® DMV series

DAMPER + MODULATION DIODE FOR VIDEO

MAIN PRODUCT CHARACTERISTICS DAMPER MODULATION

MODUL DAMPER
1 2 3
IF(AV) 3A&6A 5A&6A
VRRM 600 V 1500 V
trr 50 ns 135 ns
VF (max) 1.5 V 1.35 V

FEATURES AND BENEFITS 3

2
1
FULL KIT IN ONE PACKAGE
Insulated TO-220AB
HIGH BREAKDOWN VOLTAGE CAPABILITY (Bending option F5 available)
VERY FAST RECOVERY DIODE
SPECIFIED TURN ON SWITCHING
CHARACTERISTICS DESCRIPTION
LOW STATIC AND PEAK FORWARD High voltage semiconductor especially designed
VOLTAGE DROP FOR LOW DISSIPATION
for horizontal deflection stage in standard and high
INSULATED VERSION: resolution video display with E/W correction.
Insulated voltage = 2500 VRMS
Capacitance = 7 pF The insulated TO-220AB package includes both
PLANAR TECHNOLOGY ALLOWING HIGH the DAMPER diode and the MODULATION diode.
QUALITY AND BEST ELECTRICAL Assembled on automated line, it offers excellent
CHARACTERISTICS insulating and dissipating characteristics, thanks to
OUTSTANDING PERFORMANCE OF WELL the internal ceramic insulation layer.
PROVEN DTV AS DAMPER AND
TURBOSWITCHTM AS MODULATION

ABSOLUTE RATINGS (limiting values, per diode)

Value
Symbol Parameter Unit
MODUL DAMPER
VRRM Repetitive peak reverse voltage 600 1500 V
IFSM Surge non repetitive forward current tp = 10 ms DMV16 50 50 A
sinusoidal
DMV32 60 75
DMV56 60 80
Tstg Storage temperature range - 40 to + 150 °C
Tj Maximum operating junction temperature 150

TURBOSWITCH is a trademark of STMicroelectronics

August 1999 - Ed: 2A 1/9

DMV series

THERMAL RESISTANCES

Value
Symbol Parameter Unit
DMV16 DMV32 DMV56
Rth(j-c) Damper junction to case 5.3 4.8 3.6 °C/W
Rth(j-c) Modulation junction to case 6.5 5.3 5.3
Rth(c) Coupling 0.2 0.2 0.2
Rth(j-c) Total as per full IF(AV) maximum ratings 6.0 5.1 4.5

STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES

Value
Symbol Parameter Test conditions Tj = 25°C Tj = 125°C Unit
Typ. Max. Typ. Max.
VF * Forward voltage drop IF = 5 A DMV16 1.6 1.0 1.5 V
IF = 6 A DMV32 1.5 1.1 1.35
IF = 6 A DMV56 1.8 1.1 1.5
IR ** Reverse leakage current VR = VRRM DMV16 60 100 500 µA
DMV32 100 100 1000
DMV56 100 100 1000
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%

To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
DMV16: P = 1.14 x IF(AV) + 0.072 x IF2(RMS)
DMV32: P = 1.069 x IF(AV) + 0.047 x IF2(RMS)
DMV56: P = 1.15 x IF(AV) + 0.059 x IF2(RMS)

STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE

Value
Symbol Parameter Test conditions Tj = 25°C Tj = 125°C Unit
Typ. Max. Typ. Max.
VF * Forward voltage drop IF = 3A DMV16 1.4 1 1.3 V
IF = 5A DMV32 1.75 1.2 1.5
IF = 5A DMV56 1.75 1.2 1.5
IR ** Reverse leakage current VR = 480V DMV16 20 150 500 µA
DMV32 100 600 2000
DMV56 100 600 2000
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%

To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
DMV16: P = 1.06 x IF(AV) + 0.08x IF2(RMS)
DMV32: P = 1.15 x IF(AV) + 0.07 x IF2(RMS)
DMV56: P = 1.15 x IF(AV) + 0.07 x IF2(RMS)

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 DMV series

RECOVERY CHARACTERISTICS OF THE DAMPER DIODE

Value
Symbol Parameter Test conditions Unit
Typ. Max.
trr Reverse recovery time IF = 100mA Tj = 25°C DMV16 1500 ns
IR = 100mA
DMV32 850
IRR = 10mA
DMV56 750
trr Reverse recovery time IF = 1A Tj = 25°C DMV16 200 300 ns
dIF/dt = -50A/µs DMV32 130 175
VR = 30V
DMV56 110 135

RECOVERY CHARACTERISTICS OF THE MODULATION DIODE

Value
Symbol Parameter Test conditions Unit
Typ. Max.
trr Reverse recovery time IF = 100mA Tj = 25°C DMV16 210 650 ns
IR = 100mA DMV32 110 350
IRR = 10mA
DMV56 110 350
trr Reverse recovery time IF = 1A Tj = 25°C DMV16 95 ns
dIF/dt = -50A/µs DMV32 50
VR = 30V
DMV56 50

TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE

Value
Symbol Parameter Test conditions Unit
Typ. Max.
tfr Forward recovery time IF = 6A Tj = 100°C DMV16 350 ns
dIF/dt = 80A/µs
DMV32 570
VFR = 3V
DMV56 350
VFP Peak forward voltage IF = 6A Tj = 100°C DMV16 25 34 V
dIF/dt = 80A/µs DMV32 21 28
DMV56 19 26

TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE

Value
Symbol Parameter Test conditions Unit
Typ. Max.
tfr Forward recovery time IF = 3A Tj = 100°C DMV16 500 ns
dIF/dt = 80A/µs
VFR = 3V
IF = 5A DMV32 300
dIF/dt = 80A/µs DMV56 300
VFR = 3V
VFP Peak forward voltage IF = 3A Tj = 100°C DMV16 8 V
dIF/dt = 80A/µs
IF = 5A DMV32 10
dIF/dt = 80A/µs DMV56 10

® 3/9
DMV series

ORDERING INFORMATION

DMVxx / F5
LEAD BENDING (OPTION)

DAMPER AND MODULATION DIODES FOR VIDEO

Fig. 1-1: Power dissipation versus peak forward Fig. 1-2: Power dissipation versus peak forward
current (triangular waveform, δ=0.45) (damper current (triangular waveform, δ=0.45) (modulation
diode.) diode)

PF(av)(W) PF(av)(W)
2.0 2.0
DMV32/DMV56
1.8 DMV16 1.8
1.6 DMV56
1.6
DMV16
1.4 1.4
DMV32
1.2 1.2
1.0 1.0
0.8 0.8
0.6 0.6
0.4 0.4
0.2 0.2
Ip(A) Ip(A)
0.0 0.0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

Fig. 2-1: Average forward current versus ambient Fig. 2-2: Average forward current versus ambient
temperature (damper diode). temperature (modulation diode).

IF(av)(A) IF(av)(A)
7 6
DMV32
DMV32/DMV56
6 5
DMV16 DMV56
5
4
4 DMV16
3
3
Rth(j-a)=Rth(j-c) 2 Rth(j-a)=Rth(j-c)
2 T T

1 1
δ=tp/T tp Tamb(°C) δ=tp/T tp Tamb(°C)
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

4/9 ®
 DMV series

Fig. 3-1: Forward voltage drop versus forward Fig. 3-2: Forward voltage drop versus forward
current (damper diode) DMV16. current (damper diode)DMV32.

IFM(A) IFM(A)
20.0 50.0
Typical
10.0 Tj=125°C
Typical
Tj=125°C
10.0 Maximum
Tj=125°C
Maximum
Maximum Tj=25°C
Tj=125°C

1.0 Maximum
Tj=25°C
1.0

VFM(V) VFM(V)
0.1 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

Fig. 3-3: Forward voltage drop versus forward Fig. 3-4: Forward voltage drop versus forward
current (damper diode)DMV56. current (modulation diode)DMV16.

IFM(A) IFM(A)
50.0 20.0
Typical
Tj=125°C
10.0
Typical
Tj=125°C
10.0
Maximum
Tj=125°C Maximum
Tj=125°C
Maximum
Tj=25°C
1.0 Maximum
1.0 Tj=25°C

VFM(V) VFM(V)
0.1 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

Fig. 3-5: Forward voltage drop versus forward Fig. 4: Relative variation of thermal impedance
current (modulation diode)DMV32 and DMV56. junction to case versus pulse duration.

IFM(A) K=[Zth(j-c)/Rth(j-c)]
20.0 1.0
10.0
Typical δ = 0.5
Tj=125°C
0.5
δ = 0.2
Maximum
Tj=125°C
δ = 0.1
1.0 Maximum
Tj=25°C
0.2 Single pulse
T

VFM(V) tp(s) δ=tp/T tp

0.1 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 1E-3 1E-2 1E-1 1E+0

® 5/9
DMV series

Fig. 5-1: Non repetitive surge peak forward current Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (damper diode). versus overload duration (modulation diode).

IM(A) IM(A)
45 40
Tc=100°C Tc=100°C
40 35
35 DMV56 30
30
25 DMV32/DMV56
25 DMV32
20
20
15
DMV16 15 DMV16

10 IM 10 IM

5 t 5 t
δ=0.5 t(s) δ=0.5 t(s)
0 0
1E-3 1E-2 1E-1 1E+0 1E-3 1E-2 1E-1 1E+0

Fig. 6-1: Reverse recovery charges versus dIF/dt Fig. 6-2: Reverse recovery charges versus dIF/dt
(damper diode). (modulation diode).

Qrr(µC) Qrr(nC)
2.4 500
2.2 90%IF=IF(av)
confidence 450
IF=IF(av)
90% confidence
2.0 Tj=125°C
400
Tj=125°C
DMV16
1.8
350 DMV16
1.6
1.4 300
1.2 DMV32 250
1.0 200
0.8 150
0.6 DMV56 100 DMV32/DMV56
0.4
50
0.2 dIF/dt(A/µs)
0.0 0
0.1 0.2 0.5 1.0 2.0 5.0 0.1 1.0 dIF/dt(A/µs) 10.0 50.0

Fig. 7-1: Reverse recovery current versus dIF/dt Fig. 7-2: Reverse recovery current versus dIF/dt
(damper diode). (modulation diode).

IRM(A) IRM(A)
3.0 10
IF=IF(av)
IF=IF(av)
90% confidence
9 90% confidence
Tj=125°C
2.5 Tj=125°C
8
DMV16
7
2.0 DMV16
6
DMV32
1.5 5
DMV56 4
1.0 3
2
0.5
1 DMV32/DMV56
dIF/dt(A/µs)
0.0 0
0.1 0.2 0.5 1.0 2.0 5.0 0.1 1.0 dIF/dt(A/µs) 10.0 100.0

6/9 ®
 DMV series

Fig. 8-1: Transient peak forward voltage versus Fig. 8-2: Transient peak forward voltage versus
dIF/dt (damper diode). dIF/dt (modulation diode).

VFP(V) VFP(V)
50 20
IF=IF(av) IF=IF(av)
45 90% confidence DMV16 18 90% confidence
Tj=125°C Tj=125°C DMV32/DMV56
40 DMV32 16
35 14
DMV56
30 12
DMV16
25 10
20 8
15 6
10 4
5 2
dIF/dt(A/µs) dIF/dt(A/µs)
0 0
0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 200

Fig. 9-1: Forward recovery time versus dIF/dt Fig. 9-2: Forward recovery time versus dIF/dt
(damper diode). (modulation diode).

tfr(ns) tfr(ns)
700 400
IF=IF(av) IF=IF(av)
650 90% confidence 350 90% confidence
Tj=125°C Tj=125°C
600 Vfr=3V Vfr=1.5V
300
550
500 250
DMV16/DMV32/DMV56
450 200
DMV16
400 150
350 DMV32/DMV56
100
300
250 50
dIF/dt(A/µs) dIF/dt(A/µs)
200 0
0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 200

Fig. 10: Dynamic parameters versus junction Fig. 11: Junction capacitance versus reverse
temperature (damper & modulation diodes). voltage applied (typical values).

VFP,IRM,Qrr[Tj] / VFP,IRM,Qrr[Tj=125°C] C(pF)

1.2 100 Tj=25°C
Damper diodes F=1MHz
DMV16
1.0
DMV32
DMV56
0.8
IRM
0.6 10
DMV16
VFP DMV32/DMV56
0.4
Modulation diodes
0.2 Qrr

Tj(°C) VR(V)
0.0 1
0 20 40 60 80 100 120 140 1 10 100 200

® 7/9
DMV series
PACKAGE MECHANICAL DATA
TO-220AB F5 OPTION

DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 15.20 15.90 0.598 0.625
a1 24.16 26.90 0.951 1.059
B C
b2 a3 1.65 2.41 0.064 0.094
B 10.00 10.40 0.393 0.409
L
F
b1 0.61 0.88 0.024 0.034
ØI
b2 1.23 1.32 0.048 0.051
A C 4.40 4.60 0.173 0.181
l4 c1 0.49 0.70 0.019 0.027
a1
c2 2.40 2.72 0.094 0.107
c2
R2 a3 e 2.40 2.70 0.094 0.106
l3
R1 F 6.20 6.60 0.244 0.259
l2 I 3.75 3.85 0.147 0.151
L 2.65 2.95 0.104 0.116
c2 c1 I2 1.14 1.70 0.044 0.066
b1 M1 l3 1.14 1.70 0.044 0.066
e l4 15.80 16.80 0.622 0.661
16.40 typ. 0.645 typ.
M1 2.92 3.30 0.114 0.129
R1 1.40 typ. 0.055 typ.
R2 1.40 typ. 0.055 typ.

PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT cooling method: by conduction (c)

Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.

3.1mm
1mm
2.2mm

2.54mm

8/9 ®
 DMV series
PACKAGE MECHANICAL DATA
TO-220AB

DIMENSIONS
REF. Millimeters Inches
B C
b2
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
L a1 3.75 0.147
F a2 13.00 14.00 0.511 0.551
I
B 10.00 10.40 0.393 0.409
A
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
l4
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
a1 c2
c2 2.40 2.72 0.094 0.107
l3 e 2.40 2.70 0.094 0.106
l2
a2 F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
b1 M
L 2.65 2.95 0.104 0.116
e
c1
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

cooling method: by conduction (c)

Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.

Type Marking Package Weight Base qty Delivery mode

DMV16 DMV16 TO-220AB 2.2 g. 50 Tube
DMV16/F5
DMV32 DMV32 TO-220AB 2.2 g. 50 Tube
DMV32/F5
DMV56 DMV56 TO-220AB 2.2 g. 50 Tube
DMV56/F5
Epoxy meets UL94, V0

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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® 9/9