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December 2008
FDS8878
N-Channel PowerTrench® MOSFET
30V, 10.2A, 14mΩ
Features General Description
rDS(on) = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
rDS(on) = 17mΩ, VGS = 4.5V, ID = 9.3A either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
High performance trench technology for extremely low rDS(on) and fast switching speed.
rDS(on)
RoHS Compliant
Branding Dash
5 4
5 6 3
1 7 2
2
3
4 8 1
SO-8
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case (Note 2) 25 oC/W
o
RθJA Thermal Resistance, Junction to Ambient (Note 2b) 125 C/W
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V
VDS = 24V - - 1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TJ = 150oC - - 250
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V
ID = 10.2A, VGS = 10V - 11.0 14.0
ID = 9.3A, VGS = 4.5V - 13.8 17.0
rDS(on) Drain to Source On Resistance mΩ
ID = 10.2A, VGS = 10V,
- 17.5 22.7
TJ = 150oC
Dynamic Characteristics
CISS Input Capacitance - 897 - pF
VDS = 15V, VGS = 0V,
COSS Output Capacitance - 190 - pF
f = 1MHz
CRSS Reverse Transfer Capacitance - 111 - pF
RG Gate Resistance VGS = 0.5V, f = 1MHz 0.7 2.9 5.0 Ω
Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 17 26 nC
Qg(5) Total Gate Charge at 5V VGS = 0V to 5V VDD = 15V - 9 14 nC
ID = 10.2A
Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 0.9 1.4 nC
Ig = 1.0mA
Qgs Gate to Source Gate Charge - 2.5 - nC
Qgs2 Gate Charge Threshold to Plateau - 1.7 - nC
Qgd Gate to Drain “Miller” Charge - 3.3 - nC
Notes:
1: Starting TJ = 25°C, L = 1mH, IAS = 10.7A, VDD = 30V, VGS = 10V.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 50°C/W when mounted on a 1in2 pad of 2 oz copper.
b) 125°C/W when mounted on a minimum pad.
1.2 12
1.0
POWER DISSIPATION MULTIPLIER
9 VGS = 10V
VGS = 4.5V
0.6 6
0.4
3
0.2
RθJA=50oC/W
0 0
0 25 50 75 100 125 150 25 50 75 100 125 150
TA , AMBIENT TEMPERATURE (oC) TA , AMBIENT TEMPERATURE (oC)
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
NORMALIZED THERMAL
0.2
0.1
IMPEDANCE, ZθJA
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)
1000
VGS = 10V
SINGLE PULSE
P(PK), PEAK TRANSIENT POWER (W)
o
RθJA = 125 C/W
o
100 TA = 25 C
10
1
0.5
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t, PULSE WIDTH (s)
100 80
If R = 0 PULSE DURATION = 80µs
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
DUTY CYCLE = 0.5%MAX
If R ≠ 0
IAS, AVALANCHE CURRENT (A)
10
40
STARTING TJ = 25oC
TJ = 25oC
20
TJ = 150oC
STARTING TJ = 150oC TJ = -55oC
1
0
1 2 3 4 5
0.01 0.1 1 10 100 VGS, GATE TO SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Transfer Characteristics
Figure 5. Unclamped Inductive Switching
Capability
80 50
TA = 25oC PULSE DURATION = 80µs
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
VGS = 10V
DUTY CYCLE = 0.5%MAX 40
rDS(ON), DRAIN TO SOURCE
60
ON RESISTANCE (mW)
ID, DRAIN CURRENT (A)
ID = 10.2A
VGS = 5V
30
40
20
VGS = 3.5V
20 ID = 1A
10
VGS = 3V
0
0
0.0 0.2 0.4 0.6 0.8
2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
1.6 1.2
PULSE DURATION = 80µs VGS = VDS, ID = 250µA
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
1.4
THRESHOLD VOLTAGE
NORMALIZED GATE
ON RESISTANCE
1.0
1.2
1.0
0.8
0.8
Figure 9. Normalized Drain to Source On Figure 10. Normalized Gate Threshold Voltage vs
Resistance vs Junction Temperature Junction Temperature
1.6 2000
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX CISS = CGS + CGD
NORMALIZED DRAIN TO SOURCE
1000
1.4
C, CAPACITANCE (pF)
ON RESISTANCE
1.0
Figure 11. Normalized Drain to Source Figure 12. Capacitance vs Drain to Source
Breakdown Voltage vs Junction Temperature Voltage
10 100
VDD = 15V
VGS , GATE TO SOURCE VOLTAGE (V)
8 100us
ID, DRAIN CURRENT (A)
10
1ms
6
1 10ms
THIS AREA IS
LIMITED BY rDS(on) 100ms
4
SINGLE PULSE 1s
0.1 TJ = MAX RATED
WAVEFORMS IN 10s
2 DESCENDING ORDER: RθJA = 125oC/W
ID = 10.2A
DC
ID = 1A
TA = 25oC
0.01
0 0.01 0.1 1 10 100
0 3 6 9 12 15 18
VDS, DRAIN to SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Figure 14. Forward Bias Safe Operating Area
Gate Currents
VDS BVDSS
tP
VDS
L
IAS
VARY tP TO OBTAIN VDD
+
REQUIRED PEAK IAS RG
VDD
VGS -
DUT
tP
0V IAS 0
0.01Ω
tAV
Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms
VDS
VDD Qg(TOT)
VDS VGS
L
VGS = 10V
Qg(5)
VGS
+ Qgs2
VGS = 5V
VDD
-
DUT VGS = 1V
Ig(REF) 0
Qg(TH)
Qgs Qgd
Ig(REF)
0
Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms
td(ON) td(OFF)
RL tr tf
VDS
90% 90%
+
VGS
VDD
10% 10%
- 0
DUT 90%
RGS
VGS 50% 50%
PULSE WIDTH
VGS 10%
0
Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms
1. Mounting pad area onto which the device is attached and Copper pad area has no perceivable effect on transient
whether there is copper on one side or both sides of the thermal impedance for pulse widths less than 100ms. For
board. pulse widths less than 100ms the transient thermal
impedance is determined by the die and package.
2. The number of copper layers and the thickness of the Therefore, CTHERM1 through CTHERM5 and RTHERM1
board. through RTHERM5 remain constant for each of the thermal
models. A listing of the model component values is available
3. The use of external heat sinks.
in Table 1.
4. The use of thermal vias.
200
5. Air flow and board orientation.
RθJA = 64 + 26/(0.23+Area)
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
RθJA (oC/W)
150
the board and the environment they are in.
Fairchild provides thermal information to assist the design-
er’s preliminary application evaluation. Figure 21 defines the
RθJA for the device as a function of the top copper (compo- 100
nent side) area. This is for a horizontally positioned FR-4
board with 1oz copper after 1000 seconds of steady state
power with no air flow. This graph provides the necessary in- 50
formation for calculation of the steady state junction temper-
0.001 0.01 0.1 1 10
ature or power dissipation. Pulse applications can be AREA, TOP COPPER AREA (in2)
evaluated using the Fairchild device Spice thermal model or Figure 21. Thermal Resistance vs Mounting
manually utilizing the normalized maximum transient Pad Area
150
COPPER BOARD AREA - DESCENDING ORDER
0.04 in2
120 0.28 in2
IMPEDANCE (oC/W)
0.52 in2
ZθJA, THERMAL
0.76 in2
90 1.00 in2
60
30
0
10-1 100 101 102 103
t, RECTANGULAR PULSE DURATION (s)
Figure 22. Thermal Impedance vs Mounting Pad Area
Ca 12 8 7.8e-10
Cb 15 14 7.8e-10 LDRAIN
Cin 6 8 .78e-9 DPLCAP 5 DRAIN
2
Dbody 7 5 DbodyMOD 10
Dbreak 5 11 DbreakMOD RLDRAIN
RSLC1
Dplcap 10 5 DplcapMOD 51 DBREAK
+
RSLC2
Ebreak 11 7 17 18 32.9 5
51 ESLC 11
Eds 14 8 5 8 1 -
Egs 13 8 6 8 1 50 +
-
Esg 6 10 6 8 1 RDRAIN 17 DBODY
6 EBREAK 18
ESG
Evthres 6 21 19 8 1 8
-
+ EVTHRES 16
Evtemp 20 6 18 22 1 + 19 - 21
LGATE EVTEMP MWEAK
8
It 8 17 1 GATE RGATE + 18 - 6
1 22 MMED
9 20
Lgate 1 9 5.29e-9 RLGATE MSTRO
Ldrain 2 5 1.0e-9 LSOURCE
CIN SOURCE
Lsource 3 7 0.18e-9 8 7 3
RSOURCE
RLgate 1 9 52.9 RLSOURCE
RLdrain 2 5 10 S1A S2A
RLsource 3 7 1.8 12 RBREAK
13 14 15
17 18
8 13
Mmed 16 6 8 8 MmedMOD S1B S2B RVTEMP
Mstro 16 6 8 8 MstroMOD 13 CB 19
CA
Mweak 16 21 8 8 MweakMOD + + 14 IT -
6 5 VBAT
Rbreak 17 18 RbreakMOD 1 EGS EDS +
8 8
Rdrain 50 16 RdrainMOD 1.6e-3 - - 8
Rgate 9 20 2.3 22
RSLC1 5 51 RSLCMOD 1e-6 RVTHRES
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 8.9e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}
.MODEL MstroMOD NMOS (VTO=2.36 KP=150 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MmedMOD NMOS (VTO=1.95 KP=5.0 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.3)
.MODEL MweakMOD NMOS (VTO=1.57 KP=0.02 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=23 RS=0.1)
RTHERM1 TH 8 1e-1
7
RTHERM2 8 7 5e-1
RTHERM3 7 6 1
RTHERM4 6 5 5 RTHERM3 CTHERM3
RTHERM5 5 4 8
RTHERM6 4 3 12
RTHERM7 3 2 18 6
RTHERM8 2 TL 25
2
Copper Area = 1.0 in 5
template thermal_model th tl
thermal_c th, tl
{
RTHERM5 CTHERM5
ctherm.ctherm1 th 8 =2.0e-3
ctherm.ctherm2 8 7 =5.0e-3
ctherm.ctherm3 7 6 =1.0e-2 4
ctherm.ctherm4 6 5 =4.0e-2
ctherm.ctherm5 5 4 =9.0e-2
ctherm.ctherm6 4 3 =2e-1 RTHERM6 CTHERM6
ctherm.ctherm7 3 2 1
ctherm.ctherm8 2 tl 3
3
rtherm.rtherm1 th 8 =1e-1
rtherm.rtherm2 8 7 =5e-1
RTHERM7 CTHERM7
rtherm.rtherm3 7 6 =1
rtherm.rtherm4 6 5 =5
rtherm.rtherm5 5 4 =8 2
rtherm.rtherm6 4 3 =12
rtherm.rtherm7 3 2 =18
rtherm.rtherm8 2 tl =25 RTHERM8 CTHERM8
}
tl CASE
COMPONANT 0.04 in2 0.28 in2 0.52 in2 0.76 in2 1.0 in2
RTHERM6 26 20 15 13 12
RTHERM7 39 24 21 19 18
PDP SPM™ ®
FlashWriter® *
FPS™ Power-SPM™ The Power Franchise®
F-PFS™ PowerTrench®
PowerXS™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date.
Preliminary First Production Fairchild Semiconductor reserves the right to make changes at any time without notice to
improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
©2008 Fairchild Semiconductor Corporation 12 www.fairchildsemi.com
FDS8878 Rev. C