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1.In radiative coupling, the emitter radiation field-------------?

A. Decays as 1 / R, where R is the separation distance between the emitter and the receptor (Answer)

B. Decays as R, where R is the separation distance between the emitter and the receptor

C. Decays as 1 / 2 R, where R is the separation distance between the emitter and the receptor

D. Decays as 2R, where R is the separation distance between the emitter and the receptor

2.In BJT, switching losses occurs-----------?

A. Only at turn – on

B. Only at turn – off

C. Both at turn on and off (Answer)

D. None of these

3.In BJT, the forward biased base emitter junction inject holes from base to emitter, the holes-------?

A. Do not contribute to the collector current

B. Result in net current flow component into the base

C. Contribute to the collector current

D. Only (a) and (b) (Answer)

E. Only (b) and (c)

4.In EMC signal, the source delivers maximum power to the input of transmission line when the transmission line input
impedance

A. Is equal to the source resistance (Answer)

B. Greater than the source resistance

C. Smaller than the source resistance

D. None of these

5.As the breakdown voltage reached, the DIAC exhibits?

A. Negative resistance characteristics

B. Goes into avalanche condition

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C. Voltage drop snaps back

D. All of these (Answer)

6,For swept frequency measurements, the input impedance of the mismatched transmission line would vary with
frequency as the electrical length of the transmission line would

A. Decrease with frequency

B. Remains same with change in frequency

C. Increase with frequency (Answer)

D. Either A. or B.

7.DIAC are specifically designed to trigger--------------?

A. TRIAC

B. SCR

C. GTO

D. Only (a) and (b) (Answer)

8.Voltage commutation circuit can be converted into a current commutation by interchanging the positions of------------?

A. Diode and capacitor (Answer)

B. Capacitor and SCR

C. Inductor and capacitor

D. Capacitor and load

9.In a 3 phase bridge rectifier the ripple frequency is -------------?

A. Equal to the input frequency

B. Twice the input frequency

C. Three times the input frequency

D. Six times the input frequency (Answer)

10.In a load commutated DC – DC chopper, the capacitor has a-------------?

A. Symmetric triangular voltage across itself

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B. Symmetric rectangular voltage across itself

C. Symmetric trapezoidal voltage across itself (Answer)

D. Symmetric sinusoidal voltage across itself

11.The sum of all phase current in a star connected primary winding with no neutral connection is equal to-----------?

A. Phase current

B. Three times the phase current

C. Three times the line current

D. Zero at all times (Answer)

12.In current commutated DC-DC choppers, the voltage spike appears across the load when-------------?

A. Voltage across the commutating inductances collapses

B. The capacitance voltage adds to the supply voltage

C. Both A. and B. (Answer)

D. None of these

13.For power output higher than 15 kW, the suitable rectifier is----------------?

A. Single phase

B. 3 phase

C. Poly phase

D. Only (b) and (c) (Answer)

14.In a full wave rectifier, the rectification ratio is approximately equal to------------?

A. 61%

B. 71%

C. 81% (Answer)

D. 91%

15.LISN is a device used to measure conducted emissions. LISN stands for-------------?

A. Line integrated stabilization network

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B. Line impedance stabilization network (Answer)

C. Line integrated stored network

D. Laser integrated stabilization networking

16.In a single phase full wave rectifier, during blocking state the pea inverse voltage of diode is--------------?

A. V m

B. 2 V m (Answer)

C. V m / 2

D. 4 V m

17.A single phase ac – dc converter is also known as------------?

A. rectifier (Answer)

B. inverter

C. chopper

D. regulator

18.The output power of the cascaded amplifier / attenuator system can be determined using-----------?

A. Actual gain of amplifier

B. Actual gain of amplifier and attenuator (Answer)

C. Gain in dB of amplifier and attenuator

D. Actual gain of attenuator

19.If the gate voltage of an SCR is removed, then the---------------?

A. anode current decreases

B. anode current does not decrease at all (Answer)

C. anode current increases

D. cathode current increases

20.Anode of an operational SCR is ---------------?

A. Always positive w.r.t cathode (Answer)

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B. Always negative w.r.t anode

C. Always positive w.r.t anode

D. Always negative w.r.t cathode

21.An SCR is made up of silicon because?

A. silicon has large leakage current than germanium

B. silicon has small leakage current than germanium (Answer)

C. silicon has small leakage voltage than germanium

D. silicon has large leakage voltage than germanium

22.In a silicon controlled rectifier, the load is connected-----------?

A. Across anode

B. In series with anode (Answer)

C. Across cathode

D. In series with cathode

23.AC power in a load can be controlled by using------------?

A. Two SCR’s in parallel opposition (Answer)

B. Two SCR’s in series

C. Three SCR’s in series

D. Four SCR’s in series

24.Number of PN junction in an SCR is------------?

A. Two

B. Three (Answer)

C. Four

D. Five

25.The switching function of semiconductor devices can be characterized with-----------?

A. Duty ratio only

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B. Frequency only

C. Duty ratio and frequency

D. Duty ratio, frequency and time delay (Answer)

26.IGBT stands for-----------?

A. Insulated gate bipolar transistor (Answer)

B. Insulated gate bidirectional transistor

C. Inductive gate bipolar transistor

D. Inductive gate bidirectional transistor

27.Electrical power output in a d.c. generator is equal to------------?

A. Electrical power developed in armature – copper losses

B. Mechanical power input – iron and friction losses

C. Electrical power developed in armature – iron and copper losses

D. Mechanical power input – iron and friction losses – copper losses (Answer)

28.An ideal switch is-----------?

A. Lossless

B. Carry current in any direction when it is on

C. Does not carry any current in any direction when it is off

D. All of these (Answer)

29.In ac – dc conversion, when the switch is closed then the sum of voltages around the loop is------------?

A. Zero

B. Non zero (Answer)

C. Equal to the sum of voltage when switch is open

D. Twice of the voltage when switch is open

30.If a shunt motor is started with its field winding open then?

A. It will rotate at the same speed as that with its field winding closed

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B. It will rotate at less speed as that with its field winding closed

C. It will rotate at dangerously high speed (Answer)

D. None of these

31.A rectifier with an external low pass filter is an example of--------------?

A. Indirect switch matrix circuits

B. Direct switch matrix circuits (Answer)

C. Embedded converters

D. All of these

32.Sofia is the capital of----------?

A. Canberra

B. Austria

C. Bulgaria (Answer)

D. Angola

33.The power demand can be estimated approximately by-----------?

A. Load survey method

B. Mathematical method

C. Statistical method (Answer)

D. Economic parameters

34.4 thyristors rated 200 V in series. The operating voltage of the string is 0.600 V. Derating factor of the string is-----------
----------?

A. 0.75

B. 0.7

C. 0.2

D. 0.25 (Answer)

35.Unipolar modulation is generally used in------------?

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A. AC – AC converters

B. AC – DC converters

C. DC – AC converters

D. DC – DC converters (Answer)

36.Dynamic equalizing circuit is used for----------------?

A. equal division of voltage across each thyristor (Answer)

B. equal division of current through each thyristor in parallel

C. equal division of voltage across each thyristor in parallel

D. equal division of current through each thyristor in series

37.A string of n parallel SCRs is operated at 72 KA, the rating of each SCR is 1 KA. If derating factor of the string is 0.1.
value of n will be-----------?

A. 60

B. 70

C. 80 (Answer)

D. 90

38.60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2
KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is----------------------?

A. 76.3 % (Answer)

B. 91.6 %

C. 83.3 %

D. 90.9 %

39.Maximum di / dt in a SCR is--------?

A. Directly proportional to Vm of supply voltage (Answer)

B. Inversely proportional to Vm of supply voltage

C. Inversely proportional to L in the circuit

D. Both A and C

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40.A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11
KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let
the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be-------------?

A. 5, 7

B. 4, 6

C. 7, 5 (Answer)

D. 6, 4

41.For series connected SCR’s dynamic equalising circuit consists of-----------?

A. R and C in series but with diode across C

B. R and C in series but with diode across R (Answer)

C. Series R and diode with C across R

D. Series R and diode with C across R

42.By which one of the following we can measure the reliability of a string-------------?

A. String efficient

B. Reliability factor

C. Factor of safety

D. Derating factor (Answer)

43.Anode current in an SCR consists of------------?

A. holes only (Answer)

B. electrons only

C. either electron or holes

D. Both electron and holes

44.To meet high current demand we use SCRs in--------------?

A. series connection.

B. parallel connection. (Answer)

C. anti parallel connection.

D. both B and C.

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45.Dynamic equalising circuit is useful------------?

A. To limit di / dt of SCR

B. To limit dV / dt of SCR

C. For voltage equalisation

D. Both B and C (Answer)

46.SCRs are used in series to meet---------------?

A. high current demand

B. low voltage demand

C. low current demand

D. high voltage demand (Answer)

47.Which following is a two terminal three layer device?

A. BJT

B. Power dioed (Answer)

C. MOSFET

D. None of above

48.ON state voltage drop across SCR lie between the range-------------?

A. 0 – 0.5 V.

B. 0.5 – 1 V.

C. 1 – 1.5 V.

D. 1.5 – 2 V.

49.Which of following is not a power transistor?

A. IGBTs

B. COOLMOS

C. TRIAC (Answer)

D. SITS

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50.Which statement is true ?

A. Reverse recovery time ( trr ) > gate recovery time (tgr)

B. Device turn OFF time ( tq ) > reverse recover time (trr)

C. Circuit turn OFF time > device turn OFF time ( tq )

D. All of these (Answer)

51.Which of following is normally ON device?

A. SIT (Answer)

B. BJT

C. TRIAC

D. IGBT

52.Typical range of thyristor turn OFF time is--------------?

A. 3 – 10 µs

B. 3 – 50 µs

C. 3 – 100 µs (Answer)

D. 3 – 500 µs

53.Power transistor are type of-----------?

A. B.JTs

B. MOSFETs

C. IGBTs

D. All of above (Answer)

54.During gate recovery time-------------?

A. charge carriers of J2 junction recombined (Answer)

B. charge carriers of J2 junction is swept out

C. charge carrier of J1 junction removed

D. charge carriers of J3 junction is removed

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55.During reverse recovery time------------------?

A. charge carrier of junction J2 recombined

B. charge carrier of junction J1 is swept out

C. charge carrier of junction J3 is swept out

D. both B and C (Answer)

56.Which of the following is true about SIT?

A. SIT is a high power, high frequency device (Answer)

B. SIT is a high power, low frequency device

C. SIT is a high power, high voltage device

D. SIT is a low power, high frequency device

57.During which time maximum conduction spreading take place in the thyristor during turn ON?

A. Delay time

B. Spread time (Answer)

C. Rise time

D. Same for every case

58.A GTO can be turned on by applying-----------?

A. Positive gate signal (Answer)

B. Positive drain signal

C. Positive source signal

D. None of these

59.SITH is also known as-----------?

A. Filled controlled diode (Answer)

B. Filled controlled rectifier

C. Silicon controlled rectifier

D. None of these

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60.The typical time of rising time lies between--------------?

A. 10 – 20 µs

B. 40 – 60 µs

C. 1 – 4 µs (Answer)

D. 90 – 100 µs

61.The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The
storage charge current QRR is-----------?

A. 130 μs

B. 135 μs (Answer)

C. 140 μs

D. 145 μs

62.Maximum power loss occurs during-----------------?

A. delay time

B. rise time (Answer)

C. spread time

D. all

63.Spread time is defined as the interval during which-------------?

A. anode voltage drops from 10 % of its initial value to zero

B. anode current rises from 90 % to its final value (Answer)

C. both (A) and (B)

D. anode current rises from 10 % to 90 % of its final value

64.The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of
1/10, then SCR will-----------?

A. Turn on (Answer)

B. Not turn on

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C. Turn on if inductance is removed

D. Turn on if pulse frequency us increased to two times

65.A power MOSFET has three terminals called-----------?

A. Collector, emitter and gate

B. Drain, source and gate (Answer)

C. Drain, source and base

D. Collector, emitter and base

66.Rise time is defined by the interval when------------?

A. gate current rises from 90 % to 100 % of it final value

B. anode voltage drops from 90 % to 10 % of its initial value

C. anode current rises 10 % to 90 % of its final value

D. both B and C (Answer)

67.A modern power semiconductor device that combines the characteristic of BJT and MOSFET is-------------?

A. IGBT (Answer)

B. FCT

C. MCT

D. GTO

68.Delay time is defined by the interval when---------------?

A. gate current increases from 90 % to 100 % of its final value

B. anode current reaches 10 % from forward leakage current

C. anode voltage drops from 100 % to 90 % of its actual value

D. all of these (Answer)

69.Which one is most suitable power device for high frequency (>100 KHz) switching application?

A. BJT

B. Power MOSFET (Answer)

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C. Schottky diode

D. Microwave transistor

70.Snubber circuit is used with SCR-----------------?

A. in series

B. in parallel (Answer)

C. either series or parallel

D. anti parallel

71.Why resistor is used in Snubber circuit----------------- ?

A. To minimize the loss

B. To minimize the charging current

C. To minimize the discharging current (Answer)

D. All of these

72.What may happen high dV / dt------------?

A. Unwanted turn ON

B. Breakdown of J2 junction

C. Both A and B (Answer)

D. Anyone of these

73.Thermal voltage VT can be given by------------?

A. Kq/T (Answer)

B. KT/q

C. qT/K

D. (K2/q)(T + 1/T – 1)

74.What happen due to high di / dt------------?

A. Breakdown of junction

B. Local hot spot (Answer)

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C. Insulation failure

D. None of these

75.IGBT combines the advantages of-------------?

A. BJTs and SITs

B. BJTs and MOSFETs (Answer)

C. SITs and MOSFETs

D. None of these

76.Which of the following is used in SCR to protect from high dV / dt------------------?

A. Snubber circuit (Answer)

B. Fuse

C. Equalizing circuit

D. Circuit breaker

77.COOLMOS device can be used in application up to power range of-----------?

A. 1 KVA

B. 2 KVA (Answer)

C. 500 VA

D. 100 KVA

78.What is used to protect a thyristor from high di / dt conditions----------?

A. Fuse.

B. Snubber circuit

C. Inductor (Answer)

D. Voltage clamping device

79.Compared to transistor, --------- have lower on state conduction losses and higher power handling capability?

A. TRIACs

B. Semi conductor diodes

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C. MOSFETs

D. Thyristor (Answer)

80.Materials used in heat sink should have-------------?

A. high thermal conductivity

B. large surface area

C. high melting point

D. All of these (Answer)

81.A thyristor can termed as----------?

A. AC switch

B. DC switch (Answer)

C. Both a and B

D. Square wave switch

82.Which of the following is used in heat sink-------------?

A. Iron

B. Aluminium (Answer)

C. Carbon

D Silver

83.How can we protect SCR from thermal conditions -------------?

A. Use of snubber circuit.

B. Using heat sink. (Answer)

C. Using CB and fuse.

D. Using equalizing circuit

84.Thyristor is nothing but a------------?

A. Controlled transistor

B. Controlled switch (Answer)

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C. Amplifier with higher gain

D. Amplifier with large current gain

85.Gate circuit or triggering circuit of a thyristor is

A. lower power circuit. (Answer)

B. high power circuit.

C. magnetic circuit.

D. may be low power or high power circuit

86.After proper turn on of thyristor------------?

A. gate signal is always present

B. gate signal must be removed (Answer)

C. gate signal should present but can be removed

D. none of the above.

87.SCR will be turned off when anode current is---------------?

A. < latching current but greater than holding current and gate signal is 0.

B. less than holding current.

C. < latching current but greater than holding current and gate signal is present.

D. both (A) and (B). (Answer)

88.he capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the
off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of
dv/dt?

A. 600 V/µs

B. 800 V/µs (Answer)

C. 1200 V/µs

D. 1000 V/µs

89.BCT is used for------------?

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A. High power phase control (Answer)

B. High power current control

C. Low power current control

D. Low power phase control

90.Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then-----------
-----?

A. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3.

B. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. (Answer)

C. Vc1 = Vc2 = Vc3 any value of Ig.

D. Vc1 > Vc2 > Vc3 when Ig1 ≥ Ig2 &Atil

91.hich of following devices has highest di/dt and dv/dt capability?

A. SIT

B. SITH

C. GTO (Answer)

D. SCR

92.Which triggering is the most reliable------------?

A. Forward voltage triggering

B. Gate triggering (Answer)

C. dV / dt triggering

D. Thermal triggering

93.Leakage current flows through the thyristor in---------?

A. forward blocking mode

B. reverse blocking mode

C. both forward and reverse blocking mode (Answer)

D. forward conduction mode

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94.Which of the following is disadvantage of fast recovery diodes?

A. Recovery is only 5 µs

B. Recovery is only 50 µs

C. Doping is carried out (Answer)

D. None of these

95.When a large surge current of very short duration flows through a thyristor then which one of the following device
will operate to protect the thyristor -----------?

A. CB

B. Snubber circuit

C. Voltage clamping device

D. Fast acting current limiting device (FACL fuse) (Answer)

96.A power semiconductor may undergo damage due to------------?

A. High di/dt (Answer)

B. High dv/dt

C. Low di/dt

D. Low dv/dt

97.CB used for over current protection of thyristor operates when the fault current is----------?

A. of long period (Answer)

B. of short duration

C. both (A) and (B)

D. neither (A) nor (B)

98.he anode current is 800 A, then the amount of current required to turn off the GTO is about------------?

A. 20 A

B. 200 A (Answer)

C. 600 A

D. 400 A

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99.What is used to protect the SCR from over current ----------------?

A. CB and fuse. (Answer)

B. Heat sink.

C. Snubber circuit.

D. Voltage clamping device.

100.Under normal operating condition voltage clamping device offers impedance of---------?

A. high value. (Answer)

B. low value.

C. zero value.

D. moderate value.

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