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DFN 3.3x3.3 EP
Top View Bottom View D
Top View
1 8
2 7
3 6
4 5 G
S
Pin 1
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16 20 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 45 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 1.1 1.5 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100 100
4.5V VDS=5V
80 80
10V
60 60
ID (A)
ID(A)
3.5V
3V
40 40
125°C
20 20
25°C
VGS=2.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
5 2
Normalized On-Resistance
4 1.8
VGS=10V
ID=20A
VGS=4.5V 1.6
Ω)
RDS(ON) (mΩ
3
1.4
2
1.2
VGS=4.5V
1 ID=20A
VGS=10V 1
0 0.8
0 5 10
15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)
5 1.0E+02
ID=20A
1.0E+01
4
40
1.0E+00
125°C
Ω)
3 1.0E-01
RDS(ON) (mΩ
IS (A)
125°C
1.0E-02
2 25°C
1.0E-03
1 25°C 1.0E-04
1.0E-05
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 4000
VDS=15V 3500
Ciss
8 ID=20A
3000
Capacitance (pF)
2500
VGS (Volts)
6
2000
4 Coss
1500
1000
2 Crss
500
0 0
0 10 20 30 40 50 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000.0 500
Power (W)
10.0 300
100µs
DC
1ms
1.0 10ms 200
TJ(Max)=150°C
0.1 100
TC=25°C
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-Case
Safe Operating Area (Note F) (Note F)
10
D=Ton/T In descending order
Zθ JC Normalized Transient
RθJC=1.5°C/W
1
0.1 PD
Single Pulse
Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100 60
90
80 50
Power Dissipation (W)
20
10
10
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
°C)
TCASE (° °C)
TCASE (°
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)
TA=25°C
10
D=Ton/T In descending order
Zθ JA Normalized Transient
1 RθJA=55°C/W 40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds