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IGBT(Insulated Gate Bipolar Transistor)
Constructed in the same way
as that of MOSFET with a
major difference in the
substrate
n+ layer substrate at the drain
in power MOSFET is
substituted in the IGBT by a
p+ structure called collector
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IGBT Characteristics
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Transfer Characteristics
Plot of collector current
and gate-emitter voltage
Identical to that of power
MOSFET
When VGE is less than
Vget , IGBT is in the off
state
When the device is off ,
junction J2 blocks forward
voltage and in case reverse
voltage appears across
collector and emitter ,
Junction J1 blocks 7
Static V-I (output)Characteristics
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Switching Characteristics of IGBT
The turn on time – Time between the instants of
forward blocking to forward on state
Ton = tdn + tr
Delay time = time for the collector emitter
voltage to fall from Vce to 0.9 Vce (Vce = initial
collector emitter voltage) = time for the collector
current to rise from its initial leakage current Ice
to 0.1 Ic (Ic is the final value)
Rise time = time during which collector emitter
voltage falls from 0.9 Vce to 0.1 Vce=Time for
the collector to rise from 0.1 Ic to its final value
Ic
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Switching Characteristics of IGBT
After Ton, the collector is Ic and the collector emitter
voltage falls in to small value called conduction drop
(Vces)
Turn off time = tdf + tf1+tf2
Tdf = time during which gate voltage falls from Vce to
threshold voltageVget
As Vce falls to Vget during tdf, the collector Ic falls to
0.9Ic.
At the end of tdf, the collector emitter voltage begins to
rise
Tf1 = time during which collector current falls from
90% to 20% of its initial value= time during which
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collector emitter voltage rises from Vces to 0.1 Vce
Switching Characteristics of IGBT
Tf2 =time during which collector current falls from 20
to 10% of Ic=time during which collector emitter
voltage rises from 0.1 Vce to final value Vce
Applications of IGBT:
Used in medium power applications----ac, dc motor
drives, UPS systems, power supplies and drives for
solenoids , relays and contactors
IGBT –expensive than BJT-but popular due to low
gate drive requirements, lower switching losses and
smaller snubber circuit requirements
IGBT converters -more efficient –less size , cost
IGBT inverter fed IM are widely used-less audio-noise
IGBT are available up to 1200 V ,500 A
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