Data Sheet

4V Drive Nch MOSFET

RSD050N06

Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET CPT3
6.5
(SC-63) 5.1
<SOT-428> 2.3
0.5

1.5
Features
1) Low on-resistance.

5.5

9.5
1.5
2) Fast switching speed.

0.9

2.5
0.75
3) Drive circuits can be simple.

0.8Min.
0.65

3) Parallel use is easy.

0.9 2.3
(1) (2) (3) 2.3 0.5
1.0

Applications
Switching

Packaging specifications  Inner circuit

Package CPT3 ∗1
Type Code TL
Basic ordering unit (pieces) 2500
(1) Gate ∗2
(2) Drain
(3) Source

Absolute maximum ratings (Ta=25°C) 1 ESD Protection Diode

(1) (2) (3)
2 Body Diode
Parameter Symbol Limits Unit
Drain-source voltage VDSS 60 V
Gate-source voltage VGSS 20 V
Continuous ID 5.0 A
Drain current
Pulsed IDP *1 15 A
Source current Continuous IS 5.0 A
(Body Diode) Pulsed ISP *1 15 A
Power dissipation PD *2 15 W
Channel temperature Tch 150 °C
Range of storage temperature Tstg 55 to +150 °C
*1 Pw10s, Duty cycle1%
*2 Tc=25°C

Thermal resistance
Parameter Symbol Limits Unit
Channel to Case Rth (ch-c) * 8.33 °C / W
* T c=25C

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 RSD050N06 　 Data Sheet

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS - - 10 A VGS=20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 60 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS - - 1 A VDS=60V, VGS=0V
Gate threshold voltage VGS (th) 1.0 - 3.0 V VDS=10V, ID=1mA
- 78 109 ID=5.0A, VGS=10V
Static drain-source on-state *
RDS (on) - 94 131 m ID=5.0A, VGS=4.5V
resistance
- 100 140 ID=5.0A, VGS=4.0V
Forward transfer admittance l Yfs l* 3.5 - - S ID=5.0A, VDS=10V
Input capacitance Ciss - 290 - pF VDS=10V
Output capacitance Coss - 90 - pF VGS=0V
Reverse transfer capacitance Crss - 35 - pF f=1MHz
Turn-on delay time td(on) * - 8 - ns ID=2.5A, VDD 30V
Rise time tr * - 17 - ns VGS=10V
Turn-off delay time td(off) * - 26 - ns RL=12
Fall time tf * - 8 - ns RG=10
Total gate charge Qg * - 8.0 - nC VDD 30V
Gate-source charge Qgs * - 1.4 - nC ID=5.0A
Gate-drain charge Qgd * - 1.4 - nC VGS=10V
*Pulsed

Body diode characteristics (Source-Drain) (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward Voltage VSD * - - 1.2 V Is=5.0A, VGS=0V
*Pulsed

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 RSD050N06 　 Data Sheet

Electrical characteristic curves (Ta=25C)

Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ)

15.0 15.0
Ta=25°C Ta=25°C
pulsed pulsed
12.5 12.5
VGS=10.0V
VGS=10.0V
VGS=4.5V
Drain Current : ID [A]

10.0 VGS=4.5V 10.0

Drain Current : ID [A]

VGS=4.0V
VGS=4.0V
VGS=3.0V
7.5 7.5

VGS=3.5V

5.0 5.0

2.5 2.5
VGS=3.0V

0.0 0.0
0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10

Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

1000 1000

Ta=25°C VGS=10V
pulsed
pulsed
Static Drain-Source On-State Resistance

Static Drain-Source On-State Resistance

VGS=4.0V
100
VGS=4.5V
RDS(on) [mΩ]

RDS(on) [mΩ]

VGS=10V

100
Ta=125°C
Ta=75°C
Ta=25°C
10 Ta=-25°C

10 1
0.01 0.1 1 10 0.01 0.1 1 10

Drain Current : ID [A] Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

1000 1000
VGS=4.5V VGS=4.0V
pulsed pulsed
Static Drain-Source On-State Resistance

Static Drain-Source On-State Resistance

100 100
RDS(on) [mΩ]

RDS(on) [mΩ]

Ta=125°C
Ta=125°C Ta=75°C
Ta=75°C Ta=25°C
Ta=25°C Ta=-25°C
10 Ta=-25°C 10

1 1
0.01 0.1 1 10 0.01 0.1 1 10

Drain Current : ID [A] Drain Current : ID [A]

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 RSD050N06 　 Data Sheet

Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics

10 10
VDS=10V VDS=10V
pulsed pulsed
1
Forward Transfer Admittance

1 0.1 Ta=125°C

Drain Currnt : ID [A]

Ta=125°C
Ta=75°C Ta=75°C
Ta=25°C
Yfs [S]

Ta=25°C
Ta=-25°C 0.01 Ta=-25°C

0.1 0.001

0.0001

0.01 0.00001
0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Current : ID [A] Gate-Source Voltage : VGS [V]

Fif.9 Source Current vs. Source-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

10 1000
VGS=0V Ta=25°C
pulsed
pulsed
Static Drain-Source On-State Resistance

1 ID=2.5A
Ta=125°C
Ta=75°C
Source Current : Is [A]

Ta=25°C
0.1 Ta=-25°C
RDS(on) [mΩ]

500

0.01 ID=5.0A

0.001

0.0001 0
0.0 0.5 1.0 0 2 4 6 8 10 12 14 16 18 20

Source-Drain Voltage : VSD [V] Gate-Source Voltage : VGS [V]

Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics

1000 12
VDD≒30V Ta=25°C
VGS=10V VDD=30V
RG=10Ω 10 ID=5A
tf Ta=25°C Pulsed
Pulsed
Gate-Source Voltage : VGS [V]
Switching Time : t [ns]

100 8

td(off) 6

td(on)
10 4

2
tr

1 0
0.01 0.1 1 10 0 2 4 6 8 10

Drain Current : ID [A] Total Gate Charge : Qg [nC]

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 RSD050N06 　 Data Sheet

Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area

1000 100
Ta=25°C Operation in this area is limited by RDS(on)
f=1MHz （ VGS = 10V ）
VGS=0V

10

Drain Current : ID [ A ]
Capacitance : C [pF]

Ciss PW = 100μs

100 1

PW = 1ms
Coss
PW = 10ms
0.1
DC Operation

Tc=25°C
Crss Single Pulse
10 0.01
0.01 0.1 1 10 100 0.1 1 10 100

Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [ V ]

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

10
Tc=25°C
Normalized Transient Thermal Resistance : r（t）

Single Pulse

Rth(ch-a)=8.33°C/W
1 Rth(ch-a)(t)=r(t)×Rth(ch-a)

0.1

0.01

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse width : Pw (s)

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 RSD050N06 　 Data Sheet

 Measurement circuits

Pulse width
VGS ID
VDS 90%
50% 50%
RL VGS 10%
VDS
D.U.T. 10% 10%

RG VDD 90% 90%

td(on) tr td(off) tf

ton toff

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

VG
VGS ID
VDS
Qg
RL
VGS
IG(Const.) D.U.T.
Qgs Qgd
VDD

Charge

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

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 Notice

Notes

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R1120A