PD - 97120

IRF8736PbF
HEXFET® Power MOSFET
Applications VDSS RDS(on) max Qg Typ.
l Synchronous MOSFET for Notebook
Processor Power :
30V 4.8m @VGS = 10V 17nC
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems A
A
1 8
S D

Benefits S
2 7
D

l Very Low RDS(on) at 4.5V VGS S

3 6
D
l Low Gate Charge 4 5
G D
l Fully Characterized Avalanche Voltage
and Current Top View SO-8
l 100% Tested for RG
l Lead -Free

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 14.4 A
IDM Pulsed Drain Current c 144
PD @TA = 25°C Power Dissipation f 2.5 W
PD @TA = 70°C Power Dissipation f 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range

Thermal Resistance
Parameter Typ. Max. Units
RθJL g
Junction-to-Drain Lead ––– 20 °C/W
RθJA Junction-to-Ambient fg ––– 50

Notes  through … are on page 9

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IRF8736PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.9 4.8 mΩ VGS = 10V, ID = 18A e
––– 5.5 6.8 VGS = 4.5V, ID = 14.4A e
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 50µA
∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 52 ––– ––– S VDS = 15V, ID = 14.4A
Qg Total Gate Charge ––– 17 26
Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.4 ––– VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge ––– 5.8 ––– ID = 14.4A
Qgodr Gate Charge Overdrive ––– 4.9 ––– See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd) ––– 7.7 –––
Qoss Output Charge ––– 7.1 ––– nC VDS = 10V, VGS = 0V
RG Gate Resistance ––– 1.3 2.2 Ω
td(on) Turn-On Delay Time ––– 12 ––– VDD = 15V, VGS = 4.5V e
tr Rise Time ––– 15 ––– ID = 14.4A
td(off) Turn-Off Delay Time ––– 13 ––– ns RG = 1.8Ω
tf Fall Time ––– 7.5 ––– See Fig. 14
Ciss Input Capacitance ––– 2315 ––– VGS = 0V
Coss Output Capacitance ––– 449 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 219 ––– ƒ = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 126 mJ
IAR Avalanche Current c ––– 14.4 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 3.1 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 144 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 14.4A, VGS = 0V e
trr Reverse Recovery Time ––– 16 24 ns TJ = 25°C, IF = 14.4A, VDD = 10V
Qrr Reverse Recovery Charge ––– 19 29 nC di/dt = 300A/µs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRF8736PbF
1000 1000
VGS VGS
TOP 10V TOP 10V
5.0V 5.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

100 4.5V 4.5V
3.5V 3.5V
3.0V 100 3.0V
2.7V 2.7V
10 2.5V 2.5V
BOTTOM 2.3V BOTTOM 2.3V

1 10

0.1
1 2.3V
0.01 2.3V
≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH
Tj = 25°C Tj = 150°C
0.001 0.1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
ID = 18A
RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current (A)

100

1.5
10
(Normalized)

TJ = 150°C

1
TJ = 25°C 1.0

0.1
VDS = 15V
≤ 60µs PULSE WIDTH
0.01
0.5
1.0 2.0 3.0 4.0 5.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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 IRF8736PbF
10000 5
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
ID= 14.4A

VGS, Gate-to-Source Voltage (V)

Crss = Cgd VDS= 24V
4
Coss = Cds + Cgd VDS= 15V
C, Capacitance (pF)

Ciss
3

1000

2
Coss

Crss 1

0
100
1 10 100
0 4 8 12 16 20
Qg, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)

100 100
100µsec

TJ = 150°C
1msec
10 10

TJ = 25°C 10msec

1 1
TA = 25°C
Tj = 150°C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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20 2.4

2.2

VGS(th) Gate threshold Voltage (V)

16
2.0
ID , Drain Current (A)

ID = 50µA
1.8
12

1.6

8
1.4

1.2
4
1.0

0 0.8
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150

TA, Ambient Temperature (°C) TJ , Temperature ( °C )

Fig 9. Maximum Drain Current Vs. Fig 10. Threshold Voltage Vs. Temperature
Ambient Temperature

100

D = 0.50
Thermal Response ( ZthJA )

10 0.20
0.10
0.05
0.02 R1
R1
R2
R2
R3
R3
R4 Ri (°C/W) τι (sec)
1 R4
0.01
τJ τa 1.396574 0.000246
τJ
τ1 τ2 τ3 τ4 7.206851 0.037927
τ1 τ2 τ3 τ4
27.1278 1.0882
Ci= τi/Ri 14.26877 30.3
0.1 Ci i/Ri

Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + Tc
0.01
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF8736PbF

600

EAS, Single Pulse Avalanche Energy (mJ)

15V
ID
500 TOP 1.28A
1.75A
L DRIVER
VDS BOTTOM 14.4A
400

RG D.U.T +
V
- DD 300
IAS A
20V
tp 0.01Ω
200
Fig 12a. Unclamped Inductive Test Circuit
100

V(BR)DSS
tp 0
25 50 75 100 125 150

Starting T J, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS RD
V DS
Fig 12b. Unclamped Inductive Waveforms
V GS
D.U.T.
RG
+
-V DD

Current Regulator V GS
Same Type as D.U.T.
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

50KΩ

12V .2µF
.3µF Fig 14a. Switching Time Test Circuit
+ VDS
V
D.U.T. - DS
90%

VGS

3mA

10%
IG ID VGS
Current Sampling Resistors
td(on) tr t d(off) tf

Fig 13. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms
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 IRF8736PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

VGS=10V *
ƒ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

Id
Vds

Vgs

Vgs(th)

Qgodr Qgd Qgs2 Qgs1

Fig 16. Gate Charge Waveform

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IRF8736PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)

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SO-8 Part Marking Information
(;$03/(7+,6,6$1,5)026)(7
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package

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 IRF8736PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.21mH, RG = 25Ω, IAS = 14.4A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board
… Rθ is measured at TJ approximately 90°C

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.8/2007
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