UNIVERSIDAD DEL CAUCA

PROGRAMA DE INGENIERÍA ELECTRÓNICA Y TELECOMUNICACIONES

ELECTRÓNICA BÁSICA
2019-I
DOCENTE: MSc. ANDRÉS FERNANDO ORDOÑEZ HURTADO

Semiconductors

1. Pure aluminum has a resistivity of 2.83 Ω·cm. Based on its resistivity, should aluminum be
classified as an insulator, semiconductor, or conductor?
2. The resistivity of silicon dioxide is 1015 Ω·cm. Is this material a conductor, semiconductor, or
insulator?
3. Calculate the intrinsic carrier densities (𝑛𝑖 ) in silicon at (a) 100 K, (b) 300 K, and (c) 500 K.
4. (a) At what temperature will 𝑛𝑖 = 1013 cm−3 in silicon? (b) Repeat the calculation for 𝑛𝑖 =
1015 cm−3.
𝑉
5. Electrons and holes are moving in a uniform, one dimensional electric field 𝐸 = +2500 𝑐𝑚 . The
𝑐𝑚2 𝑐𝑚2
electrons and holes have mobilities of 700 𝑉·𝑠
and 250 𝑉·𝑠
, respectively. What are the
17 −3 3 −3
electron and hole velocities? If 𝑛 = 10 cm and 𝑝 = 10 cm , what are the electron and
hole current densities?
6. At what temperature will intrinsic silicon become an insulator, based on the definitions in Table
𝑐𝑚2 𝑐𝑚2
2.1? Assume that 𝜇𝑛 = 2000 𝑉·𝑠
and 𝜇𝑝 = 750 𝑉·𝑠
.
7. A current density of 10,000 A/cm2 exists in a 0.02 Ω·cm n-type silicon sample. What is the electric
field needed to support this drift current density?
8. Silicon is doped with 5 × 1017 boron atoms/cm3 and 2×1017 phosphorus atoms/cm3 (a) Is this n-
or p-type silicon? (b) What are the hole and electron concentrations at room temperature?
9. A silicon wafer is uniformly doped with 4.5 × 1016 phosphorus atoms/cm3 and 5.5 × 1016 boron
atoms/cm3. Find the electron and hole concentrations, the electron and hole mobilities, and the
resistivity of this silicon material at 300 K. Is this material n- or p-type?
10. Silicon is doped with 3 × 1017 arsenic atoms/cm3. (a) Is this n- or p-type silicon? (b) What are the
hole and electron concentrations at room temperature? (c) What are the hole and electron
concentrations at 250 K?
11. The next figure gives the electron and hole concentrations in a 2 µm wide region of silicon. In
addition, there is a constant electric field of 20 V/cm present in the sample. What is the total
current density at x = 0? What are the individual drift and diffusion components of the hole and
electron current densities at x = 1.0 µm? Assume that the electron and hole mobilities are 350
and 150 cm2/V·s, respectively.
Diodes

1. A diode is doped with 𝑁𝐴 = 1018 𝑐𝑚−3 on the p-type side and 𝑁𝐷 = 1015 𝑐𝑚−3 on the n-type
side. (a) What are the values of 𝑝𝑝 , 𝑝𝑛 , 𝑛𝑝 and 𝑛𝑛 ? (b) What are the depletion-region width (𝑤𝑑 )
and built-in voltage (𝑉0 )?
2. A diode has 𝑤𝑑 = 0.4 𝜇𝑚 and 𝑉0 = 0.85 𝑉. (a) What reverse bias is required to triple the
depletion-layer width? (b) What is the depletion region width if a reverse bias of 7 V is applied
to the diode?
3. To what temperature does ∅𝑡 = 0.025 𝑉 actually correspond? What is the value of ∅𝑡 for
temperatures of −55°C, 0°C, and +85°C?
4. A diode has 𝐼𝑆 = 10−18 𝐴. (a) What is the diode voltage if the diode current is 100 A? (b) What
is the diode voltage if the diode current is 10 A? (c) What is the diode current for 𝑉𝐷 = 0 𝑉? (d)
What is the diode current for 𝑉𝐷 = −0.06 𝑉? (e) What is the diode current for 𝑉𝐷 = −4 𝑉?
5. The half-wave rectifier in Figure P14 is operating at a frequency of 60 Hz, and the rms value of
the transformer output voltage is 6.3 V. (a) What is the value of the dc output voltage 𝑉𝑂 if the
diode voltage drop is 1 V? (b) What is the minimum value of C required to maintain the ripple
voltage to less than 0.25 V if 𝑅 = 0.5 Ω? (c) What is the PIV rating of the diode in this circuit?
(d) What is the surge current when power is first applied? (e) What is the amplitude of the
repetitive current in the diode?

Figure P14

6. The full-wave rectifier in Figure P15 is operating at a frequency of 60 Hz, and the rms value of
the transformer output voltage is 18 V. (a) What is the value of the dc output voltage if the diode
voltage drop is 1 V? (b) What is the minimum value of C required to maintain the ripple voltage
to less than 0.25 V if 𝑅 = 0.5 Ω? (c) What is the PIV rating of the diode in this circuit? (d) What
is the surge current when power is first applied? (e) What is the amplitude of the repetitive
current in the diode?
 Figure P15

7. A full-wave bridge rectifier with a 120-Vrms sinusoidal input has a load resistor of 1 kΩ. (a) If
silicon diodes are employed, what is the dc voltage available at the load (𝑉𝑂 )? (b) Determine the
required PIV rating of each diode. (c) Find the maximum current through each diode during
conduction. (d) What is the required power rating of each diode?

8. Determine 𝑉𝑂 for each network of Figure P17 for the input shown.

Figure P17

9. Sketch 𝑖𝑅 and 𝑉𝑂 for the network of Figure P18 for the input shown.

Figure P18

10. Sketch 𝑉𝑂 for each network of Figure P19 for the input shown.

Figure P19
11. Plot the load line and find the Q-point for the diode circuit in Figure P20 if V = 5 V and R = 10 kΩ.
Use the I-V characteristic in Fig. P3.42. (b) Repeat for V = −6V and R = 3 kΩ. (c) Repeat for V = 3V
and R = 3 kΩ.

Figure P20

12. What is maximum load current IL that can be drawn from the Zener regulator in Figure P21 if it
is to maintain a regulated output? What is the minimum value of RL that can be used and still
have a regulated output voltage?

Figure P21

13. Load resistor RL in Figure P22 is 100 Ω. What are the nominal and worst-case values of Zener
diode current and power dissipation if the power supply voltage, Zener breakdown voltage, and
resistors all have 10 percent tolerances?

Figure P22

14. For the Zener regulated power supply in Figure P23, the rms value of 𝑣𝐼 is 15 V, the operating
frequency is 60 Hz, R = 100 Ω , C = 1000 µF, the on-voltage of diodes D1 and D2 is 0.75 V, and
the Zener voltage of diode D3 is 15 V. (a) What type of rectifier is used in this power supply
circuit? (b) What is the dc voltage at 𝑉1? (c) What is the dc output voltage 𝑉𝑂 ? (d) What is the
magnitude of the ripple voltage at 𝑉1? (e) What is the minimum PIV rating for the rectifier
diodes? (f) Draw a new version of the circuit that will produce an output voltage of −15 V.
Figure P23