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AON7418

30V N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology VDS 30V


• Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A
• Low Gate Charge RDS(ON) (at VGS=10V) < 1.7mΩ
• High Current Capability
RDS(ON) (at VGS = 4.5V) < 2.8mΩ
• RoHS and Halogen-Free Compliant

Application 100% UIS Tested


• DC/DC Converters in Computing, Servers, and POL 100% Rg Tested
• Isolated DC/DC Converters in Telecom and Industrial

DFN 3.3x3.3 EP
Top View Bottom View D
Top View

1 8

2 7

3 6

4 5 G

S
Pin 1

Absolute Maximum Ratings TA=25°C unless otherwise noted


Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 50
ID
CurrentG TC=100°C 39 A
C
Pulsed Drain Current IDM 200
Continuous Drain TA=25°C 46
IDSM A
Current TA=70°C 37
C
Avalanche Current IAS 66 A
Avalanche energy L=0.05mH C EAS 109 mJ
VDS Spike 100ns VSPIKE 36 V
TC=25°C 83
PD W
Power Dissipation B TC=100°C 33
TA=25°C 6.2
PDSM W
Power Dissipation A TA=70°C 4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16 20 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 45 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 1.1 1.5 °C/W

Rev 0: Oct 2011 www.aosmd.com Page 1 of 6

This datasheet has been downloaded from http://www.digchip.com at this page


AON7418

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS,ID=250µA 1.2 1.8 2.2 V
VGS=10V, ID=20A 1.4 1.7
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 2.1 2.6
VGS=4.5V, ID=20A 2.2 2.8 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 153 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current G 50 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2994 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 1276 pF
Crss Reverse Transfer Capacitance 196 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.4 0.9 1.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 47.7 65 nC
Qg(4.5V) Total Gate Charge 23 31 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 7.6 nC
Qgd Gate Drain Charge 10 nC
tD(on) Turn-On DelayTime 10.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 7.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 30.8 ns
tf Turn-Off Fall Time 8.8 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 20 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 46 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: Oct 2011 www.aosmd.com Page 2 of 6


AON7418

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
4.5V VDS=5V
80 80

10V
60 60
ID (A)

ID(A)
3.5V
3V
40 40

125°C
20 20
25°C
VGS=2.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

5 2

Normalized On-Resistance
4 1.8
VGS=10V
ID=20A
VGS=4.5V 1.6
Ω)
RDS(ON) (mΩ

3
1.4
2
1.2
VGS=4.5V
1 ID=20A
VGS=10V 1

0 0.8
0 5 10
15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

5 1.0E+02
ID=20A
1.0E+01
4
40
1.0E+00
125°C
Ω)

3 1.0E-01
RDS(ON) (mΩ

IS (A)

125°C
1.0E-02
2 25°C
1.0E-03

1 25°C 1.0E-04

1.0E-05
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 0: Oct 2011 www.aosmd.com Page 3 of 6


AON7418

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 4000

VDS=15V 3500
Ciss
8 ID=20A
3000

Capacitance (pF)
2500
VGS (Volts)

6
2000
4 Coss
1500

1000
2 Crss
500

0 0
0 10 20 30 40 50 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500

100.0 RDS(ON) 10µs 400 TJ(Max)=150°C


10µs
TC=25°C
ID (Amps)

Power (W)

10.0 300
100µs
DC
1ms
1.0 10ms 200

TJ(Max)=150°C
0.1 100
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-Case
Safe Operating Area (Note F) (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse


Thermal Resistance

RθJC=1.5°C/W
1

0.1 PD

Single Pulse
Ton
T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0: Oct 2011 www.aosmd.com Page 4 of 6


AON7418

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
90
80 50
Power Dissipation (W)

Current rating ID(A)


70
40
60
50 30
40
30 20

20
10
10
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
°C)
TCASE (° °C)
TCASE (°
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

TA=25°C

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse


Thermal Resistance

1 RθJA=55°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 0: Oct 2011 www.aosmd.com Page 5 of 6


AON7418

Gate Charge Test Circuit & Waveform


Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms


L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 0: Oct 2011 www.aosmd.com Page 6 of 6

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