Si4800BDY

Vishay Siliconix

N-Channel Reduced Qg, Fast Switching MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21
Available
0.0185 at VGS = 10 V 9
30 • TrenchFET® Power MOSFET
0.030 at VGS = 4.5 V 7
• High-Efficient PWM Optimized
• 100 % UIS and Rg Tested

SO-8
D
S 1 8 D
S 2 7 D

S 3 6 D
G 4 5 D
G

Top View

S
Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free)
Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 25
TA = 25 °C 9 6.5
Continuous Drain Current (TJ = 150 °C)a, b ID
TA = 70 °C 7.0 5.0
Pulsed Drain Current (10 µs Pulse Width) IDM 40 A
Continuous Source Current (Diode Conduction)a, b IS 2.3
Avalanche Current IAS 15
L = 0.1 mH
Single-Pulse Avalanche Energy EAS 11.25 mJ
TA = 25 °C 2.5 1.3
Maximum Power Dissipationa, b PD W
TA = 70 °C 1.6 0.8
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Limits
Parameter Symbol Typ. Max. Unit
t ≤ 10 s 40 50
Maximum Junction-to-Ambienta RthJA
Steady State 70 95 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 24 30
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.

Document Number: 72124 www.vishay.com

S-83039-Rev. H, 29-Dec-08 1
Si4800BDY
Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.8 1.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 5
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A
VGS = 10 V, ID = 9 A 0.0155 0.0185
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 7 A 0.023 0.030
Forward Transconductancea gfs VDS = 15 V, ID = 9 A 16 S
a VSD IS = 2.3 A, VGS = 0 V 0.75 1.2 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 8.7 13
Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 9 A 1.5 nC
Gate-Drain Charge Qgd 3.5
Gate Resistance Rg 0.5 1.4 2.2 Ω
Turn-On Delay Time td(on) 7 15
Rise Time tr VDD = 15 V, RL = 15 Ω 12 20
Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 32 50 ns
Fall Time tf 14 25
Source-Drain Reverse Recovery Time trr IF = 2.3 A, dI/dt = 100 A/µs 30 60
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 72124

2 S-83039-Rev. H, 29-Dec-08
 Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40 40
VGS = 10 thru 5 V 4V
TC = - 55 °C
35 35
25 °C
30 30

I D - Drain Current (A)

I D - Drain Current (A)

25 25
125 °C
20 20
3V
15 15

10 10

5 5

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.040 1200

1000
0.032
R DS(on) - On-Resistance (Ω)

C - Capacitance (pF)

Ciss
VGS = 4.5 V 800
0.024
600
VGS = 10 V
0.016
400
Coss
0.008 200
Crss

0.000 0
0 5 10 15 20 25 30 0 4 8 12 16 20

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

6 1.8

VDS = 15 V VGS = 10 V
ID = 9 A
V GS - Gate-to-Source Voltage (V)

ID = 9 A 1.6
5
RDS(on) - On-Resistance

4 1.4
(Normalized)

3 1.2

2 1.0

1 0.8

0 0.6
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

Document Number: 72124 www.vishay.com

S-83039-Rev. H, 29-Dec-08 3
Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.06
50

0.05

r DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 150 °C 0.04

10 ID = 9 A
0.03

0.02

0.01
TJ = 25 °C
0.00
1
0 2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.4
150

0.2
120
ID = 250 µA
V GS(th) Variance (V)

0.0
90
Power (W)

- 0.2

60
- 0.4

- 0.6 30

- 0.8
0
- 50 - 25 0 25 50 75 100 125 150
10-3 10-2 10-1 1 10
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100
Limited
by R DS(on)*

10
I D - Drain Current (A)

1 ms

1
10 ms

100 ms
1s
0.1
TC = 25 °C 10 s
Single Pulse
DC

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

www.vishay.com Document Number: 72124

4 S-83039-Rev. H, 29-Dec-08
 Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72124.

Document Number: 72124 www.vishay.com

S-83039-Rev. H, 29-Dec-08 5
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
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Vishay
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Revision: 08-Feb-17 1 Document Number: 91000