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NTE2331

Silicon NPN Transistor


Color TV Horizontal Deflection Output
w/Damper Diode

Applications:
D Color TV Horizontal Deflection Output
D Color Display Horizontal Deflection Output
Features:
D High Speed (tf = 100nsec)
D High Breakdown Voltage (VCBO = 1500V)
D High Reliability
D On–Chip Damper Diode
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICES VCE = 1500V – – 1.0 mA
ICBO VCB = 800V – – 10 µA
Collector Sustain Voltage VCEO(sus) IC = 100mA, IB = 0 800 – – V
Emitter Cutoff Current IEBO VEB = 4V 40 – 130 mA
Saturation Voltage VCE(sat) IC = 5A, IB = 1.0A – – 5 V
Collector to Emitter
Saturation Voltage VBE(sat) IC = 5A, IB = 1.0A – – 1.5 V
Base to Emitter
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
DC Current Gain hFE1 VCE = 5V, IC = 1A 8 – –
hFE2 VCE = 5V, IC = 5A 5 – 10
Diode Forward Voltage VF IEC = 6A – – 2 V
Fall Time tf IC = 4A, IB1 = 0.8A, IB2 = 1.6A – 0.1 0.3 µs

.221 (5.6) .134 (3.4) Dia

.123 (3.1) .630 (16.0)

.315
(8.0)

.866
(22.0)

B C E

.158 (4.0)

.804
(20.4)

.215 (5.45) .040 (1.0)

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