 0.11 0.20
IC = lOmAdc, IB = 0.5mAdc 2N829 0.11 0.20
Collector Saturation Voltage VCE(sat) -- -- 0.25 Vdc

IC = 50mAdc, Ia = 5.0mAdc
Collector Saturation Voltage VCE(sat) -- Vdc

IC = 150mAdc, Ia = l5mAdc 2N828A 0.35 0.50
IC = 150mAdc, Ia = 7.5mAdc 2N829 0.38 0.50
Base to Emitter Voltage VBE Vdc

IC = lOmAdc, Ia = lmAdc 2N828A 0.34 0.40 0.44
IC = lOmAdc, Ia = 0.5mAdc 2N829 0;30 0.38 0.44
Base to Emitter Voltage VBE -- Vdc

IC = l50mAdc, Ia = l5mAdc 2N828A 0.70 0.85
IC = l50mAdc, IB = 7.5mAdc 2N829 0.65 0.85
Collector Capacitance Cob -- 2.2 4.0 pF
~ = 0, VCB = 6Vdc, f = 100 kHz)
2-103
2N828A, 2N829(continued)
Input Capacitance Cib
-- 2.2 3. 5 pF
V BE = IVdc, ~ = 0, f = 100 kHz)
Small Signal Forward Current hfe 3.0 4.0 -- --

Transfer Ratio
IC " 10mAdc, VCE " -I Vdc, f" 100MHz
Current Gain Bandwidth Product fT :ioo 400 -- MHz
VCE = IVdc, IC = -10mAdc, f = 100MHz
Delay Plus Rise Time (Fig. I) td+tr -- 35 50 ns

IC" lOmAdc
storage Time (Fig. 1) ts - - 30 50 ns

IC" 10mAdc
Fall Time (Fig. 1) tf -- 30 50 ns

IC " 10mAdc
Total Control Charge (Fig. 3) QT -- 50 80 pC
IC = 10mAdc
Delay Plus Rise Time (Fig. 2) td+tr -- 25 50 ns

IC : 150mAdc
Turn Off Time (Fig. 2) toff -- 60 100 ns

IC = 150mAdc
Total Control Charge (Fig. 4) QT -- 120 175 pC

IC = 150mAdc
FIGURE 1 - 10mA SWITCHING TIME FIGURE 2 -150mA SWITCHING TIME

TEST CIRCUIT TEST CIRCUIT
SAMPLING SAMPLING
RESISTOR RESISTOR
PULSE 2S0 20 PULSE 4S 2
VOLTS .-Jo1N'_~M,..-O -3.1Vdc VOLTS r-'W~~M..-O -7.75 Vdc
INPUT INTERNAL INTERNAL
INPUT
SIGNAL RESISTANCE RESISTANCE L -_ _OSCOPE Vout
'--_ _OSCOPE Vout SIGNAL
+1.25 Vdc
::1--r.
O--O-~W-;:
-5.4 VDC
200 4. SK Ie = -10mAdc
IB1 = -lmAdc
IB2 • +0. 25mAdc
0- u-
+1. 9 Vde
-S.2 Vde
100 900
C>-'V\I\,.-JVIII...-{
Ie = -l50mAde
IB1 = -7. 5mAde
IB2 = +1. 9mAdc
VBE(O) = +1. 9Vdc
VBE (0) = +1. 25Vdc
SCOPE INPUT IMPEDANCE. 1Megohm SCOPE INPUT IMPEDANCE = 1Megohm
SCOPE INPUT CAPACITANCE = 20'pF SCOPE INPUT CAPACITANCE = 20 pF
GENERATOR OUTPUT IMPEDANCE = 50 ohms GENERATOR OUTPUT IMPEDANCE = 50 ohms
INPUT PULSE tr • t f = 2ns INPUT PULSE tr = t f = 2ns
FIGURE 3 - 10mA TOTAL CONTROL FIGURE 4 - 150mA TOTAL CONTROL

CHARGE TEST CIRCUIT CHARGE TEST CIRCUIT
'ADJUST VBB FOR -5.4 VOLT PULSE AT POINT A 'ADJUST VBB FOR -S VOLT PULSE AT POINT A
300 50
r-'VV.......D-3 . 1V de r-VV"v-O-7. 75 Vde
VBB' Ie = -150mAde
100 A IC' -10mAdc VBB' 100 A IS = -7.5mAde
U IB = -lmAdc
u
-5.4 Vdc
AT POINT A 100
j
-
-
HgRELAY
~
10%- __
r I
~
-90%
20mV
MAX
-S Vdc
AT POINT A 100
f~ '=
HgRELAY
10%--
~
-90%
r
_L
20mV
MAX
10ns MAX ...: :.. f 10ns MAX..l1. r

2-104
2N834 (SILICON)
2N835
NPN silicon epitaxial transistors for high- speed
CASE 22 \
(TO·18)
MAXIMUM RATINGS
Collector-Emitter Voltage VCES 30 20 Vdc

Collector Current-Continuous Peak 200 mAdc

Ie
Total Device DisSipation @ T A = 25°C PD 0.3 Watt
Derate above 25°C 2.0 mwflC
Total Device Dissipation @ T C = 25°C PD 1.0 Watt
Total Device Dissipation @ T C = 100°C PD 0.5 Watt

Derate above 100°C 6.67 mWflC
Operating and Storage Junction TJ,Tstg -65 to +175 °c
Temperature Range
FIGURE 1 - TURN·ON AND TURN·OFF FIGURE 2 - CHARGE STORAGE TIME

TIME MEASUREMENT CIRCUIT CONSTANT MEASUREMENT CIRCUIT
+10Vde
'50
82. ,< 0.11&'

_ ,.........I\IIr..e--;-'VV~1-O
'Oo . ...
'_.
50 ...
·+l1Y
t. n ,Y.. =+18Vdc V,.=-19Vdr:
.'---r=:t
NOTE. ALL SWlreHINa TIMES MWUR£l) WITH LI/IIATfION MOOU 420 SWlreHINC TIME TEST SET OR EQUIVALENT.
ELECTRICAL CHARACTERISTICS (TA'i= 25°C unless otherwise noted)
Characteristic I· Symbol Min 1 . Max Unit

OFF CHARACTERISTICS
(IC = 10 j.l.Adc, ~ = 0) 2N834
2N835
40
25
--
(~= 10 j.l.Adc, IC = 0) 2N834 5.0 -
2N835 3.0 -
Collector Cutoff Current j.l.Adc
leES
(VCE = 30 Vdc, VBE = 0) 2N834 - 10
(VCE = 20 Vdc, VBE = 0) 2N835 - 10
Collector Cutoff Current j.l.Adc
leBO
(VCB = 20 Vdc, ~ = 0) - 0.5
(VCB = 20 Vdc, ~ = 0, TA = IS0oC) - 30
ON CHARACTERISTICS
DC Current Gain 111 hFE -
(Ie = 10 mAdc, VCE = 1 Vdc) 2N834
2N835
25
20.
--
Collector-Emitter Saturation Voltage (V CE(sat) Vdc
(IC = 10 mAdc, IB = 1 mAdc) 2N834 - 0.25
111
2N835 - 0.30
(IC = 50 mAdc, IB = 5 mAdc) 2N834 - 0.4
III
2N835 - -
(IC = 10 mAdc, IB = 1 mAdc) - 0.9
Current~Gain - Bandwidth Product fT' MHz
(IC = 10 mAde,VCE = 20 Vde, f = 100 MHz) 2N834 350 -
(IC = 10 mAde, VCE = 15 Vde, f = 100 MHz) 2N835 300 -
High-Frequency Current Gain
Ihfel -
(IC = 10 mAde, VCE = 20 Vde, f = 100 MHz) 2N834 3.5
(IC = 10 mAde, VCE = 15 Vde, f = 100 MHz) 2N835 3.0 -

(VCB = 10 Vde, ~ = 0, f = 100 kHz) - 4.0
Charge-Storage Time Constant (Figure 2) ts ns
(IC = 10 mAde, IBI = Ia2 = 10 mAde) 2N834 - 25
2N835 - 35
Turn-On Time (Figure 1) ton ns
(IC = 10 mAde, IBI = 3 mAde, IB2 = 1 mAde) 2N834 - 33
2N835 - 20
Turn-Off Time (Figure 1) toft ns
(IC = 10 mAde, IB1 = 3 mAde, Ia2 = 1 mAde) 2N834 - 75
2N835 - 35
111
Pulse Test: Pulse Width S 12 ms, Duty Cycle S 2%
2.-106
2N838 (GERMANIUM)

"
CASE 22
(TO·18)
Collector connected to CBse
MAXIMUM RATINGS

Collector-Base Voltage . VCB 30 Vdc
Collector-Emitter Voltage VCEX 15 Vdc
Emitter-Base Boltage VEB 2.5 Vdc
Collector Current (Continuous) Ie 100 mAdc
Junction Temperature TJ +100 °c

Storage Temperature Tstg -65 to+ 100 °c
Device Dissipation @ T A = 250 C PD 1.50 mW
(Derate 2mW/oC above 25 0 C) 2.0 mW/OC
FIGURE 1 - SWITCHING TIME TEST CIRCUIT FIGURE 2 - AREA OF PERMISSIBLE LOAD LOCI
Ie. = -IDmAdc
= -3V
1'1 = -3.3mAdc
=
GENERATOR Z... 50!! Vee
I" = +3.3mAdc
-=
INPUT PULSE t, = t. 1 ns 80
INPUT PULSE WIDTH = 100 ns 275 !! ~
(5q% DUTY CYCLE) .s
~
SCOPE
liN:=:: 1 Megn ~
'"
~
'-'
CIN :::;; 20 pF
'"
~
t.::::: 1 ns
is
'-'
VlEI01 = +4Vdc ~
VeE' COLLECTOR·EMITTER VOLTAGE (VOLTS)
2-107
2N838 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise notedl

(Ic =100 fJ.Adc, IE =0) 30 35 ---
(IC=100 J1Adc, VEB=O) 30 35 ---
(IE = 100 fJ. Adc, IC = 0) 2.5 4.5 ---
Collector Latch-up Voltage LVCEX Vdc
(see Figure 2) 15 --- ---
Collector-Emitter Cutoff Current ICES fJ. Adc
(V CE =15 Vdc, VEB =0) --- l.0 10
Collector-Base Cutoff Current leBO fJ.Adc
(VCB=15V, IE = 0) --- l.0 10
(IC=10mAdc, VCE =0.3Vdc) 30 70 ---
Collector-Emitter Saturation Voltage VCE(sat) Vdc
(Ic =10 mAdc, IB =3.3 mAdc) --- 0.1 0.18
(Ie = 10 mAdc, IB = 3.3 mAdc) --- 0.39 0.5
(IC=10 rnA, VCE=IV, f=100 MHz)
hfe
3.0 4.5 ---
---
(VCB=10 V, IE=O, f=1 MHz) --- 2.0 4.0
Delay Time (Figure 1) td --- 10 15 ns
Rise Time (Figure 1) tr --- 7.0 15 ns
Storage Time (Figure 1) ts --- 10 20 ns
Fall Time (Figure 1) tr --- 10 20 ns
2-108
2N840 (SILICON)
2N841

cations.
CASE 22
(TO·18)
MAXIMUM RATINGS


Temperature Range
2-109
2N840, 2N841 (Continued)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV CEO Vdc
(IC = 10 mAdc, IB = 0) 45 -
(IC = 100 !lAdc, IE = 0) 45 -
(IE = 100 !lAdc, IC = 0) 2.0 -
Collector Cutoff Current ICER !lAdc
(V CE = 45 Vdc, VBE = 0, RBE = 5.0 k ohms) - 20
Collector Cutoff Current I CBO !lAdc

(V CB = 45 Vdc, IE = 0) - 1.0
(VCB = 45 Vdc, IE = 0, T A = 150"C) - 50
Emitter Cutoff Current lEBO !lAdc

(V BE = 2.0 Vdc, IC = 0) - 50
ON CHARACTERISTICS
(Ie = 10 mAdc, VeE = 5.0 Vdc) 2N840 30 100
2N841 60 400
(IC" 10 mAdc, IB = 2.2 mAdc) - 2.0
SMALL·SIGNALCHARACTERISTICS
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz) 2N840 1.5 -
2N841 2.0 -
(VCB = 5.0 Vdc, IE = 0, f = 1. 0 MHz) - 15

(IC = 1. 0 mAdc, VCE = 5.0 Vdc, f = 1. 0 kHz) 2N840 40 90
2N841 80 330
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz, 2N840 15 -
T A = -55 "C)
2N841 25 -
Output Admittance hoe fllUhos
(Ie = 1. 0 mAde, VCE = 5.0 Vdc, f =1. 0 kHz) - 1.2
Input Resistance hib Ohms

(IC = 1. 0 mAdc, VCB = 5.0 Vdc, f = 1. 0 kHz) - 80
Output Conductance hob fllUhos

(IC = 1.0 mAdc, VCB = 5.0 Vdc, 1 = 1.0 kHZ) - 1.2
Real Part 01 Input Impedance Re(hie ) Ohms

(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) - 500
2-110
2N869 (SILICON)
2N995
CASE 22
(TO· IS)

PNP silicon annular transistors for high-frequency
general-purpose amplifier applications.
MAXIMUM RATINGS
Rating Symbol Types Value Unit

Base Voltage VCB 2N869 25 Vdc
2N995 20
Collector- Emitter Voltage VCEO 2N869 18 Vdc
2N995 15
Emitter-Base Voltage VEB 2N869 5.0 Vdc

2N995 4.0
Total Device Dissipation Po Both
at 25°C Case Temperature Types 1.2 Watts
at 100°C Case Temperature 0.68 Watt
Total Device DisSipation Po Both

at 25°C Ambient Temperature Types 0.36 Watt
Storage Temperature Tstg Both -65 to +200 °c
Types
Junction Temperature TJ Both +200 °c

Types
2-111
ELECTRICAL CHARACTERISTICS ITA =25°C unless otherwise noted)

(Ic = 10 /lAdc, IE = 0) 2N869
2N995
25
20
--- ---
--- ---
Collector-Emitter SUstaining Voltage III VCEO(sust) Vdc
(Ic = 10 mAdc, IB '" 0) 2N869 18 --- ---
2N995 15 --- ---
Emitter-Base Breakdown Voltage BV EBO
(IE = 10 /l Adc, IC = 0) 2N869 5.0 ---
--- ---
Vdc
2N995 4.0 ---
Collector Cutoff Current ICBO /l Adc
(VCB = 15 Vdc, IE = 0) 2N869
2N995
---
--- ---
---
010
005
(VCB = 15 Vdc, IE = 0, T A = 150°C) Both Types --- --- 25
Emitter Current lEBO /lAdc

(VEB = 4.0 Vdc, Ie = 0) 2N995 . --- --- 10
Collector Saturation Voltage VCE (sat) Vdc

(Ie = 10 mAdc, IB = 1.0 mAdc) 2N869 --- 0.17 1.0
(IC = 20 mAdc, IB = 2.0 mAde) 2N995 --- --- 0.2
Base Saturation Voltage . VBE (sat) Vdc

(Ie = 10 mAdc, IB =1.0 mAdc)
(Ic = 20 mAdc, IB =2.0 mAdc)
2N869
2N995
--- 0.78
--- ---
1.0
0.95
DC Forward-Current Transfer Ratio

(I<::: = 10 mAdc, VCE = 5.0 Vdc)
(1)
2N869
hFE
20 --- 120
---
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N995 25 --- ---
(Ie = 20 mAdc, VCE = 1.0 Vdc)
(Ic = 50 mAdc, VCE = 1.0 Vdc)
2N995
2N995
35
25
--- 140
--- ---
Open-Circuit Output Capacitance Cob pF
(VCB = 10 V, IE = 0) 2N869 --- 3.0 9
2N995 -. - 3.0 10
Open-Circuit Input Capacitance Cib pF

(VSE = 0.5 V, Ie = 0) Both Types --- 7.0 11
Small-Signal Forward-Current
Transfer Ratio bee ---
( IC = 10 mA, VCE = 15 V, f = 100 MHz) 2N869
(Ic = 10 mA, VCE = 10 V, f = 100 MHz) 2N995
1.0
l.0
3.0
3.0
---
---
(1) Pulse Note: Pulse Width = 300 II s, Duty Cycle = 1%
2-112
2N869A(SILICON)
2N869A JAN/JANTX Available
MM869B
PNP SILICON
PNP SILICON ANNULAR TRANSISTORS SWITCHING
TRANSISTORS
PNP silicon annular low-power transistor designed for medium-

speed, saturated switching applications.
• Collector-Emitter Breakdown Voltage -

BVCEO =30 Vdc (Min) @ IC = 10 mAdc - MM869B
VCE(sat) = 0.2 Vdc (Max) @ IC = 30 mAde
• Turn-On Time -
ton = 10 ns (Typ) @IC =30 mAdc - MM869B
*MAXIMUM RATINGS
Rating Symbol 2N869A MM869B Unit
Collector Current IC 200 mAde
Total Device Dissipation @ T C = 25°C Po 1.2 Watt.
0.Z09
1 1f.iliir
L
OIA
&m OlAl
Operating and Storage Junction TJ, Tstg -65 to +200 °c
Temperature Range
l 1$°
ij
·2N869A JEOEC Registered Data.

0.500
-2.0 V ~OIA
Pulse Source
Ir< 1.0ns 100
f'W > 200 ns Pin 1. Emitter
Zin = 50 n. t----oVOUI
2. Base 0.100
3.Coilector
0.1 "F
TO SAMPLING SCOPE
Zin'" 100 kn.
VinT 2.0 k tr< 1.0ns 0.028
II:ImI
100
CASE 22 (11
(TO·1SI
2-113
2N~69A,MM869B (continued)
"IU.!iCTRICAL. CtfARACTERISTICS (TA = 25°C unle$S otherwise not\ld)
rOFF::'':: :':
CtiARACTERISTICS
Symbol Min Typ Max Unit
qpII~~tlir'li1mitt.r SU$t.ln'ing Voltage(1 I VCEO(susl Vde

lie" 10 mAd~. IB '''0) 2N869A 18 - -
MM869B 30 - -
Oollll\:tor·Emitte. 6reakdown Voltage BVCES Vde
(10" 10 "Ade. VBS "0) 2NB69A 25 - -
CQlllil:tor;llase S.ea~down Voltage , BVCBO Vde
--
(Ie ~10 "Ade. Ie .. 01 2N869A 25 -
MMB69B 30
, Smitt~r-Il_ Brea~down Voltage BVEBO 5.0 - - Vde
II"" 10uAdQ.IC" Q)
q\lll~~tor Cutoff Current ICES - .010 "Adc
IVCE" 1p Vd., VBe .. 0)
CQlle~tor Clltott Cu rrent ICBO 25 "Ad.
(Vea "1~ Vde. IE .. D. TA" 150( 0)
lIall!l Cutr,"! IB .010 "Ad.
(Vee" 1Ii Vd., VBE "01
ON CHARACTIlRISTICS
PC'Ollrrim! Gain(11 hFE 111 -
(Ie" 10 mAd~. VeE" 0.3 Vdcl
(10" 10 mAde, VOE .. 5.0 Vdel
30
40 -
- -
120
(I C = 30 mAde. V Cf;: .. 0.5 Vdcl 40 - 120
110" 30 mAde. VOE .. 0,5 We, TA "-550 CI 17 - -
IIc = 100 mAde, VCE " 1.0 Vdel 25 - -
. Colleclor-em ~er Saturation VOltage VeE (sat! Vdc
(10" 10 mAde, 16 .. 1.0 mAde) - - 0.15
(I C .. 30 rnAdQ, I B .. 3,e;! mAde) - - 0.2
(Ie" 100 mAde, 18" lQ mAde) - - 0.5
, Sase·Emi!t,. Saturation Voltage VBE(satl Vde
(lc" 10 mAde, Ie" 1.0 mAde) 0.78 - 0.98
(lc" 30 mAde, la" 3.0 mAdel 0.85 - 1.2
(lc .. 100 mAd~, IS .. 10 mAdc) - - 1.7
IlMALL,sIGNAL CHARACTIlRISTICS
Current.Galn-eandwldth Proquei(21 fy 400 - - MH~
lie ~ 10 mAde. VCE ~ 15 Vde, t ~ 100 MHz)
output C;IIP,clte"ee Cob - 6.0 pF
(Vca .. 5.0 VdG. IE ~ 0, f ~ 140 kHz)
InpL!t"CapliCitance Gib - - 6.0 pF
(Vefi ~ 0.5 Vd~, Ie ~ o. f .. 140 kH~1
"WmlI-lING CHARACTERISTICS
Turn;OnTlme ns
He ~ 30 mAde; IBl .. 1.5 mAde) Both Type. ton - - 50
IIC" 30 mAdc, le1 .. 3.0 mAde) MM829B - 10 - ns
Turn-Off Time ns
(lC" 30 mAde,lBl "le2" 1.5 mAde) Both Types toff - - 80
lie::" 31/ mAde.IB1" IB;I"3.0 mAde) MM829B - 60 - ns
~~1II8!1AA ~epec Registered Pata.

111PUIM! Te.t, Pul .. Width" <300 "s, Duty C;yola < 1.0~.
1:llfT i~ Refined as the frotquenoy at which Ihfalaxt,apolates to unity.
2-114
2N910 (SILICON)
2N911

cations.
CASE 22
(TO-18)
Collector connected to cIse
MAXIMUM RATINGS
Collector-Emitter Voltage VCER eo Vdc
Total Device DisSipation @ T A ;;: 25°C PD O. !5 Watt

Derate above 2!5°C 2,86 mW/PC
Total Device Dissipation @ T C ::;: 25°C PD 1.8 Watt
TC ;: 10QoC 0.975
Temperature Range
2-115
ELECTRICAL CHARACTERISTICS (T. =2S'C unless otherwise noted)
Characteristic Symbol Min Max Uriit ~j
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage' , Vde
BVCEO(sus)
(IC = 30 mAde, IB = 0) 60 -
Collector-Emitter Sustaining Voltage'
, Vde
BVCER(sus)
(IC = 100 mAde, RBE ~ 10 ohms) 80 -
(IC = 100 pAde, ~ = 0) 100 -
Emitter-Base Breakdown Voltage BV EBO , Vde
(~ = 100 pAde, IC = 0), 7.0 -
(VCB = 75 Vde, IE = 0) - 25 nAde
(VCB = 75 Vde, IE = 0, ,T A = 150"C) - 15 pAde
Emitter Cutoff Current lEBO nAde

(VBE = 5.0 Vde, IC = 0) - 25
ON CHARACTERISTICS
(IC = O. I mAde, VCE = 10 Vde) 2N9IO 35 -
2N911 20 -
(IC = 10 mAde, VCE = 10 Vde) 2N910* 75 -
2N9U* 35 -
(IC = 10 mAde, VCE = 10 Vde, TA = -55"C) 2N910* 30 -
2N911* 15 -
(IC = 10 mAde, IB = 1. 0 mAde) - 0.4
(IC = 50 mAde, IB = 5.0 mAde) - 1.2

(IC = 10 mAde, IB = 1. 0 mAde) 0.,6 0.8
(IC = 50 mAde, IB = 5.0 mAde), - 0.9
Current-Gain-Bandwldth Product fT MHz
2N911 50 -
(VCB = 10 Vde, IE = 0, f = 100 kHz) - 15
(V BE = 0.5 Vde, IC = 0, f = 100 kHz) - 85
Input Impedance hie Ohms

(IC = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz) 2N9IO - 1800
2N911 - 1000
(IC = 1.0 mAde, VCE = 5.0Vdc, f = 1.0 kHz) 2N910
hfe
76 200
-
2N911 36 90
(Ic = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz) 2N911 40 100
Output Admittance hoe jUIlhos

(IC = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz) 2N910 - 100
2N911 - 50
In~t Resistance hib Ohms
(Ie = 1..0 mAde, VCB = 5.0 Vde, f = 1. 0 kHz) 20 30
(IC = 5.0 mAde, VCB = 5; OVde, f = 1. 0 kHz) 4.0 8.0
Voltage Feedback Ratio hrb X 10-4

(IC = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz) 2N910 - 3'.0
2N911 - 1. 25
(IC = 5.0 mAde, VCB = 5.0 Vde, f = 1. 0 kHz) 2N911 - 1. 75
Output Conductance hob jUIlho

(IC = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz). - 0.5
(IC = 5.0 mAde, VCB = 5.0 Vdc, f = 1. 0 kHz) - 1.0
Noise Figure NF dB
(IC = O. 3 mAde, VCB = 10 Vde, RG = 510 ohms, 2N9IO - 12
f = 1. 0 kHz, B. W. = 200 Hz)
2N911 - 15
, Pulse Test: Pulse Width ~ 300 j./S, Duty Cycle = 2.0%.
2-116
2N914 (SILICON)
2N914 JAN. JTX Available
CASE 22
(TO·1S)
Collector connected
to case
NPN silicon annular transistor for high-speed switch-
ing applications.
MAXIMUM RATINGS
*Collector-Emitter Voltage VCEO 15 Vdc
*Collector-Emitter Voltage VCER Vdc

(RBE !> 10 ohms) 20

*Emitter-Base Voltage VEB 5.0 Vdc
Collector Cu rrent (Note 1) IC 150 mAdc
*Total Device Dissipation @ T A = 25°C PD 360 rnW

Derate above 25 0 C
2.06 mW/oC
*Total Device Dissipation @ T C = 25°C PD 1.2 Watts

Derate above 25°C
6.9 mW/oC
* Total Device Dissipation @ T C = 100°C PD 0.68 Watt
*Operating Junction Temperature Range TJ 200 °c

*Storage Temperature Range Tstg -65 to +200 °c
Note 1: Limited by Power Dissipation
CHARGE STORAGE TIME CONSTANT TEST CIRCUIT t... and loft TEST CIRCUIT
+5V
OV - , r +5V
-9V U
INPUT PULSE 240 INPUT PULSE 23
Rise Time:=::: 1 ns Rise Time :-:::: 1 ns
500 Source Impedance 500 Source Impedance
O.l/Lr 215 O.ll'f 200
T- T
OUTPUTTO OUTPUT TO
SAMPLING OSCILLOSCOPE SAMPLING OSCILLOSCOPE
Rise Time ~ 1 ns Rise Time ~ 1 ns
100 500 Input Impedance 200 50n ,Input Impedance
PW ~200ns p W ~ 200 ns
=
+7V -4V
2-117
2N914 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Cha racteristic Symbol Min Max Unit
OFF CHARACTERISTICS
*Collector-Emitter Sustaining Voltage (Note 1) BVCEO(sus) Vdc
(IC = 30 mAdc, IB = 0) 15 -
*Collector-Emitter Sustaining Voltage (Note 1) BVCER(sus) Vdc
(IC = 30 mAdc, RBE $ 10 ohms) 20 -
*Collector-Base Breakdown Voltage BV CBO Vdc
(Ic;: 1. 0 /lAdc, IE '" 0) 40 -
*Emitter-Base Breakdown Voltage BV EBO Vdc
(IE;: lO/lAde, IC = 0) 5.0 -
*Collector Cutoff Current I CEX /lAde
(V CE = 20 Vdc, VEB(off) '" 0.25 Vde, l'A ;: 125°C) - 10
"Collector Cutoff Current I CBO /lAde
(V CB = 20 Vde, IE = 0) - 0.025
(V CB = 20 Vde, IE '" 0, T A = 150°C) - 15
Emitter Cutoff Current /lAde

lEBO
(V BE =4.0Vde,I C =0) - 0.1
ON CHARACTERISTICS
DC current Gain (Note 1)
hFE -
*(IC = 10 mAde, VCE = 1. 0 Vde) 30 120
(IC = 10 mAde, VCE = 1. 0 Vde, T A = -55°C) 12 -
*(I c = 500 mAde, VCE = 5.0 Vde) 10 -
Collector-Emitter Saturation Voltage (Note 1) Vde
VCE(sat)
*(I c '" 200 mAde, IB = 20 mAde) - 0.70
(IC '" 10mAdc,IB = 1. 0 thru 20 mAde, T A = -55 to +125 0 C) - 0.25
"'Base-Emitter Saturation Voltage Vde
(I C ;: 10 mAde, IB = 1. 0 mAde) VBE(sat)
0.70 0.80
tCurrent-Gain - Bandwidth Product fT MHz

(IC ;: 20 mAde, VCE ;: 10 Vde, f = 100 MHz) 300 -
Output Capacitance pF
(V CB =10 Vde, IE '" 0, f = 1.0 MHz)
Cob
. 6.0
Input Capacitance Cib pF
(V BE = 0.5 Vde, IC;: 0, f = 1.0 MHz) - 9.0
"Charge Storage Time Constant (Note 2) ns
7"5
(Ie;: IBI ;: IB2 ;: 20 mAde) - 20
Turn-On Time (Note 2) t ns
on
(Ic '" 200 mAde, IBI " 40 mAde, IB2 .. 20 mAde) - 40
Tu,n-Off Time (Note 2) ns
toff
(IC ;: 200 mAde, IBI ;: 40 mAde, IB2 = 20 mAde) - 40
Note 1: Pulse Test: Pulse Width'" 300 Jl.S, Duty Cycle';; 1.0%.
Note 2: Measu,ed on Sampling Scope: Pulse Width;;' 200 ns.
"Indicates JEDEC Registered Data..
t JEDEC Registration Defined as hre.
2-118
2N915 (SILICON)
NPN silicon annular tran~istor for high-frequency

CASE 22 amplifier, oscillator and switching applications.
(TO-18)
Collector connected to c••e
MAXIMUM RATINGS

Total Device Dissipation PD

@ l!5°C Case Temperature 1.2 W
Dllrating Factor Above 25°C 6.9 mW;oC
@ 25°C Ambient Temperature 0.36 W
Derating Factor Above 25°C 2.06 mW;oC
Junction Temperature, TJ +200 °c

Operating
Storage Temperature Range Tstg -65 to + 200 °c
2-119
2N915 (continued)
ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted)

Collector Cutoff Current ICBO 10 nA
IE ;. 0 VCB : 60V
Collector Cutoff Current @ 150·C ICBO 30 Il A

IE : 0 VCB : 60V
Collector Breakdown Voltage BVCBO 70 Volts

IC : 100 Il A IE : 0
Collector to Emitter Sustaining Voltage 111 VCEO 50 Volts

IC = 10mA IB : 0
Emitter Breakdown Voltage BV EBO 5.0 Volts

IC : 0 IE : 100 Il A
Base Saturation Voltage VBE(sat) 0.9 Volts

IC : lOrnA IB : 1.0mA
Collector Saturation Voltage VCE(sat) 1.0 Volts

IC : 10mA IB = 1.0mA
DC Pulse Current Gain hFE 50 200

IC = 10mA VCE = 5.0V
Output Capacitance COb 3.5 pF

IE = 0 VCB • 10V
Emitter Transition Capacitance CTE 10 pF

IC = 0 VEB = O.5V
High Frequency Current Gain f : 100MHz hfe 2.5

IC : 10mA VCE = 15V
Small Signal Current Gain f ;: 1 kHz hfe 40 200

Ie : 1.0mA VCE = 5.0V
" .
Ie = 5.0IpA VCE = 5.0V 50 250
Input Resistance f : 1 kHz h; 6000 ohms

Ie
IC = 1. OrnA VCE = 5.0V
IC = 5. OrnA VCE : 5.0V 2000 ohms
Output Conductance J = 1 kHz hoe 75 Ilmho

Ie = 1.0mA VCE = 5.0V
IC = 5.0mA VeE = 5.0V 125 Ilmho
111 Pulse Test: pw ~ 300 /lB, Duty Cycle ~ 1. G%
2-120
2N916 (SILICON)
2N916 JAN Available
CASE22
(TO·1S) ~
Collector NPN silicon annular transistor for high-frequency
connected to case amplifier, oscillator and switching applications.
MAXIMUM RATINGS
@ 25"C Case Temperature 1.2 W
Derating Factor Above 25·C 6.9 mW/"C
@ 25"C Ambient Temperature . 36 W
Derating Factor Above 25·C 2.06 mW/"C
Junction Temperature, Operating TJ +200 ·C
storage Temperature Range Tst1 -65 to +300 ·C
ELECTRICAL CHARACTERISTICS tT A ~ 25 0 C unless otherwise noted)

Collector Cutoff Current ICBO 10 nAdc
~ =0 VCB = 30V
Collector Cutoff Current @150· C ICBO 10 /lAde
IE = 0 VCB = 30V
Collector Bre~kdown Voltage BV CBO 45 Vdc
IC = lOj.LA IE = 0
Collector to Emitter Sustaining Voltage 111 VCEO 25 Vdc
IC = 30m A IB = 0
Emitter Breakdown Voltage BV EBO 5.0 Vdc
IC = 0 IE = 10 j.LA
Base Saturation Voltage 0.9 Vdc
VBE(sat)
Ie = lOrnA IB = LOrnA
Collector Saturation Voltage VCE(sat) 0.5 Vdc
IC = lOrnA IB = LOrnA
DC Pulse Current Gain 111 hFE 50 200
IC = lOrnA VCE =1.0V
Output Capacitance 6.0 pF
Cob
IE = 0 VCB = 5.0V
Emitter Transition Capacitance C TE 10 pF
IC = 0 VEB = 0.5V
High Frequency Current Gain ( = 100 MHz h(e 3.0
IC = lOrnA VCE = 15V
Small Signal Current Gain ( = 1 kHz h(e 40 200

IC = 1. OmA VCE = 5.0V
IC = 5.0mA VCE = 5.0V 50 250
Input Resistance ( = 1 kHz h. 6000 ohms
Ie
IC = 1. OmA VCE = 5.0V
IC = 5.0mA VCE = 5.0V 2000 ohms
Output Conductance ( = 1 kHz hoe 75 j.Lmho
IC = LOrnA VCE = 5.0V
IC = 5.0mA VCE = 5.0V 125 j.Lmho
111 Pulse Test: Pulse Width;:; 300 j.LS, Duty Cycle,~l.O%
2-121
2N918 (SILICON)
2N918JAN,JTXAVAILABLE
NPN SILICON
NPN SILICON ANNULAR TRANSISTORS AMPLIFIER
TRANSISTORS
· .. designed for lise in VHF and UHF amplifier, mixer and o:;cillator
applications.
• High Current-Gain - Bandwidth Product -

fT = 600 MHz (Min) @ f = 100 MHz
•
Low Output Capacitance -
Cob = 1.7 pF (Max) @ VCB = 10 Vdc
Coliector·Emitter Sustaining Voltage -

VCEO(sus) = 15 Vdc (Min) @ IC = 3.0 mAdc
I
h'
• JAN/JANTX Also Available ~:~ r-
01. I
0.1
!'Wo
*MAXIMUM RATINGS
Rating Svmbol Value Unit 0.016 D1A
1.'N 0.500
~
Collector-Emitter Voltage VCEO 15 Vdo o:m
Colleetor-Sase Voltage VCB 30 Vde
Emitter·Base Voltage VES 3.0 Vde
CQllector Current - Continuous IC 50 mAde 0.100
Total Device Dissipation @l T A = 250 C Po 200 mW

Derate ai>qve 250 C 1.14 mWf'C
Total Device Dis$ipation ~ TC::: 25°C Po 300 mW
!!,!!l§
Derate above 250 C 1.71 mW/oC 0.048
Operating and Storage Junction TJ, T stg -65 to +200 DC
CASE 20110)
Temperatur. Range
TO·72 PACKAGE
"'Indi~.t.s JEDEC Registered Oata To convert lriches to millimeters multiply by 25.4.
All JEDEC TO·72 dimensions and notes apply.
FIGURE 1 - NEUTRALIZED 200 MHz POWER AMPLIFIER GAIN FIGUR E 2 - 500 MHz OSCILLATOR TEST CIRCUIT
TEST CIRCUIT
FROM SOil
'f.( LI 'CI
L2'/
.L
']:J "
\I
'[1: ¥8i
:1~
1000.F
~ 1
0,01 ,.F
TO SOn
0.01 "F3DETECTOR -
I L2
LEAO 41C
FLOATING
500 MHz
RFC
1000
, j
100 200 MHz ~ 2.2k

3
":'
-VEE
1
CiRCUIT COMPONENT INFORMATION:
CI: 3.0-12pF
C2: 1.5-7.SpF
1.0kO.Il5,.F ."..~
L2: 0.4-0.65 pH Miller 14303 (or

equal)
+VCC
RFC ~ -VEE
CIRCUIT COM PONENT INFORMATION:
L1: 2turnl'16AWG. 318" OD,
11/4"length
L2: 9 turns 122 A
lIZ"llng1h
WG, 3/16" DO.
2 GR Tvpe 874TEE
1 GR Type 874-D20 Adjustable
1 Gs~u:ype 874-LA Adjusteble
line
D
Ll: 31l2turns#16AWG 5/16" L3: 8 turns 116 AWG 1f8"ID, Capacitance values are in pF. lGRType874-WN3Short.
ID, 1116" length, turnsrlltio 7/8" length, turnsratio-8 Double Stub Tune r consistl of the CircuitTerminetion
·2tol tol following cammer ciallyav.ilab~
·~xtefl'al inlirlead $hield tQ isolate collector IaiId from emitter and base feads. components. (or equivalents)
2-122
2N918 (continued)
*ELECTRICAL CHARACTERISTICS (TA ~ 25 0 C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage VCEO(sus) 15 - Vde
(lC ~ 3.0 mAde, IB ~ 0)
Collector· Base Breakdown Voltage BVCBO 30 - Vde
(lC ~ 1.0/LAde, IE ~ 0)
Emitter-Base Breakdown Voltage BVEBO 3.0 - Vde
(IE ~ 10/LAde, IC ~ 0)
(VCB ~ 15 Vde, IE ~ 0) - .Q10 /LAde
(VCB ~ 15 Vde, IE ~ 0, TA ~ 150o C) - 1.0 /LAde
ON CHARACTERISTICS
DC Current Gain hFE 20 - -
(lC ~ 3.0 mAde, VCE ~ 1.0 Vde)
COllector-Emitter Saturation Voltage VCE(sat) - 0.4 Vde
(lC~ 10 mAde, IB~ 1.0 mAde)
Bas~Emitter Saturation Voltage VBElsat) - 1.0 Vde
(lC ~ 10 mAde, IB ~ 1.0 mAde)
Current·Gain - Bandwidth Product I I)
(lC ~ 4.0 mAde, VCE ~ 10 Vde, f ~ 100 MHz)
. for 600 - MHz

(VCB ~ 10 Vde, IE ~ 0, f ~ 140 kHz) - 1.7
(VCB ~ 0, IE ~ 0, f ~ 140 kHz) - 3.0
I nput Capacitance Cib - 2.0 pF
(VEB ~ 0.5 Vde, IC ~ 0, f ~ 140 kHz)
Noise Figure NF - 6.0 dB
(lC ~ 1.0 mAde, VCE ~ 6.0 Vde, RG ~ 400 Ohms, f ~ 60 MHz)
FUNCTIONAL TEST
Amplifier Power Gain (Figure I) G pe 15 - dB
(VCB ~ 12 Vde, IC ~ 6.0 mAde, f ~ 200 MHz)
Power Output (F igure 2) Pout 30 - mW
(VCB ~ 15 Vde, Ie ~ 8.0 mAde, f ~ 500 MHz)
Collector Efficienev (Figure 2) ~ 25 - %
(VeB ~ 15 Vde, Ie ~ 8.0 mAde, f ~ 500 MHz)
*Indicates JEDE~ Registered Data.
(1)fT is defined as the frequency at which Ihfel extrapolates to unity.
2-123
2N929, A (SILICON)
2N930, A
2N929JAN AVAILABLE
2N930JAN AVAILABLE
NPN silicon annular transistors for low-level, low-

noise amplifier applications.
CASE 22
(TO·18)
Collector connected to C8se
MAXIMUM RATINGS
2N929 2N929A
Collector-Emitter Voltage VCEO 45 60 Vdc
Total Device Dissipation @ T A = 25°C PD 0.5 W

Total Device Dissipation @ TC = 25°C PD 1.8 Watt
Derate above 25°C 12 mW/oC
Operating Junction Temperature Range TJ -65to + 175 °c

stg
2-124
2N929, A, 2N930, A (continued)
ELECTRICAL CHARACTERISTICS (TA =2S'C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage 111 BV CEO Vde
(IC = 10 mAde, IB = 0) 45 -
(IC = 10 pAdc, IE = 0) 2N929A, 2N930A 60 -
(IE = 10 pAde, IC = 0) 2N929, 2N930 5.0 -
2N929A, 2N930A 6.0 -
Collector Cutoff Current ICEO nAde
(VCE = 5.0 Vde, IB = 0) - 2.0
Collector Cutoff Current ICES

(VCE = 45 Vdc, VBE = 0) 2N929, 2N930
2N929A, 2N930A
-- 10
2.0
nAde
(VCE = 45 Vde, VBE = 0, TA = 170'C) 2N929, 2N930 - 10 pAde

2N929A, 2N930A - 2.0
Collector Cutoff Current ICBO nAde
(VCB =45Vdc,IE =0) 2N929, 2N930 - 10
2N929A, 2N930A - 2.0
(VBE = 5.0 Vde, IC = 0) 2N929, 2N930 - 10
2N929A, 2N930A - 2.0
ON CHARACTERISTICS
(IC = 1. 0 pAde, VCE = 5.0 Vdc) 2N929A 25 -
2N930A 60 -
(IC = 10 pAde, VCE = 5.0 Vde) 2N929, 2N929A 40 120
2N930, 2N930A 100 300
(IC = 10 pAde, VCE = 5.0 Vde, T A = -55'C) 2N929 10 -
2N929A 15 -
2N930 20 -
2N930A 30 -
(IC = 500 pAdc, VCE = 5.0 Vde) 2N929, 2N929A
2N930, 2N930A
60
150
--
(IC = 10 mAde, VCE = 5.0 Vde) 111 2N929, 2N929A - 350
2N930, 2N930A - 600
Collector-Emitter Saturation Voltage Ill· Vdc
VCE(sat)
(IC = 10 mAde, IB = 0.5 mAde) 2N929, '2N930 - 1.0
2N929A, 2N930A - 0.5
Base-Emitter Saturation Voltage (11 Vdc
VBE(sat)
(IC = 10 mAde, IB = 0.5 mAde) 2N929, 2N930 0.6 1.0
2N929A, 2N930A
SMAll·SIGNAl CHARACTERISTICS
(IC = 500 pAdc, VCE = 5.0 Vde, f = 30 MHz)
2N929, 2N930 30 -
2N929A, 2N930A 45 -
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) 2N929, 2N930 . 8.0
2N929A, 2N930A - 6.0
Input Impedance hib ohms
(IE = 1.0 mAde, VCB = 5. 0 Vdc, f = 1.0 kHz) 25 32
Voltage Feedback Ratio hrb X 10-6

(IE = 1.0 mAde, VCB = 5.0 Vdc, f = 1. 0 kHz) - 600
Small· Signal Current Gain

hre -
(IC = 1. 0 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
2N929, 2N929A 60 350
2N930, 2N930A 150 600
Output Admittance hob IJIllho
(~ = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz) - 1.0
Noise Figure NF dB
(IC = 10 pAde, VCE = 5.0 Vde, 2N929, 2N929A - 4.0
RS = 10 k ohms, f = 10 Hz to 15.7 kHz) 2N930, 2N930A - 3.0
111 Pulse Test: Pulse Width;;; 300,..., Duty Cycle;;; 2.0%.
2-125
2N956 For Specifications, See 2N718A Data.
2N960 (GERMANIUM)
2N961
2N962
2N962JAN AVAILABLE
2N964
2N964JAN AVAILA.BLE
2N965
2N966

CASE 22
(TO·18)
MAXIMUM RATINGS
Characteristic Symbol 2N960 2N961 2N962 Unit

2N964 2N96S 2N966
Collector-Emitter Voltage VCE Vdc
15 12 12
Collector-Base Voltage VCB Vdc

15 12 12
Emitter-Base Voltage VEB Vdc

2.5 2.0 1. 25
Total Device Dissipation @ T A = 25°C PD 150 mW

Total Device Dissipation @ T C = 25°C PD 300 mW

Operating and storage Junction TJ.Tstg °c

Temperature Range -65 to + 100
NORMALIZED DC CURRENT TRANSFER RATIO CURRENT GAIN·BANDWIDTH PRODUCT (fT)

Yersus COLLECTOR CURRENT versus COLLECTOR CURRENT
--
500
~ 2.0 " , I I
III r-!.CI
ffi ::= 1 Vdc
--
1.5 +85"C
~ 1.2
~
¥ V .......... t"-
5 0.8
1.0 +25°C
~V r--. ......
~
u
0.6
,.-
,.-
TA = -55°C
/" "' ~
Vel = 0.5.Vdc
~ 0.4
~ V VeE = 1 Vdc T" = 25°C
~ 0.3 I I I
'"~ 0.2
. / '"
.J·D.IS '"
1 5 10 20 50 100 10 20 50 100
Ie. COLLECTOR CURRENT (mAde)
Ie. COllECTOR CURRENT (mAde)
2-126
2N960 SERIES (continued)
COLLECTOR·EMITTER SATURATION VOLTAGE
STORAGE TIME versus CIRCUIT RATIO versus AMBIENT TEMPERATURE
~
~
40 ~ 0,4
2N964, 2N965, 2N966
----
til ~2N960, 2N961, 2N962
~
----
S!
Ie: 1,=10 -, ,,"" ~
~
-- - :,.:::. ::-
0,3
- -1;: ~ ~oomAde
100 mAde
50 mAde ~
i;;:
ffi
50 mAde ....t:,;:.
T~
Ie -IOmAde
0.2
:: -~ ~mAde
r--II' :::::4112
R, = 1000
R,= I KO
i
~
o
~
O. I - - -- 0
"""'- .::::",
-1-
I
-
8 Ie 12mAt - r--
o 10 20 ! 0
5 15
,} -75 -50 -25 0 +25 -:-50 +75 +100
Ie II,,, CIRCUIT CURRENT RATIO
TAO AMBIENT TEMPERATURE 1°C)

(IC = 100 /.LAde, = 0) l:E 2N960,2N964 15 25 -
2N961,2N962,2N965,2N966 12 20 -
(l:E
= 100 /.LAde, IC = 0) 2N960, 2N964 2.5 - -
2N961,2N965 2.0 -- -
2N962,2N966 1. 25 -
Collector-Latch-up Voltage LVCEX Vde
VCC = 11.5 Vde 11.5 - -
Collector-Emitter Cutoff Current ICES /.LAde

(VCE = 15 Vde) 2N960,2N964 - - 100
(V CE = 12 Vde) 2N961,2N962,2N965,2N966 - - 100
Collector-Base Cutoff Current ICBO /.LAde

(VCB = 6 Vde, = 0) l:E - 0.4 3.0

(IC = 10 mAde, VCE = 0.3 Vde) 2N960,2N961,2N962 20 40 -
2N964,2N965,2N966 40 70 -
(IC = 50 mAde, VCE = 1 Vde) 2N960, 2N961, 2N962 20 55 -
2N964,2N965,2N966 40 90 -
(IC = 100 mAde, VCE = 1 Vde) 2N960, 2N961, 2N962 20 50 -
2N9~4,2N965,2N966 40 85 -
(IC = 10 mAde, IB = 1 mAde) 2N964,2N965,2N966 -
.
0.11 0.18
2N960,2N961,2N962 0.13 0.20
(IC = 50 mAde, IB = 5 mAde) 2N964,2N965,2N966 - 0.18 0.35
2N960,2N961,2N962 - 0.20 0.40
(IC = 100 mAde, IB = 10 mAde) 2N964,2N965,2N966
2N960, 2N961, 2N962
-- 0.27
0.30
0.60
0.70

(IC = 10 mAde, IB = 1 mAde) All Types 0.30 0.40 0.50
(IC = 50 mAde, IB = 5 mAde) All Types 0.40 0.55 0.75
(IC = 100 mAde, IB = 10 mAde) 2N960,2N961,2N964,2N965 0.40 0.65 1. 00
2N962,2N966 0.40 0.75 1. 25

(l:E
= 20 mAde, VCB = 1. 0 Vde, f = 100 MHz) 300 460 -
2-127
2N960 SERIES (continued)

(VCS = 10 Vde, ~ = 0, f = 1 MHz) - 2.2 4.0
Emitter Transition Capacitance C'!'e pF

(VES = 1 Vde) - 2.0 3.5
Turn-On Time All Types ns

ton
(IC = 10 mAde, lSI = 5 mAde, VSE(off) = 1. 25 Vde) - 35 50
(IC = 100 mAde, lSI = 5 mAde, VSE(off) = 1.25 Vde) - 30 50

(IC = 10 mAde, lSI = 1 mAde, Ia2 = 0.25 mAde)
2N960,2N961,2N964,2N965 - 60 85
2N962,2N966 - 80 100
(IC = 100 mAde, IBI = 5 mAde, IB2 = 1.25 mAde)
2N960,2N961,2N964,2N965 - 50 85
2N962,2N966 - 60 100
Rise Time Constant TRE - 0.6 - ns
Hole Storage Factor K' s - 16 - ns
Fall Time Constant . TFE - 0.5 - ns
Total Control Charge pC
~
(IC = 10 mAde, IB = 1 mAde) 2N960,2N961,2N964,2N965 - 50 80
2N9 62, 2N966 - 60 90
(Ie = 100 mAde, IB = 5 mAde) 2N960, 2N961, 2N964, 2N965
2N962,2N966
-- 80
100
125
150
2N963 (GERMANIUM)
2N967
CASE22~
(TO-1S)
Collector
connected to case
MAXIMUM RATINGS
Collector-Emitter Voltage VCES 12 Vde
Total Device Dissipation @T A = 25°C PD 150. mW

Total Device DiSSipation @T C = 25°C PD 300 mW

Operating and Storage Junction TJ,Tstg °c

Temperature Range 100
2-128
ELECTRICAL CHARACTERISTICS ITA = 25 0 C unless otherwise noted)

(IC = 100 MAdc, ~ = 0) 12 -
(~ = 100 MAdc, IC = 0) 2.0 -
Collector-Latch-up Voltage LV CEX Vdc
(VCC = 10 Vdc) 10 -
Collector Cutoff Current ICES MAdc
(V CE = 12 Vdc, VBE = 0) - 100
Collector Cutoff Current ICEX MAdc

(V CE = 10Vdc, VBE = 0.3Vdc, TA = 550 C) - 20
Collector Cutoff Current ICBO MAdc

(V CB = 6 Vdc, IE = 0) - 5.0

(VBE = 5 Vdc, IC = 0) - 1.0
Base Cutoff Current IBL MAdc

(VCE = 10 Vdc, VBE = 0.3 Vdc, T A = 55 0 C) - 20

(IC = 10 mAdc, VCE = 0.3 Vdc) 2N963 20 -
2N967 40 -
Collector Saturation Voltage VCE(sat) Vdc
(Ie
= 10 mAdc, Ia = 1 mAdc - 0.2
Base-Emitter Saturation Voltage Vdc

VBE(sat)
(IC = 10 mAdc, IB = 1 mAdc) 0.3 0.5

(IC = 20 mAdc, VCE = 1 Vdc, f = 100 MHz) 300 -

(VCB = 5 Vdc, ~ = 0, f = 1 MHz) - 5.0

(VBE = 1 Vdc, IC = 0, f = 100 kHz) - 4.0
Turn-On Time ton ns

(Ie= 10 mAdc, IBl = 1 mAdc, VBE (off) = 1.25 Vdc) - 60

(IC = 10 mAdc, Ia1 = 1 mAdc, IB2 = 1. 25 mAdc) - 120
Total Control Charge pC

(IC = 10 mAdc, IB = 1 mAdc)
~ - 120
2-129
i COLLECTOR·EMITTER SATURATION VOLTAGE

versus BASE CURRENT
VOLTAGE versus TEMPERATURE CHARACTERISTICS
... 1.0 ~-T""-""T"--"'~--r---r--r---'
~ 0.7
T. = 25°C 0.8
~ 0.6
~
::>
~
~ 0.4
0.5
" !'-o.. 50 mAde
..... ..........
1
0.61--==I""-"=~I--+=-+--+--I
0.4 I-.......!:::::::--F:::::.+--...LJ
~ 0.3 m de
r-
I--+=,.,r=-
~ 0.2 " 0.2
~ 0.1
0.1
Ie 2 mAde-
0.2 0.30.4 0.6. O.B 1.0 3 4 56 -75 --50 -25 25 50 75 100
I,. BASE CURRENT (mAde) TA • AMBIENT TEMPERATURE (OC)
COLLECTOR LATCH·UP VOLTAGE TEST CIRCUIT 10·mA (Ie) SWITCHING TIME TEST CIRCUIT
TYPf RSAMPLING
TEKTRONIX 541 RESiSTOR
OR EQU IYALENT 280 0 20 [I -3.1 Ydc
+0.3 Ydc o
SOOn INPUT SIGNAL
<>--'IN'> +1.25 Ydc NOTE,
4.BK Ic =-10mAdc
°li
1... =-1 mAde
-2.5Vdc In = +0.25 mAde
200 {I
Y" (0) = +1.25 Ydc
PULSE VOLTS USE TEKTROIlIX TYl'E "R"
Vee = -lOVdc -5.4 Yde INTERNAL RESISTANCE PLUG·IN
•TEKTRONIX TYPE 581 SCOPE
OR EQUIYALENT
BASE AND COLLECTOR CUTOFF CURRENT TEST CIRCUIT 10·mA (Ie) TOTAL CONTROL CHARGE TEST CIRCUIT
-3.1 Ydc
'V" 10011 A' 300 {I
NOTE,
Ie = -10 mAde
U I. = -1 mAde
-O.lBVde
+0.3Vde
-5.4 Ydc
It pOint A
.,..
nJCt 1
10 ns
MAX
I -
..
T
20 ...
MAX
+V --
NORMALIZED DC CURRENT TRANSFER RATIO CURRENT GAIN·BANDWIDTH PRODUCT (fT)

versus COLLECTOR CURRENT versus COLLECTOR CURRENT
~
o
5 2.0 500
-
I I I I .... .! 1. .1
ffi 1.5 '-'
-!t:. ~II
~ 1.2 - .~.
.\ 85"C.....
I I L
I
5
~ 400
Vde
V .....- :::~ -t{'

~ 1.0 V
-
+?5°C
!Z 0.8 '"....o
~ lOO =
~ 0.6
./ DoC V Vel 0.5 Vdc "
~
V ." 1 ~Z 200
~ 0.4
~ 0.3
.L' ....... =<
'"....
..
:::;
~ 0.2
. / ..-r:: = -5rC
Vc~
I
== 1 Vdc ~
~
100
" ~ 25°C
o
Z 0.15
..... I III I I I .£ 0
i 1 10 20 50 2 10 20 50
Ie. COllECTOR CURRENT (mAde) Ie, COllECTOR CURRENT (mAde)
2-130
2N964 (GERMANIUM)
2N964A (GERMANIUM)
\ PNP germanium epitaxial mesa transistor for high-

CASE 22
(TO-18)
MAXIMUM RATINGS

Collector-Emitter Voltage VCEO 7.0 Vdc

Total Device Dissipation@ TC = 25°C PD 300 mW


Thermal Resistance, Junction to Case 8JC 0.25 °C/mW
Thermal Resistance, Case to Ambient 8CA 0.5 °C/mW
FIGURE 1 FIGURE 2
280[1 20" -3.1Vdc 480 2H 5.2 Vdc
..--""""'~"""",'Ir--<>
INPUT SIGNAL TYPE R SAMPLING INPUT SIGNAL TYPE R SAMPLING
+ 1.25 Vdc RESISTOR + 1 25 Vdr. RESISTOR
4.8K NOTL 900 n NOTE·
Ie::::: -10 mAde I, = -100 mAde
200 !l 1'1 = -1 mAde 100 H 1,1:::: ·--5 mAde
PULSE VOLTS III= +0.25 mAde PULSE VOLTS 1'1 -= + 1.25 mAde
-5.4 Vdc VOl = + 1.25 Vdc 5.7Vdc VOl :-:: + 1.25 Vdc
INTERNAL RESISTANCE INTERNAL RESISTANCE
USE TEKTRONIX TYPE "R" USE TEKTRONIX TYPE .oR"
PLUG-IN PLUG-IN
TEKTRONIX TYPE 581 SCOPE TEKTRONIX TYPE 581 SCOPE
OR EQUIVALENT OR EQUIVALENT
IO-mA (Ie! SWITCHING TIME TEST CIRCUIT IOO-mA (Iel SWITCHING TIME TEST CIRCUIT
2-131
2N964A (continued)
ELECTRICAL CHARACTERISTICS (T A ~ 25°C unless otherwise noted)
I· Characteristic I Fig. I Symbol I Min Typ Max Unit

OFF CHARACTERISTICS
<Ie
= 10 mAde, IB =0) 7.0 - -
(Ic' =100 lIMe, IE =0) 15 25 -
Emitter-Base Breakdown Voltage BVEBO VCle
(IE = 100 /lAde, IC =0) 2.5 - -
Collector Latch-up Voltage 3 LVCEX 11.5 - - Vde
Collector-Emitter Cutoff Current /lAdc

(VCE = 15 Vde, VBE =0)
ICES
- - 100
Collector Cutoff Current ICBO pAdc

(VCB = 6 Vde, IE = 0) - 0.4 3.0
Base Leakage Current 4 IBL pAde

(VCE = 6 Vde, VBE(off) =O. 5 Vde) - - 4.0
(VCE =6 Vde, VBE(off) =o. 5 Vde, TJ =85°C) - 50 140
ON CHARACTERISTICS
DC Current Gain 8 hFE
(IC =10 mAde, VCE =0.3 Vde) 40 80 -
CIc
=10 mAde, VCE =0.3 Vde, TJ = _55°C) 20 45 -
(IC = 50 mAde, VCE = 1 Vde) 48 105 -
(IC = 100 mAde, VCE = 1 Vde) 40 95 -
<Ie =100 mAdc, VCE = 1 Vde, T J =850 C) 35 85 -
Collector Saturation Voltage 5 VCE(sat) Vde
(IC = 10 mAde, IB = 1 mAde) - 0.1 0.18
(IC =50 mAde, IB =5 mAde) - 0.16 0.28
(IC = 100 mAde, IB = 10 mAde) - 0.22 0.4
Base-Emitter Saturation Voltage 6 VBE(sat) Vdc

<Ie =10 mAde, IB =1 mAde) 0.3 0.38 0.44
CIc = 50 mAde, IB = 5 mAde) 0.4 0.48 0.58
(IC = 100 mAde, IB = 10 mAdc) 0.4 0.6 0.72
(IE = 20 mAde, VCB = 1 Vdc, f = 100 MHz) 300 460 -
High-Frequency Current Gain hfe -
(IC = 20 mAde, VCE = 1 Vdc,f = 100 MHz) 3.0 4.6 -
Output CapaCitance 11 Cob pF
(VCB = 1 Vde, IE =0, f = 1 MHz) - 2.7 5.0
(VCB = 10 Vde, IE = 0, f = 1 MHz) - 2.2 4.0
Input CapaCitance 11 Cib pF

(VBE = .1 Vde, IC =0, f = 100 kHz) .- 2.0 3.5
Delay Time Plus Rise Time

<Ie
= 10 mAde) 1
td + tr
. 35 50
ns
(IC = 100 mAde) 2 - 30 50
Storage Time Plus Fall Time ts + t f ns

CIc = 10 mAde) 1 - 60 85
<Ie = 100 mAde) 2 - 50 85
Active Region Time Constant 9 TA ns

CIc = 10 mAde) - 0.6 1.5
Total Control Charge 10

~ pC
(Ic = 10 mAde, IB = 1 mAde) - 50 75
2-132
2N964A (continued)
2N964A LIMIT CURVES
FIGURE 3-AREA OF PERMISSIBLE LOAD LOCI

100
1
80 \
\, COLLECTOR LATCH-UP VOLTAGE TEST CIRCUIT

+0.3 Vdc
5000 TEKTRONIX 541
\
°tf
- 2.5 Vdc
.220 0
OR EQUIVALENT
t,< 2.0 ns
LATCH-FREE
LOAD LINE AREA
\ Vee = -11.5 Vdc
1\, LATCH-UP AREA
Llltch-up Free Operall". ArII. Latch-up is the failure of the caI-

lector potential to return to the supply voltage upon turn-off.
\ The curve shows the permissible operating area to avoid latch-up.
Load excursions must not pass through the shaded area. Excur-
\ sions into the shaded area will not necessarily harm the transis-
20 \ 1\
tor, but may produce the re duction in output voltage noted above
and cause high power dissipation.
\ AREA OF \
LATCH-FREE OPERATION
WHEN It OF OUTPUT 1\
N41
10
Va, COLLECTOR-EMITIER VOLTAGE (VOLTS)
\
r\
15 20
FIGURE 4-COMMON EMITTER DC LEAKAGE CHARACTERISTICS

300
~5·C
Va = 6V
,
...,"" ~
200 T,
ilOO
....z:
70
f
"- ')
::!
..,::>'"
50 - Vr ,
T,
w 55·;,.....--
'"
~
THRESHOLD -' /'
VOLTAGE
I .----1 /'
r
!::i 20 BASE LEAKAGE CURRENT TEST CIRCUIT
~
:& 10
~ T'=~5.C./~
:::>
:&
7 B••• L•• kag" Current_ In •. is defined as base leakage
~
:& current with both junctions reverse biased. Ie is
.,j always less than 1m. for Von> V'r' (V OH is off condi-
./
tion base bias, VT is base voltage at threshold of
2
,/ conduction.)
-0.5 o 05 1~ 15 2.0
Vo" BASE-EMInER REVERSE BIAS (VOLTS)
NOTE, Limit Curves are based on periodic engineering evaluation. Production Tests are made at points
indicated in the Electrical CharacteriStics Table.
2-133
2N964A (continued)
2N964A LIMIT CURVES
FIGURE 5-COLLECTOR·EMITTER SATURATION VOLTAGE versus BASE CURRENT

1.0
TJ 25°C ~.I
.~ VeE =0 0.15 + 2.2 Ie
0.7 @ le ll , 2.5
in \ I\,
!:;
0
\
~
.... 0.5 \
'" \
~> \ \ Ie - 100 mAde '-
'"
....
0
~ '\..
~0 0.3 " ~ ......
t:
::0 ~ 50 mA
~
--
:::>
::0
;::;:
c(
::0 \ i'-..
e
> 0.2
r-.... I-- 20mA
IOmA
0.15
0.2 0.3 0.5 1.0
IIII 10 20 30 50
I,. BASE CURRENT (mAde)
FIGURE 6-BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT FIGURE 7- TEMPERATURE CO·EFFICIENTS

- 0.8 1.0
~
~ ~ 9,e(25'to~
-
o lei I, =0 10
....~
TJ 25!C
g 0.5 ~
-Ie/l, =0 10 .... VeEI.tl
'"~ is 9,e ( 55 to 25°C)
;:;
~ 0.6
it
~ V..... ....
o
i :;: -0.5
:1: ~ '":::>
~ 0.4 ~
Q,.
-1.0
::0
:::>
::0 i!i 9"
;::;: .... -1.5
c( VIElt.f)
::0
.; 0.2 -2.0
10 20 50 100 o 20 40 60 80 100
Ie. COLLECTOR CURRENT (mAde) Ie. COLLECTOR CURRENT (mAde)
FIGURE 8-CURRENT GAIN CHARACTERISTICS
-- -
60
.... -
- --
--
z 50 ~VeE 1 Volt
- ....
:;;:
'".... 40
- --~
--- --- -- - '- -- -- -t-..,
---
is \\
- ... -' --
.~-
.-
'"
-
--- - ... ...
a:
:::>
<>
::0
:::>
::0
30
~
---\\\'-
-- \\\
TJ =0 85°C
Z 20
i
-~-
1--
... - \\'::: TJ
TJ
=0
=0
25°C
DoC
"'-
~
"- rTJ _55°C
---
=0
1---
10
2 10 20 50 100
indicated in the Electrical Characteristics Table.
2-134
2N964A (continued)
2N984A LIMIT CURVES
FIGURE 9-SWITCHING TIME CURVES FOR RESISTOR COUPLED CIRCUITS
9a-RISE TIME FACTOR 9b-ACTIVE REGION TIME CONSTANT

1.5
I- - -
;;,:~
......... 1\ 1-,....
TYPICAL
LIMIT
or \
.......<> 1.4
\
..:ii!
:Ii
1.3 1\
......
<>
~
<>
\.
~
~
...
:Ii
...;::
!(l
1.2
1.1
" I,
:""-. 1'-0..
r-,... ' ...
" 1\
~ L-~
'"
r£
1.0
1.5 2 10
- 20
o
2
.... -.!o-1-14-
10 20
Ie, COLLECTOR CURRENT (mAde)
50 100
9c- FALL TIME FACTOR ACTIVE REGION TIME CONSTANT TEST CIRCUIT
~
1.0
I,..oo~ ....
.... 6000
~ 0.8 1/ SKL MODEL

HEWLETT·PACKARD TYPE
6K 185A SAMPLING SCOPE
~ / INPUT SIGNAL
PULSE GENERATOR
5.6K
i!!l 0.6
Ii
~ - I) ;A=TRI=TFE 500
~~ 0.4 II -6.DVde Tu= 1.1 ~

Ie.
...
:IE l.i
;::
/ SWITCHING TIME EQUATIONS
~ 0.2
....... ~ RISE·TIME = t, =T.fJ,R
FALL·TIME = tf = T.fJcF
.TA = active region time constant
T. =T•• =T" (Figure 9b)
o
.... 1-" STORAGE TlME·o.= t'. =TcoS fJo = h" at edge of saturation
.02 .05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, =10 to 90% rise-time (fJo = h" on Figure 8)
fJo/fJc tf -, 10 to 90% fall·time #F = Ie in saturation/ III (base "on"
t.=t'.+I,1ot, current)
9d-STORAGE TIME T c. = the effective collector recov· f3c = Ie in saturation/lu (base "off"
ery time and is virtually un- current)
2.0 influenced by current levels. Rsee Figure 9a
~ .I II I 20 ns typical and 60 ns F see Figure 9c
1.8 t-- Ic
;: -« 1m / maximum for this transistor. S see Figure 9d
c 1.6 t-- Po
!::l
-'
II
1.4
~ 90%
..
'"
0
~
~
<.>
1.2
1.0
~ 1/
...
:Ii
0.8
V
...
;:: 0.6
(!J 1/
:! 0.4
0
Ii;
.,; 0.2
V
.0
0.1 0.2 0.5 1.0 10 20
1"11,,, CIRCUIT DRIVE RATIO
2-135
2N964A (continued)
2N964A LIMIT CURVES
FIGURE 10-TOTAL CONTROL CHARGE

1000
"'Adjust V•• for -5.4 volt pulse at point A
15 pF
700 ,--"1\"""'-'0-3.1 Vdc
"V,. 100 n 300 !l
..,or
Ii 500 - Ve• = 6V
NOTE,
Ie::: -10 mAde
;;
~
:.s...
lell, =10 ~ tU ..J..1~01H.Re"y JfC
i_+
I, = -1 mAde
O% , --90%
_t
~ ":' -=
-5.4 Vdc
.." TJ = 100''l at point A r1, -- J
~
:z: 200
-41! .. 20mv
10 ns MAX
'"'
-' MAX
0
....
'"z:
0
'"'~ 100
§ Y(,=25'C
lOb
Total Control Charge. When a transistor is held in a conduc-

....
0
70 tive state by a current, 1m , a charge Q8 is developed in the
:E
:::>
:E
active region. A charge QT of opposite polarity, equal in
50 magnitUde, can be stored on an external capacitor C to
~ 1,....00- . " neutralize the internal charge and considerably reduce the
:E
,j turn-off time of the transistor. Figure lOb shows the test
circuit and turn-off waveform. Given QT from Figure lOa,
the external C for worst case turn-off in any circuit is:
20 C = QT/b. V, where b. V is defined in Figure lOb.
0.2 0.5 0.7 1.0 2.0 5.0 7.0 10
I" BASE CURRENT (mAde)
lOa
FIGURE 11- JUNCTION CAPACITANCE VARIATIONS
10
--J TYPICAL
_LIMIT
g
...z:j
'"';:>
(3
~
~
;3
z:
0
;:: ~ C••
'"'z 4
~
....~
:E
:::>
--~
:E
~
:E ',C,.
--- --- --- --- C••
....
~
o
10
REVERSE BlAS (VOLTS)
NOTE, Limit Curves are based on periodiC engineering evaluation. Production Tests are made at points
2-136
2N965 (GERMANIUM)
2N966
2N967 (GERMANIUM)
CASE 22
(TO·1S)
\
PNP germanium mesa transistors for high-speed
MAXIMUM RATINGS
2N969 2N970 2N971

Rating Symbol 2N968
2N972 2N973 2N974 2N975
Unit
Collector-Emitter Voltage VCES 15 12 12 7.0 Vdc
Collector-Base Voltage VCB 15 12 12 7.0 Vdc
Emitter-Base Voltage VEB 2.5 2.0 1. 25 1. 25 Vdc

Total Device Dissipation @ TC =25°C PD 300 mW

Derate above 25°C 4.0 mw;oC
Operating and storage Junction

2-137
NORMALIZED D.C. CURRENT GAIN CURRENT GAIN·BANDWIDTH PRODUCT (fT)

versus COLLECTOR CURRENT versus COLLECTOR CURRENT
10 500
8
6
r-- VeE = 1 Vdc
N 400
-
:&:
2.0 OS
.... ~
+ ?~ ~ 300
1.0
0.8
0.6
./
./
+25°C_
l.----" _ 550 C
-- ./
~
:&:
6 200
if
/
0.4
0.2
-!.---- ~
~
"
z
<Ii
z: 100
VcE =lVdc
T" = 25°C
O. 1
) ......-- V ~
0.1 0.2 0.5 1.0 ' 2.0 10 20 50 100
o
o 10 20 30 40 50
Ie, COLI ECTOR CURRENT (mAde)
COLLECTOR SATURATION VOLTAGE versus AMBIENT TEMPERATURE STORAGE TIME versus CIRCUIT CURRENT RATIO
g
"w
""
~
§! 0.25
o. 3
?
Ic=1 2 ~ ~
§
~
100
80 r----- Ie = 25 mAde
z
";::
)/ z
"'"
;;.
w TA = 25°C
~ o. 2
,,- V mAd,7""'~ '";::
1
60
Ie = 10 ~
~ I•• 4182
~
V ~ R, = 100 f!
B V ~ r-- I ~ 10 mAde R, lKn_
g
<.>
0.15
V - 40
-
~ - .. ~
--
I---llc/l,t lOl- 20
~ O. l 5 10 15 20
75-50 -25 0 +25 +50 + 75 + 100
T" AMBIENT TEMPERATURE (OC) lei I,,, CIRCUIT CURRENT RATIO
Characteristic
OFF CHARACTERISTICS
(IC = 100 ",Adc, IE = 0) 2N968,2N972 15 25 -
2N969, 2N970, 2N973 , 2N974 12 20 -
2N971,2N975 7.0 15 -
(IE = 100 ",Adc,. IC = 0) 2N968, 2N972 2.5 - -
2N969,2N973 2.0 - -
2N970,2N974 1.25 - -
2N971 , 2N975 1.25 - -
Collector Cutoff Current ICES ",Adc
(VCE = 15 Vdc, VBE = 0) 2N968,2N972 - - 100
(VCE = 12 Vdc, VBE = 0) 2N969, 2N970, 2N973, 2N974 - - 100
(VCE = 7 Vdc, VBE = 0) 2N971,2N975 - - 100
Collector Cutoff Current ICBO ",Adc

(VCB = 6 Vdc, IE = 0)
2N968, 2N969, 2N970, - - 3.0
2N972, 2N973, 2N974
2N971,2N975
-- -
-
3.0
10
2..,...138
Characteristic
ON CHARACTERISTICS
DC Current Gain
hFE
CIc = 10 mAde, VCE = O. 5 Vde) 2N968, 2N969, 2N970, 2N971 17 35 -
2N972, 2N973, 2N974, 2N975 40 75 -
CIc = 25 mAde, VCE = O. 7 Vde) 2N968, 2N969, 2N970, 2N971 20 40 -
2N972, 2N973, 2N974, 2N975 40 85 -
VCE(sat) Vdc
CIc = 10 mAde, IB = 1 mAde) - 0.19 0.25
(Ic .. 25 mAde, IB = 1. 5 mAde) - 0.25 0.5

VBE(sat)
(Ic = 10 mAde, IB = 1 mAde) 2N968, 2N969, 2N972, 2N973 0.30 0.39 0.55
2N970, 2N971, 2N974, 2N975 0.30 0.43 0.65
CIc = 25 mAde, IB = 1.5 mAde) 2N968, 2N969, 2N972, 2N973 - 0.45 0.80
2N970, 2N971, 2N974, 2N975 - 0.60 1.0
~ = 10 mAde, VCB = 1 Vdc" f '" MHz) 250 320 -
(VCB = 10 Vde, IE = 0, f = 1 MHz) - 4.0 9.0
Emitter Transition Capacitance C Te pF

(VEB = 1 Vde, Ie
= 0) - 3.5 -
Turn-On Tlme ton ns
(VBE(off) '" 1.25 Vdc, IC = 10 mAde, IBl = 1 mAl
2N968, 2N969, 2N972, 2N973 - ' 50 75
2N970, 2N971, 2N974, 2N975 - 65 100

(IC = 10 mAde, ISl = 1 mAde, IS2 " 0.25 mAde)
---
2N968,2N969 70 150
2N972,2N973 75 175
2N970, 2N971, 2N974, 2N975 100 275
Total Control Charge

~ pC
CIc = 10 mAde, IB = 1 mAde) 2N968, 2N969, 2N972, 2N973 - 75 100
2N970, 2N971, 2N974, 2N975 - 80 150
(IC = 25 mAde, Is = 1. 5 mAde) 2N968, 2N969, 2N972, 2N973 - 90 175
2N970, 2N971, 2N974, 2N975 - 175 300
2-139
2N978 (SILICON)
PNPSILICON
AMPLIFIER
TRANSISTOR
PNP SILICON ANNULAR TRANSISTOR
designed for general-purpose amplifier applications_
• Collector-Emitter Sustaining Voltage -

VCEO(sus) = 20 Vdc (Min) @ IC = 100 mAdc
*MAXIMUM RATINGS
l~r
Emitter-Base Voltate
VCEO
VCB
VEB
20
30
5_0
Vde
Vde
Vde
~::: I
DIAl OIA l
I w,o
-T
Total Device Dissipation@TA = 25°C PD 0.33 Watt
Total Device Dissipation @T C ~ 25°C PD 1.25 Watts
j
0.500
10 mW/oC
~OIA
Derate above 25°C
Operating and Storage Junction TJ,T stg -65 to + 200 °c
Temperature Range
Pin 1. Emitter
2. Base 1
3. Collector
-Indicates JEDEC Registered Data.

CASE 22 (I)
(TO-IS)
2-140
2N978 (continued)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage( 1) VCEO(sus) 20 - Vde
(lC = 100 mAde, IB =0)
Collector-Base Breakdown Vololage BVCBO 30 - Vde
(lC = 1.0 mAde, IE = 0)
(VCB = 10 Vde, IE = 0 - 5.0
(VCB = 10 Vde, IE = 0, TA = 150o C) - 200
Emitter Cutoff Current lEBO - 200 "Ade
(VEB = 1.0 Vde, IC = 0)
ON CHARACTERISTICS
DC Current Gain(l) hFE -
(lC = 30 mAde, VCE = 10 Vde) 15 -
(~C = 150 mAde, VCE = 10 Vde) 15 60
Collector-Emitter Saturation Voltage VCE(seti - 1.5 Vde
(lC = 150 mAde, IB = 15 mAde)
.Base-E mitter Saturation Voltage VBE(seti - 1.5 Vdc
Output Capecitance Cob - 45 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small-Signal Current Gain hfe 2.0 - -
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)

(llPulse Test: Pulse Width = 300 "s, Duty Cycle = 1.0%.
2-141
2N985 (GERMANIUM)

CAU22
(TO-lS)
MAXIMUM RATINGS

storage Temperature Tstg -65 to +100 °c
Device Dissipation
@ TC = 25°C PD 300 mW
Device Dissipation
@ TA = 25°C PD 150 mW
SWITCHING TIME TEST CIRCUIT
Vcc= -lO.3V
~--------~---------oVoo,
+l.2::'tf-__ V" I OSCILLOSCOPE RISE TIME"", 1 ns

I
1 KIl _.1._ TOTAL COLLECTOR SHUNT
-5.5V ,~, C, CAPACITANCE"" 6 pF
INPUT PULSE
I
I
t. "'" 1 ns I
t,::=: 1 ns ~
PW~200ns
2-142
2N985 (continued)

(IC = 100 !lAdC, IE = 0) 15 -
(IC = 5 mAde, IB = 0) 7.0 -
Collector-Emitter Breakdown Voltage BVCES Vde
(Ie = 100 !lAde, RBE = 0) 15 -
(IE = 100 !lAde, IC = 0) 3.0 -
Collector Cutoff Current leBO !lAde
(VCB = 5 Vde, IE = 0) - 3.0

(V EB = 3 Vde, Ie = 0) .- 100

(Ie = 10 mAde, VCE = 0.25 Vde) 40 -
(Ie = 100 mAde, VCE = 0.5 Vde) 60 -
Collector· Saturation Voltage Vde
VCE(sat)
(Ic = 10 mAde, IB = 0.5 mAde) - 0.15
(IC = 100 mAde, IB = 5 mAde) - 0.30

(IC = 10 mAde, IB = 0.5 mAde) 0.28 0.40
(IC = 100 mAde, IB = 5 mAde) 0.40 0.60
Small Signal Current Gain -

(VCE = 2 Vde, IC = 30 mAde, f = 100 MHz)
Ibrel
3.0 -
(VCB = 5 Vde, IE = 0, f = 1 MHz) - 6.0
Turn-on Time ns
(IC = 10 mAde, IBI = 5 mAde, VBE(O) = 1.25 Vde)
ton - 35
Turn-off Time ns
(Ie = 10 mAde, IB1 = 5 mAde, IB2 = 1.25 rnA)
toft - 80
2N 995 (SILICON)
For Specifications, See 2N869 Data,
2-143
2N996 (SILICON)
PNPSILICON ANNULAR TRANSISTOR

PNPSILICON
TRANSISTOR
· .. designed for general-purpose amplifier applications.

VCEO(sus) = 12 Vdc (Min) @ IC = 10 mAdc
• Collector-Base Breakdown Voltage -
BVCBO = 15 Vdc (Min) @IC = 10 J.LAdc
• Emitter-Base Breakdown Voltage -
BVEBO = 4.0 Vdc (Min)@IE = 10J.LAdc
/!
*MAXIMUM RATINGS
Total Device Dissipation@TA "" 2SoC Po 360 mW

Total Device Dissipation @TC=: 25°C Po 1.2 Watts
Operating and Storage Junction TJ.Tstg -65 to +200 °c
Temperature Range
• Indicates JEDEC Registered Data.

STYLE 1
Pin 1. Emitter
2. Base
3. Collector
0.028
0.04ll

CASE 22111
ITO-181
2-144
2N996 (continued)
*ELECTRICAL CHARACTERISTICS (T A; 25°C unless otherwise noted)

Characteristic Svmbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage I 1) VCEOlsus) 12 - Vdc
IIc = 10 mAde, IB = 0)
Coliector~Base Breakdown Voltage BVCBO 15 - Vde
IIc = 10 "Ade, IE = 0)
liE = 10 "Ade, IC = 0)
IVCB = 10 Vde, IE = 0) - 0.005 "Ade
IVCB = 10 Vde, IE = 0, TA = 150°C) - 15 "Ade
IVBE = 4.0 Vde, I C = 0)
ON CHARACTERISTICS
DC Current Gain hFE 35 - -
IIC = 20 mAde, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage VCElsatl - 0.3 Vde
IIc = 60 mAde, IB = 2.0 mAde)
Base-Emitter Saturation Voltage VBElsat) - 0.95 Vde
(lc = 20 mAde, IB = 2.0 mAde I
OYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Produet(21 fT 100 - MHz
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHzl
Output Capacitance Cob - 10 pF
(VCB = 10 Vde, IE = 0, f = 100 kHz to 1.0 MHzl
·1 ndicates JE DEC Registered Data.

(1)Putse Test: Pulse Width ~300 Ils, Duty Cycle s;'2.0%.
(2)fT is defined as the frequency at which Ihfel extrapolates to unity.
2-145
2N998 (SILICON)
Darlington amplifier containing two NPN silicon an-

nular transistors is designed for applications requiring
very high-gain, low-noise, and high-input impedance.
B,
CASE 20(8)
(TO·72)
MAXIMUM RATINGS
Rating Symbol 2N998 Unit
Total Device Dissipation @ T A = 25°C Po 0.5 watt

Total Device Dissipation @ T C = 25°C Po 1.8 Watts

2-146
2N998 (continued)
ELECTRICAL CHARACTERISTICS CT. = 2O'C .. Ie.. oth....' ....... )

OFF CHARACTERISTICS
Collector-Emitter Sustaining Yoltage 111 BYCEO(sus) Yde
(Ie = 30 mAdc, IB = 0) 60 -
Collector-Base Breakdown Voltage BYCBO Yde
(Ie = 100 "Ade, IE = 0) 100 -
Emitter-Base Breakdown Voltage BY EBO Yde
(IE = 10.0 "Ade, IC = 0) 15 -
(YCB = 90 Yde, IE = 0) - 0.01
(YCB = 90 Yde, IE = 0, TA = 150o C) - 15
Emitter Cutoff Current lEBO p.Adc

(Y BE = 10 Yde, IC = 0) - 0.01
ON CHARACTERISTICS
DC Current Gain ~ " hFE -
(Ie = 1 mAde, YCE = 5 Yde) 600 -
(Ie = 10 mAde, YCE = 5 Yde) 1,600 8,000
(IC = 100 mAde, YCE = 5 Yde) 2,000 -
(Ie = 10 mAde, YCE = 5 Vde, measured 25 -
across each transistor within the device)
(YCB = 10 Yde, IE = 0, r = 140 kHz) - 30
Input Capacitance C lb pF
(Y BE = 0.5 Yde, Ie = 0, r = 140 kHz) - 50
Small-Signal CUrrent Gain hre -

(Ie = 1 mAde, YCE = 5 Vdc, f = 1 kHz) 1,000 -
NOise Figure-" NF" dB
(Ic = 0.1 mAde, YCE
f = 1 kHz, Bandwidth =
= 10 Yde, RS
200 Hz)
= 5 kQhms, - 6.0
111 Pulse Test: Pulse Width = 300 "S, Duty Cycle = 1%

··Measured with constant current supply of 20 ItAdc connected to the emitter of the input transistor. (See Figure 1)
FIGURE 1- NOISE-FIGURE TEST CIRCUIT
2-147
2N1008, A, B (GERMANIUM)
2Nl008B JAN AVAILABLE
CASE31(~
PNP germanium transistor for audio driver and med-
ium speed switching applications.
,1)_~
(TO-5)
All ,leads isolated
MAXIMUM RATINGS
Rating Symbol 2110118 2N1008A 2N10118B Unit

Collector-Emitter Voltage VCEO 20 40 60 Vdc
Base Current IB 30 mAdc
TA = 25°C 200 mW
derate 2.7S mW/oC
TC = 25°C 300 mW
derate 4.0 mW/oC
Junction and storage Temperature Range T J , T stg -65 to +100 °c
Characteristics SymbDI Min Typ Mu UNIT

Collector Leakage Current leBO /lAdc
:
~~g: ~~ ~~~! T A = S50C) ~:~~~: --- 5.0 10
--- --- 500
(VCB= 25 Vdc) 2N100SA --- 5.0 10
(VCB = 25 Vdc, TA = S50C)2N100SA --- --- 500
(VCB = 45 Vdc) 2N100SB --- 7.0 15
(VCB = 45 Vdc, ~A = S50C) 2N100SB --- --- 750
Emitter Leakage Current lEBO J1-Adc

(VEB = 10 Vdc) 2N100S --- ,5.0 10
ZN100SA --- --- 10
2N100SB --- --- 10

(Ie = 1.0 mAdc, RBE = 10 K)
2N100S 15 --- ---
2N100SA 35 --- ---
2N100SB 55 --- ---
Collector-Emitter Saturation Voltage VCE (sat) Vdc
(Ie = 100 mAdc, IB = 10 mAdc) --- --- 0.25

(Ie '" -10 mAdc, VCE = 5.0 Vdc,
hte ---
f= 1 kHz) 40 --- 150
Input Resistance (VCB = 6 V, IE = 1 mA) ~e 200 --- 1000 ohms
2-148
2N 1011 (GERMANIUM)
~
PNP germanium power transistor for general
purpose power amplifier and switching applications in
military and industrial equipment. Operating temper-
CASE 11 ature range and power dissipation exceed military
(TO-3) specifications.
MAXIMUM RATINGS
Rating Symbol 2N1Oll Unit


Total Device Dissipation @ T C = 25 0 C PD 90 Watts

Operating and Storage Junction TJ,T stg °c


Thermal Resistance, Junction to Case 9J C 0.8 °C/W
100
90
,,~
., 80
""'-
::::
g
:c6 60
POWER· TEMPERATURE
DERATING CURVE
i
rIl
is
..
~
~
40 '" ~,
"-,,~
~Q 20
10
o
o 20 40 60 80
"" 100
2-149
2Nl011 (continued)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted).
Characteristic Symbol Minimum Maximum Unit

'DC Current Transfer Ratio hFE - 150 -
VCE = 2 V
IC = 1. 0 Adc
DC Current Transfer Ratio hFE 30 75 -
VCE = 2 V
IC = 3.0 Adc
Small-Signal Current Transfer Ratio fae 5.0 - kHz
Cutoff Frequency
VCE = 2 Vdc
IC = 3 Amp
Emitter- Base Cutoff Current lEBO - 3.0 mAdc
VEB = 40 Vdc
IC = 0
Collector- Base Cutoff Current I CBO - 200 /.lAdc
VCB = 2 Vdc
IE = 0
Collector-Base Cutoff Current I CBO - 15.0 mAdc
VCB = 80 Vdc
IE = 0
Base Current IB 6.7 - mAdc
VCE = 2 Vdc
IC = 1 Adc
Base Current IB 40 100 mAdc
VCE = 2 Vdc
IC = 3 Adc
Emitter-Base Voltage VEB - 2.0 Vdc
VCE = 2 Vdc
IC = 3 Adc
Floating Potential Vfl - 1.0 Vdc
VCB = 50 Vdc
= 10 Megohm min)
Collector-Emitter Saturation Voltage VCE(SAT) - 1.5 Vdc
IC = 3 Adc
IB = 200 mAdc
Collector-Emitter Voltage BVCEO 40 - Vdc
IC = 300 mAdc
IB = 0
Collector'-Emitter Voltage BVCES 80 - Vdc
Ie= 300 mAdc
VEB = 0
High- Temperature Operation
TC = +90'C min
Collector Cutoff Current I CBO - 20 mAde
VCB = 30 Vdc
IE = 0
2-150
2N1021 (GERMANIUM)
2Nl022
PNP germanium powertransistorsfor industrial and

general purpose power amplifier and switching appli-
cations.
CASE 11
(TO-3)
MAXIMUM RATINGS (TC =250C unless otherwise noted)
Collector-Base Voltage VCB 100 120 Volts
Collector-Emitter Voltage VCEX 100 120 Volts
Collector-Emitter Voltage VCEO 50 Volts
Collector Current Ie 5.0 Amp
Operating Junction and storage

Temperature Range T J , Tstg -65 to +110 °c
Total Device Diss~ation @ TC = 25 0 C PD 85 Watts
Derate above 25 C 1.0 W/oC

@TA @Tc
5 100
85 Tc
4 80
~
---
3 60
-- ~
_IA
2.6
-----=-
2 40
20 ~
o o
o 25 50 75
~
- ~
100 110 125
TEMPERATURE (Oe)
2-151
2Nl021, 2Nl022 (continued)
ELECTRICAL CHARACTERISTICS (TC = 250 CJlntess.otllerwise noted)
Characteristic .Symbll Mill Mu Ualt

Collector-Base Cutoff Current leBO mAdc
(VCB = 50 Vdc) 2Nl021 - 0.5
(VCB = 60 Vdc) 2Nl022 - 0.5
(VCB = 100 Vde) 2Nl021 - 2.0
(VCB = 120 Vde) 2Nl022 - 2.0
(VCB= 50 Vdc, TC = + 55°C) 2Nl021 - 8.0

(V CB = 60 Vdc, TC = + 55°C) 2Nl022 - 8.0
Collector-Emitter Breakdown Voltage* BVCEO* Vde

(Ie = 200 mAde) 50 -
Emitter-Base Cutoff Current lEBO mAde
(V EB = 10 Vdc) - 0.5
(V EB = 30 Vdc) - 2.0

(VCE = -1.5 Vdc, Ie = 1.0 Adc) - :3.0

(Ie = 5 Ade, IB = 500 mAdc) - 0.5
DC CurreQt Gain
(IC = 1 Ade, VCE = 1.5 Vdc)
hFE
40 -
-
(Ie = 3 Adc, VCE = 1.5 Vdc) 35 -
(Ie = 5 Adc, VCE = 1.5 Vdc) 30 90
(IC .. 7 Ade, VCE = 1.5 Vdc) 22 -
Input Impedance hte ohms
(Ie = 1.0 Ade, \TCE = 1.5 Vdc) - 28
Current Gain-Bandwidth Product fT kHz

(Ie = 1.0 Adc, VCE = 2 Vdc) 200 -
*Sweep Test: 1/2 sine wave, 60 Hz •
2-152
2N1038 thru 2N 1041 (GERMANIUM)
2N2552 thru 2N2559
PNP GERMANIUM
PNP GERMANIUM MEDIUM POWER TRANSISTORS POWER TRANSISTORS
40-100 VOLTS
20 WATTS
· .. designed for relay drivers, pulse amplifiers, audio amplifiers and
high-current switching applications.
• High Current Capability - IC = 3.0 Amperes

• Guaranteed Excellent Collector-Emitter Sustaining Voltage
• 20-Watt Power Dissipation at 250 C Case Temperature
• 1000C Maximum Junction Temperature
:~I:D·E
0.310 DIA iUMI
*MAXIMUM RATINGS [J4O D.39O
Rating
Collector-Emitter Voltage veE a

2N!..~ 2Nl039 2N1041 21111041
Symbol 2N~~ 2N2553
2N2551 2N2557
30 40
~:=
21112555
2N25~
50 60
Unit
Vdc
o.011 0
0.028
,,-nfi-+ l
1.5
--~
BAS[O.0101
Collector-Base Voltage 40 60 SO 100 Vdc
~ ~~j
VeB
Emitter-Ba.. Voltage VEB ---- 20
- Vdc
Collector Current - Continuous Ie ---- 3.0
----- Adc
---
"Base Current - Continuous IB 1.0 Adc 2N1038-2N1041 CASE 180
Total Device Dissipation@TA - 25°C Po 450 mW

Derate above 25°C
Total Device Dissipation @Te =25°C 20
6.0 - mW/oe
-lir-!~l""·"ll.Emittel ~..... 0",~ 2.8ase
3. Collector
rna
Po Watts
----0.261---- w/oe ".~"~'" .i /.)(;O~o:no
r
~ l.:]-
__ -J "''
Derate above 25°C (Note 1)
111111 t ~~ ~0l)
• -Operating and Storage Junction TJ,Tstg - - - -65 to +100 - °e ""j ..~
0345 I. Ifoia ~.42~ 'f...... J"5'~
Temperature Range SEATING Olfll o.D12 ~~ If«y "<..
PLANE ~~~~
2N2552-2N2555 CASE 183
Characteristic I Symbol I Max I Unit
'.o~'''~
Thermal Resistance. Junction to Case I 8Je I 3.15 I °e/w 0.083
t-t.985 M I N _
"" [-~1.500MIN
Note 1: Case Temperatur. shall be measured 0.100 ± 0.010 inches above the
seating plane. IIII =+ ai~
0.022
•• Motorola guarantees this data In addition to the JEOEC
Registered Data shown. 0.485
om
{j 1l2.2lIUNF.2A
iillil
1. Emitter
2. Base
SEATING PLANE- 3. Collector
2N2556-2N2559 CASE 184
(All Tvpes)
2-153
2Nl038 thru 2Nl041/2N2552 thru 2N2559 (continued)
* ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage VCEO(sus) Vde
(IC " 100 mAde, IB " 0) 2NI038, 2N2552, 2N2556 30 -
2NI039, 2N2553, 2N2557 40 -
2NI040, 2N2554, 2N2558 50 -
2NI041, 2N2555, 2N2559 60 -
Collector Cutoff Current I CEO mAde
(V CE = 15 Vdc, IB'" 0) 2N1038, 2N2552, 2N2556 - 25
(V CE " 20Vdc, IB =0) 2NI039, 2N2553, 2N2557 - 20
(V CE = 25 Vdc, IB = 0) 2N1040, 2N2554, 2N2558 - 20
(V CE =30Vde, IB =0) 2NI041, 2N2555, 2N2559 - 20
Collector-Emitter Cutoff Current mAde

ICEX
(V CE " 40 Vde, V BE(off) " 0,2 Vde) 2NI038, 2N2552, 2N2556 - 0.65
(V CE " 60 Vde, V BE(ol!) " O. 2 Vde) 2NI039, 2N2553, 2N2557 - 0.65
(V CE " 80 Vde, V BE(ol!) = 0.2 Vde) 2NI040, 2N2 554, 2N2558 - 0.65
(V CE " 100 Vde, V BE (off) " 0.2 Vdc) 2NI041, 2N2555, 2N2559 - 0.65
(V CE " 20 Vde, VBE(Off) = 0.2 Vde, TC = 85°e) 2NI038, 2N2552, 2N2556 - 5.0
(V CE = 30 Vdc, V BE (off) = O. 2 Vde, TC " 85°e) 2NI039, 2N2553, 2N2557 - 5.0
(V CE = 40 Vdc, VBE(ol!) " 0._2 Vdc, TC = 85°C) 2NI040, 2N2 554, 2N2558 - 5.0
(V CE = 50 Vde, V BE(of!) = O. 2 Vde, TC = 85°C) 2NI041, 2N2555, 2N2559 - 5.0
Collector Cutoff Current I CBO !lAde

(V CB " 20 Vdc, IE" 0) 2NI038, 2N2552, 2N2556 - 125
(V CB = 30 Vde, IE = 0) 2NI039,2N2553,2N2557 - 125
(V C B = 40 Vdc, IE " 0) 2NI040, 2N2554, 2N2558 - 125
(V CB = 50 Vdc, IE = 0) 2NI041, 2N2555, 2N2559 - 125
**(V CB " 40 Vdc, IE " 0) 2NI038, 2N2552, 2N2556 - 750
**(V CB = 60 Vdc. IE = 0) 2NI039, 2N2553, 2N2557 - 750
**(V CB "80 Vdc, IE = 0) 2NI040, 2N2554, 2N2558 - 750
**(V CB " 100 Vde, IE = 0) 2NI041, 2N2555, 2N2559 - 750

(V BE = 20 Vde, Ie = 0) - 650
ON CHARACTERISTICS
(IC " 50 n\Ade, VCE = O. 5 Vde) 33 200
(Ie = 1. 0 Ade, VCE = 0.5 Vdc) 20 60

V CE(sat)
(I C = 1. 0 Ade, IB = 100 mAde) - 0.25
Base-Emitter Input Voltage V BE Vde

(I C = 1.0 Adc, VCE =0.5 Vdc) - 1.0
(I C = 500 mAde, V CE = 1. 5 Vde, I " 1. 0 kHz) 18 72
Small-Signal Current Gain I hlel -

(I C = 500 mAde, V CE = 1. 5 Vdc, I = 112.5 kHz) 2.0 -

**Motorola Guarantees this data in addition to the JEDEC Registered Data Shown.
2-154
2Nl 042 thru 2Nl 045 (GERMANIUM)
2N2560 thru 2N2567
PNP GERMANIUM
PNP GERMANIUM MEDIUM POWER TRANSISTORS POWER TRANSISTORS
40-100 VOLTS
20 WATTS
· .. designed for relay drivers, pulse amplifiers, audio amplifiers and

high·current switching applications.
• High Current Capability - IC = 3.5 Amperes

• Guaranteed Excellent Coliector·Emitter Sustaining Voltage
• 20·Watt Power Dissipation at 25 0 C Case Temperature
• 1000C Maximum Junction Temperature
:molA~
illi
0.310 DIA Q.lliI
*MAXIMUM RATINGS [340 0.390
2Nl042 2Nl043 2N 1044 2Nl045

-+ 0.1414

2N2564 2N2565 2N2566 2N2567
O.O"OIA
40 50 60 Vdc 0.028
Collector-Emitter Voltage VCEO 30
1.5
Collector-Ba.. Voltage 40 60 80 100 Vdc
~ ~ ~j
VeB
Emitter·Ba.. Voltage
Collector Current - Continuous
VEB
IC
-- 20
3.5
-- Vdc
Adc
------ -
Base Current - Continuous IB 1.0 Adc 2N2564 - 2N2567 CASE 180
Total Device Dissipation@TA =25°C Po 450 -- - - - mW

mW/oC
~ 943Mlt.I--1 LEmitter
H-~~
Derate above 25°C 6.0 __ I
r~.!~~
2. Base
:< /j,
'"''"~'" .it ~~~O/'.Ill!
3. Collector
Total Device Dissipation @TC =25°C Po ----20 Watts
W/oC
~~
-J """
Derate above 25°C (Note 1) -0.267----
IIIII1
~
""j "'"
**Operating and Storage Junction TJ,Tstg - -65 to +100 - - - °c O.3!5
1f.~65
L-:Je--
0012
I ~~o M~8 ~.421 'i-...."'<..PIO
il"U1y
Temperature Range SEAT!NG
PLANE
~~~
THERMAL CHARACTERISTICS 2N2560 - 2N2563 CASE 183
Characteristic
Thermal Resistance. Junction to Case
* Indicates JEOEC Registered Data.

Note1: Case Temperature shall be measured 0.'00 ± 0.010 inches above the
seating plane.
--Motorola guarantees this data in addition to the JEOEC Registered Data shown.
.....
om
lj 1l2.20UNf.2A
1. Emitter
2. Base
SEATlNGPLANE 3. Collector
2Nl042 - 2Nl045 CASE 184
(All Typ..l
2-155
2N1042 thru 2N1045/2N2560 thru 2N2567 (continued)
*ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
I Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage VCEO(sus) Vde
(lC = 100 mAde, IB = 0) 2Nl042,2N2560,2N2564 30 -
2N 1043,2N2561,2N2565 40 -
2N 1044,2N2562,2N2566 50 -
2N 1045,2N2563,2N2567 60 -
Collector Cutoff Current ICEO mAde
(VCE = 15 Vde, IB = 0) 2N 1042,2N2560,2N2564 - 25
(VCE = 20 Vde, IB = 0) 2Nl043,2N2561,2N2565 - 20
(VCE = 25 Vde, IB = 0) 2Nl044,2N2562,2N2566 - 20
(VCE = 30 Vde, IB = 0) 2Nl045,2N2563,2N2567 - 20
'Collector-Emitter Cutoff Current ICEX mAde
(VCE = 40 Vde, VBE(off) = 0.2 Vde) 2Nl042,2N2560,2N2564 - 0.65
(VCE = 60 Vde, VBE(off) = 0.2 Vde) 2Nl043,2N2561,2N2565 - 0.65
(VCE = 80 Vde, VBE(off) = 0.2 Vde) 2N 1044,2N2562,2N2566 - 0.65
(VCE = 100 Vde, V8E(off) = 0.2 Vde) 2Nl045,2N2563,2N2567 - 0.65
(V CE = 20 Vde, V BE (off) = 0.2 Vde, T C = 85°C) 2Nl042,2N2560,2N2564 - 5.0
(VCE = 30 Vde, VBE(off) =0.2 Vde, TC = 85°C) 2N 1043,2N 2561,2N2565 - 5.0
(VCE = 40 Vde, VBE(off) =0.2 Vde, TC = 85°C) 2N 1044,2N2562,2N2566 - 5.0
(VCE = 50 Vde, VBE(off) = 0.2 Vde, TC = 85°C) 2N 1045.2N2563,2N2567 - 5.0
Collector Cutoff Current ' le80 !lAde
(VCB = 20 Vde, IE = 0) 2N 1042,2N2560,2N2564 - 125
(VCB = 30 Vde, IE = 0) 2N 1043,2N2561,.2N2565 - 125
(VCB = 40 Vde, IE = 0) 2Nl044,2N2562,2N2566 - 125
(VC8 = 50 Vde, IE = 0) 2Nl045,2N2563,2N2567 - 125
**(VCB = 40 Vde, IE = 0) 2N 1042,2N2560,2N2564 - 750
**(VCB = 60 Vde, IE = 0) 2N 1043,2N2561,2N2565 - 750
**(VCB = 80 Vde, IE = 0) 2Nl044,2N2562,2N2566 - 750
**(VCB = 100 Vde, IE = 0) 2N 1045,2N2563,2N2567 - 750
Emitter Cutoff Current IE80 - 650 !lAde
(VBE = 20 Vde, IC = 0)
ON CHARACTERISTICS
(lC = 50 mAde, VCE = 0.5 Vdcl 50 -
(lC = 1.0Ade, VCE = 1.0 Vde) - 150
(lC = 3.0 Ade, VeE = 1.0 Vde) 20 60
Collector-Emitter Saturation Voltage VCE(,at) Vde
(lC= 1.0Ade,IB = 100 mAde) - 0.25
(lC = 3.0 Ade, IB = 300 mAde) - 0.75
Base-Emitter Input Voltage VBE - 1.5 Vde
(lC = 3.0 Ade, VCE = 1.0 Vde)
Small-Signal Current Gain hfe 25 100 -
(lC = 500 mAde, VCE = 1.5 Vde, f = 1.0 kHz)
Small-Signal Current Gain Ihfel 2.0 - -
(Ie = 500 mAde, VCE = 1.5 Vde, f = 125 kHz)
"'Indicates JEDEC Registered Data .

• "'Motorola Guarantees this data in addition to the JEDEC Registered Data Shown.
2-156
2N 1073 A, B(GERMANIUM) I
CASE4-~
(TO_41)1J4~
PNP germanium power transistors for high-voltage
power switching applications.
MAXIMUM RATINGS
Rating Symbol 2N1073 2N1073A 2N10738 Unit

Emitter-Base Voltage VEB 1.5 1.5 1.5 Vdc
Collector Current (Cont) lc 10 10 10 Amp
Base Current (Cont) IB 5.0 Amp
Emitter Reverse Current IE Amp
(Surge 60 cps Recurrent) 1.5
Storage and Operating Tstg
Temperature TJ -65 to +110 °c
Collector Dissipation PD Watts
(25 0 C Mtg. Case Temp.) 85
iloo
-
~ 60
80 - k:- 85 WAITS MAX
........... The maximum eonlinuous power is relaled 10
maximum junction temperature by the thermal
~
"'
resislanee factor. This curve has a value of 85
40 watts at a case temperature of 25'C and is 0
20 ~
iJ'i
....... ~OOC walts at 110'C with a linear relalion between
o 0 the Iwo temperatures such that:
ffi 0 25 50 75 100 125 110' - Te
~ Allowable p. = -1-.0- Watts
... Te. CASE TEMPERATURE (OC)
~
SAFE OPERATING AREAS - PULSE CONDITIONS
2Nl073 2Nl073A 2N1073B
10
500", :: 500",
S.O
V\I
- "'" 5m,
250~,
, 'V
25~", ,=
,.:;.c:-
3.0
\ IN \ 1m,
~ \ \.\ '\ Sm,
i"- " ~ ~ I-- "" 50",
~
i'" 1.0 sm,l\J

1m,
rj) \',e;sL, ~~ '\ 1m, ....,
<~ ~
'"'
'"
~
o.s
500~'
2S0~'
"'SO~,
:\=f-\
I ~ I'\. ~
•.,
0.3
'\
I'.,
is
'"'
~
'"
~
g
0.1
O~ .,..l
1\
OC-
"'r--.. '"t"". r-....
OC-
;;i
~
.os
.03
.01
o 10 20 30 40 10 20 30 40 SO 60 70 80 0 10 20 30 40 50 60 70 80 90 100 110 120
Ve•• COLLECTOR-EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate lc - (Duty cycle of the excursions make no significant
VCE limits below which the.device will not go into change 1D these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum Tl, the power-temperature
2-157
2Nl073, A, B (continued)

Collector-Base Cutoff Current ICBO mAdc
(V CB = 25 Vdc, IE = 0) 2N1073 - - 1.0
(V CB = 25 Vdc, IE = 0, T C =85'C) 2N1073 - - 15
(V CB = 40 Vdc, IE = 0) 2N1073 - - 20
(V CB = 60 Vdc, IE = 0) 2N1073A - - 1.0
(V CB = 60 Vdc, IE = 0, T C =85'C) 2N1073A - - 15
(V CB = 80 Vdc, IE = 0) 2N1073A - - 20
(V CB = 100 Vdc, IE = 0) 2NI073B - - 2.0
(V CB = 100 Vdc, IE = 0, TC = 85'C) 2N1073B - - 20
(V CB = 120 Vdc, IE = 0) 2N1073B - - 20
(V CB = 2. 0 Vdc, IE = 0) - - O. 3
Emitter-Base Leakage Current lEBO mAdc

(V EB = O. 75 Vdc) - - 50
Emitter Floating Potential VEBF Vdc

(V CE = 40 Vdc) 2N1073 - - 1.0
(V CE = 80 Vdc) 2N1073A - - 1.0
(V CE = 120 Vdc) 2N1073B - - 1.0
Collector-Emitter Breakdown Voltage* BV CER* Vdc
(IC = 50 mAdc, RBE = lOOn) 2N1073 40 - -
2N1073A 80 - -
2N1073B 120 - -
(Ie = 5.0Adc, VCE = 2.0 Vdc) 20 - 60
Small-8ignal Current Gain hfe -
(I C = O. 5 Adc, VCE = 12 Vdc, f = 30 kHz) - 15 -
Base Input Voltage VBE Vdc
(V CE = 2.0 Vdc, IC = 5.0 Adc) - - 1.0

V CE(sat)
(Ie = 5.0 Adc, IB = O. 5 Adc) - 0.5 1.0
Rise Time t
r
- 5.5 - /1S
Storage Time t
s
- 1.2 - /1s
Fall Time tf - 2.0 - /1s
*To avoid excessive heating of collector junction, perform this test with a sweep method.
COLLECTOR CURRENT versus BASE CURRENT COLLECTOR CURRENT versus DRIVE VOLTAGE
10
r---- J
- 55 ° C
+25°C
+IOOOC
/
/V
f
/; ~ Vel =- 2 V
100 200 300 400 500 600 700

o
o
~ ~ 0.5 1.0 1.5
I" BASE CURRENT (MILLIAMPS) VH • BASE· EMITTER VOLTAGE (VOLTS)
2-158
2Nl073, A, B (continued)
DC CURRENT GAIN versus COLLECTOR CURRENT COLLECTOR CURRENT versus DRIVE VOLTAGE
50 25
40 \ ' \
\ \~ ~ Vel =::: -2 V Ve• = MAX. RATING
/ I
~~~
~ - _55°C_
+ 100°C)
/
7 /
~
./
10
- +25 O C
+IOOoC
/ /
+2~ -5}!
o
2 ' 10 12 +0.3 +0.2 +0.1 -0.1 -0.2 - 0.3
Ie. COLLECTOR CURRENT (AMP) V". BASE·EMITTER VOLTAGE (VOLTS)
SWITCHING TEST CIRCUIT
MERCURY 4[1
SWITCH 0 -20!l
~
" '.: + -
I--------.-J
PULSE CONDITIONS; Ie
12 v
....._ _ _ _ _ _+-1111---_ _ _ _ _ _--J
= 3 Ade. I, = 300 mAde
2N 10 99 (GERMANIUM)
2N 1100 (GERMANIUM)
For SpeCifications, See 2N174 Data.
2-159
2N 1120 (GERMANIUM)
PNP germanium power transistor for military and

industrial power applications.
MAXIMUM RATINGS

Emitter Current IE 15 Adc

Derate above 25 0 C 1.2 W!oC

Thermal Resistance, Junction to Case (}JC 0.8 °C!W
100
90
~
'"
80
"
POWER·TEMPERATURE
DERATING CURVE
~
.§
-:;j
.So
'"
60 """ ~
is'" ~
"
0
...
Q)
p.,
40
",
p.,A 20
"- "-
10
o
o 20 40 60
o
T C' Case Temperature ( C)
80
""" 100
2-160
2N 1120 (continued)
ELECTRICAL CHARACTERISTICS (Te = 25 0 e unless otherwise noted)

OFF CHARACTERISTICS
(IC = 300 mAdc, IB = 0) 40 -
(IC = 300 mAdc, VBE = 0) 70 -
Floating Potential VEBF Vdc
(VCB = 80 Vdc, ~ = 0) - 1.0
(Voltmeter Input Resistance = 10 meg. min.)
Collector Cutoff Current ICBO mAdc

(VCB = 2Vdc, ~= 0) - 0.3
(VCB = 30 Vdc, ~ = 0) 20
(V CB = 80 Vdc, IE = 0) - 15
Emitter Cutoff Current ~BO mAdc

(V BE = 40 Vdc, IC = 0) - 5.0
Base Current IB mAdc

(V CE = 2 Vdc, IC = 5 Adc) 50 -
(VCE = 2 Vdc, IC = 10 Adc) 200 500
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 2.0 Vdc)
hFE
- 100
-
(IC = 10.0 Adc, VCE = 2.0 Vdc) 20 50

(IC = 10 Adc, IB = 1. 0 Adc) - 1.0

(IC = 10 Adc, IB = 1.0 Adc) - 1.5
Base-Emitter On Voltage VBE(on) Vdc

(IC = 10 Adc, VCE = 2 Vdc) - 2.0

(Ie = 5.0 Adc, VCE = 2.0 Vdc)
2-161
2N 1131 (SILl.CON)
2N1131JAN AVAILABLE
2Nl131A
2N1991
PNPSILICON
AMPLIFIER
AND
SWITCHING
PNP SILICON ANNULAR TRANSISTORS TRANSISTORS
· .. designed for medium-speed switching and amplifier applications
where low DC current gain is essential.
rr:=j
2N1131
2N1131A
• Low DC Current Gain -
hFE = 45 (Max) @ IC = 150 mAdc - 2N1131,A j
O"09m1~~~EATING
II
• Turn-On Time - ton = 45 ns (Max) - 2N 1131A
• Turn-Off Time - toff = 35 ns (Max) - 2N1131A
+=
0500 PLANE
L M!.!iDlA
0,019
Pin 1 Emili.,
*MAXIMUM RATINGS
CASE 79 (1)
Rating Symbol 2N1131 2N1131A 2N1991 Unit
Cpllector·Emitter Voltage VeEO 35 40 20 Vde
Collector·Emitter Voltage VeER 50 50 - Vde
Collector·Ba•• Voltage VeB 50 60 30 Vde Tccanvel1incheslomitlimetersmulliplybyZ5.4.
AIIJEOEC TO·39 dimensions and notl?S apply.
Emitter·Base Voltage VEB 5.0 5.0 5.0 Vde
Collector Current - Continuous Ie 600 600 600 mAde
rFr-m-I~
Total Device Dissipation@TA==2SoC Po 0.6 0.6 0.6 Watt
2N1991 °·JJ5~
Derate above 250 e 4.0 4.0 4.8 mW/oC
Total Device Dissipation@Te= 250 e
Derate above 25°C

@TC=I000C
Po 2.0
1.0
13.3
2.0
1.0
13.3
2.0
1.0
16
Watts
Watt
mW/oC
T
Q T
O."O
"""
Operating Junction Temperature Range
Storage Temperature Range
TJ
T.tg
175
-65 to +200
175 150
-65 to
°c
°c
LIT 1f IT
o.ols--lLo.029
+150 iilil9 ·11· ._'y
Wel!lht '" 1.15 gram
',,,",,,","_"m;ll'm._,,,,,,,,b,25A.
Alt JEDECTO·5dimension$3nd notes apply.
~ 0&Sll //
450T.P.O.O
Characteristic Symbol 2N1131,A 2N1991 Unit
CASE 31 (1) --.L
Thermal Resistance, Junction to Case 8Je 75 62.5 °elW TO·S
°e/w Pin 1. Emiller
Thermal Resistance, Junction to Ambient 8JA 250 208 2. BaSB
1 Collector
*Indicates JEOeC Registered Data.
FIGURE 1 - SWITCHING TIME TEST CIRCUIT - 2N1131A

CONOITIONS:
Vp 12~r
SKL
MODEL
--u- " fl.')
ATTENUATOR
Zo = 170 Ohm.
VCC = -15 Volt.
VBB = 1.5 Volts
Vp = -7.5 Volts
Pulse Width = 150 n.
503 1.0 k ~ 90% -J.o".....-----t"'~

1.0 k
0.01 ~F 0.01 ~F
150
I
50
+-:~
" "/' -
'TE'i<T'RO NI X
517·A
-T VBB VCC
T + 170 Ohms
Termination
L.
2-162
2N1131, 2N1131A, 2N1991 (continued)
*ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage( 1) VCEO(sus) Vdc
IIc = 100 mAde, IB = 0) 2N1131 35 -
2N1131A 40 -
2N1991 20 -
Collector-Emitter Sustaining Voltage(l) VCER(sus) 50 - Vde
IIc = 100 mAde, RBE';; 10 ohms) 2N1131,2N1131A
IIc = 100 /lAde, IE = 0) 2N1131A 60 -
IIc = 1.0 mAde, IE = 0) 2N1991 30 -
Emitter-Base Breakdown Voltage BVEBO 5_0 - Vde
liE = 1_0 mAde, IC = 0) 2Nl131A
(VCB = 30 Vde, IE = 0) 2N1131 - 1.0
(VCB = 30 Vde, IE = 0, T A = +1500 C) 2Nl131 - 100
(VCB = 50 Vdc, IE = 0) 2Nl131 - 100
(VCB = 45 Vde, IE = 0) 2N1131A - 0.5
(VCB = 45 Vde, IE = 0, TA = +150o C) 2Nl131A - 50
(VCB = 10 Vde, IE = 0) 2N1991 - 5.0
(VCB = 10 Vde, IE = 0, TA = +150o C) 2N1991 - 200
Emitter Cutoff Current lEBO /lAdc
(VSE = 2.0 Vde, IC = 0) 2Nl131 - 100
(VSE = 5.0 Vde, IC = 0) 2N1131A - 100
(VBE = 1.0 Vde, IC = 0) 2N1991 - 200
ON CHARACTERISTICS
IIc = 5.0 mAdc, VCE = 10 Vdc) 2Nl131,2Nl131A 15 -
IIc = 30 mAde, VCE = 10 Vde) 2N1991 15 -
IIc = 150 mAde, VCE = 10 Vde) 2Nl131,2Nl131A 20 45
2N1991 15 60
Collector-Emitter Saturation Voltage VCE(sat) - 1.5 Vde
IIc = 150 mAde, IS = 15 mAdc)
Base-Emitter Saturation Voltage VBElsa!) Vdc
IIc = 150 mAde, IB = 15 mAdc) 2N1131,2Nl131A - 1.3
2N1991 - 1.5
Current-Gain-Sandwidth Produetl2) IT MHz
IIc = 50 mAde, VCE = 10 Vde, 1= 20 MHz) 2Nl131,2N1131A 50 -
2N1991 40 -
(VCS = 10 Vde, IE = 0, I = 140 kHz) 2N1131,2N1991 - 45
(VCS = 10 Vde, IE = 0, I = 1.0 MHz) 2Nl131A - 30
I nput Capacitance Cib pF
(VES = 0.5 Vde, Ie= 0, I = 140 kHz) 2N1131 - 80
IVEe = 0.5 Vde, IC = 0, I = 1.0 MHz) 2N1131A - 80
I nput Impedance hib ohms
(lC = 1.0 mAdc, VCE = 5 .. 0 Vdc, I
= 1.0 kHz) 2Nl131,2N1131A 25 35
(lC = 5.0 mAde, VCE = 10 Vdc, I = 1.0 kHz) 2N1131,2N1131A - 10
Voltage Feedback Ratio hrb X 10"4
(lC = 1.0 mAde, VCE = 5.0 Vde, f= 1.0 kHz) 2Nl131,2N1131A - 8.0
IIc = 5.0 mAde, VCE = 10 Vde, I = 1.0 kHz) 2Nl131,2Nl131A - 8.0
(lC = 1.0 mAde, VCE = 5.0 Vde, I= 1.0 kHz) 2Nl131,2Nl131A 15 50
IIC = 5.0 mAde, VCE = 10 Vdc, I = 1.0 kHz) 2N1131,2N1131A 20 -
Output Admittance hob IJ.mhos
(lC = 1.0 mAde, VCE = 5.0 Vde, I = 1.0 kHz) 2N1131,2N1131A - 1.0
(lC = 5.0 mAde, VCE = 10 Vdc, I = 1.0 kHz) 2N1131,2N1131A - 5.0
SWITCHING CHARACTERISTICS IFigure 1)

Turn-On Time 2N1131A
Turn-Ofl Time 2N1131A

(1 )Pulse Test: Pulse Width":;; 300 p,s, Duty Cycle ~ 2.0%.
(21fT is defined as the frequency at which Ihfel extrapolates to unity.
2-163
2N 1132 ,A (SILICON)
For Specifications, See 2N722 Data
2N 1141
thru 2N (GERMANIUM)1143
2Nl142 JAN AVAILABLE
2N1195
PNP germanium mesa transistors for amplifier,

driver, oscillator and doubler applications.
CASE 31
(TO-5)
Collector connected to C8se
MAXIMUM RATINGS

Emitter-Base Voltage VEB 1.0 0.7 0.5 1.0 Vdc
Collector Current-Continuous IC 100 100 100 40 mAdc

Base Current IB 50 50 50 - mAdc
Emitter Current-Continuous IE 100 100 100 - mAdc
Total Device Dissipation @ T A =25°C PD 300 300 300 - mW

Derate above 25°C 4.0 4.0 4.0 - mw;oC
Total Device Dissipation @ TC =25°C PD 750 750 750 - mW

Derate above 25°C 10 10 10 - mW;oC
Collector Dissipation @ T A =25°C Pc - - - 225 mW

Derate above 25°C - - - 3.0 mW;oC

Temperature Range T J' Tstg -65 to +100 °c
2-164
2Nl141-2Nl143, 2Nl195 (continued)
TRANSISTOR SELECTION CHART
Typical! 00 MHz Noise Figure Minimum h,.

Minimum BVclO @ VCE = -10Vdc.IE = lmAdc @Ic = -10mAdc. VC& =
TYPE @Ic = -10011 Adc.IE = 0 Rs= 7SQ -10Vdc. f = 100MHz
35 Vdc 30Vdc 25 Vdc 4.0 db 4.5 db 5.0 db 12 db 10 db 8 db
2N1141 Y' Y' Y'

2N1142 Y' Y' Y'
2N1143 Y' Y' Y'
2N1195 Y' Y' Y'
Cha racteristic
OFF CHARACTERISTICS
(IC = 100 /lAde, IE = 0) 2N1141 35 45 -
2N1142 30 45 -
2N1143 25 45 -
2N1195 30 45 -
(IE ; 100 fJ.Adc , IC = 0) 2N1141 1.0 1.3 -
2N1142 0.7 1.3 -
2N1143 0.5 1.3 -
2N1195 1.0 1.3 -
Collector Cutoff Current I CBO fJ.Adc
(VCB = 15 Vdc, IE = 0) - 0.5 5.0
(VCB = 20 Vdc, IE = 0) - 0.5 5.0
Emitter Cutoff Current lEBO fJ.Adc
(VBE = 0.5 Vdc, IC = 0) - 0.2 -
ON CHARACTERISTICS
(IC = 10 mAde, VCE = 10 Vde) 2N1141, 2N1142, 2N1l43 10 25 -
(IC = 10 mAde, VCE = 10 Vde) 2N1195 - 25 -
VCE(sat)
(IC = 50 mAde, IB = 10 mAde) 2N1141, 2N1l42, 2N1143 - 0.185 2.0
(IC = 50 mAde, IB = 10 mAde) 2N1195 - 0.185 -
2-165
2Nl141.2N1143, 2N1195 (continued)
Cha racteristic
SMALLoSlGNAL CHARACTERISTICS
Common-Base Cutoff Frequency
nc ~b MHz
= 10 mAdc, VCE = 10 Vdc) All Types - 1000 -
Collector Transition Capacitance CTC pF
(VCB = 10 Vdc, IE =0, f = 1 MHz) 2N1141 - 1.1 1.5
Emitter Transition CapaCitance

2N1142; 2N1143, 2N1195 - 1.1 -
CTe pF
(VBE = 0.5 Vdc, IC = 0, f = 1 MHz) All Types - 2.5 -
nc = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) hfe
2N1141,2N1195 12 18 - -
2N1142 10 18 -
2N1143 8.0 18 -
(Ic = 10 mAdc, VCB = 10 Vdc, f = 1 kHz)
hfb -
2N1141, 2N1142, 2N1143
2N1195
-
0.96
0.98
0.98
-
0.995
Output Admittance hob pmhos
-- -
2N1141, 2N1142, 2N1143 10
2N1195 10 20
(IC = 10 mAdc, VCB = 10 Vdc, f = 1 kHz)
2N1141, 2N1142, 2N1143
2N1195
-
-
3.6
3.6
-
10
Voltage Feedback Ratio
hrb -
2N1141,2N1142,2N1143 - 0.0013 -
2N1195 - 0.0013 0.003
Collector-Base Time Constant r' C ps
(IE = 3 mAdc, VCB = 10 Vdc, f =30 MHz) b c
All Types - 23 -
Extrinsic Base Resistance r' Ohms
(IC = 10 mAdc, VCE = 10 Vdc, f =250 MHz) b
--
2N1141 65 70
2N1142 80 -
2N1143 - 110 -
2N1195 - 65 80
Collector Series Resistance r' Ohms
c
(IE = 10 mAdc, VCB = 10 Vdc) All Types - 2.0 -
Noise Figure NF dB
(IE = 0.8 mAde, VCE = 5 Vdc, RS = 300 ohms, f =4. 5 MHz) ,
-- -
2N1141,2N1195 ' 3.0
--
2N1142 3.5
2N1143 - 4.0
(IE = 1 mAdc, VCE = 10 Vdc, RS = 75 ohms, f = 100 MHz)
2N1141
2N1142,2N1195
-- 4.0
4.5 --
2N1143 - 5.0 -
(IE = 1 mAdc, VCE = 10 Vdc, RS = 50 ohms, f =200 MHz)
2N1141
2N1142,2N1195
-- 5.5
6.0
-
--
2N1143 - 6.5
Oscillator Efficiency %
71
(VCE = 20 Vdc, IC = 10 mAdc, f =400 MHz)
-- -
2N1141 20
2N1142 18 -
2N1143
2N1195
-- 12
18
-
-
2-166
2Nl141-2Nl143, 2Nl195 (continued)
PllWER·TEMPEUlUlE COLLECTOR CHARACTERISncs.

OWnNGCUm COMMIINEMmEI
750 r----~-..,-_r--,
1 III I
-
~9
50 TA=25°C -
45 - , 0.9
-40
!!Z: 35 i Y
W
0.8
0.7
g§30
V 0.6/
-300 mW ,_ -
B 25
@i
~ 20
V ...... -,0.5
.~
, ..],,0:4
8 15 ~
150 ,.g1O Vo.i) ..
.....t"'"u·V I t -0-
·1~O.lmA .....i. .O'j,.
o
25 50 75 100 o 10 15 20 25 30 40 50
TA,AMBIENT TEMPERATURE I"C) V,. COLLECTOR·EMlmR VOLTAGE (Vdc)
BASt CHAIACTElISTICS, COllECTOR CUTOFF CURREIIT

CO. . EMmEl YlISVSJUNCTION TEMPERATURE
20 -v~. 15Vdc
100 1-~f--+--+--h..-m'T""i
"U
10 /
~ 5.0
/
i
=>
'-'
2.0
1.0
,I
0.5
~
'-' 0.2 /
§"" 0.1
;j 0.05
0
'-' /
jO.02
/
0.01
O~~~LL~ ....~~~ 0.005
0.40 0.45 0.50 0.55 0.60 0.65 0.70 -75 -50 -25 25 50 75 100
v•• BASE·EMITTER VOLTAGE (vile) T" JUNCTION TEMPERATURE rC)
COLLECTOR SAlUUnON COllECTOR INPUT AND OUTPUT CAPACITANCE

CHAUCfERlSTICS versus VOLTAGE
20
100 t-::+-~:-:-t--t--+--.Jfr-+---l TA ~'25"C
f = 100 kHz
C,.
2Ot---t---t-:HC--t--t-+-+--..1 C.
O~~~~~~~~~-J
o 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 I
0.1 0.2 0.5 1.0 2 5 10 20 50
V_" COLLECTOR SATURATION VOLTAGE (Vile) REVERSE BIAS VOLTAGE (VOLTS)
2~167
2Nl141·2Nl143, 2Nl195 (continued)
PDW£IIAIN ANI NOISE IIGUII£ PDW£IIWN AIID IIOISE FIGURE

lInUS CQU£CTOI-BASE VIIlTAGE _ EMITTER CUIRENT
28 10 28 10
26
V
POWER GAIN vs. v.. -
1.= 10 mAde
26
/
- POWER GAIN vs. I.
V.. =-IOVde
r--
- --
iii' iii'
6~
3!
,;; 24 1\
"
iil
c;:
i:iI I-
f---
NOISE FIGURE vs. V..
1.= 10mAdc
4 ~
az i22 NOI IE FIGURE vs. I.
V.. =-IOVdc
I 70 MC NEUTRAliZED & MATCHED 20
T. = 25'C 70 MC N~UTRALIZiD & MATCHED
I I I I o o
T.=25 C I
o o
o
o 4 6 8 W ~ M ~ 6 8 W· 12 14 16
V... COLLECTOR BASE VOLTAGE (Vdc) I•• EMITTER CURRENT (mAde)
COM. . EMlmR POWER GAIN, ~ft, AND NOISE FIGURE

40
---" "
YeISllS FREQUENCY
r-....
...... r-,
......
V
r-.......Pg
V,,_-IOVdc
le=-IOmAde
T.=25'C
r--- NOISE FIGURE

rr"~~
f'oo
10 20 50
II
100 200 500 1000
o
FREQUENCY (I MHz)
SMAlL SIGNAl CDRIEIIT GAIN 111ft) NaLIZEUFt

III'SIIS COLLECTOR CUIRENT . . AMBIENT TEMPERATURE
19 1.2
Vco-- WVde
h" NOR~AlIZED
TOI 25' C ~
5Vde_
~ 17 Va Va=-lOVdc
/
~
l.l le= -IOmAdc
01: ....... V
~
i
u
15
13
j '" ~ !§
~
I
1.0
/
V
~ f V,,= -2Vde /
,
In
oil 11
j r\ ..1 0.9
g V
i3i
.J 9 I . ).
f= lOOMB,- I - - - 0.8 /
T.=~5'C
7 0.7
o 10 12 14 16 -75 -50 -25 .25 50 75 100
Ie. COLLECTOR CURRENT (mAde) T•• AMBIENT TEMPERATURE ('C)
2-168
2N 1162 thru 2N 1167
(GERMANIUM)
2N1162A thru 2Nl167A
PNP germanium power transistors for switching and

amplifier applications in high reliability equipment.
CASE 11A CASE 4-04

(TO-3 modified) (TO-41)
2N1162,A 2N1163, A
2N1164, A 2N1165, A
2N1166, A 2N1167, A
MAXIMUM RATINGS
Apply also to standard, non-A series
2N1162A 2N1164A 2N1166A

Rating Symbol 2N1163A
Units
2N1165A 2N1167A
Total Device Dissipation @ 25°C PD 106 Watts

Derate above 25°C 1. 25 W;OC
Operating and Storage °c

TJ , T -65 to +110
Junction Temperature Range stg
2-169
2N 1162 thru 2N 1167 (continued)
GROUP A ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Collector Cutoff Current ICBOI rnA
(V CB = VCB(maxl, I,,' = 0) -- ,3.0 15

(V CB = 2 V, IE = 0) -- 125 225 /lA
(V CB = 15 V, IE = 0, TC = 90°C) 2N1162A-3A' - 10 20 rnA
-- 20 rnA
..
(V CB = 30 V, IE = 0, TC = 90°C) 2N1164A-7A' 10
Collector- Emitter Breakdown Voltage** BV CES Vdc

(IC = 500 mA, V EB = 0) 2N1162A-3A' 35 - -
2NI164A-5A* 60 - -
2N1166A-7A* 75 - -
Emitter Cutoff Current rnA
lEBO
(V EB = 12 V, IC = 0) - 0.5 1.2
DC Forward Current Gain --

(V CE = I V, IC = 25 A) hFEI 15 25 -
(VCE = 2 V, IC = 5 A) hFE - 65 125
Collector- Emitter Saturation Voltage volts

V CE(sat)
(IC = 25 A, IB = I. 6 AI - 0.3 0.8
Base-Emitter Saturation Voltage volts

VBE(sat)
(IC = 25 A, IB = 1. 6 A) - 0.7 1.7
Common Emitter-Cutoff Frequency f kHz

(V CE = 2 V, IC = 2 A)
ae -- 4.0 -
·CharactenstIcs apply also to correspondmg, non-A type numbers
**Sweep Method: 1/2 cycle sine wave, 60 Hz
SWITCHING CHARACTERISTICS (Typical)
Saturated Collector Pulsed Drive Base Current Response times in /IS

Current On Off td +t, t5 tf
5 amp 330 rnA 100 mA 11 5.0 17
10 amp 660 rnA 200 rnA 15 4.0 20
25 amp 1650 rnA 500 mA 19 3.0 18
FIGURE 1 - POWER TEMPERATURE DERATING CURVE

120
en
I-- 100 r--.... 1" 1" 1" 1"
I--
f"""'..
~ r--.... r--...... (he = 0.8°C/W, MAX
z
0
;=
80 ......
co:: r-.......
c..
en 60 r-....... ......
en
C r--.... r--....
0::
L.U 40 "-
==
0
c..
f'. r--....
0 20 r-.....
c..
r-...... r-.......
o r-.......
25 50 75 100 125
Te , CASE TEMPERATURE (OC)
2-170
2Nl162 thru 2Nl167 (continued)
FIGURE 2 - ACTIVE REGION SAFE OPERATING AREAS 30

2S0 I-'S
20
\ r-. r-...... ...... lyORLtSS-
"
The active region safe operating Sms'"
area curves indicate Ic·VeE limits 10
to be observed in order to avoid
secondary breakdown. (Secondary
breakdown is independent of tem-
~ S,O Ims
perature and duty cycle.) These "" 3,0 "-....... \
curves do not define operation in
the avalanche region. To insure
operation below the maximum
I 2,0
dc f".. r-...
"\.y
'\
junction temperature, power de-
rating must be observed for both
~
::j
1.0
steady state and pulse conditions. 8 O,S

.!l 0,4
0,3
0,2 TO SOV,20rnA \
~rr~s~~KR~i~So:~\IED
0.1
o 10 20 30
- r-- -\ 40
VeE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
30 30
2S01-'~_ 20 2S0l-'S -
20
~ORLESS
s~r ~ ~"< ~ ~
~~
..... OR LESS
10
\ 10
Sms
~ S.O
, i
Ims Ims
S,O
"" "- /' ..., \ ~
SO~I-'S
~B 3,0
2,0
500 p.S ~\
I 3,0
2,0 I"'" """' ~~\
A ~
"'"
dC,../"
~ 1.0
~
dC
1.0
~ S
8 O,S
.!l 0,4 ~ 0.5
04
.......... _\.
-
Q.3 '\
0.3
\
-
TO 80 V, 20 rnA TO 90 V, 20 mA
0,2 0,2 WITH BACK BIAS APPLIED
~~~s~~~~i~O:~\IED-
40
~70 0.1 0 10 20
IPULSE CURVES O~LYI
30 40 SO 60 70
r-r-
~ 90
80
10 20 30 so 60
VeE, COLLECTOR·EMITTER VOLTAGE IVOLTSi VeE, COLLECTOR·EMITTER VOLTAGE !VOLTSI
LARGE SIGNAL CHARACTERISTICS
FIGURE 3- TRANSCONDUCTANCE FIGURE 4 -INPUT ADMITTANCE

30 2000
VeE~ I V ~~
I
VeE~IV
l/': ~
20
~ 1000
A V
10 ~~ I SOO /
/
/ /
/
/
200
TJ ~ lOO'C /V /
/ I II /
/ / V / TJ ~ -SS'C
TJ~ 100'C / / TJ ~ -sS'C
TJ 2S'C
if / / 0
'"/
1.1
0 I
II / TJ ~ 2S'C
/ / /
I.0 / 0
II
J 1/
I
S
0,S II
I I I
0,3 II I 0,4 2 II
o 0,2 0.6 0,8 1.0 0,2 0,4 0.6 0,8 1.0
VIE, BASE·EMITTER VOLTAGE lVOLTSI V.., BASE·EMITTER VOLTAGE lVOLTSI
2-171
F1BUR£ 5- CURR£NT BAlN F10UR£ &- SATURAnON MBION

200 30
l"- I"- t'--,

IV~EI~IV
,ll.
1.6 1.4 1.2 1.0
TJUt 25
v:V
~
----
I--"
....... .. 0.8
I~V V
100
TJ 25'C
0.6
... /
~ ~V .....
V
- r- TJ--55'C V
~
/
- 0.4
~
/
, ~t-- V
30 ~ / I, - 0.2 AMP
1\ If V V ~-
~/
20
It
Y
10
0.3 0.5 1.0 2.0 3.0 5.0 10 20
\
30 0.2 0.4 0.6

r 'f
0.8
25
1.0
Ie, COLLECTOR CURRENT lAMP) VOE, COLLECTOR.fM1TTER VOLTAGE (VOLTS)
2-172
2N1175
FOR SPECIFICATIONS, SEE 2N1413-2N1415 DATA.
2N 1185 thru 2N1188(GERMANIUM)
PNP germanium transistors for high-gain audio ampli-

fier and switching applications.
CASE 31 (1)
(TO-5)
All leads isolated from case
MAXIMUM RATINGS

2N1l85 45
2N1l86 -2N1l88 60

2N1l85 30
2N1186-2N1188 45
Collector Current * IC 500* mAdc

(Continuous)
Storage and Operating Temperature T stg' T J -65 to +100 °c
Collector Dissipation in, Ambient PD 200 mW

(Derate 2.67 mW/oC above 25°C)
Thermal Resistance (JJA 0.375 °C/mW

Junction to Ambient
Thermal Resistance (JJC 0.250 °C/mW

(Junction to Case)
*Limited by power dissipation
2-173
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
Collector-Base Cutoff Current ICBO /lAdc

(V CB = 30 V, IE = 0) 2N1185 - 3.0 10
(VCB = 45 V, IE = 0) 2N1186 thru 2N1188 - 5.0 10
(V CB = 60 V, IE = 0) 2N1186 thru 2N1188 - - 50
(VCB=10V,IE=0,TA=+71°C) All Types - 55 100
Emitter-Base Cutoff Current lEBO /lAdc

(V EB = 30 V, IC = 0) - 3.0 10
Collector-Emitter Leakage Current ICER /lAdc

(VCE = 30 V, RBE = 10 K) 2N1185 - - 600
(VCE = 45 V, RBE = 10 K) 2N1186 thru 2N1188 - - 600
Collector-Emitter Punch-Thru Voltage Vpt Vdc

(V F = 1. 0 V, 2N1185 45 - -
VTVM Impedance ~lMohm)
2N1186 thru 2N1188 60 - -
(V CB = 6 V, IE = 0) - 10 25
Noise Figure NF dB
(VCE = 4.5 V, IE = 0.5 rnA, - 5.0 15
Rg = 1 K, f = 1 kHz, <1f = 1 Hz)
Small Signal Current Gain Cutoff fab MHz

Frequency
(V CB = 6 V, IE = 1 rnA) 2N1185 1. 75 3.0 -
2N1186 0.75 1.5 -
2N1187 1.0 2.0 -
2N1188 1. 25 2.5 -
(V CB = 6 V, IE = 1 rnA, f = 1 kHz) 2N1185 27 35 37
2N1186 27 31 37
2N1187 27 34 37
2N1188 27 35 37
Output Admittance hob /lmho

(V CB = 6 V, IE = 1 rnA, f = 1 kHz) 2N1185 0.2 0.50 0.7
2N1186 0.2 0.65 1.0
2N1187 0.2 0.60 0.9
2N1188 0.2 0.55 0.8

(V CE = 6 V, IE = 1 rnA, f ~ 1 kHz) 2N1185 190 260 400
2N1186 30 49 70
2N1187 50 80 120
2N1188 100 130 225
DC Current Transfer Ratio

hFE -
(V CE = 1. 0 V, Ie = 10 mAl 2N1185 130 170 -
2N1186 33 44 -
2N1187 45 75 -
2N1188 80 115 -
2-174
Characteristics Symbol Min Typ Max Unit

Base-Emitter Input Voltage V BE Vdc
(V CE = 1.0 V, IC = 10 rnA) 2Nl185
2N1186
-- 0.215
0.245
0.240
0.270
2N1187 - 0.235 0.260
2N1188 - 0.225 0.250
VCE (sat)
(Ic = 50 rnA, IB = 1. 0 rnA) 2N1185 - 0.175 0.250
(Ic = 50 rnA, IB = 2.5 rnA) 2N1186 - 0.175 0.250
(Ic = 50 rnA, IB = 1. 67 mAl
(IC = 50 1pA, IB = 1.25 rnA)
2N1l87
2N1l88
-- 0.175
0.175
0.250
0.250

V CE(sat)
(Ic = 100 rnA, IB = 2. 0 mAl 2N1l85 - 0.250 0.500
(Ic = 100 rnA, IB = 5.0 rnA) 2N1l86 - 0.250 0.500
(Ic = 100 rnA, IB = 3.33 rnA) 2N1l87 - 0.250 0.500
(IC = 100 rnA, IB = 2.5 rnA) 2N1188 - 0.250 0.500
SMALL SIGNAL CURRENT GAIN(h.. ) versus TEMPERATURE POWER·TEMPERATURE DERATING CURVE

(Typical All Types) (For All Types)
600 22 0
I I I I
400 ~ 200 "'i,
"""-,
u _ 180 9JC = 0.25°C/mW(max)
°
'"
N
200 VeE = 1 VOLT 3~ ~
160
!;;:
/ IE = 50 MA
~
V ~ 140 I""""'"
~ 100 ~
,
.c
80 - 12
I'\..
...~
15
60
40
:
ilic;
10
oI---
801---
9J. = 0.3750C/mW(max)-J ......
<> I- VeE = 6 VOLTS ......... I'\..
"" "" 60
~
20
1,=1 MA
~ 40 1'0..' ~
I oI .;
... 20 "
o
-80 -60 -40 --20 20 40 60
TJ • JUNCTION TEMPERATURE (OC)
80 100 120
0
0 10 20 30 40
TEMPERATURE (OC)
50 60 70 80 90 '"
100
OUTPUT CURRENT versus BASE DRIVE VOLTAGE DC CURRENT TRANSFER RATIO versus COLLECTOR CURRENT
180
o 160 "-
~
~ 140 l'.. VeE = 1 VOLT
""~ 120
2N1l88 ,-!N1l85
z
~ 100
...... 1'-0.,
~
1' ....
--r-r--
-....-
....
- -,..-. ""'" - r- -
!i: 80
~ 2N1l87
g; 60
<.> ...
g
j
40
20
o
2N1l86
'- '- -. == 1-. ~-
o 20 40 60 80 100 120 140 160 180 200
V... BASE-EMInER VOLTAGE (VOLTS) Ie. COLLECTOR CURRENT (MILLIAMPERES)
2-175
2Nl189 2Nl190(GERMANIUM)
PNPgermanium transistors for high-gain audio am-

plifier and switching applications.·
CASE31{l) ' \
(TO·5)
All leads isolated
MAXIMUM RATINGS

Collector Current IC 500*· mAde

(Continuous)
Junction, Storage Temperature T J , Tstg -65 to +100 °c
Collector Dissipation, Ambient PD 200 mW

(Derate 2.67 mW1° C above 25° C)
Thermal Resistance 9JA 0.375 °C/mW

(Junction to Ambient)
Thermal Resistance 0.250 °C/mW

(Junction to Case) ~C
·Limited by pawerdissipation.
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted

Characteristic Symbol Min TfP Mal Unit
Collector-Base Cutoff Current I CBO /lAdc
(VCB = 30 Vdc, IE = 0) -- 3.0 10
(VCB = 45 Vdc, IE = 0) -55 50
(V CB= 10 Vdc, IE = 0, TA = + 7l oC) - 100

(VEB = 15 Vdc, IC = 0) - 3.0 10
Collector-Emitter Leakage Current ICER .uAdc

(VCE = 30 Vdc, RBE = 10K) - - 600

(VEB = 1 Vdc, VTVM Impedance ~ 1 M ohm 45 - -
Output Capacitance ", Cob pF
(VCB ;: 6 Vdc, IE = 0, f = 1 MHz) - 12.0 25
Noise Figure NF dB
(VCE = 4.5 Vdc' IE

Rg = 1 K, f = 1 kHz
= 0.5 mAdc
.4f = 1 Hz)
- 5.0 15
Small-Signal Current-Gain Cutoff Frequency fab MHz

(V CB = 6 Vdc, IE:; ImAdc)
2N1l89 1.75 3.5 -
2N1l90 2.25 4.5 -
2-176
2N 1189, 2N 1190 (continued)
Characteristic Symbol Min TJII Mu Unit

(VCB = 6 Vde, IE = 1 mAde, f = 1 kHz) 27 31 37

(VCB = 6 Vde, IE = 1 mAde, f =1 kHz) 0.1 - 0.9

(VCE = 6 Vde, IE = 1 mAde, f = 1 kHz)
2N1189 75 120 175
2N1190 125 190 300
DC Current Transfer Ratio hFE -

(V CE = 1.0 Vde, IE = 10 mAde)
2N1189 60 115 -
2N1190 100 170 -
Base-Emitter Drive Voltage VBE Vde
(VCE = 1.0 Vde, IE = 10 mAde)
2N1l89 - 0.24 0.26
2N1l90 - 0.22 0.25
Colleetor- Emitter Saturation Voltage VCE Vde

(sat)
(Ic = 50 mAde, IB = 1.5 mAl 2N1189 - O. 14 0.22
(IC = 50 mAde, IB = 1.0 mAl 2N1190 - O. 15 0.22
(IC = 100 mAde, IB = 3.0 mAl 2N1l89 - 0.17 0.3
(IC = 100 mAde, IB = 2.0 mAl 2N1l90 - O. 19 0.3
SMALL SIGNAL CURRENT GAIN(h.. ) versus TEMPERATURE POWER·TEMPERATURE DERATING CURVE

(Typical All Types) (For All Types)
600 220
I I
400
~
~
200
;: 180
.... I"\, 8,c = 0.25°C!mW(max)
.......
...~
.
200
100
/
Vc"
IE
= 1 VOLT
= 50 MA ,...,.V :::
~
z
0
160
140
........ ",
......
I"\.
.=
~
80 120
" """
~
...
0
z
60
~
c;
100 80. = 0.375°C!mW(max)..J
40 80 ........
ti - Vo" = 6 VOLTS '"~
'"
It I" =1 MA 60
I"...
20 0 40
"- ~
a
-80 -60 -AO -20
I Ia 20 40 60 80 100 120
0..
" 20
10 20 30 40 50 60 70 80 90 '"100
T,. JUNCTION TEMPERATURE (OC) TEMPERATURE (0C)
OUTPUT CURRENT versus BASE DRIVE VOLTAGE DC CURRENT TRANSFER RATIO versus COLLECTOR CURRENT
~ 250 140
0
VeE; 1 V
~ ~ 120
..
::i
200
2L90j '/2~1189
.
'"
100
.....
' ..... VeE = 1V
~
...
~
150
*... "
z:
..:
80 ~
...........
r.......
----
'"
::>
II ~
is
..........
........... ~O
---
<.) 100 60
_2N1189
'"'"::>
~/
'"
~ <.) 40
~
o
50
<.)
0
~ Y'
<.) 0 20
it
~
o o
o 0.2 0.4 0.6 0.8 o 20 40 60 80 100 120 140 160 180 200
V... BASE-EMITTER VOLTAGE (VOLTS) Ie, COLLECTOR CURRENT (MILLIAMPERES)
2-177
2N 1191 thru 2N 1194 (GERMANIUM)
PNPgermanium transistors for high-gain audio am-

plifier and switching applications.
All leads isolated
MAXIMUM RATINGS

(Continuous)
Storage and. Operating Temperature -65 to +100 DC

T stg ' T J
Collector Dissipation in,Ambient PD 200 mW

(Derate 2.67 mW rC above 25°C)
Thermal Resistance 9JA 0.375 °C/mW

Thermal Resistance 9JC 0.250 °C/mW

(Junction t() Case)
Collector-Base Cutoff Current ICBO

(V CB = 25 V, IE = 0) - - 15 /lAdc
(V CB = l.0 V, IE = 0) - 2.0 - /lAdc
Emitter-Base Cutoff C\!rrent lEBO

(VEB '" 25 V, IC = 0) - - 15 /lAdc
Collector -Emitter Leakage Current ICER

(V CB '" 25 V, RBE '" 10 K) - - 600 /lAdc
Output Capacitance Cob

(VCE'" 6 V, IE'" l. 0 rnA) - 20 - pF
Noise Figure NF
(V CE = 4.5 V, IE = 0.5 rnA, - 10 - dB
f = 1 kHz,R s = 100 ohms)
Small Signal Current Gain Cutoff Frequency fab

(VCB = 6 V, IE'" L(} rnA) 2N1l91 - 1.5 - MHz
2N1l92 - 2.0 -
2N1l93 - 2.5 -
2N1l94 - 3.0 -
2-178
2Nl191 thru 2Nl194 (continued)
Characteristic Symbol Min Typ Mu Unit
Small Signal Current Gain hfe
(VCE = 6 V, IE = 1.0 rnA, 2N1l91 30 40 70 -
2N1l92 50 75 125
f = 1 kHz) 2N1l93 100 160 250
2N1l94 190 280 500
DC Current Gain hFE

(V CE =lV,IC =10mA) 2N1l91 20 - 80 -
2N1l92 40 - 135
2N1l93 70 - 300
2N1l94 125 - 600
Small Signal Power Gain Ge

(VCE = 6 V, IE = 1. 0 rnA, 2N1l91 - 42 - dB
f = 1 kHz, matched) 2N1l92 - 44 -
2N1l93 - 46 -
2N1l94 - 48 -
Base-Emitter Input Voltage V BE
(VCE =6V, IC= 1.0 rnA) - - 0.3 Vdc
OUTPUT CURRENT versus BASE DRIVE VOLTAGE DC CURRENT TRANSFER RATIO

v,rsus CURRENT COLLECTOR
180
160
\
. 140
~, Veo = 1 VOLT
S r,
~
~
~
120
100
"'~1193 -, <2N1194
~ i'- r-..... ......... ,
--
80
I'-.
........ ...
~
"co
" 60
-I-
-..-
l/N1192
-
..........
- .......... "
~
.- .- -- - --- "--
j ........ 1'- ..... ....
40
2N1191/ ro-
20
o
0.2 0.4 0.6 0.8 o 20 40 60 80 100 120 140 160 180 200
V." BASE -EMInER VOLTAGE (VOLTS) Ie, COLLECTOR CURRENT (M ILLIAMPERES)
SMALL SIGNAL CURRENT GAIN
versus TEMPERATURE POWER-TEMPERATURE DERATING CURVE
(For All Types) (For All Types)
600 220
400
200
Y
200
~
180
160
" '\ \
(he;;:;: O.25°C/mW (max)
=
~
VrF: 1 VOLT
I E =50MA
V I'\. [\
°"
~
/ /
.~
~
140
--
N
~ 100
"... z
120 8110 =0. 75°C/mW (rna,) ~ \
~
~
80
~ 100 1\
~ 60 i5
80
'\ \
~ '" V" _ 6 VOLTS
= ~
40 IF, 1 MA
~
60 I'\. \
1\.\
,
Q
0..
20 40
20
'\~
o o
-80 -60 -40 -20 20 40 60 80 100 120 o w ~ ~ ~ ~ ~ ro ~ ~ ~
T" JUNCTION TEMPERATURE (OC) TEMPERATURE (OC)
2Nl195 FOR SPECIFICATIONS, SEE 2N1l41 DATA.
2-179
2N 1204, A(GERMANIUM)
2N1494,A
2N1495 PNP germanium epitaxial mesa transistors for high-
2N 1496 speed, high-current switching in line and core driver
applications.
2N2096
2N2097
CA5E~
2N2099
2N2100
(TO.5~1 ~ CASE 25
2N1204.A 2N1494.A
2N1495 Collector 2N1496
2N2099 connected
2N2096
2N2100 2N2097
to case
MAXIMUM RATINGS

2N1204, 2N1204A, 2N1494, 2N1494A 20
2N2096, 2N2099 25
2N1495, 2N1496, 2N2097, 2N2100 40
Collector-Emitter Voltage VCEO Vdc
2N2096, 2N2099 12
2N1204, 2N1204A, 2N1494A 15
2N2097, 2N2100 20
2N1495, 2N1496 25
Collector - Emitter Voltage VCES Vdc

2N1204, 2N1204A, 2N1494, 2N1494A 20
2N2096, 2N2099 25
2N1495, 2N1496, 2N2097, 2N2100 40
Total Device Dissipation @ TC =25°C PD

All Types 750 mW
Total Device Dissipation @ T A = 25°C PD

TO-5 Case
2N1204. 2N1204A, 2N1495, 2N2099, 2N2100 300 mW
Case 25
2N1494, 2N1494A, 2N1496, 2N2096, 2N2097 500 mW
Operating Junction and TJ -65 to +100 °C

Storage Temperature Range T
stg
2-180
2N 1204,A SERIES (continued)

Characteristics Symbol Minimum Typical Maximum Unit
(IC =100 "Ade, IE =0) 2N1204, 2N1204A, 2N1494, 2N1494A
2N2096, 2N2099
20
25
40
- --
2N1495, 2N1496, 2N2097, 2N210Q 40 - -
BVCES Vde
(Ie = 100/.lAde, V BE '" 0) 2N1204. 2N1204A, 2N1494, 2N1494A
2N2096, 2N2099
20
25
40
- --
2N1495, 2N1496, 2N2097, 2N2100 40 - -
BVCEO Vde
(Ie'" 2 mAde, IS '" 0) 2N1204, 2N1204A, 2N1494, 2N1494A IS 25 -
(Ie =10 mAde,." =0) 2N2096, 2N2099 12 - -
--
2N2097, 2N2100 20 -
2N1495, 2NI496 25 -
(IE'" 1 mAde. Ie =0) 2N1204, 2N1204A, 2N1494 thru 21'<11496, 2N1494A 4.0 - -
(IE =10 mAde, Ie = 0) 2N2D90, 2N2097. 2N2099, 2N2100 4.0 - -
Collector Cutoff Current leBO "Ade
(VCS =5 Vde, IE =0) 2N1204, 2N1204A, 2N1494 thm 2N1496, 2N1494A - 0.4 7.0
(VCS =12 Vde, IE = 0) 2N2096, 2N2099 - - 12
(VCS =15 Vde, IE =0) 2N2097, 2N2100 - - 12
Emitter Cutoff Current "Ade
(V SE =0.5 Vdc, IC =0) 2N1494 thru 2N1496, 2NI494A
lEBO
- - 50
(V SE =1 Vdc, IC = 0)
DC Current Gain
2N2096, 2N2097, 2N2099, 2N2100 - 10 50
hFE
(Ie'"' 200 mAde, VCE = 0.5 Vdc) 2NI204A, 2N1494A, 2N1495, 2NI496 25 - -
(Ic '" 200 mAde, VCE = 1 Vdc) 2N2097, 2N2l00 30 70 -
(Ie =400 mAde, VCE = 1.5 Vde)· 2N1204, 2N1494, 2N2096, 2N2a99 15 35 -
2N2097, 2N2loo 20 SO -
(Ic =SO mAde, ." =2.5 mAde) 2N2097, 2N2100 -. - 0.3
(Ie = 200 mAde, IB '" 10 mAde) 2N1204, 2N1204A, 2N1494, 2N1494A
2N2097, 2N21oo
-- -- 0.4
0.5
2N2096, 2N2099 - - 0.6
(IC = 200 mAde, IB - 20 mAde) 2NI495, 2NI496 - - 0.3
(Ie = 400 mAde, Ia
= 25 mAde)·· 2N1204A, 2N1494A, 2N1495, 2N1496 - - 0.7
Sase-Emitter saturation Voltage Vde
VSE(sat)
(IC • 50 mAde, ." =2. 5 mAde) 2N2097, 2N2l00 - - 0.5
(le '" 200 mAde, IB '" 10 mAde) 2Nl204, 2Nl204A, 2N1494 thru 2N1496, 2N1494A 0,40 0.60 O. '12
2N2097, 2N2l00
2N2096, 2N2099
-- -
-
0.8
0.9
(V CB = 10 Vde, IE'" 0, [= 4 MHz) 2N1204, 2N1204A, 2Nl494 thru 2N1496, 2N1494A
2N2096, 2N2097, 2~099, 2N2100
-- 3.5
3.5
6.5
20
Input Capacitance Cft> pF
(V BE .. I Vde,Ie
= 0, ("" 4 MHz) All Types - 8.0 50
AC Current Gain hre
(IC =20 rnA, VCE = 10 V, ['" 100 MHz) 2Nl204, 2N1204A, 2N1494, 2~H94A 1.1 2.0 -
2N1495, 2N1496 1.5 - -
Rise Time (Figure 5) I , ns
--
2N20S7, 2N2l0D - 20
2N1204, 2N12a4A. 2N1494. 2N1494A, 2N2a96, 2N2a99 - 35
Minority Carrier storage Time Constant

2N1495, 2N1496 - - 55
Ts ns
(Figure 4) 2N12a4, 2N1204A, 2N1494. 2N1494A - 30 75
2N1495, 2N1496 - - 90
storage Time (Figure 6) Is ns
2N2097, 2N2l0a - - SO
2N2a96, 2N2a99 - - 70
Fall Time (Figure 6) ns
2N2097, 2N21aa 'r - - 40
2N2ag6, 2N2099 - - 60
·Pulse Test: Pulse width ~ 1 ms, Duty cycle ~ 6%
**Pulse Test: Pulse width :s; 5 ms, Duty crele :s:: 2%
2-181
2N1204,A SERIES (continued)
FIIIURE 1- 1YPICAL RISE AND FALL nME BEHAVIOR FIGURE 2- STORAGE nME VARlAnoIIS
30
Vee- IOV 1,,-1..
TJ - 2SOC
fJ.-IO " 1c~lIo« I..
j 20
1\ '" ......... ~
~
I 1\ t.andt,
V/
/ 10 20
I". BASE ClRIRENT!mAde)
50
\
I\.
"- ....... V
~
" !
I ..."..,
...".. ~
~
10
10 20 30 50 70 100 200 300 500
ioJ I ..............
.,..,... ......
......... i"""
10
Ie. COLLECTOR CURRENT (rnA) 1,,1 ... CIRCUIT ORIVE RATIO
FIGURE 3- TOTAL CONTROL CHARGE FIGURE 4 - CARRIER STORAGE TIME CONSTANT TEST CIRCUIT
3000 VOUT
I I + Vu
!
TO SCOPE
I - tJ=12So~
- lell,=IO " I, = I, = 20 mA
/
/ 1.5 K
IN277 135
l.I
10
,. , /
,/
I'
I -
O'S"F
JL
--I I-- 10,.s
40
100 • ADD SCOPE AND PROBE

1.0 3.0 5.0 7.0 10 30 50 CAPACITANCE TO C, FOR
CORRECT CALCULATION c, You,
I,. BASE CURRENT (mAdel OFT,(K',I.
'T,=--
I,
FIGURE 5 - RISE TIME TEST CIRCUIT FIGURE &- STORAGE AND FALL TIME TEST CIRCUIT
HI RELAY Ha RElAY V."
500
TEKTRONIX TYPE 517 250
-n
CRO OR EQUIVALENT
250
50 50
10V -SV -IOV
NOTE I: SCOPE IMPEDANCE SUFFICIENTLY HIGH SO THAT DOUBLING

OR HALVING ITS VALUE DOES NOT CHANGE THE READING.
SCOPE RISE TIME FAST ENOUGH SO THAT DOUBLING OR
-IOV -10 V HALVING ITS VALUE DOES NOT CHANGE THE READING.
2-182
2N 1204,A SERIES (continued)
FIGURE 7 - COLLECTOR-EMITTER SATURATION VOLTAGES FIGURE 8 - BASE-EMITTER VOLTAGE

versus BASE CURRENT versus COLLECTOR CURRENT
1.0 0.8
TJ =: 25°C
I- ,:
-=10
I I
I
i1! 0.8 I- '.
g TJ = 25°C
.,J
...
<> r'-.
~ 0.6
~ ...... ~ 1/
g \ \ Ie = 500mA
/
III 0.4
:::l
8 \ I'.. le-~oom~l+ /
J 0.2
o "- -
"-
Ie 10mA
I I II
Ie
-II
SOmAl
I~ = I~OmA
I I
0.3
P"" ~""'
0.1 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 30 50 10 30 50 70 100 300 500
I•• BASE CURRENT (mAde) Ie. COLLECTOR CURRENT (mAde)
FIGURE 9 - TEMPERATURE COEFFICIENTS FIGURE 10 - NORMALIZED CURRENT GAIN

CHARACTERISTICS
2.0
I ..I. 1c
--- -
Ve• =, VOLT TJ = +8s
z .,..........
~ +1.0 r-7~-t--t-:::::;i::;;....t":=!:;;:;;f--1""=j <
~ 1.0
~
""'-
l is TJ +25°C
~ !<> 0.7 ",
1"'0..
u
;;: g 0.5 'T, = -55°C
~ """"
~
",,-
<>
~ -1.0 t;;;:t::::;:::::r....t-f~f~t::;-tl ~
! 0.3
,,/
~
..
~ -2.0
Iv. (-55°C TO +25°C)
t--t--t--t--t--t--t--t--+----!
o
z
i V
-3.0 ......--I_--L_-'-_......._~_'--....._--L_-' 0.1
50 100 200 300 400 500 10 30 50 70 100 300 500
FIGURE 11 - LEAKAGE CHARACTERISTICS FIGURE 12 - JUNCTION CAPACITANCE

COMMON EMITTER versus REVERSE VOLTAGE
30
I
- TJ +85°C
- IS
/
Va =,-20V
K ~
1
10 ~.
I-
z
:Il +55O C
co:
=> 7.0 - V ,
TJ ...........
... 5.0
<>
.............. ~
T --
'THiiESHOLO 1
,
.... Lub,1 Current. I" is defined as
~
""'~ ....
f- VOLTAGE base leakage eurrenl wilh bolh junelions
~ reverse biased. Ie is .'ways less Ihan I.. C••
~ 3.0 for V01>V,. (VOl is off condition base
c
CD
~ ,) bias. V, is base voltage al Ihreshold of

eondielion.)
TJ +25°C
~r---......
1.0 J L 2
-0.25 0 0.5 1.0 1.5 2.0 0.4 0.5 0.7 1.0 3.0 5.0 7.0 10 20
Vo•• BASE-EMITTER REVERSE BIAS (VOLTS) REVERSE BIAS (VOLTS)
2-183
2N 1358, A(GERMANIUM}
2N 1359 (GERMANIUM)
2N1360
2N 1362 thru 2N 1365
2-184
2N 1408 (GERMANIUM)
PNP germanium transistor for high voltage neon driv-

er, solenoid and relay driver circuits.
All leads isolated
MAXIMUM RATINGS

Collector Dissipation at T A =25°C PD 150 mW
derating factor 2.0 mWjOC
ELECTRICAL CHARACTERISTICS ITA = 250 C unless otherwise noted)
C~aracteristlc Symbol Min Max Unit
Collector-Base Cutoff Current I CBO #Adc

(V CB = 5 Vdc, ~ = 0)
--- 7.0
Emitter-Base Cutoff Current lEBO #Adc

(V EB = 5 Vdc, IC = 0) --- 7.0
Collector -Emitter Leakage Current ICES #Adc

(VCB = 50 Vdc, .RBE = 0)
--- 150

(IC = 25 #Adc, ~ = 0) 50 ---
(~ = 25 #Adc, Ie
= 0) 10 ---
(~= 25 #Adc)
50 ---
Base-Emitter Jnput Voltage VBE Vdc
(IB = 1.0 mAdc, VCE = 1.0 Vdc)
--- 0.6
DC Current Gain hFE ---

(VCE -1 Vdc, IB = 1 mAdc) 10 ---
=5.0 Vdc, ~ =1.0 mA, f =1 kHz)
hfe ---
(VCE 10 ---
Output Admittance hob #mhos
(VCB = 5.0 Vdc, ~ =1.0 mA, f = 1 kHz) --- 2.0
2-185
2N 1412 (GERMANIUM)
2N1412A
~
" -)
PNP germanium power transistors for high-voltage
power amplifier and switching applications in military
CASE 5 II ,. I
and industrial equipment.
(TO-36)
MAXIMUM RATINGS
Collector-Base Voltage V CB 100 Vdc
E mitte r - Base Voltage VEB 60 Vdc
Emitter Current (Continuous) IE 15 Amp
Base Current (Continuous) IB 4.0 Amp
Junction & Storage Temperature Tstg -65 to +100 °c
Thermal Resistance I1JC

0.5 °C/W
POWER· TEMPERATURE DERATING CURVE

SAFE OPERATING AREA
0 160
30 150
5m. 1m. 500~. 250~. 140
...... S
" "-"-
0
10
'\ \. ~~~~ _I~O~'[ V
OR LESS- - !.
120
~ 100
\ ~ ""~ ~ :iii 80
"- 7" ~
. "-
/ '""'- ..... flt: , iii
Ia
60
"- ~
"
40
~
HO·WATT /
... 20
"
I POWER DISSIPATION AT
5 25'C CASE TEMrERAiURE
d~/
i\ 0
o 20 40 60 80 100
I
T~ 1001v. 8 mA
(2NlIOO ONLy)
The maximum continuous This curve bas a value of
(iWITH BACK BIAS APPtli--
ULSE tURVr ONjY) ~. :.,:rjJ~c~f~~t~~n:~;::ri; lJr~~1~~.~ =i~e.r~~~;
by the thermal resistance at 100·C with a linear rela-
O. I factor. tion between the two tern·
o 10 20 30 40 50 60 70 80 90 100 peratures such that:
COLLECTOR·EMITTERYOLTAGE (VOLTS) allowable PD = WO° - To
0.5
The Safe Operating Area Curves indicate l e - (Duty cycle of the excursions make no significant
2-186
2N 1412 (continued)
Characteristic Symbol Minimum Maximum . Unit
VEB " -2.0 Vdc
IC = 0
Emitter Cutoff Current lEBO - 10 mAdc
VEB = -60 Vdc
IC = 0
Collector Cutoff Current ICBO - 200 /lAdc
VCB = -2.0 Vdc
IE = 0
Collector Cutoff Current ICBO - 10 mAdc
VCB = -lOO'Vdc
IE = 0
VCE = -2.0 Vdc
IC = -1.2 Adc
VCE = -2.0 Vdc
Ie = -5.0 Adc
Floating Potential Vfl 1.0 Vdc
VCB = -100 Vdc
IE = 0
= 10 Megohm min)
Collector-Emitter Saturation Voltage VCE(SAT) 0.7 Vdc
IC = -12 Adc
IB = -2.0 Ade
Forward Current Transfer Ratio * hFE 10 - -
VCE = -2.0 Vdc

IC = -15 Adc
Forward Current Transfer Ratio hFE 25 50 -
VCE = -2.0 Vdc
IC = -5.0 Adc
Collector-Emitter Breakdown Voltage * BV CEO 60 - Vdc
IC = -1 Adc
IB = 0
Collector-Emitter Breakdown Voltage * BV CES 80 - Vdc
VEB = 0
IC = 300 mA
Small-Signal Short-Circuit Forward-Current faie 5.0 - kHz
VCE = -12 Vdc
IC = -5.0 Adc
High- Temperature Operation lEBO - 6.0 mAdc
TC = +71°C min
VEB = -30 Vdc
Collector Cutoff Current leBO - 6.0 mAdc
VCB = -30 Vdc
IE = 0
'Test by sweep method with a short duty cycle (about 1 %) to avoid excessive heating.
2-187
2N1412 (continued)
INPUT CHARACTERISTICS CURRENT TRANSFER CHARACTERISTICS
0.6 12
/ / ~
V
0.5 10 I / /'"
I _400C"")
'/ L"- OOC
JI ~ // /'
...ffi
Ci)
0.4 ~ S
C>.
I J :;;
5 Jj 0- - 25°C
::E
5
rl .......z ~
.......
z 0.3 IIJ ""g; 6
""
...""
=> SooC IIJ <.>
"" I'
~::l
<.>
en
« I V rt ~
CD
~
0.2 25°
r 1O
~~
o
<.>
4
1/
/ A1
.,
0.1 2
4°iC-
~~
0.2
1""""" i"""~
0.4
"
0.6 O.S 1.0
o
o
III
0.15 0.30 0.45 0.60 0.75

VER • EMITTER·BASE VOLTAGE (VOLTS) I". BASE CURRENT (AMPERES)
TRANSCONDUCTANCE CHARACTERISTICS OUTPUT CHARACTERISTICS
12 15
~
900
800
J
_700
J ~
10
I~
12
~
rsbo
I - ~_550
500
iil
..."" S SooC
j VI ~ ~_45Q
~OO
"j If
--
C>.
::E 350
5
.... 25°C ~
3 0
is
""=>"" 6
'/ ~-
250
<.>
""u0
....
ILVJ ~
2rO
1501
...::::l 4 / 1/V
1'--' 40 oC - ,/
.ioo
/ / /
0
u 50
~ -'
/ / / 3 I. _ 10 m!, I. _ 0
VES
\
=0
2
~, V
,/
, - ~~tb~
o .J U~
o 0.2 0.4 0.6 O.S 1.0 00 10 20 30 40 50 60 70 SO 90 100
V,,,.. EM ITTER·BASE VOLTAGE (VOLTS) Ve+:. COLLECTOR·EMITTERVOLTAGE (VOLTS)
2-188
2Nl175
PNPgermaniumtransistorsfor general-purpose low-

frequency amplifier and switching applications. Char-
CASE 31(1)
acteristic curves similar to 2N524-2N527 series.
(TO-5)
MAXIMUM RATINGS

Junction and Storage Temperature T j & Tstg -65 to +100 °C
Power Dissipation at 25°C Ambient Po 225 mW
ELECTRICAL CHARACTERISTICS· (T A; 25 0 C unless otherwise noted)

VCB ; 30 Vdc, IE; 0
ICBO - 12 pAdc

VEB ; 10 Vdc, IC ; 0
lEBO - 10 pAdc
IC; 0.6 mAde, RBE = 10 K
BVCER 25 - Vdc
Punch-Thru Voltage Vpt 25 - Vdc

DC Current Gain hFE
IC = 20 mAde, VCE = 1 Vdc
2N1413 25 42 -
2N1414 34 65
2N1415 53 90
2N1175 70 140
2-189
2N1413 thru 2N1415, 2Nl175 (continued)

DC Current Gain hFE
IC = 100 mAde, V CE = 1 Vdc
2N1413 23 - -
2N1414 30 -
2N1415 47 -
2N1175 62 -
VCE = 1 Vde, IC = 20 mAdc
2N1175 - 260 mVdc
Output Capacitance; Input AC Open Circuit Cob - 40 pF
VCB = 5 Vdc, IE = 1 mAdc, f = 1 MHz
Frequency Cutoff f",b

VCE = 5 Vdc, IE = 1 mAdc
2N1413 O.B - MHz
2N1414 1.0 -
2N1415 1.3 -
2N1175 1.5 -
Small-Signal Short-Circuit Forward-Transfer Current Ratio hfe
VCE = 5 Vdc, IE = 1 mAdc, f = 1 kHz
2N1413 20 41 -
2N1414 30 64
2N1415 44 BB
2N1175 60 120
Small-Signal Open Circuit Output Admittance hob
VCB = 5 Vdc, IE = 1 mAdc, f = 1 kHz
2N1413 0.10 1.3 /lmh
2N1414 0.10 1.2
2N1415 0.10 1.0
2N1175 0.10 0.9
Small-Signal Open-Circuit Reverse-Transfer Voltate Ratio h rb

2N1413 1.0 10 X10- 4
2N1414 1.0 11
2N1415 1.0 12
2N1175 1.0 14
Small-Signal Short-Circuit Input Impedance h ib
2N1413 26 36 /lmhos
2N1414 26 35
2N1415 26 33
2N1175 26 31
2N1420
For Specifications, See 2N718 Data,
2N1494, A, 2N 1495,2N 1496

2-190
2N 1529 thru 2N 1538
(GERMANIUM)
2N 1529A thru 2N 1532A, 2N 1534A thru 2N 1537A

amplifier applications in high-reliability equipment.
CASE 11 CASE 4-04

(TO-3) (TO-41)
For units with solder lugs attached, specify

devices MP1529, A etc. (TO-41 package)
MAXIMUM RATINGS
2N1529 2N1530 2N1531 2N1532 2N1533

Rating Symbol 2N1534 2N1535 2N1536 2N1537 2N1538 Units
Collector-Emitter Voltage VCEX 40 60 80 100 120 Vdc
Collector- Emitter Voltage VCES 30 45 60 75 90 Vdc
Collector-Base Voltage VCB 40 60 80 100 120 Vdc
Emitter -Base Voltage VEB 20 30 40 50 60 Vdc
Collector Current IC 5.0 Amp

(Continuous)
10 Amp
Collector Current Ie
(Peak)

Total Device Dissipation 106 watts
(25°C Case Temperature)
Po
Thermal Resistance IIJC 0.8 °C/W
2-191
=
ELECTRICAL CHARACTERISTICS (Tc 2S'Cunless otherwise specified.>
Characteristics apply to corresponding "A" type numbers also.
Characteristic S,mbol Min Max Unit
Collector-Base Cutoff Current ICBOl mA

(YCB " 25Y) 2N1529. 2N1534 - 2.0
(Y CB : 40Y) 2N1530.2N1535 - 2.0
(YCB " 55Y) 2N1531, 2N1536 - 2.0
(YCB" 65Y) 2N1532, 2N1537 - 2.0
(V CB " 80Y) 2N1533, 2N1538 - 2.0
Collector- Base Cutoff Current ICBO rnA

(V CB " 2Y) - 0.2
(VCB " I 2 BVCES rating; TC " +90 oC) - 20
Emitter- Base Cutoff Current rnA

lEBO
(Y EB " 12Y) - 0.5
Collector-Emitter Breakdown Voltage BV CES volts
---
(IC " 500 mA, V EB " 0) 2N1529, 2N1534 30
2N1530. 2N1535 45
2N1531, 2N1536 60
2N1532.2N1537 75 -
2N1533. 2N1538 90 -
Collector-Emitter Leakage Current ICEX rnA
(V BE " -lY, VCE @ rated BV CBO ) - 20
Collector-Emitter Breakdown Voltage BV CEO volts

(Ie " 500 mA, IB" 0) 2N1529,
2N1530,
2N1534
2N1535
20
30
--
2N1531,
2N1532,
2N1536
2N1537
40
50
--
2N1533, 2N1538 60 -
Collector-Base Breakdown Voltage BV CBO volts
(IC " 20 rnA) 2N1529, 2N1534 40 -
2N1530,
2N1531,
2N1535
2N1536
60
80
--
2N1532.,
2N1533,
2N1537
2N1538
100
120
--
Current Gain hFEl -
(V CE " 2V,IC " 3A) 2N1529 - 2N1533 20 40
2N1534 - 2N1538 35 70
Base- Emitter Saturation Voltage volts

VBE(sat)
(I C = 3A, IB = 300 rnA) 2N1529 - 2N1533 - 1.7
2N1534 - 2N1538 - 1.5
Collector-Emitter Saturation Voltage volts

VCE(sat)
(IC " 3A, IB = 300 rnA) 2N1529 - 2N1533 - 1.5
2N1534 - 2N1538 - 1.2
Transcondu.ctance mhos
gFE
(V CE = 2V, Ie "3A) 2N1529 - 2N1533 1.2 -
2N1534 - 2N1538 1.5 -
2-192
The maximum continuous power is

related to maximum junction tempera-
!~IFJ--+---+-
110~===F~;:~==~====~==~~ ture, by the thermal resistance fac-
l-i~~sg!J
-
tor. For dc or frequencies below
25Hz the transistor must be operated
within the constant Pn = Vc x Ic
hyperbolic curve. This curve has a
value of 106 Watts at case tempera-
~ 0 20 40 60 80 lao 110 tures of 25°C and is 0 Watts at 110°C
with a linear relation between the two
temperatures such that
P n allowable = 110° - Tc
0,8
COLLECTOR CURRENT versus BASE CURRENT COLLECTOR CURRENT versus EMITTER BASE VOLTAGE
VeE = 2V
/ v
/ V
2N1534 - 2N1538
J /
#
I'
2N1529 - 2N1533
./ 1.0 2.0 3.0

I•• BASE CURRENT lAMPS) v,. EMITTER·BASE VOLTAGE (VOLTS)
SWITCHING TIME MEASURING CIRCUIT DC CURRENT GAIN versus

TEST TRANSISTOR COLLECTOR CURRENT
..
Zo = SOil lSG
-----1 r--- ~GI = 2V
20V
I
I
LJ
PULSE GENERATOR
I
I 125
;\
'" '"
TYPICAL SWITCHING CHARACTERISTICS
..........
I'-.. t---. 2N1534 - 2N1538
2N1521-33
2N153W8
3
3
Ie V
3
R
65
100
t..+t.
(AMP) IVOLTS) (ohms). II'S}
3 10
8
t.
i/tS)
3
t,
("S)
5
25
'""r- r- r--
2Nl529 -lN1533
-r--r----
o0 1.0 2.0 3.0 4.0 5.0
Ie. COLLECTOR C~RRENT lAMP}
2-193
SAFE OPERATING AREAS - PULSE CONDITIONS
2N1529,2N1534' 2N1530,2N1535' 2N1531,2N1536'

10
=t~m'
1 m,
H
r- r- -Sms
l - I-- -1m, I"<- H.
5m,
1m,
1\
-c~ 500 "' l - I-- -500", 1500 ",
"t--
~~ ~ I--
\ \
\
f-- I- \r"' ~ 100 pS
>---
\
t\ 11 \
~250 /lS
I\. \
\
~
~
z
\ \ \\ 1\ i\\
\ ['\ \~
~
~
~
u
~
~
OC\ DC\ DC
r"\ \1
~ 0.7
,,,-
!
.fj
0.5
0.4
\
r-....
0.3
['\ "'-
0.1
~
TO 45V,3mA T060V,3mA TO 75 V, 3 rnA
0.1
o
WITH APPLIED
BACK BIAS
(FOR PULSE CURVES ONLY)
5 10 15 10 15 30 350 5 10 15 10
WITH APPLIED
BACK BIAS
(fOR PULSE CURVES ONLY)
15 30 35 40
\
45 50 0 5 10 15 10 25 30 35 40
WITH APPLIED
BACK BIAS
(fOR PULSE CURVES ONLY)
45 50 55 60
\65
V", COLlECTOR.£MITIER VOLTAGE (VOLTS)
2N1532,2N1537* 2N1533,2N1538
10
5ms .....
) 500 "'
1m,
5m,
1m, ~ " I\, 1\
~2501's
500 I~S
\ --::::; 250 1'5
1\ 1\ ~\\ r-.... [\ \ l\ \
\ .~~ ~~
t(:
['\
"
~
'\ "'-
!
~
'\
DS"-
r"-
\
~
}
i' ~~
~~
~
8
;;;i
0.7 ......
...... ", " ......
~ 0.5 ........
.fj 0.4
0.3
0.1
" '" I' .....
~ ~
TO 90 V, 3 rnA TO 110 V, 3 rnA
WITH APPLIED WITH APPLIED
BACK BIAS BACK BIAS
(fOR PULSE CURVES ONLY) (FOR PULSE CURVES ONLY)
0.1
o 10 10 30 40 50 60 70 800 10 10 30 40 50 60 70 80 90 100
V", COllECTOR·EMITIER VOLTAGE (VOLTS)
*Characteristics apply to corresponding' An type numbers also.
2-194
2N 1539 thru 2N 1548
(GERMANIUM)
2N1539A thru 2N1542A, 2N1544A thru 2N1547A
CASE 11 CASE 4-04

(TO-3) (TO-41)

devices MP1539, A etc. (TO-41 package)
MAXIMUM RATINGS
2N1539 2N1540 2N1541 2N1542 2N1S43
Rating Symbol 2N1544 2N1545 2N1546 2N1547 2N1548 Unit
Collector-Emitter Voltage VCES 30 45 60 75 90 Vdc
Collector-Emitter Voltage VCEX 40 60 80 100 120 Vdc

Emitter-Base Voltage VEB 20 30 40 50 60 Vdc
Peak IC 10 Adc
Total Device Dissipation @TC = 25· C PD 106 Watts
Operating Junction Temperature Range TJ -65 to +110 ·C

Thermal Resistance, Junction to Case eJC 0.8 ·C/W

related to maximum junction tempera- 110
ture, by the thermal resistance fac- ~10
tor. For d. c. or frequencies below !10( ...........
25 cps the transistor must be operated ~ 80
~
within the constant P n = Vc x Ie ~ 60
hyperbolic curve. This curve has a ~ 40 ~
value of 106 Watts at case ternpera- ~ 20 "'-..
tures of 25 0 C and is a Watts at 1100 C ~0 ....... i'...
with a linear relation between the two .... 0 20 40 60 80 100 110
temperatures such that Tc, CASE TEMPERATURE ('C)
P n allowable = 1100 - Tc
0.8
2-195
ELECTRICAL CHARACTERISTICS (Te =2SOC unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaget BVCEOt volts
(IC ; 500 mAdc, IB ; 0) 2N1539, 2N1544 20 -
2N1540,2N1545 30 -
2N154l,2N1546 40 -
2N1542,2N1547 50 -
2N1543,2N1548 60 -
Collector-Emitter Breakdown Voltaget BV CESt volts
(IC ; 500 mAdc, VBE ; 0) 2N1539,2N1544 30 -
2N1540,2N1545 45 -
2N154l,2N1546 60 -
2N1542,2N1547 75 -
2N1543,2N1548 90 -
Collector - Base Breakdown Voltage BV CBO volts
(IC ; 20 mAdc, IE ; 0) 2N1539,2N1544 40 -
2N1540,2N1545 60 -
2N154l,2N1546 80 -
2N1542,2N1547 100 -
2N1543,2Nl548 120 -
Collector Cutoff Current I CEX mA
(V CE @ rated VCB' VBE ; 1. 0 Vdc)
- 20
Collector Cutoff Current ICBO mA

(V CB ; 2.0 Vdc, IE ; 0) - 0.2
(V CB ; 1/2 VCES rating, TC ; 90°C) - 20
Collector Cutoff Current I CBOl mA

(V CB ; 25 Vdc, IE; 0) 2N1539,2N1544 - 2.0
(V CB ; 40 Vdc, IE ; 0) 2N1540,2N1545 - 2.0
(V CB ; 55 Vdc, IE; 0) 2N154l,2N1546 - 2.0
(V CB ; 65 Vdc, IE; 0) 2N1542, 2N154 7 - 2.0
(V CB ; 80 Vdc, IE ; 0) 2N1543,2N1548 - 2.0
ON CHARACTERISTICS
DC Current Gain hFEl -
(IC ; 3.0 Adc, V CE ; 2.0 Vdc) 2N1539-2N1543 50 100
2N1544-2Nl548 75 150
DC Transconductance gFE mhos

(IC ; 3.0 Adc, VCE ; 2.0 Vdc) 2N1539-2N1543 3.0 -
2N1544-2N1548 5.0 -
Collector-Emitter Saturation Voltage VCE(sat) volts

(IC ; 3.0 Adc, IB ; 300 mAde) 2N1539-2N1543 - 0.3
2N1544-2N1548 - 0.2
Base-Emitter Saturation Voltage volts

VBE(sat)
(IC ; 3.0 Adc, IB ; 300 mAde) 2N1539-2N1543 - 0.7
2N1544-2N1548 - 0.5
(IC ; 3.0 Adc, VCE ; 2.0 Vdc)
Characteristics apply to corresponding A type numbers also.

tTo avoid excessive heating of collector junction, perform this test with a sweep method.
2-196
SWITCHINO TIM. M.ASURINO UNIT
TRANSISTOR
11,1_ Can~ltlo.l" SWII::r~:·:I".1
Zo • ~on
I.n.
Ie V 1,,+1. I,
~)
R
~.------! r------ (Amp) (Volts) (ohml) ~) ~)
165 5 3 5
20Vl... .J 2N153,",3 3 3
2N1544-48 3 3 250 5 3 8
PULSE GENERATOR
"Input Pulse Repetition Rate = 2 kHz,
Pulse Width = 50 P.s
COLLECTOR CURRENT versus EMITTER BASE VOLTAGE COLLECTOR CURRENT versus BASE CURRENT
I I
I
I
VCI = - 2 V V",=-2 V
I
/ c:
~ 4
2NI544·2NI548
--, V V 7
Vl/. Vr--..
.... If
~ V il!
..,'"
::::I
J ~ V
:!S
....
2NI544-2N1548
I ~..,
2NI539·2NI543
~
V
J. V .2
0.1
~
0.2
~ A.. ,
0.3 0.4
2N1539 .2N1542
0.5 0.6
o
II
o 10 20 30 40 50 60 70 80 90
VEl. EMlmR-BASE VOLTAGE (VOLTS) I" BASE CURRENT I mA )

2N1539, 2N1544
20
I. JPEAK 5ms I Im1s sLid
Oft LESS
The Safe Operating Area Curves indicate 10
Ic - VCE limits below which the device will
not go into secondary breakdown. Collector
load lines for specific circuits must fall i "-\.
within the applicable Safe Area to avoid
I
3
-"i"""r
I =ooLV "
causing a collector-emitter short. (Case 2
1\
'"
temperature and duty cycle of the excur-
sions make no significant change in these 1
safe areas.) To insure operation below the ~~~~~Sir~~~:TURE
maximum TJ. the power-temperature de-
rating curve must be observed for both
0.'
D.• "
steady state and pulse power conditions. 03
.. D.'
0.1
.0
- f-
10
TO 45V.3 mA
WITH BACK BIASAPP~If--
(PULSjCURVES1DNlYI
15 20
COlLECTOR.fMlnER VOLTAGE (VOL TSI
2S
,_
r
30 35
2N1540, 2N1545 2N1541, 2N1546 2N1542.2N1547 2N154:t. 2N1548

20
0
"~,,,.J.,
II.
\". 1 I~' 50011'1 lOO~
ORlfSS
+t"'~EJ ,,,. Im~ ~,; ".~"'! ,Im\ 1~5
51" ,J.,;~" ::r 1m,1 1 1
v1"'''i
250 ...s
:o~~
250- 250"
OR LESS OR lESS
•• "
if ,
~ \ I:' ~~\
I~ ,1..1 /VI"r\.
2
1
\ "i}T'~
9O-WAn
r-- 1\ ~ "T"y~
9(J..WAn
'TrvKr-..r-..~
9O-WATT
PQWEROISSIPA11~ POWER DISSIPATION POWERDISSIPATlnN POWER DISSIPATION
~ 25"CCASETEMPIRATURE 25"C CASE TEMPERATURE 25°C CASE TEMPERAtURf 2s o CCASETEMPERATURt:
8
.... d•
d•
• I"
02 1--+-+---1- TJ
WIT1iBACKBIASAPp~I~-rr
6OV,lrlA
i
I-+-H+-+ TO'TI",5!.:..
w 3}.',,, APPL'EO
......... l'~ --1\ 1--I--+-j-T090V.3mA
.1
1,!,'TiONT r-~\ (PU1"'i"j"i"i I'~\
wnH.BACKBIASAPP,~~
(PUiSECUjVESjlYJ I
o 5 10 l!i 20 25 3D 354045 500 5101520 n 30354045 so 55 60 650 10 20 30 40 50 60 10 SOo 1020 :JO 40 50 60 70 10 90 100
COLlECTOlI-[MlnER VOLTAGE (VOLTS) COUECTOR.£MmER YOLUGE (VOlTS) COllECTOR-EMmER VOlTAGE {VOlTS] COWCTOff.lMmER VOLTAGE {VOlTS)
2-197
BASE CURRENT versus EMITTER BASE VOLTAGE DC CURRENT GAIN versus COLLECTOR CURRENT
10 0 240
I I I I
0 YCE =- 2 Y Ye .=- 2Y
200
o. I I
. .. I I
! 70
2N1539-2N1543 \ - z 160
.....
IE
III
:::>
60
I 17II
~
5 .......
, / 2N1544-2Nl548
...
!
50
II
II 120
...
:::> -...r- ~
~ 40 2N1544-2N1548 .........
0 1'-..... ~ I 80 '-
~
20 / / 40 ~
2N1539-2N1543 I/
//
10
o
o 0.1 0.2
./". " ,
0.3 0.4 0.5 0.6
o
o
rI I 4
V'" EMITIER-BASE VOLTAGE (VOLTS) Ie. COLLECTOR CURRENT (AMP)
2N 1549, A thru 2N 1560, A(GERMANIUM)


devices MP1549, A etc_ (TO-4·1 package) CASE 4-04
CASE 11A
(TO-3 modifiedl ITO-411
MAXIMUM RATINGS Apply to corresponding "Hi-Rei" Series also

2N1549 2N1550 2N1551 2N1552
Rating Symbol 2N1553 2N1554 2N1555 2N1556 Units
2N1557 2N1558 2N1559 2N1560
Collector-Emitter Voltage VCEX 40 60 80 100 Vdc
Collector-Emitter Voltage 30 45 60 75 Vdc

VCES -
Collector- Emitter Voltage 20 30 40 50 Vdc
VCEO -
Emitter-Base Voltage VED 20 30 40 50 Vdc
Collector Current (Continuous) IC 15 Amp
Collector Current (Peak) IC 20 Amp
Collector Junction Temperature TJ -65 to +110 °c

Collector Dissipation PD 106 Watts
(25'C Case Temp.)
Thermal Resistance °JC 0.8 °C/W
2-198

Characteristics apply to corresponding A type numbers also.

Collector-Base Cutoff Current ICBO! rnA
(V CB = 25 V) 2N1549, 2N1553, 2N1557 - 3.0
(V CB = 40 V) 2N1550, 2N1554, 2N1558 - 3.0
(V CB = 55 V) 2N1551, 2N1555, 2N1559 - 3.0
(V CB = 65 V) 2N1552, 2N1556, 2N1560 - 3.0
Collector-Base Cutoff Current I CBO rnA

(V CB = 2 V) - 0.2
(V CB = 1/2 BV CES rating; TC = +90°C) - 20
Emitter-Base Cutoff Current rnA

lEBO
(V EB = 12 V) - 0.5
Collector-Emitter Breakdown Voltage BV CES volts

(I C = 300 mAl
2N1549, 2N1553, 2N1557 30 -
2N1550, 2N1554, 2N1558 45 -
2N1551, 2N1555, 2N1559 60 -
2N1552, 2N1556, 2N1560 75 -
Collector-Emitter Leakage Current ICEX rnA
(V BE = 1.0 V, VCE @ rated BV CBO) - 20
Collector-Emitter Breakdown Voltage* BV CEO * volts

(I C = 300 mA, IB = 0)
2N1549, 2N1553, 2N1557 20 -
2N1550, 2N1554, 2N1558 30 -
2N1551, 2N1555, 2N1559 40 -
2N1552, 2N1556, 2N1560 50 -
Collector-Base Breakdown Voltage BV CBO volts
(I C = 20 mAl
2N1549, 2N1553, 2N1557 40 -
2N1550, 2N1554, 2N1558 60 -
2N1551, 2N1555, 2N1559 80 -
2N1552, 2N1556, 2N1560 100 -
Current Gain hFEl -
(V CE = 2.0 V, IC = 10 A)
2N1549 - 2N1552 10 30
2N1553 - 2N1556 30 60
2N1557 - 2N1560 50 100
Base-Emitter Drive Voltage VBE volts
(IC = 10 A, IB = 1. 0 A)
2N1549 - 2N1552 - 1.3
2N1553 - 2N1556 - 1.0
2N1557 - 2N1560 - 0.85
Collector Saturation Voltage volts
VCE(sat)
(IC = 10 A, IB = 1. 0 A)
2N1549 - 2N1552 - 1.0
2N1553 - 2N1556 - 0.7
2N1557 - 2N1560 - O. 5
2-199

Transconductance gFE mhos
(V CE = 2.0 V, IC = 10 A)
2N1549 - 2N1552 6.0 18
2N1553 - 2N1556 8.0 30
2N1557 - 2N1560 12 40
Frequency Cutoff f
ae
Typ kHz
2N1549 - 2N1552 10
2N1553 - 2N1556 6.0
2N1557 - 2N1560 5.0
COLLECTOR CURRENT versus BASE CURRENT COLLECTOR CURRENT versus EMInER-BASE VOLTAGE
1· 14
12
J
Willi
~I
2N1557·2N1560
."...., ..-
12
2N1553-2N1556 ...
I- ~
'/
V
~
,. 10 /
V
I I
2N1553·2N1556 V
,.~ 10 I /
~
....
is i
If
Y V-
...
~
l!l
2N1557-2N15S0 /
/ /
1Ii V"
'"'"::><.>
'"e 6
2N1549-2N1552,
'"
::>
<.>
e'" 6
V/ J
'IV V
I
~ ,= -2V ~ vc,= -2V
0
<.>
~
4 /
Vc
0
<.>
,g 4
/ 1/ 2N1549-2N1552
J V It'
o o
JII ~~
o 0.2 0.4 0.6 O.B 1.0 o 0.2 0.4 O.S O.B 1.0
I"~ BASE CURRENT (AMPS) v", EMITTER-BASE VOLTAGE (VOLTS)
CURRENT GAIN versus COLLECTOR CURRENT BASE CURRENT versus EMInER-BASE VOLTAGE
140 1.0 r--..,--,-..,--,-..,--,--r--r-'-,----,
120
.... vc ,= - 2V
O.B t--t--+--t--+--t--+--t--+-I-+---l
K.,NI557.2NI5S0
100
z:
I'k ,.~
;;:
co
.... BO N ~ O.S t--+-+--+-+--+-+--+--t+--+----i
z
to- ~
r--... r-.. ~
~ ~53r?5SI
::>
::>
"' ..... r--- <.>
....
--
<.> 60
1 I"N... ~ 0.4 t--t--+--t--+--t--t-:-t-++-;---l
I I I I I l""'- I'-
40 - ' ...... ;:::: 2N1549-2N1552
'"
-
0.21--+---+
20 .......
r-
o
o 4 10 12 14 IS 0.2 0.4 O.S 0.8 1.0
'c, COLLECTOR CURRENT (AMPS) V", EMMITER-BASE VOLTAGE (VOLTS)
2-200
The Safe Operating Area Curves indicate Ic- (Duty cycle of the excursions make no significant
V CEl limits below which the device will not go into change in these safe areas.) To insure operation
2N1549, 2N1553, 2N1557 2N1550, 2N1554, 2N1558 2N1551, 2N1555, 2N1559 2N1552, 2N1556, 2N1560
, ... ,m,
/lcMAXPEAM 5ms 'm. 1 Ie MAX PEAK ShlS 'm. /500,111 IcMA)(PEAK 'm. 500,lls1 /leMAKPEAK/Sms 50°111
:, \\I\. '<. 1\ i,\~50,ll5

OR LESS t\' \
."<
i'..
"< '\1\ lOOpS
DR LESS
I\~ K 1'\ r\f.-!~~~ \\\ ~ ~ «- 250,111
DR lESS
5 IcMAXCONT.
}'o. ~
'ciAXCjNT "-./ I>- "-
I"\. .......
/ I" 1\ I-\' IcMAXCONT.
t"-- l\
"""'CO'),7
\.
\
,
9O·WATT
POWER DISSIPATION
25°CCASETEMPEIlATUAE ~~ ,.U //1" i'- f'\
POWER DISSIPATION
tL11
POWERDISSIPAT10N
i'-i'- ~ ~JTT ~
POWER DISSIPATION
,........
t'"'
25°C CASE TEMPERATUAE 25°C CASE TEMPERATURE 25°CCASETEMP[RATURf
d,
• d,
d,
'.4
3 "
2 r - t-- T045V.3mA l ,,-
- T~"V.3.J -r- T075V,3mA
I-WITHBACKBI"APP\'~ ~~T~:AlK~ASAPPlItD
WJTHBACKBIASAPPL~ WITHBACKBIASAP~~~
rsYui . . ~I' -
" 10
IPULSjCURViLYl
15 20 25
COWCTOR.£MmEIt VOLTAGE MILTS}
30 350 5 10 Hi
tiUlS'I'Uj'"\"
20 25 30 .
3
COUECTOR.fMITTER VOLTAGE (VOl.TSl
"
f\.
45 50'
iPU'i"l'j 'l~
51015202530354045505560650
COLLECTOR.fMITTERVOLTAGEIVOlTS)
10 20 30 .. . . 50
COllECTOR.fMmER VOlTAGE MILTS}
70

related to maximum junction tempera- 110
ture, by the thermal resistance fac - ~ 106
tor. For dc or frequencies below !IOO
25 Hz the transistor must be operated ~ 80
within the constant PI) = Vc x Ie ~ 60
""" ~
~
hyperbolic curve. This curve has a ~ 40
"-..
value of 106 watts at case tempera-
with a linear relation between the two

temperatures such that Pn allowable
~ 20
tures of 250 e and is 0 watts at 1100 e ,f
0 20 40 60
Te. CASE TEMPERATURE ('C)
80
'" .......
100 110
i'.....
=1100 - Tc
0.8
SWITCHING TIME MEASURING UNIT
TRANSISTOR
O.. lces C••dlll ••• •
. SWII::r~:~lm.s
Ie V R t..+1 I,
Zo = 50n In (Amp) (V.lts) (ohms) (,.s) (ps) ~;s)
2N1549 ·52 10 10 10 5 2 10
<RIO •• ·5. lu 10 30 10 5 25
2ovL... J
PULSE GENERATOR
. 2"1557 -60 10 10
Input Pulse Repetotton Rate _ 2 kHz,
Pulse Width = 50 "s
50 10 5 25
2-201
2N 1561 (GERMANIUM)
2N1562
2N1692
2N1693
PNP germanium mesa transistors for VHF power

CASE 23 CASE 24
(TO·l07) (TO·l02)
2N1561 2N1692
2N1562 2N1693
Collector connected to case;
stud isolated from case
MAXIMUM RATINGS

Collector-Emitter Voltage VCE 25 25 25 25 Vdc
Emitter-Base Voltage* VEB* 3.0 2.0 3.0 2.0 Vdc

Collector Current -Continuous IC 250 250 250 250 mAdc
Peak 500 500 500 500
Total Device Dissipation @ T A = 250 C PD 250 250 350 350 mW
Derate above 25 0 C 3.33 3.33 4.67 4.67 mw;oC
Total Device Dissipation @ TC = 250 C PD 3.0 3.0 3.0 3.0 Watts

Derate above 25 0 C 40 40 40 40 mW;oC
Operating and Storage JWlction T J , T stg -65 to 100 °c
Temperature Range
*May be exceeded provided total rated device dissipation is not exceeded.

POWER GAIN versus FREIlUENCY SAFE OPERATING AREA
14 600r---r---r--'--~~---'
I, I 12NI562
Po = 450mW j2NI693
2
r:::: ~
12NI561 -
Po = 550mW J2NI692
= ··-15VOC
g 10
VCE
T" = 25°C
~z 8 \\ 2NI561
~
2NI562 --"""\
2NI693
l\ 2NI692
~ 6
~ I~
4
2 ~
0
50 70 100 150 200
"\ 300 400
O~~~~~~~~~~
o 10 15 20 25
fREQUENCY (MH,) Veo • COLLECTOR·BASE VOLTAGE (VOLTS)
2-202
2N 1561, 2N 1562, 2N 1692, 2N 1693 (continued)
Cha racteristic
OFF CHARACTERISTICS

(IC=100pAdc, VBE=O) 25 - -
Collector-Base Breakdown Voltage BVCBO Adc
(IC = 100/lAdc, IE = 0) 25 - -
Collector Cutoff Current /.IAdc
ICBO
(VCB = 10 Vdc, IE = 0) - 1.5 10
Emitter Cutoff Current mAdc
lEBO
(VBE = 0.4 Vdc, IC = 0) 2N1562,2N1693 - 5.0 -
(VBE = 1. 0 Vdc, IC = 0) 2N1561,2N1692 - 5.0 -
ON CHARACTERISTICS

VCE(sat)
ere = 200 mAdc, IB = 40 mAdc) 2N1561,2N1692 - - 3.0
ere = 200 mAdc, IB = 40 mAdc) 2N1562,2N1693 - - 4.0

(Ic = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N1561,2N1692 - 500 -
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N1562,2N1693 - 450 -
OUtput Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 100 kHz) - 7.0 10
Small-Signal Current Gain hfe dB
(IC = 50 mAdc, VCE = 10 Vdc, f = 160 MHz) 2N1561,2N1692 - 10 --
2N1562,2N1693 - 9.0
Extrinsic Base Resistance r' Ohms
(IE = 20 mAdc, VCB = 10 Vdc, f = 300 MHz) b - 25 -
FUNCTIONAL TEST
Power Gain Gpe dB

ere = 100 mAdc, VCE = 15 Vdc, Pout = O. 5 W, f = 160 MHz)
2N1561,2N1692
6.0 - -
(IC = 100 mAdc, VCE = 15 Vdc, P t = 0.4 W, f = 160 MHz) .5.0 - -
ou 2N1562, 2N1693
Power OUtput Watt
Pout
ere = 100 mAdc, VCE = 15 Vdc, Pin = 125 mW, f = 160 MHz)
2N1561,2N1692 0.5 - -
2N1562,2N1693 0.4 - -
2-203
2N 1561, 2N 1562, 2N 1692, 2N 1693 (continued)
POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus CoLLECToR·EMITTER VOLTAGE
2NlS61/2N1692 2NlS6212N1693
1.0 100 1.0 100
~ 0.8 ~
u
oS
80
I
E....
in 0.8
~
Iso
....
II
... .... - - -1- -- 1--- ~
.
-
z 3:: is En
~ ,..... ;:: 0.6 ~
0.6
~ 60 gj60
r ;;;::
~;:.--
."., :::>
~
:::> :::>
0 :::>
<.>
V
0
'"
<J
Ie
;;;
'"
.
~ 0.4 '"
0
.... 40
V 4
..
~ 0.4
0
'"~ 40
~
~
0
~ ~
.: 0.2
5<.> / P" = 12SmW_ 0
S 20 PI' = 12SmW_
20
f= 1601 MHz 0.2
V ,= 160MHz
..f>
10
T.= 25°C
15
L......t 10
I 15
T. = 25°C
VI'>" COLLECTOR·EMmER VOLTAGE (VOLTS) Vn , COLLECTOR·EMITTER VOLTAGE (VOLTS)
POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus POWER IN

2NlS61/2N1692 2N1562!2N1693
100 100
= -15Vdc
V, .• Vo" = -15Vdc
1.0 80 ,= 160,MHz 1OO~ 1.0 80 f-' = 160MHz 100 ~
~ T. = 25°C
~ T. = 25°C
V V >-
<J ~ 0.8 oS
.... .1 V
~ 0.8 oS 60 8 is ~
'7
~
60
~ ~ .....- c:; l-
i
" --
gj 40 § :::>
0 :::> /
5 0.6 :::>
V t~
6
:='"
'"
~
0.6 <J
'"
40 ...... -.::,..; k
5
0 <.>
, .... ....
0
V
'"~
!C
.: 0.2
0.4 '"0
....
~
5<J
20
'./
... V("
2
~
0
.,
<J
.
0
'\ 0.4
0.2
~
<.>
20
E '.' __
., .... ............ 7t,

-
~ - 'V 0
0
25 50 75 100 125 150 25 50 75 100 125 150
p .. , POWER IN (mW) p.. , POWER IN (mW)
POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus FREQUENCY

2N1561/2N1692 2N1562!2N1693
1.0 u
10 0
80
I--
-wI~.1 100 1.0 "
100
80 100
~
t-- t-. P, in
i f-I i'--'
!~ 0.8 .... ~ ~ e
oS
60 80 >-
i 0.8 .... 60 r- 80 ~
~:::> -- -- ~ -- ~ i' ~
I--Pr.-
"
<J <J
50 is 50 I-.. is
c:;
'"~
.
0.6 <J
'"0
....
40
"',
60
~ '"~
..
0.6 ~ 40
~
-- -~ ~
~.
\
60 <3
~
'"0
t '"~
0 <J
0
0.4 0 40 0.4 0 40
~ v, .• = -15Vdc ~ = -15Vdc
I-
.: I' ~
V"F.
~ ~
0.2
<J
.2 tP"T. == 125mW
25°C
20 0
<J
.
0.2 <J
Pox = 125mW
T. = 25°C
20 0
..
<J
a' 40
I
60 80 lOa 160 200 300 400
a o I
40
I
60 80 100 160 200 300 400
FREQUENCY (MHz) FREQUENCY (MHz)
2-204
2N 1595 thru 2N 1599 (SILICON)
31(~
Industrial-type, low-current silicon controlled recti-
fiers in a three-lead package ideal for printed-circuit
applications. Current handling capability of 1. 6 am-
peres at junction temperatures to 125°C.
CASE
(T0-5) 'J \ \
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
Peak Reverse Blocking Voltage* VRSM(rep)* Volts

2N1595 50
2N1596 100
2N1597 200
2N1598 300
2N1599 400
Forward Current RMS IT(RMS) 1.6 Amp

(All Conduction Angles)
Peak Forward Surge Current ITSM Amp

(One Cycle, 60 Hz, T J = -65 to + 125°C) 15
Peak Gate Power - Forward PGM 0.1 Watt
Average Gate Power - Forward PG(AV) 0.01 Watt
Peak Gate Current - Forward IGM 0.1 Amp
Peak Gate Voltage - Forward VGFM 10 Volts

Reverse VGRM 10

*VRSM for all types can b!l applied on a continuous dc basis without incurring damage.
GATE TRIGGER CHARACTERISTICS FORWARD CONDUCTING CHARACTERISTICS

100
,.
1L 10
-----
50 MAXIMUM ALLOWABLE GATE POWER ",
3.0 VOLTS PGM" 100 mW 5.0
::t
.§
f-
~
20
lO
5.0
~~~tl~~~~gE ~
"'·"~~'"t-
ffi '- AS A TRIGGER CIRCUIT DESIGN CRITERIA
~
'"'"=>
u
2.0
1.0
~ TYPICAL /~
-, ~'MAXIMUM
'"~ 2.0 ~t-~ ALL ~~~~:f~k~~:W~~~t~~~YA~~~TAGE ~

.... ~ct 0.5
'"'"
'"
1.0
0.5
~o~
i~~ 10 rnA GATE CURRENT REQUIRED

!5:
'" Zz TO TRIGGER ALL UNITS 0.2
I
"'
f-
'"f-
0.2
~;:i:
z<t:
=> ~
(TJ = 12S'"C - 5 mA)
(TJ:;:::; -65°C - 15 mAl
•
~
=>
~
0.1
if NOTE: VOLTAGE DROP MEASURED
'I:z INCH FROM BOTTOM OF CASE
0.1 z
'"'".::
0
Z MAXIMUM ALLOWABLE FORWARD O.O~
!!? .02
.05
TYPICAL TRIGGER POINT
GATE VOLTAGE 10 VOLTS '"
f-
z T, 125O C -
'"
In 0.02
I
j TJ =25°C -
.001
'"
1::' 0.01 1
3 4 5 6 7 10 o 1.0 2.0 3.0 4.0 5.0
VGT. GATE VOLTAGE (VOLTS) VT.INSTANTANEOUS FORWARD ON VOLTAGE (VOLTS)
(T, = 25°C. ANODE @ 12 VOLTS)
2-205
2N1595 thru 2N 1599 (continued)
Peak Forward BlockingVoltage* VORM* Volts

(T J = 125°C) 2N1595
2N1596
50
100
-
-
--
2N1597
2N1598
200
300
-
-
--
2N1599 400 - -
Peak Forward Blocking Current IORM rnA
(Rated VORM with gate open, T J = 125°C) - - 1.0
Peak Reverse Blocking Current IRRM rnA

(RatedVRSM, T J = 125°C) - - 1.0
Gate Trigger Current (Continuous de) IGT rnA

(Anode Voltage = 7 Vdc, RL = 12 Q) - 2.0 10.0
Gate Trigger Voltage (Continuous de) VGT Volts

(VORM = ~ated, RL = 12 n, TJ = 125°C) VGNT 0.2 - -
Holding Current IH niA
(Anode Voltage = 7 Vdc, Gate Optm) - 5.0 -
Forward On Voltage VTM Volts
(IT = 1 Adc) - 1.1 2.0
Turn-On Time (td + t r ) tgt /.IS

(IGT = 10 rnA, IT = 1A) - 0.8 -
Turn-Off Time tq /.IS
(IT = 1 A, IR = 1 A, dv/dt = 20 V/ /.IS, TJ = 125°C) - 10 -
(VORM = rated voltage)
*VORM for all types can be applied on a continuous de basis without incurring damage.
CURRENT DERATING
CASE TEMPERATURE AMBIENT TEMPERATURE
G
...
~110~--~~~~~---+--~----~--~--~
'"
:::>
~...
...~ 90t--1--
5 80
,.E
DC
1.2 0.5 0.7

iT(AV).AVERAGE FORWARD CURRENT (AMP) iT(AV). AVERAGE FORWARD CURRENT (AMP)
2N 1613 (SILICON)
For SpeCifications, See 2N718A Data.
2-206
2N 1651 thru 2N 1653 (Germanium)
CASE 161 CASE 3A

(TO-41) (TO-3 modified)
2N1651 thru 2N1653 2N2285 thru 2N2287
PNP Germanium power transistors designed for high-current

switching applications requiring low saturation voltages and fast
switching times in addition to good safe operating area.
MAXIMUM RATINGS
2N1651 2N1652 2N1653
Collector-Emitter Voltage VCEO 30 60 80 Vdc,
Collector - Sase Voltage 60 100 120 Vdc
--
VCS
Emitter-Sase Voltage VES 1.5
- Vdc
Collector Current - Continuous IC '25

- Adc
Sase Current - Continuous IS

- 5.0
- Adc
Total Device DiSSipation@T C =25°C

Derate above 25° C
PD
- 106
1. 25 - Watts
wic
Temperature Range
T J , Tstg - -65 to +110- °c
Thermal Resistance, Junction to Case IiJC 0.8 °C/W
FIGURE 1 - SUSTAINING VOLTAGE TEST CIRCUIT
IB(off) --+-
O.25mH
'R3 ""-::>,--JIoIII'v--<l...rY'Y'Y'---,
R1 = 1.0 Ohm, 20 Watts R5' IC Adi"st@VCE=VZ .0----.-''---'''''''+-1.
RZ =1.5 Ohms, 2.0 Watts
A3 = 0.1 Ohm, 1.0% 81: Adjust for IB(on)= ¥& IB(on)
R4 'S 0.04 Ohm 82 = 1.5 Vdc, Adjust for I B(off) "" 0.2 Adc
B3 = 12 Vdc 50W
*Not required if current probe is used to read IBl '''VZ

**PRF '00: 60 Hz
***Zenerselected to establish Sustaining Voltage.
NOTE: Series impedance and inductance must be kept to a minimum.
2-207
2N1651 thru 2N1653/2N2285 thru 2N2287 (continued)
ELECTRICAL CHARACTERISTICS (Tc =2S"C unless otherwise noted)
I Characteristic Symbol Min Max
OFF CHARACTERISTICS
(IC = 100 mAdc, IB = 0) 2N1651, 2N2285 30 -
2N1652, 2N2286 60 -
2N1653, 2N2287 80 -
Collector-Emitter Sustaimng Voltage (See Figure 1) Vdc
VCE(sus)
(IC = 25 Adc) 2N1651, 2N2285 40 -
2N1652, 2N2286 45 -
2N1653, 2N2287 50 -
Collector Cutoff Current ICB01 /lAdc
(V CB =2.0Vdc, IE =0) - 200
Collector Cutoff Current ICB02 mAdc

(VCB = 40 Vdc, ~ = 0) 2N1651, 2N2285 - 5.0
(V CB = 80 Vdc, IE = 0)' 2N1652, 2N2286 - 5.0
(V CB = 100 Vdc, IE = 0) 2N1653, 2N2287 - 5.0
Collector Cutoff Current I CB03 mAdc

(V CB = 40 Vdc, IE = 0, TC = 100'C) (+0,-3. O'C) 2N1651, 2N2285 - 35
(V CB = 80 Vdc, IE = 0, T C = 100° C) (+0,"3. O' C) 2N1652, 2N2286 - 35
(V CB = 100 Vdc, IE = 0, TC = l(lO'C) (+0, -3.0' C) 2N1653, 2N2287 - 35

(V CB = 60 Vdc, IE = 0) 2N1651, 2N2285 - 20
(V CB = 100 Vdc, IE = 0) 2N1652, 2N2286 - 20
(V CB = 120 Vdc, IE = 0) 2N1653, 2N2287 - 20

(V EB = 1. 5 Vdc, IC = 0) - 50
ON CHARACTERISTICS
(IC = 10 A4c, V CE = 2.0 Vdc) 35 140
(IC = 25 Adc, VCE = 1. 5 Vdc) 20 -
VCE(sat)
(IC = 25 Adc, IB = 2.5 Adc) - 0.30

VBE(sat)
(IC = 25 Adc, IB = 2.5 Adc) - 0.65
(IC = 0.5 Adc, V CE = 6.0 Vdc, f = 30 kHz)
Rise Time tr - 12 /ls
Storage Time (IC = 25 Adc, IB(on) = 2. 5 Adc, IB(off) = 2.5 Adc) t

s - 10 /lS
Fall Time (See Figure 2) tf - 8.0 /lS
1.1
SCOPE D-_---'VV'Ir---,
PULSE WIDTH = 50 IlS Adjfor

DUTY CYCLE = 10% ISlon)= 2.5 A
~ 12V
rUT
Adj
~28V IC = 25 A
PULSE
GENERATDRO-_ _ _ _ _ _~_ _ _ _ _ _ _~_~~_ _ _~---_ _J
2-208
2N 1692, 2N 1693
PNP germanium transistors for audio driver appli-

cations in transistorized radio receivers.
CASE 31(1)
(TO-S)
MAXIMUM RATINGS
Rating Symbol 2"1705 2"1706 2"1707 Unit

Collector-Base Voltage V CB 18 25 30 Vdc
Collector-Emitter Voltage (R BE = 1 K) VCER 12 18 25 VdC
Emitter-Base Voltage V EB 5.0 5.0 10 Vdc
Collector Current IC 400 rnA
Collector DisSipation at T C = 25°C PD 200 mW
2-209
Characteristic Symbol Min TJP Mu Unit

Collector- Base Cutoff Current ICBO /lAde
(V CB = -10 Vdc) 2N1705 --- 5.0 10
(V CB = -25 Vdc)
2N1706
2N1707
--- ---
--- ---
10
15
Emitter- Base Cutoff Curr.ent lEBO /lAde

(V EB = -5 Vdc) 2N1705 --- 4.0 20
(V EB = -10 Vdc)
2N1706
2N1707
--- ---
--- ---
20
10
Collector- Emitter Voltage BVCER Vdc

(IC = I mAde, RBE = I K) 2NI705 12 --- ---
2N1706
2N1707
18
25
--- ---
--- ---
Base-Emitter Voltage V BE Vdc
(IC = 10 rnA, V CE = 5 V) 2NI706 0.15 --- 0.35
(IC = 20 rnA, V CE = I V) 2NI705 0.2 --- 0.4
DC Current Gain
(I C = 10 mAde, VCE = -5 V) 2NI707
hFE
40 90 150
---
(IC = 20 mAde, VCE = -I V) 2N1706 60 --- 120

(IC = 1 rnA, VCE = -6 V, f = 1 kHz) 2N1705
hfe
70 110 150
---
(IC = 10 rnA, V CE = -5 V, f = 1 kHz) 2N1706 50 90 150
2N1707 30 --- 150
Output Admittance Conductance hob /lmhos

(IC = I rnA, VCB = -6 V, f = 1 kHz) 2N1705 --- 0.5 . ---
(I C = 10 rnA, V CE = -5 V, f = 1 kHz) 2N1706, 2N1707 --- 3.0 ---
(IC = 1 rnA, Vcli: = - 6 V, f = 1 kHz) 2N1705 --- 30 -.• -
(IC = 10 rnA, VCE = -5 V, f = 1 kHz) 2N1706, 2N1707 --- 4.0 ---
(Ie = 1 rnA, VCB = -6 V, f = 1 kHz) 2N1705 h rb --- 3.0 --- Xl0- 4
(IC = 10 rnA, VC = -5 V, f = 1 kHz) 2N1706 h re --- 0;69 --- )nO- 3
2N1707 h rb --- 4.5 --- Xl0- 4
Frequency Cutoff fab MHz

(IC = 1 rnA, VC = -6 V) 2N1706, 2N1707 --- 3.0 ---
2N1705 --- 4.0 ---
(IC = 1 rnA, VCB = -6 V, f = 1 MHz) --- 20 ---
Noise Figure NF dB
(IC = 1 rnA, VC B = - 6 V, R s = 1 K, f = 1 kHz) 2N1705 --- 6.0 ---
2N 1708 (SILICON)
\
CASE 26
(TO-.oI6)
NPN silicon transistor designed for very high-
speed, low-power saturated switching applications for
computers in military and industrial service.
Collector electrically
connected to case
MAXIMUM RATINGS
Total Device Dissipation @ TA = 25"C PD 300 mW

Total Device Dissipation @ TC = 25°C PD 1.0 Watt

Operating Junction Temperature TJ +175 "C
Storage Temperature Range Tstg -65 to +200 °C
5000
V"o-_J,iIN-....- - H
r::>.,----p--o Your
---
rz-
FIGURE 1 - TURN·ON AND TURN·OFF TIME TEST CIRCUIT
V"
-10%
~1O%
V"
l_l __
I
(NOTE 2) 270
t~ I INPUT WAVE FORMS I I...
5000 V"= +20V I I V,,=-20V
V,,= -3.3 V I I V.. = +17V
!S}
--t
I
I
Vou,
I
I
I
90%-
I
I'
I 90%- NOTE 3 - - 1""-.t
I-tM-l t-t...-t
OUTPUT WAVE FORMS
50
NOTE 1, With cerlain types of power supplies, it may be necessary 10 connect
25 ~F decoupling capacitors across Ihe power·supply terminals for Vee and VD.
+
NOTE 2, Input voltage (V,,) obtained from a pulse generator having an output impedance
Vn(NOTE 1) Vee = 3 V(NOTE I) of 50 ohms. V" rise lime ~ 1.0 ns, pulse duralion "" 300 ns, and duty factor
~2.0%.
NOTE 3, Input and output waveforms, shown above, monitored by means of an oscilloscope
having a rise time ~ 0.5 ns, input capacilance of probe ~ 2.5 pF wilh shunt
resistance ~ 3000 ohms.
2-211
2N1708 (continued)
ELECTRICAL .CHARACTERISTICS (T. = 2S'C "'e.. otherwisenot.d)
characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
co'nector-Emitter Sustaining Voltage*
(IC = 10 mAde, IB = 0)
BV CEO(sus)
. 12 -
Vde

(IC = 100 ).LAde, IE = 0) 25 -
(IE = 100 ).LAde, IC = 0) 3.0
Collector-Cutoff Current I CEX /lAde

(V CE = 10 Vde, V BE = 0.25 Vde, T A = 100°C) - 15

(V CB = 15 Vde, IE = 0) - 0.025
(V CB = 15 Vde, IE = 0, TA = 150?C) 15
ON CHARACTERISTICS
DC Current Gain'" hFE -
(IC = 10 mAde, VCE = 1. 0 Vde) 20 -
Collector-Emitter Saturation Voltage VCE(s.t) Vde
(IC = 10 mAde, IB = 1. 0 wAde) - 0.22
(IC = 50 mAde, IB = 5.0 mAde) - 0.35
Base-Emitter Saturation Voltage VBE(s.t) Vde

(IC = 10 mAde, IB = 1. 0 mAde) 0.7 0.9
Current-Gain-Bandwidth Product IT MHz
(IC = 10 mAde, VCE = 10 Vde, 1= 100 MHz) 200 -
(V CB = 10 Vde, IE = 0, I = 140 kHz) - 6.0
Turn-On Time (Figure I) t ns

on
(I C = 10 mAde, IBI = 3. 0 mAde, IB2 = 1. 0 mAde) - 40
Turn-Off Time (Figure 1) toft ns

(V CC = 3. 0 Vde, IC = 10 mAde, IBI = 3.0 mAde, IB2 = 1. 0 mAde) - 75
Storage Time (Figure 2) t ns

s
(I C = 10 mAde, IBI = IB2 = 10 mAde) - 25
* Pulse Test: Pulse Length;::; 6.0 ms, Duty Cycle ~ 30%.
FIGURE 2 - STORAGE TIME TEST CIRCUIT

890
V~,
PULSE
GENERATOR
4\ 0}_10%
(NOTE 21 VOLTAGE
V'" 91 . : "---IOV
(NOTE 2) (V,"I
500
'-__-'I~===__--"'"..... TIME
I (NPUT WAVE FORM
I
~
OUTPUT
VOLTAGE
IV...I
I-t,..,
'---......"O"'UT"'PU"'T"'W"'A"'VE--:F"'OR"'"M,--- TIME
NOTE 1: Input voltage (V,n) obtaiMd from pulse generator
V.. ~ II V(NOTE 11 Veo = 10 V(NOTE 11 having an output impedance of 50 ohms. V,n rise
time < 1 ns, pulse duration ~ 300 ns, and duty
factor ~ 2.0%.
NOTE 2: Input and output wave forms monitored by means

of an oscilloscope having a rise time ~ 0.5 ns;
input capacitance of probe ~ 2.5 pF with shunt
resistance ~ 1000 ohms.
2N1711
For Specifications, See 2N718A Data.
2-212
2N 1724 (SILICON)
2N1725
NPN silicon power transistors designed for switch-

ing and amplifier applications.
CASE 9
(TO-61)
MAXIMUM RATINGS

Collector-Emitter Voltage VCE 80 Vdc
Collector Current (Continuous) IC 5_0 Adc
Power Dissipation PD 117 Watts
Thermal Resistance I Junction to Case UJC 1.5 °C/W
Junction Operating Temperature Range TJ -65 to +200 °c
2-213
Emitter-Base Cutoff Current mAdc

(VEB =9 Vdc) 2N1725 ~BO - - 0.5
(VEB = 10 Vdc) - - 10.0
Collector-Emitter Cutoff Current ICES mAdc

(V CE = 60 Vdc, VBE =0) - - 1.0
(V CE = 60 Vdc, VBE = 0, TC = 150°C) - - 2.0
(V CE = 120 Vdc, VBE = 0, TC = 150° C) - - 10.0
(V CB = 3 Vdc, ~ = 0) - - 0.1
Collector-Emitter Sustaining Voltage VCEO(sus) Vdc

(IC =200 mAdc, IB = 0) 80 - -
DC Current Gain hFE
(V CE = 15 Vdc, IC = 2 Adc) 2N1724 20 40 90
2Nl725 50 90 150
(V CE = 15 Vdc, IC =2 Adc, TA = _55 0 C) 2N1724 12 - -
2N1725 25 - -
(V CE = 15 Vde, IC = 0.1 Adc) 2N1724
2N1725
20
50
-- -
-
(Ic = 2 Adc, IB = 200 mAdc) 0.5 1.0

(IC = 2 Adc, IB =200 mAde) 1.2 2.0
High Frequency Current Gain hfe

(VCE = 15 Vde, IC = 0.5 Adc, f = 10 MHz) 1.0 1.6 -
Common Base Output Capacitance Cob pF
(VCB = 10 Vdc, f =O. 1 MHz) 260 550
Switching Times itS

(IC = 2 Adc, IB1 = -IB2 = 0.2 Ade)
De lay time plus Rise time td + tr - 0.15 -
Storage time t
s - 1.3 -
Fall time tf 0.14
2-214
2N 1724, 2N 1725 (continued)
120
Ul
...............
i 100
~
.S" 80
~
.S'
'"
~ i'-.
is'"
60
...<l> --........ ~
~ 40
0 -...........
~
P-
o 20 -.....
~200
P-
o
o 25 50 75 100 125 150 175
o
T C' Case Temperature ( C)
1 ms 0.5 ms
10 250
5.0 /1S
0. t=nc or 1ess
8 .7' '\.
.$ 5 ms ....... ~ 'l\ / FIGURE 2 - 2N1724, 2N1725
...., 1.0
"......
<l>
0.5
::l In using these curves the average power derating
U curve (Fig. 1) must be observed to ensure oper-
... 'I ation below the maximum junction temperature •
.8 0.1
~" 0.05
'0
u
0.01
o 30 60 90
Collector-Emitter Voltage (Volts)
FIGURE 3 - DC CURRENT GAIN versus COLLECTOR CURRENT
----
100
~
;- 2N1725 - r---. I".....
80 ............
.~ " r"
""a 60 'too..
------
<l>
...'" r--..
U
~
::l
Ii<
..:::
40
20
2N1724
- -- r--
i'"
r... r--- to.......
0
0.1 0.2 0.3 0.4 0.5 0.8 1.0 2.0 3.0 4.0 5.0 8.0 10
I C ' Collector Current (Amp)
2N1742
2-215
2N 1751 (GERMANIUM)
PNP Germanium power transistor designed for high-
current switching applications requiring low saturation
voltages, short switching times and good sustaining
voltage capability.
• Alloy-Diffused Epitaxial Construction
CASE 3A
(T0-3 modified) • Low Saturation Voltages -
VCE(sat) = 0.3 Vdc (Max) @ IC = 20 Adc
VBE(sat) = 0.7 Vdc (Max) @ IC = 20 Adc
MAXIMUM RATINGS
!l<Emitter-Base Voltage VEB 2.5 Vdc
*Collector Current - Continuous IC 25 Adc
Base Current - Continuous 5.0 Adc

~
Total Device Dissipation @TC = 25°C PD 106 Watts
Derate above 25°C 1. 25 W/oC
'* Operating and Storage Junction T J , Tstg -65 to +110 °c
Temperature Range
*Thermal ReSistance, Junction to Case 9JC 0.8 °C/W
18(off)_ 0.25 mH
-
*Ra
Rl = 1.0 Ohm, 20 Watts R5: Ie Adjust@ VeE = Vz
R2 = 10, Ohms, 2.0 Watts Ie
Ra = 0.1 Ohm,1.0% 81: Adjust for IB(on) = 10 18(on)
R4 s 0.04 Ohm B2 = 2.0 Vdc, Adjust for IB(oft) = 0.2 Adc
8a=12Vdc 50W
***vz
*Not required if current probe is used to read 18
"PRF'>'SO Hz
"'Zener selected to establish Sustaining Voltage.
Adjust input pulse width for Ie = 25 A condition.
2-216
2N1751 (continued)
OFF CHARACTERISTICS
(IC = 100 mAdc, IB = 0) 60 -
Collector-Emitter Sustaining Voltage (See Figure 1) Vdc
VCE(sus)
(IC = 25 Adc) 45 -
"Floating Potential VEBF Vdc
(VCB = SO Vdc, ~ = 0) - 1.0

(VCE = SO Vdc, ~E = 50 Ohms) - 50
Collector Cutoff Current ICES mAde

(VCE=SOVdc, VBE=O) - 5.0
Collector Cutoff Current I CBOl /.lAde

(V CB = 2.0 Vdc, ~ = 0) - 200

"(VCB = SO Vdc, ~ = 0) - 5.0
(V CB = SO Vdc, IE = 0, TC = 100·C, +0, -3· C) - 25
mAdc
• Emitter Cutoff Current ~BO
(VEB = 2.5 Vdc, IC = 0) - 50
ON CHARACTERISTICS
* DC Current Gain hFE -
(IC = 20 Adc, VCE = 1. 5 Vdc) 30 90

VCE(sat)
(IC = 20 Adc, IB = 2. 5 Adc) - 0.3

(IC = 20 Adc, IB = 2. 5 Adc) - 0.7
SMALL-SIGNAl. CHARACTERISTICS
• Common-Base Cutoff Frequency fab MHz
(Ic = 0.5 Adc, VCB = 10 Vdc) 1.5 -
"Small-Signal Current Gain hfe -
(IC = O. 5 Adc, VCE = 6.0 Vdc, f = 30 kHz) 20 -
Rise Time
(Ic = 25 Adc, ~(on) = 2. 5 Adc,
t
r - 12 /.IS
Storage Ti me
~(off) = 2. 5 Adc)
t
s - 10 /.IS
Fall Time
(See Figure 2)
tf - S.O /.IS
*Indlcates JEDEC Registered Data.

1.1
SCOPE O-.......--JV'\I'Ir-----.
PU LSE WI OTH = 50 /.IS Adj for

OUTY CYCLE = 10% IB(on)= 2.5 A
.. 12V la(off)-
PULSE Adj for IB(off)

0.7 -0.1
IB(on)
= 2.0 V
TUT
",28 V
Adj
IC = 25 A
GENERATORo-_ _ _ _ _ _~~-------~--=-2.-5_A_ _ __4------~

2N 1842 thru 2N 1850 (SILICON)
CASE~
Industrial-type, silicon controlled rectifiers in a stud package
with current handling capability to 16 amperes at junction
temperatures to lOOOC. MCR equivalents available in TO-48
\ package - i.e. - 2N1842 available in T048 package as MCR1842.
MAXIMUM RATINGS <TJ = lOO'C unless otherwise noted)

Peak Reverse Bloclting Voltage* VRSM(rep)* Volts
2N1842 25
2N1843 50
2N1844 100
2N1845 150
2N1846 200
2N1847 250
2N1848 300
2N1849 400
2N1850 500
Peak Reverse Bloclting Voltage VRSM(non-rep) Volts

(Transient) 2N1842 35
(Non-Recurrent 5 ms max.) 2N1843 75
2N1844 150
2N1845 225
2N1846 300
2N1847 350
2N1848 400
2N1849 500
2N1850 600
Forward Current RMS IT(RMS) 16 Amp

Circuit Fusing ConSiderations J2t A2 s

(TJ = -40 to +100~C, t ;;; 8.3 ms) 60

(One Cycle, 60 Hz, TJ = -40 to +1000 C) 125
Peak Gate Power - PGM 5.0 watts
Average Gate Power PG(AV) 0.5 Watt
Peak Gate Current - IGM 2.0 Amp
Peak. Gate Voltage - Forward VGFM 10 Volts

Reverse VGRM 5.0

*VRSM(rep) for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage.
2-218
Peak Forward Blocking Voltage* VDRM* Volts

(T J = lOOoC) 2N1B42 25 - -
2N1B43 50 - -
2N1B44 100 - -
2N1B45 150 - -
2N1B46 200 - -
2N1B47 250 - -
2N1B4B 300 - -
2N1B49 400 - -
2N1B50 500 - -
Peak Forward or Reverse Blocking Current IDRM rnA
(Rated VFOM or VROM gate open, T J = lOOOC) IRRM - - 6.0
Gate Trigger Current (Continuous dc) IGT rnA

(Anode Voltage = 7 Vdc, RL = 50 Q) - 15 BO
Gate Trigger Voltage (Continuous dc) VGT Volts

(VORM = Rated V, RL = 50 n, TJ = 100°C) VGNT 0.3 - -
Holding Current IH rnA
Forward On Voltage VTM Volts
(IF = 16 Adc) - 1.1 1.8
Turn-On Time (td + t r ) tgt f1.S

(IG = 50 rnA, IF = 10 A) - 1.0 -
Turn-Off Time tq f1.S
(IF = 10 A, IR = 10 A; dvldt = 20 Vlp.s, T J = 100°C) - 25 -
(VORM = rated voltage)
Forward Voltage Application Rate dv/dt vi f1.S

(Gate open, T J = lOOoC) - 30 -
Thermal ReSistance (Junction to Case) 9JC - 1.0 2.0 °c/w
*VORM for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative voltage.
2-219
MAXIMUM ALLOWABLE
FORWARD GATE CURRENT
IGM =2AMP FORWARD CONDUCTING CHARACTERISTICS
2.0 ....... --""'-T-. Ii:
:IE 100
I 5
2.0 VOLTS >- 50 f--TYPiCAl
1.0 GATE VOLTAGE
REQUIRED TO 1il 7 //
Ii: 0.5 TRIGGER ALL UNITS ~ 20 // MAXIMUM
:IE I
AS A TRIGGER CIRCUIT DESIGN CRITERIA a 1/
5
>- ~ ~ I ALL UNITS WILL TRIGGER AT ANY VOLTAGE ~
10
I AND CURRENT WITHIN THIS AREA
1il
a:
0.2 ~~: I
< .5.0
~
a:
a 0.1
i:A.-
=~;;
_c_
I
L. _ _ _ L 80_ mATOGATE CURRENT REQUIRED
TRIGGER ALL UNIT~ _
~
2.0 -- - -TJ lOO'C
w z,..:z: '"
:::>
!I I T, 25'C
>- ::Ie!:: (IOO'C - 50 mAl :il
< (-40'C - 150 mAl 1.0
to .05
,.:
i i:
-(T, = -40 TO +tOO'C) =
V. 3.5 VOLTS
z
< NOTE, VOLTAGE OROP MEASURED ==
!E z>- 0.5 I INCH FROM BOTTOM OF CASE -
TYPICAL PEAK FORWARD < , I
.02 GATE VOLTAGE 10 VOLTS !;;
TRIGGER AREA ;!;
0.2
: II
!I 1:' 0.1
.0001 i i 1
3 4 5 6 1 8 10 0,5 1.0 1.5 2.0 2.5 3.0
VGT. GATE VOLTAGE IVOLTS) VT, INSTANTANEOUS FORWARD ON VOLTAGE IVOLTS)
0.3
=
(T, 25'C - ANODE @ 1 VOLTS)
CURRENT DERATING SUGGESTED HEAT SINK SIZES

100 10
Ii:
:IE
5
80 8
...~
>-
1il
a:
II: a:
:::>
>- 60 a 6
~ ~'
<
...co:~ 40
3
a:
~ 4
3" x 3"
'"
U
w
J
to
< I
FINS 1/16-'THICK COPPER
20 ~ WITH EMISSIVITY 90%=
> STUD MOUNTED DIRECTLY
<
DC, ItDJMt'L~8,U~.~~~,~: OR TO COPPER FIN
$'
5
MINIMUM SPACING 3/4"=
0 1:" 0
0 4 6 10
12 14 16 0 20 40 60 80 100
IT(AV), AVERAGE FORWARD CURRENT lAMP) TA• AMBIENT TEMPERATURE (OC)
2-220
2N 1842A thru 2N 1850A.(sILiCON)
Industrial-type, silicon controlled rectifiers in a stud
package with current handling capability to 16 amperes
at junction temperatures to 125°e.
MAXIMUM RATINGS (,T J = 12S'C unless otherwise noted)

Peak Reverse Blocking Voltage. VRSM(rep)* Volts
2N1842A 25
2N1843A 50
2N1844A 100
2N1845A 150
2N1846A 200
2N1847A 250
2N1848A 300
2N1849A 400
2N1850A 500
Peak Reverse Blocking Voltage VRSM.(non-rep) Volts

(Transient) 2N1842A 35
(Non-Recurrent 5 ms max.) 2N1843A 75
2N1844A 150
2N1845A 225
2N1846A 300
2N1847A 350
2N1848A 400
2N1849A 500
2N1850A 600
Forward Current RMS IT(RMS) 16 Amp

(One Cycle, 60 Hz, TJ = -65 to + 1250 C) 125
Circuit Fusing Considerations 12t A2s

(TJ = -65 to +125 0 C, t ;:; 8.3 ms) 60
Peak Gate Power - Forward PGM 5.0 Watts

Reverse VGRM 5.0

*VRSM(rep) for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage.
2-221
2N1842 A thru 2N1850A (continued)

Peak Forward Blocking Voltage. VORM* Volts

(T J ~ 125°C) 2N1842A 25 - -
2N1843A 50 -- -
2N1844A 100 -
2N1845A 150 - -
2N1846A 200 - -
2N1847A 250 - -
2N1848A
2N1849A
300
400
-- --
2N1850A 500 - -
Peak Forward or Reverse Blocking Current IORM rnA
(VORM, OR VRSM, gate open, T J = 125°C)
IRRM - - 6.0
Gate Trigger Current (Continuous dc) IGT rnA

(Anode Voltage = 7 Vdc, RL = 50 !1) - 15 80
Gate Trigger Voltage VGT Volts

(Anode Voltage = 7 Vdc, RL = 50 !1) - 0.8 2.0
(VORM = Rated V, RL = 500, T.J = 1250 e) VGNT 0.25 - -
Forward On Voltage VT Volts
(IT = 16 Adc) - 1.1 1.6
Turn-On Time (~ + t r ) ,",S

(IGT= 50 mA, IT = 10 A)
tgt
- 1.0 -
Turn-Qff Time tq ,",S
(IT = 10 A, IR ~ 10 A, dvldt = 20 vlp,s, T J = l25 0 C) - 30 -
Forward Voltage Application Rate dvldt vi /.lS
(Gate Open, T J = 125°C) - 30 -
Thermal Resistance (Junction to Case) 6 JC - 1.0 2.0 °c/w
*VORM for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero ornegative gate voltage.
2-222
2N 1842A thru 2N 1850A (continued)
MAXIMUM ALLOWABLE
FORWARO GATE CURRENT
IGM = 2 AMP
FORWARD CONDUCTING CHARACTERISTICS
2.0-rr--......,.--..... !Ii 100
~ 50
1.0
~ I //
is: '"'" 20
'"~ 0.5 a TYPICAL 1'(/ ~/ MAXIMUM
I AS A TRIGGER CIRCUIT DESIGN CRITERIA ~ 10
>-
15 0.2 I ALL UNITS WILL TRIGGER AT ANY VOLTAGE
31 5.0
I ANO CURRENT WITHIN THIS AREA
'" I :''"i:
a'" 0.1 L L 80 mA GATE CURRENT
REQUIREO Tq TRIGGER ALL UNITS '" 2.0 I / NOTINCH,VOLTAGE DROP MEASURED
FROM BOTTOM OF CASE
w
~ - - - - (~'tS~CC'::-I~~) ---
:::>
53 1.0 II
to .05 z
VGT = 3.5 VOLTS
t-' ~ 0.5
!E TYPICAL TRIGGER POINT z
PEAK FORWARD «
.02
.0001
!I
GATE VOLTAGE 10 VOLTS
VGT. GATE VOLTAGE (VOLTS)

I
9
1
10
~ 0.2
.f 0.1
0.0 0.5
i , Iii
1.0
I
1.5
=2.0
TJ
TJ
= 12SoC
= 2S'C
2.5
VT.INSTANTANEOUS FORWARD ON VOLTAGE (VOLTS)
0.25 (TJ = 25°C. ANODE @ 7 VOLTS)
CURRENT DERATING SUGGESTED HEAT SINK SIZES

140 .---r---r-....,.---.,---..----r---.---..., CURVES SHOWN ARE FOR 180' CONOUCTION ANGLE
FOR OTHER CONDUCTION ANGLES. MULTIPLY
130 CURRENT VALUES BY FOLLOWING FACTORS,
~ 125 8 1----'-_-"...._ _ _+-120· -0.91 30' - 0.58
iii=> 120 90' - 0.82
60'-0.72
DC - 1.40
I
~ 110 6 1-_ _+-_"""'~--= .....-""Ir~~~~~I~~E::g~cll,~IAg·lRMt
~ CONDUCTION ANGLE FACTOR
ill
>-
100
~ 90 FINS 1/16" THICK COPPER

..2 80
WITH EMISSIVITY =
90%
STUD MOUNTED DIRECTLY
TO COPPER FIN
DC MINIMUM SPACING 3/4" =
70~-t--~--+-~--r--+--+--~ s RESISTIVE OR INDUCTI'vE LOAD. 50 TO 400 Hz
60~ __ ~ __ ~ __ ~ __ ~ __ ~ __ ~~~~ E 0 ~FR_E_E_CO_N.lV_EC_T_IO_N_C_0.l0L_IN_G_ _.l._ _....I._ _....I.._...;;::1
o 4 10 12 14 16 20 40 60 80 100 120
IT(AV). AVERAGE FORWARD CURRENT (AMP) T•• AMBIENT TEMPERATURE (OC)
2-223
2N 1893 (SILICON)
2N240S
NPN silicon annular transistors designed for medium-

power amplifier and switching applications.
MAXIMUM RATINGS
Rating Symbol 2N1893 2N240S Unit
Collector-Emitter Voltage 100 140 Vde
VCER
Collector-Base Voltage VCS 120 Vde
Emitter-Base Voltage VES 7.0 Vde
CASE 31
(TO-5) Collector Current IC 0.5 1.0 Ade
Total Device Dissipation @ TA = 25"C PD 0.8 1.0 Watt
Collector connected
Derate above 25"C 4.57 5.71 mW/'C
to case
Total Device Dissipation @ TC - 25"C PD 3.0 5.0 Watts
Derate above 25"C 17.2 28.6 mW/'C
Operating and Storage Junction Temperature Range T J' T stg -65 to +200 'c
Characteristic Symbol 2N1893 2N240S Unit
Thermal Resistance. Junction to Case eJC 58.3 35 'C/W
Thermal Resistance. Junction to Ambient eJA 219 175 'C/W
ELECTRICAL CHARACTERISTICS (T A = 25'C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage' BVCEO(sus)
, Vde
(IC = 30 mAde, IB = 0) 2N1893 80 -
(IC = 100 mAdc, IB = 0) 2N2405 90 -
Collector-Emitter Sustaining Voltage BVCER(sus) Vdc
(IC = 100 mAde, RBE = 10 ohms) 2N1893 100 -
2N2405 140 -
(IC = 100 !LAdc, IE = 0) 120 -
Emitter- Base Breakdown Voltage BVEBO Vdc
(IE = 100 !LAde, IC = 0) 7.0 -
Collector Cutoff Current ICBO !LAde
(VCB = 90 Vde, IE ~ 0) - 0.01
(VCB = 90 Vdc, IE = 0, T A = 150"C) 2N1893 - 15
2N2405 - 10
Emitter Cutoff Current lEBO !LAdc
(VBE = 5.0 Vde, IC = 0) - 0.01
2-224
2N1893, 2N240S (continued)

ON CHARACTERISTICS
(IC = 0.1 mAde, VCE = 10 Vde) 2N1893 20 -
(IC = 10 mAde, VCE = 10 Vde) 2N1893 35 -
(IC = 10 mAde, VCE = 10 Vdc, T A = -55·C) 2N1893 20 -
(IC = 150 mAde, VCE = 10 Vde) 2N1893 40 120
2N2405 60 200
(IC = 50 mAde, IB = 5.0 mAde) 2N1893 - 1.2
(IC = 150 mAde, IB = 15 mAde) 2N1893 - 5.0
2N2405 - 0.5
(Ic = 50 mAde, IB = 5.0 mAde) 2N1893 - 0.9
(IC = 150 mAde, IB = 15 mAde) 2N1893 - 1.3
2N2405 - 1.1
(IC = 50 mAde, VCE = 10 Vde; f = 20 MHz) 2N1893 50 -
(VCB = 10 Vde, IE = 0, 100 kHz ~ f ~ 1.0 MHz) - 15
Input CllIPacitanee C ib pF
(V BE = 0.5 Vde, IC = 0, 100 kHz ~ f ~ 1. 0 MHz) 2N1893 - 85

(IC = 1. 0 mAde, VCB = 5.0 Vde, f = 1. 0 kHz) 2N1893 20 30
(IC = 5.0 mAde, VCB = 10 Vde, f = 1. 0 kHz) 2N1893, 2N2405 4.0 8.0
Voltage Feedback Ratio hrb X 10- 4

(IC = 1. 0 mAde, VCB = 5.0 Vdc, f = 1. 0 kHz) 2N1893 - 1. 25
(IC = 5.0 mAde, VCB = 10 Vdc, f = 1. 0 kHz) 2N1893 - 1.5
2N2405 - 3.0
(IC = 1. 0 mAde, VCE = 5.0 Vdc, f = 1. 0 kHz) 2N1893 30 100
(IC = 5.0 mAde, VCE = 5.0 Vde, f = 1. 0 I<Hz) 2N2405 50 275
(IC = 5.0 mAde, VCE = 10 Vde, f = 1. 0 kHz) 2N1893 45 -
Output Admittance hob p.mho
(IC = 1.0 mAde, VCB =5.0Vdc, f= 1.0 kHz) 2N1893 - 0.5
(IC = 5.0 mAdc, VCB = 10 Vde, f = 1. 0 kHz) 2N1893, 2N2405 - 0.5
(11 Pulse Test: Pulse Width ~ 300 IJS, Duty Cycle ~ 2.0%.
2-225
PNP germanium trans istors for general purpose, low-

frequency applications. Characteristics curves similar
to 2N524-2N527 series.
CASE 31(1)
(TO-5)
MAXIMUM RATINGS

Junction and Storage Temperature T J & T stg -65 to +100 °c
Power Dissipation at 25°C Ambient PD 225 mW
ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted)

Collector Cutoff Current ICBO - 10 /L Adc
VCS = -45 Vdc, IE = 0
Emitter Cutoff Current lEBO - 10 /L Adc

VEB = -25 Vdc, IC = 0
Collector-Base Voltage VCBO 60 - Vdc

IC = 200 /LAdc, IE = 0
Collector-Emitter Voltage VCEX 50 - Vdc

IC = 50/LAdc, VBE = +l. 5 Vdc, RBE = 10 K
Collector-Emitter Voltage VCER 40 - Vdc

IC = 0.6 mAdc, RBE = 10 K
Punch-Thru Voltage (VEB = 1 Vdc, VTVM Z 2.1 Megohm) Vpt 50 - Vdc
2-226

DC Current Gain hFE
IC = 20 mAdc, VCE = -1 Vdc
2N1924 34 65 -
2N1925 53 90
2N1926 72 121
DC Current Gain hFE

IC = 100 mAdc, VCE = -1 Vdc
2N1924 30 - -
2N1925 47 -
2N1926 65 -
Collector-Emitter Saturation Voltage VCE(SAT)
IB = 1.33 mAdc, IC = 20 mAdc 2N1924 50 110 mVdc
IB = 1. 0 mAdc, IC = 20 mAdc 2N1925 55 110
IB = O. 67 mAde, IC = 20 mAdc 2N1926 60 110
Base Input Voltage VSE

VCE = -1 Vdc, IC = 20 mAdc
2N1924 200 300 mVdc
2N1925 190 2190
2N1926 180 2180
Output Capacitance; Input AC Open Circuit Cob - 30 pF

VCS = -5 Vdc, IE = 1 mAdc, f = 1 MHz
Frequency Cutoff fab

VCS = -5Vdc, IE = 1mAdc
2Nl924
2N1925
1.0
1.3
-- MHz
2N1926 1.5 -
Small-Signal Short-Circuit Forward-Transfer Current Ratio hfe
VCE = -5 Vdc, IE = 1 mAdc, f = 1 kHz
2N1924
2N1925
30
44
64
88
-
2N1926 60 120
Small-Signal Open Circuit Output Admittance hoe

VCE = -5 Vdc, IE = 1 mAdc,f = 1 kHz
2N1924 15 60 p.mho
2Nl925 20 65
2N1926 25 70
Small-Signal Open-Circuit Reverse-Transfer Voltage Ratio h re

VCE = -5 Vdc, IE = 1 mAdc, f = 1 kHz
2N1924 2.0 8·.0 X10- 4
2N1925 3.0 9.0
2N1926 4.0 10
Small-Signal Short-Circuit Input Impedance hie

VeE = -5 Vdc, IE = 1 mAdc, f = 1 kHz
2N1924 700 2200 ohms
2N1925 1200 3200
2N1926 1500 4200
2-227
2N1959 (SILICON)

speed, medium-power saturated switching applications.
CASE 31
(TO·S)
MAXIMUM RATINGS

RBE = 10 ohms
Total Device Dissipation @ TA = 25°C Po 600 mW

Derate above 25°C 4,0 mW/oC
Total Device Dissipation @ T C = 25°C PD 2.0 watts

2-228
2N 1959 (continued)
ELECTRICAL CHARACTERISTICS (1, = 25·C ",... othe...;...pee;""')

OFF CHARACTERISTICS
(Ie = 50 /lAde, RBE = 10 ohms) 40 -
(IC = 100 /lAde, IE = 0) 60 -
(IE = 100 /lAde, IC = 0) 5.0 -
Collector Cutotf Current /lAde
(VCB = .30 Vdc, IE = 0)
lVCB = 30 Vdc, IE = 0, TA = 150
0
C)
IeBO
-- 0.5
300
ON CHARACTERISTICS
DC Current Gain
(IC = 150 mAde, VCE = 10 Vdc)
hFE
40 120
-
(Ie = 150 mAde, lB = 15 mAde) - 0.45
Base-Emitter Saturation Voltage VBE(sal) Vdc

(Ie = 150 mAde, IB = 15 mAde) - 1.3
Current-Gain-Bandwidth Product tT MHz
(Ic = 25 mAde, VCB = 10 Vdc, t = 100 MHz) 100 -
(VCB = 10 Vdc, IE = 0, t = 1 MHz) - 18
Turn-On Time Figure 1 ton - 65 no

Turn-Off Time (VCC = 7 Vdc, Ie = 150 mAde, tott - 45 ns
Storage Time IB1 = 1B2 = 15 mAde, ts - 25 no
*ton ' toff, and ts measured from 50% point of mput pulse.
FIGURE 1- SWITCHING TIME TEST CIRCUIT
·V.. ~-30V VDD~ -I V Vee ~ 7V
_lp.s_
IkQ 40Q
+15
INPUT
t, ,,;; 4 ns 0 - - 1 - - - - - - 4 - -
lpi IkQ /":v--o() SCOPE
-IS
INPUT
51Q t, t,
OUTPUT 10%
2-229
2N 1970 (GERMANIUM)
2N 1980 thru 2N 1982
~
pose amplifier and switching applications.
CASE 5
(T0-36)
i ~I J
MAXIMUM RATINGS
Collector- Base Voltage vCB 100 50 70 90 Volts
Collector-Emitter Voltage VCEO 50 30 40 50 Volts
Emitter- Base Voltage VEB 40 20 20 20 Volts
Collector Current IC IS Amp
Power Dissipation at TC = 25 0 C PD 170 Watts
ELECTRICAL CHARACTERISTICS (TA = 2SOC unless otherwise noted)

Collector- Base Cutoff Current mAde
ICBO
(V CB = -100 Vdc) 2N1970 - 4.0
(V CB =-50 Vdc) 2NI980 - 6.0
(V CB ,-70Vdc) 2NI981 - 6.0
(V CB = -90 Vdc) 2NI982 - 6.0
(V CB = -2 Vdc) 2N1980-2N1982 - 0.3
(V EB = -40 Vdc) 2NI970 - 4.0
(VEB = - 20 Vdc) 2N1980-2N1982 - 5.0
(V EB = - 2 Vdc) 2N1980-2N1982 - 0.3

(IC = lAde, IB = 0) 2NI970 50 -
2NI980 30 -
2NI981 40 -
2NI982 50 -
Baae- Emitter Voltage Vdc
VBE
(V CE = -2 Vdc, IC = 5 Adc) 2NI970 - 0.9

(VCB = -50 Vdc) 2NI980 - 1.0
(VCB = -70 Vdc) 2NI981 - 1.0
(VCB = -90 Vdc) 2NI982 - 1.0

VCE(sat)
(IC = 12 Adc, IB = 2 Adc) 2NI970 - 1.0
(I C = 5 Adc, IB = 0.5 Adc) 2N1980-2N1982 - 0.5

(IC = 5 Adc, VCE = -2 Vdc) 2NI970 17 40
2N1980-2N1982 50 100
(IC = 12 Adc, VCE = -2 Vdc) 2NI970 10 -
Common Emitter Cutoff Frequency kHz
he
(VCE =-4 v, IC = 5 A) 2NI970 5.0 -
(V CE =-5 V, IC = 2A) 2N1980-2N1982 3.0 -
2N1983 (SILICON)
2N1984
NPN silicon annular small-signal transistor.
CASE 31
(TO·5)
Collector connected to cas.
MAXIMUM RATINGS

Total Device Dissipation @ T A = 25° C PD 0.6 Watt

Total Device Dissipation@ TC = 25°C PD 2.0 Watts
stg
Temperature Range

Thermal Resistance, Junction to Ambient 8JA 208 °C/W
2-231
ELECTRICAL CHARACTERISTICS (T. =25'C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter SUstaining Voltage (11 Vde
(IC = 100 mAde, IB = 0)
BVCEO(sus)
25 -
Collector-Emitter Sustaining Voltage 111 BVCER(sus) . Vdc
(IC = 100 mAde, RBE ~ 10 ohms) 30 -
Collector Cutoff CUrrent I CBO /.lAde
(VCB = 30 Vde, IE = (I) - 5.0
(V CB = 30 Vde, IE = 0, T A = 150oC) - 200
Emitter-Cutoff Current lEBO /.lAde

(VEB(off) = 2.0 Vde, IC = 0) - 100
ON CHARACTERISTICS
(IC = 5.0·mAde, IB = 0.5 mAde) - 0.25
Base-Emitter On Voltage VBE(on) Vde

(IC = 1. 0 mAde, VCE = 5.0 Vde) - 0.85
Current-Gain-Bandwldth Product iT MHz
(IC = 50 mAde, VCE • 10 Vdc, f = 20 MHz) 40 -
(VCB = 10 Vde, IE = 0) - 45
Input Impedance hie kohm

(IC = 5.0 mAde, VCE = 5.0 Vde) 2N1983 - 2.0
2N1984 - 1.2
Input Resistance hlb ohm
(IC = 1.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz) 20 30
(IC = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz) 4.0 8.0

(IC = 1.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz) 2N1983 - 7.0
2N1984 - 5.0
(IC = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz) 2N1983 - 7.0
2N1984 - 5.0
(I C = 1. OmAde, VCE = 5.0 Vde, r = 1. 0 kHz) 2N1983
hre
70 210
-
2N1984 35 100
(IC = 5.0 mAde, VCE = 5.0 Vde, r = 1.0 kHZ) 2N1983 80 240
2N1984 40 120
Output Admittance
(IC = 5.0 mAde, VCE = 5.0 Vdc) 2N1983
hoe
- 200
-
2N1984 - 100
Output Admittance hob /.lmho
(IC = 1.0 mAde, VCE = 5.0 Vde, r = 1. 0 kHz) - 1.0
(IC = 5.0.mAde, VCE = 5.0 Vde, r = 1. 0 kHz) - 1.5
111 Pulse Test: Pulse Width ~ 300/.ls, Duty Cycle ~ 2.0%.
2-232
2N 1990 (SILICON)
NPN silicon transistor designed for driving neon

display tubes.
MAXIMUM RATINGS
Collector - Base Voltage VCS 100 Vdc
Total Device Dissipation TA = 25°C PD 0.6 W

Total Device Dissipation T C = 2.5° C PD 2.0 W
@T C =100°C 1.0
Operating & Storage Junction T J' T stg -65 to +150 'c

Temperature Range
Thermal Resistallce, Junction to Ambient 8JA 208 °C/W

Characteristic Symbol IMin IMax I Unit
OFF CHARACTERISTICS
Collector Cutoff Current I CEX
(V CE = 75 Vdc, IB = 10 /L Adc) - 10 /L Adc
(V CE = 75 Vdc, IB = 250 !lAdc, TA = 150° C - 250
ON CHARACTERISTICS
(IC = 30 mAdc, VCE = 10 Vdc) 20 -
VCE(sat)
(IC = 2.0 mAde, IB = 0.2 mAdc) - 0.5

VBE(sat)
(IC = 2.0 mAdc, IB = 0.2 mAde) - 1.0
2N 1991 (SILICON)
For SpeCifications, See 2N1l31 Data.
2-233
2N2042 , 2N2043 (GERMANIUM)
CASE 31(1) PNP germanium transistors suitable for high-voltage

(TO-5) audio switching and amplifier applications. Suitable for
All leads high-reliability projects.
isolated from case
MAXIMUM RATINGS

Emitter-Base Voltage V EB 75 Vdc

(Continuous)
storage Temperature Range T stg -65 to +100 °c
Collector Dissipation, Ambient PD 200 mW

Thermal Resistance (JJA 0.375 °C/mW

Thermal Resistance (JJC 0.250 °C/mW

(Junction to Case)

Collector - Base Cutoff Current I CBO I'Adc
(V CB = 105 V, IE = 0) - 25
(VCB = 2.5 V, IE = 0) - 10
(V CB = 105 V, IE = 0, TA = +71°C) - 500
Emitter-Base Cutoff Current lEBO I'Adc
(V EB = 75 V, IC = 0) - 50
(V EB = 2.5 V, IC = 0) - 10
Collector -Emitter Cutoff Current ICER I'Adc
(V CE = 55V, RBE = 10K) - 600
Collector-Emitter Cutoff Current ICES mAdc
(VCE = 105 V, VBE = 0) - 1.0
DC Collector-Emitter Punch-Through Voltage Vpt Vdc
(Vn = 1. 0 V, VTVM Rln 10-12 megohm) 105 -
(IC = 5 mA, VCE = 0.35 V) 2N2042 20 50
2N2043 40 100
Common Base, Small-Signal Input Impedance hib Ohms
(VCB = 6 V, IE = 1 mA, f = 1 kHz) 30 50
2-234
2N2042,2N2043(continued)
Characteristic Symbol Min Mu Unit
Common Base, Small-Signal Output Admittance hob ",mho

(VCB = 6 V, IE = 1 mA, f = 1 kHz) 0.1 1.0
Common Emitter, Small-Signal Current Transfer Ratio hfe -

(VCE = 6 V, IC = 1 mA, f = 1 kHz) 2N2042 20 80
2N2043 45 180
(IC = 5 mA, IB = 0.25 mAl - 0.30
Collector -Emitter Saturation Voltage VCE(sat) Vdc

(IC = 5 mA, IB = 0.25 mAl - 0.25
(IC = 100 mA, Ia = 10 mAl - 0.75
(VCB = 6 V, I
E
= 0) - 25
Common-Base, Small-Signal Forward Current fab MHz

(VCB = 6 V, IE = 1 mAl 2N2042 0.50 -
2N2043 0.75 -
POWER·TEMPERATURE DERATING CURVE LARGE SIGNAL CURRENT GAIN versus TEMPERATURE

220 - - 200
I
200 .' ='.0.25°C/mW
'\.rfJC .!!.MAX ./
e
~
180 " "- '\
180
160
Va = 0.35Vdc ./
::;
....
160
"
" "" I\. <-> 140
iz 140 °N
In
120
./L - le=5mA
--
0 120 @) ./
'\.
-
100
~ 100 ......II! -:/ I
a..
i:i =0.375°C/mW MAX .....
")... '\ 80 L- le- 5OmA
80 6", 0 .-'
Ci
.... 60 '-" '#- 60
~ 40 .....'-
-.....;\.
40
,f 20 20
00 10 20 30 40
TEMPERATURE (OC)
50 60 70 80
'"
90 100
o
-60 -40 -20 o +20 +40
TA • AMBIENT TEMPERATURE (OC)
+60 +80 +100
DC CURRENT GAIN versus COLLECTOR CURRENT COLLECTOR CURRENT versus BASE·DRIVE VOLTAGE
70 200
0; 180
/ 1/
60
Va = 1 Vd.
II!
:I! 160 I-- Vel = 1 Vd.
I,
1/ /
z 50
\ Te = 25°C
~140
Te = 25°C
2N2043/)
V
"/
:;;:
,
""
co !. 120
I 40
......... !O:
~ 100
1//
::>
<> 30
~ ::>
:;: 80
/ '/ 2N2042
- I
<> ...........
0
.i !'-. r--.. ~~3 //

20
2N201Z- t-- _
60
40 V/
10
20
.#
o ~
a0 20 40 60 80 100 120 140 160 ISO 200 o 0.2 0.4 0.6 0.8 1.0 1.2
Ie. COLLECTOR CURRENT (MILLIAMPERES) V... BASE-EMITTER VOLTAGE (VOLTS)
2-235
2N2060, A (SILICON)
2N2060 JAN,JTXAVAILABLE
2N2223,A
2N2480,A NPN silicon annular Star dual transistors for differ-
ential amplifiers and other applications requIrmg a
matched pair with a high degree of parameter uniform-
ity.
MAXIMUM RATINGS(eachside)
2N2060
2N2060A
Rating Svmbol 2N2223
2N2480 2N2480A Unit
Case 654-04 2N2223A
TO-78 Collector-Emitter Voltage VCEO 60 40 40 Vde
Collector-Emitter Voltage VCER 80 - - Vde
Collector-Base Voltage VCB 100 75 80 Vde
Emitter-Base Voltage VEB 7.0 5.0 5.0 Vde

PINS 4 AND 8 OMITIED One Side Both Sides
Pin Connections BottomView Total Device Dissipation @ TA = 25° C PD 0.5 0.6 Watt
All Leads Electrically Isolated Derate above 25°C 2.86 3.43 mW/"C
from Case Total Device Dissipation @T C = 25°C PD 1.6 3. a Watts
Derate above 25°C 9.1 17.2 mW/"C
ELECTRICAL CHARACTERISTICS (each side) (T A = 2SoC unless otherwise noted)
Characteristic Symbol IMin IMax I Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage' BV CEO , Vdc
(IC = 20 mAde, IB = 0) 2N2480,2N2480A . 40 -
(I C = 30 mAdc, IB = 0) 2N2060, 2N2060A, 2N2223, 2N2223A 60 -
Collector-Emitter Breakdown Voltage' BV CER* Vdc
(IC = 100 mAdc, RBE ;2 10 ohms) 2N2060, 2N2060A, 2N2223, 2N2223A 80 -
(IC = 100 /lAde, IE = 0) 2N2060, 2N2060A, 2N2223, 2N2223A 100 -
2N2480 75 -
2N2480A 80 -
(IE = 100 /lAde, IC = 0) 2N2060, 2N2060A, 2N2223, 2N2223A 7.0 -
2N2480,2N2480A 5.0 -
Collector Cutoff Current I CBO /lAdc.
(V CB = 30 Vdc, IE = 0, TA = 150'C) 2N2480,2N2480A - 15
(V CB = 60 Vdc, IE = 0) 2N2480 - 0.050
2N2480A - 0.020
(V CB = 80 Vdc, IE = 0) 2N2060,2N2060A - 0·002
2N2223,2N2223A - 0.010
(V CB = 80 Vdc, IE = 0, TA = 150'C) 2N2060,2N2060A - 10
2N2223,2N2223A - 15
Emitter Cutoff Current lEBO nAdc
(V BE = 5.0 Vdc, IC = 0) 2N2060,2N2060A - 2.0
2N2223,2N2223A - 10
2N2480 - 50
2N2480A - 20
'Pulse Test: Pulse Width;:; 300 /ls, Duty Cycle ~ 2.0%.
2-236
2N2060, A, 2N2223, A, 2N2480, A (continued)
ELECTRICAL CHARACTERISTICS (conti nued)

ON CHARACTERISTICS
(IC " 10 /lAdc, VCE " 5.0 Vdc) 2N2060,2N2060A 25 75
2N2223,2N2223A 15 -
(IC " 100 /lAdc, VCE " 5.0 Vdc) 2N2060,2N2060A 30 90
2N2223,2N2223A 25 150
2N2480 20 -
2N2480A 35 -
(I C " 1. 0 mAdc, VCE " 5.0 Vdc) 2N2060,2N2060A 40 120
2N2480 30 350
2N2480A 50 200
(IC " 10 mAdc, VCE " 5.0 Vdc)* 2N2060,2N2060A 50 150
2N2223,2N2223A 50 200
Collector-Emitter Saiuration Voltage Vdc
VCE(sat)
(IC " 50 mAdc, IB " 5.0 mAdc) 2N2060A - 0.6
2N2060, 2N2223, 2N2223A, 2N2480A - 1.2
2N2480 - 1.3
VBE(sat)
(I C " 50 mAdc, IB " 5.0 mAdc) 2N2060, 2N2060A, 2N2223, 2N2223A,
2N2480A - 0.9
2N2480 - 1.0
(I C " 50 mAdc, VCE " 10 Vdc, f " 20 MHz) 2N2223, 2N2223A, 2N2480,
2N2480A 50 -
2N206Q,2N2060A 60.. -
(V CB " 10 Vdc, IE " 0, f " 1. 0 MHz) 2N2060, 2N2060A, 2N2223,
2N2223A - 15
2N2480A - 18
2N2480 - 20
(V BE "0.5 Vdc, IC "0, f " 1. 0 MHz) 2N2060, 2N2060A, 2N2223,
2N2223A,2N2480A - 85
Input Impedance h. ohms
Ie
(IC " 1. 0 mAdc, V CE " 5.0 Vdc, f " 1. 0 kHz) 2N2060,2N2060A 1000 4000
2N2480A 1000 5000
(IC " 1. 0 mAdc, VCB = 5.0 Vdc, f = 1. 0 kHz) 2N2060, 2N2060A, 2N2223,
2N2223A 20 30
2N2480A 20 35
(IC " 1. 0 mAdc, VCB " 5.0 Vdc, f " 1. 0 kHz) 2N2223,2N2223A - 3.0

(IC " 1. 0 mAdc, VCE " 5.0 Vdc, f " 1. 0 kHz) 2N2060,2N2060A 50 150
2N2223,2N2223A 40 120
2N2480A 50 300
Output Admittance h /lmhos
oe
(IC" 1.0 mAdc, V CE " 5.0Vdc, f" 1.0 kHz) 2N2060, 2N2060A, 2N2480A 4.0 16
Output Admittance hob /lmhos

(Ic" 1.0 mAde, VCB " 5.0 Vdc, f" 1.0 kHz) 2N2223,2N2223A - 0.5
Noise Figure NF dB
(IC = 0.3 mAdc, VCE = 10 Vdc, RS " 510 ohms,
f " 1. 0 kHz, BW = 1. 0 Hz) 2N2480, 2N2480A - 8.0
(IC = 0.3 mAdc, VCE = 10 Vdc, RS = 510 ohms,
f = 1. 0 kHz, BW = 200 Hz) 2N2060, 2N2060A - 8.0
(IC = 0.3 mAde, VCE = 10 Vdc, RS = 1. 0 k ohm.
f = 1. 0 kHz, BW = 15.7 kHzt) - 8.0
tAmphher: 3.0 dB pomts at 25 Hz and 10 kHz with a roll-off of 6.0 dB per octave.
2-237
2N2060, A, 2N2223, A, 2N2480, A (continued)

MATCHING CHARACTERISTICS
DC Current Gain Ratio** hFE/hFE2** -
(IC = 100 J.!Ade, V CE = 5.0 Vde) 2N2060, 2N2060A, 2N2223A 0.9 1.0
2N2223, 2N2480, 2N2480A 0.8 1.0
(IC = 1. 0 mAde, VCE = 5.0 Vde) 2N2060,2N2060A 0.9 1.0
2N2480,2N2480A 0.8 1.0
Base Voltage Differential IVBE1-VBE21 mVde
(IC = 100 !lAde, V CE = 5.0 Vdc) 2N2060A - 3.0
2N2060, 2N2223A, 2N2480A - 5.0
2N2480 - 10
2N2223 - 15
(IC" 1. o mAde, VCE = 5.0 Vde) 2N2060, 2N2060A, 2N2480A - 5.0
2N2480 - 10
Base Voltage Differential Change ll(V BE l-V BE2) mVde
(IC = 100 !lAde, VCE = 5.0 Vde, T A = -55 to +25'C)2N2060A - 0.4
2N2060 - 0.8
2N2223,2N2223A - 2.0
2N2480,2N2480A - 1.2
(IC = 100 !lAde, VCE = 5.0 Vde, TA = +25 to +125'C) 2N2060 - 1.0
2N2060A - 0.5
2N2223,2N2223A - 2.5
2N2480,2N2480A - 1.5
'*The lowest hFE reading is taken as hFEl for this ratio.
2-238
PNP germanium power transistors for high-power

CASE 5 applications in high-reliability equipment.
(TO-36)
MAXIMUM RATINGS
2N2078 2N2077 2N207& 2N2075
Collector-Emitter Voltage VCEO 25 45 55 65 Vdc
Collector-Emitter Voltage VCES 40 50 70 80 Vdc
Collector-Base Voltage V CB 40 50 70 80 Vdc
Collector Current IC 15 Adc

Thermal Resistance, Junction to Case eJC 0.5 °C/W
175
~
~ 150
~!II..
z0
~
iii
125 "" ~
The maximum average power is related to maxi-
'"
mum junction temperature by the thermal resistance
c factor.
100
~ This curve has a value of 170 Walls at case tem-
"" "
peratures of 25°C and is 0 Walls at 110°C with a
~
...
~
ID 75
linear relation between the two temperatures such
that:
IIOO_Tc
~ allowable P. = 0.5
~
...c
co
50
iii!
~
c 25 "-
~
,t
0
o 10 20 30 40 50 60 70 80 90 100 110
2-239
ELECTRICAL CHARACTERISTICS (Tc = 25'C unless otherwise noted)

Characteristic Symbol Min I Max I Unit
OFF CHARACTERISTICS
(IC = 1. 0 Adc, IB = 0) 2N2078, 2N2082 25 -
2N2077, 2N2081 45 -
2N2076, 2N2080 55 -
2N2075, 2N2079 65 -
Collector-Emitter Breakdown Voltage* BV CES Vdc
(IC = 300 mAdc, VBE = 0) 2N2078, 2N2082 40 -
2N2077, 2N2081 50 -
2N2076, 2N2080 70 -
2N2075, 2N2079 80 -
(V CB = 40 Vdc, IE = 0) 2N2078, 2N2082 - 1.0
(V CB = 50 Vdc, IE = 0) 2N2077, 21"2081 - 1.0
(V CB = 70 Vdc, IE = 0) 2N2076, 2N2080 - 1.0
(V CB = 80 Vdc, IE = 0) 2N2075, 2N2079 - 1.0

(V CB = 2.0 Vdc, IE = 0) - 0.2
(V CB = VCB(max), VEB = 1. 5 Vdc) - 4.0
(VCB=VCB(max)' IE=O, T C =+71"C) - 15

(V BE = VBE(max)' IC = 0) - 4.0
(V BE = VBE(max) , IC = 0, T C =+71"C) - 15
ON CHARACTERISTICS
(IC = 1. 2 Ade, VCE = 2.0 Vdc) 2N2075 thru 2N2078 25 100
2N2079 thru 2N2082 40 160
(IC = 5.0 Adc, VCE = 2.0 Vdc) 2N2075 thru 2N2078 20 40
2N2079 thru 2N2082 35 70
(IC =5.0 Adc, VCE = 2.0 Vdc, TC = -55°C) 2N2075 thru 2N2078 15 -
2N2079 thru 2N2082 25 -
(IC = 12 Adc, VCE = 2.0 Vdc) 2N2075 thru 2N2078 8 -
2N2079 thru 2N2082 12 -
V CE(sat)
(IC= 13 Adc, IB = 2. 0 Adc) 2N2075 & 76, 2N2079 & 80 - 0.7
2N2077 & 78, 2N2081 & 82 - 0.9
(IC = 5. a Adc, VCE = 12 V:dc) - 0.9
(IC =5.0Adc, VCE =6.0Vdc)
f
Ole
5. a I- kHz
t Typ jJ.s
Rise Time r
(V CE = 12 Vdc, IC(on) = 12 Adc, I B .= 2. a Adc) 2N2075 thru 2N2078 9.0
2N2079 thru 2N2082 6.0
Fall Time tf jJ.s
(V BE = 6. a Vdc, IC(off) = 0, RBE = 10 ohms) 2N2075 thru 2N2078 12
2N2079 thru 2N2082 13
2-240
60 60
50
2N2075, ~N20r9 50 2N2076 2N2080
1
-
40 40
30 I I I
Sm. 500,.. 250~s
30
1m. 5ms Ims 500~s 250~s
~ ~ ;:
20 ....... '20
~
'\ l\. ~ ~....... r 160~s I ~ r\.
........:: 100~s
OR LESS
10 - ORLESS- f--
1"\ ~ ~~ 1\~, "~

1
O. 5
l70·WATT /
25°C CASE TEMrERAiURE
" 7' ......
/ .........
" ~
-
d~/
""
f\...
1\
\ l70.WATTI /
7
25 CASj TEMrERArE
V
"' '\
de
i\.
I)'
rl"'
,-
\.
0.5
0.4 0.4
T~
I
O. 3 1001v. 8 mA 0.3
(2NllOO ONLY) TO 80V. 8 mA
O. 2 WITH BACK BIAS APPLIED 0.2 -- ~~r1J~A~~~~~§ ~~~nEO
(iULSE tURT ONT"i-
-\ tOR P1ULSE fURVjS ONLt) -
-~\
O. 1 0 10 20 30 40 50 60 70 80 90 100 0.1
o 10 20 30 40 50 60 70 80 90 100
COLLECTOR·EMITTER VOLTAGE (VOLTS) COLLECTOR.£MITTER VOLTAGE (VOLTS)
60 60
50 2N2077,2N2081 50 2N2078. 2N2082
40 40
30
I 30 I
5ms Ims 500~s 2S0p.5 5msec Ims 500"s 250"s
20 0
'\ ~~ \ ~~ ~lOO~s
''""
100~s
OR LESS OHESS
10 10
i'-. ~ ~...
i
~
is
:i
I-
13
3
" ~
L "-
...... -, ~ 5
3
2
I'" ~ ~
l70·WATT ,-
/
" \\\
\~
"\
\.'
I
170·WATT
r- POWER DISSIPATION AT \. 1
0.5
25°1 .ASE TrPERATiR:e/
~ O. 5
de \
0.4 O.4
0.3 ~IT060v.18mA I O. 3
0.2 r-- ~~mA~~~41~~~mIED O. 2
0.1
o 10
IIFOR PU~SE CUR~ES ONL~)_
20 30 40 50
-\ 60 70
1
O. 0 10 20 30 40 50
COLLECTOR·EMITTER VOLTAGE (VOLTS) COLLECTOR·EMITTER VOLTAGE (VOLTS)
V CE limits below which the device will not go into change In these safe areas.) To insure operation
2N2075-2N2078
12 r---,----r--~----~--,---~--_, 12
10 .....--4----1-- 10 Ve•
I= J -2V //
8 8
/ /I'
~~
+8~oC
.........
6 6 +2~OC"
41----ifII''--4----I----t--i--t----l 4
-400C~
rJ
2
/. ~v
~~
/
a
0.1 0.2 D.3 0.4 0.5 0.6 0.7 a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I•• BASE CURRENT (AMPERES) V... BASE EMITTER VOLTAGE (VOLTS)
2-241
2N2019-2N2082
OL-~~~~~~~ __L-~~~__-J
0.6 o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I., BASE CURRENT (AMPERES) v", BASE·EMmER VOLTAGE (VOLTS)
2N2096 (GERMANIUM)
2N2097
For Specifications, See 2N12 04 Data,
2N2099
2N2100
2-242
PNP germanium industrial power transistors for

driver applications in high reliability equipment.
CASE 11 CASE 4-04

(TO-3) (TO-41)

devices MP2137,A etc. (TO-41 package)
MAXIMUM RATINGS
Apply also to standard, non-A series
2N2137A 2N2138A 2N2139A 2N2140A 2N2141A

Rating Symbol 2N2142A 2N2143A 2N2l44A 2N2145A
Unit
2N2146A
Collector-Emitter Voltage VCES 30 45 60 75 90 Vdc
Emitter-Base Voltage VEB 15 25 30 40 45 Vdc
Total Device Dissipation

@ TC; 25°C Pn 70 Watts
Operating and Storage Junc- °c

T J , T stg -65 to +110
tion Temperature Range
2-243
*Characteristics apply also to corresponding, non-A type numbers.
Characteristic Symbol Min I Typ I Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage** BVCEO** Vdc
(IC = 500 mAdc, IB = 0) 2N2137A,2N2142A* 20 - -
2N2138A,2N2143A* 30 - -
2N2139A,2N2144A* 45 - -
2N2140A,2N2145A* 60 - -
2N2141A,2N2146A* 65
Collector-Emitter Breakdown Voltage** BV CES** Vdc

(IC = 300 mAdc, VBE = 0) 2N2137A,2N2142A* 30 - -
2N2138A,2N2143A* 45 - -
2N2139A,2N2144A* 60 - -
2N2140A,2N2145A* 75 - -
2N2141A,2N2146A* 90 - -
(V CB = 30 Vdc, IE = 0) 2N2137A,2N2142A* - - 1.0
(V CB = 45 Vdc, IE = 0) 2N2138A,2N2143A* - - 1.0
(V CB = 60 Vdc, IE = 0) 2N2139A,2N2144A* - - 1.0
(V CB = 75 Vdc, IE = 0) 2N2140A,2N2145A* - - 1.0
(V CB =90Vdc, IE =0) 2N2141A,2N2146A* - - 1.0
Collector-Base Cutoff Current I CBO mAdc

(V CB = 2.0 Vdc, IE = 0) - 0.018 0.05
(V CB = VCB(max), IC = 0, TC = +71° C) - 0.75 5.0
Collector-Base Cutoff Currentt I CB01 mAdc

(V CB = VCB(max), IE = 0) - 0.1 2.0
Emitter-Base Cutoff Current lEBO mAdc

(V BE = VBE(max)' IC = 0) - 0.08 2.0
(V BE = VBE(max)' IC = 0, TC = +71° C) - 0.5 5.0
ON CHARACTERISTICS
DC Current Gain h FEl . -
(IC = O. 5 Adc, VCE = 2.0 Vdc)t 2N2137A-2N2141A* 30 45 60
2N2142A-2N2146A* 50 70 100
(I C = 2.0 Adc, VCE = 2.0 Vde) 2N2137A-2N2141A* hFE 15 22 -
2N2142A-2N2146A* 25 33 -
VCE(sat)
(IC = 2. 0 Adc, IB = 200 mAde) - 0.12 0.5

V BE (sat)
(IC = 2.0 Adc, IB = 200 mAdc) - 0.75 1.2
Common Emitter Cutoff Frequency
(IC = 2.0 Ade, VCE = 6.0 Vdc)
**Sweep method: 1/2 cycle sine wave, 60 Hz .
2-244

70 ..........
60 r--..... ........
50
r....... t- ()JC = 1.2°C/W, MAX
r-..... ~
40 .........
30
r--.....
r-.... ~
20
10
o
-- r-.... . . r-.... ~
25 50 75 100 125
Tc, CASE TEMPERATURE (OC)
2N2137. A; 2N2142. A 2N2138. A; 2N2143. A

FIGURE 2 - ACTIVE REGION 3
\ 1\ 1\\1\ y 5001'5
I \ 1\.~ ~ J
500tS
The active region safe operating

area curves indicate le·VeE limits 2
~ \
5ms ~ \ """-OR2501'S
LESS
1\ 5ms
t\ ~ r~~~rs~
R\l\ ~~
to be observed in order to avoid
secondary breakdown. (Secondary
Ims) \ lms
breakdown is independent of tem- 1\
perature and duty cycle.) These
curves do not define operation in dcr'\l\ dC~ 1\
the avalanche region. To insure
1
1\
I~ f\
operation below the maximum
junction temperature, power de-
rating must be observed for both
i'..
steady state and pulse conditions.
0
"-
10 20 30 10 20 30 40 50
VeE, COLLECTOR-EMITTER VOLTAGE IVOLTSI
2N2139.A; 2N2144. A 2N2140.A; 2N2145.A 2N2141.A; 2N2146.A

3
\ \ t\\~ 1'\f\\
"1
~~ v
2
\, 5ms~ ~ i--
5001'5
1
250 1'$-
5ms-
f\\,~
5001'5
i
~~~ts~-
J ~ (\
5ms
5001'5
I
2501'S I--
~ ~ "~
OR LESS
OR LESS
1ms- 1\ 1ms-
1\ 1ms l-
~~
dC~ ~
\
dc~1 ~~ '\
!\
1
dC----r---"
f\-. 1\ i 1\ ......... ~l I l' "
~
I'--- t--- ~
O
10 20 30 40 50 60 70 0 10
I
20 30 40
j"--.. t -
50 60
~
70 80 0 10 20 30
I
40 50 60 70 80 90 100
VeE, COLLECTOR-EMITTER VOLTAGE IVOLTS)
2-245

FIGURE 3 - TRANSCONDUCTANCE FIGURE 4 -INPUT ADMITTANCE
(All TYPES) (2N2137A-2N2141A,2N2137-2N2141)
3.
o J . /V/
200 / / /
2.O~ VeEi2V 100 V ,/ /
./ / 1/ = VeE 2V
i 1.0
TJ-IOO·C/
J ~
0
/
-
is
~
l5 O. S
/ I
TJ 2S· C
i
~
20
10
TJ
I--TJ - 2S· C /
100· /
"/ IY V
/ / TJ S·C
~_o: :l 0.3 J TJ~ -ss·c ~

S.0
.9 0.2 V / I II / L
J /
V
/ 2.0
/ ,
O. I / / I I
o 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0
V,~ BASE-EMITTER VOLTAGE IVOLTS) V... BASE-EMITTER VOLTAGE IVOLTS)
FIGURE 5-INPUT ADMITTANCE FIGURE 6 - NORMALIZED DC CURRENT GAIN

(2N2142A-2N2146A,2N2142-2N2146) (All TYPES!
200 3. 0
100 F=~eE 21v / / / 2.0

_TJ , lOOT -- .......
VeE 2V
50
TJ -IOO·C/
/
1/
/
/
/
/
/
TJ - -SS·C ~
is
1. O_TJ
-TJ
25·
SS·C
-
~ o. 5 " ::-...
~ 5.0 T 25· C j 0: 3 ""'....
O.2
2.0 / / I
/ I I O. I
0.2 0.4 0.6 0.8 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0
V... BASE-EMITTER VOLTAGE IVOLTS) Ie. COLLECTOR CURRENT lAMP)
FIGURE 7- SATURATION REGION FIGURE 8 - SATURATION REGION

(2N2137A-2N2141A,2N2137-2N2141) (2N2142A-2N2146A, 2N2142-2N2146)
3.0 3.0
160 100
140 90
,.0:: 120 80
:$ 100
80
~ 70
60
iB 60
is
~
B
50
40
I
.9
40
I, -'20'mA
~
~
8
.9
30
20
1,-IOmA
0.3 0.4 0.5 0.3 0.4 O.S

Ve~ COUECTOR-EMITTER VOLTAGE IVOLTS) VeE. CQLLECTOR-EMITTER VOLTAGlIVOLTS)
2-246
INPUT & TRANSFER CHARACTERISTICS

BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT DC CURRENT TRANSFER RATIO versus COLLECTOR CURRENT
All Types
1.2 100
VeE:::: 2V VCE = 2V
90
1.0
80
\
~
o '" 70
S
\
2: 0.8
w
'"~ '"w 60
, r'\. 2N2142A·2N2146A -
"'
~
'">
e:i 0.6
,.-
z
~
.... 50
/
~ r-.... /
~
"
~
V
i
~~ 0.4
V
./ ~
<.>
'"
~
40
30
/
~
...............
--
r--..
"-- -
0.2
/ 20
L 2N2137A· 2N2141A
f 10
o o
o o
Ie. COLLECTOR CURRENT (AMPS) Ie. COLLECTOR CURRENT (AMP)
2N2152 thru 2N21 54 (GERMANIUM)

2N21 S6 thru 2N21 58
PNP germanium power transistors for high-power,

CASE 5 high-gain applications in high-reliability industrial
(T0-36) equipment.
MAXIMUM RATINGS
2N2152 2N2153 2N2154
Collector Current IC 30 Adc

Thermal Resistance, Junction to Case 0.5 °C/W

°JC
2-247
2N2152 thru 2N2154 2N2156 thru 2N2158 (continued)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage * BVCEO* Vdc
(IC ~ 1. 0 Adc, IB ~ 0) 2N2152,2N2156
2N2153,2N2157
30
45
-- -
-
2N2154,2N2158 60 - -
Collector-Emitter Breakdown Voltage * BV CES * Vdc
(Ic~ 300mAdc, VBE~ 0) 2N2152,2N2156 45 - -
2N2153,2N2157 60 - -
2N2154,2N2158 75 - -
(V CB ~ 45 Vdc, IE ~ 0) 2N2152,2N2156 - - 1.0
(V CB ~ 60 Vdc, IE ~ 0) 2N2153,2N2157 - - 1.0
(V CB ~ 75 Vdc, IE ~ 0) 2N2154,2N2158 - - 1.0

(VCB~ 2V, IE~ 0) - 0.08 0.2
(V CB ~ 45 Vdc, IE ~ 0) 2N2152,2N2156 - 0.9 4 .. 0
(V CB ~ 60 Vdc, IE ~ 0) 2N2153,2N2157 - 0.9 4.0
(V CB ~ 75 Vdc, IE ~ 0) 2N2154,2N2158 - 0.9 4.0
(VCB ~ VCB{max)' IE ~ 0, TC ~ 71 °C) - 4.0 15

(V BE ~ 25 Vde, IC ~ 0) - 0.2 4.0
(V BE ~ 30 Vdc, IC ~ 0) - 0.2 4.0
(V BE ~ 40 Vdc, IC ~ 0) - 0.2 4. 0
(VBE~ VEB{max)' IC~ O,TC~ 71 o C) - 2.7 15
ON CHARACTERISTICS
(IC ~ 5.0 Adc, VCB ~ 2 Vde) 2N2152,2N2153,2N2154 50 75 100
2N2156, 2N2157, 2N2158 80 105 160
(IC ~ 15 Adc, VCB ~ 2 Vdc) 2N2152, 2N2153, 2N2154 25 47 -
2N2156, 2N2157, 2N2158 40 63 -
(IC ~ 25 Ade, VCB ~ 2 Vde) 15 38 -
Collector-Emitter Saturation Voltage VCE{sat) Vdc
(IC ~ 5.0 Adc, IB ~ 500 mAdc) - 0.06 0.1
(IC ~ 25 Adc, IB ~ 2 Adc) - 0.2 0.3
Base-Emitter On Voltage V BE (on) Vde

(IC = 5.0 Ade, IB ~ 500 mAde) - 0.65 1.0
(IC ~ 25 Ade, IB = 2 Ade) - 1.0 2.0

(IC = 5.0 Ade, VCE = 6.0 Vdc)
*To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.
2-248
2N2152 thru 2N2154, 2N2156 thru 2N2158 (continued)
2N2152,2N2156 2N2153. 2N2157
........."
30 30
~' \\ ~
20
" \ \
\~ "~ ~
5ms
20
"'" 5ms
I
10
I'.... I-- 1m;
10 ~ " ~
" ~
1ms
le(MAX~
i'- ~ ~ ~ ~
5~01'S - 5001'5
~
Ie (MAX.) '"
:3
:f
:::;;
5
...
4
5
3
2N2152
_2N2156
I I / .... ,"' .\
........ ..,\\
-2501's
-+-
t'-.. 501'5 _
~
~
~ 4
~ 3
2N2153
5 i--2N2157
l'..
/ ~ ""
......... '-\'
-2501'S
'"""'l\L
~~Ol's
I
~~
"
15 OR LESS 170.JIATT I
1\\
170-WATT
§'" 2
,
g§ .2 POWER DIS.SIPATION AT t- POWER DISSIPATION AT
~
~
:::> 25°C CASE TEMPERATURE <.)
<.) OR LESS
o'"
'"o de/ E de/
~
1
~
::j
~
o<.)
o
",
<.) 0,5 0,5
0.4 0,4
0,3 0,3
0,2 0,2
0,1 0,1
o 10 20 30 40 50 o 10 20 30 40 50 60 70
COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS)

175
170
150 "r\. "\

2N2154, 2N2158 g 125 "-
30
1\\ "\ ~ ,\.
~
~ 100
'\
20
~~
"'U: ~\.
\~I\..
5ms
Ims
I __ !~ 75
'\
:3 10 '\
~ ~ r--
e5
"-
:::;;
~
15
'"'"i3
5
4
3
" ~ .....
/
de
7'
I\,"
..... ~,~\
;:xr-,."i ~ -J
500'1'5
250 l's
I
_
re 50
25
r\.
'\
"-
2
'\
~
"\ , 5°it s o
'"
I'!
~
o<.)
I- 170·WATT Y
~
OR LESS o w w ~ ~ ~ w ro
Te, CASE TEMPERATURE lOCI
~ ~ ~ ill

0.5 \, The maximum continuous power is
0,4 related to maximum junction tempera-
0.3 ture by the thermal resistance factor.
0,2 This curve has a value of 170 Watts at
case tomperatures of 250 C and is 0 Watts
0,1
o 10 20 30 40 50 60 70 80 90 at 110 C with a linear relation between
COLLECTOR-EMITTER VOLTAGE (VOLTS)
the two temperatures such that:
allowable Pn = 1100 - Tc
O. 5
2....:249
TYPICAL INPUT AND TRANSFER CHARACTERISTICS
COLLECTOR CURRENT COLLECTOR CURRENT

mlus BASE CURRENT versus BASE-EMlnElI VOLTAGE
0 30
I
Ve ,-2V Ve,-2V
5
. . . .J. . /. 5
0
2N2156-2N2~
~V- 0
/
/~VV
V
5
0 !
V
r V
2N2152 -2N2154
5
0
IAllTY~y
V
5 h 5
/
/
f
o
o u ~ M U ~ MUM
I,. BASE CURRENT (AMPS)
M
0
-V0.2 0.4 0.6 0.8
VIE. BASE-EMITIER VOLTAGE !VOLTS)
LO L2
DC CURRENT GAIN BASE CURRENT versus

Vlrsus COLLECTOR CURRENT BASE-EMITTER VOLTAGE
OJ
Ve,-2V Ve ,-2V If
0
16 1\
/
\ 0.6
7
0\ 0.5
\ , i O.4
7
~N2156 - 2N2158 ~
i3 (ALL TYPESlj
0'" ~ O. 3
~ I~ r-.. ............ /
2N21~ r-- r--- r-- O.2
40
2N2152 -
O. I
V
0 10 15
Ie. COLLECTOR CURRENT lAMP)
20 25 30
0
0.2 -V 0.4 0.6 0.8
VIE. BASE-EMITTER VOLTAGEIVOLTSI
LO L2
2N2171 FOR SPECIFICATIONS, SEE 2N381 DATA.
2-250
2N2192,A,B thru 2N2195,A,B
(s.ILlCON)
NPN silicon annular transistors for high-current

switching and amplifier applications.
CASE 31
(TO-S)
MAXIMUM RATINGS
2N2192
2N2192A
2N2192B 2N2193 2N2195
Symbol 2N2194
Rating 2N2193A 2N2195A Unit
2N2194A 2N2193B 2N2195B
2N2194B
Emitter-Base Voltage VEB 5.0 B.O 5.0 Vdc
Collector Current IC 1.0 1.0 1.0 Adc
Total Device Dissipation PD 0.8

@ 25°C Ambient Temperature
0.8 0.6 Watt
mW/oC
Derating Factor Above 25° C 4.56 4.56 3.43
@ 25°C Case Temperature • 2.8 • Watts
Derating Factor Above 25°C • 16 • mW/oC
Junction Temperature, Operating TJ -65 to +200 °c
FIGURE 1
2N2193, A, B}
Vin = 15 V, Vb = 15 V 2N2192, A, B - Vin = 7.5 V, Vb = 7.5 V
2N2194,A,B
-IV~----------~~--------~
1 pF
Scope Input:
=
R 10 Megohms
tr = 20 ns C = 11.5 pF
t, = 20 ns
Rgon = 50 n 330 pF
7V J
2-251
2N2192,A,B thru 2N2195,A,B (continued)

(IC = 100 /lAde, IE = 0) 2N2192, A, B, 2N2194, A, B
2N2193, A, B
60
80
--
2N2195, A, B 45
Collector Emitter-Open Base Sustain Voltage (It

VCEO(sus) Vde
(IC = 25 mA pulsed, IB = 0) 2N2192, A, B, 2N2194, A, B 40 -
--
2N2193, A, B 50
2N2195, A, B 25
(IE • 100 /lAde., IC = 0) 2N2192, A, B, 2N2194, A, B,
2N2195, A, B
5.0
5.0
--
2N2193, A, B 8.0 -
(VCB - 30 Vde, IE = 0) 2N2192, A, B, 2N2194, A. B
2N2195, A, B
- 0.010
0.100
---
(V CB = 30 Vde, IE = 0, T A = 150·C) 2N2192, A, B 15
2N2194, A, B 25
2N2195,A, B 50
(V CB = 60 Vde, IE • 0) 2N2193, A, B - 0.010
(V CB = 60 Vde, IE = 0, T A • 150·C) 2N2193, A, B - 25
--
(VES = 3 Vde, IC = 0) 2N2192, A, B, 2N2194, A, B 0 •.050
2N2195,· A, B 0.100
(VEB = 5 Vde, IC = 0) 2N2193, A, B - 0.050
(IC - 150 mAde, IB = 15 mAde) 2N2192 thru 2N2195
-- 0.35
0.25
2N2192B thru 2N2195B - 0.18
(Ic = 150 mAde, IB - 15 mAde)
VBE(sat) -- 1.3
Vde
DC Current Gain (It hFE -

(IC = 0.1 mAde, VCE • 10 Vde) 2N2192, A, B, 2N2193, A, B 15 -
(IC • 10 mAde, VCE = 10 Vde) 2N2192, A, B
2N2193, A, B
75
30
--
2N2194, A, B 15 -
--
(IC • 10 mAde, VCE = 10 Vde, TA = -55·C) ~N2192, A, B 35
2N2193, A, B 20
(IC - 150 mAde, VCE • 10 Vdc) 2N2192, A, B 100 300
2N2193, A, B 40 120
2N2194, A, B 20 60
2N2195, A, B 20 -
(IC • 150 mAde, VCE = 1.0 Vdc) 2N2192,
2N2193,
2N2194,
A,
A,
A,
B
B
B
70
30
15
---
2N2195, A, B 10 -
(IC = 500 mAde, VCE = 10 Vdc) 2N2192,
2N2193,
A,
A,
B
B
35
20
--
2N2194, A, B 12 -
(Ie = 1.0 Adc, VCE = 10 Vdc) 2N2192, A, B, 2N2193. A, B 15 -
(V CB = 10 Vde, IE = 0, 1=1.0 MHz) - 20
Sn",ll Signal Current Gain
IIC = 50 mA, VeE = 10V, f _20 MHz)
hIe
2.5 - -
Rise Time t
r - 70 ns
Storage Time 2N2192-94, 2N2192A-94A, 2N2192B-94B ts - 150 ns
Fall Time tl - 50 ns
(It Pulse Test: PW So 300 /lS Duty Cycle So 2%
2-252
2N2212 (GERMANIUM)
PNP GERMANIUM POWER TRANSISTORS
· .. designed for high-current SllVitching applications requiring low 10 AMPERE

saturation voltages. short SllVitching times and good collector-emitter
sustaining capability. PNP ADE GERMANIUM
POWER TRANSISTORS
• Alloy-Diffused Epitaxial Construction
• Low Saturation Voltage- 120 VOLTS
VCE(SAT) = 0_5 Vdc (Max) @IC = 5.0 Adc 102 WATTS
MAXIMUM RATINGS
~
"Collector-Emitter Voltage VCER 120 Vdc
"Collector-Base Voltage VCB 120 Vdc
"Emitter-Base Voltage VEB 1.5 Vdc
"Collector Current - Continuous IC 10 Adc
"Base Current - Continuous IB 3.0 Adc
Total Device Dissipation@ TC = 25·C PD 102 Watts

Derate above 25·C 1.2 W/"C
"Operating and Storage Junction TJ.T stg -65 to +110 ·C
Temperature Range
O~~
R
.Thermal Resistance, Junction to Case 6 JC 0.83 ·c/W
"Indicates JEDEC Registered Data_ ,...
I550MM-
==1 ~ ...
...
~rtiC.1 ~~
1 .. ffi ~.... ! ......
I
0.05 .. ~ lN1181 - I-~
C~mon
ill! I--Hli-
.... 1.0 .... '"\ 1-Hl/-'1--1I011IR
~.~t:><:~ $
1.0@
Horizontal 100W
~'-.!> >-0
'-20Hz
IC A4/i~1. 10 mH ~1180V~ ~~! ~ ~ I~ ....
,I' i"-VCEllUIl 0-150
Duty Cycle = 0.5% 10
U
----f- Push to Tast Ad/ust IB= re Collector Connected to Cue
CASE 4-04
.r. 5.0.1
7
3.0 ITO-41,
2-253
2N2212 (continued)
ELECTRICAL CHARACTERISTICS (Tc =25°e unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sreakdown Voltage SVCEO Vde
(Ic • 100 mAde, IS = 0) 60 -
Collector-Emitter Sustaining Voltage(See Figure 1) Vde
VCE(sus)
(IC = 5. 0 Ade, IS = 0) 60 -
Collector-Emitter Cutoff Current ICER mAde
(VCE = 120 Vdc, RSE = 100 Ohms) - 50
*Colleetor Cutoff Current I CEX mAde
(VCE = 100 Vdc, VBE (off) = 0.2 Vde, TC = 85·C) - 20
Collector Cutoff Current ICSO /LAde
(VCs =2.0Vde, ~=O) - 200
*(VCS = 100 Vde, IE = 0) - 2.0 mAde
Emitter Cutoff Current mAde

(VES = 0.75 Vde, IC = 0)
IESO
- 25
ON CHARACTERISTICS
*DC Current Gain
(Ic = 0.6 Ade, VCE = 1. 0 Vdc)
hFE
50 200
-
(Ic = 1.2 Ade, VCE = 1.0 Vde) 60 200
(Ic = 5.0 Ade, VCE = 2.0 Vde) 50 120
VCE(sat)
(IC = 5.0 Ade, IS = 0.5 Adc) - 0.5
*Sase-Emitter On Voltage Vde
VSE(on)
(IC = 5.0 Adc, VCE = 2.0 Vdc) - 1.0
*Small-Signal Current Gain
(IC = 0.5 Ade, VCE = 6.0 Vdc, f = 30 kHz)
Rise Time
(IC = 5.0 Ade, lSI = 0.5 Ade, IS2 = 0.5 Ade)
tr - 7.0 /Ls
Storage Time
(See Figure 2)
ts - 10 /Ls
Fall Time tf - 8.0 /Ls
*Indieates JEDEC Registered Data.
Adjust for
Ie = 5.0 A
+13.5 V
100,.. - -.....I---I~
27
PRF = 60 Hz
1 4 - ' - ' ' ' - - - 100 ,..

MR830
Input Pulse
t r• tt!!> 10 ns
2-254
2N2218I A, 2N2219I A 2N2221 I A{sILiCON)
2N2222,A, 2N5581 , 2N5582
NPN SILICON ANNULAR HERMETIC TRANSISTORS

NPN SILICON
. . . widely used "Industry Standard" transistors for applications SWITCHING AND AMPLIFIER
as medium-speed switches and as amplifiers from audio to VHF TRANSISTORS
frequencies.
• DC Current Gain Specified - 1.0 to 500 mAdc

VCE(sat) @ IC = 500 mAdc
= 1.6 Vdc (Max) - Non-A Suffix
= 1.0 Vdc (Max) - A-Suffix
• High Current-Gain-Bandwidth Product -
fT = 250 MHz (Min) @ IC = 20 mAdc - All Types Except
= 300 MHz (Min) @ IC = 20 mAdc - 2N2219A, 2N2222A,
CASE 31 (1)
2N5582 TO·5
• Complements to PNP 2N2904,A thru 2N2907,A 2N221B,A
2N2219.A
• JAN/JANTX Available for all devices
SELECTION 3UIDE
Characteristic
rr
BVeEO hFE
Device le= 10mAdc Ie = 150mAdc Ie = 500 mAdc l D.2"
rna
ji
Type Volts MinIMax Min Package o.17B DlA1 DlA
2N2218
2N2219
30
40/120
100/300
20
30
TO-5 m. I ~om Weight ~ 1.1Sgr.m
2N2221 40/120 20
30 TO-18
2N2222 100/300 30
/!
2N5581 40/120 25 o.soo
40 TO-46
2N5582 100/300 40 O.!!.!§ MIN CASE 22(1)
~
O.019 D1A
2N2218A 40/120 25 TO·1B
40 TO-5
2N2219A 1001300 40 1111. EmlulIl
2 ,~
2N2221,A
2N2221A 25 2N2222.A
40/120 3.Coliector
40 TO-18
2N2222A 100/300 40
0.100
'. Lr"
*MAXIMUM RATINGS
2N2218 2N2218A
2N2219 2N2219A 2N5581
Rating Symbol Unit
2N2221 2N2221A 2N5582
2N2222 2N2222A
Coliector·Emitter Voltage VeEO 30 40 40 Vde
I
Coliector·Base Voltage Vea 60 75 75 Vde
-I ' DDB'
~
Emitter·Base Voltage VEa 5.0 6.0 6.0 Vde

D500
Collector Current - Continuous Ie BOO BOO
2N221~:~ 2N2221 ,A 2N5581

2N2219, 2N2222,A 2N5582
BOO" mAde
CASE 26
T0-46
1_
MIN !:ill.
0019'"
Total Device Dissipation @TA =25°C Po 0.8 0.5 0.5 Watt 2N55B1
2N55B2
Derate above 2SoC 5.33 3.33 3.33 mwfle
Total Device Dissipation @TC= 2SoC Po 3.0 1.8 2.0 Watts
Derate above 250 e 20 12 11.43 mwfle
Operating and Storage Junction TJ,Tstg - - 6 5 to + 2 0 0 - °e
Temperature Range
-Indicates JEaEC Registered Data. The respective JEOEC registered

··Motorola Guarantees this Data in Addition to JEOEC Registered Data. dimensions and notes apply
2-255
2N2218,A, 2N2219,A, 2N2221 ,A, 2N2222,A, 2N5581 ,2N5582 (continued)
*ELECTRICAL CHARACTERISTICS ITA =.250 C unless otherwise noted)
OFF CHARACTERISTICS
Collector~Emitter Breakdown Voltage BVCEO Vde
(lC = 10 mAde, IB = 0) Non-A Suffix 30 -
A-Suffix,2N5581,2N5582 40 -
(lC = 10 "Ade, IE = 0) Non-A Suffix 60 -
A-Suffix, 2N5581,2N5582 75 -
(IE = 10 "Ade, IC = 0) Non-A Suffix 5.0 -
A-Suffix,2N5581,2N5582 6_0 -
Collector Cutoff Current ICEX nAde
(VCE =60 Vde, VEB(off) = 3.0 Vde) A-Suffix, 2N5581 ,2N5582 - 10
(VCB = 50 Vde, IE = 0) Non-A Suffix - 0.01
(VCB = 60 Vde, IE = 0) A-Suffix,2N5581,2N5582 - 0.Q1
(VCB = 50 Vde, IE = 0, T A = 150o C) Non-A Suffix - 10
(VCB =60Vde,IE =0, TA = 150o C) A-Suffix, 2N5581 ,2N5582 - 10
(VEB = 3.0 Vde, IC = 0) A-Suffix, 2N5581 ,2N5582 - 10
Base Cutoff Cu rrent IBL nAde
(VCE = 60 Vde, VEB(off) = 3.0 Vde) A-Suffix - 20
ON CHARACTERISTICS
(lC = 0.1 mAde, VCE = 10 Vde) 2N2218,A,2N 2221 ,A,2N5581 (1) 20 -
2N2219,A,2N2222,A,2N5582( 1) 35 -
(lC = 1.0 mAde, VCE = 10 Vde) 2N2218,A,2N2221,A,2N5581 25 -
2N2219.A,2N 2222,A,2N5582 50 -
(lC = 10 mAde, VCE = 10 Vde) 2N2218,A,2N2221,A,2N5581 (1) 35 -
2N2219,A,2N2222,A,2N5582(1 ) 75 -
(lC = 10 mAde, VCE = 10 Vde, TA = -550 C) 2N2218A,2N2221A,2N5581 15 -
2N2219A,2N 2222A,2N5582 35 -
(lC = 150 mAde, VCE = 10 Vde)(l) 2N2218,A,2N2221,A,2N5581 40 120
2N2219,A,2N2222,A,2N5582 100 300
(lC= 150 mAde, VCE = 1.0Vde)(1) 2N 2218A,2N 2221 A,2N 5581 20 -
2N2219A,2N2222A,2N5582 50 -
(lC = 500 mAde, VCE = 10 Vde)(l) 2N2218,2N2221 20 -
2N2219,2N2222 30 -
2N2218A,2N2221A,2N5581 25 -
2N2219A,2N2222A,2N5582 40 -
Collector-Emitter Saturation Voltage(l) VCE(sat) Vde
(lC = 150 mAde, IB = 15 mAde) Non-A Suffix - 0.4
A-Suffix, 2N5581,2N5582 - 0.3
(I C = 500 mAde, I B = 50 mAde) Non-A Suffix - 1.6
A-Suffix, 2N5581 ,2N5582 - 1.0
Base-Emitter Saturation Voltage( 1) VBE(sat) Vde
(lC = 150 mAde, IB = 15 mAde) Non-A Suffix 0.6 2.0
A-Suffix, 2N5581 ,2N5582 0.6 1.2
(lC = 500 mAde, IB = 50 mAde) Non-A Suffix - 2.6
A-5uffix, 2N5581 ,2N5582 - 2.0
2-256
2N2218,A, 2N2219,A, 2N2221,A, 2N2222,A, 2N5581, 2N5582 (continued)
*ELECTRICAL CHARACTERISTICS (Continued)

Current-Gain-Bandwidth P,oduet(2) IT MHz
(lC: 20 mAde, VCE : 20 Vde, I : 100 MHz) All Types, E .eept 250 -
2N2219A,2N2222A,2N5582 300 -
Output Capaeitanee(3) Cob - 8_0 pF
(VCB: 10 Vde, IE = 0, I : 100 kHz)
Input Capaeitanee(3) Cib pF
(VEB = 0.5 Vde, IC =0, I = 100 kHz) Non-A Sufti. - 30
A-Sum.,2N5581,2N5582 - 25
I nput Impedance hie k ohms
(lC = 1.0 mAde, VCE = 10 Vde, I = 1.0kHz) 2N2218A,2N2221 A,2N5581 1.0 3.5
2N2219A,2N2222A,2N5582 2.0 8.0
(lC: 10 mAde, VCE = 10 Vde, I: 1.0 kHz) 2N2218A,2N2221A,2N5581 0.2 1.0
2N2219A,2N2222A,2N5582 0.25 1.25
Voltage Feedback Ratio h,e X 10-4
IIC: 1.0 mAde, VCE = 10 Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 - 5.0
2N2219A,2N2222A,2N5582 - 8.0
(IC: 10 mAde, VCE : 10 Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 - 2.5
2N2219A,2N2222A,2N5582 - 4.0
Small-Signal Current Gain hIe -
IIC: 1.0 mAde, VCE: 10Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 30 150
2N 2219A, 2N 2222A,2N 5582 50 300
IIC: 10mAde, VCE: 10Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 50 300
2N 2219A,2N 2222A,2N5582 75 375
Output Admittance hoe jJ.mhos
(lC: 1.0 mAde, VCE : 10 Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 3.0 15
2N2219A,2N2222A,2N5582 5.0 35
IIc:10mAde,VCE:10Vde, I : 1.0kHz) 2N2218A,2N2221 A,2N5581 10 100
2N2219A,2N2222A,2N5582 25 200
Collector-Base Time Constant 'b'Ce po
II E : 20 mAde, VCB: 20 Vde, I : 31.8 MHz) A-Sullix,2N5581,2N5582 - 150
Noise Figure NF d8
(lC: 100 !lAde, VCE : 10 Vde,
RS: 1.0kohm, I : 1.0 kHz) 2N2219A,2N2222A - 4.0
SWITCHING CHARACTERISTICS (A-Suffix 2N5581 and 2N5582)

Delay Time td - 10 no
(VCC: 30 Vde, VBE(oll): 0.5 Vde,
IC: 150mAde, IBl : 15 mAde)
(Figu,e 14)
Rise Time t, - 25 no
Storage Time to - 225 no
(VCc:30Vde, IC: 150 mAde,
IBl : IB2: 15 mAde)
(Figu,e 15)
Fall Time tl - 60 no
Active Region Time Constant* * TA - 2.5 no
IIC: 150 mAde, VCE: 30 Vde)
-Indicates JEDEC Registered Data .

•• Motorola Guarantees this Data in Addition to JE DEC Registered Data.
(1 )Pulse Test: Pulse Width'S. 300 J,ls, Duty Cycle 5: 2.0%.
(2}fT is defined as the frequency at which ihfeJ extrapolates to unity.
(3)2N5581 and 2N5582 are Listed Ccb and Ceb for these conditions and values.
2-257
2N2218,A,2N2219,A, 2N2221,A,2N2222,A,2N5581,2N5582 (continued)
FIGURE 1 - NORMALIZED DC CURRENT GAIN
4.0
z 3.0 I J
CE ~ 1.0 v'_
;;:
- 1- - 1- -
--
- - -VCE=lOV_
-
-
OJ TJ=175 0C
~
f- 2.0 ,....- I I
~
r-
'" 250~
~
13
'-'
1.0
"':'i- - r l- I-- r- - r---~ - "-
'"
5l
N 0.7
:::;
«
~ 0.5 1 - -
-55 0C
- ......
i'...-- ,
0
z
~ 0.3 "" ~
'\~
."C
0.2 '\. 1'1..1'1..

0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 70 100 200 300 500
IC.COLLECTOR CURRENT (mA)
FIGURE 2 - COLLECTOR CHARACTERISTICS IN SATURATION REGION

I. 0
This graph shows the effect of base current on collector current. /30
~ 0.8 \\ TJ ~ 25°C (current gain at the edge of saturation) is the current gain of the
transistor at 1 volt. and /3. (forced gain) is the ratio of 1,/1 .. in a circuit.
~ \\
---
EXAMPLE: For type 2N2219. estimate a base current (I.) to insure
~§;
ffi
t::
0.6 \ 1""-
"-
- Ie ~ 300 rnA
saturation at a temperature of 25'C and a collector current of
150 rnA.
Observe that at I, = 150 mA an overdrive factor of at least 2.5
is required to drive the transistor well into the saturation region. From
~ o. 4 150 rnA
Figure 1. it is seen that h" @ 1 volt is approximately 0.62 of h" @ 10
volts. Using the guaranteed minimum gain of 100 @ 150 mA and
O:l \
--
10 V. /30 = 62 and substituting values in the overdrive equation.
~
.; O. 2 "- 50 rnA
we find:
/30 h,,@ l.OV 62

7J:=~ 2.5= 150/1.. 1.::::::6.0 mA
o
o 1.0 2.0 3.0 4.0 5.0
/301/3,. OVERDRIVE FACTOR
FIGURE 3 - "ON" VOLTAGES FIGURE 4 - TEMPERATURE COEFFICIENTS

1.4 +1.6
TJ = 25~C IIII
1.2 :t.> (25 0C10 175 0C)
i-"
.5 +0.8
f-
~ f--
~0 1.0
V ffi
u
eVC for VCElsal)
(-550C10 1250 C)
~
C
'"
OJ
«
~ 0.6
o.a VSE(sal) @Iclis = 10
'" §
8
w
VBE @VCE- 1.0 V
'"> '"=>
f-
-0.8
.....V
>' I 1111 ;:i
0.4
II 1I11 '"
"- eVB for VBE
1ll -1.6
,,2 II 1111 f- III J
VCE(sal)@lclla- 10 ~
o
0.5 1.0 2.0 5.0 10 20 50 ----
100 200 500
-2.4
0.5 1.0 2.0 5.0 10 20 50
III100 200 500
IC. COLLECTOR CURRENT (mA) IC. COLLECTOR CURRENT (mA)
2-258
2N2218,A, 2N2219,A, 2N2221,A, 2N2222,A, 2N5581, 2N5582 (continued)
NOISE FIGURE
VCE = 10 V, TA = 2SoC
FIGURE 5 - FREQUENCY EFFECTS FIGURE 6 - SOURCE RESISTANCE EFFECTS
6.0
5.0 r\.
"I'.
10
B.O
,, f~1.0 kHz
Ic ~ LOrnA
1
IOOpA J111
11111
J ;~~I
iii iii
:g 4.0
Ic~lOpA
:g /
6.0
~
~
""
:::>
co
1"'" Rs ~ 4.3 kll
0::
/ I
0:: 3.0
~
~
~
~
~ \ I) V
i..: II C5 4.0
z:
..: r--. ........
z: 2.0 z:
........ Ic= 100m
I'I'-r-. Rs ~ 1.0 Il
1.0
2.0
""
o
0.1 0.2 0.5 1.0 2.0 5.0 10 20
II 50 100
o
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f. FREQUENCY (kHzl R,. SOURCE RESISTANCE (k OHMSI
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 2SoC
This group of graphs illustrates the relationship between hfe and other "h" parameters
for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were
selected and the same units were used to develop the correspondingly numbered curves
on each graph,
FIGURE 7 -INPUT IMPEDANCE FIGURE 8 - VOLTAGE FEEDBACK RATIO
20 ........ 0
........ r-.,. .. 30 '\.
~ 7.0
i5
10
~ 20 "
"\
~
~ 5.0
~
~
0'
i
3.0 1
:!! 2.0
........ .......
~ 5. 0 ....
~ 2...... 1
I' ~.
"" 1"\
"
-
~ 1.0 3.0
~
0.7
O. 5
.J 2. 0
2 " r-....
O.3
0.1 0.2 0.5 1.0 2.0 5.0
"
10
r--
20
I.0
0.1 0.2 0.5 1.0
........
i"--
2.0 5.0 10 20
Ic. COLLECTOR CURRENT ImAdel Ic. COLLECTOR CURRENT ImAdel
FIGURE g - CURRENT GAIN FIGURE 10 - OUTPUT ADMITTANCE

300 200
200 - 100 J
~ ,...., ..... ~
I ~
-- ~
~ ...
I- i
~
~ 50 'f
~ ~ g
a
100
2
~ 1~
,
1 70 ~ 20
50
V
1/
../ is
.J 10 - ./ V
./
2
30 5. 0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.1 0.2 0.5 1.0 2.0 5.0 10 20
Ic. COLLECTOR CURRENT (mAdel Ic. COLLECTOR CURRENT ImAdel
2-259
2N2218,A, 2N2219,A, 2N2221 ,A, 2N2222,A, 2N5581, 2N5582 (continued)
SWITCHING TIME CHARACTERISTICS
FIGURE 11 - TURN-QN TIME FIGURE 12 - CHARGE DATA

200 10,000
5000 ~ =
10Ot\.
"\
I\v
1,@5V
'" \. I,
TJ ~ 25°C
Ie/I, ~ 10
2000
I- -
TJ 25°C
'ell,-IO
f-- - Vee = 5V(UNLESS NOTED)
I" I-'
I'\. Vee lOV ~
UNlESS NOTED ./
1000 QT, TOTALCONTRO~~
I' t..@V"loff " g CHARGE
,,2:y 1'\ ~ 500
HIGH GAIN TYPES
~
~' \ L?W GAIN TYPES
200 i---'
~
0 Vee 30V
I'
,
'.I '-'
r-- t..@V"loffl ~0
0
~ 1/ 100
,/ ~QA.ACTIVE REGIO~t:: ALL TYPES
.....
~ ~ o CHARGE
10
3.0 5.0 10 20 30 50
'r...... 100 200 300
20
3.0
I I II II
5.0 7.0 10 20 30
I
50 70 100 200 300
Ie, COLLECTOR CURRENT ImA) Ie. COLLECTOR CURRENT (mA)
FIGURE 13 - TURN OFF BEHAVIOR

300 300
........ 1 ........
.....
,-
t.
__"'t'
-
200 200
..... .......... 'ell" -10 ~
~
.....
>:
'"
... r--. .......
j
~
~
100
~
lell" = 10
.
~
>=
100 ~
lell" 20
t...
.~
::l 70 70
.....
.
:'t
!iil 50 "-
........... "<
le/l" = 20· ~ ~
Q
z:
~
50 .......
........... .....
I
t;; 30
'ell" ~ 10 .......... 4 ~
t;;
lell" = 10 .......... 4 ':::::
..:: ......... ..:: 30 K I'""
..... j
j
20 I ............ 20
LOW GAIN TYPES ........... :""'- >- 4 H GAIN TYPES
----,- TJ ~ 25°C TJ 725°IC
10 I I I 10
10 20 30 50 70 100 200 300 10 20 30 50 70 100 200 300
Ie, COLLECTOR CURRENT (mA) Ie, COlLECTOR CURRENT (mA)
FIGURE 14 - D£LAY AND RISE TIME FIGURE 15 - STORAGE TIME AND FALL
EQUIVALENT TEST CI RCUIT TIME EQUIVALENT TEST CIRCUIT
GENERATOR RISE TIME" 2.0 ns DUTY CYCLE' 2.(1)\ +JOV
l ~r~ ~O:.::.
PH" 200 n. +30 V
DUTY CYCLE = 2.(1)\
200
+16.2 V
.n'"
1.0 k
C>-">NV-...-t---f
lN916
0.5 V OSCI LLOSCOPE SCOPE
Rin> 100 k ohms -13.8 V Rin> 100 k ohms
Cin" 12pF -J.OV Cin" 12pF
RISE TIME" 5.0 ns .. 5001'.--1 RISE TIME" 5.0 ns
2-260
2N2218,A, 2N221 9,A, 2N2221 ,A, 2N2222,A, 2N5581, 2N5582 (continued)
FIGURE 16 - CURRENT-GAIN-BANDWIDTH PRODUCT AND

COLLECTOR-BASE TIME CONSTANT DATA FIGURE 11- CAPACITANCES
500 30
1111
Vel ~ 20V
f-- TA ~ 25°C
........ TJ ~ 25°C
., ~ t-- 20
..... r- ~ ~
f"-. r-- ..... 1"- I' ..... 1"-
..... "'" ~
~
Cob r-- . . .
!E 10
~
rb'Cc f--
§ 7.0 C"-
V 5.0 r--.... ,
V
10 3.0
0.1 0.2 0.5 1.0 2.0 3.0 5.0 10 20 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
Ie, COLLECTOR CURRENT (mAde) REVERSE VOLTAGE (VOLTS)
FIGURE 18 - ACTIVE-REGION SAFE OPERATING AREAS
2.0
'\. ION- This graph shows the maximum IC-VCE limits of the device
1.0
!12 o. 1
O.5
TO·5
100~~
both from the standpoint of thermal dissipation lat 25 0 C case
temperature), and secondary breakdown. For case temperatures
other than 250 C, the thermal dissipation curve must be modified
1.0 ms
~ in accordance with the derating factor in the Maximum Ratings
II: O.3 r=Tr S table.
I-TO-46
~ 0.2 To avoid possible device failure, the collector load line must
~""::>..
'"' ~
II:
o HTJ=115 0 C fall below the limits indicated by the applicable curve. Thus, for
~ o. 1 I I
Second Breakdown
Pulse Duly Cycl • .;; 10%
li:~ de certain operating conditions the device is thermally limited, and
for others it is limited by secondary breakdown.
8 0.0 1 For pulse applications, the maximum IC-V CE product indicated
- - - - - Bonding Wire limited
~ 0.05 by the dc thermal limits can be exceeded. Pulse thermal limits
- - - - Thermal Umitations@Tc 25°C
0.03 Applicable For Rated SVCEO may be calculated by using the transient thermal resistance curve
of Figure 19.
0.02
2.0 3.0 5.0 1.0 10 20 30 40
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1
TO-46
TO·5
PACKAGE ........
~ ....-: :;::::~
~ - .... i-"
9JC(I) = r(t)9JC
5
....... ~
2~ TO·18
0.0 1
10--4
II 10-3 10-1
I, TIME (s)
2N2223,A For Specifications, See 2N2060 Data.
2-261
2N2224 (SILICON)
NPN silicon annular transistor designed primarily

for high speed switching applications.
CASE 31
(TO·S)
MAXIMUM RATINGS

Total Device Dissipation @ T A = 25° C PD 0.8 W

Total Device Dissipation @ T C = 25° C PD 3.0 Watts
Derate above 25° C 20 mW;oC
Storage Temperature Range T -65 to +200 .,c
stg
FIGURE 1
470
-""""111--...,..-...,..--1
+12 Ydc 0-......
~1o%---[-
10k
I s.o Ydc
I t
I
I
~W%---F
I
I
I
OY,--_ I
-I 1-1"
L-s.oy -S.OVdc
2-262
2N2224 (continued)
ELECTRICAL CHARACTERISTICS (T A = 25"C unle" otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage BV CEO Vdc
(IC = 10 mAdc, IB = 0) 40 -
(IC = 10 /lAdc, ~ = 0) 65 -
(~ = 10 /lAdc, IC = 0) 5.0 -
Collector-Cutoff Current ICBO /lAdc
(V CB = 50 Vdc, ~ = 0) - 0.01
(V CB = 50 Vdc, ~ = 0, T A = +150°C) - 10
Emitter Cutoff Current lEBO /lAdc

(V EB =4.0VdC, IC =0) - 1.0
ON CHARACTERISTICS
(IC = 0.1 mAdc, V CE = 10 Vde) 20 -
(IC = 1. 0 mAde, VCE = 10 Vdc) 25 -
(IC = 10 mAde, VCE = 10 Vde) 35 115
(IC = 100 mAde, V CE = 1. 0 Vde) 40 120
Collector-Emitter Saturation Voltage (11 Vde

VCE(sat)
(IC = 150 mAde, IB = 15 mAde) - 0.4
Base-Emitter Saturation Voltage:(1) Vde

V BE(sat)
(IC = 150 mAde, IB = 15 mAde) - 1.3
(IC = 20 mAde, VCE = 20 Vde, f = 100 MHz) 250 -
(IC = 80 mAde, VCE = '10 Vde, f = 100 MHz) 160 -
(V CB = 10 Vde, IE = 0) - 8.0
Circuit Delay (Figure 1) tde ns

(TA = 25°C) - 15
Circuit Delay - Total Change (Figure 1) (l.tde ns

(T A = +10°C to TA ~ +25°C) - 15
(1) Pulse Test: PW ~ 300 /ls, Duty Cycle ~ 2.0%
2-263
2N2242 (SILICON)
NPN silicon annular transistors designed for high-

speed, low-power saturated switching applications.
CASE 22
(TO·1S)
MAXIMUM RATINGS

Total Device Dissipation @' T A -= 25° C PD 360 mWatts

Junction Temperature - Operating T.T -65 to +200 °c
stg
-65 to +200 °c
+ 3.0 v (Vee)
FIGURE 1 - SWITCHING TIME
TEST CIRCUIT 30
5.0 k 240 0.1 I1_F
;--.JV\I'v--._....u----1..---O seOPE
5.0k z ~ 100 k
PULSE WIDTH 96 ns 51 1.0k

PRR 120 Hz
t
...Q!!.
V BB = -4.0 V V BB = +17 V +11 V +10 V
V in = +21 V V in = -20 V
91
500
FIGURE 2 - STORAGE TIME O. 1 JlF
890
TEST CIRCUIT ,....-v~- .....~~-~-oseOPE
O. 1 JlF 500 z ~ 100 k
-IOU 62
1.0k
PULSE WIDTH 96 ns
PRR 120 Hz
2-264
2N2242 (continued)
ELECTRICAL CHARACTERISTICS (1, = 25'C unl.ss oth .... ;'. noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (11 BV CEO Vdc
(IC = 30 mAdc, ~ = 0) 15 -
Collector-Emitter Breakdown Voltage 11/ BV CER Vdc
(IC = 30 mAdc, RBE = ~ 10 ohms) 20 -
(IC = I. 0 !lAde, ~ = 0) 40 -
(IE = 10 IlAd c, IC = 0) 5.0 -
Collector Cutoff Current ICEX !lAde
(V CE = 20 Vde, VEB(Off) = 0.25 Vde, T A = 125°C) - 10
Collector Cutoff Current ICBO IlAde

(V CB = 20 Vdc, IE = 0) '- 0.1
(V CB = 20 Vdc, IE = 0, TA = 150°C) - 15

(V EB(off) = 4.0 Vdc, IC = 0) - 0.1
ON CHARACTERISTICS
DC Current G.in' (1/ hFE -
(IC = 10 mAde, VCE = I. 0 Vdc) 40 120
(IC = 10 mAdc, V CE = I. 0 Vde, TA = _55°C) 20 -
(IC = 100 mAdc, IB = 10 mAde) - 0.7
(IC = 10 mAde, IB = I. 0 mAde, TA = -55 to +125°C) - 0.3

(IC = 100 mAde, IB = 10 mAde) - 1.5
(IC = 10' mAde, IB = 1.0 mAdc, TA = 125°C) - 0.8
(IC = 20 mAde, VCE = lq Vdc, f = 100 MHz) 250 -
(V CB = 10 Vdc, IE = 0, f = I. 0 MHz) - 6.0
Turn-On Time (Figure 1) t ns

on
(V CC = 3.0 Vde, VBE (off) = +2.0 Vdc, IBI = 3.0 mAde, IC = 10 mAde) - 30
Turn-Off Time (Figure 1) toff ns

(V CC = 3. 0 Vdc, IC = 10 mAdc, IBI = 3.0 mAdc, IB2 = I. 0 mAde) - 50

s
(1) Pulse Test: Pulse Wdith =300 /lS; Duty Cycle = ~ 2%
2-265
2N2256, 2N2257 (SILICON)
2N2258 {GERMANIUM}
2N2259 (GERMANIUM)
NPN silicon and PNP germanium mesa complemen-

tary transistors for high- speed non- saturated switching
applic ations.
CASE 22
(TO-18)
Collector connected to cese
MAXIMUM RATINGS

2N2257 2N2259
Collector-Emitter Voltage VCEO 7.0 7.0 Vdc
Collector-Base Voltage VCB 7.0 7.0 Vdc
Collector Current-Continuous IC 100 100 mAdc
Total Device Dissipation @ T A = 25°C PD 300 150 mW

Total Device Dissipation @ T C = 25°C PD 1000 300 mW


Temperature Range T J , Tstg -65 to +175 -65 to +100 °c
TRANSISTOR SELECTION CHART
TYPE hFE @ Ie = 25 rnA

TYPE NPN PNP 20 40
2N2256 X X
2N2257 X X
2N2258 X X
2N2259 X X
2-266
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV CES Vdc
(IC = 100 /LAde, VBE = 0) 7.0 15 -
(Ie = 100 /LAde, ~ = 0) 7.0 15 -
(~= 100 /LAde, IC = 0) 1.0 - -
(VCB = 6 Vdc, ~ = 0) - 3.0 10
(V CB = 6 Vdc, ~ = 0, TA = 650 C) - 30 100
ON CHARACTERISTICS
(IC = 10 mAde, VCE = 1 Vdc) 2N2256,2N2258 17 30 -
2N2257, 2N2259 40 50 -
(IC = 25 mAde, VCE = 1 Vdc) 2N2256,2N2258 20 35 -
2N2257, 2N2259 40 55 -
(Ie = 10 mAde, VCE = 1 Vdc) 2N2256,2N2257 - 0.70 0.8
2N2258, 2N2259 - 0.35 0.5
(IC = 25 mAde, VCE = 1 Vdc) 2N2256,2N2257 - 0.8 0.9
2N2258,2N2259 - 0.45 0.6
Conduction Threshold Base-Emitter Voltage* VT Vdc
(IC = 200 /LAde, VCE = 1 Vdc) 2N2256,2N2257 0.5 - -
2N2258, 2N2259 0.1 - -
(IC = 10 mAde, VCE = 1 Vdc,f = 100 MHz) 2N2258,2N2259 250 320 -
(IC = 10 mAde, VCE = 15Vdc,f = 100MHz) 2N2256,2N2257 250 320 -
(V CB =5 Vdc, ~ = 0, f = 4 MHz) 2N2256,2N2257 -- 4.0 5.0
Base Resistance
(~ = 5 mAde, VCB = 2 Vdc,
2N2258,2N2259
f = 300 MHz)
.
rb
4.0 8.0
Ohms
2N2256,2N2257 - 50 100
2N2258,2N2259 - 75 125
Turn-On Time ton ns

2N2256,2N2257
See Fig. 1
- 3.0 7.0
2N2258,2N2259 - 4.0 8.0

See Fig. 2
2N2256,2N2257 - 4.0 7.0
See Fig. 1
2N2258,2N2259 - 3.0 7.0
See Fig. 2
*Base-to-emitter forward bias voltage at which transistor will be at the threshold of conduction; i. e. that
base-to-emitter voltage at which the collector current is less than or equal to the specified amount
under a given collector-to-emitter voltage condition.
2-267
FIGURE 1 - NPN SWITCHING TIME TEST CIRCUIT FIGURE 2 - PNP SWITCHING TIME TEST CIRCUIT
+3V -3V
1,,1,< I NS t" t, < I NSEC
R, "'_ SOn 1" 5#1 R, '" son
OSCILLOSCOPE OSCILLOSCOPE
< +2V n
OV;u-
-2V
lOOn
GROUNO
, 5.2 K (1, 0.7 NS)
OV.....J L.. : 5.2 K (I, <
0.7 NS)
PLANES
son SOil
GROUND
PLANE
3-150n ,,SOn 3·1501l
RESISTORS -IV RESISTORS
sOn IN A "Y" SOil
IN A "Y"
CONFIGURATION
I K I 0.05#1 CONFIGURATION
I K
-22V
I 0.05#1 I 0.05#1
+22 V
FIGURE 4 -CURRENT MODE INVERTER FOR USE WITH

FIGURE 3 - CASCADE COMPLEMENTARY GATE DIODE LOGIC PROPAGATION DELAY TIME 10 ns
"ANI)" I"M" GATES INVERTER
-lSV -lSV -3 TO "ANI)" M
I "M" GATES
I
I
I -3D
i
I
I
I
'TRANSITRON +1.5
PNP·2N2258 NPN2N2256
S3065G
FIGURE 6 - CURRE_NT GAIN'·BANDWITH

FIGURE 5 - CURRENT GAIN CHARACTERISTICS PRODUCT CHARACTERISTICSI
500r---~----~-----'---'--------'----'
TYPICAl CURV[
~ 400r
~
, -===+=-.:.::lIM::::ITc;:C::::.URY,~~I--.-
, ____ +--.._
,---------j-----j
-------------
~
'-'
'"~ 300 ."..'"
~ 250 I-"----+----c~-='""'t-.-J·-t- -------- - - j - - - - - j
12001-/-~'F__V -~I--
~ 150 1--- ------~
~
- - - - LIMIT CURVE .£
10~5----~---1~0------~--2~0--~-3~0--~40--~50- 100L---~----~----~--~--------~--~
5 10 15 20 35 50
Ie, COLLECTOR CURRENT (mA) Ie, COllECTOR CURRENT (mA)
2-268
2N 2273 (GERMANIUM)
2N2273 JAN
CASE 22 High-frequency germanium PNP transistor, de-

(TO-IS) signed for military and high-reliability industrial as
well as commercial VHF amplifier applications.
Collector connected to C8.e
MAXI MUM RATI NGS (T A = 25°C unless otherwise noted)

Collector- Emitter Voltage VCES 25 Volts
Collector-Emitter Voltage VCEO 15 Volts
Emitter-Base Voltage VEB 1.0 Volt
Total Device Dissipation@ TA = 25°C PD 150 mW

Derate above 25 ° C 2.0 mWrC
Junction Operating & Storage

Temperature Range TJ • T stg -65 to +100 °c
TABLE I - GROUP A INSPECTION (TA = 25°C unless otherwise noted)

BOTH TYPES (L TPD applies to JAN 2N2273 only)
MIL-STD-7S0 Limits
Examination or Test Method Symbol Min Max Unit LTPD
SUBGROUP 1
Visual and Mechanical Examination 2071 - - - - 5
SUBGROUP 2
Collector-Base Cutoff Current 3036 I CBO MAdc
(V CB = 12 Vdc, IE = 0) Condition D - 10
Collector- Base Breakdown Voltage 3001 BV CBO Vdc
(IC = 100/.LAdc, IE = 0) Condition D 25 -
Emitter-Base Breakdown Voltage 3026 BV EBO Vdc
(IE = 100 MAdc, IC = 0) Condition D 1.0 -
>- 5
Forward Current Transfer Ratio· 3076 hFE • 75
-
(IC = 1 mAdc, VCE = 10 Vdc) 20
Collector-Emitter Breakdown Voltage 3011 BV CES Vdc

(IC = 200/.LAdc, VBE = 0) Condition C 25 -
Small-Signal Forward Current Transfer Ratio 3306 h fe dB
(IC = 1 mAdc, VCE = 6Vdc, f=10MHz) 20 28
* Applies to MIL unit only
2-269
2N2273 (continued)
TABLE I - GROUP A INSPECTION (continued)
MIL-STD-7S0 Umits
SUBGROUP 3
Output Capacitance 3236 Cob pF
(VCB = 10 Vdc, IE = 0, f =1 MHz ) - 3.5
Base Spreading Resistance 3266 rb' ohms

(IC = 1 mAdc, VCE = 10 Vdc, f =250 MHz) - 250
'" 10
Small-Signal Forward Current Transfer Ratio*
(IC = 1 mAdc, VCE = 6 Vdc, f = 100 MHz)
3306 h fe *
2.5 -
-
Noise Figure* 3246 NF* dB
(VCB = 10 Vdc, IC = 1 mAdc,
I-
f = 10MHz, RG =50 ohms)· - 12
STANDARD UNIT ONLY

Emitter-Base Leakage Current lEBO /.IAdc
. (VEB = 0.5 Vdc, IC = 0) - 100

(IC = 100/.lAdc, IE =0) 15 -
Forward Current Transfer Ratio
(IC = 1 mAdc, VCE = 10 Vdc)
hFE
20 150
- -
Real Part of Small-Signal Short-Circuit Input Impedance Re(h ie ) ohms
(VCE = 10 Vdc, IC = 1 mAdc, f = 250 MHz) 50 250
Power Gain (See Figure 1) GpE dB

(VCE = 9 Vdc, IC = 1 mAdc, f =30 MHz) 10 30
* Applies to MIL unit only
TABLE II - GROUP B INSPECTION - JAN 2N2273 only

(T A = 25 0 C unless otherwise noted)
MIL-STO-7S0 Limits
SUBGROUP I
Physical Dimensions 2066 -- - - - 10
SUBGROUP 2
Solderability 2026 - - - -
Temperature Cycling 1051 - - - -
(Thigh = 100~~oC; 10 cycles) Condition B
). 10
Thermal Shock 1056 - - - -
(Glass Strain) Condition A
Mol sture Resistance 1021 - - - -
End POints: (Subgroups 2, 3, 5, 6, 7)
Collector -Base Cutoff Current 3036 ICBO /JAde
(VCB = 12 Vdc, IE = 0) Condition n - 20
DC Forward Current Transfer Ratio 3076 hFE -

(IC = 1 niAdc, VCE = 10 Vdc) 15 ~
2-270
2N2273 (continued)
TABLE II - GROUP B INSPECTION (continued)
MIL-STD-7S0 Limits
~
SUBGROUP 3
Shock 2016
Nonoperating
- - - -
(500 G, 1 msec, 5 blows each orientation:
Y1' Y2, Xl and Zl)
Vibration, Variable Frequency
(10 G)
2056 - - - - ~ 10
Constant Accelerating
(10,000 G)
2006 - - - -
End POints: same as Subgroup 2
SUBGROUP 4
Lead Fatigue (Note 1) 2036 -- -- - - 10
Condition E
SUBGROUP 5
High Temperature Operation (Note 2)
- - -
(T A = 70~goC)
Collector-Base Cutoff Current 3036 I CBO /lAdc

(VCB = 12 Vdc, IE = 0) - 100
10
Low Temperature Operation (Note 2) - - - -
(TA = -55±3°C)
Forward Current Transfer Ratio 3076 hFE -
(V CE = 10 Vdc, IC = 1 mAdc) 8.0 -
salt Atmosphere (Corrosion) 1041 - - - --
End Points: same as Subgroup 2 ~
SUBGROUP 6
High Temperature Life 1031 - - - - A = 10
(T = 100+5 oC) (Nonoperating)
A -0
End Points: same as Subgroup 2
SUBGROUP 7
Steady State Operation Life 1026 - - - - A= 10
(VCB = 10 Vdc, Pc = 60 mW, TA = 55~goC)
End Points: same as Subgroup 2
Note 1. Rejects from prior electrical tests from the same lot may be used for this test.
Note 2. Test measurement shall be made after thermal equilibrium has been reached at
the temperature specified.
FIGURE 1 - 30 MHzPOWER GAIN TEST CIRCUIT
120
INPUT 1.5- 47 0.47 J.'H T"
1.5-30 "PRIMARY ~ 5~ TURNS, %" LONG
SECONDARY ~ 1~ TURNS
NO. 22 WIRE, 0.0. ~ W
51 5000
-= 1000 l' 510 510 ALL RESISTANCE VALUES IN OHMS

ALL CAPACITANCE VALUES IN PICOFARADS
2-271
2N2273 (continued)
AC CURRENT GAIN versus FREQUENCY VARIATION IN DC GAIN versus COLLECTOR CURRENT
5 300
Ve.~ -6Vde
r-- t-~ le~-lmAde ,......V /"
0
L~~ooc VV ,,/
5 r\. 0 /"
\ V-V V/ V
\ V-
0
1\ ./
/ TA~25/
/
\
/ I/' ,......
VI-"
5 V-
V TA~/ V-
0
0/
!\. V
./
\
5
V' NORMALIZED AT Ie ~ -I mAde
Ve• ~ -IOVde-
\ j I
0 )0 /
1.0 2.0 5.0 10 20 50 100 200 500 1000 -1.0 -2.0 -3.0 -5.0 -10 -20
f. FREQUENCY ( MH,) Ie. COLLECTOR CURRENT (mAl
CONTOURS OF CURRENT GAIN - BANDWIDTH PRODUCT fr AND n,'C c versus COLLECTOR CURRENT
-20 600 6
\ I
~ !\. \
"IiII
5
\
\\
\
\
\ IT ~ 450 MHz V
"
"t-, Po
I
0
"- 'b'C;
t'--,.
V- --;:
.........
- r-......
.......
I"-
-
0 0
\.. ./ V
II j
1\ / / if
5 0 3
350 MHZ~OO MHz ", V
---
'\ / /' ./
/" 1
VI' ~ 6 Vde
V ~
300jH\ "-
0 2000 20
-2.0 -4.0 -6.0 -8.0 -10 -12 -2.0 -4.0 -6.0 -8.0 -10 -12
Ie. COLLECTOR CURRENT (mAdel Ie. COLLECTOR CURRENT (mAdel
2N2285 thru 2N2287

2-272
2N2288,2N2289 (GERMANIUM)
2N2290
PNP GERMANIUM POWER SWITCHING

TRANSISTORS 10 AMPERE
PNP ADE GERMANIUM

... designed for fast·switching applications requiring low saturation
POWER TRANSISTORS
voltage and excellent collector·emitter sustaining voltage capability.
40·120 VOLTS
• Alloy·D iffused Epitax ial Construction
70 WATTS
• Low Saturation Voltages-
VCE!sat) ~ 0.5 Vdc (Max) @ IC ~ 5.0 Adc
VBE!sat) ~ 1.0 Vdc (Max) @ IC ~ 5.0 Adc
MAXIMUM RATINGS

*Collector-Emitter Voltage VeER Vdc
(R BE = 100 Ohms) 40 80 120
·Collector-Base Voltage VCB 40 80 120 Vde

*Emitter-Sase Voltage VEB -0.75- Vdc
·Collector Current - Continuous IC 10- Adc
Base Current - Continuous IB _3.0_ Adc
Total Device Dissipation @ T C ::; 25 "c

*Derate above 25"C
*Operating and Storage Junction
PD
TJ,T stg
-0.833
-
70
-
-65 to + 1 1 0 -
Watts
W/oC
°c
1
~
Temperature Range
O ' 0 L050
~ATE ~~
MAX
Characteristic Max
Thermal Resistance, Junction to Case 1.2 CODE
1550 MAX
083
FIGURE t - SUSTAINING VOLTAGE TEST CIRCUIT
Vertical
0.05
Common
-
1.0
Horizontal
IS
f = 20 Hz
Duty Cycle = 0.5% 10
U Collector Connected to Case
-~- ~~.e A_d~-'lu~. ,t(jlIS"'-_-_;~

CASE llA
- - ....
st_ _ _ _ _ _-'\/l3./l0"""_ _--' (TO·31
Except Pin Diameter
2-273
2N2288, 2N2289, 2N2290 (continued)
ere = 25"C unless otherwise noted)

OFF CHARACTERISTICS
(IC = 100 mAde, IB = 0) 2N2288 30 -
2N2289 50 -
2N2290 70 -
Collector-Emitter Sustaining Voltage (See Figure 1) VCE(sus) Vde
(IC = 5.0 Ade) 2N2288 30 -
2N2289 50 -
2N2290 70 -
'Collector-Emitter Breakdown Voltage BVCER Vde
(IC = 50 mAde, RBE = 100 Ohms) 2N2288 40 -
2N2289
2N2290
80
120
--
'Collector Cutoff Current ICEO mAde
(VCE = 15 Vde, IB = 0) 2N2288 - 50
(.VCE = 25 Vde, IB = 0) 2N2289 - 50
(VCE = 35 Vde, IB = 0) 2N2290 - 50
'Collector Cutoff Current I CEX mAde
(VCE = 40 Vde, VBE (off) = o. 1 Vde, TC = lOOoC, + 0, -3.0 0 C) 2N2288 - 35
(VCE = 80 Vde, VBE (off) = 0.1 Vde, TC = lOOoC, +0, -3.0 0 C) 2N2289 - 35
(VCE = 120 Vde, VBE(off) = 0.1 Vde, TC = lOOoC, +0, -3.0o C) 2N2290 - 35
Collector Cutoff Current. ICBO !LAde
(VCB = 2.0 Vde, IE = 0) All Types - 200
,(VCB = 40 Vde, IE = 0) 2N2288 - 5. a mAde
,(V CB = 80 Vde, IE = 0) 2N2289 - 5.0
,(VCB = 120 Vde, IE = 0) 2N2290 - 5.0
Emitter Cutoff Current mAde
lEBO
(VEB = 0.75 Vdc, IC = 0) - 25
ON CHARACTERISTICS
*DC Current Gain hFE -
(IC = 2.0 Adc, VCE = 5.0 Vdc) 20 -
(IC = 5.0 Adc, VCE = 2.0 Vdc) 20 60
VCE(sat)
(IC = 5.0 Adc, IB = 0.5 Adc) - 0.5
* Base-Emitter Saturation Voltage VBE(sat) Vdc
(IC = 5.0 Adc, IB = 0.5 Adc) - 1.0
'Small-Signal Current Gain
(IC = 0.5 Adc, VCE = 14 Vdc, f = 1. 0 kHz) hfe
25 100
-
(IC = 0.5 Adc, VCE = 6.0 Vdc, f = 30 kHz) 15 -
Rise Time t - 5.0 !LS
r
IC = 5. 0 Adc, IB1 = IB2 = 1. 0 Ade)
Storage Time t
s - 7.0 !LS
(See Figure 2)
Fall Time tf - 8.0 !LS
'Indlcates JEDEC Reglstered Data. FIGURE 2 _ SWITCHING TIME TEST CIRCUIT
Adjust for
Ie = 5.0 A
Vee = -22 V
+10 V
' - - - - PRF = 60 Hz
. I nput Pulse t r • tf ~ 1 0 ns
2-274
212291, 212292 (GERMANIUM)
212293
10 AMPERE
PNP GERMANIUM POWER SWITCHING
TRANSISTORS
PNP ADE GERMANIUM
POWER TRANSISTORS
· .. designed for fast switching applications requiring low saturation
voltage and excellent collector·emitter sustaining voltage capability. 40·120 VOLTS
70 WATTS
• Alloy·Diffused Epitaxial Construction

• Low Saturation Voltages-
VCE(sat) = 0.5 Vdc@ IC = 5.0 Adc
VSE(sat) = 1.0 Vdc@ IC = 5.0 Adc
MAXIMUM RATINGS
Rating Svmbol 2N2291 2N2292 2N2293 Unit
*Collector-Emitter Voltage VCEO 30 50 70 Vdc
.Collector-Base Voltage VCS 40 80 120 Vdc
·Emitter-Base Voltage
.Cbllector Current - Continuous

VES
Ie
-- 1.5
10
-
-
Vd.
Ad.
-Base CUrrent - Continuous IS - 3.0
- Adc
T~ra:~::v,:;;~ong
-Operating and Storage Junction
TC=25"C PD
--=- 70
0.83
-
- Watts
W/"C
TJ.Tstg - -65 to + 1 1 0 - ·C
Temperature Range
Characteristic Max
Thermal Resistance, Junction to Case 1.2
-Jndicates JEDEC Registered Data.
1.171
rnf
-
1.0
IB
1=20Hz
U
Duty Cycle = O.!i'lIi 10
~--+----IJIII-------=-~
Collector Connected to Ceee
-- --=Z-~~.est ......_ _ _ Ad~!~ 0,.I B_=_~

.. _ _-,,31\o.01'v-_ _ _"
CASE11A
(TO·3)
Except Pin Diameter
2-275
ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noted)

OFF CHARACTERISTICS
(Ic = 100 mAdc, IB = 0) 2N2291 30 -
2N2292 50 -
2N2293 70 -
'Collector-Emitter Sustaining Voltage (See Figure I) Vdc
VCE(sus)
'(IC = 500 mAde) 2N2291 30 -
2N2292 50 -
2N2293 70 -
"(IC = 5.0 Ade) 2N2291 25 -
2N2292 50 -
2N2293 70 -
'Collector-Emitter Breakdown Voltage BVCER Vdc
(IC = 50 mAde, RBE = 100ohms) 2N2291 40 -
2N2292 80 -
2N2293 120 -
'Collector Cutoff Current I CEO mAdc
(VCE = 15 Vdc, IB = 0) 2N2291 - 50
(VCE = 25 Vdc, IB = 0) 2N2292 - 50
(V CE = 35 Vde, IB = 0) 2N2293 - 50
'Collector Cutoff Current I CEX mAde

(VCE = 40 Vdc, VBE(off) = 0.1 Vdc, TC = 100"C) 2N2291 - 35
(V CE = 80 Vde, VBE(off) = 0.1 Vdc, TC = 100"C) 2N2292 - 35
(VCE = 120 Vdc, VBE(off) = 0.1 Vdc, TC = 100"C) 2N2293 - 35
Collector Cutoff Current I CBO I'Adc

*(VCB = -2.0 Vde, IE = 0) All Types - 200
'(VCB = 40 Vde, IE = 0) 2N2291 - 5.0 mAde
'(VCB = 80 Vde, IE = 0) 2N2292 - 5.0
,(VCB = 120 Vde, IE = 0) 2N2293 - 5.0
Emitter Cutoff Currenl lEBO mAde

(VEB = 1. 5 Vdc, IC = 0) - 50
ON CHARACTERISTICS
*DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
40 -
-
(Ic = 5.0 Adc, VCE = 2.0 Vdc) 50 120
Collector-Emitter Saturation Voltage VCE(sal) Vdc

(IC = 5.0 Adc, IB = 0.5 Adc) - 0.5
* Base-Emitter Saturation Voltage VBE(sal) Vdc

(IC = 5.0 Adc, IB = 0.5 Adc) - 1.0
*Small-Signal Current Gain hfe -
(IC = 0.5 Adc, VCE = 14 Vdc, f = 1. 0 kHz) 50 200
(IC = 0.5 Adc, VCE = 6.0 Vdc, f = 30 kHz) 15 -
Rise Time I
r - 7.0 I's
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)
storage Time t
s
- 10 I's
(See Figure 2)
Fall Time If - 8.0 I'S
'IndIcates JEDEC RegIstered Data.
"Motorola guarantees this data in addition to the JEDEC Registered Data Shown.
VC C =-25V
r-"I/X/\r-~
PRF=6QHz
-14 V
Input Pulse MR830
t r. tf ::;;10 ns
2-276
2N2303 (SILICON)
2N2322 thru 2N2326 {SILICON}
All-diffused PNPN thyristors designed for gating

operation in rnA I p.A signal or detection circuits.
CASE 31(2)
(TO-5)
MAXIMUM RATINGS*(T J = 12S'C unless otherwise noted, Rs. = 1000 ohms)

Peak Reverse Blocking Voltage VRSM(rep) Volts
(Note 1) 2N2322 25
2N2323 50
2N2324 100
2N2325 150
2N2326 200
Non-Repetitive Peak Reverse Blocking Voltage VRSM(non-rep) Volts
(t < 5.0 ms) 2N2322 40
2N2323 75
2N2324 150
2N2325 225
2N2326 300
Forward Current RMS IT(RMS) 1.6 Amp
Peak Surge Current ITSM 15 Amp
(One-Half Cycle, 60 Hz)
No Repetition Until Thermal
Equilibrium is Restored
Peak Gate Power - Forward PGM 0.1 Watt
Peak Gate Voltage - Forward VGFM 6.0 Volts
Reverse VGRM 6.0

stg
-65 to +150 °c
Lead Solder Temperature
(> 1/16" from case, 10 sec. max)
- +230 °c
* JEDEC Registered Values
2-277
ELECTRICAL CHARACTERISTICS (T. = 25'C unl.., otI1erwi.. noted. R.. = 1000 ohm,)

Peak Forward Blocking Voltage (Note 1) VDRM Volts
2N2322 25" -
2N2323
2N2:r.!4
50"
100"
--
2N2325
2N2326
150"
200"
--
Peak Reverse Blocking Current IRRM I1A
(Rated VORM, T J = U5'C) - 100"
Peak Forward Blocking Current IDRM I1A

(Rated VORM, T J = 125'C) - 100"
Forward "On" Voltage VT Volts

(IT=1.0A Peak) - 1.5
(IT = 3.14 A Peak, T C = 85' C) - 2.0"
Gate Trigger Current (Note 2) IGT I1A

(Anode Voltage = 6.0 Vdc, RL = 100 ohms) - 200
(Anode Voltage = 6.0 Vdc, RL = 100 ohms, TC = -65'C) - 350"
Gate Trigger Voltage VGT Volts

(Anode Voltage = 6.0 V, RL = 100 ohms) - 0.8
(Anode Voltage = 6.0 V, RL = 100 ohms, TC = -65'C) - 1. 0"
(VDRM = Rated, RL = 100 ohms, TJ = 125°C) 0.1" -
Holding Current IH rnA
(An04e Voltage = 6.0 V) - 2.0
(Anode Voltage = 6. O~, TC = -65'C) - 3.0"
(Anode Voltage = 6.0 V, TC = 125'C) 0.15" -
Turn-On Time tgt Circuit dependent,
consult manufacturer
Turn-Off Time tq
" JEDEC Registered Values
Notes: 1. VRSM and VORM can be applied for aU types on a continuous de ward or reverse blocking capability such that the voltage applied exceeds
basis without incurring damage. the rated blocking voltage.
2. R6K current is not included in measurement.
Thyristor devices shall not have a positive bias applied to the gate concur·
Thyristor devices shall not be tested with a constant current source for for· rently wtth a negative potential applied to the anode.
FIGURE 1- CASE TEMPERATURE vs CURRENT

~l~r---~~~~~~~~~~~~~-'r---~
1 120
~ 110t--~~~~"..t::---t--+---t''t---'1-----i
~120f.:lllli"'-+---
Ii:!
j!!100
~
3Ioo~-+~~~~~~~~a==F~ ~ ~~---+--~~~~~---+--~~~~~~~
!!
j 90 ~60~---+----~~~~--~~--+---~----~
~~40~--~----~~~~~~---P~--~--~
~ 80~--~--~--~--+-~~--+-~~--~ c
i ~
i 70t---t--+-..,.--f--r----/--+--+--"M ~20r----+----t-~~~'~~~~~--~d~C--;
~ ~ i ~'
~~0--~0~.2--~0~.4--~0~.6--~0~.8~-1~.0~~1.2~~1.~4--~1.·6 ~ °0~--~0~.l----~0.2~--~0~.3~~Ot.4~~~0.~5--~0~.6----10.7
IT(AV).AVERAGE FORWARO CURRENT (AMP) IT(AV),AVERAGE FORWARD CURRENT (AMP)
2-278
2N2330 (SILICON)
2N2331
NPN silicon annular Star transistors for low-level

DclAC chopper applications.
CASE 22 CASE 31
(TO-lS) (TO-S)
2N2331 2N2330
Collector connected to cue
MAXIMUM RATINGS
2N2330 1N2331
Rating Symbol (TO-S) (TO-18) Unit
Total Device Dissipation @ T A = 25°C PD 0.8 0.5 Watt

Derate above 25°C 5_33 3_33 mW/oC
Total Device Dissipation @ TC = 25°C PD 3.0 1.8 Watts

Derate above 25 0 C 20 12 mW/oC
2-279
ELECTRICAL CHARACTERISTICS (TA = 2S0C unless otherwise noted)

OFF CHARACTERISTICS

(IC = 1 mAdc, IB = 0) 20 -
(IC = 10 MAdc, IE = 0) 30 -
(IE = 10 MAdc, IC = 0) 5.0 -
Collector Cutoff Current nAdc
ICBO
(VCB = 4.5 Vdc, IE = 0) - 1.0
Emitter Cutoff Current nAdc
lEBO
(VBE = 4.5 Vdc) - 5.0
Offset Current 0 nAdc

I(Off)
(VBC = 2 Vdc, VCE = 0, T A = 25 C) - 1
(V BC = 2Vdc, VCE = 0, TA = 85 0 C) - 10
ON CHARACTERISTICS
(IC = 10 mAdc, VCE = 1 Vdc) 50 -
Offset Voltage mVdc
V(off)
(IB = 200 MAdc, IE = 0) - 0.75
Inverse SatUration Voltage mVdc
VEC(sat)
(IB = 200 MAdc, IE = 50 MAdc) - 3.0

Cob
(V CB = 2 Vdc, IE = 0) - 10
(V BE = 2Vdc, IC= 0) - 20
2-280
INVERSE SATURATION VOLTAGE INVERSE SATURATION VOLTAGE

versus versus
EMITTER CURRENT BASE CURRENT
1.8
'> '>
5 7
T,,:=25°C
.s
~
\
I,_lmi
1.6
\ ~ =2SoC I, = SO "Adc
z: 1.4
= 500 ~A
~r\.
I, <> T. = 8Soc'I
I, = 200~y V / i
~ 1.2
/ / I~
~
/ ....
V '"
ffi
I,
V
= 100 ~~/ / 1.0
~
>
!:
~V / ,./" 3" 0.8
;:;
,;
o 0.6
20 40 60 100 200 400 600 1000 20 40 60 100 200 400 600 1000
I.. EM IHER CURRENT ("AI I,. BASE ON·DRIVE CURRENT (,.A)
INVERSE SATURATION VOLTAGE OFFSET VOLTAGE

versus versus
BASE CURRENT BASE CURRENT
1.4 0.8
I,II, = 0.25
/
-- ~ 0.6
\ 1,=0
T. = 25°C ~ 17
I
T. = 85°C ~ ~
--
1--- '//
....
~
~ 0.4
t;;
tt<>
1'.. "'" ---
~ ....
r- T. = 2SoC
....
--~
-
J 0.2 "- T. = 8SoC
0.6
20 40 60 100 200 400 600 1000 20 40 60 100 200 400 600 1000
I,. BASE ON·DRIVE CURRENT ("AI I,. BASE OFF'()RIVE CURREN' !,.A)
INVERSE OUTPUT CAPACITANCE versus COLLECTOR·BASE VOLTAGE

SATURATION and
CHARACTERISTICS INPUT CAPACITANCE versus EMITTER·BASE VOLTAGE
30
- - --
20
r-- t--.
~UIT CjPjCITANiE
J-.-
........ C... OUTPUT CAPACITANCE
- 20r-~~~~1-----t---~-----r--~
T. '" 2SoC
...... r-....
--
1
O.S 1.0 I.S 2.0 2.S 3.0 0.1 0.2 0.4 0.6 1.0 4 6 10 20 30
VEC • EMIHER-tOlLECTOR VOLTAGE (mVdcl REVERSE BIAS (VOLTSI
2-281
CASE 161
(TO-41)
PNP Germanium power transistors designed for very high-cur-

rent switching applications requiring low saturation voltages, fast
switching times and good safe operating area.
MAXIMUM RATINGS

Collector Current - Continuous

VEB
IC
-- 2.5
50
---- Vdc
Adc
Base Current - Continuous IB .- 10

- Adc
Total Device Dissipation @T C =25° C PD

- 170
- Watts
W/oC
-
Derate above 25° C 2.0
Temperature Range
T J' Tstg -65 to +110
- °c
Thermal Resistance, Junction 8JC 0.5 °C/W
to Case
IB(off) --+- 0.25 mH
*
• R3 r/:><---"''VIr--<l......rVY'y"\
Rl '" 1.0 Ohm, 20 Watts R5 IC Adjun @VCE = Vz ,o---.._-'VVv+-l
R2'" 10 Ohms, 2.0 Watts
R3 = 0.1 Ohm, 1.0% 81: Adjust for '8(on) '"
R4 '$ 0.04 Ohm 82'" 2.0 Vdc, Adjust for 'B(off) '" 0.2 Adc
83= 12 Vdc 50W
*Not required if current probe is used to read IS1 "'VZ

**PRF "" 60 Hz
***Zener selected to establish Sustaining Voltage.
2-282
ELECTRICAL CHARACTERISTICS (Te = 25"C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV CEO Vde
(IC = 100 mAde, IB = 0) 2N2357 30 - -
2N2358 60 - -
2N2359 80 - -
Collector-Emitter Sustaining Voltage (See Figure 1) Vdc
V CE(sus)
(IC = 50 Adc) 2N2357 35 - -
2N2358 40 - -
2N2359 45 - -
Collector -Emitter Cutoff Current ICES mAde
(V CE = 60 Vdc, V BE = 0 2N2357 - - 50
(V CE = 100 Vde, V BE = 0) 2N2358 - - 50
(V CE = 120 Vde, V BE = 0) 2N2359 - - 50
Collector Cutoff Current ICBO liAde

(VCB = 2.0 Vdc, IE = 0) - - 200
Collector-Emitter Cutoff Current I CEX mAde

(V CE = 40 Vde, V BE (ol!) = 0.2 Vdc) 2N2357 - - 5.0
(V CE = 80 Vde, V BE (off) = O. 2 Vdc) 2N2358 - - 5.0
(V CE = 100 Vdc, VBE (off) = O. 2 Vdc) 2N2359 - - 5.0
(V CE = 40 Vdc, VBE(Off) = 0.2 Vde, TC = 100"C) 2N2357 - - 35

(+0, _3.0°C)
(V CE = 80 Vde, V BE (off) = O. 2 Vde, TC = 100"C) 2N2358 - - 35
(+0, -3.0' C)
(V CE = 100 Vdc, VBE (011) = O. 2 Vdc, TC = 100' C) 2N2359 - - 35
(+0, _3.0°C)
(V EB = 2. 5 Vdc, IC = 0) - - 50
ON CHARACTERISTICS
(IC = 20 Adc, VCE = 1. 5 Vdc) 30 - 90
(IC = 50 Adc, VCE = 1. 5 Vdc) 15 - -

V CE(sat)
(IC = 50 Adc, IB = 5.0 Adc) - - 0.5
Base-Emitter Saturation Voltage V BE(sal) Vdc

(IC = 50 Adc, IB = 5.0 Adc) - - 0.9
(IC = O. 5 Adc, V CE = 6.0 Vdc, I = 30 kHz)
Rise Time I
r
- 12 - liS
(V CC = -28 Vdc,
Storage Time IC = 50 Ade, I - 5.0 - lis
s
IBI = 5.0 Adc, IB2 = 3.0 Adc)
Fall Time (See Figure 3) If - 6.0 - liS
FIGURE 2 - SWITCHING TIMES FIGURE 3 - SWITCHING TIME

TEST CIRCUIT
-
20
VCC=28V +15~-1L
10
7.0
t--r-
ISl = ICI10
IS2 = lSI
/' -255:lJ
50iLS I- "I- . .
1-
lOOiLS
.3 Is INPUT PULSE
w 5.0
r- Ir, If';; 10 ns
;x;,
"
>= Vtr
PRF=60Hz
. . . .If1--'
3.0
2.0 - -- ,-
5.0
SCOPE
1.0 MR830
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I C, COL LECTO R CU RRENT (AMP}
2-283
2N2368 (SILICON)
NPNsUicon annular· transistor designed for high-

speed, low-level, saturated-switching application.
CASE 22
(TO-IS)
Collador connected to C8sa
MAXIMUM RATINGS
Total Device Dissipation@ TA := 25°C PD 0.36 Watt
Total Device Dissipation@ TC = 25°C PD 1.2 Watt
Operating and Storage Junction TJ. Tstg -65.10+ 200 °c

Temperature Range

89011 O.l"F I KI!
o '\.. . • "A" _u. V.,, TO OSCILLOSCOPE
v;, + O.l"F 500!l
n
INPUT IMPEDANCE~· 50!1
·-10-- . 8 RISE TIME ~I ns
'. 5001!
'-!> 9Hl
0.OD23,tf 0.0023"F +6V

PULSE GENERATOR 561! o
V;, RISE TIME < I .s
SOURCE IMPEDANCE ~ 50Q .
I
IO"F IO"F
I ~4V-+-'-"'-'-';;;';';"'';';''''
PW'~300 ns .
llV~ + 10V
DUTY CYCLE < 2% ~-
po
2-284
2N2368 (continued)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage II} BVCEO Vdc
(Ie = 10 mAdc, IB = 0) 15 -
(Ic = 10 I1Ade, VBE = 0) 40 -
Collector- Base Breakdown Voltage BVCBO Vdc
(Ic = 10 /.lAde, IE = 0) 40 -
(IE = 10 11 Adc, IC = 0) 4.5 -
Collector Cutoff Current ICBO /.IAdc
(VCB = 20 Vdc, IE = 0) - 0.4
(VCB = 20 Vdc, IE = 0, T A = 150 oC) - 30
ON CHARACTERISTICS
DC Current Gain (1)

(Ie = 10 mAde, VCE = 1.0 Vdc)
hFE
20 60
-
(IC = 10 mAde, VCE = 1.0 Vdc, TA = -55°C) 10 -
(IC = 100 mAdc, VCE = 2.0 Vdc) 10 -
Collector-Emitter saturation Voltage VCE(sat) Vdc
(Ic = 10 mAdc, IB = 1.0 mAdc) - 0.25
(Ie = 10 mAdc, IB = 1.0 mAdc) 0.7 0.85
Current-Gain- Bar.dwidth Product fT MHz
(VCB = 5.0 Vdc, IE = 0, f = 140 kHz) - 4.0
Storage Time (Figure 1) ts ns
(Ic = IBI = 10 mAdc, IB2 = -10 mAdc) - 10
(IC = 10 mAde, IBI .. 3.0 mAdc, IB2 = -1.5 mAdc) - 12
Turn-Off Time (Figure 2) tofi ns
(IC = 10 mAdc, IBI = 3.0 mAdc, IB2 = -1.5 mAdc) - 15
III Pulse Test: Pulse Width = 300 /.Is; Duty Cycle ~ 2%
TURN·ON WAVEFORMS FIGURE 2 - TURN·ON AND TURN·OFF TIME

TEST CIRCUIT
_II
V,,, TO OSCILLOSCOPE
" INPUT IMPEDANCE o. 501l
13KIl
R 501l
RISE TIME = 1 ns
13K~ TURN·OFF WAVEFORMS
D.0023 1,F 0.D023 1'F
~T'I<----l0%
PULSE GENERATOR 501l I I
V" RISE TIME < 1 ns
SOURCE IMPEDANCE ~ 501l
-'t.
"
O.OO5I'F 0.005 1,F .'L
. 90%
PW··-' 300 ns
DUTY CYCLE < 2% v" :9 O.lI'F O.lI'F ~Vcc~3V
.
2N2369 (SILICON)
2N3227
NPN silicon annular transistors for low-current,

high-speed switching applications.
CASE 22
(TO-18)
MAXIMUM RATINGS

. Collector-Base Voltage VCE 40 Vdc
C ollector- Emitter Voltage VCES 40 Vdc
Collector-Emitter Voltage 2N2369 VCEO 15 Vdc

2N3227 20
Emitter-Base Voltage 2N2369 VEB 4.5 Vdc

2N322'7 6.0
Collector Current (10 J1.sec pulse) Ic(Peak) 500 mA
Total Device DisSipation PD

@ 25°C Ambient Temperature 0.36 Watt
Derating Factor Above 25°C 2.06 mW/oC

@ 25°C Case Temperature 1.2 watts
Junction Temperature, Operating TJ +200 °c
storage Temperature Range Tstg -65 to +200 °c
SWITCHING TIME EQUIVALENT TEST CIRCUITS

FIGURE 1 - t... CIRCUIT - 10 mA FIGURE 3 - to" CIRCUIT - 10 mA
3V~iIIIV'-.., + 10.75 V--l I, t-- 3V
2700
-9'1~~---'"
v---:j-t:-:ns
3.3 K
PULSE WIDTH (I,) = 300 ns PULSE WIDTH (1,)= 300 ns
n
• DUTY CYCLE = 2% DUTY CYCLE = 2%
FIGURE 2 - t... CIRCUIT":' 100 mA FIGURE 4 - to" CIRCUIT - 100 mA
+IO.8V +U.4;U_ .
-2V ~ l<
PULSE WIDTH (I,)
Ins
= 300 ns
_1_
,T'
_Jc.,< 12pl
-8.6;~ns
PULSE WIDTH (I,) BETWEEN 10 AND 500~s
-" .....,..., .
_ ":Cs < 12 pI
DUTY CYCLE = 2% OUTY CYCLE = 2%
·Total shunt capacitance of test jig and connecton.
2-286
Characteristic Fig. No. Symbol Min Max Unit

Collector Cutoff Current I CBO !lAdc
(V CB = 20 Vdc) 2N2369 - 0.4
2N3227 - 0.2
(VCB = 20 Vdc, T A = 150°C) 2N2369 - 30
2N3227 - 50
Collector Cutoff Current IcEX !lAdc
(VCE = 20 Vdc, VEB(off) = 3 Vdc)
Base Cutoff Current
2N3227 - 0.2
IBL !lAdc
(VCE = 20 Vdc, VEB(of!) = 3 Vdc) 2N3227 - 0.5
(IC = 10!l Adc, IB = 0) 40 -
(IE = lOll Adc, Ie = 0) 2N2369 4.5 -
2N3227 6.0 -
Collector-Emitter Breakq:own Voltage (1) BVCEO Vdc
(IC = 10 mAdc) 2N2369 15 -
2N3227 20 -
Collector-Emitter Voltage BVCES Vdc
(I C = 10 IL Adc, IB = 0) 40 -
Collector-Emitter Saturation Voltage III VCE(sat) Vdc
(IC = 10 mAde, IB = 1 mAdc) Both Types 11,13 - 0.25
(IC = 100 mAdc, IB = 10 mAdc) 2N3227 - 0.45
Base-Emitter Saturation Voltage (1) VBE(sat) Vdc
(IC = 10 mAdc, I¥ = 1 mAde) Both Types 13 0.70 0.85
(IC = 100 mAdc, B = 10 mAde) 2N3227 0.8 1.4
DC Current Gain III hFE -
(Ic = 10 mAdc, VCE = 1.0 Vdc) 2N2369 40 120
2N3227 12 100 300
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = _55 0 C) 2N2369 20 -
2N3227 12 40 -
(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3227 12 30 -
(Ic = 100 mAdc, VCE = 2 Vdc) 2N2369 20 -
Small Signal Current Gain hre -
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 5.0 -
(V CB = 5 Vdc, IE = 0, f = 140 kHz) - 4.0
Input Capacitance C1b pF
(VBE = 1 Vdc, Ie = 0, f = 140 kHz) 2N3227 4 .. 0
Storage Time 10 ts ns
(Ic = IB1 = IB2 = 10 rnA) - 13
Turn-On Time 1,6 ton ns
(IC = 10 rnA, J B1 = 3 rnA, VCC = 3 V, V EBLOffl = 1. 5 Vdc) - 12
Turn-Off Time 3,6 toff ns
(Ie = 10 rnA, 1B1 = 3 rnA, IB2 = 1.5 rnA, Vce = 3 V) - 18
Total Control Charge 7,8 QT pC

(IC = 10 rnA, IB = 1 rnA, VCC = 3 V) 2N3227 - 50
Delay Time 2,6 tq: - 5.0 ns

VCC=10V, VEB(off) =2 Vdc, 2N3227
Rise Time Ie = 100 rnA, IBI = 10 rnA tr - 18 ns
Storage Time
VCC= 10 V 2N3227
4,6 ts - 13 ns
Fall Time IC = 100 rnA, lSI = IB2 = 10 rnA
tr - 15 ns
(11 Pulse Test: Pulse Width = 300 !lS, Duty Cycle = 2%
2-287
FIGURE 5 - JUNCTION CAPACITANCE VARIATIONS FIGURE 6 - TYPICAL SWITCHING TIMES
100
""'-
- ......
-LIMIT I
- -TYPICAL
'\.
'\.
\. ~. = 10
Vee = 10 V
-
TJ = 25°C-
50 '\. VOl =2V
4
........
r-.... ......... \
\ \
\ "
.;: - h
.-~
COb.
1--
--
i"-.. . .
1-,..1
Cob
II
),
t,(Vee =3V)
\
f\
~
.'" "~r!:-
~ Vee = 10V
......
~
......
t:,...-
"- t-...
'\.
f\.
""
./ t,
,...V ~
1 2
0.1 0,2 0,5 1.0 2.0 5.0 10 1 10 20 50 100
REVERSE BIAS (VOLIS) Ie, COllECTOR CURRENT (mAl
FIGURE 8 - QT TEST CIRCUIT

FIGURE 7 - MAXIMUM CHARGE DATA
+ 5 V -...j t, f.- 3 V0-"'27""0'----' VALUES REFER TO
=10 rnA TEST POINT
0~10PFm.x
Ie
500
1 1
I II
Vee = lOY
- - -100°C
----25°C I II I <lns 1F
PULSE WIDTH (tl).= 5/Ls
VI DUTY CYCLE = 2%
OTt tJ~ :::: 10
200 I II Ir- 1"7'
C,.fJ. 40= /
\. FIGURE 9 - TURN·OFF WAVE FORM
100
/' >\ ~ [/ / V
I
...~
~
'"<.> 50 -
.~ ,...
.,/
/'
L
I
V
C.... COPT
~.
TlME--....
Q..... Vee 10 V
V
,/'
/C., Vee =3 V FIGURE 10 - STORAGE TIME EQUIVALENT TEST CIRCUIT
20
+: -!Jt~
-~ f-
10V ..."""'_......
980
10 -4V
1 10 20 50 100 < 1 ns 500
Ie, COLLECTOR CURRENT (rnA) PULSE WIDTH (tl) = 300 ns
DUTY CYCLE = 2%
• Total shunt capacitance of test jig and connectors.
2-288
FIGURE 11 - MAXIMUM COLLECTOR SATURATION VOLTAGE CHARACTERISTICS

1.0
\
i\ \ T, = 2SOC
Ie = 3mA le= 10mA 1\ le=30mA I\,e = so mA Ie = 100 mA
\ \ \
\ ~ \ 1\['..
.... 1'- _ _
1\ \. " "- ........ -... ,...
- -
0.2
...... '" - ~ i'.. r--.....
----
0.02 O.OS 0.1 0.2 O.S 1.0 10 20
I~ BASE CURRENT (mAl
FIGURE 12 - MINIMUM CURRENT GAIN CHARACTERISTICS

200
z
~
....
z:
lIi
100
....- ,.......
,...... ....
..-
"""
--- ::::-
~
,.....
T, = 12SoC
T,
T, = 2SoC
7SoC
--- ~
i""'oo..
~
I
trl
I I
7S0~
'"
::>
to
....- ,..... ~ I I I ~ T, 2;OC and
--
'-' -.....:::::: .......
--- ---V r--- ......... , ~

CI
:=!
::> ~ T'1 11S;C
z:=! SO
'""" """'" ~
:E
i V
V""" - ~ - T, _ -SSoC
r---I-- """'"i ' ........ ~ ....
r- r--....
~
I""'-
......
20 V
I 10 20 so
.......
t--..
100
Ie. COLLECTOR CURRENT (mAl
FIGURE 13 - SATURATION VOLTAGE LIMITS FIGURE 14 - TYPICAL TEMPERATURE COEFFICIENTS
~
0
1.4
1.2 r-- T~~=2~~C

1.0
O.S ~
-..;
1 I
Bvc for VeEl...,
I
(25°C TO 121SOCI
f T
-
...c:. ~
co
~
0
:>
1.0 MAXi"y
r:::::T.1
"" g
E-0.5
APPROXIMATE DEViATION
FROM NOMINAl
5SoC TO +25°C 25°C TO 125°C
(,SSOC,TO +TCI
z: 0.8
0 MIN VIEII.fl 0:;
...
t.e +0.15 mV/ot
....OA my/ot
+Q.15mV/OC
(~5S0CITO + J50Cl
tt -1.0 +0.3 mV/OC
~
::> 0.6
~
I I
'-'
~ -1.5 (2S 0C TO 12soCl
'" ~
>
1 0.4 -2.0
~ tJv. torV.,...1
MAX VeE"lfl .... 1--'
0.2
I 10 20 so 100
-2.5
o w ~ ~
I I ~ ~ ~ ro ~ ~ ~
Ie. COLLECTOR CURRENT (mAl Ie COLLECTOR CURRENT (mAl
2-289
2N2369A (SILICON)
2N2369A JAN, JTX AVAILABLE
NPN silicon epitaxial transistor for high-speed

range of 10 - 100 mAdc switching applications. Speci-
fications provided at _55 0 C to +125 0 C for critical dc
CASE 22 characteristics.
(TO·18)
MAXIMUM RATINGS
Collector-Emitter Voltage V CEO 15 Vdc
Emitter-Base Voltage VEB 4. 5 Vdc

Peak (10 fls Pulse) 500
Total Device Dissipation@ T A = 25° C PD 0.36 Watt
De rate above 25° C 2.06 mW/oC
Total Device DisSipation @ T C = 25° C PD 1.2 Watts
Derate above 25° C 6.85 mW;oC
Operating Junction Temperature Range TJ +200 °c

stg
FIGURE 1 - ton CIRCUIT -10 rnA FIGURE 2 - toll CIRCUIT -10 rnA
+ 10. 6V n t
3.0V
: +10'75:~-_~
3~OV __ I
-1. 50~~-~ <;; ns o-'\N\r-+-i

3.3 k
-!-
_"i'
J C s t < 4. 0 pF
-4. 15 V
1. 0 ns
1-
t--
o-'\N\r-t-t
3.3 k
I
o
;r-::
_ -II C s t < 4.0 pF
PULSE WIDTH (t 1) = 300 ns PULSE WIDTH (t/ = 300 ns
DUTY CYCLE = 2.000 DUTY CYCLE = 2.000
t Total shunt capacitance of test jig and connectors.
2-290
2N2369A (continued)
ELECTRICAL CHARACTERISTICS (T ... = 2S·C un!es5 otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*

([C = [0 mAde, [B = 0)
- BV CEO . [5 -
Vde
Collector-Emitter Breakdown Voltage - BV CES Vde

([C = 10 11Ade, [B = 0) 40 -
Collector-Base Brea.kdown Voltage - BV CBO Vde
([C = 10 11Ade, [E = 0) 40 -
Emitter-Base Breakdown Voltage - BV EBO Vde

([E = 10 11Ade, IC = 0) 4.5 -
Collector Cutoff Current - ICES ~Ade
(V CE = 20 Vde, V BE = 0) - 0,4
Collector Cutoff Current - [CBO ~Ade

(V CB = 20 Vde, [E = 0, T A = 150°C) - 30
Base Current - IB /.LAdc

(V CE = 20 Vde, V BE = 0) - 0.4
ON CHARACTERISTICS
DC Current Gain*
(IC = 10 mAde, VCE = 1. 0 Vde)
- hFE
. - 120
-
(IC = 10 mAde, V CE = 0,35 Vde) 40 -
(IC = 10 mAde, VCE = 0.35 Vde, TA = _55°C) 20 -
([C = 30 mAde, V CE = 0.4 Vde) 30 -
([C = 100 mAde, VCE = 1. 0 Vde)
Collector-Emitter Saturation Voltage*
(IC = 10 mAde, IB = 1. 0 mAde)
- VCE(sat)
. 20
-
-
0.20
Vde
(IC = 10 mAde, IB = 1. 0 mAde, T A = +125'o C) - 0.30

(IC = 30 mAde, [B = 3.0 mAde) - 0.25
(IC = 100 mAde, IB
Base-Emitter Saturation Voltage*

(IC = 10 mAde, IB = 1. 0 mAde)
= 10 mAde)
- VBE(sat)
. -
0,70
0,50
0.85
Vde
(IC = 10 mAde, [B = 1. 0 mAde, T A = +125°C) 0,59 -

(IC = = 1. 0 mAde, T A = -55°C)
10 mAde, IB - 1. 02
(IC = 30 mAde, [B = 3.0 mAde) - 1. 15
(IC = 100 mAde, IB = 10 mAde) - 1. 60
Current-G<lin-Bandwidth Product IT MHz
(IC = 10 mAde, VCE = 10 Vde, [ = 100 MHz) 500
Cob
(V CB = 5,0 Vde, IE = 0, I = 140 kHz) 4.0
Turn-On Time t ns
on
(V CC = 3,0 V, V BE(off) = 1. 5 V, IC = 10 mAde,
IBI = 3.0 mAde, IB2 = 1. 5 mAde) 12
Turn-Off Time ns
toff
(V CC = 3.0 V, [C = 10 mAde, IBI = 3,0 mAde,
IB2 = I. 5 mAde) 18
Stora~e Tin1C' t ns
(IC = 10 mAde, 1m = IB2 = 10 mAde) s
13
* PulsC'T('st: PW =: 300 liS, Duty Cydt' :; 2.0%
FIGURE 3 - STORAGE TIME EQUIVALENT TEST CIRCUIT
PULSE WIDTH (t 1 ) = 300 ns

t1
+6,OV?i 10 V
980
DUTY CYCLE = 2,0% _4.0 0; - - --

< 1. 0 ns
F 500
t Total shunt capacitance of test jig and connectors,
2-291
2N2381 (GERMANIUM)
2N2382
speed, high-current switching applications.
CASE 31
(TO-5)
Collactor connectad to casa
MAXIMUM RATINGS
Collector Current-Continuous IC 500 mAdc
Total Device Dissipation @ T A ; 25°C PD 300 mW

Total Device Dissipation @ T C ; 25°C PD 750 mW

Operating and Storage Junction TJ , T stg -65 to + 100 °c

Temperature Range
FIGURE 1 - ACTIVE REGION TIME CONSTANT FIGURE 2 - TOTAL CONTROL CHARGE
4 ., 3000
,.
TJ J 25°C g'"
TJ = 25°C
/
~I=IO /'
::>
~
o
~ 1000
I,
./
~ '"~
:i
700
.........
"-""" - ....- ~ ".,.. ~
e1~
<.)
~
g
500
300
/' "'"
....
J ~
100
30 50 70 100 300 500 1.0 3.0 5.0 7.0 10.0 30.0 50.0
Ie. COLLECTOR CURRENT (mAde) I,. BASE CURRENT (mAde)
2-292
Characteristic
OFF CHARACTERISTICS

(IC = 10 mAdc, IE = 0) 2N2381 15 - -
2N2382 20 - -
(Ic = 100 MAdc, IE = 0) 2N2381 30 - -
2N2382 45 - -
Latch-Up Voltage 7 LV CEX Vdc
2N2381 20 - -
2N2382 25 - -
Collector Cutoff Current MAdc
ICES
(V CE = 30 Vdc, V BE = 0) 2N2381 - - 100
(V CE = 45 Vdc, VBE = 0) 2N2382 - - 100
Collector Cutoff Current ICBO MAdc
(V CB = 5 Vdc, ~ = 0) - 1.0 7.0
(V CB = 5 Vdc, ~ = 0, TA = 85 0 C) - - 100
(V CB = 20 Vdc, IE = 0) 2N2381
2N2382 -
- -- 25
15

(V BE = 0.5 Vdc,IC = 0) - - 0.005
(V BE = 4 Vdc, IC = 0) - - 1.0
ON CHARACTERISTICS

(IC = 200 mAdc, VCE = 0.5 Vdc) 40 - -
(IC = 400 mAdc, VCE = 1. 0 Vdc) 25 - -
Collector-Emitter Saturation Voltage 8,10 Vdc
VCE(sat)
(IC = 200 mAdc, IB = 20 mAdc) - 0.25 0.4
(IC = 400 mAdc, IB = 40 mAdc) - 0.4 0.7
Base-Emitter Saturation Voltage 9,10 Vdc
VBE(sat)
(IC = 200 mAdc, IB = 20 mAde) 0.45 0.54 0.7
(IC = 400 mAde, IB = 40 mAdc) - 0.71 0.9

(IC = 20 mAdc, VCE = 10 Vde, f = 100 MHz) 300 - -
(V CB = 10 Vdc, IE = 0, f = 4 MHz) - 3.5 6.0
Input Capacitance 13 Cib pF
(V BE = 1 Vdc, IC = 0, f = 4 MHz) - 8.0 15
Delay Time 4 td - 4.5 7.0 ns
Rise, Time 4 tr - 8.0 15 ns
Storage Time 3,4 ts - 20 30 ns
Fall Time 4 tf - 8.0 15 ns
Active Region Time Constant 1,4 'fA - 1.6 3.0 ns
2-293
FIGURE 3 -- STORAGE TIME VARIATIONS
2.5 5
...
:,; 111=111 ...
:,;
...;::
-
4
'"..
le/llo«I ..
...;:: ~
~~
~
~
2.0
~ r--.. '"
~
3
V
,
gj
::;
!o 1.5
I' ~ !1l
.
~
:,;
~
...... --
~
z: 0
z:
.;
~
1.0 o
5 10 20 50 I 2 10
I", BASE CURRENT (mAde) 1,,11.. CIRCUIT DRIVE RATIO
FIGURE 4 -- SWITCHING TIME EQUATIONS & TEST CIRCUIT

50 Il
TO SAMPLING SCOPE
Rise Time = t· =. TAffJR = 10 to 90% Rise Time (fig. 5) Scope t,"; 0.7 ns
Fall Time = t, = TAf1CF = 10 to 90% Fall Time (fig. 6) Scope R' N ; " 100 KO
/30 = hFf at Edle of Saturation Scope ~ 3 pf
Ik = Ie in Saturation / In (Base "OFF" Current)
CIN
fJf == Ie in Saturation / hi (Base "ON" Current)

Ie = 200mA
GENERATOR Z_. = SOil lit = 40mA
INPUT PULSE t, < I ns I.. = 40mA
FIGURE 5 -- RISE TIME FACTOR FIGURE 6 -- FALL TIME FACTOR

1.5 1.0
,...~
;t \ ~ I,..ot
.: 1.4 \
~
~
:::. 0.8 ""
It'
gj \ Q
~
7
::;
f\ ::; ~
io 1.3 i 0.6
I
'\.
.
~
~ 1.2 -" .g_O.4

o
~
/
~
~
...:,;
;: 1. I
III
"' ........ .....
..... .......
...:,;
;:: 0.2
~
~
./
ii:
"" 1.01.5 5 10
- 20
..: 0 ~~
.02 .05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
lIo/fl' flollle
FIGURE 7 -- COLLECTOR LATCH·UP VOLTAGE AND TEST CIRCUIT
2N2381-Vee = -20V, R, = 401l PULSE GfNERATOR

2N2382-Vee = -25V, R, = SOil HP212A
ADWST VII for +0.5 Vat point A Vee
"U
ADJUST base pulse for 5"s width
ADJUST collector pulse to reduce duty cycle ~5% lJ."e:
I~ 300~----+-~~~-----+----~~----r--~
POWER SUPPLY V II
R,
HP 72IA
~ LATCH-UP TEST
TECHTRONIX 541
:::> LOAD LINE
OR EQUIVALENT
~200~----+-----~~~~~--~~----r---~ PULSE GENERATOR
~
HP212A . ._A....::..._....JW.....--1I--I
8100~----+-----~-----f~--~~----r---~
.2
-sLr
O~ __~__~~__~__~~__~__~
o 10 15 20 30
Va, COLLECTOR-I;MITTER VOLTAGE (VOLTS)
2-294
FIGURE 8 - COLLECTOR·EMITTER SATURATION VOLTAGES FIGURE 9 - BASE·EMITTER VOLTAGE

versus BASE CURRENT versus COLLECTOR CURRENT
~ 1.0 _ 0.8
c
...
~
~ - I I I
TJ = 2SoC ~=10
i
z:
c
0.8 ~ 0.7
i
_I.
TJ = 25°C iJ
5 0.6
:::>
\
I'....... ....... i§ 0.6
5 1/
~
~
,- \ )
III Ie = SOOmA
0.4 ~ 0.5
!:
:E
..
....
'"
c
\ ~
le-Joo~~+ ~
/
f;3 0.2 l:! 0.4
'-
Ie = 100mA
g SOmAl i I III ~io'"
<> Ie 10mA
ril, 1
i 0 I I II .] 0.3
J 0.1 0.3 0.5 0.7 1.0 3.0 S.O 7.0 10 30 50 10 30 50 70 100 300 SOD
I•• SASE CURRENT (mAdc) Ie. COLLECTOR CURRENT (mAdcI
FIGURE 10 - TEMPERATURE COEFFICIENTS FIGURE 11 - NORMALIZED GAIN CHARACTERISTICS
+2.0 2.0
LI volT
~
-
+,=10 Veo TJ= +8S!C
z:
~ +1.0 ~ I-" 1"""'-0 ....
--
Va,,,,, :,.....- ~
i ~ r' - ..! H~C TO ~25OC) ~
1.0
TJ +2SOC
roo..
§i ~ 0.7
,.
--
!--'
--- ---- - 1 V
u <>
(~250C T~ +~
g 0.5 TJ = -5SOC
I
l:! -1.0
...
f--:S ~ !!! ~
~ """Va,...,
~
0.3
~-5S0C TO +2JOC) ./"
~ -2.0 J
-3.0 0.1
50 100 200 300 400 SOO 10 30 50 70 100 300 SOO
FIGURE 12 - LEAKAGE CHARACTERISTICS FIGURE 13 - JUNCTION CAPACITANCE
COMMON EMITTER versus REVERSE VOLTAGE
30 15
V TJ +8SoC
/
Vco -,-20V
~I.
TJ +S5OC
I--V, "-
-...........;
rntRESHOLD I - - BI.I LIIIII.I Current. I" Is defined IS
baSI leakage current with both junctions
~
t-VOLTAGEt r--- reverse biased. Ie is always IISS th.n I"
for VIIJofil > Y,. (Vliloflt is off condition
~ r--. C••
) baSI bias. V, Is base Yoltage at threshold

of c,nduction.) i\ r..........
~
J-' TJ j2S0 C
1.0 I 2
-0.25 0 O.S 1.0 1.5 2.0 0.4 0.5 0.7 1.0 3.0 5.0 7.0 10 20
V..,.HI. BAS£.£MITTER REVERSE BIAS (VOLTS) REVERSE BIAS (VOLTS)
2-295
2N2405
2N2410 (SILICON)
NPN.silicon annular transistor designed for high-

CASE 31
(TO·5)
MAXIMUM RATINGS
Collector-Emitter Voltaga VCER 40 Vdc

RBE = 10 ohms
Collector-Base Voltage VeB 60 Vdc
Emitter-Base voitage VEB 5.0 Vdc

Total Device Dissipation @ Te = 25°C PD 2.5 Watts

Derate above 25°C 14.3 mW/oe
Operating Junction Temperature Range TJ 200 °c

2-296
2N2410 (continued)
ELECTRICAL CHARACTERISTICS (T. = 25'e ,,'''' ,th,,..'" ,p,,,',,d)

Characteristic I Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1) BV CEO Vdc
(sus)
(IC = 30 mAde. IB = 0) 30 -
Collector-Emitter Breakdown Voltage III BVCER Vdc
(Ic = 30 mAde. RBE = 10 ohms) 40 -
Collector-Base Breakdown Voltage BV eBO Vdc
(Ie = 0.1 mAde, IE = 0) 60 -
Emitter-Base Breakdo\VIl Voltage BV EBO Vde
(IE = 0.1 mAde, Ie = 0) 5.0 -
Collector-Cutoff CUrrent leES /lAde
(V CE = 30 Vde, VBE = 0) - 0.3
(VCE = 30 Vde, VBE = 0, TA = 150°C) - 350
Collector Cutoff CUrrent leBO /lAde

(VCB = 30 Vde, IE = 0) - 0.3
r--~ --
Emitter Cutoff Current lEBO /lVde
(V BE = 4 Vde, Ie = 0) - 0.3
ON CHARACTERISTICS
DC Current Gain 11)
(Ic = 10 mAde, VCE = 10 Vde) 30 120
(Ie = 150 mAde, VCE = I Vde) 15
(Ie = 150 mAde, VCE = 10 Vde) 30 120
(Ie = 500 mAde, VCE = 10 Vde) 25 100
Collector-Emitter Saturation Voltage (1) VCE(sat) Vde

(Ie = 150 mAde, IB = 15 mAde) 0.45
(IC = 500 mAde, IB = 50 mAde) 1.3
Base-Emitter Saturation Voltage (11 V BE (sat) Vde

(IC = 150 mAde, IB = 15 mAde) 1.2
(Ie = 500 mAde, IB = 50 mAde) 1.6
Current-Gain- Bandwidth Product fT MHz
(IC = 50 mAde, VeE = 10 Vde, f = 100 MHz) 200 -
(V CB = 10 Vde, IE = 0, f = 1 MHz) - 11

(V BE = 0.5 Vde, Ie = 0, f = 1 MHz)
--
- 50
T'lrn-On Time (td + trl ton ns

(Ie = 150 mAde, Figure 1) - 65
(IC = 500 mAde, Figure 2) - 65
Turn-Off Time (t s + tf) toff ns

Storage Time ts n"

Fall Time tr ns
I (Ie = 150 mAde, Figure 1) - 30
III Pulse Test: PuIs. Widtb = 300 /ls: Duty eycle = 2%

FIGURE 1-1, 150 mA= FIGURE 2-I, 500mA =
t, "" 1ns, PULSE WIDTH'" 300 ns ~ '" 12 n~ t, '" 12 ns, PULSE WIDTH = 1.51's ± 0.51's, PRR '" 500 Hz
S ------T
INPUT
+4.75 V
INPUT
,----=0-.... ------ +6.50V
.~ RfO%-~
- - -3.50V
-2.75 V 10%--
OUTPUT
--
90%-- -
tOil - t.
-
--
I..
--- ----90%
-~
OUTPUT
t••
+6.5V
2500 t. ~ 4ns 1000 t.. ~4ns
INPUT Ri• " , 100kO INPUT Ri. ' " lOOk!)

Ci• ' " 12 pF C,.'" 12pf
2-297
2N2415 (GERMANIUM)
2N2416
AMPLIFIER
GERMANIUM ULTRA-HIGH-FREQUENCY TRANSISTORS
TRANSISTORS
... for very low-noise, high-gain amplifiers, oscillators, mix-
GERMANIUM PNP
ers, and frequency multipliers.
EPITAXIAL MESA
DIFFUSED BASE
• High Maximum Frequency of Oscillation
f~ = 2000 MHz typ
• Low Noise Figure

NF=3.0 dB max at 200 MHz (2N2415)
• High Maximum Available Gain
MAG = 14 dB typ at 500 MHz for 2N2415.
MAG = 12.5 dB typ at 500 MHz for 2N2416
• High Breakdown Voltages
BVcoo =25 Volts typ
BVcEo = 15 Volts typ
• Low Output Capacitance
C.b =0.9 pFtyp
MAXIMUM RATINGS'
Collector- Base Voltage V CB 15 Vdc
Total Device Dissipation @ T A = 25'C PD 75 mW

Operating and Storage Junction T J , Tstg -65 to +100 ·C
Temperature Range
* The maximum rating is that value above which device operation may be impaired TO-12 PACKAGE
from the viewpoint of life or performance.
CASE 20
2-298
ELECTRICAL CHARACTERISTICS (T, = 25"C unless olh.,w;se noled)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage' (1) BVCEO Vde
(IC = 2.0 mAde, IB = 0) 10 15 -
Collector-Base BreakdO)Yn Voltage BVCBO Vde
(IC = 100 "Ade, IE = 0) 15 25 -
(VCB = 10 Vde, IE = 0) - 1.0 5.0
"Ade
(V BE = 0.3 Vde, IC = 0)
~BO - - 100
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAde, VCE = 6.0 Vde) 2N2415
2N2416
(IC = 2.0 mAde, VCE = 6.0 Vde, 1= 200 MHz) 2N2415 500 - -
2N2416 400 - -
(VCB =6.0Vde, IE=O, 1=1.0MHz) - 0.9 2.0

(IC = 2.0 mAde, VCE = 6.0 Vdc, 1= 1. 0 kHz) 2N2415 15 - 300
2N2416 10 - 300
Collector-Base Time Constant** r b 'e e ** ps
(IE = 2.0 mAde, VCB = 6.0 Vde, 1= 79.8 MHz) 2N2415 - - 8.0
2N2416 - - 10
Noise Figure NF dB
(VCB = 6.0 Vde, ~ = 1.5 mAde, RS = 75 ohms, I = :~~4~~z)
- 2.4 3.0
2N2416 - 3.4 4.0
FUNCTIONAL TESTS
Maximum Available Gain#
(VCB = 6.0 Vde, IE =2.0 mAde, 1= 500 MHz) 2N2415
2N2416
(1) Pulse Test: Pulse Width ~ 300 ps, Duty Cycle:: 2.0%.
** Direct Collector-Emitter header capacitance balanced out to give true device capability.
MAG calculated from f max as determineri from actual amplifier circuits.
TYPICAL MAG and NOISE FIGURE versus FREQUENCY

60
14
Vel 6.0V
I, 2.0mA
-- -
50
12
OJ
~
z 40 r-.... 10
;;: lil
'"~., :s
....
:3 30 '"
8.0 co
:::>
..:
--
~
c< ....
_MAG '"z
,.
d
c<
.....
6.0 0
..:
20 z
1/ 4.0
NF
.....
10
2.0
.......:
.......:
.......: o
10 50 100 500 1000 2000
f, FREQUENCY (MHzi
2-299
2N2453 (SILICON)
2N2453A
Dual NPN silicon transistors designed for differential

Case 654-04
Pin Connections, Bottom View
TO-78
All Leads Electrically Isolated from Case
PINS 4 AND 8 OMITTED
MAXIMUM RATINGS (each side)

Collecwr Current IC 50 mAdc
Operating and Storage Junction T J . T stg -65 to +200 C

Temperature Range
One Both
Side Sides
Power Dissipation@TA = 25'C PD 200 300 mW
Derate above 25· C 1.14 1.71 mW/"C
Power DissipatiOn@.T C = 25' C PD 600 1200 mW
T C =100'C 350 700 mW
Derate above 25·C 3.43 6.86 mW/"C
ELECTRICAL CHARACTERISTICS (each side) (T. = 25'C unle...,herN;se noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage" BVCEO(sus) • Vde
(IC = 10 rilAdc, IB = 0) 2N2453 30 -
2N2453A 50 -
(Ic = 10 /,lAdc, IE = 0) 2N2453 60 -
2N2453A 80 -
Emitter Base Breakdown Voltage BV EBO Vde
(IE = 0.1 /lAdc, IC· = 0) 7.0 -
(V CB = 50 Vde, IE = ·0) - 0.005
(V CB = 50 Vde, IE = 0, TA = 150'C) -. 10

~BO /lAde
(V BE = 5.0 Vde. IC = 0) - 0.002
• Pulse Test: Pulse Width ~ 300 /lS, Duty Cycle ~ 2. 0%.
2-300
ELECTRICAL CHARACTERISTICS (each side) (fA = 25'C unle.. olhe",i" noted)

ON CHARACTERISTICS
DC Current Gain -
hFE
(IC = 10 /lAde, V CE = 5.0 Vde) 80 -
(I C = 10 /lAde, V CE = 5.0 Vde, T A = -55·C) 40 -
(IC = 1. 0 mAde, VCE = 5.0 Vde) 150 600
(IC = 1. 0 mAde, VCE = 5.0 Vde, TA = -55·C) 75 -
VCE(sat)
(IC = 5.0 mAde, IB = 0.5 mAde) - 1.0

VBE(sat)
.(IC = 5.0 mAde, IB = 0.5 mAde) - 0.9
SMAll· SIGNAL CHARACTERISTICS
(IC = 5.0 mAde, VCE = 10 Vde, I = 30 MHz) 60 -
(V CB = 10 Vde, IE = 0, I = 140 kHz) - 8.0

(VBE = O. 5 Vdc, IC = 0, 1= 140 kHz) - 10
Input Impedance hie k ohms

(IC = 1.0 mAde, VCE = 5.0 Vde, 1= 1.0 kHz) 5.0 -
Voltage Feedback Ratio h X 10- 4
re
(IC = 1.0 mAde, VCE = 5.0 Vde, 1= 1.0 kHz) - 6.0

(IC = 1.0 mAde, VCE = 5.0 Vde, 1= 1.0 kHz) 150 600

oe
(IC = 1.0 mAde, VCE = 5.0 Vde, 1= 1.0 kHz) 5.0 30

(IC = 1. 0 mAde, VCB = 5.0 Vde, I = 1. 0 kHz) 20 30

(IC = 1.0 mAde, V CB = 5.0 Vde, 1= 1.0 kHz) - 5.0

(lC = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz) - 0.2
Noise Figure NF dB
(IC = 10 /lAde, V CE = 5.0 Vde, ~ = 10 k ohms, I = 1. 0 kHz) - 7.0
DC Current Gain Ratio**
(IC = 100 /lAde, VCE = 5.0 Vde) 2N2453A
hFE/hFE2**
0.90 1.0
-
(IC = 1. 0 mAde, V CE = 5.0 Vde) 0.90 1.0
(IC = 1. 0 mAde, VCE = 5.0 Vde, TA = _55°C to +125°C) 0.85 1.0
Base Voltage Diflerential IV BE1- VBE21 mVde

(IC = 10 /lAde, VCE = 5.0 Vde) - 3.0
(IC = 1. 0 mAde, VCE = 5.0 Vde) - 5.0
Base Voltage Differential Gradient /lV/oC

A(V BEl -V BE2)
(IC = 10 /lAde. VCE = 5.0 Vde, T A = _55° C to +125° C)
2N2453 I>TA - 10
2N2453A " 5.0
•• Lowest hFE reading is taken as hFE1 lor this ratio.
2-301
2N2476 (SILICON)
2N2477

speed, low-power saturated switching applications.
CASE 31
(TO-5)
Collector connected td case

MAXIMUM RATINGS
Total Device Dissipation @ TA = 25° C PD 0.6 Watt

Total Device Dissipation @ T C = 25° C PD 2.0 Watts
Derate above 25° C 11. 4 mW/oC
Operating & Storage Junction T j' Tstg -65 to +200 °c
Temperature Range
FIGURE 1 - TURN-ON TIME TEST CIRCUIT
400 V of<
o PW >150 ns
out -..I2ns
D.C. < 210
: (max)
I
Vin 10000 I
6.4Vl:£j-----l-
I V
Z=500
500 l 90/0-: out
I-t~
on
*Input and output waveforms monitored by means of an oscilloscope

or other indicating device having a rise time<O. 5 ns; input capaci-
tance of probe < 2. 5 pF with shunt resistance ~ 1 megohm.
2-302
ELECTRICAL CHARACTERISTICS (f. ~ 2S'C "nlos. oth.",;•• noted)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (11 BV CEO Vde
(IC = 50 mAde, IB = 0) 20 -
Collector-Base Breakdown Voltage BV cBO val:
(Ic = 10 uAde, IE = 0) 60 -
(~ ~ 100 uAdc, IC = 0) 5.0 -
Collector Cutoff Current ICBO "Adc
(V CB = 30 Vdc, IE = 0) - 0.2
(V CB = 30 Vdc, IE = 0, T A = 150°C) - 200
Emitter Cutoff Current lEBO uAde

(V BE = 5.0 Vde, IC = 0) - 100
ON CHARACTERISTICS
(IC = 150 mAde, V CE = O. 4 Vde) 2N2476 20 -
2N2477 40 -
VCE(sat)
(IC = 150 mAde. IB = 7.5 mAde) 2N2476 - 0.4
(IC = 150 mAde. IB = 3.75 mAde) 2N2477 - 0.4
(IC = 500 mAde, IB = .50 mAde) 2N2476 - 0.75
2N2477 - 0.65

VBE(sat)
(IC = 150 mAde. IB = 7.5 mAdc) 2N2476 - 1.0
(IC = 150 mAde. IB = 3.75 mAde) 2N2477 - 0.95
Current-Gain - Bandwidth Product IT MHz
(IC ~ 50 mAde, V CE = 10 Vde, I = 100 MHz) 250 -
(V CB = 10 Vde, ~ = 0, 1= 140 kHz) - 10

on
(V CC = 6.4 Vde, IC = 150 mAde, IBl = 15 mAde) - 25

(V CC = 6.4 Vde, IC = 150 mAde, IBI = IB2 = 15 mAde) - 45

s
111 Pulse Test: pulse width ~ 400 IlS. duty cycle ~ 3%.
FIGURE 2 - TURN·OFF TIME TEST CIRCUIT
VCC=6.4V PW >150 ns
D.C. < 2/.
17.7V
*
1000
n
'Input and output waveforms monitored by means of an oscilloscope

or other indicating device. having a rise time<O. 5 ns; input capaci-
tance of probe < 2. 5 pF with shunt resistance ~ 1 megohm.
2-303
2N2480,A
2N2481 (SILICON)
NPN silicon annular transistor for high- speed swi tch-

ing applications.
"
CASE 22
(TO-IS)
MAXIMUM RATINGS


@ 25°C Ambient Temperature
(Derate 2.06 mW/oC above 2SoC)
Total Device Dissipation PD 1.2 Watts
@ 25°C Case Temperature
(Derate 6.9 mW/oC above 25°C)
2-304
2N2481 (Continued)
ELECTRICAL CHARACTERISTICS (TA; 25°C unless otherwise noted)

(Ie = 10 /lAdc, IE = 0) 40 ---
(I£ = 100 /l Adc, Ie = 0) 5.0 ---
Collector-Emitter Breakdown Voltage- BVCEO Vdc
(IC = 30 mAdc, IB = 0) 15 ---
Collector- Emitter Breakdown Voltage BVCES Vdc
(1c = 1.0 /lAdc, VBE = 0) 30 ---
Collector Leakage Current 1cEX /lAdc
(VCE = 20 Vdc, VBE = 3 Vdc)
(VCE = 20 Vdc, VBE = 3Vdc,TA; lS0 0C)
---
---
0.050
15
Base Leakage Curren~ IBL nAdc

(VCE = 20 Vdc, VBE =3 Vdc) --- 50

(V EB = 4.0 Vdc, 1c = 0) --- 100

(IC = 1.0 mAdc, VCE = 1.0 Vdc)
hFE
25 --- ---
(IC = 10 mAdc, VCE = 1.0 Vdc)- 40 120
(IC = 10 mAdc, VCE = 1.0 Vdc, T A = -550C) III
(IC = 150 mAdc, VCE ; 1.0 Vdc) 111
20
20
---
---
Collector-Emitter Saturation Voltage VCE (sat) Vdc
(Ie = 10 mAdc, IB = 1.0 mAdc) --- 0.25
(IC = 100 mAdc, IB = 10 mAdc) III --- 0.40
Base-Emitter Saturation Voltage VBE (sat) Vdc

(IC = 10 mAdc, IB ; 1.0 mAdc) 0.7 0.82
(IC = 100 mAde, IB ; 10 mAde) 111 --- 1.25

(VCB = 5 V, Ie = 0, f = 1 MHz) --- 5.0
(V EB = 0.5 V, f = 1 MHz) --- 7.0

(V CE '" 10 V, Ie = 10 rnA, f = 100 MHzl
hfe
3.0 --- ---
Small-Signal, Short- Circuit, Input Impedance Re(hie ) ohms
(Real part)
(IC = 10 rnA, VCE = 10 V, f = 250 MHz) --- 60
Turn-On Time tan ns

(Ie = 100 rnA, IB1 = 10 rnA, VBE (off) '" 2 V) --- 40
(Ie = 10 rnA, IB1 = 1.0 rnA, VBE (off) = 2 V) --- 75
Turn-Off Time taft ns

(Ie = 100 rnA, IBI = 1Q rnA, IB2 = 5 rnA)
(Ie = 10 rnA, IB1 = 1.0 rnA, IB2 = 0.5 rnA)
---
---
55
45
Storage Time ts ns
(Ie = 10 rnA, IB1 = 10 rnA, IB2 = 10 rnA) --- 20
III Pulse width ==- 300 liS, Duty Cycle ==- 2%
2-305
2N2481 (Continued)
COLLECTOR SATURATION VOLTAGE CHARACTERISTICS

I. 0
TJ ~12S'C
8
le'= 10 mAe le~20mAde le~50mAde , Ie ~ 100 mAde
6
\ \
\ \
4 \ \ \, .........
r-..... i-,...
- -
......... "-..
"- 1'-"-
i"- r--_ r---
O. 2
0.2 0.3 O.S 0.7 1.0 2.0 3.0 S.O 7.0 10 20
I" BASE CURRENT (mAl
MINIMUM CURRENT GAIN CHARACTERISTICS
-----
70
-r---r--------
- r-- -- Ve,~ I Vde
--
TJ 12S'C
50
---
~
~ TJ 7S'C -I"---
z ~
,- TJ 2S'C r-..
~ 30 ~
is
~
i
iii:
iii
1
20 ---""'"'r-
~
V
~
L.---:"
~
-----
----
ITJ
TJ - -S5'C
l5'C
I
- r-- -
-r--- r-
r- ....... ......
r-. ['-......
r-.r-.
r-.r-.
~~
r--....
.........
~
0 ~
r-.r-.
r-......
........
I'-....
r.....
7.0 ......
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT (mAl
LIMITS OF SATURATION VOLTAGES TYPICAL TEMPERATURE COEFFICIENTS

I.8 +1.0
;~PF~lO
I. 6.TJ ~ 25'C
V +0: 5
I J I
8vc for VeElutl
J
125 CIO 12~'CI
~
4
/ 0 '-TC'OlCI-
.2
.0 MAX VIEI ...t ) 5

i-""
- 1 12~'CI
.8
- --+--t-
0
'2s c,0
--
MINV"lu'l
......... - I 5S'C 10 2S'CI
4 Ii ...
./
/
5~
8v.forV8EI ..t,
-2 .0
.2 MAXVCEI ••tl
0 I I -2. 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 o ~ ~ ~ ~ ~ rn ~ ~ ~ ~
Ie, COLLECTOR CURRENT lmAl Ie, COLLECTOR CURRENT lmAl
2:-306
2N2481 (Continued)
TYPICAL SWITCHING CHARACTERISTICS
TURN-ON nME VARlAnONS WITH VOLTAGE RISE nME BEHAVIOR

500 500
PF 10 Vce 10Vdc -
200
"''" ~
TJ -2S"C
200
"~ PF=IO
II,
- - TJ =2S"C
-
I'-.. I"- ~ "- - - TJ =12S"C

100
'" ~ 100
~
0
....... ,. t,@Vce-IOVdc r- ,.;:::
~
50
f-
t.@vcc -3 vdc
'!:'of ~ "-
10
I
........ ......... .... t. 20 ~
i~
~ 1= 1= t.@V •• 2Vdc ~~
5.0 0
i;"'"
2.0 II LJ h@V"IO 10 r,..:..;:: ~ 5.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.n 10 20 30 50 70 100 200
Ie. COlLECTOR CURRENT {mAl Ie. COllECTOR CURRENT !mAl
STORAGE TIME BEHAVIOR FALL nME BEHAVIOR

50 1000
II II t: ... t.-~t. Vee 10Vdc
" "f - PF=IO

I I 11,,- I.,
--T)=25"C
- 500 TJ
TJ
2S"C
125"C
0, "
....
- - TJ =12S"C -
200
" "' ~
~
o, ~ .... " ~
,~ ..... r- PF=2O
]~ I~ r--
I- - - 1-
0
""""" I'
I.....
-
PF=IO
0- PF 20 'Il1o,
20
--
~ ~
7.0 I\. ~ ~
..... 0
5.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
5.0
1.0 2.0 30 5.0 7.0 10 20 30
"""'--50 70 100 200
Ie. COllECTOR CURRENT ImAl Ie, COllECTOR CURRENT ImAl
JUNCnON CAPACITANCE VARIATIONS MAXIMUM CHARGE DATA

10 1000
.~ --MAXIMUM
7.0
r- -- .... -~
II --TYPICAL 700 ~PFIO
500
r
r
Tr 2S"C
TJ=I25"C
L
-
~
;;::
'"
~
='
5.0
t- I- '- -I..l
~
r-If.
~.... ~
fI'o ~
........ i""'-:-.,
~200
~
300
r-
::;~i"""
~
'7
~d Yce= 10Vdc ;I
I c".-J;
'
1''''''.
100
70
3.0 50
30
f-- r- r Vi-liOn 0... ,
Vcc=3Ydc
2.0 20
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (Vdc) Ie. COllECTOR CUKftENT!mA1
2-307
PNP germanium .power transistors for general

CASE 5 purpose power and switching applications.
(TO-36)
MAXIMUM RATINGS
Rating Symbol 212490 212491 212492 212493 Unit
Collector-Base Voltage VCB 70 60 80 100 Volts
C6llector"Emltter Voltage VCES 60 50 70 85 Volts
Emitter-Base Voltage VEB 40 30 60 80 Volts
Collector Current IC 15 Amp
Power Dissipation at TC = 25v C PD 170 watts
Junction Temperatu't"e Range TJ -65 to +110 °c
ELECTRICAL CHARACTERISTICS (Tc = 2S·C unless otherwise noted)
Characteristic Symbol MI. MI! Unit
Collector - Base Culoff Current ICBO mAdc
(VCB = -2 Vdc) - 0.2
Emitter - Base Culoff Current lEBO mAdc

(VEB = -40 Vdc) 2N2490 - :1.0
(VEB = -3~ Vdc) 2N2491 - 3.0
(VEB = -60 Vdc) 2N2492 - 2.0
(YEB = -80 Vdc) 2N2493 - 3.0
Collector Cutoff Current ICEX mAdc

(VCE = -70 Vdc, VBE = 1.5 Vdc) 2N2490 - 3<0
(VCE = -60 Vdc, VBE = 1. 5 Vdc)
(VCE = -80 Vdc, VBE = 1. 5 Vdc)
2N2491
2N2492
-
-
3.0
2.0
(VCE = -100 Vdc, VBE =1.5 Vdc) 2N2493 - 3.0
(VCE = -35 Vdc, VBE ';1.5 Vdc,TC=+1000 C)
(VCE = -40 Vdc, VBE = 1. 5 Vdc, TC=+1000C)
2N2490,2N2491
2N2492
-- 35
35
(VCE = -50 Vdc, V BE =1.5Vdc,TC=+1000C) 2N2493 - 35
Collector-Emitter Breakdown Voltage VCEO Volts

(IC=IA,IB=O) 2N2490
2N2491
50
40
--
2N2492 65 -
2N2493 75 -
Base - Emitter Voltage VBE Vdc
(IC = 5Adc, VCE= -2 Vdc) 2N2490,2N2491
2N2492,2N2493
-- 0.9
0.8
(IC = 12Adc, VCE= -2 Vdc) - 1.5
Collector- Emitter Saturation Voltage VCE(sat) Vdc

(IC = !2Adc, IB = 2Adc) 2N2490, 2N2491
2N2492,2N2493
-- 0.7
0.5
(IC = 1 Adc, VCE = -2 Vdc) 2N2490
2N2491
45
65
--
(IC = 5Adc, VCE = -2 Vdc)
2N2492, 2N2493
2N2490
50
20
-40
2N2491 35 70
2N2492, 2N2493 25 50
(IC = 5Adc, VCE = -2 Vdc, TA = -650 C) 2N2490 15 -
2N2491 25 -
2N2492,2N2493 20 -
(IC = 12Adc, VCE = -2Vdc) 2N2490 8 -
2N2491
2N2492,2N2493
12
10
-
Common Emitter Cutoff Frequency f",e kHz
(Ie = 5A, VCE = -6 V) 5.0 -
Turn-On Time ton /LS
(IC = 5 A, IBI = IB2 = O. 5 A) - 25
Turn-Off Time toff /LS

(IC = 5 A, IBl = IB2 = O. 5 A) - 15
2-308
2N2501 (SILICON)
NPN silicon annular transistor for high- speed switch-
ing applications.
CASE 22
(TO·18)
MAXIMUM RATINGS
Total Device Dissipation @ Po Watts

25 C Ambient Temperature
0
0.36
(Derate 2.06 mW/·C above 25°C)
Storage Temperature Tstg -65 to + 200 ·C
Total Device Dissipation @ Po Watts

25°C Case Temperature 1.2
TOTAL CONTROL CHARGE NORMALIZED CURRENT GAIN CHARACTERISTICS
250 2.4
Vel - I volt
2.2
~ 2.0
I II
200 z
~ lllJ
/. ~
~ 1.8 T,
--
P, = 10
u ~
& ISO
1.6
§ 1.4
I-"" T, =+100 f"".
~ T'=IO~V ...g 1.2
./ io"" ~
...~ ~
~'=250C f-
~ T,= +25
c5 100 ~ 1.0
~ 0.8
./ ...... l II
'"
"""
iii
...
0
~
...~
50
l# :::E
~
z
j
0.6
0.4
i,....o-~
.....
T~
III
I I 55 0 .C
- ~~ I..-
I II -1
0.2
.$ I-" o
0.1 I 10 100
0.2 I 10 Ie. COllECTOR CURRENT ImAde)
I.. BASE CURRENT (mAde)
2-309
2N2501 (Continued)
ELECTRICAL CHARACTERISTICS IT A = 25 0 C unless otherwise noted)

Colleetor-Base Breakdown Voltage BV CBO Vde
(Ie = 10 /.lAde, IE = 0) 40 -
Collector-Emitter Breakdown Voltage BV CEO Vde
(Ie = 30 mAde, IB = 0, Pulsed) 20 -
(IE = 10 /.lAde, Ie = 0) 6,0 -
Collector Leakage Current I CEX nAde
(V CE = 20 Vde, VBE = 3 Vde) - 25
Base Leakage Current IBL
(V CE = 20 Vde, VBE = 3 Vde) - 0.025 /.lAde
(VCE = 20 Vde, VBE = 3 Vde, TA = 150°C) - 50 /.lAde
DC Forward Current Transfer Ratio·
(Ie = 100 /.lAde, VCE = 1 Vde)
hFE
20 -
-
(IC = 1 mAde, VCE = 1 Vde)
30
50 150
-
(IC = 10 mAde, VCE = 1 Vde, TA = -55"C)
20
40
--
(Ie. = 100 mAde, VCE = 1 Vde) 30 -
(Ie = 500 mAde, VCE = 5 Vde) 10 -
Collector-Emitter Saturation Vqltage* VCE(sat) Vde
(Ie = 10 mAde, IB = 1 mAde) - 0.2
(IC = 50 mAde, IB = 5 mAde) - 0.3
(Ic = 100 mAde, IB = 10 mAde) - 0.4
Base-Emitter Saturation Voltage* VBE(sat) Vde
(IC = 10 mAde, IB = 1 mAde) - 0.85
(Ie = 50 mAde, IB = 5 mAde)
(IC = 100 mAde, IB = 10 mAde)
-- 1.0
1.2
(V CB = 10 Vdc, IE = 0, f = 100 kHz) - 4.0
(V EB = 0.5 Vde, Ie = 0, ( = 100 kHz) - 7.0
Small Signal Forward Current Transfer Ratio hie -
(VCE = 20 Vdc, Ie = 10 mAde, f = 100 MHz) 3.5 -
(V CE = 20 Vdc, Ie = 10 mAde) 350 -
Charge Storage Time Constant 'TS ns
(IC = Ia1 = IB2 = 10 mAde) - 15
Total Control Charge QT p.e
(IC = 10 mAde, IB = 1 mAde) - 60
Active Region Time Constant 'TA ns
(Ie = 10 mAde) - 2.5
·Pulse Test: Pulse width ;:; 300 p.s, duty cycle;:; 2%

COLLECTOR·EMITTER SATURATION VOLTAGES versus BASE CURRENT
0.7
Ic/l.= 10
TJ = 25°C
0.6
u;
~
...
~
(!I
0.5
\
~
'-
-
Ie = 100rnA
0
". 0.4
...:=""
;j
...
0
0.3
" r.- 'i+
Ic= SOmA
j Ie = lOrnA
0.2
0.1
---
0.01 0.1 10 100
I.. BASE CURRENT (mAde)
2-310
2N2501 (Continued)
BASE·EMITTER VOLTAGE
versus COLLECTOR CURRENT TEMPERATURE COEFFICIENTS
2.0 1.0
Ill~/I, =
I
10
I
~ 0.5
-l t
in
~ 1.6
~
> 9w:I2J to 100°C) ~~
... T, = 25°C
lell, = 10
g
isc:;
'"~ 1.2
0 -VICE 1"'1
0 Bvcl 55 12iW!
> it
...'" .... ~ ""-0.5
I
1~:tI~IIIIIIIIII~11111 im
1= 1IIIll
:iii
.....,.l\!
0.8
-'"
CD
J 0.4
0
10 100 0.2 1 10 50 100
COMMON EMITTER DC
ACTIVE REGION TIME CONSTANT L.EAKAGE CHARACTERISTICS
Vee - +20 V
10.0
7.0
~~~ = 115VI I 5.0
T, =1 1500C
g 6.0
... I
...
!ii 1.0
j T, 100oC_ -
~ 5.0 '"
i:l 0.5
•ri VOLT~E
z
o
~
~ 4.0 .-- V,. THRESHOLD
::;;
;:::
is 3.0 \ ~
~ 0.05
0.1
~ Vee=3V
I \ I
~ 2.0 ~0.01 T, 2Lc
ti ~
~ 1.0
ir--.. 0.005
o
+0.5
! 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
0.1 1.0 10 100 200
Ie. COLLECTOR CURRENT (mAde) VOl. BASE-EMITTER REVERSE BIAS (VOLTS)
RISE TIME FACTOR FALL TIME FACTOR
2.0
;:. ~ ... i""""
.'
1\ ~I'
.
J 1.1
~ \ /
i 1.6
\ II
0
~ \ ~
!... \ .J
~ \.4
'\
...:E ~
~
.~ ./
.!il
iii
1.2
......... i'-o.. I-'"
r-
1.0 o ~~
\ 10 20 .02 .05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
/Jo/fJc
2-311
2N2526 (GERMANIUM) PNIP germanium power transistors for high-voltage
2N2527 power switching applications.
2528. ~ CASE 11A ~ CASE 4--04

2N . ~ ~ (TO-3modified) (TO-41).
For units with solder lugs attached. specify

devices MP2526 etc. (T0-41 package)
MAXIMUM RATINGS
Collector-Emitter Voltage VCE 80 120 160 Vdc
Collector-Base VCB 80 120 160 Vdc

Emitter-Base VoUage VEB 5.0 Vdc
Collector Current - Continuous IC 10 Adc

Emitter Reverse Current IE 1.5 Adc
(Surge 60 Hz Recurrent)

Temperature Range
Thermal Resistance, Junction to Case eJC 1.0 °cjw
POWER·TEMPERATURE DERATING CURVE z: 100

o 85 WATTS MAXIMUM
The maximum continuous power is related to ~ 80
maximum junction temperature by the thermal ..............
resistance factor. This curve has a va~ue of 85
watts at a case temperature of 2S"C and is 0
watts at HO"C with a linear relation between
I... i_ :~
a: 20
l~
I'-..
....... ~.20~C
the two temperatures such that: ~ 0
110· - Tc p.. 0 25 50 75 100 125
Allowable PD 1.0 Watts = Tc. CASE TEMPERATURE (OC)
2N2527
10
0
Sm. 1m. 500 .. ~ .. 0
0
5.1. 1~' sdo,..' 12S0~' I
20
0
5 ... 1m. 500 .. 1 ~
~ .... 1=1=
50p.s __: : E E
100..
ORLes;'= FF
5
4
3
....... , .'\
OR lESS ~ 4
5
3 , I'
t-t- 5
4
3 M. I..:l.
OR lESS
2
\ r--... I'\. ,\.'l\
! 2 I" r-. ~~1 2 I\.' L"- ~II..\
r-.,:::: .........
t:"h ~ ~
T
~ ~ r-. i\ ,,~
1 I\.
I 1 1
,
.5 ~ o. 5 .5
",
.4f-- ~d' .4
.3 ~ g.4
.3 .3
L ~
.2
.1
8S-WAn
"-
"-
u 0.2
.1
IS-WATT
250 & CASE TEMPERATURt.
i' " 2
.1
15-WATI
E~!ll~2~rfr~~~rJRE
'~
de
.OS .OS de .os
.04 .04 .D4
.0 3 .03 .03
.02 .02 .0 2
\
.01 1 .0 1
o ~ ~ ~ ~ ~ H ro 10 ~ .0 0 10 20 30 ~ SO H ro 80 ~ 100 110120130 o ao ~ 10 10 100 120 l~ 1H lID
COLLtCTOll.£MlmR VOlTAGE MIlTS) COliECTOll.£MmER VOlTAGE ('101 TSI COLlECTOR-EMInER VOLT_ tyOLTS)
VCE limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum Tl, the power-temperature
Area to avoid causing a collector-emitter short. state and pulse P9wer conditions.
2-312
ELECTRICAL CHARACTERISTICS (T c = 25"C unless otherwise noted)
Characteristic Symbol Min Typ I Max I Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage* BV CEO(sus)• Volts
(IC = 100 mAdc, IB = 0) 2N2526 80 - -
2N2527 120 - -
2N2528 160 - -
(IE = 50 mAdc, IC = 0) 5,0 - -
Collector Cutoff Current* I CEX • mAdc
(V CE = 80 Vdc, VBE (off) = O. 2 Vdc, T C = 100° C) 2N2526 - - 35
(V CE = 120 Vdc, V BE (off) = O. 2 Vdc, T C = 100' C) 2N2527 - - 35
(V CE = 160 Vdc, VBE(off) = 0.2 Vdc, TC = 100 C
C) 2N2528 - - 35

(V CE = 80 Vdc, RBE = 100 ohms) 2N2526 - - 25
(V CE = 120 Vdc, RBE = 100 ohms) 2N2527 - - 25
(V CE = 160 Vdc, RBE = 100 ohms) 2N2528 - - 25
Collector Cutoff Current I CBO mAdc

(V CB = 80 Vdc, IE = 0) 2N2526 - - 3.0
(V CB = 120 Vdc, IE = 0) 2N2527 - - 3.0
(V CB = 160 Vdc, IE = 0) 2N2528 - - 3.0
(V CB = 2.0 Vdc, IE = 0) - - 150 IlAdc
ON CHARACTERISTICS
(IC = 3.0 Adc, VCE = 2.0 Vdc) 20 - 50
DC Transconductance gFE mhos

(IC = 3.0 Adc, VCE = 2.0 Vdc) 4.0 6.0 -

V CE(sat)
(IC = 10 Adc, IB = 1. 0 Adc) - O. 5 0.8

VBE(sat)
(IC = 10 Adc, IB = 1. 0 Adc) - 0.8 1.2
(IC = O. 5 Adc, VCE = 12 Vdc, f = 30 kHz) 10 15 -
Rise Time t
r
- 5. 5 - IlS
Storage Time t
s
- 1.2 - IlS
Fall Time tf - 2.0 - Ils
TYPlCAL INPUT CHARACTERISTICS
COLLECTOR CURRENT ,ersus BASE CURIIENT ALL TYPES COLLECTOR CURRENT ,ersus DRIVE VOLTAGE
IOr---~---r---r---'----'---'---, IOr-----r----r----rr--,-,-~_,r_--·
i 8
re 4 1-----t-----I7''I--t----+----I----;
~.2 2 ~---+-_++.I----+----+---___1f----1
oL....""....:;_......I_ _-'-_-.L_ _..... _~
100 200 300 400 soo 600 700 o 0.5 1.0 1.5
I" BASE CURRENT (mAl V", BASE·EMITTER VOLTAGE (VOLTSI
2-313
SWITCHING TEST CIRCUIT

PULSE CONDITIONS; Ie = 3 Ade, I, = 300 mAde
DC CURRENT GAIN versus COLLECTOR CURRENT
50r----.----.-----r---~----~--~
40 1---1t-+.......---t-----I----i-------I----J
MERCURY
SWITCH 0.5 /IF'
40
10
+25°C
-r-._-L+IOOOC
10 I---,.----t-----I---i-------I-.:..::.:.~
50
4V 10
+ Ie, COLLECTOR CURRENT (AMPERES)
2-314
NPN silicon annular Star transistors for high-speed
"
CASE 22
(TO-18)
2N2539
2N2540
CASE 31
(TO-5)
2N2537
2N2538
switching.
MAXIMUM RATINGS
2N2S37 2N2539
Rating Symbol 2N2S38 2N2540 Unit
(TO·S) (TO·18)
Collector-Base Voltage V'CB 60 60 Vdc
Collector-Emitter Voltage VCER 40 40 Vdc
Emitter-Base Voltage VES 5.0 5.0 Vdc
Total Device Dissipation Po watts

2SoC Case Temperature 3 1.8
Derate above 2SoC 17.2 10.3 mW/"C
Total Device Dissipation Po watts

2SoC Ambient Temperature 0.8 O. ~
Derate above 2SoC 4.S7 2.S6 mW/"C
Junction Temperature TJ -65 to .200 °C
Storage Temperature Tstg -65 to .200 °c
TOTAL CONTROL CHARGE TEST CIRCUIT ACTIVE REGION TIME CONSTANT TEST CIRCUIT
+8.3V +15.2 Vdc +8.3V +15.2 Vdc - - - GRouND PLANES
JL
PULSE AT "A"
100
TO OSCILLOSCOPE
RISE TIME ,of 5 ns
Z;"= 10Mn
JL INPUT
100 I
Ilk
+-......""'-......- -...
SIGNAL
, YOUT
TO OSCILLOSCOPE
RISE TIME ,of 5 ns
100 INPUT TRANSITION. Z;" = 10Mn
INPUT'
TIME ,of 2 ns _
IMPEDANCE = san
_.--'lli'-+-{
1510
, 50
OUTPUT
100 50 I
...1. t. == 'TA{jfR ::::: 10 to 90% Rise Time

b = TAfJeF ::::: 10 to 90% fan Time
~l'
D% 50mVma,
'ADJUST INPUT FOR a TO +8.3V R=~o In( ~o )
PULSE AT POINT "A"
TRANSITION TIME ,of 2 ns
90% rr: ~
10 ns max
F=.!};:,
~c
In(l+~)
IJc
T .. = I•• t,
~o ::::: hFE at Edle of Saturation
Output Waveform I" /Jc = Ie in Saturation / 111 (Base "OFF" Currlnt)
/JF = Ie In Saturation / 1'1 (BaSI "ON" Current)
2-315
ELECTRICAL CHARACTERISTICS ITA = 250C unless otherwise noted)

(V CB = 40 Vde, IE = 0) - 0.250
(V CB = 40 Vde, IE = 0, TA = 150°C) - 200
Emitter Cutoll \,;urrent lEBO /LAde
(V EB = 3 Vde, IC = 0) - 0.05
Collector I.;uton \.;urrent lCEX /L AQe
(V BE = 0.2 Vde, VCE = 20 Vde) - 0.250
Sase \.;uton current lSL /LAde
(VSE = 0.2 Vde, V CE = 20 Vde) - 0.250
(VSE = 0.2 Vde, VCE = 20 Vde, TA = 150°C) - 200
Collector-Base Sreakdown Voltage SVCSO Vde
(Ie = 10 /LAde, IE = 0) 60 -
Collector-Emitter Sreakdown Voltage SVCEO Vde
(Ie = 100 mAde, pulsed, Is = 0) 30 -
Collector-Emitter Breakdown VOltage nVCER Vde
(Ic = 100 mAde, pulsed, RSE ~ 10 \1) 40 -
Emitter-Base Breakdown voltage nVESO vde
(IE = 10 /LAde, IC = 0) 5.0 -
Collector Saturation Voltage * VCE(sat) Vde
(IC = 150 mAde, IS = 15 mAde) - 0.45
(IC = 500 mAde, IS = 50 mAde) - 1.6
Sase-Emitter Saturation Voltage VSE(sat) Vde
(IC = 150 mAde, IS = 15 mAde) (I) - 1.3
(Ic = 500 mAde, IS = 50 mAde) . - 2.6
(IC = 1 mAde, VCE = 10 Vde) 2N2537, 2N2539 20 -
2N2538, 2N2540 35 -
(IC = 10 mAde, VCE = 10 Vde) 2N2537,
2N2538,
2N2539
2N2540
30
50
--
(IC = 150 mAde, VCE = 10 Vde) (11 2N2537, 2N2539 50 150
2N2538, 2N2540 100 300
(Ic = 500 mAde, VCE = 10 Vde) (1J 2N2537, 2N2539 20 -
2N2538, 2N2540 30 -
(VCS = 10 Vde, IE = 0, f = 100 kHz) - 8.0
(V ES '" 0.5 Vde, Ie = 0, f = 100 kHz) - 25
Small Signal Forward Current Transfer Ratio hfe
(VCE = 20 Vde, IC = 20 mAde, f = 100 MHz) 2.5 -
(I) Pulse Test: Pulse wiath ;:; 300 /Ls, duty cycle;:; 2%
Characteristic Symbol Mu. Unit
Total Control Charge QT 750 pC
Storage Time TS ns
(Ie = IBI = IS2 : 20 mAde, VCC = 5V) 20
Aetive Region Time Constant TA 2.0 ns
Turn-on Time ns
ton
(lSI = IS2 = 15 mAde, Ie = 150 mAde, 40
VCC = 7 Vde, RL = 40 n)
Turn-off Time toff ns
(ISI = IB2 = 15 mAde, Ie = 150 mAde, 40
VCC = 7 Vde, RL = 40 $1)
2-316
2N2552 thru 2N2559
2N2560 thru 2N2567

For Specifications, See 2NI042 Data.
Industrial-type, silicon controlled rectifiers in a

"diamc;;md" package for applications requiring a high
surge-current rating or low thermal resistance.
CASE 61 CASE 54
(TO-41) (TO-3 Modified)
For units with pins (TO-3 Modified) specify devices MCR649AP-l(2N2573) thru MCR649AP-.](2N2579).
MAXIMUM RATINGS <TJ = 125°C unless otherwise noted)

Peak Reverse Blocking Voltage. VRSM(rep)* Volts
2N2573 25
2N2574 50
2N2575 100
2N2576 200
2N2577 300
2N2578 400
2N2579 500
Forward Current RMS (all conduction angles) iT(RMS) 25 Amp
Circuit Fusing Considerations l<1t A2s

(T J ; _65 0 to +125 0 C, t ~ 8.3 ms) 275
Peak Surge Current iTSM Amp

(One Cycle, 60 Hz, TJ ; -65 to +125 0 C) 260
Peak Gate Power - Forward PGM 5.0 Watts
Peak Gate Current - Forward iGM 2.0 Amp

Reverse VGRM S.O

'VRSM for all types can be applied on a continuous dc basis without incurring damage.
VRSM Ratings apply for zero or negative gate voltage.
2-317

Peak Forward Blocking Voltage* VDRM* Volts
(TJ = 125°C) 2N2573
2N2574
25
50
-
-- -
-
---
2N2575 100
2N2576
2N2577
200
300
--
-
--
2N2578 400
2N2579 500 -
Peak Forward Blocking Current IDRM mA
(Rated VDRM with gate open, T J = 125 0 C) - 0.6 5.0
Peak Reverse Blocking Current IRRM mA

(RatedVRSM' TJ = 1250 C) - 0.6 5.0
Gate Trigger Current (Continuous dc) IGT mA

(Anode Voltage = 7 Vdc, RL = 100 'I) - 20 40
Gate Trigger Voltage (Continuous dc) VGT Volts

(Anode Voltage = 7 Vdc, RL = 100 'I) - 1.0 3.5
(V D RM = Rated;R L = lOOn, T J = 1250 C) VGNT 0.3 - 3.5
Forward On Voltage VT Volts

(IT = 20 Adc) - 1.1 1.4
Turn-On Time (td + t r ) tgt /LS
(IGF 50 mA, IT = lOA) - 1.0 -
Turn-Off Time tq /LS
(IT = 10 A, IR = 10 A, dvldt = 20 VI/Ls, T J = l25 0 C) - 30 -
(VDRM = rated voltage)
Forward Voltage Application Rate dvldt VI/LS

(Gate Open, T J = 1250 C) - 30 -
Thermal Resistance (Junction to Case) 6JC - 1.0 1.5 °C/w
*VDRM for all types can be applied on a continuous dc basis without incurring damage.
VDRM ratings apply for zero or negative gate voltage.
2-318
MAXIMUM ALLOWABLE
2N2573 thru 2N2579 (continued) FORWARD GATE
~~~R:~~MP GATE TRIGGER CHARACTERISTICS
2.0
3.SVOLTS~
MINIMUM
1.0 GATE VOLTAGE
MAXIMUM ALLOWABLE NON-RECURRENT REQUIRED TO TRIGGE I
SURGE CURRENT >~UNITS
~cCu I
0::- !«:J ~ I
!
0::- 300
~
=-
~5 AMJ R~S
+
J '"
:':
....
ffi
ffi '" -
g~ +
~Z 0
I
I
AS A TRIGGER CIRCUIT DESIGN CRITERIA
ALL UNITS WILL TRIGGER AT ANY VOLTAGE
AND CURRENT WITHIN THIS AREA
i
_ 250
To 6S TO 12S"C
'"
'"
13
0.2
;!~ ~
~~ ~f< il
I
~
::>
<.)
w
<0 I 40 mA MINIMUM
GATECURRENT REQUIRED
~ ............ .... 0.1
!S ~ ..." I TO TRIGGER ALL UNITS
~~ ........ r- '""'t;; ~\J I (12S"C-2smA)
200 I (-65°C - 80 mAl
L __________ _
~ r-......
.OS
"'
~ TYPICAL
"'~ 150
....... TRIGGER
POINT
~
:z::
.02
~ 100
1 4 10 20 40 60 3 4 S 6 7 10
CYCLES AT 60 Hz 0.3 VGT. GATE VOLTAGE (VOLTS)
(T, =
2SoC -ANODE @ 6 VOLTS)
MAXIMUM ALLOWABLE CASE TEMPERATURE LOW CURRENT LEVEL

12S 100
120
50 / /'
115 ./ /
0° I 180° "-
r 110 I---~~~~-~ONDUCTI~?-
:E
:$
.... 20 -TYPICAL " ;?
MAXIMUM-
~ ANGLE
::>10S ~--~~~~~~~--t---~---~
~
~
::>
<.)
10
\! P
~ 100 ~
5.0
~ ~
~ 95 ~
'"
::>
2.0
II I - - - T, 125°C_=
~ 90 :il
z II 1/ --T,=2SoC
;." i
85 z 1.0
~
80 ;'!;
0.5
.f
75
70 0.2
I 'I
I
6S 0.1 I :I
o 10 15 20 2S 0.0 0.5 1.0 1.5 2.0 2.5
IT(AV). AVERAGE FORWARD CURRENT (AMP) VT.INSTANTANEOUS FORWARD ON VOLTAGE (VOLTS)
MAXIMUM TRANSIENT THERMAL RESISTANCE

JUNCTION TO CASE POWER DERATING CURVE
1.6 30
28
MAXIMUM POWER DISSIPATION
1.4
'" 26 WITH UNIT MOUNTED r--
V 24
22
ON THE MS·10 HEAT SINK
USING DC4* AND FREE
CONVECTION COOLING
I--
r--
/ 5
~
20
"
ASSUM ING MAX IMUM FORWARD
DROP AND 8,c l.S"C/W,
=
=
= r--
""
8cs 0.2"C/W AND 80. 3.0"C/W
z 18
0
/ CURVE DEFINES TEMP. RISE
OF JUNCTION ABOVE CASE E 16
I
FOR SINGLE LOAO PULSE OF
DURATION t.
PEAK ALLOWABLE DISSIPATION
IN RECTIFIER FOR TIME t
~
0
'"
~
~
14
12 """- I"-
V EQUALS 12S"C (MAX. To) 10
"
MINUS MEASURED CASE TEMP., .f
DIVIDED BY THE TRANSIENT
THERMAL RESISTANCE.
\..
u
.. D.2
/ I p _ TJ(mu)-T c _
r- *DC4 IS DOW CORNING NO.4
SILICONE LUBRICANT
~
.,/ "'- ~
p. . k - (jJC
~ I I I
0.0
.001 .002 .OOS .01 .02 .OS 0.1 0.2 O.S 1.0 10 20 30 40 SO 60 70 80 90 100 110 120 130
t, TIME (s) TAo AMBIENT TEMPERATURE (OC)
2-319
2N2635 (GERMANIUM)

CASE 22
(TO·18)
MAXIMUM RATINGS ITA: 250 C unless otherwise noted)

Collector Current (Continlious) Ie 100 mAdc
Device Dissipation @ 25°C PD 150 mW

Ambient Temperature
(Derate 2mW/oC above 25°C) 2.0 mW/OC

-3.5V
SCOPE
I,,,;; 3.5ns
R,• i!o 100Kn
INPUT WAVEFORM:
I, = I,";; Ins
PW i!o 0.5,..5
+1.25Vlj
0- - - C,,.;; 6 pF
(includes C,.)
C,.";; 3 pF
DUTY CYCL~ ,.;; 50 %

-5.4V
2-320
2N2635 (Continued)
Characteristic Svmbol Min Typ Max Unit

(Ie = 100 /l Adc, IE = 0) 30 50 ---
(Ic = 2 mAde, IB = 0) 15 30 ---
(IE = 100 /l Adc, Ie = 0) 2.5 4.5 ---
Collector-Base Cutoff Current ICBO /lAdc
(VCB = 25V. IE = 0) --. 1.0 5.0
(VCB = 25V, IE = 0, TA = +55 0 C) --- 5.0 20

(VEB = lV, Ie = 0) --- 2.0 20
Static Forward Current Transfer Ratio hFE ---

(Ie = 10 rnA, VCE = 0.5V) 30 --- ---
(Ic = 50 rnA, VCE = 1V) 45 --- 300
(Ic = 50 rnA, VCE = lV, TA = _55°C) 25 --- ---
(Ic = 100 rnA, VCE = 1V) 30 --- ---
(Ie = 10 rnA, IB = 0.5 rnA) --- 0.36 0.45
(Ie = 50 rnA, IB = 2.5 rnA) --- 0.47 0.70
(Ic = 50 rnA, IB = 2.5 rnA, T A = -55°C) --- 0.56 0.85
(Ic = 100 rnA, IB = 10 rnA) --- 0.57 0.90

(IC = 10 rnA, IB = 0.5 mAl --- 0.13 0.20
(Ie = 50 rnA, IB = 2.5 rnA) --- 0.20 0.40
(IC = 50 rnA, IB = 2.5 rnA, TA = +55°C) --- 0.22 0.45
(IC = 100 rnA, IB = 10 rnA) --- 0.23 0.75
Small-Signal Forward Current Transfer Ratio Ihfel ---

(Ic = 30 rnA, VCE = 2V, f = 100 MHz) 1.5 --- ---
(VCB = 5 V, IE = 0, f = 1 MHz) --- 2.5 5.0

(VBE = 1V,IC = O,f = 1 MHz) --- --- 4.0
Delay Time td --- 15 20 ns
Rise Time tr --- 20 30 ns
Storage Time ts --- 100 185 ns
Fall Time tr --- 35 65 ns
2-321
Dual NPN silicon annular transistors designed for

low -level, low-noise differential amplifier applications.
Can be used in complementary circuits with 2N3806
series or 2N2802 series, for TO-89 flat packages see
2N3043-2N3048 series.
Case 654-04 PINS 4 AND 8 OMITTED

TO-78
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Temperature Range TJ , Tstg -65 to +200 °c
One Both
Side Sides
Total Device Dissipation @ TA = 25°C PD 300 600 mW
Derate above 25°C 1. 72 3.43 mWjOC
Total Device Dissipation @ TC = 25°C PD 600 1200 mW

Derate above 25°C 3.43 6.87 mWjOC
2-322
ELECTRICAL CHARACTERISTICS (each side) (T A = 25°C unless otherwi'Se noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (11 BVCEO(sU8) Vdc
(lC = 10 mAde, =0) Ia 45 -
Collector-Emitter Cutoff Current I CEO ;tAdc
(VCE = 5 Vde, =0) Ia - 0.010
Collector Cutoff Current I CBO ;tAde

(VCB = 45 Vdc, IE = 0) - 0.010
(VCB = 45 Vdc, IE =0, TA = +150'C) - 10
Emitter-Base Cutoff Current lEBO ;tAde

(V ER = 5 Vde, IC = 0) - 0.010
ON CHARACTERISTICS
DC Current Gain ( 11 hFE -
(IC = 10 ;tAde, VCE = 5 Vde) 2N2639, 2N2640, 2N2641 50 300
2N2642, 2N2643, 2N2644 100 300
(IC = 10 ;tAde, VCE = 5 Vde, TA = -55'C) 2N2639, 2N2640, 2N2641 10 -

2N2642, 2N2643, 2N2644 20 -
(IC = 100 ;tAde, VCE = 5 Vdc) 2N2639, 2N2640, 2N2641 55 -
2N2642, 2N2643, 2N2644 110 -
(IC =I mAde, VCE = 5 Vde) 2N2639, 2N2640, 2N2641 65 -
2N2642, 2N2643, 2N2644 130 -
Collector-Emitter Saturation Voltage' (1) Vdc
VCE(sat)
(IC = 10 mAde, Ia
=0.5 mAdc) - 1.0
Base-Emitter SaturatIon Voltage l t 1) Vde
VBE(sat)
(IC - 10 mAde, IB = 0.5 mAde) 0,6 1.0
(lC = I mAde, VCE = 5 Vdc, I =20 MHz) 35 -
(V CB - 5 Vde, IE - 0, I =I MHz) - 8,0
Input Impedance h ib Kohma

(IC = I mAdc, VCB = 5 Vdc, I = I kHz) 25' 32
Reverse Voltage Transfer Ratio h rb X 10-6

(IC = I mAdc, VCB = 5 Vdc, I =I kHz) - 600

(IC =1 mAde, VCB = 5 Vde, I =I kHz) 2N2639, 2N2640, 2N2641
hIe
65 600
-
2N2642, 2N2643, 2N2644 130 600
Output Admlttaoee hob ~mh08

(IC = I mAde, VCB = 5 Vde, I-1kHz) - 1.0
Noise Figure NF dB
(IC = 10 ;tAde, VCB Vde, =5
RS = 10k ohms, Bandwidth = 10 Hz to 15 kHz) - 4.0
DC Current Gain Ratio ••
(IC - 10 ;tAde, VCE = 5 Vde) 2N2639, 2N2642
hFEI/hFE2**
0.9 1.0
-
2N2640, 2N2643 0.8 1.0
Base Voltage Differential IVBEI - VBE2 1 mVdc

(IC = 10 "Ade, VCE = 5 Vde) 2N2639, 2N2642
2N2640, 2N2643
-- 5.0
10
Base Voltage Differential Temperature Gradient AIVBEI - VBE2 1 ;tV/'C

(lC = 10 ;tAde, VCE = 5 Vde, T A = -55 to +125'C) 2N2639, 2N2642 - 10
2N2640, 2N2643 ATA
- 20
(11Pulse Test: Pulse Width = 300 ,,8; Duty Cycle ~ 2%

··The lowest hFE reading is taken as hFEl for this test.
2-323
2N2646 (SILICON)
2N2647
Silicon annular PN unijunction transistors designed

for use in pulse and timing circuits, sensing circuits
and thyristor trigger circuits.
CASE 22A
(TO-18 Modified)
(Lead 3 connected to case)
MAXIMUM RATINGS (TA =2S·Cunlessotherwisenoted)
RMS Power DisSipation* PD 300* mW
RMS Emitter Current Ie 50 mA
Peak Pulse Emitter Current** ie 2.0 ** Amp
Emitter Reverse Voltage VB2E 30 Volts
Interbase Voltage VB2B1 35 Volts

* Derate 3.0 mW/oC increase in ambient temperature. The total power dissipation
(available power to Emitter and Base-Two) must be limited by the external
circuitry.
** Capacitor discharge - 10 JJ.F or less, 30 volts or less.
2-324
ELECTRICAL CHARACTERISTICS IT, ~ 25·C""'....."'~"."....)

intrinsic Standoff Ratio q
-
--
(VB2BI = 10 V) (Note I) 2N2648 0.56 0.75
2N2847 0.68 0.82
Interbase Resistance RBB K ohms
(VB2BI = 3 V,IE = 0) 4.7 7.0 9.1
Interbase Resistance Temperature Coefficient aR BB %1°c
(VB2BI = 3 V,IE = 0, TA = _55°C to +1250 C) 0.1 - 0.9
Emitter saturation Voltage. VEBI(sat) Volts

(VB2BI = 10 V, IE = 50 rnA) (Note 2) - 3.5 -
Modulated Jnterbase Current rnA
(V B2BI = 10 V, IE = 50 mAl
Emitter Reverse Current
IB2 (mod)
- 15 -
lEO /LA
(VB2E = 30 V. IBI = 0) 2N2848 - 0.005 12
2N2647 - 0.005 0.2
Peak Point Emitter Current Ip /LA
(VB2BI = 25 V) 2N2646
2N2847
-- 1.0
1.0
5.0
2.0
Valley Point Current
Iv mA
(V B2BI = 20 V, RB2 = 100 ohms) (Note 2) 2N2648
2N2647
4.0
8.0
6.0
10
-18
Base-Qne Peak Pulse Voltage VOBI Volts
--
(Note 3, Figure 3) 2N2648 3.0 5.0
2N2647 6.0 7.0
NOTES
1. Intrinsic standoff ratio, 2. Use pulse techniques: PW = 300 p.s duty cycle ";;2% to avoid
'I.is defined by equation: internal heating due to interbase modulation which may result in
erroneous readings.
'I=~)
Vln ,
Where Vp = Peak Point Emilter Voltage 3. Base·One Peak Pulse Voltage is measured in circuit of Figure 3.
V828 , = Interbase Voltage This specification is used to ensure minimum pulse amplitude for
VIE8,I = Emilter to Base·One Junction Diode Drop applications in SCR firing circuits and other types of pulse circuits.
(=0.5 V @ lO pAl
FIGURE 1- UNIJUNCTION TRANSISTOR SYMBOL FIGURE 2- STATIC EMITTER CHARACTERISTIC FIGURE 3- YOII TEST CIRCUIT
AND NOMENCLATURE CURVES (Typical Relaxation Oscillator)
(Exauara'eeI to Show Details)
- I"
CUTOfF
REGION
v,
NEGATIVE
RESISTANCE" SATURATION
REGION
I
I ~PEAK POINT I
i
REGION
R, R"
V,
+ 20V
-
IOkll 100 {l
I, I
I
: EMITTER TO
BASE·l
: CHARACTERISTIC
1
v,
VEI!!.atl
Vv
+----
t -----
-J--- , •
, VALLEY POINT \
-tJl---
YOI '
I
I
I
I
t
I I
j I
- -t~~-------7lv----~~ ~
lEO
2-325
2N2652 (SILICON)
2N2652A
Dual NPN silicon transistors for use as a differen-

tial amplifier.
~.@5 PINS 4 AND 8 OMITIED

Case 654-04
TO·78
All leads Electrically Isolated from Case


stg
One Both
Side Sides
Total Device Dissipation @ T A = 25° C PD 0.3 0.6 Watt
Derate above 25° C 1. 72 3.43 mW/oC
Total Device Dissipation @ T C = 25° C PD 1.0 2.0 Watts
TC = 100·C 0.57 1.14 Watt
Derate above 25° C 5.7 11. 4 mW/oC
2-326
ELECTRICAL CHARACTERISTICS (eaoh side) (T, = 25'C "'ess otherNise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage t11 BV CEO Vdc
(IC = 20 mAdc, IB =0) 60 -

(IC = 100 /lAdc, IE =0) 100 -
(IE = 100 /lAdc, IC =0) 7.0 -
(V CB = 50 Vdc, IE =0) 2N2652 - 0.010
2N2652A - 0.002
(V CB =50 Vdc, IE =0, TA =150'C) 2N2652 - 15
2N2652A - 10
~BO /lAdc
(V BE = 5.0 Vdc, IC =0) 2N2652 - 0.010
2N2652A - 0.002
ON CHARACTERISTICS
(IC = 100 /lAdc, V CE = 5. 0 Vdc) 35 -
(IC =1. 0 mAdc, V CE = 5.0 Vdc) 50 200
(IC = 1. 0 mAdc, V CE = 5.0 Vdc, TA = -55'C) 15 -
VCE(sat)
(IC = 50 mAdc, IB = 5.0 mAdc) - 1.2

VBE(sat)
(IC = 50 mAde, IB = 5.0 mAdc) - 0.9
(IC = 50 mAdc, VCE =10 Vdc, f =20 MHz) 60 -
Output Capacitance pF'
Cob
(V CB =10 Vdc, IE =0, f =1. 0 MHz) - 15
(V BE = 0, O. 5 Vde, IC = 0, f = 1. 0 MHz) - 85
Input Impedance h. k ohms

Ie
(IC =1. 0 mAde, V CE =5.0 Vdc, f =1. 0 kHz) 1.0 10.5

(IC = 1.0 mAdc, VCB =5.0 Vdc, f =1.0 kHz) 20 35

(IC = 1. 0 mAde, VCE =5.0 Vdc, f =1. 0 kHz) 50 300
Output Admittance h Jlmhos

oe
(IC = 1. 0 mAde, V CE =5.0 Vdc, f =1. 0 kHz) 4.0 50
Noise Figure NF dB
(IC =O. 3 mAdc, V CE =10 Vdc, ~ =510 ohms, B. W. = 1.0 Hz,
f =1. 0 kHz) 8.0
DC Current Gain Ratio** hFE/hFE2" -
(IC = 100 /lAde, V CE = 5.0 Vdc) 2N2652 0.85 1.0
2N2652A 0.9 1.0
(IC = 1. 0 mAdc, V CE =5.0 Vdc) 2N2652 0.85 1.0
2N2652A Q.9 1.0
Base Voltage Differential IVBE1-VBE21 mVdc
(IC = 100 /lAdc, VCE =5.0 Vdc) - 3.0
(IC = 1. 0 mAde, VCE =5.0 Vdc) - 3.0
Base Voltage Differential Gradient

(IC =100 /lAde; V CE =5.0 Vdc, T A = -55 to +125'C) 1 V BE1- V BE2)
l!.TA
- 10
/lV/'C
t1l Pulse Test: Pulse WIdth ~ 300 /lS, Duty Cycle ~ 2.0%.
** The lowest of the two hFE readings is taken as hFEl f~r the purpose of measurement.
2-327
2N2696 (SILICON)
2N2927
PNP SILICON ANNULAR TRANSISTORS PNPSILICON

SWITCHING
designed for use in medium-speed, non-saturated switching TRANSISTORS
applications_
• High Collector-Emitter Breakdown Voltage -

BVCEO =25 Vdc @ IC = 100/!Adc
• High Collector-Base Breakdown Voltage -
BVCBO = 25 Vdc@ IC = 100/!Adc
MAXIMUM RATINGS
2N2696
I 2N2927
Collector-Emitter Voltage VeEO 25 Vde
Collector-Sase Voltage VeB 25 Vde
2N2696 2N2927
Collector Current -'Continuous Ie 500 mAde
T- ~
Total Device Dissipation@TA = 25°C Po 0.36 0.8 Watts
l"'" r
0.335 DIA
0.370
nJ
i -1". " . -hli
h
Derate above 25°C 2.06 4_56 mW/oe 0.305 DIA 0.240
1llI"1 ~
0.335 • I 0.260
Total Device Dissipation @Te= 25°C Po 1.2 3.0 Watts
Derate above 25°C 6.85 17.1 mW/oe
Operating and Storage Junction TJ,Tstg -65 to +200 °e
Temperature Range
0.019
*tndicates JEOeC Registered Data. 1.5
H~j
MIN
FIGURE 1 - TURN-ON AND TURN-OFF TIME TEST CIRCUIT

~DlA ~
VBB +4.0 V
0.100
330
TO OSCI LLOSCOPE
T
D.OZ8
INPUTl>100 kOHMS [041
0:LJ 1.0f-_...._-A,J14V0Ir-_t-i
tr<1.0 ns
Pin 1. Emitttr Pin 1. EmiUI!f

9;::SESOURCE 2.8asa 2.Base
RISETIME < 6.0 n. 75 3. Collector 3. Collector
lin =50 OHMS
PW= 500 n.
Collector Collector
connected to case connected to case
CASE 22 (1) CASE 31 (1)

(TO-1B) (TO-5)
2-328
*ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage" BVCEO Vde
(lC = 100 "Ade,IB = 0) 2N2927 25 -
(lC = 10 mAde, IB = 0) 2N2696 25 -
Collector-Base Breakdown Voltage BVCBO 25 - Vde
(lC = loo"Ade, IE = 0)
Collector Cutoff Current ICES - 25 nAde
(VCE = 15 Vde, VBE = 0) 2N2927
(Vca = 10 Vde, IE = 0) - 0.025 /'Adc
(VCB = 10 Vde, IE = 0, TA = 150o C) - 5.0 "Ade
(VCB'= 15 Vde, IE = 0, TA = 1250 C) 2N2927 - 5.0 "Adc
(VEB = 4_0 Vdc, IC = 0)
Base Current IB - 25 nAdc
(VCE = 15 VdF. VSE = 0) 2N2927
ON CH..,.R,ACTERISTICS
,.
DC Curient Gain hFE -
(lC ='50 mAde, VCE = 1.0 Vdc) 30 130
(lC = 50 mAde, VCE = 1.0 Vdc, TA = -550 C) 12 -
(lC = 300 mAde, VCE = 2.0 Vde)(I) 20 -
Collector-Emitter Saturation Voltage VCE(sa!) Vdc
(lC = 50 mAdc,lB = 2.5 mAde) - 0.25
(lC = 300 mAde,lB = 30 mAde) - 1.0
(lC = 50 mAde, I B = 2.5 mAde) - 1.1
(lC = 300 mAde, IB = 30 mAde) - 2.0
Base-Emitter On Voltage VBE(on) - 1.0 Vdc
(lC = 50 mAde, VCE = 1.0 Vde) 2N2927
(VCB = 10 Vde, IE = 0, f = 140 kHz)
Input Impedance hie - 1500 ohms
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
Voltage Feedback Ratio hre - 26 X 10-4
(lC = 10 mAde, VCE = 10 Vdc, f = 1.0 kHz)
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz) 25 180
(lC = 50 mAde, VCE = 3.0 Vde, f = 100 MHz) 1.0 -
Output Admittance hoe - 1200 "mhos
(VCC = 10 Vdc,l C ",,300 mAde, IB1""3O mAde)
Turn-On Time
(See Figure 1)
ton - 75 ns
(VCC = 10 Vde,lc""3OOmAdc, IB1 = IB2",,30mAdc)

Turn-Off Time
(See Figure 1)
toff - 170 ns
-Indicates JEDEC Aegistered Data .

• ·Motorola Guarantees this data in addition to JEDEC Registered Data.
(1 )Pulse Test: Pulse Width = 300 /.ls, Duty Cycle = 1.0%.
2-329
2N2710 (SILICON)
NPN silicon transistor primarily designed

for high-speed, low-power saturated switching appli-
cations for industrial service.
CASE 22
(TO·18)
MAXIMUM RATINGS

Collector Current -Continuous IC 500 mAdc
Total Device Dissipation @ TA = 25° C PD 0.36 W

Total Device DisSipation @ T C = 25° C PD 1.2 W
Operating Junction Temperature Range TJ +200 °c

stg

JOV
980
+6.0VlJ 500
OSCILLOSCOPE
INPUT~
~
10Mn
1.5pF
tr = t, ~ 0.4ns
-4.0 V
I" I, ~ 0.5 ns
Zi' ~ 50 ohms
2-330
2N2710 (continued)
ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage BV CEO Vde
(IC = 10 mAde, IB = 0) 20 -
Collector-Emitter Breakdown Voltage BV CES Vde
(IC = 10 /lAde, VBE = 0) 30 -
(IC = 10 /lAde, IE = 0) 40 -
(IE = 10 /lAde, IC = 0) 5.0 -
Collector-Cutoff Current ICBO ,.Adc
(V CB = 20 Vde, IE = 0) - 0.0.3
(V CB = 20 VDC, IE = 0, TA = +150'C) - 30

~BO /lAde
(V BE = 3.0 Vde, IC = 0) - 1.0
ON CHARACTERISTICS
DC Corrent Gain hFE -
(IC = 10 mAde, VCE = 1. 0 Vde) 40 -
(IC = 50 mAde, VCE = 1. 0 Vde) 40 -
(IC = 10 mAde, IB = 1. 0 mAde) - 0.25
(IC = 50 mAde, IB = 5.0 mAde) - 0.4

(IC = 10 mAde, IB = 1. 0 mAde) - 0.9
(IC = 50 mAde, IB = 5.0 mAde) - 1.3
(V CB = 10 Vde, ~ = 0, f = 4.0 MHz) - 4.0

on
(V CC = 3.0 Vde, VBE (off) = 2.0 Vde , IC = 10 mAde, IBI " 3.0 mAde) - 20

(VCC = 3.0 Vde, IC = 10 mAde, IBI = 3.0 mAde, IB2 = 1. 0 mAde) - 35
Charge-Storage Time (Figure 1) t ns

s
(V CC = 10 Vde, IC = IBI = IB2 = 10 mAde) - 15
FIGURE 2 - TURN ON AND TURN OFF TIME TEST CIRCUIT

3.0V
-2.0 V
+n7 0V
.
2.0 k
270
OSCILLOSCOPE
INPUT~
t,~ t,~
IOMn
2.6 pF
0.4"s
tr• t, ~ 0.5 ns
Z;,~ 50 ohms
2-331
2N2720 (SILICON)
2N2721
Dual NPN silicon transistors for small-signal, low-

power differential amplifier applications.
~@~
Case 654-04
TO-78

MAXIM UM RATI NGS (each side) (TA = 25°C unless otherwise noted)

Collector-Base" Voltage VCB 80 Vdc

stg
Temperature Range
One Both
Side Sides
Total Device Dissipation @TA = 25° C PD 0.3 0.6 Watt
Derate above 25° C 1. 71 3.4 mW/oC
Total Device Dissipation @ T C = 25° C PD 0.6 1.2 Watts
Derate above 25° C 3.4 6.8 mW/oC
2-332
ELECTRICAL CHARACTERISTICS (each side) (T, = 25'C unless otherwise noted)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage' (1) BV CEO Vdc
(IC = 10 mAde, IB = 0) 60 -
Collector Cutoff Current ICEO nAdc
(V CE =5.0Vdc, IB =0) - 10
Collector Cutoff Current I CBO Il Ade

(V= 60 Vde, I = 0) - 0.01
(V~: = 60 Vde, I~ = 0, T A = 150°C) - 10
nAde
~BO
(V EB = 5.0 Vde, IC = 0) - 10
ON CHARACTERISTICS
(IC = 100 IlAdc, VCE = 5.0 Vde) 30 120
(IC = 1. 0 mAde, VCE = 5.0 Vdc) 35 -
(IC = 10 mAdc, VCE = 5.0 Vdc) 42 -
V CE(sat)
(IC = 10 mAde, IB = 1. 0 mAde) - 1.0

(IC = 10 mAde, IB = 1. 0 mAde) 0.65 0.85
(IC = 10 mAde, VCE = 10 Vdc, f = 20 MHz) 80 -
(V CB = 5.0 Vde, ~ = 0, f = 1. 0 MHz) - 6.0

(IE = 1. 0 mAde, VCB = 5.0 Vde, f = 1. 0 kHz) 25 32

(IE = 1. 0 mAde, VCB = 5.0 Vdc, f = 1. 0 kHz) - 500
Small-Signal Current Gain hfe

30 200
-
(IC = 1. 0 mAde, VCE = 5.0 Vdc, f = 1. 0 kHz)
Output Admittance hob 11 mhos

(IE = 1. 0 mAde, VCB = 5.0 Vde, f = 1. 0 kHz) - 1.0
DC Current Gain Ratio** hFE/hFE2** -
(IC = 100 IlAde, VCE = 5.0 Vde) 2N2720 0.9 1.0
2N2721 0.8 1.0
Base Voltage Differential
(IC = 100 IlAdc, VCE = 5.0 Vdc) 2N2720
Iv BE1- V BE21
- 5.0
mVde
2N2721 - 10
Base Voltage Differential Gradient l>(V BE1- V BE2) mV
(IC = 100 IlAde, VCE = 5. 0 Vde, T A = -55 to +25' C) 2N2720 - 0.8
2N2721 - 1.6
(IC = 100 IlAde, V CE = 5.0 Vde, TA = +25 to +125'C) 2N2720 - 1.0
2N2721 - 2.0
111 Pulse Test: Pulse Width = 300 I'S, Duty Cycle = 2%

** The lower of the two hFE readings is taken as hFEl for the purpose of measurement.
2-333
2N2722 (SILICON)
Dual NPN silicon transistor for small-signal, low-

power differential amplifier applications.
Case 654·04
~PN
TO·78
NPN'<;[J
Pin Connections Bottom View
MAXIMUM RATINGS (each side) (TA = 25°C unless otherwise noted)
Operating & Storage Junction TJ , T -65 to +200 °c

stg
Temperature Range
One Both
Side Sides
Total Device Dissipation @T A = 25°C PD 0.3 0.6 Watt
Total Device Dissipation @T C = 25° C PD 0.6 1.2 Watts
2-334
2N2722 (continued)
ELECTRICAL CHARACTERISTICS (each side) (TA = 25'0 unl.ss oth• .wi,. noted)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage III BV CEO Vde
(IC = 10 mAde, IB = 0) 45 -
(IC = 10 /LAde, IE = 0) 45 -
Collector Cutoff Current ICEO nAde
(V CE =5.0Vde, IB =0) - 2.0

(V CB = 30 Vde, ~ = 0) • - 0.001
(V CB = 30 Vde, IE= 0, T A = 150 C) - 1.0
(~EBI = 5.0 Vde, IC = 0) - 1.0
ON CHARACTERISTICS
(IC = 1. 0 /LAde, VCE = 5.0 Vde) 50 250
(IC = 10 /LAde, VCE = 5.0 Vde) 100 -
(IC = O. 1 mAde, VCE = 5.0 Vde) 125 -
(IC = 10 mAde, IB = 0.5 mAde) - 1.0

(Ic = 10 mAde, IB = O. 5 mAde) 0.65 0.85

(IC = 10 mAde, VCE = 10 Vde, I = 20 MHz) 100 -
(V CB = 5.0 Vde, IE = 0, I = 1. 0 MHz) - 6.0

(~ = 1.0 mAde, VCB = 5.0 Vde, I = 1. 0 kHz) 25 32

(IE = 1. 0 mAde, VCB = 5.0 Vde, I = 1. 0 kHz) - 600

(~ = O. 1 mAde, VCE = 5.0 Vde, f = 1. 0 kHz) 100 700
Output Admittance hob /Lmhos

(~ = 1. 0 mAde, VCB = 5.0 Vde, f = 1. 0 kHz) - 1.0
Noise Figure NF dB
(IC = 10 /LAde, VCE = 5.0 Vdc, RG = 10 k ohms,
f = 10 Hz to 15.7 kHz) - 4.0
DC Current Gain Ratio** hFEl/hFE2** -
(IC = 1. 0 /LAde, VCE = 5.0 Vde) 0.9 1.0
Base Voltage Differential IVBEI - VBE2 1 mVde

(IC = 10 /LAde, VCE = 5.0 Vde) - 5.0
Base Voltage Differential Gradient o(VBEI-VBEa) mVde

(IC = 10 /LAde, VCE = 5.0 Vde, T A = -55 to +25' C) - 0.8
(IC = 10 /LAde, VCE = 5.0 Vde, T A = +25 to +125' C) - 1.0
111 Pulse Test: PUlse Width = 300 I-'S, Duty Cycle" 2.0% .
•* The lower of the two hFE readings is taken as hFEI for the purpose of measurement.
2-335
CASE 20(8)
(TO-72) Two NPN silicon annular transistors connected as a
darlington amplifier, and designed for applications re-
quiring very high gain.
EZ c
MAXIMUM RATINGS (TA =25°C unless otherwise noted)

2N2723 2N2725
Collector Emitter Voltage VCE20 60 45 Vdc
Collector-Base Voltage VCB1 80 45 Vdc
Emitter-Base Voltage VE2B1 12 10 Vdc
Collector Current IC 40 30 mAdc
Total Device Dissipation@TA = 25°C PD 0.5 Watt

Total Device Dissipation @T C = ·25° C PD 1.8 Watts
TC = 100°C 1.0 Watt
stg
Temperature Range
2-336
ELECTRICAL CHARACTERISTICS ITA =2S·C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage 111 BV CE20 Vde
(IC = 10 mAde, IBI = 0) 2N2723, 2N2724 60 -
2N2725 45 -
Collector-Base Breakdown Voltage BVCBlO Vde
(IC = 10 IlAde, IE2 = 0) 2N2723, 2N2724 80 -
2N2725 45
Emitter-Base Breakdown Voltage BV E2BlO Vde
(IE2 = 10 IlAde, IC = 0) 2N2723, 2N2724 12 -
2N2725 10 -
Collector Cutoff Current I CBlO IlAde
(V CB1 = 60 Vde, IE = 0) 2N2723, 2N2724 - 0.01
(V CB1 = 60 Vde, IE = 0, TA = 150'C) 2N2723, 2N2724 - 10
(V CB1 = 30 Vde, IE = 0) 2N2725 - 0.002
(V CB1 =30Vde, IE =0, TA = 150'C) 2N2725 - 2.0
Emitter Cutoff Current IE2BlO nAde

(V BlE2 = 10 Vde, IC = 0) 2N2723, 2N2724 - 10
(V BlE2 = 6.0 Vde, IC = 0) 2N2725 - 1.0
ON CHARACTERISTICS
(IC = 10 mAde, VCE2 = 5.0 Vde, IB2 = 0) 2N2723 2000 10,000
2N2724 7000 50,000
(IC = 100 IlAde, VCE2 = 5.0 Vde, IB2 = 0) 2N2725 2000 10,000

VCE2(sat)
(lC = 10 mAde, IB1 = 1. 0 mAde) - 1.0
Base-Emitter Saturation Voltage VBE2(sat) Vde

(IC = 10 mAde, IB1 = 1. 0 mAde) - 1.7
Current-Gain- Bandwidth Product (Each Unit) IT MHz
(IC = 10 mAde, VCEI or V CE2 = 10 Vde, 1= 20 MHz) 100 -
Output Capacitance Cob1 pF
(V CBl = 10 Vde, IE2 = 0, I = 140 kHz) 2N2723, 2N2724 - 10
S mall-Signal Current Gain

hIe -
(IC = 10 mAde, VCE2 = 5.0 Vde, 1= 1. 0 kHz) 2N2723 1500 15,000
2N2724 5000 60,000
(IC = 10 !lAde, V CE2 = 5.0 Vde, 1= 1. 0 kHz) 2N2725 1500 15,000
Noise Figure (Input Stage Only) NF dB

(IC = 50 !lAde, VCE = 5.0 Vde, RS = 3.0 k ohms,
1= 1. 0 kHz, BW = 100 kHz) 2N2723 - 10
(IC = 10 !lAde, VCE = 5.0 Vde; Ri; = 10 k ohms,
I = 1. 0 kHz, BW = 100 kHz) 2N2724 . 6.0
(IC = 3.0 !lAde, VCE = 5.0 Vde, RS = 30 k ohms,
1= 1. 0 kHz, BW = 100 kHz) 2N2725 - 6.0
111 Pulse Test: Pulse Width~12 ms, Duty Cyele~2.0 %.
2-337
2N2728 (GERMANIUM)
PNP germanium high-current power transistors es-

pecially designed for switching and power converter
circuit operating from low-voltage power sources such
as solar cells, thermo-electric generators, sea cells,
CASE 7
fuel cells, and 1. 5-volt batteries.
MAXIMUM RATINGS
Emitter- Base Voltage vEB 15 Vdc
Collector Current (continuous) IC 50 Adc
Base Current (continuous) IB 10 Adc
Total Device Dissipation @ 25°C

Case Temperature PD 170 Watts
Operating Temperature TJ +110 °c
Thermal Resistance
(Junction to Case) IlJC 0.5 °C/W
2-338
2N2728 (continued)
VCE =15V, VBE = 1 V - - 10
VCE =10V, VBE = 1 V, TC = l00·C - - 35

VEB = 15 V - - 10

VCB =15V, IE = 0 - - O. 5
Collector-Emitter Breakdown Voltage· BVCEO V

IC = 500 rnA, IB = 0 5.0 10 -
DC Current Transfer Ratio hFE -
IC = 20 A, VCE = 2 V 40 - 130

VCE(sat)
IC = 50 A, IB = 5 A - 0.075 0.1

VBE(sat)
IC =50A, IB = 5 A - 0.85 1.0
Common Emitter Cutoff Frequency kHz

fae
IC = 20 A, VCE = 2 V 3.0 4.5 -
Rise Time t IJ,S
r
IC = 20 A, VCC = 1. 75 V, IB(on) = 2 A - 18 25
Storage Time ts IJ,S

VBE =6V, Roo = 100 - 15 20
Fall Time tf IJ,S

VBE = 6 V, Roo = 100 - 10 15
• To avoid excessive heating of the COllector junction, perform these tests with an oscilloscope.
MERCURY SWITCH
0·500
.08750
9.90 1.75V
+ SWITCHING TIME TEST CIRCUIT
+
-----tll...----'----~
6V
2-339
2N2785 (SILICON)
CASE 20(8)
(TO·72)
Two NPN silicon annular transistors connected as a
darlington amplifier, and designed for applications re-
quiring very high gain.

Collector-Emitter Voltage VCE20 40 Vdc
Collector-Base Voltage VCB1 60 Vdc
Emitter-Base Voltage VE2B1 15 Vdc

(Pin 4 to Pin 2) 7.5 Vdc
Total Device Dissipation @TA = 25° C PD 0.5 Watt
Total Device Dissipation @T C = 25° C PD 1.8 Watts
TC = 100°C 1.0 Watt

stg
2-340
2N2785 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1) BV CE20 Vde
(IC = 20 mAde, IBI = 0) 40 -
Collector-Base Breakdown Voltage BV CBlO Vde
(IC = 100 /lAde, IE2 = 0) 60 -
Emitter-Base Breakdown Voltage BVE2BI0 Vde
(IE2 = 100 /lAde, IC = 0) 15 -
Collector Cutoff Current I CEO nAde
(V CE =20Vde, IB =0) - 500
Collector Cutoff Current I CBlO /lAde

(V CB1 = 30 Vde, IE = 0) - 0,05
(V CB1 = 30 Vde, IE = 0, T A = 150' C) - 10
Emitter Cutoff Current nAde

IE2B10
(V E2B1 = 5,0 Vde, IC = 0) - 20
ON CHARACTERISTICS
DC Current Gain« 1) hFE -
(IC = 1. 0 mAde, V CE2 = 4,0 Vde) 600 -
(IC = 10 mAde, VCE2 = 5,0 Vde) 1200 -
(IC = 100 mAde, V CE2 = 5,0 Vde) 2000 20,000

VCE2(sat)
(IC = 15 mAde, IBI = 3, 0 mAde) - 1.0

Current-Gain-Bandwidih Product IT MHz
(IC = 1. 0 mAde, VCE2 = 5,0 Vde, I = 10 MHz) 10 -
Output Capacitance Cob1 pF
(V CBl = 10 Vde, IE2 = 0, I = 1. 0 MHz) - 30
Input Impedance Ohm

\b
(IC = 1. 0 mAde, VCB1 = 5,0 Vde, 1= 1. 0 kHz) 30 80
Voltage Feedback Ratio h rb x 10- 4

(IC = 1. 0 mAde, V CE2 = 5,0 Vde, 1= 1.0 kHz) - 10

(IC = 1. 0 mAde, VCE2 = 5,0 Vde, I = 1. 0 kHz) 600 -
Output Admittance hob flmhos

(IC = 1. 0 mAde, VCB1 = 5,0 Vde, 1= 1.0 kHz) - 0,5
II) Pulse Test: Pulse Width ~ 300 /lS, Duty Cycle ~ 2,0%,
2-341
2N2800 (SILICON)
2N2801
2N2837
2N2838
PNP silicon annular transistors for medium-speed

switching applications_
CASE 22
(TO-18)
" 2N2837
2N2838
2N2800
2N2801
MAXIMUM RATINGS

Emitter-Base Voltage VEB s.o Vdc

@ 25'C Ambient Temperature
2N2600, 2N2601 - TO-5 0.6 Watt
Derating Factor Above 25'C 4.57 mW/'C
2N2637, 2N2636 - TO-16 O. 5 Watt

@ 25'C Case Temperature
2N2600, 2N2601 - TO-5 3.0 Watts
2N2637, 2N2636 - TO-16 1.6 Watts
Junction Temperature, Operating TJ +200 'c
Storage Temperature Tstg -65 to + 200 'c
DELAY AND RISE TIME TEST CIRCUIT STORAGE AND FALL TIME TEST CIRCUIT
INPUT +189V +10V

Zo ::::: 50!:!
PRf= 150 PPS
INPUT
+nr-
64 RISE TIME,,;; 2 ns lK 64
10 = SOn
PRf = 150 PPS
RISE TIME,,;; 2 ns 500 500
TO OSC I LLOSCOPE TO OSCillOSCOPE
-+~ s C>-<~5-0 -+-r RISE TIME,,;; 5 ns
-:U-
RISE TIME ""'5ns
50
l,.= 10 M!J -¥,fI,,-........
Z," =10 MQ
__ f- 12~
2-342
2N2800, 2N2801, 2N2837, 2N2838 (Continued)

Colleetor- Base Breakdown Voltage BVCBO Vde
(Ic = 10 ~Ade, IE = 0) 50 -
(IE = 100 ~Ade, IC = 0) 5.0 -
(IC = 100 mAde, IB = 0) 35 -
(VCE = 25 Vde, VBE = 0.5 Vde) - 100
Base Cutoff Current IBL nAde

(VCE = 25 Vde, VBE • 0.5 Vdel - 100

(IC = 0.1 mAde, VCE = 10 Vdel
2N2800, 2N2837 20 -
2N2801 , 2N2838 30 -
(IC = 150 mAde, VCE = 10 Vde)"!
2N2800. 2N2837 30 90
2N2801. 2N2838 75 225
(IC = 150 mAde. VCE = 1 Vdel"!
2N2800. 2N2837 15 -
2N2801. 2N2838 30 -
(IC = 500 mAde. VCE = 10 Vdel 'II
2N2800. 2N2837 25 -
2N2801. 2N2838 40 -
Collector Saturation Voltage Vde
(IC = 150 mAde. IB = 15 mAde)
VCE(sat)
- 0.4
(IC = 500 mAde, IB = 50 mAde) - 1.2

(IC = 150 mAde. IB = 15 mAde) - 1.3
(IC = 500 mAde, IB = 50 mAde) - 1.8

(V CB = 10 Vde. f = 100 kHz! - 25

(IC = 50 mAde, VCE = 10 Vde. f = 100 MHz) 120 -
SWITCH I NG CHARACTERISTICS (T A = 25 0 C unless otherwise noted)
CharlCterlstic 5,..,bol T,,1cI1 Mllimam Unit

Delay Time td 9 25 ns
Rise Time r 25 45 ns
Storage Time ts 100 225 ns
Fall Time ;su 4~ ns
f
111 Pulse Test. Pulse Width ~ 300 ~s. duty cycle ~ 2%
2-343
2N2832 (GERMANIUM) PNP germanium transistors for switching and
2N2833
2N2834 CASE 11A CASE 4-04
(TO-3 modified) (TO-41)

device MP2832 etc. (TO-41 package)
MAXIMUM RATINGS
Collector Current - ContiilUOus IC 20 Adc
Operating and Storage Junction TJ , Tstg -65 to +110

Temperature Range
FIGURE 1 - POWER DERATING CURVE
......
"""" ..........
~
I"-.....
THESE TRANSISTORS ARE ALSO SUBJECT TO SAFE AREA CURVES AS
INDICATED BY FIGURES 2. 3. 4. BOTII LIMITS ARE APPLICABLE
AND MUST BE OBSERVED
.............
r--.....
25 50 75 100 110 125
FIGURE 2 - 2N2832 FIGURE 3 - 2N2833 FIGURE 4 - 2N2834
20
10
1\ 'Th ..,50"s I "" \c ~.so"s
\ ..... :\ .,1-- 50 ,",
SOo"s
~
::E
S
1.0
H ~5ms
\\
j
~OC
,,\ L,\ -~
\
5ms
\. .... ~
SOo"s - ,
1\
~
jms ~"
'lit\
500"s --
...z
0-
'":::><>'"
, DC
,"
I'\. ..... OC
'"~
~<> 0.1
,I"'
" .. I'. " ~
I\,'
~ .........
~
'1~
.2
.01
,'\.
,
~
~
\ ,
~
a 20 40 60 80 100 0 20 40 60 80 100 120 140 a 20 40 60 80 100 120 140 160

V"" COLLECTOR.£MITTERVOLTAGE (VOLTS)
The Safe Operatinl Area Curves illclicate the Ie Vcs limits below which the devices Win not 10 Into secondary breakdown. As secondary breakdown is independent
a
of temperature and duty cycle, these curves can be used as lonl a"the averaie power derating curve (Filure 1) is,al,so taken into consideration to insure operation
below the maximum junction temperature. '
2-344
Characteristic Symbol I Min I Typ I Max IUnit I

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage Ul BVCEO(sus) Volts
(Ic = 100 mAdc, IB = 0) 2N2832 50 - -
2N2833 75 - -
2N2834 100 - -
(IE = 50 mAdc, IC = 0) 2.0 - -
Floating Potential* VEBF * Volts
(V CB = 80 Vdc, IE = 0) 2N2832 - - 0.5
(V CB = 120 Vdc, IE = 0) 2N2833 - - 0.5
(V CB = 140 Vdc, IE = 0) 2N2834 - - 0.5
Collector Cutoff Current*

ICES* mAdc
(V CE = 100 Vdc, VBE = 0) 2N2832 - - 20
(V CE = 140 Vdc, VBE = 0) 2N2833 - - 20
(V CE = 160 Vdc, VBE = 0) 2N2834 - - 20
Collector Cutoff Current** I CEX** mAdc

(V CE = 50 Vdc, VBE(off) =0. 2 Vdc, TC =+85°C) 2N2832 - - 40
(V CE = 75 Vdc, VBE (off) =0. 2 Vdc, TC =+85° C) 2N2833 - - 40
(V CE = 100 Vdc, VBE (off) = o. 2 Vdc, TC = +85°C) 2N2834 - - 40
Collector Cutoff Current*

ICBO * mAdc
(V CB = 2.0 Vdc, ~ = 0) - - 0.3
(V CB = 80 Vdc, ~ = 0) 2N2832 - - 10
(V CB = 120 Vdc, IE = 0) 2N2833 - - 10
(V CB = 140 Vdc, ~ = 0) 2N2834 - - 10
ON CHARACTERISTICS
(IC = 1. 0 Adc, V CE = 2.0 Vdc) 50 75 -
(IC = 10 Adc, VCE = 2.0 Vdc) 25 - 100

V CE(sat)
(IC = 1. 0 Adc, IB = 100 mAdc) - - 0.15
(IC = 10 Adc, IB = 1. 0 Adc) - - 0.30
(IC = 20 Adc, IB = 2.0 Adc) - - 0.5

VBE(sat)
(IC = 1. 0 Adc, IB = 100 mAdc) - - 0.6
(IC = 10 Adc, IB = 1. 0 Adc) - - 0.75
(IC = 20 Adc, IB = 2.0 Adc) - - 1.0
Small Signal Current Gain h fe -
(IC = 1. 0 Adc, VCE = 10 Vdc, f = 5.0 MHz) 2.0 3.5 -
Rise Time t
r
- 2.0 4.0 jJ.s
Storage Time t - 3.0 5.0 jJ.s

s
Fall Time tf - 1.0 2. 5 jJ.s
*SWEEP TEST: 1/2 Sine Wave, 60 Hz min.

(1IPULSE TEST: Pulse Width = 1. 0 ms, 2.0% Duty Cycle.
2-345
FIG 5 - BASE·EMmER SATURATION VOLTAGE VARIATIONS
0.8
i
~ 0.7
Te=-!'·C
./ ~~
V
~ ~
g le= 20A
~r-
~
I
~
Ie = lOA
--" -c;
0.6
lell, = 20
~~- .. 1--- ~
f--
~ 0.5
;
ID 0.4 f--Ie = lA -
Ie 3A
-- " lei I, = 10
1
,]
0.3
.01 0.1 1.0 5.0
I,. BASE CURRENT (AMP)
i I
Cv
0.8
Te=2SoC ~
...
~ 0.7
z:
~ 0.6
~
lell, = 20-1\
':'=P'~
I....
II
~/
~/
-
~
~ 0.5
~
~ 0.4
Ic =3A
1.. 1- .. ~. --_-..
_~~
Ie = lOA
.... -- ,..- ~ ~~
.... 1"1
r- lell, = 10
J 0.3
Ie 1A I
.01 0.1 1.0 5.0
0.9
~
~ 0.8
Te =10"C
I I I I
Ie = 20A -
n l......:": I-'
~
g 0.7
lell, = 20
"\ / A. !7
}/~-;/
I
~
0.6
I'
I'
L~ lei I, = 10
~ 0.5
-...., ~' fo':f::;::t'
i 0.4
Ie = lOA
;""'"
~ ~ i'
,..
-~ ~
le=3A
j
.} 0.3 I I 1 r\ ~
0.25
I I
.01 0.1 1.0 5.0
2-346.
FIG 6 - COLLECTOR·EMITTER SATURATION VOLTAGE VARIATIONS
g 0.5
I~A \
I
g
w
Ie = IA le=3A te = 'Ie J 20A' \
~ 0.4
\
o
>
z
o
~ 0.3 1\ \
::>
~
\ \ f\ 1\ 1> ........
-
le/l, = 20 - I
'" ,/
~ 0.2
i\
~
e
~ 0.1
o
'- ............ "'
-= r--= --t.
.....
-- '" - - r> c.::: -

.... \-
... , - ...... "" ""

'" Te = -40'C
"- le/l, = 10
I
.01 0.1 1.0
I,. BASE CURRENT (AMP')
iii 0.5
:;
o
~
w
~ 0.4
le= IA
, I
Ie = 3A Ie = lOA ,,
le=20A:
'" I
i\
\ ~
~
I
z
o
~ 0.3
\ /
\
~
~
:i
~
e
0.2
\ "-
~ i'.....
\.
I' r--. .....
I'-r--
Ie/I, = 20 '1-" ............
~/
,I
,,'" r- I-
/ le/l,=IO ~,/
... '" ""

"-
~ 0.1
o
'" Te 25'C
I
-= f=. r---
-
.01 0.1 1.0
~ 0.7
g \ ~ 20~
! '\.. Ie = IA le= 3A
\
Ie = lOA !lle = ISA Ie
.~
0.6
1\
>
~
0.5 \\ ,,\
1\
~ 0.4 "-1"- 1\ r i'...
~
f5 0.3 f', \ \ I' I
!::
~
~ 0.2
.....
..............
'", le/l., = 20-
"""\
~~
/r---I'-
>-- r-
~ 0.1
......... ..... b-..:: ... 1--'11
Te -100'C - le /l , = 10
.001 .01 0.1 1.0

I,. BASE CURRENT (AMP I
2-347
FIGURE 7 - CURRENT VARIATIONS

REVERSE- ~FORWARD
20 1.2
Iitt 25°C"';
P'"~ V 1 7
7
/ I
~ r.;
I
_ 1.0 ~+IOOOC /
_40°C 100°C / J
l 1/
25°C j
I
~
1
<> 0.6
08
.
I I
I
/
1-4O"C_
.
I / 1/
..JI~ ~ I j
./~
"/ ~ 0.4 / /
8 I
;;V ' .. =2'
II
.2 0.2
0.1
~V.. ~2V
10
1 IZ7
o
/ /
//
5 10 15 20
.01 .02 .04 .06 0.1 0.2 0.4 0.6 1.0 2.0
I•• BASE CURRENT (AMP) I.. BASE CURRENT (rnA)
FIGURE 8 - COLLECTOR CURRENT·VOLTAGE VARIATION

REYERSE- -FORWARD
20 100
.---: ~
_60
80
= V.. IV...
I
f=+looOC
/ I
! 40
I
I
I I
/
/
/ I I
::::> +100 oC / I /
+25OC/ /_400C Va =2V <> 20
I
I I
I
_
.2 8
10
.-/ +25°C
/
V 1400C
0.2 6
0.1 I I 4
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.2 0.1 o 0.1 0.2 0.3
VII. BASE.£MITTER VOLTAGE (VOLTS) V•• BASE.£MITTER VOLTAGE (VOLTS)
FIG 9 - BASE CURRENT·VOLTAGE VARIATIONS FIGURE 10 CURRENT·GAIN VARIATIONS

1000
600 100
SEE FIG. 7_ - . l :111
400 :::: V.. 2' I -' ~ ' .. =2V
\\
-25~
200 / /
100°C / / 250C / -4DoC 80
llOO -"""'"
:s
!
60
40
~
-40·C I\.
<> 20
~ 10 /
I
/ /
I
~
I,..- 100·C
1\"
'\.'1
~ 6
4
2
I
20
10
."
.........
I I I
o 0.2 0.4 0.6 0.8 0.1 1~ 10
VII. BASE EMITTER VOLTAGE (VOLTS) Ie. COLLECTOR CURRENT (AMP)
2-348
FIG 11 - RISE and FALL TIME vs COLLECTOR CURRENT FIG 12 - STORAGE TIME YS COLLECTOR CURRENT
I III
I.. = lu = D.lle
klIS~ ~IIME/
V
J
...~
4
r---- - -~ -- I" = I ..
....
= 0.1 Ie
::E
...;::
co
ali
'\
"', ....
0
~/ '".:
~
VI'
-"":::: r.:.. V"
/ - r---- mi lME
0.1 0.2 0.4 0.6 4 10 20 O.l 0.2 0.4 0.6 4 6 8 10 20
Ie. COlLECTOR CURRENT (AMP) Ie. COLLECTOR CURRENT (AMP)
FIG 13 - SWITCHING TIME TEST CIRCUIT
MERCURY SWITCH R, Chrlctlrlltlc sr- Mil Unit
Rise Time t, 4 I's

Storage Time t, 6 I's
Fall Time t, 2.5 I's
0- 20V
R, AOJUST R" R.. Rio for I" = In = O.lle
0- 2V
PULSE CONDITIONS; Ie = 5 AMP. I" = 0.5 AMP
Switching times shown are for constant current drive conditions.

Faster times can be realized by the use of a lower source impedance
or a speed-up capacitor. See Chapter !!i of the Motorola Switching
Handbook for a morc detailed ex.planation.
FIG 14 - CURRENT GAIN - BANDWIDTH PRODUCT

vs COLLECTOR CURRENT FIG 15 - OUTPUT CAPACITANCE vs REVERSE VOLTAGE
2000
Va - B VOLTS
~
... 1500
~
,... ,.......
'""
u
z
.............. <
t=
/' u
< 1000 ........
~ i""-
'\. ...
u
800
'"
<
"I
'"
....
0 600
t'-....
\ ..........
\ ~
u ["'-.......
400
J ......
o 300
0.1 0.2 0.4 0.6 0.8 1 1.0 4 8 10 20 40
Ie. COLLECTOR CURRENT (Ade) Ve•• REVERSE VOLTAGE (Vde)
2N2837, 2N2838
2-349
2N2845 thru 2N2848 (SILlC()N)

CASE 22
(TO-18) speed, medium-power saturated switchingapplications.
2N2845
2N2847
CASE 31
(TO-S)
2N2846
2N2848
MAXIMUM RATINGS

Collector-Eniitter Voltage* VCEO* 30 30 20 20 Vdc
Eniitter-Base Voltage VEB 5.0 5.0 5.0 5.0 Vdc
Total Device Dissipation@ T A = 25°C Po 360 800 360 800 mW

Derate above 25°C 2.1 4.6 2.1 4.6 mW/oC
Total Device Dissipation@TC = 25°C Po 1.2 3.0 1.2 3.0 Watts

Derate above 25°C 6.9 17.2 6.9 17.2 mW/oC
Operating Junction Temperature Range TJ -65 to 200 °c
Storage Temperature Range Tstg -65 to+ 200 °c
*Applicable from 1 mA to 30 mA (Pulsed)
2-350
ELECTRICAL CHARACTERISTICS (T ... = 2S"C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1) BVCEO(sus) Vde
(IC " 30 mAde, 18 " 0) 2N2845, 2N2846 30 -
(Ic " 30 mAde, 18 " 0) 2N2B47,2N2848 20 -
Collector-Base Breakdown Voltage 8VC80 ~;dc
(IC "0,1 mAde, IE " 0) 60 -

Emitter-Base Breakdown Voltage 8VE80 Vde
(IE" 0.1 mAde, Ie" 0) 5.0 -
Collector-Cutoff Current icES J.iAdc
(V CE " 30 Vde, V8E " 0) - 0.2
Collector Cutoff CUJ:"rent IC80 JJAdc

(VC8 " 30 Vde, IE " 0, T A " 150°C) - 200
Base Leakage Current Il Ad c

(VCE " 30 Vde, V8E " 0)
18L
- 0.2
ON CHARACTERISTICS III
DC Current Gain
(IC " 150 mAde, VCE " 10 Vde) 2N2845, 2N2846
hFE
30 120
-
2N2847, 2N2848 40 140
(ic " 500 mAde, VCE " 10 Vde) 2N2845, 2N2846
2N2847, 2N2848
20
30
--
(IC" 500 mAde, V CE = 1 Vde) All Types 10 -
(ic " 150 mAde, 18 " 15 mAde) All Types - 0.4
(Ie " 500 mAde, 18 " 50 mAde) 2N2845, 2N2846 - 1.0
2N2847, 2N2848 - 0.75
Base-Emitter Saturation Voltage V8E(sat) Vde

(ic " 150 mAde, 18 " 15 mAde) - 1.2
(Ie " 500 mAde, 18 " 50 "'Ade) - 1.6
(IC " 50 mAde, VCE " 10 Vde, I " 100 MHz) 250 -
(VC8" 10 Vde, IE" 0, f " 140 kHz) - 8.0

(VCC " 10 Vde, IC - 150 mAde. 181 ~ 15 mAde) 2N2845, 2N2846 - 40
(VCC " 6 Vde. IC - 150 mAde. 181 ~ 15 mAde) 2N2847, 2N2848 - 25
Turn-Ofl Time (Figure 2) ton ns

(VCC" 10 Vde, ic ~ 150 mAde, 181 ~ 182 • 15 mAde)
(Vee::::: 6 Vdc, Ie ... 150 mAde, lSI'" 182 ... 15 mAde)
2N2845, 2N2B46
2N2847, 2N2848
-- 40
40
(II Pulse Test: Pulse Width" 300!'s; Duty Cycle"' 2%
FIGURE 1- TURN·ON TIME TEST CIRCUIT FIGURE 2- TURN·OFF TIME TEST CIRCUIT
Vee
200ns R,
:~ 1110 " '__~.., SCOPE .05"F Ikg

1;,= 100 kg
< t, 2ns tr < 2ns
O~
50g
200 ns
t, < 2ns
- 2N2847,2N2848 +16V
2N2845. 2N2846
Vee IOV 6V
R, 62g 39g
2-351
2N2857 (SILICON)
NPN SILICON
NPN SILICON RF SMALL-SIGNAL TRANSISTOR RF SMALL-SIGNAL
TRANSISTOR
.... designed primarily for use in high'gain, low·noise amplifier, oscil·

lator, and mixer applications. Can also be used in UHF converter
applications.
• High Current·Gain-Bandwidth Product -

fT = 1.6 GHz (Typ) @ IC = 8.0 mAde
• Low Noise Figure-
NF = 4.5 dB (Max) @ f = 450 MHz
I
• Low Collector·Base Time Constant -
rb'Cc = 15 ps (Max) @ IE = 2.0 mAde
• Characterized with Scattering Parameters
• Ideal for Micro-Power Applications·
0.209
0.230
DlA
r
~o
1_1'
*MAXIMUM RATINGS 0.500
MIN
Rating Svmbol Value ~:~~: OIA
~
Unit

Collector Current - Continuous IC 40 mAde
0.100
Total Device DllIsipation @TA =25°C Po 200 mW Pin I. Emitter
Derate above 25DC 1.14 mW/oC 2. Base
3. Collector
Storage Temperature Range Tstg -65 to +200 °c 4. Case
~
0.048
CASE 20110)
TO-72 PACKAGE
Active Elements Isolated from Case

"Indicates JEDEC Ragistarad Data.
2-35.2
2N2857 (continued)
*ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage** BVCEO 15 - - Vde
(lc = 3.0 mAde, IB = 0)
Collector-Base Breakdown Voltage BVCBO 30 - - Vde
(I C = 1.0 !lAde, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 2.5 - - Vde
(IE = 10 !lAde, IC = 0)
Collector Cutoff Current ICBO - - 0.01 !lAde
(VCB = 15 Vde, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAde, VCE = 1.0 Vde)
Current-Gain-Bandwidth Product CD fT 1000 - 1900 MHz
(lC = 5.0 mAde, VCE = 6.0 Vde, f = 100 MHz)
Collector-Base Capacitance Ceb - 0.7 1.0 pF
(VCB = 10 Vde, IE = 0, f = 0.1 to 1.0 MHz)
Small-Signal Current Gain hfe 50 - 220 -
(lC = 2.0 mAde, VeE = 6.0 Vde, f = 1.0 kHz)
Collector-Base Time Constant rb'C e 4.0 - 15 ps
(IE = 2.0 mAde, VCB = 6.0 Vde, f = 31.9 MHz)
Noise Figure (Figure 1) NF dB
(IE = 0.1 mAde, VCE = 1.0 Vde, RS = 50 ohms, f = 450 MHz) ~ - 5.8 -
(lC = 1.5 mAde, VCE = 6.0 Vde, RS = 50ohms, f = 450 MHz) - 3.7 4.5
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1) G pe dB
(IE = 0.1 mAde, VCE = 1.0 Vde, f = 450 MHz) ~ - 11 -
(lC = 1.5 mAde, VCE = 6.0 Vde, f= 450 MHz) 12.5 - 19

Power Output (Figure 2) Pout 30 - - mW
(IE = 12 mAde, VCB = 10 Vde, f = 500 MHz)

**Motorola quarantees this data in addition to JE DEC Registered Data.
<D fT is defined as the frequency at which Ihfel extrapolates to unity_
@) Micro-Power Specifications.
2-353
2N2857 (continued)
FIGURE 1 - TEST CIRCUIT FOR NOISE FIGURE 2 - TEST CIRCUIT FOR

FIGURE AND POWER GAIN OSCILLATOR POWER OUTPUT
CepacitalJC8wluesin pF
C4
0.3-5.0
VOUI
Rs=50n
HVEE
L1 - 3tums'16 AWG wire. 318" 0.0. 1-1/4" long.
VEE =-7.5Vdc
Capacitance valulISin pF
Ll, l2-Silver-platedbrassrod. 1-1f2"'ongand 1f4" die. Install (e) Apply VEE. and with signal generator adjusted for 5 mV
at least 1/2" from nearest vertical chassis surface. Dutput from amplifitr, tune Cl,C3,end C4 for
l3 - 1/2 turn #16 AWG wire, located 1/4" from and maximum output.
paraileltoL2. (OJ Interchange connections to signal generator and
;0 External intarleadshield to isolate cotl&ttor lead from
_
RFvoltmeter.
emitter and base leads. (E) With sufficiant signal appliad to output terminals of
Neutralization Procedure: amplifier, adjust C2for minimum indicationat input.
(AI Connect 450-MHz signal generator (with RS = 50 ohms) IF) Repeat steps IA), IBI,and ICI to detarmine if retuning
to input terminals of amplifier. is necessary.
(8) Connect 50-ohm RF voltm,teracrossoutputterminals
of amplifier.
FIGURE 3 - NOISE FIGURE versus FREQUENCY FIGURE 4 - NOISE FIGURE versus SOURCE
RESISTANCE AND COLLECTOR CURRENT
.--
---
10 600
I-- v'CE = ~.O Jde I 500 t- VCE = 6.0Vdc
9.0 F- t-.... r---;:; f = 105 MHz
IC = 1.0 mAde 400 .......
8.0 I- RS = Optimum (~250 Ohms@105and 200 MHZ),
in
:;; r f:: r- I-- I'""--. ~ ~t--.
:x: 300
7.0 I- ~ 100 Ohms@450 MHz ........ l"-
'"
OS
w
8
..,2!
w ~ ~2.9d8
200
'":::> 6.0 «
In
i'-- t-- 3.0 dB ~ '\
'"
u:
j.5~B
5.0
!Jl ~ 100 F-
(5 4.0 ..,w
2!
u: 3.0 - l - I- '"
:::>
90
80 f;;;: i-4.0dB
2! 70
~
2.0 .,; 60
'" 50
=R
5dB
1.0 I 40 1
o 30
50 60 70 100 200 300 400 500 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
f. FREQUENCY (MHz) IC. COLLECTOR CURRENT (mAde)
FIGURE 5 - NOISE FIGURE versus SOURCE

RESISTANCE AND COLLECTOR CURRENT
600 1-- VCE - 6.0 Vde
~
500 I-
r---.....
.......
r-... f =200MHz
in I- ~dB '---.. ...........

:;;
:x:
8
300
l - ~L~B
P ........ '" I.......
..,zw
«
In
200 i'-
)
'\
1\ "I"
i3
'"w 100 l- V' r--.
..,
'":::> 70 I--
4.0 dB
~ ~
it 50
40
30
0.5
I-
m 0.7 1.0
~
2.0 3.0
-- I--
J)
10
5.0 7.0
Ic. COLLECTOR CURRENT (mAde)
2-354
2N2857 (continued)
FIGURE 6 - CURRENT-GAIN- FIGURE 7 - NOISE FIGURE AND POWER GAIN

BANDWIDTH PRODUCT versus COLLECTOR CURRENT
~ 2. 0 0 25
S
G 1.8 r-V~E : 16.oUe
"
~ 1.6
8. Or---
RS ~ 50 Ohms
f" 450 MHz G~er-- 20
r-
'"
~ 1.4
.....- ~ ~ ~
w
~
V
/
1\ 6. 0
V-
""
~ 1. 2
;1i
~ 1.0 /
,/
V
\
\
'"u:w
~ 4. 0
./
" <:
NF
~I-"'"
I-'"
i
;;'
~
08
2. 0 5.0
c: 0.6
i3
.c: 0.4 0 o
1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.1 0.2 0.5 0.7 1.0 2.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAde) IC, COLLECTOR CURRENT (mAde)
FIGURE 8 - INPUT ADMITTANCE FIGURE 9 - OUTPUT ADMITTANCE

versus FREQUENCY versus FREQUENCY
20 10
1
18 f- VCE" 6.0 Vde 9.0
VCE" 6.0 ~de
IC "1.5 mAde t- IC "1.5 mAde
~ 16
'E 8.0
.....- ~ V
V[--
'E .5 .1
.5 14 w 7.0 +Jb
w
'-' /'
V V '-'
z
z 12 6.0
'">->-
+ibi'V--
/ / '"
>-
>- V
"
10 5.0
"'"'" V ./ V
8.0 '">-'" 4.0
V I-"'"
-----I--'
>- ~ 9i'V 1i'
1i' 6.0 >- 3.0
-
/V g VI-'
'>=";; 4.0
V ~
2.0
I-- 90' ~
2.0 1.0
o o
100 150 200 300 400 500 600 800 1000 100 150 200 300 400 500 600 800 1000
f, FREQUENCY (MHz) f, FREQUENCY MHz)
FIGURE 10 - FORWARD TRANSFER FIGURE 11 -REVERSE TRANSFER

ADMITTANCE versus FREQUENCY ADMITTANCE versus FREQUENCY
~ 50 ~ 5.0
'E 45
VCE" 6.0~de 'E
.5 4.5
f- VCE "6.0 Vde
.5 IC "1.5 mAde IC "1.5 mAde
w
'-' 40 ~ 4.0
z 9f,
'"
>-
>-
"'"
'"'"
35
30
'"""
"
V f-"
-- -
i
~ 3.5
>-
"'"
c 3.0
V
/
'"
jb re
w 25 2.5
~
'"z 20
/ ~ 2.0
./
;::: ibf,
>- 15
V ~ 1.5
k-'"
/
----
~ i'.. V
'" 10 ffi 1.0
~ i'.. ~
~ 5.0 c: 0.5
-9re
.£ o
100 150 200 300 400 500 600 800 1000 100 150 200 300 400 500 600 800 1000
f. FREQUENCY (MHz) f, FREQUENCY (MHz)
2-355
2N2857 (continued)
FIGURE 12 - S11. INPUT REFLECTION COEFFICIENT FIGURE 13 - S22. OUTPUT REFLECTION COEFFICIENT
FIGURE 14 - S12. REVERSE TRANSMISSION COEFFICIENT FIGURE 15 - S21. FORWARD TRANSMISSION COEFFICIENT
2-356
2N2857 (continued)
FIGURE 16 - S11.INPUT REFLECTION COEFFICIENT AND S22. OUTPUT REFLECTION COEFFICIENT
2-357
2N2894 (SILICON)
PNP silicon annular transistor designed for low-

CASE 22
(TO-18)
MAXIMUM RATINGS ITA = 25°C unless otherwise noted I

Collector-Emitter Voltage * VCEO• 12 Vdc
Collector Current-Continuous IC 200 mAdc

Total Device Dissipation @ TC = 25°C PD 1200 mW


Temperature Range T J , Tstg -65 to +200 °c
*Applieable from 0.01 to 10 mAde.
Vss -2V
620
1000
' - - - O Vout TO SAMPLING SCOPE
lin:::=" 100 kO
O.l,uF tr ~ 1 ns
2kO
Vin 0 - - -...-------,1 t - - -....- - " " ' ' ' v - - - t - - f
1000
2-358
2N2894 (continued)
ELECTRICAL CHARACTERISTICS (T A = 2SoC unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (11 BVCEO(sus) Vde
(IC = 10 mAde, Is
= 0) 12 -
(IC = 10 "Ade, VBE = 0) 12 -
(IC = 10 "Ade, IE = 0) 12 -
(IE = 100 "Ade, IC = 0) 4.0 -
Collector- Cutoff Current ICES nAde
(VCE = 6 Vde, VBE = 0) - 80
Collector-Cutoff Current ICBO MAde

(VCB = 6 Vde, IE = 0, TA = 125°C) - 10
Base Current IB nAde

(VeE = 6 Vde, VBE = 0) - 80
ON CHARACTERISTICS
DC Current Gain It)
(IC = 10 mAde, VCE = O. 3 Vde)
hFE
30 -
-
(IC = 30 mAde, VCE = 0.5 Vde) 40 150
(IC = 30 mAde, VCE = 0.5 Vde, T A = _55°C) 17 -
(Ie = 100 mAde, VCE = 1.0 Vde) 25 -
Collector-Emitter Saturation Voltage(1) VCE(sat) Vde
(IC = 10 mAde, Ia = I mAde) - 0.15
(IC = 30 mAde, IB = 3 mAde) - 0.2
(IC = 100 mAde, Is = 10 mAde) - 0.5
Base-Emitter Saturation Voltag (1) Vde

VBE(sat)
(IC = 10 mAde, Ia = I mAde) 0.78 0.98
(IC = 30 mAde, IB = 3 mAde) 0.85 1.2
(IC = 100 mAde, IB = 10 mAde) - 1.7
(Ie = 30 mAde, VCE = 10 Vdc, f '" 100 MHz) 400 -
(VCB = 5 Vde, IE = 0, 1= 140 kHz) - 6.0

(V BE = -0.5 Vde, IC = 0, 1= 140 kHz) - 6.0
Turn-On Time, Figure 1 ton ns

(Vce = 2 Vde, VBE(o!!) = 3 Vde,
IC = 30 mAde; IBI = 1. 5 mAde) - 60
Turn-Off Time, Figure 1 toff ns

(VCC = 2 Vde, IC = 30 mAde,
Ial = 1s2 = 1. 5 mAde) - 90
(11 Pulse Test: Pulse Width = 300 J.LS; Duty Cycle = 1%
2-359
2N2895 (SILICON)
2N2896
2N2897

cations.
CASE 22
(TO·IS)
MAXIMUM RATINGS
Emitter-Base Voltage VEB ... 7.0 ... Vdc
Collector Current IC ... 1.0 .... Adc
Total Device Dissipation @ T A = 25°C PD ... 0.5 ... Watt

Derate above 25°C ... 2.86 ... mW;oC
Total Device Dissipation @ TC = 25°C PD . 1.8 ... Watts

Derate above 25°C ... 10.3 ... mW;oC
Operating and Storage Junction T J , T stg - -65 to +200 - °c

Temperature Range
2-360
2N2895, 2N2896, 2N2897 (Continued)
ELECTRICAL CHARACTERISTICS (T. = 2S"C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage III BVCEO(sus) Vdc
(IC = 100 mAdc, IB = 0) 2N2895 65 -
2N2896 90 -
2N2897 45 -
Collector-Emitter Breakdown Voltage (11 BVCER Vdc
(IC = 100 mAdc, RBE = 10 ohms) 2N2895 80 -
2N2896 140 -
2N2897 60 -
(IC = 0.1 mAdc, IE = 0) 2N2895 120 -
2N2896 140 -
2N2897 60 -
(~= 0.1 mAdc, IC = 0) 7.0 -
Collector Cutoff Current ICBO /'Adc
(VCB = 60 Vdc, IE = 0) 2N2895 - 0.002
2N2896 - 0.01
2N2897 - 0.05
(VCB = 60 Vdc, IE = 0, T A = +150"C) 2N2895 - 2.0
2N2897 - 50
(VCB = 90 Vde, ~ = 0) 2N2896 - 0.01
(YCB = 90 Vdc, ~ = 0, TA = +150"C) 2N2896 - 10
Emitter Cutoff Current lEBO /'Ade

(V BE =5.0Vdc, IC =0) 2N2895 - 0.002
2N2896 - 0.01
2N2897 - 0.05
ON CHARACTERISTICS
(Ie= 10 /'Adc, VCE = 10 Vde) 2N2895 10 -
(IC = 100 /'Ade, VCE = 10 Vde) 2N2895 20 -
(IC = 1. 0 mAdc, VCE = 10 Vde) 2N2896, 2N2897 35 -
(IC = 10 mAdc, VCE = 10 Vdc) 2N2895 35 -
(IC = 10 mAde, VCE = 10 Vdc, TA = -55"C) 2N2895, 2N2896 20 -
(IC = 150 mAde, VCE = 10 Vde)'111 2N2895 40 120
2N2896 60 200
2N2897 50 200
(IC = 500 mAde, VCE = 10 Vdc) II) 2N2895 25 -
(IC = 150 mAde, ~ = 15 mAdc) 2N2895, 2N2896 - 0.6
2N2897 - 1.0
Base-Emitter Saturation Voltage III VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 2N2895, 2N2896 - 1.2
2N2897 - 1.3
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) 2N2895, 2N2896 120 -
2N2897 100 -
(VCB = 10 Vde, IE = 0, f = 100 kHz) - 15
(V BE = O. 5 Vdc, IC = 0, f = 100 kHz) - 80

(IC = 5.0 mAde, VCE = 5.0 Vde, f = 1. 0 kHz) 2N2895 50 200
2N2896, 2N2897 50 275
Noise Figure NF dB
(IC = 0.3 mAde, VCE = 10 Vde, RS = 500 ohms, 2N2895 - 8.0
f = 1. 0 kHz, BW = 15 kHz)
(11 Pulse Test: Pulse Width:; 300 1./8, Duty Cycle:; 1. 8%.
2-361
2N2903 (SILICON)
2N2903A
Dual NPN silicon transistors designed for differential

amplifie r applications.
Case 654-04
TO-78


Emitter-Base Voltage V EB 7.0 Vdc

Temperature Range
One Both
Side Sides
Power Dissipation@TA "25" C PD 200 300 mW
Derate above 25' C 1. 14 1. 71 mwj'e
Power Dissipation @TC " 25· C PD 600 1200 mW
T C " 100·C 350 700 mW
Derate above 25°C 3.43 6.86 mWj'C
ELECTRICAL CHARACTERISTICS (each side) (T, = 25 c ""'" ,'h"wi" ,otod)

OFF CHARACTERISTICS
Collector-Emitter Sust'-a.ining Voltage (1) BV CEO(sus) Vdc
(Ie" 10 mAdc. IB " 0) 30 -
(IC " 10 }lAdc. IE " 0) 60 -
(IE" O. I }lAdc. IC ~ 0) 7. a -
Collector Cutoff Current ICBO fiAdc
(V CB " 50 Vdc. IE ~ 0) - 0.01
(V CB ~ 50 Vdc. IE ~ O. TA ~ 150'C) , 15
Emitter Cutoff Current lEBO }lAdc

(V BE " 5. a Vdc, IC " 0) - O. 01
(11 Pulse Test: Pulse Width < 300 fiS, Duty Cycle < 2. 0"0.
2-362
ELECTRICAL CHARACTERISTICS (each side) (T, . 25 e ",.,. oth",,,,. "otod)

ON CHARACTERISTICS
(I C = 10 IlAde, V CE = 5.0 Vdc) 60 -
(IC = 10 /lAde, V CE = 5.0 Vdc, T A = -55' C) 25 -
(IC = 1. 0 mAde, VCE = 5.0 Vdc) 125 625
(IC = 1. 0 mAde. V CE = 5.0 Vdc, T A = _55' C) 60 -
Collector-Emitter Saturation Voltage V CE(sat) Vdc
(IC = 5.0 mAdc, IB = O. 5 mAdc) - 1.0

VBE(sat)
(IC = 5.0 mAde. IB = 0.5 mAde) - 0.9
SMALL -SIGNAL CHARACTERISTICS

(IC = 5.0 mAde, VCE = 10 Vde. f = ~O MHz) 60 -
(V CB = 10 Vdc, IE = 0, f = 140 kHz) - 8.0
Inp"lt Capacitance Cib pF

(V BE = O. 5 Vdc, IC = 0, f = 140 kHz) - 10
Input Impedance h. kohm

Ie
(IC = 1. 0 mAde, V CE = 5.0 Vdc, f = 1. 0 kHz) 1.0 -
Voltage Feedback Ratio h X 10- 4
re
(IC = 1. 0 mAdc, VCE = 5.0 Vde, f = 1. 0 kHz) - 6.0

(IC = 1. 0 mAde. V CE = 5.0 Vdc, f = 1. 0 kHz) 150 600

oe 30
(IC = 1. 0 mAde, V CE = 5.0 Vde, f = 1. 0 kHz) 5.0
Input Impedance ohms

hib
(IC = 1. 0 mAde, V CB = 5.0 Vde, f = 1. 0 kHz) 20 30

(I C = 1. 0 mAde. V CB = 5.0 Vde, f = 1. 0 kHz) - 5.0

(IC = 1. 0 mAde, VCB = 5.0 Vde, f = 1. 0 kHz) - 0.2
Noise Figure NF dB
(IC = 10 /lAdc, V CE = 5.0 Vdc, RS = 10 k ohms, f = 1. 0 kHz) - 7.0
DC Current Gain Ratio** hFE/hFE2* -
(IC = 1. 0 mAde. V CE = 5.0 Vdc) 2N2903 0.8 1.0
2N2903A 0.9 1.0
Base Voltage Differential IV BEI- V Bd mVde
(IC = 10 /lAde, V CE = 5.0 Vde) 2N2903 - 10
2N2903A - 5.0
Base Voltage Differential Gradient ,,(V BEI- V BE2) /lV/'C
(IC =10 IlAdc, VCE = 5.0 Vdc, T A = -55' C to +125'C)
2N2903 6.TA - 20
2N2903A - 10
** Lowest hFE reading is taken as hFEI for this ratio.
2-363
2N2904, A thru 2N2907, A(SILICON)
2N3485,A, 2N3486,A
PNP SILICON ANNULAR HERMETIC TRANSISTORS
· .. designed for high-speed switching circuits, DC to VHF amplifier

applications and complementary circuitry. PNPSILICON
SWITCHING AND AMPLIFIER
• High DC Current Gain Specified - 0.1 to 500 mAdc TRANSISTORS
tr = 200 MHz (Min) @ IC = 50 mAdc
!m
• 2N2904,A thru 2N2907,A Complement to NPN 2N2218,A,
2N2219,A, 2N2221,A, 2N2222,A
Ir:~--L
• JAN/JTX Available, Except 2N3485 and 2N3486.
llo.",
CASE 31 (1) T T
SELECTOR GUIDE 2N;~:'A L ~~
U.U16-1r
.Characteristic
2N2905.A
o:m &8ll)
~/AO.028
Pm 1. Emitll!r
2.BallG
A.~
3.Colleo;tor
BVCEO hFE
Device
Type
Ic=10mAde
Volts
Ic=I.0mAde
Min
Ic a l50mAdc
Min
IC =500 mAdc
Min Package
~
2N2904 40 25 40 20
li1
0.209
r
I
TO-5
2N2905 50 100 30
I
imb
1!1]!I OIA OIA \;--
2N2906 25 40 20 We'lhl ~ 1.15 gram
TO-18
2N2907 50 100 30 "" II 'I ~
I
2N3485
2N3486
2N2904A
2N2905A
60
25
50
40
100
40
100
40
20
30
40
TO-46
TO-5
I T
I
100 50 O.SOO
2N2906A 40 40 40 a,Olll MIN CASE 22 (1)
2N2907A
2N3485A
2N3486A
100
40
100
100
40
100
SO
40
50
TO-18
TO-46
0.019 iliA
p",1. Em",,,
2 Ba~
3 Collectlll
.l TO·18
2N2906,A
2N2907,A
O.050-i :_
~ OJI!"..
-MAXIMUM RATINGS 9~_~0178 OIA
OJ"
Rating Symbol Non-A Suffix I A-8uffix Unit OO"MAI L
Collector-Emitter Voltage VeEO 40 I 60 Vdc
"I, -~
Collector-Ba .. Voltage VeB 60 Vdc I 0085
Emitter-Base Voltage VEB 5.0 Vdc OSOO
I
MIN
Collector Current -.Continuous Ie 600
2N2904,A 2N2906,A 2N34B5,A

mAde
CASE 26 1 .Q.lli.OIA
0019
TO·46
2N2905,A 2N2B07,A 2N3486,A
2N3485.A
T ot81 Device Dissipation Po 600 400 400 mW 2N3486,A
@TA=250e
Derate above 2Soe 3.43 2.2B 2.28 mW/oe
Total Device Dissipation Po 3.0 1.8 2.0 Watts
@Te=2Soe
Derate above 250 e 17.2 10.3 11.43 mW/oe
Operating and Storage Junction TJ,Tstg -65 to +200 °c The respective JEOEC registered
Temperature Range dimensions and nOlesapply
2-364
2N2904,A thru 2N2907,A/2N3485,A, 2N3486,A (continued)
-ELECTRICAL CHARACTERISTICS (T A = 250 unless othOfWise noted)
Ch.I'lICteristic Symbol Min Typ MIIx Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) BVCEO Vde
(lC = 10 mAde, IB = 0) Non-A Suffix 40 - -
A-Suffix 60 - -
Collector-Base Breakdown Voltage BVCBO 60 - - Vde
(lC = 10 "Ade, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 5_0 - - Vde
(IE = 10 "Ade, IC = 0)
Collector Cutoff Current ICEX - - 50 nAde
(VCE = 30 Vde, VBE = 0_5 Vde)
(VCB = 50 Vdc, IE = 0) Non-A Suffix - - 0_020
A-Suffix - - 0_010
(VCB = 50 Vde, IE = 0, TA = 1500 C) Non-A Suffix - - 20
A-Suffix - - 10
ease Cutoff Current IB - - 50 nAde
(VCE = 30 Vde, VBE = 0_5 Vde)
ON CHARACTERISTICS
(lC = 0.1 mAde, VCE = 10 Vde) 2N2904,2N2906,2N3485 20 - -
2N2905,2N2907,2N3486 35 - -
2N2904A,2N2906A,2N3485A 40 - -
2N2905A,2N2907 A,2N3486A 75 - -
(lC = 1.0 mAde, VCE = 10 Vde) 2N2904,2N2906,2N3485 25 - -
2N2905,2N2907,2N3486 50 - -
2N2904A,2N2906A,2N3485A 40 - -
2N2905A,2N2907A,2N3486A 100 - -
(lC = 10 mAde, VCE = 10 Vde) 2N2904,2N 2906,2N3485 35 - -
2N2905,2N2907,2N3486 75 - -
2N2904A,2N2906A,2N3485A 40 - -
(lC = 150 mAde, VCE = 10 Vdc)!ll

2N2905A,2N2907 A,2N3486A
2N2904,A,2N2906,A,2N3485,A
100
40
-
-
-
120
2N2905,A,2N2907,A,2N3486,A 100 - 300
(lC = 500 mAde, VCE = 10 Vde)(l) 2N2904,2N2906,2N3485 20 - -
2N2905,2N2907,2N3486 30 - -
2N2904A,2N2906A,2N3485A 40 - -
2N2905A,2N2907A.2N3486A 50 - -
Collector-Emitter Saturation Voltage( 1) VCE(satl Vde
(lC = 150 mAde, IB = 15 mAde) - - 0_4
(lC = 500 mAde, IB = 50 mAde) - - 1_6
Base-Emitter Saturation Voltage VBE(satl Vde
(lc = 1"50 mAde, IB = 15 mAde)(l) - - 1_3
(lC = 500 mAde, IB = 50 mAde) - - 2_6
Current-Gain-Bandwidth Produet(2) fT 200 - - MHz
Output Capacitance Cob - - 8_0 pF
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Input Capacitance Cib - - 30 pF
(VSE = 2_0 Vde, IC = 0, f = 100 kHz)
Turn-On Time ton - 26 45 ns
(VCC = 30 Vde, IC = 150 mAde,
Delay Time IBl = 15 mAde) td - 6_0 10 ns
(Figure 15a)
RiseTime tr - 20 40 ns
Turn-Off Time toff - 70 100 ns

(VCC = 6_0 Vde, IC = 150 mAde,
Storage Time 181 = IB2 = 15 mAde) Is - 50 80 ns
(Figure 15b)
Fall Time tf - 20 30 ns
CUPulse Test: Pulse Width S 300 loll, Duty Cycle s: 2.0%.
(2)fT is defined as the frequ-;ncv at which Ihfel .,ctrapolates to unity.
2-365
FIGURE 1 - NORMALIZED DC CURRENT GAIN
2.0
- --.-
+IWC
r--
z i-- I -
-f-
-- - - '-
- - --- - - '"
;;: ~ ~ f--- -l"-
...z
to i'
+25°C
....... ....
-
w 1.0
'"~
-- --- -- "
.......
-- - -
'" I\,
'" 0.7 "
- - -- - - "
Q
~
ffi 1-- _
~ r---
--- .- - -- "
N
:::; 0.5
< 'Ii' , 55°C .......
'"
:IE
'"
Q .... ...
Z
~ 0.3
--VeE~IOV
---- VeE ~ 1.0V \. ....
0.2 \
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 so 70 100 200 300 500
FIGURE 2 - NORMALIZED COLLECTOR SATURATION REGION

1.0
~ This graph shows the effect of base current on col·
lector current. po (current gain at edge of saturation) is
in
!:l
~
0.8 \ TJ ~25°C
the current gain of the transistor at 1 volt. and p. (forced
~
\ gain) is the ratio of Ie/I" in a circuit.
~ EXAMPLE: For type 2N290S, estimate a base cur·
j;
0.6 ~ rent (I,,) to insure saturation at a temperature of 2S"C
and a collector current of 150 mAo
~ ......
I; 0.4
\
,\. '-...::I"-
_ r---!,.SO mA
le~300mA
Observe that at Ie = ISO mA an overdrive factor of
at least 3 is required to drive the transistor well into
the saturation region. From Figure I, it is seen that
-
h.. @ 1 volt is approximately 0.60 of h.. @ 10 volts.
\ ['..... Using the guaranteed minimum of 100 @ 150 mA and
\ SOmA
I--- 10 V, po = 60 and substituting values in the overdrive
~ 0.2 equation, we find:
IOj_ 3=~
ISO/I"
1.. = 7.5 mA
Ipol P~. OVERDRIVE FACTOR

2.0 +2.0
II ,III I III I
1.6 T 1=12Jo!
J1 1
+1.0 I ~e FJR Je~(~AT~
I I II I
n 55:C TO +25°C
V"ISATlmm' =~ ~
I.!
i
~
1.2 P
>
§ +25°C TO + moc
~ 15!;l
j;
0.8 ~I -1.0 ~~ FO~ J"II III
i.:
vlL !!i
? V'E@VeE 1.0 8 II I III.LU ~f-
0.4
+25°C TO +175°C
"I ...
-2.0
l;'~
o
VeE ISATI @ lell, - 10
-3.0
-nI01+15~t
0.5 1.0 2.0 5.0 10 20 SO 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500
Ie. COLLECTOR CURRENT (mAl Ie. COLLECTOR CURRENT (mAl
2-366
2N2904,A thru 2N2907,A/2N3485,A, 2N3486,A(continued)
NOISE FIGURE
VCE = 10 V. T A = 2SoC
FIGURE 5 - FREQUENCY EFFECTS FIGURE 6 - SOURCE RESISTANCE EFFECTS
6.0 10
11111 II 1111
8.0
\ Ie ~ 10 p.A f~ l.IikHz V
1\ I I
4.0 I-N-+-t1--tt++t+++I-tt-ttlH-t-t-t-+t+t-ttl
Ic~IO"" i
m
6.0
1\ 'b V II
\ 100pA
V
3.0 tt1jttn1tttt:1=t!~RS~~i4~.1~kk!llt~:111111fH 0::
~
iii 4.0
I\~ '\ I
2.0 p...:1-....--I_-If-+++H+H-+-+-+ ~~:: ~:~ ~ \Ii r-..\ "I'-.I ~
,\[\ !-'V
..... -
1.0 I-H-+=f1~+t++++I+I+l-f+-+-+--+-+++I+H
111111 2.0
lmA
Ie ~ 100 p.A ~
I-H-If-+++H+H-+-+-+ Rs ~ 1.2 kll +-++++tIti
0~~~~~~~~~11~"~1"~1~~~~ o
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f. FREQUENCY (kHz) Rs. SOURCE RESISTANCE (k OHMS)
h PARAMETERS
VCE = 10 Vdc. f = 1.0 kHz. T A = 25°C
This group of graphs illustrates the relationship between hfe and other "h" parameters
for this series of transistors. To obtain these curves, a high-gain and a low'gain unit were
selectad and the same units were used to develop the correspondinglv numberad curves
on each graph.
FIGURE 7 - INPUT IMPEDANCE FIGURE B - VOLTAGE FEEDBACK RATIO
20 20
...... "\.
10
l"\ '\
~
5.0
~ 10
'"
0
""
~
, i,.'" 5.0
z:
~ 2.0 "-
r-... liil
'\.'
'\
....... ~
l!
.....-
5
!Ii:
1.0 2
~
2.0
1' ..... ~
;5
.J 0.5 is! I"\. 2
r.... ..1 .......
1.0 ~
0.2
.........
0.1 I' 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.1 0.2 0.5 1.0 2.0 5.0 10 20
Ie. COLLECTOR CURRENT (mAdel Ie. COLLECTOR CURRENT (mAde)
FIGURE 9 - CURRENT GAIN FIGURE 10 - OUTPUT ADMITTANCE

300 500
/
z
:cto 200
200
I- V
~
'"
'"
::>
'" ~~~
-I--
I-- I 100
/
~
.....
<
z
to
100
I-
~
50
,
~< 70
~
V
'"'
'"
2
20
./
./2
:i 50
o
j
10
1/ V
30 5.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.1 0.2 0.5 1.0 2.0 5.0 10 20
2-367
FIGURE 11 - TURN ON TIME FIGURE 12 - CHARGE DATA

500
II jill J 5000 ....,..
II II i"'"
300 3000
----·VCC = 30 v. VBElofil = 2.0 V- Vee~30V
200 - - VCC = 10 v. VBElofil = 0 V l - 2000
1/
t, , , ...... I'OT. TOTAL CONTROL CHARGE
100 ~ 1000
:;
! 70
50
'" ....
",
..
. I
d 500
L
"
- -
...
~; ,......
30
20
" ...
,
- - ~'
300
200
OA, ACTIVE REGION CHARGE
,
10
i' 100 I \I
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0. 10 20 30 50 70 100 200 300 500
Ie. COLLECTOR CURRENT ImAl Ie, COLLECTOR CURRENT ImAl
FIGURE 13 - STORAGE TIME FIGURE 14 - FALL TIME

500 500
III I I I
300 II I 300 , I I
200 1,.-1.-:111" 200
"
Vee~30V
1,,~112
-
_
~
liiiloo
>-
~
70
IBI = IB2 ~
~
'"
;::::
~
100
70
" ~,
lel l, 0
~I;;
.J
50 lello
~- .. :-::-
.:i 50 lel l, 10
. ..
30 ml.," ..t--..,
... 30 -
1-1"1
, ......
20 ~:e(:, - 21 20
10 III 10
20 30 50 70 100 200 300 500
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10
Ie. COLLECTOR CURRENT ImAl Ie, COLLECTOR CURRENT (mAl
FIGURE 15. - DELAY AND RISE FIGURE 15b - STORAGE AND FALL
TIME TEST CIRCUIT TIME TEST CIRCUIT
-30 +15V -6.0
INPUT 200 INPUT

lo=50n 1.0 k 37
Zo=50n
PRF = ISO PPS PRF = ISO PPS
RISE TIME" 2.0 ns RISE TIME" 2.0 14
1.0 k
1.0 k
o_~
TO OSCI LLOSCOPE TO OSCI LLOSCOPE
RISE TIME" 5.0 ns RISE TIME" 5.0 ns
50 50 IN916
-J200nsL
2-368
2N2904,A thru 2N2907,A/2N3485,A, 2N3486,A(continued)
FIGURE 16 - CURRENT-GAIN-BANDWIDTH PRODUCT FIGURE 17 - CAPACITANCES

500 40
...
:c
~
t;
:0
'"~
::
I:;
300
200
100
r-l-- V~E='2JJ
TJ = 250 C
,/
...... 1-" - .... _f-
~
20
I--
r- -t--r-
-r-
......
........
........ C"
TJ = 25'C
~
z: 70
!i 10
1i!i ~ 8.0
I 50 § 6.0
~
Cob I-
/ u
30 .....
IB 20
1/ 4.0
......
,.f V
10 V 2.0
0.1 O.L 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.1 0.2 0.5 1.0 20 5.0 10 20 40
Ie, COUECTOR CURRENT ImAde) REVERSE BIAS IVOLTS)
FIGURE 18 - ACTIVE REGION SAFE OPERATING AREAS
...
2.0
1.0
'"
tOms, , .....
10",,,,-
This graph shows the maximum IC-VCE limits of the device
~ 0.7 both from the standpoint of thermal dissipation (at 2So C case
OO.c
....
ill
0.5
r TO 1S
· """ ..
:,.
TO·5 temperature), and secondary breakdown. For case temperatures
other than 2So C, the thermal dissipation curve must be modified
.
'"'"=> 0.3
0.2
r-T046 in accordance with the derating factor in the Maximum Ratings
table.
'"0
~ 0.1
TJ = 2000 C
F= --- Second Breakdown Limited
.
....;:....
~
de D...
To aV!)id possible device failure, the collector load line must
fall below the limits indicated by the applicable curve. Thus, for
cartain operating conditions the device is thermally limited, and
8 0.01 ~~ - .... -
Pul" Duty Cycle .. 10%
Bonding Wire Limited
for others it is limited by secondary breakdown.
§ 0.05 For pulse applications, the maximum IC-VCE product indicated
I- - - - - Thermal limitations @TC=250 C
by the de thermal limits can be exceeded. Pulse thermal limits
0.03 r Applicable For Rated BVCEO
may be calculated by using the transient thermal resistance curve
0.02 of Figure 19.
2.0 3.0 5.0 7.0 10 20 30 40
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)
-
....
ill
in 0.5
2
..:
......
"''''
",2 ~ f-"
~~ 0.2
........
~fficc
u.. 0.1
TO·5 PACKAG~ .,.. 1:::::::: 9JC(t) = r(t)9JC
"'-'
0":
"''''
~~ 0.05 T046
~~ ~ 1..&"
TO·18
'"o ~
2 0.02
"t
0.01
10--4 10-1
t, TIME I,)
2-369
2N2912 (GERMANIUM)
PNP high-speed, high-frequency power transistor

especially designed for switching and power converter
circuits operating from low-voltage power sources such
as solar cells, thermo-electric generators, sea cells,
CASE 8
fuel cells and 1. 5 volt batteries.
MAXIMUM RATINGS
Rating Symbol Rating Unit
Collector-Emitter Voltage vCEO 5.0 Vdc

Collector Current-Continuous IC 25 Adc
Base Current-Continuous IB 3.0 Adc

Derate above 35°C 1.0 wjOc

T J , Tstg -65 to +110 °c
Temperature Range
Lead temperature 1/16" from case for 10 seconds = 240·C

Thermal Resistance, Junction to Case IJJC 1.0 °cjw
Thermal Resistance, Case to Ambient IJ CA 30 °Cjw
FIGURE l-ACTIVE-REGION SAFE OPERATING AREA

25
1 The Safe Operating Area Curves in-
dicate Ic - VCE limits below which
20 1 ..---- J,..-dc the device will not enter secondary
r ......
....".. 1---'-5 ms
breakdown. Collector load lines for
, ----
I specific circuits must fall within the
applicable Safe Area to avoid caus·
1
".
1---'-1 ms or less ing a catastrophic failure. These
15
curves are applicable for all case
temperatures, however, the nominal _
power-temperature derating is 75
10 watts minus 1.0 watt for each °C
when Tc ~ 35°C.
5.0
l£-500 rnA /"1OmA

2.0 4.0 6.0 8.0 10 12 14 16 18 20
VCE, COLLECTOR-EMITIER VOLTAGE (VOLTS)
2-370
2N2912 (continued)
ELECTRICAL CHARACTERISTICS (Tc = 2S"C unle•• otherwise noted)
Characteristic Fig. No. Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage"
(Ic = SOO mAdc, IB = 0)
BVCEO " 5.0 -
Vdc
Collector-Emitter Sustaining Voltage"

(Ic = SOO mAdc, Ia
= 0)
BVCEO(sus) " 5.0 -
Vdc
Collector Cutoff Current ICES mAdc

(VCE = 15 Vdc, VBE = 0) - 10
Collector Cutoff Current ICER mAde

(VCE = 15 Vdc, RBE = 5.0 ohms) - 10

(VCE = 15 Vdc, VBE(off) = 0.2 Vdc) - 10
(VCE = 5.0 Vdc, VEB(off)= 0.2 Vdc, TC = 85·C) - 15

(VCB = 15 Vdc, ~ = 0) - 10
Emitter Cutoff Current mAdc

~BO
(VBE = 1.5 Vdc, IC = 0) - SO
ON CHARACTERISTICS
(IC = 10 Adc, VCE = 2.0 Vdc) ISO -
Uc = 5.0 Adc, VCE = 2.0 Vdc) 200 800

(Ic = 5.0 Adc, Ia
= O. 5 Adc) - 0.12
(Ie = 25 Adc, Ia = 2. 5 Adc) - 0.5

(Ie= 5.0 Adc, Ia
= O. 5 Adc) - 0.5
(IC = 25 Adc, Ia = 2. 5 Adc) - 1.2
Uc = 5. 0 Adc, VCE = 2.0 Vdc, f = 1.0 MHz) 10 -
Rise Time 3 tr iJ.S
(VCC = 10 Vdc, IC = 5.0 Adc) - 2.0
Storage Time 3 ts iJ.S

(VCC = 10 Vdc, Ie = 5.0 Adc) - 10
Fall Time 3 tf I'S

(Vcc • 10 Vdc, IC = 5.0 Adc) - 2.0
"Sweep Test: 1/2 Cycle sine wave, 60 Hz
FIGURE 2- TYPICAL COLLECTOR CHARACTERISTICS FIGURE 3 - SWiTCHING·TlME TEST CIRCUIT

20 SOmA
100~gg; SCOPE
18
~,...". 40mA
16
I. 0- 3O~
"
Ii:
0.10
~ 14 2.00 CARBON
8 12 ~ I
GO:
...
GO:
:::> r/ 20mA
10
~ 8 V I
~
~
6
4
10mA
I
PRF= 200 Hz
PW= SO p.S
ADJUST FOR
2 I III(ONI = 0.2SA
~ 1.-OmA 10V
0.2 0.4 0.6 0.8 1.0
+
Va. COLL£CTOR.£MlnER VOlTAGE IWlTSl
2-371
2N2972 thru 2N2979
2N2919 JAN &JTX AVAILABLE
2N2920 JAN & JTX .
Dual NPN silicon annular tranSistors, especially

designed for low-level, low-noise differential~amplifier
applications, feature very high Beta guaranteed from
10 JiAdc to 1. 0 mAdc and excellent noise character-
istics.
CASE 635 CASE 654-04

2N2972 (TO-71) 2N2913
thru thru
2N2979 2N2920
Pins 4 and 8 omitted

All leads Electrically Isolated From Case
MAXIMUM RATINGS (each side) (TA =25°C unless otherwise noted)

2N2913-18 2N2919-20
Rating Symbol 2N2972-77 2N2978-:-79 Unit
Operating and Storage Junction Temperature Range T J' T stg -65 to +200 °C
One Both.
Side Sides
Total Deville Dissipation @ T A = 25°C PD
Case 654-04 300 600 mW
Case 655 250 300 mW
Derate above 25°C 1. 43 1. 72 mW/oC
Total Device Dissipation @ TC = 25°C PD
Case 654-04 750 1500 mW
Derate above 25°C .4.3 8.6 mW/oC
Case 655 500 750 mW
2-372
ELECTRICAL CHARACTERISTICS (each side) (T.= 2S"Cunle•• otherwi.enoled)

Characteristic I Symbol Min I Typ I Max Unit
OFF CHARACTERISTICS
Collector~EmitterSustaining Voltage BVCEO(sus) Vde
(Ic = 10 mAde, IB = 0) 2N2913 thru 18, 2N2972 thru 77 45 -
2N2919, 2N2920, 2N2978, 2N2979 60 -
(IC = 10 !JAde, IE = 0) 2N2913 thru 18, 2N2972 thru 77
2N2919, 2N2920, 2N2978, 2N2979
45
60
--
(IE = 10 !JAde, IC = 0) 6.0 -
Collector Cutoff Current ICEO !JAde
(VCE = 5.0 Vde, IB = 0) - - 0.002
Collector Cutoff Current ICBO !JAde

(VCB = 45 Vde, IE = 0) 2N2913 thru 18, 2N2972 thru 77 - - 0.010
2N2919, 2N2920, 2N2978, 2N2979 - -- 0.002
(VCB = 45 Vde, IE = 0, TA = 150"C) All Types - 10
Emitter Cutoff Current lEBO !JAde

(V EB = 5.0 Vde, IC = 0) - - 0.002
ON CHARACTERISTICS
DC Current Gain'l1I hFE -
(IC = 10 !JAde, VCE = 5.0 Vde) 2N2913, 15,17,19, 2N2972 , 74, 76, 78 60 - 240
2N2914, 16, 18,20, 2N2973, 75, 77,79 150 - 600
(IC = 10 !JAde, VCE = 5.0 Vde, TA = -55·C) 2N2913, 15, 17, 19, 2N2972, 74, 76, 78
2N2914, 16, 18,20, 2N2973, 75, 77, 79
15
30
-- --
(IC = 100 !JAde, VCE = 5.0 Vde) 2N2913, 15, 17, 19, 2N2972, 74, 76, 78 100 - -
2N2914, 16, 18,20, 2N2973, 75, 77, 79 225 - -
(Ie = 1. 0 mAde, VCE = 5.0 Vde) 2N2913, 15, 17, 19, 2N2972, 74, 76, 78 150 - -
2N2914, 16, 18, 20, 2N2973, 75, 77, 79 300 - -
(IC = 1. 0 mAde, IB = 0.1 mAde) - - 0.35

(Ie = 100 !JAde, VCE = 5.0 Vde) - - 0.7
(IC = 500 !JAde, VCE = 5.0 Vde, f = 20 MHz) 60 - -
(VCB = 5.0 Vde, IE = 0, f = 140 kHz) - 4.0 6.0
Input Impedance hlb ohms

(Ie = 1.0 mAde, VCB =5.0 Vdc, 1= 1.0 kHz) 25 28 32
Output Admittance hob IJ.lIlhos

(IC = 1.0 mAde, VCB = 5.0Vde, I =1.0kHz) - - 1.0
Noise Figure NF dB
(IC = 10 !JAde, VCE = 5.0 Vde, RS = 10 k ohms,
f = 1.0 kHz, BW = 200 Hz) 2N2914, 16, 18, 20, 2N2973, 75, 77, 79 - 2.0 3.0
2N2913, 15, 17, 19, 2N2972, 74, 76, 78 - 3.0 4.0
(IC = 10 !JAde, VCE ~ 5.0 Vde, RS = 10 k ohms, -
f = 10 Hz to 15.7 kHz, BW = 10 kHz,) 2N2914, 16, 18, 20, 2N2973, 75, 77, 79 - 2.0 3.0
'2N2,913, 15, 17, 19, 2N2972,,H, 76, 78 3.0 4.0
DC Current Gain Ratio*· hFE1/hFE2** -

(IC = 100 !JAde, VCE = 5.0 Vde) 2N2917,18, 2N2976,77
2N2915, 16, 19,20, 2N2974, 75, 78, 79
0.8
0.9
-
-
1.0
1.0
Base Voltage Differential
(IC = 10 !JAde to 1. 0 mAde, VCE = 5.0 Vde) 2N2917,18, 2N2976,77
IVBE1- VBE21 - -- 10
mVde
2N2915, 16, 19,20, 2N2974, 75, 78, 79 - 5.0

(Ie = 100 !JAde, VCE = 5.0 Vde) 2N2917,18, 2N2976,77 - - 5.0
2N2915, 16, 19,20, 2N2974, 75, 78, 79 - - 3.0
Base Voltage Diflerential Gradient ~VBECVBE2) mVde
(Ie = 100 !JAde, VCE = 5.0 Vde, T A = -55·C to +25·C)
2N2917,18, 2N2976,77
2N2915, 16, 19,20, 2N2974, 75, 78, 79
-- -
-
1.6
0.8
(IC = 100 !JAde, VeE = 5.0 Vdc, T A = +25"<: to +125"<:)
2N2917,18, 2N2976,77
2N2915, 16, 19,20, 2N2974, 75, 78, 79
-- -- 2.0
1.0
111 Pulse Test: Pulse Width ~ 300 jJS, Duty Cycle ~ 2.0%.
** The lowest hFE reading is taken as hFEl for this ratio.
2-373
2N2929 (GERMANIUM)
PNP germanium epitaxial mesa transistor for low

noise, broadband, power and driver amplifier appli-
cations.
CASE 31
(TO-S)
Collector connected to else
MAXIMUM RATINGS


Collector Current Ie 100 mAde


JW1ction Temperature TJ 100 °c
NORMALIZED DC CURRENT GAIN CHARACTERISTICS

1.2
1.0
~5'C / ..... 1--''''-
TJ -
,/' / "
/
.....
.....--- - ~ i'..
I':l\.
/ ~ ~
,/ TJ = 25'C
~
/ V \
~ 1\
\
0.4
-1 -2 -5 -7 -10 -20 -so -70 -100
2-374
2N2929 (Continued)
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noteeil
Cha racteristic Sym Test Conditions Min Typ Max Unit

Collector-Base Breakdown Voltage BVCBO Ie= 100 /.IAdc, IE = 0 25 45 - Vdc
Collector-Emitter Breakdown Voltage BVCES Ie= 100 /.I Adc, VEB = 0 25 45 - Vdc
Collector-Emitter Breakdown Voltage BV CEO IC = 10 mAdc, IB = 0 10 20 - Vde
Emitter-Base Breakdown Voltage BVEBO I E = 1 mAdc, Ie = 0 0.75 1.5 - Vde
Collector Cutoff Current IeBO VCB = 10 Vde, IE = 0 - 0.15 5.0 /.IAdc
VCB = 10 Vde, IE = 0, TA =+55 0 C - - 50
Emitter Cutoff Current lEBO VEB = 0.5 Vde, Ie = 0 - 1.0 100 /.lAde
DC Forward Current Transfer Ratio hFE VCE = 10 Vde, Ie = 10 mAde 10 30 100 -

Collector-Emitter Saturation Voltage VCE(sat) IC = 50 mAde, IB = 10 mAde - 0.15 0.5 Vde
Base-Emitter Saturatior. Voltage VBE(sat) IC = 50 mAde, IB = 10 mAde - 0.55 1.0 Vdc
Small-Signal Forward Current

Transfer Ratio
hre Ie= 10 mAde, VCE = 10 Vde, f = 1 kHz 10 35 120 -
Current Gain - Bandwidth Product IT IC = 10 mAde, VCE = 10 Vde, f = 100 MHz 800 1100 1400 MHz
IC = 20 mAde, VCE = 10 Vdc, f = 100 MHz 1000 1250 1600
Ie= 40 mAdc, VCE = 10 Vdc, f = 100 MHz 700 1200 -

Collector-Base Time Constant ~' Cc VCB = 10 Vdc, IE = 20 mAdc, f = 31.8MHz 10 25 40 ps
Real Part of Small-Signal Short

Circuit Input Impedance Re(h ie ) IC = 10 mA, VCE = 10 V, f = 1000 MHz - 45 75 ohms
Collector-Base Capacitance Cob VCB = 10 Vde, IE = 0, f = 100 kHz

- 1.75 2.5 pF
Power Gain Ge VCE = 10 Vdc, Ie = 10 mAdc, f = 60 MHz 26 28 - dB
VCE = 10 Vdc, Ie • 10 mAdc, f = 200 MHz - 16 -

Noise Figure NF VCE = 10Vdc,IC = 2 Adc,f = 200MHz - 5.5 - dB
RG = 50n
NOISE FIGURE versus FREQUENCY MAXIMUM AVAILABLE GAIN versus FREQUENCY

10 40
Ie = -lo/rnA
_V c,=-IOV I, I
VCE-=-IOV
Ic=-IOmA
t
30 ~ "'-....,
;) ....
{/ iii
"1§z - r-NEUT GAIN
. .0-....
--
MAG=~
50~Z l-?" ~
10
~ 41gl l gnl
V
~
R, ISO!!
d
'~
10
"I'
1
10 30 50 70 100 100 20 30 50 70 100 100 500
f. FREQUENCY I MH,) f. FREOUENCYIMH,)
2-375
2N2944 (SILICON)
2N2945 PNP silicon annular transistors designed for low-level,
high-speed chopper applications.
2N2946 MAXIMUM RATINGS
Rating Symbol 2N2944 2N294S 2N2946 Unit
Emitter-Collector Voltage VECO 10 20 35 Vde
Collector-Base Voltage VCS 15 25 40 Vdc
Emitter-Base Voltage VES 15 25 40 Vde
Collector Current IC -100- mAde

CASE 26 Total Device Dlsslpati~. @ PD -500- mW
(T0-46) TA =25·C
Derate ,above 25° C -2.8- mWrC
Collector electrically Total Device Dissipation @ PD _2.0_ Watts
TC = 25°C
connected to case
Derate above 25° C _11.4_ mWrC
OperaUng and" storageJunctton TJ,Tstg _ -85 to + 2 0 0 - ·C
Temperature Range

Characteristic I Symbol Min Typ I· Max Unit
OFF CHARACTERISTICS
Collector Cutoff Current I CBO nAdc
(VCB = 15 Vde, ~= 0) 2N2944 - - 0.1
(VCB = 25 Vde, ~ = 0) .2N2945 - - 0.2
(VCB =40Vde, ~ =0) 2N2946 - - 0.5

~BO DAde
(VEB = 15 Vdc, IC = 0) 2N2944 - - 0.1
(VEB = 25 Vdc, IC = 0) 2N2945 - - 0.2
(VEB = 40 Vde, IC = 0) 2N2946 - - .0.5
ON CHARACTERISTICS
DC Current Gain ilpE
. -
(Ic = 1.0 mAde, VCE = O. 5 Vdc) 2N2944 80 180
2N2945
2N2946
40
30
160
130
--
Forward Current Transfer Ratio (inverted connection)
(IC = 200 "Ade, VCE = 0.5 Vdc) 2N2944
ilpE(inv)
6.0 20 -- -
2N294fi 4.0 17
2N2946 3.0 15 -
Offset Voltage VEC(off) mVdc
(~ =200 "Adc, ~ = 0) 2N2944
2N2945
-- 0.18
0.23
0.3
0.5
2N2946 - 0.27 0.8
(IB = 1.0 mAdc, ~ = 0) 2N2944
2N2945
-- 0.4
0;5
0.6
1.0
2N2946 - 0.6 2.0
Us = 2.0 mAde, ~ = 0) 2N2944
2N2945
-- 0.8
0.9
1.0
1.6
2N2946 - 1.0 2.5
Current-Gain-Bandwldth Product fT MHz
(IC = 1.0 mAde, VCE = 6. 0 Vdc, f = 1.0 MHz) 2N2944
2N2945
10
5.0
15
13
--
2N2946 3.0 12 -
(VCB - 6. 0 Vdc, ~ = 0, f = 500 kHz) - 3.2 10
Input Capacitance . Cib · pF

(VEB = 6.0 Vdc, IC = 0, f = 500 kHz) • - 1.9 6.0
Dynamic On Series Resistance rec(on) atms

(IC = 100 "Ade, ~ = 1.0 mAde, ~=0,f=I.0kHz) 2N2944
2N2945
-- 4.0
4.5
20
35
2N2946 - 5.0 45
2-376
2N2947(SILICON)
2N2948
NPN silicon annular transistors for power amplifier

applications to 100 MHz.
CASE 1
(TO-3)
MAXIMUM RATINGS*
Collector- Base Voltage VCB 60 40 Vdc
Emitter - Base Voltage VEB 3.0 2.0 Vdc
Collector- Current (continuous) IC 1.5 Adc
Base-Current (continuous) IB 500 mAdc
Power Input (Nominal) P. 5.0 Watts

In
Power Output (Nominal) P 20.0 Watts

out
Total Device Dissipation PD 25.0 Watts
@ 25 °C Case Temperature
Derating Factor above 25 0 C 167 mWjOC
Storage Temperature Range -65to+175 °c

Tst!!:
*The maximum ratings as given for de conditions can be

exceeded on a pulse basis. See electrical characteristics.
2-377
ELECTRICAL CHARACTERISTICS (TA = 2SOC unlessotharwise noted)
Characteristic Symbol Test Conditions ·Min Typ Max Unit

Collector- Emitter
Sustain Voltage
VCES (sJ~\' 2N2947: IC = O. 250 A, RBE = 0 90 120 -- Volts
2N294S: IC = O. 250A, RBE = 0 SO 100 --

Collector- Emitter- III
VCEO(sus) 2N2947: IC = O. 250A, IB = 0 40 -- -- Volts
Open Base
Sustain Voltage 2N294S: IC = O. 250A, IB = 0 20 -- --
Collector- Emitte~
Current
ICES 2N2947: VCE = 60 Vdc, VBE = 0 -- -- 0.5 mAde
VCE = 50 Vdc, VBE = 0, TC = 175'C -- -- 1.0
2N294S·· VCE = 40 Vdc, VBE = 0 -- -- 0.5
VCE = 30 Vdc, VBE = 0, TC = 175'C -- -- 1.0
Collector Cutoff
Current
I CBO 2N2947: VCB = 50 Vdc, IE = 0 -- -- 1.0 I'Adc
2N294S: VCB = 30 Vdc, IE = 0 -- -- 1.0
Emitter Cutoff
Current
lEBO 2N2947: VEB = 3 Vdc, IC = 0 -- -- 100 I'Adc
2N294S: VEB = 2 Vdc, IC = 0 -- -- 100
DC Current Gain hFE 2N2947: IC = 400 mAde, VCE = 2Vdc 6.0 -- 60
2N294S: IC = 400 mAde, VCE = 2 Vdc 2.5 -- 100
Both Types: IC = 1 Adc. VCE = 2 Vdc 2.5 -- --

Collector- Emitter
VCE(sat) IC = 1. 0 Adc, IB = 500 mAdc -- -- 0.5 Vdc
Saturation Voltage
Base-Emitter
Saturation Voltage
VBE(sat) IC = 1.0 Adc, Ia = 500 mAdc -- -- 2.0 Vdc
AC Current Gain Ihfe l VCE = 2.0 Vdc, IC = 400 mAde, f = 50 MHz 2.0 -- --
Collector Output
Cob
VCB = 25 Vdc, [E=O, f = 100 kHz -- -- 60 pF
Capacitance
Power Input Pin Pout = 15 W, f = 50 MHz, VCE = 25 Vdc -- 2.0 3.0 Watts
Efficiency
" IC(max) = 1A 2N2947 60 SO -- %
Power Input Pin Pout = 15 W, f = 30MHz, VCE = 25 Vdc -- 2.0 3.0 Watts
Efficiency IC(max) = 1. 0 A 2N2948 60 70 -- %

"
III Pulse Measurement: Pulse Width:; 1001's, Duty Cycle = 2. 0%.
2-378
2N2947,2N2948 (continued)
POWER OUTPUT versus FREQUENCY OUTPUT CHARACTERISTICS versus POWER INPUT
25
20
f\ 1\1\ \\ '
80
70
60
20
IS
V
COLL EFF.
I-"""
V --
/
7
2.0
~
~
P"'y
,,
~ 50
2N2948 f-ol
2N2947 _ - ~ ....
=>
p,. = 3W
\
p.. = 3W <.>
tt 40
0-
g10 / l.--
V
~ .. =2.SW ~
'"G 30
0 '"~ V ?
~
\ ~
~
<.>
20
J / ./
V 2N2947
Ve• = 2SV
/Y f=50MHz
o
10
Vc~ ::=
20
25V
Te = 2S'C
40 60 80 100
\'\~ 200 300
10
o
o
,
o.S I I.S 2 2.5
Te = 2S'C
3.5
o
f, FREQUENCY IMH,) p.. , POWER INPUT (WATTS)
POWER OUTPUT versus COLLECTOR VOLTAGE POWER OUTPUT versus POWER INPUT
20 20r-----,------.----~~----_r----_.
/ IS~----4_--·--~~----~----~--~~
~5
// 0-
gIO~----4_~--_t--~~~----~----~
V 2N2947
P,.=3W
= 50MHz i
/
f
Te = 2S'C
,/ 2N2947
/
f=50MHz
Te = 2S'C
o
o 10 15 20 25 2 3
Va. COtLECTOR-EMITTER VOLTAGE (VOLTS) p,., POWER INPUT (WATTS)
2-379
2N2949 (SILICON)
2N29S0
NPN silicon annular transistors for power amplifier

and driver applications to 100 MHz.
(TO·l07) Collector connected to case;
2N2949 2N2950
MAXIMUM RATINGS-
~~ting Symbol Value Unit
Collector- Base 'V()ltage VCB 60 Vdc
Emitter - Base Voltage VEB 3.0 Vdc
Collector Current (Continuous) IC 0.7 Adc
Base Current (Continuous) IB 100 mAdc
RF Input Power (Nom) Pin 1.0 Watt
RF Output Power (Nom) Pout S.O Watts

Total Device Dissipation 6.0 Watts
(2S0C Case temperature) Po 40 mW/oC
(Derating Factor above 25°C)
Total Device Dissipation at 2N2949 2N2950
25° Ambient Po 0.5 0.7 Watt
(Derating Factor above 2S0C) 3.33 4.67 mW/·C
Junction Temperature TJ 175 ·C
Storage Temperature Range Tstg -65 to + 175 ·C
* The maxImum ratings as gIven for de condItions can be. exceeded on a pulse baSIS. See Electrical
Characteristics.
/
V
V P" = 0.2SW
// 1=50 MHz
Tc = 25'C
/'
o V
o 5 10 15 20 25
OL-----~----~----~----~----~
o 0.1 0.2 0.3 0.4 0.5
VeE, CotLECTOR-EMITTERVOLTAGE (VOLTS) p.., POWER INPUT (WATTS)
2-380
ELECTRICAL CHARACTERISTICS ITA = 250 C unless otherwise noted)
Characteristic Symbol Test Conditions Min Typ Max Unit

111
Collector-Emitter Sustain Voltage VcEs(swii IC=O. 250 A, R BE = 0 85 120 -- Volts
111
Collector Emltter- Open Base
Sustain Voltaire
VCEO(sus) IC=0.250A, IB=O 40 -- -- Volts
Collector-Emitter Current
ICES VCE= 60 Vdc, VBE=O -- -- 100 "Adc
VCE =50 Vdc, VBE= 0 -- -- 500
TC= + 175'C
Collector - Cutoff Current ICBO VCB=50 Vdc, ~=O -- -- 0.1 "Adc
Emitter-Cutoff Current lEBO VEB = 3 Vdc, IC=O -- -- 100 "Adc
DC Current 'Gain hFE VCE = 2.0Vdc

IC= 40 mAdc
5.0 -- 100 --
VCE =2.0 Vdc 5.0 -- -- --
IC= 400 mAdc
Collector - Emitter Saturation

Voltage 'tE(Sai) IC = 400 mAdc, 's= 80 mAdc -- -- 0.5 Vdc
Emitter-Baee Saturation Voltage

VBE(sat) IC=400 mAdc, IB=80mAdc -- -- 2.0 Vdc
AC Current Gain
I hfel VCE =2.0 Vdc 2.0 -- -- --
IC=40 mAdc, f=50 MHz
Collector Output Capacitance Cob VCB= 25 Vdc, I E=O -- -- 20 pF

f=IOOkHz
Power Input Pin
P out=3. 5 watts, f=50 MHz
-- -- 0.35 Watt
VCE=25 Vdc, IC (max)=325 mA

Efficiency
-- --
" 43 %
111 Pulse Width' 100/18, Duty Cycle = 2%
POW.ER OUTPUT versus FREQUENCY OUTPUT CHARACTERISTICS versus POWER INPUT

100
\ 1\ 1\1\ 90
p••,-
~
80 800
\ \ VeE = 25V
/'
1\ Te = 2S'C ~ ~ 70 1...
~3
>-
ffi 60 L 600 ~
z
\
~
--- ---
=> U
0-
B
\ ~ P.. =0.4W
!; § 50
0
/ COlL. HF.
"-., e'"
~2 '"~ 40
~ ~
/ ..-- 400 ~
\\
5
J 830 '"
.9
V ~ i"- Ie
20 200
o
10 20 40
prtni-\ 1\
60 80 100 200 300
10
o
o
/
0.1 0.2 0.3
Ve
0.4
= 25 Vdc
t::..:
Tc ~ 25°C
50 MHz
0.5
f, FREQUENCY IMH,.j p,., POWER INPUT IWAITS)
2-381
2N2951 (SILICON)
2N2952
CASE 31
(TO·5)
2N2951
CME~(TO·l8)
2N2952

NPN silicon annular Star transistors for power am-
plifier applications to 100 MHz.
MAXIMUM RATINGS.
Rating Symbol Value Units

Collector- Emitter Voltage VCES 60 Vdc
Emitter- Base Voltage VEB 5.0 Vdc
Collector Current (continuous) IC 250 mAdc
Base Current (continuous) IB 50 mAdc
2N2951 2N2952
(25°C Case Temperature) 3.0 1.8 Watts
(Derate above 25"C) 20 12 mW/"C

(25° C Ambient Temperature) 0.8 0.5
(Derate above 25°C) 5.33 3.33 mW/"C
Junction Temperature TJ -65 to 175 °c
Storage Temperature Range T stg -65 to 175 °c
• The maximum ratings as given for dc conditions can be exceeded on a pulse basis.
See Electrical Characteristics.
2-382
ELECTRICAL CHARACTERISTICS (TA = 2S0 C unless otherwise noted I
Characteristic Symbol Conditions Min Max Unit

Collector-Emitter Current ICES VCE = 60Vde, VBE = 0 -- 100 /LAde
VCE = 50Vde, VBE = 0, T C = 175°C -- 500 /LAde
Collector Cutoff Current I CBO VOB = 50 Vde, ~ = 0 -- 0.1 /LAde
Emitter Cutoff Current lEBO VEB = 5 Vde, IC = 0 -- 100 /LAde
DC Current Gain hFE IC = 10 mAde, VCE = 10Vde 20 150 --

IC = 150mAdc', VCE = 10 Vde* 20 -- --
Collector- Emitter Saturation Voltage VCE(sat) IC = 150 mAde, IB = 15 mAde -- 0.5 Vde
Base-Emitter Saturation Voltage vBE(sat) IC = 150 mAde, IB = 15 mAde -- 2.0 Vde
Collector-Emitter Sustain Voltage 111 VCES(sus) IC = 100 mA, RBE = 0 30 -- Volts
Colleetor- Emitter Open Base f1I

Sustain Voltage VCEO(sus) IC = 100 mA, IB = 0 20 -- Volts
AC Current Gain I hfe I VCE = 10 Vde, IC = 10 mAdc 4.0 -- --

f = 50 MHz
Collector Output Capacitance Cob VCB =10Vdc,IE=0, f=100kHz -- 8.0 pF
Test Circuit Fig. 1

Power Input P.m
Pout = 600 mW
-- 100 mW
f = 50 MHz
VCE = 13.6 Vdc
IC(max) = 125 mA
Efficiency rt 35 -- %
IIiPuise Width = 100 /Ls, Duty Cycle = 2%
2-383
-
POWER OUTPUT versus FREQUENCY OUTPUT CHARACTERISTICS versus POWER INPUT
1400 1000 100 200
J
l
I I f=SOMHz
1200
Vee = 13.SVde
Te = 2S'C --
Vo. = 13.6Vde
Te = 2S'C
p~. -
,....- V
800
t-- . / 80 ISO
-- .... -
~Ll.EFF._ :c
1000
~
i"
oS
~ 800
P" = 50 mW - - - \
\.
\; P" = 100mW I- 500
V.... .... 6°ffi
>-
120~
~
z:
!:;
o
'"~ 500
I\, 1\ §
'"~ ,,1
I V ~
~
.
t:;
=>
u
'"
~
\ f 400 40g 80
g
~
oJ 400 1\
j
/'
V .... I e
~
u
u
.§
200 20 40
200
\
810 20 40 SO 80100
\
200 300
o V
o 20 40 SO 80 100 120 140 160 180 200
o
P,,, POWER INPUT(mW)
--
1200 1400
f= 50 MHz·
P" = 100mW
f=50MHz
I J
1000
Te = 2S'C / .... ' ...
1200
Tc = 2S'C
Ve• = 28.0 de .....
- -
.... '" -~
V" " -
/
i" 1000
oS
~
!:;
o
'"
800
I
/
,- .....
./
13.6Vde_
/'
"...
:::::- - I-
/ ~
j
600
/ / S.3Vde_
I 400
,/ ,..-
J / / ......-
200
200
""
o l!
o 10 IS 20 25 30
o ~
o
7
20 40 SO 80 100 120 140 ISO 180 200
Va., COLLECTOR·EMITTER VOLTAgE (VOLTS) P", POWER INPUT(mW)
FIGURE 1 - POWER OUTPUT AND POWER GAIN CIRCUIT
2.7 ,,"
H3.6V .001 ,.F
~
RL = 50n
0.22,.."
0.15,.."
-.:'
4-30 4·30
40·90
NOTt,
GROUND POINT musl be kept as close as
possible to the transistor emitter lead.
Transistor must be mounted with heat sink.
2N2955 (GERMANIUM)
2N2956
2N2957
1(\ PNP germanium epitaxial mesa transistors for high-
CASE2~
(TO.18)Z \ \
MAXI MUM RATI NGS (T A = 250C unless otherwise noted)

Collector-Base Voltage VCS 40 Vdc
Emitter-Base Voltage VES 3.5 Vdc

2N2955 25
Collector-Emitter Voltage 2N2956 VCEO 20 Vdc
2N2957 18
Total Device Dissipation at 25°C

Case Temperature PD 300 mW
Total Device Dissipation at 25°C

Ambient Temperature PD 150 mW
Characteristic Fig. No. Symbol Min Typ Max Unit

(Ie = 100 j.lAdc, IE= 0) 40 60 ---
(IE = 100 j.lAdc, Ie = 0) 3.5 5.0 ---
Collector-Emitter Breakdown Voltage 8 BVCEO Vdc
(Ic = 10 mAde, Emitter-Base 2N2955 25 35 ---
Termination - Open) 2N2956
2N2957
20
18
28
25
---
---
Collector-Emitter Reverse Current j.lAdc
(VCE = 25 Vdc, VEB = 0.5 Vdc)
IcEX
--- --- 10
Base Leakage Current 9 IBL j.lAdc
(VCE = 25 Vdc; VEB = 0.5 Vdc) --- --- 10
2-385
2N2955, 2N2956, 2N2957 (Continued)
Characteristic
On Characteristics
--- ---
Forward Current Transfer Ratio hFE
(Ie = 10 mAde, VCE" 1 Vde) 2N2955 1 20 43
2N2956
2N2957
2
3
30
60
64
105
---
---
(Ic = 50 mAde, VCE = 1 Vde) 2N2955 20 43 60
2N2956 40 76 120
2N2957 100 130 ---
(IC = 100 mAde, VCE = 1 Vde) 2N2956
2N2957
30
60
69
115
---
---
Collector-Emitter Saturation Voltage VCE (sat) Vde
(IC = 10 mAde, IB = 1 mAde) 2N2955
2N2956
5
6
---
---
0.12
0.12
0.20
0.18
2N2957 7 --- 0.09 0.15
(Ic = 50 mAde, IB = 5 mAde) 2N2955
2N2956
---
---
0.20
0.16
0.30
0.25
2N2957 --- 0.13 0.20
(Ie = 100 mAde, lB" 10 mAde) 2N2956
2N2957
---
---
0.23
0.18
0.34
0.26
Base-Emitter Voltage 4 VBE Vde
(IC = 10 mAde, IB = 1 mAde) 2N2955 --- 0.38 0.50
2N2956
2N2957
---
---
0.37
0.36
0.47
0.44
(Ic " 50 mAde, IB = 5 mAde) 2N2955
2N2956
---
---
0.51
0.48
0.65
0.60
2N2957 --- 0.45 0.55
(IC = 100 mAde, IB = 10 mAde) 2N2956
2N2957
---
---
0.56
0.52
0.70
0.65
Transient Characteristics
Output Cap~eitanee 10 Cob pF
(VCS = 5 Vde, IE = 0, f = 1 MHz) --- 2.5 4.0
Input Capacitance 10 Cib
(VBE = 1 Vde, IC = 0, f = 1 MHz) --- 3.3 --- pF
Small Signal Forward Current

Transfer Ratio (VeE = 5 Vde, 2N2955
I lite I 2.0 3.5 --- ---
IC = 10 mAde, f = 100 MHz) 2N2956
2N2957
2.5
3.0
3.75
4.0
---
---
Delay Time 12 td ns
(VCC =12 Vde, Ies = 50 mAde, --- 7.0 15
IB1 = 5 mAde, VBE (Off) =2.2 Vdc)
Rise Time 12,13 tr ns
(same conditions as ~) 2N2955
2N2956
---
---
25
18
40
30
2N2957 --- 15 25
Storage Time 12,16 ts ns
(VCC = 12 Vdc, Ies = 50 mAde, 2N2955 --- 28 40
IB1 = 5 mAde, IB2 = 5 mAde) 2N2956
2N2957
---
---
37
42
55
60
Fall Time 12,15 tr ns
(same cOnditions as t s ) 2N2955
2N2956
---
---
25
18
40
35
2N2957 --- 18 35
Total Control Charge 17 Q,- pe
(Ic '" 10 mAde, IB = 1 mAde) 2N2955
2N2956
---
---
84
88
---
---
2N2957 --- 88 ---
Active Region Time Constant 14 TA ns
(IC = 10 mAde)
--- 2.9 ---
2-386
2N2955. 2N2956, 2N2957 (Continued)
FIGURE 1 - CURRENT GAIN CHARACTERISTICS FIGURE 2 - CURRENT GAIN CHARACTERISTICS

2N2955 2N2956
100
Ve ,= 1Vde
100
, ,.........
80
60
80
60
,.,... r.--
-,
.....
.....-~ .....
.-
i""'~
r- r-~
z
~ 40
50
...... I--' ~ \ \ ~ iIIo..
-..,;:
50
01--'"
,.,...f"'"
...... ..---, ,-l.-\ \ \

I--'" i-'" ~
i ~r::: \
\ I~
I-
~ L,..-
I--'~i-' 1\
i-- TJ =
i--TJ =
75°C
25°C
..,~ 30 0
n r- ... TJ = OOC
1\
j
0
j...- i-"'~i-' jj~ 0
TJ = - 55°C
I\~ r-
'- I- TJ = 75°C
1'-- I-TJ = 25°C
I-TJ = OOC
TJ = , 5 n
1 JCE = 1Vde
10 0
5 6 8 10 20 40 60 80 100 10 20 40 60 80 100
FIGURE 3 - CURRENT GAIN CHARACTERISTICS FIGURE 4 - BASE EMITTER VOLTAGE versus COLLECTOR CURRENT
2N2957
200
- "'I"-
0.8
~~
v- \ r--- 0.7
I--'
v-: ~-\ t- ,....
~r-
--
V
100
/~ \ ...... g 0.6
o
\....... 2:. f.--
..
"...
--
./ \ V
.,. ,..,. ,-~
~
z 80
)( \ \ ~ 0.5 =--:
co
g
L J \
~~ ~K r--
I-
/
~ 60 '"
..,~ V lL\ 1\ \ \.. i- TJ = 75°C ~
::;; 0.4 L ~
~
TJ = 25°C - i-""" i-2N2955
40
vV' \ \ TJ = OOC
TJ = - 55°C_
~
;;'j ~ r\ 2N2956
2N2957
3
>" O.
1/
V O. 2
~e, = 1Vde
20 o. 1
5 10 20 40 60 80 100 20 40 60 80 100
2-387
2N2955, 2N2956, 2N2957 (Continued)
COLLECTOR·EMITTER SATURATION VOLTAGE versus BASE CURRENT
FIGURE 5 -2N2955
1.0
, 1
\ TJ = 2SOC
U> 0.8 I \
!:; lOrnA 20m'A' \ SOmA
g
'"
~. 0.6 \
> \
tiS
t; 0.4 \
~
..,
<5 \
j 0.2 \.
...........
I'.. '-
o
0.1 0.2 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8,0 10
I" BASE CURRENT (mAde)
FIGURE 6 -2N2956
1.0
I \ \ TJ = 2SOC
1 \ \
lOrnA 20mA SOmA \ 100mA
\
\ \
\ , \ ,
\. ..... ~
.......... ...........
o
0.1 0.2 .0,4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10
1.0
\ ,
FIGURE 7 -2N2957
TJ =2SoC
lOrnA 20mA
1\
1\
SOmA
,
1\ 100mA
\
\ 1\
0.1
- '\
0.2
- 0.4
\
r--....
0.6 0.8 1.0

"'-
-- 2.0
""-
4.0 6.0 8.0 10

2-388
2N2955, 2N2956, 2N2957 (Continued)
FIGURE 8 - OPEN BASE LOAD LINE RATING & TEST CIRCUIT
V" = -10V Vee

<:;- 80
::i'
.§.
... lK!l
15 60
'"'"
~
...'"0
~
40
0
u
.2
20
2N2955, - 25V 245!l

2N2956, - 20V 1970
00 2N2957, - 18V 1770
10 25 30
Ve•• COLLECTOR·EMITTERVOLTAGE (Vdc)
FIGURE 9 - COMMON EMITTER DC LEAKAGE CHARACTERISTICS

100
V" THRESHOLO OF EMITTER INJECTION BASE LEAKAGE CURRENT TEST CIRCUIT
TJ 85°C - 25 Vdc
I
0
I
TJ 155°C V
+0,5 Vdc
, TJ=V
~
aa.e Leakage Current. III is defined as

base leakage currenl wilh bolh junclions
I Vr=-2y- reverse biased. Ie is always less than IlL
for VOl > Yr. (VOl is off condition base
O. 1 bias. V, is base vollage al Ihreshold of
- 0.5 o 0.5 1.5 2.5 condilion.)
Vo•• BASE-EMITTER REVERSE BIAS (VOLTS)
FIGURE 10 - JUNCTION CAPACITANCE versus REVERSE BIAS FIGURE 11 - TEMPERATURE COEFFICIENTS

5.0 1.5
le/l. = 10
11 1,0
I I
~ eve
Ve• (sal)
1\'~ ~
~- 1--
- - 1-- 1--
co.
- 0
~ l.-
l.- t-
V.. (sal)
S
f""
V
1.0 -2, 0
o 2.0 4.0 6.0 8.0 10 12 14 16 18 20 o 10 20 30 40 50 60 70 80 90 100
REVERSE BIAS (VOLTS) ,Ie. COLLECTOR CURRENT (mAde)
2-389
2N2955, 2N2956, 2N2957 (Continued)
FIGURE 12 - SWITCHING TIME TESTCIRCUIT FIGURE 13 - RISE TIME FACTOR

1.5
t- RISE~TIME l l ~
~
GENERATDR ~ t, T,'II. ,,, -
louT = 50.0 Vee = - 12V Ie. = - 50. mAdc
t, = 10 to 90% rise-time
INPUT PULSE:
tr=tf~lns
1,,=-5mAdc
1.. =-5mAdc ..,~ 1.4 t- TA = active region time constant
=
fJF Ie in saturation/II. (base uon" current)
-
..
!d:::;
INPUTPULSE WIDTH: 2350 VIEIO"1 = +2.2 Vdc
10.0. nsec (50.% D,UTY CYCLE)
t- po = h.. at edge of saturation -
DLJ 1.3
::E
IKO '"
c
;; \.
SCDPE
,"
-lo.V '"
c '\
l,N"'" I MEGO t; 1.2
CIN ~ 20 pF ~
510 t,": I ns ...
::E
.........
~ 1.1
.....
'"
0;; i...... r--
VII = +4.4V
'" 1.0
1.5 2.0 4.0 0.6 8.0 10
- 20
polf!,
FIGURE 14 - ACTIVE REGION TIME CONSTANT FIG,URE 15 - FALL TIME FACTOR

8.0 1.0.
V~=I-IDV
;--
r- FALL-TIME = t, = T, pc F ~
7.0. t, = 10 to 90% fall-t'me
o. 8 r- T, = active region constant
Pc = Ie in saturation I I..
1/
6.0
r-
(base-off current)
110= h.. at edge of saturation
/
5.
o. 6
01\ 1/
4.0.
0.4
)
3.0
II
2.0 ~ o. 2
~
L
1.0
5 10 20
--- 40 60
r:
80100
o ""'~
.02 .05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
1". COLLECTOR CURRENT (mAdc) Po/ile
FIGURE 16 - STORAGE TIME FIGURE 17 - TOTAL CONTROL CHARGE

10 1000
Vee -·5V
6.0 600 lell, 10
TJ 25°C
4.0 U 400 r- 2N2955
....9li! r- 2N2956 -- - - -
2N2957---
...6~
i--"" ....
2.0 0«
::c 20.0
<>
~
1.0 / ....I
C
'"....cz: 100 /'
<>
0.6 60
~
0.:4 0.... 40 -...
~ I
.5
0.2
/ 20
O. I 10.
0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 0..1 0..2 0..4 0.6 1.0 2.0 4.0. 6.0 10.
1,,/1.. CIRCUIT DRIVE RATIO. I" BASE CURRENT (mAdc)
2-390
2N2958 (SILICON)
2N2959
2N3115
2N3116
NPN silicon annular Star transistors for high- speed

"switching and amplifier applications.
CASE 22
(TO·18)
2N2958 2N3115
2N2959 2N3116
MAXIMUM RATINGS
~~~;~~
2N311S
Rating Symbol 2N3ll6 Unit
(TO·S) (TO·1S)
Collector-Current IC 600 600 mAdc

25°C Case Temperature 3.0 1.8 watts
Derate above 25°C 20 12 mW/oC

25°C Ambient Temperature 0.6 0.4 watts
Derate above 25°C 4.00 2.67 mW/OC
2-391
2N2958, 2N2959, 2N3115, 2N3116 (Continued)
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted.

Collector Cutoff Current leBO )J. Adc
(VCS = 50 Vdc, IE = 0) --- 0.025
(V CS = 50 Vdc, IE = 0, TA = 150oC) --- IS
Collector Cutoff Current IcEX }J-Adc
(VCE = 30 Vdc, VSE = 0.5 Vdc) --- .050
Sase Cutoff Current ISL JoL-Adc
(VCE = 30 Vdc, VSE = 0.5 Vdc) --- .050
Collector-Sase Sreakdown Voltage SVCSO Vdc
(IC = 10 !lAdc, IE = 0) 60 ---
Collector-Emitter Sreakdown Voltage III SVCEO Vdc
(Ic = 10 mAde, pulsed, IS = 0) 20 ---
Emitter-Sase Sreakdown Voltage SV ESO Vdc
(IE = 10 !lAde, Ie = 0) 5.0 ---
Collector Saturation Voltage (1) VCE (sat) Vdc
(Ic = 150 mAdc, IS = 15 mAde) --- 0.5
Sase-Emitter Saturation Voltage (1J VSE (sat) Vdc
(IC = 150 mAde, IS = 15 mAdc) --- 1.3
(Ie = 150 mAde, 2N2958, 2N3115 40 120
VCE = 10 Vdc) 2N2959, 2N3116 100 300
Common-Sase Open Circuit OUtput Capacitance Cob pF
(VCS = 10 V, IE = 0, f = 100kHz) --- B.O
Delay Time td ns
(Vce = 30 V, ICS = 150 mA, lSI = 15 mA) --- 20
Rise Time tr ns
(VCC = 30 V, ICS = 150 mA, lSI = 15 mA) --- 75
Storage Time ts ns
(VCC = 6 V, les = 150 mA, lSI = 15 mAo --- 300
IS2 = 15 mA)
Fall Time ~ ns
(V CC = 6 V, les = 150 mA, lSI = 15 mA, --- 200
IS2 = 15 rnA)
Current Gain-Sandwidth Product iT MHz
(IC = 20 rnA, VCE = 20 V, f = 100MHz) 250 ---
f1I PULSE TEST: Pulse width ~ 300 /loS, duty cycle ~ 2%
2N2972thru 2N2979
2-392
2N3009 (SILICON)
2N3013
2N3013JAN AVAILABLE
2N3014 NPN silicon epitaxial switching transistors designed
for high-speed, medium-power saturated switching
applications
MAXIMUM RATINGS
CASE 27
(TO·52) Collector-Emitter Voltage- VCEO * Vdc
2N3009, 2N3013 15
2N3014 20
Collector-Base Voltage V CB 40 Ydc
Emitter-Base Voltage Y EB Vdc

2N3009 4,0
2N3013. 2N3014 5.0
(lOlls pulse) Peak 500
Total Device DiSSiPation@TA • 25'C PD 0.36 Watt
Total Device DiSSipation@T C • 25' C PD 1.20 Watts
@T C = 100'C 0.68 Watt
Derate above 2SoC 6.85 mW/'C
Operating and Storage Junction T J , Tstg -65 to +200 ·C
Temperature Range
* Applicable from 0.01 mA to 10 mA (Pulsed)
FIGURE 1 - TURN·ON AND TURN·OFF TIME TEST CIRCUIT

VBB
Rl TO SAMPLING
0•.1
I
V SCOPE
in /IF
Zin = 50 ~ ~t-3....""R",4-+-£..
Input Z '" 100 kn
SWITCHING TEST CIRCUIT VALUES INPUT PULb"'E

Type Test V. V BB VCC Rl R2 R3 R4 t t f Pulse Width
In r
2N3009 t on & toff (volts) (ohms) (nanoseconds)
2N30l3 11 -5.0 15 300 50 75 170 <1. 0 <1.0 >100
7.0 GND 2.0
2N3014 ton
toff -13 7.0 2.0
100 62 100 2.0 k <1.0 - >200
FIGURE 2 - CHARGE STORAGE TIME CONSTANT TEST CIRCUIT

o, L
-1o_, -
V in
0
• llL
F"A"
Vin l07..,...,t--+-..,.,,-+t..
890
_r----'w.--.--;Ir-'WI.~~)Vout
=-
OTO
"'--f"""-:-::;;;:l:::i at point "A"
Pulse Generator T V
To Oscilloscope S out
V. Rise Time = 1 ns
In 10 V Input Impedance = 50 n
Source Impedance = 50 n Rise Time == 1 ns
Vin Rise Time less than 1 ns PW == 300 ns Duty Cycle" 2%
2-393
2N3009, 2N3013, 2N3014 (continued)
ELECTRICAL CHARACTERISTICS (T A : 25" C uiliess otherwise Ilokd)

OFF CHARACTERISTICS
Collector-E mittel' Sustaining Voltage (11 Vdc
BV CEO(sus)
(I C c 10 mAde, IB c 0) 2N3009, 2N3013 15 -
2N3014 20
(IC c 100 pAde, V BE cO) 40

(IC c 100 jlAde, IE cO) 40 -
(IE c 100 pAde, IC cO) 2N3009 4,0
2N3013, 2N3014 5.0
Collector-Cutoff Current ICES jlAde
(V CE c 20 Vde, V BE cO) 2N3009 - 0.5
(V CE c 20 Vdc, V BE cO, TA = +85°C) 2N3009 - 15
(V CE c 20 Vde, V BE cO) 2N3013, 2N3014 - 0.3
(V CE c20Vde, V BE =0, TA = +125°C) 2N3013, 2N3014 - 40
Base Current IB /lAde

(V CE c 20 Vde, VBE c 0) 2N3009 - 0.5
2N3013, 2N3014 - 0.3
ON CHARACTERISTICS (1)
DC Current Gain hFE

(IC c 30 mAde, VCE cO. 4 Vde) All Types 30 120
{IC = 10 mAde, VCE =O. 4 Vde) 2N3014 25 -
(IC c 100 mAde, VCE c O. 5 Vde) 2N3009, 2N3013 25 -
(IC : 100 mAde, V CE = 1. 0 Vde) 2N3014 25 -
(IC = 300 mAde, VCE = 1. 0 Vde) 2N3009, 2N3013 15 -
(IC = 30 mAde, VCE cO. 4 Vde, TA = _55°C) 2N3013, 2N3014 12 -
(IC = 30 mAde, IB = 3.0 mAde) All Types - 0.18
(IC c 100 mAde, IB c 10 mAde) 2N3009, 2N3013 - 0.28
(IC c 100 mAde, IB = 10 mAde) 2N3014 - 0.35
(IC c 300 mAde, IB c 30 mAde) 2N3009, 2N3013 - 0.50
(IC = 10 mAde, IB = 1. 0 mAde) 2N3014 - 0.18
(IC = 30 mAde, IB = 3.0 mAde, T A = +85° C) 2N3009 - 0.30
(IC = 30 mAde, IB c 3.0 mAde, T A c +125°C) 2N3013, 2N3014 - 0.25
Base-Emitter Saturation Voltage' V BE(sat) Vde

(IC = 30 mAde, IB = 3.0 mAde) All Types 0.75 0.95
(lC c 100 mAde, IB = 10 mAde) All TYPeS - 1. 20
(IC c 300 mAde, IB = 30 mAde) 2N3009, 2N3013 - 1. 70
(I C = 10 mAde, IB c 1. 0 mAde) 2N3014 0.70 0.80
(IC c 30 mAde, VCE = 10 Vde, I = 100 MHz) 350 -
Cob
(V CB c 5.0 Vde, IE = 0, f c 140 kHz) - 5.0
Input Capacitance C 1b pF
(V BE c 0.5 Vde, IC = 0, Ie 140 kHz) - 8.0

on
(VEB(o!!) c 5.0 V, VCC c 15 V, IC c .300 mAde, IBI ~.30 mAde)
2N3009, 2N3013 - 15
(VEB(o!!) = 0, VCC c 2.0 V, IC c 30 mAde, IBI ~ 3. 0 mAde)
2N3014 - 16
(V CC c 15 V, IC c 300 mAde, IBI ~ IB2 ~30 mAde)
2N3009, 2N3013 - 25
(V CC c 2. 0 V, IC = 30 mAde, IBI ~ IB2 ~3. 0 mAde) 2N3014
- 25
Charge-Storage Time (Figure 2) t ns
s
(IC ~ IBI ~ IB2 ~ 10 mAde) - 18
(II Pulse Test: Pulse Width c 300 ps: Duty Cycle ~ 2%.
2-394
2N3010 (SILICON)
NPN silicon low-power transistor primarily de-

signed for high-speed, saturated switching applications.
CASE 22
(TO-18)
MAXIMUM RATINGS

Collector-Emitter Voltage* VCEO * 6.0 Vdc
Emitter-Base Voltage VEB 4_0 Vdc
Total Device Dissipation @T A = 25°C PD 0.30 Watt

stg
Temperature Range
* Applicable from 0.01 mAdc to 10 mAdc (Pulsed).
FIGURE 1 - TURN-ON AND TURN·OFF FIGURE 2 - CHARGE·STORAGE TIME

TIME TEST CIRCUIT TEST CIRCUIT
Vee = +1.0 V
+3.0 v
TO OSCILLOSCOPE
RTSE TIME < 1.0 ns
RISE TIME = 0.4 ns
50 INPUT Z 50n
0
OUTPUT Z = 50n
PULSE WIDTH"" 200 ns 50
~Vout
0.1 /.iF
+5.2 V
~
O. I MF
taff
TO OSCILLOSCOPE
V BB =+5.0V RISE TIME = O. 4 ns
V. = -4.0 V INPUT Z = 50n
m
RISE TIME < 1.0 ns

OUTPUT Z = 50n
PULSE WIDTH = 200 ns
2-395
2N3010 (continued)
ELECTRICAL CHARACTERISTICS (T, = 25'C ""$$ o'h, ... ,,, oo'eO)

OFF CHARACTERISTICS
Coll~ctor-Emitter
(I C ~10
Sustaining Voltagel1)
mAde, IB = 0)
BV CEO(sus)
. 6.0 -
Vdc

(IC = 10 /lAde, VBE = 0) 11 -
(IC = 10 /lAdc, IE" 0) 15 -
(IE = 10 /lAdc, IC " 0) 4.0 .
Collector Cutoff Current ICES /lAde
(V CE =11 Vde, VBE =0) - 10
(V CE = 5.0 Vdc, VBE = 0) - 0.1
(V CE " 5.0 Vde, VBE "0, T A " +85 0 C) - 5.0
Base Cutoff Current IBL /lAde

(V CE " 11 Vdc, VEB(off) = 0) - 10
ON CHARACTERISTICS 111
DC Current Gain" hFE -
(I C = 1.0 mAde, VCE = 0.4 Vdc) 15 -
(IC = 10 mAde, VCE = O. 4 Vde) 25 125
(IC = 30 mAde, VCE = 0.4 Vde) 15 .
(Ic " 1. 0 mAde, IB " 0.1 mAde) . 0.25
(IC = 10 mAde, IB = 1. 0 mAde) - 0.25
(IC = 30 mAde, IB = 3.0 mAde) - 0.38
(IC = 10 mAde, IB = 1. 0 mAde, T A = 85 0 C) - 0.4
Base-Emitter Saturation Voltage V . Vde

BE(sat)
(IC = 1. 0 mAde, IB = O. 1 mAde) 0.68 0.85
(IC = 10 mAde, IB " 1.0 mAde) 0.75 0.95
(Ic = 30 mAde, IB = 3.0 mAde) - 1.3
(I C = 10 mAde, VCE = 4.0 Vdc, f = 100 MHz) 600 -
(V CB = 5.0 Vde, IE = 0, f = 140 kHz) - 3.0

(V BE " O. 5 Vde, IC " 0, f = 140 kHz) - 2.0
Turn~On Time (Figure 1) t ns

on
(V CC "1.0 Vdc, VBE(off) = 1. 0 Vdc, IC ,,10 mAdc,
IBI = 2.0 mAde) - 12
Turn·Off Time (Figure 1) toff ns

(V CC = 1. 0 Vdc, IC = 10 mAdc, 1m = IB2 =1. 0 mAde) - 12
Charge Storage Time (Figure 2) t ns

s
(IC "IBI = lB2 " 5.0 mAde) - 6.0
01 Pulse Test: Pulse Length = 300 /lS; Duty Cycle ~ 2.0%.
2-396
2N30 11 (SILICON)
NPN silicon low-power transistor primarily de-

signed for high-speed, saturated switching applications.
CASE 22
(TO·1S)
ColI.ector connected to case
MAXIMUM RATINGS

Collector-Emitter Voltage* VCEO * 12 Vdc
Collector-Current-Continuous IC 200 mAdc

Peak (10 J.1.s Pulse) 500
Total Device Dissipation @ TA =25°C PD 0.36 Watt
De rate above 25°C 2.06 mW/oC
Total Device Dissipation @ T C =25°C PD 1. 20 Watt

T =100°C 0.68
C
Operating and Storage Junction T J' Tstg -65 to °c

Temperature Range +200
* Applicable from 0.01 rnA to 10 rnA (Pulsed)
FIGURE 1 - CHARGE·STORAGE TIME TEST CIRCUIT

"A" 890 0.1 /IF 1.0k
.1:=-U- Yin
56
500
V. Rise Time'" 1. 0 ns
10 +
Source Impedance = son ltV To Sampling Oscilloscope
Yin Rise Time less than 1. 0 ns '----..--...... ----I----....----~ Input Impedance =50n
Rise Time", 1. 0 ns
PW z 300 ns
Duty Cycle", 2. 0%
2-397
2N3011 (continued)
ELECTRICAL CHARACTERISTICS (TA = 2S"C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage 111 BVCEO(sus) Vde
(IC = 10 mAde, IB = 0) 12 -
(IC = 10 /lAde, VBE = 0) 30 -
(IC = 10 /lAde, IE = 0) 30 -
(IE = 100 /lAde, IC = 0) 5.0 -
Collector Cutoff Current ICES /lAde
(V CE = 20 Vde, VBE = 0) - 0.4
(V CE = 20 Vde, VBE = 0, T A = +85° C) - 10

(V CE =20Vde, VBE =0) - 0.4
ON CHARACTERISTICS 111
(IC = 10 mAde, VCE = 0.35 Vde) 30 120
(IC = 30 mAde, VCE = 0.4 Vde) 25 -
(IC = 100 mAde, VCE = 1. 0 Vde) 12 -
VCE(.at)
(IC = 10 mAde, IB = 1. 0 mAde) - 0.20
(IC = 30 mAde, IB = 3.0 mAde) - 0.25
(IC = 100 mAde, IB = 10 mAde) - 0.50
(IC = 10 mAde, IB = 1. 0 mAde, T A = +85°C) - 0.30

VBE(sat)
(IC = 10 mAdc, IB = 1. 0 mAdc) 0.72 0.87
(IC = 30 mAde, IB = 3. 0 mAde) - 1.15
(IC = 100 mAde, IB = 10 mAde) - 1. 60
(IC = 20 mAdc, VCE = 10 Vde, f = 100 MHz) 400 -
(V CB = 5.0 Vde, ~ = 0, f = 140 kHz) - 4.0

on
(V CC = 2.0 Vde, VEB(off) = 0, IC ~ 30 mAde, IBI ~ 3.0 mAde) - 15

(V CC = 2.0 Vde, IC = 30 mAdc, IBI ~ -I B2 ~ 3.0 mAde) - 20
Charge Storage Time (Figure 1) t ns

s
(IC = IBI ~ -IB2 ~ 10 mAde) - 13
111 Pulse Test: Pulse Length = 300 /lS, Duty Cycle ~ 2.0"6.

VCC a 2.0 V
100
2.0 k
I" To Oscilloscope
Rise Time < 1. 0 no
Input R ~ 100 k
Rise Time < 1. 0 no
Pulse Width > 200 no 100
Zin = 500
Ton: VBB Grounded Toff VBB =7.0V

Vln -7.0V Vln = -13 V
2-398
2N 30 12 (SILICON)
PNPSILICON
SWITCHING
TRANSISTOR
· .. designed for use in medium-speed saturated switch ing appl ications.

VCEO(sus) = 12Vdc@llc=10mAdc
!
VCE(sat) = 0.15 Vdc@lIC= 10 mAdc
017B 1 rno
0.209
OIA
r
*MAXIMUM RATINGS iU9S
DIA1[ L&f,o
I
Rating
Collector-Sase Voltage
Symbol
VeEO
Value
12
12
Unit
Vde
Vde
i 0.500
J
Ves
Emitter-Base Voltage VES 4.0 Vde
Collector Current - Continuous 200 mAde
&.m D"
Ie
Total Device Dissipation @TA = 25°C Po 0.36 Watts
Derate above 25°C 2.06 mWloe Pin 1. Emitter
2. Base
Total Device Dissipation @Te= 25°C Po 1.2 Watts a.Collector 0.100
Derate above 25°C 6.S5 wloe
Operating and Storage Junction TJ,Tstg -65 to +200 °e
Temperature Range
0.028
IIJRIj

CASE 22 (1)
TO-IS
*lndlc8te. JEOEC Registered Oate.
2-399
2N3012 (continued)
-ELECTRICAL CHARACTERISTICS IT A = 25 0 C unless otherwise noted)

I Characteristic Symbol Min· Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l) VCEO(sus) 12 - Vde
(lC = 10 mAde, IB = 0)
(Emitter-Base Termination - Open Base)
Collector-Emitter Breakdown Voltage BVCES 12 - Vde
(lC = lO"Ade, VBE = 0)
Collector-Base Braakdown Voltage BVCBO 12 - Vde
(lC = 10 "Ade, IE = 0)
Emitter-Base Braakdown Voltage BVEBO 4.0 - Vde
(IE = 100 "Ade, IC = 0)
(VCE = 6.0 Vde, VBE = 0) - 80 nAde
(VCE = 6.0 Vde, VBE = 0, T A = +850 C) - 5.0 "Ade
Base Current IB - 30 nAde
(VCE = 6.0 Vde, VBE = 0) -
ON CHARACTERISTICS
DC Currant Gain(l) hFE -
(lC = 10 mAde, VCE = 0.3 Vde) 25 -
(lC = 30 mAde, VCE =0.5 Vde) 30 120
(lr. = 100 mAde, VCE = 1.0 Vde) 20 -
Collector-Emittar Saturation Voltage(l) VCE(setl Vde
(lC = 10 mAde,lB = 1.0 mAde) - 0.15
(lC = 30 mAde,lB = 3.0 mAde) - 0.2
(I C = 30 mAde, I B = 3.0 mAde, T A = +850 C) - 0.4
(lC = 100 mAde, IB = 10 mAde) - 0.5
Base-Emitter Saturation Voltage(l) VBE(..t) Vde

(lC = 10 mAde,lB = 1.0 mAde) 0.78 0.98
(lC = 30 mAde,lB = 3.0 mAde) 0.85 1.2
(lC = 100 mAde, IB = 10 mAde) - 1.7
SMALL"SIGNAL CHARACTERISTICS
(VCB = 5.0 Vde, IE = 0, f = 140 kHz)
Input Capecitanee Cib - 6.0 pF
(VEB = 0.5 Vde, IC = 0, f = 140 kHz)
Small-Signal Current Gain hfe 4.0 - -
(lr. = 30 mAde, VCE = 10 Vde, f = 100 MHz)
SWITCHING CHARACTERISTICS (See Figure 1)
Turn-On Time (VCC = 2.0 Vde, IC",,30 mAde, IB1",,1.5 mAde) ton - 60 ns
Turn-Off Time (VCC= 2.0Vde, IC""30mAde, IBl = IB2",,1.5 mAde) toff - 75 ns
. Indicates JEDEC Registered Data.

(1)Pulse Test: P~lse Width ~ 300 "S, Duty Cycle = 1.0%.
VBB -2.0 V
Notes:
(1) Collector Current~30 rnA
62 (2) Turn On and Turn Off Base Currents ~1.5 rnA
Pulse Source
Rise Time < 1.0 ns 100 (3) ton VBB = +3.0 V Vln = -7.0 V
T-1-.. .
Vout toff VBB - -4.0 V Vln = +6.0 V
Pulse Width> 200 ns
Zin =50 Ohms
0.1
Vin 2.Vklr-+-r
_-'II o
To Sampling Scope
Input R;;. 100 k Ohms
":" Rise Time < 1.0 ns
2-400
2N3013
2N3014
2N30 15 (SILICON)

CASE 31
(T0·5)
MAXI MUM RATI NGS ITA = 25°C unless otherwise noted)
Collector-Emitter Voltage* VCEO* 30 Vdc
Total Device DisSipation @ T A ~ 25°C PD 800 mW


Operating and storage Junction TJ' Tstg -65 to+ 200 °c

Temperature Range
*Applicable from 1.0 rnA to 30 rnA (Pulsed)
2-401
2N3015 (continued)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage· BVCEO(sus)" Vde
(IC = 30 mAde, IB = 0) 30 -
(Ie = 100 I'Ade, IE = 0) 60 -
(IE = lOOI'Ade, Ie = 0) 5.0 -
Collector-Cutoff Current ICES /lAde
(VCE = 30 Vde, VBE = 0) - 0.2
Collector-Cutoff Current leBO /lAde

(VCB = 30 Vde, IE = 0, T A = 125°C) - 200
Base Leakage Current IBL pAde

(VCE = 30 Vdc, V BE = 0) - 0.2
ON CHARACTERISTICS
DC Current Gain·
hFE*
30 120
-
(IC = 300 mAde. VCE = 0.7 Vde) 10 -
Collector-Emitter Saturation Voltage- VCE(sat)" Vde
(lC = 150 mAde, IB = 15 mAde) - 0.4
(IC = 500 mAde, IB = 50 mAde) - 1.0
Base-Emitter Saturation Voltage. VBE(sat)" Vde

(IC = 150 mAde, IB = 15 mAde) - 1.2
(IC = 500 mAde, ~B = 50 mAde) - 1.6
(VCB = 10 Vde,IE = 0, f = 140 kHz) - 8.0

(VCC = 25 Vde, IC ~ 300 mAde, IBI ~ 30 mAde) - 40
(VCC = 25 Vde, IC ~ 500 mAde, IBl ~ 50 mAde) - 40
Turn-Off Time (Figure 2) Ioff ns

(VCC = 25 Vde, IC = 300 mAde, IBI = IB2 = 30 mAde) - 60
(VCC = 25 Vde, IC ~ 500 mAde, IBl = IB2 = 50 mAde) - 60
·Pulse Test: Pulse Width = 300 Jlsi Duty Cycle 1£ 2%
FIGURE 1- TURN·ON TIME TEST CIRCUIT FIGURE 2- TURN·OFF TIME TEST CIRCUIT
+25 V v.. +25V
R, R,
100Q
200 ns
:"~
°LJTOQ
200Q V" .051'F 200Q
< t, 2ns t,< Ins t, < Ins
R" "" 100 kQ R" "" 100 kQ
5011
200 ns
tr<2ns -=-
Ie V" R, Ie ViII V.. R,
rnA Volts ohms rnA Volts Volts ohms
300 7.0 80 300 -13 10 80

500 11 48 500 -21 16 48
2-402
2N30 19 (SILICON)
2N3020

current, high-frequency amplifier applications.
CASE 31
(TO·S)
MAXIMUM RATINGS
Collector Current IC l.0 Adc
Total Device Dissipation @ T A = 25°C PD 0.8 W

Total Device Dissipation @ TC = 25°C PD 5.0 W

2-403
ELECTRICAL CHARACTERISTICS (At 2SoC unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage \11 BVCEO Vde
(Ic = 30 mAde, IB = 0) 80 -
(IC = 100 IlAde, IE = 0) 140 -
Emitter-B~se Breakdown Voltage BV EBO Vde
(IE = 100 IlAde, IC = 0) 7.0 -
Collector Cutoff Current ICBO IlAde
(VCB = 90 Vde, IE = 0) - 0.010
(VCB = 90 Vde, IE = 0, T A = 150"C) - 10
Emitter Cutoff Current lEBO IlAde

(V BE = 5 Vde, IC = 0) - 0.010
ON CHARACTERISTICS
DC Current Gain \11 hFE -
(IC = 0.1 mAde, VCE = 10 Vde) 2N3019 50 -
2N3020 30 100
, (IC = 10 mAc, VeE = 10 Vde) 2N3019 90 -
2N3020 40 120
(IC = 150 mAde, VCE = HI. Vde) 2N3019 100 300
2N3020 40 120
(Ie = 150 mAde, VCE = 10 Vde, TC = -55"C) 2N3019 40 -
(IC = 500 mAde, VCE = 10 Vde) 2N3019
2N3020
50
30
-
100
(IC = 1 Adc, VCE = 10 Vde) Both Types 15 -
(IC = l50mAde, IB = 15 mAde) - 0.2
(IC = 500 mAde, IB = 50 mAde) - 0.5
Base-Emitter Saturation Voltage'{l1 Vde

VBE(sat)
(Ie = 150mAde, Is = 15 mAde) - 1.1
2N3020 80
(Vcs = 10 Vde, IE = 0, f = 1 MHz) - 12
(V BE = O. 5 Vde, IC = O. f = 1 MHz) - 60
Small-Signal Current Gain h fe -

(Ic = lmAde, VCE = 5 Vde, f = 1 kHz) 2N3019 80 400
2N3020 30 200
Collector-Base Time Constant r'C

ps
(I C = 10 mAde, V CE = 10 Vde, f = 4 MHz) be
- 400
Noise Figure NF dB
(IC = 100 IlAdc, VCE = 10 Vde, f = 1 kHz, RS =1 kohm) 2N3019 - 4.0
111 Pulse Test: Pulse Width ~ 300 IlS, duty cycle ~ 1%
2-404
CASE1~
~
(TO·3)
PNP silicon power transistors for Class C power ampli-
fiers, high-current core switching and high-speed switching
and amplifier applications.
MAXIMUM RATINGS
2N3021 2N3022 2N3023

Collector-Base Voltage VCB 30 45 60 Volts
Collector-Emitter Voltage VCEO 30 45 60 Volts
Emitter-Base Voltage VEB 4.0 Volts
Base Current IB 0.5 Amp
Power Dissipation PD 25 watts
Junction Operating Temperature Range TJ -65 to +175 OC
2-405
ELECTRICAL CHARACTERISTICS (At 25°C unless otherwise specified)
Characteristics SymbDI Min Mu Unit
Emitter-Base CutoU Current lEBO mAde
(VSE = 4 Vdc) - 1.0
Collector-Emitter Cutoff Current IcEX mAde
---
(VCE = 25 Vdc, VSE = 2 Vdc) 2N3021, 2N3024 0.2
(VCE = 40 Vdc, VSE = 2 Vdc) 2N3022, 2N3025 0.2
(VCE = 54 Vdc, VSE = 2 Vdc) 2N3023, 2N3026 0.2
--
(VCE = IS Vdc, VSE = 2 Vdc, TC = 150°C) 2N3021, 2N3024 2.0
(VCE = 25 Vdc, VSE = 2 Vdc, TC = 150°C) 2N3022, 2N3025 2.0
(VCE = 35 Vde, VSE = 2 Vde, TC = 150°C) 2N3023, 2N3026 - 2;0
Collector-Emitter Breakdown Voltage- Vde
--
BVCEO• 30
(IC = 100 mAde, IS = 0) 2N3021, 2N3024
(Ie = 50 mAde, IS = 0) 2N3022, 2N3025 45
(IC = 20 mAde, IS = 0) 2N3023, 2N3026 60 -
DC Current Gain
(IC = 1.0 Adc, VCE = 2 Vde) 2N3021, 2N3022, 2N3023
hFE
20 60
-
2N3024, 2N3025, 2N3026 50 180
Co!1e~tor-Emitter Saturation Voltage Vde

VCE (sat)
(Ie = 3 Ade, IS = 0.3 Ade) 2N3021, 2N3022, 2N3023 - 1.5
2N3024, 2N3025, 2N3026 - 1.0
Base-Emitter Saturation Voltage VBE (sat) Vde

(Ie = 3 Ade, IS = 0.3 Ade) - 1.5
Small Signal Current Gain hte -

(Ic = 0.5 Ade, VCE = IS Vde, ! = 30 MHz) 2.0 -
--
Swttchlng Times td +tr 100 n.
(Ic = 1 Ade, lSI = IS2 = 100 mAde) t. 3415
It - 75
·Perform tests USing sweep method to prevent heating.
~
e
!
~
1'--.
5
POWER· TEMPERATURE DERATING CURVE ~ .........
~
t'-..,
......
mESE TRANSISTORS ARE ALSO SUBIECTTO SAFE AREA CURVES AS
~B~k'it~ BOrn LIMITS ARE APPLICABLE AND MUST BE
i.t 5 r-..........
0
25 75 125
~ 115
TCO CASE TEMPERATURE fOe)

2N3021, 2N3024 2N3022, 2N3025 2N3023, 2N3026
10
t~O ,,5
50,,5 50,,5
1'1
I"\, 1,\
i"".
" r-... ...... "- l"'\.
=> ~ "1"\ 1\
Ii: \
5 $ ~ 5 5
::E
5
.... OC'-
~ 1\1\' DCI DCP- ~ ~ \}
...
~
::>
1.0
5ms = 5 ms 10= 5ms
<>
:= 5001'1
~ - 500,,5
~ ~
~ 5001'1'
~
I
~<>
~ 0.1
BVcso @ Ie "
=100 mA:...;
.\
~N
1\ ~
......
~
\
\
\
- r- BVe,o @ Ie 50 mA
I I
BV"", @ Ie = 20 mA I-"
.01
10 20 30 0 10 20 30 40 50 10 20 30 40 50 60
Vee, COLLECTOR EMITTER VOLTAGE (VOLTS)
Tn~~~~e~P~fa:!r;:pe~~~~r~~-:3sd:~~i~~':le~Cth~~Ec~i~!~S ct:~o; =dha!hfo:Be~~etSh::~:r~~~!!~r ~~~~:~Yc=krsO~ ~:k!~e I~~!e c~:f~!~r;.~i::= ~::a~: are
operation below the maximum junction temperature.
2-406
BASE·EMITTER SATURATION VOLTAGE VARIATIONS
1.4
~
--- -- - :;::.::--
0
~
w
co 1.2
~ -----..",..-
§;!
z
~. .-.- ie = 3 A
- ~
-- -- --
0
~
1.0
-
ie - I A
f----
~ ie = 0.3 A
or 0.8
~
~ ~ f-- - I - f--
r- -----
.
~
IX) 0.6 _f--
- 40°C
,;
1 -- 2Soc
-'1 ISOOC
0.4
,
10 20 40 60 80 100 200 400 600 700
i •• BASt CURRENT (rnA)
i 1.4
COLLECTOR·EMITTER SATURATION VOLTAGE VARIATIONS. 2N3021 thru 2N3023
I I I Ii I
w
~
1.2
I I
\ I
l , _J_
I
I
40 oC
~
is
~
1.0
! I
I : , , 2SOC
-·-ISOOC
=>
~
or
~
0.8
0.6
,
I
\ I
I
1
I
I
I
\ r--I'~ ..
I
:E
"I
or 0.4
I f\ \
8~
-r-
r--. \ ~ ~ ..... ie ,3, A
-- "--- "'"' -- ----

0.2
o
-
- -10-
ie - 0.3 A
ie I AI
1 8 10 20 40 60 80 IDa 200 400 600 800 1000
,
i•• BASE CURRENT (rnA)
COLLECTOR·EMITTER SATURATION VOLTAGE VARIATIONS 2N3024 thru 2N3026
~
~
1.4
1\ ,
I
1\
w
~
1.2
\ , 1\ I' \
g 1.0
, , I
- - -40°C-
is
i \\ ~ ,
\
I'
\ - 2SoC
=>
~
0.8
\ \
, \
\
I'
l~,
\ _.- ISOoC,_
"
0.6
,,~ --...::s"
'"' 0.4 '.\ I ... "'"""
I
1-1;'
r-t -
O. 2
""- ~~ " ~ ....I"'- -i- ic,=H
0
--- -- --= ie= 0.3 A
---- ie l~ Jl
4 8 10 20 40 60 80 100 200 400 600 800 1000
1•• BASE CURRENT (rnA)
BASE CURRENT - VOLTAGE VARIATIONS COllECTOR CURRENT YS BASE·EMITTER VOLTAGE
100 10
60 6
40 4
in
0 / / / !i 2 A. ~
~ I0
Vet =2 V / VI 5-
I
Ve• = 2 V ",/ L
is
6 : 0.6
4 ~ 0.4
or
/ I t; O. 2 I /
I
ISOoC / 25°C J -40°C ~
is o. I ISOOC/ 2SoC/ /-40 C o
'-'
O. 6 ~ .06
O.4
0.2
O. I
0.2
,
0.4 0.6 0.8 1.0 1.2 1.4
.04
.02
.0 I
0.2
II J
I
1.0 1.2 1.4

0.4 0.6 0.8
V... BASE·EMmER VOLTAGE (VOLTS) V... BASE·EMmERVOLTAGE (VOLTS)
2-407
CURRENT GAIN VARIATIONS, 2N3021 thni 2N3023

70
60
150'C
--
z
i.... 50
~ Veo = 2 V
---- ~
!ij 25'C
..,='" 40
j
-40'C
r---
30
20
- r---
0.1 0.2 0.4 0.6 0.8
.Ie, COLLECTOR CURRENT (AMp)
CURRENT GAIN VARIATIONS, 2N3024 thru 2N3026
--
16O'
.150'C
" "" "-

140
vee';' 2 V
120
z
--
25'C
i 100
... ..
I
'
-4O'C ~
.., 80
-.......
~.'"
~
t---
60
40
20
0.1 0.2 0.4
'.
0.6 0.8
--- ~"'
2 4
Ie, COLLECTOR CURRENT (AMP)
RISE TIME FACTOR ACTIVE REGION TIME CONSTANT

2.0 ,I. I I I I 1.11 0
\ RISE TIME 10 - 90%) t, = R TAC,' 8\
i fl. = h" AT EOGE OF SATURATI N
fl. ='Ie IN SATURATION II" IBASE "ON" CURRENT)
::.•
1.8 6
0
~
\ \
ITJ =2S9C
:i
~ 1.6
\ 4
2
\
)
0
~
'"
\ 0
\ /
I\.Vcc =30V V
0
t;
...~ 1.4 \ 8
:E
t\. "'\
...
;:: 6
.. ...... ..... ~~
""
'" I'.,..vcc:"'3V
* 1.2
.....:. ""t- ....

1"-1"-
1.0 o
1 10 20 0.1 .0.4 0.6 0.8 1 3
SWITCHING. nME EQUATIONS

Using charge control theory and data given with this transistor, switching times for a wide variety of conditions
can be' readily computed.
2-,408
JUNCTION CAPACITANCE VARIATIONS

1000
800
60 0 ....
~ COb TJ - 25°C
~40
0,
..........
S
<.>
......
.........
5is 200
~
~ 100
80
60
40
" r-.....!'-,
'" .......
0.1 0.2 0.4 0.6 4 6 8 10 20 40
REVERSE JUNCTION VOLTAGE (VOLTS)
TURN-ON TIME TEST CONDITIONS

V,. ADJUSTED TO I" USING CURRENT PROBE. 12 V OUTPUT PULSE
I, OF INPUT < 10 ns SCOPE < 5 ns
I" = 100 mA
INPUT PULSE
12 II
+
V,. 0--_----
Vo• = - II V>--W",",--li Ie 0 --+--'li-+-----
,~
TURN·OFF TIME TEST CONDITIONS I, IS MEASURED FROM 10% POINT OF V"
INPUT PULSE Vo• ADJUSTED TO 10 USING

CURRENT PROBE. T, 10 ns < OUTPUT PULSE
PULSE WIDTH> 10 ~.
+9V 12n
10= 100mA
+
v,. o---~y.--- 10
V" ~ + 9 V > - - V V ' - _.....

Ie O--+----I~II_--
-UV I.
I,
+3V
t. IS M,EASURED FROM 90% POINT OF V"
2-409
Dual NPN silicon annular transistors designed for

low-level, low -noise differential amplifier applications.
Can be used in complementary circuits with 2N3049,
CASE 610-02 2N3050, for metal can see 2N2639-2N2644 series.
1 2 4 5
NPN NPN

MAXIMUM RATINGS (each side) (TA~250Cunle5Sotherwisenoted)


Operating and Storage Junction ·C

TJ , Tstg -65 to +200
Temperature Range
One Both
Side Sides
Total Device Dissipation @ T A =25'C PD 250 350 mW
Derate above 25'C 1. 43 2.0 mW/"C
Total Device Dissipation @ TC =25'C PD 700 1400 mW

Derate above 25'C 4.0 8.0 mW/'C
2-410
ELECTRICAL CHARACTERISTICS (each side) (T A = 250C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage III BVCEO(sus) Vde
(lc • 10 mAde, ~ = 0) 45 -
(IE = 10 iLAde, IC = 0) 5.0 -
Collector Cutoff Current ICBO /tAde
(VCB = 45 Vde, IE = 0) - 0.010
(VCB = 45 Vde, IE = 0, T A = +150·C) - 10
Emitter-Base Cutoll Current lEBO /tAde
(VEB = 4 Vde, Ic = 0) - 0.010
ON CHARACTERISTICS
DC Current Gain" (1)
(lC = 10 /tAde, VCE = 5 Vde) aN3043, aN3044, aN3045
hFE
100 300
-
aN3046, aN3047, aN3048 50 aoo
(IC = 1 mAde, VCE = 5 Vdc) 2N3043, aN3044, 2N3045 130 -

2N3046, aN3047, 2N3048 65 -
(lC = 10 mAde, IB = 0.5 mAde) - 1.0

(lC = 10 mAde, VCE = 5 Vdc) 0.6 0.8
(lC = 1 mAde, VCE = 5 Vdc, I = 20 MHz) 30 -
(VCB • 5 Vde, IE = 0, I = 1 MHz) - 8.0
Input Impedance hie Ohms
(lC = 1 mAde, VCE = 5 Vdc, 1=1 kHz) 2N3043, 2N3044, aN3045 3.2k 19k
2N3046, 2N3047, 2N3048 1. 6k 13k

(Ii: = 1 mAde, VCE = 5 Vdc, 1= 1 kHz) 2N3043, 2N3044, aN3045
hie
130 600
-
2N3046, aN3047, aN3048 65 400
Output Admittance h J.lmhos
--
aN3043, 2N3044, 2N3045 oe 100
(IC = 1 mAde, VCE = 5 Vde, 1= 1 kHz)
2N3046, 2N3047, aN3048 70
Noise Figure NF dB
(IC = 10 J.lAde, VCE = 5 Vdc,
R" = 10k ohms, Bandwidth = 10 Hz to 15.7 kHz) - 5.0
DC Current GaIn Ratio" hFEl/hFEa** -
(Ie = 10J.lAde, VCE = 5 Vde) 2N3043, 2N3046 0.9 1.0
aN3044, 2N3047 0.8 1.0
Base Voltage Dlflerenttal IVBEI - VBE2 1 mVdc

(lC • I0J.lAde, VCE = 5 Vde) aN3043, 2N3046 - 5.0
2N30«, aN3047 - 10
Base Voltage Dlflerentlal Temperature Gradient A(vBEI - vBE:J J.lV;oC

(IC = 10 /tAde, VCE = 5 Vde, T A • -55 to +125·C) 2N3043, 2N3046
2N3044, 2N3047 ATA -- 10
20
(11Pulse Test: Pulse Width. 300 J.lS; Duty Cycle ~ a%

"The lowest hFE reading is taken as hFEI lor this test.
2-411
2N 3053 (SILICON)
NPN silicon annular transistor designed for medium-

current switching and amplifier applications,
MAXIMUM RATINGS


CASE 31 Emitter-Base Voltage VEB 5.0 Vdc
(TO-S)
Collector Current-Continuous Ie ·700 mAdc
Total Device Dissipation @ TC = 25 0 C Po 5.0 Watts

Operating Junction Temperature Range TJ 200 DC
ELECTRICAL CHARACTERISnCS CT. = 25'C "0'... _ .. _)

OFF CHARACTERISTICS
<Ie = 100 I'Ade, IE = 0) 40 -
<Ie • 100 mAde, RBE • 10 obma) 50 -
Collector-Bue Breakdown Voltage BVCBO Vdc
(Ie = 100 I'Ade, IE· 0) 80 -
Emltter-Bue Breakdown Voltage BVEBO Vdc
(IE· 100 I'Ade, Ie = 0) 5.0 -
Collector Cutoff Current 'cEX I'Ade
(VCE = 80 Vdc, VEB(oIr} = 1.5 Vde) - 0.25
Bue Cutoff Current IBL I'Adc

(VCE • 80 Vdc, VEB(oIr) = 1.5 Vdc) - 0.25
ON CHARACTERISTICS
DC Current Gain
<Ie. 150 mAde, VCE = 2.5 Vdc)
bFE
25 - -
<Ie. 150 mAde, VCE' 10 Vde) 111 50 250

Uc = 150 mAde, IB = 15 mAde) - 1.4

<Ie. 150. mAde, IB = 15 mAde) VBE(sat)
- 1.7
Bue-Emitter On Voltage Vdc

(Ie = 150 mAde, VCE • 2.5 Vde) VBE(on)
- 1.7
Current-Gain-Bandwldib Product
(IC • 50 mAde, VCE • 10 Vdc, f . 20 MHz)
Output Capacitance
fT
100 - MHz
pF
Cob
(VCB = 10 Vdc, IE • 0, f = 140 kHz) - 15
lDput Capacitance Cib pF

(VBE • 0.5 Vdc, Ie • 0, f = 140 kHz) - 80
11 "Pulse Te.t: Pulse Wldib = 300 I's, Duty Cycle = 2%
2-412
2N30S4A (SILICON)
MEDIUM-POWER NPN SILICON TRANSISTOR

4AMPERE
· .. designed for general purpose switching and amplifier applications. POWER TRANSISTOR
NPN SILICON
• Aluminum TO·66 Package for Better Power Handling Capability -
75 Watts@Tc = 250 C 55 VOLTS
75 WATTS
• Excellent Safe Operating Area
• DC Current Gain Specified to 3.0 Amperes
• Complement to PNP Type 2N6049
MAXIMUM RATINGS
Collector-Emitter Voltage VeEO 55 Vdc
Collector-Emitter Voltage VeER 60 Vdc
(RBE = 100 n)
Collector-Base Voltage VeB 90 Vdc
Collector Current - Continuous Ie 4.0 Adc
Peak 10
Total Device Dissipation @ T C = 25°C Po 75 Watts
Derate above 2SoC 0.43 w/oe
Operating and Storag~ Junction, T J. Tstg -65 to +200 °e

Temperature Range
·Indicates JEOEC Registered Data H 0.500

IC470 0.050
rum
THERMAL CHARACTERISTICS _L ·1F:~:'1_hl~~5~

Characteristic
Thermal Resistance, Junction to Case -t-
0.250 -
0.D28
0 034 OIA
1
1l.J40
0.360
MIN
0.093
FIGURE 1 - POWER·TEMPERATURE DERATING [fOj
80
r-- t
70
""" I
~
~
z
0
~
ili
60
50
40
'" "'" .........
PIN 1. BASE
1. EMITTER
i5
'"w 30 " r--... All JEOEC dimensions and notes apply
~ Collector connected to case
"'" '"
20
~
10 CASE 80·02
o ~ TO·66
o 20 40 60 80 100 120 140 160 180 200
TC. CASE TEMPERATURE (DC)
2-413
2N3054A (continued)
ELECTRICAL CHARACTERISTICS ITC = 25° unless otherwise noted I

*OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1) VCEOlsusl Vde
{lC = 100 mAde, IS = 01 55 -
Collector-E mitter Sustaining Voltage (1) VCERlsusl Vde

{lC = 100 mAde, RSE = 100 nl 60 -
Collector Cutoff Current ICEO !LAde
IVCE = 30 Vde, IB = 01 500
IVCE = 90 Vde, VSE 10111 = 1.5 Vdel - 1.0
IVCE = 90 Vde, VSElolI1 = 1.5 Vde, TC = 1500 CI - 6.0
IVSE = 7,0 Vde, IC = 01 - 1.0
*ON CHARACTERISTICS III

IIC = 0.5 Ade, VCE ~ 4.0 Vdel 25 100
{lC = 3.0 Ade. VCE = 4.0 Vdel 5.0 -
Collector-Emitter Saturation Voltage VCE Isatl Vde
{lc = 500 mAde. IS = 50 mAde I - 1.0
IIC =3.0 Ade, I B = 1.0 Adel - 6.0
Base-Emitter On Voltage VBElonl Vde
IIC = 500 mAde, VCE = 4.0 Vdel - 1.7
IIC = 200 mAde, VCE = 10 Vdcl 3.0 -
*Small-Signal Current Gain hie -
(lc = 100 mAde, VCE = 4.0 Vde, I = 1.0 kHzl 25 180
*Common-Emitter Cutoff Frequency Ihle kHz
IIC = 100 mAde, VCE = 4.0 Vdel 30 .-
*Indicates JEDEC Registered Data

(1) Pulse test: Pulse Width <300 /J.s, Duty Cycle ~2.0%
FIGURE 2 - SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 3 - TURN·ON TIME

3.0
APPROXnTURN.ON
PULSE
VCC o--~wv--..,
2. 0 I II
IM~\o
+11 V I
....... IJ
SCOPE
Yin II RK 1.0 TJ 25 0 C
Cjd« Ceb If @VCC 30 Vdc

VBEloffl ,: -;;; O. 5Sr-. ;;-
.3
Ii -4.0 V
APPROX "' O. 3 - If@VCC 10 Vdc
+11 V
13 t1 < 15 os
100<12 < 500 '"
'"
;::
O. 2_
Yin -1--
-l
I
I
--I
I
I
I
I...
APPROX 9.0 V
13 < 15 ns
DUTY CYCLE ~ 2.0%

O. 1
0.0 5
--- Id@ VBEloff) ~ 0
12 ~ 0.0 3
TURN·OFF PULSE 0.04 0.06 0.1 0,2 0.4 0.6 1.0 2.0 4.0
IC. COLLECTOR CURRENT IAMPI
2-414
2N3054A (continued)
1. 0
!z o.I~D=0.5
~ o. 5
z
~w O. 31--0.12
1-'-'
wZ
......
5~ o. 2
~~
... or
w -'
.11:::::==0.05
0.1 ~
-- "'t:;:::1""
"
8JCIt! = rlt! 8JC Plpk)
- fJUl
ffi~ 0.0 IF-0.02 8JC = 2.330 CIW MAX
~ffi 0.05
D CURVES APPLY FOR POWER
i i= 0.0 31-'" .......r<.

l""-
0.01
I I
PULSE TRAIN SHOWN
READ TIME AT., -t~ j DUTY
CYCLE.
~rrmrE
~ 0.0 2 TJlpk) - TC = Plpk) 8JCII) 12 0 =.,/12
0.0 1 I II III 11111

0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 3D 50 100 200 300 500 1000
t. TIME or PULSE WIDTH Ims)
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
10
I. 0 5.0ms~ ~1.0ms~0.5~
~ 5. 0
~ ~
, There are two limitations on the power handling ability of a
~ 3. 0 TJ 2000 C "- transistor: average junction temperature and second breakdown.
D: 2. 0 Safe operating area curves indicate Ie - VeE limits of the tran-
13 r-- SECONO BREAKOOWN LIMITED -"\ sistor that must be observed for reliable operation; i.e., the transistor
~ 1. 01::::::
----BONDINGWIRELIMITEO I 1\ must not be subjected to greater dissipation than the curves indicate.
- - - THERMAL LlMITATION@ Te - 25 0 C T~.d8ta of Figure 5 is based on TJ(pk) = 2000 C; TC is veriable
~ O.
If--
Curves ApplV Below Rated VCEO
depending on conditions. Second breakdown pulse limits are valid
o O. 5 for duty cycles to 10% provided T J(pk) <200°C. T J(pk) may be
'-'
!:2 0.3
d~",\ calculated from the data in Figure 4. At high case temperatures,
thermal limitations -will redu.ce the power that can be handled to
0.2 values less than the limitations imposed by second breakdow.n.
ISee AN-41S).
O. 1
2.0 3.0 5.0 1.0 10 20 30 40 50 60
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
FIGURE 6 - TURN-OFF TIME FIGURE 7 - CAPACITANCE

3.0 300
2.0
I IB1=IB2_
c- o-
II TJ = 2'5 0 t III
-
Ic/lB = 10
200
Is -; t- ITJ = 250 C
1. 0
~
@VCC - 30 Vdc
O. 5"'" If
.I
w
'-'
r-- r-..
z
w
::;;
i=
-"
0.3
0.2 \
If@VCC.- 10 Vdc
" ;:: 100
U
~ 70
........
Cib
U
O. 1 ..........
50
Cob
0.05
0.03 30
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100
IC. COLLECTOR CURRENT lAMP) VR. REVERSE VOLTAGE IVOLTS)
2-415
2N3054A (continued)
FIGURE 8 - DC CURRENT GAIN FIGURE 9 - COLLECTOR SATURATION REGION

300 _ 1.0
TJ = 150°C VCE = 4.0 Vdc ~ I III I 1
~ 100
'"~
200
70
25°C
I -- c
>
~
'"'"
"
c
~ 0.6
0.8
Ic=100mA 500 mA LOA 3.0 A
\
\
~ 50 I..--- "\. t:
f\.
..,..,c ~
:> f'..
0.4
"\. .\.
-
30 c
g
~ 20
~ --- -....., "' _ 0.2 \
\ f--
" 8 TJ = 25°C
10
V
I ~
> 0
5.0 10 20 50 100 200
liT
500 1000
0.004 0.Q1 0.02 0.04 0.1 0.2 0.4 1.0 2.0 4.0 1.0 2.0
IC. COLLECTOR CURRENT (AMP) lB. BASE CURRENT ImA)
FIGURE 10 - TEMPERATURE COEFFICIENTS FIGURE 11 - "ON" VOLTAGES
~ +2.0
+2.5
"APPLIES FOR Ic/IB" hFE/1 IIIII 1.0
TJ = 15°C V
7'
:;;
.§ +1.5
IIIII 0.8
"eVC FOR VCElsat) V --I---
'"ffi VBElsat)I@le/IB= 10 .......
~
+1.0
~ +0.5
250Cto 11500~ I IIII .-/" 0
~
0.6 '-
w
1tn:250C- -
8 to
« /
~
:>
>-
~ -1.0
-0.5
II! / "
0
>
>'
0.4
/
I~ 7
m~~
~ -,1.5 0.1
-55 to 150°C
>-. -1.0 VCElsat)@ICIlB 10
>
<x:> -2.5 IIII III 0
0.004 0.Q1 0.02 0.04 0.1 0.2 0.4 1.0 1.0 4.0
0.004 0.01 0.02 0.04 0.1 0.1 0.4 1.0 1.0 4.0
IC. COLLECTOR CURRENT lAMP) IC. COLLECTOR CURRENT lAMP)
FIGURE 12 - COLLECTOR CUT·OFF REGION FIGURE 13 - EFFECTS OF BASE·EMITTER RESISTANCE

103 7
f--VCE 30 V ), ...... IC = 10 ICES-

2
f:=T J - 150~C ./ "
1
5
I--VCE = 30 Vdc f'..
" 1":
[7
-" IC = 21CES f,--
F== ~1000C f "- ""'< "-

IC ~ICES
1~ I::: REVERSE FORWARO= ~ ~TYPICAL ICES
......
f--VALUES OBTAINED
I==FROM FIGURE 11 " " 1'-.
1== F=250C
10-3
ICES
102 "
-0.4 -0.3 -0.1 -0.1 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
~ 0 10 40 60 BO 100 120 140 160 180 200
VBE. BASE·EMITTER VOLTAGE IVOLTS) TJ. JUNCTION TEMPERATURE 1°C)
2-416
2N3055 (SILICON)
NPN SILICON POWER TRANSISTOR 15 AMPERE

POWER TRANSISTOR
NPN SILICON
· .. designed for general-purpose, moderate speed, switching and
amplifier applications. 60 VOLTS
115 WATTS
• DC Current Gain -
hFE =20-70@ IC =4.0 Adc
• Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 Vdc (Max) @ IC =4.0 Adc
• Excellent Safe Operating Area
-MAXIMUM RATINGS
Rating Symbol Volua Unit
*Collector-Emltter Voltage VCEO 60 Vde

Collector-Emitter Voltage VCER 70 Vde
Collector-Base Voltage VCB 100 vae
Collector Current Continuous IC 16 AIle
Base Current Continuous IB 7.0 AIle
Total Dwice Dlsslpatlon@Tc=26o C Po 116 Watts
Derate above 260 C 0.667 WJOC
Oparating and Storage Junction TJ,Tstg ..Q; to +200 °c
Temperatura Range
Cheracterlstlc
Thermal Raslstance, Junction to Case
'Motorola guarantees this value In addition to JEDEC Registered Data.

140
120
g I--
f'-..
~loo
..
z
~ 80
~
~ 60
"""" ..........
'"
I 40
"-
~ 20 """" I'-...
0 ~
25 50 75 100 125 150 175 200 CASE 11
(TO-3)
TC. CASE TEMPERATURE ('CI
Safe Area Limits are Indicated by Figure 9. 80th limits are applicable and mul't be observed. Collector Connected to Ca.
2-417
2N3055 (continued)
*ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)

OFF CHARACTERISTICS
Coliector·Emitter Sustaining Voltage (Note 11 VCEO(susl 60 - Vdc
(lC = 200 mAdc, IB = 01
Coliector·Emitter Breakdown Voltage (Note 11 BVCER 70 - Vdc
(lC = 200 mAdc, RBE = 100 Ohmsl
Coliector·Emitter Current ICEO - 0.7 mAdc
(VCE = 30 Vdc,IB = 01
Collector Cutoff Cu rrent ICEX mAdc
(VCE = 100 Vdc, VEB(offl = 1.5 Vdcl - 5.0
(V CE = 100 Vdc, VE B(off) = 1.5 Vdc, T C = 1500 CI - 30
Emitter·Base Cutoff Current lEBO - 5.0 mAdc
(VEB = 7.0 Vdc, IC = 01
ON CHARACTERISTICS
DC Current Gain (Note 11 hFE -
(lC = 4.0 Adc, VCE = 4.0 Vdcl 20 70
(lc = 10 Adc, VCE = 4.0 vdcl 5.0 -
Coliector·Emitter Saturation Voltage (Note 11 VCE(satl Vdc
(lC = 4.0 Adc, IB = 0.4 Adcl - 1.1
(lC = 10 Adc, IB = 3.3 Adcl - 8.0
Bas&-Emitter Voltage (Note 11 VBE - 1.8 Vdc
(lC = 4.0 Adc, VCE = 4.0 Vdcl
Small Signal Current Gain (Note 11 hfe 15 120 -
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHzl
Small Signal Current Gain Cutoff Frequency fae 10 - kHz
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHzl
Note 1: Pulse Wldth""300,,., Duty CycleS 2.0%.

-Indicates JEOEC Registered Data.
FIGURE 2 - BASE CURRENT·VOLTAGE VARIATIONS FIGURE 3 - COLLECTOR CURRENT·VOLTAGE VARIATIONS

1000 10
700
500 7.0
300 -'V "'" 5.0

-"L
200 I-- YCE = 2.0 Vd. V
/. '/
100
SEE NOTE 1
V 0::
...'"z
5
3.0
2.0 / iJ
~ 70 W
0: I VCP 2.0 Vd.
SEE NOTE 1.
50 0:
TJ= 17SoC
i5g::
.,'"
<> 25°C / !-400 C
'"
<>
30
II
/
' ,
I 0:
t;
1.0 I
~ 20 w
., 0.7
::l
~ TJ = IWCJ25 0 C/ '-40°C
10 <> 0.5
7.0
!} II I II
I II
5.0
3.0
, 0.3
0.2 I
I
2.0
1.0
o 0.4
I I
0.8 1.2 1.6 2.0
0.1
o
I I
0.4 0.8 1.2 1.6 2.0
V,~ BASE·EMITTER VOLTAGE (VOLTS) VIE, BASE·EMITTER VOLTAGE IVOLTSI
Note 1. Pulse Test: Pulse Width"" 200 "I, Duty Cycle "" 1.5%.
2-418
2N3055 (continued)
FIGURE 4 - COLLECTOR·EMITTER SATURATION VOLTAGE VARIATIONS

1.4 ,
1.2
,
I
\
\
\
,
1
['
" '\
,
\
.I
TJ 25°C
---- -40°C-
1.0 II
\I ,
\ 1\
\ \
'i., ---]WC
SEE NOTE 1
0.8 \ , 1
i"--
--.
I \ I
5.0 Adc ~
\ I
0.6
\ ,,\:i-- 1.,_ ........ ,
-
-
'. \
0.4
0.2
- "-~ \
~": --- - -
"- '" -- -- -
)
r 3.0 Adc
~ -- It 1.0 Adc
:i1 o
10 20 30 50 70 100 200 300 500 700 1000 2000
I,. BASE CURRENT (mAl
FIGURE 5 - BASE·EMITTER SATURATION VOLTAGE VARIATIONS
1.4
- --
- -- --
~\ 5.0 Adc -
1.2
-
1.0 - -- -- - --- -- - - - Il.[) 3.0 Adc
0.8
--- - -- -- - ;..;...
r-- = r---- - 1.0 Adc TJ ~ 25°C
----40°C-
0.6
- - - - - r--.... r-- - --IWC-
SEE NOTE 1 -
0.4
.-
1. 0.2
~
o
10 20 30 50 70 100 200 300 500 700 1000 2000
FIGURE 6 - COLLECTOR CURRENT versus FIGURE 7 - COLLECTOR CURRENT versus

BASE·EMITTER VOLTAGE BASE·EMITTER RESISTANCE
10 100
7.0
50
5.0 I 30
3.0 1 20
,/
I I ~ 10
2.0
~
~
~ 1.0
VCE - VCEO -20V
SEE NOT~ 1
1 / I 5.0
3.0
I
::>
'-'
0.7 2.0
:='" II
g
'-'
0.5 'l75°C ./
I
.!J
1.0
r:: TJ IWC
.!J 0.3 0.5
0.2 0.3 VCE ~ VCEO -20V
1IIIi~ENnl;~
I
TJ ~ 100°C ./ 0.2 100°C
REVERSE- !-+FORWARD
0.1 0.1
-0.6 -0.4 -0.2 0.2 0.4 1.0 10 100 1000 10,000 100,000
V", BASE·EMITTER VOLTAGE IVOLTS) R", EXTERNAL BASE-EMITTER RESISTANCE {OHMSI
2-419
2N3055 (continued)
FIGURE 8 - CURRENT GAIN VARIATIONS
-
125
TJ
I
~ 175"C
I
100 1--
-" +-- I--- -r--r--. hF_Ie-leae

E----
~
z ~ ~i I, ~ lese
~ 75 25"C
ffi L--- I - K VCE· 2.0 Vdc
~ I---
1-"1- ...........
t---
1 50
l..--- ~ ."-"'"
---
40"C
~ ..........
25
.::::::
~~t--
o
---
om 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 LO 2.0 3.0 5.0 7.0 10
Ie. COLLECTOR CURRENT (AMP)
FIGURE 9 - ACTIVE-REGION SAFE OPERATING AREA
20
-- - I---
ii: 10
t-- K" i'\ ~
~ 50",
t-
iii
~
~ 2.0 f--
5.0
3.0
TJ =200·C
250", -
500",_f-
lOms -- -.:-
<-
The Safe Operating Area Curves indicate I C~V CE limits below
which the device will not enter secondary breakdown. Collector
o'"
t;
~ 1.0
)
t=--I.
j-dC -
.1 ..
Secondary Breakdown limited
F _. _. Bonding Wire limited
\" "' load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic failure. To insure operation
below the maximum T J. power-temperature derating must be ob-
8 ~ - - - Thermal limitations Te = 25 0 C served for both steady state and pulse power conditions,
~ 0.5 Pulse Duty Cycle';; 10%
~ Applicable For Rated BVCEO "\
0.3
0.2
3.0 6.0 10 20 30 60
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 10 - TYPICAL SWITCHING TIMES
-"i 10-- TEST CIRCUIT
1.5
'I~ ',"-30'~VESHAPE IC = 5.0 Adc. 181 = IB2 = 0.5 Adc
f"" 150 Hz DUTY CYCLE"" 2.0%
+30 V
-g.ovLJ • I ATPOINTA
1.0 ~
-g.ov 1......""---1..-4.8,, I
0.7 ~
100
1- -Urns T -1 20
~ .... , ........
.
::l 0.5 ......... ....;. 1'-... t-
1.0W 1.0W
>=
'"z
;;
~
0.3
h;- ~~ - i.:-::
,.-
~f..:: 900
~ Hg RELAYS
100
0.2
0.1
Illill2 1
-=- -9.0 V 100
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 -4,0 V
IC. COLLECTOR CURRENT lAMP)
2-420
2N3072 (SILICON)
2N3073
PNP SILICON
PNP SILICON ANNULAR TRANSISTORS TRANSISTORS
. designed for medium·speed, industrial switching applications.
• Choice of Package and Power Ratings
t ~~
f
• Low Coliector·Emitter Saturation Voltage -
VCE(sat) = 0.25 Vdc (Max) @ IC = 50 mAdc o. j 315
0:335
0.240
f!I
• High Small,Signal Current Gain -
hfe = 180 (Max) @ IC = 10 mAdc 0'009J[
o:m
L Imii
L -nEAT1NG
C
0.500 0.016 PLANE
O.0l9 .
0.016
iJ]T9
*MAXIMUM RATINGS
STYLE 1
Rating Symbol 2N3072 2N3073 Unit Pin 1. Emitter
2. Base
Collector~Emitter Voltage VeEO 60 Vdc 3. Collector
Coliector·Sa.. Voltage Ves 60 Vdc
Emitter-Base Voltage VES 4.0 Vdc
Collector Current - Continuous Ie 500 mAde
Total Device Dissipation@TA=250e Po 800 360 mW
Derate above 25°C 4.56 2.06 mW/oe
Total Device Dissipation @Te=250e Po 3.0 1.2 Watts
Derate above 2SoC 17.1 6.85 mW/oe
Operating and Storage Junction TJ.Tstg -65 to +200 °e CASE 79(11
Temperature Range 2N3072
TO·39
"'Indicates JEQEC Registered Data.
1 ~r-
!
L
DlA
~UlA11
I *0
FIGURE 1 - TURN·ON AND TURN·OFF SWITCH I NG TIMES TEST CI RCUIT
+4.0 V
330
-30 V
30
68
!I
STYLE 1
Pin 1. Emitter
mUlA
4
j
0.500
0
PULSE GENERATOR 140 2. Base

TO SAMPLING
Vin~:U-
OSCILLOSCOPE J. Collector
0.100
500pF
tr,tf~6.0ns
0.028
tr<1.0ns ~
pw. 0.5", lin ;a. 0.1 Megohm
Zin=50n
2N3073 CASE 22( 11
TO·18
2-421
*ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted}

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) BVCEO 60 - Vde
(lC = 30 mAde, IB = 0)
(lC = 100/lAde, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 4_0 - Vde
(IE = 100/lAde, IC = 0)
(VCE = 30 Vde, VBE = 0) - 10 nAde
(VCE = 30 Vde, VBE = 0, TA = 1250 C) - 10 /lAde
(VEB = 4_0 Vde, IC = 0)
(VCE : 30 Vde, VBE : 0)
ON CHARACTERISTICS
DC Current Gainll) hFE -
(lC: 50 mAde, VCE : 1.0 Vde) 30 130
(lC: 50 mAde, VCE : 1.0 Vde, T A: -55 0 C) 12 -
(I C : 300 mAde, V CE : 2.0 Vde) 15
Collector-Emitter Saturation Voltage VCE(satl Vde

(lc = 50 mAde, IB = 2.5 mAde) - 0.25
(lc = 300 mAde, IB : 30 mAde) - 1.0
Base-Emitter Saturation Voltage VBE(satl Vde
(lc = 50 mAde, I B = 2.5 mAde) - 1.2
(lC: 300 mAde, IB: 30 mAdel - 2.0
Base-Emitter On Voltage VBE(on) - 1.2 Vde
(lC: 50 mAde, VCE: 1.0 Vde)
Current-Gain-Bandwidth Produet(2) fT 130 - MHz
(lC: 50 mAde, VCE = 20 Vde, f = 100 MHz)
(VCB = 10 Vde, IE : 0, f: 140 kHz)
I nput Impedance hie - 1.5 k ohms
(lC: 10 mAde, VCE = 10Vde,f= 1.0 kHz)
Voltage Feedback Ratio hre - 26 X 10-4
(lC= 10 mAde, VCE = 10Vde,f= 1.0kHz)
(lC: 10 mAde, VCE = 10 Vde, f : 1.0 kHz)
Output Admittance hoe - 1200 /lmhos
(IC: 10 mAde, VCE = 10 Vde, f : 1.0 kHz)
SWITCHING CHARACTERISTICS (Figur. 1)

Turn-On Time ton - 40 ns
(I C ",,300 mAde, 181",,30 mAde)
Turn-Off Time toff - 100 ns
(lC",,3oo mAde, IB1""IB2",,30 mAde)

(1)Pulse Test: Pulse Width = 300 Ils, Duty Cycle = 1.0%.
(2)fT is defined as the frequency at which lhfel extrapolates to unity.
2-422
2N 3081 (SIUCON)
· .. designed for medium-speed switching and general-purpose ampli- PNPSILICON

fication applications in industrial service.
TRANSISTOR
• High Collector-Base Breakdown Voltage -

BVCBO = 70 Vdc (Min) @ IC = 10 /LAdc
• Low Collector-Emitte'r Saturation Voltage -
*MAXIMUM RATINGS
Collector-Emitter Voltage VCEO 50 Vde
Collector-Ba.. Voltage VCB 70 Vde
Total Oeviee Dissipation@TA - 25°C Po 0.6 Watts
Total Device Dissipation@Tc-250C Po 2.0 Watts
·'ndicates JEOEC Registered Data.
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT

~l;~DlA~
O,305 D1A 0.240
Generator
VBB:+30V
1.0 k
itA"
Voo
(Adjust for
VBElolI):+1.0V
~ IN3731
(~
40
Vee: -7.0 V
O'~fF
I--
=·rm=tI
Qm
1.5
ilLJ
RiseTim ... l.0ns 1.0.F /
(<»-_--l~-..,.:...--I\Nv---+--+_lV") SeOPE
Input 1.Ok ~ Inputlmpedance>1.0k Pin 1. Base
2. Emitter
Capacitance" 5.0 pF 3. Collector
51 Rise Time "1.0 ns
- 15 1 r;:1.0""~
Input at
o~-j~~-~-
+15J,~ 4\~8~9
Point "A"
ltd, tr I Itsl tf I
~ ~ 0.004 [Q45
Output ~ O%:
I
:1
I I
I
CASE 3111)
TO-5
90% Collector Connected to Case
To convert inches to millimeters multiply by 25.4.
2-423
2N3081 (continued),

I ~haracteristic I Symbol Min Max Unit
OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage VCEO(sus) 50 - Vde
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Vliltage BVCBO 70 - Vde
(lC = 10 !LAde, IE = 0)
(IE = 100 !LAde, IC = 0)
Collector Cutoff Current ICEV - 10 nAde
(VCE = 35 Vde, VEB(off) = 0.5 Vde)
(VCB = 50 Vde, IE = 0) - 10 nAde
(VCB = 50 Vde, IE = 0, TA'= 150o C) - 10 !LAde
Emitter Cutoff Current lEBO - 100 nAde
(VEB = 5.0 Vde, IC = 0)
(VCE = 35 Vde, VEB(off) ~ 0.5 Vde)
ON CHARACTERISTICS
(lC = 150 mAde, VCE = O.~ Vde) 20 -
(lC = 150 mAde, VCE = 10, Vde) 30 90
(lC = 500 mAde, VCE = 2.~ Vde) 15 -
(IC = 500 mAde, VCE = 10'Vde) 20 -
Collector-Emitter Saturation Voltage(l) VCE(sat) Vde
(IC = 150 mAde,IB= 15 mAde) - 0.3
(lC = 500 mAde, IB = 50 mAde) - 1.4
Base-Emitter Voltage(l) VBE - 1.1 Vde

Current-Gain-Bandwidth Prdduct(2) fT 150 - MHz
(IC = 50 mAde, VCE = 10 Yde, f = 100 MHz)
(VCB = 10 Vdc, IE = 0, f =:1.0 MHz)
Input Capacitance Cib - 70 pF
(VEB = 0.5 Vde, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (S.. Figure 1)
Turn·On Time
Turn-Off Time
*Indicates JEOEC Registered Data.

(1)Pulse Test: Pulse Width S3pO /Js, Duty Cycle"" 1.0%.
(2)fT is defined as the frequen~v at which Ihfel extrapolates to unity.
2-424
2N3114 (SILICON)

voltage, low-power video amplifier applications.
CASE 31
(TO·5)
MAXIMUM RATINGS

Collector-Emitter Voltage* VCEO 150* Vdc
Total Device Dissipation @ T A = 25 ° C PD 0.8 Watt


*Between 0 and 30 mAo
2-425
2N3114 (continued)
ELECTRICAL CHARACTERISTICS ITA = 25 0 e unless otherwise noted)

-
(Ie = 100/LAde, IE = 0)
Collector-Emitter Breakdown Voltage·

(IC = 30 mAde, IB = 0)
BVCEO . 150
150 -
Vde
Emitter-Base Breakdown Volt:ate BVEBO Vde

(IE = 100 "Ade, Ie = 0) 5.0 -
Collector Saturation Voltage· VCE(sat)· Vde
(IC = 50 mAde, Is = 5 mAde)
.Base-Emitter Saturation Voltage·

VBE(sat)
. -
-
1.0
Vde
DC Current Gain·
(IC = O. 1 mAde, VCE = 10 Vde)
hFE
. 15
0.9
-
-
(IC = 30 mAde, VCE = 10 Vde) 30 120
(IC = 30 mAde, VCE = 10 Vde, TA = -55·e) 12 -
(VCB = 100 Vde, IE = 0) - 0.010
(VCB = 100 Vde, IE = 0, T A = 150·C) - 10
Emitter Cutoff Current lEBO /LAde

(V EB = 4 Vde, IC = 0) - 0.10

Ihlel -
(VCE = 10 Vde, Ie = 30 mAde, I = 20 MHz) 2.0 -
UII.'P.ut t:apae~~nee Cob pF
(V CB = 20 Vde, IE = 0, I = 140 kHz) - 9.0
(VEB = 0.5 Vde, IC = 0, 1= 140 kHzl - 80
Small Signal Current Gain hIe

(Ie = 1. 0 rnA, VCE = 5 V, 1= 1 kHzl 25 -
Real Part 01 Input Impedance Re(h ie ) ohms
(Ie = 10 rnA, VCE = 10 V, 1= 100 MHz) - 30
·PW ~ 300 /Lsec, Duty Cycle tI!. 1%
2N3115 (SILICON)
2N3116
2-426
2N3120 (SILICON)
2N3121
PNP SILICON
TRANSISTORS
PNP SILICON ANNULAR TRANSISTORS
· .. designed for general-purpose, medium·speed switching applications. ~~;~DIAR

0.315 01A 0.240
0.335 0.260
• Choice of Package and Power Ratings

O'OOO-ill'
o~. 1
0.'
II
• Low Coliector·Emitter Saturation Voltage - 0.016 01A MiN
0.019 ~
• DC Current Gain Specified From 50 mAdc to 300 mAdc

Pm 1.
2N3120 ,.
3.
CASE 79
TO·39
*MAXIMUM RATINGS
Rating
Symbol
VCEO
2N3120
45
2N3121 Unit
Vdc
:::: DlAll
l 0.'00
iilllI
DlA n
r
0.170
4
Emitter-Base Voltage VEB 4.0 Vdc 0

0.500
Po mW
j
Total Device Dissipation @TA = 25°C 800 360
4.56 2.06 mW/oC ~OIA
Derate above 2SoC
Total Device Dissipation @TC = 25°C Po 3.0 1.2 Watts

2N3121
Operating and Storage Junction T J,Tstg -65 to +200 °c
Temperature Range 0.100
Pin 1. Emitter
2. Base
-Indicates JEDEC Registered Data
3. Collector
0.028
0]48

CASE 22(1)
TO-IS
2-427
"ELECTRICAL CHARACTERISTICS (T A = 25 0 C unless otherwise noted)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) BVCEO 45 - Vde
(lc = 30 mAde, IB = 0)
(lC = 100 )lAde, IE = 0)
(IE = 100 )lAde, IC = 0)
(VCE = 30 Vde, VBE = 0) - 10 nAde
(VCE = 30 Vde, VBE = 0, T A = 1250 C) - 10 )lAde
Emitter Cutoff Current lEBO - 100 )lAde
(VEB = 4.0 Vde, IC = 0)
(VCE = 30 Vde, VBE = 0)
ON CHARACTERISTICS
DC Current Gain(1) hFE -
(lC = 50 mAde, VCE = 1.0 Vde) 30 130
(lC = 50 mAde, VCE = 1.0 Vde, T A = -55 0 C) 12 -
(lC = 300 mAde, VCE = 2.0 Vdel 15 -
(I C= 50 mAde, I B = 2.5 mAdcl - 0.25
(lC = 300 mAde, IB = 30 mAde) - 0.5
(lC = 500 mAde, IS = 50 mAdel - 1.0
Base-Emitter Saturation Voltage VSE(sat) Vde
(lC = 50 mAde, IB = 2.5 mAde) - 1.2
(I C = 500 mAde, I B = 50 mAde) - 2.0
Base-Emitter On Voltage VBE(on) - 1.2 Vde
(lC = 50 mAde, VCE = 1.0 Vde)
Current-Gain-Bandwidth Product(2) IT 130 - MHz
(VCS = 10 Vde, IE = 0, I = 140 kHz)
Input Impedance hie - 1.5 k ohms
Voltage Feedback Ratio hr. - 26 X 10-4
(lc = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
Small-Signal Current Gain hIe 25 180 -
(lC = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
Output Admittance hoe - 1200 J.lmhos
SWITCHING CHARACTERISTICS (Figure I)
(lC~300 mAde, IBI ",,30 mAde)

UC"",300 mAde, lSI = IS2~30 mAde)
* IndIcates JEOEC Registered Data.
(1 )Pulse Test: Pulse Width'" 300 MS, Duty Cycle = 1.0%.
(2)fT is defined as the frequency at which Ihfel extrapolates to unity_
FIGURE 1 - SWITCHING TIMES TEST CI RCUIT

+4.0 V o--~Wlr---,
o~GENErOR ~o
Vin = -9.0 V L-J ~wt~ ~.~.~ns 15 i ,. tr< 1.0 ns
lin"" 50 Q -= lin> 0.1 Megohm
2-428
2N3127 (GERMANIUM)
PNP germanium mesa transistor designed for in-

dustrial and commercial VHF jUHF amplifier applica-
tions.
CASE 20
(10·72)
Active Elements Isolated From Case
MAXIMUM RATINGS


Operating & Storage Junction Temperature TJ, Tstg -65 to+ 100 °c
2-429
2N3127 (continued)
TABLE I - GROUP A INSPECTION (T ... =: 2S-C unless otherwise noted) (lTPO applies to JAN 2N3127 only)
MIL·STD·7S0 Limits
Examination or Test Symbol Unit LTPD
Method Min Max
SUBGROUP 1
Visual and Mechanical Examination 2071 - - - - 10
SUBGROUP 2
Collector-Base Breakdown Voltage 3001 BV CBO Vde

(IC = 100/lAde, IE = 0) Condition D 25 -
(IC = 2 mAde, IB = 0) Condition D 20 -
Collector-Emitter Breakdown Voltage 3011 BVCES Vde
(Ic = 100 /lAde, VBE = 0) Condition C 25 -
Collector-Base Cutoff Current 3036 ICBO "Ade
(V CB = 10 Vde, IE = 0) Condition D - 3.0
5
Emitter-Base Cutoff Current 3061 lEBO "Ade
(VBE = 0.75 Vde, IC = 0) Condition D - 100
DC Current Gain
3076 hFE
20 100
-
Base-Emitter Saturation Voltage 3066 VBE(sat) Vde
(Ic = 5 mAde, IB = 1 mAde) Condition A - 0.6

(IC = 5 mAde, IB = 1 mAde) - 0.3
SUBGROUP 3

(Ic = 3 mAde, VCE = 10 Vde, f = 1 kHz)
3206 hre
20 125
-
Current-Gain - BandWidth Product 3261 fT MHz 10
-
(IC = 2 mAde, VCE = 6 Vde, f = 100 MHz)
Collector - Base Capacitance'-

(V CB = 10 Vde, IE = 0, f ~ 0.1 ~ 1.0 MHz)
3236 C eb . 400
- 1.2
pF
SUBGROUP 4
Collector-Base Cutoff Current 3036 ICBO /lAde

-
I
(VCB = 10 Vdc, IE = 0, TA = 85°C) Condition D 50
10
DC Current Gain =t 3076 hFEf -
(IC = 3 mAde, VCE = 10 Vdc, TA = -55 ~~ OC) 7.0 -
SUBGROUP 5
Power Gain (Figure 1) 3256 Gpe dB

(Ie = 3 mAde, VCE = 10 Vae, RS = 50 ohms, 17 25
f = 200 MHz)
15
Noise Figure (Figure 1) 3246 NF dB
(IC = 3 mAde, VCE = 10 Vde, RS = 50 ohms,
f = 200 MHz)
- 5.0
STANDARD UNIT ONLY
Collector-Base Time Constant (Figure 2)

(Ic = 3 mAde, VCB = 10 Vde, f = 31.8 MHz)
• Measured in a guarded circuit, such that the can capacitance is not included.
f Applies to JAN unit only.
2-430
2N3127 (continued)
TABLE 11- GROUP B INSPECTION - JAN 2N3127 only CT. = "·c",..,ot"MI",,,od)
MIL·STD·7S0 limits
Method Min Max
SUBGROUP I
Physical Dimensions 2066 - - - - 20
SUBGROUP 2
Solderability
(Omit aging)
2026 - - - -
Temperature Cycling
(Thigh = 100:a °C)
1051
Condition B
- - - -
Thermal Shock (Glass Strain) 1056 - - - -
Seal (Leak Rate).· ..
Condition A
Condition C,
- - 10-7 atm
eels
15
Procedure
mao
Condition B
for Gross
Leaks
Moisture Resistance 1021 - - - -

End-Point Tests: (Subgroups 2, 3)
Collector-Base Cutoff Current 3036 ICBO !JAde

(V CB = 10 Vde) Condition D - 3.0
DC Current Gain
3076 hFE
20 100
-
SUBGROUP 3
Shock
(Non-operating; 1500 Gj 5 blows of 0.5 ms each in
2016 - - - -
Orientations Xl. YI. Y2. and Zt)
(total = 20 blows)
Vibration Fatigue
(Non_operating; 20G)
2046 - - - - 15
Vibration, Variable Frequency 2056 - - - -

Constant Acceleration (Centrifugal)
(20,OOOG, Orientations Xl' Y I , Y2 • and Zt)
2006 - - - -
SUBGROUP.
Lead Fatigue 2036

Condition E
- - - - 15
SUBGROUP S
High-Temperature Life (Non-operating)

(T slg = 1000 C)
1031 - - - - A.15
End-Point Tests: (Subgroups 5, 6)
Collector-Base Cutoff Current 3036 ICBO !JAde

(VCB = 10 Vde, IE = 0) Condition D - 6.0
DC Current Gain
(IC = 3 mAdc, VCE = 10 Vde)
3076 hFE
17 125
-
SUBGROUP 6
Steady State Operation Life

(Ic = 10 mAde, VCB = 10 Vde)
1026 - - - - A = 15
··Per Method 112 of M1L-STD-202
2-431
2N3127 (continued)
TABLE III - GROUP C INSPECTION* - JAN 2N3127 only (T,~,.·e""'",ot"~i"oot"'l
MIL·STD·750 Limits
Method Min Max
SUBGROUP 1
Collector-Base Time Constant (Figure 2) rbC e ps

(IC· 3 mAde. V CB ~ 10 Vde, f • 31.8 MHz) - 12
} 20
Salt Atmosphere (Corrosion) 1041 - - - -
End-Point Tests:

(VCB ~ 10 Vde, IE = 0)
3036
Condition D
ICBO - ~.o JlAde

(IC ~ 3 mAde, VCE = 10 Vde) 20 100
SUBGROUP 2
Output Conductance 3216 Re(h oe ) rumhas
(IC 2 mAde, VCE = 6 Vde, f ~ 30 MHz) 1.0 3.5
Input Conductance
(IC = 2 mAde, VCE ~ 6 Vde, f ~ 30 MHz)
3221 Re(Yie)
1.25 5.0
mmhas ) 10
:t: Group C tests shall be performed on the initial lot and every six months thereafter.
FIGURE 1- TEST CIRCUIT FOR POWER GAIN AND NOISE FIGURE FIGURE 2- TEST CIRCUIT FOR COLLECTOR·BASE TIME CONSTANT
SHIELD
I
I
I
0.1 p.F
OUTPUT
INPUTr
f~31.8MHZ=- HIGH IMPEDANCE
VOLTMETER
0.47 p.H 3.9"H
I
-Vee
0001 Jlf
L, .
T, .
... JA. in. 10, Ij2 in. long, 5 tUrns
#20 solid copper wire, center tapped
~ rn dla, close wound, 3 turns #26
=- roo"" O.I"F O.1"F
solid copper wire, 1: 1 ratio bi-filar
wound .
. . . high quality piston type capacitor. 3.9"H
NOTE: Distance from emitter of

transistor to ground side
01 bypass capacitors to t NOTE: Ein = 0.5 Vmeasured at set point.
be kept minimum. rb'C~ = EO\lt (in mY) x 10
2-432
2N3133 thru 2N 3136 (SILICON)
~ PNP silicon annular Star transistors for high-speed

\ \ switching and DC to UHF amplifier applications.
CASE 22
(TO-18)
2N3133 2N3135
2N3134 2N3136
MAXIMUM RATINGS
Rating Symbol ~~~{34 ~~~~~~ Unit

(TO-5) (TO-18)
Collector Current Ie 6.00 600 mA
@250C ease Temperature 3 1.8 Watts
Derate Above 25°C 17.3 10.3 mW/oC
@25°C Ambient Temperature 0.6 0.4 Watts
Derate Above 25°C 3.43 2.28 mW/oC
JWlction Temperature TJ -65 to +200 °e
Storage Temperature Tstg -65 to +200 °e
SWITCHING CHARACTERISTICS (At 2SoC unless otherwise noted)
Characteristic Symbol Typ Max Unit

Turn-On Time ton ns
(Vee = 30 V, les = 150 mA, IBl = 15 mA) 26 75
Turn-Off Time toft ns
(Vee = 6V, les = 150 mA, IBI = IB2 = 15 mA) 70 150
2-433
ELECTRICAL CHARACTERISTICS ITA =2SoC unless otherwise noted)

Collector Cutoff Current leBO "Ad(
(VCB = 30 Vdc, IE = 0)
(VCB =30 Vdc, IE .. 0, TA = 150°C)
---
---
0.05
30
Collector Cutoff Current leu "Adc:

(VCE = 30 V, VBE =0.5 V) --- 0.1
Base Cutoff Current IBL "Adc:

(VCE .. 30 V, VBE = 0.5 V) --- 0.1

(Ie = 10 "Adc, IE = 0) 50 ---
Collector-Emitter Breakdown Voltage III BVCEO Vdc
(Ie = 10 niAdc, IB = 0) 35 ---
(IE .. 10 "Adc, Ie = 0) 4.0 ---
Collector Saturation Voltage III Vdc
(Ic == 150 mAdc, IS = 15 mAdc)
VCE (sat) ,_ ... 0.6
Base-Emitter Saturation Voltage (1) VBE (sat) Vdc

(Ie =150 mAdc, IB = 15 mAdc) ---. 1.5

(IC = 1.0 mAdc, VCE = 10 Vdc) 2N3133, 2N3135
hFE
25 --- ---
2N3134,
(Ie = 150 mAdc, VCE = 10 Vdc) (1) 2N3133,
2N3136
2N3135
50
40 120
---
2N3134, 2N3136 100 300

(VCB • 10 Vdc, IE = 0, f = 100 kHz) --- 10

(VBE = 2 Vdc, Ie = 0, f = 100 kHz) --- 40

(Ie = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) 200 ---
(1) Pulse Test: Pulse Width s 300 "s, duty cycle s 2%
2-434
2N 3137
(SILICON)
MM1803
NPN silicon annular transistors for large signal VHF

and UHF applications.
CASE 31
(TO-5)
Collector connected ·to case
MAXIMUM RATINGS
Rating Symbol 2N3137 MM1803 Units

Emitter-Base Voltage V EB 4.0 5.0 Vdc
Collector Current (Continuous) 150 150
IC mAdc
Power Dissipation PD Watts

@25'C Case Temperature 2.0
@25'C Ambient Temperature 0.8
Operating Junction Temperature TJ , 'c
Storage Temperature Range -65 to +200
Tstg
Thermal Resistance 'C/
Junction to Case /lJC 87.5 Watt
Thermal ReSistance 'C/
Junction to Ambient /I 153 Watt
JA
250 MHz POWER GAIN TEST CIRCUIT (2N3137) 250 MHz POWER GAIN TEST CIRCUIT (MM1B03)
L-J"Y,n....._...r.., Z out
= 50
L1 = 3/4 turn No. 14 tinned wire 3/8" ID

L2 .075 I'H (5.5 turns #16ga. ID = 3/16" length 1/2") L2 = 4 turns No. 18 tinned wire 1/4" ID 7/16" long
2-435
2N3137, MM 1803 (Continued)
ELECTRICAL CHARACTERISTICS ITA = 25 0 C unless otherwise noted)
Characteristic Symbol Min Typical Max Unit

Collector-Base Breakdown Voltage VCBO Vdc
IC = O. 1mAdc, IE - 0 2N3137 40
MM1803 50
Collector-Emitter Open Base Sus. Voltage VCEO(sus)

2N3137 20 Vdc
IC - 15mAdc, IB = 0
MM1803 25
Collector Cutoff Current ICBO /lAdc

VCB- 20Vdc, IE - 0, TC - +150' C 50
Collector Cutoff Current ICBO /lAdc
VCB -20Vdc, ~=O .05
Emitter-Base Breakdown Voltage VEBO Vdc
IE - 100jLA, IC - 0 2N3137 4.0
MM1803 5.0
DC CUrrent Gain hFE

VCE - 5Vdc, IC = 50mAdc 2N3137 20 120
MM1803 40 160
Collector,..Emitter Saturation Voltage VCE(sat) Vdc
IC - 50mAdc, IE - 5m'Adc 0.3
Ihie I
VCE - 10Vdc, IC .. 50mAdc,f - 100 MHz 5.0
Common-base Output Capacitance Cob pF
V
CB - lOVdc, IC "0, f - 100kHz 3.5
Power Output P 400 600 mWatts
out
Power Gain Pin - 100mw, f = 250MHz 2N3137 Ge 6.0 7.7 dB
Efficiency VCE - 20Vdc 11 40 65 %

Power Output Pout 560 700 mWatts.
Power Gain Pin - 100mw, f -.250MH~ MM1803 Ge 7.5 8.5 db
Efficiency VCE - 20V 11 45 60 %
*Pulse Width '" 300 /lS, Duty cycle - 1%

2N3209 (SILICON)

PNPSILICON
TRANSISTOR
designed for medium·speed saturated switching applications.
• Low Collector· Emitter Saturation Voltage -

Cob = 5.0 pF (Max) @ VCB = 5.0 Vdc
• DC Current Gain Specified - 10 mAdc to 100 mAdc
*MAXIMUM RATINGS
Total Device Dissipation@TA = 2SoC Po 360 mW
0.209
Derate above 2SoC 2.06 mW/oC 0.230
F
DlA
Total Device Dissipation @TC=250C Po 1.2 Watts
~o
Operating and Storage Junction T J,Tstg -65 to +200 °c
I ~o
Temperature Range
1
'"Indicates JEDEC Registerad Data.
0.500
m
J
DiA
VBB -2.0 V
STYLE 1
Pin 1. Emitter
2. Base
100 62 3. Collector 0.050
0.100
0.1 MF 2.0k rv t - - - - - O Vout
V;"~
Pulse Source
~
To Sampling Scope
AiseTime<1.0ns 100 Input Z "'" 100 kn 0.028
PW>200 ns Rise Time < 1.0 ns 0.048
Zin '" 50 n
To convert to millimeters multiply by 25.4.

All JEDEC TO-18 dimensions and notes apply.
Notes:
(1) Collector Current"'" 30 rnA
(2) Turn On and Turn Off Base Currents"'" 1.5 rnA
(3) ton - VBS = +3.0 V, Vin = -7.0 V
(4) toft - Vas = -4.0 V, Vin '" +6.0 V
CASE 22(1)
TO·18
2-437
2N3209 (continued)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage( I) VCEO(sus) 20 - Vde

(lC = 10 mAde, IB = 0)
Collector-Emitter Breakdown Voltage BVeES 20 - Vde
(le= 10/lAde, VBE =0)
(lC = 10 /lAde, IE = 01
(IE = 100 /lAde, IC = 0)
(VCE = 10 Vde, VBE = 0) - 0.080 I'Ade
(VCE = 10 Vde, VBE = 0, TA = 125°C) - 10 /lAde
Base Cu rrent IB - 80 nAde
(VCE = 10 Vde, VBE = 0)
ON CHARACTERISTICS

(lC = 10 mAde, VCE = 0.3 Vde) 25 -
(lC = 30 mAde, VCE = 0.5 Vde) 30 120
(lc = 30 mAde, VCE = 0.5 Vde, T A = -55°C) 12 -
(lc = 100 mAde, VCE = 1.0 Vde) 15
Collector-Emitter Saturation Voltage( I) VCE(sat) Vde
(lC = 10 mAde, IB = 1.0 mAde) - 0.15
(lc = 30 mAde, I B = 3.0 mAde) - 0.2
(lC = 100 mAde, IB = 10 mAde) - 0.6
Base-Emitter Saturation Voltage( I) VBE(sat) Vde
(lC = 10 mAde, IB = 1.0 mAde) 0.78 0.98
(I C = 30 mAde, I B = 3.0 mAde) 0.85 1.2
(lC = 100 mAde, IB = 10 mAde) - 1.7
Current-Gain-Bandwidth Product(2J IT 400 - MHz

(lc=30mAde, VCE = 10Vde,l= 100MHz)
(VCB = 5.0 Vde, IE = 0, I = 140 kHz)
I nput Capacitance Cib - 6.0 pF
(VEB = 0.5 Vde, IC = 0, I = 140 kHz)
SWITCHING CHARACTERISTICS (Figure 11

(lC""30 mAde, IBI ",,1.5 mAdel
Turn-Oil Time toll - 90 ns
(lC ",,30 mAde, IBI = IB2",,1.5 mAde)

(1)Pulse Test: Pulse Width = 300 IJ.s, Duty Cycle = 1.0%.
(2)fT is defined as the frequency at which lhfel extrapolates to unity.
2-438
2N321 0 (SILICON)
NPN silicon high frequency switching transistor

is designed for high speed, saturated switching appli-
cations for industrial service.
CASE 22
(TO-IS)
MAXIMUM RATINGS

Applicable from 0 to 500 mAdc


Storage Temperature Range T stg -65 to+ 200 °c

OV-, r +5.0V
-9.0VW
INPUT PULSE
Rise Time ~ 1.0 ns
50 n Source Impedance
0.1 pi 1.0 k
O.lpl' ~
OUTPUT TO
SAMPLING OSCILLOSCOPE
Rise Time ~ 1.0 ns
100 50 n Input Impedance
PW~200 ns
+7.0V
2-439
2N3210 (continued)
, -"

Characteristic Symbol .Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage' f1 1 BVCEO(suS) Vde
(IC = 30 mAde, ~ = 0) 15 -
Collector-Base Breakdown Voltage' BVCBO Vdc
(IC = 2. 0 /lAde, ~ = 0) 40 -
(IE = 10 /lAde, IC = 0) 5.0 -
Collector Cutoff Current I CEX nAde
(V CE = 20 Vde, VEB(off) = 3.0 Vde) - 25
Collector Cutoff Current I CBO /lAde

(VCB = 20 Vde, IE = 0) - 0.010
(V CB = 20 Vde, IE = 0, TA = 150'C) - 15

(VEB = 2.0 Vde, IC = 0) - 100

(V CE = 20 Vde, VEB(off) = 3.0 Vde) . - 0.025
ON CHARACTERISTICS
DC Current Gain' (11 hFE -
(IC = 10 mAde, VCE = 1. 0 Vde) 30 120

(IC = 20 mAde, IB = 2.0 mAde, 'TA = +125'C) - 0 ..25
(IC = 200 mAde, IB = 20 mAde) - 0.75

(IC = 10 mAde, IB = 1.0 mAde) 0.7 0.8
(I C = 200 mAde, IB = 20 mAde) - 1.5
(IC = 20 mAde, VCE = 10 Vde., f = 100 MHz) 300 -
(V CB = 10 Vde, IE = 0, f = 100 kHz) - 6.0
Turn-On Time t ns
on
(VBE(off) ~ 0.2 Vde, IC = 200 mAde, IB1 = 40 mAde) (Figure 2) - 40

(IC = 200 mAde, IB1 = 40 mAde, IB2 = 20 mAde) (Figure 2) - 40
Storage Time t ns
s
(IC ~ IB1 ~~2 ~ 20 mAde) (Figure 1) - 20
f11Pulse Test: Pulse Width ~ 300 /lS, Duty Cycle ~ 2.0%.
FIGURE 2 - TURN-ON AND TURN·OFF TEST CIRCUIT
::rL INPUT PULSE

+5.0V
Rise Time ~ 1.0 ns

50 n Source Impedance
O.lp.f 1.0k
O.lp.f
(---'w--o
1
OUTPUT TO
SAMPLING OSCILLOSCOPE
Rise Time ~ 1.0 ns
200 50 n Input Impedance
PW~200ns
-4.0V
2-440
2N3211 (SILICON)
NPN silicon high frequency switching transistor de-

signed for high speed, saturated switching applications
for industrial service.
MAXIMUM RATINGS
CASE 22 Collector-Emitter Voltage VCEO 15 Vdc
(TO-18)
Total Device Dissipation @ TA = 25'c PD 0.36 Watt

Derate above 25 'c 2.06 mW/"C
Total Device Dissipation @ TC = 25'C PD 1.2 Watts
Derate above 25'C 6.9 mW/'C
Operating & Storage Junction

Temperature Range T J , Tstg -65 to +200 'c
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sreakdown Voltage SV CEO Vde
(IC = 30 mAde, IS = 0) 15 -
Collector-Base Sreakdown Voltage SVCSO Vde
(IC = 10 /lAde, IE = 0) 40 -
Emitter-Base Sreakdown Voltage SVESO Vde
(r.:
= 10 /lAde, IC = 0) 6.0 -
Collector Cutoff Current I CEX nAde
(V CE = 20 Vde, VES(off) = 3.0 Vde) - 25
Base Cutoff Current ISL /lAde

(V CE = 20 Vde, VES(off) = 3.0 Vde) - 0.025
(V CE = 20 Vde, VES(<>ff) = 3.0 Vde, TA = 85' C) - 10
ON CHARACTERISTICS
DC Current Gain' (I) I hFE -
(IC = 100 /lAde, VCE = 1. 0 Vde) 20 -
(IC = 1.0 mAde, VCE = 1.0Vde) 50 -
(IC = 10 mAde, VCE = 1. 0 Vde) 50 150
(IC = 10 mAde, VCE = 1.0 Vde, TA = -55'C) 20 -
(IC = 50 mAde,. VCE = 1. 0 Yde) 40 -
(IC = 100 mAde, VCE = 1. 0 Vde) 30 -
(IC =' 500 mAde, VCE = 5.0 Vde) 10 -
Collector-Emitter Saturation Voltage 111 Vde
VCE(sat)
(IC = 10 mAde, IS = 1. 0 mAde) - 0.2
(Ic = 50 mAde, IS = 5.0 mAde) - 0.3
(IC = 100 mAde, IS = 10 mAde) - 0.4
Sase-Emitter Saturation Voltage 111 Vde

VSE(sat)
(IC = 10 mAde, IS = 1. 0 mAde) - 0.85
(IC = 50 mAde, IS = 5.0 mAde) - 1.0
(IC = 100 mAde, IS = 10 mAde) - 1.2
(I) Pulse Test: Pulse Width ~ 300 /lS, Duty Cycle ~ 2. 0%.
2N3211 (continued)

(IC : 10 mAde, V CE : 20 Vde, I : 100 MHz) 350 -
(V CB : 10 Vde, IE : 0, I : 100 kHz) - 4,0
(V BE : 0, 5 Vde, IC : 0, I: 100 kHz) - 7,0
Charge-Storage Time Constant T ns

s
(IC ~ IBI ~ IB2 ~ 10 mAde) (Figure 1) - 15
Total Control Charge

~ pC
(IC : 10 mAde, IB : 1. 0 mAde) (Figure 2) - 60
Active Region Time Constant fA ns

(IC : 10 mAde, IB : 1. 0 mAde) (Figure 3) - 2,5
FIGURE 1 - CHARGE STORAGE TIME CONSTANT TEST CIRCUIT

+ IOVdc
O.l"F
t,~ 1.0 ns
V;'~
Oscilloscope tr ~ 1 ns
Z'o"" 50 ohms Z'o"" 50 ohms
-IOV
50
+llV
FIGURE 2 - TOTAL CONTROL CHARGE TEST CIRCUIT
+ 3,Q Vdc
SLOV
100
300 10 ns MAXl ~ -L
PULSE AT A
'ADJUST V" FOR 0 TO+ S,O VOLT

100
I Xo:v-r
--..~o'v" 50mV MAX
PULSE AT A
FIGURE 3 - ACTIVE REGION TIME CONSTANT TEST CIRCUIT
IS,O k
r - - -...."""'-1~-....-O SCOPE
Jl.:S,QV Vout
SOD 50
INPUT
SIGNAL TA = TRE ='I"FE
+6,QV
TRE""
ill
-l tr
cs
- - - - - - GROUND PLANES
NOTES FOR FIGURES 2, 3

INPUT PULSE - TRANSITION TIME TO +S,O Vdc"; 2,0 n,
INPUT PULSE - OPTIONAL GENERATOR OUTPUT ]MPEDANCL ADJUST FOR + S,O Vdc
~~~~~ :~~~~ f~~~gl~Ac~c~103MoE86~Al
SCOPE RISE TIME;? 0.7 ns
2N3227 (SILICON) For Specifications, See 2N2369 Data.
2-442
2N3232 (SILICON)
2N3235
CASEll~
ing and amplifier applications,
(TO-3)
MAXIMUM RATINGS
Rating Symbol 2N3232 2N3235 Units
Collector - Emitter Voltage VCEO 60 55 Vdc
Collector Current (Continuous) IC 7.5 15 Adc
Base Current (Continuous) IB 3.0 7.0 Adc
Power Dissipation Pn 117 Watts
Thermal Resistance, Junction to Case 1.5 °C/W

°JC
Junction Operating Temperature Range TJ -65 to +200 °c
120
'2
d
100 ~
~
0:
.~
d 80
~
.S<
'"
~ ......
is'" 60
...............
...
............
a"
~ 40
Po.
.............
0 20 i'....... .......
~200
Po.
o
o 25 50 75 100 125 150 175
T C ' Case Temperature (oC)
2-443
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted I
Emitter-Base Cutoff Current mAdc

~BO
(VEB ~ 6.0 Vdc) 2N3232 - 1.0
(V EB ~ 7.0 Vdc) 2N3235 - 5.0
Collector -Emitter Cutoff Current ICEX mAdc

(V CE ~ 60Vdc, VBE ~ -1.5 Vdc) 2N3232 - 1.0
2N3235 - 1.0
(V CE ~ 30 Vdc, VBE ~ -1. 5 Vdc, TC ~ 150°C) 2N3232 - 5.0
2N3235 - 5.0
Collector-Emitter Sustaining Voltage*
VCEO(SUS) • Vdc
(IC ~ 100 mAdc, IB ~ 0) 2N3232 60 -
2N3235 55 -
Collector Current ICEO mAdc
(VCE ~ 60 Vdc, IB ~ 0) 2N3232 - 10
(V CE ~ 55 Vdc, IB ~ 0) 2N3235 - 10
DC Current Gain* hFE -

(IC ~ 1. 5 Adc, VCE ~ 10 Vdc) 2N3232 18 -
(IC ~ 3.0 Adc, VCE = 10 Vdc) 2N3232 18 55
(IC ~ 2 Adc, VCE = 4 Vdc) 2N3235 20 -
(IC = 4 Adc, VCE = 4 Vdc) 2N3235 20 70

(IC ~ 3.0 Adc, IB = 0.2 Adc) 2N3232 - 2.5
(IC ~ 4.0 Adc, IB ~ 0.4 Adc) 2N3235 - 1.1
Base-Emitter Voltage* VBE Vdc

(IC = 3.0 Adc, VCE = 10 Vdc) 2N3232 - 3.5
(IC = 4.0 Adc, VCE = 4 Vdc) 2N3235 - 1.8

(V CE = 10 Vdc, IC = 3.0 Adc, f = 1. 0 MHz) 2N3232 1.0 -
(V CE = 4 Vdc, Ie = 4.0 Adc, f = 1.0 MHz) 2N3235 1.0 -
*Use sweep test to pre.vent overheating.
2-444
2N3244 (SILICON)
2N3245
PNP silicon annular transistors for medium-current,

high-speed switching and driver applications.
CASE 31
(TO-S)
MAXIMUM RATINGS
Rating Symbol 2N 2N Unit

3244 3245

@ 25'0 C Ambient Temperature 1.0 Watt
Derating Factor Above 25"C 5.71 mWrC
@ 25 0 C Case Temperature 5.0 Watts
Derating Factor Above 25°C 28.6 mWrC
Thermal Resistance, Junction to Ambient 6JA 0.175 °C/mW

Thermal Resistance, Junction to Case (JJC 35 °C/W
2-445
Cha racteristic Fig. No. Symbol Min Max Unit

Collector Cutoff Current ICBO ",Ade
(VCB = 30 Vde, x.: = 0) - .050
(VCB = 30 Vde, x.: = 0, T A = 100"C) - 10

(V CE = 30 Vde, V BE(off) = 3 Vdc) - 50
Emitter-Base Leakage Current x.:BO nAde

(V EB = 3 Vde, IC = 0) - 30
Base Cutoff Current IBL nAde

(V CE = 30 Vde, V BEloff) = 3 Vdc) - 80

(IC = 10", Ade, IE = 0) 2N3244 40 -
2N3245 50 -
(IC = 10 mAde, IB = 0) 2N3244 40 -
2N3245 50 -
(IE = 10", Ade, IC = 0) 5.0 -
Collector Saturation Voltage (11 2,3 VCE(sat) Vde
(IC = 150 mAde, ~ = 15 mAde) 2N3244 - 0.3
2N3245 - 0.35
(IC = 500 mAde, ~ = 50 mAde) 2N3244 - 0.5
2N3245 - 0.6
(lc = 1 Ade, ~ = 100 mAde) 2N3244 - 1.0
2N3245 - 1.2
Base-Emitter Saturation Voltage (1) 3 VBE(sat) Vde
(IC = 150 mAde, IB = 15 mAde) - 1.1
(IC = 500 mAde, ~ = 50 mAde) 0.75 1.5
(IC = 1 Ade, ~ = 100 mAde) - 2.0
DC Forward Current Transfer Ratio (11 1 hFE

60 - -
(IC = 150 mAde, VCE = 1.0 Vde) 2N3244
2N3245 35 -
(IC = 500 mAde, VCE = 1.0 Vde) 2N3244 50 150
2N3245 30 90
(IC = 1 Ade, VCE = 5 Vde) 2N3244 25 -
2N3245 20 -
(V CB = 10 Vde, IE = 0, f = 100 kHz) - 25
Input Capacitance 5 C ib pF
(VOB = 0.5 Vde, IC = 0, f = 100 kHz) - 100

2N3245 150 -
Delay Time td ns
(Ic = 500 mA, ~1 = 50 mA 6,8
- 15
VOB =2V, VCC = 30 V) t ns
Rise Time r
2N3244 - 35
2N3245 - 40
Storage Time t ns
s
(IC = 500 mA, VCC = 30 V
2N3244 6,9 - 140
2N3245 120
Fall Time ~1 = ~2 = 50 mAl tf ns
- 45
Total Control Charge 7,10 ~ nC

(IC = 500 mA, IB = 50 mA, VCC = 30 V) 2N3244 - 14
2N3245 - 12
111 Pulse Test: PW ~ 300 /lS, Duty Cycle ~ 2%
2-446
r T
-
2.0
125°C
IV _
1.5
25°C
I 75°C
-.....;
--- . ~.,..
- - 2V
I
f-
~ 1.0 ................ 1'0...""
,- .......:'" "'~.
15°C
~ ="'.. ... 2JOC-f-
'II ' - f -
i 55°C
~ ~
1i
z: 0.5
,.,\,: ~
0.2
50 100 200 500 1000
Ie, COllECTOR CURRENT (IlIA)
FIGURE 2 - COlLECTOR·EMlmR SATURATION VOLTAGE CHARACTERISTICS
in 1.4
~
0
~
~
2N3244 _
1.2
'""" \ .T, = 25°C
~
0
>
1.0 le=50mA Ie = ISO mA Ie = 500 mA \ , e = 750mA
'":=
:i
:l: 0.8 \ \. "- ............
~
\ "- ......... -
0
u
::E
::>
::E
~ 0.4
::E
1:& 0.2
0.6
....
"- .......
I-
-- r--
0.5 1.0 2.0 5.0 10 20 50 100 200

1.4
~
0
I
2N3245 -
..
~
~
1.2 T, = 25°C _
'"
~
0
> \ ~50mA
--
1.0 50 mA ISO mA
'":= \500mA
:i I"'
~ 0.8
f3~
c5 0.6
<..>
\ , ...........
I""'-...
::E
::>
\ I" 1-1-1-
r-...
'"
::E
~ 0.4
::E r--
IJ 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
2-447
FIGURE 3 - MAXIMUM SATURATION VOLTAGES FIGURE 4 - TYPICAL TEMPERATURE COEFFICIENTS

2.0
LI +0.5 rl-T=r:=!===1:::~;;;;:;T:::i=:::J::::J
I (25 to 125°C)
.1 I...-
1.6 - - fI,=IO
v lE/
~
-~ TJ = 25°C
~ ~
~ -0.5 J---+-+--t--t----1:=""'"-+'.....r.--4--l
... ~~ ----
2N3245 ~ i
ffi
-1.0
0.4 r-r- ~ -1.517"'''+:;;;;.t'''''f''='-;

Vetil..'. 2N3244
o -2 0~~-2~0~0-~~40~0-~~60~0-~~80~0~~~1000
50 100 200 500 1000
Ie. COLLECTOR CURRENT (mA) Ie. COLLECTOR CURRENT· (InA)
FIGURE 5 - JUNCTION CAPACITANCE FIGURE &- TYPICAL SWITCHING TIMES

ISO
TJ = 25°C Veo '30V
160 t. V.. 2V
r- 1-1- MAX--
TYP--- 140
fl. 10 TJ 25°C
100 ......... I" In
~fl. fl. 20
12o 30
Cie. fl. 30 -
lloO ........ {J. 20
...............
20
10
0.1 0.2 0.5 1.0
....
C.. I""-
r...
2.0 5.0 10
r-- 1--
....
20 30
~
;:: SO
60
40
20
o
100
"!lS.
t..'1'0
-
200
10
,.........fJ.
300
10
400
. '0
600 BOO
Ie. COLLECTOR CURRENT (rnA)
REVERSE BIAS (VOLTS)
FIGURE 8 - TURN-DN EQUIVALENT TEST CIRCUIT
20
t~ ~goc
FIGURE 7 - CHARGE DATA
--LIMIT Q,2N3244
+
2V
l-f -lOV
5911
10 Veo 30V
-'-TYPICAL .... ~ SCOPE
Q, -10.75VU 200 Il
~ 5.0 ... PW = 200 ns
RISE TIME ~ 2 ns
~::::: l--'[ DUTY CYCLE = 2%
ii3 2.0 ." II, 2N3245 Q.2N324~t::'
0- 2N3244 ~
~ F"'" ~
1.0
0-
S
50 100 200 500 1000
I.. COLLECTOR CURRENT (mA)
IN916
DUTY CYCLE = 2%
+3V
FIGURE 10 - QT TEST CIRCUIT
FIGURE 11 - TURN·OFF WAVEfORM
C_~
~~~=~
-lll .J 1. 10.,
=2%
DUTY CYCLE
1200 pi ma. lot 2N3245
1400 pi ma. 'Dr 2N3244
2-448
2N3248 (SILICON)
2N3249
PNP silicon annular transistors for low-level, high-

CASE 22
(TO·18)
Collector connected to else

MAXIMUM RATINGS


@. 25°C Ambient Temperature 0.36 watt

@ 25°C Case Temperature 1.2 watts
FIGURE 1 - t.. CIRCUIT

FIGURE 3 - TYPICAL SWITCHING TIMES
Y~3t~r-o
200
~ t-- .... IleL1011"ll~LI
100 Vcc 3V, V.. 0.5V
Y,
T, 25°C
....j I- 300.0
DUTY CYCLE =2" 50 t.
FIGURE 2 - t... CIRCUIT ~t, (10 VI
ov'_ml" I
D---'--
Yee
>---......+-1: -1_
..,-. C.
~
~
~~
....
to-.!'-
~
t, (3 VI
-l I, I-- I.SII .-1
~
I:~~~;'" - -
Ie Vcc Ita lie esc-I· V.. V, V. V,
InA volts oIHns oIHns pF volts volts valts volts 2
10 3 10K 215 4 +0.5 -10.6 -10.9 +9.1 1 10 20 50 100
.
100 1K 10 95
T.... _ _ ltoaceol_JlallldccnlllClOn.
12 +0.5 -10.7 -11.3 +8.7 leo COLLECTOR CURRENT (mAl
2-449
ELECTRICAL CHARACTERISTICS (T A = 250 C unless othewise noted)
Characteristic Fig.No. Symbol Min Max Unit

Collector-Cutoff Current ICEX !lAdc
(V CE = 10 Vdc, VBE(off) = 1 Vdc) - 0.05
(VCE = 10 Vdc, VBE(off)= 1 Vdc, TA = 100°C) - 5.0
Base Cutoff Current IBL nAdc
(V CE = 10 Vdc, VBE(off) = 1 Vdc) - 50
(Ie = 10 !lAde, IE = 0) 15 -
C6llector-Emitter Breakdown Voltage 111 BVCEO Vdc
(Ie = 10 mAde, IB = 0) 12 -
Emitter-Base Breakdown Voltage BV EBO
(IE = 10 !lAde, IC = 0) 5.0 - Vdc
Collector Saturation Voltage 11) 7,8 VCE(sat) Vde

(Ie = 10 mAde, IB = 1 mAde) - 0.125
(Ic = 50 mAde, IB = 5 mAdc)
(IC = 100 mAde, IB = 10 mAde) 2N3248
-- 0.25
0.4
2N3249 - 0.45
Base-Emitter Saturation Voltage 11) 8 VBE(sat) Vde

(Ie = 10 mAde, 1B = 1 mAde) 0.6 0.9
(Ie = 50 mAde, I, = 5 mAde) - 1.1
(Ie = 100 mAde, LB = 10 mAde) 0.7 1.3
DC Current Gain 11) 4 hFE -
(IC = 0.1 mAde, VCE = 1 Vde) 2N3248
2N3249
50
100
--
(IC = 1.0 mAde, VCE = 1 Vde) 2N3248 50 -
2N3249 100 -
(IC = 10 mAdc, V CE = 1 Vdc) 2N3248 50 150
2N3249 100 300
(IC = 50 mAdc, VCE = 1 Vde) 2N3248 35 -
2N3249 75 -
(Ie = 100 mAde, VCE = 1 Vde) 2N3248
2N3249
~5
35
--
(VCB = 10 Vde, IE = 0, f = 100 kHz) - 8.0
Input CapaCitance 6 C ib pF
(VBE = 1 Vde, Ie = 0, f = 100 kHz) - 8.0

(IC = 20 mAdc, VCE = 10 Vde, f = 100 MHz) 2N3248 250 -
2N3249 300 -
Total Control Charge 5,10 QT pC
(Ie = 10 mA, IB = 0.25 rnA, V CC = 3 V) - 150
Delay Time Ie = 100 mA, IB = 10 mA, td - 5.0 ns
1,3
Rise Time VBEloffl = 0.5 V, VCC = III V tr - 15 ns
Storage Time
~ = 100 mA, IBI = IB2 = 10 mA, 2,3 ts - 60 ns
Fall Time CC = 10 V tr 20 ns
Turn-On Time IC = 10 mA, IBI = 1 rnA, 1,3 - 90 ns

ton
VBEloffl = 0.5 V,VCC = 3 V
Turn-Off Time Ie = 10 mA, IBI = IB2 = 1 mA,

VCC = 3 V
2,3 toff - 100 ns
11) Pulse Test: PW = 300 !lB, Duty Cycle:; 2%
2-450

100
T, 125°C 2N3248
Vel:;:: 1 V
1 1
....... .....
50
T, = 25°C
I - ....... ~
..............
-
z
T, 115°C \.
~
.... ~
i ............
,
~
=>
<>
i
20
TJ = _55°C
- ..............
...........
........
i'~
\
"'- r-...
i'"
10
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Ie. COllECTOR CURRENT {mAl
200
T, I 12loc ~NJ24~
Vel = 1 V
r-
100
~ T,I= 25
T,
1c
15°C
-
.............
" ......
r-...."
,
I-- \i\
i' 1\[\
- r-r-...
TJ ;::: -55°C
I\~
'r-. r-.
20
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
FIGURE 5 - MAXIMUM CHARGE DATA FIGURE 6 - JUNCTION CAPACITANCE

5000 20
UNLESS NOTED, Vee _ 3 V
~~A~
2000
TJ ::::; 25°C 100°C
?sfJ ---TYP
1\11 /~ .J1
-- -
1000
aT. f3r. 10 r--..... ....... 1'-...1"-
g Q,,{jF 40 lOa::> Cob
.........
~ 500 .......
~
pc:;: t..... i"""'" ~ ... Cib
--
--"25 O C ....... r--:
200
100
~
......
1::=:::::::
-- Vee
i--"': V
10 V = a,
Vee
II U
..llJ.l.
....H1
3V
~.
--
.....
t""" ...
40 4
I 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10
Ie. COLLECTOR CURRENT {mAl REVERSE BlAS (VOLTS)
2-451
FIGURE 7 COLLECTOR SATURATION VOLTAGE CHARACTERISTICS

I.0
1\
\ 2N324I
T, = 25·C
le= 3mA le=IOmA le=30mA 1\ le=5OmA 1\ le= lOOmA
6
\ 1\
\ 1\
4 \ \ :\ i'-...
r--
~
\, 1\
roo. .......... ~ r... '-
2
"- '- ........
o 1.0 2.0 5.0 10 20

0.02 0.05 0.1 0.2 0.5
1.0
1\
2N3~-
~
'"
0.8
Ie = 3 mA le=IOmA le=30mA
1\
'1 le= 50mA
\
le= 100mA
T, = 25.C
~
~ \
~
0.6
\ I\. I"
~
Iii
IIu
~
i! 0.2
i
0.4
"- "-
"",
" t-..
'"" r.....
'-
",...
r--
IJ
o
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
I~ BASE CURRENT (mAl
FIGURE 8 - SATURATION VOLTAGE LIMITS FIGURE 9 - TYPICAL TEMPERATURE COEFFICIENTS

1.4 1.0
&1.0
t.2 r- t=IO
' - - ' =25OC ..I
MAX V.looI' L....
O.51-- IvcLaL I 1
,
(25·C TO U5·C)
f" r-- ~ mllOll'MArEDlYIA'1CIO

~ .J..ooot'" .... 0 (,55OC,TO +rC)
FROM NOMINAL
~ 0.8 IT >e -ISOC TO +25~ ZSO(: TO 12511C
g-0.5
~
_..... .,. 1--(~55.C'TO +J5OC)
::t .11lV/OC :t .1IMV/OC
MIN V.looI' :to. 5MYI .v/
~ 0.6 2 -1.0
I
5 0.4 1 2N3248
1_1.5 IZr)-
l? r..- ~fotV
~ (25OC TO
1
J MAXV~ '- ~I1N3249
..,...
I -1
0.2 -2
o -2.5
o
I W 20 ~ ~ 50 ~ ~ ~ ~ ~
I 2 10 20 50 100
I.. COlLECTOR CURRENT (mAl Ie COLLECTOR CURRENT (mAl
FIGURE 10 - Q, TEST CIRCUIT FIGURE 11- TURN-OFF WAYE FORM

VALUES REFER TO Ie = 10 mA TEST POINT
235
-3V_w.---.
°<KYO..
t- 14.pFm••
4V _L
-10.' ...l- ,T,
.Jc. < 4pF
~ Jm ~vrLf = 2'110
2-452
2N3250, A (SILICON)
2N3251, A
PNP silicon annular transistors for high-speed

CASE 22
(TO-18)
MAXIMUM RATINGS
Rating 2N3250 2N3250A

Symbol 2N3251 2N3251A Unit
Total Device Dissipation Watts

@ 25°C Case Temperature PD 1.2
6.9 mW/"C
Derating Factor Above 25°C
Total Device Dissipation Watts

@ 25°C Ambient Temperature 0.36
PD 2.06 mW;oC
Derating Factor Above 25°C
Junction Operating Temperature TJ 200 °c
Thermal ReSistance, Junction to Ambient (}JA 0.49 °C/mW

Thermal Resistance, Junction to Case (}JC O. 15 °C/mW
2-453
2N3250, A, 2N3251 I A (Continued)

(V CE = 40 Vde, VBE(off) = 3 Vde) I CEX -- ZO nAdc
Base Cutoff Current
(VCE = 40 Vde, VBE(off) = 3 Vde) IaL -- 50 nAde
Collector-Base Breakdown Voltage 2N3250, 2N3251 BVCBO 50
(Ie = 10pAde) 2N3250A, 2N3251A 60 -- Vde
Collector-Emitter Breakdown Voltage 111
(IC = 10 mAde)
2N3250, 2N3251
2N3250A, 2N3251A
BVCEO 40
60
-- Vde
(IE = 10pAde)
BV EBO 5.0 -- Vde
Collector Saturation Voltage (11
(IC = 10 mAde, Ia = 1 mAde)
"CE(sat> -- 0.25
Vde
(IC = 50 mAde, IB = 5 mAde) -- 0.5

Base-Emitter Saturation Voltage 111 Vde
VBE(sat)
(IC = 10 mAde, Ia = 1 mAde) 0.6 0-.9
(IC = 50 mAde, 18 = 5 mAde) -- 1.2
DC Forward Current Transfer Ratio 111
(IC = 0.1 mAde, VCE = I Vde)
hFE --
2N3250,2N3250A 40 --
= 1 mAde, = 1 Vde)
2N3251,2N3251A 80 --
(IC VCE 2N3250,2N3250A 45 --
(IC = 10 mAde, VCE =IVde)
2N3251,2N3251A
2N3250,2N3250A
90
50
--
150
2N3251,2N3251A 100 300
(IC = 50 mAde, VCE = 1 Vde) 2N3250, 2N3250A 15 ----
2N3251,2N3251A 30
Output Capacitance
(V CB = 10 Vde, IE = 0, f = 100 kHz) Cob -- 6.0 pF
Input Capacitance
(VeB = 1 Vdc, IC = 0, f = 100 kHz)
C1b -- B.O pF
----
Current-Gain - Bandwidth Product 2N3250, 2N3250A 250
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MHz
2N3251,2N3251A 300

(IC = 1.0 mA, VCE = 10 V. f = 1 kHz)
2N3250.2N3250A
2N3251.2N3251A hfe
50
100
200
400
--
(Ic = 1. OmA, VCE = 10 V, f = 1 kHz)
2N3250.2N3250A h -- 10
X10- 4
2N3251.2N3251A re
-- 20
Input Impedance 2N3250.2N3250A 1.0 6.0
(IC = 1. 0 rnA, VCE = 10 V. f = 1 kHz) hie 12 kohms
2N3251.2N3251A 2.0
Output Admittance 2N3250.2N3250A 4.0 40
h II mhos
(IC = 1.0 rnA, VCE = 10 V. f = 1 kHz) 2N3251.2N3251A oe 10 60
Collector-Base Time Constant
(IC = 10 mA, VCE = 20 V) r'bCC -- 250 ps
Noise Figure
(IC = 100 IIA, VCE = 5 V, RS = 1 k.ll, f = 100 Hz) NF -- 6.0 dB
(I/Pulse Test: PW = 300.us, Outy Cycle = 2%
2-454
2N3250, A, 2N3251, A (Continued)
SWITCHING CHARACTERISTICS ITA = 250C unless otherwise noted)
Delay Time td 35 DS
(Vee = 3 Vde, VBE =0.5 Vdc
Ie =10 mAde, lsi = I mAl
Rise Time tr 35 ns
2N3250,2N3250A 175
Storage Time ts ns
(lsi =IB2 = I mAde 2N3251,2N325IA 200
Vee = 3Vl
Fall Time tf 50 DS
SWITCHINQ TIME CHARACTERISTICS
FIGURE 1 - DELAY AND RISE TIME FIGURE 2 - STORAGE AND FALL TIME
500 500
I
I\. TJ = 25°C
Ic= 101., -
• TJ - 25"C
ie-lOla, = lOla
V... =O.SV Vcc-3V
200 ~ 200
100 " ""

1'\ ~
~
100 l~
to
'"
--
~ ~
"' '-
, ~
I"
t,.@Vee =3V f- I-
I I
"
"" r"
!" t,. =10V
"' ~
@ Vee
t,
20
" ~
~ "
20
10
~ I\..
........ '"r-... 1""0
10
"""
"'
5 10 20
'" " 50 5 10 20 50
Ie. COllECTOR CURRENT (mAl Ie. COllECTOR CURRENT (mAl
2-455
AUDIO SMALL SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(Ve. =6V. T. =25 C)0
FIGURE 3 - FREIlUENCY FIGURE 4 - SOURCE RESISTANCE

10
I
I
"
I~ 1kHz
\.
I IJ.
le~ lOmAI
1\ il
........ SOORCE RESISTANCE ~ 4.3 K II IJ
...... Ie ~ 10,.A le~ 10,..\
V
'I /)
" "- ....

i"o..
'" .........
1"- ~
r-...
V ~
/ le~l00"'\
SOUiCE RESISTANCE ~
le~ 100,..\
tS - K
o
100 200 400 1K 2K 4K 10K 20K 40K lOOK 100 200 400 1K 2K 4K 10K 20K 40K lOOK
f. FREQUENCY 1Hz) R•• SOURCE RESISTANCE (OHMSI
h PARAMETERS
Ve. = lOV. f = 1 kHz. T. = 2S'C
400 200
100 ".
200
, i---"r-"
~ JAN 2N3251A
so
=
-
I--
I--
f-
2N3251,2N3251A
JAN 2N3251A
./ ./
V ~ 1 20 ./
V
100 -;3250, 2N32~

J 10 " 2N325O, 2N325OA
JAN 2N325OA
80 JAN 2N325OA 5.0
I'
SO
50
40 10 I'"
0.1 0.2 0.5 10 2.0 5.0 1Q 0.1 0.2 0.5 10 2.0 5.0 10
Ie. COLLECTOR CURRENT (IlIA) Ie. COLLECTOR CURRENT (IlIA)
FIGURE 7 - VOLTAGE FEEDBACK RATIO FIGURE B - INPUT IMPEDANCE

50 20
....... ........ i'o...
20 ~ " "" 10
I'
'"
2N3251 , 2N3251A
1
:3
M
10
"~ " 2N3251, 2N3251 A
JAII2N3251A
i
::5
5.0 ,.....
...... JAN 2N3251A
"-
.J •
ii: 2N3250, 2N325OA~ I'
2.0
"
....... JAN 2N325OA
5.0
.........
2.0
0.1 0.2
2N3250, 2N325OA
I JAII12~~m
0.5 10
r......
2.0
Ie: COLLECTOR CURRENT" (IlIA)
-- - 5.0 10
1.0
0.5
0.1 0.2 0.5 1.0 2.0
Ie. COLLECTOR CURRENT (IlIA)
5.0 10
2-456
FIGURE 9 - NORMALIZED CURRENT GAIN CHARACTERISTICS

2.0
TJ - 12~OC
.......
z
$ 1.0
TJ ~ loc i'.. r-...
; TJ ~ ~~~oc
~,
~
.:""'!
--- '" , I"

~
i O.~
Ii -..~
i
I r-T
NORMALlZ£DAT Ie = 10 mAo Ve• = I V
74 - 2N32~0. 2N3250A. JAN 2N32~OA
TYPICAL h" ~ 2N3 2N32t' JI 2Nr'r
0.2
0.1 0.2 O.~ 1.0 2.0 ~.O 10 20 ~o
FIGURE 10 - COLLECTOR SATURATION REGION

1. 0
:.,
TJ ~ 25°C
This graph shows th.e effect of base current on colle.ctor current: fio is the
current g~," of the transistor at 1 volt, and f3F (forced gam) is the rattO of Ic/isF
In a circUIt. EXAMPlL for type 2N3251. estimate a base current 11,,1 to Insure
saturation at a temperature of 25°C and a collector current of 10 rnA.
Observe that at Ie ~ lOrnA an overdrive factor of at least 2.5 is required to
drive the transistor well into the saturation region. From Figure 9, it is seen that
~OrnA
~~
h,,@ 1 volt IS typically 1671guaranteed limits from the Table of Characteristics
/30 rnA can be used for "worst-case" design) .
167
2 2.5 ~ lOrnA/I"
0
lOrnA'
I
3t. . I,,:::: 6.68 rnA typ
3
'7f;. OVERDRIVE fACTOR
FIGURE 11 -SATURATION VOLTAGES FIGURE 12 - TEMPERATURE COEFFICIENTS

1.0 1.0
0.8
pi, ~\0
-TJ = 25°C
V"I'::J,. ,,/
......
i'
O.S !I
9ve for VeE' ... }
25°C tt 125 0
,.
; -
w 0.6
~
,.
P
-SSOC to 2S0C
YV
'" -O.S
-
~ § ." 9v,forV.. -
~
z: isu i"'" _I--r- -
2
:i:::> 0.4 ..: -1.0
tl:I
0
- WCtOJ2S~
L
.......
~
'-'
-1.5 ~~
VeE I..'} _I-" ?"
~
0.2
-2.0 - -55°C to 25°C
-2.5 I I
10 20 so o 10 20 30 40 50
Ie. COLLECTOR CURRENT (mAl Ie. COllECTOR CURRENT (mAl
2-457
2N3250, A, 2N3251 , A (Continued)
FIGURE 13 - fT AND rb'C e versus Ie FIGURE 14 - 30 MC EQUIVALENT CIRCUIT

400
VeE = 10V;
le=5mA.
M.A. G. = 29 d81TYPlCALLYl
~
:0 \ V I-- 1;-" r- ........ 2.1 pF
j t; 300
Ii
~ ~
=>
Q
\;
z:
...
0
<.>
!
.
%
~
z:
/ '\
r--.....
200
-....... .......
I~ ~
z:
~
§
I t--. rit'CC
1700 35 pI V, x 100
mmhos
2.2Ko 3 pF
<.>
.; '"
'"
a 100
~ .:: Vee = 20V
TAl = 25~C
o
o 10 15 20 25 30
Ie. COLLECTOR CURRENT (mAdel
FIGURE 15 - JUNCTION CAPACITANCE FIGURE 16 - CHARGE DATA
20 1000
TJ ~2JOC - Vcc=10V
LL
---Vee=3V I
t-- t-- PF = 10
500 I-- t-- TJ = 2S OC It:
1
10 I,L
.......
~
........
..
~
..... 200
Q,.
~ ~
.
....
Cob ~-
~r-...
" r--..
.... r--!"o
'" ..... r--!"o
100
Ci• I'"
i'. 50 L
'" ..... ..".,

,. J"
,
L-
~.,
1-- I"
20 ~-
0.1 0.2 0.5 1.0 2.0 5.0 10 1 5 10 20 50
REVERSE BIAS IVOLTS) Ie. COlLECTOR CURRENT (mAl
2-458
2N3252, 2N3253
(SILICON)
2N3253 JAN AVAI LABLE
2N3444
NPN silicon annular transistors for high-current

saturated switching and core driver applications.
CASE 31
(TO-5)

MAXIMUM RATINGS

Emitter-Base Voltage VEB I 5.0 I Vdc

25°C Case Temperature • 5.0 I Watts
Derate above 25°C I 28.6 • mW/oC

25°C Ambient Temperature I 1.0 • Watt
Derate above 25°C • 5.71 • mW/OC
Junction Operating Temperature Range TJ • -65 to + 2 0 0 - °c
Storage Temperature Range Tstg - -65 to + 2 0 0 - °c
9JC 35 °C/W
Thermal Resistance:
9JA 0.175 °C/mW
SWITCHING CHARACTERISTICS ITA = 25°C unless otherwise noted)

uutpUt I.,;apacitance cob pF
(VCB = 10 Vdc, IE = 0, f = 100 kHz) - 12
Input CapaCitance C1b pF

(V EB = 0.5 Vdc, Ie = 0, f = 10O.kHz) - 80
Current Gain-Bandwidth Product fT MHz

(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N3252 200 -
2N3253,2N3444 175 -
Total Control Charge QT nC
(IC = 500 mAdc, IBI = 50 mAdc, VCC = 30 V) - 5.0
Delay Time Ie = 500 mAdc, Isl = 50 mAdc td - 15 ns
Rise Time VCC = 30 V, VBE = 2 V 2N3252 tr - 30 ns

2N3253, 2N3444 - 35
Storage Time IC = 500 mAdc, IBI = Is2 = 50 mAdc ts - 40 ns
Fall Time VCC = 30V tr - 30 ns
2-459
2N3252, 2N3253, 2N3444 (continued)

Collector Cutoff Current ICBO p.Adc
(VCB; 40 Vde, IE ; 0) 2N3252 - 0.50
(VCB; 40 Vde, IE ; 0, T A ; lOO°C) 2N3252 75.0
(VCB; 60 Vde, IE ; 0) 2N3253, 2N3444 0.50
(V CB ; 60 Vde, IE ; 0, T A ; lOOOC) 2N3253, 2N3444 75.0
Emitter Cutoff Current lEBO p.Ade

(VBF ; 4 Vde, IC ; 0) - 0.05
Collector Cutoff Current ICEX p.Ade

(VCE; 40 Vde, VEB(Off); 4 Vde) 2N3252 - 0.5
(VCE; 60 Vde, VEB(off); 4 Vde) 2N3253, 2N3444, - 0.5
Base Cutoff Current IBL p.Ade

(VCE ; 40 Vde, vEB(off)~ 4 Vde) 2N3252 - 0.50
(VCE = 60 Vde, VEB(Off); 4 Vde) 2N3253, 2N3444 - 0.50
---
(Ie; 10 /lAde, IE ; 0) 2N3252 60
2N3253 75
2N3444 80
Collector-Emitter Breakdown Voltage 111 BV CEO Vdc

(Ie; 10 mAde, pulsed, IB; 0) 2N3252
2N3253
30
40
--
2N3444 50 -
(IE ; 10 p.Ade, Ie = 0) 5.0 -
Collector Saturation Voltage 111 VCE (sat) Vdc
(I C ; 150 mAde, IB = 15 mAde) 2N3252 - 0.3
2N3253, 2N3444 - 0.35
(Ie ; 500 mAdc, IB = 50 mAde) 2N3252
2N3253, 2N3444
-- 0.5
0.60
(Ie ; 1.0 Adc, IB = 100 mAde) 2N3252 - 1.0
2N3253, 2N3444 - 1.2
Base-Emitter Saturation Voltage 111 VBE (sat) Vdc

(IC = 150 mAde, IB = 15 mAde) - 1.0
(IC = 500 mAde, IB ; 50 mAde) 0.7 1.3
(IC = 1.0 Ade, IB ; 100 mAde) - 1.8
DC Forward Current Transfer Ratio 111 hFE -
(I C ; 150 mAde, VCE; 1 Vde) 2N3252 30 -
2N3253 25 -
(IC ; 500 mAde, VCE = 1 Vde)
2N3444
2N3252
20
30
-
90
2NS253 25 75
2N3444 20 60
---
(IC = 1 Ade, VCE ; 5 Vde) 2N3252 25
2N3253 20
2N3444 15
111 Pulse Test: Pulse width = 300/ls, duty cycle; 2%
2-460
2N3252, 2N3253, 2N3444 (continued)
COLLECTOR SATURATION VOLTAGE CHARACTERISTICS
_ 1.4
g 2N3252
~ 1.2 r--
\ 1\
i
~ 1.0 \ \
T, = 25°C
5 1 \
::>
10= l00mA 10= 250 mA \ 10=500mA 10= 750mA
-
55 0.8
\ \
'"
~!'!~
_
~
0.6
I'
\
r-...
......
i--
-- !0-
---
::IE 0.4
~
oJ 0.2
2 4 6 7 .8 9 10 15 20 30 40 50 60 70 80 90 100 150 200
I.. BASE CURRENT (mAl
\ \
~ 1.2
\
2N3253
T, = 250C -
i
~ 1.0 ,
\
~
10= loomA le= 250 mA Ie = 500 mA 1c=750mA
~ 0.8
\ I"
O~
_
~
0.6 ~
i'
'\...
-- r--
:IE
~ 0.4
'-.
.J 0.2
2 4 6 7 8 9 10 15 20 30 40 50 60 70 60 90 100 150 2DO
It. BASE CURRENT (mAl
;;; 1.4
!:;
g \
2N3444
• 1.2
T, = 25°C
f--
~
>
~ 1.0
\
le= lDOmA
i 10= 250mA le= 5DOmA \1.= 750mA
~ 0.8 1\
i"""
~
i 0.6
\
\
"-
" .............
IIi
J
0.4
"
0.2
2 4 6 7 8 9 10 15 20 30 40 50 60 70 80 90 100 150 2DO
I.. BASE CURRENT (mA)
2-461
2N32 52, 2N3253, 2N3444 (continued)
70
50
T, 125'C
- r--:....- "' . 1 2N3252
VCE = 1V
_
~
~
T, 25°C -VeE 2V
~ ...
T,
T,
15°C
55°C --
"' ..... "-
---.. I"-...r-.."'"" ~"" ~
~,
... ['-.... r-...~ '~" t.....:

~~
5L-__ ~~ __ ~~~ ________ ~ ____ ~ __ ~ __ ~ ____ ~ ____L-__ L-~ __ L-~~
50 60 70 80 90 lOa 200 300 400 500 600 700 800 900 1000
Ie. COLLECTOR CURRENT (mA)
70r---r-~--.--r-.--------r-----r----r---r-----r----r-~r--~1~1r-~T~
50 c==r==t=""F""+'7"""'7:;;:-+--==*=::::::~:;:;::-::±------t----j_-+_+ll
I T 125°C ~- ...... J
2N3253 -
VeE = 1 V
5~--~~--~~~--------~----~--~--~----~----~--~~--~~~
50 60 70 80 90 lOa 200 300 400 500 600 700 800 900 1000
70
50 1 'N3444 _
-- -::..::::
VeE -1 V
T, 125°C -VeE 2V
z
;;: 30 ~-- .......
'"
~ -"':::::: ........
i
T, 25°C
~ 1-.,.......
20
- r-- ~"
--""
T, _ 15°C
~
'z"
"
j 10
T, _ 55°C
~~ ~ ~
...... ...
......
5
50 60 70 80 90 100 200 3D!) 400 500 600 700 800 900 1000
TYPICAL STORAGE TIME VARIATIONS TYPICAL FALL TIME VARIATIONS

100 100
t- I:, ...,~tt
.... f .... ~
,8, 20
-- - --
70 70 Vee = 30 V
1-- 1'\ _ _ 25°C TJ
~,8,=2rl ~. f;;
-;
.s
50
L.. I~ 1"1, .. -;
.s
50
'" I!.
~
_125°C TJ
--
.... ....
'"
;:: r\" I-- rT I'-of-.,I ... '";:: fI' - 10
~ [":: t....... I·
....
co
<
'"
0
30
~
~
~~
,8'1'10
..... "'r-. '-'
~
~
30
-......;
~ C"-
~- l-
1"-- ....... t--.....
.- I--~
In 20 111 =1.1 ~
"""" I", I, -1/81'_1 20
........
,:
t:::" -
- - - 25°C
--125°C
r- t-
10
I I 10
50 70 100 200 300 500 700 1000 50 70 100 200 300 500 700 1000
Ie. COLLECTOR CURRENT (mA) Ie. COLLECTOR CURRENT (mA)
2-462
2N3252, 2N3253, 2N3444 (continued)
TYPICAL TURN-ON TIME VARIATIONS WITH VOLTAGE TYPICAL RISE TIME VARIATIONS WITH TEMPERATURE
100 100
(J,=10 Vee 30V:f:
70 TJ = 25°C 70 (J, 10
'- ~
-=25°C
50 '-~ 50
r-....
1'1" j ~ t,
_125°C
oS
I
~ 30
I" I"... ~
...;:: 30
~
'~
"~r.. I" ~ t'.....
- ~ee~~~ '"
~
;:: Ii:
20 t"- ........ t, ~ 20
_!'o..
....... ~
Vee = 30V ~ .~~...
tdl @:..: =; °l~ Nd@!"~2J

10 10
50 70 100 200 300 500 700 1000 50 70 100 200 300 500 700 1000
Ie, COLLECTOR CURRENT (mA) Ie, COLLECTOR CURRENT (mA)
JUNCTION CAPACITANCE VARIATIONS MAXIMUM CHARGE DATA

200 10,000
T}=
-MAX
J5O~ 7000
f--
I-
Vee' 30 V
le= 10 I~ 1/
100 ~
- - - TYP
5000
I- TJ= 250 C
V / T(12~oC-
TJ=125 0
< /.
/~ ~N3253, 2N3444
r;:
....e.....z
70
50
....
!"0-
-
C,.
r--
~
g 2000
3000
/
/ I7/
V
I?'
~
..I~ 72N3252
~
....
c
!1c
u 30
... I 1000
V/ I' IAV
//
700 . /
20
~ .... U
1"- .....
..... r.. r-..... .........
Cob
500
a..
~ '"
r.. .... ......... 300
10
8 200
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 70 100 200 300 500 700 1000
REVERSE BIAS (VOLTS) I.. COLLECTOR CURRENT (rnA)
LIMITS OF SATURATION VOLTAGES TYPICAL TEMPERATURE COEFFICIENTS
V
1.8 2.0
1.6 (J,~10 II 2JOC TO l1250

TJ = 25°C 1.5
1I
I
c:.FL... I-'"
--
1.4
In V 1.0
.....
!:; ./ (lye for Veil"" ~5°CT025°C
~ 1.2
~
~ 1.0
g
MAX V"I'I!--- V
1-
j,.o~"" t7
II 11
....
.g
0.5
- ;
--
~ 0.8
~
~ 0.6
:i 0.4
MINV"I••tl
MAX VeEhotl 2N3253·2N3444

- f-- ....
~ t::::
I.-'
L.,..; Vlol
S
u
~ -0.5
8
-1.0
~•• fO~V~ F'"'"
~
125 0 Cj!5
1'1
~ ~55°C TO 25°C
V
0.2
o
MAX Vee 1"'1 2N3252
-1.5
-2.0
. .:v-r
50 70 100 200 300 500 700 1000 o 200 400 600 800 1000
Ie, COLLECTOR CURRENT (mA) Ie, COLLECTOR CURRENT (rnA)
2-463

gain, low-noise amplifier, oscillator, mixer and fre-
quency multiplier applications.
CASE 20
(10·72)
MAXIMUM RATINGS
2N3280 2N3282
Emitter-Base Voltage VEB 1.0 0.5
Total Device Dissipation @ TA = 25° C PD 100 mW

Derate above 25°C 1. 33 mW/oC
Ope-rating and Storage Junction Temperature Range TJ , Tstg -65 to +100 °c
POWER GAIN AND NOISE FIGURE Jersus COllECTOR CURRENT NEUTRALIZED POWER GAIN AND NOISE FIGURE versus
_MHz FREQUENCY
!50
COMMON EMITlU V.. = 10 V,
20
Ie =3 IlIA
25
_40
........
~ 20 1-::;;_=f!5e;!!";:;:;;l~~lb~~~ III
~.
............
i 15~~~~~-4~~-4~~~~~~ i 30
I"'-....
r..
i
f
J
10 120
Ii J
10
-a. """.- ............
_/
J;
r-....
r..
o
,..:~ !If
-' .......... o
4 6 10 20 40 60 100 200 400 600 1000 2000
I.. COlLECTOR CURRENT (IlIA) f, F1IECIUUIC'I (MHz)
2-464
Characteristic
OFF CHARACTERISTICS
(IC = 2.0 mAdc, IB = 0) 2N3279, 2N3280 20 - -
2N3281, 2N3282 15 - -
(IC = 100 /.LAdc, VBE = 0) 30 - -
(IC = 100 /.LAdc, IE = 0) 30 - -
Collector Cutoff Current I CBO /.LAdc
(VCB = 10 Vdc, ~ = 0) All Types - 1.0 5.0
(V CB = 10 Vdc, IE = 0, TA = +55°C) 2N3279, 2N3280 - - 50

(V BE = O. 5 Vdc, IC = 0) 2N3281, 2N3282
~BO - - 100
/.LAdc
(V BE = O. 75 Vdc, IC = 0) 2N3279, 2N3280 - - 100
ON CHARACTERISTICS
(IC = 3.0 mAdc, VCE = 10 Vdc) 2N3279, 2N3280 10 - 70
2N3281, 2N3282 10 - 100
VCE(sat)
(IC = 5. 0 mAdc, IB = 1. 0 mAdc) 2N3279, 2N3280 - - 0.3
2N3281, 2N3282 - - 0.5
VBE(sat)
(IC = 5.0 mAdc, !B = 1. 0 mAdc) 2N3279, 2N3280 - - 1.0
2N3281, 2N3282 - - 1.5
Current-Gain-Bandwidth' Product fT MHz
(IC = 3.0 mAdc, VCE = 10 Vdc) 2N3279, 2N3280 400 500 800
2N3281, 2N3282 300 400 800
Maximum Frequency of Oscillation f MHz
max
(IC = 3.0 mAdc, VCE = 10 Vdc) - 2000 -
Output Capacitance* Cob* pF
(V CB = 10 Vdc, IE = 0, f = 100 kHz) 2N3279 - 0.9 1.0
2N3280 thru 2N3282 - 1.0 1.2
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 1. 0 kHz) 2N3279, 2N3280 10 - 100
2N3281, 2N3282 10 - 150
Collector-Base Time Constant r
b
'c c ps
(IE = 3.0 mAdc, V CB = 10 Vdc, f = 31. 8 MHz) 2N3279, 2N3280 3.0 5.0 10
2N3281, 2N3282 3.0 5.0 15
Noise Figure NF dB
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 200 MHz) 2N3279, 2N3280 - 2.9 3.5
2N3281, 2N3282 - 4.0 5.0
FUNCTIONAL TESTS
Power Gain G dB
pe
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 200 MHz) 2N3279, 2N3280 17 - 23
2N3281, 2N3282 16 - 23
Power Gain (AGC)** Gpe(AGC)** dB
(IC = 20 mAdc, VCE = 5.0 Vdc, f = 200 MHz) 2N3279, 2N3281 - - 0
2N3280, 2N3282 - 0 -
*C ob is measured in a guarded circuit such that the can capacitance is not included.
**AGC is obtained by increasing Ie' The ·circuit remains adjusted for V CE = 10 Vdc and IC = 3.0 mAdc
operation.
2-465
PNP germanium epitaxial mesa transistors for TV

and FM, RF and IF amplifier, oscillator and general
purpose high-gain, low-noise amplifier applications.
CASE 20
(TO·72)
MAXIMUM RATINGS
Rating Symbol 2N3283 2N~~~~ Unit

2N3284 2N3286

Derate above 25°C 1. 33 mWjOC
Operating and Storage Junction Temperature Range T J' T stg -65 to +100 °c
NEUTRALIZED POWER GAIN AND POWER GAIN AND NOISE FIGURE versus
50
NOISE FIGURE versus FREQUENCY COLLECTOR CURRENT 200 MHZ
20
COMMON EMIHER V" = 10 V Ie = 3 mA 30 1
COMMON EMITTER I
40 "- 16 25
neulrallzallonand lunmg set at IldVI /
Vel = lOY, Ie :::" 3mA)
............ rY
r-...... ~ 20 .,,-I
~
12
~ 15
i'--~ -'
~ - Gpe ['., l'
.............
~ 10 I-:;. Nf
l/
'"
/
10
o
10
_G pe
•• Nf..l
20 40 60 100
- 200
,..../ ["--.
400 600
t'-
1000
~
2000
"''Ii.
"
-5
5
" -' l - I--

t- 15VI-
~
3
6 10 12 1. 16 18 20
f, fREQUENCY I MHzl I" COLLECTOR CURRENT (mAl
2-466
ELECTRICAL CHARACTERISTICS lIT A = 250 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(IC = 100 fJAdc, VBE = 0) 2N3283, 2N3284 25 30 -
2N3285, 2N3286 20 25 -
Collector Cutoff Current ICBO fJAdc
(VCB = 10 Vdc, IE = 0) - 2.0 10
Emitter Cutoff Current lEBO fJAdc

(V BE = 0.5 Vdc, IC = 0) - - 100
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 10 Vdc) 2N3283, 2N3284
2N3285, 2N3286
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 100 MHz) 250 400 800
Maximum Frequency of Oscillation f MHz

max
(IC = 3.0 mAdc, VCE = 10 Vdc) - 2000 -
Output Capacitance' , pF
Cob
(VCB = 10 Vdc, IE = 0, f = 100 kHz) - 1.0 1.5

(IC = 3.0 mAdc, VCE = 10 Vdc, f = 1. 0 kHz)
2N3283, 2N3284 10 - 200
2N3285, 2N3286 5.0 - 200
Collector- Base Time Constant r b 'c c ps
(IE =3.0mAdc, VCB =10Vdc, f=31.8MHz) - 10 25
Noise Figure NF dB
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 200 MHz)
2N3283 - 4.0 5.0
2N3284 - 5.0 6.0
2N3286 - 5.0 -
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain Gpe dB

(VCE = 10 Vdc, IC = 3.0 mAdc, f = 200 MHz)
2N3283, 2N3284 16 20 23
2N3286 14 - -
Power Gain (AGe)" Gpe(AGe)" dB
(VCE = 5.0 Vdc, IC = 20 mAde, f = 200 MHz, Figure 1)
2N3283 - - 0
2N3284 - 0 -
Power Output P mW
out
(VEE = 12 Vdc, f = 247 MHz) 2N3285 2.0 - -
• Cob is measured in a guarded circuit such that the can capacitance is not included.
,. AGe is obtained by increasing IC' The circuit remains adjusted for VCE = 10 Vdc and IC = 3.0 mAdc operation.
2-467
FIGURE 1 - 200 MHz POWER GAIN AND NOISE FIGURE TEST CIRCUIT
SHielD
I
I
I
I
CN
l·1 OUT
SOil
Rl
SOllr;
RI
IN
':" 470
NonS:
l·1 'I. inch inside diameter, If> inch length, 4 turns #20 solid copper wire,
center tapped.
T·I \4 inch inside diameter, close wound, 3 turns #26 solid copper wire. 1:'1
ratio bi·liller wound.
• Hi8h Quality piston type capacitor.
Distance Irom emitter contact 01 transistor to ,round sid. 01 bypass capaci.
tor should be kept minimum I, -Vee
FIGURE 2 - 257'MHzDSCILLATOR POWER OUTPUT TEST CIRCUIT
8KII
.001"F~
10011
l, - 4 TURNS OF # 22 NYKLAD WIRE SPACED FOR 257 MC. COIL FORM 7/32" CENTER POWER
RFC - 24 TURNS # 30 NYKLAD WIRE CLOSE WOUfjD DETECTOR
ALL CAPACITORS ARE CERAMIC TYPE
2-468
NPN silicon annular transistors for high-gain, low-

noise amplifier, oscillator, mixer and frequency mul-
tiplier applications.
CASE 20
(TO·72)
MAXIMUM RATINGS

2N3288 2N3290
Collector - Emitter Voltage VCES 40 30 Volts
Collector - Emitter Voltage VCEO 20 15 Volts
Emitter - Base Voltage VEB 3.0 3.0 Volts
Collector Current IC 50 50 rnA
Power Dissipation at 25°C Case PD 300 300 mW

Above 25°C derate 1. 71 mW/oC
Power Dissipation at 25° C ambo PD 200 200 mW

Above 25°C derate 1. 14 mW;oC
Junction Temperature TJ , +200 +200 °C
Storage Temperature Range T -65 to +200 -65 to +200 °C

stg
200 MH % TEST CIRCUIT: POWER GAIN, NOISE FIGURE, & AGC
RL =500
ll,6 turns of #16 tinned wire; %" 10; Air wound; winding length 3,4"; T1,3 turns primary and secondary Bifilar wound (close wound) on '14"
Vccfeeds tap 4% turns from collector end; output tap 3'12 turns ceramic form (cambian type) with brass slug. #22 enameled wire.
from collector end.
PI,General Radio 874 G6 Pad (6dB)
P2,Generai Radio 874 G6 Pad (6dB)
2-469

Collector-Base BV CBO IC = 10 /.IAdc, IE = 0 Vdc
Breakdown Voltage 2N3287, 2N3288
2l'i3289, 2N3290
40
30
-- -
-
Collector-Emitter BV CES IC = 10 /.IAdc, VBE = 0 Vdc
Breakdown Voltage 2N3287, 2N3288 40 - -
2N3289, 2N3290 30 - -
Collector-Emitter BVCEO IC = 2.0 mAdc, IB = 0 Vdc
Breakdown Voltage 2N3287, 2N3288
2N3289, 2N3290
20
15
-- --
Emitter-Base
Breakdown Voltage
BV EBO IE = 10 /.IAdc, IC = 0 3.0 - - Vdc
--
Collector Cutoff ICBO VCB = 15 Vdc All Types - .010 /.IAdc
Current VCB = 15 Vdc, TA = 150 0 C 2N3287, 2N3288 - 3.0
DC Forward Current hFE VCE = 10 Vdc, IC = 2 mAde -
Transfer Ratio 2N3287, 2N3288 15 '- 100
Collector-Emitter
2N3289, 2N3290 10 - 150
VCE (sat) IC = 5 mAdc, IB = 0.5 mAdc Vdc
Saturation Voltage 2N3 287, 2N3288
2N3289, 2N3290
-- -
-
0.3
0.4
Base- Emitter VBE (sat) IC = 5 mAdc, IB = 0.5 mAdc Vdc
Saturation Voltage 2N3287, 2N3288 - - 0.9
2N3 288, 2N3290 - - 1.0
AC Current Gain
hfe VCE = 10 Vdc, IC = 2 mAdc, f = 1 kHz
2N3287, 2N3288 15 - 150
-
2N3289, 2N3290 10 - 200
Output Capacitance Cob VCB = IOVdc,IE =O,f = 0.1 MHz(Note 1) pF
2N3287 - 0.9 1.1
Collector-Base
2N3288 thru 2N3290 - 1.2 1.5
rb'C c VCB = 10 Vdc, IC = 2 mAde, f = 31.8 MHz ps
Time Constant 2N3287, 2N3288 3.0 8.0 15
2N3289, 2N3290 3.0 8.0 20
Current Gain - iT VCE = 10 Vdc, IC = 2 mAdc MHz
Bandwidth Product 2N3287, 2N3288 350 600 1200
2N3289, 2N3290 300 500 1200
Maximum Frequency
of Oscillation
f max VCE = 10 Vdc, IC = 2 mAdc - 2000 - MHz
Power Gain Ge VCE = 10 Vdc, IC = 2 mAdc, f = 200 MHz dB

All Types 17 - 24
Noise Figure NF VCE =10 Vdc, IC = 2 mAdc, f = 200 MHz dB
2N3287, 2N3288
2N3289, 2N3290
-- 4.9
6.0
6.0
7.0
Power Gain (AGC) Ge VCE = 5.0 Vdc, IC =20 mAdc, f = 200MHz( Note 2) dB
2N3287
2N3289
-- -- 0
+5
2N3288, 2N3290 - 0 -
Note 1. Cob is measured in guarded circuit such that the can capacitance is not included.
Note 2. AGC is obtained by increasing IC' The circuit remains adjusted for VCE = 10 Vdc, IC = 2 mAdc operation.
NEUTRALIZED POWER GAIN POWER GAIN AND NOISE FIGURE versus COLLECTOR CURRENT
AND NOISE FIGURE versus FREQUENCY
50 Vet - 10 Vde, Ie - 2 mAde 20
~z:
40
....
, r-....
16
!'
!!! !
30 NF 12~ z:
~ G. ~
~
.
'"
~ 20 "- !X" v· '"<5
z:
..-z :r
""~
d d
10 f-- .
/' r-....
r--'
o
10 20 40 60 100 200
F.REQUENCY (, MHz\.
400 600 1000
" 2000
0
4000
2-470
NPN silicon annular transistor for TV and FM mixer,

RF and IF amplifier and general-purpose, low-noise,
high-gain amplifier applications.
CASE 20
(TO-72)
MAXIMUM RATINGS

2N3292 2N3294
Collector - Emitter Voltage VCES 25 20 Volts
Emitter - Base Voltage VEB 3.0 3.0 Volts
Collector Current Ie 50 50 mA
Power Dissipation at 25°C Case PD 300 300 mW
Above 25°C derate 1. 71 mW/oC
Power Dissipation at 25°C Amb. PD 200 200 mW

Above 25°C derate 1.14 mW/oC
Junction Temperature TJ +200 +200 °c
Storage Temperature Range Tstg • -65 to +200 • °c
NEUTRALIZED POWER GAIN POWER GAIN AND NOISE FIGURE versus COLLECTOR CURRENT
AND NOISE FIGURE versus FREQUENCY
50 Vco- 10 Vde, Ie - 2 mAde 20
40
... 16 iii 20
~ 3
~
II!
!'"
!z 16
.... II. ~
NF 12
ii
l!l
"- ')< ,,-
12
z '"
0
8 ..: 0~
z ... .....
.",,' .J
.......
10
~.- --- 4
4
o
10 20 40 60 100
flIEQUENCY
200
(MHz)
400 600 1000
" 2000
0
4000
2-471
ELECTRICAL CHARACTERISTICS eTA = 25°C unless otherwise noted)
Cha racteristic Symbol Test Conditions Min TVp Max Unit

C ollector-Emitter BVCES Ie= 25 "Adc, VBE = 0 Vdc
Breakdown Voltage 2N3291, 2N3292 25 35 -
2N3293,2N3294 20 30 -
leBO V CB = 10 Vdc, IE = 0 - .01 0.1 /lAdc
Emitter Cutoff Current lEBO VEB = 0.5 Vdc, Ie = 0 - - 100 "Adc
DC Forward Current
Transfer Ratio
hFE VCE = 10 Vdc, Ie = 2 mAde 10 - - -
AC Current Gain hte VCE = 10 Vdc, Ie = 2 mAdc, 10 - 200 -
f = 1 kHz
Output Capacitance Cob VCB = 10 Vdc, IE = 0,
f = 100 kHz , Note 1
- 1.0 2.0 pF
AC Current Gain Ibrel VCE = 10 Vdc,

f = 100 MHz
Ie = 2 mAdc 2.5 6.0 12 -
Collector-Base
Time Constant
rbCC V CB '= 10 Vdc, IC = 2 mAdc
f = 31.8 MHz
- 15 30 ps
Maximum Frequency
of Oscillation
fmax VCE = 10 Vdc, Ie = 2mA - 2000 - MHz
2N3291
Power Gain Ge 16 20 24 dB
VCE = 10 Vdc, Ie = 2 mAdc,
Noise Figure NF f = 200 MHz - 6.0 8.0 dB
Power Gain (AGe) Ge Note 2

VCE = 5 Vdc, Ie = 20 mAdc
- - 0 dB
f = 200 MHz
2N3292
Power Gain Ge 18 20 24 dB
VCE = 10 Vdc, IC = 2 mAdc
Noise Figure NF f = 200 MHz - 7.0 9.0 dB
Power Gain (AGe) Ge Note 2 - 0 - dB

VCE = 5 Vdc, IC = 20 mAdc
f = 200 MHz
2N3293
Power Output Pout
VEE =-11 Vdc, f = 257 MHz
2.0 - - mW
2N3294
Power Gain Ge 14 - - dB
VCE = 10 Vdc, Ie = 2 mAdc
Noise figure NF f = 200 MHz - 7.0 - dB
Note 1. COb is measured in guarded circuit such that the can capacitance is not included.
Note 2. AGe is obtained by increasing Ie.' The circuit remains adjusted for VC'E = 10 Vdc,
Ie = 2 mAdc operation.
2-472
2N3295 (SILICON)
NPN silicon annular Star transistor for linear am-

plifier applications from 2.0 to 100 MHz.
CASE 31
(TO-S)
MAXIMUM RATINGS·
Rating Symbol Rating Unit

Collector Current (Continuous) 250 mAdc

IC

(25°C Case Temperature) 2.0 Watts

(25°C Ambient Temperature) 0.8 Watts
Junction Temperature Range TJ -65 to 175 °C
Storage Temperature Range Tstg -65 to 175 °C
• The maximum ratings as given for DC conditions can be exceeded on a

pulse basis. See Electrical Characteristics.
2-473
2N3295 (Continued)
Characteristic Symbol Rating Min Ty~ Max Unit

vCE = 60Vdc, VBE = 0 -- -- 100 II Adc
Collector-Emitter Current ICES
VCE = 50Vdc, VBE = 0,
T C =175°C -- -- 500 Il Adc
Collector Cutoff Current ICBO VCB = 50Vdc, IE = 0 -- -- O. I Il Adc
Emitter Cutoff Current lEBO VEB = 5 Vdc, IC = 0 -- -- 100 II Adc
IC = 10mAdc,
DC Current Gain hFE VCE = 10Vdc 20 -- 60 --
IC = 150mAdc,
VCE = 10Vdc 111 20
_. -- --
Collector-Emitter VCE(sat) IC = 150mAdc, Vdc
Saturation Voltage IB = 15mAdc -- -- 0.5
Base-Emitter VBE(sat) IC = 150mAdc,

Satutation Voltage IB = 15mAdc -- -- 2.0 Vdc
Collector- Emitter V
CES(sus)
III IC = 100mA,
RBE =0 30 -- -- Volts
Sustain Voltage
Collector-Emitter Open
V ' I I Ic = 100mA, IB = 0
CEO(sus) 20 -- -- Volts
Base Sustain Voltage
AC Current Gain Ihfe I VCE = 10Vdc, --

I C = 10mAdc, f=50MHz 4.0 -- --
Collector Output Cob VCB = 10Vdc, IE =0, pF
Capacitance f = 100kHz -- -- B.O
Power Input (PEP) (Note I) Pin -- -- 12 mW
Power Gain Ge
P
ou
t =O. 3 Watts
PEP
14 17 -- dB
Intermodulatlon
Distortion Ratio
1m
(0.15 W rms)
f = 30MHzYCE = 15. OVdc
30 32 -- dB
Efficiency 1/
IC(max) =40mA 25 30 -- %
I1J Pulse Test: Pulse Width = 100 liS, Duty Cycle = 2 %
Note 1. PEP. Peak Envelope Power
2-474
2N3295 (Continued)
SAFE OPERATING AREA POWER OUTPUT versus FREQUENCY

500 0.4
IIII
400
~
\ 0.5 ~S P~LSE ~IDTH
. 0.2
~~
, ,.~
~~ ~~
%~ ~~
'\ 50% DUTY CYCLE
~ ~ 0~
~~.
~ ~
ig ~
~ 1\
300 \ 0.1
O.1Il!
~
~ 0.06
~
~
200 \.
~ "I\. Te - 25°C
15
~
;;
0.04 ""-
\.\. \.
'\.
DC ~ \\ \
"
.!J
100
..... I--- VeE - 15 Vdc
.....
0.02
I. DISTORTr <-3, dB I \ :\r\
I'.... ....... 0.01
10 20 30 40 50 60 10 20 40 60 80 100 200 400
Ve" COLLECTOR· EMIITER VOLTAGE (VOlTSI I. FREQUENCY MHz)
MAXIMUM POWER OUTPUT FOR GIVEN 1m DISTORTION LEVEL POWER OUTPUT versus OPTIMUM BIAS
0.5 0.5
i"""-o ........
/
r-.... ....... Ve.-15Vdcl
/
~ 0.4 ~ 0.4 r--
1-30 MHz.
~ r-.... ~
MINIMUM 1m DISTORTION
Te - 25°C /
~ ~ I--
~
" /
0.3
\ ~ 0.3
/
i 1\ i
J 0.2 r-- _Ve.-15Vdc
i J 0.2 /
II~ 30 HZ
/
/
0.1 0.1
25 30 35 40 3.0 3.2 3.4 3.6 3.8 4.0
I., INTERMODULATION DISTORTION (,dB BELOW SIGNAU lelo"I' OPTIMUM NO - SIGNAL COLLECTOR CURRENT (mAl
OUTPUT CHARACTERISTICS versus POWER INPUT

30 MHz 4 MHz
0.5 50 0.5 50
r- MINIMu! 1m DllTORTliN ~ i-""

.y ........ r""
YCE 1 =15Vdc P•
, ..... 40
~
0.4
./
40
. ~
0.4
V L ~
i
~
0.3
~
~
/'
....... -- ,
30 i ~
~ 5
§
0.3
/
;,. ~
~
,/
30 ~
i3
~
I I
co
15 0.2 ~ 20 0.2 ./ 20
~ A""-
~ .....
i I ./
J 0.1 10 ~ 0.1
/ p... MINIMUM I. DISTORTION
ICE ; 115 VdC _ 10
"
V / 1
o V o oV o
o 10 o 0.05 0.1 0.15 0.2 0.25
p., POWER INPUT (mW - PEP) P,. ' POWER INPUT ImW - PEP)
2-475
2N3296 (SILICON)
NPN silicon annular transistor for linear amplifier

applications from 2 to 100 MHz.
(10-102)
Collector connected to case;
MAXIMUM RATINGS (Note 1)

Collector Current (Continuous) IC 700 mAdc
RF Input Power (Note 2) P. 1.0 Watt (PEP)
10
RF Output Power (Note 2) P 5.0 Watts (PEP)

out
Total Device Dissipation Po
(25°C Case Temperature) 6.0 Watts
Derating Factor above 25°C 40 mW/oC
Total Device Dissipation at PD
(25°C Ambient Temperature) . 0.7 Watts
.Derating Factor above 25°C 4.67 mW/oC
Note 1: The maximum ratings as given for dc conditions can be exceeded on a
pulse basis. See Electrical Characteristics.
Note 2: PEP = Peak Envelope Power.
2-476
2N3296 (Continued)
Characteristic Symbol Conditions Min Typ Max Unit

Collector-Emitter Sustain Voltage VCES(SUSJ' 11 IC - O. 200A, RBE ; 0 85 120 -- Volts
Collector Emitter-Open
VCEO(susJI IC ; O. 200A, I B ; 0 40 -- -- Volts
Collector-Emitter Current
VCE ; 60Vdc, VBE ; 0 -- -- 100
ICES /lAdc
VCE ; 50Vdc, VBE ; 0, TC; +175°C -- -- 500
Collector-Cutoff Current ICBO VCB ; 50Vdc, IE; 0 -- -- 0.1 /lAdc

Emitter-Cutoff Current lEBO VEB ; 3Vdc, IC; 0 -- -- 100 /lAdc
DC Current Gain hFE

VCE ; 2. OVdc, IC ; 40mAdc 5.0 -- 50 --
VCE ; 2. OVdc, IC ; 400mAdc 5.0 -- -- --
Collector-Emitter Saturation Voltage VCE(sat) IC - 400mAdc, IB ; 80mAdc -- -- 0.5 Vdc
Emltter-Base Saturation Voltage VBE(sat) IC - 400mAdc, IB ; 80mAdc -- -- 2.0 Vdc
AC Current Gain I hfe I VCE ; 2. OVdc,I C ; 40mAdc, f ;50MHz 2.0 -- -- --

Collector Output Capacitance Cob VCB ; 25Vdc, IE ; 0, f; 100kHz -- -- 20 pF
Power Input (PEP) (Note 2) P.

10 -- -- 75 mW
Power Gain G
e
Pout; 3.0 Watts (PEP)(l. 5 W rms) 16 19 -- dB
VCE ; 30 Volts, f; 30MHz
Intermodulation Distortion Ratio I
m
IC(max) ; 125mA
30 35 -- dB
Efficiency 1'/ 40 48 -- %
III Pulse Test. Pulse Wldth - 100 /lsec. Duty Cycle; 2%.
Note 2 PEP. Peak Envelope Power.
2-477
2N3296 (Continued)
SAFE OPERATING AREA POWER OUTPUT versus FREQUENCY

1400 4.0
~ I I IIII
-~~
~
1200
~
1000
\ ~
2.0
Ve.=3~VcIc ~~
~
1"\4\:\~
%
~ \ ~
1M DISTORTION < - 3D dB .~~
a 800 0.5 .S PULSE WIDTH ~
1.0
~ ~
, ;~% DUTY CYCLE 0.8

~ ---.;
h E 0.6
:j
8
600
15 '""
""
'"
0.4
~ 400
Te ~ 25'C
~ \.
.J \.\. \.
~ f'-.. ........
.9
0.2
200
~""- \ 1\ 1\
10 2D 30
" 40 50 60 7D
Veo . COLLECTOR· EMITTER VOLTAGE IVOLTS!
80 90
D.1
10 2D 40 60 80 100
,. FREQUENCYf MHz I
200
MAXIMUM POWER OUTPUT FOR GIVEN 1m DISTORTION LEVEL POWER OUTPUT versus OPTIMUM BIAS
~
,1=30~H~b-
,1= 30~HZ
f-- I--OPTIMUM BIAS
""' " VeE = 30 Vdc
f\.
\
1\
\ , I\Va = 30VcIc
Te=25'C- I--
r-- ....r-.. '\ \

[\ /
i--"'"
Ve• ~ 15 Vd':-- r--
o
-r-. " o
\. /
V
Ve.= 15Vc1c
20 25 30 35 40 45 2 10 12 14
Im.INTERMODULATION DISTORTION IdB BELOW SIGNAU lei",')' OPTIMUM NO - SIGNAL COllECTOR CURRENT ImAdel

30 MHz 4 MHz
60 50
I I I
MINIMUM 1m DISTORTION )I MINIMUM 1m DISTORTION
50
./ J;>< ;-' ~ .... 5D
J,.(,I30Vl
.,13DVI/" I;" J.,. ....1-' ~ ~
.Jf'
~ I
40
V.... ~.1l5V1
40
....... /
~
1/ "",- ry 30
! k-
./ -+-- _. - 1--1--- 30
., ~
e; ~
~
-- -- - -
I/; ~,
1,1l5Vl). 11\ ~
-
2D 20
j P",130Vl ) P,.. 13OVl 1,..-
.: "
I. ... 1--
)
V .... .... "I P",1l5V1
I
1D
)
V
...... .... P... 1l5Vl~
10
o
~ .... I o o
It........ o
o 20 40 60 80 100 o 12 16 20
PI,. POWER INPUT ImW - PEPI PI,. POWER INPUT ImW - PEPl
2-478
2N 3297(SILICON)
NPN silicon annular transistor for linear amplifier

applications for 2 to 100 MHz.
CASE 1
(TO·3)
MAXIMUM RATINGS.



Base-Current (Continuous) ls 500 mAdc
Power Input (PEP) Pin 5.0 Watts (PEP)
Power Output (PEP) Pout 20.0 Watts (PEP)

@ 25°C Case Temperature 25.0 Watts
Derating Factor above 25°C 167 mW;oC

Storage Temperature Range T stg -65 to +175 °C
• The maximum ratlnp u given for de conditions can be exceeded on a pulae baala. See electrical characterlstica
2-479
2N3297 (Continued)

V
Collector-Emitter
Sustain Voltage
\11
CES(sus) It = 0.250A, RBE =0 80 100 -- Volts
Collector Emitter-Open V 111

CEO(sus) IC = 0.250A, IB = 0 40 -- -- Volts
Collector-Emitter
Current ICES
VCE = 60Vdc, VBE = 0 -- -- 0.5
mAdc
VCE = 50Vdc, VBE = 0, TC = +175°C -- -- 1.0
Collector-Cutoff
Current
I CBO VCB = 50Vdc, IE = 0 -- -- 1.0 /lAdc
Emitter-Cutoff lEBO VEB = 3Vdc, IC=O -- -- 100 /lAdc

Current
DC Current Gain IC = 400mAdc, VCE = 2Vdc 6.0 -- 60
hFE --
I C = lAde, VCE = 2Vde 2.5 -- --
Collector-Emitter VCE(sat) IC = 1Adc, IB = 500mAdc -- -- 0.5 Vdc
Saturation Voltage
Emitter-Base VBE(sat) IC = 1Adc, IB = 500mAdc -- -- 2.0 Vdc
Saturation Voltage
AC Current Gain I hfe I VCE =2Vdc, IC = 400mAdc, f = 50MH2 2.0 -- -- --

Collector Output
Capacitance
Cob VCB = 25Vdc, IE = 0, f 'i 100kHz -- -- 60 pF
Power Input (PEP) P.

In -- -- 1.2 Watts
PEP
Note 2 Pout = 12 Watts PEP (6. OW rms)
Power Gain G
e
VCE = 30 Volts, f = 30 MHz 10 13 -- dB
IC(max) = 0.50 Amp
Intermodulation I
m 30 33 -- dB
Distortion Ratio
Efficiency 'I 40 45 -- %
III Pulse Test: Pulse Width = 100 /lS, Dut} Cycl e = 2 %

Note 2. PEP. Peak Envelope Power
2-480
2N3297 (Continued)
SAfE OPERATING AREA POWER OUTPUT versus fREIlUENCY

30 20
15
0.5 JJ. s:. PULSE WIOTH
2.5
1\ 50% DUTY CVCfE
10 ~
5
\ ~ ,
~ ~
';
!
~
2.0
1\
~
t;;
"'%
~
t
~
'%
~ 1\ 1\
1.5
\ OC Tc - 25°C §
1,\ ffi 1\1\ ~
"~ 1.0 I\. ~
~
i'. I\.
" r-,.\'%
,(I -::;
.9 J "?
,:
~
" '"
~-
'........
0.5 i'l ~ ~
r-... ~ VCE~30V
1m OISTORlON <. j dB <Q.-
I ' r- t--- 1'--
10 20 30 40 50 60 70 80 10 20 30 40 60 80 100 200 300
VCE. COllECTOR· EMITTER VOLTAGE IVOlTS} f. FREQUENCY I MHz)
MAXIMUM POWER OUTPUT fOR GIVEN 1m DISTORTION LEVEL POWER OUTPUT versus OPTIMUM BIAS
30 30
~
f=30MHz
25 "- 25 MIN 1m DISTORTION- t--
~ II op~;a~ :~Sz} ~
\\ Tc~WC
........ \
~
i
t;;
20
VeE =
"- I"-
30 Vdc
~
t;;
20
_1 VeE -
.1
30 Vdc
15
~
15
"\ § \
~
j
10
- r- J"'..." VeE = 15 Vdc ,,\
i
~
10
~
1 VeE -15Vdc V
V
........ r- ~
o
20 25 30 35 40 45 10 15 20 25 30 35 40 45
1m. INTERMODULAllON DISTORTION I dB BELOW SIGNAl} Iclo,'I. OPTIMUM NO - SIGNAL COllECTOR CURRENT ImMel

30 MHz 4 MHz
30 60 30 60
,U5V1
, :.-' '1...t"" 1 /I
j...-i"""
to- 50 25
1
I
50
25
~ I I
,/ ',,130Vl
/
/' -P",130Vl
. ~
,
..
g . ...- i-""-- ~u
40 40
~
20 20
~ "1/
J J
V
MINIMUM 1m DISTORTION §
i
t;;
L
... ....-
~
§
I 15
II
30
§ 15
,130Vl.2'
....-1: .. V
30
ffi
~
J
10
I
1/,
V,
;
~
P",(15V1
20 I
"
ffi
~
J
10
-"r<: ,Cl5V1
If" V
/P",130YI
"
, 20 I"
10
/ V ~-" Pool Cl5V1
10
f. ./ " 1
'I' ~
o
o 1.0 2.0 3.0 3.5
0
"""'
0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18
o
P'" POWER INPUT (WATTS· PEPI P,•• POWER INPUT IWATTS· PEP)
2-481
2N3298 (SILICON)
NPN silicon annular transistor for power oscillator

applications to 150 MHz.
CASE 22
(TO.IS)
Collector connected to ces.

MAXIMUM RATINGS

(25°C Case Temperature) 1.0 Watt
Derate Above 25°C 6.67 mWrC

(25°C Ambient Temperature) 0.3 Watt
Derate Above 25°C 2mW/oC 2.0 mW/oC

stg
80 MHz OSCILLATOR POWER OUTPUT TEST CIRCUIT

12 pF
2N3298
~
R'
16K
RFC SOU
BOLOMETER
15 pF
l, - 4 TURNS #22 WIRE

2.7K ON 'I•• COIL FORM
-12V o-----e----..JV'..,.,..---.. . .
20U
2-482
2N3298 (Continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise notedl

Collector-Emitter BV CES I C =25 JlAdc, VBE=O 25 35 - Vdc
Breakdown Voltage
Collector- Emitter Open BV 111
Base Sustaining Voltage CEO(sus) I C =10mA, IB= 0 15 24 - Vdc
VCB =10Vdc, lE=O - 0.01 0.5

Collector Cutoff Current lCBO pAdc
VCB=lO Vdc, lE=O, T A =150°C - 10 50
Emitter Cutoff Current lEBO V EB =3Vdc, lC~O - - 10 pAdc
DC Current Gain hFE VCE= 1 Vdc, lC= 10 mAdc 60 90 120 -

AC Current Gain IhCe I VCE = 10 Vdc, IC= 10mAdc,f= 100 MHz 2.0 - - -
Collector Output Capacitance Cob VCB= 10 Vdc, IE=O, f=100kHz - 5.0 6.0 pF
Power Output P
out
f= 80 MHz
60 - 100 mW
VCC=12 Vdc
Efficiency 1/ lC(max) = 20 rnA 25 40 - %
(11 Pulse Width = 300 ps, Duty Cycle = 2%
NORMALIZED DC CURRENT GAIN h versus COLLECTOR CURRENT

600
versus AMBIENT TEMPERATURE
.I = 15V
V- Vel: j,
..".,... I--'
500
V ........ r
~ ........... i'.
VC~:= lOY
I.' I"'"
,,1
• _1 , •0 V ~ 400 r-....
1.4 - ~:10mAdC: ~
i".
/ ~
/
Vet: = 5V
'<
<>
"
<>
~ 300
/ or
<>
;
I fA = 25°C '\
"
1.0
I
•.. / "I
z
;c
'"i
200
I
,/
V 100
o.• o
-15 -51) -25 0 +25 +50 +15 +100 +125+150+175 o 10 20 30 40 50
T.l. AMBIENT TEMPERATURE «Ie)
2-483
NPN silicon annular transistors for high-speed

switching circuits and DC to UHF amplifier applications.
CASE 22
(TO-IS)
CASE 31
(TO-S) 2N3301
2N3302
2N3299
2N3300
MAXIMUM RATINGS
(Applicable 0 to 10 mAdc)
2N3299 2N3301
2N3300 2N3302
Total Device Dissipation @TA = 25° C PD 0.8 0.36 Watt
Derate above 25°C 4~56 2.06 mW/oC
Total Device Dissipation @T C = 25° C PD 3.0 1.8 Watts
FIGURE 1 - SATURATED TURN-ON SWITCHING FIGURE 2 - SATURATED TURN·OFF SWITCHING

TIME TEST CIRCUIT TIME TEST CIRCUIT
r- r-
+:n
""1
= 25Vdc
--j 300ns
Vee
IO I-'S
-15 Vdc Vee = 25 Vdc
o.:r---L 80
....- - 0 OUTPUT TO
500
80
OSCILLOSCOPE OUTPUT TO
500 500 OSCILLOSCOPE
Zi• .,100 kD
t,:;; 1.0 ns Zi. '" 100kD
t, :s; 1.0 ns
50
2-484
ELECTRICAL CHARACTERISTICS (T. = 2S"C un .... otIIerwiJe noted)

OFF CHARACTERISTICS
Colleetor-Emllter Breakdown Voltage,\1I BV CEO Vde
(IC = 10 mAde, IB = 0) 30 -
(IC = 10 !.LAde, ~ = 0) 60 -
(~ = 10 !.LAde, IC = 0) 5.0 -
Collector Cutoff Current ICES !.LAde
(V CE = 50 Vde, VBE = 0) - 0.01
(V CE = 50 Vde, VBE = 0, TA = 150·C) - 10

(V SE = 3. 0 Vde, IC = 0) - 10
Base Current IB nAde

(V CE = 50 Vde, VBE = 0) - 10
ON CHARACTERISTICS
(IC = O. 1 mAde, VCE =10 Vde) 2N3299, 2N3301 20 -
2N3300, 2N3302 35 -
(IC = 1. 0 mAde, VCE = 10 Vde) 2N3299, 2N3301 25 -
2N3300, 2N3302 50 -
(IC = 10 mAde, VCE = 10 Vde) 111 2N3299, 2N3301 35 -
2N3300, 2N3302 75 -
(IC = 150 mAde, VCE = 1. 0 Vde) III 2N3299 , 2N3301 20 -
2N3300, 2N3302 50 -
(IC = 150 mAde, VCE = 10 Vde)' 111 2N3299, 2N3301 40 120
2N3300, 2N3302 100 300
(IC = 500 mAde, VCE = 10 Vde) 111 2N3299, 2N3301 20 -
2N3300, 2N3302 50 -
VCE(sat)
(IC = 150 mAde, Ia = 15 mAde) - 0.22
(IC = 300 mAde, IB = 30 mAde) - 0.45
(IC = 500 mAde, IB = 50 mAde) - 0.6

VBE(sat)
(IC = 150 mAde, IB = 15 mAde) - 1.1
(Ic = 300 mAde, IB = 30 mAde) - 1.3
(IC = 500 mAde, IB = 50 mAde) - 1.5
Base-Emitter On Voltage Vde

VBE(on)
(IC =150 mAde, VCE = 10 Vde) - 1.1
(V CB = 10 Vde, IE = 0, f = 140 kHz) - 8. a
Input CapaCitance Cib pF

(V BE = 2. a Vde, IC = 0, f = 140 kHz) - 20

(V CC = 25 Vde, IC = 300 mAde, IBI = 30 mAde) - 60

(V CC = 25 Vde, IC = 300 mAde, IBI = IB2 = 30 mAde) - 150
111 Pulse Test: Pulse Width ~ 300 !.Ls; Duty Cycle ~ 2%.
2-485
2N3303 (SILICON)

speed, high-current switching and driving applica-
tions.
CASE 94
MAXIMUM RATINGS
Total Device Dissipation @ T A =25"C PD 0.6 Watt

Derate above 25°C 3.43 mW/"C

Derate above 25 ° C 17.2 mW/"C
Operating and Storage Junction TJ , Tstg -65 to °c

Temperature Range +200
ELECTRICAL CHARACTERISTICS ITA = 250C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Voltage· BVCEO • Vde
(Ie= 30 mAde, IB = 0) 12 -
(IC = 0.5 mAde, IE = 0) 25 -
Emitter-Base Breakdown Voltage BVEBO .Vde
('E= O. 1 mAde, Ie
=0) 4.0 -
Collector Cutclff Current· ICES /LAde
(VCE = 15 Vde, VBE = 0) - 100
Base Current IB /LAde

(VeE = 15 Vde, VBE = 0) - 100
.Pulse Test: Pulse Width = 300 /LS, Duty Cycle :S. 2%
2-486
2N3303 (continued)

ON CHARACTERISTICS
DC Current Gain hFE
(I C = 10 mAde, VCE = 0.5 Vde) 20 -
(I C = 100 mAde, VCE = 0.5 Vde) (11 30 -
(IC = 300 mAde, VCE = 0.5 Vde) III 30 120
(I C = 300 mAde, VCE = 0.5 Vde, TA = -55'C)(11 10 -
(IC = 10 mAde, IB = 1 mAde) - 0.25
(IC = 100 mAde, IB = 10 mAde) (1) - 0.23
(IC = 300 mAde, IB = 30 mAde) (11 - 0.33
(IC = 300 mAde, IB = 30 mAde, TA = 125°C) (11 - 0.50
(IC = 1 Ade, IB = 100 mAde) (11 - 0.70

(IC = 10 mAde, IB = 1 mAde) - 0.78
(IC = 100 mAde, IB = 10 mAde) (11 - 1. 10
(IC = 300 mAde, IB = 30 mAde) (11 - 1. 30
(I C = 1 Ade, IB = 100 mAde) (1) - 2. 1
Current -Gain - BandwIdth Product fT MHz
Output Capac itanee Cob pF
(VCB = 5 Vde, IE = 0, f = 140 kHz) - 15
(VBE = 0.5 Vde, IC = 0, f = 140 kHz) - 25

on
(V EB(off) ~ 4 Vde, IC ~ 1 Ade, IBI ~ 100 mAde) - 15

(IC ~ 1 Ade, IBI ~ IB2 ~ 100 mAde) - 25

s
(IC ~ 100 mAde, IBI ~ IB2 ~ 100 mAde) - 15
(11 Pulse Test: Pulse Width = 300 I1S, Duty Cycle So 2%
FIGURE 1 - TURN·ON AND TURN·OFF TIME TEST CIRCUIT FIGURE 2 - STORAGE TIME TEST CIRCUIT
VII Vee Vee Vee
-4.0V +12V +16V +5.ov
Ikll 1111 10011

PUlSE WIDTH" 100 lIS
::rL
r
1.0,.F 4711 PU~SE WIDTH> 100 ns 4711
_01:LI
PUlSE SOURCE
t,.=t,~l.Ons PUlSE SOURCE
~.~ lOll t,~ 1.0ns
PRf<IOOkHz ~. ~ 500
.,.. PRf < 100kHz
Ie:::::: lOOmA, 111:::::: -lIZ::::: lOOmA
2-487
2N3304 (SILICON)
PNP silicon annular transistor designed for low-

CASE 22
(TO·18)
MAXIMUM RATINGS
Collector-Base Voltage VCB 6.0 Vdc

Derate above 25°C 1. 72 mWjOC

Derate above 1000C 5.0 mWjOC
Operating & Storage Junction TJ, Tstg -65 to..200 °c

Temperature Range
2-488
2N3304 (continued)
ELECTRICAL CHARACTERISTICS IT A = 25°C unless otherwise noted)

CharacJeristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustainil1l Yoltage (" BVCEO(SU8) Vde
(Ie •10 mAde, 18 • 0) 6,0
Collector-Emitter Breakdown Voltage 8VCES Vde
(lC' 100#Adc, V8E • 0) 6.0 -
Collector-Base Breakdown Voltage 8VCBO Vde
(Ic' 100#Ade, IE • 0) 6.0 -
Emitter-Base SreakdoWD Voltale Vdc
(IE' 100#Adc, Ie • 0)
BVEBO
4 •. 0 -
Collector-Cutoff Current IcES ~Adc
(VCE • 3 Vde, V8E' 0) - 0.01
(VeE =3 Vdc, VSE '" 0, TA '" +1250 C) - 10
Base Current 18 nAde

(VCE • 3 Vde, V8E • 0) - 10
ON CHARACTERISTICS
DC Curren. Gain CII bn
(Ie • I mAde, VCE • 0.5 Vde) 15
(Ie • 10 mAde, VCE • 0.3 Vde, TA • • 55OC) 12
(Ie = 10 mAde, VeE'" 0.3 Vdc) 30 120
(lc • 50 mAde, VCE • 1.0 Vde) 20
Collector-Emitter Saturation Voltage VCE{...) Vde
(Ie • I mAde, 18 • 0.1 mAde) 0.15
(.Ie '" 10 mAde. IS"" 1 mAde. T A'" + 1250(:) 0.23
(Ie '" 10 mAde, IS '" 1 mAde) 0.18
(Ie = 50 mAde, IS '" 5 mAde) 0.5

(lc • I mAde, 18 • 0.1 mAde) 0.7 0,8
(Ie • 10 mAde, '8' I mAde) 0.8 1.0
(lC = SO mAde, IS '" 5 mAde) 1.5
OYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product 'T MHz
<Ie = 10 mAde, VeE = 5 Vdc, f = 100 MHz) 500

(VC8 • 5 Vde. IE • 0," 140 kHz) 3.5

(V8E • 0.5 Vde, Ie • 0, , . 140 kHz) 3.S
Turn...On Time (Figure 1) Ion nz

(Vee;; 1.5 Vdc. Vas = 6 Vdc, Ie "" 10 mAde, 80
]Bl '" ]B2 '" 0.5 mAde)
Turn-ott Time (Figure 1) lot, nB

(Vcc '" 1.5 Vde, IC '" 10 mAde, ]81 = ]82 = 0.5 mAde) 80
Charge-Storage Time (Figure 2) Is nz

Uc '" 10 mAde, VCC '" 3 Vdc, ]SI '" ]82 '" 10 mAde) 30
f 1) Pulse Test: Pulse Width '" 300 /.Ls; Duty Cyele = 2%
FIGURE I - TUIII·OI & TURN.fIFF TIME TtST CIRCUIT FIGURE 2 - CIIAlI8E·STOtIA8E TIME TEST r.!RCUIT
V... -lOY Vco=-3V
V•• =-6V
5kll
Vee =-1.5V
13111l
51111l
..."( 1
V,. = 5.0V
Pulse Width > lOOns
~.~5O!l
~.~<1.0ns
5kll TO SAMPLING SCOPE
IiI ~ lookQ
tr < I.Ons
d:l-ro.
Pulse Width > lOOns
1.. =5O!l
~"'l.Ons
511l
IW
TO SAMPLING SCOPE
111~loolcQ
~<1.0ns
2-489
2N3307 (SILICON)
2N3308
PNP silicon annular transistors for high-gain, low-

noise amplifier, oscillator, mixer and frequency mul-
CASE 20 tiplier applications.
(TO-72)
MAXIMUM RATINGS
Value
Rating Symbol Unit
2N3307 2N3308
Power Dissipation at TC = 25°C Po 300 mW

Power Dissipation at TA = 25°C PD 200 mW

storage Temperature Range T -65 to +200 °c

stg
COMMON EMITTER AVERAGE SMALL POWER GAIN

NOISE FIGURE versus FREQUENCY
& NOISE FIGURE versus COLLECTOR CURRENT
0
-
Ve,=-10 Vde - - TUNEDATle"'-2mAdeONlY.
t =200 MHz - - TUNED AT EACH TEST CURRENT.
I I
- "'.-,,,
5 I--
VcE =-15Vdc-
~
r-r-
0/ Vc ,= -5 Vdc
3
5 "
Nf
f..L
I" ~> ~ 1--- ......
-
0
~~ I 'r-..." 1'. Ie = -2 mAde
"~. "
5 RG =50 ohms
.......
-5
o -2 -4 6 -8 -10 -12 -14 -16 -18
0- 20
o
20 30 50 70 100 200 300 500
Ie, COllECTOR CURRENT ImAdel t, fREQUENCY IMHz)
2-490
ELECTRICAL CHARACTERISTICS ITA =25°C unless otherwise noted)

Collector-Base BV CBO IC = 10 !.lAde, IE =0 2N3307 40 - - Vde
Breakdown Voltage 2N330B 30 - -
Collector- Emitter BVCES IC = 10 !.lAde, VBE =0 2N3307 40 - - Vde
Breakdown Voltage 2N330B 30 - -
Collector-Emitter BVCEO IC = 2.0 mAde, IB =0 2N3307 35 - -- Vde
Breakdown Voltage 2N330B 25 -
Emitter-Base BV EBO IE = 10 !.lAde, IC =0 Both Types 3.0 - - Vde
Breakdown Voltage
Collector Cutolf ICBO VCB = 15 Vde Both Types - 0.001 0.010 !.lAde
Current =150 ·C
VCB = 15 Vde, T 2N3307 - 0.5 3.0
DC Current Gain hFE VCE = 10 Vde, IC = 2 mAde 2N3307 40 - 250 -
2N3~OB 25 - 250
Collector-Emitter VCE(sat) IC = 3 mAde, IB = 0.6 mAde Both Types - - 0.4 Vde
Saturation Voltage
Base-Emitter VBE(sat) IC = 3 mAde, IB = 0.6 mAde Both Types - - 1.0 Vde

Saturation Voltage
AC Current Gain = 10 Vde, = 2 mAde, f = 1 2N3307 40 - 250 -

hIe VCE IC kHz
2N330B 25 - 250
Output Capacitance. Cob VCB = 10 Vde, IE =0, I =O. 1 MHz 2N3307 - 1.0 1.3 pF
2N330B - 1.2 1.6
Collector-Base
Time Constant
r b 'ce VCB = 10 Vdc, IC = 2 mAde, I =31. B MHz 2N3307
2N330B
2.0
2.0 -
- 15 ps
20
Current Gain- IT VCE = 10 Vde, IC = 2 mAde, I =100 MHz Both Types 300 - 1200 MHz
Bandwidth Product
Maximum Frequency
of Oscillation
I
max VCE = 10 Vde, IC = 2 mAde Both Types - 2000 - MHz
Power Gain Ge VCE = 10 Vde, IC = 2 mAde, I = 200 MHz Both Types 17 - 24 dB
Noise Figure = ·2 mAde, I =200 2N3307 - 4.0 4.5 dB

NF VCE = 10 Vde, IC MHz
2N3308 - 5.0 6.0
Power Gain (AGC) •• G
e VCE = 5.0 Vde, IC = 20 mAde, I =200 MHz 2N3307
2N330B
-
-
- 0 -
0 dB
• Cob is measured in guarded circuit such that the can capacitance is not included.
•• AGC is obtained by lDcreasing Ie. The circuit remains adjusted for VCE = ... 10 Vdc, Ie = -2 mAde operation.
SMALL SIGNAL CURRENT GAIN versus FREQUENCY MAXIMUM AVAILAlLE GAIN VlrsuS FREQUENCY
50
Veo - -10 Vile Ve. =-10 Vdc
25
~ 40
iii:
~ ~
.........
t"t-- i ~ I:::::=::::
~ 30
~~. 2mAdc
! ~ ~2i
f--hI. _l!..
""-."l
~,
i. 20
MAG=~
41. I..
)~--~=::
y;.
1c~-5mAdc
~ ~ 10
5
'-
o
20 30 50 70 100 200
"'"300
............. f-
500
o
20 30 50 70 100 200 300 500
t: FREQUENCY (MHz) f. FREQUENCY (MHz)
2-491
PNP germanium power transistors for high-power

applications.
CASE 5
(TO·36)
Collector corinected to clse
MAXIMUM RATINGS
2H3311 2M3312 2N3313 Unit

Rating Symbol 2M3314 2M3315 2H331.
Collector-Base Voltage VCB 30 45 60 Volts
Collector-Emitter Voltage VCES 30 45 60 Volts
Collector-Emitter Voltage VCEO 20 30 40 Volts
Emitter-Base Voltage VEB 20 25 30 Volts
Collector Current (Continuous) IC 5.0 Amp
Power DisSipation at TC = 25 0 C PD 170 Watts
Junction Temperature Range TJ -65 to + 110 °c

Thermal Resistance 8JC 0.5 ·C/W
POWER· TEMPERATURE DERATING CURVE
~ 170 The maximum continuous power is

!. 150
~I'-.. related to maximum junction tempera-
~ 125
;:: i'--.. ture by the thermal resistance factor.
...c 100
This curve has a value of 170 Watts at
a
s... 75 '""'- .......
50 case temperatures of 25 0 e and is 0 Watts
l... 25 I'..... at llOoe with a linear relation between
...a i"""-... the two temperatures such that:
10 20 30 40 50 60 70 80 90 100 110
Te. CASE TE",PERATURE (OC)
allowable P D = 1100 - Tc
0.5
2-492

Characteristic Symbol I Min I Max I Unit I
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage* BVCEO* Vdc
(IC = 500 mAdc, IB = 0) 2N3311,2N3314 20 -
2N3312,2N3315 30 -
2N3313,2N3316 40 -
Collector-Emitter Breakdown Voltage* BV CES* Vdc
(IC = 300 mAdc, VBE = 0) 2N3311,2N3314 30 -
2N3312,2N3315 45 -
2N3313,2N3316 60 -
Collector Cutoff Current ICEO mAdc
eV CE = 10 Vdc, ~ = 0) 2N3311,2N3314 - 200
(V CE = 15 Vdc, IB = 0) 2N3312,2N3315 - 200
(V CE = 20 Vdc, IB = 0) 2N3313,2N3316 - 200

(V CE = 25 Vdc, V BE = 1. 0 Vdc, TC = 100°C) 2N3311,2N3314 - 35
(VCE =40Vdc, VBE = 1.0Vdc, TC = 100°C) 2N3312,2N3315 - 35
(V CE = 55 Vdc, VBE = 1. 0 Vdc, TC = 100°C) 2N3313,2N3316 - 35

(V CB = VCB max) - 5.0
(V CB = 2.0 Vdc, ~ = 0) - 0.3

(VBE = VBE max' IC = 0) - 4.0
ON CHARACTERISTICS
(I C = 500 mAdc, VCB = 2. 0 Vdc) 2N3311 thru 2N3313 - 150
2N3314 thru 2N3316 - 250
(IC = 3.0 Adc, VCB = 2.0 Vdc) 2N3311 thru 2N3313 60 120
2N3314 thru 2N3316 100 200
VCE(sat)
(IC = 3.0 Adc, IB = 300 mAdc) - 0.1

VBE(on)
(IC = 3.0 Adc, VCE = 2.0 Vdc) 2N3311 thru 2N3313 - 0.6
2N3314 thru 2N3316 - 0.5
Common Emitter Cutoff Frequency f(lie kHz
(IC = 3.0 Adc, VCE = 2.0 Vdc) 1.0 -
(IC = 3.0 Adc, VCE = 2.0 Vdc, f = O. 5 kHz) 2N3311 thru 2N3313 30 90
2N3314 thru 2N3316 40 120
*To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.
2-493
2N3311,2N3314 m "sec to 5 msee pulse)
10
~
~~
Ie PEAK j lms 25·50 ~s
5 m, 2501"
500 ~, SAFE OPERATING AREA
- lCI"'Ax] CONT.
./ ~\
)<. \\\\ \
Q.
~
/ \~\\ The Safe Operating Area Curves indicate the Ic-V CE limits
/1
~ l70·WATT AVERAGE ...../
below which the devices will not go into secondary break-
~
POWER OISSIPATION AT
25"C CASE TEMPERATURE down, As the safe operating are~s shown are independent of
a temperature and duty cycle. these curves can be used as long
'" ~C...! ~
~
as the average power derating curve is also taken into con-
sideration to insure operation below the maximum junction
o 0.5
u temperature.
.§ 0.4
0.3
0.2
o. 1
10 20 30 40
Ve<. COllECTOR·EM ITTER VOLT AGE (VOL TSI
2N3312. 2N3315 (25 f,LS to 5 ms pulse) 2N3313. 2N3316 (25 f,LS to 5 ms pulse)
10
10 r--le-p'TEA-K-"'J"~--I-m-Sr,-.:-
~~'T'~n'i:=-Tt---25-'5"lOr~-S---'
Ie PEAK
5m, ~I\~ t-- 250 "'
1
~\: -- 500",
Q.
"::!. ! 21--~~--r-~~~rr~~+-~
~
z
w
a'"'"
!
'"
/ -V "'\ DC
1 1---+--I---I---1----t---+---'<a-t---I
'" ~ l70·WATT AVERAGE ,
~8 0.5 I----t----t---+---~l--+_--__i
~
8 0.5
2~~~~~~Ni~~~I~ANT~~E
I---+--+----!r----t---+---t---I
~ 0.4 1---+---+---+---+"'-+---1 ~ 0.4 I---+--+---tf---+--+----t---I
0.3 1---1----1---+---+--'1--+---1 0.3 1--+--1--+--1--+--1---1
0.2 I---+---+---+---+_-t---j---__i 0,2 I---+--+-----jr----t---+----t---I
0.1 L -_ _L-_--'_ _--l._ _--J.._L--.L.._ _..j 0.1 '--_-.L.._ _'--_-.L.._ _'--_-.L.._ _L-_-'
o 10 20 30 40 50 60 o 10 20 30 40 50 60 70
Ve" COLLECTOR·EMITTER VOLTAGE (VOLTSI Veo. COLLECTOR·EMITTERVOLTAGE (VOLTSI
TEMPERATURE CHARACTERISTICS
leBO versus TEMPERATURE 130
100 G
~ 120
%
/1
- --
@ 110
/' Ie = -3 A
.J 100
Vo< - -2 V
/
~ 90
10
80
~ I
l-
I
~
70
.Q.
:;
OJ LO
/
-60 -40 ·-20 20
Te. CASE TEMPERATURE ( DC)
40 60 80
~
DC TRANSCONDUCTANCE versus CASE TEMPERATURE
J _ 130
I V
u
~ 120
V
--
0.1
@ 110
/1
./' Ie = -3 A
~ 100 VeE - -2 V
,01
o
.L
20 40 60
Te. CASE TEMPERATURE (DC)
80 100
~
o'i;
90
80
70
-60
f,---
-40
- -~
~
0 ~ ~
I
I
60 80
Te. CASE TEMPERATURE (DC)
2-494
2N3323 (GERMANIUM)
2N3324
2N3325
PNP germanium epitaxial transistors for FM RF,
CASE 22
IF, mixer and oscillator and AM RF, IF and converter
(TO-18) applications.
Collector connected·to cese
MAXIMUM RATINGS
Total Device Dissipation Pn

25°C Case Temperature 300 mW
Derate Above 25 ° C 4.0 mW;oC
Total Device Dissipation Po

25 ° C Ambient Temperature 150 mW
Derate Above 25°C 2.0 mW;aC
35 70
30
1\
'\.
II"""
, ,""" 60
25 "''''''
G,INEUTRALIZ£D)
so i
h,.
I 20 40 ;
POWER GAIN AND AC CURRENT GAIN versus FREIlUENCY 15
~ 15 30
~~
.......
10
'\. 20 .i
~
f-- I-~CE - 10 Ydc
Ic~ 3mAdc
'\. 10
.......
1.0 2.0
, ,""""""
4:0 6.0 10 20
.....
4D 60 100 200 400 600 1000
t, FREQUENCY I MHz)
2-495
ELECTR ICAL CHARACTERISTICS (TA =25°C unless otherwise noted)

Collector-Emitter
Breakdown Voltage
BVCER IC = 100/JAdc, RaE = 10K
.35 40 -- Vdc
Collector-Emitter
Current
ICES VCE = 35 Vdc, VBE = 0 -- -- 100 /JAdc
Collector Cutoff
Current
ICBO VCB = 10 Vdc, IE = 0 -- 0:5 10 /JAdc
Emitter Cutoff
Current lEBO \T EB = 2 Vdc, IC = 0 -- -- 100 /JAdc
DC Current Gain
hFE VCE = 10 Vdc, IC = 3 mAdc 30 -- 200 --
VCE = 10 Vdc, IC - 3 mAdc
AC Current Gain hfe
f = 1 kHz
30 -- 225 --
Current-Gain - VCE = 10 Vdc, IC = 3 mAdc
Bandwidth Product
fT
f = 100 MHz
200 -- 600 MHz
Collector - Base VCE = 10 Vdc, IC = 3 mAdc

Time Constant
rb'CC
f = 31. 8 MHz -- 50 100 ps
Output Capacitance VeB = 10 Vdc, IE = 0

Cob
f = 100 kHz
-- 2.2 3.0 pF
Maximum Frequency
of Oscillation
f
max
VCE = 10 Vdc, IC = 3mAdc -- 500 -- MHz
Input Resistance,
Parallel Equivalent
R.
Ie VCE = 10 Vdc, IC = 3 mAdc
-- 1200 -- ohms
Output Resistance, R f = 10 MHz -- 11 -- kohms

Parallel Equivalent oe
Input Resistance,
Parallel Equivalent
R.
Ie -- 100 -- ohms
VCE = 10 Vdc, Ic = 3 mAdc
Output Resistance,
Parallel Equivalent
R
oe
f = 100 MHz
-- 1.0 -- kohms
2M3323
Test Circuit Figure 1

Power Gain G
e VeE = 10 Vdc, IC= 3 mAdc 11 -- 15 dB
f = 100 MHz
2M3324
Test Circuit Figure 2
Power Gain G
e VCE '= 10 Vdc, IC = 3 mAdc 24 -- 31 dB
f = 10 MHz
2-496
FIGURE 1: 100 MHz POWER GAIN TEST CIRCUIT - 2N3323
~-lITU_#2IAWIS 3/16'"',D.
stJPPI.V TAP 7 TURf\lS FROM
COU£CTOR END.
NEUTllALIZATION-4TIIRNS.
3.12 pF
,,=500 7..., pF
. "' ....
r' r·
15-30 pF
2"·pF
"'0 3.g"M
.",.H
':"
'0
1· 1 1'F
"
FIGURE 2: 10 MHz POWER GAIN TEST CIRCUIT - 2N3324
51 pF
"=!iOO Io3S pF
1,.11
J
9-35 pF
1.,_24TUllftSOf#28AWGWIIE.
v,
lCMD T'I - 5 TUMS" COllECTOIlND
StI'I'lY TAP -15 TUINS FROM COllECTOR END
JlMJM.tZATION - , llMtIS
2-497
2N3330 (SILICON)
SILICON P-CHANNEL P-CHANNEL

JUNCTION FIELD-EFFECT TRANSISTOR JUNCTION FIELD-EFFECT
TRANSISTOR
(Type A)
Depletion Mode(Type AI Junction Field-Effect Transistor designed

primarily for low-power audio-amplifier applications.
• High AC I nput Resistance -

Typically> 30 Megohms@ f = 1.0 kHz
• Drain and Source Interchangeable
• Active Elements I solated from Case
~:;~: r-
OIA I
~o
MAXIMUM RATINGS
1_1'
Drain-Gate Voltage VDG 20 Vdc
0.500
Reverse Gate-Source Voltage 20 Vde MIN
VGSR
~~~: OIA
"'Gate Current
*Total Device Dissipation@TA = 25°C
IG
PD
10
300
2.0
mAde
mW
mW/oC
~
Derate above 2SoC
·Storage Temperature Range Tstg -65 to +200 °c
-Indicates JEDEC Registered Data. 0.100
Pin 1. Source
2. Gate
3. Drain
4. Case
0.028
0.048
TO-72
CASE 20 (51
2-498
2N3330 (continued)

OFF CHARACTERISTICS
Gate-Source Breakdown Voltage VIBRIGSS 20 - Vde
IIC = 10 /lAde, VDS = 01
Gate Reverse Current IGSS nAde
IVGS= 10Vde, VDS=OI - 10
IVGS = 10 Vde, VDS = 0, TA = 1500 CI - 10 /lAde
Zero-Gate Voltage Drain Current INote 1) IDSS 2.0 6.0 mAde
IVDS = -10 Vde, VGS = 0)
ON CHARACTERISTICS
Gate-Source Voltage VGS - 6.0 Vde
IVDG = -15 Vde, ID = 10/lAde)
Drain-Source Resistance rDS - 800 Ohms
liD = 100 /lAde, VGS = 0)
Forward Transadmittanee INote 1) IVfsl JJmhos
IVDS = -10 Vde, ID = 2.0 mAde, f = 1.0 kHz) 1500 3000
IVDS = -10 Vde, ID = 2.0 mAde, f = 10 MHz) 1350 -
Output Admittance IVosl - 40 JJmhos

IVDS = -10 Vde, ID = 2.0 mAde, f = 1.0 kHz)
Reverse Transfer Conductance Ivrsl - 0.1 /lmhos
IVDS = -10 Vde, ID = 2.0 mAde, f = 1.0 kHzl
Input Conductance IVisl - 0.2 J.Lmhos
IVDS = -10 Vde, ID = 2.0 mAde, f = 1.0 kHzl
I nput Capacitance Ciss - 20 pF

IVDS = -10 Vde, VGS = 1.0 Vdc, f = 1.0 MHzl
Common-Source Noise Figure NF - 3.0 dB
IVDS = -5_0 Vde, ID = 1.0 mAde, RG = 1.0 Megohm,
f = 1.0 kHz)

Notel: Pulse Test: Pulse Width ~ 630 ms, Dutv Cycle ~1 0%.
2-499
2N3375(SILlCON)\
2N3553
2N3632 * Collector Connected
to Case
2N 3961 • CASE 79 ·'·CASE 24 "·CASE 36 .. Collector electrically connected
(10·39) (10·102) (10·60) to case; stud electrically
2N3375 isolated from case
2N3553 2N3961 2N3632 * •• Stud electrically
Isolated from case
NPN silicon RF Power transistors, optimized for

large-signal power amplifier and driver applications to
400MHz, provide wide choice of power levels and guar-
anteed safe operating areas.
MAXIMUM RATINGS

Collector-Emitter Voltage VCEO .. 40 • Vdc
Collector-Base Voltage VCB .. 65 .. Vdc
Emitter-Base Voltage VEB .. 4.0 .. Vdc
Collector Current IC 1.5 1.0 3.0 1.0 Adc
Total Device Dissipation @ TC = 25·C PD 11.6 7.0 23 10 Watts

Derate above 25·C 66.4 40 131 57.2 mW;oC
Temperature Range
TJ , Tstg .. -65 to +200 • ·C
ELECTRICAL CHARACTERISTICS (TA =25'C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage* BVCEO(sus)* Vdc
(IC = 200 mAde, IB = 0) 40 .

(~ = 0.25 mAde, IC = 0) 2N3632 4.0 -
(IE = O. 1 mAde, IC = 0) 2N3375, 2N3553 4.0 -
(IE = 1. 0 mAde, IC = 0) 2N3961 4.0 -
Collector Cutoff Current ICEO mAde
(VCE = 30 Vde, IB = 0) 2N3375, 2N3553 - 0."
2N3632 - 0.25
Collector Cutoff Current ICEX mAde:
(VCE = 30 Vdc, VBE( ff) = 1. 5 Vdc, TC = 200'C)
o 2N3375, 2N3553 - 5.0
2N3632 - 10
(VCE = 65 Vdc, VBE(off) = 1.5 Vdc) 2N3375, 2N3553 - 1.0
2N3632 - 5.0
(VCB = 28 Vdc, ~ = 0, TA = 150'C) 2N3961 - 5.0
(VCB = 65 Vde, ~ = 0) 2N3632 - 0.5

2N3961
lEBO
- 1.0
mAdc
(V BE =4.0Vdc, IC =0) 2N3375, 2N3553 - 0.1
2N3632 - 0.25
* Pulsed tbru 25 mH inductor (See Figures 5 and 6).
2-500
2N3375, 2N3553, 2N3632, 2N3961 (continued)

Characteristic
ON CHARACTERISTICS
(IC = 250 mAde, VCE = 5.0 Vde) 2N3375, 2N3553, 2N3632 10 - -
(IC = 1.0Ade, VCE = 5.0 Vdc) 2N3632 5.0 - -
(Ie= 250 mAde, IB = 50 mAde) 2N3553 - - 1.0
- - 1.0

2N3375, 2N3632
VBE(sat)
--
Vde
(IC = 1. 0 Ade, IB = 5.0 Ade) 2N3632 - - 1.5
(IC = 100 mAde, VCE = 28 Vde, f = 100 MHz) 2N3553 - 500 -
(IC = 125'mAde, VCE = 28 Vdc. f = 100 MHz) 2N3961 350 -
(IC = 150 mAde, VCE = 28 Vdc, f = 100 MHz) 2N3375 - 500 -
2N3632 - 400 -
(VCB = 28 Vdc, IE = 0, f = 100 kHz) 2N3961 - 8.0 10
(VCB = 30 Vdc, IE = 0, f = 100 kHz) 2N3375, 2N3553 - 8.0 10
2N3632 - 16 20
FUNCTIONAL TESTS
2N3375
Power Input Test Circuit Figure 7 Pin - - 1.0 Watt
Common-Emitter Amplifier (VCE = 28 Vdc, Pout = 7.5 Watts,

Gpe 8.75 - - dB
Power Gain f = 100 MHz)
Collector Efficiency ~ 65 - - %
Common-Emitter Amplifier
(VCE = 28 Vdc, Pout = 3.0 Watts,
Gpe 4.77 - - dB
Power Gatn f = 400 MHz)
2N3553
(VCE = 28 Vdc, Pout = 2. 5 Watts,
Gpe 10 - - dB
Power Gain f = 175 MHz)
2N3632
Power Input Test Circuit Figure 10 Pin - - 3.5 Watts
Power Gain
(VCE = 28 Vdc, Pout = 13.5 Watts,"
Gpe 5.86 - - dB
f = 175 MHz)
2N3961
Power Gain
(VCE = 12.5 Vdc, Pout =2.0Watts,
Gpe 6.0 - - dB
RS = 50 ohms, RL = 50 ohms,
Collector Efficiency
f = 135 MHz)
~ 60 - - %
Common-Emitter Amplifier (VCE = 28 Vdc, Pout = 4.0 Watts, 9.0 - - dB

Gpe
Power Gatn
RS = 50 ohms, RL = 50 ohms,
f = 175 MHz)
2-501
2N3375, 2N3553, 2N3632, 2N3961 (continued)
POWER OUTPUT versus FREQUENCY

COMMON EMITTER - VeE 28 Vde, Tc 25°C = =
FIGURE 1 - 2N3375 FIGURE 2 - 2N3553
10
8.0
--
::---....
-......
I--
r-...
r---.... r--
- ....r-.. p,~~2hw
-r--- ..I.
"l" ':>c
I.SW-
i-"'"
Iiw
10
8.0
l"-.
~"
P" 1o.sw
OI375l
.............
I>-.
r--...
/" r-
.I
-- -
? ....... r--.. ..... ~
r- r--.
"-" .". .........
r-....."'" ~
/
/
VO.2S0W
-o.S~
o.ifw
/
............
r-
- ....... t-
....... i'-
..... r--.
0
~
.............
~o.osow
~
..........
r--.....
0
"
').....
~
O.1/ow
~/
~
."')< ......... ,
" ....... ........ r---" , .....
", .......
........
r-...: ~ .....
..... ::::::
1.0 o
100 ISO 200 2S0 300 400 SO 75 100 150 200 300 400
f. FREQUENCY (MHz) f. FREQUENCY (MHz)

40
10~========+======+=====+==~
p"I~\w
2.SW
20 2.JW En 6.01----":::O".....,.....-+-----=""""';::-..:::po;l~-...::::.;'-"-____l
E
~ 10 h:-I-- ---- :---::=:::: ~ :::::::::-...
~
5
- ---
~ 4.01------"""""""':t----"""""-::---f:.......;;:::-''=l
~ 8.0
5
co
a..~
6.0 r--- o.sw
4.0
- 1.0(
_/
./
./
. / r--... :--...
I 3.01------::....."i""''------==:.......;;:I----;;;-..e::...,''''''''':--I
co
~
l.SW ............ ~
.: 2.01------+-----+-----+-~
2.0
~
1.0L...._ _ _ _ _..I.-_ _ _....l-_ _--I._---..l
1.0
50 60 80 100 ISO 200 300 100 150 200 300
f. FREQUENCY (MHz) f. FREQUENCY(MHz)
BVCEOI,"" PULSE TEST CIRCUITS

FIGURE 5 - 2N3375. 2N3553. 2N3632 FIGURE 6 - 2N3961 TO
;--___.......,...., SCOPE
lOX PROBE PULSED@:l lOX PROBE VERT.
TEKTRONIX P6000 60Hz RELAY TEKTRONIX
OR EQUIVALENT 50%
1--------1
TO SCOPE VERT.
TEKTRONIXS03
DUTY
CYCLE
E~~~~L~~ TO TElITRONIX
S030R
OR EQUIVALENT EQUIVAlENT
UNIT
UNDER r-
TEST I
I
5.0 TO SCOPE HORIZ.
TO SCOPE
RElAY .... HORIZONTAL
SENSING
2-502
2N3375, 2N3553, 2N3632, 2N3961 (continued)
TEST CIRCUITS
2N3375
FIGURE 7 - 100 MHz FIGURE 8 - 400 MHz
4.0-40 pF
2·
STUB
TUNER
RS = 50n
3·
STUB 2N3375
TUNER
+2SV
500 pF
Ll: 3 turns No. 16 AWG wire 14"1.0 .• 5/16" long
L2: 5 turns No. 16 AWG wire 5/16"1.0 .• 7116" long
2N3553 2N3632
FIGURE 9 - 175 MHz FIGURE 10 -175 MHz
3.0-35 pF 3.0-35 pF RL = son
L1: 2 turns No. 16 AWG wire 3116" 1.0 .• 14"long Ll. L3: 4 tums No. IS AWG wire 14" 1.0. 3/16" long
L2: 2 turns No. 16 AWG wire 3116"1.0 .• 14"long L2: 1turn No. 16 AWG wire 14"1.0 .• 3/16" long
L3: 3 turns No. 16 AWG wire 3/S" 1.0 .• 3/S"long 4: 2% turns No. 16 AWG wire 14"1.0 .• 14"long
2N3961
FIGURE 11 -135 MHz FIGURE 12 -175 MHz
Cl .................. 1.0-12pF (Air Variable)

C,. C3 =5.0·60 pF (Air Variable) +12.5 V C2 .................. 1.0-30 pF (Air Veriable)
C2· 7.0-100 pF (Air Variable) C3 .................. 5.0-50 pF (Air Variable)
C4 = 1.0-30 pF (Air Variable) C4 .................. 7.0-75 pF (Air Variable)
C5 = 1000 pF (Disc Ceramic) C5 ..................470 pF (Disc Ceramic)
C6 • 0.02 ~F (Disc Ceremic) C6 ............... 0.001 ~F (Disc Ceramic)
Ll = 3 turns No. 16 AWG wire. 5/16"1.0 •• 5116" long Ll. L3. 4 ............................ 2 turns No. 18 AWG enameled wire
L2' 5 turns No. 16 AWG wire. 7116"1.0 .• 5/S" long 14" 1.0 .• air wound 3/16" long
L2 ........................................· RFC• QU<1
2-503
2N3425 (SILICON)
Dual NPN silicon transistor designed for use as a

high-frequency sense amplifier.

Pin Connections Bottom View
Case65~4 All leads Electrically Isolated from Case
TO-78
MAXIMUM RATINGS (each side)(TA = 25°C unless otherwise noted)


(R BE ~ 10 ohms)

stg
One Both.
Side Sides
Total Device Dissipation @ TA = 25° C PD 0.3 0.4 Watt
Derate above 25° C 1. 72 2.28 mWjOC
Total Device Dissipation @ T C = 25° C P 0.75 1.5 Watt

D
TC = 100°C 0.43 0.86 Watt
Derate above 25° C 4.3 8.55 mWjOC
FIGURE 1- SWITCHING-TIME TEST CIRCUIT

INPUT AND DUTPUT PULSE
V;, 5.0 k
5.0 k
..)
270
v...
t,.,
v.= -4.0Vdc
V;, = +21 V•.•
WAVEFORMS
V.. = +17Vdc
Vln = -20 Vp•p
°i~1 0.01
I' ToOSCILLOSCOPE
10%
" "
50
t'Jv~:n 20Vdc
., "~) +
V V;, rise time < 5.0 ns
i
Vi Vcc=3.0Vdc
1-
Capacitor values in ~F
Resistor values in ohms
2-504
2N3425 (continued)
ELECTRICAL CHARACTERISTICS (each side) (T, = 25'C unless oth.""se noted)
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (U BV CEO(sus) Vde
(lC = 10 mAde, IB = 0) 15 -
Collector-Emitter Sustaining Voltage" (1) Vde
BV CER(sus)
(IC = 30 mAde, RBE ~ 10 ohms) 20 -
(lC = 10 !lAde, IE = 0) 40 -
(IE = 10 !lAde, IC = 0) 5.0 -
·Collector Cutoff Current ICEX !lAde
(V CE = 20 Vde, VEB(oll) = 0.25 Vde, T A = 125' C) - 15
Collector Cutoff Current ICBO uAde

(V CB = 20 Vde, IE = 0) - 0.025
(V CB = 20 Vde, IE = 0, T A = 150'C) - 15
Emitter Cutoff Current lEBO uAdc

(V EB' = 4.0 Vde, IC = OJ - 0.2
ON CHARACTERISTICS

(I C = O. 5 mAde, VCE = 1. 0 Vde) 12 -
(IC =10 mAde, VCE = 1. 0 Vde) 30 120
(IC = 10 mAde, VCE = 1. 0 Vde, T A = -55' C) 12 -
VCE(sat)
(IC = 10 mAde, IB = 1. 0 mAde) - 0.4
(Ie = 7.0 mAde, IB = O. 7 mAde, TA = -55'C to +125'C) - 0.5

VBE(sat)
(IC = 10 mAde, IB = 1. 0 mAde) 0.7 0.85
(IC = 7.0 mAde, IB = 0.7 mAde, TA = -55'C) - 0.9
Cob
(V CB = 10 Vde, IE = 0, I = 140 kHz) - 6.0

(V BE = 0.5 Vde, IC = 0, I ~ 140 kHz) - 9.0

(IC = 10 mAde, VCE = 1. 0 Vde, 1= 1. 0 kHz) 20 -
Real Part of Input Impedance Re(h ie ) Ohms
(IC . = 10 mAde, VCE = 10 Vde, I = 300 MHz) - 50

=10 mAde, =3. 0 mAde) on
(V CC c 3 ..0 Vde, VEB(off) = 2,0 Vde, IC IBI - 50
Turn-Off Time (Figure I) toff ns

(V CC = 3.0 Vde, IC = 10 mAde, IBI =3. 0 mAde, IB2 =1. 0 mAde) - 90

(IC =10 mAde, IBI =10 mAde, IB2 =10 mAde) s
- 40
m Pulse Test: Pulse width ~ 300 us, duty cycle ~ 1%

"A"
v," 890
500
k
If
0.1 500 .. 91
+ 6.0 Vdc
0----- -rr-
10%
PULSE AT POINT "A"
O~
.,0.0025 0.002\
,
-4.0Vdc ----f---'.....- - -
.I TO OSCILLOSCOPE
.'-
~~
z.= 50 n Z'"~ lookn
68 t ,;,; 5.0 ns
1~ ~~
+ ,\. +
" Voo rise time < 5.0 ns
-:t T- Capacitor values in /IF
Resistor values in ohms
V" ~
11 Vdc 7 Vee = 10 Vdc
2-505
2N3427, 2N3428 (GERMANIUM)
PNP germanium transistors for audio amplifier and

medium-speed switching applications.
CASE 31(11
(TO.5)
All leads isolated
from case
MAXIMUM RATINGS

Collector Current (Continuous) IC 500* mAdc
Base Current (Continuous) IB 50* mAdc
Storage and Operating Temperature

Range T stg ' TJ -65 to +100 °c
Collector Dissipation,Ambient PD 200 mW

Derate Above 25°C 2.67 mWrC
* Limited by power dissipation
2-506

Collector-Base Cutoff Current I CBO /lAde
(V CB = 1. 5 Vdc, IE = 0) - 3.0 5.0
(V CB = 10 Vdc,
= 0, TA = +71 °C)
IE - - 100
(V CB = 30 Vdc, IE = 0) - - 10
(V CB = 45 Vdc, IE = 0) - - 50
Emitter-Base Cutoff Current lEBO /lAde

(V EB = 30 Vdc, IC = 0) - 3.0 10
Collector-Emitter Leakage Current ICER /lAde

(V CE = 30 Vdc, RBE = 10K ohms) - - 600

(Vn = 1. 0 Vdc, VTVM impedance i!; 1 megohm) 30 - -
(V CB = 6 Vdc, IE = 0, f = 1 MHz) - 10 20
Noise Figure NF dB
(V CE = 4.5 Vdc, IE = 0.5 mAde, R,s = 1 K ohms, f = 1 kHz •
.M =1 Hz) - 5.0 10
Small-Signal Current-Gain Cutoff Frequency fll!b MHz

(V CB = 6 Vdc, IE = 1 mAde) 2N3427 4.0 6.0 -
2N3428 5.0 8.0 -
(V CB = 6 Vdc, IE = 1 mAde, f = 1 kHz) 25 - 35

(V CB = 6 Vde, IE = 1 mAde, f = 1 kHz) 0.05 - 0.50
Small-Signal Current Gaill hfe -

(V CE = 6 Vde, IE = 1 mAde, f = 1 kHz) 2N3427 200 325 500
2N3428 350 475 800

(V CE = 6 Vde, IE = 1 mAde, f =2 MHz) 2N3427
Ihfel 2.0 - 7.0
-
2N3428 2.5 - 8.0
(IC = 20 mAde, V CE = 1 Vde) 2N3427 150 275 -
2N3428 250 375 -
(IC = 100 mAde, V CE = 1 Vde) 2N3427 100 210 350
2N3428 150 260 400
(IC = 200 mAde, V CE = 1 Vdc) 2N3427 75 - -
2N3428 125 - -
Base-Emitter Input Voltage V BE Vde
(V CE = 1 Vde, IC = 100 mAde) - - O. 5
Collector-Emitter Saturation Voltage VCE Vde

(IC = 100 mAde, IB = 2 mAde) 2N3427
(sat)
- 0.155 0.200
2N3428 - 0.150 0.190
(IC = 200 mAde, IB = 4 mAde) 2N3427 - 0.220 0.300
2N3428 - 0.200 0.280
2-507
POWER·TEMPERATURE DERATING CURVE COLLECTOR CURRENT "rsus BASE CURRENT
,
220 200
200 180
/ V
u; I'\. 8JC = 0.25°C/mW VeE =IV
/. /
to- 180 2N3428
\ /
" '" i
!;c 160
:I:
::: 160 / . ~3427
~ 140
r\: ~
::l
140
./ //
z: i'-.. -..;; ~ 120
0 120
V'
:;; V/
~
0. 100
I'\: ~
100
/. V
in
'"0
8J. = 0.375°C/mW"",- '\ ~ 80
80
V/
'"~
0
0.
60
40 '" """ I\.
I
.Y
60
40
h
~
20
,~
20 ~
o "\ oV
o w m ~ ~ w w ro w ~ ~ o 0,2 0,4 0,6 0,8 1.0 1.2 1.4
I,.BASE CURRENT {MILLIAMPERES)
TEMPERATURE (OC)
OUTPUT CURRENT versus BASE DRIVE VOLTAGE DC CURRENT GAIN "rsus COLLECTOR CURRENT
200 400
Ve ,= 1V / / 360 t'..... v',= IJ
2N3427 ;/ / 300
i'-..
)7 ~ 260
i'-- . . . r-., 1'---.2N3428
7 7,2N3428
I 200
.............
2Ni';v-- t.......
II g
J
160
""'"-
--- r-
r-- t--
W 100
~ 60
~
~
o oo ~ ~ ~ ~ ~
o 0.1 0,2 0,3 0,4 0,$ 0,6 20 40 60 80 200
vEO. EMITTER-8ASE VOLTAGE (VOLTS) Ie. COLLECTOR CURRENT {MILLIAMPERES)
2-508
2N3439 (SILICON)
2N3440
NPN SILICON HIGH VOLTAGE POWER TRANSISTORS

· .. designed for use in consumer and industrial line·operated 1 AMPERE
applications. These devices are particularlv suited for audio, video POWER TRANSISTORS
and differential amplifiers as well as high·voltage, low·current NPN SILICON
inverters, switching and series pass regulators.
• High DC Current Gain - 250-350 VOLTS
hFE=40·160@lc=20mAdc 10 WATTS
• Current·Gain-Bandwidth Product -
fT = 15 MHz (MinI @ IC = 10 mAdc
Cob = 10 pF (Max) @f = 1.0 MHz
• MAXIMUM RATINGS
Collector-Em,tter ¥oltage
ColleCTor-Base Voltage
VCEO 3SO I 250 Vdo
Ve. 450 300 Vdo
Emitter-Base Voltage VEe 7.0 Vdo
___(;ollector Current - Continuous 'e 1.0 Ado
Base Current
Total Device DisSIpation @I T A "- 25°C '.
Po
0.5
1.0
Ado
Watts
Total Device OISSiPOltlon@TC-25OC Po 10 Watts
Derate above 25°C 0.057 w/oe
Operating and Storage Junction Temperatura TJ, T$19 -65 to +200 oc
Range
CharacterBtic
::::~ ~
Thermal Resistance, Junction to Ambient
I
ELECTRICAL CHARACTERISTICS ITe-
'::;~{IT
250 C unless OlherWISI' noted)
I Charac:taristic Symbol Min Mox Unit

OFF CHARACTERISTICS
·Collector-Emitter Sustaining Voltage (1) VCEO(sus) Vdo
(lC" 50 mAde, 18" 0) 2N3439 350
2N3440 250
Collector Cutoff Current ICEO ,Ad,

(VCE " 300 Vdc, IS "0) 2N3439 20
(VCE '" 200 Vdc, IS '" 01 2N3440 50
Collector C"'toff Current
~II~
ICEX ,Ado MIN
(VCE = 450 Vde, VSE(off) .. 1.5 Vdel 2N3439 500
(VCE = 300 Vdc, VSEloff) = 1.5 Vdel 2N3440 - 500
-Collector Cutoff Current STYLE I
(VCS .. 360 Vdc, IE .. 01 2N3439 ICBO 20 ,Ad< PIN I. EMITTER
(VCS .. 250 Vdc, IE "01 2N3440 2P 2. BASE
3. COLLECTOR
-Emlttat Cutoff Current IESO 20 ,Ad,
lYse" 6.0 Vde, IC .. 0)
ON CHARACTERISTICS (1)
DC Current Gain hFE
(Ie· 2.0 mAde, VCE" 10 Vdel 2N3439 30
-lie = 20 mAde, VeE'" 10 Vdc) Both Types 40 160
·Colleetor·Emlttar Saturation Voltage VCElsatl 0.5 Vdo
(lC • 60 mAde, 'S .. 4.0 mAde)
Sase·Emitter Saturation Volta. VSE(sat) 1.3 Vd,
(lC .. 50 mAde, la .. 4.0 mAde)
"DYNAMIC CHARACTERISTICS
Currant·Gain - Bandwidth Product tT 15 MH,
(lC = 10 mAde, VeE'" 10 Vde)
Output Capacitance Cob 10 OF
lYCB '" 10 Vde,le "O,t .,.0 MHz)
Input Capaeitanal 75 OF
(VES =6.0 Vdc,lC =0, f =. 1.0 MHz) Cib
Small1ignal Current Gain ht. 25
lie'" 5.0 mAde, VCE '" 10 Vtk:, f '" 1.0 kHz) All JEDEC dimensions and notes apply
Rql Part of Common Emitter SmaIl-5iFlal Re(hle' 300 Oh....
Short-Circuit I nput Impedance
(VCE" 10 Vde, IC = 5.0 mAde, f = 1.0 MHz I CASE 31
·'nd,catesJEOEC Reg,stared Data.
TO·5
(1) P",I_Tast: P",llaWldth,.300j.l.s. Duty Cyc'a~2.0%.
2-509
FIGURE 1 - DC CURRENT GAIN FIGURE 2 - SATURATiON REGION
300 u; 1.0
200 +j~\~OOC - ~ 1\ 1\ TJ = 2SoC
z 100
n "- '"
~
w
<.0
0.8
\
\
I\ I II
200 rnA
<1
<.0 2S OC ~ 100 rnA
~ SO '"> 0.6
~ 30 ~. ffi
::
SOmA
\
'--
~ 20
..--:: \'
~ 0.4
20 rnA
1\ \
~\
c p..-= .... a: \[C=10m~ \
~ ~
10
~
_ 0.2
r-., I'...
r--.
"-
---
VCE 2.0 VOLTS
S.O
3.0
O.S
I IIII
1.0
VCE I 101 V~Lr~
2.0 S.O 10 20 SO 100 200 SOO
'"'-'
>
~ 0
0.1 0.2 O.S 1.0
-- 2.0 S.O 10 20 SO 100
IC, COLLECTOR CURRENT (mAl ,IB, BASE CURRENT (mAl
1.0
TJ=2S oC II II I G
3;
+0.8
IIIII
JOV~ f~r ~CIE:S;tl
2~OC \0 js~ot Jt./
0.8 II II II ,.......... .5
+0.4 - )-
......-r.~
I I II l i l t
V '" ssoc to 2S0C _
- VBE(sat! @IcllB 10
~ III I
'"~
I-
O. 6
G
~ -0.4 I-- 'Applies lor ICIIB'; hFE/S
~
w
<.0
VBE(onl@VCE= 10V
/ 8
« ~ -0.8
~ 0.4
=>
/
-
'">
IC!IB =110 V ~ -1.2
,.....-
0.2
VCE(sat! .1.-1- ~ -1.6 r-- - eVB 10rVBE
f.- I-
o
2.0 3.0 S.O 10
I
20 30
Ic/lB - S.O
so 100 200
:>
'" -2.0
2.0 S.O 10 20
--- to- f- SO 100 200
IC, COLLECTOR CURRENT (mAl IC, COLLECTOR CURRENT (/AI
FIGURE 5 - EFFECTS OF BASE-EMITTER RESISTANCE FIGURE 6 - CUT -OFF REGION

100
,, VCE - 200 V
r==VCE 200 V
.- IC= Sx ICES
"
.3 10
", " .,
I- ~TJ=150oC
7
~
=>
~ ."- ~. 1.0
" ", '" F ICES
~
=IC-2xICES 1000C
-
1
" "","-
8 o. 1
= t=IC ~ ICES ~
~ FRev,orse Forward::::::::
~
:....
40 80
" 120
. . . =---
160 200
0.0 1
+0.4 +0.3
2SoC
+0.2 +0.1 -0.1 -0.2 -0.3 -0.4 -O.S -0.6
TJ,JUNCTION TEMPERATURE (OCI VBE, BASE·EMITTER VOLTAGE (VOLTSI
2-510
FIGURE 7 - TURN-ON TIME FIGURE 8 - TURN-OFF TIME
0.4 3.0
"-., ~CC' 15ri Volts
-
t'.., tr@le/IB' 10 VCC 150V-
--t-r-.I
--
0.3
"- 2.0 TJ = 250C-
"""""- "-", ~
td@VBE(off)' 5.0 V TJ'250C -
0.2 tsl@IC/I~~ 5.cito io
........ / IC/IB=lO I ~
1.0
]
"' O. 1
~ ~~
] 0.7
'" 0.07 ,, ,
S
0.03 f--td
/
0.05 r-tr@ ICIIB = 5.0
~ VBE(;ff) = 5.0 V./

ICIIB = 5.0
....... ~
"""" ' ......
"-..
,
/
/
........
~
>=
0.5
0.3
0.2
...........
~
- .......
tl@ICIIB=10
_ L'
........
r---
r--
tl@IC/IB= 5.0- f - -
--
.,/'
0.02 ......
1.5 I I ......... O. 1
10 20 30 50 70 100 200 10 20 30 50 70 100 200
IC. COLLECTOR CURRENT (rnA) IC. COLLECTOR CURRENT (rnA)
FIGURE 9 - SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 10 - CURRENT-GAIN-BANDWIDTH PRODUCT
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

20 50 10 20 50 100
PW=lO",
Duty Cycles"" 1.0%
tr = 1.0 ns
To Scope t;
=>
c
~
50
IC 10 rnA
,./
/~
ITVi\'CE
- r\
~ 30 / fTVS Ie
c
i< / /' VCE' 10 V
Turn-on Test: V2 = 5.0V c T = 250C
51 o //
Turn-off Test: V2 8.DV 51 ~ 2
1
">;:
(Adjust for IBl = IB2) z

;;:
I
-5.0V ':'
Diode Used For
Turn-off Test Only
'"
....
::5
'" 10
Note: Vee and RC adjusted for VeE(off) = 150 V and Ie as desired, '"=>
AB chosen for desired IS1. Vl "" lOY. ~ 7.0
1.0 2.0 5.0 10 20 50 100
IC. COLLECTOR CURRENT (rnA)
FIGURE 11 - OUTPUT ADMITTANCE FIGURE 12 - CAPACITANCE
2.0 100
I-- - VJE 30V ~ 70 ib

TJ 25 0C
TJ = 250C
./"" 50
"
..3
"'
u
z
«
1.0
0.7
./
~
"'
30
f-
f- 0.5
u
z 20 ::::::
:;; «
....
~ f:::::
c e;
« ;;:
f-
0.3
./ Cob
~ ;3 10
f-
=>
c 0.2
r- 7.0 Ccb
.g I-
:>: 5.0 (C~)
"
0.1 3.0 ............
5.0 7.0 10 20 30 50 70 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC. COLLECTOR CURRENT (rnA) VR. REVERSE VOLTAGE (VOLTS)
2-511
FIGURE 13 - TYPICAL THERMAL RESPONSE
I- 1. 0
~ o. 71 0-0.5
~ o. 5
,..-
fnn
::; ~ o. 3 0.2
p
~:i I- eJc(I) - r(I) eJC
~~ o. 2 t-- - eJC 8.5 "CIW TYP
0
0.1 :;:::::j:::'
~ ~ 0.1 1 - - - c- 0.05
c:;:
~ b o CURV~S APPLY FOR POWER
_PULSE TRAIN SHOWN
~ ~o.o7 0.01 ~f--! SINGLE _READ TIME AT 11

t 2 _ PULSE -TJ(pkl TC P(pkl eJC(t)
~ ~o.o 5
DUTY CYCLE, 0 I1/t2
~I
o
z
0.03 V 0 1 0 rSintn'ie\
t 0.02
0.0 1
0.01 0.02 0.03
I 0.05
III 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (m,1
FIGURE 14 - ACTIVE-REGION SAFE OPERATING AREA FIGURE15- POWER DERATING
1000 0
_ 500
«
5.0 ms
5001JS~
501JS~
10 IJS
1= -'" ~
1.Um'~Kl~i"< t- 0
~ 30o
z
20 o t'-.
t-
'\ I"'"
~ i"--
'"=>
~ 100
o
TJ';; 200 0 C ~c '\ 1\1\ 0
t-..,
t; Second Breakdown limit 0 ~
~ 50 - - Bending Wire Limited ""
8
!;}
01-- -
o
I I III
1111
- Thermally Limited (T C o25 0 CI
I I I I II
Curves apply below
rated ~CEO(fu,' I
I
2N3440-r- 0
"~
2N3439-+- t-
O
5.0 10 20 30 50
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTSI

100 200 300 500
0
40 80 120
TC, CASE TEMPERATURE (OCI

160
"'"
200
There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 14 is based on TJ(pk) = 200o C; TC is variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided T J(pk) =200oC. T J(pk) may be calculated from the. data in Figure 13. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown. (See AN-415)
2N3444 (SILICON)
2-512
CAS~
NPN silicon power transistors for switching and amplifier
applications requiring fast response, wide band and good
Beta linearity.
(TO-3)
MAXIMUM RATINGS
Rating Symbol 2N3445 2N3446

2N3447 Unit
2N3448
Collector-Base Voltage VCB 80 100 Volts
Collector-Emitter Voltage VCEO 60 80 Volts
Emitter-Base Voltage VEB 6.0 10 Volts
Power Dissipation PD 115 Watts
Junction Operating Temperature Range TJ -65 to +200 °C
~j :~i""I:-Mlit@gl
POWER-TEMPERATURE
DERATING CURVE
These transistors are

also subject to safe area
curves. Both limits are o 25 50 75 100 125 150 175 200
applicable and must be To CASE TEMPERATURE ("C)
observed.
10 -2N3445, 2N3447 2N3446, 2N3448

The Safe Operating Area
7.0 Curves indicate Ie - V CB
5.0
...... , '- , limits below which the device
<C
'"
5
3.0
2.0 DC ...... "........ \ - t-OC~ " will not go into secoD9ary
breakdown. Collector load
~ ",A ,\
~
i
::>
'"'"
1.0
0.7
O.S
Sms
-- ~
Ims
\ Sms
Ims
'" lines for specific circuits must
fall within the applicable Safe
Area to avoid causing a· col·
0
0.5ms lector-emitter short. (Duty
~ 0.3
cycl.e of tbe 'excursions make
;~251~1~
0.2 -"2S0;' " '
0
no significant change in these
'"..? 0.1 ~' safe areas.) To insure opera-
TJ ...:::::::175°C
0.07 ~ - - - TJ 2SOC
E TJ ..::::::175OC
tion below the maximum T J ,
- - - TJ 25°C
0.05 the power-temperature de-
0.01 ·1._....I._.....I_......L..._"-_.........;,1 -( ( rating curve must be ob·
o 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 served for both steady state
Ve., COLLECTOR·EMITTER VOLTAGE (VOLTS) and pulse power conditions.
2-513
Cbll1CIerlstlc Symbll MIl T" lu U.H

Emitter-Baae Cutoff Current lEBO mAde
(VEB' 6 Vdc) 2N3445, 2N3447 - - 0.25
(VEB = 10 Vdc) 2N3446,2N3448 - - 0.25
Collector-Emitter Cutoff Current leEX mAde
(VCE • 60 Vdc, VBE • -I Vde) 2N3445,2N3447 - - 0.1
(VCE • 60 Vdc, VBE = -I Vde, TC • ISOoC) 2N3445,2N3447 - - 1.0
-- -
(VCE • 80 Vde, VilE' -1 Vdc) 2N3448,2N3448 0.1
(VCE • 80 Vde, VilE' -1 Vde, TC • 1500 C)
Collector-Emitter Cutoff Current
2N3448,2N3448 - 1.0
mAde
leEO
(VCE • 40 Vde, I B ,. 0) 2N3445, 2N3447 - - 1.0
(VCE' 60 Vde,IB • 0) 2N3446, 2N3448 - - 1.0
Collector-Baae Breakdown Voltage BVCBO Vde
(IC • 1 mAde, IE' 0) 2N3445, 2N3447
2N3446, 2N3448
80
100
-- --
Collector-Emitter Sustaining Voltage Vdc
(Ie • 100 mAde, lB' 0) 2N3445, 2N3447
VCEO(sue)
60 -- -
2N3446, 2N3448 80 -
DC Current Gain hFE
(Ie • 0.5 Ade, VCE • 5 yde) 2N3445, 2N3446 20 45 -
(Ie • 3 Ade, VCE • 5 Vde)
2N3447,
2N3445,
2N3448
2N3446
40
20
85
40
-60
(Ie' 5 Adc, VCE • 5 Vde) 2N3447, 2N3448 40 75 120
Collector-Emitter Saturation Voltage VCE (sat) Vde
--
(Ie • 3 Ade, IB • 0.3 Ade) 2N3445, 2N3446 0.6 1.5
(Ie • 5 Adc, IB • 0.5 Ade) 2N3447, 2N3448 0.8 1.5
(IC' 3 Adc, IB • 0.3 Ade) 2N3445; 2N3446 - 1.0 1.5
(Ie ~ 5 Ade, IB • 0.5 Ade) 2N3447, 2N3448 - 1.0 1.5
(Ie = 3 Ade, VCE • 5 Vde) 2N3445, 2N3446 - 1.0 1.5
(Ie • 5 Ade, VCE • 5 Vde) 2N3447,.2N3448 - 1.0 1.4
hre
(VCE' 10 Vde, Ie • 0.5 Ade, f • I kHz) 2N3445, 2N3446
2N3447, 2N3448
20
40
-- 100
200
(VCE' 10 Vde, Ie • 0.5 Ade, f • 10 MHz) 1.0 1.6 -
Common Base OUtput Capacitance Cob pF
(VCB' 10 Vde, f . 0.1 MHz) - 260 400
Switching Times p..
(VCC" 25 Vde, RL • 5 ohms, Ie • 5 A, IBI • IB2 • 0.5 A)
Delay Time plus RiJJe Time td +tr - 0.15 0.35
Storage Time t. - 0.9 2.0
Fall Time It - 0.15 0.35
COLLECTOR CURRENT versus BASE CURRENT
10 10
....
5.0 ~ 2N3445, 2N3446
t-
t- VeE 5V
5.0
r=
t-
: 2N344'j:'2N3448
~ 2.0 c:-
~ 2.0
:5
.... 1.0 / +25°C :5
.... 1.0 ~? :OC
~ 0.5 i"i:l 0.5

i:l
""0 ""
~
1/ /
~
0.2 0.2
0 0.1
+ 175°C I -40°C .7~ / ,- 'C
<.>
0
<.> 0.1
.2 .2
0.05 0.05
0.02 0.02
0.01
V
. 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5001000
I., BASE CURRENT (rnA)
2-514
CURRENT GAIN VARIATIONS

50
r-- 2N3~45. 2N3l46
z
...~
40
---- ---
VCE = 5V
~ -- +25 O C
--- ..............
........
.........
- ----"
3D
----
i
:::>
~ I--
40°C
......
'"• 20
~ r- !'--or-.
10
o
0.1 0.2 0.3 0.4 0.5 0.7 1.0 2.0 3.0 4.0 5.0 7.0 10
100
z
:c
...
co
80
60
I--- 2N3~47, 2N3J48
r-- --
VcE =5V
~
- -- +25°C
-""'" ...........
........
..........
r-..
"
-
~0:
:::>
40°C
'" 40
J ~
........
20
o
0.1 0.2 0.3 0.4 0.5 0.7 1.0 2.0 3.0 4.0 5.0 7.0 10
COLLECTOR·EMITTER SATURATION VOLTAGE VARIATIONS

i 1.4 ! I \ I ,
!
\
\...
I \ \
\
I
w 1.2 lie =IO.3 IA \ le;;-IA le= 3A Ie = SA
~ ....... \
......
X ~
~
is 1.0
~ V
, ,
V \
\
'v\'
f',.
i
:::>
~
0.8
"
\
It
1\ \
, , '\.
'.
",
I.....
i'
'. ........
,
0:
~ 0.6 '\ "
!
o 0.4 "
,
"
'\.. ..... " ......-
.~
~
~
8 0.2 -
TJ=25°C
2N3445, 2N3446
I\.
~.:-::--
- -
.....
"-
~
......
-
J 0
1
- - - 2N3447, 2N3448
10 20 3D 50 70 100 200 300 500 700 1000
I•• BASE CURRENT (mA)
2-515
COLLECTOR CURRENT·VOLTAGE BASE CURRENT·VOLTAGE

VARIATIONS VARIATIONS
10 300
7.0 =VeE 200 1 / //
SV
5.0
/ 100
VeE = 5V
/ ~
"-
3.0 / / V ;;,- 70
'"
~
>-
2.0 / / I .§.
>-
50
i
u
1.0
+ 175 C/ +25°CI
0 j-40 0 C ~
a
30
20
/' ~
I
f
'"
~8
~
+175 0 C / +25 0 C! / -40°C
0.7 ~ 10
0.5 -
-2 0.3 I I
0.2 I I II I I
0.1
0.2
/ 0.4 0.6
I
0.8 1.0 1.2 1.4 0.2
I
0.4 0.6
I I
O.B 1.0 1.2
V", BASE·EMITTER VOLTAGE (VOLTS) V", BASE-EMITTER VOLTAGE (VOLTS)
TYPICAL SWITCHING TIMES

10,000 TEST CIRCUIT
1==1" I" le l10 -OJ 1.....1 30
,,5 Ie = SA, I" = I" 0.5A =
:.Lrf
5000
l- V" OV +115V~ I ~- f=150Hz DUTYCYCLE=2%
WAVE SHAPE +30V
i
~
2000
1000 -~ I--I -
--.+..-
j
-9V
AT POINT A
5n
-
1..-1 4.8 4W
'"
;: 500 .-1.7ms
0"
ms
'"x
z lOOn
~
~
200
- I, ~ f-.... 1W
100 I,~ ~ ~
50
-l- t, f-- I-
20
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
ACTIVE REGION TIME CONSTANT RISE TIME FACTOR

50 2.5
1\ IIIII I I I I I
I>- 50 \ I
Vee=30V - -
II :~ 11~0
0.911,
L( 1
11 I 1.1
O.911,/IIJ
z
\ TJ = 25°C
1,= •• RII,-- 1\
~ \
z:
0
40
\ ::'"u ZoO
\
u ~
~ \. \
~
;::: 30 ;::: \
z
'\
0
'"
~
'">
20
i"..
.....
..""
~
1.5
\
.
t3
~
10
"- I"-...
o 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 1 7 10 20 30 50 70 100
Ie, COllECTOR CURRENT (AMP) 110/11,
2-516
2N3467, 2N3468 (SILICON)
2N3467 JAN AVAI LABlE
2N3468 JAN AVAilABLE
PNP silicon annular transistors for high-speed

switching and driver applications.
Collector
connected to case
MAXIMUM RATINGS


Derating Factor Above 250C 5.71 mW/oC
Total Device Dissipation @ T C = 25°C PD 5.0 watts

THERMAL RESISTANCE fJ. JA (air) = O.I75°C/mW

fJ JC (case) = 35°C/W
STORAGE TIME VARIATION WITH TEMPERATURE LIMITS OF SATURATION VOLTAGE
200 1.6
III
I
,~= Ib",I= \01" I
Vee = 30V 1.4
,-
- T :::::25°C
J
fo-
- - - T = 125°C
iii /1.=10
~ 1.2 fo- TJ = 25Q C ,....... L
i J llJ 0
~ MAX
'"
'";:::
..,
100
70
- - - ..... /I. '- 10. 120
~
~
0
>
1.0
l-
~
~
VIlEI••,
I ~
'""" "'1 .1 ~ 0.8
-
M'N .J..--"'"
f..- .....
~
= to ~ i
0
:;; 50 I 1
~ ~
/1. 1 S 0.6
.... 1-- 2N3468 y . /
30
20
1',=1,-%1,
11,'= ~O
I I
II
J. 0.4
0.2
-
MAX VeE
I--: :;.....-"'"
~..Jo-"'"
2N3467
1 I
50 70 100 200 300 500 700 1000 50 70 100 200 300 500 700 1000
'e, COLLECTOR CURRENT (mAl 'e. COLLECTOR CURRENT (mAl
2-517
Characteristic Symbol Min . Max Unit

Collector Cutoff Current leBO "Ade
(VCB = 30 Vde, IE = 0) - 0.10
(VCB = 30 Vde, IE = O,TA = 100oC) - 15
Collector Cutoff Current leEX nAde

(VCE = 30 Vde, VBE(Off) = 3 Vde) - 100
Base Cutoff Current nAc:le

IsL
(V CE = 30 Vde, VBE(off) = 3 Vde) - 120
(Ie " 10 IlAde, IE = 0) 2N3467 40 -
2N3468 50 -
Collector-Emitter Breakdown Voltage III BVCEO Vde
(Ic = 10 mAde, IB = 0) 2N3467
2N3468
40
50
--
(IE = 10 "Ade,.Ie = 0) 5.0 -
Collector SaturatiOn Voltage 111 VCE(sat) Vde
(IC = 150 mAde, IB = 15 mAde) 2N3467
2N3468
-- 0.3
0.35
(Ie = 500 mAde, IB = 50 mAde) 2N3467
2N3468
-
.- 0.5
0.6
(Ie = 1 Ade, IB = 100 mAde) 2N3467 - 1.0
2N3468 - 1.2
Base-Emitter Saturation Voltage III VBE(sat) Vde
(Ie = 500 mAde, lB. = 50 D;lAde)
- 1.0
0.8 1.2
<Ie = 1 Ade, IB = 100 mAde) - 1.6
DC Forward Current Transfer Ratici
(Ie = 150 mAde, VCE = 1.0 Vde)
111
2N3467
hFE
40 - -
(Ie =,500 mAde, VCE = 1.0 Vde)
2N3468
2N3467
25 -
40 120
2N3468 25 75
--
(Ie = 1 Ade, VCE = 5 Vdc) 2N3467 40
2N3468 25
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Cob
- 25
(V: EB = 0.5 Vdc, Ie .. 0, f = 100 kHz) - 100
Current-Gain - Bandwidth Product iT MHz
--
<Ie= 50 mAde, VCE = 10 Vdc, f'= 100 MHz) 2N3467 175
2N3468 ~50
I1IPulse Test: PW ~300 /ls, Duty Cycle ~2%
2-518

Delay Time td - 10 ns
(Ie = 500 mA, IB1 = 50 mA, VBE =
Rise Time 2 V, VCC= 30 V) ~ - 30 ns
storage Time
(Ie = 500 mA, IB1 = IB2 '" 50 IDA, VCC =30 V)
ts - 80 ns
Fall Time tt - 30 ns
Total Control Charge Q.r nC
<Ie" 500 mA, IB = 50 mA, VCC = 30 V) - 8.0

70
-- 2~34617I~-
- r--
T, = 125°C
f--- - f-- .- ~ ''''''f''- 1 - -

..... , -
V.,
Vet 2V
50
I--- -- f- -
T, _ 25°C
-f--- - -~ -- ~ "- i'
I'
z
~
tE
~ 30
"\ "
~"
\
'"
.,
:::> T, = -55°C
-- --- - \ "r'\\ \
:e
:::>
:e
Z
~ 20
l- I-- .-f- - - -R ~. \ \'
~ t, 1\ ~\
.ll
10
~l\\\ \
50 70 lao 200 300 500 700 1000
70
- V.,=IV
2J346J -
- - - V",=2V
50
T, = 125°C
- - - --- - -
~- r- -~ 1"- ........
--- f--
-- -- -- ---- - ~ r- .......
T, = 25°C
~
,
- - ~ ", \
"
r--- ,...- - - ~- f--- -- ---
T, = -55°C
1'\
- "" \
,~.
~~
............... ........
10
50 70 100 200
Ie. COlLECTOR CURRENT (IlIA)
2-519
300 SOD
" 700 1000
2N3485, A(SILICON)
2N3486, A
2N3487 thru 2N 3492 (SILICON)

ing and amplifier applications.
CASE 9
(TO·61)
MAXIMUM RATINGS
2N3487 2N3488 2N3489

Collector - Base Voltage VCB 80 100 120 Vdc
Collector Current (Continuous) IC 7.5 7.5 7.5 Adc
Base Current (Continuous) IB 4.0 4.0 4.0 Adc
Power DiSSipation PD 117 117 117 Watts
Thermal Resistance,Junction to Case °JC 1.5 1.5 1.5 °C/W
Junction Operating Temperature Range TJ _65 0 C to + 200°C °c
2-520

(V EB = 10 Vdc) ~BO - 0.10
mAdc
Collector-Emitter Cutoff Current ICEX /LAdc

(VCE = 60 Vdc, VBE = -1 Vdc) 2N3487,2N3490 - 25
(VCE = 80 Vdc, VBE = -1 Vdc) 2N3488,2N3491 - 25
(VCE = 100 Vdc, VBE = -1 Vdc) 2N3489,2N3492 - 25
(VCE = 60 Vdc, VBE = -1 Vdc, TC = 15~oC) 2N3487, 2N3490 - 250
(V CE = 80 Vdc, VBE = -1 Vdc, TC = 150oC) 2N3488,2N3491 - 250
(VCE = 100 Vdc, VBE = -1 Vdc, TC = 150oC) 2N3489 , 2N3492 - 250
Collector-Emitter Cutoff Current ICEO /LAdc

(VCE = 40 Vdc, Ia
= 0) 2N3487,2N3490 - 250
(VCE = 60 Vdc, Ia = 0) 2N3488,2N3491 - 250
(VCE = 80 Vdc, Ia = 0) 2N3489 , 2N3492 - 250

(IC = 100 /LAdc, ~ = 0) 2N3487, 2N3490 80 -
2N3488 , 2N3491 100 -
2N3489,2N3492 l20 -
Collector-Emitter Sustaining Voltage VCEO(sus) Vdc
(Ie = 100 mAdc, = 0)Ia 2N3487,2N3490 60 -
2N3488,2N3491 80 -
2N3489, 2N3490 100 -
DC Current Gain
(Ie = 0.5 Adc, VCE = 5 Vdc) 2N3487,2N3488,2N3489
hFE
20 - -
2N3490, 2N3491 , 2N3492 40 -
(Ie = 3.0 Adc, VCE = 5 Vdc) 2N3487, 2N3488 20 60
2N3489 15 45
(Ic = 5.0 Adc, VCE = 5 Vdc) 2N3490,2N3491 40 120
2N3492 30 90

VCE(sat)
(Ie = 1 Adc, IB = 0.1 Adc) - 0.3
(Ie = 3 Adc, Ia = 0.3 Adc) 2N3487,2N3488,2N3489 - 1.2
2N3490, 2N3491, 2N3492 - 1.0
(IC = 5 Adc, Ia = 0.5 Adc) 2N3490, 2N3491 , 2N3492 - 1.5

(IC = 3 Adc, Ia
= 0.3 Adc) 2N3487,2N3488,2N3489 - 1.5
(Ie = 5 Adc, Ia = O. 5 Adc) 2N3490,2N3491,2N3492 - 1.5

(IC = 3 Adc, VCE = 5 Vdc) 2N3487, 2N3488, 2N3489 - 1.5
(IC = 5 Adc, VCE = 5 Vdc) 2N3490,2N3491,2N3492 - 1.4

(VCE= 10 Vdc, Ie = 0.5 Adc, f = 1 kHz) 2N3487,2N3488,2N3489 20 100
2N3490, 2N3491 , 2N3492 40 200
(VCE = 10 Vdc, Ie = 0.5 Adc, f = 10 MHz) All Types 1.0 -
(VCB = 10 Vdc, f = 0.1 MHz) - 550
Switching Times /LS
(V CC ... 25 Vdc, RL = 5.11 , Ie = 5 Adc, IBI =-I aa = 0.5 Adc) - -
Delll¥ Time plus Rise Time td+tr - 0.35 /LS
Storage Time ts - 2.0
Fall Time tf - 0.35
2-521
FIGURE 1 - POWER·TEMPERATURE DERATING CURVE
120
2
~
'"
~
100
:0
.:"
0
80
~
~ t-......
oj
.~
is'"
60
... ...............
<J)
~ 40 ~
0 ..............
~ ......
~
"0 20
~
o
o 25 50 75 100 125 150
~200
175
o
T C ' Case Temperature ( C)
FIGURE 2 - DC CURRENT GAIN versus COLLECTOR CURRENT
100
- r-...
----- ~ 2N3490
2N3491
c 80 2N3492 ~
~ ...........
I"- r'-
1:! I
~ 60
... ['.1"-
8
&i 40
~
..c
20
L----- ~
2N3487
2N3488
2N3489
- t- r-
i"'- t"
1'r-.
o
0.1 0.2 0.3 0.4 0.5 0.8 1. 0 2.0 3.0 4.0 5.0 8.0 10
I C ' Collector Current (Amps)
ACTIVE - REGION SAFE OPERATING AREAS

FIGURE 3 - FIGURE 4 - FIGURE 5 -
2N3487,2N3490 2N3489,2N3492 2N3488,2N3491
1ms 0.5ms 0.5ms 0.5ms
10
en 5.0 -DC
250 250 250
S' /,
~s
arIes s
r-DC
~ iJI.. or\.
~s
or less
DC
~~
~s
arIes s
:'5 ~
1:!<J) 1.0
5ms ~ 1/ 5ms ~ \\ I-*""" 5ms ~ \.\ /
...
":::J
U
0.5 1 1ms
== F1ms
~
...0
"i) 0.1 ~
~
'0 .05
u•
....u
.01
o 20 40 60 80 0 20 40 60 80 100 0 20 40 60 80 100 120
VCE Collector-Emitter Voltage (Volts)
2-522
2N3494 (SILICON)
thru
2N3497
PNP SILICON ANNULAR STAR TRANSISTORS

PNP SILICON
. designed for high-voltage switching circuits and DC to VHF HIGH-VOL TAGE
amplifier applications. TRANSISTORS
• High Collector-Emitter Breakdown Voltage-

BVCEO = 120 Vdc (Min) @ IC = 10 mAde (2N3495,971
VCE(sat) = 0.3 Vdc (Max) @ IC = 10 mAdc (2N3494,96)
fT = 200 MHz (Min) @ IC = 20 mAdc (2N3494,96)
!/
TO-18
2N3496
2N3497
2N3494 0.335 OIA ---l---. ~

2N3495 0.370 II II
0.305
0.335 OIA t - l .I 0.240
0.260
: '---+
*MAXIMUM RATINGS
2N3494 2N3495
0.016 01A
0.019
0--+
-ill 1.5
~~L_~
Collector-Emitter Voltage 80 120 Vdc
VCEO
VCB 80 120 Vdc
,l
"-1 0.100
Emitter-Base Voltage VEB 4.5 Vdc ~' -~
Collector Current - Continuous 100 mAde
-~- (~!J ~T
IC
2N3494 2N3496 45'~~ ~~/ )...~

Pi" I. Emil",
2. Base
2N3495 2N3497 3. Collector
0.028 0.029
0.034 0.045
Total Device Dissipation@TA = 25°C PD 600 400 mW
TO-5 PACKAGE CASE 31 (1)
Total Device Dissipation@Tc - 25 0 C** 2.0 1.2 Watts
h
'-
PD
Derate above 25°C 11.4 6.85 mW/oC 2N3496
2N3'497 l ~:~~ r-
Operating and Storage Junction TJ,T stg -65 to +200 °c ~:::OlAll DlA
Temperature Range
*:Indicates JEDEC Registered Data.

Motorola guarantees this data in addition to JEDEC Registered Data.
MW /
QJoo O.110
0.210
.
001901A
m--.l MIN
0.100
Pin 1. Emitter
2. Base 1
J. Collector
0.028
0.048
TO-18 PACKAGE CASE 22 (1)
2-523
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(11 BVCEO Vde
(lC = 10 mAde, IB = 0) 2N3494, 2N3496 80 -
2N3495, 2N3497 120 -
(lC = 10 "Ade, IE = 0) 2N3494, 2N3496 80 -
2N3495, 2N3497 120 -
liE = 10 "Ade, IC = 0)
Collector Cutoff Current ICBO nAde
(VCB = 50 Vde, IE = 0) 2N3494, 2N3496 - 100
(VCB = 90 Vde, IE = 0) 2N3495, 2N3497 - 100
Emitter Cutoff Current lEBO - 25 nAde
(VBE = 3.0 Vde, IC = 0)
ON CHARACTERISTICS
DC Current Gain( 1) hFE -
(lC = 100 "Ade, VCE = 10 Vde) All Types 35 -
(IC = 1.0 mAde, VCE = 10 Vde) All Types 40 -
(lC = 10 mAde, VCE = 10 Vdo) All Types 40 -
(lC = 50 mAde, VCE = 10 Vde) All Types 40 -
(lC = 100 mAde, VCE = 10 Vde) 2N3494,2N3496 35 -
IIC = 10 mAde, IB = 1.0 mAde) 2N3494,2N3496 - 0.3
2N3495,2N3497 - 0.35
Base-Emitter Saturation Voltage VBE(sat) 0.6 0.9 Vde
(lC = 10 mAde, IB = 1.0 mAde)
Current-Gain-Bandwidth Produet(2/ fT MHz
IIC = 20 mAde, VCE = 10 Vde, f = 100 MHz) 2N3494, 2N3496 200 -
2N3495, 2N3497 150 -
(VCB = 10 Vde, IE = 0, f = 100 kHz) 2N3494, 2N3496 - 7.0
2N3495, 2N3497 - 6.0
I nput Capacitance Cib - 30 pF
(VSE = 2.0 Vde, ic = 0, f = 100 kHz)
I nput Impedance hie 0.1 1.2 k ohms
IIC= 10 mAde, VCE = 10Vde,f= 1.0kHz)
Voltage Feedback Ratio h re - 2.0 X 10-4
Output Admittance hoe - 300 ",mhos
Real Part of I nput I mpedanee Re(hie) - 30 Ohms
(Vce= 30Vde,IC= 10mAde,IBI = 10 mAde) (See Figure 1)
(Vee = 30 Vde,lc = 10 mAde, lSI = IS2 = 1.0 mAde) (See Figure 2)
·'ndicates JEDEC Registered Data.

(l}Pulse Test: Pulse Width ~300 fJs, Duty Cycle::::; 2.0%.
( 2l fT is defined as the frequency at which Ihfel extrapolates to unity.
III r-
FIGURE 1 - TURN-ON TIME TEST CIRCUIT FIGURE 2 - TURN-OFF TIME TEST CIRCUIT
-30 V o--Jl/IA--, -30 Vo--",'VV---,

-+91 3.0 k
I ~. 10 k I
;*~ C, < 3.0 pF ;1~Cs<3.0pF
10 k I -IO~" i-- 13 I
__ ...I
1O~'';" ';500~, IN916 ---'
tr< lOos
t2 < 10 ns
11,,10", '3'; 1.0~,
DUTY CYCLE.; 2.0%
DUTY CYCLE'; 10%
2-524
2N3498 thru 2N3S01 (SILICON)
JAN, JTX AVAILABLE
NPN silicon annular transistors for high-voltage

CASE 31 switching and low-power amplifier applications.
(lO·S)

MAXIMUM RATINGS

2N3499 2N3501
Collector Current IC 500 300 mAdc
Total Device Dissipation @ T A ; 25°C PD 1.0 Watt

Derate above 25"C 5.71 mW/oC
Total Device Dissipation @ TC ; 25°C PD 5.0 Watts
Derate above 25"C 28.6 mW/oC
Operating and Storage Junction Temperature Range T J , Tstg -65 to +200 "C
Characteristic
Symbol
eJC
2N3498
2N3499
35
I 2N3500
2N3501 Unit
"C/W
Thermal Resistance, Junction to Ambient eJA 0.175 °C/mW
TEMPERATUR~ COEFFICIENTS JUNCTION CAPACITANCE VARIATIONS

+1.0 100
+0.5
1I
Ivc for Vel 1"'1 ,."
,."
~ ~toI125OC)
I I 50
.....
,." (2S 0 C 10 -5S0C)
~ 0
V Ci....... 1oo,
i
-- --
20
-I"-
~u -0.5 ..
.....~ 2N349a. 2N3499
~u
II! -1.0
=> (2S"C to -SS"Cj
"",-
-
Iv. for YIE ,...,
- 10 ..
C..
~
~ -1.5
1A~
5.0
......
....
i'ooo
" -2.0
02:C 10 125°C)
2.0
2N3500. 2N3501
-2.5 1.0
o 100 200 300 400 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Ie. COLLECTOR CURRENT (mA) REVERSE alAS (VOLTS)
2-525

OFF CHARACTERISTICS
Collector"Emitte'r Breakdown Voltage 111 BV CEO Vde
(IC = 10 mAdc, IB = ,0) 2N3498, 2N3499 100 -
2N3500, 2N3501 150 -
(IC = 10 #lAde, IE = 0) 2N3498, 2N3499 100 -
2N3500, 2N3501 150 -
(IE = 10 #lAde, IC = 0) 6.0 -
Collector Cutoff Current ICBO #lAdc
(VCB = 50 Vde, IE = 0) 21:'13498, 2N3499 - 0.050
(VCB = 50 Vde, IE = 0, T A = 150'C) 2N3498, 2N3499 - 50
(VCB = 75 Vdc, ~ = 0) 2N3500, 2N3501 - 0.050
(VCB = 75 Vde, IE = 0, T A = 150·C) 2N3500, 2N3501 - 50

(VEB = 4.0 Vde, IC = 0) - 25
ON CHARACTERISTICS
DC Current Gain 111
(Ie hFE -
= 0.1 mAde, VCE = 10 Vde) 2N3498, 2N3500 20 -
2N3499, 2N3501 35 -
(IC = 1. 0 mAde, VCE = 10 Vde) 2N3498, 2N3500 25 -
2N3499, 2N3501 50 -
(IC = 10 mAde, VCE = 10 Vde) 2N3498, 2N3500 35 -
2N3499, 2N3501 75 -
(IC = 150 mAdc, VCE = 10 Vdc) 2N3498, 2N3500 40 120
2N3499, 2N3501 100 300
(IC = 300 mAde, VCE = 10 Vde) 2N3500 15 -
2N3501 20 -
(IC = 500 mAde, VCE = 10 Vde) 2N3498 15 -
2N3499 20 -
Collector-Emitter Saturation Voltage 111 Vde
VCE(sat)
(IC = 10 mAde, IB = 1. 0 mAdc) - 0.2
(Ie = 50 mAdc, Ia = 5.0 mAde) - 0.25
(IC = 150, mA-de, IB = 15 mAde) 2N3500, 2N3501 - 0.4
(IC = 300 mAde, IB = 30 mAde) 2N3498, 2N3499 - 0.6
Base- Emi tter Saturation Voltage C11 Vde

VBE(sat)
(IC = 10 mAdc, IB = 1.0 mAde) - 0.8
(IC = 50 mAde, IB = 5. OmAdc) - 0.9
(IC = 150 mAde, IB = 15 mAde) 2N3500, 2N3501 - 1.2
(IC = 300 mAde, IB = 30 mAdc) 2N3498, 2N3499 - 1.4
tIl Pulse Test: Pulse Width;;; 300 IJB, Duty Cycle;;; 2.0%.
2-526
2N34981hru 2N3501 (continued)

(IC = 20 mAde, VCE = 20 Vdc, 1= 100 MHz) 150 -
(VCB = 10 Vdc, IE = 0, 1= 100 kHz) 2N3498, 2N3499 - 10
2N3500, 2N3501 - 8.0
(V BE = 0.5 Vdc, IC = 0, I = 100kHz) - 80
Input Impedance h. k ohms

Ie
(IC = 10 mAde, VCE = 10 Vdc, 1= 1. 0 kHz) 2N3498, 2N3500 0.2 1.0
2N3499, 2N3501 0.25 1. 25
Voltage Feedback Ratio hre X 10- 4
(IC = 10 mAde, VCE = 10 Vdc, 1= 1. 0 kHz) 2N3498, 2N3500 - 2.5
2N3499, 2N3501 - 4.0
(IC = 10 mAde, VCE = 10 Vdc, 1= 1.0 kHz) 2N3498, 2N3500 50 300
2N3499, 2N3501 75 375
Output Admittance hoe p.mhos
(IC = 10 mAde, VCE = 10 Vdc, 1= 1. 0 kHz) 2N3498, 2N3500 10 100
2N3499, 2N3501 20 200
SWITCHING CHARACTERISTICS Typ
Delay Time (VCC = 100 Vdc, VBE(Off) = 2.0 Vdc, td 20 ns
Rise Time IC = 150 mAde, IB1 = 15 mAde) t 35 ns

r
Storage Time (V CC = 100 Vdc, IC = 150 mAde, ts 300 ns
Fall Time IBI = IB2 = 15 mAde) 80 ns

tl
SATURATION VOLTAGES SWITCHING TIMES

500
~. = 10 J
I - I"-
I\. ...........
TJ = 25°C I t, .........
1.0
1'\
'"
ALL TYPES';
en
~
0.8
.... '"
I
200
"'\1'\ ~
~
1\ i'-
n
~
V" ", 10 0
'"
4
~
6-
-I-'"
"\.
, t,
... ./
~ 0
"\,1\
! iN3501 ..... V
0 1\.\
\' /
4
~V
2N3500
1
:-. 71} Vcc::;:;:lOOV
V.E =2 V
~
Ie ~ 10 III
O. 2 Veo _ , ~<
~Ni4~81
...
..tt.
2N~49r
0
1•• := III
1'\
I-'
~
0 0
1.0 2.0 5.0 10 20 50 100 200 500 10 20 50 100 200 300
2-527
CURRENT GAIN CHARACTERISTICS vs JUNCTION TEMPERATURE

200
2N3498 _
Ve• =2V
TJ = lisoc
100
!!
Ci TJ 2SoC
!IE
:1/
...'"=> so
- I
TJ _ -55°C
"-
~
----
15
...Ii ~
20
"~
10
10 20
Ie. COllECTOR CURRENT (mA)
50 100 200
~ 500
300
200
TJ = 125°C ~N34~ _
Vet 2V
E
~ 100
TJ _ 25°C
" .... ~
...
ill TJ 55°C
II!
::>
~
'"'"
Q
50 "~
j .............. ~
~
20
""
~
10
1 10 20 50 100 200 500
Ie. COlLECTOR CURRENT (mA)
CURRENT GAIN CHARACTERISTICS versus COLLECTOR EMITTER VOLTAGE

1.5
2N3498·2N3499
1.0 TJ 25°C _
z:
C
'"...
ia
'-'
Q
§
O.S - ....
......
" '" '"

"
I\..
Ve • " r--
10V'
1\
\
'ii
~ va =IA ~~.=2V
'"z 0.2
r\.
0.1
10 20 50 100 200
"'"I" ~
500
2-528
CURRENT GAIN CHARACTERISTICS vs JUNCTION TEMPERATURE

200
I I
2N3500 _
Vco = 2V-
100 T. 125·C
z
~
15
T, 25·C .....
..,'"'":::>..,
-,'".....
50 I'
T• 55·C
---
Q
1 ~
20 ~~
~~
10 ~~
I 10 20 50 100 200 500
200
I I I
125·C
,
T.
2N3501 _
....
T. ~ 25.C I I""- Vet = 2 V
z 100
ii
~ T, = -55·C
~
...'"..,
:::> 50
.........
Q
""
Ii ~
""~
20 ~
.
""~
10
1 10 20 50 100 200
~ 500
CURRENT GAIN CHARACTERISTICS versus COLLECTOR EMITTER VOLTAGE

~
2N3500·2N3501
0 T, 25·C -
.".
" ~ =IOV-
r-.
.. ."......
" et L
'\I
"'" ..... I'\.

,
"
~=2V
Ve.=IV~ l'...
O. I
I": ~
10 20 50 :00 200 500
2-529
SMALL SIGNAL h PARAMETER CHARACTERISTICS

Ve • ~ 10 Vdc, f ~ 1.0 kHz, TA ~ 25°C
CURRENT GAIN OUTPUT IMPEDANCE
40 0 0
20 0 20
I/~
2N3499,2N3501......... ~~
2N3499,2N350Y V
V~
10
.:. 10 0 ./
-- -
.l:
,..,. .....
..... i"""" ./
I-
5.0
..,.'- 2N3498,2N3500
i-'
:.,.....- .....
2N3498, 2N3500
~
0
..,........- ..,.
2.0
20 1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2. 5.0 10
I" COLLECTOR CURRENT (mAl I" COLLECTOR CURRENT (mA!1
INPUT IMPEDANCE VOLTAGE FEEDBACK RATIO

0 50
1\
01\ ~ 20
"'1\
\. '\.
'\. " :\ \ 2N3499,2N3501
;;;
5. 0
\ " 1\ 2N3499, 2N3501
10
~ \.
'". 2N3498,2N3500
r\.
"
1
5.0
"-
.l:
2. 0 r'\
r\. I\.
I. 0
1\[\
2.0
2N3498,2N350 01\.
" i'
O. 7
O. 5
0.4
0.1 0.2 0.5 1.0 2.0
1'-
!'
5.0 lO
1.0
0.5
0.1 0.2 0.5 1.0 2.0
" 5.0 10
I" COLLECTOR CURRENT (mA I I" COllECTOR CURRENT (mAl
2-530
2N3506, 2N3507 (SILICON)
NPN silicon annular transistors for high-current,

high-speed, saturated switching and core driver appli-
cations.
CASE 31
(TO·S)
MAXIMUM RATINGS

@ 25°C Case Temperature PD 5.0 Watts
@ 25 ° C Ambient Temperature PD 1.0 Watts
Derating Factor Above 25°C 5.71 mW;oC
Junction Operating Temperature TJ 200 °C
THERMAL RESISTANCE 8JA = O.175°C/mW

B.re = 35°C/W
SATURATION VOLTAGES SWITCHING TIMES
1.4
f----J. ~ 10
1.2 f-- TJ ~ 25°C
I
I
V'EII~ L
f"'"
100
0""
....
~
t.. Vee
~ .Ie ~
30V -
2V -
101,,-
--
r I" ~I .. -
1.0
toO' o t, ,I
iIlIIt... I T ~ 25°~_
J
0.8
L
-I.
~
-
'-
~ t'-..
t. t. l-\l, -r--
-"
0
0.6 Ve'lwII/
.L ~
I'.. r--- t,
0.4 L 0 ~
...... t,
1 r-
.; o. 2
t."'I"
0 10 "I
0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0
Ie. COLLECTOR CURRENT lAde) Ie. COLLECTOR CURRENT lAde)
2-531
·Qlaracteristic Svmbol Min MIx Unit

Collector Cutoff Current ICEX j£Adc
(VCE = 40 Vd\!, VEB(off) = 4 Vdc) 2N3506 -- 1.0
(VCE = 40 Vdc, v EB(off) = 4 Vdc, T A = 100·C) -- 150
(VCE = 60 Vde, v EB(off) = 4 Vdc) 2N3507 -- 1.0

(VCE = 60 Vde, VEB(off) = 4 Vdc, T A = l00·C) -- 150
Base Cutoff Current 13L j.lAdc

(VCE = 40 Vde, VEB(oll) = 4 Vdc) 2N3506 -- 1.0
(VCE = 60 Vdc, VEB(oll) = 4 Vdc) 2N3507 -- 1.0
COllector-Base Breakdown' Voltage
(lC = 100 j.lAdc, IE = 0)
2N3506
2N3507
BVCBO 60
80
---- Vdc
Collector-Emitter Breakdown Voltage 111

(lC = 10 mAdc, pulsed, IB =0)
2N3506
2N3507
BVCEO 40
50
---- Vdc

(IE = 10 j.lAde, IC = 0) 5.0 --
Collector Saturation Voltage 111
VCE(sat) Vdc
(lC = 500 mAdc, 13 = 50 mAde) -- 0.5
(lC = 1.5 Adc, 13 = 150 mAdc) -- 1.0
(lC = 2. 5 Adc, 13 = 250 mAdc) -- 1.5
Base-Emitter Saturation Voltage 111 Vdi:
VBE(sat)
(lC = 500 mAdc, IB = 50 mAdc) -- 1.0
(lC = 1.5 Adc, IB = 150 mAdc) 0.9 1.4
(lC = 2.5 Adc, 13 = 250 mAdc) -- 2.0
DC Current GainJl1
(lC = 500 mAdc, VCE = 1· Vdc) 2N3506
2N3507
b FE
50
35
---- --
(lC = 1. 5 Ade, VCE = 2 Vdc) 2N3506 40 200
2N3507 30 i50
(lc = 2.5 Adc, VCE = 3 Vdc) 2N3506
2N3507
30
25
----
----
(lc = 3.0 Adc, VCE = 5 Vdc) 2N3506 25
2N3507 20
(V CB = 10 Vdc, IE = 0, f = 100 kHz) -- 40
(V BE = 3 Vdc, IC = 0, f = 100 kHz) -- 300
Current <l\lin-Bandwidth Product IT MHz
(IC = 100 mAdc. VCE = 5 Vdc, f = 20 MHz) 60 --
Delay Time IC = 1.5 Adc, IBI " 150 mAde td -- 15 ns
Rise Time '.'
Vec =.30 V, VEB =,0 V tr -- 30 ns
...'.
Storage Time IC = 1.5 Ade, 131 = IB2 =150 mAde ts -- 55 ns
Fall Time Vee =30 V t, -- 35 ns
IIIPulse Test: Pulse width = 300 j.lS, duty cycle = 2%
2-532
CURRENT GAIN CHARACTERISTICS
200 200
TJ =\25·C i 2N3506 I I 2N3507
t-
t-- TJ = 12'·C
Ff4::t- t"--t--
VeE-IV --VCE=JV
I t-- t- r-.,.... t--. --VeE=2V --Ve.""2V
TJ = 2,OC
100
f - - TJ=-IIOC
- "-
".......
t-.....~
100
t-- \,';' 2'·C
t-- TJ I=_,;.C
I-
r--.
I'
'.
--
0
.... :'\.. "\. o .-
" 1\.
~ I--.~ 1',\ I"-r-. '\."
r" "'-. ~ '1\
20
01 02 03 0., 1.0 20 3.0
20
0.1 0.2 0.3 os 1.0
"'~ p~
20 30
Ie. COlLECTOR CURRENT lAde! Ie. COLLECTOR CURRENT lAde!
2N3508 (SILICON)
2N3509
\ NPN silicon annular transistor for high-speed, low-

current switching applications.
CASE 26
(TO·.0t6)
MAXIMUM RATINGS

Collector Current (10 I.IS pulse) Ic(Peak) 500 rnA

@ 25°C Ambient Temperature 0.40 watt
Total Device DiSSipation PD

@ 25°C Case Temperature 2.0 Watts
/lJC 0.438 °C/mW

Thermal ReSistance, Junction to Case
/lJA 0.0875 °C/mW
Thermal ReSistance, Junction to Ambient
2-533
ELECTR ICAL CHARACTERISTICS (T A = 250 C unless otherwise noted)

Collector Cutoff Current "AIle
leBO
(VCB = 20 Vdc)
(VCB = 20 Vdc, TA = 1500C)
Both Types
2N3508
-- 0.2
30
2N3509 50
Collector Cutoff Current Ie EX "AIle
(VCE = 20 Vdc, VES(off) = 3 Vdc) - 0.2
Base Cutoff Current IBL "Adc
(VCE = 20 Vdc, VESloff) = 3 Vdc)
- 0.5
BVCBO Vdc
(Ie = 10 "Adc, IB = 0)
40 -
BVEBO Vdc
(IE = 10 "Adc, Ie = 0) 6.0 -
Collector-Emitter Breakdown Voltage 11)
BVCEO Vdc
(Ie = 10 mAde)
20 -
BVCES Vdc
(IC = 10 "Adc, IB = 0) 40 -
Collector-Emitter Saturation Voltage 11) VCE(sat) Vdc
(Ie = 10 mAde, IB = 1 mAde) - 0.25
Base-Emitter Saturation Voltage III
- 0.45
VBE(sat) Vdc
(Ie = 10 mAde, Iy = 1 mAde) 0.70 0.85
(IC = 100 mAdc, B = 10 mAdc) 0.8 1.4
De Current Gain 11)
(Ie = 10 mAdc, VCE = 1.0 Vdc) 2N350B
hFE
40 120
-
2N3509 100 300
(Ie = 10 mAdc, VCE = 1.0 Vdc, T A :; _550 C) 2N3508
2N3509
20
40
-
-
(Ie = 100 mAdc, VCE :; 1.0 Vdc) 2N3508 20 -
2N3509 30 -
(Ie = 10 mAdc, VCE = 10 Vdc, f =100 MHz)
hte
5.0 - -
(VCB = 5 Vdc, IE = 0, f = 140 kHz) - 4.0
(VSE = 1 Vdc,Ie :; 0, f = 140 kHz)
Storage Time
- 4.0
ta(T.) ns
(Ie = IB1 = IB2 = 10 mAl
Turn-On Time
- 13
ton nB
(Ie = 10 mA, IB1 = 3 mA, VCC = 3 V, VOB = 1.5 V) - 12
Turn-Off Time loff ns
(Ie = 10 mA, IBI = 3 mA, IB2 = 1.5 mA, VCC = 3 V) - 18
Total Control Charge Qor pC
(Ie = 10 mA, IB = 1 mAo Vee = 3 V) - 50
Delay Time
Vec = 10 V, VEB:; 2 V,
~ - 5.0 ns
Ie = 100 mA, IB1 :; 10 mA
Rise Time
tr - 18 ns
Storage Time
VCC = 10 V
~ - 13 ns
Ie :; 100 mA, IBI • IB2 • 10 mA

Fall Time
It - 15 ns
III Pu18e Test: PW = 3OO/J8. Duty Cycle :i 2%
2-534

70
2J350~
SO
r-T~ 12S+,~=_;~~ =
--::::: t:-:::: :::-

- t:::::--....
Ve'l=
f-
~V f-
-- I I
z j.--- T, 2SoC/
-ISOC~
---
'"'"'
i v:::::
30 T, T, = 2SoC & 7SoC f-
--- ---
~
r----~ ~
r-- ~~~
~
~
"~
V--
"""I
...-
20
10
----
----
V ---
L-- I--
!---
- --- -... f""::
r-...
T,=r::
.........
r--.... ~ :::::...
l- I-- ...... 1---
-I-
10 20 30 so 70 100
Ie, COLLEClOR CURRENT (mAl
200
T, = Ilsoc,," I-- T, = 7SoC \

I I 2~350! f--
,..... :-- ::::::::...
-
Vrr-
z
---:: "'
--
~
'"'
- ---
'" 100
~
~B ...... I--'" TJ .;::: 25°C·t. f-- T, = -ISOC\ ~ T, = 2SoC & 7SoC-

~ I--"" ~
-- --
70
~
\
'"""'" :::;
)
~ ~-
f-""" ~ f-.(
"
~ SO
..........
I-...... """"
--
"
"'"
30
20
---
,.,-
- f..--
~S~
r-..
~
"'" ........ ........ ~""
......
...... .....,
I 10 20 30 SO 70 100
TYPICAL SWITCHING TIMES LIMITS OF SATURATION VOLTAGE

100 1.4
~, 10
I
70
Vee 10 V
fVI f--~: ~ ~~oC
50
"
,I, YEI ~
~w
1.2 . TIl
IMAXVj"yLt
30 "'-1\ b(t, 1.0
t3 20 I -
t, (Vee = 3 vi" t,
~> l/1'
-I
.~ t'- IJ Vcc=lOV I-- I I
"
;::
,......
z
0 0.8 MIN VaE (,~tl
L--~;:"
i==
'":i:z 10
I" t-......
~
......
r= I.- ~ I-
~ 7
~ 0.6
t, 1
>
~
0.4
(~"
b--' I--"" MAX VeE
~
2 I
I 0.2
S 7 10 20 30 SO 70 100 I S 7 10 20 30 50" 70 100
Ie. COLLEGTOR CURRENT (mAl Ie, COLLECTOR CURRENT (mAl
2-535
2N3510 (SILICON)
2N3511
2N3647
2N3648 NPN silicon annular transistors for high-speed satu-
rated switching applications to 500 rnA.
Zll3511 "
\ 2II3MI
UfU10 . . .,
CASE 27 CASE 26
(TO·52) (TO·46)
ColI.ctor connect.d to CII ••
MAXIMUM RATINGS
Rating Symbol
2N3510 2N3511
2N3647 2N3648 Unit
Emitter-Base Voltage VEB 6.0 Vd~
TO-46 TO-52
2N3647 2N3510
2N3648 2N3511
Total Device Dissipation @TA = 25°C PD 400 360 mW
Derating Factor Above 25°C 2.28 2.06 mW/oC
Total Device Dissipation @T C = 25°C PD 2.0 1.2 watts
STORAGE TIME VARIATION LIMITS OF SATURATION ·VOLTAGE

20 I.. I II
II
10 :~ -"" - .... ~
~ 1.2
T,~
10 I
- :_J/,~25°C
II
p, 10
~~ .....
-.
1.0
~ p,= o.
i-" V
io"""
I'1
0.8
0.6
MAX VaElla!!,...
MIN VaEhatl
~
I.'-I.-Itt,
111=112 ;: I
I
IImf
--T,=2S 0 C
0.4
1-"11 MAX Veer",+! V
2 V- II T,=12S 0 C
Vee --,6 V
0.2
1 2 3 5 7 10 20 30 50 70 100 200 300 500 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
2-536
2N3510, 2N3511 , 2N3647, 2N3648 (continued)

ColleCtor Cutoff Current ICEX "Ade
(VCE = 10 Vde, VEB{off) = I Vde) - .025
(VCE = 10 Vde, VEB(off) = I Vde, TA = 150°C) - 50
Base Cutoff Current IBL "Ade
(VCE = 10 Vde, VOB = I Vde) - .025
(Ie = 10 "Ade, IE = 0) 40 -
COllector-Emitter Breakdown Voltage" BVCEO' Vde
(Ie = 10 mAde, IS = 0) 2N3510, 2N3647 10 -
2N3511, 2N3648 15 -
Emitter-Base Sreakdown Voltage BVEBO Vde
(IE = 10 "Me, Ie = 0)
Collector Saturation Voltage' VCE(.at)·
6.0
- Vde
(Ie = 10 mAde, I~ = 1 mAde) All Types - 0.25
(Ie = 150 mAde, S = 15 mAde)
(Ie = 300 mAde, IS = 30 mAde)
All Types
2N3510, 2N3647
-
-
0.4
0.6
(Ie = 500 mAde, IB = 50 mAde) 2N3511, 2N3648 - 0.8
Base-Emitter Saturation Voltage. VBE(sat)· Vde
All Types
·All Types
-
0.8
0.8
1.0
(Ie = 300 mAde, IB = 30 mAde) 2N3510, 2N3647 - 1.15
(Ie = 500 mAde, IR = 50 mAde) 2N3511, 2N3648 - 1.5
DC Current Gain' hFE'
(Ie = 1.0 mAde, VCE = 1 Vde) 2N3510, 2N3647 12 -
2N3511, 2N3648 15 -
(Ie = 10 mAde, VCE = 1 Vde) 2N3510, 2N3647 20 -
(Ie = 150 mAde, VCE = 1 Vde)
2N3511,
2N3510,
2N3648
2N3647
25
25
-150
2N3511, 2N3648 30 120
(Ie = 150 mAde, VCE = 1 Vde, TA =
-550 C) 2N3511,
2N3510,
2N3648
2N3647
12
15
--
(Ie = 500 mAde, VCE = 1 Vde) 2N3511, 2N364R 12 -
(VCS = 10 Vde, IE = 0, f = 100 kHz) - 4.0
Input Capacitance C lb pF
(VBE = 0.5 Vde, Ie = 0, f = 100 kHz) -
-
8.0
Small Signal Current Gain hre
(Ie • 15 mAde, VCE = 10 Vde, f = 100 MHz) 2N3510, 2N3647 3.5 -
2N3511. 2N3648 4.5 -
Delay Time
2N3510, 2N3647 - 10
(Ie = 150 mA, 2N3511, 2N3648 ~ - 8.0
ns
Rise Time ll' 15 mA,

EB = 0.5 V,
2N3510, 2N3647
2N351l, 2N3648 tr -
-
12
10
ns
Turn-On Time
VCC = 6 V) 2N3510, 2N3647 - 20
2N3511, 2N3648 ton - 16
ns
Storage Time 2N3510, 2N3647

t,. - 16
(Ie. 15.0 mA,
2N3511, 2N3648 - 12 ns
~1 = -lB2 = 15 rnA, 2N3510, 2N3647 12

Fall Time
CC = 6 V) 2N351l, 2N3648 tr - 8.0
ns
Turn-Off Time
2N3510, 2N3647
2N3511. 2N3648 toff -- 25
18 ns
Total Control Charge QT pC

(Ie· 150 mA, IS = 15 mA, VCC • 6V) - 300
Small Signal Current Gain hre
(Ie·· 1 mA, VCE = 10V,f = 1 kHz) 20 150
Voltage Feedback Ratio h re Xl0- 4
(Ie = 1 mA, VCE = 10 V, f = 1 kHz) - 25
Input Impedance h;e kohrna
(Ie' 1 mA, VCE = 10 V, f = 1 kHz) 0.6 4.5
Output AdmIttance hoe "mhos
Uc= lmA,VCE -10V,f= 1 kHz) 10 100
• Pulse Test: PW" 300 "s, Duty Cycle'" 2%
2-537
2N3510, 2N3511 , 2N3647, 2N3648 (continued)

50
,
--
~ ~
2N3511
- r-i==- -
2N3648
l- ...-"-
------ -- --
I Ye,= I Y -
30
~
'"
1§
'"
~
~
~
u
10
V
~
:,...- ......
- ~-
J I
_r-
- "'-, ~
'\
I\.
-
1i
lk-
'"z ,....... ...-...- \
---- - -
:;;
~ _r- ............... !\
V
£,
,..- "'-
'" ""\
10
I-
I- 'I\. "\
~ !\
10 20 30 50 70 100 200 300

'\ 500
Ie, COLLECTOR CURRENT [rnA)
50
-
2N3510
2N3647
r-..
",
30 Ye ,= I Y -
f-'TJ ~ 125°C
.- f-I-
z
1§
V I-
,......-
r-±== - i
l- f-- ~,
z
!1i
'"
z
:;;
20
V-
~
-
--- -
- ,......-
,..-f-
~
IJ
-r-
- '"'"
\
1\
\
- -
'"
:,...-f-
-- - --
~
-
£,
.- ...-...- I -....., [\
, ""\
10
..I--- ~ ~
.... ,.-"'" TJ -55°C
,....- I-- !\ \
,......- '\
10 20 30 50 70 100 200 300 500
2-538
2N3544 (SILICON)
CASE 22
(TO-18) \
MAXIMUM RATINGS
NPN silicon annular transistor for VHF and UHF
oscillator applications.

Collector-Emitter VQltage VCES 25 Vdc
Power Dissipation @ TC =25°C PD 400 mW

Power Dissipation @ TA =25°C PD 300 mW

Junction Temperature TJ +175 °C
TEST CIRCUIT
SHORT
SOU AOJUSTABll LINE
330 pf
SOU
lKU
POWER METER
r-1o_oO_p_f______________~____~~1O~0~OP~f I~--~~::::::~t:==--~--------------~
UK me CAVITY)
v" Vee
+- + NOTES,
I. SET Vee= 12 Vde.
2. ADJUST V" fOR ie= 12 mAde.
3. SET ADJUSTABLE LINE FOR
MAXiMUM POWER OUTPUT.
2-539
2N3544 (continued)
Collector-Base
Breakdown Voltage BVCBO IC = 10 /.LAdc, IE = 0 25 30 -- Vdc
Collector- Emitter
Breakdown Voltage
BVCES IC = 10 /-LA, VBE = 0 25 30 -- Vdc
Collector Cutoff Current ICBO VCB = 15 Vdc, IE = 0 --- 0.01 0.1 /.LAdc
Emitter Cutoff Current lEBO VEB = 3 Vdc, IC = 0 -- 0.1 10 /-LAdc
DC Current Gain hFE VCE = 10 Vdc, IC=10 mAdc 25 50 -. ..
AC Current Gain VCE = 10 Vdc, IC =10 mAdc, 6.0 9.0 15 -.

Ihfel f = 100 MHz
VCB = 15 Vdc, IE =0,
Collector Output Capacitance Cob f = 100kHz -- .- 2.5 pF
VCB = 10 Vdc,IC = lQ m,!\Qc, _.
Collector-Base Time Constant r b 'cc f =31.8 MHz -- 10 ps
Oscillator Power Output f =l.OGHz, Vc = 12 Vdc,

lC=12 mAdc
2-540
2N3546 (SILICON)
PNP silicon annular transistor for low-level, high-

CASE 22
(TO-18)
MAXIMUM RATINGS

Total Device Dissipation @ TA = 25·C PD 0.36 Watt

Derate above 25·C 2.06 mW/"C
Total Device Dissipation @ TC = 25·C PD 1.2 Watts

Derate above 25·C 6.9 mW/"C
Operating Junction Temperature TJ 200 ·C
Storage Temperature Range T stg -65 to +200 ·C
Thermal ReSistance, Junction to Ambient ()JA 0.49 °C/mW
Thermal ReSistance, Junction to Case ()JC 0.15 °C/mW
2-541
2N3546 (continued)
ELECTRICAL CHARACTERISTICS (T A = 25 0 C unless otherwise noted)

Collector Cutoff Current I CBO ",Ade
(VCB = 10 Vde) -- 0.010
(V CB " 10 Vde, T A" 150·C) -- 10
Collector Cutoff Current I CEX ",Ade

(VCE" 10 Vde, VBE(Off) " 3 Vde) -- 0.010
Base Cutoff Current IBL ,..Ade

(VCE = 10 Vde, VBE(Off) " 3Vde) -- 0.10

(IC " 10 ",Ade, IE =0) 15 --
(IE =10 ",Ade, IC" 0) 4.5 --
Collector-Emitter Breakdown Voltage (11 BVCEO Vde
(IC = 10 mAde, IB = 0) 12 --
Collector Saturation Voltage 111 Vde
VCE(sat)
(IC " 10 mAde, IB = 1 mAde) -- 0.15
(IC " 50 mAde, IB = 5 mAde) -- 0.25
(IC " 100 mAde,. IB " 10 mAde) -- 0.50
Base-Emitter Saturation Voltage 111 VBE(sat) Vdc

(IC = 10 mAde, IB " 1 mA.:!e) 0.7 0.9
(IC = 50 mAde, IB = 5 mAde) 0.8 1.3
(IC " 100 mAde, IB " 10 mAdc) -- 1.6
DC Current Gain 111 hFE --

(IC " 1. 0 mAde, VCE " 1 Vde) 20 --
(IC = 10 mAde, VCE " 1 Vde) 30 120
(IC " 10 mAdc, VCE = 1 Vdc, T A " -55·C) 15 --
(IC " 50 mAdc, VCE " 1 Vde) 25 "-
(IC " 100 mAde, VCE " 1Vde) 15 --
(V CB " 10 Vdc, IE "0, f z 1 MHz) -- 6.0

(VBE = O. 5 Vde, IC = 0, f" 1 MHz) -- 5.0

(IC = 10 mAde, VCE " 10 Vde, f = 100 MHz I 700 --
Total Control Charge QT pC
(IC = 50 mA, IB = 5 mA, VCC " 3 V) -- 400
Delay Time IC = 50 mA, IBI "SmA, td -- 10 nl

Rise Time VBE = 2 V, VCC " 3 V tr -- 15 ne
storage Time IC = 50 mA, lsi = 1s2 = 5 mA, t. -- 20 ns
Fall Time VCC = :I V tf -- 15 ne
Turn-On Time
(See Figure 3.4.5,)
ton -. 40 ns
Turn-Off Time toff -- 30 ns
(1)Pulse Test: PW = 300 ",8, Duty Cycle ~ 2%
2-542
2N3546 (continued)
FIGURE 1 FIGURE 2
LIMITS OF SATURATION VOLTAGES STORAGE TIME BEHAVIOR
1.6 30
-
rP'~ 10
1.4 I- TJ ~ 25°C
V 20 --f~:-
-.Ll~10
b.< ..... - -
i'
.,...~,~ 20':::::-'" r-- .... ....... ..... r--- I"r ...
1.2
~ V
~ ~
, I, ...... ~ ........ -...... r-.
~
,/
1.0 1' ..
~ ......... ....... 1',,-
...... f'
r-r- r- MAX V8Et5..tl I, =I,-'Iot/
181 =112 ............. r-....
z
51
0.8
I I 10 - - TJ =2SoC
r-....
~ - - - TJ -= 125°C .......
Si 0.6 = r--- f- MIN VaElutl .......
"i
,; 0.4 " r\
0.2 - r--- r- M~X Ve~I"~1 ~ 5
10 20 30 50 70 100
0 Ie, COLLECTOR CURRENT (mAl
1.0 2.0 5.0 10 20 50 100
FIGURE 3 FIGURE 4 FIGURE 5

DELAY AIID RISE nME STIlU8E AND FAlL nME SWlTCHIII8 nME TEST CIRCUIT
EQUIYALENT TEST CIRCUIT
-3Y
[QUIYAl.EllJa''1ST CIRCUIT V. -2Y
1000620
550 550
I
;*~ Cs":IOpf
I
.... ~
Y
.. +2YQ-F
-IO.avU
PULSE WIDTH - 200 III
~ _,u;n
PULSE WIDTH = 200 III
PULSE WIDTH > 200 III
R1S£ TIME < 1111
z..-500
t..: VBS = +3Y,Y.. = -7V

R1S£TlME ... 2111 R1S£ TIME ..: 2 III t.w: VBE =-4Y, Y.. = +6Y
DUTY CYCLE "" 10% DUTY CYCLE "'10%
·OSCllLOSCOPf RISE TIME"; I ..

FIGURE6
0
.- ..- f - - - -- - r-- -
TJ = 125°C --Ve,=IV
-...::: -
- - - Ve,=2V
~- t-
0
- -- ~ 1' .....
-
,:::::::.;:- =25°C ....... .......
0~ - TJ
- ,- ~
""
-- - -- ~-
~ ' ....
..---
.-.:
............. '~~
0
O~
.-- .....
TJ = -55°C
- --:::.:::: .::::.: f::.:: ....

,,~
.....r.....
7 I'.
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Ie;. COLLECTOR CURRENT !mAl
2-543
2N3553 (SILICON)
2-544
2N3611 thru 2N 3614 (GERMANIUM) PNP germanium power transistors
for switching and amplifier applications.

device MP3611 etc. (TO-41 package)
CASE 11 CASE 4-04
(TO-3) (TO-41)
MAXIMUM RATINGS
Rating Symbol
2N3611 2N3612 Unit
2N3613 2N3614
Collector-Emitter Voltage (Open Base) VCEO 25 35 Vdc
Collector Current (Continuous) Ie 7.0 Adc
Peak Collector Current (PW ~ 5 msec) Ie 15 Adc
Base Current (Continuous) IB 2.0 Adc
Operating Case Temperature Range TC -65 to +110 °c
Total Device Dissipation @ TC = 25°C PD 77 watts
Derate above T C = 25°C 1.0 wloe
Thermal Resistance, Junction to Case ilJC 1.1 °clw

Thermal Resistance, Case to Ambient ilCA 32.7 °clw

2N3611 and 2N3613 2N3612 and 2N3614
20 20
15 15 I
.........
I'---, ""'50 "l"-., 5Ol's
'"
10
......... I'S 10
5OOl'S 500 I's
....... """-
'"
-
""- DC , ""
1. . . . . . . . . . 5ms
"I\. \ \
\\\ \
fC
~
0-
~
"
"Jms
i'-..
DC
~
~'\ i'-
'\. I'\.
.1\.
'\r--..1\.\
" "'"
2
'\ 13 1.5
'\.
~LOW EXPANDED ~
"!!!V "-.,
CURRENT AREA
1
SEE NOTE
'" '\...\
'\.
\
:='"'-'
~ 0.7
2 0.5
I
1 SAF~1
EXPANDED ........ '
LOW CURRENT AREA
SEE NOTE
'" '\.
\\
"- \\
~
SAFE \
AREA
\ AREA
'\ "'-,
~"-"'l
L
='¥~~
2""'_1
0.3 0.3
0.2
o Ic.oUMIT \ 0.2 i\\
0 1 3041V o f 45 60/
0.15 0.15
0.1 --r 0.1 ---r ---1 \
o 10 15 20 25 30 o 10 15 20 25 30 35 40 45
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS) VeE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate current has been reduced to 20 rnA or less before or
IccVCE limits below which the device will not go into at the BVCES limit; then· and only then may the load
secondary breakdown. Collector load lines for specific
circuits must fall within the applicable Safe Area to line be extended to the absolute maximum voltage rat-
avoid causing a collector-emitter short. (Case. tempera- ing of BVeRo. To insure operation below the maximum
ture and duty cycle of the excursions make no signifi- T J • the power-temperalure derating curve must be ob-
cant change in these safe areas.) The load line may served for both steady state and pulse power condi-
exceed the BVCES voltage limit only if the collector tions.
2-545
Chanmristics SJlllbal Mil Mu Ullt

Collector-Emitter Breakdown Voltage. BVCES • Vde
(IC = 250 mAde) 2N36ll, 2N3613
2N36l2, 2N3614
30
45
--
Collector-Emitter Breakdown Voltage· BVCEO • Vde
(~ = 500 mAde) 2N36ll, 2N3613
2N3612, 2N3614
25
35
--
Floating Potential VEBF Vde
(VCB = VCB max) - 1.0
Collector-Emitter Leakage Current

~EO mAde
(VCEo = 1/2 VCEO max) - SO
Collector-Emitter Leakage Current

(VCE = VCE max, VBE = 1.0 Vdc, TC = +100·C)
~EX mAde
- 10

(VCB = 2 Vdc) - .040
(VCB = 25 Vdc) 2N36ll, 2N3613 - 0.5
(VCB = 40 Vdc) 2N3612, 2N3614 - 0.5
(VCB = VCB max) - 5.0
Emitter-Base Cutoff Current ,.Adc

lEBO
(VEB = VEB max) - 500

(~ = 3 Adc, IB = 300 mAde)
VCE(sat)
- 0.25
(~ = 7 Adc, ~ = 700 mAde) - 0.S5

(~ = 3 Adc, ~ = 300 mAde) 2N36ll, 2N36l2
2N3613, 2N3614
VBE(sat)
-- 0.7
0.6
(IC = 7 Adc, IB = 700.mAdc) 2N36ll, 2N3612 - ·1.1
2N3613, 2N3614 - 0.9

(~= 3 Ade, VCE = 2 Vdc) 2~611, 2N3612 3.0 -
2N36l3, 2N3614 3.5 -
(IC = 0.5 A, VCE = 12 V, f = 20 kHz)
hfe
15 - -
(~ = 0.5 A, VCE = 2 V, f = 1 kHz) 2N36ll, 2N3612 40 100
2N3613, 2N3614 60 150
DC Current Gain
(~= 3 Adc, VCE = 2 Vdc) 2N36ll, 2N3612
hFE
35 70
-
2N3613, 2N3614 60 120
--
(~= 7 Adc, VCE = 2 Vdc) 2N36ll, 2N3612 20
2N3613, .2N3614 30
·SWeep Test: 1/2 sine wave, 60 Hz
These transistors are

also subject to safe area
curves. Both limits are
applicable and must be
observed.
25 50 75 100 110 125

. TEMPERATVRE (OC)
2-546
COLLECTOR CURRENT versus BASE·EMITTER VOLTAGE

10
/? /' TYPICAL SWITCHING TIMES

5.0 //'
//
3.0 / / /
2.0 VI / r--
-8- .-V1
&-
--
0::
'"5z I, r-
><
~
=
~
=
::>
TJ=+loooCtV /OOC
u 1.0
= .........
~
8
I
/' ,......"
.2
0.5
0.3 /
/
/
/
/
I
-
f - - ,.....-
,--t-"If
f...-
0.2 / / ~ I" = -182= lellO
0.1 I I 0.2 0.4 0.6

V", BASE·EMITTER VOLTAGE (VOLTS)
0.8
VeE = 2V
1.0
I
0.3 0.5 0.7 1.0 2.0
I I I
3.0 5.06.0
DC CURRENT GAIN versus COLLECTOR CURRENT
- -
200
I
f--
V r-- VeE=2V
--- - -
r--
------
r-- TJ = 100°C
r--.....
r---- t:- :--
-r--
25°C
40°C
hfE ~ Ie - leBO
-I,+le,o
.010 .030 .050 0.1 0.3 0.5 1.0 3.0 5.0

Ie, COLLECTOR CURRENT lAMP·)
COLLECTOR-EMITTER SATURATION VOLTAGE VAR:ATIONS
i 0.5
~{
I \
~~ \ I
I
\
z
'"
0.4
r, , I
I
\~\ '\" " -- 25°C TJ
- - - 100°C
~
I - - ---40°C
I ....
0.3
' .........
'~
~ ~ '0 t-...........
~~ ~~ - -,
g
0.2
~ ~ .:,;;:;. ~.... ~ -
.....
-
-- - ---
-r--f-
t- 1- -
-- le=7A
_
8
0.1 --- - - -----
.....
"-
- leilA
--- -
- .1--
Irr
---
.! 0
:E 5 10 20 30 50 70 100 200 300 500 700 1000 2000
2-547
CASE 11 CASE 4-04

(TO-3) (TO-41)
devices MP3615 etc. (TO-41 package)
MAXIMUM RATINGS
2N3615 2N3616 Unit
Rating Symbol 2N3618
2N3617
(Open Base)
Peak Collector Current IC 15 Adc
(PW ~ 5 msec)
Base Current (Continuous) IB 2.0 Adc
storage Temperature -65 to+ 110 ~C
Tstg
Operating Case Temperature TC -65 to+ll0 -Uc
Total Device Dissipation PD Watts
@TC = 25 0 C 77
Thermal Resistance, ()JC 1.0 °C/W
Junction to Case
Thermal ReSistance, ()CA 32.7 °C/W
Case to Ambient
@TA @Tc POWER·TEMPERATURE DERATING CURVE

5 100
85
4 80
-"""""'Tc
3
2.6
o
2
60
40
20
o
IA
--- ............
-r---.:::-- ~
~
------~......... r:=::....
o 25 50 75 100 110 125
TEMPERATURE (OC)
These transistors are also subject to safe area curves.
Both limits are applicable and must be observed.
2-548

Collector-Emitter Breakdown Voltage* BV CES * Vdc
(IC = 250 mAde) 2N3615, 2N3617 60 -
2N3616, 2N3618 75 -
Collector- Emitter Breakdown Voltage* BV CEO * Vdc
(IC = 300 mAdc) 2N3615, 2N3617 50 -
2N3616, 2N3618 60
1.0
(V CB = VCB max) -
Col1.ector-Emitter Leakage Current I CEO ' mAdc

(V CE = 1/2 VCEO max) - 30
Collector- Emitter Leakag·e Current I CEX mAdc

(V CE = VCE max, VBE = 1.0 Vdc, T C = +100°C) - 10
Collector-Base Cutoff Current I CBO mAde

(VCB = 2.0 Vdc) - 0.060
(V CB = 55 Vdc) 2N3615, 2N3617 - 1.0
(V CB = 65 Vdc) 2N3616, 2N3618 - 1.0
(V CB = VCB max) - 5.0
Emitter-Base Cutoff Current lEBO IlAdc

(V EB = VEB max) 500
(V EB = 12 Vdc) -
VCE(sat)
(IC = 3.0 Adc, IB = 300 mAdc) - 0.25
(I C = 7.0 Adc, IB = 700 mAdc) - 0.35
Base Emitter Saturation Voltage Vdc

VBE(sat)
(IC = 3.0 Adc, IB = 300 mAde) 2N3615, 2N3616 - 0.7
2N3617, 2N3618 - 0.6
(IC = 7. 0 Ade, IE = 700 mAdc) 2N3615, 2N3616 - 1.1
2N3617, 2N3618 - 0.9
(IC = 3.0 A, VCE = 2.0 V) 2N3615, 2N3616 3.0 -
2N3617. 2N3618 3.5 -
Small Signal Current Gain hie -
(IC = O. 5 A, VCE = 12 V, f = 20 kHz) 15 -
(Ic = O. 5 A, VCE = 2.0 V, f = 1. 0 kHz) 2N3615, 2N3616 40 100
2N3617, 2N3618 60 150
(I C =3.0Adc, VCE =2.0Vdc) 2N3615, 2N3616 30 60
2N3617, 2N3618 45 90
(IC = 7.0 Adc, VCE = 2.0 Vdc) 2N3615, 2N3616 20 -
2N3617, 2N3618 30 -
Current-Gain-Bandwidth Product IT Typ kHz
(I C = 0.5 Adc, VCE = 2.0 Vdc) 600
*Sweep Test: 1/2 sine wave, 60 Hz
2-549

2N3615 and 2N3617 2N3616 and 2N3618
20 20
15 15 I
10 "- 1"-.."- 5O"s
10
'\ ~ ~50f.LS
500".s
"- 5OO"s .....
" ~
.......
"- "- I'\.I
~ '""- ,,,,-
" r'\.~ms '""-
"
"'-5ms /C
~
r
5
DC~ [",-
I "'-
'"
DC" .....
~ !2: f\.
::::>
u
e'"
~
1.5
0.7
LOW EXPANDED ~
CURRENT AREA '" '" .......
'\.\
\. ~
a
R~
_ 0.7
1.5
I r V LOW EXPANDED ~."

CURRENT AREA
'\..
'\\
\.
\'"
u
.....
" 1"- "
,
~
GM~
0.5
1~~~1
~ 0.5
I'... \'
0.3
H "'-..... , "'- AREA 20 A I '\ "'-
~'M'3
0.3
J ~/
""
0.2 0.2
o f 60 80/ o 75 100/1
"-
'" 1\
0.1
10 20 30 40
VeE. COLLECTOR·EMmER VOLTAGE (VOLTS)
NOTE The Safe Operating Area Curves indicate

50
'"60
0.1
10 20 30 40 50 60
VeE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
current has been reduced to 20 rnA or less before or

70 80
le-VcE limits below which the device will not go into at the BV CES limit; then and only then may the load
secondary breakdown. Collector load lines for specific line be extended to the absolute maximum voltage rat-
circuits must fall within the applicable Safe Area to
avoid causing a collector-emitter short. (Case tempera- ing of BVCBO' To insure operation below the maximum
ture and duty cycle of the excursions make no signifi- T J • the power-temperature derating curve must be ob-
cant change in these safe areas.) The load line may served for both steady state and pulse power condi-
exceed the BVOF:. voltage limit only if the collector tions.
DC CURRENT GAIN ,ersus COLLECTOR CURRENT

200
--- r-- TJ= +IOO°C
~
~
150 H-+k
+25°C
--- - r-
VeE = 2V
hFE 1_ . I~ -
Ia +ICBO
bo. _
::::>
u
1S
1-
100
50
-40°C r- t--
- I'-...
c:::::-: ~
I--
0.01 0.015 0.02 0.03 0.05 0.1 0.15 0.2 0.3 0.5 1.0 1.5 2.0 3.0 5.0 10.0

~
~ 0.5
.
~ \
\
~~ 0.4
\ \\ ,,
is
i
::::>
~
0.3
"- , \
"\ I~ j'I.
\
\~
,
'"
'-. ~ ::-
, ,
le...=7A
-
"
ffi
t: 0.2
i'!l
~
~ 0.1
- - +25°CTJ
- - __ -40°C
- - - +loo°C
"
- " .
" ~ ~ ::::::
-"':"-
"'"
~
--
...... -~
:::::.-:
=-' .le=l(
le=3A
1 0
~ 1 1.5 to 15 20 30 so 70 100 ISO 200 300 500 700 1000
I,. BASE CURRENT (mA)
2-550
COLLECTOR CURRENT versus BASE·EMITTER VOLTAGE BASE CURRENT versus BASE·EMITTER VOLTAGE
10 300
200
V
l'l~
./ ~
5.0
./
'/
/. 1/
100 /
3.0
V /
r;:: 2.0
VV / 50
/
L
/
/ L
'"5
~ V/ lic I /V
/
+ic'j
:> TJ=+J00°C/+25°C
<.> 1.0
I
~ TJ = +JOO·~/J W -40·C
~ 0.5 L
.!J / / /
1I / / 5.0
0.3 / /
V
0.2
/ II VCE=2V
3.0
Ii
I
I/
/ /
VCE~2V
II 2.0 SEE rTE 1 >--
0.1 /
0.2
/ 0.4
I 0.6
V,. BASE:EMIITER VOLTAGE (VOLTS)
0.8 1.0
1.0
0.1
I
I
I
0.2
V/ 0.3 0.4 0.5 0.6 0.7 0.8
VIE. BASE·EMITTER VOLTAGE (VOLTS)
0.9 1.0
NOTE 1 - Dotted line indicates Metered Base Current plus the leB" of the transistor at 100°C.
COLLECTOR CURRENT versus BASE·EMITTER VOLTAGE
300
7 7 7
TYPICAL SWITCHING TIMES 200
100 / / /
15
50
30
20
/ / /
10
/
10
/ / 7
;;;:
./ .s 5.0 I=TJ +JOO·C
V ~ 3.0
B 2.0 I /
/ '" I~·C V /
t- ~t- V ./
V ~
~ 1.0
/p ~V
8 0.5
.!J 0.3
I
I- ~~
I- ~ 0.2
I
kt: 0.1
2.5
[7
0.3 0.5 0.7 1.0
rTr
2.0
Ic. COLLECTOR CURRENT !AMP)
3.0 5.0 1.0
0.05
0.03
0.02
0.01
0.3
~25·C
0.2
I
0.1 -0.\
VIE. BASE·EMIITER VOLTAGE (VOLTS)
-0.2
VCE - 'n VCEO-
-0.3
2-551
2N3632

JAN, JTX A VAl LABLE
PNP silicon annular transistors for high-voltage
switching and low-power amplifier applications.
CASE 31
(TO·S)
MAXIMUM RATINGS

2N3635 2N3637

Total Device Dissipation @ TA = 25°C PD 1.0 Watt

Total Device Dissipation @TC = 25°C PD 5.0 Watts
Operating and Storage Junction Temperature Range TJ , T stg -65 to +200 °c
FIGURE ,. - JUNCTION CAPACITANCE VARIATIONS FIGURE 2 - GAIN·BANDWIDTH PRODUCT

100 500
I .1.
Yc.= lOY
0_ TJ = 2S'C
0
...........
- c;:- t;
~ 200 , ", ~
I
0 r.....
,1~
~
c•• 1\ i!J 100
/
7
0
70
./
/ ""
5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
50
1.0 " 2.0 3.0 5.0 7.0 10 20 30 50 70 100
REVERSE BIAS (VOlTS)
2-552
ELECTRICAL CHARACTERISTICS (TA = 2S'C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltagel1i - BVCEO Vde
(IC = 10 mAde, IB = 0) 2N3634, 2N3635 140 -
2N3636, 2N3637 175 -
Collector-Base Breakdown Voltage - BVCBO Vde
(IC = 100 !lAde, IE = 0) 2N3634, 2N3635 140 -
2N3636, 2N3637 175 -
Emitter-Base Breakdown Voltage - BV EBO Vde
(IE = 10 !lAde, IC = 0) 5.0 -
Collector Cutoff CUrrent - ICBO nAde
(VCB = 100 Vde, IE = 0) - 100
Emitter Cutoff Current - lEBO nAde

(V BE = 3.0 Vde, IC = 0) - 50
ON CHARACTERISTICS
DC Current Gain (1 I 3,4,5,6 hFE -
(IC = 0.1 mAde, VCE = 10 Vdc) 2N3634, 2N3636 40· -
2N3635, 2N3637 80 -
(IC = 1. 0 mAde, VCE = 10 Vde) 2N3634, 2N3636 45 -
2N3635, 2N3637 90 -
(IC = 10 mAde, VCE = 10 Vde) 2N3634, 2N3636 50 -
2N3635, 2N3637 100 -
(IC " 50 mAde, VCE " 10 Vde) 2N3634, 2N3636 50 150
2N3635, 2N3637 100 300
(IC = 150 mAde, VCE = 10 Vde) 2N3634, 2N3636 25 -
2N3635, 2N3637 50 -
Collector-Emitter Saturation Voltage 1'1 11,12 VCE(sat) Vdc
(IC = 10 mAde, IB = 1. 0 mAde) - 0.3
(IC = 50 mAde, IB = 5.0 mAde) - 0.5
Base-Emitter Saturation Voltage ('1 11,12 Vde

VBE(sat)
(IC = 10 mAde, IB = 1. 0 mAde) - 0.8
(IC = 50 mAde, IB = 5.0 mAde) 0.65 0.9
Current-Gain-Bandwidth Product 2 IT MHz
(VCE = 30 Vdc, IC = 30 mAde, I = 100 MHz)
2N3634, 2N3636 150 -
2N3635, 2N3637 200 -
(VCB " 20 Vde, IE = 0, I = 100 kHz) - 10
Input Capacitance 1 C ib pF
(V BE = 1.0 Vde, IC = 0, 1= 100 kHz) - 75
Inpu t Impedance 7 hie ohms

(IC = 10 mAde, VCE = 10 Vde, I = 1. 0 kHz)
2N3634, 2N3636 100 600
2N3635, 2N3637 200 1200
Voltage Feedback Ratio 10 hre X 10-4
(IC = 10 mAde, VCE = 10 Vde, f = 1. 0 kHz) - 3.0
Small-Signal Current Gain 9 hie -

(IC = 10 mAde, VCE = 10 Vde, 1= 1. 0 kHz)
2N3634, 2N3636 40 160
2N3635, 2N3637 80 320
Output Admittance 8 hoe /IDlhos
(IC " 10 mAde, VCE = 10 Vde, [= 1. 0 kHz) - 200
Noise Figure - NF dB
(IC = 0.5 mAde, VCE = 10 Vde, RS = 1. 0 k ohms, - 3.0
f " 1. 0 kHz)
Turn-On Time (VCC = 100 Vde, VBE = 4.0 Vdc,
Turn-Off Time IC = 50 mAde, IBI = IB2 = 5.0 mAde)
('1 Pulse Test: Pulse Width ~ 300/JS, Duty Cycle ~ 2.0%.
2-553
FIGURE 3 - CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE

300
2N3634
200 VCE -.2.0V
T, = 125'C
i 100
t5 70
~ 50 T,-25't- -... .......
8
1 0 T, = 55'C ....... "- ...... '"
~
....... i'~
20
~ t:-.......
I0
I"":
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLlECTORCURROO (rnA)
300
2N3635
200 T, 125'C VCE= 2.0V
I"-...
~ t--..
T, 25'C
I
i 100
~, 55'C
15 70
"-
58 ......
1
50
i'...'"~
"- ~
0
20 ~
I0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
(C, COllECTOR CURRENT (mAl
FIGURE 4 - CURRENT GAIN CHARACTERISTICS versus COLLECTOR EMITTER VOLTAGE

2. 0
2H3634·2N3635
TJ~25'C -
l.0 r
o. 7 ........
..... .....
VeE~ 10V~
o. 5 .........
............
.........
" ..... VeE ~ 2.0V
o. 3 "-
O. 2
NORMALIZED TO VeE = 10 V Ie =50 mA ...... ~
t'--..~
VeE = l.Ov..............
c-......
~
O. I
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie. COLLECTOR CURRENT '.mA)
2-554
FIGURE 5 - CURRENT GAIN CHARACTERISTlCSversusJUNCTlON TEMPERATURE

300
2N3636
200 Ve,- 2.0V
TJ -12S"C
0
~ ~
TJ 2S"C
"- r-.
["0". i"'o..
30
TJ SS"C
r-...: t-- t'-
0
r-.. ~'" r-..
I0
"'~"
~~
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT (rnA)
300
TJ - 12S"C 2N3637
ZOO VCI- 2.0V
..... r--.,.
~
TJ 2S"C .........
0 TJ SS"C'
I
"
I.....
0 I'.~"'
l'-['
0 "'~
0
~~
~
10
1.0 2.0 3.0 S.O 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT (rnA)
FIGURE 6 - CURRENT GAIN CHARACTERISTICS versus COLLECTOR EMITTER VOLTAGE

2.0
2N3636·2N3631
TJ -25'C-
1.0
O} ........ ...... "\.

.........
0.5 ...........
........... '"'" Vco - \O(~ .
........
0.3
0.2
I
NORMALIZED TO VeE ~ 10 V. Ie ~ 50 rnA VeE

"-
~ 1.0 V"--....
.......
" 1', VeE ~12.01
I.
........
I r--. 'r-.. I
oI
1.0 1.0 3.0 5.0 7.0 \0
Ie. COLLECTOR CURRENT [mAl

10 30 50 70 """ l'......
100 200
2-555
fiGURE 7 - INPUT IMPEDANCE fiGURE 8 - OUTPUT IMPEDANCE

0 0
1\ \
0
1\ 1\ 0
7. 0 \.
ill)
0
0
\ 2N3635,2N363:;
II
\ ./
...... ~ 1I
0
\ 0
i-
iI
f\ 1\
0
2N3634, 2N3636 \. \ 2N~35, 2N3637 II
1\ l/
0
1\
i\ 0
/
2N3634, 2N3636
.0
O. 7 l- +-- I-
O. 5
1\ 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I" EMInER CURRENT (mAl I" EMITTER CURRENT ImAI
fiGURE 9 - CURRENT GAIN fiGURE 10 - VOLTAGE FEEDBACK RATIO
200
oI\,
I \
150
~I -
2N3635, 2N3637
:1\r\ f\.. \
\
0
;'\ 1\
0
1\
L--H-I-I- .0 I'
J..- .....
2N3634, 2N3636 I\, ,
I.-- .0
2N3634, 2N~3~ NN3635,2N3637
0 .0·
1'\ )'\.
50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 S.O 7.0 10
o.7
.0
0.1 0.2 0.3 0.5 0.7 1.0

""-
2.0 3.0 5.0
r-.
7.0 10
I" (MInER CURRENT (mAl I" EMITTER CURRENT ImAI
2-556
FIGURE 11 - SATURATION VOLTAGES FIGURE 12 - TEMPERATURE COEFFICIENTS

1.0 +1.0
p,~ 10 I
r- TJ ~ 25'C
o.8
V +0. 5 l,c to -55'CI-
VBE';.:!l-- ~~
~
I-"" 125'C to 125'CI
Ove for VeE! ... )
/ 125'C.to -WCI
J
0.2 VeEI ••t)
-1.5 / ' ~"IH'I J5'C to 125'CI
f.--"
o
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
-2.0 V
o 50 100 150 200
Ie;. COLLECTOR CURRENT lmAl Ie, COLLECTOR CURRENT lmAl

P.W. ",20 p.s 2.0k
DUTY CYCLE";; 2%
RISE TIME";; 20 ns ~-lOOV
V;._ ... ~
FIGURE 14 - TURN·ON TIME VARIATIONS WITH VOLTAGE FIGURE 1 5 - TURN·OFF TIME VARmTiONS WITH CIRCUIT GAIN
1000 500o '\
CURVES APPL VTO ALL DEVICE TYPES Vee ~ 100V
700 EXCEPT WHERE INDICATED TJ ~ 25'C
300o
'\
500 p, 10 - r--c '\
'\. '\.
~ t, Vee -IOOV TJli~51'f - tfl 2000
'\
300 1'\
200 i\. i'
Vee
'"""{
~ 10V
I III I, V
2N3636·37
'\
1000
p,
~1
'\ 20
.. 100
I' 700 r-. ,..,.
.s
w 70 N3634-35 ~ 500
,'\. ......
:E
~ '\
1'111 ~-
;:::
.... 50
'\. "- 300
'\
30
I\.. p, ~ 10,\ l"'f' ~ 20 ..... ~
""
200
20
t d @ VOl ~ OV..... '\' r' "

100
10
7 70
5 50
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT ImAI Ie, COLLECTOR CURRENT lmAl
2N3647 (SILICON)
2N3648
2-557
2N3712 (SILICON)

voltage DC to VHF amplifier applications.
CASE 31
CTO-5)
MAXIMUM RATINGS

Total Device Dissipation @ TC = 25°C PD 5.0 watts
Operating and Storage Junction TJ , T
stg
-65 to +200 °c
Temperature Range
2-558
2N3712 (continued)
ELECTRICAL CHARACTERISTICS (T, = 25'C unless otherw;se noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage III BV CEO Vde
(IC = 30 mAde, IB = 0) 150 -
(IC = 100 jJAdc, IE = 0) 150 -
(IE = 100 jJAdc, IC = 0) 5.0 -
Collector Cutoff Current ICBO jJAdc
(VCB = 75 Vdc, IE = 0) - 0.1
(VCB = 75 Vdc, IE = 0, T A = 150°C) - 50
Emitter Cutoff Current lEBO jJAdc

(V BE = 4.0 Vdc, IC = 0) - 0.1
ON CHARACTERISTICS
DC Current Gain (1) hFE -
(Ic = 10 mAdc, VCE = 10 Vde) 25 -
(IC = 30 mAde, VCE = 10 Vdc) 30 150

(Ic = 50 mAdc, IB = 5.0 mAde) - 2.0
Base-Emitter Saturation Voltage 0)

VBE(sat) Vde
(IC = 50 mAdc, IB = 5.0 mAdc) - 0.9
(IC = 30 mAdc, VCE = 10 Vde, f = 20 MHz) 40 240

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1.0 9.0

(V BE = 0.5 Vde, Ie = 0, f = 1.0 MHz) - 80

(IC = 30 mAdc, VCE = 10 Vdc, 1= 1. 0 kHz)
hie
25 -
-
Collector-Base Time Constant r 'C ps
b e
(IE = 30 mAde, VCB = 10 Vde, f = 31. 9 MHz) - 100
111 Pulse Test: Pulse Width ~ 300 /J.S, Duty Cycle ~ 2.0%.
2-559
NPN silicon power transistors for medium-speed

switching and amplifier applications. Complement to
PNP types 2N3789 thru 2N3792.
CASE 11
(TO-3)
MAXIMUM RATINGS

2N3715 2N3716
C/')llector-Base Voltage VCB 80 100 Volts

f---
Emitter-Base Voltage VEB 7.0 7.0 Volts
Collector Current Ie 10 10 Amp
Base Current IB 4.0 4.0 Amp
Power Dissipation PD 150 150 Watts
Thermal Resistance e JC l.l7 1.17 °C/W
Operating Junction and T J and

-65 to +200 °c
Storage Temperature Range Tstg
2N3713 2N3715 SAFE OPERATING AREAS 2N3714 2N3716

!O
500 ,,' 500"" -
.... ;-to 250", 250", -

OClo5m, ~, 1'\ \ ~150p$ i" '\ "'\ ~
\
~
1 m'
'\ .\
K\\ '\ \
OClo5m,
-" ~ '\
\. ~\ j
\ 1\ ] <56", -
!5
~ ~ ~\ \ Ims ~
0 \~
I
LO
07 \\l - "-
_\. ~
2 0.5
~~~
0.3 '\.\\
~
0.2
O. 1
10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 80 90
VeE, COLLECTOR-EMITIER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate Ie - VCF. limits cant change in these safe areas.) To insure operation below
below which the device will not go into secondary break- the maximum T,,, the power-temperature derating curve
down. Collector load lines for specific circuits must rail must be observed for both steady state and pulse power
within the applicable Safe Area to avoid causing a collector- conditions.
emitter short. (Duty cycle of the excursions make no signifi-
2-560
Characteristic Types Symbol Min Max Unit
mAde
(vEB = 7 Vde)
lEBO
- 5.0
mAde
Collector-Emitter Cutoff Current Ie EX
(VCE = 80 Vde, VBE = -1.5 Vde)
(VCE = 100 Vde, VB!!.'" -1.5 Vde)
2N3713,
2N3714,
2N3715
2N3716
-- 1.0
1.0
(VCE = 60 Vde, VBE = -1.5 Vde, TC - 150OC)
(VCE =60 Vde, VBE = -1.5 Vde, TC = 150°C)
2N3713,
2N3714,
2N3715
2N3716
-- 10
10
Collector-Emitter Sustaining Voltage" Vde

(Ie = 200 mAde, IB = 0) 2N3713, 2N3715
2N3714, 2N3716
VCEO(sus)"
60
60
--
DC Current Galn " hFE" -
(Ie = lAde, VCE = 2 Vde) 2N3713, 2N3714 25 90
2N3715, 2N3716 ~O 150
(Ie = 3 Ade, VCE = 2 Vde) 2N3713,
2N3715,
2N3714
ZN3716
15
30 --
Collector-Emitter Saturation Voltage· VCE(sat) • Vde
(IC = 5 Ade, IB = 0.5 Ade) 2N3713, 2N3714 - 1.0
2N3715, 2N3716 - 0.8
Base-Emitter Saturation Voltage" VBE(sat) • Vde

(Ie = 5 Ade, lB = 0.5 Ade) 2N3713, 2N3714
2N3715, 2N3716
-- 2.0
1.5
Base-Emitter Voltage" Vde

VBE •
(Ie = 3 Ade, VCE = 2 Vdc) - 1.5
SmaIl Signal Current Gain hre -
(VCE = 10 Vdc, Ie = 0.5 Ade, f = I MHz) 4.0 -
Switcblng Times Typ /.&s
(Iii = 5 A, lBI = IB2 = 0.5 A)
Ise Time tr 0.45
Storage Time ts 0.3
FaIL Time Ir 0.4
*Use sweep test to prevent overheating

1.4 {
i, I _
1.2
,, ,
I'.
TJ =
25"C-
1.0 II , II
\.
'~
---- -40"C-
- - 175"C
II I 1\ ~ 1'-. SEE NOTE 2
\ I I t- r-I-
0.8
\
I
I I
Ic-SA f---
I I
0.6
\ rt~ 1.._ ....... ..... -
" \ ~ I)
"-
--
-
~ 0.4
~ -- ~
..........
\
~<- I - -- -
I ric ]A
0.2 ,
-- - - Ic IA
o
10 20 30 50 70 100 200 300 500 700 1000 2000
BASE·EMITTER SATURATION VOLTAGE VARIATIONS
1.4
; 1.2
- - - -- - -- Ic SA f---
~ 1.0 - -- -- - --- -- - - - Ie ]A
~ --- - -- -- - F F" -1":- r:;.;;=. - 1 - rr-

0.8
I~ Ic" IA
----40"C-
;~"~ -
~ If
es 0.6 --I75"C-
~ - - '-- -1- ..... +- +--- 1-
i j
0.4
SEE NOTE 2 f---
! 0.2
o
10 20 30 50 70 100 200 300 500 700 1000 2000
2-561
COLLECTOR CURRENT versus BASE CURRENT
10 10
7.0 7.0
5.0 r- 2N3713. 2M3714
II 5.0 c-- 2M3711.2N3716
3.0 ./ 3.0
2.0 2.0
A~ ~7
l 1.0 i 1.0
as'"
~
0.7
0.5
0.3
! 0.7
0.5
0.3
~ 0.2 ~ 0.2 l.flV
Irdi
f;l u
TJ~
J ~ l75°C' VeE - 2V VeE - 2V
8
:::I
0.1 'J SEE NOTES 1. 2 ~
.!J 0.1
SEE NOTES I. 2
.!J 25°C
0.07 0.07 25°C
0.05 40°C 0.05
40°C
0.03 I 0.03
V i
0.02
0.01
I " I
0.02
0.01 ~' 1/
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
I•• BASE CURRENT (mAl I" BASE CURRENT (mAl
BASE CURRENT·VOLTAGE VARIATIONS COLLECTOR CURRENT·VOLTAGE VARIATIONS

1000 10
700 -
500
~
300 "V- ./.
200 I--- VeE ~ 2V I--- -- V /, '/
100
SEE NOTE 2
V / /,
l 70
50 TJ = IWC
if VeE ~2V
SEE NOTE 2
~Cl
25°C :/ !400 C
30 / /1 /
1/ '/.'
~
20
TJ = lWC/
". 25/ '-40°C
10 II 1 11
7.0 I II
5.0
3.0
( !
2.0
1.0
a
1
0.4
:0.8 1.2 1.6
I I 0.4 0.8 1.2 1.6 2.0
V". BASE·EMITTER VOLTAGE (VOLTSI VIE, BASE·EMITTER VOLTAGE (VOlTS)
NOTE 1. Dotted line indicates metered base current plus the leBO of the transistor at 17.5°C •
NOTE 2. Pulse test: pulse width = 200 IJ,S, duty cycle = 1.,5%
TYPICAL SWITCHING TIMES
1.5
+11 5V'
---liIoI
::Lrfj
I.-t .-30 s
I'" ~
TEST CIRCUIT
Ic =5A,J 1, =IIJ=O.5A
f = 150 cps DUTY CYCLE = 2%
WAVESHAPE
ATPOINTA +30V
1.0
0.7
- ~
-9V ........
I.- -.1.-- ~
3- 0.5 :'
t... 4.8 : 13 ........ '. ,"
--"---
_1.7ms ms :E
;:::
k--
loon 20n
900n
'"z t:- '- -I- ~~
;;; 0.3
IW IW ~
~
0.2
loan
IB'T I 82
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
2-562
I - 2N3713, 2N3714 TJ~lwcl

100
b--::: -- - - ....-
__25"C
r-- -
........... .
~
h _Ie-ICBO
FE-I.+lc.o
Ve. 2V
~
-- - -I-
4O"C
..........
"'"I'-"'-....."
"'-
."'-r-
"~
.........
r-- ""- ~~ t--

o
.oI .02 .03 .05 .07 OJ 0.2 OJ 0.5 O} LO 2.0 3.0 5.0 7.0 10
Ie, COLLECTOR CURRENT IAMPI
200 I - 2N3~15 ,12N371~ I

I
----
TJ~IWC
Ie-leBO
hFE = - -
z
1j
150
I r-- ........ ...... 118+ leBO

is r-.
g; V 25"~ Ve. ~ 2V
~
1
100
---- -l- f- -l -r-. .............
...... ..........
50
t-"
- I-- f..-- -~"C
I
-..... ~
- r--- ~ :::::::: :::::::
o I ~
.01 .02 .03 .05 .07 OJ 0.2 0.3 0.5 O} LO 2.0 3.0 5.0 7.0 10
Ie. COLLECTOR CURRENT lAMP I
CURRENT-GAIN- BANDWIDTH PRODUCT versus COLLECTOR CURRENT
-- t-- r-
~ ........
.......
r--............
~
Ve. ~ 6V ~
o
OJ 0.2 0.3 0.5 O} LO 2.0 3.0 5.0
Ie. COLLECTOR CURRENT IAMPI
2-563
2N3719 (SILICON)
2N3720
PNP silicon annular power transistors for high-

CASE 31
speed, high -current switching in core, driver and
(TO·S) Class C power applications.
Collector
connected to case
MAXIMUM RATINGS
Rating Svmbol 2N3719 2N372D Unit

ColleCtor-Base Voltage VCB 40 60 Volts
Collector- Emitter Voltage VCEO 40 60 Volts
Emitter-Base Voltage VEB 4.0 4.0 Volts
Collector Current-Continuous Ie 3.0 3.0 Amp

Collector Current-Peak 10 10 Amp
Base Current IB 0.5 0.5 Amp

Total Device Dissipation @ T C = 25°C PD 6.0 Watts

Derate above 25°C 34.3 mwl'>C
Operating JWlCtion and storage TJand -65 to +200 °c

Temperature Range Tstg

2N3719 2N3720
10
7.0 SOl'S 51'S .== SOl'S 51'5 =1==
5.0
"-~ , Y ~
,r""'"--.. ~ 0 "
lI..
3.0
,,,"~ ~ms
• 5001" '"
\
\ \ ......... 5001'5 " ' I\.
\ \
\
'"
5ms
iL 1.0 \ \
~
...i5
..,'"::0'"
0.7
0.5 ... '- , \ ... ... ......
0.3
~ p. @ Te=25~
..
~
\
, ........ '"-.'-. \.
\ 1\
\ \
\
" ~ --
'"
0 P.@Te =25OC ....
~..,
0
0.1
I', ---
~ .\\ " ~
~ 1
\
.9
.07
.05
.03
~ f-- p. @ T. = 25°C ....
BVcoo @ Ie = 20mA -
- ~
---."'
...
I p. @I T'=j50 C - - -- 1---
BVCIO @l e =20mA:--1"""
'III.:
......
.01
o 10 20 30 40 0 10 20 30 40 SO 60
VCI. COUECTOR-EMmER VOLTAGE (VOLTS)
2N3719 and 2N3720 (continued)

Collector Leakage Current lCEX I'Adc
(VCE = 40 Vdc, VBE = 2 Vdc) 2N3719 - 10
(V CE = 60 Vdc, VBE = 2 Vdc) 2N3720 - 10
Collector-Base Cutoff Current mAde

leBO
(VCB = 40 Vdc, IE = 0, TA = 25°C) 2N3719 - 0.010
(VCB = 40 Vdc, IE = 0, TA = 150°C) 2N3719 - 1.0
(VCB = 60 Vdc, IE = 0, T A = 25°C) 2N3720 - 0.010

(V CB = 60 Vdc, IE = 0, T A = 150°C) 2N3720 - 1.0

(VBE = 4 Vdc, lC = 0) - 1.0
DC Current Gain (1)

(Ie = 500 rnA, VCE = 1.5 V, T A = 25°C)
hFE
20 -
-
(Ie = 1 A, VCE = 1.5 V, TA = 25°C) 25 180
(IC = 1 A, VCE = 1.5 V, TA = _40°C) 15 -
Collector-Emitter Saturation Voltage 111 VCE(sat) Volts
(Ie = 1 A, IB = 100 mA, T A = -40 to + 100°C - 0.75
(Ie = 3 A, IB = 300 mA, TA = 25°C) - 1.5
Base-Emitter Saturation Voltage' 111 VBE(sat) Volts

(IC = 1 A, IB = 100 rnA) - 1.5
(Ie = 3 A, IB = 300 rnA) - 2.3
Collector-Emitter Breakdown Voltage (11 BVCEO Volts

(Ie = 20 rnA, IB = 0) 2N3719 40 -
2N3720 60 -
(VCB = 10 Vdc, IE = 0, f = 100 kHz) - 120

(VBE = 0.5 Vdc, Ie = 0, f = 100 kHz) - 1000

(VCE = 10 Vdc, Ie = 500 mAdc, f = 30 MHz ) 60 -
Turn-On Time ton ns
Uc·= 1 Adc, IBI = 100 mAl - 100
Turn - Off Time

toff ns
(Ie = 1 Adc, IBI = IB2 = 100 rnA) - 400
III Pulse Test: Pulse Width ~ 300 p,s, Duty Cycle $ 2.0%.
2-565
BASE EMITTER SATURATION VOLTAGE VARIATIONS
1.4
~
0
Z,
~
'"~ 1.2
------- ... ----
-- - t::;.;: -~
~
z:
0
~ 1.0
-- -- --
r-'
Ie _I A
,~ ....-:::: le= 3 A
- -
~ Ie =0.3 A .... ---
'" 0.8
1=
- - - ,...-I- - - - -
:iii
--
I"-
....
~
- 0.6
-- 40·C
.j
j -- 2S·C
--I ISO·C
0.4
10 20 40 60 80 100 200 400 600 700
I•• BASE CURRENT (mA)
COllECTOR·EMITIER SATURATION VOLTAGE VARIATIONS
~
~
~
1.4
1.2 \ ,
I
1\
,
~ \ \ \
~ \
~ 1.0
\\ \
, \
\
1\ ---40·C-
- 25·C
i 0.8 \ \ -- 150·C._
~
, \1 I~,
\ \
I
~ 0.6
\ \ \',~ \
.~
:iii
~ 0.4 ... ""-
"- r- -1- '-
; 0.2
o
'" ~
----
~ io-..
-- --
-- Ie- 0.3 A
- -- Ie I ~
lel=~ ~
I
I 4 8 10 20 40 60 80 lao 200 400 600 800 1000
I •• BASE CURRENT (mA)
120
z
100
150'C
-
- -r--. ~ Vel = 2 V
- ----~ '-....
2S·C
~ 80
~
Ii! r- r--.
'"::><.>
60
J
~"
...............
- ---
-40'C
40 .....
20 ~
0.1 0.2 0.4 0.6 0.8 2
I", COLLECTOR CURRENT (AMP)
2-566
BASE CURRENT - VOLTAGE VARIATIONS COLLECTOR CURRENT vs BASE·EMITTER VOLTAGE
100 10
60 6
40 4
20 / / / i'$ 2 A ~
C
.5 10
Vea = 2 V
/ VI i'"' 0.61
Vea = 2 V V/ ./
.... 6
t! 4 50.4
'"u'~"' 2 / I II !t; O. 2 1. L
...c 1500 e I 25 0 e/ -40 oe ~
so. 1
l5ooe/ 25 oe/ 1-40 e
o
~ u
0.6 .2 .06
0.4 .04
J..
0.2 .02 -'-
0.1
0.2 0.4 0.6 0.8 1.2
.0 1
0.2
11 1 1.4
1.0 0.4 0.6 0.8 1.0 1.2
VR. BASE.£MITTER VOlTAGE (VOLTS) v•. BASE.£MITTER VOLTAGE (VOLTS)
2-567
2N3726 (SILICON)
2N3727
DUAL PNP SILICON

ANNULAR TRANSISTORS PNPSILICON
AMPLIFIER
TRANSISTORS
... a matched pair of silicon bi-polar devices in a single package. De-
signed for general-purpose differential amplifier applications.
• Collector-Emitter Breakdown Voltage -

BVCEO = 45 Vdc (Min) @ IC = 10 mAde
• Low Noise Figure -

NF = 4.0 dB (Max) @ IC = 30/lAdc
• Low Base-Emitter Voltage Differential -

IVBE1 - VBE21 = 2.5 mVdc (Max) (2N3727)
PINS 4 AND B OMITTED
Pin Connections.
BOHom View
All Leads Electrically Isolated from Case
MAXIMUM RATINGS
Rating
~:~~~OIA~
Svmbol Value Unit
31[
0.305 DIA 0.165
Collector-Base Voltage VCB 45 Vdc 1f.:rnI if.TS5"

~~~
Collector-Current
Base Current
IC
IB
300
100
mAde
mAde
~ if.i!l9
0.500
MIN
Operating and Storage Junction T J. Tstg -65 to +200 °c ~ --.l.

Temperature Range
One Both
Pin 1. Collector 1
Side Sides 2. Bass 1
Total Device Dissipation@TA = 2SoC Po 400 500 mW 3. Emitter 1
mW/oC 5. Emitter 2
Derate above 25°C 2.29 2.86 6. Base2
Total Device Dissipation @ T C = 25°C 7, Collector2
Po 0.B5 1.4 Watt
Derate above 25°C 4.B5 B.O mW/oC

All leads Electrically ISOlated from Case
CASE 654·04
·'ndicates JEDEC Registered Data
*ELECTRICAL CHARACTERISTICS (each side) (TA = 25°C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (11 BVCEO 45 - Vde
(IC: 10 mAde, IB: 0)
(lC: 0.01 mAde, IE : 0)
(IE: 0.01 mAde, IC: 0)
(VCB: 30 Vde, IE: 0) - 10 nAdc
(VCB: 30 Vde, IE: 0, TA: 150°C) - 10 /tAde
Emitter Cutoff Current lEBO - 0.1 /tAde

(VBE: 3.0 Vde, IC: 0)
ON CHARACTERISTICS
(lC: 0.01 mAde, VCE : 5.0 Vde) 80 -
(lC: 0.1 mAde, VeE: 5.0 Vde) 120 -
(Ie: 1.0 mAde, VCE: 5.0 Vde) 135 350
(Ie: 50 niAde, VCE: 5.0 Vde) (1) 115 -
Collector-Emitter Saturation Voltage (1) veE (sat) - 0.25 Vde
(IC: 50 mAde,IB: 2.5 mAde)
Base-Emitter Saturation Voltage (1) VBE(sat) - 1.0 Vde
(Ie: 50 mAde, I B : 2.5 mAde 1
Current-Gain-Bandwidth Product (2) fT MHz
(lC: 1.0 mAde, VCE: 10 Vde, f: 20 MHz) 60 -
(lC: 50 mAde, VCE: 20 Vde, f: 100 MHz) 200 600

(VCB: 10 Vde, IE: 0, f : 1.0 MHz)
Input Capacitance Cib - 30 pF
(VEB: 0.5 Vde, IC: 0, f: 1.0 MHz)
I nput Impedance hie - 11.5 k ohm
(lC: 1.0 mAde, VCE: 10 Vde, f: 1.0 kHz)
Voltage Feedback Ratio h re - 15 X 10-4
Output Admittance hoe - 80 J.Lmhos
(lC: 1.0 mAde, VCE: 10Vde,f: 1.0kHz)
Noise Figure NF - 4.0 dB
(Ie: 30/tAde, VCE: 5.0 Vdc, RS: 10 k ohms, f: 1.0 kHz,
B.W. : 200 Hz)
DC Current Gain Ratio (3) hFE1/hFE2 0.9 1.0 -
(lC: 0.1 mAde to 1.0 mAde, VCE : 5.0 Vde)
Base-Emitter Voltage Differential [VBE 1-V BE2[ mVde
(lC: 0.1 mAde to 1.0 mAde, VCE: 5.0 Vde) 2N3726 - 5.0
2N3727 - 2.5
Base-Emitter Voltage Differential Change ~(VBE1-VBE2 mVde

(lC: 0.1 mAde to 1.0 mAde, VCE : 5.0 Vde, 2N3726 - 1.6
T A: -55 0 e to +25 0 C) 2N3727 - 0.8
(lC: 0.1 mAde to 1.0 mAde, VCE: 5.0 Vde, 2N3726 - 2.0
T A: +25 0 e to + 125°C) 2N3727 - 1.0

(1) Pulse Test: Pulse Length = 300 J.Ls, Duty Cycle == 1.0%. (2) fT is defined as the frequency at which Ihfel extrapolates to unity.
(3) For purposes of this ratio, the lowest hF E reading is taken as hF E 1.
2-569
2N3733 (SILICON)
NPN silicon transistor designed for amplifier, fre-

quency multiplier, and oscillator applications.
CASE 36
(TO·60)
MAXI MUM RATI NGS ITA = 25°C unless otherwise noted)

Collector-Emitter Voltage VCEV 65 Vdc

(VEB (off) = 1. 5 Vdc)
Collector Current IC 3.0 Amps
Total Device Dissipation @ T A = 25°C PD 23 Watts

Derate above 25°C 0.13 W/"C
Operating and Storage Junction Temperature Range T J,T stg -65 to +200 °c
FIGURE 1 - 400·MHz TEST CIRCUIT

+Vcc=28V
2-
STUB
TUNER
3-
STUB
TUNER
Zs = 500
7.8-17 pF
7.8-17 pF
2-570
2N3733 (continued)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage 11) BVCEO Vdc
(IC = 0 to 200 mAdc, IB = 0) 40 - -
Collector-Emitter Breakdown Voltage 11) BVCEV Vdc
(IC = 0 to 200 mAdc, VEB(off) = 1. 5 Vdc) 65 - -
(I C = O. 5 mAdc, IE = 0) 65 - -
(IE = 0.25 mAdc, IC = 0) 4.0 - -
Collector Cutoff Current I CEO mAdc
(VCE = 30 Vdc, IB = 0) - - 0.25
ON CHARACTERISTICS
(IC = 500 mAdc, IB = 100 mAdc)
(I C = 150 mAdc, VCE = 28 Vdc, f = 100 MHz) - 400 -
(VCB = 30 Vdc, IE = 0) - - 20
Collector-Case Capacitance Cs - - 6.0 pF
Base -Spreading Resistance

, Ohms
rbb
(IC =250 mAdc, VCE = 28 Vdc, f = 200 MHz) - 6.5 -
FUNCTIONAL TEST
Power Output VCE = 28 Vdc, P in =4W, Pout - 14.5 - Watts
Efficiency f = 260 MHz 1) - 60 - %
Power Output VCE = 28 Vdc, Pin = 4 W, P
out
10 - - Watts
Efficiency f = 400 MHz (Figure 1) 1) 45 - - %
111 Pulsed through a 25 mH inductor; duty cycle = 50%
2-571
2N3734 (SILICON)
2N3735
2N3736
2N3737
\~ Medium current NPN silicon annular transistors de-

signed for high-speed switching and driver applications.
CASE 26 CASE 79
(TO-46) (TO-39)
2N3736 2N3734
2N3737 2N3735
Rating Symbol 2N3734

2N3736
2N3735
2N3737 Unit
TO-39 TO-46
2N3734 2N3736
2N3735 2N3737
Total Device Dissipation @ T A = 25°C PD 1.0 0.5 watt
Total Device Dissipation @ T C = 25°C PD 4.0 2.0 Watts

Thermal Resistance °C/mW

Junction to Ambient 8JA 0.175 0.35
Junction to Case 8JC 0.044 0.088

St.orage Temperature Range Tstg -65 to +200 °c
2-572
2N3734, 2N3735, 2N3736, 2N3737 (continued)
I Characteristic I Symbol IMinlMaxl Unitl

OFF CHARACTERISTICS
Collector-Sase Sreakdown Voltage SVCSO Vdc
(Ie = 10 p.Ade, IE = 0) 2N3734, 2N3736 50 -
2N3735, 2N3737 75 -
Collector-Emitter Sreakdown Voltage 111 SVCEO Vdc
(Ic = 10 mAdc, IS = 0) 2N3734, 2N3736 30 -
2N3735,·2N3737 50 -
Emitter-Sase Sreakdown Voltage SV ESO Vdc
(IE = 10 p.Adc, Ie = 0) 5.0 -
Collector Cutoff Current Ie EX p.Adc
(VCE = 25 Vdc, VES = 2 Vde) 2N3734, 2N3736 - 0.20
(VCE = 25 Vde, VES = 2 Vde, TA = 100OC) - 20
(VCE = 40 Vde, VES = .2 Vdc) 0 2N3735,2N3737 - 0.20
(VCE = 40 Vdc, VES = 2 Vde, TA = 100 C) - 20
Sase Cutoff Current ISL p.Adc

(VCE = 25 Vdc, VES = 2 Vde) 2N3734,2N3736 - 0.3
(VCE = 40 Vdc, VES = 2 Vdc) 2N3735, 2N3737 - 0.3
ON CHARACTERISTICS
- -
DC Current Gain III hFE
(Ie = 10 mAdc, VCE = 1 Vde) 35
(Ie = 150 mAde, VCE = 1 Vdc) 40 -
(Ie = 500 mAde, VCI1 = 1 Vde)
(Ie = 1 Ade, VCE = .5 Vdc) 2N3734, 2N3736
35
30
-
120
2N3735, 2N3737 20 80
--
(Ie = 1.5 Ade, VCE = 5 Vde) 2N3734, 2N3736 30
2N3735, 2N3737 20
Collector Saturation Voltage III VCE(sat) VQC

(Ie = 10 mAdc, I~ = 1 mAde) - 0.2
(Ie = 150 mAde, S = 15 mAde) - 0.3
(Ie = 500 mAde, IS = 50 mAde) - 0.5
(Ie = 1 Ade, IS = 100 mAde) - 0.9
Sase-Emitter Saturation Vo1tage lll VbE(sat) Vdc

(Ie = 10 mAde, Is = 1 mAde) - 0.8
(Ie = 500 mAdc, IS = 50 mAde) '- , 1 .1.2
0
(Ie = 1 Ade, IS = 100 mAde) 0.9 1.4
_..
(V CB = 10 Vde, IE = 0, f = 100 kHz) - 9.0

(V BE = 0.5 Vde, IC = 0, f = 100 kHz) - 80
High-Frequency Current Gain

(Ie = 50 mAde, VCE = 10 Vde, f = 100 MHz)
hte
2.5 -
-
Delay Time (VC C = 30 V,VBE(off). 2 V, td - 8.0 ns
= 1 Amp, lB1 = 100 mA)
Rise Time Ie
tr - 40 ns
Storage Time
(VCC = 30 V,Ie = 1 Amp,
ts - 30 ns
IBl = -IB2 = 100 mAl
Fall Time tr - 30 ns

(Ie = 1 Amp, IB = 100 mA, VCC = 30 V) - 10
lliPulse Test: PW ;a 300 p.s, Duty Cycle ~ 2%
2-573
2N3734, 2N3735, 2N3736, 2N3737 (continued)
"ON" CONDITION CHARACTERISTICS

FIGURE 1
DC CURRENT GAIN
300
II -lve'~IJ
-- -- -
200
I I
TJ ~ l75°C
-- -- --t- --
-r- -- - -- Ve,~ lOY
-- -- - -
r:;::.::- ~ r-- - ~~ -
150
~ --
-- -- --1--1- I- :--
.......
r-
§ 100
~ -- TJ 100°C -
-- - --
I-" -1--: I- --:;.0.. p.- c----., ~
~ ..:s
1 70
!--
-
fw-"
- --
TJ ~ 25°C
- T -- 55°C -- - r- - - ~
50
30
-- ::;::;::- ~
--- .::::. r:=-=- I-- r-

- ;:;:..-I-- J
:--r-- '""- r\:
~
r--~~
1.0 2.0 5.0 10 20 50 100 200 500 1000
Ie, COLLECTOR CURRENT ImAl
COLLECTOR SATURATION REGION

1.0
I
in TJ~25°C
c::; 0.8 This graph shows the effect of base current on collector current. fie (cur·
~
~ l\ I rent gain at the edge of saturation) is the current gain of the transistor at I
volt, and (if Iforced gain) is the ratio of Ie/I" in a circuit. EXAMPLE: For type
~
CO>
;"'.
0.6
. . . r--- ,I
Ic-IA _ t---
2N3734, estimate abase current 0,,) to insure saturation at a temperature of
25"C and a collector current of 500 rnA.
ffi
~
1\ I Observe that at Ie = 500 rnA an overdrive factor of at least 2.0 is required
~
oC 0.4
1\ "- "'- 500mi
to drive the transistor well into the saturation region. From Figure I, it is seen
that hFE @ I volt is typically 54 Iguaranteed limits from the Table of Char·
S' acteristics can be used for "worst·case" design). .'.
\'
~
8 0.2
. . r-::: r-- 150 rnA
54
I" = 18.5 mA typ
rJ
:>
2~---
500 mA/l"
lOrnA
I
f30/ f3" OVERDRIVE FACTOR
"ON" VOLTAGES TEMPERATURE COEFFICIENTS

1.2 +2.0
I I I I I
"" L-t::::
---
_ TJ~25°C I II +1.5
1.0
2 I I IJCTOJ5 0 C
~loooC
-
.1 I
VIE I"') Ie/I, ~ 10 +1.0 I.---"'"
IJvc fOR Ve'(H'1
i!!
g
0.8 .J.-..t" ""'1--- G ~~t:::= ~25°C
~
I-" ~ +0.5
V,,@Ve,=IV
~
i:!: O:ti § ~-
5!
~ 0.4
~
i -0.5
25°CTOIWC
-1.0
f-'i-""'" 9v. fOR VIE
0.2 -I~ 55°C TO 25°C
f-'" Ve'(H'1 (ell, ~ 10
-1.5
10 20 30 50 100 200
j II
300
I I II
500 1000
-2.0 l2:r 100 200 300 400 500 600 700 800 900 1000
Ie, COllECTOR CURRENT (mAl le,COLlECTOR CURRENT ImAl
2-574
2N3734, 2N3735, 2N3736, 2N3737 (continued)

TRANSCONDUCTANCE INPUT ADMITTANCE
1000 , I 20
J.
700
f-- VeE~ 10V
/
10
I I "/
500 I I VeE 10V
400 I I I
I
5.0
300 / I
I
I I
~ 200
II I I 2.0
/ J I
is ~ I I
Il1
G 100
TJ ~ 175°C
is
Il1 1.0
TJ~IW / 25°C I -55°C
~
25°C B
~ 70 55°C
i
~ 0.5
~ I I
50
40
1/ I
I
30 0.2
20
/
I 0.1
10 I 0.05
0.2 0.4 0.6 0.8 1.0 1.2 o 0.2 0.4 0.6 0.8 1.0 1.2
VIE, BASE-EMITTER VOLTAGE (VOLTS) VIE, BASE-EMITIER VOLTAGE (VOLTS)
"OFF" CONDITION CHARACTERISTICS

TRANSCONDUCTANCE EFFECT OF BASE·EMITTER RESISTANCE
10' 10>
= ~'VeE"30V
= VeE 30V
,IWC
- TJ ~ 175°C
,/
.". I 10> 1/
10'
l'J'100°C
~ II I
; 10
TJ 100°C
I
~ 1.0
V
10-1
)
TJ 25°C 10- 1 TJ '2S"C
~ I- REVERSE- ~FORWARD t+
10-'
t - I- I I- I I 10-'
0.2 0.1 0.1 0.2 0.3 0.4 0.5 10> I1J4 I()I 1()6 10'
VIE, BASE-EM)TTER VOLTAGE (VOLTS) RIE, EXTERNAL BASE·EMITIER RESISTANCE (OHMS)
2-575
2N3734, 2N3735, 2N3736, 2N3737 (continued)
_TJ=25·C -- TJ= 150·C
TURN-ON TIME RISE AND FALL TIMES

100 100 I'S.
70 ."'\. "" ~
70
."1.
~
Vee
lell.-IO
30V
lell.- IO
\1'\. ~ 50 ~
50
1'\ ~ ~~ If
30
\\ 1'\
30 '"
....r.
\1,\ '" 1"""- I.
I Vee -30V ~
i;::: 20 I\.\. ""'- ~ 20 ~ I
...... ~
\1\ \
'\. 1.1""
;:::
-c=:r. If
./' Vee -lOY
~
10 Id 10
VOl
Voo-2V
'\.
AI'"
,
10 20 50 lOll 200 500 1000 10 20 50 lOll 200 500 1000
Ie. COllECTOR CURRENT (rnA) Ie. COLLECTOR CURRENT ImAl
STORAGE TIME FALL TIME

100 100 I I I_
1,,--1..
70 t'.-t,-IH 70 . " lell.- 2O
1,,--1..
Vee- IOV
50
.... - ,..1-"
1e1l.-2O 'Ii
"'::l~_...
50
" "
~ ~,
-
~
:g 30
I I
! 30
I\. \:
! . .1- -I. ':
,;., "
w
I
t;
20
/'
.,.,..~ I
Ieli. -10
I
i!!
::l
i:f
~
20 r- le/l. -10
['\\ ......
'\ ~ r-.::
_""
.: I-'
,/' 1---' ....
........ ......... ~I-'
10 10
10 20 50 lOll 200 500 1000 10 20 50 100 200 500 1000

Ie. COllECTOR CURRENT (rnA) Ie. COlLECTOR CURRENT (rnA)
TURN·ON TIME TURN·OFF TIME

p, w. "'" 200ns HOY HOY
RISE TIME"'" 2 ns 30n 30Q
DUTY CYCLE"'" 2% +II.lY
lOOn
+nn~
V,. Vin
loon
I, IN916
V11I - --- - 0 10 < I, < 500 uS
-2Y I, < Sns
-=- 1.>11"
DUTY CYCLE - 2%
2-576
2N3734, 2N3735, 2N3736, 2N3737 (continued)
CHARGE DATA CAPACITANCE

10 100
III
0.7
I-- r- Vcc~30V 70 !-I- III
5.0 r- r- /cll.= 10 IVJ~i5°CI -
I-- r-- --
- TJ =' 25°C 50
r---
TJ = 150°C I'.
Cib ~
/ V 30
2.0
l V
~
~
III 1.0
j/ !ltV ~
20
i
<.)
d 0.7
/
/0..-
I
0.5 10 ~
/' ~ / ~
./'V 1/ 7.0 Cob

V V I'
0.2 ~V
5.0
0.1 3.0
10 20 50 100 200 500 1000· 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
Ie. COlLECTOR CURRENT ImA) REVERSE BIAS IVOLTS)
ACTIVE REGION SAFE OPERATING AREAS

3.0
[\
""" '"""I~ " ~ '"

2.0 1\
\.
1.0
'" "-
" ......... ' .......
100 p.S
.......
SOILs
-.....
.......
~
'"
:$
ffigg
0.5
0.3 ~ ,Cr--.. ~
1ms
r---..... .......
-............
t--
.......
t---.
-............
f"-....
............. ,......... ..........
13
0.2 .......
r-- ~
--. 1"---..
t---..
.........
~
---- -----
......
I 0.1 r---- .............
j}
I- The Safe Operating Area Curves indicate le·VeE limits
~ below which the de\/ic~s. win not go into secondary break-
.05
r-
down. As the safe operatmg areas shown are independent of
temperature and duty cycle, these curves can be used as
= -
.03 I- long as thermal IMax rating table) is also taken _
re~stance I-- 2N3734 2N3736
into consideration to insure operation below the maximum 2N3735 2N3737
.02 f- junction temperature .
I I I
.01
o 10 20 30 40 50
VeE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
2-577
2N3738 (SILICON)
2N3739
~
High-voltage NPN silicon power transistors, de-
signed for use in line operated equipment such as audio
CASE 80 ~ output amplifiers; low-current, high-voltage converters;
(TO-66) and AC line relays, featuring excellent dc gain.


6.0
Collector Current (Peak) IC 3.0 Amp

Derate above 25 0 C 0.133 wloc
Thermal Resistance
°JC 7.5 °C/W
Junction Operating and Storage T J , Tstg -65 to +175 °c

Temperature Range
20
~
~
16 " ............
..............
.........
z 12 ~
0
>= ..............
~
~ 8 ..............
is .............
f5 ..............
~ 4 .........
~
....Q ..............
o
o 25 50 75 100 125 150 175
Tc. CASE TEMPERATURE (DC)
2-578
I Characteristic Symbol IMin IMax I Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
VCEO(sus) Vdc
(IC = 5 mAdc, IB = 0) 2N3738 225 -
2N3739 300 -
(V EB = 6 Vdc) - 0.1
(VCE = 250 Vdc, VBE = 1.5 Vdc) 2N3738 - 0.5
(VCE = 300 Vdc, VBE = 1.5 Vdc) 2N3739 - 0.5
(VCE = 125 Vdc, VBE = 1.5 Vdc, TC = lOO°e) 2N3738 - 1.0
(VCE = 200 Vdc, V BE = 1.5 Vdc, TC = lOO°e) 2N3739 - 1.0
Collector-Emitter Cutoff Current I CEO mAdc
(VCE = 125 Vdc, IB = 0) 2N3738 - 0.25
(V CE = 200 Vdc, IB = 0) 2N3739 - 0.25
(VCB = 250 Vde, IE = 0) 2N3738 - 0.1
(VCB = 325 Vde, IE = 0) 2N3739 - 0.1
ON CHARACTERISTICS
DC Current Gain (1) hFE -
(IC = 50 mAde, VCE = 10 Vde) 30 -
(IC = 100 mAdc, VCE = 10 Vde) 40 200
(IC = 250 mAdc, VCE = 10 Vde) 25 -
Collector-Emttter Saturation Voltage (1) VCE(sat) Vdc
(IC = 250 mAdc, IB = 25 mAde) - 2.5
Base- Emitter Voltage (1) VBE Vde
(Ic = 100 mAde, VCE = 10 Vde) - 1.0
TRANSIENT CHARACTERISTICS
Current-Gain -Bandwidth Product fT MHz
(IC = 100 mAde, VCE = 10 Vde, f = 1. 0 MHz) 10 -
(VCB = 100 Vde, IC = 0, f = 100 kHZ) - 20
(IC = 100 mAde, VCE = 20 Vde, f = 1 kHz)
hfe
35 -
-
(1)PULSE TEST: PW ~ 300 IJ.S, Duty Cycle ~ 2%
ACTIVE REGION SAFE AREAS
3.0
2.0 r\. r\. ~ ........
2N}738
"'{.... 10",
~ "- AND 50", r-.... le·Ve, limits below which the device will not
i'.. -t--I--
I"
"
2N3739 go into secondary breakdown. Collector
1.0
.
Ii: 0.5
500", 2N3739==
ONLY -
causing a collector·emitter short. (Case
s t-.. 1 m, temperature and duty cycle of the excur·
~ 0.3 "-
..........
r-..
t-.. 5m, ~
.........
- sions make no significant change in these
safe areas.) The load line may exceed the
B
-
0.2
........ r--.... B.VeEo voltage limit only if the collector cur·
~
I
rent has been reduced to 20 mA or less be·
0.1 t---... r- fore or at the BVeEolimit; then and only then
may the load line be extended to the abso·
lute maximum voltage rating oi BVelO. To
..Q 0.05 insure operation below the maximum T"
0.Q3
0.02
0.01
40 80 120 160 200
r--..
r-
240
- 280 300
the power-temperature derating curve must
be observed for both steady state and pulse
power.conditions.
VeE. COLlECTOR·EMtTIERVOlTAGE (VOLTS)
2-579
CURRENT GAIN
300
I I
200 .. - VeE lOV r--
I TJ --1175'~ --r-
I-- - VeE 2V r--
z: 100
TJ
.1
+lOO'C
-- -- t- ---~
- -. -... ---- --
--
--
~
;1 70 '",-
.
-
50 L--' +25'C I
i""' TJ .- :-- .:-.. .;-,
~ --- - - ---- D: ~ -'l.. -- ,
- '--
30
J i"""" ~~ ~
20 f- TJ ~
~
I ......
-5~'C
i-"" to- \ 1\'"'
10 ~ ~ ~"
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
Ie. COLLECTOR CURRENT ImAI
"ON" VOLTAGES CAPACITANCE

1.0 300
I I 11 I
L.I TJ ~ +25'C
I I I_III I 200
0.8 VeE1"'1@ lell, ~ 10 """VI-i t--
lell, ~ 10 I ......-: :..- t1 r'--I'
~ 0.6
V,,@Ve , IOV / ~
100
~ / ~
;;;
70
~ 50
~ 0.4 / / ~ C,.
V 1/ <3
30
r-
J-- VeE(ut) lell, ~ 10
0.2
.... lell,
- ....
1-1-
5
V TJ ~
I I I
+25'C I- 20
I'
r-
I I 10
10 20 30 50 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Ie. COLLECTOR CURRENT ImAI REVERSE BIAS VOLTAGE (VOLTSI
TURN-ON TIME TURN-OFF TIME
10 10
5.0 lell, 10 le/ l• 10
~ .... 1,- f- • - Vee -,300 V. Vo• "",2 V

5.0
I"
2.0
i- "'c- Id
ITYPE 2N3739 ONLYI l"- ts
~
1.0
0.5
-Vee ·100 V
I
2.0 i'-.
'" ."- ,
!
-"
0.2
0.1
~
'">=
1.0
0.5
" . If
~ Vee ~ 100V
0.05
l'f~ ~
0.02 r-- 0.2 Vee ~ 300V
- (TY~E 2N3739 ONLYI I II
0.01 0.1
1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 20 50 100 200500
Ie. COLLECTOR CURRENT (mAl Ie. COLLECTOR CURRENT IrnAI
2-580
LARGE SIGNAL CHARACTERISTICS CUT-OFF CHARACTERISTICS
TRANSCONDUCTANCE TRANSCONDUCTANCE
500 10
I / / I
iL - VeE ~ 200V IL
f--- VeE ~ IOV
I / / I I V II II
200
~
t- TJ~+IWc
/ / I I ./
1.0
TJ~+IWc ...../ J I
100 I 1
/ I
~ 50 f--- r- TJ +IOO°c
f-I..
«
s 0.1 1. 1
I I
I
+ 100°C
I I II 7 TJ
TJ ~ +25°c II I I
~
~
20
rr----r-- I I ~::i
1
8
~ 10 I r7 I 0
'-'
2
O.oJ
TJ ~ +25°c
......-
TJ ~ -55°C
I I
I I 0.001
0.2
I
I
I
II
0.4
I
I
0.6
II
II
0.8
0.0001
0.6
- 0.4
REVERSE B)AS
0.2
FORWARD BIAS
0.2
t-
0.4 0.6 0.8

1.0
V",BASE·EMIITER VOLTAGE (VOLTS) V", BASE-EM lITER VOLTAGE (VOLTS)
INPUT ADMITTANCE EFFECT OF BASE-EMITTER RESISTANCE
10 10
VeE ~ 200V
5.0
I
I
I I
I IiT
J ~ +175°C
.... +-
2.0 / I I II 1.0
I I
TJ I~ +l75°c__
1.0
V II
~ 0.1
~ 0.5 - - TJ ~ + 100°C ffi
ffi ~
TJ +lOO°c
~ I rt--. .J I I B
~
~
0.2
0.1
c--- TJ ~ +25°c
I
-L
/
II
II
7r-~
I
I
It--~
I
I~
0.01
TJ 55°C ::
TJ +WC
0.05
0.001
I I I
0.02 I II I
I I' I I
0.01 I I I 0.0001
0.2 0.4 0.6 0.8 1.0 10 102 10' 10< 10' 1()6 10'
VIE, BASE-EMIITER VOLTAGE (VOLTS) R.., BASE·EMIITER RESISTANCE (OHMS)
2-581
2N3740, A(SILICON)
2N3741, A
POWER TRANSISTORS
MEDIUM-POWER PNP TRANSISTORS
PNPSILICON
60-80 VOLTS
25 WATTS
· .. ideal for use as drivers, switches and direct replacement of
germanium medium·power devices. These devices feature:
• Low Saturation Voltage -

VCE(sat) = 0.6 Vdc@ IC = 1.0 Amp
• High Gain Characteristics -
hFE = 30-100@ IC = 250 mAdc
• Direct Substitution for Germanium Equivalents
• Excellent Safe Area Limits (See Figure 2)
• Low Collector Cutoff Current -
100 nA (Max) 2N3740A, 2N3741A
• Complementary to NPN 2N3766
(2N3740) and 2N3767 (2N3741)
*MAXIMUM RATINGS
2N3740 2N3741
Rating Symbol Unit
2N3740A 2N3741A
0.250
Vdc
~:;~ OIA 0.340
Collector-Emitter Voltage VeEO 60 80
Emitter-Base Voltage VE8 7.0 7.0 Vdc
80 vdc /~
Collector-Base \f.oltage VeB 60
Collector Current - Continuous Ie 4.0 Adc ""!
- Peak INote 1) 10 0.050
0.075
Base Current 18 2.0 Adc 0.360
Total Device Dissipation@Tc=250C Po 25 Watts ~~l: OIA MIN
Derate above 2SoC 0.143 Wloe
Operating and Stor~ge Junction TJ.Tstg -65 to +200 °e
Temperature Range
Note 1: See Figure 2
FIGURE 1 - POWER·TEMPERATURE DERATING eURVE

5
~ I'-...
~
~
~
~
0
...........
........ CASE 80
o
o 50 Ion 125 150 175
~200 (TO·66)
COLLECTOR CONNECTED TO CASE

25
TC ,TEMPERATURE 1°C)
Safe Area Curves are indicated by Figura 2.
Both limits are applicable and must be observed.
-Indicates JEOEC -Registered Data.
2-582
2N3740,A, 2N3741,A (continued)
*ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage <D 2 VCEO(sus) <D Vde
(lC = 100 mAde, IB = 0) 2N3740, 2N3740A SO -
2N3741,2N3741A BO -
Emitter Base Cutoff Current - lEBO
(VEB = 7.0 Vde) 2N3740,2N3741 - 0.5 mAde
2N3740A,2N3741A 100 nAde
Collector Cutoff Current 5,SCi) ICEX
(VCE = SO Vde, VBE(off) = 1.5 Vde) 2N3740 - 100 ",Ade
2N3740A - 100 nAde
(VCE = 80 Vde, VBE(off) = 1.5 Vde) 2N3741 - 100 ",Ade
2N3741A - 100 nAde
(VCE =40 Vde, VBE(off) = 1.5 Vde, TC = 1500 C) 2N3740 - 1.0 mAde
2N3740A - 0.5
(VCE = SO Vde, VBE(off) = 1.5 Vde, TC = 1500 C) 2N3741 - 1.0 mAde
2N3741A - 0.5
Colleetor-E mitter Cutoff Current 5,SCi) ICEO
(VCE = 40 Vde, IB = 0) 2N3740 - 1.0 mAde
2N3740A - 1.0 ",Ade
(VCE = SO Vde, IB = 0) 2N3741 - 1.0 mAde
2N3741A - 1.0 ",Ade
Collector Base Cutoff Current - ICBO
(VCB = SO Vde, IE = 0) 2N3740 - 100 ",Ade
2N3740A - 100 nAde
(VCB = 80 Vde, IE = 0) 2N3741 - 100 ",Ade
2N3741A - 100 nAde
ON CHARACTERISTICS
OC Current Gain 7 hFEQ) -
(lC = 100 mAde, VCE = 1.0 Vde) 40 -
(lC = 250 mAde, VCE = 1.0 Vde) 30 100
(lC = 500 mAde, VCE = 1.0 Vde) 20 -
(lC = 1.0 Ade, VCE = 1.0 Vde) 10 -
Colleetor-E mitter Saturation Voltage 8,9,10 VCE(sat)Q) - 0.5 Vde
(lC = 1.0 Ade, IB = 125 mAde)
Base-Emitter Voltage 3,4,9,10 VBEG) - 1.0 Vde
I (lC = 250 mAde, VCE = 1.0 Vdc)
Current-Gain-Bandwidth Product - fr MHz
(lC = 100 mAde, VCE = 10 Vdc, f = 1.0 MHz) 4.0 -
Common 8ase Output Capacitance 14 Cob - 100 pF

(VCB = 10 Vde, IC = 0, f = 100 kHz)
Small-Signal Current Gain - hfe 25 -
(lC = 50 mAde, VCE = 10 Vdc, f = 1.0 kHz)
• Indicates JEDEC Registered Data. <D Pulse Test: Pulse Width 05: 300 /ls, Duty Cycle 05:2.0%.
® Figures 5 and 6 apply to 2N3740 and 2N3741 only.
FIGURE 2 - ACTIVE REGION SAFE OPERATING AREA
10
7.0 100 1"
5.0
0:: 1.0m
~ 3.0
§ 2.0
5.0m. The Safe Operating Area Curves indicate IC - VCE limits below
5
1.0
de " "['\ \
10ad lines for specific circuits must fall within the applicable Safe
~
::l
0.7
r= TJ 200°C
Area to avoid causing a catastrophic failure. To insure operation
below the -maximum T J, power-temperature derating must be ob-
8
.9
0.5
r== F SECONDARY BREAKOOWN LIMITATION
THERMAL LIMITATION .1,,1,I" 1_
served for both steady state and pulse power conditions.
0.3
~ rBASE·EMITTER DISSIPATION IS _ LIMIT FOR:
0.2
0.1
1.0
I--
I--
SIGNIFICANT ABOVE le~2.0AMP)
PULSE DUITY
2.0 3.0
C~CL;ll~%r
5.0 7.0 10
2i37
20
n
2N3740.A
30 50 70 100
VeE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
2-583
2N3740,A, 2N374~,A (continued)
;
LARGE SIGNAL C~ARACTERISTICS "OFF" REGION CHARACTERISTICS
FIGURE 3 - TRANSCONDUCTANCE FIGURE 5 - TRANSCONDUCTANCE
1000 ;
10
70o f= VCE= 1.0 V 5. o f= VCE BVCEO - 20
500
/ TJ = -55'C IT
:;; 300
'/ ~ 2.0
I
.s 200 ~ 1. 0
~
i TJ 17S'C
ia 100
/ I 1.:-
2d,c - t-- O. 5
g 70
== ;::::IOO'C ~ O. 2
100'C ./
~ 50 8 O. I
8 30 Ji 0.05
25'C ~ r==
Ji
20-- f--175'C : f-- I- REVERSE FORWARD
I 0.0 2
10 ,/ f I 0.0 I
o 0.2 0.4 :
0.6 0.8 1.0 1.2 0.2 0.1 0.1 0.2 0.3 0.4 0.5 0.6
V", BASE-Err"TTER VOLTAGE (VOLTS) V", BASE·EMITTER VOLTAGE (VOLTS)
,
FIGURE 4 - I "'PUT ADMITTANCE FIGURE 6 - EFFECTS OF BASE-EMITTER RESISTANCE

I
100 5.0
50
20
- VCE 1.0 V
~
2.0 f--
1.0
V~E ='40V
1/ --
i
: / /
~ 10 TJ -55'C
~ 5.0
-
0.5
TJ 175'C
~ I .... 25'C -
'" 2.0 ~ 0.2
i
~
1.0 100'C ~8 0.1
I
0.5 lOO'C
Ji 0.05
0.2 25'C
175'C 0.02
0.1
0.05 0.0 I 100
o 0.2 0.4 I 0.6 0.8 1.0 1.2 1.0k 10k lOOk
V", BASE'E~ITTER VOLTAGE (VOLTS) R", EXTERNAL BASE·EMITTER RESISTANCE (OHMSI
@ Figures 5 and Ii apply to ~N3740 and 2N3741.

i
1.0
0.7 0 0.5
!:;; 0.5 :
~w :
0.2
-I- ......
~~ O. 3 .-
~ til O. 2 '1l-
QU;
ww 0.05 ...1-1- DCURVES APPLY FOR POWER
~~
"''''
~~O.O5
E
O. I
'" '" 0.07
0.03
O. I
SINGLE PULSE HUL
1:!i7."-J
PULSE TRAIN SHOWN
READ TIME At t I
TJI.I)·- Te =P,.I) 8x:1fl

:
DUTY CYCLE, D= t,lt,
0.021-"'" i.:-' i
0.0 I I I I I I 11111 111m 11 I

0.01 0.02 0.03 0.05 ' 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
:
t, TIME 1mS)
FIGURE 8 - CURRENT GAIN

200
T~17JOC
.... t:--_ ~+100°C VCE 1.0 V
100
- --
+25°C
§'" 70
r-- ~
~
-- -
-55°e -.........:~
50
~ ~
'"
'-'
'-'
Q ~ ~~
1
30
I"-. ..... :::"'-
r-.... r-..: ~I::"
20
--:::::
10
10 20 30 50 100 200 300 500 1000
Ic, COLLECTOR CURRENT (mA)
SATURATION REGION CHARACTERISTICS

1. 0
I.S
~ 6
TJ ~ +25°C
§:
~ 1.4
§; 1. 2
Eli Ic ~ 100mA 250mA SOOmA 1000 mA
~
I :S
1.0
6 \
Ji8 0.4
\ \
0.2
\
I'..
\. \..
o
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I" BASE CURRENT 1m,\)

1.
° TJ·c +2Soe
II 11
+1.
o II -r
+ I,OOOC to + l75°C
...-.--
0. 8
V"I"" @Icll,·" 10
>- ::ttt::== -- I- ~ ..... 5-

r 1_--
eve for VCE(satj +2SoC to + 100°CL.--
55°e to +25°C
V,,@VCE 2.0V 0
@ 0. 6 To compu~e saturation voltages:
~ V. I"" @ operatiogTJ ~ LI,," @+25°C+ Bv_ (operating TJ -2S0C)
w 5 Us. appropriate Ov for voltage of interest. ,----
~ 0. 4 . Use appropriate curve for temperature range of interest.
'bf-'~- -
§:
I ISnt!+175
o. 2
0
O.oI 0.02 0.03
VCEh.'J @ Icll, ~ 10
I
0.05 0.07 0.1
-
0.2
~~
0.3 0.5 0.7 1.0

-2.0
o lOa 200 300 400 500 600 700 SOD 900 1000
Ic, COLLECTOR CURRENT lAMP) Ie, COLLECTOR CURRENT (mA)
2-585
FIGURE 12 - TURN-QN TIME FIGURE 13 - CAPACITANCE

3.0 300
~e~60V I I I I II
2.0 -- TJ ~ +25·C
- - - T , ~ +150·C
~ I~ 200
!'-..r-....,
1.0
~ ~I'I, r--
- Vee~24V
..:, Cob
"r--,
'1'0.'
0.7
I'
........
0.5
-......; ....
..... :::::1-- - 1--
0
.., ~e - 6OV. Vob - 2.0V
:&
~ 0.3 "-
I'\.
0.2
~ t.." 0
"\
" 'I'. C'b
O. I
0.0 7
0.05
-
"r--,
Vee ~ 24V. Vob~ 0
........
.......... ......
50 ~
"',"', ~
~
30
10 20 30 50 70 100 200 300 500 700 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
Ie. COLLECTOR CURRENT (mAl V.. REVERSE VOLTAGE IVOLTS)

10
7.0 .1 liT, ~ 125~cl

I
5.0
~,
--
n
.... - - - T,~+150·C '\ ,le/l.~20
---
T, "" +25·C
T, ~ +150·C
5.0 3.0
\,
4.0
3.0 _
I""" :::.
I--
-.... :::!. .
........ ....
2.0
~, \j,
~"
2.0
r- .... \,
\.
~ l? I':::t< blell. ~20
0
IcJ.l.~lb,L: ~ R~ ~~
0
"
le/l.~I~ ~'r, i"-
\
"
7
7 " "I' f'.
,
O.5
0.3
O.5 "
...., I" t-....r--
......
0.2 1"- r.... r.. ~~ -1-.1-.

O.3
f'r-.
0.1 O.2
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
2N3742 (SILICON)
CASE 31 NPN silicon annular transistor for high-voltage am-

(TO-5)
plifier applications from DC to VHF.
MAXIMUM RATINGS

Emitter-Base Voltage VEB 'T.O Vdc
Collector Current 50 mAdc

Ie

Derating F .t.ctor Above 25°C 28.6 mW/oC
Operating JWlction Temperature TJ +200 °c
Storage Temperature Range TlJtg -65 to+ 200 °c
JUNCTION CAPACITANCE GAIN·BANOWIDTH PRODUCT

70 50
50 ~ ~ ~
TJ ~ 25'C VeE 20V
I II 40 I--
30 "'t-- TJ ~ 25'C
-....
20 ...-:: I:;:: .........
b-
~
~
~
10 - k:::::== ~
~
VCE~ lOV\
\ 1\
~ C.b
5 5.0
.<5
3.0 \
2.0
i'-r--..
1
1.0 10
0.1 0.2 0.3 0.5 23510203050 lOll 1 5 7 10 20 30 50
REV£RSI: BIAS IVOLTSI I. EMlnER.cURRENT (mAl
2-587
2N3742 (continued)
ELECTRICAL CHARACiERISTICS (TA" 25°C unless otherwise noted)

Collector-Bde Breakdown Voltage BVCBO Vdc
(Ie " 100 I' Adc, IE "0) 300 -
Collector·Emttter Breakdown voltage· Vde
(Ie = 10 mAdc, IB '" 0)
BVCEO•
300 -
Emttter·Base Breakdown Voltage BVEBO Vdc
(IE = lOO/JAde, ~ '" 0) 7.0 -
Collector Saturation Voltage·* VCE(sat)** Vdc
(Ie = 10 mAde, IB = 1 mAde) - 1.0
(Ie " 30 mAde, IB " 3 mAdc) - 5~0
Base-Emitter Saturation Voltage" VBE(sat)·* Vdc

(Ie = 10 mAde, IB = 1 mAde) - 1.0
(Ie " 30 mAde, IB = 3 mAdc) - 1.2
DC Current Gain ••
(IC = 3 mAdc, V CE " 10 Vde)
hFE *.
10 - -
(Ie = 10 mAde, V CE " 10 Vde)
15
20
-
200
(Ie " 50 mAdc, VCE = 20 Vde) 20 -
Collector Cutoff CUrrent I'Ade
(VCB = 200 Vdc, IE " 0)
ICBO
- 0.2
(VCB = 200 Vdc, IE = 0, TA = lOOoC) - 20
Emitter Cutoff Current lEBO /.lAde

VEB = 6 Vde, Ie '" 0) - 0.2

(VCE " 20 Vde, IC '" 10 mAdc, f= 20MHz)
I~el 1.5 - -
(VCB = 10 Vde, IE " 0, f = 100 kHz) - 6.0
Input Capaeitahce Cib pF

(V.BE = 0.5 Vdc, Ie = 0, f " 100 kHz) "- 80

(IC " 10 mA, VeE" 10 V,l " 1 kHz)
h,e
20 200
-
Voltage Feedback Ratio h re XI0- 4
(Ie "lOmA, VCE" 10V,!: 1 kHz) - 1.0
Input Impedance hie Kohlll8

(Ie " 10 mA, VeE" 10 V, f '" 1 kHz) - 1.0
Output Admittance hoe limbOS

(Ie = 10 mA, VCE = 10 V, f = 1 kHz) 5.0 50
Real Part of Input Impedance

(Ie '" 10 mA, VCE = 10 V, f " 5 MHz)
Re(hie) - 40 ohms
*PW:: 30 I'S, Duty Cycle ~ 1%

**PW ~ 300 /Ls, Duty Cycle ~ 2%
2-588
2N3742 (continued)
CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE

70 ----
60 I
.......
~ r-
50 l- f- f-I-- r..... Ve.- IOV
40
""'- ~r--
~
L--- r--
~~ I-- f -
j--
G
TJ - -55'C j-- l- t-
f-i-- - ,
,:
IS
12
10
I
- l--- !-----"
...... 1--:"": f -
10 20
!
30 50
Ie. COLLECTOR CURRENT ImAde}
CURRENT GAIN CHARACTERISTICS versus COLLECTOR·EMITTER VOLT;AGE

70 r - - - - - r-- :
60 , TJ ~ 25'C
50 Ve. J 10V -
- --
""-t--
---r--....
40
I"'"' T- ~E 5V
I--- r--- ~: ""'-

i~
~-2V
IS
12 I\.
10 ~
I 10 20 30 50
Ie. COllECTOR CURRENT (mAde)
COLLECTOR·EMITTER SATURATION VOLTAGE BASE ·EMITTER SATURATION VOLTAGE

0.80
is
r--- I-- lell, ~ 10 1 §
~ 0.76 f---Ie/I, - 10
I L i
r--- I-- TJ -25'C I TJ -25'C V

~
IL
I i 0.72
'V
./
,/
;;;
L ~ 0.68
V
V
;.. 0.64
~
... V
./ .! V
.; ,
0.60
10 20 30 50 5 7 10 20 30 50
2-589
2N3742 (continued)
SMALL SIGNAL Y PARAMETERS

T. = 25°C
INPUT ADMITTANCE REVERSE TRANSFER ADMITTANCE

50 200
100 Im~,.I
30
VeE-IOVdc 50
20 5MBz 1
_L
I.5
10
Imlt-.I
....... i-"" IIi! : Re.(y~1
5~H'
g
Ii I--'"
I
5
l
i-'
./ I .....
i 0.5
t---- VeE 10Vdc
~ Re(y,.) / ' ... 0.2

./
I"
..! 0.1
0.5
v 0.05
Re(Y~1
1kHz
0.3 0.02 Im,YNI
l/V .01
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10.0 0.1 0.2 0.5 1.0 2.0 5.0 10
I. EMInER CURRE/fT (mAdel IE. EMITTER CURRE/fT (mAdcl
FORWARD TRANSFER ADMITTANCE OUTPUT ADMITTANCE

300 500
200
III
Imly••)
I I 200
5 MHz
VeE -IOVdc Vi-' 100
/1'\
VeE-IOVde
,kH. V 5 MBZ j V
\V
Rtly.,J~V
V V 5M~ "
/ 2 /I V
l·kHz
Imly,.1
I );(Y:J"..... ./
O.5 .".. V
~ .....V"
V ~. 2r-'""
f-"'"
2 O. I -~
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IE. EMITTER CURRENT (mAde) I. EMITTER CURRENT (mAde)

2N3743 (SILICON)
PNP silicon annular transistor for high-voltage am-

plifier applications from de to VHF.
CASE 79
(TO-39)
Collector connected to ca.e
MAXIMUM RATINGS

Total Device Dissipation @ T A = 25°C PD

1.0 watt
Derate Above 250C 5.7 mW/oC
Total Device Dissipation@ T C = 25°C PD 5.0 watts

Derate Above 25°C 28.6 mW/oC
JUNCTION CAPACITANCE GAIN·BANDWIDTH PRODUCT

70
~
3GO
2GO
100
t-
......
II
I~I
I
TJ -25"C
I I
T" - 25"C
/'
/"" .... \.
\
I
-
Vca - 20V
i"'-
I 70 ~~ VeE-IOV
I 50
~ \
30
20 - "'1'-... ~
Iff \
-n-
10
L/
10 7
IV 1\
G.I 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I 5 7 10 20 30 50
R£'IERSE BIAS MIlTS) I. EMITTER CURRENT InIAl
2-591
2N3743 (continued)

(Ie = 100 "Ade, IE = 0) 300 -
Collector-Emitter Breakdown Voltage· BVCEO· Vde
ac ; 10 mAde, IB ; 0) 300 -
(IE ; 100 "Ade, Ie ; 0) 5.0 -
Collector Saturation Voltage·· VCE(sat)·· Vdc
(Ie ; 10 mAde, IB ; 1 mAde) - 5.0
(1(' ; 30 mAde, IB ; 3'mAde) - 8.0
Base-Emitter Saturation Voltage.· VBE(sat)·· Vde

(Ie = 10 mAdc, IB '" 1 mAde) - 1.0
(Ie = 30 mAde, IB = 3 mAde) - 1.2
DC FOrward Current. Gain··

ac -
= 100 "Ade, VCE = 10 Vde) h FE •• 20 -
(Ic = 1 mAde, VCE = 10 Vde) 25 -
(Ie = 10 mAde, VCE = 10 Vde) 25 -
(Ie = 30 mAde, VCE = 10 Vdc) 25 250
(Ie = 50 mAde, VCE = 20 Vde) 25 -
Collector Cutoff Current IeBO "Ade
(VCB = 200 Vdc, IE ; 0) - 0.3
(VCB ~ 200 Vdc; IE = 0, T A = l00OC) - 30
Emitter-Base Leakage Current lEBO "Ade

(V ES '" 3 Vde, Ie ; 0) - 0.1

(Ie '" 10 mAde, VCE ; 20 Vdc, f';20MHz)
Ilite I 1.5 -
-
(VCB z 20 Vdc, IE ; 0, f = 100 kHz) - 15

(VEB = 1 Vdc, Ie '" 0, f = 100 kHz) - 400
Small Signal Current Gain bre -

(VCE = 10V,Ie; 10mA,f '" 1 kHz) 30 300
Voltage Feedback Ratio hre

(VCE = 10 V, Ie = 10 mA, f = 1 kHz) - 4.0
Xl0- 4
Input Impedance hie kohms

(VCE = 10 V, Ie = 10 mA, f = 1 kHz) - 1.0
Output Admittance
(VCE = 10 v. Ie '" 10 mA, f = 1 kHz)
hoe
- 200
"mhos
Real Part of Input Impedance

(Ie = 10 mAdC, VCE = 10 Vde, f : 5 MHz)
Re(~e)
- 40
ohms
.PW::: 30 "s, Duty Cycle':: 1%

**PW ~ 300 "s, Duty Cycle':: 2%
2-592
2N3743 (continued)
CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE

100
VeE ~110V
TJ 125°C
70
--
I ..........
z
50 TJ ~5°C b...
~ "\
! 30
g
~
20
-
TJ 55°C
'""-
- -......
~
10
~
1 1.2 1.5 10 12 15 20 30 50
CURRENT GAIN CHARACTERISTICS versus COLLECTOR·EMITTER VOLTAGE

70 ..
TJ ~ 25°C _
i!!i
<3
50
:--.... VeE lOY ---I--,.

ffi ~YeE~5Y
lE 30
ag '\
1 20 i\
\
10
1 1.2 1.5 10 12 15 20
\ 30 50
COLLECTOR·EMITTER SATURATION VOLTAGE BASE·EMITTER SATURATION VOLTAGE

7.0
!3 I L
~ lell, ~ 10
~ 0.72
I~II' ~ 10
~ 6.0 ~
Ii!
~
TJ ~ 25°C / ~
1
./
§<
5.0 V ~ TJ ~ 25°C V
z:
9 J §<
z 0.68 /'"
V
~
9
4.0 / 1ii ./
~
e;
L ~
./ 0.64
~
gis
t;
3.0
2.0
/'
i'"~
,/
V
V
./
~
~
0.60
, 1.0 ~ ].
;:
V
$
0.56
10 20 30 50 1 10 20 30 50
2-593
2N3743 (continued)
SMALL SIGNAL Y PARAMETERS
INPUT ADMmANCE REVERSE TRANSFER ADMITTANCE

50 1000
500 Imly..)
20 I~IY~ f-
200 l
5 MHz
Ig
10
7.0
514Hz ~
1
~
100
50 .I
-'
Rely..)
:i!
5.0 RelYi~ !:: 20
fi! i!l
E ..... 1--'
:; 10
I 2.0
~ ~ 5.0
~
!!;
,..,
.f
1.0
0.7
10-
Relyio)
1./
! 2.0
1.0
VeE = 10Vd,
0.5 ~ 0.5
V 1kHz
r- V~ = lOrd. I
0.2
0.2 I-- - I kHz Re Iy,.)
0.1 r-- -
1m I!},.) l
0.1 I/r .05
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
I.. EMmER CURRENT·llIIAI IE. EMmER CURRENT (mA)
FORWARD TRANSFER ADMmANCE OUTPUT ADMITTANCE

1000 1000
1 J...j..
500 5 MHz t- Im!},.)
500
200
Rely,,!
\kHy "... I 100
~
50
VeE = 10Vd.
- VeE I V 5 MHz
/' )' I 20
,/ ~ 10
i5
V
~,; ..!
1/ / ImlylJ 5 MHz
Rely.,) ........... ,;'
...... V 1kHz
,..- f-"'"
/.
,.... 1-1-'
2
0.1
'"..... i"
0.2 D.5 1.0 2.0 5.0 10
0.5
0.1 0.2 D.5 1.0 2.0 5.0 10
I.. EMmER CURRENT ImA) I.. EMmER CURRBIT· (mAl
2-594
2N3 762 (SILICON)
2N3763
2N3763 JAN, JTX AVAI LABLE
2N3764
2N3765
Medium- current PNP silicon annular transistor, de-

signed for high-speed switching and driver applications.
CASE 31 CASE 26
(TO-S) (TO-46)
2N3762 2N3764
2N3763 2N3765
MAXIMUM RATINGS (TA=25 0 Cunlessotherwisenoted)
Rating Symbol 2N3762 2N3763

2N3765
Unit
2N3764
TO-5 TO-46
2N3762 2N3764
2N3763 2N3765
Total Device Dissipation @ T A = 25°C PD 1.0 0.5 watt

Total Device Dissipation @ TC = 25°C PD 4.0 2.0 watts

Thermal Resistance °C/mW

Junction to Ambient (JJA 0.175 0.35
Junction to Case (JJC 0.044 0.088
2-595
2N3762, 2N3763, 2N3764, 2N3765 (continued)
ELECTRICAL CHARACTERISTICS (TA; 25°C unless otherwise noted)

Characteristic I Symbol IMinlMaxl Unit I
OFF CHARACTERISTICS
Collector-Sase Sreakdown Voltage SVCSO Vde
(Ie = 10 pAde, IE = 0) 2N3762, 2N3764
2N3763, 2N3765
40
60
--
Collector-Emitter Sreakdown Voltage 111 SVCEO Vdc
(Ie = 10 mAdc, IS = 0) 2N3762,2N3764 40 -
2N3763,2N3765 60 -
Emitter-Sase Sreakdown Voltage SVESO vcrc
(IE = 10 p Ade, ·Ie = 0) 5.0
-
Collector Cutoff Current IeEX J,LAdc
(VCE = 20 Vdc, VES =
(VCE = 20 Vdc, VES =
2 Vdc)
2 Vde, TA = 100OC)
2N3762,2N3764 -- 0.10
10
--
(VCE = 30 Vdc, VES = 2 Vde) 2N3763, 2N3765 0.10
(VCE = 30 Vde, VES; 2 Vde, TA = lOOOC) 10
Sase Cutoff Current ISL J,LAde

(VCE = 20 Vde, VES
(VCE = 30 Vde, VES
= 2 Vde)
= 2 Vdc)
2N3762,2N3764
2N3763,2N3765
-- 0.2
0.2
ON CHARACTERISTICS
-- -
DC Current Gain 111 hYE
(Ie = 10 mAdc, VCE = 1 Vde) 35
(Ie = 150 mAde, VCE ~ 1 Vdc) 40
(Ie = 500 mAdc, VCE = 1 Vde)
(Ie = 1 Adc, VCE = 1.5 Vde) 2N3762,2N3764
35
30
-
120
2N3763, 2N3765 20 80
(Ie = 1.5 Ade, VCE = 5 Vde) 2N3762, 2N3764
2N3763, 2N3765
30
20
--
Collector Saturation Voltage" 1 VCE(sat) Vdc
(Ie = 10 mAde, IS =1 mAdc) - 0.1
(Ie = 500 mAdc, IS = 50 mAde)
-- 0.22
0.5
(Ie = 1 Adc, IS = 100 mAdc) - 0.9
Sase-Emitter Saturation Voltage 111 VSE(sat) Vdc

(Ie = 10 mAdc, IS = 1 mAde) - 0.8
--
(Ic = 150 mAde, IS = 15 mAdc) 1.0
(IC = 500 mAdc, IS = 50 mAde) 1.2
(IC = 1 Adc, IS = 100 mAde) 0.9 1.4
(VCS = 10 Vdc, IE = 0, f = 100 kHz) - 15
(VBg= 0.5 Vde, Ie = 0, f = 100 kHz) - 80
High Frequency Current Gain I hte I -

--
(IC =50 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N3762, 2N3764 1.8
2N3763, 2N3765 1.5
Delay Time
(VCC =30V, VSE(Off) =2 V,
~ - 8.0 ns
Rise Time Ie = 1 Amp, IB1 = 100 rnA) tr - 35 ns
Storage Time
(VCC = 30 V, ~ = 1 Amp,
ts - 80 ns
Fall Time
IB1 = -IS2 = 1 0 mA)
tr - 35 ns

(Ie = 1 Amp, IB = 100 mA, Vce = 30 V) - 30
111 Pulse Test: PW :;; 300 J,LS" Duty Cycle:;; 2%
2-596
2N3762, 2N3763, 2N3764, 2N3765 (continued)
"ON" CONDITION CHARACTERISTICS
DC CURRENT GAIN
300
I I I
.- II - Ve,=IV
200
- --
.- .- ::-:::=: ::- .... -.- .-
TJ = 175'C ~-
1'""--
- -.. - - Ve, = 10V
t---
- - '-'-
150
- -...;;,:
z 1--
~ E;:
.-
"~.
$
-
TJ=I~~_
-
~- J.- r-
- - .-
f-. t--
El 100 1-- '- I- ~ ~
~
- - --
I--
- ".....
i 70 ~-
50
~-
--- ~
r--
-
I-' -", I-
TJ = 25'C
~- ~
r--
- I--
..........
....... 1"-
~
~ l-
~- ~
30 1-;:::'" :::.:::r.::-
,....-
I-- i-
ry-r
1.0 2.0 5.0 10 20 50 100 200 500 1000
I~, COLLECTOR CURRENT (mAl
1.0
I
in TJ = 25'C
::. 0.8 This graph shows the effect of base current on collector current. {3o (cur·
~
~ 1\ I rent gain at the edge of saturation) is the current gain of the transistor at 1
volt, and {3F (forced gain) is the ratio of lellBF in a circuit. EXAMPLE: For type
'"~
g 0.6 1 " r--.. . le-~A 2N3734, estimate a base current (lB~ to ensure saturation at a temperature of
25'C and a collector of 500 rnA. .
~ 1\ I ObseNe that at Ie = 500 mA an overdrive factor of at least 2.0 is required

to drive the transistor well into the saturation region. From Figure 1, it is seen
~ 0.4 \'" I'-.. 500,J that hFE @ 1 volt is typically 54 (guaranteed limits from the Table of Char-
acteristics can be used for "worst-case" design).
\\
!
<.>
0.2 t-..:::: t----
j
150 rnA
2= _ _54_
:2'"
IBF - 18.5 rnA typ
500mAIIBF
10j
fJol fJF, OVERDRIVE FACTOR
"ON" VOLTAGES TEMPERATURE COEFFICIENTS

U +1.5
I II I L I I
1.0 r- r- TJ = 25'C
I I I I I
V"IN'I, lell, - 10
+1.0
I I I loo'C~ ~
-
25'C TO loo'C
- r V
-r1r.-r-
--
+0.5 five fOR VCEI"'I
!S o.a .....
I-- --TI I I
fi3 55'C TO 25'C
~ V,,@Vco=IV
j
~ 1~5'C
0.6
~ -0.5
~
!ii! lOO'C TO -
ir:
? 0.4 t§ 25'C TO loo'C J. ~
8 -1.0 - lJv,fORV"
0.2
~ -1.5
..& r-::::.- r- " -55'CTO 25'C
Ii.!
10 20 30 50 100 200
Iclll-IO
I I I I
300 500 1000
-2.0 t:
o
~
100 200 300 400 500 600 700 800

I 900 1000
Ie. COUECTOR CURRENT (mAl Ie. COLLECTOR CURRENT !mAl
lJ TURft.IIN DME SWITCHING TIME EQUIVALENT TEST CIRCUITS TUU-OFF DME

-30V
10 < I, < 5OOl£S
o ---
2V
+
,,>
I, < IOns
II£S
OUTY CYCLE ,,; 2%
SCOPE SCOPE
lOOIl 1,1- lOOIl

-U.lV I
I
PW=200ns IN916
RISE TIME"; 2 ns
DUTY"CYCLE"; 2% HV ':"
2-597
2N3762, 2N3763, 2N3764, 2N3765 (continued)
LARGE SIGNAL CHARACTERISTICS "OFF" CONDITION CHARACTERISTICS
1000 102
700 I--- I- VeE 10V

~ VeE-30V
500 I / / I
400 / I I I
I 102
TJ ~ 175°C / V
300
200 I 100°C
l ~
!5
I I I !5 10
i,...-'
/ /
ill
B I I I ~
100
I
.P
70
50 r--'-- TJ ~ 175°
I
.p 1.0
J
25°C -
40 100°C
-
, 25°C
30 55°C
I 4- REVERSE FORWARD
10-1
20 I
I
10
0.2 0.4
I 0.6
I
0.8 1.0 1.2
10-2
0.2 0.1 0.1 02
./
0.3 0.4 0.5

VIE, BASE.fMITTER VOLTAGE !VOLTSI VIE, BASE.fMITTER VIIlTAGE!VOlTS)
INPUT ADMITTANCE EFFECT OF BASE·EMITTER RESISTANCE

10 10'
5.0 I--- - VeE~ 10V

/ TJ~
3.0 I I ~eE.~30V
102
2.0 / II
V
1.0 I / I
l 0.5
~B
0.3
0.2 I
i~
- TJ ~ 175°C I I I
0.1
ftoo-cf
WC
I ~.
-1- 550C
0.05
0.03 I II 10- 1
0.02
I I i,~
0.01 I .I I 10-2
0.2 0.4 0.6 0.8 1.0 1.2 101 10< 10' 106 107 100
VIE. BASE-EMITTER VOLTAGE IVOLTSI RIE, EXTERNAl. BASE·EMITTER RESISTANCE lohms)
2-598
2N3762, 2N3763, 2N3764, 2N3765 (continued)
- TJ =25·C SWITCHING CHARACTERISTICS --TJ =150·C
TURN·ON TIME RISE AND FALL TIME

300 300
"\. I ~"-
200
"\.'\ Vee ~ 30V
200
Icll,~ 10 '\-.;;: Ie/I, ~ 10
~
100 I~ :\. '\ 100 ~~

".
,,~
'\.
I\.'~
'\. ~'\.
~ t, If
30
20 I - - f-- Id "
'\.
'\.
~ Vcc~
"':---.." .-- Vcc~

I'...:.
30V
10V
30
20
~~
" .....1'..
.... -
i"-.. t,
V.. ~O ..... fr'~
:'\- I
10
I-- r-V.b~2V
1 1
'\.
~ 10
rr Ilfl
10 50 100 200 500 1000 10 20 30 50 100 200 300 500 1000
Ie. COLLECTOR CURRENT (mA) Ie- COLLECTOR CURRENT (mAl
STORAGE TIME FALL TIME

300 300
II,,~I_I':+ ~', I
200
r--
f-
r--
- r--.. ....., r.~~-'htf
200
'\ h,
I'\.1',
I
181 = -I B2
I I
100
.'1
\ Icll, ~20 '- -
Icll, -10
""-.
-~ t-....
~
100
~ r, "- l', Ie/I, ~ 20
Vee ~ lOV
!
~
"-
-~
, "- "", .......
~
r'\.
~
50
" r- -
t?
:oJ 30
t\
'\
30
Icll,~ 10 i' ""
......... p:-- :....,
r---. -
20
10
20
10
t'--..
. . . r--..
-
10 20 30 50 100 200 300 500 1000 10 20 30 50 100 200 300 500 1000
Ie. COLLECTOR CURRENT (mA) Ie. COLLECTOR CURRENT (mA)
2-599
2N3762, 2N3763, 2N3764, 2N3765 (continued)
CHARGE DATA CAPACITANCE

20 100
I IIIII I
10
==
-
-
f::-TJ~+25'C
I I Vce -30VI
lell, ~ 10
~ --_. TJ~+150'C ..-

.-
/
~
70
50
- I--
............ Cibo
II UI 1
IT;~1~25,L l -
/ ~
/' 30
~.
Y -r-.
....... QT §.
"
~
20
G .- lE
~
........
". lL"" ~ .....
<3 r- Cobo
"V .IV 10
r-.....
r.....
O}
/
/ / 7.0
0.5 QA
./
5.0
0.3
0.2 3.0
10 20 30 50 100 200 300 500 1000 0.1 0.2 0,5 1.0 2.0 5.0 10 20 50
Ie, COLLECTOR CURRENT, (mA) REVERSE BIAS (VOLTS)
ACTIVE REGION SAFE OPERATING AREAS

3,0
2,0 f\ \ \. "--..........
\ \... \...
1.0 \ ~
'" .............. 50 fl.,ec
,.~
5
0.5
"
'" '-......
........
...........
~sec
'" ......... 100 fl.sec
..............
--.........
........
'" .......
- '"r--..... -r---
--- --r--
0.3
.......
15 ~
~ 0.2
............. ....... DC
"-. I---.....
.............. ...............
! 0.1
...............
r-.. r---
--
..Y
.05 == The Safe Operating Area Curves indicate Ie VeE limits

below which the devices will not go into secondary break·
- down. Asthe safe operating areas shown are independent of
r----
,03 _
.02 _
temperature and duty cycle, these curves can lJe used as long
as the thermal resistance (max rating table) is also taken into
consideration to insure operation below the maximum 2N3762 2N3764
-
junction temperature. I I 2N3763 2N3765 -
.01
r-- I I I I I
10 20 30 40 50 60
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
2-600
2N3766 (SILICON)
2N3767
Medium -power NPN silicon transistors, for use in

switching, and medium-power-Qmplifier applications. Com-
plement to PNP 2N3740 (2N3766) 2N3741 (2N3767).
CASE 80
(TO-66)
Collector con nected to case
MAXIMUM RATINGS (Te= 25"C unless otherwise noted)

Collector- Base Voltage VCB 80 100 Vdc
Emitter-Base Voltage V EB 6.0 6.0 Vdc
Peak 4.0
Total Device Dis sipation @ T C = 25° C PD 20 Watts

Derate above 25° C 0.133 W/"C
Thermal Resistance eJC 7.5 °C/W
Operating and Storage Junction T J' T stg -65 to °175 °C
Temperature Range
20 ...............
en ............
~
<: 16
~ ...............
z: ........
0 ['.....
~ 12
0...
en ~
en
C 8 ~
.....
<>::: ..............
~
0
0...
IS
4 -......... .....
0... r-......
0 ~
o 25 50 75 100 125 150 175
Te. CASE TEMPERATURE (Oel
Safe area curves are indicated. Both limits are applicable and must be observed.
2-601
Characteristic Symbol IMin I Max Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage 111 BVCEO Vdc
--
(IC: 100 mAdc, IB : 0) 2N3766 60
2N3767 80
(V EB = 6 Vdc) - 0.75
(VCE: 80 Vdc, VBE: 1.5 Vdc) 2N3766 - 0.1
(V CE = 100 Vdc, VBE : 1.5 Vdc) 2N3767 - 0.1
(VCE = 50 Vdc, VBE : 1.5 Vdc, TC : 150°C) 2N3766 - 1.0
(VCE: 70 Vdc, V BE : 1.5 Vdc, TC : 150°C) 2N3767 - 1.0
Collector-Emitter Cutoff Current ICEO mAdc
(VCE: 60 Vdc, IB : 0) 2N3766 - 0.7
(VCE: 80 Vdc, IB: 0) 2N3767 - 0.7
Collector-Base Cutoff Current mAdc
leBO
(VCB: 80 Vdc, IE: 0) 2N3766 - 0.1
(V CB : 100 Vdc, IE: 0) 2N3767 - 0.1
ON CHARACTERISTICS
(IC : 50 mAdc, V CE : 5 Vdc) 30 -
(IC : 500 mAdc, VCE : 5 Vdc) 40 160
(IC : 1.0 Adc, V CE : 10 Vdc) 20 -
Collector-Emitter S4turation Voltage VCE(sat) Vdc
(IC : 1 Adc, IB : 0.1 Adc) - 2.5
(IC : 500 mAdc, IB : 50 mAdc) - 1.0
(IC : 1.0 Adc, VCE : 10 Vdc) - 1.5
(IC : 500 mAdc, VCE : 10 Vdc, f : 10 MHz) 10 -
Common-Base Output Capacitance Cob pF
(VCE: 10 Vdc, Ie : OAdc,f: 100 kHz) - 50
Small-Signal Current Gain hre -
(Ie : 100.mAdc, VCE = 10 Vdc, f = 1 kHz) 40 -
111 Pulse Test:Pulse Width~300ILs,Duty Cycle~2.0%
4.0 ACTIVE REGION SAFE AREAS
r\. ...... "1.." ........
1 SOJLS
2N3 7;;-'
"- ~
500 JLS
2.0
"" .....
AND
2N3767
..........
I
" '"""-
t-...
i'...
1m, '>-
N-
2N3767 ==
Ic·Ye< limits below which the device will not
go into secondary breakdown. Collector
causing a collector·emitter short. (Case
5m' ONlY _
1"""0. ::.... temperature and duty cycle of the excur·
)0.., .....,., sions make no significant change in these
safe areas.) The load lin.e may exceed the
DC
i""- --- BYaovoltage limit only if the collector cur·
i'- rent has been reduced to 20 rnA or less be-
fore or at the BYc" limit; then and only then
0.1
'" .........
may the load line be extended to the abso·
lute maximum voltage rating of BYCIO. To
insure operation below the maximum TJ •
the power-temperature derating curve must
be observed for both steady state and pulse
0.06 power conditions.
0.04
10 20 30 40 50 60 70 80
VeE. COLLECTOR EMInER VOLTAGE IVOLTSI
2-602
LARGE SIGNAL CHARACTERISTICS CUT-OFF CHARACTERISTICS
1000 10
I I
700 I _l I
- VCE~5V
/ / I - - VCE~40V
SOO
If
I I
I
/ I
/
300 I I 1.0
200
TJ ~ +JWC -'r/ I I - TJ ~ +J75'C
./
IL
I
1 I I I '"
.§
/
ffi
~
~
100
TJLI~'C
-- ;
~
0.10
II
f-- ~ TJ
~
III +JOO'C /
~
.9
70
TJ I +2~'C ~
.9
so
~I---
30 0.01
- tJzsol
TJ = -55'C -
20
I--- REVERSE BIAS FORWARD BIAS --<
J
V
10 0.001
./
0.2 0.4 0.6 0.8 1.0 1.2 0.6 0.4 0.2 0.2 0.4 0.6
VIE, BASE-EMITTER VOLTAGE (VOLTS) VIE, BASE.fMITIER VOlTAGElVOlTS)
INPUT ADMITTANCE EFFECT OF BASE·EMITTER RESISTANCE

30 10
1/ ~ .-
20 VeE = 40V
I I
/ / l/ /
f-'- VCE~5V
II II V
10
TJ ~ +175lC I
7.0 1.0
5.0 II
TJ ~ +175'C I ./
I I ....... i 1 V
1 3.0
ffi
!!l'-' 2.0 I / ffi
~ J
r- I-- TJ ~ +loo'C I I I 0.10 TJ ~ +loo'C
~
~ 1.0
0.7
I I -- rf.. V I
I
.9
I-- TJ ~ +25'C 1-
0.5 r- ....... I TJ ~ -55'C 0.01
0.3 I t-I
0.2 I
I TJ ~ +25'C
0.1 I II I 0.001
II I I II i-'"
0.2 0.4 0.6 0.8 1.0 1.2 1()2 10' 1()4 lOS 1()6
V... BASE-EMIITER VOLTAGE (VOLTS) ROE, BASE-EMITIER RESISTANCE (OHMS)
2-603
CURRENT GAIN
300 I I I I
--VCE=SV f-
200
-
TJ = +17S"C
TJ = +100"C
- - --- 1-. .• t---
~ ..
-""":.. t-"; ~=--
VCE-2V
f-
-
z 100
i TJ=+25"C
t5
~
i
50
'55"C
, ~
"
TJ
~
", ",
30
20
10
~
\
,
10 20 30 50 70 100 200 300 500 700 1000
Ic. COLLECTOR CURRENT !mAl
2.0
'"
~
~
'.
Ie = lOOnIA Ie = 500nIA
.""" Ic=lA
~
I,S ......
;:!:
~
85
!:
; 1,0
" ......
..... +25OC
-
TJ
~.
>
U·
O.S .......
0,5 0.7 1.0 2,0 3,0 S.O 7,0 10 20 30 50 70 100

I,. BASE CURRENT (IlIA)
"ON" VOLTAGES TEMPERATURE CO-EFFICIENTS
1.2 I I I I 8,0
- TJ - +2S"C
T. COI1fIIIe saluralion voltages
~"'I @operatlncTJ=V,I"'1
I I II
1.0 6,0 +25DC+ ""Ioperating TJ -' 2S"C1 I I
U", appropriate ", for voltage of interest, ! ,I I,
lL
-
Uj"anrij Te Idr ~m~,,,a:ure{a,e ~ i i i
~
;
0.8 ~ r- VIE''''I @Ic/l,= 10
I I
P
:i
4.0 TJ = +25!CID +17S C I.J..-
D
i""n.+"
'""" '"
0.6 V.. @V",,=2V i 2,0 9vc 1", VCll"'l
~ II I I
..
TJ= 55OCID+25OC
!i
. 0.4 II
VCEI"'I@Ic/I,=:10 ~
I - "'-1 I
~ ""I... V"
TJ = +25"C ID +17S"C
l-
r-
0,2
'.t I I I I t..I -o.z .... TJ = .,..55"C ID +25"C I-
,II .J,!o' r" I I I I I I
-4,0 I I
10 20 30 50 100 200 300 500 1000 100 200 300 400 500 600 700 800 900 1000
Ie. COlI.£CTOR CURRENT ImA) Ie. COLLECTOR CURRENT ImA)
2-604
(TJ = 25°C)
TURN·ON TIME TURN·OFF TIME
5000 I I I I
1000
,,'-, lell, = 10
3000 I" I"
~~ -Vee ~ 30V, VOl' ~ OV
500
1:\ 2000
~ ..........
-- Vee = 80 V, VOl = 2 V
300
I'\.
:\
I'~
I,
TYPE 2N3767
"
I.
I
~
1\
"
1',=1,- Mot,
200
~ 1000
\ \. ,
Id , .s
..
~
w
>=
100
..... r ....
w
~
500 I'\.
Vee ~ 80 ViTYPE 2N3767 ONLY)
"-
". 300
I' 1\ III
I" I' III
50
]\ II, •
200
r, Vee = 30V
I(l
30 "
r-- l"-
20 "' K.
"'~
100
I'-. ~"
10
10 20 30 50 100 200 300
"...
500 1000
50
10 20 30 50 100 200 300 500 1000
Ie, COLLECTOR CURRENT (mAl Ie, COLLECTOR CURRENT (mAl
CAPACITANCE EQUIVALENT CIRCUIT FOR

MEASURING DELAY AND RISE TIME
300 P.W.>2t,
RISE TIME"; 0.1 t" Vee
DUTY CYCLE - 2%
200
1'-"
C'b APPROX.J111V,.
t--f', V,. _____ --0
..... I- 1'1'1 VOl
'VOI = BASE-EMmER "OfF" BIAS VOLTAGE
....
EQUIVALENT CIRCUIT FOR
MEASURING STORAGE AND FALL TIMES
70
"'" APPROX
+l1V
~ c...
50
V,.
1\
APPROX,
-9V
30
0,10,2 0.5 1.0 2,0 5.0 10 20 50 100 100 < 1,.< 500 piS
I, < IS ..
REVERSE BIAS (VOLTSl DUTY CYCLE - 2%
2-605
2N3771 (SILICON)
2N3772
MJ3771
M.J3772
HIGH-POWER NPN SILICON TRANSISTORS 20 AND 30 AMPERE

POWER TRANSISTORS
· . . designed for use in power amplifier and switching circuits NPN SILICON
applications.
40-60 VOLTS
150 WATTS
• High DC Current Gain -
hFE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771
15 (Min) @ IC = 10 Adc - 2N3772. MJ3772

VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc - MJ3771
1.0 Vdc (Max) @ IC = 10 Adc - MJ3772
*MAXIMUM RATINGS
2N3771 2N3772
Rating Symbol Unit
MJ3771 MJ3772
Coliector~Emitter Voltage VeEO 40 60 Vdc

Collector-Emitter Voltage 50 80 Vdc
ra~
VeEX
Collector-Base Voltage Ves 50 100 Vdc
Emitter-Base Voltage VES 5.0 7.0 Vdc
1111'550MA~
Collector Current ~ Continuous Ie 30 20 Adc
Peak 30 30
Base Current - Continuous IS 7.5 5.0 Adc
t
0.83
~~tl ~t~
Total Device Dissipation@TC=250C PD 150 Watts
Derate above 2SoC 0.86 w/oe 0.135
MAX 1 _

Temperature Range
TJ.Tstg -65 to +200 °e
L-r=:::=~~=::::::=J
*THERMAL CHARACTERISTICS II:::!""1 - J:;\II

-!Jl1 "-----j
1.197 nr:1;1; I
0.44
if.4fI
Characteristic 0.151 DIA 0.655
0.161 I 0.675 EMITTER
9.:.~ I'
0.225
-Indicates JEDEC Registered Data (2N3771, 2N3772).
BASE
CASE 11
TO~3
2-606
2N3771, 2N3772, MJ3771, MJ3772 (continued)
ELECTRICAL CHARACTERISTICS (TC; 25°C unless otherwise noted)

OFF CHARACTERISTICS
'Coliector·Emitter Sustaining Voltage (Note 1) VCEO(sus) Vde
(lC = 200 mAde, IB = 0) 2N3771, MJ3771 40 - -
2N3772, MJ3772 60 - -
'Collector Cutoff Current ICEO mAde
(VCE = 30 Vde, IB = 0) 2N3771, MJ3771 - - 10
(VCE = 50 Vde,IB = 0) 2N3772, MJ3772 - - 10
'Collector Cutoff Current ICEX mAde
(VCE = Rated VCB, VEB(off) = 1-5 Vde) 2N3771, MJ3771 - - 2.0
2N3772, MJ3772 - - 5.0
(VCE = 30 Vde, VEB(off) = 1.5Vde, TC= 1500 C) All Types - - 10
'(VCB = Rated VCB, IE = 0) 2N3771, MJ3771 - - 2.0
2N3772, MJ3772 - - 5.0
(VCB = 30 Vde, IE = 0, TC = 1500C) All Types - - 10
'E mitter Cutoff Current lEBO mAde
(VBE = Rated VBE, IC = 0) - - 5.0
ON CHARACTERISTICS
'DC Current Gain (Note 1) hFE -
(lC = 15 Ade, VCE = 4.0 Vde) 2N3771, MJ3771 15 - 60
(lC = 10 Ade, VCE = 4.0 Vde) 2N3772, MJ3772 15 - 60
(lC = 30 Ade, VCE = 4.0 Vde) 2N3771, MJ3771 5.0 - -
(lC = 20 Ade, VCE = 4.0 Vde) 2N3772, MJ3772 5.0 - -
'Coliector·Emitter Saturation Voltage (Note 1) VCE(setl Vde
(lC = 15 Ade,IB = 1-5 Ade) 2N3771 - - 2.0
MJ3771 - - 1.0
(lC = 10 Ade,IB = 1.0 Ade) 2N3772 .,.. - 1.4
MJ3772 - - 1.0
(lC = 30 Ade, IB = 6.0 Ade) 2N3771 , MJ3771 - - 4.0
(lC = 20 Ade, IB = 4.0 Ade) 2N3772, MJ3772 - - 4.0
Base·Emitter Saturation Voltage (Note 1) VBE(set) Vde
(lC = 10 Ade,IB = 1.0 Ade) MJ3771 , MJ3772 - - 1.7
(lC = 15 Ade,IB = 1.5 Ade) MJ3771, MJ3772 - - 1.8
(lC = 20 Ade, IB = 2.0 Ade) MJ3771, MJ3772 - - 2.5
'Base·Emitter On Voltage (Note 1) VBE(on) Vde
(lC = 15 Ade, VCE = 4.0 Vde) 2N3771 - - 2.7
MJ3771 - - 1.7
(lC = 10 Ade, VCE = 4.0 Vde) 2N3772 - - 2.2
MJ3772 - - 1.7
Current·Gain-Bandwidth Product for MHz
(lC= 1.0 Ade, VCE =4.0 Vde,f= 50 kHz) 2N3771,2N3772 0.2 - -
(lC= 1.0 Ade, VCE = 10 Vde,f= 1.0 MHz) MJ3771, MJ3772 2.0 - -
Small Signal Current Gain hfe 40 - - -
(lC = 10 Ade, VCE =4.0 Vde,f= 1.0 kHz)
Rise Time MJ3771, MJ3772 tr - 350 - n'
(VCC = 10 Vdc,
Storage Time MJ3771, MJ3772 ts - 700 - n.
IC= 10 Adc,
IBI = IB2 = 1.0 Adc) MJ3771, MJ3772
Fall Time tf - 300 - n.
'Indica_ JEDEC Registered D8t8 (2N3771, 2N3772).
Note 1: Pulse Test: Pulse Width S; 300 Jl.S, Duty Cycle S; 2.0%.
2-607
2N3771, 2N3772, MJ3771, MJ3772 (continued)
ACTIVE REGION DC SAFE OPERATING AREA
FIGURE 1 - 2N3771, 2N3772 FIGURE 2 - MJ3771, MJ3772

30
,, 'l r&'"'i>"
0
,, \ 1\ " \. I\, I
'\.I
~
~
\
r-.~t~t\
0
,, ~~~
f\
0
I~ \\"'i>
I-
~
t\ % I\.
~.%\ l\ 0
«.
if
«.\%,
i\, 1\ I'. \
7.0
5. 0
...
10 r\: if I\.
1\ ~
," "1\
'"
:'5 '.
3. 0
·i i
I- I-
ill
II:
II:
7.0 " -,
TJ' 2000 C
~
J = 2ioo
::::> 2.0
1
,\
::::>
'-' ---Secondary Breakdown limited '-' ---Secondary Breakdown limited
~ 5.0 I--- __ -Thermal Limitation Te:: 25 0 C II:
I-- - - - Thermal limitation Te == 250 C 1\
I-
1 1 1 , , I" III '. r\1\ t ICurves
I apply
I 1 11111 \
~ j 1. o below rated VCEO
r\~
belo~ o
8 Cu .... apply rated VCEO '-'
~ ~ O. 7
3.0
~ O. 5
1\
2.0 1\
jN3T f-
0.3
MJ3771-I I
'-
O.2
Mr7j
!N3J72
1.0
i "( O. 1
1.0 2.0 3.0 5.0 7.0 10 20 30 40 60 1.0 2.0 3.0 5.0 7.0 10 20 30 40 60
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate IC-VCE limits below

load lines for specific circuits must fall within the applicable Safe
Area· to avoid causing a catastrophic failure. To insure operation
below the maximum T J. power~temperature derating must be ob-
2-608
2N3783 thru 2N3785
(GERMANIUM)

gain, low-noise amplifier, oscillator and frequency
multiplier applications.
CASE 20
(TO-72)
MAXIMUM RATINGS
2N3783 2N3785
Collector-Base Voltage VCS 30 15 Vde
Collector-Emitter Voltage VCES 30 15 Vde
Collector Current 20
Ie mAde
Total Device Diss~atioo @ T A = 25 0 C PD 150 mW

Junction Operating" Storage Temperature TJ , -65 to +100 °c

Range Tstg
FIGURE 1 - 200 MHz TEST CIRCUIT: POWER GAIN & NOISE FIGURE
SHlno
I
eN 0.7 -9' pF
L·I OUT
0.7-9* PF~"*-fo) ~
2-8pF
470 pF
IN MOTU.
L·I 14 inch inside diameter. \i Incllionath, 4 turns #20 solid COjIper wire, center tapped.
470 f.! 14 inch inside diameter, close wound, 3 turns #26 solid copper wire. 1:1 ratio
bj·filler wound.
* Hiah Quality piston type capacitor.
Distance from emitter contact of trensistor 10 ,ro"': side 01 bypass capacitor
should be kept minimum.
2-l1 pF JO.ODIIlF
+10 -Vee
2-609

Collector-Base
Breakdown Voltage
BVCBO Ie: 100 ~Ade, IE : 0 2N3783,2N3784 30 - - Vde
2N3785 15 - -
Collector-Emitter
Breakdown Voltage
BVCES IC : 100 ~Ade, VEB : 0 2N3783, 2N3784 30 - - Vde
2N3785 15 - -
Collector-Emitter
Breakdown Voltage
BVCEO IC = 2 mAde, Ie = 0 2N3783, 2N3784 20 - - Vde
2N3785 12 - -
Emitter-Base
Breakdown Voltage
BV EBO IE = 100 ~Ade. IC: 0 All Types 0.5 - - Vde
Collector Cutoff Current ICBO VCB = 10 Vdc, IE : 0 All Types - - 5.0 ~Ade
VCB : 10 Vde, IE = 0, TA = +55 0 C 2N3783, 2N3784 - - 50
Emitter Cutoff CUrrent lEBO VEB = 0.5 Vde, Ie = 0 All Types - - 100 ~Ade
DC Forward Current hFE VCE = 10 Vde, IC = 3 mAde 2N3783, 2N3784 20 - 200 -

Transfer Ratio 2N3785 15 - 200
Collector-Emitter VCE(sat) IC = 5.0 mAde, IB : 1.0 mAde 2N3783, 2N3784 - - 0.25 Vde
Saturation Voltage 2N3785 - - 0.35
Base-Emitter VBE(sat) IC: 5.0 mAde, IB = 1.0 mAde 2N3783, 2N3784 - - 0.55 Vde
Saturation Voltage 2N3785 - - 0.65
Small-Signal Forward
Current Transfer Ratio hie IC : 3 mAde, VCE = 10Vde,l: 1 kHz 2N3783, 2N3784 20 - 200 -
2N3785 15 - 200
Current Gain -
Bandwidth Product
IT Ic = 3 mAde. VCE : 10Vde,l: 200 MHz 2N3783
2N3784, 2N3785
800
700
-
-
1600
1600
MHz
Collector-Base r'C
b e VCB :
10 Vde, IE = 3 mAde, I = 31.8 MHz 2N3783, 2N3784 1.0 - 6,0 ps
Time Constant 2N3785 1.0 - 10
Collector-Base Cob VCB = 10 Vde, IE = 0, I = 100 kHz 2N3783,2N3784 - - 1.0 pF

Capacitance 2N3785 - - 1.2
Power Gain Ge VCE = 10 Vde, IC = 3 mAde, f = 200 MHz 2N3783,2N3784 20 - 33 dB

2N3785 18 - 33
Noise Figure NF VCE = 10 Vde, IC = 3 mAde, f = 200 MHz 2N3783 - - 2.2 dB
RG = 50 ohms
2N3784 - - 2.5
2N3785 - - 2,9
Power Gain (AGe) Note 1 Ge(AGe) VCE = 10 Vde, IC = 15 mAde, I : 200 MHz 2N3783 - - 0 dB
2N3784, 2N3785 - 0 -
Noise Figure NF VCE : 10 Vde, IC : 3 mAde, f = 1000 MHz 2N3783 - - 6.5 dB
RG: 50 ohms (Note 2)

2N3784 - 7.0 -
2N3785 - 7.5 -
NOTE 1: AGe is obtained by increasing Ie' The circuit remains adjusted for VeE =- 10 Vdc and Ie =- 3 mAde.
NOTE 2: This Noise Figure was obtained using Hewlett-Packard Type 342A Noise Figure Meter and Type 349A NOise Source.
NORMALIZED DC CURRENT GAIN CHARACTERISTICS

1.6
VeE ~ -10Vdc
....... ......
-
I-'
i'-.
iJ~55y ...-
-- - _r-
~
."
I-
----- -- ...--- V' '\

/'"
/"'"
8 ..-"
/TJ~25°C
~\
- ~ \
O. 4
-1 -2 -3 -4 -5 -7 8 -9 10 20 30
2-610
Y ... INPUT ADMITTANCE Y ... REVERSE TRANSFER ADMITTANCE

CHARACTERISTICS CHARACTERISTICS
ITA = 25· Cunless otherwise noted) ITA = 25· Cunless otherwise noted)
INPUT ADMmANCE "rsus FREQUENCY REVERSE TRANSfER ADMITTANCE versus FREQUENCY
3.0
4 I I I II I I I II
Yca--IOVdc I--"" lie
20 f-1e=-3mAdc /' VCE = -IOYdc
t- Ic = -3 mAde
/ I
.§
2.5
II
6
Ii! i1
L- ~
I
2.0
V
V ;
"
1.5
~,
V
"- ~ ,/
~ "- !
1.0
['\b,. V ...
1\ ~ 0.5
~ .... > ~
-&. I--' ~~
-4.0
so 70 100 200 300 500 700
'"1\1000
~
70 100 200 300 SOO 700 1000

I. FREQUENCY (IMHz) I. FREQUENCY (/MHz)
INPUT ADMmANCE versus COLLECTOR CURRENT REVERSE TRANSFER ADMITTANCE VlrsUS COLLECTOR CURRENT
so 0.75
,J 200 Jz
40 I-- vc.-- IOVdc
V '~200M~Z
t-- YeE=-IOVdc
/'
K Ii
1/" O.SO
- boo
~
I
0
'7 ...........
i
""
~ 0.25
~
0
..........
-I0
~ ~
r-....
-20 0 -2 -4 -6 -8 -10 -12 -14 -16
- -8 -10 12
-&.
14 16
Ie. COlLECTOR CURRfNT !mAl Ie. COllECTOR CURRENT !mAl
INPUT ADMITTANCE versus COLLECTOR CURRENT REVERSE TRANSFER ADMITTANCE VlrsUS COLLECTOR CURRENT
40
,= 1000 MHz 3.0
VCI=-IOVdc
i--k
,=
IIi!
30 2.5
" '-... 1000 MHz
YeE = -IOVdc
boo
2.0
......... ~
~ -.!!:. I
; 1.5
----
.............
~
'-
I""
---
1.0
-10
-2
" -4
r--.....
-6
b,.
10
Ie. COlLECTOR CURRENT !mAl
-12 -14 -16
•
"" 0.5
-2 -4
r--- r--
-6 -8 10
Ie. COLLECTOR CURRENT !mAl
-&.
12 14 16
2-611
y,.. FORWARD TRANSFER ADMITTANCE

CHARACTERISTICS
y _. OUTPUT ADMITTANCE
CHARACTERISTICS
erA ~ 25' C.nless otherwise notedl erA = 25' Cunless otherwise notedl
FORWARD TRANSFErI ADMITTANCE versus FREQUENCY OUTPUT ADMITTANCE versus FREQUENCY
125 12
10 II
I"
r--., VeE ~ -IOVde
Ie = -3 mAde 1E VeE = -IOYde
le=-3mAdc
V
..s
-'" "'" -
8.0
~ .L
V
0
V~ r.... t-.... I
5
6.0
V
5
'" r--"" -~.

e:
5 4.0
,.,i /'
,/
-25
50 70 100 200
'"
300
f. FREQUENCY (MH,)
l'-...
.....
SOD
'".!:'-r-
700 1000
2.0
o
50
I"'""
70
~~
100
L
200 300
f. FREQUENCY (MH,)
L.
-f-
SOD
fo-"I-"r"
700 1000
fORWARD TRANSFER ADMITTANCE versus COLLECTOR CURRENT OUTPUT ADMITTANCE versus COLLECTOR CURRENT
90 3.0
1~2oo M~z
I-- ~
f- 1= ~oo MH~
I-- VeE ~ -IOVde YCE=-IOVde
I-"'"
2.
5r- I
"V o ....... "
r--
5
V 5
boo
0
!/ V- i"-- r--... ....... .0
'"
V
~ 15
0
-2 -4 -10
""I/.

-12
.......
~ r-....
-14 -16
o.5
0
6
- I--
8 10
~
12 14 16
FORWARD TRANSFER ADMITTANCE versus COLLECTOR CURRENT OUTPUT ADMITTANCE versus COLLECTOR CURRENT
30 15
1,),1000 MHz 1=lloooM~z
r-- VCE = -10 Vde _ Yc.--IOVdc
/
V
/
--... ~
- -boo
/
""'"
"'\
r--.......
r'\.
""-
N
---I::.-
-I/.
I
o
o ~ ~ ~ ~ ~ ~ ~
-~.
I ~
-- - -
-r-- 10 12 14
:-:.Lo
- 16
Ie. COLLECTOR CURRENT (mAl Ie. COLLECTOR CURRENT !mAl
2-612
MAG & MAXIMUM NF versus FREQUENCY NOISE FIGURE versus SOURCE RESISTANCE
50 ]0 4.0
2N3783 2N3783
f= 200 MHz
r--- t- VCE ~ -]0 Vde
Ic ~ -3 mAde 9.0
e-- VCE ~ -]0 Vde
40 8.0
"I'- 3.0
Ie ~ -3 mAde,:-------"
I'
K' MAG~~
4g"og.,
7.0 Ic~-2mAde0
Ic ~ -I mAde "'-
~
y
~ I'-.
-- ~~
30 6.0
~ iii
'" "'- V ;g
~
~
:--. '"=> ~ "-

11 5.0 1E 0:: 2.0
,/ ~ ~
20
TYPICAL GAIN
PER FIGURE I ~ V 4.0
~
~
~
~
li li
)/ 3.0
NF IRg ~ 50QI ...... V r---I'- 1.0
10 2.0
1.0
o o 040 50
50 70 100 200 300 500 700 ]000 70 100 200 300 400 500
f, FREQUENCY I MH,) R" SOURCE RESISTANCE lohmsl
GAIN versus COLLECTOR CURRENT CONTOURS OF CURRENT·GAIN - BANDWIDTH PRODUCT - IT

30 -16
,..... 1 1- I :i! ,,
2N3783 i I> r---~J r--- ~ t-~ ~
/ \ =
f 200 MHz
-14
~~ 1lfl
o
~
0
55 ""
20 VCE~-IOVde -
-12
V ..to
"
I\.
\ I I I1/ 150mw",
DISSIPATION
~ 10
'j / ~ II
~
;
..J 0 '"
TUNED AND NEUTRALIZED
'\~ \VV / V; I
'/ /
/, ~
..
""
@ Ic ~ -3mMe
~r
-4
-I 0
2 V
~~ P
2N3783
th,U
0
2"3785
-2 0 10 12 14
-5.0 -10 -IS -20 -2 -4 -6
Ie, COLLECTOR CURRENT ImA) Ie, COLLECTOR CURRENT ImAl
2-613
CASEll~.
~
(TO-3)
PNP silicon power transistors for medium-speed
to NPN type 2N3713 thru 2N3716.
Complement
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

2N3791 2N3792
Collector-BaSe Voltage VCB 60 80 Volts
Emitter-Base Voltage VEB 7.. 0 7.0 Volts
Collector Current IC 10 10 Amp
Collector Current (Peak) IC 10 10 Amp
Base Current (Continuous) IB 4.0 4.0 Amp
Power Dissipation PD 150 150 Watts
Thermal Resistance
iJJC 1.17 1.17 °C!W
Junction Operating and
Storage Temperature Range T J , Tstg -65 to +200 °c

Collector-Emitter Sustaining Voltage· VCEO(sus) • Vdc
(IC = 1100 mAde, IB = 0) llN3789, llN3791 60 -
llN3790, 2N3792 80 -
Collector-Emitter Cutoff Cl1rrent I CEX mAde
(VCE = 60 Vdc, VBE = -1. 5 Vdc) llN3789, llN3791 - 1.0
(VCE = 80 Vdc, VBE = -1. 5 Vdc) llN3790, llN37911 - 1.0
(VCE = 60 Vdc, VBE = -1. 5 Vdc, TC = 150°C) 2N3789, llN3791 - 5.0
(VCE = 80 Vdc, VBE = -1.5 Vdc, TC = 150°C) 2N3790, llN37911 - 5.0

(V EB = 7 Vdc) - 5.0
DC Current Gain· hFE • -
(IC = 1 Adc, VCE = II Vdc) llN3789, llN3790 115 90
llN3791, llN3792 50 150
(Ic = 3 Adc, VCE '" II Vdc) llN3789, llN3790 15 -
llN3791, llN37911 30 -
Collector-Emitter Saturation Voltage· • Vdc
(IC = 4 Adc, IB = 0.4 Adc) 2N3789, 2N3790
VCE(sat)
- 1.0
(IC = 5 Adc. IB =-0.5 Adc) llN3791, llN37911 - 1.0
Base-Emitter Saturation Voltage.

VBE(sat) • Vdc
(IC = 4 Adc, IB = 0.4 Adc) llN3789, llN3790 - ll.O
(IC = 5 Adc, IB = 0.5 Adc) 2N3791, llN37911 - 1.5
Current Gain - Bandwidth Product fT MHz
(VCE = 10 Vdc, IC = O. 5 Adc f =1.0 MHz) . 4.0 -
·Sweep Test: 1/2 Sine wave cycle @ 60 Hz •
2-614
TYPICAL SWITCHING TIMES AND TEST CIRCUIT
1.0
-.... Ums
i
:r-:-1
6.7ms VALUES SHOWN FOR
ic-5A,),,- -1,,-0.5A
~ ..............
+9V f = 150 cps, OIlTY CYCLE = 2%
j.
O. 7
"f\:,I'\.""r-,. . . . . r-.
""- ~
-30 V
61l
4W
w
~
o. 5
;=
ill
"~
[\..1', r'..
'r-. r' ...... ~
.L,.~
O. 3
O.2
0.1
If - -1,,1-leIl1
Vee -30V
Te - 25°C
I
0.2 0.3
I
0.5 0.7 1.0
--;,-
2.0
..... -
3.0
\.
~
r-
5.0
Ie, COLLECTOR CURRENT lAMP)

160
u; 140
~
.............
120 t--.
~ ..............
z
0 100
~ 80
..............
~ 60
..............
~ ...............
~ 40
,f 20
...............
...............
25 50 75 100 125 150 175 200
Te , CASE TEMPERATURE 1°C)
Safe area curves are indicated. Both limits are applicable and must be observed.
ACTIVE-REGION SAFE OPERATING AREAS

2N3789,2N3791 2N3790,2N3792
10
500!,s - 5001" -
\4 n- 2501's - 2501's -
"\.
Det.Sms i.>.,.\ 1\ \ \
ySO!,'
.~ L"-. ~ "~ ~
t\ 2 <56!'. -
"\ 1\\ DCt.Sm. -'-.. "\ .~
~
1m. k\\ \ \ fI'\. \. 1\ \ \'
!
~
1.0 ~ \V ~.
1m. ~
0 ~\hl
&l 0.7 "\. \.
::::l
8 0.5
Ji """\\.\
0.3 '-..\'
~
0.2
0.1
o 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90
VeE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate IC - VCE limits below which the device will not go into secondary
breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid
causing a collector-emitter short. (Duty cycle of the excursion make no significant change in these safe
areas.) To insure operation below the maximum TJ, the power-temperature derating curve must be ob-
2-615
LARGE SIGNAL CHARACTeRISTICS - TYPE 2N3789, 2N3790

(PULSE TEST,pulse width = 200 "'S, duty cycle = 1%)
TRANSCONDUCTANCE CURRENT GAIN *

10 10
VeE 2V
7.0
5.0
, 7.0
5.0
~
3.0
I(
" ""
~
VeE ~ 2 V
3.0
IA~
~ 2.0 ~ 2.0
/ g
ffi
I 1. 0
/1/ ~
CI:: 1.0
~
ir! ~
~ 7 ~ 07
--
0
I .9 o. 5
.§ O.5
I TJ ~ -40°C
O.3 II TJ ~ +25°C
O. 3
o.2
r-
- TJI=+:WCI
O.2
/,
fI-
IJI ~I-iol
TJ :: 't25°C
O. I I O. 1 rJ. !jJllitn
o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000
V.., BASE·EMITTER VOlTAGE (VOLTS) I" BASE CURRENT ImA)
* Dashed line indicates metered base current minus leBo of the transistor at 175°C.
INPUT ADMITTANCE SATURATION REGION

1000 1.0
/10 IS h,,@2V
700 /1F IS FORCED GAIN
500 lIe/l~
TJ = +25°C
v, 2V
300
200 h 0.8
'(/
~
JV ~
~~ 0.6
I'-r-,. r-- le= SA
ili
t=
/ '-r-. I
10
7.0
5.0
II
i
~
0.4
.....
r-- r--
r""'"-
Ic =3A
I
le= IA
0.2
3.0 ...... TJ= -40°C
2.0
'-r- I
TJ = +25°C
I
I Ti=+iw~
1.0 o
o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 o 2
V", BASE,EMITTER VOlTAGE IVOLTS) OVERDRIVE FACTOR (/1o//1rJ
2-616
LARGE SIGNAL CHARACTERISTICS - TYPE 2N3791, 2N3792

(PULSE TEST, pulse width - 200 p.sec; duty cycle - 1%)
TRANSCONDUCTANCE CURRENT GAIN

10 0
7.0 7.0 Ve. ~ 2V

5.0 IP' 5. 0
/ ./
yo
3.0 3.0
i 2.0
I Ve.~2V
~ 2. 0
V ~
§
B 1. 0 /11 iB 1.0 ~
g g
~ O.
7 ~ o. 7
j} O. 5 .ld 0.5
I -r- TJ ~ -40'C V-
I i--c... TJ ~ +25'C
o. 3 I I I
0.3
f--
I ..... TJ ~ -40'C
o. 2
-r-TJ~+lWC
0.2 .,. -TJ~ +25'C
""'TJ - +17S'C
o. 1 O. 1 11111111 I
o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
V", BASE·EMITTER VOLTAGE (VOLTS) I" BASE CURRENT (mAl
Dashed line indicates metered base current minus leBO of the transistor at 175-0.
INPUT ADMITTANCE SATURATION REGION

1000 1.0
,80 (S h,,@2V
700
500
~ =Ve, 2V fl. IS FORCED GAIN
«e/lol
T, ~ +2S'C
300
/. ;- ./ 0.8
200
1/ ./
// /
~
1\
~
100
70
50
~
,.
~ 0.6
'" ......... -., le~SA
i ~ 1\
~
30
20
I,
i 0,4
"- .........
- le=3A
I
-
'- --
-"
10
I I
~ Ie 1A
7.0 ,;:
5.0
TJ ~ -40'C Q.2
3.0 I I
II '--r-.- TJ ~ +25'C
2.0 __ TJ + !75'C
II ~
1.0 '''-1 I I I o
o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 o 2 3
V", BASE·EMITTER VOLTAGE (VOLTS) OVERDRIVE FACTOR (,801 P"
2-617

200
2N3789, 2N3790 YeE-2V I
100 = TJ +l7Soc hi lie II1.J
-
FE= I.+lclo
~ 70 TJ +2SoC i'
i'
ts
:Ii!
50 :::r: - -40°C ~
~ t--...
B
~&
.1 30 -.....;:::
a ~ TJ - +2Soc
~~
10 f'~"
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Ie, COLLECTOR CURRENT IAMPI

500
--------
- 2N3791, 2N3792
300
200
TJ
TJ
+175°C
+2SoC
- r-- ....... ...... h
.'
YeE-2V
le-lelO
FE= 1.+lclo
..'. I
TJ - -40°C
..... t'-~ I I
a
TJ +2Soc
a
...... ........
a
~
~-+175°C
~~
a ~~
20 ""'r:::~
r"'~
I0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Ie. COLLECTOR CURRENT IAMPI
SATURATION VOLTAGES TEMPERATURE COEFFICIENTS

2.4
2.0
~
-
Pi AL~ TYP~S
TJ - +25 C I I I
1
+5.0 ,--,---,---,---.,..--r--,---,---,---,....--,
+4.0
;til 1.6
- p. - le/l, (FORCED GAINI
VeE-2V It
~ L
~ 1.2 ~p. - 10
, ~~
~-'- 0.8 - r--VIElut) L..-
;
;: - ~V.. P. 10 ~
.- .......,.
O.4
- t-- _VCEI ...tl
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 - 3.0!:-O--f::----,-f-::---::':-~4.0::-""'S;';.O:---::6.'::-0--f;;---;t;;-----;!-;;--t1·0
Ie. COLLECTOR CURRENT (AMPI Ie. COLLECTOR CURRENT lAMp)
2-618
2N3796 (SILICON)
2N3797
Silicon N-channel MOS field-effect transistor de-

signed for low-power applications in the audio frequency
range.
MAXIMUM RATINGS (TA = 2SOC unless otherwise noted)

Drain-Source Voltage VDS Vdc
2N3796 25
2N3797 20
Gate-Source Voltage VGS ±30 Vdc
Drain Current ID 20 mAdc
Power Dissipation at T A = 25°C PD 300 mW

HANDLING PRECAUTIONS:
MOS field-effect transistors have extremely high input resistance. They can be damaged
by the accumulation of excess static charge. Avoid possible damage to the devices while
handling, testing, or in actual operation, by following the procedures outlined below:
1. To evoid the build-up of static charge, the leads of the devices should remain
shorted together with a metal ring except when being tested or used.
2. Avoid unnecessary handling. Pick up devices by the case instead of the leads.
3. Do not insert or remove devices from circuits with the power on because transient
voltages may cause permanent damage to the devices.
2-619
ELECTRICAL CHARACTERISTICS IT A = 25°C unless otherwise noted)
Characteristic Symbol Min Typ MIx Unit

Drain-Source Breakdown Voltage BVOSX Vdc
(VGS = -4.0 V. 10" 5.0/lA) 2N3796 25 30 -
(VGS" -7.0 V. 10" 5.0 /lA) 2N3797 20 25 -
Zero-Gate- Voltage Drain CUrrent lOSS mAde
(Vos" 10 V, Vas = 0) 2N3796 0.5 1.5 3.0
2N3797 2.0 2.9 6.0
Gate-Source Voltage Cutoff

(10 = 0.5 /lA, Vos " 10 V)
(IO" 2.0 p,A, VOS = 10 V)
2N3796
2N3797
VGS(off)
-
-
3.0
5.0
4.0
7.0
Vdc
HOn" Drain CUrrent mAde

Io(on)
(VOS " 10 V, VGS =+3. 5 V) 2NS796 7.0 8.3 14
2N3797 9.0 14 18
Drain... Gate Reverse Current· lOGO * pAde

(VOG " 10 V, Is = 0) - - 1.0
Gate-Reverse Current * IGSS * pAde

(VGS = -10 V, Vos = 0) - - 1.0
(VGS " -10 V, VOS = 0, TA = 1500 C) - - 200
Small.. Slgnal, CommoR-Source Forward Transfer Admittance

(VOS" 10 V, VGS = O,!" 1.0 kHz) 2N3796
IYla I 900 1200 1800
11. mhos
2N379? 1500 2300 3000

(Vos = 10 V, VGS " 0, f = 1.0 MHz) 2N3796 900 - -
2N3797 1500
- -
Small... Signal, Common-Source, Output Admittance Iyos I /J.mhos
(VOS" 10 V, VGS = 0, f" 1.0 kHz) 2N3796 - 12 25
2N3797 - 27 60
Small... Signal, Common-SouJ;ce, Input Capacitance Ciss pF

(VOS = 10 V, VGS "0, f" 1.0 MHz) 2N3796 - 5.0 7.0
2N3797 - 6.0 8.0
Small-Signal, CommoQ.-Source, Reverse Transfer Capacitance Cras pF

(VOS" 10 V, VGS = 0, f = 1.0 MHz) - 0.5 0.8
Noise Figure NF dll

(VOS" 10 V, Vas " 0, f" 1.0 kHz, RS " 3 megohms) - .3.8 -
... This value of current includes both the FET leakage current as well as the leakage curr~nt
associated with tl;1e test socket and fixture when measured under best attainable conditions.
2-620
TYPICAL DRAIN CHARACTERISTICS

20
/ V
+8
+7
20
/
v V +5.0
::5
I
TA ~ 25'C
18 18
~
IV
I-'"
/I V V
16
~/ V
+6
TA ~ 2S'C
16
Pv ~ I-'" - +4.0
~~
- -
+3.5
~ J ~
14 14
~
~
12
'I'
f
/
- r-
+S
12 Y
1/
V
V - i---
--- +3.0
+2.5
~ / +4
-
10
V ....----
'/ +2~
i.E 1/
/"
- V - +1.5
--
+3
V /- +1.0
+2
+o.s
. / r-' I r
~ +1 VG'~O
'/ V
/r-' VGS ~ 0 v / -0.5

=
VI-"" O.S '/ -1.0
1.0 -1.5
1.5 -2.0
o 2 8 10 U M U U m n M U 10 12 14 16 18 20
vo,. ORAIN-50URCE VOLTAGE (VOLTS) Vos. DRAIN-SOURCE VOLTAGE (VOLTSI
COMMON SOURCE TRANSFER CHARACTERISTICS

1111 I 1111 I,
llill I , 1111
vo, ~ 10V I vo, ~ IOV
TA~25'C TA ~ 2S'C II
I
I-'"
I--
-2 -2
f...-~
-3 -3
-4 -4
0.02 0.03 0.05 0.1 0.2 0.3 O.S 1.0 2.0 3.0 5.0 10 20 0.02 0.03 O.OS 0.1 0.2 0.3 O.S 1.0 2.0 3.0 S.O 10 20
10 • DRAIN CURRENT (rnA) 10 • DRAIN CURRENT (mA)
2-621
FIGURE 5 - FORWARO TRANSFER AOMmANCE FIGURE 6 - AMPLIFICATION FACTOR

10000 3SO
5000
..,,-
300
\ L1
2N3797
. / ~rL
I' " 2SO \ \ \
I\.
\
\
r:::
~ 2N3796
./ ~
~ 200
z
\
I ISO
2N3796
\.
,,/
./
/'
./
Vos ~ 10V
,;,
100
VD'~ 10V
,,'""~ I\.
I\r-,
200 TA~2S'C
SO - TA~2S'C
r'-.
100 I'Tn o
,~
,, 1kHz
~
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 1.0 10 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
ID. ORAIN CURRENT (mAl I.. DRAIN CURRENT !mAl
FIGURE 7- OUTPUT AOMmANCE FIGURE 8 - NOISE FIGURE

1000 14
\ ,
500
r--
r---
VDS~10V
TA~2S'C
'~I kHz /J
12
\
:-..
Vos~
"'
V6'~0
10V
TA~2S'C_
- r--
I-
200
'~I
~
kHz
2N3797 10
l\
.I" 2N3796 -
~ '/ \.
-.,.! V
10 / .\.
I\. .I
5.0 ~ ./
2.0 ./
1.0
V
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
ID•ORAIN CURRENT (rnA) R,. SOURCE RESISTANCE (meaOOms)
2-622
2N3798, 2N3798A (SILICON)
2N3799,2N3799A
PNP SILICON ANNULAR TRANSISTORS

PNP SILICON
· .. designed for low-level, low-noise amplifier applications. AMPLIFIER
TRANSISTORS
• High Collector-Emitter Breakdown Voltages-
BVCEO = 60 Vdc (Min) - 2N3798, 2N3799
90 Vdc (Min) - 2N3798A, 2N3799A
• DC Current Gain - @ IC = 500 IlAdc
hFE = 150-450 - 2N3798, 2N3798A
300-900 - 2N3799. 2N3799A
• Low Noise Figure -
NF = 1.5 dB (Max) @ 1.0 kHz and 10 kHz
!
*MAXIMUM RATINGS
2N3798 2N3798A
Rating Symbol Unit
2N3799 2N3799A
l
. 0.209
Collector-Base Voltage VCB 60 90 Vdc rnor-
CoHector Current - Continuous
VEB
IC
5.0
50
Vdc
mAde
g:\;~ OIAll DlA ~I
Total Device Dissipation @TA ., 25°C Po 0.36 Watt 0.110
4
Total Device Dissipation @lTC =25 0 C Po 1.2 Watts 0
Derate above 250 C 6.9 wJDc
DC 0.500
Operating and Storage Junction TJ.Tstg -65 to +200
Temperature Range ~DlA
Pin 1. Emitter
2. Base
j
THERMAL CHARACTERISTICS 3. Collector
Characteristic Symbol Max Unit 0.050
Thermal Resistance. Junction to Case 9JC 0.15 °C/mW 0.100
Thermal Resistance, Junction to Ambient 9JA 0.49 °C/mW
-Indicatas JEOEC Registered Data.

0.028
if.04lI

CASE 22 (1)
(TO-IS)
2-623
2N3798, 2N3798A, 2N3799, 2N3799A (continued)
"ELECTRICAL CHARACTERISTICS ITA" 25°C unless otherwise noted I

Char,acteristic
OFF CHARACTERISTICS
(IC" 10 mAde, IB" 01 2N3798,2N3799 60 - --
2N3798A,2N3799A 90 - -
(Ie" 10 MAde, IE = 01 2N3798,2N3799 60 - -
2N3798A,2N3799A 90 - -
Emitter-Base Breakdown Voltage BVEBO 5.0 - - Vde
(IE = 10MAde, IC = 01
Collector Cutoff Current ICBO JLAdc
(VCB = 50 Vde, IE = 01 - - 0.01
(VCB = 50 Vde, IE" 0, TA" 1500 CI .- - 10
Emitter Cutoff Current lEBO - - 20 nAdc
(VBE = 4.0 Vde, IC "01
ON CHARACTERISTICS
DC Current Gain(1) hFE -
(lC = 1.0 MAde, VCE" 5.0 Vdel 2N3799,2N3799A 75 - -
(lC = 10 MAde, VCE = 5.0 Vdel 2N3798,2N3798A 100 - -
2N3799,2N3799A 225 - -
(lC" 100 MAde, VCE = 5.0 Vdel 2N3798,2N3798A 150 - -
2N3799,2N3799A 300 - -
IJC" 100 MAde, VCE = 5.0 Vde, T A" -55 0 CI 2N3798,2N3798A 75 - -
2N3799,2N3799A 150 - -
(IC" 500 MAde, VCE " 5.0 Vdel 2N3798,2N3798A 150 - 450
2N3799,2N3799A 300 - 900
(IC" 1.0 mAde, VCE = 5.0 Vdel 2N3798,2N3798A 150 - -
2N3799,2N3799A 300 - --
(IC = 10 mAde, VeE = 5.0 Vdel 2N3798,2N3798A 125 - -
2N3799,2N3799A 250 .. -
Collector-Emitter Saturation Voltage(1) VCE(,a,1 Vde
(IC" 100 MAde, IB= 10 MAdel - - 0.2
IIc = 1.0 mAde, IS = 100MAdei - - 0.25
Base-Emitter Saturation Voltage(1) VSE(,a,1 Vde
IIc = 100 MAde, IS = 10 MAdel - - 0.7
(lc" 1.0 mAde, IS" 100 MAdel .- .. 0.8
Base-Emitter On Voltage VSE(onl .. .. 0.7 Vde
(IC" 100 MAde, VCE = 5.0 Vdel

Current-Gain-Bandwidth Produc't(2) IT MHz
(lC = 500 MAde, VeE = 5.0 Vde, I = 30 MHzl 30 - -
(IC = 1.0mAde, VCE = 5.0 Vde, I = 100 MHzl 100 .. 500
Output Capacitance .. ..
4.0 pF
Cob
(Vca = 5.0 Vde, IE = 0, I" lookHzl
Input Capacitanci9 Cib .. .. 8.0 pF
(VSE = 0.5 Vde, IC = 0, I = 100 kHzl
I nput Impedance hie k ohms
(Ie = 1.0 mAde, VeE = 10Vde, I" 1.0 kHzl 2N3798,2N3798A 3.0 - 15
2N3799,2N3799A 10 - 40
Voltage Feedback Ratio h re .. .. 25 X 10-4
(IC = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHzl
Small-Signal Current Gain hie ..
(IC= 1.0mAde, VCE = 10Vde, 1= 1.0kHzI 2N3798,2N3798A 150 - 600
2N3799,2N37g9A 300 - 900
Output Admittance hoe 5.0 .. 60 ,lImhos
I
(IC" 1.0 mAde, VCE = 10Vde, 1= 1.0 kHz I
Noise Figure NF dB
lie = 100 MAde, VeE = 10 Vde, RG = 3.0 k ohmsl,
'~'OO"'. "W~"", 2N3798,2N3798A 4.0 7,0
..
2N3799,2N3799A - 2.5 4.0

Spot
f ~ 1.0 kHz, S.W. = 200 Hz 2N37S8,2N3798A - 1.5 3.0
Noise 2N3799,2N3799A ..
Q.a 1,5
I" 10 kHz, S.W. " 2.0 kHz 2N3798,2N3798A - 1.0 2.5
2N3799,2N3799A - 0.8 1.5
Broadband Noise-Bandwidth 10 Hz to 15.7 kHz 2N3798,2N3798A - 2.5 3.5
2N3799,2N3799A .. 1.5 2.5

(1)Pulse Test: Pulse Width :S;300 JlS, Duty Cycle 'S2.0%.
(2}fT is defined as the frequency at which Ihfel extrapolates to unity.
2-624
SPOT NOISE FIGURE

(VCE = 10 Vdc, TA = 25°C)
FIGURE 1 -SOURCE RESISTANCE EFFECTS,f= 1.0kHz FIGURE 2 -SOURCE RESISTANCE EFFECTS. f = 10 Hz

7.0 10
9.0
6.0 I IC = 1.0 rnA
8.0
5.0 \ 7.0
\ /
~ i"t\ I
.'\ ,./
:i! 4.0 \ \
IC = 10pA
/ ~ 6.0 100 P /1/
co
'"u:
w
00
0
z
3.0
2.0
\
"-
~1"tA
"-
/ :i!
co
'"u:w
00
~
5.0
4.0
3.0
I,,\:
"- '-" r--- /
10 pA
I'N. "'" 2.0
1.0 1.0mA
1.0
o I II o
100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k 100 200 500 loOk 2.0k s.Ok 10k 20k 50k lOOk
RS.SOURCE RESISTANCE (OHMS) RS. SOURCE RESISTANCE (OHMS)
FIGURE 3 - FREQUENCY EFFECTS

5.0
\\ IC = 100pA. RS= 30 kll RS=SOURCE RESISTANCE
4.0 \1\ I
[\.\ /1.0 rnA. 1.0 k!l
~ ,,~
w 3.0
I
'"co ~ ~ 10pA.l0k~1
'"
u: I'\. ~ ~
w 2.0 lbo pA. 3.0 kll
00
<3 ....... r--:: t--... ::::::
z 10pA.l00kll
1.0
i"'--r-.
r-
o
10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 20k 30k 50k 100 k
f. FREQUENCY (Hz)
2-625
FIGURE 4 - TYPICAL CURRENT GAIN CHARACTERISTICS

500
-'..-2N379l, 2N37lsA V}E =l.oU
z TA=125 0 C
;;: 300
to
I-
r-- .... r--
~
a: 25 0 C
=>
'" 200
'"c
~
-55 0 C
100
0.001 0.002 0.005 0.Q1 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mAde)
1000
r-2N3799,2N3799A VCE = 5.0 Vde

TA = 125 0 C
700
z
;;: r-- r--..
to
I-
~ 500
r-.
a: 250 C
a
'"c
ul
~ 300
-55 0 C
200
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mAde)
2-626
2N3800 thru 2N3804,A (SILICON)
2N3805,A,2N3806
thru
2N3810,A, 2N3811,A
2N3812 thru 2N3816,A, 2N3817,A
DUAL PNP SI LICON ANNULAR TRANSISTORS
. specifically designed for differential amplifier applications.
• Tight hFE Match: 5% PNP SILICON

• High hFE: to 225 (min) @ Ie = 10 I'Adc DIFFERENTIAL
• Low Noise: 1.5 dB (Max) @ 1.0 kHz and 10 kHz AMPLIFIERS
• hFE Match Temperature Tracking: from - 550 e to +1250 e
• Tight VBE Match: 1.5 mVdc
• 2N3810 JAN, JTX and 2N3811 JAN, JTX Available
'MAXIMUM RATINGS leach sidel

./ .. 2N3800 th,u 2N3804,A
Collector-Emitter Voltage . 2N3805,A
VCEO 60 Vdc
Collector-Base Voltage 60 Vdc , Case
VCB
655
Operating and Storage Junction T J, T stg -65 to +200 °c
Temperature Range
I
One Both
Side Sides 2N3806 thru 2N3810,A
2N3811,A
Total Device Dissipation @ T A = 25°C Po Case
Metal Can 12N3800 thru 2N3804,A 250 360 mW 654-04
2N3805,A
Metal Can 12N3806 thru 2N3810,A, 500 600 mW
2N3811,A 2N3812 thru 2N3816,A
Derate above 2So C 2.86 3.43 mW/oC 2N3817,A
Flat Package 12N3812 thru 2N3816,A, 250 250 mW Case 610A-03
2N3817,A
Derate above 2SoC 1.43 2.06 mW/oC
·'ndicates JEOEC Registered Data.

-
2N3800 thru 2N3804.A 2N3806 thru 2N3810,A 2N3812 thru 2N3816,A
2N3805,A 2N3811,A 2N3817,A
1 ~rl ~OlAt
~
D'195 0.170 '-j
fIN
~OIA r l
IT
0.050 D14D
~
'
MAX _J
O.050lP.
•J., j~~ _______--r.---'-------.::m::·:-'I
.Io (JII ~1~

0.250 MAX
DSDD
MIN t I l~
___ -.1.
,- I' I
PLANE &&If rn~m~ ~----I~ o~.~o --:iiT!ll:-:':-:D--1--~-i-c::---;:~7.~~::-------'-
r--
-H-m 0.200----,
- -OIOOT.P
020oT.P L It--0.1501M:D.D35
MIN MAX
Case Ca..
--r~~+·,!.~r'·"
".," 'l--otooTP
-
654-04 ~O.OOJ
655
--.- .f,""' t D.DD6
", ,,<y~
-0.D28
All L....sEl.ctricallylSOllledtromCasa
Case e10A-Q3
2-627
2N3800 thru 2N3804,A, 2N3805,A, 2N3806 thru 2N3810,A,2N3811,A,
2N3812 thru 2N3816,A, 2N3817,A (continued)
*ELECTRICAL CHARACTERISTICS (eech sidel (TA = 250 C unless otherwise notedl

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (11 BVCEO 60 - Vde
(lC = 10mAde,IB = 01
(lc = 10/tAde, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 6.0 Vde
(IE = 10/tAde, IC = 0)
Collector Cutoff Current ICBO /tAde
(Vce = 50 Vde,IE = 0) - 0.01
(VCB = 50 Vde,IE = ,0, TA = 150°C) - 10
(VBE(off)= 4.0 Vde, IC = 0) - 20
ON CHARACTERISTICS
DC Current Gain (11 hFE -
(lC = 1.0 /tAde, VCE = 5.0 Vdel
2N3B01,3,5,A,7,9,11,A,13,15,17,A 75 -
(lc = 10 /tAde, VCE = 5.0 Vdel
2N3BOO,2.4,A,6,8,10,A,12.14.16,A 100 -
2N3B01,3.5,A,7,9,11,A,13,15,17.A 225 -
(lC = l00/tAde, VCE = 5.0 Vdel
2N3800,2,4,A,6,8,10,A,12,14,16,A 150 450
2N3B01,3,5.A,7,9,11,A,13,15,17,A 300 900
(lc = l00/tAde, VCE = 5.0 Vde. TA = -550 CI
2N3800,2,4,A,6,8.10,A.12,14.16,A 75 -
2N3B01,3.5.A,7.9,II,A,13,15,17,A 150 -
(lC = 500 /tAde, VCE = 5.0 Vdel
2N3800,2.4,A,6,8,10,A,12,14,16,A 150 450
2N3B01,3,5,A.7.9,11.A,13,15,17,A 300 900
(lC = 1.0 mAde, VCE = 5.0 Vdel
2N3BOO,2.4,A.6,8,10.A,12,14,16,A 150 450
2N3B01,3,5,A.7,9,II.A,13,15,17,A 300 900
(lC = 10 mAde, VCE = 5.0 Vdel
2N3800,2.4,A,6,8,10.A,12,14,16,A 125 -
2N3801 ,3,5.A.7.9.11 ,A,13.15,17,A 250 -
Collector-Emitter Saturation Voltage (11 VCE(satl Vde
(lC = l00/tAde,IB = 10/tAdel - 0.2
(lC = 1.0 mAde, IB = 100/tAdel - 0.25
Base-Emittar Saturation Voltage (11 VBE(satl Vde
(lC = l00/tAde,IB = 10/tAdel - 0.7
(lC = 1.0 mAde. (B = l00/tAdel - 0.8
Base-Emitter On Voltage VBE(onl Vde
(lC = 100 /tAde, VCE = 5.0 Vdel - 0.7
Current Gain - Bandwidth Product fT MHz
(lC = 500 /tAde, VCE = 5.0 Vde, f = 30 MHzl 30 -
(lc = 1.0 mAde, VCE = 5.0 Vde, f = 100 MHzl 100 500
Output Capecitanee Cob pF
(VCB = 5.0 Vde, IE = 0, f = 100 kHzl - 4.0
Input Capacitance Cib - 8.0 pF
(VBE(offl = 0.5 Vde, IC = O. f = 100 kHzl
Input Impedance hie KIT
(lC = 1.0 mAde. VCE = 10 Vde, f = 1.0kHzl
2N3800,2.4,A,6.8,10,A,12,14,16,A 3.0 15
2N3BOI ,3,5,A,7.9.11 ,A.13,15,17,A 10 40
Voltage Feedback Retio hr. - 25 X 10- 4
(lC = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHzl
(lC = 1.0 mAde. VCE= 10 Vde, f = 1.0 kHzl
2N3800,2,4.A,6,8,10.A,12,14,16,A 150 600
2N3B01.3.6,A,7,9,II.A,13,15,17,A 300 900
2-628
2N3800 thru 2N3804,A, 2N3805,A, 2N3806 thru 2N3810,A, 2N3811,A,
2N3812 thru 2N3816,A, 2N3817,A (continued)
O'Iaracteristic Symbol Min Max Unit
SMALL-SIGNAL CHARACTERISTICS (continued)
r"'
Output Admittance hoe 5.0 SO "mhos
(lC = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
Noise Figure NF dB
(IC = 100 "Ade, VCE = 10 Vde, RG = 3.0 k ohms
",.'W ~,."'
2N3800, 2.4,A,S,8,10.A,12,14,IS,A - 7.0
2N3801,3,5.A,7,9,11,A,13,15,17,A - 4.0
Spot _ _
N .
olse
1- 1.0 kHz, BW - 2.0 kHz 2N3800,2.4,A,6,8,10,A,12,14,IS,A - 3.0
2N380',3,5,A,7,9,1',A,13,15,17 .A - 1.5
1= 10 kHz, BW = 200 Hz 2N3800,2,4,A,6,8,10,A,12,14,16,A - 2.5

2N3801,3,5,A,7,9,11.A,13,15,17.A - 1.5
Broadband Noise Bandwidth 2N3800,2,4.A,6,8,10,A,12,14,16.A - 3.5

10 Hz to 15.7 kHz 2N3801,3,5,A,7,9,11.A,13,15,17,A - 2.5
DC Current Gain Ratio (2) hFE l/hFE2 -
(lC = 100 "Ade, VCE = 5.0 Vde) 2N3802,3,8,9,14,15 0.8 1.0
2N3804,5,IO,I',16,17 0.9 1.0
2N3804A,5A,10A,IIA,I6A,17A 0.95 1.0
(lC = 100 "Ade, VCE = 50 Vdc, T A = -55 to +1250 C)
2N3804A,5A,10A,11A,16A,17A 0.85 1.0
Ba.. Voltage Dilferential IVBE 1-VBE21 mVde
(lC = 10 "Ade to 10 mAde, VCE = 5.0 Vde)
2N3802,3,8,9,14,15 - 8.0
2N3804.A,5,A,1 O,A,I',A, IS,A,17 ,A - 5.0
(Ie = 100 /JAde, VCE = 5.0 Vde) 2N3802,3,8,9,14,15 - 5.0
2N3804,5,IO,I',16,17 - 3.0
2N3804A,5A,10A,IIA,16A,17A - 1.5
Ba.. Voltage Differential Gradient lIlVBE 1-VBE21 mVde
(lC = 100 "A dc, VCE = 5.0 Vde, TA = -55 to +250 C)
2N3802,3,8,9,14,15 - 1.6
2N3804,5,IO,1',IS,17 - 0.8
2N3804A,5A,10A,11 A,ISA,17 A - 0.4
(lC = 100 /JAde, VCE = 5.0 Vde, T A = +25 to +1250 C)
2N3802,3,8,9,14,15 - 2.0
2N3804,5,10,1',IS,17 - 1.0
2N3804A,5A,10A,IIA,16A,17A - 0.5
*Indicates JEDEC Registered Dat8.
(1) Pulse Test: Pulse Width <;;;300 "s. Duty Cycle <;;;2.0%.
(2) The lowest hFE reading is taken as hFE1 for this ratio.
SPOT NOISE FIGURE (VCE = 10 Vde, TA = 25°C)

FIG'URE 1 - SOURCE RESISTANCE EFFECTS,' = 1.0kHz FIGURE 2 -SOURCE· RESISTANCE EFFECTS,' = 10 Hz
7.0 10
I
I 9.0
6.0 Ic=I.OrnA
8.0
5:0 \ 7.0 \ /
~ \ I .\. V
\\
IC = 10"A
/ ~ 6.0 100"/.1
w
cr
=>
4.0
~ \. /
w
cr
=> 5.0
I, "- .......
'"u::
w 3.0 \ \ "- '"u::w 4.0
"\ ./
r\ 1"\
0"' ~~jA "'0z
z 2.0
1.0
I'N.
1.0 rnA
" ...
3.0
2.0
-"- 10"A
1.0
o 1III o
100 200 500 1.0k 2.0k 5.0k 10k 20k SDk lOOk 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50k lOOk
RS. SOURCE RESISTANCE (OHMS) RS. SOURCE RESISTANCE (OHMS)
2-629
2N3800 thru 2N3804,A, 2N3805,A, 2N3806 thru 2N3810,A, 2N3811 ,A,
2N3812thru 2N3816,A, 2N3817,A(continued)
FIGURE 3 - SPOT NOISE FIGURE

FREQUENCY EFFECTS
5.0
r\\ IC" 100 "A, RS" 30 kn RS"SOURCE RESISTANCE
4.0 \ V I IlclE = 110 UC,IT~IJ 250~)

,\ /1.0 rnA, 1.0 kll
;w 3.0
'\ l\ I
'"'" I~ r- IO "A, 10 kn
"'w
;;:
I\. ~ ~ ~.i .l100 "A, 3.0 kn
2.0
" I" 1:::::, :::::1::::-

~
0
z 10 "A, 100 kn
"'I"-
r-.:: I
1.0
r"-_
o
10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 20k 30k SDk 100 k
f, FREUUENCY (Hz)

(TYPES 2N3BOO,2,4,A,6,B,10,A,12,14,16,A)
500
vclJLl
z TA"125 0 C
;;' 300
"'>-- r- I"-t--
~ 25 0 C
t--
'"
8 200
u
"
i
-55 0 C
100
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (rnA)

(TYPES 2N3801,3,5,A,7,9,ll,A,13,15,17 ,A)
1000
VCE " 5.0 Vdc

TA"125 0 C
700
z ~
;;' r--..
"'>-- r-..
~ 500
25 0 C r-
5'"
u
"
'"
~ 300
-55 0 C
200
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (rnA)
2-630
2N3818 (SILICON)
The RF Line
15 W -100 MHz
RF POWER
TRANSISTOR
NPN SILICON
NPN SILICON RF POWER TRANSISTOR
. designed for applications to 150 MHz.
• High Collector-Emitter Sustaining Voltage-

VCE(sus) ~ 80 Vdc (Min)
• Power Output -
Pout ~ 15 Watts at 100 MHz
• Power Gain -
GPE ~ 7.0 dB (Typ) at 100 MHz with 15 Watts RF Power
Output
MAXIMUM RATINGS INote 11

Collector-Emitter Voltage VCES 60 Vde 1--- 0.135
1-----0215
Collector-Base Voltage VCB 60 Vde
Emitter-Base Voltage VEB 4.0 Vde -U~i~
OIA
Collector Current - Continuous Ie 2.0 Ade
Base Current - Continuous IB 1.0 mAde
Total Device Dissipation@Tc '" 25°C PD 25 Watts
Operating and Storage Junction TJ.T stg -65 to +175 °e
Temperature Range
Power Input (Nominal) Pin 5.0 Watts
Power Output (Nominal) Pout 20 Watts
Note 1. The maximum ratings as given for de conditions can be exceeded on a pulse To convert inches to millimeters multiply by 25.4
basis. See electrical characteristics.
All JEDEC dimensions an0notes apply
STYLE 1. All leads isolated from case
CASE 36
TO-60
2-631
2N3818 (continued)
ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l) VCEO(sus) 40 - - Vde
(lC = 0.25 Ade, IB = 0)
Collector-Emitter Sustaining Voltage( 1) VCES(sus) 80 100 - Vdc
(lC = 0.25 Adc, RBE = 0)
Collector-Emitter Current ICES mAde
(VCE = 60 Vde, VBE = 0) - - 0.5
(VCE = 50 Vde, VBE = 0, TC = 1750 C) - - 1.0
Collector Cutoff Current ICBO - - 1.0 "Ade
(VCB = 50 Vde, IE = 0)
Emitter Cutoff Current lEBO - - 100 "Ade
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
(I C = 400 mAde, VCE = 2.0 Vdc) 5.0 - 50
(lc = 1.0 Ade, VCE = 2.0 Vde) 5.0 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 Vde
(lc = 1.0 Ade,lB = 250 mAde)
Base-Emitter Saturation Voltage VBE(satl - - 2.0 Vde
(lC = 1.0 Adc, IB = 250 mAde)
Current-Gain-Bandwidth Product tr 150 - - MHz
(VCE = 2.0 Vdc, IC = 400 mAde, f = 50 MHz)
Output Capacitance Cob - - 40 pF
(VCB = 25 Vde, IE = 0, f = 100 kHz)
FUNCTIONAL TEST
Power Input Test Circuit Figure 5 Pin - 3.0 3.75 Watts

(Pout = 15 W, f = 100 MHz, VCE = 25 Vdc,
Efficiency Ic(max) = 1.0 Adc) 7] 60 70 - %
(1 )Pulse Test: Pulse Width 'S10D ,",s, Duty Cycle = 2.0%.
2-632
2N3818 (continued)
FIGURE 1 - OUTPUT POWER versus FREQUENCY FIGURE 2 - OUTPUT CHARACTERISTICS

versus INPUT POWER
25 I00 20 1.0
20 BO it ~
,.
;;:
~« 1\ ~
.... 0.75 ~
....
~ Vcc = 25 V iii ~ iii
a'"'"
'"~ 15 .0 <3 '"
~
~ ....=>~
~
.... r\ '"
....
0
0.50
'"0
~
=> 40 f=100MHz
I': 10 I':
=>
0 Vcc = 15
Vr\ \ ~ =>
0 TC = 25 0C
8
~ 8 ~
0.25
o'? 5.0
\\r\ 20 ~
0..
Pin =13.0 W '"

10 20 50 100 200 300 1.0 2.0 3.0 4.0
f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS)
FIGURE 3 - OUTPUT POWER versus COLLECTOR VOLTAGE FIGURE 4 - OUTPUT POWER versus INPUT POWER
20 20
~ ./ ~
....
....
«
15 « 15
~ V ~
'"~
~
.... 10 V '"~
~
....=> 10
=>
I':
=> /' :==>
0
~ 5.0
o'?
/ Pin = 2.5 W
f=IOOMHz
0
} 5.0
/ TCr50C f=IOOMHz
TC = 25 0C
o /
o 5.0 10 15 20 25 30 1.0 2.0 3.0 4.0 5.0
VCE, COLLECTOR·EMITTERVOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)
FIGURE 5 - TEST CIRCUIT
L1: 5 Turns#l. AWG, tinned wire 1/4"10, 3/B" long,

tapped 2-3/4 Turns from ground. VCC
L3: 2 Turns #10 AWG, tinned wire, 112"10, 1/4" long.
1 I d. I .F DlSCAP
2.7-30 pF
RS =50 Q t 0r---"'JIk:--~------..,
L1 01---+--1 L3
2.7-30 pF T.U.T.
2-633
2N3821 (SILICON)
2N3822
2N3824
N-CHANNEL
JUNCTION
SILICON N-CHANNEL FIELD-EFFECT
TRANSISTORS
JUNCTION FIELD-EFFECT TRANSISTORS
SYMMETRICAL
(Type A)
.. designed for audio amplifier, chopper and switching applications.
. Drain and Source Interchangeable

.. Low Drain-Source Resistance -
rds(on) ,,;; 250 Ohms (Max) - 2N3824
.. Low Noise Figure - NF = 5.0 dB (Max) - 2N3821, 2N3822
.. High AC Input Impedance - Ciss = 6.0 pF (Max)
.. High DC I nput Resistance - IGSS = 0.1 nA (Max)
. Low Transfer Capacitance - Crss = 3.0 pF (Max)
.. 2N3821 JAN and 2N3822 JAN also Available
0.209
'MAXIMUM RATINGS 0230 t-
OIA I
Rating Symbol Value Unit QJEDIAl r
0.195 1\1
Drain-Source Voltage VOS 50 Vdc
STYLE 1 ih:;o
Drain-Gate Voltage 50 Vdc PIN 1 SOURCE I
m
VOG 1 DRAIN 1
Gate-Sou rce Va 1tage

Drain Current
Total Device Dissipation @TA "" 25°C

VGS
10
Po
-50
10
300
Vdc
mAde
mW
3
4
GATE
CASE LEAD
1 0,500
MIN
Derate above 25°C
Operating Junction Temperature TJ
2.0
175
mW/oC
°c
~:~i~ DIA
_J
0.100
0.028
0,048
To convert im;hes to millimeters multiply by 25.4

All JEO EC dimensions and notes applv
CASE 20
TO-72
2-634
2N3821, 2N3822, 2N3824 (continued)
*ELECTRICAL CHARACTERISTICS ITA ~ 25°C unless otherwise noted)
[ Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage VIBR)GSS -50 - Vde
IIG ~ -1.0 !lAde, VOS ~ 01
Gate Reverse Current IGSS nAdc
IVGS ~ -30 Vdc, VOS ~ D) - -0.1
IVGS ~ -30 Vde, VOS = 0, T A = 150°C) - -100
Gate-Source Cutoff Voltage VGSloff) Vde
liD = 0.5 nAde, VOS = 15 Vdc) 2N3821 - -4.0
2N3822 - -6.0
Gate-Source Voltage VGS Vdc
liD = 50 !lAde, VOS ~ 15 Vde) 2N3821 -0.5 -2.0
liD = 200 !lAde, VOS = 15 Vde) 2N3822 -1.0 -4.0
Drain Cutoff Current 101off) nAde
IVDS ~ 15 Vde, VGS = -8.0 Vde) 2N3824 - 0.1
IVOS = 15 Vde, VGS = -8.0 Vde, TA = 150°C) 2N3824 - 100
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current( 1)
IVOS = 15 Vde, VGS ~ D) 2N3821
2N3822
Forward Transfer Admittance IVfsl ,umhos
IVOS = 15 Vde, VGS = 0, f = 1.0 kHz)ll) 2N3821 1500 4500
2N3822 3000 6500
IVOS = 15 Vde, VGS ~ 0, f = 100 MHz) 2N3821 1500 -
2N3822 3000 -
Output Admittance(l) Ivosl /-lmhos

IVOS ~ 15 Vde, VGS ~ 0, f ~ 1.0 kHz) 2N3821 - 10
2N3822 - 20
Drain-Source Resistance rdslon) Ohms
IVGS = 0,10 = 0, f = 1.0 kHz) 2N3824 - 250
I nput Capacitance Ciss - 6.0 pF
IVDS = 15 Vde, VGS ~ 0, f = 1.0 MHz)
Reverse Transfer Capacitance Crss pF
IVOS = 15 Vde, VGS = 0, f = 1.0 MHz) 2N3821 - 3.0
2N3822 - 3.0
(VGS = -8.0 Vde, VOS ~ 0, f ~ 1,0 MHz) 2N3824 - 3.0
Average Noise Figure NF dB
(VOS = 15 Vde, VGS ~ 0, RS ~ 1.0 megohm, 2N3821,2N3822 - 5.0
f = 10Hz, Noise Bandwidth = 5.0 Hz)
Equivalent Input Noise Voltage en nv/Hzlh
(VOS ~ 15 Vde, VGS ~ 0, f ~ 10 Hz, 2N3821,2N3822 - 200
Noise Bandwidth ~ 5.0 Hz)
"'Indicates JEDEC Registered Data.

(l)Pulse Test: Pulse Width ~100 ms, Duty Cycle ~10%.
2-635
2N3823 (SILICON)
N-CHANNEL
JUNCTION
FIELD-EFFECT
TRANSISTOR
SILICON N-CHANNEL SYMMETRICAL
JUNCTION FIELD-EFFECT TRANSISTOR (Type A)
· .. designed for VHF amplifier and mixer applications.
• Low Cross·Modulation and Intermodulation Distortion

• Drain and Source Interchangeable
• Low 100·MHz Noise Figure - 2.5 dB (Max)
• Low Transfer and Input Capacitances-
Crss =.2.0 pF (Max)
Ciss = 6.0 pF (Max)
• 2N3823 JAN also Available
0178
1 0209
0230
OIA
t-
I
o 195 OIA 1\ n'
MAXIMUM RATINGS STYLE 1 I!..!1.Q
1
PIN 1- SOURCE 0210
Rating Symbol
~~f::EAO
Value Unit 2.
3.
Drain-5ource Voltage VOS 30 Vde 4.
Drain-Gate Voltage VOG 30 Vde 0.500

MIN
Gate-Source Voltage -30 Vde
~:~~; OIA
~
VGS
Gate Current IG 10 mAde
Total Device Dissipation@TA =2SoC Po 300 mW
Derate above 25°C 2.0 mW/DC
Operating Junction Temperature TJ 175 DC 0. 050 1-
Storage Temperature Range T stg ~5tD+200 DC I\ 0.100
0.028
0.048
To convert inches to millimetell multiply by 25.4

All JEDEC dimensions and notes apply
CASE 20
TO·72
2-636
2N3823 (continued)
*ELECTRICAL CHARACTERISTICS ITA = 250 C unless otherwise noted)

OFF CHARACTERISTICS
Gate-Source Breakdown Voltage VIBR)GSS -30 - Vdc
IIG = -1.0 "Adc, VOS = 0)
Gate Reverse Current IGSS nAdc
IVGS = -20 Vdc, VOS = 0) - -0.5
IVGS = -20 Vdc, VOS = 0, TA = 1500 C) - -500
Gate·Source Cutoff Voltage VGSloff) - -B.O Vdc
110 = 0.5 nAdc, VOS = 15 Vdc)
Gate-Source Voltage VGS -1.0 -7.5 Vdc
110 = 0.4 mAdc, VOS = 15 Vdc)
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current(l)
IVOS = 15 Vdc, VGS =0)
Forward Transfer Admittance IYfsl "mhos
IVOS = 15 Vdc, VGS = 0, f = 1.0 kHz) (1) 3500 6500
(VOS = 15 Vdc, VGS = 0, f = 200 MHz) 3200 -
Input Conductance Re(Yis) - 800 "mhos
IVOS = 15 Vdc, VGS = 0, f = 200 MHz)
Output Conductance ~mhos
IVOS = 15 Vdc, VGS = 0, f = 1.0 kHz)(l) IYosl - 35
(VOS = 15 Vdc, VGS = 0, f = 200 MHz) Re(yos) - 200
I nput Capacitance Ciss - 6.0 pF
IVOS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance Crss - 2.0 pF
IVOS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Common-Source Spot Noise Figure NF - 2.5 dB
(VOS = 15 Vdc, VGS = 0, RS = 1000 ohms, f = 100 MHz)
-Indicates JEQEC Registered Data.

(1)Pulse Test: Pulse Width = 100 ms, Duty Cycle ~10%.
2-637
2N3838 (SILICON)
1 2 4 5
Case 610-02
NPN PNP
NPN-PNP complementary pair silicon annular
transistor designed for switching and general purpose
MAXIMUM RATINGS (each side) (TA =25°C unless otherwise noted)

(Applicable from 0 to 10 mAdc)
Operating Junction Temperature Range TJ -65 to +175 Pc

stg
One Both
Side Sides
Total Device Dissipation @TA =25° C PD 0.25 0.35 Watt
Derate above 25°C 1. 67 2.34 mW/oC
Total Device Dissipation @T C = 25° C PD 0.7 1.4 Watt
FIGURE 1 - TURN·ON TIME TEST CIRCUIT

+8.3SV=r-
INPUT
o
-t"t- (Reverse voltage
-it,l- polarities when
INPUTO-t---"lM.-f-I I I testing the PNP
Zln=50n
t,~l.Ons
"To%'\; OUTPUT unit.)
PW~400ns
90%-~
Dutycycle ~ 2.0% =
FIGURE 3 - COLLECTOR·EMITTER NONLATCHING

FIGURE 2 - TURN·OFF TIME TEST CIRCUIT VOLTAGE TEST CIRCUIT
V,,= -1l.4V
Adjust for voltages +10 V +8.8V~-
---
shown for point "A". S.O .f
D--------_ ISV POINT
S.F 500n
TO seo E -6.2 V I "A"
P -It I
INPUT~ "A" t~Si~~n -Itl- INPUT~-'WY""I-H
Z,"~50n
t, ~ 10 ns 50 n IN916
C;. ~ 12 pF """"\. : no% PW0510.s
PW~ 10 ItS '--J--90% Dutycycle ~ 2.0%
Duty Cycle ~ Z.O% = ~
2-638
2N3838 (continued)
ELECTRICAL CHARACTERISTICS (each side) (TA =25·C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage'(11 BV CEO Vde
(IC = 10 mAde, IB = 0) 40 -
Colleetor-Emitter Nonlatehing Voltage (Figure 3) t Vde
VCEO(NL)t
(IC(on) = 600 mAde, IB(on) = 120 mAde, IB(Off) = 0) 40 -
(Ie = 10 /-LAde, IE = 0) 60 -
(IE = 10 /-LAde, IC = 0) 5.0 -
Collector Cutoff Current ICEV /-LAde
(V CE = 50 Vde, V BE (off) = O. 5 Vde) - 0.01
(V CE = 50 Vde, V BE (off) = O. 5 Vde, T A = 150' C) - 10

(V BE = 3.0 Vde, IC = 0) - 10
Base Cutoff Current I BEV nAde

(V CE = 50 Vde, VBE (off) = O. 5 Vdc) - 10
ON CHARACTERISTICS
(I C = 0.1 mAde, VCE = 10 Vde) 35 -
(IC = 1. 0 mAde, VCE = 10 Vde) 50 -
(IC = 10 mAde, V CE = 10 Vde) IU 75 -
(IC = 150 mAde, VCE = 10 Vde) (11 100 300
(IC = 150 mAde, V q.E = 1. 0 Vde)(11 50 -
Collector-Emitter Saturation Voltage (1) Vde
VCE(sat)
(IC = 150 mAde, IB = 15 mAde) - 0.4
Base-Emitter Saturation Voltage'(1) Vde

VBE(sat)
(IC = 150 mAde, IB = 15 mAde) 0.85 1.3
SMALL 'SIGNAL CHARACTERISTICS

(V CB = 10 Vde, IE = 0, I = 140 kHz) - 8.0
Input Impedance h. k ohm

Ie
(IC = 1. 0 mAde, VCE = 10 Vde, 1= 1. 0 kHz) 1.5 9.0

(IC = 1. 0 mAde, VCE = 10 Vde, I = 1. 0 kHz) 60 300
Output Admittance h /lmho

oe
(IC = 1. 0 mAde, V CE = 10 Vde, I = 1. 0 kHz) - 50
Noise Figure NF dB
(IC = 100 /-LAde, VCE = 10 Vde, RS = 1. 0 k ohm, I = 1. 0 kHz) - 8.0
Delay Time (V CC = 10 Vde, V BE(off) = 0 Vde, td - 10 ns

IC = 150 mAde, IB1 = 15 mAde, Figure 1)
Rise Time t
r - 40 ns
Storage Time (V CC = 10 Vde, IC = 150 mAde, t

s - 250 nS
Fall Time IB1 = IB2 = 15 mAde, Figure 2) - 90 ns

tl
IIIPulse Test: Pulse Width ~ 300 /-LS, Duty Cycle ~ 2.0%.
The highest value of collector supply voltage that may be safely used with a resistive load switching circuit in which
the collector current is 600 mAdc.
2-639
2N3866 (SILICON)
2N3866A
CME~
NPN silicon transistor, designed for amplifier, fre-
quency-multiplier, or oscillator applications in mili-
taryand industrial equipment. Suitable for uses as out-
put, driver, or pre-driver stages in VHF and UHF
(TO-39) equipment.
Collector connected to cue
MAXIMUM RATINGS (TA = 25 0 C unless otherwise noted)
Collector-Emitter VCEO 30 Vdc
Emitter-Sase Voltage VEB 3.5 Vdc
Collector Current IC 0.4 Amp
Total Device Dissipation@Tc=250C Po 5.0 Watts

Derate above 25 0 C 28.6 mW/oC
Operating and Storage Junction T J, T stg -65 to +200 °c

Temperature Range

I Characteristic I Symbol I Min Typ Max Unit
OFF CHARACTERISTICS
Collector-E mitter Breakdown Voltage BVCER 55 - - Vdc
(IC = 5.0 mAdc, RB E = 10 ohms)
Coliector·Emitter Sustaining Voltage BVCEO(sus) 30 - - Vdc
(IC = 5.0 mAdc, IB = 0)
Coliector·Base Breakdown Voltage
(IE = O,IC = 0.1 mAdc)
BVCBO 55 - - Vdc
Emitter·Base Breakdown Voltage BVEBO 3.5 - - Vdc

(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current ICEO - - 20 /JA
(VCE = 28 Vdc, IB = 0)
Collector Cutoff Current ICEX - - 100 /JAdc
(VCE = 55 Vdc, VBE = 1.5 Vdc)
ON CHARACTERISTICS
(IC = 0.36 Adc, VCE = 5.0 Vdcl 5.0 - -
(lc = 0.05 Adc, VCE = 5.0 Vdcl 2N3866 10 - 200
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A 25 - 200
COllector-Emitter Saturation Voltage VCE(sat) - - 1.0 Vdc
(lC = 100 mAdc, IB = 20 mAdc)
(lC = 50mAdc, VCE = 15 Vdc, f = 200 MHz) 2N3866 500 800 -
2N3866A 800 - -
Output Capacitance Cob - 2.0 3.0 pF
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TEST
Power Gain Test Circuit-Figure 1 G pe 10 - - dB
Power 0 utput Pin = 0.1 W, VCE = 28 Vdc Pout 1.0 - - Watts
f = 400MHz, TC = 25 0 C
Collector Efficiency 11 45 - - %
2-640
FIGURE 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR POWER-OUTPUT TEST

8·60
l,
0.9·7
RfC
5.611
l" 2 turns No. 18 Capacitor values in pF

wire, 1,4"10. unless otherwise
'AI> long. indicated.
Ls: 2%. turns, No. 18 wire Tuning capacitors

1'" 10, 3/16" long. are air variable.
VeE~-28V
FIGURE 2 - POWER OUTPUT versus FREQUENCY FIGURE 4 - PARALLEL INPUT RESISTANCE AND
(Class C) CAPACITANCE versus FREQUENCY (Class C)
2.5,----,--,--,----,---,---,---, 200 50
160 VJ~28V
EMITTER GROUNDED DIRECTLY TO CHASSIS
40
~ C,.~
§ 120
i
11.01-----+-;:;~o4;;:--+-~..._--+-""""'d--1
i 0.91-----+--'--=-+-""""e::---+-""""'d----P-..:-I
.: 0.81-----+--+--+-""'10..---+---+--1
O.7I-----+--+--+---+--""o..l---+--1
40
R'.~
~
'" ~
r-.:
r': ~ 15 WAITS
10 WATT_
10 WATT
10
1.5 WAfS
0.6 \"::100;:----'----;200==--.L-.-3=00;:----;±4OQ;:----:!:50""0----:::600 100 200 300 400 500 600 700 800 0
f, fREQUENCY (MHz! I. fREQUENCY (MHzl
FIGURE 3 - POWER OUTPUT versus POWER INPUT FIGURE 5 - PARALLEL OUTPUT CAPACITANCE
(Class C) versus FREQUENCY (Class C)
J J
2.5 10 .0
2.0 -
..1. f-175MHz ), .~ ,J !.
VeE~28V J
-- ,
EMITTER GROUNDED DIRECTLY TO fHASSIS 8. 0 EMITTER GROUNDED DIRECTLY TO CHASSIS -
i
---
VeE -28V r-
>- 1.5 0
r-
~ ~
! / ~
--
0
1.0
/' .......- 13.5V_
~
~t-
t--
i
... 0.5 /f'
~
..-- 2.0
1.5 WATTS
// / l.i WATT
'IV' 0
00 10 20 30 40 50 60 70 80 90 100 100 200 300 400 500 600 700 800
p,., POWER INPUT (mWI f. fREQUENCY (MHzl
2-641
FIGURE 6 - SMAlL-SIGNAL CURRENT GAIN FIGURE 7 - OUTPUT CAPACITANCE

versus FREQUENCY versus COLLECTOR VOLTAGE
4 ..... 7.0
22 I I
z 20
i'o I
3 I8 , Vca- !~Vde
Ic= 80mAde
ISI6
~ 14
2
I'
" ....... \
I: ....1(dB)
"
0 .........
i
8
6
""- ........ ,_Ih"l ..... I'--I---
1 4
---. '"
2"" R.ih!.)
0
2 o
40 60 80 100 200 400 600 800 1000 o 10 IS 20 25 30
f. FREQUENCY (MHzI VCI. COLLECTOR·BASE VOlTAGE IVde)
FIGURE 8 - fr versus COLLECTOR CURRENT

VCE = 15Vde
0 10VdC=:
~
---
6Vde
0
~
F- 3Vdc
0 -,
o
o 20 40 60 80 100
Ic. COLLECTOR CURRENT (mAde)
FIGURE 10 - DC CURRENT GAIN

FIGURE 9 - rb' Co versus COLLECTOR CURRENT versus COLLECTOR CURRENT
5 100
f=31.8MHZ
20
5
0
~-
.---
VCE= 15Vde
I-"
-
0 --.... VCE - 3Vde
10Yde
15 Vde
0 b
/"
5Vde
5 0
0 0
10 20 30 40 50 20 40 60 80 100
Ic. COLLECTOR CURRENT (mAde) Ic. COLLECTOR CURRENT (mAdel
2-642
y PARAMETER VARIATIONS
FIGURE 11 - SMALL·SIGNAL INPUT ADMITTANCE FIGURE 13 - SMALL·SIGNAL FORWARD TRANSFER

versus COLLECTOR CURRENT ADMITTANCE versus COLLECTOR CURRENT
100 280
240
10V~ --.!-.
80
VeE!.
VeE~ 15Vde
1= 200 MHz
---- - ; "",. ... -II,.
--
0
~ =
VeE 10Vde -
VeE= 15Vde - - -
.~ 1= 200 MHz
~
- - -- -- - Iii
\
~ .:::- 1--
20
I
,~ - - -- II.
....... ~- f-.
20
--
40
I--
60
- -
80 -
b;.- r -
100
-80
-120
o 20 40 60
80
FIGURE 12 - SMALL·SIGNAL REVERSE TRANSFER FIGURE 14 - SMALL·SIGNAL OUTPUT ADMITTANCE

ADMITTANCE versus COLLECTOR CURRENT versus COLLECTOR CURRENT
5 20
VeEI= 10V~ .!.. ~ v~e

VeEI 10 -1...
VeE~
I~
15Vdc
200 MHz
----r--- 16 VeE~ 15Vde - - -
1= 200 MHz
-
3
......
-- b~
-foo- l-- - - -- -- -'-- b••

2
-
~
r-_ r--
1""- 1"""
-I"
, "".- I ..
20 40 60 80 100 20 40 60 80 100
Ie. COLLECTOR CURRENT (mAdel Ie. COLLECTOR CURRENT (mAdel
DESIGN NOTE
Figures 11 through 18 show small-signal admittance-parameter data. This data can be used for
Class A amplifier designs.
For Class C power-amplifier designs, the small-signal parameters are not applicable. Figures 4 and
5 give parallel output capacitance and the parallel input resistance and capacitance for Class C power-
amplifier operation.
The parallel resistive portion of the collector load impedance for a power amplifier, RL', may be
computed by assuming a peak voltage swing equal to Vcc , and using the expression
R' Vce z
L ="'2'P
where P = RF power output. The computed R L' may then be combined with the data in Figures 2 and
3 to comprise complete device impedance data for Class C power amplifier design.
2-643
Y PARAMETER VARIATIONS
(VeE == 15 Vde, Ie =80 mAde, TA =25°C)
FIGURE 15 - SMALL·SIGNAL INPUT ADMITTANCE FIGURE 17 - SMALL·SIGNAL FORWARD TRANSFER
versus FREQUENCY ADMITTANCE versus FREQUENCY
80 800
0
~
,;. 0,
1-- .........
,./"
" \.
\
1\
r-....
"-
""
0
-II<.
--... .......... r'\ r--.....
,
0
0
"'~ .... ~
b;....... ............
~, 0
~ r-
-20 i'--
fI,
-40
50 70 100 200
f, FREQUENCY (MHz)
300 " 600
-200
50 70 100 200
f, FREQUENCY (MHz)
300 600
FIGURE 16 - SMALL·SIGNAL REVERSE TRANSFER FIGURE 18 - SMALL·SIGNAL OUTPUT ADMITTANCE

ADMITTANCE versus FREQUENCY versus FREQUENCY
24
I
I 20
l(
V /
/ 1il 16
-/V i~ 12 /
V
/ ~
/ /
V ~
g 8 ./
/ /
/ k[/ .!
Y
V
V
- - /'
--
r-
~ -I-- ~
_I-"
o o
50 70 100 200 300 600 50 70 100 200 300 600
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
2-644
2N3896 thru 2N3899
2N6171 thru 2N6174
Advance InforIllation THYRISTORS

PNPN
THYRISTORS 35 AMPERES RMS
SILICON CONTROLLED RECTIFIERS 100-600 VOLTS
.. designed for industrial and consumer applications such as power
~
O@
supplies, battery chargers, temperature, motor, light and welder
controls. PIN1G ...n
lCATt10GE
• Economical for a Wide Range of Uses CAS~ ANOOE
• High Surge Current - ITSM ~ 350 Amp ~, , f-- O~IO ~

, MAX
• Practical Level Triggering and Holding Characteristics-
10 mA (Typ) @ TC = 25 0 C
• Rugged Construction in Either Pressfit, Stud or Isolated CASE 174
Stud Package TO-203
2N3870
thru
MAXIMUM RATINGS 2N3873
*Repetltlve Peak Reverse Blocking Voltage \1 ~ VDRM Volts

(TJ '" -40 to +1000C)
1/2 Sine Wave, 50 to 400 Hz, Gate Open

2N3870, 2N3896. 2N6171
2N3871. 2N3897. 2N6172
2N3872, 2N3898, 2N6173
*Non.::p:~~~;e2:::9::e~:174
Blocking Voltage
-----+---:-:---+-----+--:-v,-o,-'' ---l PIN 1 GATE
2CATIIOOE
SllJG,ANOOE
(t:5.5.0 ms)
2N3870. 2N3896, 2N6171
2N3871, 2N3897. 2N617:1
2N3872, 2N3898. 2N6173
2N3873, 2N3899, 2N6174
* Forward Current AVG Amp

(T C -40 to +65 0 C)
0=
{+85 0 CI
"Peak Surge Current Amp

(One cycle, 60 Hz) (TC '" +650 C)
CASE 175
Circuit Fusing Considerations 2N3896
tTJ ~-40to+l00oCI
thru
(t '" 1.0 to 8.3 msJ
2N3899
·Peak Gate Power Watts
"Average Gate Power Watt
·Peak Forward Gate Current Amp
v-,o,-,,---1
Peak Gate V O l t a g e - - - - - - - - - - + - - = - - + - - = - - - + - - - c c
"Operating Junction Temperature

Range ~ D.
"Storage Temperature Range
II!III!IIIIIII
Stud Torque 2N3896 thru 2N3899 in. lb.
2N6171 thru 2N6174
'THERMAL CHARACTERISTICS
Characteristic Unit

2N3870 thru 2N3873. 2N3896 thru 2N3899
2N6171 thru 2N6174

CASE 235
(1) Ratings apply for zero or negative gate voltage. Devices shall not have a pOsitive bias
applied to the gate concurrently with a negative potential on the anode. Devices should 2N6171
not be tested with a constant current source for forward or reverse blocking capability thru
such that the voltage applied exceeds the rated blocking voltage.
2N6174
2-645
2N3870 thru 2N3873, 2N3896 thru 2N3899, 2N6171 thru 2N6174 (continued)

* Peak Forward Blocking Voltage VORM Volts
(TJ = 100oC)
2N3870,2N3896,2N6171 100 - -
2N3871,2N3B97,2N6172 200 - -
2N3872,2N3898,2N6173 400 - -
2N3873,2N3899,2N6174 600 - -
'If Peak Forward Blocking Current IORM rnA
(Rated VORM, with gate open, TJ = looo C)
2N3870,2N3896,2N6171 - 1.0 2.0
2N3871,2N3897,2N6172 - 1.0 2.5
2N3872,2N3898,2N6173 - 1.0 3.0
2N3873, 2N3899, 2N6114 - 1.0 4.0
... Peak Reverse Blocking Current IRRM rnA
(Rated VRRM,with gate open, TJ = 100oC)
2N3870,2N3896,2N6171 - 1.0 2.0
2N3871,2N3897,2N6172 - 1.0 2.5
2N3872, 2N3898, 2N6173 - 1.0 3.0
2N3873, 2N3899, 2N6174 - 1.0 4.0
"Forward "On" Voltage VTM - 1.5 1.85 Volts
(lTM = 69 A Peak)
Gate Trigger Current, Continuous de *TC - -40o C IGT - - 80 rnA
(Anode Voltage = 12 V, RL = 24 n) TC = 250 C - 10 40
Gate Trigger Voltage, Continuous de VGT Volts
(Anode Voltage = 12 V, RL = 24 n) *TC = _4Oo C - 0.8 3.0
(Anode Voltage = Rated YOM, TC = 250 C - - 1.6
RL = 100 n, T J = 100oC)
Holding Current "TC - -40°C IH - - 90 rnA
(Anode Voltage = 12 V, Gate Open) TC = 250 C - 10 50
RS = 500hrns)
Peak Initiating OnoState Current = 200 mA
*Turn-On Time (td + t r ) ton - - 1.5 mA
(lTM = 41 Adc, IGT =2oomAdc V = rated VORM, RS= 2500hms.
Rise Time = 0.05 p.s, Pulse Width = 10 (..Is)
Turn·Off Time toff p.s
'(lTM = lOA, IR = lOA) - 15 -
(lTM = 10 A, IR = 10 A, TJ = 100o C) - 25 -
Forward Voltage Application Rate dv/dt - 50 - V/p.s
(TJ = l00o C)
*'ndicates JEDEC Registered Data.
FIGURE 1 - CURRENT DERATING FIGURE 2 - POWER DISSIPATION
100 50
!'- Types 2N6171 thru 2N6174 must be derated
an additional 10%. For example, in Figure 1,
de
w ~~ the max Te at 20 A (1800 Conduction) is 700 C.
~ 40
5w- 90
~ ~ ~70C.
derated 33
a derating of 30 0 C. These types must be
0 C; therefore, the allowable Te (max) ...
I-
~'"' ~
",,,,""
"'w
'\ ~ I I '"w
;,:'" 80 ;,: 30
0:::>
i\ ~"'
~f--
.30°_ ~
I"I""'"
~I-
~ ... w
... " ,
:;;w 60°_
r. - ...'"
i~ 70 20
I~" CONDUCTION ANGLE- ~
xl-
...
:;; ,-1200 ......'<'""'de
...>
:;
U 60
~900 ~
" .=
I-
I- 1-,1800
'---t---t--f- CONDUCTION ANGLE
50
o 5.0 10 15 20 25 30 35 40 10 15 20 40
InAV), AVERAGE ON·STATE CURRENT (AMP) InAV), AVERAGE ON·STATE CURRENT (AMP)
2-646
2N3883 (GERMANIUM)
Medium-current, germanium PNPhigh-speed switch..;.

ing transistor_
CASE 31
(TO-5)
Rating Sym"bol Value Units

Collector Current (Continuous) IC 300 mAdc
Junction Temperature TJ 100 °C
Storage Temperature Tste: -65 to +100 °C
Device Dissipation @ 25°C Case Temperature PD 750 mW

Device Dissipation @ 25°C Ambient PD 300 mW

(Derate 4 m W/0 C)
COLLECTOR LATCH-UP VOLTAGE AND TEST CIRCUIT

250
200
1\, ADJUST VII for +0.5 Vat point A
ADJUST base puI$e for 5 ~ widIb
ADJUST coNectat pulse for duly CJCIe ~ 5"
1\ 80
TO OSCIll.OSCOP£
\ lATCII-UP TEST POWERSUP-PlY
510
\ LOAD LINE HP121& A 100
-5~
50
\ I\.
t..t.<2O ..
51
o
o 10 15
\ 20 25 30
Veo. COUECTOR.fMITTER VOlTAGE MllTS)
2-647
2N3883 (continued)
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted)

Col1ector-Base Breakdown Voltage BV CBO Vdc
(IC = lOO/olAdc. IE '" 0) 25 - -
Collector-Emitter Breakaown Voltage BVCEO Vdc
(IC = lOmAdc, = 0) ls 15 - -
(IE = lOO~Ade. IC = 0) 3,0 - -
Latch- Up Voltage LVCEX 20 - - Vdc
Collector-Emitter Leakage Current /LAde

ICES
(VCE = 15 Vdc, VEB = 0) - - 100
Base Cutoff Current IB ~Ade

(VCE = 15 Vdc, VEB = 0) - - 100
(IC = 20C mAde, VCE = 1. 0 Vdc) 30 - -
Collector- Emitter Saturation Voltage Vde
VCE(sat)
(IC = 200 mAde, IB = 40 mAde - 0.35 0.5

(IC =200 mAde, IB = 40 mAdc) 0,4 0.65 0.9

(V CB = 10 Vdc, IE = 0, f = 100 kHz) - 4.5 8.0
Input CapaCitance Cib pF
(VBE = 1 Vdc, IC = 0, f = 100 kHz) - 10 25
(V CE = 10 Vdc, IC = 40 mAde, f = 100 MHz) 100 300 -
Delay Time td - 8.0 15 ns
Rise Time t
r - 28 40 ns
Storage Time ts - 40 70 ns
Fall Time tf - 28 40 ns
, -
STORAGE TIME VARIATIONS
,"
'T
2.5
II, = 112
lei {Jo« I"
...... 1""
/'
,.,...... V
""
V
/
'I' ,,/
5 ,,/
/
1.0 5 "'"
-10
~
i'--
-20
I•• BASE CURRENT (mAdel
-so
1"11,,. CIRCUIT DtlIV£ RATIO
10
2-648
2N3883 (continued)
-IO.tY _--'W_-.----_
50
Scope t. ,,.; 5 "S

250 Scope K,N ~ 100 KI}
Scope C'N ,.; 10 pF
GENERATOR z... = 501} 50 250 Ie = 200mA

INPUT PULSE I, < 5ns I" =40mA
In=40mA
-lOY
TYPICAL RISE AND FALL TIME BEHAVIOR TOTAL CONTROL CHARGE

60 3000
L=~loJ
/
/
TJ = 25°C 2000 _ TJ=25°C
50 fJF=5 - ~=IO V
I~IOoo -I.
/
\
\ ~ 700 /'
\ ~ 500 V
/'
'\.. ~
8 LV'
r--. I,and!, ,/' 300
~ .........V ~ .,........, . /
&200
20 10 20 30 50 - 70 100 200 300 100 1.0 2.0 - 3.0 5.0 - 7.0 10 20 30

Ie. COLLECTOR CURRENT ImAl I•• BASE CURRENT (mAl
BASE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGES versus BASE CURRENT versus COI:LECTOR CURRENT
-1.0 -0.8
'- T~ =125° J I
~=IO I
-0.8 ji!-0.7 - I,
~ \ TJ = 25°C
~
~
~-O.& \ ~
!:j-O.6 II
g
~ \ \ I
!'S
\ ~ V
~-0.4 "- ...... Ie = -2OOmA r- ~-O. 5
8. ~ r--...
I~ lOOmA- J
:P
-0.2
" r-....
Tiiit
-0.4
-
le=-lOmA
1/
o IIII
-0.1 -0.2 -0.5 0.7 1.0 2.0 -5.0 7.0 10 20 50 30 50 70 100 300
I•• BASE CURRENT ImAll Ie. COllECTOR CURRENT ImAl
2-649
2N3883 (continued)
TEMPERATURE COEFFICIENTS NORMALIZED CURRENT GAIN CHARACTERISTICS
+2.0 2.0
Ie
I- T = 10 t-- -
1+25'~ TO +l~'C)
f-" T5:
'1 Ve,= -I VOLT f.-
I--'" I---"
8vc for Vet'Nt)
TJ=+25'C f"o;; f-
( 55'1 TO +25'C)
- .....
.......
-8vo l.rV", ...)

(+25'C TO +lOO'C)
-
( 55'C TO +25'C) _ V
....... 1---"
~ ..... TJ=-55'C
./
-3.0 0.1 10
-50 -100 -150 -200 -250 -300 20 30 50 70 -100 200 300
Ie. COllECTOR CURRENT (mAl, Ie, COllECTOR CURRENT (111M
LEAKAGE CHARACTERISTICS COMMON EMITTER JUNCTION CAPACITANCE versus REVERSE VOLTAGE
300 5
J T.' +85'~
200 L J. ...... :--,
Vet = -15V Clio
10 .......
1 100 I ..........
.....
r--..
I
£l
'/y
TIllESHOlD
-:-- TJ +55'C ~
\'OlTAIlE - ~ r-...
I 50
.1
.... ~ CImIt. I... is defined as base ,.--
lea"".
current with both juncti.......rse r---
biased. Ie is always less than III for VOl > \
C.. -
............
f-
i 30 J '/yo !VOl is off condition base bias, V, is base I - -
~
20
J
valllp at ~resllold lof conduction.l I--
" :\
TJ=+25'C '.
10 I I I
-0.25 0.5 1.0 1.5 2.0 20.4 0.5 0.7 1.0 2.0 5.0 7.0 10 20
Voo. BASE·EMmER RMRSl BIAS MllTSl REVERSE BIAS !VOLTSl
2N3896 thru2N38 99 (SILICON)

2-650
2N3902 NPN (SILICON)
2N5157
3.5 AMPERE
POWER TRANSISTORS
HIGH VOLTAGE NPN SILICON TRANSISTORS NPN SILICON
. designed for use in high·voltage inverters, converters, switching 400 and 500 VOLTS
regulators and line operated amplifiers. 100 WATTS
• High Collector· Emitter Voltage - VCEX = 700 Vdc

• Excellent DC Current Gain -
hFE = 10 (Min) @ IC = 2.5 Adc
• Low Coliector·Emitter Saturation Voltage -
VCE(sat) = 0.8 Vdc (Max).@ IC = 1.0 Adc
*MAXIMUM RATINGS
Rating Symbol 2N3902 I 2N5157 Unit
Collector-Emitter Voltage VCEO 400 I 500 Vdc
Collector-Emitter Voltage VCEX 700 Vdc
Emitter-Base Voltage VEe 5.0 I 6.0 Vdc
Base Current IS 2.0 Adc
Total Device Dissipation @ T C = 75°C PD 100 Watts
Q,1
I
~,~.:~.~
Thermal Resistance, Junction to Case 8JC
J 0.75 °C/W
·Indicates JEDEC Registered Data

0.135
MAX
I
t ~!~1
OIA
0.250
0.300
.I...-- .
FIGURE 1-POWER DERATING
100
t
"
.
;:;; 80
t-
t-
lO
z
0
60
'""'- "
>=
~
ill
i5 40
" "'-
<r
"'
s:
~ 20 '" "
~
" To convert inches to millimeters multiplv by 25.4
60 80 100 120
TC, CASE TEMPERATURE IOC)

140
'" 160
All JEOEC dimensions and notes applV
CASE 11
TO·3
2-651
"ELECTRICAL CHARACTERISTICS IT C " 25°C unless otherwise noted)

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage VCEO(,u,) Vdc
(lC == 100 mAde, IS =: 0) (See Figure 12) 2N3902 325 -
2N5157 400 -
Collector-Emitter Breakdown Voitage BVCER 500 - Vdc
(Ie'" 3.5 Adc, RBE '" 10 Ohms) (See Figure 12) 2N5157
Collector Cutoff Current ICED mAde
(VCE "400 Vdc, IB" 0) 2N3902 0.25 -
(VCE "500 Vdc, IB" 0) 2N5157 0.25 -

(VCE " 700 Vdc, VEB(off) = 1.5 Vdcl 2N3902 - 2.5
2N5157 - 0.5
(VCE" 400 Vdc, VEB(off) = 1.5 Vdc, TC = 125°C) Both Types - 0.5
(VBE = 5.0 Vdc, I C = 0) 2N3902 - 5.0
(VBE ·6.0 Vdc, IC = 0). 2N5157 - 5.0
ON CHARACTERISTlCS(l)
(IC = 1.0 Adc, VCE = 5.0 Vdcl 2N3902,2N5157 30 90
(IC = 2.5 Adc, VCE = 5.0 Vdc) 2N3902,2N5157 10 -
(Ie'" 1.0 Adc, VeE:= 5.0 Vdc, TC:= -55°C) 2N5157 10 .-

II C = 1.0 Adc, I B = 0.1 Adcl 2N3902,2N5157 - 0.8
(IC" 2.5 Ado, IB = 0.5 Adcl 2N3902 - 2.5
IIc = 3.5 Adc, IB" 0.7 Adc) 2N5157 - 2.5
IIC" 1.0 Adc, IB = 0.1 Adc) 2N3902,2N5157 - 1.5
IIC" 2.5 Adc, IB = 0.5 Adc) 2N3902 - 2.0
IIc = 3.5 Adc, IS = 0.7 Adcl 2N5157 - 2.0
Current-Gain -Bandwidth Product IT MH,
(IC = 0.2 Adc, VCE" 10 Vdcl 2N3902 2.8 -
(IC = 0.2 Adc, VCE" 12 Vdcl 2N5157 2.8 --
(VCB" 20 Vdc, IE = 0, I = 1.0 MH,I 2N5157
--'-----.
Turn-On Time ton - 0.8
(VCC = 125 Vdc, IC =1.0 Adc, ISl =0.1 Adcl 2N5157 "'
Turn-Off Time - 1.7
(Vee::: 125 Vdc, Ie::: 1.0 Adc, 181 := 0.1 Adc, 182:= 0.5 Adcl 2N5157
toft
"'
*Indlcates JEDEC Registered Data
(1 )Pulse Test: Pulse WidthS 300 j.1s, Duty Cycle!:: 2.0%.
FIGURE 2-SWITCHING TIMES TEST CIRCUIT FIGURE 3 - TURN-ON TIME

1.0
'--t~
I"--L-,
iBl"IOOmA
"'500 rnA
~r@ 0CCI~ \15 JdC ICIIB~lO
- -
__ L_ --.. f-31-- -T-V~B--
50,us IB2"'RB'-~""500rnA}
1.0
i' 'r-..,. I
TJ"'25 0C
______ ~ _____ 1_ o. 7
INPUT CU RRENT WAVEFORM ] 0.5
w
"
;::
0.3 /
'A ,
r-1td I@ IV~~("ff) ~ 5.0 Vdc "-
0.1 i'.
JL JJ
O. I
0.05
J I II 0.1 0.1 0.3 0.5
...........
1.0
r-
1.0 3.0 5.0
5.0% Duty Cycle
Ir'" 100 ns "For 2N3902 - change VBB to 5.0 V. IC, COLLECTOR CURRENT (AMPI
2-652
\.
"
~ ")..
-c"S: ~
~5
.--r 0.1
'JC(') rI') BJC
0
OJC = OJ50CIW Max =f-

-'\."' -\.. 0.1
0.05
o CURVES APPLY FOR POWERf::
PULSETRAIN SHOWN
REAOTIMEATl1
I-
I- pFJ1JL
t~j
0.01
TJ(pk)- Te = P(pk) 'Jet') f::
\. 0.01 I-
SINGLE PULSE
I I I I I I IIII I
DUTY CYCLE, D = 111'1
0.01 II III I
om OOJ 0.05 0.1 0.1 0.3 0.5 1.0 1.0 3.0 5.0 10 20 30 50 100 100 300 500 1000 2000
1, TIME !msl
FIGURE 5 -ACTIVE-REGION SAFE-OPERATING AREA

0
5.0 TJ 150°C
c::
I
- - , "-
c-
'"
~ 2.0
J .. m~ ~Ims
f- There are two limitations on the power handling ability of a
i
B
1.0
I
- - - Second Breakdown Limit
.. . - ... =- Bonding Wire limit _ '"
~
[\.1.0 transistor: junction temperature and secondary breakdown. Safe
operating area curves indicate Ie-VeE fimits of the transistor that
must be observed for reliable operation; I.e., the transistor must not
0.5 - - - - - - Thermal Limil@Tc=75 0 C ~ be subjected to greater dissipation than the curves indicate.
oc Curves Apply Below Rated BVCEO(sus) ms The data of Figure 5 is based on T J(pk) = 150°C; T C is variable
o
B 0.2 "- --I--
depending on conditions. Pulse curves are valid for duty cycles of
de ' \
0. 1 10% provided T J{pkl...s;; 150°C. At high case temperatures, thermal
'"~O.05 limitations will reduce the power that can be handled to values
lass than the 1imitations imposed by secondary breakdown. (See
AN-415)
0.02 1N3902 '
om 2N5i57 - ri-
5.0 10 20 50 100 200 500
VeE. CDLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 6 -' TURN-OFF TIME FIGURE 7 - CAPACITANCE
5. 0 3000
TJ 25 0e lellBI 10- - -
~+ III
'"- +---
2000
leliB = 2.0- - -
iJ =12~O~
--
C;b
--
2,0
1000
's ~
._-
L0 ~
f-----+
--
~ 500 -+-
;::: 300
5 ....... -f-- r-- :::--
~ - - - c--
tf@Vee=
"'125~
" ;3
200
"""':Ob
02
cS 100 1----=--
...... r--
0. 1
I ./
f---- f--
50 1--'
0.05 30
0,05 0.1 02 0.5 1.0 2.0 5.0 1.0 2.0 3.0 5.0 10 20 30 50 100
Ie, eOLLECTOR eu RRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)
2--653
FIGURE B - DC CURRENT GAIN FIGURE 9 -"ON" VOLTAGES
100 2. 0
0 TJ=1500C TJ = 25°C
I'
1. 6
z
;;:
50
i,...--"'"
""-....
'\
~ VCE = 5.0 Vdc
~o
.JVCE("t@IC/IB= 10
1":""'1 I II
I
'" 0 1. 2
I-
t5 ./
,.... 25°C
-I I~
~
w
VBE(sat) @IC/IB= 10
~'- I.---
~ 20 '" V J
=> ....... ~ ~ o.8
'-'
"''' o
J 1/
~
'-' >
.........- V
,.... -55°C
" :> 1.1
~ 10
0.4
TJ 150°C ",1\'1 I.?- ~
7. 0
5.0 o
VICE(Sr tl i ly/18 ~ 5
I
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
IC, COLLECTOR. CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
FIGURE 10 - COLLECTOR CUT-OFF REGION FIGURE II-TEMPERATURE COEFFICIENTS
1000 +2.5
500 ==TJ 150°C ~ +2.0
V ~ +1.5
1 200 -
- :=125~C I-
i:5 +1.0
~ 100 U TJ = -650C to 1500C
'"=>'-'
'"
0
50
20
== i=1000C
~ +0.5
8
w
I I lJlJ.---
8V FOR VCE(sat)'ff
f.-
~
- -75°C ~ -0.5
APPLIES FOR IcllB <hFE/4
10 I-
V
8
ffi -1.0 .......
5.0
;! ~ -1.5 8V FiR V18E1_
REVERSE FORWARD I- J.-- :,.;-
2.0 f - - -25~C VCE 200 Vdc- ~ -2.0
1.0 -2.5 I
-0.4 -0.2 +0.2 +0.4 +0.6 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
VBE, BASE EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP)
FIGURE 12-COLLECTOR-EMITTER SUSTAINING VOLTAGE TESTCIRCUITSAND LOAD LINES
500 TEST#1 4.0

k_ --II
;;: 400
..s
I-
f-- f-- VIERI)s
WHEN IVCEt5~0 V@IC=3.5A
JcJr-:L1Z
f--
~ 300
J\.lBLov
=> I
-:
'-' 0
'"
0 2~5;I7 ~~IY
~
200 VCEO(s"s) IS ACCEPTABLE WHEN l - - ~
I- VCE;> RATED vr i
T GE @IC=100mA
"""
0
'-' 1.0 0
I
;! 100
2N3902- I
y
,
I
III---~---o
2N5157
o I
500 TEST #2 For 2N5157 Only o L.-
o 100 200 300 400
VBB = 0 VBB o 100 200 300 400 500
RB = 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
RC = 15
L = 10 mH
2-654
2N3903 (SILICON)
2N3904
NPN silicon annular transistors, designed for gen-

eral - purpose switching and amplifier applications,
features one-piece, injection-molded plastic package
for high reliabilitv. The 2N3903 and 2N3904 are com-
plementary with PNP types 2N3905 and 2N3906, re-
(TO-92) spectively .
MAXIMUM RATINGS

Temperature Range
Thermal Resistance, Junction to 9JA 0.357 °C/mW
Ambierit
2-655
I Characteristic Fig. No. Symbol Min Max Unit

OFF CHARACTERISTICS
Uc • 10 /lAde, IE • 0) 60
Collector-Emitter Breakdown Voltage. BVCEO• Vde
Uc·I.0mAde,10 '0) 40
Emitter-Base 8reakdawn Voltage BVEBO Vde
(~ • 10 1IAdc, IC • 0) 6.0 -
Collector Cucoff Current nAde
IeEX
(VCE =30 Vek:, VEO(off) =3.0 Vek:) ~O
Base Cutoff Current 10L nAdc

(VCE • SO Vde, VEO(off) • 3.0 Vde) - 50
ON CHARACTERISTICS
DC Current Gain.
(Ie = 0.1 mAde, VCE • 1.0 Vde) 2N3903
IS hFE
. 20
-
3N3904 40
35'
-
(Ie • 1. 0 mAde, VCE • 1.0 Vde) 2N3903
2N3904 70
(lC = 10 mAde, VCE = 1.0 Vde) 2N3903 50 ISO
2N3904 100 300
Uc ·50 mAde, VCE = 1.0 Vde) 2N3903
2NS904
SO
60
-
(Ie = 100 mAde, VCE = 1.0 Vde) 2N3903 15
2N3904 30 -
Collector-Emitter Saturation Voltage. 16, 17 Vde
Uc =10 mAde, 1a • 1.0 mAde)
VCE(sat)·
- 0.2
(Ie = 50 mAde, 10 ·5.0 mAde) - 0.3
Base-Emitter Saturation Voltage- 17 VSE(sat)· Vek:
(Ie • 10 mAde, 10 = I. 0 mAde) 0.65 0.85
(Ie • 50 mAde, 1a • 5.0 mAde) - 0.95
Current-Gain-Ba.ncMtdth Product
(Ie • 10 mAde, VCE ·30 Vde, f · 100 MHz) 2N3903
!.r 250 -
MHz
2N3904 300
Capacitance
Outp.1t 3 COb pF
(VCO ' ~.O Vde, ~ = 0, f = 100kHz) 4.0
Input Capacitance 3 pF
(VOE' O.~ Vde, IC .0, f · 100 kHz)
C'b
- 8.0
Inpu.t Impedance 13 h,. k ohms
(IC = 1.0 mAde, VCE = 10 Vde, f =1.0 kHz) 2N3903 O.~ 8.0
2N3904 1.0 10
Voltage Feedback Ratto 14 hr. X 10-4
(Ie • 1.0 mAde, VCE ·IOVdc, f = 1.0 kHz) 2N3903 0.1 5.0
2N3904 0.5 8.0
Small-Signal Current Gain 11
(Ie = 1.0mAek:, VCE ' 10Vde, f= 1.0 kHz) 2N3903
'1. 50 200
OutPlt Admittance
=
(lC 1.0 mAde, VCE • 10 Vde, f = 1.0 kHz)
2N3904
12 hoe
100
1.0
400
40
...,-
Noise Figure 9, 10 NF dO
(lc • 100 /lAde, VCE =~.O Vde, HS • 1.0 k ohms, 2N3903 -- 6.0
1·10 Hz '0 1~. 7 kHz)
2N3904 5.0
Delay Time (VCC ' 3.0 Vde, VOE(offi = 0.5 Vde, I, ~
~, - 35 ns
Rise Time IC • 10 mAde, 101 ' 1.0 mAde)
I, 5, 6
'<- - 3~ .s
Storage Time
(VCC =3.0Vek:, IC = 10mAde,
2NS903
2N3904
2, 7
'. -
175
200
.s
Fall Time 101 .102 = 1.0 mAde)

2, 8 t - 50 n.
• Pulse Test: Pulse Width .. 300",., Duty Cycle =2.0%.
FIGURE 1- DELAY AND RISE TIME EQUIVALENT TEST CIRCUIT FIGURE 2 - STORAGE AND FALL TIME EQUIVALENT TEST CIRCUIT
300ns~ I+- 10<1, < SOO!LS~ I, ~+109V
oon~-~:E
DUTY CYCLE = 2%ff+lo.6 V
-O.SV
< 1.0ns C IN916
9.1 V -I I- < to ns
"Total shunt capacitance of test jig and connectors
2-656
- T J = 25°C ·--TJ = 125°C
FIGURE 3 - CAPACITANCE FIGURE 4 - CHARGE DATA

10 5000
Ve~~140V
300o -Iell,~ 10
7. 0
2000 -< -
p
5. 0 ~ C-
f- 100O
~ 700
r- COb
0
.........
......... r--,..... ~ 500 >e:: L
d 300 ~ V V
Co. ...............
V /
-- - -
2. 0 200
aT
-
~
.........
10 0':::-
I-
t-
70 a.
1. o 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 [0 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTSI Ie, COLLECTOR CURRENT ImAl
FIGURE 5 - TURN·ON TIME FIGURE 6 - RISE TIME

500 500
"
30o ."" I'-
"- I'..
lell,~ 10
300
~
~~
Vcc~40V
lell,~ 10
200 200 ~
r-"
100 " ""['." 100
~
0 - 70
~
0 >= 50
~.."
w
L" t,@Vee 3.0~
"
~
1'),
0 k" 40 V iX 30
.-
~ ....
.5
[5~
0
i"- ,..... Ie'" ~ 0
~
r"
0 0
7. 0 !..@Vo , 0
.ov
5. 0 5. 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 [00 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT (mAl Ie, COLLECTOR CURRENT (mAl

500
f--+-+--+-++-t+t+t--+-+--Ic-i-t- 1', ~ t, - % tf- _"I;,'~I,,' -
300 I, "I 1 I" ~ I" - 300 ~ ~ Vcc~40y_
~
200 lell, 10" II I 200 f-- - ~~~~
p===tJ;;'::\:"ftit"
c.
;s
:: F-!=:= ;;;F:FH++t--=-+-= 20
"" ... Ie/I, - 20
~
100~I~~!f:iiig~~~!ij~~~,----~
~'ii 70~
f-+-+--+-+-+-f++++--+-+--t--+-=lei-II't-t--2t10+~_t-'~'f<l ~
100
le/ 18 20
;:;
50
~+-+--+-+-+-f++++--+-+--t--+-++-- lell, ~ [~d.: ::l
50
'!o..' ...
lell.~ 10 ...
~ 30~+-+--+-+-+-f++++--+I-+--tI--+-+-r+~-+--4 ~ ~'
30
~ ... ...... - --
-
lell,~ 10
,.: 20f-++--+++-+++++--+-+--i--++++++t-H 20 p-
--
1O~~~m
10
50EE 5. 0
1.0 2.0 3.0 5.0 7.0 [0 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT (mAl Ie, COLLECTOR CURRENT ImAI
2-657

FIGURE 9 VCE = 5.0 Vdc;, TA = 25·C FIGURE 10
12 14
I I II I r-f= 1.0 kHz I 1LJI
o \ I II. I 12 1~~.OmA LlLlil L J
'\ 0-- SOURCE RESISTANCE = 200 n . / A'e=10•5IJ / /
I-- K-Ie= 1.0mA I /i
10
/ I L
\ I / / ' 1e=50pA
'\. '\. I 1/ /le=loopA..t:
II i',. I' SOURCE RESISTANCE = 200 n ~ i.-" L lL
-
~
17'" ""'"
i'-. 'f..
t:-
Ie = 0.5mA
:t-I-o-
~ ~
"l , /
V
./
L
-.....
~ L SOURCE RESISTANCE 500 n
f-- Ie = 100 pA
SOURCE RESISTANCE = 1.0 k I
o Ie = 50pA I o
0.1 0.2 0.4 4 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f. FREQUENCYIkHzl h PARAMETERS R50 SOURCE RESISTANCElkohmsl
(VCE = 10 Vdc,f =
1.0 kHz, TA = 25·C)
300 100
200 50
I- ~
~ l- 1
iii
20
./
V
~ ~
ii 10
51
oV
15.0
50 .J
2.0
30 1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
Ie. COUECTOR CURRENT (mAl Ie. COlLECTOR CURRENT (mAJ
FIGURE 13 -INPUT IMPEDANCE FIGURE 14 - VOLTAGE FEEDBACK RATIO

20 ....... 10
~
f'.... 7.0
t 5.0
!S
"\.
~
i'" 3.0 "\

" 'r--., ....... ;\
"-
~ 2.0
r-.... ~
:!!i
~
.J 1.0 ......... 1-0- VV
0.5
0.7
0.2 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
Ie. COLLECTOR CURRENT (mAl Ie. COUECTOR CURRENT (mAl
2-658
STATIC CHARACTERISTICS
FIGURE 15 - NORMALIZED CURRENT GAIN

2.0
~ J125 J
I I
TJ 0
Ve,=1.0V
tt:~ r--- r---~ I
z: 1.0
~ b
~ 0.7
-
I--" .....,
B 0.5 ~ TJ = -55°C ~
~
~~
z:
0.3
I--
j......-
I-- ~ - ...- ........
t--"
r--.... .....
I'
i"
i 0.2 .~
"\t\.
O. I
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0
10 20 30 50 70 100 "'"l\ 200

I. 0
TJ ~ 25°C
le=1.0mA Ie ~ 10mA le~30mA [lIe ~ 100mA
6 1
\
4 f'...
"- l"'--
[\. f'..... t'-

2 .........
r-- t-- I -
0
.01 .02 .03 .05 .07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I,. BASE CURRENT ImAI

1.2 r--,-...,..--,.-r--T'"T"T"TTT"---r-r---r--"1--r-'T"T">,.,.---,--, 1.0
+-+-++H++-++---+-IIH-I+++III++-IIH 111111
Hi
TJ 1= i5°C
1.0 I--I-+-+--++f+ttt-+-+V';'wt~ + ~~ O. 5
~.,.-+-+-
~IJ5O~-
111 IT j
...f1J.Hf t- /!ve for Ve" ...)
I II I
~ 0.81-t-t-t-t-t+t-ttt-_uHr-Q""v,l",@ft¥-he,HI.H
OV p 0
r-t- ~ 55°C TO +25°C
~ ~
....
li 06I-H-++H-t+++--++++++H+I--+-I ffi -0.5 LllIJ: t::
~ '~~-+++~~+4-+-H4+~~) I III
~ 0.4 ~+-+--+-+-I-+++++---+-+--+-++++1-+-h1/<-+-I ~U_l. 0
-55°C TO +25°C
..... r-
~1-+-+-H+t14t Ve"wtl@lell,= 10
0.2I-H-++H-t+++--+++±;.joI!!-H+I--+-I
I--r-
-I.
1' ..... +rn+1 2Soc
i.--i--" 51. /!vI for VIE'wtl I III

O.~~~~WW~~~~~~~~
1.0 2.0 5.0 10 20 50 100 200
-2. oto ~ ~ ro ~ ~ m
1111
~ ~ ~ ~
2-659
2N3905 (SILICON)
2N3906
PNP silicon annular transistors, designed for gen-

eral purpose switching and amplifier applications,
features one-piece, injection-molded plastic package
CASE 29(1) for high reliability. The 2N3905 and 2N3906 are com-
(10-92) plementary with NPN types 2N3903 and 2N3904 re-
spectively . '
MAXIMUM RATINGS

Total Device Dissipation @ TA = 25°C Pn 350 mW

Temperature Range
Thermal Resistance, Junction to 8JA 0.357 °C/mW
Ambient
2-660
2N3.05, 2N3906 (continued)
ELECTRICAL CHARACTERISTICS (Tc = 25°C unle .. otherwise notedl

Characteristic fill. No. Symbol Min Max Unit
OFF CHARACTERISTICS
(IC = 10 jJAdc, IE = 0) 40 -
Collector-Emitter Breakdown Voltage t, I BVCEO Vde
(IC = 1.0 mAde, 's = 0) 40 -
(~ = 10 IIAde, Ie = 0) 5.0 -
Collector Cutoff Current ICEX nAdc
(VCE = 30 Vde, VBEtoff) = 3.0 Vde) - 50
Base Cuto« Current nAdc

(VCE = 30 Vde, VBE(off)' 3.0 Vde)
'sL
- 50
ON CHARACTERISTICS
IX: Current Gain' ( 11 lyE -
--
(lC = 0.1 mAde, VCE = 1.0 Vde) 2N3905 15 30
2N3906 60
(Ie =1.0 mAde, VCE = 1.0 Vde) 2N3905
2N3906
40
80
-
(IC = 10 mAde, VCE = 1.0 Vde) 2N3905 50 150
2N3906 100 300
(Ie = 50 mAde, VCE = 1.0 Vde) 2N3905 30
60
2N3906
(IC = 100 mAde, VCE = 1. 0 Vde) 2N3905
2N3906
15
30
--
Collector-Emitter Saturation Voltage' 111 18, 17 VcIc
(lC = 10 mAde, IB = 1.0 mAde)
VCE(s.')
- 0.25
(IC = 50 mAcIc, IB = 5.0 mAde) - 0.4
Bue-Emitter Saturation Voltage (11 17 VBE(oat)

veic
(Ie = 10 mAde, IB = 1.0 mAde) 0.85 0.85
<Ie = 50 mAde, IB = 5. 0 mAde) - 0.95
(lc = 10 mAde, VCE = 20 VcIc, 1= 100 MHz) 2N3905
IN3908
200
250
--
Output Capacitance 3 COb pt
(V CB = 5.0 VcIc, 1z = 0, f = 100 kHz) - 4.5
Input Capacitance 3 C lb pF
(V BE = 0.5 Vde, IC = 0, I = 100 kHz) - 10
Input Impedance 13 hie kohms

(Ie = 1.0 mAde, VCE = 10VcIc, 1= 1. 0 kHz) 2N3905 0.5
2.0
8.0
12
2N3906
Voltage Feedback Ratio \4 hre X 10-'
(Ic = 1.0 mAde, VCE = 10 VcIc, f = 1. 0 kHz) 2N3905 0.1 5.0
2N39J)8 1.0 10
(Ie = 1.0mAcIc, VCE = 10Vd<, 1= 1.0 kHz) 2N3905
11 ~e 50 200
-
2N3906 100 400
OUtput Admittance 12 hoe jlmhos
(Ie= 1.0 mAde, VCE = 10Vde, f = 1.0 kHz) 2N3905 1.0
3.0
40
80
2N3906
Not,e Figure 9, 10 NF dB
(IC = 100 jJAdc, VCE = 5.0 Vde, Rg = 1.0k ohm, 2N3905
2N3906
-- 5.0
4.0
f = 10 Hz to 15.7 kHz)
Delay Time (VCC = 3.0 VcIc, VBE(off) = 0.5 Vde, I, 5 'd - 35 ...
RiBeTime
Starap: Time
Ie = 10 mAde,
(VCC ·3.0 Vde,
'sz
IBI • 1.0 mAde)
Ie
= 10 mAcIc,
2N3905
2N3908
I, 5, 8
2, 7
'r
'.
-
--
35
200
225
....
no
Fall Time IBI • = 1.0 mAde) 2N3905

2N3908
2, 8 1r -- 80
75
(1) PIli.. Te.': PIIlse Width =300,.., Duty Cycle =2.0%.
FlaURE 1- DELAY AND RISE TIME EQUIVALENT TEST CIRCUIT FlaURE 2- STOIA8E AND FALL TIME EQUIVALENT TEST CIICUIT
+~.1V--lJ-<l.Ons 10k
~
<I.ons
+o.s:v_u.
-10.6 V~ ... 300 ns
o
IN916
10 < I, < 500 '" -' ....... -Io.n
DUTY CYCLE = 2% DUTY CYCLE = 2%""'" I, r-
*Total shunt capacitance of test iii and CORnectors
2-661
- T J = 2S"C --- T J = 12S"C
FIGURE 3 - CAPACITANCE FIGURE 4 - CHARGE DATA

10 5000
I- I~/I. ~~ 10 I
7. 3000 I- Vee=40V
0t-.
2000 .--
5.0
r--r-..;r--
~ 1000
C,• I""" ~r- g 700
III
0 i<..> SOO
V
0
d 300
- -- I--.... Q.,
200
100
,.- -- . /
70
I.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 U 10 20 50 ~ 200
REVERSE BIAS !VOlTSJ Ie. COLLECTOR CURRENT (mAl
FIGURE 5 - TURN·ON TIME FIGURE 6 - RISE TIME

500 500
Vee = 40~
I"- lell, = 10
300 ~~ I'\.. 300 le/l.=IO
~ I"-
'"'"
200 200
~
"- ~~ ~
100 100
70 J 70
...,.
!
!
50
30 I"
, t.@Vcc 3.0 V 57' F- ~ 50
;:::
~ 30 ~
20 ~
I~ 10£ .s
0 ....
.>li I!J> -?
r--. ..... ......
10 0
7. 0 l,,@Vo• 0 7.0
OV
5.0 5.0
1.0 2.0 3.0 5.0 10 20 30 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie. COllECTOR CURRENT (mAl Ie. COLLECTOR CURRENT (mAl
,
500 500
·1·.~'t-~4 - I' 1.,=1" -
300 le~\!'S: F- ~
:::
In=l ul- 300
" "- ~ Vcc=40V _
200
,....-
- ..... ·\~II. ~IIO
200
~. lell.=20
~ 100
/cll. 10 I
100
I'
iii 70 ~ ;t'" lell. 20
::; 50 , ! 50 lell." 10
I g le)l~ 16 """ ....

0 /cll, = 20
~ 4 30
~
.
..: 20 20
" ~
--_ .....
10 10
5.0 5.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 100 200
/C. COLLECTOR CURRENT ImAl Ie. COllECTOR CURRENT !mAl
2-662
2N390S, 2N3906 (continued)

VCE = 5.0 Vdc. TA = 25"C
FIGURE 9 FIGURE 10
12
_f~ll.0kHZ 1/
-'-
10 Ic 1.0 mA 'rI I II
Ilc ~ 100 pl.']
~ 8.0
V V
I
_ 6.0 \. J IL / k"
I / IL IL V
~ 4, o\.. "\. / ' ./ / /'
""- r--.,. ~ / Ic ~0.5mA V./ I' Ic~50pI.
1.0 b:.. po ~
2.0
'"
o~~--~~~~--~~~~--~~~ 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f. FREQUENCY 1kHz) Ro. SOURCE RESISTANCE Ik ohms)
h PARAMETERS
(VCE = 10 Vdc. f = 1.0 kHz. TA = 25"C)
FIGURE 11 - CURRENT GAIN 100 FIGURE 12 - OUTPUT ADMITTANCE
300
70
200~4-+--+~~HHH+--~~4-4-++++~
/
V
/
/
./
....
7.0
5.0
0.1 0.2 0.5 1.0 2.0 5.0 10
Ic. COllECTOR CURRENT!mA) Ic. COllECTOR CURRENT (mA)
FIGUII£ 13 -INPUT IMPEDANCE FIGURE 14 - VOLTAGE FEEDBACK RATIO

20 10
"-
"
10 7.0
i"" 5.0 ~ 5.0

"'
IS
2 "'
III 2.0 " " "- i 3.0
~
~ 2.0
i-.1.0 "-
6E
0.5
" ~1 1.0
....... r- V'"
o. 7
0.2 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
Ic. COllECTOR CURRENT (mA) Ic. COllECTOR CURRENT!mA)
2-663
2N3905, 2N3.06 (continued)
STATIC CHARACTERISTICS
FIGURE 15 - NORMALIZED CURRENT GAIN
-
2.0
TJ I +12~OC I
VeE
I
\.0 V
1.0 TJ I +2~lc 1"--
I~
<..)
O.
O. 5
7
TJ I 550C
........... ~
~
~ ~['I:
I 0.3
i 0.2
~
~
O. I
'\
~
0.1 0.2 0.3 0.5 0.7 \.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
'c. COLLECTOR CURRENT lmAl
FlGutll 16 - CtLLECTOR SATURATI8N REGIGN
,
I.0
\ 1 }J ~ 2~o~
!S o.8
~ le= j.OmA le=IOmA 1\ 'e=30mA le= lOOmA
~ ,\
t o.6
;
:!5 0.4
"'
1"- 1\
;,.. i'..
'"
l'l 0.2
o
\
to-
i'--..
r- I-- - t- I---
I--
.01 .02 .03 .05 .07 0.1 0.2 0.3 0.5 0.7 \.0 2.0 3.0 5.0 7.0 10
I,. BASE CURRENT lmAl

.0 1.0
TJ - 25°C V"IM~I @lell, = 10~ I
V
.I~ O.5
1
.8 ~f... Vel"" +2S'CTO +1 ·C ~
V,,@VeE \.0 V

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THE

Identifier et ensuite choisir les dispositifs semicon- INDEX DU CATALOGUE

DEVICE PAGE DEVICE PAGE DEVICE PAGE

DEVICE PAGE DEVICE PAGE DEVICE PAGE

1 N 1804 lN2490 lN2973

DEVICE PAGE DEVICE PAGE DEVICE PAGE

DEVICE PAGE DEVICE PAGE DEVICE PAGE

1N4906,A 2N458A 2-36 2N834 2-105

1N4916,A 2N508 2-17 2N915 2-119

DEVICE PAGE DEVICE PAGE DEVICE PAGE

DEVICE PAGE DEVICE PAGE DEVICE PAGE

2N2635 2-320 2N2976 2N3293

DEVICE PAGE DEVICE PAGE DEVICE PAGE

PEVICE PAGE DEVICE PAGE DEVICE PAGE

Medium current silicon rectifiers. Unique double-

Rating Symbol Value Unit

Average l/2-Wave Rectified Forward Current 10 Amp

Peak Repetitive Forward Current IFM (rep) Amp

Maximum Operating and Storage Temperature: -65 to + 190°C

Cbara,cteristics Symbol, Max Unit

MAXIMUM AVERAGE FORWARD CURRENT RATING

MAXIMUM RATINGS ITA = 25 0 C unless otherwise noted)

Rating Symbol Value Unit

Operating Junction Temperature Range TJ -55 to +175 °c

TABLE 1 - ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

lN4057 41-8 12.4 10 25 0.005 0.047 0.050 1.5

"Derate linearly from 25°C to 175°C.

Max Voltage Change

1 N429 (j) 6.2 0.050 20 0.01 200 53 1

lNl735 6.2 0.050 20 0.01 200 41-6 2

1 N1530· '" 0.014 0.002

lNl736 0.100 0.01

lN1737 0.150 0.01

lN1740 0.300 0.01

lN1741 0.350 0.01

lN1742 @ 0.400 0.01

• Derate linearly from 25°C to 175°C CD Available to M I L-S-19500/299 Specifications .

OUTLINE DIMENSIONS IINCHES)

FIGURE 1 FIGURE 2 FIGURE 3

TEMPERATURE-COMPENSATED REFERENCE DIODES

FIGURE 4'- TYPICAL OPERATING CHARACTERISTICS

VZ, ZENER VOLTAGE (VOLTS)

Recommended for applications requiring an exact

1N746 thru 1N7 59 1N746A thru 1N759A (ZENER DIODES)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

MAXIMUM REVERSE LEAKAGE CURRENT

I N4370 2.4 20 30 1,0 100 200

IN75> 7.' 20 6 ,0 0.1 20

SPECIAL.se'LECTIONS.AVAILA8LE INCLUDE.: (See Selector Guide for details)

EXAMPLE: IN746 series, IN4370 series

lN761 thru lN769 Recommended for applications reqUlrmg an exact

.. high·conductance silicon diodes designed as a stable forward

• Guaranteed Forward Voltage Range

Rating Symbol Value Unit

DC Power Dissipation Po 400 mW

Case: Choice of package, either Glass or Surmetic

ELECTRICAL CHARACTERISTICS (TA = 25 0 C unless otherwise noted)

Forward Reference Reverse Leakage

*Indicates JEDEC Registered Data for lN816

TYPICAL FORWARD VOLTAGE CHARACTERISTICS

FIGURE 1 - .4M.64FR10/1N816 FIGURE 2 - .4Ml.36FRS

VF. FORWARD VOLTAGE (VOLTS) VF. FORWARD VOLTAGE (VOLTS)

FIGURE 3 - .4M2.04FRS FIGURE 4 - MZ2360