ST 2N5400 / 2N5401

www.DataSheet4U.com
PNP Silicon Epitaxial Planar Transistors
for general purpose, high voltage amplifier applications.

As complementary types the NPN transistors

ST 2N5550 and ST 2N5551 are recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25oC)

Symbol Value Unit

Collector Emitter Voltage ST 2N5400 -VCEO 120 V

ST 2N5401 -VCEO 150 V

Collector Base Voltage ST 2N5400 -VCBO 130 V

ST 2N5401 -VCBO 160 V

Emitter Base Voltage -VEBO 5 V

Collector Current -IC 600 mA

1)
Power Dissipation Ptot 625 mW
o
Junction Temperature Tj 150 C
o
Storage Temperature Range TS -55 to +150 C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002
ST 2N5400 / 2N5401

Characteristics at Tamb=25 oC www.DataSheet4U.com

Symbol Min. Typ. Max. Unit

DC Current Gain
at-VCE=5V, -IC=1mA ST 2N5400 hFE 30 - - -
ST 2N5401 hFE 50 - - -

at -VCE=5V, -IC=10mA ST 2N5400 hFE 40 - 180 -

ST 2N5401 hFE 60 - 240 -

at -VCE=5V, -IC=50mA ST 2N5400 hFE 40 - - -

ST 2N5401 hFE 50 - - -
Collector Emitter Breakdown Voltage
at -IC=1mA ST 2N5400 -V(BR)CEO 120 - - V
ST 2N5401 -V(BR)CEO 150 - - V
Collector Base Breakdown Voltage
at -IC=100μA ST 2N5400 -V(BR)CBO 130 - - V
ST 2N5401 -V(BR)CBO 160 - - V
Emitter Base Breakdown Voltage
at -IE=10μA -V(BR)EBO 5 - - V
Collector Cutoff Current
at -VCB=100V ST 2N5400 -ICBO - - 100 nA
at -VCB=120V ST 2N5401 -ICBO - - 50 nA
Emitter Cutoff Current
at -VEB=3V -IEBO - - 50 nA
Collector Saturation Voltage
at -IC=10mA, -IB=1mA -VCE sat - - 0.2 V
at -IC=50mA, -IB=5mA -VCE sat - - 0.5 V
Base Saturation Voltage
at -IC=10mA, -IB=1mA -VBEsat - - 1 V
at -IC=50mA, -IB=5mA -VBEsat - - 1 V
Gain Bandwidth Product
at -VCE=10V,-IC=10mA,f=100MHz ST 2N5400 fT 100 - 400 MHz
ST 2N5401 fT 100 - 400 MHz
Collector Base Capacitance
at -VCB=10V, f=1MHz CCBO - - 6 pF
Noise Figure
at -VCE=5V,-IC=200μA,RG=2kΩ,f=30HZ…15kHZ F - - 8 dB
1)
Thermal Resistance Junction to Ambient RthA - - 200 K/W
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002
ST 2N5400 / 2N5401

Ptot-Ta IC - VBE www.DataSheet4U.com

Power Dissipation Ptot (mW)

Collector Current Ic (mA)

Ambient Temperature Ta ( ℃ )
Base Emitter Voltage VBE (V)

fT - IC V CE(sat), V BE(sat) - I C

Base Emitter Saturation Voltage

Collector Emitter Saturation
Transition Frequency

VBE(sat)
V C E ( s a t ) , V B E ( s at ) ( m V )

VCE(sat)

C o l l e c t o r C u r r e n t IC ( m A ) C o l l e c t o r C u r r e n t IC ( m A )

Cob - VCB
Collector Output Capacitance Cob (pF)

Collector Base Voltage VCB (V)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002