MDD7N25 N-channel MOSFET 250V

MDD7N25
N-Channel MOSFET 250V, 6.2A, 0.55Ω

General Description Features

The MDDN25 uses advanced Magnachip’s  VDS = 250V
MOSFET Technology, which provides low on-state  ID = 6.2A
resistance, high switching performance and  RDS(ON) ≤ 0.55Ω @VGS = 10V
excellent quality.

MDD7N25 is suitable device for SMPS, HID and

general purpose applications. Applications
 Power Supply
 PFC
 LED TV

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 250 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 6.2 A
Continuous Drain Current o
ID
TC=100 C 3.9 A
Pulsed Drain Current(1) IDM 25 A
o
TC=25 C 56 W
Power Dissipation o
PD
Derate above 25 C 0.02 W/ oC
Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns
Repetitive Pulse Avalanche Energy(4) EAR 0.4 mJ
(1)
Avalanche current IAR 5.6 A
(4)
Single Pulse Avalanche Energy EAS 115 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 110 o
C/W
Thermal Resistance, Junction-to-Case(1) RθJC 2.2

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 MDD7N25 N-channel MOSFET 250V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDD7N25RH -55~150 C D-pak Reel and Tape Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 250 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 250V, VGS = 0V - - 1 μA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 3.1A - 0.43 0.55 Ω
Forward Transconductance gfs VDS = 30V, ID = 3.1A - 3.0 - S
Dynamic Characteristics
Total Gate Charge Qg - 10.4 -
Gate-Source Charge Qgs VDS = 200V, ID = 7A, VGS = 10V - 2.5 - nC
Gate-Drain Charge Qgd - 4.7 -
Input Capacitance Ciss - 370 -
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 7.5 - pF
Output Capacitance Coss - 77.5 -
Turn-On Delay Time td(on) - 12 -
Rise Time tr VGS = 10V, VDS = 125V, ID = 7A, - 43 -
ns
Turn-Off Delay Time td(off) RG = 25Ω - 21 -
Fall Time tf - 34 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
IS - - 6.2 A
Diode Forward Current
Source-Drain Diode Forward Voltage VSD IS = 6.2A, VGS = 0V - - 1.4 V
(3)
Body Diode Reverse Recovery Time trr IF = 6.2A, dl/dt = 100A/μs - 140 - ns
Body Diode Reverse Recovery Charge Qrr - 0.63 - μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T J(MAX)=150°C.
3. ISD ≤6.2A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=4.8mH, IAS=6.2A, VDD=50V, Rg =25Ω, Starting TJ=25°C

Nov. 2011 Version 1.0 2 MagnaChip Semiconductor Ltd.

 MDD7N25 N-channel MOSFET 250V
1.5
18
Vgs=5.0V
=5.5V
15 =6.0V
=6.5V
=7.0V
ID,Drain Current [A]

12 =8.0V
1.0

RDS(ON) [Ω ]
=8.5V
=9.0V Notes
9 =9.5V 1. 250㎲ Pulse Test VGS=10V
=10V 2. TC=25
℃

=15V
6 =20V 0.5 VGS=20V

0
0.0
0 5 10 15 4 8 12 16

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

※ Notes : ※ Notes :
1. VGS = 10 V
Drain-Source Breakdown Voltage

1. VGS = 0 V
2.5 2. ID = 3.1A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-50 0 50 100 150 -50 0 50 100 150
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

* Notes ; 10
10 1. Vds=30V
Reverse Drain Current [A]
ID(A)

IDR

1
1
150
℃

25℃

150 ℃
※ Notes :
25 -55
℃

℃
1. VGS = 0 V
2. 250㎲ Pulse Test

0.1 0.1
3 4 5 6 7 8 9 10 11 0.2 0.4 0.6 0.8 1.0

VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

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 MDD7N25 N-channel MOSFET 250V
800
Ciss = Cgs + Cgd (Cds = shorted)
10 ※ Note : ID = 7A Coss Coss = Cds + Cgd
50V 700 Crss = Cgd
125V
VGS, Gate-Source Voltage [V]

8 200V 600
Ciss

Capacitance [pF]
500
6
400

4 300 ※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
200 Crss
2
100

0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Operation in This Area

is Limited by R DS(on)
10 s

10
1 100 s
D=0.5
0
1 ms 10
ID, Drain Current [A]

Thermal Response

10 ms 0.2
DC 100 ms
0
10 0.1
Zθ JC(t),

0.05
-1
10 0.02

-1 0.01 ※ Notes :
10
Duty Factor, D=t1/t2
Single Pulse PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
TJ=Max rated RΘ JC=2.2 /W ℃

TC=25 ℃

single pulse
-2 -2
10 10
-1 0 1 2 -5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] t1, Rectangular Pulse Duration [sec]

Fig.9 Maximum Safe Operating Area Fig.10 Transient Thermal Response Curve

10
3000

single Pulse
2500 RthJC = 2.2 /W ℃

8
TC = 25 ℃
ID, Drain Current [A]

2000
6
Power (W)

1500

4
1000

2
500

0 0
1E-4 1E-3 0.01 0.1 1 10 25 50 75 100 125 150

Pulse Width (s) TC, Case Temperature [ ℃ ]

Fig.11 Single Pulse Maximum Power Fig.12 Maximum Drain Current vs. Case
Dissipation Temperature

Nov. 2011 Version 1.0 4 MagnaChip Semiconductor Ltd.

 MDD7N25 N-channel MOSFET 250V
Physical Dimension

D-PAK, 3L
Dimensions are in millimeters, unless otherwise specified

Nov. 2011 Version 1.0 5 MagnaChip Semiconductor Ltd.

 MDD7N25 N-channel MOSFET 250V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Nov. 2011 Version 1.0 6 MagnaChip Semiconductor Ltd.