Beruflich Dokumente
Kultur Dokumente
December 2009
KSC5402D/KSC5402DT
NPN Silicon Transistor, Planar Silicon Transistor
Features D-PAK
• High Voltage High Speed Power Switch Application Equivalent Circuit
3.0
IB = 1A VCE = 1V
900mA
2.5
800mA
IC[A], COLLECTOR CURRENT
1.5 200mA
100mA 10
1.0
0.5
IB = 0
0.0 1
0 1 2 3 4 5 6 1E-3 0.01 0.1 1
VCE = 6V IC = 5 IB
100 TJ=125℃
10
hFE, DC CURRENT GAIN
TJ=25℃
1
10
TJ=125℃
TJ=25℃
0.1
1
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
10
IC = 5 IB
IC = 10 IB
10
1
TJ=25℃
1
TJ=125℃
TJ=125℃
TJ=25℃
0.1
0.1
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
10 1000
IC = 10 IB f=1MHz
Cib
CAPACITANCE [pF]
1 100
TJ=25℃
TJ=125℃
Cob
0.1 10
1E-3 0.01 0.1 1 1 10 100
2.0 550
tfr [ns], FORWARD RECOVERY TIME
TJ=25℃
COLLECTOR VOLTAGE [V]
1.5
2.0A
1.0
1.5A 500
1.0A
0.4A
IC=0.2A
0.5
450
0.0 0.0 0.5 1.0
1E-3 0.01 0.1 1
Figure 9. Typical Collector Saturation Region Figure 10. Forward Recovery Time
10 IC=5IB1=2IB2
VCC=300V
PW=40μs
300
VFD [V], VOLTAGE
1 200
TJ=25℃
TJ=125℃ TJ=125℃
100 TJ=25℃
0.1
0.01 0.1 1 0.4 0.6 0.8 1.0 1.2 1.4
Figure 11. Diode Forward Voltage Figure 12. Resistive Switching Time, ton
850
IC=5IB1=2IB2 IC=10IB1=2IB2
VCC=300V VCC=15V
PW=40μs VZ=300V
2.0 800
LC=200μH
750
700
1.5 TJ=125℃
650
TJ=125℃
TJ=25℃
600
TJ=25℃
1.0
550
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tsi
100 130
120
90 IC=10IB1=2IB2 IC=10IB1=2IB2
VCC=15V VCC=15V
VZ=300V VZ=300V
110
LC=200μH LC=200μH
80
tC [ns], TIME
tfi [ns], TIME
100 TJ=125℃
TJ=25℃ TJ=25℃
70
90
TJ=125℃
60 80
70
50
60
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Figure 15. Inductive Switching Time, tfi Figure 16. Inductive Switching Time, tc
450
IC=5IB1=5IB2
VCC=15V
400 V =300V
Z
30 LC=200μH
TJ=125℃ 350
300 TJ=125℃
tfi [ns], TIME
tsi [μs], TIME
25 250
TJ=25℃
200
IC=5IB1=5IB2
VCC=15V 150
VZ=300V TJ=25℃
LC=200μH
20 100
50
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Figure 17. Inductive Switching Time, tsi Figure 18. Inductive Switching Time, tfi
450 1.6
IC=5IB1=5IB2
VCC=15V
400 VZ=300V
LC=200μH 1.4
TJ=125℃
350
200
TJ=25℃
0.8
150
IC=5IB1=2IB2
VCC=15V
100 V =300V
0.6 L Z=200μH
C
50
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Figure 19. Inductive Switching Time, tc Figure 20. Inductive Switching Time, tsi
200
IC=5IB1=2IB2 IC=5IB1=2IB2
160 VCC=15V VCC=15V
VZ=300V 180 VZ=300V
LC=200μH LC=200μH
140
160
140
100 120
TJ=25℃
TJ=125℃ 100
80
80
60
60
40
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4
Figure 21. Inductive Switching Time, tfi Figure 22. Inductive Switching Time, tc
10 40
1μs
10μs
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
50μs 30
5ms 1ms
1 DC
20
0.1
10
0.01 0
10 100 1000 0 25 50 75 100 125 150
Figure 23. Forward Bias Safe Operating Area Figure 24. Power Derating
TO-220
(8.70)
2.80 ±0.10
(1.70)
+0.10
ø3.60 ±0.10 1.30 –0.05
18.95MAX.
(3.70)
15.90 ±0.20
9.20 ±0.20
(1.46)
(3.00)
(45°
)
(1.00)
13.08 ±0.20
10.08 ±0.30
10.00 ±0.20
Dimensions in Millimeters
D-PAK
Dimensions in Millimeters
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to
and (c) whose failure to perform when properly used in accordance cause the failure of the life support device or system, or to affect its
with instructions for use provided in the labeling, can be reasonably safety or effectiveness.
expected to result in a significant injury of the user.
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under Sales Support.
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