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Thermal Characteristics
Symbol Parameter TYP MAX Units
RθJC Thermal Resistance, Junction-to-Case - 0.45 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.24 - °C/W
RθJA Thermal Resistance, Junction-to-Ambient - 40 °C/W
SLW9N90C
Electrical Characteristics TC = 25°C unless otherwise noted
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.99 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 900 V, VGS = 0 V -- -- 10 µA
Zero Gate Voltage Drain Current
VDS = 720 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 4.5A -- 1.05 1.40 Ω
On-Resistance
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 2200 -- pF
Coss Output Capacitance f = 1.0 MHz -- 180 -- pF
Crss Reverse Transfer Capacitance -- 15 -- pF
Switching Characteristics
td(on) Turn-On Delay Time -- 50 -- ns
VDD = 450 V, ID = 9.0A,
tr Turn-On Rise Time -- 120 -- ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 100 -- ns
(Note 4, 5)
tf Turn-Off Fall Time -- 80 -- ns
Qg Total Gate Charge VDS = 720 V, ID = 9.0A, -- 45 - nC
Qgs Gate-Source Charge VGS = 10 V -- 14 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 18 -- nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.0mH, IAS = 9.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typical Characteristics
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
VGS
SameType
50KΩ
asDUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
Charge
R
L V
DS
V
DS 9
0%
V V
DD
GS
R
G
1
0%
V
GS
1
0V D
UT
td tr td
(on
) (off) tf
to
n
to
ff
L B V
1 DS S
V E
AS=---- LIAS2 --------------------
DS 2 B V DS S-V DD
B
VD SS
ID
IAS
R
G
V
DD ID(t)
1
0V D
UT V
DD V
DS(t)
tp
tp Tim
e
Peak Diode Recovery dv/dt Test Circuit & Waveforms
D U T +
V D S
I S D
L
D r iv e r
R G
S a m e Ty p e
as DU T V D D
V G S • d v / d t c o n t r o l l e d b y RG
• I S D c o n t r o lle d b y p u ls e p e r io d
G a te P u ls e W id th
V GS D =--------------------------
G a t e P uls e P er io d 10V
( D r iv e r )
IF M , B o d y D io d e F o r w a r d C u r r e n t
I S D
( D U T ) d i/d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T ) B o d y D io d e R e c o v e r y d v / d t
V S D
V D D
B o d y D io d e
F o r w a r d V o lt a g e D r o p
Package Dimensions
TO-3P