PD - 97390

IRLB8721PbF
Applications HEXFET® Power MOSFET
l Optimized for UPS/Inverter Applications
l High Frequency Synchronous Buck
VDSS RDS(on) max Qg (typ.)
Converters for Computer Processor Power :
30V 8.7m @VGS = 10V 7.6nC
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification D
for Telecom and Industrial Use
Benefits S
D
l Very Low RDS(on) at 4.5V VGS G
l Ultra-Low Gate Impedance
TO-220AB
l Fully Characterized Avalanche Voltage IRLB8721PbF
and Current
l Lead-Free
G D S
Gate Drain Source

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 30
V
VGS Gate-to-Source Voltage ± 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 62
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 44 A
IDM Pulsed Drain Current c 250
PD @TC = 25°C Maximum Power Dissipation g 65
PD @TC = 100°C Maximum Power Dissipation g 33
W

Linear Derating Factor 0.43 W/°C

TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
°C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw x
10lb in (1.1N m) x
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case g ––– 2.3
RθCS Case-to-Sink, Flat Greased Surface 0.5 ––– °C/W
RθJA Junction-to-Ambient f ––– 62

Notes  through … are on page 9

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 IRLB8721PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250μA
ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 6.5 8.7 mΩ VGS = 10V, ID = 31A e
––– 13.1 16 VGS = 4.5V, ID = 25A e
VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V VDS = VGS, ID = 25μA
ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA VDS = 24V, VGS = 0V
––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 35 ––– ––– S VDS = 15V, ID = 25A
Qg Total Gate Charge ––– 7.6 13
Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.9 ––– VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge ––– 3.4 ––– ID = 25A
Qgodr Gate Charge Overdrive ––– 2.0 ––– See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd) ––– 4.6 –––
Qoss Output Charge ––– 7.9 ––– nC VDS = 15V, VGS = 0V
RG Gate Resistance ––– 2.3 3.8 Ω
td(on) Turn-On Delay Time ––– 9.1 ––– VDD = 15V, VGS = 4.5V e
tr Rise Time ––– 93 ––– ID = 25A
td(off) Turn-Off Delay Time ––– 9.0 ––– ns RG = 1.8Ω
tf Fall Time ––– 17 ––– See Fig. 14
Ciss Input Capacitance ––– 1077 ––– VGS = 0V
Coss Output Capacitance ––– 360 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 98 mJ
IAR Avalanche Current c ––– 25 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 62 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 250 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 25A, VGS = 0V e
trr Reverse Recovery Time ––– 16 24 ns TJ = 25°C, IF = 25A, VDD = 15V
Qrr Reverse Recovery Charge ––– 14 21 nC di/dt = 200A/μs e
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1000 1000
VGS VGS
TOP 10V TOP 10V
9.0V 9.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
4.0V 4.0V
100 3.5V 100 3.5V
BOTTOM 3.0V BOTTOM 3.0V

10 10 3.0V

3.0V
≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH
Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
RDS(on) , Drain-to-Source On Resistance

ID = 25A
VGS = 10V
ID, Drain-to-Source Current (A)

100

1.5
(Normalized)

10
TJ = 175°C
TJ = 25°C
1.0
1

VDS = 15V
≤ 60μs PULSE WIDTH
0.1
0.5
0.0 2.0 4.0 6.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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10000 14
VGS = 0V, f = 1 MHZ ID= 25A
Ciss = Cgs + Cgd, Cds SHORTED

VGS, Gate-to-Source Voltage (V)

12 VDS= 24V
Crss = Cgd
Coss = Cds + Cgd VDS= 15V
10
C, Capacitance (pF)

1000 Ciss

Coss 8

6
Crss
100
4

0
10
0 4 8 12 16 20 24 28
1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)

100 100μsec
100
TJ = 175°C
1msec
10msec
10 10
TJ = 25°C

1 1
TC= 25°C
TJ = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRLB8721PbF

80 2.5
ID = 1.0mA

VGS(th) Gate threshold Voltage (V)

ID = 250μA
60 2.0 ID = 25μA
ID , Drain Current (A)

40 1.5

20 1.0

0 0.5
25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175

TC , CaseTemperature (°C) TJ , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Case Temperature

10
Thermal Response ( ZthJC )

1 D = 0.50

0.20
0.10
R1
R1
R2
R2
R3
R3
R4 Ri (°C/W) τι (sec)
R4
0.1 0.05 τJ 0.003454 13.68748
τC
0.02 τJ τ
τ1 τ2 τ3 τ4 0.17246 7.21E-05
τ1 τ2 τ3 τ4
0.01 0.786312 0.001227
Ci= τi/Ri 1.368218 0.007178
0.01 Ci i/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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32 400
RDS(on), Drain-to -Source On Resistance (mΩ)

EAS, Single Pulse Avalanche Energy (mJ)

I D
ID = 31A
28 TOP 5.4A
10A
300 BOTTOM 25A
24

20
200
16
TJ = 125°C
12 100

8
TJ = 25°C
4 0

2 4 6 8 10 25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
VGS
tp 0.01Ω
I AS

Fig 13b. Unclamped Inductive Test Circuit Fig 13c. Unclamped Inductive Waveforms

RD
VDS VDS
90%
VGS
D.U.T.
RG
+
-V DD
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 % td(on) tr t d(off) tf

Fig 14a. Switching Time Test Circuit Fig 14b. Switching Time Waveforms

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 IRLB8721PbF

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

Current Regulator
Same Type as D.U.T.
Id
Vds

50KΩ
Vgs
12V .2μF
.3μF

+
V
D.U.T. - DS
Vgs(th)
VGS

3mA

IG ID Qgodr Qgd Qgs2 Qgs1

Current Sampling Resistors

Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform

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 IRLB8721PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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 IRLB8721PbF

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF 1010

LOT CODE 1789 INTERNATIONAL PART NUMBER
AS SEMBLED ON WW 19, 2000 RECTIFIER
IN T HE ASS EMBLY LINE "C" LOGO
DAT E CODE
Note: "P" in as s embly line pos ition YEAR 0 = 2000
AS SEMBLY
indicates "Lead - Free" LOT CODE WEEK 19
LINE C

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Notes:

 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.32mH, RG = 25Ω,
IAS = 25A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
… Rθ is measured at TJ approximately 90°C.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2009
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