SUD25N06-45L

Vishay Siliconix

N-Channel 60-V (D-S), 175C MOSFET, Logic Level


  
VDS (V) rDS(on) (
) ID (A)
0.035 @ VGS = 10 V 25
60
0.045 @ VGS = 4.5 V 22

TO-252

Drain Connected to Tab

G D S

Top View
S
Order Number:
SUD25N06-45L
N-Channel MOSFET

         


Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS
20
TC = 25C 25
Continuous Drain Current (TJ = 175C) ID
TC = 100C 16
Pulsed Drain Current IDM 30 A
Continuous Source Current (Diode Conduction) IS 25
Avalanche Current IAR 25
Repetitive Avalanche Energy (Duty Cycle  1%) L = 0.1 mH EAR 31 mJ
TC = 25C 50
Maximum Power Dissipation PD W
TA = 25C 2.5a
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C

    

Parameter Symbol Limit Unit

Maximum Junction-to-Ambienta RthJA 60

C/W
Maximum Junction-to-Case RthJC 3.0

Notes:
a. Surface mounted on 1” x 1” FR4 Board.

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Document Number: 70274 www.vishay.com
FaxBack 408-970-5600

S-57253—Rev. E, 24-Feb-98 2-1
SUD25N06-45L
Vishay Siliconix


       
 
 



Parameter Symbol Test Condition Min Typa Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60

V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = 60 V, VGS = 0 V 1
Zero
Z Gate
G Voltage
V l Drain
D i Current
C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 mA
A
VDS = 60 V, VGS = 0 V, TJ = 175C 150
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10V 20 A
VGS = 10 V, ID = 12 A 0.025 0.035
VGS = 10 V, ID = 12 A, TJ = 125C 0.045 0.063
D i S
Drain-Source O S
On-State R i
Resistance b rDS(on) W
VGS = 10 V, ID = 12 A, TJ = 175C 0.058 0.081
VGS = 4.5 V, ID = 12 A 0.036 0.045
Forward Transconductanceb gfs VDS = 15 V, ID = 12 A 15 25 S

Dynamic
Input Capacitance Ciss 1320

Output Capacitance Coss VGS = 0 V,

V VDS = 25 V
V, f = 1 MH
MHz 210 pF
F
Reverse Transfer Capacitance Crss 56
Total Gate Chargec Qg 26 40
Gate-Source Chargec Qgs VDS = 30 V
V, VGS = 10 V
V, ID = 25 A 7.5 nC
C
Gate-Drain Chargec Qgd 4.5
Turn-On Delay Timec td(on) 10 20
Rise Timec tr VDD = 30 V
V,, RL = 1 2W
1.2 10 20
ns
Turn-Off Delay Timec td(off) ID ^ 25 A
A, VGEN = 10 VV, RG = 7 5W
7.5 31 45
Fall Timec tf 10 20

Source-Drain Diode Ratings and Characteristics (TC = 25C)a

Pulsed Current ISM 30 A
Diode Forward Voltage VSD IF = 25 A, VGS = 0 V 1.5 V
Reverse Recovery Time trr 60 90 ns
IF = 25 A, di/dt = 100 A/ms
Reverse Recovery Charge Qrr 0.13 mC

Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.

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FaxBack 408-970-5600 Document Number: 70274

2-2 S-57253—Rev. E, 24-Feb-98
 SUD25N06-45L
Vishay Siliconix

 
       

Output Characteristics Transfer Characteristics

30 30

VGS = 5, 6, 7, 8, 9, 10 V
24 24
I D – Drain Current (A)

I D – Drain Current (A)

18 18
4V

12 12

TC = 125C
6 6
1, 2, 3 V 25C
–55C
0 0
0 2 4 6 8 10 0 1 2 3 4 5

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

50 0.100

TC = –55C
40
r DS(on) – On-Resistance ( Ω )

0.075
g fs – Transconductance (S)

25C

30
125C
0.050 VGS = 4.5 V
20
VGS = 10 V

0.025
10

0 0
0 6 12 18 24 30 0 6 12 18 24 30

ID – Drain Current (A) ID – Drain Current (A)

Capacitance Gate Charge

1800 10

1500 VDS = 30 V
V GS – Gate-to-Source Voltage (V)

8 ID = 25 A
Ciss
C – Capacitance (pF)

1200
6

900

4
600

Coss
2
300
Crss

0 0
0 10 20 30 40 50 60 0 6 12 18 24 30

VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)

Document Number: 70274 www.vishay.com
FaxBack 408-970-5600

S-57253—Rev. E, 24-Feb-98 2-3
 SUD25N06-45L
Vishay Siliconix

       

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 12 A
2.0
r DS(on)– On-Resistance ( Ω )

TJ = 150C

I S – Source Current (A)

(Normalized)

1.5
TJ = 25C
10
1.0

0.5

0 1
–50 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)

  


Drain Current vs. Case Temperature Safe Operating Area

30 50

100 µs
Limited
24
by rDS(on)
10
I D – Drain Current (A)

I D – Drain Current (A)

18
1 ms

12
1
10 ms
TC = 25C 100 ms
6 dc, 1 s
Single Pulse

0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100
TC – Case Temperature (C) VDS – Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1 Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1

0.1

0.05
0.02

Single Pulse
0.01
10–4 10–3 10–2 10–1 1 3

Square Wave Pulse Duration (sec)

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FaxBack 408-970-5600 Document Number: 70274

2-4 S-57253—Rev. E, 24-Feb-98
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